Flow path structure, semiconductor production device, and flow path structure production method

Abstract

This flow path structure comprises a substrate and a flow path. The substrate has a first opening in a first surface. The flow path is positioned inside the substrate and is connected to the first opening. The substrate has a plurality of grooves in the first surface. The plurality of grooves include a plurality of first grooves and a plurality of second grooves. The plurality of first grooves extend in a first direction. The plurality of second grooves extend in a second direction intersecting the first direction.

Description

Flow path structure, semiconductor manufacturing apparatus, and method for manufacturing flow path structure

[0001] The disclosed embodiments relate to a flow path structure, a semiconductor manufacturing apparatus, and a method for manufacturing a flow path structure.

[0002] In semiconductor manufacturing processes, a plasma processing apparatus places a wafer, which is an object to be processed, in a chamber and processes it with plasma in a vacuum atmosphere. Prior art has disclosed a technique for reducing contamination of the object by process by-products, such as dust, that accumulate on the inner walls of the chamber and fall onto the object.

[0003] Japanese Patent Application Laid-Open No. 2007-63595

[0004] The flow path structure of the present disclosure includes a base and a flow path. The base has a first opening on a first surface. The flow path is located inside the base and is connected to the first opening. The base has a plurality of grooves on the first surface. The plurality of grooves includes a plurality of first grooves and a plurality of second grooves. The plurality of first grooves extend along a first direction. The plurality of second grooves extend along a second direction intersecting the first direction.

[0005] FIG. 1 is a cross-sectional view showing an example of the configuration of a semiconductor manufacturing apparatus according to an embodiment. FIG. 2 is a perspective view showing an example of the configuration of a flow channel structure according to an embodiment. FIG. 3 is a front view showing an example of the configuration of a flow channel structure according to an embodiment. FIG. 4 is a cross-sectional view taken along the arrows A-A in FIG. 3. FIG. 5 is an enlarged front view showing an example of the configuration of a first surface of a flow channel structure according to an embodiment. FIG. 6 is a cross-sectional view showing an example of the configuration of a groove according to an embodiment. FIG. 7 is a cross-sectional view showing an example of the configuration of a groove according to an embodiment. FIG. 8 is an enlarged front view showing another example of the configuration of a first surface of a flow channel structure according to an embodiment. FIG. 9 is a cross-sectional view showing an example of the configuration of a flow channel structure according to another embodiment 1. FIG. 10 is a front view showing an example of the configuration of a flow channel structure according to another embodiment 2. FIG. 11 is a cross-sectional view taken along the arrows B-B in FIG. 10. FIG. 12 is a flowchart showing an example of a manufacturing process of a flow channel structure according to an embodiment. FIG. 13 is a flowchart showing another example of a manufacturing process of a flow channel structure according to an embodiment.

[0006] Hereinafter, embodiments of a flow channel structure, a semiconductor manufacturing apparatus, and a method for manufacturing a flow channel structure disclosed in the present application will be described with reference to the accompanying drawings. Note that the present disclosure is not limited to the embodiments described below.

[0007] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0008] In semiconductor manufacturing processes, a plasma processing apparatus places a wafer, which is an object to be processed, in a chamber and processes it with plasma in a vacuum atmosphere. Prior art has disclosed a technique for reducing contamination of the object by process by-products, such as dust, that accumulate on the inner walls of the chamber and fall onto the object.

[0009] However, the above-mentioned conventional techniques have room for further improvement in terms of reducing contamination of the workpiece, and therefore, there is a need for a technique that can overcome the above-mentioned problems and reduce contamination of the workpiece by process by-products.

[0010] <Semiconductor Manufacturing Apparatus> First, the configuration of a semiconductor manufacturing apparatus 100 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a cross-sectional view showing an example of the configuration of a semiconductor manufacturing apparatus 100 according to an embodiment.

[0011] The semiconductor manufacturing apparatus 100 according to the embodiment is, for example, a plasma processing apparatus that uses plasma to process a semiconductor wafer W. Examples of such a semiconductor manufacturing apparatus 100 include a CVD (Chemical Vapor Deposition) apparatus and a dry etching apparatus.

