Semiconductor device

Abstract

This semiconductor device comprises a first switching element, a second switching element, a wiring substrate, a first mount section, a second mount section, a first snubber element, and a second snubber element. The wiring substrate includes an insulation substrate, main surface wiring, and back surface wiring. The main surface wiring includes a first power wiring section and a second power wiring section. The back surface wiring includes a third power wiring section and a fourth power wiring section. The first snubber element is electrically connected between the first power wiring section and the second power wiring section. The second snubber element is electrically connected between the third power wiring section and the fourth power wiring section.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Conventionally, semiconductor devices including power semiconductor elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have been known. For example, Patent Document 1 discloses a semiconductor device including a plurality of semiconductor elements (IGBTs). In this semiconductor device, the plurality of semiconductor elements form a half-bridge circuit. Such semiconductor devices are mounted on circuit boards of electronic devices and used in power supply circuits (e.g., DC / DC converters and inverters), motor drive circuits, and the like.

[0003] JP 2009-158787 A

[0004] In recent years, as electronic devices have become more sophisticated, semiconductor devices used in such electronic devices are required to have a higher current capacity. In order to achieve a higher current capacity for semiconductor devices, it is important to reduce the parasitic inductance of the semiconductor device.

[0005] An object of the present disclosure is to provide a semiconductor device that is improved over conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can achieve low inductance.

[0006] A semiconductor device according to a first aspect of the present disclosure includes at least one first switching element, each having a first electrode, a second electrode, and a third electrode, and a switching operation controlled in response to a first drive signal input to the third electrode, at least one second switching element, each having a fourth electrode, a fifth electrode, and a sixth electrode, and a switching operation controlled in response to a second drive signal input to the sixth electrode, an insulating substrate having a main surface and a back surface facing opposite each other in a thickness direction, a wiring board having main surface wiring formed on the main surface and back surface wiring formed on the back surface, a first mounting portion on which the at least one first switching element is mounted, a second mounting portion on which the at least one second switching element is mounted, a first snubber element bonded to the main surface wiring, and a second snubber element bonded to the back surface wiring, wherein the first mounting portion and the second mounting portion are each located on a side of the wiring board facing the back surface in the thickness direction. The main surface wiring includes a first power wiring portion electrically connected to the fifth electrode of each of the at least one second switching elements and a second power wiring portion electrically connected to both the second electrode of each of the at least one first switching elements and the fourth electrode of each of the at least one second switching elements. The back surface wiring includes a third power wiring portion electrically connected to the first electrode of each of the at least one first switching elements and a fourth power wiring portion electrically connected to both the second electrode of each of the at least one first switching elements and the fourth electrode of each of the at least one second switching elements. The first snubber element is electrically connected between the first power wiring portion and the second power wiring portion. The second snubber element is electrically connected between the third power wiring portion and the fourth power wiring portion.

[0007] According to the above configuration, it is possible to achieve low inductance in the semiconductor device.

[0008] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. FIG. 2 is a view in which the resin member is omitted from the perspective view of FIG. 1. FIG. 3 is a plan view showing the semiconductor device according to the first embodiment. FIG. 4 is a view in which the resin member is indicated by imaginary lines in the plan view of FIG. 3. FIG. 5 is an enlarged plan view of a main portion of FIG. 4 (near the first switching element). FIG. 6 is an enlarged plan view of a main portion of FIG. 4 (near the second switching element). FIG. 7 is a plan view of a main portion of FIG. 4 (near the second switching element). FIG. 8 is a plan view of a main portion of FIG. 7 (near the second switching element). FIG. 9 is a plan view of a main portion of FIG. 8 (near the first switching element). FIG. 10 is a bottom view showing the semiconductor device according to the first embodiment. FIG. 11 is a cross-sectional view taken along line XI-XI of FIG. 4. FIG. 12 is a cross-sectional view taken along line XII-XII of FIG. 4. FIG. 13 is a cross-sectional view taken along line XIII-XIII of FIG. 4. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 4. FIG. 15 is an enlarged cross-sectional view of a portion (near the first semiconductor element) of FIG. 14 . FIG. 16 is an enlarged cross-sectional view of a portion (near the second semiconductor element) of FIG. 14 . FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 4. FIG. 18 is a diagram showing an example of a circuit configuration of a semiconductor device according to the first embodiment. FIG. 19 is a plan view showing a semiconductor device according to a modified example of the first embodiment, with a resin member indicated by imaginary lines. FIG. 20 is a plan view of a portion of the plan view of FIG. 19 , with a portion omitted. FIG. 21 is a plan view of a portion of the semiconductor device according to a modified example of the first embodiment. FIG. 22 is a plan view of a semiconductor device according to a second embodiment, with a resin member indicated by imaginary lines. FIG. 23 is a plan view of a portion of the plan view of FIG. 22 , with a portion omitted. FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 22. FIG. 25 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to the second embodiment.

[0009] Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, identical or similar elements will be designated by the same reference numerals, and redundant description will be omitted. Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not intended to necessarily assign any order to their objects.

[0010] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on (an) object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on (an) object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on (an) object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on (an) object B" includes "a certain object A is in contact with a certain object B and is located on (an) object B" and "a certain object A is located on (an) object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "when viewed from a certain direction, an object A overlaps an object B" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B."

[0011] 1 to 18 show a semiconductor device A1 according to a first embodiment. The semiconductor device A1 includes a plurality of first switching elements 1, a plurality of second switching elements 2, a first snubber element 31A, a second snubber element 31B, a plurality of first circuit components 32A, a plurality of second circuit components 32B, a support member 4, a wiring substrate 5, a first signal terminal 61, a second signal terminal 62, a third signal terminal 63, a fourth signal terminal 64, a signal terminal 65, a plurality of connecting members 7, and a resin member 8. The connecting members 7 include a plurality of connecting members 71, 72, 731, 732, 741, and 742. In FIG. 4, the resin member 8 is indicated by an imaginary line (double-dashed line).

[0012] For ease of explanation, the following directions will be referred to: a thickness direction z, a first direction y, and a second direction x, which are perpendicular to each other. The thickness direction z corresponds to the thickness direction of the semiconductor device A1 (such as the wiring substrate 5). Furthermore, "plan view" refers to a view in the thickness direction z. One side of the first direction y will be referred to as the y1 side of the first direction y, and the other side of the first direction y will be referred to as the y2 side of the first direction y. Furthermore, one side of the second direction x will be referred to as the x1 side of the second direction x, and the other side of the second direction x will be referred to as the x2 side of the second direction x. Furthermore, one side of the thickness direction z will be referred to as the z1 side of the thickness direction z, and the other side of the thickness direction z will be referred to as the z2 side of the thickness direction z. Furthermore, the z1 side of the thickness direction z will be referred to as the upper side, and the z2 side of the thickness direction z will be referred to as the lower side. Terms such as "upper," "lower," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each component in the thickness direction z, and do not necessarily define the relationship with the direction of gravity.

[0013] The first switching elements 1 and the second switching elements 2 are each, for example, a MOSFET. Instead of a MOSFET, the first switching elements 1 and the second switching elements 2 may each be other switching elements such as a field-effect transistor including a metal-insulator-semiconductor field-effect transistor (MISFET) or a bipolar transistor including an IGBT. The first switching elements 1 and the second switching elements 2 are each made of silicon carbide (SiC). The semiconductor material is not limited to SiC and may be silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), or gallium oxide (GaO).

[0014] 15 , each of the multiple first switching elements 1 has an element main surface 10 a and an element back surface 10 b. The element main surface 10 a and the element back surface 10 b are spaced apart from each other in the thickness direction z. The element main surface 10 a faces upward in the thickness direction z (toward the z1 side in the thickness direction z), and the element back surface 10 b faces downward in the thickness direction z (toward the z2 side in the thickness direction z).

[0015] As shown in FIGS. 5 and 15 , each of the multiple first switching elements 1 has a first electrode 11, a second electrode 12, and a third electrode 13. In an example in which each first switching element 1 is a MOSFET, the first electrode 11 is a drain, the second electrode 12 is a source, and the third electrode 13 is a gate. The second electrode 12 includes a first power pad 121 and two first detection pads 122. The first power pad 121 is used to conduct a main current, which will be described in detail later. Each first detection pad 122 is used to detect a first detection signal corresponding to the conduction state (operating state) of the second electrode 12. The first detection signal is, for example, a voltage signal corresponding to a source current flowing through the second electrode 12. Each first detection pad 122 is a source sense pad. As shown in FIGS. 5 and 15 , in each first switching element 1, the first electrode 11 is disposed on the element rear surface 10 b, and the second electrode 12 (the first power pad 121 and the two first detection pads 122) and the third electrode 13 are disposed on the element principal surface 10 a. As shown in FIG. 5 , the first power pad 121, the two first detection pads 122, and the third electrode 13 are spaced apart from one another on the element principal surface 10 a. The two first detection pads 122 are disposed on either side of the third electrode 13 in the second direction x. Unlike the example shown in FIG. 5 and other examples, the second electrode 12 of each first switching element 1 may be configured as a single pad rather than including the first power pad 121 and the two first detection pads 122.

[0016] When a first drive signal (e.g., gate voltage) is input to the third electrode 13 (gate) of each first switching element 1, the element switches between a conductive state and a cutoff state in response to the first drive signal. This switching between the conductive state and the cutoff state is called a switching operation. In the conductive state, current flows from the first electrode 11 (drain) to the second electrode 12 (source), and in the cutoff state, current does not flow. That is, in each first switching element 1, the first electrode 11 (drain) and the second electrode 12 (source) are turned on and off by the first drive signal (e.g., gate voltage) input to the third electrode 13 (gate). The switching frequency of each first switching element 1 depends on the frequency of the first drive signal. As shown in FIG. 18 , the multiple first switching elements 1 are electrically connected in parallel. That is, the first electrodes 11 are electrically connected to each other, and the second electrodes 12 are electrically connected to each other. As a result, in the semiconductor device A1, a common first drive signal is input to the plurality of first switching elements 1 connected in parallel, causing the plurality of first switching elements 1 to operate in parallel.

[0017] 2, 4, and 7 to 9, the multiple first switching elements 1 are arranged in the second direction x. As shown in Fig. 15, each first switching element 1 is bonded to the support member 4 (a first mounting portion 41 described below) via a conductive bonding material 19. The conductive bonding material 19 is, for example, solder, a metal paste material, or a sintered metal.

[0018] 16 , each of the second switching elements 2 has a main surface 20 a and a back surface 20 b. The main surface 20 a and the back surface 20 b are spaced apart in the thickness direction z. The main surface 20 a faces upward in the thickness direction z (toward the z1 side in the thickness direction z), and the back surface 20 b faces downward in the thickness direction z (toward the z2 side in the thickness direction z).

[0019] As shown in FIGS. 6 and 16 , each of the multiple second switching elements 2 has a fourth electrode 21, a fifth electrode 22, and a sixth electrode 23. In an example in which each second switching element 2 is a MOSFET, the fourth electrode 21 is a drain, the fifth electrode 22 is a source, and the sixth electrode 23 is a gate. In the semiconductor device A1, the fifth electrode 22 includes a second power pad 221 and two second detection pads 222. The second power pad 221 is used to conduct a main current, which will be described in detail later. Each second detection pad 222 is used to detect a second detection signal corresponding to the conduction state (operating state) of the fifth electrode 22. The second detection signal is, for example, a voltage signal corresponding to the source current flowing through the fifth electrode 22. Each second detection pad 222 is a source sense pad. 6 and 16 , in each second switching element 2, the fourth electrode 21 is disposed on the element rear surface 20b, and the fifth electrode 22 (the second power pad 221 and the two second detection pads 222) and the sixth electrode 23 are disposed on the element main surface 20a. As shown in FIG. 6 , the second power pad 221, the two second detection pads 222, and the sixth electrode 23 are spaced apart from one another on the element main surface 20a. The two second detection pads 222 are disposed on either side of the sixth electrode 23 in the second direction x. Unlike the example shown in FIG. 6 , the fifth electrode 22 of each second switching element 2 may be configured as a single pad rather than including the second power pad 221 and the two second detection pads 222.

[0020] When a second drive signal (e.g., gate voltage) is input to the sixth electrode 23 (gate) of each second switching element 2, the element switches between a conductive state and a cutoff state in response to the second drive signal. This switching between the conductive state and the cutoff state is called a switching operation. In the conductive state, current flows from the fourth electrode 21 (drain) to the fifth electrode 22 (source), and in the cutoff state, current does not flow. That is, in each second switching element 2, the on / off state between the fourth electrode 21 (drain) and the fifth electrode 22 (source) is controlled by the second drive signal (e.g., gate voltage) input to the sixth electrode 23 (gate). The switching frequency of each second switching element 2 depends on the frequency of the second drive signal. As shown in FIG. 18 , the second switching elements 2 are electrically connected in parallel. That is, the fourth electrodes 21 are electrically connected to each other, and the fifth electrodes 22 are electrically connected to each other. As a result, in the semiconductor device A1, a common second drive signal is input to the plurality of second switching elements 2 connected in parallel, causing the plurality of second switching elements 2 to operate in parallel.

