Semiconductor device

Abstract

This semiconductor device comprises: a first semiconductor element that has a first principal surface facing one side in a thickness direction, and a first principal-surface electrode disposed on the first principal surface; a second semiconductor element that has a second principal surface facing in the same direction as the first principal surface, and a second principal-surface electrode disposed on the second principal surface; a first die pad on which the first semiconductor element is mounted; a second die pad that is arranged on one side, in a first direction, of the first die pad and on which the second semiconductor element is mounted; a first terminal lead that is separated from the first die pad and the second die pad; and a sealing resin that covers the first semiconductor element and the second semiconductor element. The first principal-surface electrode and the second principal-surface electrode are electrically conductive with the first terminal lead within the sealing resin.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Conventionally, semiconductor devices in which a semiconductor element such as a diode or transistor is covered with a resin package are known (see, for example, Patent Document 1). The semiconductor device described in Patent Document 1 includes a semiconductor element, a lead frame, and a resin package. The lead frame includes multiple leads, one of which includes a die bonding pad. The semiconductor element is mounted on the die bonding pad. The resin package covers the semiconductor element and also partially covers each of the multiple leads. The portions of each lead exposed from the resin package are terminals of the semiconductor device.

[0003] Such semiconductor devices are mounted on a circuit board of an electronic device, for example, and used in a power supply circuit. The power supply circuit may include multiple semiconductor devices, and in this case, the multiple semiconductor devices are mounted on the aforementioned circuit board.

[0004] JP 2011-82523 A

[0005] In recent years, as electronic devices have become smaller, there has been a demand for smaller circuit boards mounted on the electronic devices. However, in the configuration in which multiple semiconductor devices are mounted on a circuit board as described above, the mounting area on the circuit board becomes large, making it difficult to achieve a small circuit board.

[0006] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can reduce the mounting area on a circuit board.

[0007] A semiconductor device provided by one aspect of the present disclosure includes a first semiconductor element having a first main surface facing one side in a thickness direction and a first main surface electrode arranged on the first main surface, a second semiconductor element having a second main surface facing the same direction as the first main surface and a second main surface electrode arranged on the second main surface, a first die pad on which the first semiconductor element is mounted, a second die pad on which the second semiconductor element is mounted and which is arranged on one side of the first die pad in a first direction perpendicular to the thickness direction, first terminal leads spaced from the first die pad and the second die pad, and a sealing resin covering the first semiconductor element and the second semiconductor element, wherein the first main surface electrode and the second main surface electrode are electrically connected to the first terminal leads within the sealing resin.

[0008] According to the above configuration, it is possible to reduce the mounting area on the circuit board.

[0009] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. FIG. 2 is a plan view showing the semiconductor device according to the first embodiment. FIG. 3 is a view showing the sealing resin in the plan view of FIG. 2, with the sealing resin indicated by imaginary lines. FIG. 4 is a partially enlarged view of FIG. 3. FIG. 5 is a bottom view showing the semiconductor device according to the first embodiment. FIG. 6 is a front view showing the semiconductor device according to the first embodiment. FIG. 7 is a right side view showing the semiconductor device according to the first embodiment. FIG. 8 is a partially enlarged view of FIG. 7, with the sealing resin indicated by imaginary lines. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3. FIG. 11 is a partially enlarged view of FIG. 9. FIG. 12 is a partially enlarged view of FIG. 9. FIG. 13 is a partially enlarged view of FIG. 9. FIG. 14 is a partially enlarged view of FIG. 10. FIG. 15 is a partially enlarged view of FIG. 3. FIG. 16 is a partially enlarged view of FIG. 3. FIG. 17 is a partially enlarged view of a portion of FIG. 3 . FIG. 18 is a partially enlarged view of a portion of FIG. 3 . FIG. 19 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to the first embodiment. FIG. 20 is a plan view illustrating a semiconductor device according to a first modified example of the first embodiment, in which a sealing resin is indicated by an imaginary line. FIG. 21 is a plan view illustrating a semiconductor device according to a second modified example of the first embodiment, in which the sealing resin is indicated by an imaginary line. FIG. 22 is a plan view illustrating a semiconductor device according to a third modified example of the first embodiment, in which the sealing resin is indicated by an imaginary line. FIG. 23 is a plan view illustrating a semiconductor device according to a fourth modified example of the first embodiment, in which the sealing resin is indicated by an imaginary line. FIG. 24 is a plan view illustrating a semiconductor device according to a fifth modified example of the first embodiment, in which the sealing resin is indicated by an imaginary line. FIG. 25 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to a fifth modified example of the first embodiment. FIG. 26 is a plan view illustrating a semiconductor device according to a sixth modified example of the first embodiment, in which the sealing resin is indicated by an imaginary line. FIG. 27 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to a sixth modified example of the first embodiment. FIG. 28 is a plan view showing a semiconductor device according to a seventh modification of the first embodiment, in which the sealing resin is indicated by imaginary lines.FIG. 29 is a diagram showing an example of a circuit configuration of a semiconductor device according to a seventh modified example of the first embodiment. FIG. 30 is a plan view showing a semiconductor device according to a second embodiment, with the sealing resin shown by imaginary lines. FIG. 31 is a cross-sectional view taken along line XXXI-XXXI in FIG. 30. FIG. 32 is a diagram showing an example of a circuit configuration of a semiconductor device according to the second embodiment. FIG. 33 is a plan view showing a semiconductor device according to a first modified example of the second embodiment, with the sealing resin shown by imaginary lines. FIG. 34 is a cross-sectional view taken along line XXXIV-XXXIV in FIG. 33. FIG. 35 is a plan view showing a semiconductor device according to a second modified example of the second embodiment, with the sealing resin shown by imaginary lines. FIG. 36 is a cross-sectional view taken along line XXXVI-XXXVI in FIG. 35. FIG. 37 is a plan view showing a semiconductor device according to a third modified example of the second embodiment, with the sealing resin shown by imaginary lines. FIG. 38 is a cross-sectional view taken along line XXXVIII-XXXVIII in FIG. 37. FIG. 39 is a plan view showing a semiconductor device according to a fourth modified example of the second embodiment, in which the sealing resin is indicated by imaginary lines. FIG. 40 is a plan view showing a semiconductor device according to a fifth modified example of the second embodiment, in which the sealing resin is indicated by imaginary lines. FIG. 41 is a diagram showing an example of a circuit configuration of a semiconductor device according to a fifth modified example of the second embodiment. FIG. 42 is a plan view showing a semiconductor device according to a sixth modified example of the second embodiment, in which the sealing resin is indicated by imaginary lines. FIG. 43 is a diagram showing an example of a circuit configuration of a semiconductor device according to a sixth modified example of the second embodiment. FIG. 44 is a plan view showing a semiconductor device according to a seventh modified example of the second embodiment, in which the sealing resin is indicated by imaginary lines. FIG. 45 is a diagram showing an example of a circuit configuration of a semiconductor device according to a seventh modified example of the second embodiment. FIG. 46 is a plan view showing a semiconductor device according to the third embodiment, in which the sealing resin is indicated by imaginary lines. FIG. 47 is a plan view showing a semiconductor device according to a modified example of the third embodiment, in which the sealing resin is indicated by imaginary lines. FIG. 48 is a plan view showing a semiconductor device according to the fourth embodiment, in which the sealing resin is indicated by imaginary lines. FIG. 49 is a plan view showing a semiconductor device according to a modification of the fourth embodiment, in which the sealing resin is indicated by imaginary lines.

[0010] Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, identical or similar components will be designated by the same reference numerals, and redundant descriptions will be omitted. Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not intended to necessarily assign any order to their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on (an) object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on (an) object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on (an) object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on (an) object B" includes "a certain object A is in contact with a certain object B and is located on (an) object B" and "a certain object A is located on (an) object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, "when viewed from a certain direction, an object A overlaps an object B" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, "an object A (is made of) a certain material C" includes "an object A (is made of) a certain material C" and "an object A (is made of) a certain material C as its main component."

[0012] 1 to 19 show a semiconductor device A10 according to a first embodiment. The semiconductor device A10 includes a first die pad 10A, a second die pad 10B, a plurality of terminal leads 13, a first semiconductor element 21, a second semiconductor element 22, a first conductive portion 31, a pair of first connecting members 41A and 41B, a pair of second connecting members 42A and 42B, and a sealing resin 50. The plurality of terminal leads 13 include a first terminal lead 14, a second terminal lead 15, a third terminal lead 16, a fourth terminal lead 171, a fifth terminal lead 172, a sixth terminal lead 181, and a seventh terminal lead 182.

[0013] For ease of explanation, the thickness direction of the semiconductor device A10 will be referred to as the "thickness direction z." In the following explanation, one side of the thickness direction z may be referred to as the upper side, and the other side as the lower side. Note that terms such as "upper," "lower," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each component, etc. in the thickness direction z, and do not necessarily define the relationship with the direction of gravity. Furthermore, "plan view" refers to the view in the thickness direction z. The direction perpendicular to the thickness direction z is referred to as the "first direction x." The direction perpendicular to the thickness direction z and the first direction x is referred to as the "second direction y."

[0014] As shown in FIGS. 3 and 9 , the first die pad 10A and the second die pad 10B are spaced apart from each other in the first direction x. The first die pad 10A, the second die pad 10B, and the multiple terminal leads 13 are configured from the same lead frame. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the first die pad 10A, the second die pad 10B, and the multiple terminal leads 13 contain copper. Each of the first die pad 10A and the second die pad 10B is, for example, rectangular in plan view.

[0015] The first die pad 10A and the second die pad 10B each have a main surface 101 and a back surface 102. Unless otherwise specified, the main surface 101 and the back surface 102 described below are common to the first die pad 10A and the second die pad 10B. The main surface 101 faces in the thickness direction z (upward). The main surface 101 is covered with a sealing resin 50. A first semiconductor element 21 is mounted on the main surface 101 of the first die pad 10A. The back surface 102 of the first die pad 10A faces the side opposite to the side on which the first semiconductor element 21 is located in the thickness direction z. A second semiconductor element 22 is mounted on the main surface 101 of the second die pad 10B. The back surface 102 of the second die pad 10B faces the side opposite to the side on which the second semiconductor element 22 is located in the thickness direction z. The back surface 102 is exposed from the sealing resin 50. The rear surface 102 is plated with, for example, tin (Sn).

[0016] As shown in FIGS. 3 and 8 to 10 , the sealing resin 50 covers the first semiconductor element 21, the second semiconductor element 22, the first conductive portion 31, and at least a portion of each of the first die pad 10A and the second die pad 10B. The sealing resin 50 also covers a portion of each of the multiple terminal leads 13. The sealing resin 50 has electrical insulation properties. The sealing resin 50 includes, for example, a black epoxy resin. As shown in FIG. 2 , the dimension L1 of the sealing resin 50 in the first direction x is longer than the dimension L2 of the sealing resin 50 in the second direction y. The sealing resin 50 has a resin main surface 51, a resin back surface 52, a pair of first side surfaces 53, a second side surface 54, a third side surface 55, multiple recesses 56, a groove 57, and multiple recesses 581 and 582.

[0017] 9, the resin main surface 51 faces the same side as the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z. As shown in Fig. 9 and 10, the resin back surface 52 faces the opposite side to the resin main surface 51 in the thickness direction z. As shown in Fig. 5, the back surfaces 102 of the first die pad 10A and the second die pad 10B are exposed from the resin back surface 52.

[0018] 2 , 5 , and 6 , the pair of first side surfaces 53 are spaced apart from each other in the first direction x. The pair of first side surfaces 53 face the first direction x and extend in the second direction y. The pair of first side surfaces 53 are connected to the resin main surface 51 and the resin back surface 52.

[0019] 2, 5, and 7, the second side surface 54 and the third side surface 55 are spaced apart from each other in the second direction y. The second side surface 54 and the third side surface 55 face opposite each other in the second direction y and extend in the first direction x. The second side surface 54 and the third side surface 55 are connected to the resin main surface 51 and the resin back surface 52. As shown in FIG. 6, a plurality of terminal leads 13 are exposed from the third side surface 55.

[0020] 2 , 5 , and 6 , the recesses 56 are recessed from the third side surface 55 in the second direction y, and extend in the thickness direction z from the resin main surface 51 to the resin back surface 52. In the first direction x, the recesses 56 are located individually between the seventh terminal lead 182 and the third terminal lead 16, between the third terminal lead 16 and the first terminal lead 14, between the first terminal lead 14 and the second terminal lead 15, and between the second terminal lead 15 and the sixth terminal lead 181.

[0021] 5 , 6 , 9 , and 10 , the groove 57 is recessed from the resin back surface 52 in the thickness direction z and extends along the second direction y. Both sides of the groove 57 in the second direction y are connected to the second side surface 54 and the third side surface 55. When viewed in the thickness direction z, the groove 57 separates the back surface 102 of the first die pad 10A from the back surface 102 of the second die pad 10B. Note that the sealing resin 50 does not necessarily have to have the groove 57.

