Electronic apparatus

Abstract

Provided is an electronic apparatus with reduced stray light. The electronic apparatus includes a display panel and an optical device. The optical device has a function of partially reducing the brightness of light which is emitted by the display panel. For the optical device, a half mirror, a dimmer filter, or the like, can be used, the transmittance of which continuously decreases outwards from the inside thereof. By using such electronic apparatus, stray light, which tends to occur around a lens, can be reduced, and the visibility of an image displayed on the display panel can therefore be improved.

Description

electronic equipment

[0001] One aspect of the present invention relates to an electronic device having an optical device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, and an operation method thereof or a manufacturing method thereof.

[0003] Note that in this specification and the like, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are examples of a semiconductor device. In addition, a memory device, a display device, an imaging device, and an electronic device may include a semiconductor device.

[0004] 2. Description of the Related Art Goggle-type devices and eyeglass-type devices have been developed as electronic devices for virtual reality (VR) or augmented reality (AR).

[0005] Representative examples of display devices applicable to the display panel include display devices including liquid crystal elements, and display devices including organic EL (Electro Luminescence) elements or light-emitting diodes (LEDs: Light Emitting Diodes).

[0006] A display device equipped with an organic EL element does not require a backlight, which is necessary in a liquid crystal display device, and therefore can realize a thin, lightweight, high-contrast, and low-power display device. For example, an example of a display device using an organic EL element is described in Patent Document 1.

[0007] JP 2018-107444 A

[0008] Electronic devices used in VR, AR, and the like are a type of wearable device, and are therefore required to be small in size to improve portability and wearability. For this reason, optical devices designed to have a short focal length are used in such electronic devices.

[0009] This optical device is designed to ensure the optical path length by utilizing polarization and reflection between elements, but unintended surface reflections and light with a deformed polarization state may occur due to optical components. This light deviates from the normal optical path and enters the eye, where it is perceived as stray light. Stray light is one of the factors that degrade the quality of the image perceived.

[0010] Therefore, an object of one embodiment of the present invention is to provide an electronic device with little stray light, to provide an electronic device with high-quality images that can be viewed, to provide a small and thin electronic device, or to provide a novel electronic device.

[0011] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become clear from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc.

[0012] One embodiment of the present invention relates to an electronic device with reduced stray light.

[0013] One aspect of the present invention is an electronic device that has a display panel and an optical device, which has a first function of concentrating light emitted by the display panel and emitting it to the user's eyes, and a second function of partially reducing the brightness of the light emitted by the display panel, and which can be viewed by continuously increasing the rate of reduction in the brightness of the light emitted by the display panel from the central region of the field of view to the edge of the field of view.

[0014] The optical device may have a half mirror having a region in which the transmittance decreases continuously from the inside to the outside.

[0015] Alternatively, the optical device may have a neutral density filter with regions of successively lower transmittance from the inside to the outside.

[0016] The central region is preferably a range of 20° to 40° including the center of the field of view.

[0017] When the transmittance of the optical device corresponding to the central region is set to 1, the transmittance of the optical device corresponding to the edge of the field of view is preferably 0.3 or more and 0.7 or less.

[0018] The display panel preferably includes an organic EL element.

[0019] According to one embodiment of the present invention, an electronic device with little stray light can be provided. Alternatively, an electronic device with high-quality images that can be viewed can be provided. Alternatively, a thin and lightweight electronic device can be provided. Alternatively, a novel electronic device can be provided.

[0020] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims.

[0021] FIGS. 1A and 1B are diagrams illustrating a state in which an image displayed on a display panel is viewed through an optical device. FIG. 2 is a diagram illustrating a viewing angle. FIG. 3 is a diagram illustrating the transmittance of an optical device. FIGS. 4A and 4B are diagrams illustrating an optical device. FIGS. 5A and 5B are diagrams illustrating an optical device. FIG. 6A is a diagram illustrating a half mirror. FIG. 6B is a diagram illustrating a neutral density filter. FIGS. 7A and 7B are diagrams illustrating an optical device. FIG. 8 is a diagram illustrating an electronic device. FIGS. 9A to 9C are diagrams illustrating a display device. FIGS. 10A and 10B are diagrams illustrating an eyeglass-type device. FIGS. 11A to 11C are diagrams illustrating an example configuration of a display panel. FIGS. 12A and 12B are diagrams illustrating an example configuration of a display panel. FIGS. 13A to 13F are diagrams illustrating an example configuration of a pixel. FIGS. 14A and 14B are diagrams illustrating an example configuration of a display panel. FIG. 15 is a diagram illustrating an example configuration of a display panel. FIG. 16 is a diagram illustrating an example configuration of a display panel. Fig. 17 is a diagram illustrating an example of the configuration of a display panel. Fig. 18 is a diagram illustrating an example of the configuration of a display panel. Fig. 19 is a diagram illustrating an example of the configuration of a display panel. Fig. 20 is a diagram illustrating an example of the configuration of a display panel. Fig. 21 is a diagram illustrating an example of the configuration of a display panel.

[0022] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art will readily understand that various modifications in form and detail may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be designated by the same reference numerals in different drawings, and repeated description thereof may be omitted. Hatching of the same elements constituting the drawings may be omitted or changed as appropriate in different drawings.

[0023] Furthermore, even if a circuit diagram shows a single element, that element may be configured as multiple elements as long as there is no functional problem. For example, multiple transistors operating as switches may be connected in series or parallel. Also, a capacitor may be divided and placed in multiple locations.

[0024] Furthermore, one conductor may have multiple functions, such as wiring, electrode, and terminal, and in this specification, multiple names may be used for the same element. Also, even when elements are shown as being directly connected to each other on a circuit diagram, in reality, the elements may be connected via one or more conductors, and in this specification, such a configuration is also included in the category of direct connection.

[0025] Embodiment 1 In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0026] One aspect of the present invention is an electronic device such as a goggle-type device or an eyeglass-type device, which includes a display panel and an optical device. The optical device has a function of concentrating light emitted by the display panel and emitting the light to the user's eyes. The optical device also has a function of partially reducing the brightness of the light emitted by the display panel, thereby reducing stray light.

[0027] Stray light refers to light that enters the eye without passing through the normal optical path, and is perceived as overlapping with the normal image. Stray light is one factor that reduces the quality of the display seen on electronic devices. Since stray light appears in unintended positions, it is also called a ghost.

[0028] Optical devices can use half mirrors or neutral density filters, whose transmittance decreases continuously from the inside to the outside, to suppress stray light that tends to occur around the periphery of the lens, improving the visibility of images displayed on the display panel.

[0029] Note that an optical device included in an electronic device of one embodiment of the present invention has a structure in which a plurality of optical components are combined. Such a structure housed in a housing is also simply called a lens. Alternatively, it may be called a pancake lens because of its thin shape.

[0030] 1A and 1B are diagrams illustrating the state in which an image displayed on a display panel is viewed through an optical device. Here, the dashed lines surrounding the image indicate the edge of the field of view. Note that in this embodiment, the field of view of one eye corresponding to one display panel will be described. Furthermore, the actual field of view differs in the horizontal and vertical directions, and its shape is unclear, but here it will be described as being circular.

[0031] 1A shows an image displayed on a display panel being magnified and viewed using an optical device that is prone to stray light, which can degrade the viewing quality by causing double images, blurred edges, or bright spots.

[0032] Stray light is more easily visible at the periphery of the field of view than at the center. This is due to the use of polarized light and the curvature of the lens. Small goggle-type devices, for example, use a configuration that allows selective reflection using polarized light to shorten the focal length. Polarized light passes through the lens in the normal optical path and is then reflected by a reflective polarizer. However, the angle of incidence of light is larger at the periphery of the lens, which can disrupt the polarization state. Some of this polarized light passes through the reflective polarizer without reflecting, deviating from the normal optical path and becoming stray light.

[0033] 1B shows a state in which an image similar to that shown in FIG. 1A is viewed using an optical device according to one embodiment of the present invention. The optical device according to one embodiment of the present invention has a function of partially reducing the luminance of light emitted from a display panel along the optical path. Specifically, the luminance is not reduced in a central region including the center of the field of view, but is reduced continuously from the edge of the central region to the edge of the field of view. In other words, the rate of reduction in the luminance of light emitted from the display panel is continuously increased from the edge of the central region to the edge of the field of view.

[0034] 1B shows a state in which the brightness of light emitted by the display panel is not reduced in the central region, but is continuously reduced from the edge of the central region to the edge of the field of view, as if dimming with a gradation filter. As described above, stray light is likely to occur in the peripheral portion of the lens of an optical device. However, by reducing the brightness of the peripheral portion of the field of view corresponding to the peripheral portion of the lens, the absolute amount of generated stray light can be reduced. Furthermore, in an optical device according to one embodiment of the present invention, which will be described later, the ratio of stray light to light passing through a normal optical path can also be reduced.