[0021] 2, 4, and 7 to 9, the plurality of second switching elements 2 are arranged in the second direction x. As shown in Fig. 16, each second switching element 2 is bonded to the support member 4 (a second mounting portion 42 described below) via a conductive bonding material 29. The conductive bonding material 29 is, for example, solder, a metal paste material, or a sintered metal.

[0022] The semiconductor device A1 is configured, for example, as a half-bridge switching circuit. As described above, the multiple first switching elements 1 are connected in parallel to each other to form an upper arm circuit of the semiconductor device A1. As described above, the multiple second switching elements 2 are connected in parallel to each other to form a lower arm circuit of the semiconductor device A1. The second electrode 12 (source) of each first switching element 1 and the second switching element 2 is electrically connected to the fourth electrode 21 (drain), thereby connecting the first switching element 1 and the second switching element 2 in series. This series connection of the first switching element 1 and the second switching element 2 forms a bridge. In the illustrated example, the semiconductor device A1 includes four first switching elements 1 and four second switching elements 2 (see FIG. 4 ). The number of first switching elements 1 and second switching elements 2 is not limited to this configuration and can be changed as appropriate depending on the performance required of the semiconductor device A1.

[0023] 9 and 14 to 16, the support member 4 supports a plurality of first switching elements 1 and a plurality of second switching elements 2. As shown in FIG. 9 and 11 to 16, the support member 4 has a first mounting portion 41, a second mounting portion 42, a first insulating plate 43, and a second insulating plate 44.

[0024] The first mounting portion 41 and the second mounting portion 42 are each made of a conductive material, such as copper or a copper alloy. Alternatively, each of the first mounting portion 41 and the second mounting portion 42 may be a laminate in which copper layers and molybdenum layers are alternately stacked in the thickness direction z. In this case, both surface layers in the thickness direction z of each of the first mounting portion 41 and the second mounting portion 42 are copper layers. As shown in FIG. 9 , each of the first mounting portion 41 and the second mounting portion 42 has a rectangular shape in a plan view.

[0025] As shown in FIGS. 9 , 14 , and 15 , a plurality of first switching elements 1 are mounted on the first mounting portion 41. The first mounting portion 41 supports the plurality of first switching elements 1. The first mounting portion 41 is electrically connected to the first electrodes 11 (drains) of each of the first switching elements 1. The first electrodes 11 of the plurality of first switching elements 1 are electrically connected to each other via the first mounting portion 41. The first mounting portion 41 has, for example, a rectangular parallelepiped shape. The dimension of the first mounting portion 41 in the thickness direction z is greater than the dimension of the insulating substrate 50A in the thickness direction z.

[0026] As shown in FIGS. 9 , 14 , and 15 , the first mounting portion 41 has a mounting surface 41 a. The mounting surface 41 a faces upward in the thickness direction z (toward the z1 side in the thickness direction z). The first switching elements 1 are bonded to the mounting surface 41 a, and the third power wiring portion 513 is also bonded to the mounting surface 41 a. As shown in FIGS. 14 and 15 , the first mounting portion 41 is bonded to the first insulating plate 43 via a bonding material 419. The bonding material 419 may be conductive or insulating.

[0027] As shown in FIGS. 9 , 14 , and 16 , a plurality of second switching elements 2 are mounted on the second mounting portion 42. The second mounting portion 42 supports the plurality of second switching elements 2. The second mounting portion 42 is electrically connected to the fourth electrode 21 (drains) of each of the second switching elements 2. The fourth electrodes 21 of the plurality of second switching elements 2 are electrically connected to each other via the second mounting portion 42. The second mounting portion 42 has, for example, a rectangular parallelepiped shape. The dimension of the second mounting portion 42 in the thickness direction z is greater than the dimension of the insulating substrate 50A in the thickness direction z.

[0028] As shown in FIGS. 9 , 14 , and 16 , the second mounting portion 42 has a mounting surface 42 a. The mounting surface 42 a faces upward in the thickness direction z (toward the z1 side in the thickness direction z). The second switching elements 2 and the fourth power wiring portion 514 are bonded to the mounting surface 42 a. As shown in FIGS. 14 and 16 , the second mounting portion 42 is bonded to the second insulating plate 44 via a bonding material 429. The bonding material 429 may be conductive or insulating.

[0029] The first insulating plate 43 and the second insulating plate 44 are each made of an insulating material, such as Al2O3 (aluminum oxide). As shown in FIG. 9, each of the first insulating plate 43 and the second insulating plate 44 has a rectangular shape in plan view. As shown in FIGS. 9, 14, and 15, the first insulating plate 43 supports the first mounting portion 41. As shown in FIGS. 9, 14, and 16, the second insulating plate 44 supports the second mounting portion 42. A plating layer may be formed on the surface of the first insulating plate 43 to which the first mounting portion 41 is bonded (the surface facing the z1 side in the thickness direction z). Furthermore, a plating layer may be formed on the surface of the second insulating plate 44 to which the second mounting portion 42 is bonded (the surface facing the z1 side in the thickness direction z). These plating layers may be formed of, for example, silver or a silver alloy. In the example shown in Figure 10, the surface of the first insulating plate 43 facing downward in the thickness direction z (towards the z2 side in the thickness direction z) and the surface of the second insulating plate 44 facing downward in the thickness direction z (towards the z2 side in the thickness direction z) are each exposed from the resin member 8 (the resin back surface 82 described below), but may also be covered by the resin member 8.

[0030] As shown in FIGS. 11 to 14 and 17 , the wiring board 5 is disposed above the first mounting portion 41 and the second mounting portion 42 in the thickness direction z (the z1 side in the thickness direction z). In other words, the first mounting portion 41 and the second mounting portion 42 are disposed below the wiring board 5 in the thickness direction z (the z2 side in the thickness direction z). The wiring board 5 is wired with a conduction path for the main current in the semiconductor device A1, as well as with conduction paths for the control signals (such as the first drive signal, second drive signal, first detection signal, and second detection signal) of the multiple first switching elements 1 and the multiple second switching elements 2. The wiring board 5 is, for example, a printed circuit board. Alternatively, a direct bonded copper (DBC) board may be used. The wiring board 5 is bonded to the first mounting portion 41 and the second mounting portion 42, spanning both of them. The wiring board 5 has an insulating substrate 50A, main surface wiring 50B, back surface wiring 50C, and a plurality of metal members 58 and 59 .

[0031] The insulating substrate 50A is made of an insulating material, for example, glass epoxy resin. The insulating substrate 50A may be made of ceramics such as AlN (aluminum nitride), SiN (silicon nitride), or AlO instead of glass epoxy resin.

[0032] 11 to 17, the insulating substrate 50A has a main surface 501 and a back surface 502. The main surface 501 and the back surface 502 are spaced apart in the thickness direction z. The main surface 501 faces upward in the thickness direction z (toward the z1 side in the thickness direction z), and the back surface 502 faces downward in the thickness direction z (toward the z2 side in the thickness direction z).

[0033] As shown in FIGS. 8 and 13 to 16, the insulating substrate 50A includes a plurality of through holes 503, a through hole 504, a plurality of openings 505 and a plurality of openings 506.

[0034] As shown in FIG. 13 , each of the multiple through holes 503 penetrates the insulating substrate 50A in the thickness direction z from the main surface 501 to the back surface 502. As shown in FIGS. 8 and 13 , a metal member 59 is inserted into each through hole 503. As shown in FIGS. 8 and 13 , the inner surface of each through hole 503 is not in contact with the metal member 59. Alternatively, the inner surface of each through hole 503 may be in contact with the metal member 59. In the present disclosure, "inserted" refers to a state in which a certain member (e.g., each metal member 59) is inserted into a certain through hole (e.g., each through hole 503), and it is not limited to whether the certain member is in contact with the inner surface of the certain through hole. An insulating member different from the insulating substrate 50A may be formed in the gap between each metal member 59 and the through hole 503.

[0035] The through hole 504 penetrates the insulating substrate 50A in the thickness direction z from the main surface 501 to the back surface 502. As shown in Fig. 8 , a metal member 58 is inserted into the through hole 504. In the illustrated example, the inner surface of the through hole 504 is in contact with the metal member 58 (see Fig. 8 ), but this is not essential.

[0036] 14 and 15 , each of the plurality of openings 505 penetrates the insulating substrate 50A in the thickness direction z from the main surface 501 to the back surface 502. As shown in Fig. 8 , each of the plurality of openings 505 surrounds a corresponding one of the plurality of first switching elements 1 in a plan view.

[0037] 14 and 16 , each of the plurality of openings 506 penetrates the insulating substrate 50A in the thickness direction z from the main surface 501 to the back surface 502. As shown in Fig. 8 , each of the plurality of openings 506 surrounds a corresponding one of the plurality of second switching elements 2 in plan view.

[0038] The main surface wiring 50B and the back surface wiring 50C, together with portions of the support member 4 (the first mounting portion 41 and the second mounting portion 42), the plurality of metal members 58, 59, and the plurality of connecting members 7, form a conductive path in the semiconductor device A1. The main surface wiring 50B and the back surface wiring 50C are each made of, for example, copper or a copper alloy. The main surface wiring 50B and the back surface wiring 50C are not limited to being made of copper or a copper alloy, and may be made of any material as long as their composition includes a conductive material such as a metal. The thicknesses (dimensions in the thickness direction z) and constituent materials of the main surface wiring 50B and the back surface wiring 50C are changed as appropriate depending on the specifications of the semiconductor device A1 (such as the rated current, allowable current, rated voltage, withstand voltage, internal inductance of the entire device, and device size). The main surface wiring 50B includes a first power wiring section 511, a second power wiring section 512, a first signal wiring section 52, a second signal wiring section 53, a third signal wiring section 54, a fourth signal wiring section 55, and a signal wiring section 56, and the back surface wiring 50C includes a third power wiring section 513 and a fourth power wiring section 514.

[0039] The first power wiring section 511, the second power wiring section 512, the third power wiring section 513, and the fourth power wiring section 514 form a conduction path for a main current in the semiconductor device A1. The first power wiring section 511 and the second power wiring section 512 are spaced apart from each other in the first direction y, and the third power wiring section 513 and the fourth power wiring section 514 are spaced apart from each other in the first direction y. In a plan view, the first power wiring section 511 and the third power wiring section 513 overlap each other, and the second power wiring section 512 and the fourth power wiring section 514 overlap each other in a plan view.

[0040] The first power wiring portion 511 is formed on the main surface 501 of the insulating substrate 50A. As can be seen from Figures 4 and 6, the first power wiring portion 511 is electrically connected to the fifth electrodes 22 (sources) of the second switching elements 2 via a plurality of connection members 72. The first power wiring portion 511 is formed so as to avoid the plurality of first switching elements 1 in a plan view.

[0041] The second power wiring portion 512 is formed on the main surface 501 of the insulating substrate 50A. As shown in FIG. 4 , the second power wiring portion 512 is located on the y2 side in the first direction y relative to the first power wiring portion 511 in a plan view. As can be seen from FIGS. 4 and 5 , the second power wiring portion 512 is electrically connected to the second electrodes 12 (sources) of each first switching element 1 via a plurality of connecting members 71. Furthermore, as can be seen from the configuration described in detail later, the second power wiring portion 512 is electrically connected to the fourth electrodes 21 (drains) of each second switching element 2 via the fourth power wiring portion 514 and each metal member 59. The second power wiring portion 512 is formed to avoid each of the plurality of second switching elements 2 in a plan view.

[0042] 7 and 13, the second power wiring portion 512 includes a plurality of through holes 512b. As shown in Fig. 13, each of the plurality of through holes 512b penetrates the second power wiring portion 512 in the thickness direction z. As shown in Fig. 7 and 13, one of a plurality of metal members 59 is fitted into each of the through holes 512b, and the inner surface of each through hole 512b is in contact with the corresponding metal member 59. In the illustrated example, each through hole 512b is circular in plan view (see Fig. 7), but this may be changed as appropriate depending on the shape of each metal member 59.

[0043] The third power wiring portion 513 is formed on the back surface 502 of the insulating substrate 50A. As shown in Figures 9, 11, and 13 to 15, the third power wiring portion 513 is joined to the mounting surface 41a of the first mounting portion 41. The third power wiring portion 513 is electrically connected to each of the first electrodes 11 (drains) of the multiple first switching elements 1 via the first mounting portion 41.