[0022] As shown in FIGS. 6 , 7 , 9 , and 10 , each of the multiple recesses 581, 582 is recessed from the resin main surface 51 in the thickness direction z. The shape of each of the multiple recesses 581, 582 in a plan view is not particularly limited, but in the illustrated example, it is circular. Each of the multiple recesses 581 overlaps the first die pad 10A in a plan view. In the illustrated example, the multiple recesses 581 are individually located near the four corners of the first die pad 10A in a plan view. Each of the multiple recesses 582 overlaps the second die pad 10B in a plan view. In the illustrated example, the multiple recesses 582 are individually located near the four corners of the second die pad 10B in a plan view. Each of the multiple recesses 581, 582 does not overlap the first conductive portion 31 in a plan view. Furthermore, in a plan view, each of the multiple recesses 581, 582 does not overlap either the pair of first connection members 41A, 41B or the pair of second connection members 42A, 42B. The multiple recesses 581 are formed by pins for fixing the first die pad 10A during the manufacture of the semiconductor device A10. The pins are pressed against the first die pad 10A to fix the first die pad 10A before the sealing resin 50 is formed. In this state, the formation of the sealing resin 50 begins. The pins are then pulled out before the formation of the sealing resin 50 is completed. As a result, the sealing resin 50 is formed in at least a portion of the area where the pins were located, so that the main surface 101 of the first die pad 10A is covered with the sealing resin 50. The multiple recesses 581 are marks formed during the molding process of the sealing resin 50. Similarly, the multiple recesses 582 are formed by pins for fixing the second die pad 10B during the manufacture of the semiconductor device A10. The recesses 582 are marks formed during the molding process of the sealing resin 50 .

[0023] 1, 2, and 5, the sealing resin 50 further has a plurality of traces 589. The plurality of traces 589 are, for example, traces formed by an ejector pin pressed against the sealing resin 50 to remove the sealing resin 50 from a mold when the sealing resin 50 is formed. Each of the plurality of traces 589 is recessed from either the resin main surface 51 or the resin back surface 52. Note that none of the plurality of traces 589 may be formed on the sealing resin 50. Furthermore, as shown in FIG. 5, the back surface 102 of the first die pad 10A and the back surface 102 of the second die pad 10B each have a trace 109. The trace 109 formed on the first die pad 10A and the trace 109 formed on the second die pad 10B are respectively traces formed by the aforementioned ejector pin. The traces 109 formed on the first die pad 10A are recessed from the back surface 102 of the first die pad 10A, and the traces 109 formed on the second die pad 10B are recessed from the back surface 102 of the second die pad 10B. Note that the traces 109 do not necessarily have to be formed on either the first die pad 10A or the second die pad 10B. The depths of the multiple traces 589 and the multiple traces 109 are, for example, smaller than the depths of the multiple recesses 581, but may be larger or the same.

[0024] 3 and 5 , the first die pad 10A and the second die pad 10B have a first end face 111, a second end face 112, a third end face 113, and a fourth end face 114. The first end face 111, the second end face 112, the third end face 113, and the fourth end face 114 are covered with the sealing resin 50. The first end face 111 faces in the first direction x and extends in the second direction y. The first end face 111 is located closest to the pair of first side faces 53 of the sealing resin 50. The second end face 112 faces in the second direction y and extends in the first direction x. The second end face 112 is located closest to the second side face 54 of the sealing resin 50. The third end face 113 faces the opposite side to the second end face 112 in the second direction y and extends in the first direction x. The third end face 113 is located closest to the third side surface 55 of the sealing resin 50. The fourth end face 114 faces the opposite side to the first end face 111 in the first direction x and extends in the second direction y. As shown in Fig. 9 , a groove portion 57 is located between the fourth end face 114 of the first die pad 10A and the fourth end face 114 of the second die pad 10B.

[0025] As shown in FIGS. 5 and 8, the distance P2 between the third end face 113 and the third side face 55 is longer than the distance P1 between the second end face 112 and the second side face 54.

[0026] 3 , 5 , and 8 , the first die pad 10A and the second die pad 10B have a first corner end surface 121. The first corner end surface 121 is located between the first end surface 111 and the second end surface 112, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The first corner end surface 121 is covered with the sealing resin 50 and is a flat surface inclined with respect to the first end surface 111 and the second end surface 112. Either a first inclination angle α1 of the first corner end surface 121 with respect to the first end surface 111 or a second inclination angle α2 of the first corner end surface 121 with respect to the second end surface 112 shown in FIG. 15 is 60° or more and 85° or less. One of the multiple recesses 581 is located near the first corner end face 121 of the first die pad 10A in a planar view, and one of the multiple recesses 582 is located near the first corner end face 121 of the second die pad 10B in a planar view.

[0027] 15 , a longest normal Nmax of the first corner end face 121 is set. The longest normal Nmax is the maximum value of the normal to the first corner end face 121 that extends from the first corner end face 121 of either the first die pad 10A or the second die pad 10B to the first side face 53 of the pair of first side faces 53 of the sealing resin 50 that is located closest to the first corner end face 121. The longest normal Nmax is 1.0 to 1.5 times the length of an intersection C (see FIG. 15 ) between the first corner end face 121 and an imaginary plane having the first direction x and the second direction y as in-plane directions.

[0028] 3 , 5 , and 8 , the first die pad 10A and the second die pad 10B have a second corner end surface 122. The second corner end surface 122 is located between the first end surface 111 and the third end surface 113, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The second corner end surface 122 is covered with the sealing resin 50 and is a flat surface inclined with respect to the first end surface 111 and the third end surface 113. Either a third inclination angle α3 of the second corner end surface 122 with respect to the first end surface 111 or a fourth inclination angle α4 of the second corner end surface 122 with respect to the third end surface 113 shown in FIG. 16 is 60° or more and 85° or less. One of the multiple recesses 581 is located near the second corner end face 122 of the first die pad 10A in a planar view, and one of the multiple recesses 582 is located near the second corner end face 122 of the second die pad 10B in a planar view.

[0029] 3 and 5 , the first die pad 10A and the second die pad 10B have a third corner end face 123. The third corner end face 123 is located between the second end face 112 and the fourth end face 114, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The third corner end face 123 is covered with the sealing resin 50 and is a flat surface inclined with respect to the second end face 112 and the fourth end face 114. Either a fifth inclination angle α5 of the third corner end face 123 with respect to the fourth end face 114 shown in FIG. 17 or a sixth inclination angle α6 of the third corner end face 123 with respect to the second end face 112 is 60° or more and 85° or less. One of the multiple recesses 581 is located near the third corner end face 123 of the first die pad 10A in a planar view, and one of the multiple recesses 582 is located near the third corner end face 123 of the second die pad 10B in a planar view.

[0030] 3 and 5 , the first die pad 10A and the second die pad 10B have a fourth corner end face 124. The fourth corner end face 124 is located between the third end face 113 and the fourth end face 114, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The fourth corner end face 124 is covered with the sealing resin 50 and is a flat surface inclined with respect to the third end face 113 and the fourth end face 114. Either a seventh inclination angle α7 of the fourth corner end face 124 with respect to the fourth end face 114 shown in FIG. 18 or an eighth inclination angle α8 of the fourth corner end face 124 with respect to the third end face 113 is between 60° and 85°. One of the multiple recesses 581 is located near the fourth corner end face 124 of the first die pad 10A in a planar view, and one of the multiple recesses 582 is located near the fourth corner end face 124 of the second die pad 10B in a planar view.

[0031] 13 , the second die pad 10B has a seating surface 103 and an upstanding surface 104. The seating surface 103 faces the same side as the main surface 101 in the thickness direction z, and is located between the main surface 101 and the back surface 102 in the thickness direction z. The seating surface 103 is connected to the fourth end surface 114. The upstanding surface 104 faces a direction perpendicular to the thickness direction z, and is connected to the seating surface 103 and the main surface 101. The seating surface 103 and the upstanding surface 104 form a step in the second die pad 10B.

[0032] Each of the first semiconductor element 21 and the second semiconductor element 22 is, for example, a transistor. As shown in FIG. 19 , the transistor in the semiconductor device A10 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), but may also be a bipolar transistor, an IGBT (Insulated Gate Bipolar Transistor), or the like. The circuit in FIG. 19 also illustrates a parasitic diode component built into each of the first semiconductor element 21 and the second semiconductor element 22. Each of the first semiconductor element 21 and the second semiconductor element 22 is, for example, an n-channel type, but may also be a p-channel type. Each of the first semiconductor element 21 and the second semiconductor element 22 includes a compound semiconductor substrate. The compound semiconductor substrate contains silicon (Si) or silicon carbide (SiC).

[0033] 3 and 9 , the first semiconductor element 21 is mounted on the first die pad 10A. Preferably, in a plan view, the center of gravity of the first semiconductor element 21 overlaps the center of the first die pad 10A. The center of the first die pad 10A is the center when the first die pad 10A is divided into Nx (Nx is a positive odd number) parts in the first direction x, and is also a region corresponding to the center when the first die pad 10A is divided into Ny (Ny is a positive odd number) parts in the second direction y. Nx and Ny are not limited to any particular value, but may be, for example, 3 or 5.

[0034] The first semiconductor element 21 has a first main surface 21a and a first back surface 21b. The first main surface 21a and the first back surface 21b are spaced apart in the thickness direction z. The first main surface 21a faces the same direction as the main surface 101 of the first die pad 10A. The first back surface 21b faces the opposite side to the first main surface 21a in the thickness direction z and faces the main surface 101 of the first die pad 10A.

[0035] 3 and 9, the first semiconductor element 21 is mounted on the first die pad 10A. As shown in Fig. 11, the first semiconductor element 21 has a first main surface electrode 211, a main surface electrode 212, and a first back surface electrode 213.

[0036] The first principal surface electrode 211 is disposed on the first principal surface 21a. A current corresponding to the power converted by the first semiconductor element 21 flows through the first principal surface electrode 211. In an example in which the first semiconductor element 21 is a MOSFET, the first principal surface electrode 211 is, for example, a source electrode. The first principal surface electrode 211 includes a plurality of metal plating layers. The first principal surface electrode 211 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the first principal surface electrode 211 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0037] The principal surface electrode 212 is disposed on the first principal surface 21 a. A first drive signal (gate voltage) for driving the first semiconductor element 21 is applied to the principal surface electrode 212. In an example in which the first semiconductor element 21 is a MOSFET, the principal surface electrode 212 is, for example, a gate electrode. In a plan view, the area of ​​the principal surface electrode 212 is smaller than the area of ​​the first principal surface electrode 211.

[0038] The first back surface electrode 213 is disposed on the first back surface 21b. The first back surface electrode 213 is provided opposite to the main surface 101 of the first die pad 10A. A current corresponding to the power before being converted by the first semiconductor element 21 flows through the first back surface electrode 213. In an example in which the first semiconductor element 21 is a MOSFET, the first back surface electrode 213 is, for example, a drain electrode.

[0039] The second semiconductor element 22 is mounted on the main surface 101 of the second die pad 10B. Preferably, in a plan view, the center of gravity of the second semiconductor element 22 overlaps with the center of the second die pad 10B. The center of the second die pad 10B is the center when the second die pad 10B is divided into Lx (Lx is a positive odd number) in the first direction x, and is a region corresponding to the center when the second die pad 10B is divided into Ly (Ly is a positive odd number) in the second direction y. Lx and Ly are not limited to any particular value, but may be, for example, 3 or 5.

[0040] The second semiconductor element 22 has a second main surface 22a and a second back surface 22b. The second main surface 22a and the second back surface 22b are spaced apart in the thickness direction z. The second main surface 22a faces the same direction as the main surface 101 of the second die pad 10B. The second back surface 22b faces the opposite side to the second main surface 22a in the thickness direction z and faces the main surface 101 of the second die pad 10B.

[0041] 3 and 9, the second semiconductor element 22 is mounted on the second die pad 10B. As shown in Fig. 12, the second semiconductor element 22 has a second main surface electrode 221, a main surface electrode 222, and a second back surface electrode 223.

[0042] The second principal surface electrode 221 is disposed on the second principal surface 22a. A current corresponding to the power converted by the second semiconductor element 22 flows through the second principal surface electrode 221. In an example in which the second semiconductor element 22 is a MOSFET, the second principal surface electrode 221 is, for example, a source electrode. Like the first principal surface electrode 211, the second principal surface electrode 221 includes multiple metal plating layers. The second principal surface electrode 221 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the second principal surface electrode 221 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0043] The principal surface electrode 222 is disposed on the second principal surface 22 a. A second drive signal (gate voltage) for driving the second semiconductor element 22 is applied to the principal surface electrode 222. In an example in which the second semiconductor element 22 is a MOSFET, the principal surface electrode 222 is, for example, a gate electrode. In a plan view, the area of ​​the principal surface electrode 222 is smaller than the area of ​​the second principal surface electrode 221.

[0044] The second back surface electrode 223 is disposed on the second back surface 22b. The second back surface electrode 223 is provided opposite to the main surface 101 of the second die pad 10B. A current corresponding to the power before being converted by the second semiconductor element 22 flows through the second back surface electrode 223. In an example in which the second semiconductor element 22 is a MOSFET, the second back surface electrode 223 is, for example, a drain electrode.

[0045] The semiconductor device A10 further includes two die bonding layers 231 and 232. Each of the two die bonding layers 231 and 232 is electrically conductive. Each of the die bonding layers 231 and 232 is made of, for example, solder. Alternatively, each of the die bonding layers 231 and 232 may be made of sintered metal.