[0012] The semiconductor manufacturing apparatus 100 according to the embodiment may include a flow channel structure 1, a chamber 110, a mounting table 120, and a shaft 130. The chamber 110 accommodates the flow channel structure 1, at least a portion of the mounting table 120, and at least a portion of the shaft 130.

[0013] The inside of the chamber 110 can be evacuated or decompressed by an exhaust unit (not shown). An opening 111 for loading and unloading the semiconductor wafer W may be located on the side of the chamber 110.

[0014] 1 , the mounting table 120 is located below the flow path structure 1 in the chamber 110. The mounting table 120 supports the semiconductor wafer W on a surface facing the flow path structure 1, in this case, on the upper surface of the mounting table 120.

[0015] The shaft 130 supports the flow path structure 1 inside the chamber 110 and introduces a medium such as a process gas into the flow path structure 1. A through hole 131 is formed inside the shaft 130, and the through hole 131 is connected to the second opening 3 (see FIG. 2 ) of the flow path structure 1. The mounting table 120 and the shaft 130 may be made of ceramics. For example, aluminum oxide or aluminum nitride may be used as the ceramics.

[0016] In the semiconductor manufacturing apparatus 100, a process gas used in plasma processing is led from the through-hole 131 of the shaft 130 through the flow path 4 (see FIG. 4) of the flow path structure 1 and from the plurality of first openings 5 ​​(see FIG. 3) into the chamber 110. That is, the flow path structure 1 according to the embodiment may function as, for example, a shower plate in the semiconductor manufacturing apparatus 100.

[0017] <Flow Channel Structure> Next, the configuration of the flow channel structure 1 according to the embodiment will be described with reference to Fig. 2 to Fig. 11. Fig. 2 is a perspective view showing an example of the configuration of the flow channel structure 1 according to the embodiment, and Fig. 3 is a front view showing an example of the configuration of the flow channel structure 1 according to the embodiment. Fig. 4 is a cross-sectional view taken along line A-A in Fig. 3.

[0018] 2 to 4, the flow path structure 1 according to the embodiment includes a base 2, and a flow path 4 and a first opening 5 formed in the base 2. The base 2 may also have a second opening 3 connected to the first opening 5 and the flow path 4.

[0019] As shown in Fig. 2, the base 2 is, for example, disk-shaped and has a first surface 2a and a second surface 2b. In Fig. 2, the lower surface is the first surface 2a and the upper surface is the second surface 2b. Note that, although the present disclosure shows an example in which the shape of the base 2 is disk-shaped, the shape of the base 2 is not limited to disk-shaped and may be any shape.

[0020] 4 , the second opening 3 is located on the second surface 2b of the base 2, and the plurality of first openings 5 ​​are located on the first surface 2a of the base 2. The second opening 3 and the plurality of first openings 5 ​​are connected by a flow path 4.

[0021] For example, as shown in Fig. 2, the second opening 3 is located at the center of the second surface 2b of the base 2. Alternatively, the multiple first openings 5 ​​may be located so as to be evenly distributed over the entire first surface 2a of the base 2, as shown in Fig. 3.

[0022] Although the present disclosure has shown an example in which one second opening 3, which is an inlet for a medium such as a process gas, is provided and multiple first openings 5, which are outlets for the medium, are provided, the present disclosure is not limited to such an example. For example, multiple second openings 3 may be provided, or one first opening 5 may be provided.

[0023] 4, the flow path 4 may have, in order from the side connected to the second opening 3, an introduction path 4a, an expansion path 4b, and a plurality of branch paths 4c. The introduction path 4a is, for example, a portion that extends from the second opening 3 perpendicular to the second surface 2b.

[0024] The widened path 4b is, for example, a portion extending parallel to the first surface 2a from the end of the introduction path 4a on the first surface 2a side. The plurality of branch paths 4c are, for example, portions extending from the widened path 4b to each of the plurality of first openings 5. Note that the configuration of the flow path 4 in the present disclosure is not limited to the example in FIG. 4 .