[0044] As shown in FIGS. 9 , 14 , and 15 , the third power wiring portion 513 includes a plurality of openings 513 a and through-holes 513 b. As shown in FIGS. 14 and 15 , the plurality of openings 513 a each penetrates the third power wiring portion 513 in the thickness direction z. As can be seen from FIGS. 14 and 15 , the plurality of openings 513 a overlap with the plurality of openings 505 of the insulating substrate 50A in a plan view. As shown in FIG. 9 , each opening 513 a surrounds a corresponding one of the plurality of first switching elements 1 in a plan view. The through-hole 513 b penetrates the third power wiring portion 513 in the thickness direction z. As shown in FIG. 9 , a metal member 58 is fitted into the through-hole 513 b, and the inner surface of the through-hole 513 b contacts the metal member 58. In the present disclosure, "fitted" refers to a state in which a certain member (e.g., metal member 58) is inserted into a certain through-hole (e.g., through-hole 513b) and the certain member is in contact with the inner surface of the certain through-hole. In other words, the "fitted" state corresponds to the "inserted" state in which the certain member is in contact with the inner surface of the through-hole.

[0045] The fourth power wiring portion 514 is formed on the back surface 502 of the insulating substrate 50A. As shown in FIGS. 9 , 12 to 14 , and 16 , the fourth power wiring portion 514 is joined to the mounting surface 42a of the second mounting portion 42. The fourth power wiring portion 514 is electrically connected to each fourth electrode 21 (drain) of the plurality of second switching elements 2 via the second mounting portion 42. As will be understood from the configuration described in detail later, the fourth power wiring portion 514 is also electrically connected to the second electrode 12 (source) of each first switching element 1 via the second power wiring portion 512 and each metal member 59.

[0046] As shown in FIGS. 9 , 13 , 14 , and 16 , the fourth power wiring portion 514 includes a plurality of openings 514 a and a plurality of through holes 514 b. As shown in FIGS. 14 and 16 , the plurality of openings 514 a each penetrates the fourth power wiring portion 514 in the thickness direction z. As can be seen from FIGS. 14 and 16 , the plurality of openings 514 a overlap with the plurality of openings 506 of the insulating substrate 50A in a plan view. As shown in FIG. 9 , each of the plurality of openings 514 a surrounds a corresponding one of the plurality of second switching elements 2 in a plan view. As shown in FIG. 13 , the plurality of through holes 514 b each penetrates the fourth power wiring portion 514 in the thickness direction z. As can be seen from FIG. 13 , the plurality of through holes 514 b each overlap with the plurality of through holes 512 b of the second power wiring portion 512 in a plan view. A plurality of metal members 59 are fitted into each of the through holes 514 b.

[0047] The semiconductor device A1 includes a first power terminal 5N, a second power terminal 51SW, a third power terminal 5P, and a fourth power terminal 52SW. The first power terminal 5N and the third power terminal 5P are connected to, for example, an external power source (DC power source) and a power supply voltage (DC voltage) is applied to them. In the semiconductor device A1, the third power terminal 5P is a P terminal connected to the positive pole of the DC power source, and the first power terminal 5N is an N terminal connected to the negative pole of the DC power source. The DC voltage applied to the third power terminal 5P and the first power terminal 5N is converted to an AC voltage by the switching operations of the multiple first switching elements 1 and the multiple second switching elements 2. The converted voltage (AC voltage) is output from each of the third power terminal 5P and the fourth power terminal 52SW. The main current in the semiconductor device A1 is generated by the power supply voltage and the converted voltage.

[0048] As shown in Figures 2 to 4, 7, and 11, the first power terminal 5N is part of the first power wiring section 511. Thus, the first power wiring section 511 includes the first power terminal 5N. As shown in Figures 2 to 4, 7, and 11, the first power terminal 5N is located at the end of the first power wiring section 511 on one side in the second direction x (the x1 side in the second direction x). Because the first power terminal 5N is part of the first power wiring section 511, it is electrically connected to the fifth electrode 22 (source) of each second switching element 2.

[0049] As shown in Figures 2 to 4, 7, and 12, the second power terminal 51SW is part of the second power wiring section 512. Therefore, the second power wiring section 512 includes the second power terminal 51SW. As shown in Figures 2 to 4, 7, and 12, the second power terminal 51SW is located at an end of the second power wiring section 512 on one side in the second direction x (the x1 side in the second direction x). Because the second power terminal 51SW is part of the second power wiring section 512, it is electrically connected to the second electrode 12 (source) of each first switching element 1 and the fourth electrode 21 (drain) of each second switching element 2.

[0050] As shown in Figures 4, 7, and 9 to 11, the third power terminal 5P is part of the third power wiring section 513. Thus, the third power wiring section 513 includes the third power terminal 5P. As shown in Figures 4, 7, and 9 to 11, the third power terminal 5P is located at the end of the third power wiring section 513 on one side in the second direction x (the x1 side in the second direction x). Because the third power terminal 5P is part of the third power wiring section 513, it is electrically connected to each of the first electrodes 11 (drains) of the multiple first switching elements 1.

[0051] As shown in Figures 4, 7, 9, 10, and 12, the fourth power terminal 52SW is part of the fourth power wiring section 514. Thus, the fourth power wiring section 514 includes the fourth power terminal 52SW. As shown in Figures 4, 7, 9, 10, and 12, the fourth power terminal 52SW is located at an end of the fourth power wiring section 514 on one side in the second direction x (the x1 side in the second direction x). Because the fourth power terminal 52SW is part of the fourth power wiring section 514, it is electrically connected to the second electrode 12 (source) of each first switching element 1 and the fourth electrode 21 (drain) of each second switching element 2.

[0052] The first power terminal 5N, the second power terminal 51SW, the third power terminal 5P, and the fourth power terminal 52SW are spaced apart from one another and, as shown in Figures 1, 3, and 10 to 12, are each exposed from the resin member 8. The surfaces of the first power terminal 5N, the second power terminal 51SW, the third power terminal 5P, and the fourth power terminal 52SW may or may not be plated.

[0053] 7, 9, and 11, the first power terminal 5N and the third power terminal 5P overlap each other in a plan view. As can be seen from Figures 7, 9, and 12, the second power terminal 51SW and the fourth power terminal 52SW overlap each other in a plan view. In the illustrated example, the semiconductor device A1 includes both the second power terminal 51SW and the fourth power terminal 52SW, but, unlike this configuration, the semiconductor device A1 may include only one of the second power terminal 51SW and the fourth power terminal 52SW.

[0054] The first signal wiring portion 52, the second signal wiring portion 53, the third signal wiring portion 54, the fourth signal wiring portion 55, and the signal wiring portion 56 form a conduction path for a control signal in the semiconductor device A1. The first signal wiring portion 52, the second signal wiring portion 53, the third signal wiring portion 54, the fourth signal wiring portion 55, and the signal wiring portion 56 are each formed on the main surface 501 of the insulating substrate 50A, as shown in FIGS.

[0055] 2 and 4 , the first signal wiring portion 52 is conductively joined to the first signal terminal 61. The first signal wiring portion 52 is electrically connected to each of the third electrodes 13 (gates) of the plurality of first switching elements 1. The first signal wiring portion 52, together with the plurality of connection members 731, forms a transmission path for transmitting the first drive signal. As shown in FIGS. 4 , 7 and 11 , the first signal wiring portion 52 includes a joint portion 521, a plurality of individual portions 522, and an extending portion 523.

[0056] 4 and 11 , the first signal terminal 61 is joined to the joint portion 521. As shown in FIGS. 4 and 7 , the joint portion 521 is located at the end of the insulating substrate 50A on the x2 side in the second direction x in a plan view. The joint portion 521 is electrically connected to the plurality of individual portions 522.

[0057] As shown in FIGS. 4 , 7 , and 11 , the multiple individual parts 522 are arranged along the second direction x and spaced apart from one another. As shown in FIGS. 4 and 7 , each of the multiple individual parts 522 has a strip shape extending in the second direction x in a plan view. As shown in FIGS. 4 , 7 , and 11 , one of the multiple connecting members 731 is joined to each of the multiple individual parts 522. Furthermore, one of the multiple first circuit components 32A is joined to each of the multiple individual parts 522. Any two individual parts 522 adjacent to each other in the second direction x are electrically connected via a corresponding one of the multiple first circuit components 32A. As shown in FIGS. 4 and 7 , the multiple individual parts 522 are located on the opposite side of the multiple first switching elements 1 in the first direction y from the side on which the multiple second switching elements 2 are located (the y1 side in the first direction y). The multiple individual parts 522 are located on the x1 side in the second direction x relative to the joint part 521.

[0058] The extending portion 523 extends from the joint portion 521 to any one of the multiple individual portions 522. The extending portion 523 electrically connects the joint portion 521 to any one of the multiple individual portions 522. In the examples shown in Figures 4 and 7, the extending portion 523 is connected to the individual portion 522 that is closest to the joint portion 521 in the second direction x among the multiple individual portions 522. In the example shown in Figure 4, the individual portion 522 connected to the extending portion 523 is located closest to the x2 side in the second direction x among the multiple individual portions 522.

[0059] As shown in FIGS. 2 and 4 , the second signal wiring portion 53 is conductively joined to the second signal terminal 62. The second signal wiring portion 53 is electrically connected to each of the sixth electrodes 23 of the plurality of second switching elements 2. The second signal wiring portion 53, together with the plurality of connecting members 732, forms a transmission path for transmitting the second drive signal. A plurality of second circuit components 32B are joined to the second signal wiring portion 53. As shown in FIGS. 4 , 7 , and 12 , the second signal wiring portion 53 includes a joint portion 531, a plurality of individual portions 532, and an extending portion 533.

[0060] As shown in Fig. 4 , the first signal terminal 61 is joined to the joint portion 531. As shown in Fig. 4 and Fig. 7 , the joint portion 531 is located at the end of the insulating substrate 50A on the x2 side in the second direction x in a plan view. The joint portion 531 is electrically connected to a plurality of individual portions 532.

[0061] As shown in FIGS. 4 , 7 , and 12 , the multiple individual parts 532 are arranged along the second direction x and spaced apart from one another. As shown in FIGS. 4 and 7 , each of the multiple individual parts 532 has a strip shape extending in the second direction x in a plan view. As shown in FIGS. 4 , 7 , and 12 , each of the multiple individual parts 532 is joined to one of the multiple connecting members 732. Furthermore, each of the multiple individual parts 532 is joined to one of the multiple second circuit components 32B. Any two individual parts 532 adjacent to each other in the second direction x are electrically connected via a corresponding one of the multiple second circuit components 32B. As shown in FIGS. 4 and 7 , the multiple individual parts 532 are located on the opposite side of the multiple second switching elements 2 in the first direction y from the side on which the multiple first switching elements 1 are located (the y2 side in the first direction y). The multiple individual parts 532 are located on the x1 side in the second direction x relative to the joint portion 531.

[0062] The extending portion 533 extends from the joint portion 531 to one of the plurality of individual portions 532. The extending portion 533 electrically connects the joint portion 531 to one of the plurality of individual portions 532. In the example shown in FIGS. 4 and 7 , the extending portion 533 is connected to the individual portion 532 that is closest to the joint portion 531 among the plurality of individual portions 532 in the second direction x. In the example shown in FIG. 4 , the individual portion 532 connected to the extending portion 533 is located closest to the x2 side of the plurality of individual portions 532 in the second direction x. In the example shown in FIGS. 4 and 7 , most of the extending portion 533 is strip-shaped extending in the first direction y in a plan view.

[0063] As shown in FIGS. 2 and 4 , the third signal wiring portion 54 is conductively connected to the third signal terminal 63. The third signal wiring portion 54 is electrically connected to each of the second electrodes 12 of the plurality of first switching elements 1. The third signal wiring portion 54, together with the plurality of connection members 741, forms a transmission path for transmitting the first detection signal. As shown in FIGS. 4 and 7 , the third signal wiring portion 54 includes a joint portion 541, a strip portion 542, a plurality of pad portions 543, and an extension portion 544. In the semiconductor device A1, the joint portion 541, the strip portion 542, the plurality of pad portions 543, and the extension portion 544 are integrally formed.

[0064] 4, the third signal terminal 63 is joined to the joint portion 541. The joint portion 541 is an end portion of the insulating substrate 50A in a plan view, and is located on the x2 side in the second direction x.