[0046] 9 and 11 , the die bonding layer 231 is interposed between the main surface 101 of the first die pad 10A and the first back surface electrode 213 of the first semiconductor element 21. The die bonding layer 231 bonds the main surface 101 of the first die pad 10A to the first back surface electrode 213 of the first semiconductor element 21. This establishes electrical conduction between the first back surface electrode 213 of the first semiconductor element 21 and the first die pad 10A.

[0047] 9, 10, and 12, the die bonding layer 232 is interposed between the main surface 101 of the second die pad 10B and the second back surface electrode 223 of the second semiconductor element 22. The die bonding layer 232 bonds the main surface 101 of the second die pad 10B to the second back surface electrode 223 of the second semiconductor element 22. This establishes electrical conduction between the second back surface electrode 223 of the second semiconductor element 22 and the second die pad 10B.

[0048] 3 , the multiple terminal leads 13 are located on the side opposite to the side where the second end surface 112 faces the first die pad 10A and the second die pad 10B in the second direction y. At least one of the multiple terminal leads 13 is electrically connected to either the first semiconductor element 21 or the second semiconductor element 22. The multiple terminal leads 13 are arranged along the first direction x. The multiple terminal leads 13 include a first terminal lead 14, a second terminal lead 15, a third terminal lead 16, a fourth terminal lead 171, a fifth terminal lead 172, a sixth terminal lead 181, and a seventh terminal lead 182.

[0049] As shown in FIG. 3 , the first terminal lead 14 is located away from the first die pad 10A and the second die pad 10B in the second direction y and is located between the second terminal lead 15 and the third terminal lead 16 in the first direction x. The first terminal lead 14 extends along the second direction y. The first terminal lead 14 is electrically connected to the first main surface electrode 211 (source electrode) of the first semiconductor element 21 and the second main surface electrode 221 (source electrode) of the second semiconductor element 22. The first terminal lead 14 includes a covering portion 14A and an exposed portion 14B. As shown in FIG. 10 , the covering portion 14A is covered with the sealing resin 50. As shown in FIGS. 2 , 3 , 5 , and 6 , the exposed portion 14B is connected to the covering portion 14A and exposed from a third side surface 55 of the sealing resin 50. The exposed portion 14B extends in the second direction y away from the first die pad 10A and the second die pad 10B. The surface of the exposed portion 14B is plated with, for example, tin.

[0050] 14 , the covering portion 14A of the first terminal lead 14 has a seating surface 14C and a rising surface 14D. The seating surface 14C faces the same side as the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z, and is located lower in the thickness direction z than the upper surface of the covering portion 14A (the surface facing upward in the thickness direction z). The rising surface 14D faces in a direction perpendicular to the thickness direction z and is connected to the seating surface 14C and the upper surface of the covering portion 14A. The seating surface 14C and the rising surface 14D form a step in the covering portion 14A of the first terminal lead 14. Note that the covering portion 14A does not necessarily have to have either the seating surface 14C or the rising surface 14D.

[0051] As shown in FIG. 3 , the second terminal lead 15 includes a portion extending in the second direction y and is connected to the first die pad 10A. Therefore, the second terminal lead 15 is electrically connected to the first back surface electrode 213 (drain electrode) of the first semiconductor element 21 via the first die pad 10A. The second terminal lead 15 includes a covered portion 15A and an exposed portion 15B. As shown in FIG. 8 , the covered portion 15A is connected to the third end surface 113 of the first die pad 10A and is covered with the sealing resin 50. When viewed in the first direction x, the covered portion 15A is bent. As shown in FIGS. 2 , 3 , 5 , and 6 , the exposed portion 15B is connected to the covered portion 15A and exposed from the third side surface 55 of the sealing resin 50. The exposed portion 15B extends away from the first die pad 10A in the second direction y. The surface of the exposed portion 15B is, for example, tin-plated.

[0052] As shown in FIG. 3 , the third terminal lead 16 includes a portion extending in the second direction y and is connected to the second die pad 10B. Therefore, the third terminal lead 16 is electrically connected to the second back surface electrode 223 (drain electrode) of the second semiconductor element 22 via the second die pad 10B. The third terminal lead 16 includes a covered portion 16A and an exposed portion 16B. The covered portion 16A is connected to the third end surface 113 of the second die pad 10B and is covered with the sealing resin 50. When viewed in the first direction x, the covered portion 16A is bent in the same manner as the covered portion 15A of the second terminal lead 15. As shown in FIGS. 2 , 3 , 5 , and 6 , the exposed portion 16B is connected to the covered portion 16A and exposed from the third side surface 55 of the sealing resin 50. The exposed portion 16B extends away from the second die pad 10B in the second direction y. The surface of the exposed portion 16B is plated with, for example, tin.

[0053] As shown in FIG. 3 , the fourth terminal lead 171 is located away from the first die pad 10A in the second direction y and on one side in the first direction x. As shown in FIG. 3 , the fifth terminal lead 172 is located away from the second die pad 10B in the second direction y and on the other side in the first direction x. The fourth terminal lead 171 is electrically connected to the main surface electrode 212 (gate electrode) of the first semiconductor element 21. A drive signal (gate voltage) for driving the first semiconductor element 21 is applied to the fourth terminal lead 171. The fifth terminal lead 172 is electrically connected to the main surface electrode 222 (gate electrode) of the second semiconductor element 22. A drive signal (gate voltage) for driving the second semiconductor element 22 is applied to the fifth terminal lead 172.

[0054] 3, the fourth terminal lead 171 includes a covered portion 171A and an exposed portion 171B. The covered portion 171A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 5, and 6, the exposed portion 171B is connected to the covered portion 171A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 171B extends in the second direction y away from the first die pad 10A. The surface of the exposed portion 171B is plated with, for example, tin.

[0055] 3, the fifth terminal lead 172 includes a covered portion 172A and an exposed portion 172B. The covered portion 172A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 5, and 6, the exposed portion 172B is connected to the covered portion 172A and is exposed from the sealing resin 50. The exposed portion 172B extends in the second direction y away from the second die pad 10B. The surface of the exposed portion 172B is plated with, for example, tin.

[0056] As shown in FIG. 3 , the sixth terminal lead 181 is located away from the first die pad 10A in the second direction y and is located between the second terminal lead 15 and the fourth terminal lead 171 in the first direction x. As shown in FIG. 3 , the seventh terminal lead 182 is located away from the second die pad 10B in the second direction y and is located between the third terminal lead 16 and the fifth terminal lead 172 in the first direction x. The sixth terminal lead 181 is electrically connected to the first main surface electrode 211 (source electrode) of the first semiconductor element 21. A voltage corresponding to the current flowing through the first main surface electrode 211 of the first semiconductor element 21 is applied to the sixth terminal lead 181. The seventh terminal lead 182 is electrically connected to the second main surface electrode 221 (source electrode) of the second semiconductor element 22. A voltage corresponding to the current flowing through the second main surface electrode 221 (source electrode) of the second semiconductor element 22 is applied to the seventh terminal lead 182.

[0057] 3, the sixth terminal lead 181 includes a covered portion 181A and an exposed portion 181B. The covered portion 181A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 5, and 6, the exposed portion 181B is connected to the covered portion 181A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 181B extends in the second direction y away from the first die pad 10A. The surface of the exposed portion 181B is plated with, for example, tin.

[0058] 3, the seventh terminal lead 182 includes a covered portion 182A and an exposed portion 182B. The covered portion 182A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 5, and 6, the exposed portion 182B is connected to the covered portion 182A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 182B extends in the second direction y away from the second die pad 10B. The surface of the exposed portion 182B is plated with, for example, tin.

[0059] 6, in the semiconductor device A10, the heights h of the exposed portions 14B of the first terminal lead 14, 15B of the second terminal lead 15, and 16B of the third terminal lead 16 are all the same (or approximately the same). Furthermore, the thicknesses of these are all the same (or approximately the same). Therefore, when viewed in the first direction x, at least a portion (exposed portion 14B) of the first terminal lead 14 overlaps with each of the second terminal lead 15 and the third terminal lead 16 (see FIG. 7).

[0060] As shown in FIG. 3 , the first conductive portion 31 electrically connects the first main surface electrode 211 of the first semiconductor element 21, the second main surface electrode 221 of the second semiconductor element 22, and the first terminal lead 14. The first conductive portion 31 is a metal plate. The first conductive portion 31 is a metal clip. The first conductive portion 31 is composed of, for example, copper. The first conductive portion 31 is covered with a sealing resin 50. The first conductive portion 31 includes a first bonding portion 311, a second bonding portion 312, a third bonding portion 313, a first connecting portion 314, and a second connecting portion 315.

[0061] As shown in FIGS. 3 , 4 , 9 , and 11 , the first bonding portion 311 is bonded to the first principal surface electrode 211 of the first semiconductor element 21. The first bonding portion 311 includes two strip-shaped portions 311 a. As shown in FIGS. 3 and 4 , the longitudinal direction of each of the two strip-shaped portions 311 a is the first direction x. The two strip-shaped portions 311 a are arranged parallel to each other in a planar view. Note that the first bonding portion 311 does not have to be separated into two strip-shaped portions 311 a. The area of ​​the first bonding portion 311 in a planar view (the sum of the areas of the two strip-shaped portions 311 a) is, for example, 10% to 100% of the area of ​​the first principal surface electrode 211 in a planar view.

[0062] As shown in FIGS. 3 , 4 , 9 , and 12 , the second bonding portion 312 is bonded to the second principal surface electrode 221 of the second semiconductor element 22. The second bonding portion 312 includes two strip-shaped portions 312 a. As shown in FIGS. 3 and 4 , the longitudinal direction of each of the two strip-shaped portions 312 a is the first direction x. The two strip-shaped portions 312 a are arranged parallel to each other in a plan view. Note that the second bonding portion 312 does not have to be separated into two strip-shaped portions 312 a. The area of ​​the second bonding portion 312 in a plan view (the sum of the areas of the two strip-shaped portions 312 a) is, for example, 10% to 100% of the area of ​​the second principal surface electrode 221 in a plan view.

[0063] As shown in FIGS. 3 , 4 , 10 , and 14 , the third bonding portion 313 is bonded to the covering portion 14A of the first terminal lead 14. The third bonding portion 313 is bonded to the seating surface 14C of the first terminal lead 14. The third bonding portion 313 extends in the first direction x. At least a portion of the third bonding portion 313 is contained in a region defined by the seating surface 14C and the rising surface 14D of the first terminal lead 14. Note that if the seating surface 14C and the rising surface 14D are not formed on the covering portion 14A of the first terminal lead 14, the third bonding portion 313 is bonded to the upper surface of the covering portion 14A (the surface facing upward in the thickness direction z).

[0064] 3, 4, and 9, the first connecting portion 314 is connected to the first bonding portion 311 and the second bonding portion 312. In the semiconductor device A10, the first connecting portion 314 has a strip shape extending in the first direction x in a plan view.

[0065] As shown in FIGS. 4 and 9 , the first connecting portion 314 includes a main body portion 314a and a pair of bent portions 314b and 314c. The main body portion 314a forms a major portion of the first connecting portion 314. The main body portion 314a is strip-shaped in a plan view. The main body portion 314a extends in the first direction x. The main body portion 314a is located higher in the thickness direction z than the first joint portion 311 and the second joint portion 312. The pair of bent portions 314b and 314c are connected to both ends of the main body portion 314a in the first direction x. The pair of bent portions 314b and 314c bend downward in the thickness direction z from the main body portion 314a. The pair of bent portions 314b connects to the first joint portion 311, and the pair of bent portions 314c connects to the second joint portion 312. In the illustrated example, the bent portion 314b is bifurcated and connected to the two strip-shaped portions 311a, respectively. Unlike this example, the bent portion 314b does not have to be bifurcated. In this case, the first joint portion 311 does not have to be separated into the two strip-shaped portions 311a. Similarly, the bent portion 314c is bifurcated and connected to the two strip-shaped portions 312a, respectively. Unlike this example, the bent portion 314c does not have to be bifurcated. In this case, the second joint portion 312 does not have to be separated into the two strip-shaped portions 312a.

[0066] 3, 4, and 10, the second connecting portion 315 is connected to the first connecting portion 314 and the third bonding portion 313. In the semiconductor device A10, the second connecting portion 315 is strip-shaped extending in the second direction y in a plan view. The second connecting portion 315 extends from the first connecting portion 314 in the second direction y and is connected to the third bonding portion 313. In this embodiment, the second connecting portion 315 is connected to the center of the main body portion 314a of the first connecting portion 314 in the first direction x.

[0067] As shown in FIGS. 4 , 10 , and 14 , the second connecting portion 315 includes a main body portion 315a and a bent portion 315b. The main body portion 315a forms the main portion of the second connecting portion 315. The main body portion 315a is strip-shaped in a plan view. The main body portion 315a extends in the second direction y. The main body portion 315a is located above the third joint portion 313 in the thickness direction z. The main body portion 315a is located at the same (or approximately the same) position as the main body portion 314a in the thickness direction z. The bent portion 315b is connected to one end of the main body portion 315a in the second direction y (the side where the third joint portion 313 is located in the second direction y). The bent portion 315b bends downward in the thickness direction z from the main body portion 315a. The bent portion 315b is connected to the third joint portion 313.