[0025] Fig. 5 is an enlarged front view showing an example of the configuration of the first surface 2a of the flow path structure 1 according to the embodiment. As shown in Fig. 5, the first surface 2a of the base 2 according to the embodiment may have a plurality of grooves 6 in addition to a plurality of first openings 5. The grooves 6 in the embodiment are not processing scratches caused by processing such as grinding or polishing to flatten the first surface 2a.

[0026] In an embodiment, the maximum depth of the grooves 6 may be 5 μm to 200 μm. With such a configuration, it is possible to reduce the falling of process by-products over a long period of time. In an embodiment, the surface roughness Ra of the first surface 2a other than the grooves 6 may be 0.1 μm to 5 μm. With such a configuration, it is possible to reduce the falling of process by-products due to impact, vibration, or the like.

[0027] 5 , at least some of the grooves 6 may be connected to the first opening 5. This can reduce the falling of process by-products around the first opening 5.

[0028] If an attempt is made to increase the surface area of ​​the first surface 2a simply by roughening the first surface 2a by grinding or polishing, many sharp points will be formed on the first surface 2a, which may be broken off by the corrosive reaction gas.

[0029] On the other hand, in the embodiment, the first surface 2a has a large surface area due to the presence of a plurality of grooves 6 which are larger than the polishing scratches.

[0030] That is, in the embodiment, the grooves 6 increase the surface area, which reduces peeling of process by-products deposited on the first surface 2a and improves the reliability of the flow path structure 1.

[0031] 5, the plurality of grooves 6 may include a plurality of first grooves 6a and a plurality of second grooves 6b. The first grooves 6a extend along a first direction D1. The second grooves 6b extend along a second direction D2 that intersects with the first direction D1. The second direction D2 may be, for example, a direction perpendicular to the first direction D1.

[0032] Here, in the embodiment, a first groove 6a and a second groove 6b extending along two different directions are located on the first surface 2a, and the surface area of ​​the first surface 2a is larger than when the grooves 6 are not present, and the adhesion between the first surface 2a and the process by-products is high.

[0033] Furthermore, in the embodiment, the first groove 6a and the second groove 6b extending along two different directions are located on the first surface 2a, and the anisotropy of the contraction and expansion of the substrate 2 and the process by-products deposited on the first surface 2a due to the temperature cycle during processing is reduced compared to the case where the first surface 2a has grooves extending in only one direction.

[0034] This can reduce peeling of process by-products deposited on the first surface 2a due to contraction and expansion of the substrate 2 caused by temperature cycles.

[0035] That is, according to the embodiment, the first groove 6a and the second groove 6b extending in two different directions are located on the first surface 2a, thereby reducing contamination of the workpiece by process by-products.

[0036] A method for manufacturing the flow channel structure 1 according to this embodiment is, for example, as follows. First, a tape made of ceramic and containing a binder is prepared. At this time, the first grooves 6 a and the second grooves 6 b are machined in the portions corresponding to the first surface 2 a using a mold on which protrusions corresponding to the first grooves 6 a and the second grooves 6 b are formed.

[0037] The tapes are then dried and laminated, and are then degreased and fired under conditions appropriate for the tape material to obtain the flow path structure 1. By using such a tape lamination method, it is possible to form the first groove 6a and the second groove 6b on the first surface 2a.

[0038] In the embodiment, the groove 6 may have a substantially elliptical shape when the first surface 2a is viewed from the front.

[0039] Figure 6 is a cross-sectional view showing an example of the configuration of groove 6 according to the embodiment, and is a cross-sectional view taken along a cross section perpendicular to the longitudinal direction of groove 6, i.e., perpendicular to the first direction D1 of first groove 6a (see Figure 5) or the second direction D2 of second groove 6b (see Figure 5).

[0040] 6, in an embodiment, the bottom 6c of the groove 6 may be curved in a cross section perpendicular to the longitudinal direction of the groove 6. By making the bottom 6c of the groove 6 curved in a cross section perpendicular to the longitudinal direction in this way, the surface can be made smooth when viewed microscopically, while the surface area can be increased when viewed macroscopically.