[0035] Here, we will explain visibility when the brightness of the periphery of the visual field is reduced. The fovea and its vicinity on the retina of the human eye contribute to high-resolution vision, but the resolution in areas on the retina away from the fovea is not as high as that of the fovea. Taking advantage of this property of the human eye, a technology called foveal rendering has been proposed that tracks the user's line of sight when displaying images, displaying the central visual field at high resolution and the peripheral visual field at low resolution.

[0036] The same is true for brightness in a static state: the human eye is highly sensitive in the central visual field but less sensitive in the peripheral visual field. That is, even if the brightness is reduced toward the edge of the visual field, as in one embodiment of the present invention, it is difficult for people to perceive it, and it does not feel unnatural. However, if the brightness is reduced too much, people will perceive a narrow viewing angle. Therefore, there is an appropriate range for adjusting the brightness in the peripheral visual field.

[0037] 2 is a diagram illustrating the viewing angle. When the edge of the viewing field A (one of the points constituting the periphery of the viewing field A) in the electronic device of one embodiment of the present invention is A1 and the edge of the viewing field A opposite to A1 is A2, the angle formed by two lines connecting the human eye 10 with A1 and A2, respectively, is θ Ｆ Let θ Ｆ The angle is called the viewing angle. When the edge of the central region B (one of the points constituting the periphery of the central region B) is B1 and the edge of the central region B opposite to B1 is B2, the angle formed by the two lines connecting the human eye 10 with B1 and B2 is called θ Ｃ Let θ Ｃis the angle that defines the central region B that overlaps with the central visual field. The central region B is preferably the same as or larger than the central visual field.

[0038] Viewing angle θ Ｆ is a value specific to the electronic device or the human eye. Ｃ is the viewing angle θ Ｆ Regardless of the angle, it is known from sensory tests that the angle is preferably 20° or more and 40° or less, more preferably 25° or more and 35° or less, and typically 30°.

[0039] 3 is a diagram illustrating the transmittance of an optical device within a field of view. Here, the angle θ defining the central region B is Ｃ For example, from the above, 20°≦θ Ｃ ≦40°. This range overlaps with the central visual field and is a region where the human eye is highly sensitive, so it is preferable that the rate of reduction in luminance relative to the displayed image be as small as possible. In other words, in the region corresponding to the central region B of the optical device, no light-reducing elements are included in the optical path so that the transmittance is relatively high.

[0040] Since polarized light and half mirrors are used in optical devices, the transmittance may drop to about 10% even if no light-reducing elements are in the optical path. Since the transmittance of optical devices varies depending on their configuration, the following explanation will be given using relative transmittance, with the transmittance of the central region B set to 1.

[0041] The rate of decrease in brightness of the displayed image is continuously increased from the edge of the central region B to the edge of the field of view A. That is, the transmittance of the optical device is continuously decreased. In Figure 3, the range T1 of appropriate transmittance that can be assumed at the edge A1 of the field of view A, which is the closest from the edge B1 of the central region B, and the range T2 of appropriate transmittance that can be assumed at the edge A2 of the field of view A, which is the closest from the edge B2 of the central region B, are indicated by diagonal lines.

[0042] As shown in FIG. ＣIt is preferable that the transmittance at the edges B1 and B2 of the central region B is 1 when the angle θ is ≦40°, and that the transmittance at the edges A1 and A2 of the field of view A is continuously reduced so that it is 0.3 or more and 0.7 or less. This range is set based on the results of sensory tests, and outside this range, it is felt that stray light is not sufficiently reduced, the viewing angle is narrow, or the brightness and darkness of the displayed image becomes unnatural. Typically, Ｃ When θ = 30°, Ｃ From θ Ｆ It is preferable that the transmittance be continuously reduced to 0.5 at the ends A1 and A2 of the field of view A.

[0043] The decrease in transmittance between B1 and A1 and between B2 and A2 tends to be nonlinear (a quadratic curve) because the normal optical path of the optical device includes the transmission path and reflection path of the half mirror, but it may also be linear. Furthermore, it is not limited to a continuous change, and may be changed in stages so as not to affect visibility.

[0044] Next, we will explain an optical device that has the function of continuously increasing the rate of decrease in the luminance of light emitted from a display panel. Here, we will explain the components that perform this function, and the details of the overall configuration and polarization state of the optical device will be described later. In addition, we will ignore reflection, transmission, absorption, etc. other than the main function of each element and will explain the transmission and reflection of incident light in the normal optical path and the generation of stray light.

[0045] 4A is a comparative example of an optical device that does not perform partial reduction of luminance, and is a cross-sectional view showing some elements of the optical device in which stray light is easily visible. The optical device includes a half mirror 41, a lens 42, a retardation plate 43, a reflective polarizer 44, and a lens 45. Note that while the half mirror 41 is shown as being provided on one surface of the lens 42, it may also be formed on a support body different from that on which the lens 42 is provided.

[0046] The incident light passes through the half mirror 41 and the lens 42 and is reflected by the reflective polarizer 44. At this time, due to the collapse of the polarization state caused by the lens 42, part of the light passes through the reflective polarizer 44 and the lens 45 and becomes stray light.

[0047] Stray light amount I occurring near the center of the optical device (near the central field of view) Ｇis the amount of incident light I ０ is the product of the transmittance T of the half mirror and the proportion X of light that passes through the reflective polarizer (I Ｇ =I ０ ・T・X (Formula 1)).

[0048] Furthermore, if the value of X is a times (a>1) higher at the periphery of the lens 42 than near the center, the amount of stray light I' generated at the periphery of the lens is Ｇ is the amount of incident light I ０ is the product of the transmittance T of the half mirror and the proportion aX of light transmitted through the reflective polarizer (I' Ｇ =I ０ ・T・aX (Formula 2)).

[0049] The light that has been reflected by the reflective polarizer 44 and travels along the normal optical path is reflected by the half mirror 41 , undergoes polarization conversion, and passes through the reflective polarizer 44 and the lens 45 .

[0050] The amount of light I (amount of light on the normal optical path) transmitted through the reflective polarizer 44 near the center of the optical device is ０ and the product of the transmittance T of the half mirror and the reflectance (1-T) of the half mirror (I=I ０ ·T·(1−T)) In reality, there is a loss of the amount X mentioned above, but X is a small value and is ignored here.

[0051] Since the amount of light in the normal optical path is not dependent on the position of the lens, the amount of light I' that passes through the reflective polarizer 44 around the lens 42 is the same as the amount of light I (I'=I ０ ・T・(1−T) (Formula 3)).

[0052] Here, from Equation 1 and Equation 2, I' Ｇ = aI Ｇ This means that the amount of stray light at the periphery of the lens 42 is a times (a>1) higher than that near the center.

[0053] Furthermore, the ratio of the amount of stray light around the lens 42 to the amount of light on the normal optical path is expressed as I' from Equations 2 and 3. Ｇ / I'=(I ０ ・T・aX) / (I ０ ・T・(1−T))=aX / (1−T).

[0054] Next, the configuration shown in Fig. 4B will be described as Configuration Example 1 of one aspect of the present invention. The basic configuration is the same as that shown in Fig. 4A, but differs in that the transmittance (T') of the peripheral portion of the half mirror 41 is smaller than the transmittance (T) near the center, which corresponds to the central region B shown in Figs. 2 and 3 (T>T').

[0055] To achieve this type of transmittance for the half mirror 41, for example, the transmittance may be set to 0.5 in region C, which corresponds to central region B, and the transmittance may be continuously decreased toward the end, as shown in the front view of Fig. 6A. Note that the transmittance of the entire optical device can also be decreased by increasing the transmittance of the half mirror 41 to more than 0.5 toward the end, but since stray light would increase according to Equation 2, the transmittance of the half mirror 41 should be set to less than 0.5 toward the end.

[0056] The amount of light in the normal optical path in the half mirror 41 is a quadratic function of the transmittance T, where transmittance + reflectance = 1, and the midpoint is the extreme value. That is, the transmittance in area C is maximized when the transmittance is 0.5 and the reflectance is 0.5. Note that the edge of the field of view A shown in Figures 2 and 3 does not necessarily have to be the outer periphery of the half mirror 41, but may be located inside it.

[0057] Such a half mirror can be fabricated by etching a metal or dielectric film formed on a support using a gray-tone resist mask so that the film thickness is gradient within the plane. Alternatively, it can be fabricated by performing the film formation process multiple times using metal masks with different opening sizes.

[0058] Amount of stray light generated near the center of the optical device I Ｇ is the same as in Equation 1, Ｇ =I ０ ・T・X (Equation 4).

[0059] Furthermore, if the value of X is a times (a>1) higher at the periphery of the lens 42 than in the vicinity of the center, the amount of stray light I' Ｇ I' Ｇ =I ０ .T'.aX (Equation 5).