[0068] In the present embodiment, the first conductive portion 31 is bent in the thickness direction z by each of the pair of bent portions 314b, 314c and bent portion 315b, but in a different configuration, if the first main surface 21a of the first semiconductor element 21, the second main surface 22a of the second semiconductor element 22, and the upper surface (the surface facing upward in the thickness direction z) of the covering portion 14A of the first terminal lead 14 are all located at the same (or approximately the same) height as one another in the thickness direction z, the first conductive portion 31 does not have to be bent in the thickness direction z. In other words, the first conductive portion 31 may be a flat plate.

[0069] As shown in FIG. 4 , the first conductive portion 31 is T-shaped in a plan view. Furthermore, the first conductive portion 31 is symmetrical about an auxiliary line La in a plan view. The auxiliary line La extends in the second direction y and overlaps the third joint portion 313 in a plan view. Furthermore, the auxiliary line La overlaps the center of the second connecting portion 315 in the first direction x in a plan view, and also overlaps the center of the first connecting portion 314 in the first direction x in a plan view. Furthermore, the center of gravity CG (see FIG. 4 ) of the first conductive portion 31 is located on the first conductive portion 31. That is, the center of gravity CG of the first conductive portion 31 overlaps the first conductive portion 31 in a plan view.

[0070] As shown in FIGS. 11 , 12 , and 14 , the semiconductor device A10 further includes a plurality of bonding layers 33, 34, and 35. Each of the bonding layers 33, 34, and 35 is electrically conductive. The bonding layers 33, 34, and 35 are, for example, solder, but may also be sintered metal. As shown in FIG. 11 , the bonding layer 33 is interposed between the first principal surface electrode 211 of the first semiconductor element 21 and the first bonding portion 311 of the first conductive portion 31. The bonding layer 33 electrically connects the first principal surface electrode 211 and the first bonding portion 311. As shown in FIG. 12 , the bonding layer 34 is interposed between the second principal surface electrode 221 of the second semiconductor element 22 and the second bonding portion 312 of the first conductive portion 31. The bonding layer 34 electrically connects the second principal surface electrode 221 and the second bonding portion 312. 14 , the bonding layer 35 is interposed between the covering portion 14A of the first terminal lead 14 and the third bonding portion 313 of the first conductive portion 31. The bonding layer 35 electrically bonds the covering portion 14A and the third bonding portion 313 together.

[0071] In this embodiment, the thickness t (see FIG. 11 ) of the first bonding portion 311 (each of the pair of strip-shaped portions 311 a) is 0.1 mm or more and is not more than twice the maximum thickness Tmax (see FIG. 11 ) of the bonding layer 33. The maximum thickness Tmax of the bonding layer 33 is greater than the thickness of the first semiconductor element 21. The thickness t (see FIG. 12 ) of the second bonding portion 312 (each of the pair of strip-shaped portions 312 a) is 0.1 mm or more and is not more than twice the maximum thickness Tmax (see FIG. 12 ) of the bonding layer 34. The maximum thickness Tmax of the bonding layer 34 is greater than the thickness of the second semiconductor element 22.

[0072] Each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B is, for example, a bonding wire. Each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B contains gold. Alternatively, each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B may contain copper or aluminum (Al).

[0073] 3, the first connecting member 41A is joined to the main surface electrode 212 of the first semiconductor element 21 and the covering portion 171A of the fourth terminal lead 171. This establishes electrical continuity between the fourth terminal lead 171 and the main surface electrode 212 of the first semiconductor element 21. As shown in FIG. 3, the first connecting member 41B is joined to the main surface electrode 222 of the second semiconductor element 22 and the covering portion 172A of the fifth terminal lead 172. This establishes electrical continuity between the fifth terminal lead 172 and the main surface electrode 222 of the second semiconductor element 22.

[0074] 3, the second connecting member 42A is joined to the first main surface electrode 211 of the first semiconductor element 21 and the covering portion 181A of the sixth terminal lead 181. This establishes electrical continuity between the sixth terminal lead 181 and the first main surface electrode 211 of the first semiconductor element 21. The second connecting member 42B is joined to the second main surface electrode 221 of the second semiconductor element 22 and the covering portion 182A of the seventh terminal lead 182. This establishes electrical continuity between the seventh terminal lead 182 and the second main surface electrode 221 of the second semiconductor element 22.

[0075] 19 , in the semiconductor device A10 configured as described above, the first main surface electrode 211 of the first semiconductor element 21 and the second main surface electrode 221 of the second semiconductor element 22 are electrically connected to each other and are also commonly connected to the first terminal lead 14. In an example in which both the first semiconductor element 21 and the second semiconductor element 22 are MOSFETs, the semiconductor device A10 forms a circuit (a source-common-connected circuit) in which the source electrodes of the two MOSFETs are commonly connected to one terminal (the first terminal lead 14).

[0076] The functions and effects of the semiconductor device A10 according to the first embodiment are as follows.

[0077] The semiconductor device A10 includes a first semiconductor element 21, a second semiconductor element 22, and a sealing resin 50. The sealing resin 50 covers the first semiconductor element 21 and the second semiconductor element 22. According to this configuration, the semiconductor device A10 has two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) packaged in a single sealing resin 50. Therefore, the semiconductor device A10 can reduce the mounting area on a circuit board on which the semiconductor device A10 is mounted.

[0078] In the semiconductor device A10, the first main surface electrode 211 of the first semiconductor element 21 and the second main surface electrode 221 of the second semiconductor element 22 are electrically connected to the first terminal lead 14 inside the sealing resin 50. With this configuration, the first terminal lead 14 serves as a common terminal for the first main surface electrode 211 and the second main surface electrode 221. For example, in a configuration in which the first semiconductor element 21 and the second semiconductor element 22 are each MOSFETs and the first main surface electrode 211 and the second main surface electrode 221 are each source electrodes, the semiconductor device A10 forms a circuit with common sources, and the first terminal lead 14 serves as a common terminal for the sources of the two MOSFETs. In other words, the semiconductor device A10 makes it possible to package a circuit in which two MOSFETs are common sources.

[0079] In the semiconductor device A10, the first conductive portion 31 includes a first bonding portion 311, a second bonding portion 312, and a third bonding portion 313. The first bonding portion 311 is conductively bonded to the first principal surface electrode 211 of the first semiconductor element 21, the second bonding portion 312 is conductively bonded to the second principal surface electrode 221 of the second semiconductor element 22, and the third bonding portion 313 is conductively bonded to the first terminal lead 14 (coating portion 14A). With this configuration, the first principal surface electrode 211, the second principal surface electrode 221, and the first terminal lead 14 can be conductively connected to one another using a single member (first conductive portion 31).

[0080] In the semiconductor device A10, the first conductive portion 31 is symmetrical with respect to an axis (auxiliary line La) extending in the second direction y when viewed in the thickness direction z. The axis (auxiliary line La) overlaps the third joint portion 313. This configuration makes it possible to equalize the conductive distance from the third joint portion 313 (the covering portion 14A of the first terminal lead 14) to the first joint portion 311 (the first principal surface electrode 211 of the first semiconductor element 21) and the conductive distance from the third joint portion 313 (the covering portion 14A of the first terminal lead 14) to the second joint portion 312 (the second principal surface electrode 221 of the second semiconductor element 22).

[0081] In the semiconductor device A10, the center of gravity CG of the first conductive portion 31 overlaps the first conductive portion 31 when viewed in the thickness direction z. This configuration enables the first conductive portion 31 to be transported in a stable posture during manufacturing of the semiconductor device A10. This prevents the first conductive portion 31 from being bonded to the first semiconductor element 21, the second semiconductor element 22, and the first terminal lead 14 in an inclined state, thereby enabling the first conductive portion 31 to be appropriately bonded to the first main surface electrode 211 of the first semiconductor element 21, the second main surface electrode 221 of the second semiconductor element 22, and the covering portion 14A of the first terminal lead 14, respectively.

[0082] In the semiconductor device A10, the first conductive portion 31 includes a first connecting portion 314 and a second connecting portion 315. The first connecting portion 314 extends in the first direction x between the first joint portion 311 and the second joint portion 312 as viewed in the thickness direction z. The second connecting portion 315 extends in the second direction y between the first connecting portion 314 (main body portion 314 a) and the third joint portion 313 as viewed in the thickness direction z. With this configuration, the first conductive portion 31 is T-shaped as viewed in the thickness direction z. This allows the first conductive portion 31 to be line-symmetrical with respect to the axis (extension line La), and allows the center of gravity CG of the first conductive portion 31 to overlap with the first conductive portion 31 as viewed in the thickness direction z.

[0083] In the semiconductor device A10, the sealing resin 50 has multiple recesses 581. Each of the multiple recesses 581 is recessed from the resin main surface 51 in the thickness direction z. The multiple recesses 581 overlap the first die pad 10A in a plan view. As described above, the multiple recesses 581 are marks formed by fixing the first die pad 10A with multiple pins during the manufacturing of the semiconductor device A10. Therefore, since the first die pad 10A is held down with multiple pins during the manufacturing of the semiconductor device A10, it is possible to suppress the first die pad 10A from wobbling during the manufacturing. This prevents a gap from occurring between the back surface 102 of the first die pad 10A and the mold used to form the sealing resin 50, thereby suppressing the occurrence of resin burrs in the sealing resin 50.

[0084] In the semiconductor device A10, the sealing resin 50 has multiple recesses 582. Each of the multiple recesses 582 is recessed from the resin main surface 51 in the thickness direction z. In a plan view, the multiple recesses 582 overlap the second die pad 10B. As described above, the multiple recesses 582 are marks formed by fixing the second die pad 10B with multiple pins during the manufacturing of the semiconductor device A10. Therefore, since the second die pad 10B is held down by the multiple pins during the manufacturing of the semiconductor device A10, it is possible to prevent the second die pad 10B from wobbling during the manufacturing process. This prevents a gap from occurring between the back surface 102 of the second die pad 10B and the mold used to form the sealing resin 50, thereby preventing resin burrs from occurring in the sealing resin 50.

[0085] In the semiconductor device A10, the first conductive portions 31 do not overlap the four corners of the first die pad 10A in a plan view. This configuration allows the pins that secure the first die pad 10A to press the four corners of the first die pad 10A during manufacturing of the semiconductor device A10. In other words, the semiconductor device A10 can suppress oscillation of the first die pad 10A during manufacturing. Similarly, the first conductive portions 31 do not overlap the four corners of the second die pad 10B in a plan view. This configuration allows the pins that secure the second die pad 10B to press the four corners of the second die pad 10B during manufacturing of the semiconductor device A10. In other words, the semiconductor device A10 can suppress oscillation of the second die pad 10B during manufacturing.

[0086] Other embodiments and modifications of the semiconductor device of the present disclosure will be described below. The configurations of the components in each embodiment and each modification can be combined with each other as long as no technical contradiction occurs.

[0087] 20 to 22 show semiconductor devices A11 to A13 according to first to third modified examples of the first embodiment. The semiconductor devices A11 to A13 differ from the semiconductor device A10 in the following respect: the shape of the first conductive portion 31 in plan view is different. In the examples shown in FIGS. 20 to 22 (semiconductor devices A11 to A13), the first conductive portion 31 is not bent in the thickness direction z, but it may be bent in the thickness direction z, as in the semiconductor device A10.

[0088] As shown in FIG. 20 , the first conductive portion 31 of the semiconductor device A11 includes a first bonding portion 311, a second bonding portion 312, a third bonding portion 313, a first connecting portion 314, and a second connecting portion 315, similar to the first conductive portion 31 of the semiconductor device A10. However, in the semiconductor device A11, the first connecting portion 314 does not extend linearly along the first direction x but is bent in a V-shape in plan view. In plan view, the first connecting portion 314 includes a strip-shaped portion extending from the first bonding portion 311 at an angle relative to both the first direction x and the second direction y, and a strip-shaped portion extending from the second bonding portion 312 at an angle relative to both the first direction x and the second direction y. These strip-shaped portions intersect with each other. The second connecting portion 315 extends in the second direction y from the point where the strip-shaped portions of the first connecting portion 314 intersect. With this configuration, the first conductive portion 31 of the semiconductor device A11 has a Y-shape in plan view.

[0089] 21 , the first conductive portion 31 of the semiconductor device A12 includes a first bonding portion 311, a second bonding portion 312, a third bonding portion 313, and a pair of connecting portions 316. One of the pair of connecting portions 316 connects the first bonding portion 311 and the third bonding portion 313. In a plan view, the connecting portion 316 extends linearly from the first bonding portion 311 to the third bonding portion 313. The other of the pair of connecting portions 316 connects the second bonding portion 312 and the third bonding portion 313. In a plan view, the connecting portion 316 extends linearly from the second bonding portion 312 to the third bonding portion 313. Both of the pair of connecting portions 316 extend from the third bonding portion 313. With this configuration, the first conductive portion 31 of the semiconductor device A12 is V-shaped in a plan view.

[0090] 22 , the first conductive portion 31 of the semiconductor device A13 includes a first bonding portion 311, a second bonding portion 312, a third bonding portion 313, a first connecting portion 314, and a second connecting portion 315. However, in the semiconductor device A13, the second connecting portion 315 is connected to the first bonding portion 311 instead of the first connecting portion 314. In other words, the second connecting portion 315 of the semiconductor device A13 connects the first bonding portion 311 and the third bonding portion 313. In this configuration, the second bonding portion 312 and the third bonding portion 313 are electrically connected via the first bonding portion 311.