[0065] As shown in FIGS. 4 and 7 , the strip portion 542 extends in the second direction x in a plan view. The second direction x is the longitudinal direction of the strip portion 542. In the example shown in FIGS. 4 and 7 , the strip portion 542 is located on the y1 side in the first direction y with respect to the multiple first switching elements 1 in a plan view. Furthermore, the strip portion 542 is sandwiched between the multiple first switching elements 1 and the multiple individual portions 522 in the first direction y in a plan view. The strip portion 542 is located on the x1 side in the second direction x with respect to the joint portion 541.

[0066] As shown in FIGS. 4 , 5 , and 7 , each of the pad portions 543 is formed between two first switching elements 1 adjacent to each other in the second direction x in a plan view. Each of the pad portions 543 is connected to the strip portion 542, and in this embodiment, is connected to an edge of the strip portion 542 on the side (y2 side) where the first switching elements 1 are located in the first direction y. Each of the pad portions 543 overlaps the strip portion 542 when viewed in the first direction y. Unlike the illustrated example, each pad portion 543 may be separated from the strip portion 542.

[0067] 4 and 7, the extension portion 544 extends from the joint portion 541 to the strip portion 542. The extension portion 544 electrically connects the joint portion 541 and the strip portion 542.

[0068] 2 and 4 , the fourth signal wiring portion 55 is conductively joined to the fourth signal terminal 64. The fourth signal wiring portion 55 is electrically connected to each of the second electrodes 12 of the plurality of second switching elements 2. The fourth signal wiring portion 55, together with the plurality of connection members 742, forms a transmission path for transmitting the second detection signal. As shown in FIGS. 4 and 7 , the fourth signal wiring portion 55 includes a joint portion 551, a strip portion 552, a plurality of pad portions 553, and an extension portion 554. In the semiconductor device A1, the joint portion 551, the strip portion 552, the plurality of pad portions 553, and the extension portion 554 are integrally formed.

[0069] 4, the fourth signal terminal 64 is joined to the joint portion 551. The joint portion 551 is an end portion of the insulating substrate 50A in a plan view, and is located on the x2 side in the second direction x.

[0070] As shown in FIGS. 4 and 7 , the strip portion 552 extends in the second direction x in a plan view. The second direction x is the longitudinal direction of the strip portion 552. In the example shown in FIGS. 4 and 7 , the strip portion 552 is located on the y2 side in the first direction y with respect to the plurality of second switching elements 2 in a plan view. Furthermore, the strip portion 552 is sandwiched between the plurality of second switching elements 2 and the plurality of individual portions 532 in the first direction y in a plan view. The strip portion 552 is located on the x1 side in the second direction x with respect to the joint portion 551. The strip portion 552 is parallel (or approximately parallel) to the strip portion 542 in a plan view.

[0071] 4, 6, and 7, the pad portions 553 are formed between two adjacent second switching elements 2 in the first direction y in a plan view. Each of the pad portions 553 is connected to the strip portion 552, and in this embodiment, is connected to an edge of the strip portion 552 on the side (y2 side) where the second switching elements 2 are located in the first direction y. The pad portions 553 overlap the strip portion 552 when viewed in the first direction y. Unlike the example shown in the drawings, each pad portion 553 may be separated from the strip portion 552.

[0072] 4 and 7, the extension portion 554 extends from the joint portion 551 to the strip portion 552. The extension portion 554 electrically connects the joint portion 551 and the strip portion 552. In the example shown in FIGS. 4 and 7, most of the extension portion 554 is strip-shaped and extends in the first direction y.

[0073] As shown in Fig. 2, the signal wiring portion 56 is conductively joined to a signal terminal 65. The signal wiring portion 56 is electrically connected to each of the first electrodes 11 of the plurality of first switching elements 1. As shown in Fig. 7, a through hole 561 is formed in the signal wiring portion 56. The through hole 561 penetrates the signal wiring portion 56 in the thickness direction z. As shown in Fig. 7, a metal member 58 is fitted into the through hole 561.

[0074] As shown in FIG. 11 , each of the multiple metal members 59 penetrates the insulating substrate 50A in the thickness direction z, and provides electrical continuity between the second power wiring portion 512 and the fourth power wiring portion 514. Each metal member 59 is, for example, columnar. In the illustrated example, the shape of each metal member 59 in plan view is circular (see FIGS. 5 to 8 ). However, the shape of each metal member 59 in plan view may be elliptical or polygonal. Each metal member 59 is made of, for example, copper or a copper alloy.

[0075] As shown in FIGS. 6 to 8 and 11 , the multiple metal members 59 are individually fitted into the multiple through holes 512b of the second power wiring section 512 and the multiple through holes 514b of the fourth power wiring section 514. The multiple metal members 59 are also individually inserted into the multiple through holes 503 of the insulating substrate 50A. Each of the multiple metal members 59 contacts the inner surface of a corresponding one of the multiple through holes 512b and the inner surface of a corresponding one of the multiple through holes 514b. The multiple metal members 59 are supported by being fitted into the corresponding through holes 512b and the corresponding through holes 514b. If gaps are formed between the metal members 59 and the inner surfaces of the through holes 512b and the through holes 514b, solder may be poured into these gaps. As a result, the gaps are filled with solder, and each metal member 59 is fixed to the second power wiring portion 512 and the fourth power wiring portion 514. When the solder is poured, the solder can also fill the gaps between each metal member 59 and the inner surface of the through hole 503 of the insulating substrate 50A.

[0076] The metal member 58 penetrates the insulating substrate 50A in the thickness direction z, and provides electrical continuity between the third power wiring portion 513 and the signal wiring portion 56. The metal member 58 is, for example, columnar. In the illustrated example, the shape of the metal member 58 in a planar view is circular (see FIGS. 6 to 8 ). However, the shape of the metal member 58 in a planar view may be elliptical or polygonal. The metal member 58 is made of, for example, copper or a copper alloy.

[0077] As shown in Figures 7 to 9, the metal member 58 is fitted into the through hole 561 of the signal wiring portion 56 and the through hole 513b of the third power wiring portion 513, and is also inserted into the through hole 504 of the insulating substrate 50A. As shown in Figures 7 to 9, the metal member 58 is in contact with the inner surfaces of the through holes 561, 513b, and 504. At this time, if gaps are formed between the metal member 58 and the inner surfaces of the through holes 561, 513b, and 504, solder may be poured into these gaps. This fills the gaps with solder, and the metal member 58 is fixed to the third power wiring portion 513, the signal wiring portion 56, and the insulating substrate 50A.

[0078] 14 and 15 , in the semiconductor device A1, the multiple first switching elements 1 are each housed in a recess formed by a corresponding one of the multiple openings 505 in the insulating substrate 50A and a corresponding one of the multiple openings 513a in the third power wiring portion 513, and the first mounting portion 41. In the illustrated example, the element main surface 10a of each first switching element 1 overlaps either the insulating substrate 50A or the third power wiring portion 513 when viewed in a direction perpendicular to the thickness direction z (in each of the first direction y and the second direction x), but may also overlap the first power wiring portion 511. In either case, each first switching element 1 does not protrude upward in the thickness direction z beyond the first power wiring portion 511. 14 and 16 , each of the second switching elements 2 is housed in a recess formed by a corresponding one of the openings 506 in the insulating substrate 50A and a corresponding one of the openings 514a in the fourth power wiring portion 514, and the second mounting portion 42. In the illustrated example, the element main surface 20a of each second switching element 2 overlaps either the insulating substrate 50A or the fourth power wiring portion 514 when viewed in a direction orthogonal to the thickness direction z (each of the first direction y and the second direction x), but may also overlap the second power wiring portion 512. In either case, each second switching element 2 does not protrude upward in the thickness direction z beyond the second power wiring portion 512.

[0079] The first signal terminal 61, the second signal terminal 62, the third signal terminal 63, the fourth signal terminal 64, and the signal terminal 65 are each made of a conductive material. This conductive material is, for example, copper or a copper alloy. The first signal terminal 61, the second signal terminal 62, the third signal terminal 63, the fourth signal terminal 64, and the signal terminal 65 are each formed by cutting and bending a plate-like member. As shown in FIGS. 1 to 4 and 10 , the first signal terminal 61, the second signal terminal 62, the third signal terminal 63, the fourth signal terminal 64, and the signal terminal 65 are each located on the x2 side of the second direction x relative to the first switching elements 1 and the second switching elements 2, and are located on the opposite side of the first power terminal 5N, the second power terminal 51SW, the third power terminal 5P, and the fourth power terminal 52SW relative to the first switching elements 1 and the second switching elements 2.

[0080] The first signal terminal 61 is electrically connected to the third electrode 13 (gate) of each first switching element 1. A first drive signal for controlling the switching operation of each first switching element 1 is input to the first signal terminal 61. As shown in FIGS. 1 to 4 , 10 , and 11 , the first signal terminal 61 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8. The portion of the first signal terminal 61 covered with the resin member 8 is joined to the joint 521 of the first signal wiring portion 52. The portion of the first signal terminal 61 exposed from the resin member 8 is connected to an external control device (e.g., a gate driver), and a first drive signal (gate voltage) is input from the control device.

[0081] The second signal terminal 62 is electrically connected to the sixth electrode 23 (gate) of each second switching element 2. A second drive signal that controls the switching operation of each second switching element 2 is input to the second signal terminal 62. As shown in FIGS. 1 to 4 and 10 , the second signal terminal 62 includes a portion that is covered with the resin member 8 and a portion that is exposed from the resin member 8. The portion of the second signal terminal 62 that is covered with the resin member 8 is joined to a joint portion 531 of the second signal wiring portion 53.

[0082] The third signal terminal 63 is electrically connected to the second electrode 12 (source) of each first switching element 1. The third signal terminal 63 outputs a first detection signal indicating the conductive state (operating state) of each first switching element 1. In the semiconductor device A1, a voltage (a voltage corresponding to the source current) applied to the second electrode 12 of each first switching element 1 is output from the third signal terminal 63 as the first detection signal. As shown in FIGS. 1 to 4 and 10 , the third signal terminal 63 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8. The portion of the third signal terminal 63 covered with the resin member 8 is joined to the joint portion 541 of the third signal wiring portion 54. The portion of the third signal terminal 63 exposed from the resin member 8 is connected to the external control device and outputs the first detection signal of the control device.

[0083] The fourth signal terminal 64 is electrically connected to the fifth electrode 22 (source) of each second switching element 2. The fourth signal terminal 64 outputs a second detection signal indicating the conductive state (operating state) of each second switching element 2. In the semiconductor device A1, a voltage (a voltage corresponding to the source current) applied to the fifth electrode 22 of each second switching element 2 is output from the fourth signal terminal 64 as the second detection signal. As shown in FIGS. 1 to 4 and 10 , the fourth signal terminal 64 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8. The portion of the fourth signal terminal 64 covered with the resin member 8 is joined to the joint portion 551 of the fourth signal wiring portion 55. The portion of the fourth signal terminal 64 exposed from the resin member 8 is connected to the external control device and outputs the second detection signal to the control device.

[0084] The signal terminal 65 is electrically connected to the first electrode 11 (drain) of each first switching element 1. The signal terminal 65 outputs a voltage (a voltage corresponding to the drain current) to be applied to the first electrode 11 of each first switching element 1. As shown in FIGS. 1 to 4 and 10 , the signal terminal 65 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8. The portion of the signal terminal 65 covered with the resin member 8 is joined to the signal wiring portion 56. The portion of the signal terminal 65 exposed from the resin member 8 is connected to the external control device and outputs a voltage (a voltage corresponding to the drain current) to be applied to the first electrode 11 of each first switching element 1 to the control device.

[0085] The first snubber element 31A is joined to the main surface wiring 50B. The first snubber element 31A is electrically connected between the first power wiring portion 511 and the second power wiring portion 512. As shown in FIGS. 4 , 7 , 17 , and 18 , the first snubber element 31A includes a first capacitor 311A. In the semiconductor device A1, the first snubber element 31A is configured by the first capacitor 311A. As shown in FIGS. 4 and 17 , the first capacitor 311A ​​has a pair of terminal portions 3111. One of the pair of terminal portions 3111 is conductively joined to the first power wiring portion 511. The other of the pair of terminal portions 3111 is conductively joined to the second power wiring portion 512. As a result, the first power terminal 5N (first power wiring section 511) and the second power terminal 51SW (second power wiring section 512) are electrically connected via the first capacitor 311A ​​(first snubber element 31A). The first snubber element 31A is arranged in the second direction x between the first power terminal 5N and the second power terminal 51SW and the plurality of first switching elements 1 and the plurality of second switching elements 2. In the example shown in FIG. 4 , the first snubber element 31A is arranged in the second direction x closer to the first power terminal 5N and the second power terminal 51SW than the plurality of first switching elements 1 and the plurality of second switching elements 2. However, conversely, the first snubber element 31A may be arranged closer to the plurality of first switching elements 1 and the plurality of second switching elements 2 than the first power terminal 5N and the second power terminal 51SW.