[0060] Here, since T>T', if T'=mT (0<m<1), then from Equation 4 and Equation 5, I'Ｇ =I ０ ・mT・aX=amI Ｇ In the configuration shown in FIG. Ｇ = aI Ｇ Since m is smaller than 1, it can be said that the configuration shown in FIG. 4B produces less stray light around the lens 42 than the comparative example shown in FIG. 4A.

[0061] The amount of light I (amount of light on the normal optical path) transmitted through the reflective polarizer 44 near the center of the optical device is I = I, as in the comparative example of FIG. 4A. ０ ・T・(1-T).

[0062] The amount of light I′ passing through the reflective polarizer 44 around the lens 42 is expressed as I′=I ０ This is expressed as follows: •T'•(1-T') (Equation 6).

[0063] Furthermore, the ratio of the amount of stray light around the lens 42 to the amount of light on the normal optical path is expressed as I' from Equations 5 and 6. Ｇ / I'=(I ０ ・T'・aX) / (I ０ In the configuration of FIG. 4A, I' Ｇ Since / I' = aX / (1-T) and m is smaller than 1, it can be said that the ratio of stray light to normal light around the periphery of lens 42 is smaller in the configuration shown in Figure 4B than in the comparative example shown in Figure 4A.

[0064] 4B, the amount of stray light in the peripheral portion of the lens 42 can be reduced compared to the comparative example shown in FIG. 4A. Also, although the amount of light in the normal optical path in the peripheral portion is reduced compared to the comparative example, the ratio of the amount of stray light to the amount of light in the normal optical path can be reduced compared to the comparative example. Therefore, the visibility of the display can be improved.

[0065] Next, the configuration shown in Fig. 5A will be described as a second configuration example of one aspect of the present invention. The basic configuration of the optical device is the same as that of Fig. 4A, and a display image obtained by processing data so that the rate of decrease in luminance increases from the center to the edge of the original image is used as incident light. Here, the amount of incident light near the center is defined as I ０ , the amount of incident light in the peripheral area is I １ (I０ >I １ )

[0066] Amount of stray light generated near the center of the optical device I Ｇ is the same as in Equation 1, Ｇ =I ０ ・T・X (Equation 7).

[0067] Furthermore, if the value of X is a times (a>1) higher at the periphery of the lens 42 than in the vicinity of the center, the amount of stray light I' Ｇ I' Ｇ =I １ ・T・aX (Equation 8).

[0068] Here, I ０ >I １ From I １ = mI ０ If (0<m<1), then from equations 7 and 8, I' Ｇ = mI ０ ・T・aX=amI Ｇ In the comparative example shown in FIG. Ｇ = aI Ｇ Since m is smaller than 1, it can be said that the amount of stray light generated around the lens 42 is smaller in the configuration shown in FIG. 5A than in the comparative example shown in FIG. 4A.

[0069] The amount of light I (amount of light on the normal optical path) transmitted through the reflective polarizer 44 near the center of the optical device is I = I, as in FIG. 4A. ０ ・T・(1-T).

[0070] The amount of light I′ passing through the reflective polarizer 44 around the lens 42 is expressed as I′=I １ ・T・(1-T)=mI ０ ·T·(1−T) (Equation 9).

[0071] Furthermore, the ratio of the amount of stray light around the lens 42 to the amount of light on the normal optical path is expressed by the following equations (8) and (9): I' Ｇ / I'=(I １ ・T・aX) / (I １ ・T・(1−T))=aX / (1−T).

[0072] 5A, the amount of stray light in the peripheral portion of the lens 42 can be reduced compared to the comparative example shown in FIG. 4A. Also, although the amount of light in the normal optical path in the peripheral portion of the lens 42 is reduced, the ratio of stray light to the amount of light in the normal optical path can be kept the same as in the comparative example without increasing. Therefore, the visibility of the display can be improved.

[0073] Next, the configuration shown in Fig. 5B will be described as Configuration Example 3 of one embodiment of the present invention. The basic configuration is the configuration in which a neutral density filter 46 is added to the configuration in Fig. 4A. The neutral density filter 46 can be provided on the incident surface side of the half mirror 41, between the reflective polarizer 44 and the lens 45, or on the exit surface side of the lens 45. Fig. 5B shows an example in which the neutral density filter 46 is provided on the incident surface side of the half mirror 41.

[0074] The effect of reducing the amount of stray light can also be achieved when the neutral density filter 46 is provided between the lens 42 and the retardation plate 43. However, because the light passes through the neutral density filter multiple times along the normal optical path, the ratio of the amount of stray light to the amount of normal light is higher than in other configurations. Therefore, it is preferable to provide the neutral density filter 46 in the position described above.

[0075] The neutral density filter 46 is configured such that the transmittance (F') of the peripheral portion is smaller than the transmittance (F) near the center (F>F'). To achieve such a transmittance of the neutral density filter 46, for example, as shown in FIG. 6B , the transmittance may be highest in region C corresponding to central region B and continuously decrease toward the edge. For example, when the relative transmittance of region C is 1, the transmittance at the edge may be set to a value smaller than 1, such as 0.5. Note that the edge of the field of view A shown in FIGS. 2 and 3 does not necessarily have to be the outer periphery of the neutral density filter 46, but may be located inside it.

[0076] Amount of stray light generated near the center of the optical device I Ｇ I Ｇ =I ０ ・F・T・X (Equation 10).

[0077] Furthermore, if the proportion of light passing through the reflective polarizer is a times (a>1) higher at the periphery of the lens than near the center, the amount of stray light I' Ｇ I'Ｇ =I ０ .F'.T.aX (Equation 11).

[0078] Here, since F>F', if F'=mF (0<m<1), then from equations 10 and 11, I' Ｇ =I ０ ・mF・T・aX=amI Ｇ In the comparative example shown in FIG. Ｇ = aI Ｇ Since m is smaller than 1, it can be said that the amount of stray light generated around the lens 42 is smaller in the configuration shown in FIG. 5B than in the comparative example shown in FIG. 4A.

[0079] The amount of light I (amount of light on the normal optical path) transmitted through the reflective polarizer 44 near the center of the optical device is I=I ０ ・F・T・(1-T).

[0080] The amount of light I′ passing through the reflective polarizer 44 around the lens 42 is expressed as I′=I ０ ・F'・T・(1-T)=I ０ mF·T·(1−T) (Equation 12).

[0081] Furthermore, the ratio of the amount of stray light around the lens 42 to the amount of light on the normal optical path is expressed as I' from Equations 11 and 12. Ｇ / I'=(I ０ ・F'・T・aX) / (I ０ .F'.T.(1-T))=aX / (1-T).

[0082] 5B, the amount of stray light at the periphery of the lens 42 can be reduced compared to the comparative example shown in FIG. 4A. Although the amount of light in the normal optical path at the periphery of the lens 42 is reduced, the ratio of stray light to the amount of light in the normal optical path can be kept the same as in the comparative example without increasing. Therefore, the visibility of the display can be improved.

[0083] 4A to 5B, the stray light (I Ｇ , I' Ｇ ) has been described, but as shown in FIG. 7A, light I reflected on the surface (second surface) of the lens 42 ＳＲWhen the half mirror 41 is formed on the first surface of the lens 42, the number of times that light passes through the second surface of the lens 42 in the normal optical path is three, and therefore the light is susceptible to the influence of surface reflection.

[0084] Therefore, light I ＳＲ If there is a lot of stray light caused by this, a configuration may be adopted in which a half mirror 41 is provided on the second surface of the lens 42, as shown in Fig. 7B. With the configuration shown in Fig. 7B, the number of times light passes through the second surface of the lens 42 is one, making it less susceptible to the influence of surface reflection and enabling the reduction of stray light. The configuration shown in Fig. 7B can be applied to the configurations shown in Figs. 4B to 5C.

[0085] 8 is a diagram illustrating an electronic device having a display device 30 and an optical device 40, with a portion of the optical path indicated by a dashed line. For clarity, some elements that can be placed close together are shown separated from each other. The following description will primarily focus on the case where the configuration illustrated in FIG. 4B is used.

[0086] The user can view the image displayed on the display device 30 by bringing the eye 10 close to the optical device 40. The user can view the image with the viewing angle widened by the optical device 40, which gives the user a sense of immersion and realism.

[0087] The display device 30 has a configuration in which a display panel 31, a linear polarizer 32, and a retarder 33 are arranged to have an overlapping region. In the following description, the first surface refers to one surface of each element, and the second surface refers to the surface opposite to the first surface.

[0088] For example, a configuration may be adopted in which a first surface of the linear polarizer 32 is close to the display portion of the display panel 31, and a second surface of the linear polarizer 32 is close to a first surface of the retardation film 33. The combination of the linear polarizer 32 and the retardation film 33 is also called a circular polarizer that converts unpolarized light into circularly polarized light.