[0091] Like the semiconductor device A10, each of the semiconductor devices A11 to A13 according to the first to third modifications of the first embodiment has two semiconductor elements (a first semiconductor element 21 and a second semiconductor element 22) packaged in a single sealing resin 50. Therefore, like the semiconductor device A10, each of the semiconductor devices A11 to A13 can reduce the mounting area on the circuit board on which the semiconductor devices A11 to A13 are mounted. In addition, each of the semiconductor devices A11 to A13 has a common configuration with the semiconductor device A10, and therefore achieves the same effects as the semiconductor device A10.

[0092] In each of the semiconductor devices A11 and A12, the first conductive portion 31 is symmetrical with respect to the auxiliary line La. Therefore, similar to the semiconductor device A10, each of the semiconductor devices A11 and A12 can equalize the conductive distance from the third joint portion 313 (the covering portion 14A of the first terminal lead 14) to the first joint portion 311 (the first principal surface electrode 211 of the first semiconductor element 21) and the conductive distance from the third joint portion 313 (the covering portion 14A of the first terminal lead 14) to the second joint portion 312 (the second principal surface electrode 221 of the second semiconductor element 22). Furthermore, in the semiconductor device A11, the center of gravity CG of the first conductive portion 31 overlaps with the first conductive portion 31 when viewed in the thickness direction z. Therefore, during the manufacturing of the semiconductor device A11, the first conductive portion 31 can be transported in a stable position.

[0093] As can be understood from the above semiconductor devices A11 to A13 (first to third variants of the first embodiment), in the semiconductor devices of the present disclosure, the shape of the first conductive portion 31 can be modified as appropriate, as long as it mutually connects the first main surface electrode 211 of the first semiconductor element 21, the second main surface electrode 221 of the second semiconductor element 22, and the first terminal lead 14.

[0094] 23 shows a semiconductor device A14 according to a fourth modification of the first embodiment. The semiconductor device A14 differs from the semiconductor device A10 in the following respect: the first conductive portion 31 of the semiconductor device A14 is divided into multiple portions. In the example shown in FIG. 23, the first conductive portion 31 of the semiconductor device A14 includes a first conductor 31A and a second conductor 31B that are spaced apart from each other.

[0095] As shown in FIG. 23 , the first conductor 31A is bonded to the first main surface electrode 211 of the first semiconductor element 21 and the covering portion 14A of the first terminal lead 14, electrically connecting them. The first conductor 31A includes a bonding portion 317A, a bonding portion 318A, and a linking portion 319A. The bonding portion 317A is bonded to the first main surface electrode 211 of the first semiconductor element 21. In the illustrated example, the bonding portion 317A is divided into two strip-shaped portions 311a, similar to the first bonding portion 311 described above. Unlike this example, the bonding portion 317A does not have to be divided into two portions. The bonding portion 318A is bonded to the covering portion 14A of the first terminal lead 14. The linking portion 319A connects the bonding portion 317A and the bonding portion 318A.

[0096] As shown in FIG. 23 , the second conductor 31B is bonded to the second principal surface electrode 221 of the second semiconductor element 22 and the covering portion 14A of the first terminal lead 14, electrically connecting them. The second conductor 31B includes a bonding portion 317B, a bonding portion 318B, and a linking portion 319B. The bonding portion 317B is bonded to the second principal surface electrode 221 of the second semiconductor element 22. In the illustrated example, the bonding portion 317B is divided into two strip-shaped portions 312a, similar to the second bonding portion 312 described above. Unlike this example, the bonding portion 317B does not have to be divided into two portions. The bonding portion 318B is bonded to the covering portion 14A of the first terminal lead 14. The linking portion 319B connects the bonding portion 317B and the bonding portion 318B.

[0097] Similar to the semiconductor device A10, the semiconductor device A14 according to the fourth modification of the first embodiment has two semiconductor elements (a first semiconductor element 21 and a second semiconductor element 22) packaged in a single sealing resin 50. Therefore, similar to the semiconductor device A10, the semiconductor device A14 can reduce the mounting area on the circuit board on which the semiconductor device A14 is mounted. In addition, the semiconductor device A14 has a common configuration with the semiconductor device A10, and thus achieves the same effects as the semiconductor device A10.

[0098] As can be understood from the above semiconductor device A14 (fourth variant of the first embodiment), in the semiconductor device of the present disclosure, the first conductive portion 31 is not limited to being a single member, but may be configured to include two or more members spaced apart from each other.

[0099] 24 and 25 show a semiconductor device A15 according to a fifth modification of the first embodiment. The semiconductor device A15 differs from the semiconductor device A10 in the following respect: the first semiconductor element 21 of the semiconductor device A15 is a diode rather than a transistor.

[0100] The first semiconductor element 21 of the semiconductor device A15 has a first main surface electrode 211 and a first back surface electrode 213. As shown in Fig. 24, the first semiconductor element 21 of the semiconductor device A11 does not have a main surface electrode 212. As shown in Fig. 25, the first semiconductor element 21 of the semiconductor device A15 is a diode, in which the first main surface electrode 211 is, for example, an anode electrode, and the first back surface electrode 213 is, for example, a cathode electrode.

[0101] As shown in FIG. 24 , the semiconductor device A15 does not include either the first connecting member 41A or the second connecting member 42A. In this configuration, as shown in FIGS. 24 and 25 , the fourth terminal lead 171 and the sixth terminal lead 181 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22, respectively. Therefore, in the semiconductor device A15, the fourth terminal lead 171 and the sixth terminal lead 181 are non-connect terminals. Note that, unlike the example shown in FIGS. 24 and 25 , the semiconductor device A15 may not further include the second connecting member 42B. In this case, the seventh terminal lead 182 is also a non-connect terminal.

[0102] 25 , in the semiconductor device A15, the first main surface electrode 211 (anode electrode) of the first semiconductor element 21 and the second main surface electrode 221 (source electrode) of the second semiconductor element 22 are electrically connected to each other. That is, in the semiconductor device A15, the anode electrode of the diode and the source electrode of the MOSFET are commonly connected to the first terminal lead 14.

[0103] 26 and 27 show a semiconductor device A16 according to a sixth modification of the first embodiment. The semiconductor device A16 differs from the semiconductor device A10 in the following respect: the second semiconductor element 22 of the semiconductor device A12 is a diode rather than a transistor.

[0104] The second semiconductor element 22 of the semiconductor device A16 has a second main surface electrode 221 and a second back surface electrode 223. As shown in Fig. 26, the second semiconductor element 22 of the semiconductor device A16 does not have a main surface electrode 222. As shown in Fig. 27, the second semiconductor element 22 of the semiconductor device A16 is a diode, in which the second main surface electrode 221 is, for example, an anode electrode, and the second back surface electrode 223 is, for example, a cathode electrode.

[0105] As shown in FIG. 26 , the semiconductor device A16 does not include either the first connecting member 41B or the second connecting member 42B. In this configuration, as shown in FIGS. 26 and 27 , the fifth terminal lead 172 and the seventh terminal lead 182 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22, respectively. Therefore, in the semiconductor device A16, the fifth terminal lead 172 and the seventh terminal lead 182 are non-connect terminals. Note that, unlike the examples shown in FIGS. 26 and 27 , the semiconductor device A16 may not further include the second connecting member 42A. In this case, the sixth terminal lead 181 also serves as a non-connect terminal.

[0106] 27 , in the semiconductor device A16, the first main surface electrode 211 (source electrode) of the first semiconductor element 21 and the second main surface electrode 221 (anode electrode) of the second semiconductor element 22 are electrically connected. In other words, the semiconductor device A16 has a circuit configuration in which the source electrode of the MOSFET and the anode electrode of the diode are commonly connected to the first terminal lead 14.

[0107] 28 and 29 show a semiconductor device A17 according to a seventh modification of the first embodiment. The semiconductor device A17 differs from the semiconductor device A10 in the following respect: each of the first semiconductor element 21 and the second semiconductor element 22 of the semiconductor device A17 is a diode rather than a transistor.

[0108] The first semiconductor element 21 of the semiconductor device A17 has a first main surface electrode 211 and a first back surface electrode 213. As shown in FIG. 28 , the first semiconductor element 21 of the semiconductor device A17 does not have a main surface electrode 212. As shown in FIG. 29 , the first semiconductor element 21 of the semiconductor device A17 is a diode, with the first main surface electrode 211 being an anode electrode and the first back surface electrode 213 being a cathode electrode. The second semiconductor element 22 of the semiconductor device A17 has a second main surface electrode 221 and a second back surface electrode 223. As shown in FIG. 28 , the second semiconductor element 22 of the semiconductor device A17 does not have a main surface electrode 222. As shown in FIG. 29 , the second semiconductor element 22 of the semiconductor device A17 is a diode, with the second main surface electrode 221 being an anode electrode and the second back surface electrode 223 being a cathode electrode.

[0109] 28 , semiconductor device A17 does not include a pair of first connecting members 41A, 41B or a pair of second connecting members 42A, 42B. In this configuration, as shown in FIGS. 28 and 29 , fourth terminal lead 171, fifth terminal lead 172, sixth terminal lead 181, and seventh terminal lead 182 are not electrically connected to either first semiconductor element 21 or second semiconductor element 22. Therefore, in semiconductor device A17, fourth terminal lead 171, fifth terminal lead 172, sixth terminal lead 181, and seventh terminal lead 182 are non-connect terminals.

[0110] 29 , in the semiconductor device A17, the first main surface electrode 211 (anode electrode) of the first semiconductor element 21 and the second main surface electrode 221 (anode electrode) of the second semiconductor element 22 are electrically connected to each other. In other words, the semiconductor device A17 has a circuit configuration in which the anode electrodes of the two diodes are commonly connected to the first terminal lead 14.

[0111] Like the semiconductor device A10, each of the semiconductor devices A15 to A17 according to the fifth to seventh modifications of the first embodiment has two semiconductor elements (a first semiconductor element 21 and a second semiconductor element 22) packaged in a single sealing resin 50. Therefore, like the semiconductor device A10, each of the semiconductor devices A15 to A17 can reduce the mounting area on the circuit board on which the semiconductor devices A15 to A17 are mounted. Additionally, each of the semiconductor devices A15 to A17 has a common configuration with the semiconductor device A10, and therefore achieves the same effects as the semiconductor device A10.

[0112] As can be seen from the semiconductor devices A10, A15 to A17, the semiconductor device of the present disclosure can be configured into three types of circuits (a circuit in which the source electrodes of two MOSFETs are commonly connected, a circuit in which the source electrode of a MOSFET and the anode electrode of a diode are commonly connected, and a circuit in which the anode electrodes of two diodes are commonly connected) by combining the first semiconductor element 21 and the second semiconductor element 22. Meanwhile, the configurations of the terminal leads 13 and the sealing resin 50 are common to the semiconductor devices A10, A15 to A17. Therefore, the semiconductor device of the present disclosure can be configured into any of the three types of circuits while maintaining the same package appearance. Furthermore, the semiconductor device of the present disclosure can utilize the configurations of the terminal leads 13 and the sealing resin 50 as they are, even if the first semiconductor element 21 and the second semiconductor element 22 are transistors or diodes. This allows the semiconductor device of the present disclosure to share a common package structure regardless of the three types of circuits described above, which is advantageous in terms of improving productivity.

[0113] As can be seen from the above semiconductor devices A10 to A17, the semiconductor device of the present disclosure is arranged such that the center of gravity of the first semiconductor element 21 overlaps the center of the first die pad 10A in a plan view. Also, the center of gravity of the second semiconductor element 22 overlaps the center of the second die pad 10B. This configuration is preferable in terms of sharing the first conductive portion 31.

[0114] 30 to 32 show a semiconductor device A20 according to the second embodiment. The semiconductor device A20 differs from the semiconductor device A10 in the following respect: the semiconductor device A20 further includes a second conductive portion 32.

[0115] As shown in FIGS. 30 and 31 , the second conductive portion 32 is bonded to the first die pad 10A and the second die pad 10B. The second conductive portion 32 is a metal plate. The second conductive portion 32 is a metal clip. The second conductive portion 32 includes, for example, copper. The first die pad 10A and the second die pad 10B are electrically connected to each other via the second conductive portion 32. With this configuration, the first back surface electrode 213 and the second back surface electrode 223 are electrically connected to each other via the first die pad 10A, the second conductive portion 32, and the second die pad 10B. The second conductive portion 32 is covered with a sealing resin 50. In the illustrated example, the second conductive portion 32 is strip-shaped in a plan view. The second conductive portion 32 includes a fourth bonding portion 321, a fifth bonding portion 322, and a third connecting portion 323. In the example shown in FIGS. 30 and 31, the second die pad 10B does not have either the seating surface 103 or the standing surface 104, but may have these.

[0116] As shown in FIGS. 30 and 31 , the fourth bonding portion 321 is bonded to the main surface 101 of the first die pad 10A. The main surface 101 of the first die pad 10A is an example of a "first mounting surface" as defined in the claims. As shown in FIGS. 30 and 31 , the fifth bonding portion 322 is bonded to the main surface 101 of the second die pad 10B. The main surface 101 of the second die pad 10B is an example of a "second mounting surface" as defined in the claims. As shown in FIGS. 30 and 31 , the third connecting portion 323 connects the fourth bonding portion 321 and the fifth bonding portion 322. The third connecting portion 323 extends along the first direction x.