[0086] The second snubber element 31B is joined to the back surface wiring 50C. The second snubber element 31B is electrically connected between the third power wiring portion 513 and the fourth power wiring portion 514. As shown in FIGS. 9 , 17 , and 18 , the second snubber element 31B includes a second capacitor 311B. In the semiconductor device A1, the second snubber element 31B is formed by the second capacitor 311B. As shown in FIGS. 9 and 17 , the second capacitor 311B has a pair of terminal portions 3112. One of the pair of terminal portions 3112 is conductively joined to the third power wiring portion 513. The other of the pair of terminal portions 3112 is conductively joined to the fourth power wiring portion 514. As a result, the third power terminal 5P (third power wiring portion 513) and the fourth power terminal 52SW (fourth power wiring portion 514) are electrically connected via the second capacitor 311B (second snubber element 31B). The second capacitor 311B overlaps the first capacitor 311A ​​in a planar view. That is, in the semiconductor device A1, the first snubber element 31A and the second snubber element 31B overlap each other in a planar view. Unlike this configuration, the first snubber element 31A and the second snubber element 31B do not have to overlap each other in a planar view. The second snubber element 31B does not overlap either the first mounting portion 41 or the second mounting portion 42 in a planar view. Furthermore, the second snubber element 31B overlaps the first mounting portion 41 and the second mounting portion 42 when viewed along the second direction x. In the example shown in Figure 9, the second snubber element 31B is arranged in the second direction x closer to the third power terminal portion 5P and the fourth power terminal portion 52SW than the multiple first switching elements 1 and the multiple second switching elements 2, but conversely, it may be arranged closer to the multiple first switching elements 1 and the multiple second switching elements 2 than the third power terminal portion 5P and the fourth power terminal portion 52SW.

[0087] As shown in FIG. 17 , the semiconductor device A1 further includes a pair of conductive bonding materials 319A and a pair of conductive bonding materials 319B. The pair of conductive bonding materials 319A and the pair of conductive bonding materials 319B are, for example, solder, but may also be sintered metal or the like. As shown in FIG. 17 , one of the pair of conductive bonding materials 319A bonds one of the pair of terminals 3111 to the first power wiring portion 511, and the other of the pair of conductive bonding materials 319A bonds the other of the pair of terminals 3111 to the second power wiring portion 512. As shown in FIG. 17 , one of the pair of conductive bonding materials 319B bonds one of the pair of terminals 3112 to the third power wiring portion 513, and the other of the pair of conductive bonding materials 319B bonds the other of the pair of terminals 3112 to the fourth power wiring portion 514.

[0088] The plurality of first circuit components 32A and the plurality of second circuit components 32B are each bonded to the wiring board 5. The plurality of first circuit components 32A and the plurality of second circuit components 32B are each, for example, ferrite beads. Ferrite beads are inductance elements that increase the impedance of high-frequency signals (currents) relatively more than that of low-frequency signals. In the illustrated example, the plurality of first circuit components 32A and the plurality of second circuit components 32B are each a surface-mount type, but they may also be lead-insertion type instead of a surface-mount type.

[0089] The multiple first circuit components 32A are connected to a first conductive member. The first conductive member is electrically connected to the first signal terminal 61 and connects the third electrodes 13 of the multiple first switching elements 1 to each other. The first conductive member is a transmission path for the first drive signal. In the semiconductor device A1, the first conductive member includes, for example, a portion of the first signal wiring portion 52 and multiple connecting members 731. The third electrodes 13 of the multiple first switching elements 1 are electrically connected to each other via at least one of the multiple first circuit components 32A. The multiple first circuit components 32A increase impedance in a first frequency band. The first frequency band is higher than the switching frequency of each first switching element 1. The first frequency band includes, for example, a resonant frequency of a resonant circuit formed including the parasitic inductance of the first conductive member. In the semiconductor device A1, this resonant circuit further includes the parasitic capacitance (drain-gate capacitance) of each first switching element 1.

[0090] The plurality of second circuit components 32B are connected to a second conductive member. The second conductive member is electrically connected to the second signal terminal 62 and connects the sixth electrodes 23 of the plurality of second switching elements 2 to each other. The second conductive member is a transmission path for the second drive signal. In the semiconductor device A1, the second conductive member includes, for example, a portion of the second signal wiring portion 53 and a plurality of connecting members 732. The sixth electrodes 23 of the plurality of second switching elements 2 are electrically connected to each other via at least one of the plurality of second circuit components 32B. The plurality of second circuit components 32B increase impedance in a second frequency band. The second frequency band is higher than the switching frequency of each second switching element 2. The second frequency band includes, for example, a resonant frequency of a resonant circuit formed including the parasitic inductance of the second conductive member. In the semiconductor device A1, this resonant circuit further includes the parasitic capacitance (drain-gate capacitance) of each second switching element 2.

[0091] In this embodiment, the switching frequency of each first switching element 1 is the same as the switching frequency of each second switching element 2, and the multiple first circuit components 32A and the multiple second circuit components 32B are the same type. Therefore, the first frequency band and the second frequency band are the same. Note that even if the switching frequency of each first switching element 1 is the same as the switching frequency of each second switching element 2, the first frequency band and the second frequency band may be different. Furthermore, when the switching frequency of each first switching element 1 is different from the switching frequency of each second switching element 2, the first frequency band and the second frequency band may be the same or different.

[0092] Each of the multiple connection members 7 electrically connects two parts spaced apart from each other. As described above, the multiple connection members 7 include multiple connection members 71, 72, 731, 732, 741, and 742. Each of the multiple connection members 7 is, for example, a bonding wire. Some of the multiple connection members 7 (for example, the multiple connection members 71 and 72) may be a metal plate material instead of a bonding wire. Each of the multiple connection members 7 may be made of gold, aluminum, or copper.

[0093] 4 and 5 , the plurality of connection members 71 are respectively joined to the first power pads 121 of the second electrodes 12 (sources) of the plurality of first switching elements 1 and the second power wiring portion 512, thereby establishing electrical continuity between them. A main current in the semiconductor device A1 flows through the plurality of connection members 71. Unlike the illustrated example, some of the connection members 71 may be joined to the upper surface of the metal member 59 rather than to the second power wiring portion 512.

[0094] 4 and 6 , the plurality of connection members 72 are joined to the second power pads 221 of the fifth electrodes 22 (sources) of the plurality of second switching elements 2 and the first power wiring portion 511, respectively, to establish electrical continuity therebetween. A main current in the semiconductor device A1 flows through the plurality of connection members 72.

[0095] 4 and 5 , the multiple connection members 731 are respectively joined to the third electrodes 13 (gates) of the multiple first switching elements 1 and the individual parts 522 of the first signal wiring portion 52, thereby conducting these elements. The multiple connection members 731 transmit the first drive signal together with the first signal wiring portion 52. Each connection member 731 is part of the first conductive member. For two first switching elements 1 out of the multiple first switching elements 1, the first conductive member is configured by the connection member 731 connected to one first switching element 1, the connection member 731 connected to the other first switching element 1, and the portions of the first signal wiring portion 52 to which these connection members 731 are connected.

[0096] 4 and 6 , the multiple connection members 732 are respectively joined to the sixth electrodes 23 (gates) of the multiple second switching elements 2 and the individual portions 532 of the second signal wiring portion 53, thereby conducting these elements. The multiple connection members 732 transmit the second drive signal together with the second signal wiring portion 53. Each connection member 732 is part of the second conductive member. For two second switching elements 2 out of the multiple second switching elements 2, the second conductive member is formed by the connection member 732 connected to one second switching element 2, the connection member 732 connected to the other second switching element 2, and the portions of the second signal wiring portion 53 to which these connection members 732 are connected.

[0097] 4 and 5 , each of the plurality of connection members 741 is bonded to the first detection pad 122 of the second electrode 12 (source) of the corresponding first switching element 1 and the strip portion 542, thereby establishing electrical continuity between them. The plurality of connection members 741 transmit the first detection signal together with the third signal wiring portion 54. In an example in which the second electrode 12 of each first switching element 1 is formed by one pad, each connection member 741 is bonded to that pad together with the connection member 71.

[0098] 4 and 6 , each of the plurality of connection members 742 is joined to the second detection pad 222 of the fifth electrode 22 (source) of the corresponding second switching element 2 and the strip portion 552, thereby establishing electrical continuity between them. The plurality of connection members 742 transmit the second detection signal together with the fourth signal wiring portion 55. In an example in which the fifth electrode 22 of each second switching element 2 is formed by one pad, each connection member 742 is joined to that pad together with the connection member 72.

[0099] The wire diameters of the multiple connecting members 71, 72, 731, 732, 741, and 742 are not particularly limited, but in the semiconductor device A1, these wire diameters have the following relationship: The wire diameters of the multiple connecting members 71 and 72 are larger than the wire diameters of the multiple connecting members 731, 732, 741, and 742. This is because the main current flows through the multiple connecting members 71 and 72. Furthermore, the wire diameters of the multiple connecting members 741 and 742 are larger than the wire diameters of the multiple connecting members 731 and 732.

[0100] The resin member 8 is a sealing material that protects the first switching elements 1, the second switching elements 2, the first snubber element 31A, the second snubber element 31B, etc. The resin member 8 is made of an insulating resin material, such as black epoxy resin. As shown in FIGS. 3 and 10 , the resin member 8 has a rectangular shape in a plan view.

[0101] As shown in FIGS. 1 , 3 , 4 , and 10 to 14 , the resin member 8 has a resin main surface 81, a resin back surface 82, and multiple resin side surfaces 831 to 834. As shown in FIGS. 10 to 14 , the resin main surface 81 and the resin back surface 82 are spaced apart in the thickness direction z. The resin main surface 81 faces upward in the thickness direction z (the z1 side in the thickness direction z), and the resin back surface 82 faces downward in the thickness direction z (the z2 side in the thickness direction z). As shown in FIGS. 10 to 14 , each of the multiple resin side surfaces 831 to 834 is sandwiched between the resin main surface 81 and the resin back surface 82 in the thickness direction z and is connected to the resin main surface 81 and the resin back surface 82, respectively. As shown in FIGS. 3 , 4 , and 10 to 12 , the resin side surfaces 831 and the resin side surfaces 832 are spaced apart in the second direction x. The resin side surface 831 faces the x2 side in the second direction x, and the resin side surface 832 faces the x1 side in the second direction x. The first signal terminal 61, the second signal terminal 62, the third signal terminal 63, the fourth signal terminal 64, and the signal terminal 65 each protrude from the resin side surface 831 as shown in FIGS. 3 , 4 , 10 , 13 , and 14 . The resin side surface 833 and the resin side surface 834 are spaced apart in the first direction y. The resin side surface 833 faces the y2 side in the first direction y, and the resin side surface 834 faces the y1 side in the first direction y.

[0102] 1, 3, 4, and 10 to 12, the resin member 8 includes a plurality of notches 84. Each of the plurality of notches 84 is recessed from the resin side surface 832 and from either the resin main surface 81 or the resin back surface 82. As shown in FIGS. 1, 3, 4, and 10 to 12, the first power terminal 5N, the second power terminal 51SW, the third power terminal 5P, and the fourth power terminal 52SW are exposed from the resin member 8 through one of the plurality of notches 84.

[0103] The semiconductor device A1 has the following functions and effects.

[0104] The semiconductor device A1 includes a first snubber element 31A and a second snubber element 31B. The first snubber element 31A is electrically connected between a first power wiring portion 511 and a second power wiring portion 512, and the second snubber element 31B is electrically connected between a third power wiring portion 513 and a fourth power wiring portion 514. The first power wiring portion 511 is electrically connected to the fifth electrode 22 of at least one second switching element 2. The third power wiring portion 513 is electrically connected to the first electrode 11 of at least one first switching element 1. The second power wiring portion 512 and the fourth power wiring portion 514 are each electrically connected to the second electrode 12 of at least one first switching element 1 and the fourth electrode 21 of at least one second switching element 2. With this configuration, the second snubber element 31B is connected in parallel to at least one first switching element 1, and the first snubber element 31A is connected in parallel to at least one second switching element 2. This allows the semiconductor device A1 to have low inductance. Therefore, surge voltages caused by the switching operation of at least one first switching element 1 and at least one second switching element 2 are suppressed, allowing the semiconductor device A1 to handle a large current.