[0089] The linear polarizer 32 and the retarder 33 do not have to be elements of the display device 30, and may be provided between the display device 30 (display panel 31) and the optical device 40. Alternatively, they may be elements of the optical device 40, and disposed on the light incident surface side of the optical device 40 (the incident surface side of the half mirror 41). Alternatively, the linear polarizer 32 may be an element of the display device 30, and the retarder 33 may be an element of the optical device 40.

[0090] The optical device 40 has an area where a half mirror 41, a lens 42, a retardation plate 43, a reflective polarizer 44, and a lens 45 overlap one another. The optical axes of the lenses 42 and 45 are arranged so as to perpendicularly intersect with the display section of the display panel 31. When a neutral density filter 46 is provided, it is preferably provided on the incident surface side of the half mirror 41, between the reflective polarizer 44 and the lens 45, or on the exit surface side of the lens 45. Figure 8 shows an example in which the neutral density filter 46 is provided on the incident surface side of the half mirror 41.

[0091] Note that "perpendicular" refers to a state in which two straight lines form an angle of 85° or more and 95° or less. Here, one of the two straight lines refers to the optical axis of lens 42 and lens 45, and the other refers to a straight line parallel to the display unit (display surface).

[0092] For example, the first surface of the half mirror 41 may be configured to be close to the first surface of the lens 42. Alternatively, the first surface of the reflective polarizer 44 may be configured to be close to the first surface of the retarder 43, and the first surface of the lens 45 may be configured to be close to the second surface of the reflective polarizer 44.

[0093] In order to ensure the necessary optical path length, the half mirror 41 and the lens 42 may be disposed apart from each other, and the lens 42 and the phase difference plate 43 may be disposed close to each other.

[0094] In order to achieve a configuration in which one element and the other element are close to each other, it is preferable to bond the elements together using an optical adhesive that has high transmittance for the wavelength of light to be used (for example, the wavelength range of visible light or the wavelength range from blue light to red light) and does not absorb or birefringence of specific polarized light. Alternatively, instead of bonding, one element may be formed by contacting the other element on top of the other element using a method such as coating. Alternatively, one element and the other element may be arranged so that they are in contact with each other without providing an adhesive or the like between them. Alternatively, a gap may be provided between the two.

[0095] Note that, as shown in FIG. 8, the effect of one embodiment of the present invention can also be obtained by disposing the elements of the display device 30 and the optical device 40 separately.

[0096] A portion of the light emitted from the display panel 31 passes through the linear polarizer 32, the retardation plate 33, the half mirror 41, the lens 42, and the retardation plate 43, and is reflected by the reflective polarizer 44. The light reflected by the reflective polarizer 44 passes through the retardation plate 43 and the lens 42, and is reflected again by the half mirror 41. The light reflected by the half mirror 41 passes through the lens 42, the retardation plate 43, the reflective polarizer 44, and the lens 45, is condensed, and is emitted to the eye 10.

[0097] In this way, repeated reflection within the optical device 40 ensures a sufficient optical path length, making it possible to provide an optical system with a short focal length.

[0098] The display panel 31 may be a liquid crystal panel having liquid crystal elements, an organic EL panel having organic EL elements, or an LED panel having micro LEDs (Light Emitting Diodes). In particular, it is preferable to use an organic EL panel which is self-luminous and can easily form a high-definition display unit. In this specification, a micro LED is defined as a light emitting diode (LED) having a chip area of ​​10,000 μm. ２ The LED panel is not limited to micro LEDs, and may be, for example, a light-emitting diode with a chip area of ​​10,000 μm ２ Larger than 1mm ２ The following light emitting diodes (also called mini LEDs) may be used:

[0099] The linear polarizer 32 can extract one linearly polarized light from light vibrating in all directions through 360°. In this embodiment, the description will be given assuming that the transmission axis of the linear polarizer 32 is 0°, but 0° is not an absolute value but a reference value. In other words, the polarization plane of the linearly polarized light extracted by the linear polarizer 32 is treated as 0°. Therefore, for example, 90° linearly polarized light in this embodiment means linearly polarized light whose polarization plane is rotated by 90° from the linearly polarized light extracted by the linear polarizer 32.

[0100] The retardation plate 33 has a function of converting linearly polarized light into circularly polarized light. Here, a λ / 4 plate (¼ wavelength plate) is used as the retardation plate 33. When the linear polarizer 32 and the λ / 4 plate are overlapped so that the slow axis of the λ / 4 plate is at 45° with respect to the axis of the linearly polarized light emitted from the linear polarizer 32, right-handed circularly polarized light (right-handed circularly polarized light) is obtained. When the linear polarizer 32 and the λ / 4 plate are overlapped so that the slow axis of the λ / 4 plate is at −45° with respect to the axis of the linearly polarized light emitted from the linear polarizer 32, left-handed circularly polarized light (left-handed circularly polarized light) is obtained. In one embodiment of the present invention, either right-handed circularly polarized light or left-handed circularly polarized light may be used as long as the combination with the characteristics of the reflective polarizer 44 described below is appropriate.

[0101] The half mirror 41 may have a structure in which, for example, an optical glass or optical resin material with high visible light transmittance is used as a support, and a surface provided with a metal film or a dielectric film is used as a reflecting surface. The structure described in FIG. 6A may be used for the half mirror 41.

[0102] Furthermore, it is preferable that the reflective surface of the half mirror 41 has a positive refractive power in order to focus light toward the eye 10. Therefore, it is preferable that the surface used for the reflective action of the half mirror 41 is a concave curved surface. Here, an example is shown in which a convex meniscus lens is used as the lens 42, and the half mirror 41 is provided on one surface of the lens 42. Note that the half mirror 41 may be provided on a support different from that of the lens 42.

[0103] A convex lens can be used as the lens 42. While FIG. 8 shows an example in which a convex meniscus lens is used as the lens 42, the present invention is not limited to this. For example, the lens 42 may be configured with one or more plano-convex lenses. Furthermore, a biconvex lens can be used as the lens 42. Alternatively, the lens 42 can be configured with a combination of lenses selected from a biconvex lens, a plano-convex lens, a biconcave lens, a plano-concave lens, a convex meniscus lens, and a concave meniscus lens. Furthermore, the lens 42 is not limited to a spherical lens, and may also be an aspherical lens.

[0104] The lens 45 may be the same as the lens 42. The optical device 40 may be provided with lenses other than the lenses 42 and 45.

[0105] The retardation plate 43 has a function of reversibly converting linearly polarized light and circularly polarized light. As the retardation plate 43, a λ / 4 plate (¼ wavelength plate) can be used, similar to the retardation plate 33.

[0106] The reflective polarizer 44 transmits linearly polarized light whose vibration direction coincides with the transmission axis and reflects linearly polarized light that is perpendicular to the transmission axis. As the reflective polarizer, for example, a wire grid polarizer or a dielectric multilayer film can be used.

[0107] The polarization state in the optical device 40 will be described in detail below with reference to the optical path shown in FIG.

[0108] Light emitted from the display panel 31 and vibrating in all directions of 360° is incident on the linear polarizer 32. The transmission axis of the linear polarizer 32 is 0°, and 0° linearly polarized light is emitted from the linear polarizer 32.

[0109] The 0° linearly polarized light emerging from the linear polarizer 32 is converted into right-handed circularly polarized light by the retarder 33. The right-handed circularly polarized light emerging from the retarder 33 passes through the half mirror 41 and enters the lens 42.

[0110] The right-handed circularly polarized light emitted from lens 42 is incident on retardation plate 43 and converted into 0° linearly polarized light. The 0° linearly polarized light emitted from retardation plate 43 is reflected by reflective polarizer 44 with a reflection axis of 0°, and is incident on retardation plate 43 and converted into right-handed circularly polarized light.

[0111] The right-handed circularly polarized light emerging from the retardation plate 43 passes through the lens 42 and is reflected by the half mirror 41, where it is inverted to left-handed circularly polarized light. The left-handed circularly polarized light inverted by the half mirror 41 passes through the lens 42 and enters the retardation plate 43, where it is converted to 90° linearly polarized light. The 90° linearly polarized light emerging from the retardation plate 43 passes through the reflective polarizer 44 with a transmission axis of 90° and the lens 45, and is incident on the eye 10.

[0112] In this way, by using linearly polarized light and circularly polarized light, as well as a half mirror and a reflective polarizer, it is possible to selectively reflect or transmit light, thereby ensuring the optical path length within a limited space and shortening the focal length of optical equipment.

[0113] In the above example, right-handed circularly polarized light is used as the light that passes through the half mirror 41 and enters the lens 42, but left-handed circularly polarized light may also be used.

[0114] The configuration of the display device 30 and the optical device 40 shown in FIG. 8 is an example, and other configurations may also be used.