[0117] As shown in FIGS. 30 and 31 , the semiconductor device A20 further includes two bonding layers 36 and 37. Each of the two bonding layers 36 and 37 is electrically conductive. The two bonding layers 36 and 37 are made of, for example, solder, but may also be made of sintered metal. As shown in FIG. 31 , the bonding layer 36 is interposed between the first die pad 10A and the fourth bonding portion 321 of the second conductive portion 32. The bonding layer 36 electrically connects the first die pad 10A to the fourth bonding portion 321 of the second conductive portion 32. As shown in FIG. 31 , the bonding layer 37 is interposed between the second die pad 10B and the fifth bonding portion 322 of the second conductive portion 32. The bonding layer 37 electrically connects the second die pad 10B to the fifth bonding portion 322 of the second conductive portion 32.

[0118] In the semiconductor device A20 configured as described above, as shown in FIG. 32 , the first principal surface electrode 211 of the first semiconductor element 21 and the second principal surface electrode 221 of the second semiconductor element 22 are electrically connected to each other, similar to the semiconductor device A10. In an example where both the first semiconductor element 21 and the second semiconductor element 22 are MOSFETs, the semiconductor device A20 forms a circuit in which the source electrodes of the two MOSFETs are commonly connected (a source-common-connected circuit). Also, in the semiconductor device A20, as shown in FIG. 32 , the first back surface electrode 213 of the first semiconductor element 21 and the second back surface electrode 223 of the second semiconductor element 22 are electrically connected to each other. In an example where both the first semiconductor element 21 and the second semiconductor element 22 are MOSFETs, the semiconductor device A20 forms a circuit in which the drain electrodes of the two MOSFETs are commonly connected. Therefore, as shown in FIG. 32 , the semiconductor device A20 forms a circuit in which the first semiconductor element 21 and the second semiconductor element 22 (two MOSFETs) are connected in parallel.

[0119] In the semiconductor device A20, similar to the semiconductor device A10, two semiconductor elements (a first semiconductor element 21 and a second semiconductor element 22) are packaged in a single sealing resin 50. Therefore, similar to the semiconductor device A10, the semiconductor device A20 can reduce the mounting area on the circuit board on which the semiconductor device A20 is mounted. In addition, the semiconductor device A20 has a common configuration with the semiconductor device A10, and therefore achieves the same effects as the semiconductor device A10.

[0120] In the semiconductor device A20, the first die pad 10A and the second die pad 10B are electrically connected by the second conductive portion 32. With this configuration, the first back surface electrode 213 of the first semiconductor element 21 and the second back surface electrode 223 of the second semiconductor element 22 are electrically connected to each other. For example, in a configuration in which the first semiconductor element 21 and the second semiconductor element 22 are each MOSFETs and the first back surface electrode 213 and the second back surface electrode 223 are each drain electrodes, the semiconductor device A20 forms a circuit in which the drain electrodes of the two MOSFETs are commonly connected. In other words, the semiconductor device A20 makes it possible to package a circuit in which the drain electrodes of two MOSFETs are commonly connected. In particular, the semiconductor device A20, like the semiconductor device A10, further has the first main surface electrode 211 and the second main surface electrode 221 electrically connected. Therefore, the semiconductor device A20 makes it possible to package a circuit in which the first semiconductor element 21 and the second semiconductor element 22 are connected in parallel.

[0121] 33 and 34 show a semiconductor device A21 according to a first modified example of the second embodiment. The semiconductor device A21 differs from the semiconductor device A20 in the following respect. The first die pad 10A has a seating surface 103 and a standing surface 104, similar to the second die pad 10B. The seating surface 103 and the standing surface 104 of the first die pad 10A are configured similarly to the seating surface 103 and the standing surface 104, respectively, of the second die pad 10B.

[0122] In the semiconductor device A21, the fourth bonding portion 321 of the second conductive portion 32 is bonded to the seating surface 103 of the first die pad 10A via the bonding layer 36. At least a portion of the fourth bonding portion 321 is contained in the area defined by the seating surface 103 and the standing surface 104 of the first die pad 10A. Also, in the semiconductor device A21, the fifth bonding portion 322 of the second conductive portion 32 is bonded to the seating surface 103 of the second die pad 10B via the bonding layer 37. At least a portion of the fifth bonding portion 322 is contained in the area defined by the seating surface 103 and the standing surface 104 of the second die pad 10B.

[0123] 35 and 36 show a semiconductor device A22 according to a second modification of the second embodiment. The semiconductor device A22 differs from the semiconductor device A20 in the following respect: the position of the second conductive portion 32 is different.

[0124] In the semiconductor device A22, the second conductive portion 32 overlaps the first conductive portion 31 (first connecting portion 314) in a plan view. As described above, in the first connecting portion 314 of the first conductive portion 31, the pair of bent portions 314b, 314c causes the first connecting portion 314 (main body portion 314a) to be positioned higher in the thickness direction z than the first bonding portion 311 and the second bonding portion 312. This increases the distance between the main body portion 314a and the main surface 101 of the first die pad 10A and the main surface 101 of the second die pad 10B. This increased distance allows the second conductive portion 32 to be positioned below the first conductive portion 31 in the thickness direction z. Furthermore, in the semiconductor device A22, the second conductive portion 32 overlaps the line segment connecting the first semiconductor element 21 and the second semiconductor element 22 in a plan view. By adopting this configuration, the semiconductor device A22 has a shorter conductive path between the first back surface electrode 213 of the first semiconductor element 21 and the second back surface electrode 223 of the second semiconductor element 22 than the semiconductor device A20, thereby reducing the parasitic resistance and parasitic inductance between the first back surface electrode 213 and the second back surface electrode 223.

[0125] 37 and 38 show a semiconductor device A23 according to a third modified example of the second embodiment. The semiconductor device A23 differs from the semiconductor device A20 in the following respect: the second conductive portion 32 of the semiconductor device A23 is disposed below the first die pad 10A and the second die pad 10B in the thickness direction z.

[0126] 38 , in the semiconductor device A23, the second conductive portion 32 is bonded to the back surface 102 of the first die pad 10A by a bonding layer 36, and is also bonded to the back surface 102 of the second die pad 10B by a bonding layer 37. In the illustrated example, the second conductive portion 32 is larger than the first die pad 10A and the second die pad 10B in plan view. In plan view, the entire first die pad 10A and the entire second die pad 10B each overlap the second conductive portion 32. The lower surface of the second conductive portion 32 (the surface facing downward in the thickness direction z) is exposed from the sealing resin 50 (resin back surface 52). Alternatively, the lower surface of the second conductive portion 32 may be covered by the sealing resin 50. Alternatively, an insulating member (insulating plate or insulating sheet) may be provided on the lower surface of the second conductive portion 32.

[0127] Like the semiconductor device A20, each of the semiconductor devices A21 to A23 according to the first to third modifications of the second embodiment has two semiconductor elements (a first semiconductor element 21 and a second semiconductor element 22) packaged in a single sealing resin 50. Therefore, like the semiconductor device A20, each of the semiconductor devices A21 to A23 can reduce the mounting area on the circuit board on which the semiconductor devices A21 to A23 are mounted. In addition, each of the semiconductor devices A21 to A23 has a common configuration with the semiconductor device A20, and therefore achieves the same effects as the semiconductor device A20.

[0128] 39 shows a semiconductor device A24 according to a fourth modification of the second embodiment. The semiconductor device A24 differs from the semiconductor device A20 in the following respect: the shape of the first conductive portion 31 in plan view is different.

[0129] In the semiconductor device A24, the first conductive portion 31 has a V-shape in plan view, similar to the first conductive portion 31 of the semiconductor device A14. Note that the first conductive portion 31 of the semiconductor device A24 is configured similarly to the first conductive portion 31 of the semiconductor device A14, but, unlike this example, it may also be configured similarly to the first conductive portion 31 of the semiconductor device A11 or the semiconductor device A13.

[0130] Furthermore, in the semiconductor device A24, similarly to the semiconductor device A22, the second conductive portion 32 overlaps, in a plan view, with the line segment connecting the first semiconductor element 21 and the second semiconductor element 22. That is, in the semiconductor device A24, the distance of the conductive path between the first back surface electrode 213 of the first semiconductor element 21 and the second back surface electrode 223 of the second semiconductor element 22 is shorter than in the semiconductor device A20.

[0131] Similar to the semiconductor device A20, the semiconductor device A24 according to the fourth modification of the second embodiment has two semiconductor elements (a first semiconductor element 21 and a second semiconductor element 22) packaged in a single sealing resin 50. Therefore, similar to the semiconductor device A20, the semiconductor device A24 can reduce the mounting area on the circuit board on which the semiconductor device A24 is mounted. In addition, the semiconductor device A24 has a common configuration with the semiconductor device A20, and thus achieves the same effects as the semiconductor device A20.

[0132] 40 and 41 show a semiconductor device A25 according to a fifth modification of the second embodiment. The semiconductor device A25 differs from the semiconductor device A20 in the following respect: the first semiconductor element 21 of the semiconductor device A25 is not a transistor but a diode, similar to the semiconductor device A15.

[0133] In the semiconductor device A25, the first main surface electrode 211 (anode electrode) of the first semiconductor element 21 and the second main surface electrode 221 (source electrode) of the second semiconductor element 22 are electrically connected via a first conductive portion 31. Furthermore, the first back surface electrode 213 (cathode electrode) of the first semiconductor element 21 and the second back surface electrode 223 (drain electrode) of the second semiconductor element 22 are electrically connected via a second conductive portion 32. That is, in the semiconductor device A25, a MOSFET and a diode are connected in parallel, as shown in FIG.

[0134] 42 and 43 show a semiconductor device A26 according to a sixth modified example of the second embodiment. The semiconductor device A26 differs from the semiconductor device A20 in the following respect: the second semiconductor element 22 of the semiconductor device A26 is not a transistor but a diode, similar to the semiconductor device A16.

[0135] In the semiconductor device A26, the first main surface electrode 211 (source electrode) of the first semiconductor element 21 and the second main surface electrode 221 (anode electrode) of the second semiconductor element 22 are electrically connected via a first conductive portion 31. Furthermore, the first back surface electrode 213 (drain electrode) of the first semiconductor element 21 and the second back surface electrode 223 (cathode electrode) of the second semiconductor element 22 are electrically connected via a second conductive portion 32. That is, in the semiconductor device A26, a MOSFET and a diode are connected in parallel, as shown in FIG.

[0136] 44 and 45 show a semiconductor device A27 according to a seventh modification of the second embodiment. The semiconductor device A27 differs from the semiconductor device A20 in the following respect: the first semiconductor element 21 and the second semiconductor element 22 of the semiconductor device A27 are not transistors but diodes similar to the semiconductor device A17.

[0137] In the semiconductor device A27, the first main surface electrode 211 (anode electrode) of the first semiconductor element 21 and the second main surface electrode 221 (anode electrode) of the second semiconductor element 22 are electrically connected via a first conductive portion 31. Furthermore, the first back surface electrode 213 (cathode electrode) of the first semiconductor element 21 and the second back surface electrode 223 (cathode electrode) of the second semiconductor element 22 are electrically connected via a second conductive portion 32. That is, in the semiconductor device A27, two diodes are connected in parallel, as shown in FIG.

[0138] Like the semiconductor device A20, each of the semiconductor devices A25 to A27 according to the fifth to seventh modifications of the second embodiment has two semiconductor elements (a first semiconductor element 21 and a second semiconductor element 22) packaged in a single sealing resin 50. Therefore, like the semiconductor device A10, each of the semiconductor devices A25 to A27 can reduce the mounting area on the circuit board on which the semiconductor devices A25 to A27 are mounted. Additionally, each of the semiconductor devices A25 to A27 has a common configuration with the semiconductor device A20, and therefore achieves the same effects as the semiconductor device A20.

[0139] As can be seen from the semiconductor devices A20, A25 to A27, the semiconductor device of the present disclosure can be configured with three types of circuits (a parallel circuit of two transistors, a parallel circuit of a transistor and a diode, and a parallel circuit of two diodes) by combining the first semiconductor element 21 and the second semiconductor element 22. Meanwhile, the configurations of the terminal leads 13 and the sealing resin 50 are common to the semiconductor devices A20, A25 to A27. Therefore, the semiconductor device of the present disclosure can configure any of the three types of circuits while maintaining the same package appearance. Furthermore, the semiconductor device of the present disclosure can utilize the same configurations of the terminal leads 13 and the sealing resin 50 even if the first semiconductor element 21 and the second semiconductor element 22 are transistors or diodes. This allows the semiconductor device of the present disclosure to share a common package structure regardless of the three types of circuits described above, which is advantageous in terms of improving productivity.

[0140] 46 shows a semiconductor device A30 according to the third embodiment. The semiconductor device A30 differs from the semiconductor device A10 in the following respects: the planar size of the first semiconductor element 21 of the semiconductor device A30 is smaller than the planar size of the first semiconductor element 21 of the semiconductor device A10; and the planar size of the second semiconductor element 22 of the semiconductor device A30 is smaller than the planar size of the second semiconductor element 22 of the semiconductor device A10.