[0105] In the semiconductor device A1, the first snubber element 31A and the second snubber element 31B are covered with a resin member 8. With this configuration, the semiconductor device A1 incorporates the first snubber element 31A and the second snubber element 31B, eliminating the need to connect a separate snubber circuit to the outside of the semiconductor device A1. This improves the degree of freedom in connecting the external terminals (first power terminal 5N, second power terminal 51SW, third power terminal 5P, and fourth power terminal 52SW) of the semiconductor device A1.

[0106] In the semiconductor device A1, the plurality of first switching elements 1 are mounted on a first mounting portion 41, and the plurality of second switching elements 2 are mounted on a second mounting portion 42. The semiconductor device A1 also includes a wiring substrate 5. The wiring substrate 5 includes wiring sections for the main current of the semiconductor device A1 (first power wiring section 511, second power wiring section 512, third power wiring section 513, and fourth power wiring section 514) and wiring sections for control signals (first drive signal, second drive signal, first detection signal, second detection signal, etc.) of the semiconductor device A1 (first signal wiring section 52, second signal wiring section 53, third signal wiring section 54, fourth signal wiring section 55, and signal wiring section 56). This configuration improves the degree of freedom in wiring on the wiring substrate 5 compared to when the plurality of first switching elements 1 and the plurality of second switching elements 2 are bonded to the wiring substrate 5. That is, the semiconductor device A1 can easily incorporate the first snubber element 31A and the second snubber element 31B by including the wiring substrate 5. Furthermore, the semiconductor device A1 can arrange the first snubber element 31A and the second snubber element 31B so that they overlap each other when viewed in the thickness direction z. This prevents the resin member 8 from becoming too large in plan view.

[0107] The semiconductor device A1 includes multiple first circuit components 32A that increase impedance in a first frequency band, and the third electrodes 13 of the multiple first switching elements 1 are electrically connected to each other via at least one of the multiple first circuit components 32A. The first frequency band includes a resonant frequency of a resonant circuit formed including the parasitic inductance of the first conductive member. In the semiconductor device A1, the first conductive member is, for example, a portion of the first signal wiring portion 52 and each connecting member 731. When multiple first switching elements 1 are connected in parallel, a loop path is formed that passes through each first electrode 11 (drain) and each third electrode 13 (gate) of the multiple first switching elements 1. In this loop path, a resonant circuit including the parasitic inductance of the first conductive member is formed, and the impedance of this loop path at the resonant frequency of this resonant circuit is low. The resonance phenomenon that occurs when multiple first switching elements 1 are operated in parallel tends to occur more easily as the impedance of the loop path is lower. Therefore, in the semiconductor device A1, multiple first circuit components 32A are connected to the first conductive member, and the third electrodes 13 of the multiple first switching elements 1 are electrically connected to each other via at least one of the multiple first circuit components 32A. This increases the impedance in the first frequency band in the aforementioned loop path. Therefore, the semiconductor device A1 can suppress the resonance phenomenon that occurs when multiple first switching elements 1 are operated in parallel. This also applies to the parallel operation of multiple second switching elements 2. That is, the semiconductor device A1 includes multiple second circuit components 32B that increase the impedance in the second frequency band, and the sixth electrodes 23 of the multiple second switching elements 2 are electrically connected to each other via at least one of the multiple second circuit components 32B. This allows the semiconductor device A1 to suppress the resonance phenomenon that occurs when multiple second switching elements 2 are operated in parallel.

[0108] In the semiconductor device A1, each first circuit component 32A is an inductance element. Unlike this configuration, even if each first circuit component 32A is a resistor instead of an inductance element, the impedance in the first frequency band can be increased. That is, the semiconductor device A1 may use a resistor as each first circuit component 32A to suppress the resonance phenomenon that occurs when multiple first switching elements 1 are operated in parallel. However, using a resistor as each first circuit component 32A increases the impedance at frequencies other than the first frequency band, which may reduce the switching speed of each first switching element 1 and increase the switching loss of each first switching element 1. In contrast, if each first circuit component 32A is an inductance element, it is possible to suppress the increase in impedance at frequencies other than the first frequency band. As a result, the semiconductor device A1 can suppress the increase in impedance at the switching frequency of each first switching element 1, thereby suppressing, for example, a decrease in the switching speed of each first switching element 1 and an increase in switching loss of each first switching element 1. The same applies to each second circuit component 32B. In other words, because each second circuit component 32B is an inductance element, the semiconductor device A1 can suppress an increase in impedance at frequencies outside the second frequency band more effectively than if each second circuit component 32B were a resistor. This allows the semiconductor device A1 to suppress an increase in impedance at the switching frequency of each first switching element 1, thereby suppressing, for example, a decrease in the switching speed of each second switching element 2 and an increase in switching loss of each second switching element 2.

[0109] In the semiconductor device A1, each first circuit component 32A is a ferrite bead. Alternatively, the first circuit components 32A may be other inductance elements, such as coils (wire-wound inductance elements), instead of ferrite beads, to increase impedance in the first frequency band. In other words, the semiconductor device A1 may use inductance elements other than ferrite beads as each first circuit component 32A to suppress resonance that occurs when multiple first switching elements 1 are operated in parallel. However, while a typical inductance element (coil) primarily functions as a reactance component of impedance, a ferrite bead primarily functions as a resistance component in the high-frequency range. Because the reactance component does not involve energy loss, while the resistance component does, ferrite beads have a higher ability to absorb high-frequency vibrations and are more effective at eliminating high-frequency vibrations than typical inductance elements. Furthermore, by changing the type of ferrite bead used for each first circuit component 32A, the frequency characteristics and Q value of each first circuit component 32A can be easily adjusted in accordance with variations in performance of each first switching element 1 and unequal currents (drain currents) of each first switching element 1. Therefore, in the semiconductor device A1, using ferrite beads as the first circuit components 32A is preferable in terms of suppressing resonance compared to using other inductance elements. The same applies to each second circuit component 32B. In other words, in the semiconductor device A1, using ferrite beads as the second circuit components 32B is preferable in terms of suppressing resonance compared to using other inductance elements.

[0110] In the semiconductor device A1, the first signal wiring portion 52 includes a plurality of individual parts 522 spaced apart from one another. Each of the individual parts 522 is electrically connected to a corresponding one of the third electrodes 13 of the first switching elements 1 via a corresponding one of the connecting members 731. Each first circuit component 32A is joined to two of the individual parts 522 across the two individual parts 522. With this configuration, the third electrodes 13 of the first switching elements 1 are electrically connected to one another via two connecting members 731, two or more individual parts 522, and one or more first circuit components 32A. Therefore, the semiconductor device A1 can electrically connect the third electrodes 13 of the first switching elements 1 to one another via at least one of the first circuit components 32A. This also applies to the circuit configuration of the lower arm. In other words, the semiconductor device A1 can electrically connect the sixth electrodes 23 of the second switching elements 2 to one another via at least one of the second circuit components 32B.

[0111] In the semiconductor device A1, the third power terminal 5P is disposed on one side (the x1 side of the second direction x) of the arrangement direction (second direction x) of the multiple first switching elements 1. Resonance, which occurs when multiple first switching elements 1 are operated in parallel, can be suppressed by equalizing the conduction paths from the third power terminal 5P to the first electrodes 11 (drains) of each first switching element 1. However, in the semiconductor device A1, the positional relationship between the multiple first switching elements 1 and the third power terminal 5P makes it difficult to equalize the conduction paths. Therefore, when it is difficult to equalize the conduction paths from the third power terminal 5P to each third electrode 13, increasing the impedance between each third electrode 13 (gate) using the first circuit component 32A as described above is effective in suppressing resonance. This also applies to the circuit configuration of the lower arm. In other words, when it is difficult to equalize the conduction paths from the second power terminal portion 51SW (or the fourth power terminal portion 52SW) to the fourth electrode 21 (drain) of each second switching element 2, increasing the impedance between each sixth electrode 23 (gate) by using the second circuit component 32B as described above is effective in suppressing the resonance phenomenon.

[0112] Other embodiments and modifications of the semiconductor device of the present disclosure will be described below. The configurations of the components in each embodiment and each modification can be combined with each other as long as no technical contradiction occurs.

[0113] 19 to 21 show a semiconductor device A11 according to a modification of the first embodiment. The semiconductor device A11 differs from the semiconductor device A1 in the following respects. First, the configuration of the conduction path from the first signal terminal 61 to the third electrode 13 of each first switching element 1 is different. Second, the configuration of the conduction path from the second signal terminal 62 to the sixth electrode 23 of each second switching element 2 is different. Third, the configuration of the conduction path from the third signal terminal 63 to the second electrode 12 (first detection pad 122) of each first switching element 1 is different. Accordingly, the semiconductor device A11 further includes a plurality of third circuit components 33A. Fourth, the configuration of the conduction path from the fourth signal terminal 64 to the fifth electrode 22 (second detection pad 222) of each second switching element 2 is different. Accordingly, the semiconductor device A11 further includes a plurality of fourth circuit components 33B.

[0114] In the semiconductor device A11, the conduction path from the first signal terminal 61 to the third electrode 13 of each first switching element 1 is configured as follows: In the semiconductor device A11, two individual parts 522 adjacent to each other in the second direction x are electrically connected via a plurality of first circuit components 32A connected in series. Accordingly, the first signal wiring part 52 of the semiconductor device A11 includes a plurality of relay parts 524. The relay parts 524 are each disposed between two individual parts 522 adjacent to each other in the second direction x. A first circuit component 32A is joined to the adjacent relay parts 524 and individual parts 522. Thus, each relay part 524 is electrically connected to the adjacent individual part 522 on the x1 side in the second direction x via one of the plurality of first circuit components 32A, and is electrically connected to the adjacent individual part 522 on the x2 side in the second direction x via another one of the first circuit components 32A. Therefore, two individual units 522 adjacent in the second direction x are electrically connected via two first circuit components 32A and one relay unit 524. In the illustrated example, two individual units 522 adjacent in the second direction x are electrically connected via two first circuit components 32A. However, they may be electrically connected via three or more first circuit components 32A. In this case, the number of relay units 524 disposed between two individual units 522 adjacent in the second direction x may be increased, and the first circuit components 32A may be joined to the relay units 524. Furthermore, the extending unit 523 of the semiconductor device A11 is not connected to any of the multiple individual units 522 and is separated from the multiple individual units 522. However, the extending unit 523 and the adjacent individual unit 522 are connected to a first circuit component 32A, and are electrically connected via the first circuit component 32A. As a result, two first circuit components 32A are also connected between the third electrode 13 of the first switching element 1 that is located furthest from the x2 side of the second direction x among the multiple first switching elements 1 and the first signal terminal 61.

[0115] In the semiconductor device A11, the conduction path from the second signal terminal 62 to the sixth electrode 23 of each second switching element 2 is configured as follows: In the semiconductor device A11, two individual parts 532 adjacent in the second direction x are electrically connected via a plurality of second circuit components 32B connected in series. Accordingly, the second signal wiring part 53 of the semiconductor device A11 includes a plurality of relay parts 534. The relay parts 534 are each disposed between two individual parts 532 adjacent in the second direction x. A second circuit component 32B is joined to adjacent relay parts 534 and individual parts 532. Thus, each relay part 534 is electrically connected to the adjacent individual part 532 on the x1 side in the second direction x via one of the second circuit components 32B, and is electrically connected to the adjacent individual part 532 on the x2 side in the second direction x via another second circuit component 32B. In the illustrated example, two individual units 532 adjacent in the second direction x are electrically connected via two second circuit components 32B, but electrical connection may be established via three or more second circuit components 32B. In this case, the number of relay units 534 disposed between adjacent individual units 532 may be increased, and second circuit components 32B may be connected to the relay units 534 as well. The extending unit 533 of the semiconductor device A11 is divided into two portions and includes a relay unit 536. The relay unit 536 is disposed between the two portions of the extending unit 533. The second circuit component 32B is connected across one of the two portions of the extending unit 533 and the relay unit 536, and the second circuit component 32B is connected across the other of the two portions of the extending unit 533 and the relay unit 536. As a result, two second circuit components 32B are also connected between the sixth electrode 23 of the second switching element 2 that is located furthest from the second switching element 2 on the x2 side in the second direction x among the multiple second switching elements 2 and the second signal terminal 62.