[0041] Therefore, according to the embodiment, peeling of process by-products deposited on the first surface 2 a can be reduced, and the reliability of the flow path structure 1 can be improved.

[0042] 6 , in the embodiment, the edge 6d of the groove 6 may have an R-shape in a cross-sectional view perpendicular to the longitudinal direction of the groove 6. This can reduce unintended reaction of the edge 6d of the groove 6 with a corrosive reactive gas, thereby improving the reliability of the flow path structure 1.

[0043] Figure 7 is a cross-sectional view showing an example of the configuration of groove 6 according to the embodiment, taken along a cross section along the longitudinal direction of groove 6, i.e., a cross-sectional view taken along a first direction D1 of first groove 6a (see Figure 5) or a second direction D2 of second groove 6b (see Figure 5).

[0044] 7, in an embodiment, the bottom 6c of the groove 6 may be curved when viewed in cross section along the longitudinal direction of the groove 6. By making the bottom 6c of the groove 6 curved in cross section along the longitudinal direction in this way, the surface can be made smooth when viewed microscopically, while the surface area can be increased when viewed macroscopically.

[0045] Therefore, according to the embodiment, peeling of process by-products deposited on the first surface 2 a can be reduced, and the reliability of the flow path structure 1 can be improved.

[0046] 7 , in the embodiment, the edge 6d of the groove 6 may have an R-shape in a cross-sectional view along the longitudinal direction of the groove 6. This can reduce unintended reaction of the edge 6d of the groove 6 with a corrosive reactive gas, thereby improving the reliability of the flow path structure 1.

[0047] 5 to 7 show examples in which the grooves 6 have a substantially elliptical shape in a plan view, the present disclosure is not limited to such examples, and for example, the grooves 6 may have a substantially rectangular shape in a plan view as shown in Fig. 8. Fig. 8 is an enlarged front view showing another example of the configuration of the first surface 2a of the flow path structure 1 according to the embodiment.

[0048] Furthermore, the grooves 6 according to the embodiment are not limited to a substantially elliptical or rectangular shape, and may have any shape as long as they extend in the first direction D1 and the second direction D2. Furthermore, the grooves 6 according to the embodiment are not limited to two types of grooves 6 extending in two directions, and may be configured with three or more types of grooves extending in three or more directions.

[0049] The base 2 according to the embodiment may be made of any material, such as resin, metal, ceramic, etc. On the other hand, when the base 2 is made of ceramic, it is superior to resin or metal in terms of mechanical strength, heat resistance, corrosion resistance, etc.

[0050] Here, ceramics include aluminum oxide ceramics, zirconium oxide ceramics, yttrium oxide ceramics, magnesium oxide ceramics, silicon nitride ceramics, aluminum nitride ceramics, silicon carbide ceramics, cordierite ceramics, and mullite ceramics.

[0051] For example, aluminum oxide ceramics are ceramics containing 70 mass % or more of aluminum oxide out of 100 mass % of all components constituting the ceramics. The same applies to other ceramics.

[0052] The material of the target substrate can be confirmed by the following method. First, the target substrate is measured using an X-ray diffractometer (XRD), and the obtained value of 2θ, which is the diffraction angle, is compared with the JCPDS card. Here, an example will be described in which the presence of aluminum oxide in the target substrate is confirmed by XRD.

[0053] Next, quantitative analysis of aluminum (Al) is performed using an ICP emission spectrometer (ICP) or an X-ray fluorescence spectrometer (XRF). Then, aluminum oxide (Al) is determined from the Al content measured by ICP or XRF. ２ O ３ If the content calculated as aluminum oxide ceramics is 70 mass % or more, the target substrate is composed of aluminum oxide ceramics.

[0054] When the flow path structure 1 of the present disclosure includes a plurality of first openings 5 ​​and the base 2 is made of ceramic, it can be suitably used as a shower plate used in a semiconductor manufacturing apparatus 100 (see FIG. 1 ) that requires corrosion resistance. Furthermore, the flow path structure 1 according to the embodiment causes little deterioration in the quality of the inflow gas, and therefore the quality of the processed object is high.