[0141] In the semiconductor device A30, the size of the first semiconductor element 21 in a plan view is reduced compared to the semiconductor device A10, and therefore the size of the first bonding portion 311 of the first conductive portion 31 in a plan view is reduced. Note that, in the semiconductor device A30, as in the semiconductor device A10, the area of ​​the first bonding portion 311 in a plan view (the sum of the areas of the two strip-shaped portions 311a) is, for example, 10% to 100% of the area of ​​the first principal surface electrode 211 in a plan view. Similarly, in the semiconductor device A30, the size of the second semiconductor element 22 in a plan view is reduced compared to the semiconductor device A10, and therefore the size of the second bonding portion 312 of the first conductive portion 31 in a plan view is reduced. Note that, in the semiconductor device A30, as in the semiconductor device A10, the area of ​​the second bonding portion 312 in a plan view (the sum of the areas of the two strip-shaped portions 312a) is, for example, 10% to 100% of the area of ​​the second principal surface electrode 221 in a plan view. On the other hand, the width of the first coupling portion 314 of the first conductive portion 31 is the same as that of the semiconductor device A10.

[0142] 47 shows a semiconductor device A31 according to a modification of the third embodiment. The semiconductor device A31 differs from the semiconductor device A10 in the following respects: the planar size of the first semiconductor element 21 of the semiconductor device A31 is larger than the planar size of the first semiconductor element 21 of the semiconductor device A10. Also, the planar size of the second semiconductor element 22 of the semiconductor device A31 is larger than the planar size of the second semiconductor element 22 of the semiconductor device A10.

[0143] In the semiconductor device A31, the planar size of the first semiconductor element 21 is increased compared to the semiconductor device A10, and therefore the planar size of the first bonding portion 311 of the first conductive portion 31 is increased. Note that, in the semiconductor device A31, as in the semiconductor device A10, the area of ​​the first bonding portion 311 in a planar view (the sum of the areas of the two strip-shaped portions 311a) is, for example, 10% to 100% of the area of ​​the first principal surface electrode 211 in a planar view. Similarly, in the semiconductor device A31, the planar size of the second semiconductor element 22 is increased compared to the semiconductor device A10, and therefore the planar size of the second bonding portion 312 of the first conductive portion 31 is increased. Note that, in the semiconductor device A31, as in the semiconductor device A10, the area of ​​the second bonding portion 312 in a planar view (the sum of the areas of the two strip-shaped portions 312a) is, for example, 10% to 100% of the area of ​​the second principal surface electrode 221 in a planar view. On the other hand, the width of the first coupling portion 314 of the first conductive portion 31 is the same as that of the semiconductor device A10.

[0144] Like the semiconductor device A10, each of the semiconductor devices A30 and A31 according to the third embodiment and its modifications has two semiconductor elements (a first semiconductor element 21 and a second semiconductor element 22) packaged in a single sealing resin 50. Therefore, like the semiconductor device A10, each of the semiconductor devices A30 and A31 can reduce the mounting area on the circuit board on which the semiconductor devices A30 and A31 are mounted. In addition, each of the semiconductor devices A30 and A31 has a common configuration with the semiconductor device A10, and therefore achieves the same effects as the semiconductor device A10.

[0145] As can be seen from the above semiconductor devices A10, A30, and A31, in the semiconductor device of the present disclosure, the area of ​​the first bonding portion 311 in a plan view (the sum of the areas of the two strip portions 311a) is, for example, 10% to 100% of the area of ​​the first principal surface electrode 211 in a plan view. This configuration allows the size of the first bonding portion 311 in a plan view to be appropriately sized in accordance with the size of the first semiconductor element 21 in a plan view. Similarly, in the semiconductor device of the present disclosure, the area of ​​the second bonding portion 312 in a plan view (the sum of the areas of the two strip portions 312a) is, for example, 10% to 100% of the area of ​​the second principal surface electrode 221 in a plan view. This configuration allows the size of the second bonding portion 312 in a plan view to be appropriately sized in accordance with the size of the second semiconductor element 22 in a plan view.

[0146] As can be seen from the semiconductor devices A10, A30, and A31 described above, in the semiconductor devices disclosed herein, even if the first semiconductor element 21 and the second semiconductor element 22 have different planar sizes, the first connecting portion 314 of the first conductive portion 31 has the same width. During the manufacture of the semiconductor devices A30 and A31, the first conductive portion 31 may be clamped by a transport hand or the like to transport the first conductive portion 31. In this case, if the first connecting portion 314 is clamped in the width direction of the first connecting portion 314, adjustment of the transport hand or the like is not required. Therefore, even if the first semiconductor element 21 and the second semiconductor element 22 have different planar sizes, a common transport device such as a transport hand can be used, which is advantageous in terms of improving productivity.

[0147] In the above semiconductor devices A30 and A31, examples are shown in which the planar sizes of the first semiconductor element 21 and the second semiconductor element 22 are different in the semiconductor device A10, but in the semiconductor device A20, the planar sizes of the first semiconductor element 21 and the second semiconductor element 22 may also be changed in a similar manner.

[0148] Fig. 48 shows a semiconductor device A40 according to the fourth embodiment. The semiconductor device A40 differs from the semiconductor device A10 in the following respect: the semiconductor device A40 includes a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22. In the example shown in Fig. 48, the semiconductor device A40 includes two first semiconductor elements 21 and two second semiconductor elements 22, but the number of each of the first semiconductor elements 21 and the second semiconductor elements 22 may be three or more.

[0149] Each of the two first semiconductor elements 21 is mounted on the first die pad 10A. Each of the two first semiconductor elements 21 is, for example, a transistor. The two first semiconductor elements 21 are aligned along the second direction y. In the semiconductor device A30, the centers of gravity (composite center of gravity) of the two first semiconductor elements 21 overlap with the center of the first die pad 10A in a planar view. In the example shown in FIG. 48 , the two first semiconductor elements 21 have the same size in a planar view, but may be different from each other.

[0150] Each of the two second semiconductor elements 22 is mounted on the second die pad 10B. Each of the two second semiconductor elements 22 is, for example, a transistor. The two second semiconductor elements 22 are aligned along the second direction y. In the semiconductor device A30, the centers of gravity (composite center of gravity) of the two second semiconductor elements 22 overlap with the center of the second die pad 10B in a planar view. In the example shown in FIG. 48 , the two second semiconductor elements 22 have the same size in a planar view, but may be different from each other.

[0151] The semiconductor device A40 includes two first semiconductor elements 21 and two second semiconductor elements 22, and therefore differs from the semiconductor device A10 in the following respects. First, the first conductive portion 31 of the semiconductor device A30 includes two first bonding portions 311, two second bonding portions 312, a third bonding portion 313, two first coupling portions 314, and two second coupling portions 315. Second, the first connecting member 41A of the semiconductor device A40 is bonded to the main surface electrode 212 of one first semiconductor element 21, the main surface electrode 212 of the other first semiconductor element 21, and the covering portion 171A of the fourth terminal lead 171. The first connecting member 41A is bonded, for example by stitch bonding, to the main surface electrode 212 of the first semiconductor element 21 that is closer to the multiple terminal leads 13 in the second direction y, of the two first semiconductor elements 21. Third, the second connection member 42A of the semiconductor device A40 is joined to the first main surface electrode 211 of one first semiconductor element 21, the first main surface electrode 211 of the other first semiconductor element 21, and the covering portion 181A of the sixth terminal lead 181. The second connection member 42A is joined, for example by stitch joining, to the first main surface electrode 211 of the first semiconductor element 21 of the two first semiconductor elements 21 that is closer to the multiple terminal leads 13 in the second direction y. Note that in the semiconductor device A40, the first connection member 41A is formed first compared to the second connection member 42A, but the second connection member 42A may also be formed first. Fourth, the first connection member 41B of the semiconductor device A40 is joined to the main surface electrode 222 of the other second semiconductor element 22, the main surface electrode 222 of the other second semiconductor element 22, and the covering portion 172A of the fifth terminal lead 172. The first connection member 41B is joined, for example, by stitch joining, to the main surface electrode 222 of the second semiconductor element 22 of the two second semiconductor elements 22 that is closer to the multiple terminal leads 13 in the second direction y. Fifth, the second connection member 42B of the semiconductor device A40 is joined to the second main surface electrode 221 of one second semiconductor element 22, the second main surface electrode 221 of the other second semiconductor element 22, and the covering portion 182A of the seventh terminal lead 182.The second connection member 42B is joined, for example by stitch joining, to the second main surface electrode 221 of the second semiconductor element 22 that is closer to the multiple terminal leads 13 in the second direction y, of the two second semiconductor elements 22. Note that in the semiconductor device A40, the first connection member 41B is formed first of the first connection member 41B and the second connection member 42B, but conversely, the second connection member 42B may be formed first.

[0152] As described above, the first conductive portion 31 of the semiconductor device A40 includes, as shown in FIG. 40 , two first bonding portions 311, two second bonding portions 312, a third bonding portion 313, two first connecting portions 314, and two second connecting portions 315. The two first bonding portions 311 are individually bonded to the first main surface electrodes 211 of the two first semiconductor elements 21. The two second bonding portions 312 are individually bonded to the second main surface electrodes 221 of the two second semiconductor elements 22. One of the two first connecting portions 314 is connected to one of the two first bonding portions 311 and one of the two second bonding portions 312. The other of the two first connecting portions 314 is connected to the other of the two first bonding portions 311 and the other of the two second bonding portions 312. One of the two second connecting portions 315 is connected to each of the two first connecting portions 314. The other of the two second connecting portions 315 is connected to one of the two first connecting portions 314 and the third joint portion 313.

[0153] 48 , the semiconductor device A40 may be configured as follows: the semiconductor device A40 may include two first connection members 41A, one of which is bonded to the main surface electrode 212 of one first semiconductor element 21 and the covering portion 171A of the fourth terminal lead 171, and the other first connection member 41A is bonded to the main surface electrode 212 of the other first semiconductor element 21 and the covering portion 171A of the fourth terminal lead 171. Similarly, the semiconductor device A40 may include two second connection members 42A, one of which is bonded to the first main surface electrode 211 of one first semiconductor element 21 and the covering portion 181A of the sixth terminal lead 181, and the other second connection member 42A is bonded to the first main surface electrode 211 of the other first semiconductor element 21 and the covering portion 181A of the sixth terminal lead 181. Alternatively, the semiconductor device A40 may include two first connection members 41B, one of which is bonded to the main surface electrode 222 of one second semiconductor element 22 and the covering portion 172A of the fifth terminal lead 172, and the other first connection member 41B is bonded to the main surface electrode 222 of the other second semiconductor element 22 and the covering portion 172A of the fifth terminal lead 172. Alternatively, the semiconductor device A40 may include two second connection members 42B, one of which is bonded to the second main surface electrode 221 of one second semiconductor element 22 and the covering portion 182A of the seventh terminal lead 182, and the other second connection member 42B is bonded to the second main surface electrode 221 of the other second semiconductor element 22 and the covering portion 182A of the seventh terminal lead 182.

[0154] 49 shows a semiconductor device A41 according to a modification of the fourth embodiment. The semiconductor device A41 differs from the semiconductor device A40 in the following respect: the semiconductor device A41 further includes a second conductive portion 32. In other words, the semiconductor device A41 corresponds to a configuration in which a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22 are provided in the semiconductor device A20. Note that, in the example shown in FIG. 49, the semiconductor device A41 includes two first semiconductor elements 21 and two second semiconductor elements 22, but the number of each of the first semiconductor elements 21 and the second semiconductor elements 22 may be three or more.

[0155] Like the semiconductor device A10, each of the semiconductor devices A40 and A41 according to the fourth embodiment and its modifications has two semiconductor elements (a first semiconductor element 21 and a second semiconductor element 22) packaged in a single sealing resin 50. Therefore, like the semiconductor device A10, each of the semiconductor devices A40 and A41 can reduce the mounting area on the circuit board on which the semiconductor devices A40 and A41 are mounted. In addition, each of the semiconductor devices A40 and A41 has a common configuration with the semiconductor device A10, and therefore achieves the same effects as the semiconductor device A10.

[0156] As can be seen from the above semiconductor devices A10, A40, and A41, in the semiconductor devices of the present disclosure, even if the numbers of first semiconductor elements 21 and second semiconductor elements 22 are different, the configurations of the first die pad 10A, the second die pad 10B, the plurality of terminal leads 13, and the sealing resin 50 are the same. Therefore, even if the numbers of first semiconductor elements 21 and second semiconductor elements 22 are different, the semiconductor device of the present disclosure can utilize the configurations of the terminal leads 13 and the sealing resin 50 as they are. This allows the semiconductor device of the present disclosure to have a common package structure regardless of the numbers of first semiconductor elements 21 and second semiconductor elements 22, which is preferable in terms of improving productivity.

[0157] In the semiconductor devices A40 and A41, examples have been shown in which the two first semiconductor elements 21 are both transistors, but this is not limiting, and one of the two first semiconductor elements 21 may be a transistor and the other a diode. In this case, in the two first semiconductor elements 21, the diode is connected in anti-parallel to the transistor. In this anti-parallel connection, in an example in which the transistor is a MOSFET, the drain electrode and the cathode electrode are connected, and the source electrode and the anode electrode are connected. Similarly, one of the two second semiconductor elements 22 may be a transistor and the other a diode.

[0158] As can be seen from the above semiconductor devices A10, A15 to A17, A20, A25 to A27, A30, A31, A40, and A41, in the semiconductor devices of the present disclosure, even if the types (transistor or diode), planar sizes, and numbers of the first semiconductor element 21 and the second semiconductor element 22 are different, it is possible to standardize the first die pad 10A, the second die pad 10B, the multiple terminal leads 13, and the sealing resin 50 simply by changing the first conductive portion 31 and the second conductive portion 32.