[0116] In the semiconductor device A11, the conduction path from the third signal terminal 63 to the second electrode 12 (first detection pad 122) of each first switching element 1 is configured as follows. The third signal wiring portion 54 of the semiconductor device A11 includes a plurality of individual portions 545 instead of the strip portion 542. The plurality of individual portions 545 are arranged along the second direction x and spaced apart from one another. As shown in FIG. 20 , each of the plurality of individual portions 545 has a strip shape extending in the second direction x in a plan view. As can be seen from FIGS. 19 and 20 , each of the plurality of individual portions 545 is joined to one of the plurality of connecting members 741. Furthermore, each of the plurality of individual portions 545 is joined to one of the plurality of third circuit components 33A. For any two individual portions 545 adjacent to each other in the second direction x, the two individual portions 545 are electrically connected via a corresponding one of the plurality of third circuit components 33A. As shown in FIG. 20 , the multiple individual parts 545 are located on the opposite side of the multiple first switching elements 1 in the first direction y from the side on which the multiple second switching elements 2 are located (the y1 side in the first direction y). As with the first signal wiring part 52, in the third signal wiring part 54, two adjacent individual parts 545 in the second direction x may be electrically connected via multiple third circuit components 33A connected in series. In the semiconductor device A11, the extending part 544 is spaced apart from the multiple individual parts 545, and a third circuit component 33A is bonded to the extending part 544 and the adjacent individual part 545. As a result, the third circuit component 33A is also connected between the second electrode 12 (first detection pad 122) of the first switching element 1 located furthest to the x2 side in the second direction x among the multiple first switching elements 1 and the third signal terminal 63.

[0117] In the semiconductor device A11, the conduction path from the fourth signal terminal 64 to the fifth electrode 22 (second detection pad 222) of each second switching element 2 is configured as follows. The fourth signal wiring portion 55 of the semiconductor device A11 includes a plurality of individual portions 555 instead of the strip portion 552. The plurality of individual portions 555 are arranged along the second direction x and spaced apart from one another. As shown in FIG. 20 , each of the plurality of individual portions 555 has a strip shape extending in the second direction x in a plan view. As can be seen from FIGS. 19 and 20 , each of the plurality of individual portions 555 is joined to one of the plurality of connecting members 742. Furthermore, each of the plurality of individual portions 555 is joined to one of the plurality of fourth circuit components 33B. For any two individual portions 555 adjacent to each other in the second direction x, the two individual portions 555 are electrically connected via a corresponding one of the plurality of fourth circuit components 33B. As shown in FIG. 20 , the multiple individual parts 555 are located on the opposite side of the multiple second switching elements 2 in the first direction y from the side on which the multiple first switching elements 1 are located (the y2 side in the first direction y). As with the second signal wiring part 53, the fourth signal wiring part 55 may also have two adjacent individual parts 555 in the second direction x electrically connected to each other via multiple fourth circuit components 33B connected in series. In the semiconductor device A11, the extension part 554 is divided into two parts, and the fourth circuit component 33B is joined across the two parts. As a result, the fourth circuit component 33B is also connected between the fourth signal terminal 64 and the fifth electrode 22 (second detection pad 222) of the second switching element 2 located furthest to the x2 side in the second direction x among the multiple second switching elements 2.

[0118] The third circuit components 33A and the fourth circuit components 33B are elements for adjusting inductance. The third circuit components 33A and the fourth circuit components 33B are, for example, jumper pins or resistors (e.g., zero-ohm resistors). The third circuit components 33A and the fourth circuit components 33B may also be resistors or inductors with non-zero resistance.

[0119] 20 , the resin member 8 of the semiconductor device A11 includes two recesses 85. Each of the two recesses 85 is recessed from the resin side surface 831 toward the x1 side in the second direction x. One of the two recesses 85 is disposed between the third signal terminal 63 and the signal terminal 65 in a plan view, and the other of the two recesses 85 is disposed between the fourth signal terminal 64 and the signal terminal 65 in a plan view. This allows the creepage distance along the resin member 8 between the third signal terminal 63 and the signal terminal 65 and the creepage distance along the resin member 8 between the fourth signal terminal 64 and the signal terminal 65 to be increased.

[0120] Like the semiconductor device A1, the semiconductor device A11 includes a first snubber element 31A and a second snubber element 31B. Therefore, like the semiconductor device A1, the semiconductor device A11 can achieve low inductance. Furthermore, like the semiconductor device A1, the semiconductor device A11 has improved wiring flexibility on the wiring board 5 compared to a case in which multiple first switching elements 1 and multiple second switching elements 2 are bonded to the wiring board 5. This allows for easy mounting of circuit components such as the first snubber element 31A, the second snubber element 31B, the first circuit component 32A, the second circuit component 32B, the third circuit component 33A, and the fourth circuit component 33B.

[0121] In the semiconductor device A11, a plurality of first circuit components 32A connected in series are electrically interposed between two individual units 522 adjacent to each other in the second direction x. With this configuration, by appropriately combining the individual performances (such as the target frequency band and impedance described above) of the plurality of first circuit components 32A, it is possible to easily adjust the impedance between the two individual units 522 in accordance with variations in performance of the first switching elements 1 and inequality in the currents (drain currents) of the first switching elements 1. The same applies to the plurality of second circuit components 32B connected in series between two individual units 532 adjacent to each other in the second direction x.

[0122] In the semiconductor device A11, in each of the multiple first switching elements 1, at least one first circuit component 32A is interposed in the conduction path from the first signal terminal 61 to each third electrode 13. In a configuration different from the semiconductor device A11 and not including the first circuit component 32A, if the conduction path from the first signal terminal 61 to each third electrode 13 is short, the parasitic inductance in the conduction path is low. This reduction in parasitic inductance can cause unexpected parasitic oscillation in the first drive signal (e.g., gate voltage). However, in the semiconductor device A11, because the first circuit component 32A is electrically interposed in the conduction path from the first signal terminal 61 to each third electrode 13 in all first switching elements 1, the inductance of each conduction path can be increased. Therefore, even in the first switching element 1 having the shortest conduction path from the first signal terminal 61 to the third electrode 13, for example, it is possible to ensure an appropriate inductance in the conduction path from the first signal terminal 61 to the third electrode 13. Therefore, the semiconductor device A11 can suppress parasitic oscillation occurring in each first switching element 1. This is also true for the circuit configuration on the lower arm side. That is, in the semiconductor device A11, at least two second circuit components 32B are interposed in the conduction path from the second signal terminal 62 to each sixth electrode 23 in each of the multiple second switching elements 2. This allows the semiconductor device A11 to suppress parasitic oscillation occurring in each second switching element 2.

[0123] In the semiconductor device A11, a plurality of third circuit components 33A are electrically connected to the third signal wiring portion 54. Each of the plurality of third circuit components 33A is, for example, an element for adjusting inductance. This makes it possible to adjust the inductance value of the third signal wiring portion 54, i.e., the inductance value of the transmission path of the first detection signal. Similarly, in the semiconductor device A11, a plurality of fourth circuit components 33B are electrically connected to the fourth signal wiring portion 55. Each of the plurality of fourth circuit components 33B is, for example, an element for adjusting inductance. This makes it possible to adjust the inductance value of the fourth signal wiring portion 55, i.e., the inductance value of the transmission path of the second detection signal.

[0124] 22 to 25 show a semiconductor device A2 according to the second embodiment. The semiconductor device A2 differs from the semiconductor device A1 in the following respects. First, the first snubber element 31A of the semiconductor device A2 includes a first capacitor 311A ​​and a first resistor 312A. Accordingly, the main surface wiring 50B includes a pad portion 518. Second, the second snubber element 31B of the semiconductor device A2 includes a second capacitor 311B and a second resistor 312B. Accordingly, the back surface wiring 50C includes a pad portion 519.

[0125] 22 , the pad portion 518 is spaced apart from the first power wiring portion 511 and the second power wiring portion 512. In the illustrated example, notches are formed in parts of the first power wiring portion 511 and the second power wiring portion 512 in a plan view, and the pad portion 518 is disposed in an area defined by the notches. The pad portion 518 is located between the first power terminal portion 5N and the second power terminal portion 51SW and the plurality of first switching elements 1 and the plurality of second switching elements 2 in the second direction x. The first capacitor 311A ​​and the first resistor 312A are joined to the pad portion 518.

[0126] As described above, the first snubber element 31A of the semiconductor device A2 includes a first capacitor 311A ​​and a first resistor 312A. The first resistor 312A includes a pair of terminals 3121. One of the pair of terminals 3121 is joined to the pad 518 via a conductive bonding material 319A, and the other of the pair of terminals 3121 is joined to the first power wiring portion 511 via the conductive bonding material 319A. One of the pair of terminals 3111 of the first capacitor 311A ​​is joined to the pad 518 via the conductive bonding material 319A, and the other of the pair of terminals 3111 of the first capacitor 311A ​​is joined to the second power wiring portion 512 via the conductive bonding material 319A. With this configuration, the first capacitor 311A ​​and the first resistor 312A are electrically connected in series with each other and are also electrically connected between the first power wiring section 511 and the second power wiring section 512. Note that the positions of the first capacitor 311A ​​and the first resistor 312A may be reversed.

[0127] 23 , the pad portion 519 is spaced apart from the third power wiring portion 513 and the fourth power wiring portion 514. In the illustrated example, notches are formed in parts of the third power wiring portion 513 and the fourth power wiring portion 514 in a plan view, and the pad portion 519 is disposed in an area defined by the notches. The pad portion 519 is located between the third power terminal portion 5P and the fourth power terminal portion 52SW and the plurality of first switching elements 1 and the plurality of second switching elements 2 in the second direction x. The second capacitor 311B and the second resistor 312B are joined to the pad portion 519.

[0128] As described above, the second snubber element 31B of the semiconductor device A2 includes a second capacitor 311B and a second resistor 312B. The second resistor 312B includes a pair of terminals 3122. One of the pair of terminals 3122 is joined to the pad 519 via a conductive bonding material 319B, and the other of the pair of terminals 3122 is joined to the third power wiring portion 513 via a conductive bonding material 319B. One of the pair of terminals 3112 of the second capacitor 311B is joined to the pad 519 via a conductive bonding material 319B, and the other of the pair of terminals 3112 of the second capacitor 311B is joined to the fourth power wiring portion 514 via a conductive bonding material 319B. With this configuration, the second capacitor 311B and the second resistor 312B are electrically connected in series with each other and are also electrically connected between the third power wiring section 513 and the fourth power wiring section 514. Note that the positions of the second capacitor 311B and the second resistor 312B may be reversed. In the illustrated example, the second capacitor 311B overlaps the first capacitor 311A ​​in a plan view, and the second resistor 312B overlaps the first resistor 312A in a plan view.

[0129] The semiconductor device A2 is not limited to the above example, and for example, the first signal wiring portion 52 may be configured similarly to the semiconductor device A11 and the number of first circuit components 32A may be increased, or the second signal wiring portion 53 may be configured similarly to the semiconductor device A11 and the number of second circuit components 32B may be increased. Furthermore, the third signal wiring portion 54 may be configured similarly to the semiconductor device A11 and multiple third circuit components 33A may be added, or the fourth signal wiring portion 55 may be configured similarly to the semiconductor device A11 and multiple fourth circuit components 33B may be added. Furthermore, two recesses 85 may be provided in the resin member 8.

[0130] Like the semiconductor device A1, the semiconductor device A2 includes a first snubber element 31A and a second snubber element 31B. Therefore, like the semiconductor device A1, the semiconductor device A2 can achieve low inductance. Furthermore, as can be understood from this embodiment, the first snubber element 31A is not limited to being composed of only the first capacitor 311A, but may also include a first resistor 312A. Similarly, the second snubber element 31B is not limited to being composed of only the second capacitor 311B, but may also include a second resistor 312B.

[0131] In the first and second embodiments, each of the semiconductor devices A1 (A11), A2 includes a plurality of first switching elements 1, but unlike this example, it may be configured to include a single first switching element 1. Similarly, each of the semiconductor devices A1 (A11), A2 includes a plurality of second switching elements 2, but unlike this example, it may be configured to include a single second switching element 2.