[0115] 9A illustrates a display panel 31 included in an electronic device of one embodiment of the present invention. The display panel 31 includes a pixel array 74, a circuit 75, and a circuit 76. The pixel array 74 includes pixels 70 arranged in columns and rows.

[0116] The pixel 70 can have a plurality of sub-pixels 71. The sub-pixels 71 have the function of emitting light for display.

[0117] In this specification, the smallest unit within a single "pixel" that performs independent operation is defined as a "sub-pixel" for convenience in the explanation, but "pixel" may be replaced with "region" and "sub-pixel" may be replaced with "pixel".

[0118] The subpixel 71 has a light-emitting device that emits visible light. As the light-emitting device, it is preferable to use an EL element such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials that the EL element has include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (quantum dot materials). Alternatively, an LED such as a micro LED can be used as the light-emitting device.

[0119] The circuit 75 and the circuit 76 are driver circuits for driving the sub-pixel 71. The circuit 75 can function as a source driver circuit, and the circuit 76 can function as a gate driver circuit. The circuits 75 and 76 can be, for example, shift register circuits.

[0120] 9B , a structure may be used in which the circuits 75 and 76 are provided in a layer 77, the pixel array 74 is provided in a layer 78, and the layers 77 and 78 overlap with each other. With this structure, a display device with a narrow frame can be formed.

[0121] Furthermore, the wiring length can be shortened and the wiring capacitance can be reduced by providing the driver circuit below the pixel array 74. Therefore, a display panel that can operate at high speed and with low power consumption can be obtained.

[0122] 9B , by dividing the circuit 75 and the circuit 76, it is possible to drive parts of the pixel array 74. For example, it is possible to rewrite part of the image data of the pixel array 74. It is also possible to operate parts of the pixel array 74 at different operating frequencies.

[0123] 9B are merely examples and may be changed as appropriate. Part of the circuit 75 and part of the circuit 76 may be formed on the same layer as the pixel array 74. The layer 77 may also include circuits such as a memory circuit, an arithmetic circuit, and a communication circuit.

[0124] In this configuration, for example, the layer 77 is provided on a single crystal silicon substrate, the circuits 75 and 76 are formed using transistors having silicon in their channel formation regions (hereinafter referred to as Si transistors), and the pixel circuits included in the pixel array 74 provided in the layer 78 are formed using transistors having metal oxide in their channel formation regions (hereinafter referred to as OS transistors). The OS transistor can be formed as a thin film and can be stacked on the Si transistor.

[0125] 9C , a layer 79 including an OS transistor may be provided between the layer 77 and the layer 78. In the layer 79, part of the pixel circuits included in the pixel array 74 can be formed using OS transistors. Alternatively, part of the circuits 75 and 76 can be formed using OS transistors. Alternatively, part of circuits such as a memory circuit, an arithmetic circuit, and a communication circuit that can be provided in the layer 77 can be formed using OS transistors.

[0126] 10A and 10B are diagrams showing an example of a glasses-type device having the display device 30 and optical device 40 shown in Fig. 1. Here, the combination of the display device 30 and the optical device 40 is shown by dashed lines as a display unit 92. The glasses-type device has two sets of display units 92, and may be called VR glasses or the like depending on the application.

[0127] The two display units 92 are incorporated into the housing 90 so that the surfaces of the lenses 45 are exposed on the inside. One display unit 92 is for the right eye, and the other display unit 92 is for the left eye, and by displaying images corresponding to the parallax on each display unit 92, the user can feel the three-dimensionality of the image.

[0128] Furthermore, the housing 90 or the band 91 may be provided with an input terminal and an output terminal. The input terminal can be connected to a cable for supplying a video signal from a video output device or the like, or for supplying power for charging a battery provided within the housing 90. The output terminal functions as, for example, an audio output terminal, and can be connected to earphones, headphones, or the like. Note that if the configuration is such that audio data can be output via wireless communication, or if audio is output from an external video output device, the audio output terminal need not be provided.

[0129] Furthermore, a wireless communication module and a storage module may be provided inside the housing 90 or the band 91. The wireless communication module performs wireless communication, and the content to be viewed can be downloaded and stored in the storage module. This allows the user to view the downloaded content offline.

[0130] A line-of-sight detection sensor may also be provided inside the housing 90. For example, operation buttons such as power on, power off, sleep, volume adjustment, channel change, menu display, selection, decision, and back, as well as operation buttons such as video playback, stop, pause, fast forward, and fast rewind, can be displayed, and each operation can be performed by visually recognizing the operation button.

[0131] By using the optical device 40 of one embodiment of the present invention for a glasses-type device, the electronic device can be small, thin, low in power consumption, and highly reliable.

[0132] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0133] In this embodiment, a structure example of a display panel that can be applied to an electronic device of one embodiment of the present invention will be described. The display panel exemplified below can be applied to the display panel 31 in Embodiment 1.

[0134] One embodiment of the present invention is a display panel having light-emitting elements (also referred to as light-emitting devices). The display panel has two or more pixels that emit light of different colors. Each pixel has a light-emitting element. Each light-emitting element has a pair of electrodes and an EL layer therebetween. The light-emitting element is preferably an organic EL element (organic electroluminescent element). Two or more light-emitting elements that emit light of different colors each have an EL layer containing a different light-emitting material. For example, a full-color display panel can be realized by having three types of light-emitting elements that emit red (R), green (G), or blue (B) light, respectively.

[0135] When fabricating a display panel with multiple light-emitting elements that emit different colors of light, it is necessary to form at least one layer containing a light-emitting material (light-emitting layer) in an island shape. To fabricate part or all of the EL layer separately, a method for forming island-shaped organic films by vapor deposition using a shadow mask such as a metal mask is known. However, this method can result in deviations from the design in the shape and position of the island-shaped organic film due to various factors, such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, metal mask deflection, and spreading of the contours of the deposited film due to vapor scattering, making it difficult to achieve high-resolution and high-aperture display panels. Furthermore, during vapor deposition, the contours of the layer can become blurred, resulting in thinning of the edges. In other words, the thickness of the island-shaped light-emitting layer can vary depending on the location. Furthermore, when fabricating large, high-resolution, or high-definition display panels, there is a concern that low dimensional accuracy of the metal mask and deformation due to heat can reduce manufacturing yield. Therefore, measures have been taken to artificially increase the resolution (also known as pixel density) by adopting special pixel arrangements such as a pentile array.

[0136] In this specification, the term "island-like" refers to a state in which two or more layers formed using the same material in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer is physically separated from an adjacent light-emitting layer.

[0137] In one embodiment of the present invention, an EL layer is processed into a fine pattern by photolithography without using a shadow mask such as a fine metal mask (FMM). This makes it possible to realize a display panel with high definition and a large aperture ratio, which have been difficult to achieve until now. Furthermore, because different EL layers can be formed separately, a display panel with extremely vivid images, high contrast, and high display quality can be realized. Note that, for example, the EL layer may be processed into a fine pattern by using both a metal mask and photolithography.

[0138] Furthermore, the EL layer can be partially or entirely separated physically. This can suppress leakage current between adjacent light-emitting elements through a layer shared between the light-emitting elements (also referred to as a common layer). This can prevent crosstalk caused by unintended light emission, thereby realizing a display panel with extremely high contrast. In particular, a display panel with high current efficiency at low luminance can be realized.

[0139] One embodiment of the present invention can also be a display panel that combines a white-emitting light-emitting element and a color filter. In this case, light-emitting elements provided in pixels (subpixels) that emit light of different colors can have the same structure, and all layers can be common layers. Furthermore, part or all of each EL layer can be separated by a process using photolithography. This suppresses leakage current through the common layer, thereby achieving a display panel with high contrast. In particular, in an element having a tandem structure in which multiple light-emitting layers are stacked via a highly conductive intermediate layer, leakage current through the intermediate layer can be effectively prevented, thereby achieving a display panel that combines high brightness, high definition, and high contrast.

[0140] When the EL layer is processed using photolithography, a portion of the light-emitting layer may be exposed, which may cause deterioration. Therefore, it is preferable to provide an insulating layer that covers at least the side surfaces of the island-shaped light-emitting layer. The insulating layer may also be configured to cover a portion of the top surface of the island-shaped EL layer. The insulating layer is preferably made of a material that has barrier properties against water and oxygen. For example, an inorganic insulating film that is less likely to diffuse water or oxygen can be used. This suppresses deterioration of the EL layer and realizes a highly reliable display panel.