[0055] Fig. 9 is a cross-sectional view showing an example of the configuration of the flow path structure 1 according to Alternative Embodiment 1. As shown in Fig. 9, in the flow path structure 1 of Alternative Embodiment 1, an individual second opening 3 and flow path 4 may be positioned for each first opening 5. In this case, as in the examples of Figs. 3 and 4 described above, by causing a medium such as a process gas to flow into the plurality of second openings 3, the medium can be discharged from the plurality of first openings 5.

[0056] FIG. 10 is a front view showing an example of the configuration of a flow path structure 1 according to another embodiment 2, and FIG. 11 is a cross-sectional view taken along line BB shown in FIG.

[0057] 10 , in another embodiment 2 of the flow path structure 1, the first surface 2a of the substrate 2 may include a first region 2a1 and a second region 2a2. The first region 2a1 is a substantially circular region in which the plurality of first openings 5 ​​and the plurality of grooves 6 (see FIG. 5 ) are located. The second region 2a2 is an annular region surrounding the first region 2a1.

[0058] 11, the height of the second region 2a2 may be different from the height of the first region 2a1. In other words, the second region 2a2 and the first region 2a1 may not be flush with each other. This allows a ring-shaped sealing member, such as a seal ring, to be in good contact with the periphery of the first surface 2a.

[0059] In another embodiment 2, the surface roughness Ra of the second region 2a2 may be smaller than the surface roughness Ra of the first region 2a1, so that when the annular sealing member is brought into contact with the second region 2a2, the sealing member and the second region 2a2 can be brought into contact with each other without any gaps.

[0060] In the example of FIG. 11, the second region 2a2 protrudes relative to the first region 2a1, but the present disclosure is not limited to this example, and the second region 2a2 may be recessed relative to the first region 2a1.

[0061] In the embodiment, the first surface 2 a of the base 2 may have unevenness (not shown) formed by irradiating the first surface 2 a with laser light during manufacturing. The first surface 2 a having such unevenness may have a surface roughness Ra in the range of 0.5 μm to 10 μm, for example.

[0062] This creates an anchor effect between the first surface 2 a and the process by-products, improving adhesion between the first surface 2 a and the process by-products. Therefore, according to the embodiment, peeling of the process by-products can be suppressed, thereby suppressing contamination of the workpiece by the process by-products.

[0063] <Manufacturing Process> Next, details of the manufacturing process of the flow channel structure 1 according to the embodiment will be described with reference to Fig. 12 and Fig. 13. Fig. 12 is a flowchart showing an example of the manufacturing process of the flow channel structure 1 according to the embodiment.

[0064] 12, in the manufacturing process of the flow path structure 1 according to the embodiment, a raw material preparation step (step S101) is first performed. In this step, for example, a ceramic raw material having a purity of 90% or more and an average particle size of about 1 μm is prepared, and predetermined amounts of a sintering aid, a binder, a solvent, a dispersant, etc. are added to the raw material to form a mixed slurry. The slurry is spray-dried and granulated by a spray granulation method (spray drying method) to form a primary raw material. This completes the raw material preparation step.

[0065] In the manufacturing process of the flow channel structure 1 according to the embodiment, a molding step is next performed (step S102). In this step, for example, a primary raw material granulated by spray drying is poured into a rubber mold of a predetermined shape and molded into a disk shape by isostatic pressing (rubber pressing). Thereafter, the disk-shaped molded body is removed from the rubber mold and subjected to cutting processing.

[0066] In this cutting process, for example, a hole corresponding to the introduction passage 4a of the base 2 is formed in a disk-shaped molded body, and holes corresponding to the widening passage 4b ​​and multiple branch passages 4c of the base 2 are formed in another disk-shaped molded body.