[0132] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways. The present disclosure includes the embodiments described in the following appendices. Appendix 1. at least one first switching element, each having a first electrode, a second electrode, and a third electrode, and a switching operation of which is controlled in response to a first drive signal input to the third electrode; at least one second switching element, each having a fourth electrode, a fifth electrode, and a sixth electrode, and a switching operation of which is controlled in response to a second drive signal input to the sixth electrode; an insulating substrate having a main surface and a back surface facing opposite each other in a thickness direction, a wiring board having main surface wiring formed on the main surface, and back surface wiring formed on the back surface; a first mounting portion on which the at least one first switching element is mounted; a second mounting portion on which the at least one second switching element is mounted; a first snubber element joined to the main surface wiring; and a second snubber element joined to the back surface wiring, wherein each of the first mounting portion and the second mounting portion is located on a side facing the back surface relative to the wiring board in the thickness direction, the main surface wiring includes a first power wiring portion conducting to the fifth electrode of each of the at least one second switching elements and a second power wiring portion conducting to both the second electrode of each of the at least one first switching elements and the fourth electrode of each of the at least one second switching elements, the back surface wiring includes a third power wiring portion conducting to the first electrode of each of the at least one first switching elements and a fourth power wiring portion conducting to both the second electrode of each of the at least one first switching elements and the fourth electrode of each of the at least one second switching elements, the first snubber element is electrically connected between the first power wiring portion and the second power wiring portion, and the second snubber element is electrically connected between the third power wiring portion and the fourth power wiring portion. Appendix 2. The semiconductor device according to Appendix 1, wherein the first snubber element includes a first capacitor. Appendix 3. 3. The semiconductor device according to claim 1, wherein the second snubber element includes a second capacitor.Appendix 4. The semiconductor device according to any one of Appendix 1 to Appendix 3, wherein the first snubber element and the second snubber element overlap each other when viewed in the thickness direction. Appendix 5. The semiconductor device according to any one of Appendix 1 to Appendix 4, further comprising a resin member covering each of the at least one first switching element, each of the at least one second switching element, the first snubber element, and the second snubber element, wherein the resin member further covers a portion of the wiring board. Appendix 6. The semiconductor device according to Appendix 5, wherein the first power wiring portion and the second power wiring portion are spaced apart in a first direction perpendicular to the thickness direction, and the third power wiring portion and the fourth power wiring portion are spaced apart in the first direction. Appendix 7. The semiconductor device according to Appendix 6, wherein the first power wiring portion and the third power wiring portion overlap each other when viewed in the thickness direction, and the second power wiring portion and the fourth power wiring portion overlap each other when viewed in the thickness direction. Appendix 8. The semiconductor device according to Appendix 7, wherein the third power wiring portion is conductively joined to the first mounting portion, and the fourth power wiring portion is conductively joined to the second mounting portion. Appendix 9. The semiconductor device according to Appendix 8, wherein the wiring board has a metal member penetrating the insulating substrate in the thickness direction, and the second power wiring portion and the fourth power wiring portion are conductive to each other via the metal member. Appendix 10. The semiconductor device according to Appendix 8 or Appendix 9, wherein the first power wiring portion includes a first power terminal portion exposed from the resin member, the first power terminal portion is located at an end of the first power wiring portion on one side in a second direction orthogonal to the thickness direction and the first direction, and the second power wiring portion includes a second power terminal portion exposed from the resin member, and the second power terminal portion is located at an end of the second power wiring portion on the one side in the second direction. Appendix 11. The semiconductor device described in Appendix 10, wherein the third power wiring portion includes a third power terminal portion exposed from the resin member, the third power terminal portion is located at an end portion of the third power wiring portion on the one side in the second direction, the fourth power wiring portion includes a fourth power terminal portion exposed from the resin member, and the fourth power terminal portion is located at an end portion of the fourth power wiring portion on the one side in the second direction.Appendix 12. The semiconductor device according to Appendix 11, wherein the first power terminal portion and the third power terminal portion overlap each other when viewed in the thickness direction, and the second power terminal portion and the fourth power terminal portion overlap each other when viewed in the thickness direction. Appendix 13. The semiconductor device according to Appendix 12, wherein the first snubber element is located between the at least one first switching element and the at least one second switching element and the first power terminal portion and the second power terminal portion in the second direction, and the second snubber element is located between the at least one first switching element and the at least one second switching element and the third power terminal portion and the fourth power terminal portion in the second direction. Appendix 14. The semiconductor device according to Appendix 13, wherein the at least one first switching element includes a plurality of first switching elements, and the plurality of first switching elements are connected in parallel to each other and arranged along the second direction. Appendix 15. The semiconductor device according to Supplementary Note 13 or Supplementary Note 14, wherein the at least one second switching element includes a plurality of second switching elements, and the plurality of second switching elements are connected in parallel to each other and arranged along the second direction.Supplementary Note 16. The semiconductor device according to any of Supplementary Note 1 to Supplementary Note 15, further comprising: a first signal terminal for inputting the first drive signal; and a second signal terminal for inputting the second drive signal, wherein the main surface wiring includes a first signal wiring portion conducting to the third electrode of each of the at least one first switching element and a second signal wiring portion conducting to the sixth electrode of each of the at least one second switching element, the first signal terminal being electrically connected to the first signal wiring portion, and the second signal terminal being electrically connected to the second signal wiring portion.Supplementary Note 17. The semiconductor device according to Supplementary Note 16, further comprising: a third signal terminal for detecting an operating state of the at least one first switching element; and a fourth signal terminal for detecting an operating state of the at least one second switching element, wherein the main surface wiring includes a third signal wiring portion conducting to the second electrode of each of the at least one first switching elements and a fourth signal wiring portion conducting to the fourth electrode of each of the at least one second switching elements, the third signal terminal being electrically connected to the third signal wiring portion, and the fourth signal terminal being electrically connected to the fourth signal wiring portion.

[0133] A1, A11, A2: semiconductor device 1: first switching element 10a: element main surface 10b: element back surface 11: first electrode 12: second electrode 121: first power pad 122: first detection pad 13: third electrode 19: conductive bonding material 2: second switching element 20a: element main surface 20b: element back surface 21: fourth electrode 22: fifth electrode 221: second power pad 222: second detection pad 23: sixth electrode 29: conductive bonding material 31A: first snubber element 311A: first capacitor 3111: terminal portion 312A: first resistor 3121: terminal portion 319A: conductive bonding material 31B: second snubber element 311B: second capacitor 3112: terminal portion 312B: second resistor 3122: Terminal portion 319B: Conductive bonding material 32A: First circuit component 32B: Second circuit component 33A: Third circuit component 33B: Fourth circuit component 4: Support member 41: First mounting portion 419: Bonding material 41a: Mounting surface 42: Second mounting portion 42a: Mounting surface 429: Bonding material 43: First insulating plate 44: Second insulating plate 5: Wiring board 5N: First power terminal portion 5P: Third power terminal portion 51SW: Second power terminal portion 52SW: Fourth power terminal portion 50A: Insulating board 501: Main surface 502: Back surface 503: Through hole 504: Through hole 505: Opening 506: Opening 50B: Main surface wiring 50C: Back surface wiring 511: First power wiring portion 512: Second power wiring portion 512b: Through hole 513: Third power wiring section 513a: Opening 513b: Through hole 514: Fourth power wiring section 514a: Opening 514b: Through hole 518: Pad section 519: Pad section 52: First signal wiring section 521: Bonding section 522: Individual section 523: Extension section 524: Relay section 53: Second signal wiring section 531: Bonding section 532: Individual section 533: Extension section 534: Relay section 536: Relay section 54: Third signal wiring section 541: Bonding section 542: Strip section 543: Pad section 544: Extension section 545: Individual section 55: Fourth signal wiring section 551: Bonding section552: Strip-shaped portion 553: Pad portion 554: Extension portion 555: Individual portion 56: Signal wiring portion 561: Through hole 58: Metal member 59: Metal member 61: First signal terminal 62: Second signal terminal 63: Third signal terminal 64: Fourth signal terminal 65: Signal terminal 7: Connection member 71: Connection member 72: Connection member 731: Connection member 732: Connection member 741: Connection member 742: Connection member 8: Resin member 81: Resin main surface 82: Resin back surface 831: Resin side surface 832: Resin side surface 833: Resin side surface 834: Resin side surface 84: Notch 85: Recess

Claims

1. at least one first switching element, each of which has a first electrode, a second electrode, and a third electrode, and whose switching operation is controlled in response to a first drive signal input to the third electrode; at least one second switching element each having a fourth electrode, a fifth electrode and a sixth electrode, the switching operation of which is controlled in response to a second drive signal input to the sixth electrode; a wiring board having an insulating substrate having a main surface and a back surface facing in opposite directions in a thickness direction, a main surface wiring formed on the main surface, and a back surface wiring formed on the back surface; a first mounting portion for mounting the at least one first switching element; a second mounting portion for mounting the at least one second switching element; A first snubber element joined to the main surface wiring; A second snubber element joined to the back surface wiring; Equipped with each of the first mounting portion and the second mounting portion is located on a side toward which the rear surface faces relative to the wiring substrate in the thickness direction; the main surface wiring includes a first power wiring portion electrically connected to the fifth electrode of each of the at least one second switching elements, and a second power wiring portion electrically connected to both the second electrode of each of the at least one first switching elements and the fourth electrode of each of the at least one second switching elements, the back surface wiring includes a third power wiring portion that is electrically connected to the first electrode of each of the at least one first switching elements, and a fourth power wiring portion that is electrically connected to both the second electrode of each of the at least one first switching elements and the fourth electrode of each of the at least one second switching elements, the first snubber element is electrically connected between the first power wiring section and the second power wiring section, The second snubber element is electrically connected between the third power wiring portion and the fourth power wiring portion.

2. The semiconductor device according to claim 1 , wherein the first snubber element includes a first capacitor.

3. The semiconductor device according to claim 1 , wherein the second snubber element includes a second capacitor.

4. The semiconductor device according to claim 1 , wherein the first snubber element and the second snubber element overlap each other when viewed in the thickness direction.

5. a resin member that covers each of the at least one first switching element, each of the at least one second switching element, the first snubber element, and the second snubber element; 5. The semiconductor device according to claim 1, wherein the resin member further covers a portion of the wiring board.

6. the first power wiring portion and the second power wiring portion are spaced apart from each other in a first direction perpendicular to the thickness direction, The semiconductor device according to claim 5 , wherein the third power wiring portion and the fourth power wiring portion are spaced apart from each other in the first direction.

7. the first power wiring portion and the third power wiring portion overlap each other when viewed in the thickness direction, The semiconductor device according to claim 6 , wherein the second power wiring portion and the fourth power wiring portion overlap each other when viewed in the thickness direction.

8. the third power wiring portion is conductively joined to the first mounting portion, The semiconductor device according to claim 7 , wherein the fourth power wiring portion is conductively joined to the second mounting portion.

9. the wiring board has a metal member penetrating the insulating substrate in the thickness direction, The semiconductor device according to claim 8 , wherein the second power wiring portion and the fourth power wiring portion are electrically connected to each other via the metal member.

10. the first power wiring portion includes a first power terminal portion exposed from the resin member, the first power terminal portion is located at an end portion of the first power wiring portion on one side in a second direction perpendicular to the thickness direction and the first direction, the second power wiring portion includes a second power terminal portion exposed from the resin member, The semiconductor device according to claim 8 , wherein the second power terminal portion is located at an end portion of the second power wiring portion on the one side in the second direction.

11. the third power wiring portion includes a third power terminal portion exposed from the resin member, the third power terminal portion is located at an end portion of the third power wiring portion on the one side in the second direction, the fourth power wiring portion includes a fourth power terminal portion exposed from the resin member, The semiconductor device according to claim 10 , wherein the fourth power terminal portion is located at an end portion of the fourth power wiring portion on the one side in the second direction.

12. the first power terminal portion and the third power terminal portion overlap each other when viewed in the thickness direction, The semiconductor device according to claim 11 , wherein the second power terminal portion and the fourth power terminal portion overlap each other when viewed in the thickness direction.

13. the first snubber element is located between the at least one first switching element and the at least one second switching element, and between the first power terminal portion and the second power terminal portion in the second direction; 13. The semiconductor device according to claim 12, wherein the second snubber element is located between the at least one first switching element and the at least one second switching element and between the third power terminal portion and the fourth power terminal portion in the second direction.

14. the at least one first switching element includes a plurality of first switching elements; The semiconductor device according to claim 13 , wherein the plurality of first switching elements are connected in parallel to each other and arranged along the second direction.

15. the at least one second switching element includes a plurality of second switching elements; The semiconductor device according to claim 13 , wherein the second switching elements are connected in parallel to each other and arranged along the second direction.

16. a first signal terminal for inputting the first drive signal; a second signal terminal for inputting the second drive signal; the main surface wiring includes a first signal wiring portion electrically connected to the third electrode of each of the at least one first switching elements and a second signal wiring portion electrically connected to the sixth electrode of each of the at least one second switching elements, the first signal terminal is electrically connected to the first signal wiring portion, 5. The semiconductor device according to claim 1, wherein the second signal terminal is electrically connected to the second signal wiring portion.

17. a third signal terminal for detecting an operation state of the at least one first switching element; a fourth signal terminal for detecting an operation state of the at least one second switching element; the main surface wiring includes a third signal wiring portion electrically connected to the second electrode of each of the at least one first switching elements, and a fourth signal wiring portion electrically connected to the fourth electrode of each of the at least one second switching elements, the third signal terminal is electrically connected to the third signal wiring portion, The semiconductor device according to claim 16 , wherein the fourth signal terminal is electrically connected to the fourth signal wiring portion.