[0141] Furthermore, there is a region (recess) between two adjacent light-emitting elements where the EL layer of either light-emitting element is not provided. When a common electrode, or a common electrode and a common layer, is formed to cover the recess, a phenomenon in which the common electrode is separated by a step at the edge of the EL layer (also called a step discontinuity) may occur, resulting in insulation of the common electrode on the EL layer. Therefore, it is preferable to use a configuration in which the local step located between two adjacent light-emitting elements is filled with a resin layer functioning as a planarizing film (also called LFP: Local Filling Planarization). The resin layer functions as a planarizing film. This suppresses step discontinuity in the common layer or common electrode, thereby achieving a highly reliable display panel.

[0142] A more specific example of the structure of a display panel according to one embodiment of the present invention will be described below with reference to the drawings.

[0143] 11A is a schematic top view of a display panel 100 according to one embodiment of the present invention. The display panel 100 includes a plurality of light-emitting elements 110R that exhibit red light, a plurality of light-emitting elements 110G that exhibit green light, and a plurality of light-emitting elements 110B that exhibit blue light over a substrate 101. In FIG. 11A , the light-emitting regions of the light-emitting elements are labeled with R, G, and B to easily distinguish the light-emitting elements from one another.

[0144] The light emitting elements 110R, 110G, and 110B are arranged in a matrix. Fig. 11A shows a so-called stripe arrangement in which light emitting elements of the same color are arranged in one direction. Note that the arrangement method of the light emitting elements is not limited to this, and arrangement methods such as an S-stripe arrangement, a delta arrangement, a Bayer arrangement, or a zigzag arrangement may also be used, or a pentile arrangement, a diamond arrangement, or the like may also be used.

[0145] It is preferable to use, for example, an organic light-emitting diode (OLED) or a quantum-dot light-emitting diode (QLED) as the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B. As the light-emitting substance contained in the EL element, not only an organic compound but also an inorganic compound (such as a quantum dot material) can be used.

[0146] 11A also shows a connection electrode 111C that is electrically connected to the common electrode 113. The connection electrode 111C is given a potential (e.g., an anode potential or a cathode potential) to be supplied to the common electrode 113. The connection electrode 111C is provided outside the display area where the light-emitting elements 110R and the like are arranged.

[0147] The connection electrode 111C can be provided along the periphery of the display area. For example, it may be provided along one side of the periphery of the display area, or it may be provided over two or more sides of the periphery of the display area. That is, when the top surface shape of the display area is rectangular, the top surface shape of the connection electrode 111C can be a strip shape (rectangle), an L-shape, a U-shape (square bracket shape), a square shape, or the like. In this specification, the top surface shape refers to the shape in a plan view, that is, the shape when viewed from above.

[0148] 11B and 11C are schematic cross-sectional views corresponding to dashed dotted lines A1-A2 and A3-A4 in Fig. 11A, respectively. Fig. 11B shows a schematic cross-sectional view of light-emitting element 110R, light-emitting element 110G, and light-emitting element 110B, and Fig. 11C shows a schematic cross-sectional view of connection portion 140 where connection electrode 111C and common electrode 113 are connected.

[0149] The light-emitting element 110R has a pixel electrode 111R, an organic layer 112R, a common layer 114, and a common electrode 113. The light-emitting element 110G has a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113. The light-emitting element 110B has a pixel electrode 111B, an organic layer 112B, a common layer 114, and a common electrode 113. The common layer 114 and the common electrode 113 are provided in common to the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B.

[0150] The organic layer 112R of the light-emitting element 110R contains a light-emitting organic compound that emits at least red light. The organic layer 112G of the light-emitting element 110G contains a light-emitting organic compound that emits at least green light. The organic layer 112B of the light-emitting element 110B contains a light-emitting organic compound that emits at least blue light. The organic layer 112R, the organic layer 112G, and the organic layer 112B can also be called EL layers, and each contains at least a layer containing a light-emitting substance (light-emitting layer).

[0151] Hereinafter, when describing matters common to light emitting element 110R, light emitting element 110G, and light emitting element 110B, they may be referred to as light emitting element 110. Similarly, when describing matters common to components distinguished by alphabets, such as organic layer 112R, organic layer 112G, and organic layer 112B, they may be described using symbols without the alphabets.

[0152] The organic layer 112 and the common layer 114 can each independently have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 112 can have a stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer from the pixel electrode 111 side, and the common layer 114 can have an electron injection layer.

[0153] The pixel electrode 111R, pixel electrode 111G, and pixel electrode 111B are provided for each light-emitting element. The common electrode 113 and common layer 114 are provided as a continuous layer common to each light-emitting element. A conductive film transmissive to visible light is used for either the pixel electrode or the common electrode 113, and a conductive film reflective to visible light is used for the other. By making each pixel electrode transmissive and the common electrode 113 reflective, a bottom-emission display panel can be achieved. Conversely, by making each pixel electrode reflective and the common electrode 113 transmissive, a top-emission display panel can be achieved. Note that by making both the pixel electrodes and the common electrode 113 transmissive, a dual-emission display panel can be achieved.

[0154] A protective layer 121 is provided on the common electrode 113 to cover the light emitting elements 110R, 110G, and 110B. The protective layer 121 has a function of preventing impurities such as water from diffusing from above into each light emitting element.

[0155] The edge of the pixel electrode 111 preferably has a tapered shape. When the edge of the pixel electrode 111 has a tapered shape, the organic layer 112 provided along the edge of the pixel electrode 111 can also have a tapered shape. By tapering the edge of the pixel electrode 111, the coverage of the organic layer 112 provided over the edge of the pixel electrode 111 can be improved. Furthermore, by tapering the side surface of the pixel electrode 111, foreign matter (for example, also referred to as dust or particles) during the manufacturing process can be easily removed by a process such as cleaning, which is preferable.

[0156] In this specification and the like, the term "tapered shape" refers to a shape in which at least a part of a side surface of a structure is inclined with respect to a substrate surface. For example, it is preferable that the structure has a region in which the angle between the inclined side surface and the substrate surface (also referred to as the taper angle) is less than 90°.

[0157] The organic layer 112 is processed into an island shape using photolithography. As a result, the angle between the top surface and the side surface of the organic layer 112 at its edge is close to 90 degrees. On the other hand, organic films formed using FMM or the like tend to be gradually thinner closer to the edge, and the top surface is formed in a sloped shape over a range of, for example, 1 μm to 10 μm, making it difficult to distinguish between the top surface and the side surface.

[0158] Between two adjacent light emitting elements, there are an insulating layer 125, a resin layer 126 and a layer 128.

[0159] Between two adjacent light-emitting elements, the side surfaces of the organic layers 112 face each other with the resin layer 126 sandwiched therebetween. The resin layer 126 is located between the two adjacent light-emitting elements and is provided so as to fill the ends of each organic layer 112 and the region between the two organic layers 112. The resin layer 126 has a smooth, convex upper surface, and a common layer 114 and a common electrode 113 are provided to cover the upper surface of the resin layer 126.

[0160] The resin layer 126 functions as a planarizing film that fills in the step between two adjacent light-emitting elements. By providing the resin layer 126, it is possible to prevent the common electrode 113 from being separated by the step at the end of the organic layer 112 (also called step disconnection), which would otherwise occur and result in insulation of the common electrode 113 on the organic layer 112.

[0161] An insulating layer containing an organic material can be suitably used as the resin layer 126. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, precursors of these resins, etc. can be used as the resin layer 126. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the resin layer 126.

[0162] Furthermore, a photosensitive resin can be used as the resin layer 126. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0163] The resin layer 126 may contain a material that absorbs visible light. For example, the resin layer 126 itself may be made of a material that absorbs visible light, or the resin layer 126 may contain a pigment that absorbs visible light. For example, the resin layer 126 may be a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0164] The insulating layer 125 is provided in contact with the side surface of the organic layer 112. The insulating layer 125 is also provided to cover the upper end portion of the organic layer 112. A portion of the insulating layer 125 is provided in contact with the upper surface of the substrate 101.

[0165] The insulating layer 125 is located between the resin layer 126 and the organic layer 112, and functions as a protective film to prevent the resin layer 126 from contacting the organic layer 112. If the organic layer 112 and the resin layer 126 come into contact with each other, the organic layer 112 may be dissolved by an organic solvent or the like used when forming the resin layer 126. Therefore, by providing the insulating layer 125 between the organic layer 112 and the resin layer 126, it is possible to protect the side surfaces of the organic layer 112.

[0166] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, by using an inorganic insulating film such as a metal oxide film, an aluminum oxide film, or a silicon oxide film formed by an ALD method as the insulating layer 125, an insulating layer 125 with few pinholes and excellent protection of the EL layer can be formed.

[0167] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0168] The insulating layer 125 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like. The insulating layer 125 is preferably formed by an ALD method because it has good coverage.

[0169] Furthermore, a reflective film (e.g., a metal film containing one or more selected from silver, palladium, copper, titanium, aluminum, etc.) may be provided between the insulating layer 125 and the resin layer 126, so that the light emitted from the light-emitting layer is reflected by the reflective film, thereby improving the light extraction efficiency.