[0067] Next, the disk-shaped molded body including the introduction passage 4a formed by cutting and the disk-shaped molded body including the widening passage 4b ​​and the plurality of branch passages 4c are joined together, thereby obtaining a molded body having the introduction passage 4a, the widening passage 4b, and the plurality of branch passages 4c, and the molding process is completed.

[0068] For this bonding, a bonding agent is used, which is made of a slurry prepared by weighing and mixing predetermined amounts of the ceramic raw materials, sintering aid, binder, dispersant, and solvent used in preparing the compact. In this molding process, a plurality of grooves 6 may be formed on the first surface 2 a using a conventionally known method.

[0069] In the manufacturing process of the flow channel structure 1 according to the embodiment, an irradiation step is next performed (step S103). In this step, for example, a laser beam having a peak wavelength of 150 nm to 11,000 nm and a spot diameter of 5 μm to 200 μm is irradiated onto a necessary portion of the first surface 2 a of the molded body in an atmosphere corresponding to the ceramic raw material of the molded body. As a result, irregularities are formed on the first surface 2 a.

[0070] In the manufacturing process of the flow channel structure 1 according to the embodiment, a firing step is next performed (step S104). In this step, for example, the compact is fired in an atmosphere corresponding to the ceramic raw material of the compact at a temperature corresponding to the ceramic raw material of the compact. In this way, the flow channel structure 1 according to the embodiment is obtained.

[0071] 12 described above, by irradiating a molded body made of ceramic raw material with laser light before firing, it is possible to form the desired unevenness on the first surface 2 a even with a relatively low laser output. That is, in the example of FIG. 5, the flow path structure 1 can be easily manufactured.

[0072] 13 is a flowchart showing another example of the manufacturing process of the flow channel structure 1 according to the embodiment. As shown in FIG. 13, in the manufacturing process of the flow channel structure 1 according to the another example, first, a raw material preparation process is performed (step S201), and then a molding process is performed (step S202).

[0073] The processes of steps S201 and S202 are similar to the processes of steps S101 and S102 described above, and therefore detailed description thereof will be omitted.

[0074] In the manufacturing process of the flow path structure 1 according to another example, a firing step is next performed (step S203), in which the compact is fired in an atmosphere corresponding to the ceramic raw material of the compact at a temperature corresponding to the ceramic raw material of the compact.

[0075] In another example of the manufacturing process of the flow path structure 1, an irradiation step is next performed (step S204). In this step, for example, a laser beam having a peak wavelength of 150 nm to 11,000 nm and a spot diameter of 5 μm to 200 μm is irradiated onto a necessary portion of the first surface 2 a of the sintered body in an atmosphere appropriate for the sintered body. As a result, irregularities are formed on the first surface 2 a.

[0076] In the example of FIG. 6, the desired irregularities can be formed with high precision on the first surface 2a by irradiating the fired sintered body with laser light.

[0077] In the manufacturing process of the flow path structure 1 according to another example, a heat treatment step is next performed (step S205), in which the sintered body irradiated with the laser beam is heat-treated at a temperature in the range of 500° C. to 1600° C. in an atmosphere appropriate for the sintered body.

[0078] As a result, the color of the portion discolored by the irradiation of the laser light in the above-described step S204 can be restored to its original color. Therefore, according to another example, when the first surface 2 a of the flow path structure 1 is discolored due to a corrosive atmosphere during processing or the like, the discoloration can be easily recognized visually.

[0079] The flow path structure 1 according to the embodiment includes a base 2 and a flow path 4. The base 2 has a first opening 5 on a first surface 2a. The flow path 4 is located inside the base 2 and is connected to the first opening 5. The base 2 has a plurality of grooves 6 on the first surface 2a. The plurality of grooves 6 includes a plurality of first grooves 6a and a plurality of second grooves 6b. The plurality of first grooves 6a extend along a first direction D1. The plurality of second grooves 6b extend along a second direction D2 intersecting the first direction D1. This makes it possible to reduce contamination of the workpiece by process by-products.