[0159] Although the first to fourth embodiments (including their modified examples) have shown examples in which the first conductive portion 31 is a metal plate (metal clip), the semiconductor device of the present disclosure is not limited to this configuration. For example, the first conductive portion 31 may include one or more bonding wires, and the one or more bonding wires may electrically connect the first principal surface electrode 211 of the first semiconductor element 21, the second principal surface electrode 221 of the second semiconductor element 22, and the first terminal lead 14 to one another.

[0160] Although the first to fourth embodiments (including their modified examples) have been described as examples in which the first conductive portion 31 is provided, the semiconductor device of the present disclosure does not have to include the first conductive portion 31. For example, the semiconductor device of the present disclosure may extend the covering portion 14A of the first terminal lead 14 so that the covering portion 14A is directly bonded to each of the first principal surface electrode 211 and the second principal surface electrode 221.

[0161] The package structure of the semiconductor device of the present disclosure is not limited to those exemplified in the first to fourth embodiments (including their variations). For example, the semiconductor device of the present disclosure can also be applied to other TO (Transistor Outline) packages. Specifically, the semiconductor devices A10, A20, A30, and A40 according to the first to fourth embodiments are extensions of a package structure called TO-247, but may also be extensions of other package structures such as TO-220, TO-252, and TO-263. In other words, the semiconductor device of the present disclosure enables packaging of multiple semiconductor elements (first semiconductor element 21 and second semiconductor element 22) using a single sealing resin 50 while maintaining an appearance similar to that of a conventional TO package.

[0162] The semiconductor device according to the present disclosure is not limited to the above-described embodiments. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways. For example, the semiconductor device according to the present disclosure includes the following embodiments. Supplementary Note 1. A semiconductor device comprising: a first semiconductor element having a first main surface facing one side in the thickness direction and a first main surface electrode arranged on the first main surface; a second semiconductor element having a second main surface facing the same direction as the first main surface and a second main surface electrode arranged on the second main surface; a first die pad on which the first semiconductor element is mounted; a second die pad on which the second semiconductor element is mounted, the second die pad being arranged on one side of the first die pad in a first direction perpendicular to the thickness direction; first terminal leads spaced from the first die pad and the second die pad; and a sealing resin covering the first semiconductor element and the second semiconductor element, wherein the first main surface electrode and the second main surface electrode are electrically connected to the first terminal lead inside the sealing resin. Supplementary Note 2. The semiconductor device according to Supplementary Note 1, further comprising: a second terminal lead extending from the first die pad in a second direction perpendicular to the thickness direction and the first direction; and a third terminal lead extending from the second die pad in the second direction, wherein the first terminal lead, the second terminal lead, and the third terminal lead are arranged in the first direction. Supplementary Note 3. The semiconductor device according to Supplementary Note 2, wherein the first terminal lead is located between the second terminal lead and the third terminal lead in the first direction. Supplementary Note 4. The semiconductor device according to Supplementary Note 3, further comprising a first conductive portion electrically connected to the first main surface electrode, the second main surface electrode, and the first terminal lead. Supplementary Note 5. The semiconductor device according to Supplementary Note 4, wherein the first conductive portion includes a first bonding portion electrically connected to the first main surface electrode, a second bonding portion electrically connected to the second main surface electrode, and a third bonding portion connected to the first terminal lead. Supplementary Note 6. The semiconductor device according to Supplementary Note 5, wherein the first conductive portion is symmetrical about an axis extending in the second direction when viewed in the thickness direction, and the axis overlaps with the third joint portion.Supplementary Note 7. The semiconductor device according to Supplementary Note 6, wherein the first conductive portion includes a first coupling portion connecting the first joint portion and the second joint portion, and a second coupling portion connecting the first coupling portion and the third joint portion.Appendix 8. The semiconductor device according to Appendix 7, wherein the center of gravity of the first conductive portion overlaps with the first conductive portion when viewed in the thickness direction. Appendix 9. The semiconductor device according to Appendix 8, wherein the first connecting portion extends along the first direction between the first bonding portion and the second bonding portion when viewed in the thickness direction, and the second connecting portion extends along the second direction between the first connecting portion and the third bonding portion when viewed in the thickness direction. Appendix 10. The semiconductor device according to any of Appendix 4 to Appendix 9, wherein the sealing resin has a resin main surface facing the same direction as the first main surface and at least one recessed portion recessed from the resin main surface, and each of the at least one recessed portion overlaps with either the first die pad or the second die pad when viewed in the thickness direction. Appendix 11. The semiconductor device according to Appendix 10, wherein each of the at least one recessed portion does not overlap with either of the first conductive portions when viewed in the thickness direction. Appendix 12. The semiconductor device according to any one of Supplementary Note 2 to Supplementary Note 11, wherein the first semiconductor element has a first back surface facing opposite the first main surface in the thickness direction and a first back surface electrode arranged on the first back surface, the second semiconductor element has a second back surface facing opposite the second main surface in the thickness direction and a second back surface electrode arranged on the second back surface, the first back surface electrode being conductively joined to the first die pad, and the second back surface electrode being conductively joined to the second die pad.Supplementary Note 13. The semiconductor device according to Supplementary Note 12, further comprising a second conductive portion joined to the first die pad and the second die pad, and the first back surface electrode and the second back surface electrode being conductively joined via the second conductive portion.Supplementary Note 14. The semiconductor device according to claim 13, wherein the first die pad has a first mounting surface facing the same direction as the first principal surface electrode, the second die pad has a second mounting surface facing the same direction as the second principal surface electrode, and the second conductive portion is bonded to the first mounting surface and the second mounting surface. Appendix 15. The semiconductor device according to claim 14, wherein the second conductive portion overlaps a line segment connecting the first semiconductor element and the second semiconductor element when viewed in the thickness direction.Supplementary Note 16. The semiconductor device according to any one of Supplementary Notes 2 to 15, further comprising a fourth terminal lead, a fifth terminal lead, a sixth terminal lead, and a seventh terminal lead, each spaced apart from the first terminal lead, the second terminal lead, and the third terminal lead and spaced apart from one another. Supplementary Note 17. The semiconductor device according to any one of Supplementary Notes 1 to 16, wherein, when viewed in the thickness direction, the center of gravity of the first semiconductor element overlaps with the center of the first die pad. Supplementary Note 18. The semiconductor device according to any one of Supplementary Notes 1 to 17, wherein, when viewed in the thickness direction, the center of gravity of the second semiconductor element overlaps with the center of the second die pad. Supplementary Note 19. The semiconductor device according to any one of Supplementary Notes 1 to 18, wherein the first semiconductor element is either a transistor or a diode, and the second semiconductor element is either a transistor or a diode.

[0163] A10 to A17, A20 to A27, A30, A31, A40, A41: semiconductor device 10A: first die pad 10B: second die pad 101: main surface 102: back surface 103: seat surface 104: standing surface 109: trace 111: first end surface 112: second end surface 113: third end surface 114: fourth end surface 121: first corner end surface 122: second corner end surface 123: third corner end surface 124: fourth corner end surface 13: terminal lead 14: first terminal lead 14A: covering portion 14B: exposed portion 14C: seat surface 14D: standing surface 15: second terminal lead 15A: covering portion 15B: exposed portion 16: third terminal lead 16A: Covered portion 16B: Exposed portion 171: Fourth terminal lead 171A: Covered portion 171B: Exposed portion 172: Fifth terminal lead 172A: Covered portion 172B: Exposed portion 181: Sixth terminal lead 181A: Covered portion 181B: Exposed portion 182: Seventh terminal lead 182A: Covered portion 182B: Exposed portion 21: First semiconductor element 21a: First main surface 21b: First back surface 211: First main surface electrode 212: Main surface electrode 213: First back surface electrode 22: Second semiconductor element 22a: Second main surface 22b: Second back surface 221: Second main surface electrode 222: Main surface electrode 223: Second back surface electrode 231: Die bonding layer 232: Die bonding layer 31: First conductive portion 31A: First conductor 31B: Second conductor 311: First joint 311a: Strip portion 312: Second joint 312a: Strip portion 313: Third joint 314: First connecting portion 314a: Main body 314b: Bending portion 314c: Bending portion 315: Second connecting portion 315a: Main body 315b: Bending portion 316: Connecting portion 317A, 317B, 318A, 318B: Joint 319A,319B: connecting portion 32: second conductive portion 321: fourth bonding portion 322: fifth bonding portion 323: third connecting portion 33: bonding layer 34: bonding layer 35: bonding layer 36: bonding layer 37: bonding layer 41A: first connecting member 41B: first connecting member 42A: second connecting member 42B: second connecting member 50: sealing resin 51: resin main surface 52: resin back surface 53: first side surface 54: second side surface 55: third side surface 56: recess 57: groove portion 581: recess 582: recess 589: trace,

Claims

1. a first semiconductor element having a first main surface facing one side in a thickness direction and a first main surface electrode disposed on the first main surface; a second semiconductor element having a second main surface facing the same direction as the first main surface and a second main surface electrode disposed on the second main surface; a first die pad on which the first semiconductor element is mounted; a second die pad on which the second semiconductor element is mounted, the second die pad being disposed on one side of the first die pad in a first direction perpendicular to the thickness direction; a first terminal lead spaced apart from the first die pad and the second die pad; a sealing resin that covers the first semiconductor element and the second semiconductor element; Equipped with the first principal surface electrode and the second principal surface electrode are electrically connected to the first terminal lead inside the sealing resin.

2. a second terminal lead extending from the first die pad in a second direction perpendicular to the thickness direction and the first direction; a third terminal lead extending from the second die pad in the second direction, The semiconductor device according to claim 1 , wherein the first terminal lead, the second terminal lead, and the third terminal lead are arranged in the first direction.

3. The semiconductor device according to claim 2 , wherein the first terminal lead is located between the second terminal lead and the third terminal lead in the first direction.

4. The semiconductor device according to claim 3 , further comprising a first conductive portion electrically connected to said first principal surface electrode, said second principal surface electrode, and said first terminal lead.

5. 5. The semiconductor device according to claim 4, wherein the first conductive portion includes a first joint portion conductively joined to the first principal surface electrode, a second joint portion conductively joined to the second principal surface electrode, and a third joint portion joined to the first terminal lead.

6. the first conductive portion is symmetrical with respect to an axis extending in the second direction when viewed in the thickness direction, The semiconductor device according to claim 5 , wherein the axis overlaps with the third joint portion.

7. 7. The semiconductor device according to claim 6, wherein the first conductive portion includes a first connecting portion that connects the first joint portion and the second joint portion, and a second connecting portion that connects the first connecting portion and the third joint portion.

8. The semiconductor device according to claim 7 , wherein a center of gravity of said first conductive portion overlaps said first conductive portion when viewed in the thickness direction.

9. The first connecting portion extends along the first direction between the first joint portion and the second joint portion when viewed in the thickness direction, The semiconductor device according to claim 8 , wherein the second connecting portion extends along the second direction between the first connecting portion and the third bonding portion when viewed in the thickness direction.

10. the sealing resin has a resin main surface facing the same direction as the first main surface and at least one recess recessed from the resin main surface, 10. The semiconductor device according to claim 4, wherein each of the at least one recessed portion overlaps either the first die pad or the second die pad when viewed in the thickness direction.

11. The semiconductor device according to claim 10 , wherein each of the at least one recessed portion does not overlap any of the first conductive portions when viewed in the thickness direction.

12. the first semiconductor element has a first back surface facing a side opposite to the first main surface in the thickness direction and a first back surface electrode disposed on the first back surface; the second semiconductor element has a second back surface facing a side opposite to the second main surface in the thickness direction and a second back surface electrode disposed on the second back surface; the first back surface electrode is conductively joined to the first die pad; 10. The semiconductor device according to claim 2, wherein the second back surface electrode is conductively joined to the second die pad.

13. a second conductive portion bonded to the first die pad and the second die pad, The semiconductor device according to claim 12 , wherein the first back surface electrode and the second back surface electrode are electrically connected to each other via the second conductive portion.

14. the first die pad has a first mounting surface facing in the same direction as the first main surface electrode, the second die pad has a second mounting surface facing in the same direction as the second main surface electrode, The semiconductor device according to claim 13 , wherein the second conductive portion is joined to the first mounting surface and the second mounting surface.

15. The semiconductor device according to claim 14 , wherein the second conductive portion overlaps a line segment connecting the first semiconductor element and the second semiconductor element when viewed in the thickness direction.

16. 10. The semiconductor device according to claim 2, further comprising a fourth terminal lead, a fifth terminal lead, a sixth terminal lead and a seventh terminal lead, each of which is spaced apart from the first terminal lead, the second terminal lead and the third terminal lead and is spaced apart from each other.

17. 10. The semiconductor device according to claim 1, wherein a center of gravity of the first semiconductor element overlaps with a center of the first die pad when viewed in the thickness direction.

18. 10. The semiconductor device according to claim 1, wherein a center of gravity of the second semiconductor element overlaps a center of the second die pad when viewed in the thickness direction.

19. the first semiconductor element is either a transistor or a diode; 10. The semiconductor device according to claim 1, wherein the second semiconductor element is either a transistor or a diode.