[0170] The layer 128 is a remaining portion of a protective layer (also referred to as a mask layer or a sacrificial layer) for protecting the organic layer 112 during etching of the organic layer 112. The layer 128 can be made of a material that can be used for the insulating layer 125. In particular, it is preferable to use the same material for the layer 128 and the insulating layer 125 because a common processing device or the like can be used for both.

[0171] In particular, inorganic insulating films such as metal oxide films such as aluminum oxide films and hafnium oxide films, or silicon oxide films formed by the ALD method have few pinholes and therefore have an excellent function of protecting the EL layer, and can be suitably used for the insulating layer 125 and the layer 128.

[0172] The protective layer 121 may have, for example, a single-layer structure or a stacked structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 121 may be made of a semiconductor material or a conductive material such as indium gallium oxide, indium zinc oxide, indium tin oxide, or indium gallium zinc oxide.

[0173] The protective layer 121 may also be a laminated film of an inorganic insulating film and an organic insulating film. For example, a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This allows the upper surface of the organic insulating film to be flat, improving the coverage of the inorganic insulating film thereon and enhancing the barrier properties. Furthermore, since the upper surface of the protective layer 121 is flat, when a structure (e.g., a color filter, a touch sensor electrode, a lens array, etc.) is provided above the protective layer 121, the influence of uneven shapes caused by the structure below can be reduced, which is preferable.

[0174] 11C shows a connection portion 140 where the connection electrode 111C and the common electrode 113 are electrically connected. In the connection portion 140, an opening is provided in the insulating layer 125 and the resin layer 126 above the connection electrode 111C. The connection electrode 111C and the common electrode 113 are electrically connected through the opening.

[0175] 11C shows a connection portion 140 where the connection electrode 111C and the common electrode 113 are electrically connected, but the common electrode 113 may be provided on the connection electrode 111C via the common layer 114. In particular, when a carrier injection layer is used for the common layer 114, the electrical resistivity of the material used for the common layer 114 is sufficiently low and the common layer 114 can be formed thin, so there are many cases where no problem occurs even if the common layer 114 is located at the connection portion 140. This allows the common electrode 113 and the common layer 114 to be formed using the same shielding mask, thereby reducing manufacturing costs.

[0176] [Configuration Example 2] The following describes a display panel having a configuration that is partially different from that of the above-described configuration example 1. Note that parts common to the above-described configuration example 1 will be referred to, and descriptions thereof may be omitted.

[0177] 12A shows a schematic cross-sectional view of the display panel 100a. The display panel 100a differs from the display panel 100 mainly in that the light-emitting elements have a different configuration and that the display panel 100a has colored layers.

[0178] The display panel 100a includes a light-emitting element 110W that emits white light. The light-emitting element 110W includes a pixel electrode 111, an organic layer 112W, a common layer 114, and a common electrode 113. The organic layer 112W emits white light. For example, the organic layer 112W may be configured to include two or more light-emitting materials whose emitted light colors are complementary to each other. For example, the organic layer 112W may be configured to include a light-emitting organic compound that emits red light, a light-emitting organic compound that emits green light, and a light-emitting organic compound that emits blue light. Alternatively, the organic layer 112W may be configured to include a light-emitting organic compound that emits blue light and a light-emitting organic compound that emits yellow light.

[0179] The organic layers 112W are separated between two adjacent light-emitting elements 110W. This makes it possible to suppress leakage current flowing between adjacent light-emitting elements 110W via the organic layers 112W, thereby suppressing crosstalk caused by the leakage current. As a result, a display panel with high contrast and color reproducibility can be realized.

[0180] An insulating layer 122 that functions as a planarizing film is provided on the protective layer 121, and a coloring layer 116R, a coloring layer 116G, and a coloring layer 116B are provided on the insulating layer 122.

[0181] The insulating layer 122 can be an organic resin film or an inorganic insulating film with a flattened upper surface. The insulating layer 122 forms the surface on which the colored layers 116R, 116G, and 116B are formed, and therefore, a flat upper surface of the insulating layer 122 allows the thickness of the colored layers 116R and the like to be uniform, thereby improving color purity. However, if the thickness of the colored layers 116R and the like is uneven, the amount of light absorption varies depending on the location of the colored layer 116R, which may result in a decrease in color purity.

[0182] Configuration Example 3 FIG. 12B shows a schematic cross-sectional view of a display panel 100b.

[0183] The light-emitting element 110R has a pixel electrode 111, a conductive layer 115R, an organic layer 112W, and a common electrode 113. The light-emitting element 110G has a pixel electrode 111, a conductive layer 115G, an organic layer 112W, and a common electrode 113. The light-emitting element 110B has a pixel electrode 111, a conductive layer 115B, an organic layer 112W, and a common electrode 113. The conductive layer 115R, the conductive layer 115G, and the conductive layer 115B each have light-transmitting properties and function as an optical adjustment layer.

[0184] A microresonator (microcavity) structure can be realized by using a film that reflects visible light for the pixel electrode 111 and a film that is both reflective and transparent to visible light for the common electrode 113. In this case, by adjusting the thicknesses of the conductive layers 115R, 115G, and 115B so as to provide optimal optical path lengths, even when the organic layer 112 that emits white light is used, light of different wavelengths that are intensified can be obtained from the light-emitting elements 110R, 110G, and 110B.

[0185] Furthermore, colored layers 116R, 116G, and 116B are provided on the optical paths of the light emitting elements 110R, 110G, and 110B, respectively, so that light with high color purity can be obtained.

[0186] An insulating layer 123 is provided to cover the edges of the pixel electrode 111, the conductive layer 115R, the conductive layer 115G, and the conductive layer 115B. The insulating layer 123 preferably has tapered edges. Providing the insulating layer 123 can improve coverage by the organic layer 112W, the common electrode 113, the protective layer 121, and the like formed thereon.

[0187] The organic layer 112W and the common electrode 113 are each provided as a continuous film common to each light-emitting element, which is preferable because it can greatly simplify the manufacturing process of the display panel.

[0188] Here, it is preferable that the edge of the pixel electrode 111 has a shape that is nearly vertical. This allows a steeply inclined portion to be formed on the surface of the insulating layer 123, and it is possible to form a thin portion in a part of the organic layer 112W that covers this portion, or to divide a part of the organic layer 112W. Therefore, it is possible to suppress leakage current that occurs through the organic layer 112W between adjacent light-emitting elements without processing the organic layer 112W using a photolithography method or the like.

[0189] The above is a description of an example of the configuration of the display panel.

[0190] [Pixel Layout] The following mainly describes pixel layouts that are different from that shown in Fig. 11A. There are no particular limitations on the arrangement of light-emitting elements (sub-pixels), and various methods can be applied.

[0191] Examples of the top surface shape of the sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. Here, the top surface shape of the sub-pixel corresponds to the top surface shape of the light-emitting region of the light-emitting element.

[0192] An S-stripe arrangement is applied to the pixel 150 shown in Fig. 13A. The pixel 150 shown in Fig. 13A is composed of three sub-pixels, namely, light-emitting elements 110a, 110b, and 110c. For example, the light-emitting element 110a may be a blue light-emitting element, the light-emitting element 110b may be a red light-emitting element, and the light-emitting element 110c may be a green light-emitting element.

[0193] The pixel 150 shown in FIG. 13B includes a light-emitting element 110a having a generally trapezoidal or triangular top surface shape with rounded corners, a light-emitting element 110b having a generally trapezoidal or triangular top surface shape with rounded corners, and a light-emitting element 110c having a generally rectangular or hexagonal top surface shape with rounded corners. Furthermore, the light-emitting element 110a has a larger light-emitting area than the light-emitting element 110b. In this manner, the shape and size of each light-emitting element can be determined independently. For example, the more reliable the light-emitting element, the smaller the size can be. For example, the light-emitting element 110a may be a green light-emitting element, the light-emitting element 110b may be a red light-emitting element, and the light-emitting element 110c may be a blue light-emitting element.

[0194] The pixels 124a and 124b shown in Fig. 13C are arranged in a Pentile arrangement. Fig. 13C shows an example in which a pixel 124a having light-emitting elements 110a and 110b and a pixel 124b having light-emitting elements 110b and 110c are arranged alternately. For example, the light-emitting element 110a may be a red light-emitting element, the light-emitting element 110b may be a green light-emitting element, and the light-emitting element 110c may be a blue light-emitting element.

[0195] The pixels 124a and 124b shown in Figures 13D and 13E are arranged in a delta configuration. The pixel 124a has two light-emitting elements (light-emitting elements 110a and 110b) in the top row (first row) and one light-emitting element (light-emitting element 110c) in the bottom row (second row). The pixel 124b has one light-emitting element (light-emitting element 110c) in the top row (first row) and two light-emitting elements (light-emitting elements 110a and 110b) in the bottom row (second row). For example, the light-emitting element 110a may be a red light-emitting element, the light-emitting element 110b may be a green light-emitting element, and the light-emitting element 110c may be a blue light-emitting element.

