Semiconductor device

Abstract

This semiconductor device includes: a chip having a main surface; a trench resistor structure formed in the main surface; a resistor film that is formed on the main surface and is electrically connected to the trench resistor structure; a gate terminal electrode that is formed on the main surface and is electrically connected to the trench resistor structure via the resistor film, the gate terminal electrode having a lower resistance value than the resistor film; and a gate wiring electrode that is formed on the main surface and is electrically connected to the gate terminal electrode via the resistor film and the trench resistor structure, the gate wiring electrode having a lower resistance value than the resistor film.