[0080] The manufacturing method of the flow path structure 1 according to the embodiment includes a preparation step (step S102), an irradiation step (step S103), and a firing step (step S104). The preparation step (step S102) involves preparing a molded body made of a ceramic raw material, the molded body having a base 2 with a plurality of first openings 5 ​​on a first surface 2a, and flow paths 4 located inside the base 2 and connected to the plurality of first openings 5. The irradiation step (step S103) involves irradiating the first surface 2a of the molded body with laser light. The firing step (step S104) involves firing the molded body irradiated with the laser light. This reduces contamination of the workpiece by process by-products.

[0081] The manufacturing method of the flow path structure 1 according to the embodiment includes a preparing step (step S202), a firing step (step S203), and an irradiating step (step S204). The preparing step (step S202) prepares a molded body made of a ceramic raw material, the molded body having a base 2 with a plurality of first openings 5 ​​on a first surface 2a, and flow paths 4 located inside the base 2 and connected to the plurality of first openings 5. The firing step (step S203) fires the molded body to form a sintered body. The irradiating step (step S204) irradiates the first surface 2a of the sintered body with laser light. This reduces contamination of the workpiece by process by-products.

[0082] Moreover, the manufacturing method of the flow channel structure 1 according to the embodiment further includes a step (step S205) of heat treating the sintered body irradiated with the laser light in a temperature range of 500° C. to 1600° C. This makes it possible to make the discoloration of the first surface 2 a of the flow channel structure 1, when discolored by a corrosive atmosphere or the like during the process, more easily visible.

[0083] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present disclosure.

[0084] Further advantages and other aspects may readily occur to those skilled in the art. Therefore, the disclosure in its broader aspects is not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

[0085] REFERENCE SIGNS LIST 1 Flow path structure 2 Base 2a First surface 4 Flow path 5 First opening 6 Groove 6a First groove 6b Second groove 6c Bottom 6d Edge 100 Semiconductor manufacturing device 110 Chamber 120 Mounting table D1 First direction D2 Second direction

Claims

1. a base having a first opening on a first surface; a flow path located inside the base and connected to the first opening; Equipped with the substrate has a plurality of grooves on the first surface; The plurality of grooves include A plurality of first grooves extending along a first direction; a plurality of second grooves extending along a second direction intersecting the first direction; Flow path structure.

2. The groove has a substantially elliptical shape when the first surface is viewed from the front. The flow path structure according to claim 1 .

3. The bottom of the groove is curved in a cross-sectional view perpendicular to the longitudinal direction of the groove. The flow path structure according to claim 1 .

4. The bottom of the groove is curved in a cross-sectional view along the longitudinal direction of the groove. The flow path structure according to claim 1 .

5. The maximum depth of the groove is 5 μm to 200 μm. The flow path structure according to claim 1 .

6. The surface roughness Ra of the portion of the first surface other than the grooves is 0.1 μm to 5 μm. The flow path structure according to claim 1 .

7. The first surface is a first region in which the first openings and the grooves are located; a second region surrounding the first region and having a different height from the first region; The flow path structure according to claim 1 .

8. The surface roughness Ra of the second region is smaller than the surface roughness Ra of the first region. The flow path structure according to claim 7 .

9. At least some of the grooves are connected to the first opening. The flow path structure according to claim 1 .

10. A mounting table; A chamber; The flow path structure according to claim 1 or 2, A semiconductor manufacturing apparatus comprising:

11. A step of preparing a molded body including a base made of a ceramic raw material and having a plurality of first openings on a first surface, and a flow path located inside the base and connected to the plurality of first openings; irradiating the first surface of the molded body with laser light; sintering the molded body irradiated with the laser light; A method for manufacturing a flow path structure comprising the steps of:

12. A step of preparing a molded body including a base made of a ceramic raw material and having a plurality of first openings on a first surface, and a flow path located inside the base and connected to the plurality of first openings; sintering the compact to form a sintered body; irradiating the first surface of the sintered body with laser light; A method for manufacturing a flow path structure comprising the steps of:

13. The sintered body irradiated with the laser beam is subjected to a heat treatment at a temperature range of 500° C. to 1600° C. The method for manufacturing a flow path structure according to claim 12 .