[0196] FIG. 13D shows an example in which each light-emitting element has a substantially rectangular top surface shape with rounded corners, and FIG. 13E shows an example in which each light-emitting element has a circular top surface shape.

[0197] 13F shows an example in which light-emitting elements of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper edges of two light-emitting elements arranged in a column direction (e.g., light-emitting elements 110a and 110b, or light-emitting elements 110b and 110c) are misaligned. For example, light-emitting element 110a may be a red light-emitting element, light-emitting element 110b may be a green light-emitting element, and light-emitting element 110c may be a blue light-emitting element.

[0198] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the light-emitting element may be polygonal with rounded corners, elliptical, circular, or the like.

[0199] Furthermore, in a method for manufacturing a display panel according to one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material for the EL layer and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape that deviates from the desired shape during processing. As a result, the top surface shape of the EL layer may become a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the EL layer.

[0200] In order to form the top surface of the EL layer into a desired shape, a technique for correcting a mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0201] This concludes the description of the pixel layout.

[0202] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0203] Embodiment 3 In this embodiment, another structural example of a display panel that can be applied to an electronic device of one embodiment of the present invention will be described.

[0204] The display panel of this embodiment is a high-definition display panel, and is particularly suitable for use as the display section of VR devices such as head-mounted displays, and wearable devices that can be worn on the head, such as glasses-type AR devices.

[0205] 14A shows a perspective view of a display module 280. The display module 280 has a display panel 200A and an FPC 290. Note that the display panel included in the display module 280 is not limited to the display panel 200A, and may be any of display panels 200B to 200F described below.

[0206] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is an area for displaying an image.

[0207] 14B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0208] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 14B. The pixel 284a has a light-emitting element 110R that emits red light, a light-emitting element 110G that emits green light, and a light-emitting element 110B that emits blue light.

[0209] The pixel circuit portion 283 has a plurality of pixel circuits 283a arranged periodically. Each pixel circuit 283a is a circuit that controls the light emission of three light-emitting devices included in one pixel 284a. One pixel circuit 283a may be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a may be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display panel.

[0210] The circuit portion 282 includes a circuit for driving each pixel circuit 283a in the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like. Furthermore, a transistor provided in the circuit portion 282 may constitute a part of the pixel circuit 283a. That is, the pixel circuit 283a may be composed of a transistor included in the pixel circuit portion 283 and a transistor included in the circuit portion 282.

[0211] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, etc. from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0212] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are provided overlapping the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a be arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20,000 ppi or less, or 30,000 ppi or less.

[0213] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so even when the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0214] [Display Panel 200A] The display panel 200A shown in FIG. 15 includes a substrate 301, light-emitting elements 110R, 110G, and 110B, a capacitor 240, and a transistor 310.

[0215] Substrate 301 corresponds to substrate 291 in FIGS. 14A and 14B.

[0216] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as one of a source and a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0217] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0218] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0219] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0220] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0221] An insulating layer 255a is provided to cover the capacitor 240, an insulating layer 255b is provided over the insulating layer 255a, and an insulating layer 255c is provided over the insulating layer 255b.

[0222] An inorganic insulating film can be preferably used for each of the insulating layers 255a, 255b, and 255c. For example, it is preferable to use a silicon oxide film for the insulating layer 255a and the insulating layer 255c, and a silicon nitride film for the insulating layer 255b. This allows the insulating layer 255b to function as an etching protection film. In this embodiment, an example is shown in which part of the insulating layer 255c is etched to form a recess, but the insulating layer 255c does not necessarily have to have a recess.

[0223] The light emitting elements 110R, 110G, and 110B are provided over the insulating layer 255c. Embodiment 2 can be referred to for the structures of the light emitting elements 110R, 110G, and 110B.

[0224] The display panel 200A has a separate light-emitting device for each emitted color, so there is little change in chromaticity between low-luminance and high-luminance emission. Furthermore, because the organic layers 112R, 112G, and 112B are spaced apart from one another, crosstalk between adjacent subpixels can be suppressed even in a high-resolution display panel. This makes it possible to realize a high-resolution display panel with high display quality.

[0225] In the region between adjacent light emitting elements, an insulating layer 125, a resin layer 126, and a layer 128 are provided.

[0226] The pixel electrodes 111R, 111G, and 111B of the light-emitting element are electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layers 255a, 255b, and 255c, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0227] A protective layer 121 is provided on the light emitting elements 110R, 110G, and 110B. A substrate 170 is attached to the protective layer 121 with an adhesive layer 171.

[0228] There is no insulating layer covering the upper end of each pixel electrode 111 between two adjacent pixel electrodes 111. This allows the distance between adjacent light-emitting elements to be extremely narrow, resulting in a high-definition or high-resolution display panel.

[0229] 16 has a stacked structure of a transistor 310A and a transistor 310B, each of which has a channel formed in a semiconductor substrate. Note that in the following description of the display panel, descriptions of parts that are the same as those of the display panel described above may be omitted.

[0230] The display panel 200B has a structure in which a substrate 301B provided with a transistor 310B, a capacitor 240, and a light-emitting device and a substrate 301A provided with a transistor 310A are bonded together.

[0231] Here, an insulating layer 345 is provided on the lower surface of the substrate 301B, and an insulating layer 346 is provided on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. The insulating layers 345 and 346 can be made of an inorganic insulating film that can be used for the protective layer 121 or the insulating layer 332.

[0232] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and an insulating layer 345. Here, it is preferable to provide an insulating layer 344 that covers the side surface of the plug 343 and functions as a protective layer.

[0233] Furthermore, in the substrate 301B, a conductive layer 342 is provided below the insulating layer 345. The conductive layer 342 is embedded in the insulating layer 335, and the lower surfaces of the conductive layer 342 and the insulating layer 335 are flattened. The conductive layer 342 is electrically connected to a plug 343.

[0234] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is embedded in the insulating layer 336, and the upper surfaces of the conductive layer 341 and the insulating layer 336 are flattened.

[0235] It is preferable to use the same conductive material for the conductive layers 341 and 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable to use copper for the conductive layers 341 and 342. This allows for the application of Cu-Cu (copper-copper) direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0236] [Display Panel 200C] A display panel 200C shown in FIG. 17 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347.

[0237] 17 , by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Alternatively, for example, solder may be used as the bump 347. An adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0238] [Display Panel 200D] The display panel 200D shown in FIG. 18 differs from the display panel 200A mainly in the configuration of the transistors.

[0239] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0240] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0241] Substrate 331 corresponds to substrate 291 in FIGS. 14A and 14B.

[0242] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0243] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0244] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film exhibiting semiconductor characteristics. A pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0245] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like into the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0246] An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264. An insulating layer 323 in contact with the top surface of the semiconductor layer 321 and a conductive layer 324 are buried in the opening. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0247] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0248] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0249] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably has a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and a part of the upper surface of the conductive layer 325, and a conductive layer 274b in contact with the upper surface of the conductive layer 274a. In this case, it is preferable to use a conductive material through which hydrogen and oxygen do not easily diffuse as the conductive layer 274a.

[0250] Note that the structure of the transistor included in the display panel of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0251] The transistor 320 has a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the transistor may be driven by supplying the same signal to them. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0252] The crystallinity of a semiconductor material used for a semiconductor layer of a transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0253] The band gap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. Use of a metal oxide with a wide band gap can reduce the off-state current of the OS transistor.

[0254] The metal oxide preferably contains at least indium or zinc, and more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc.

[0255] Alternatively, the semiconductor layer of the transistor may contain silicon, such as amorphous silicon or crystalline silicon (such as low-temperature polysilicon or single-crystal silicon).

[0256] Examples of metal oxides that can be used in the semiconductor layer include indium oxide, gallium oxide, and zinc oxide. The metal oxide preferably contains two or three elements selected from indium, element M, and zinc. The element M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. In particular, the element M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0257] In particular, as the metal oxide used in the semiconductor layer, it is preferable to use an oxide containing indium, gallium, and zinc (also referred to as IGZO). Alternatively, it is preferable to use an oxide containing indium, tin, and zinc (also referred to as ITZO (registered trademark)). Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, aluminum, and zinc (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium, aluminum, gallium, and zinc (also referred to as IAGZO).

[0258] When the metal oxide used in the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such an In-M-Zn oxide include a composition of In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1.2 or thereabouts, In:M:Zn=1:3:2 or thereabouts, In:M:Zn=1:3:4 or thereabouts, In:M:Zn=2:1:3 or thereabouts, In:M:Zn=3:1:2 or thereabouts, In:M:Zn=4:2: Examples of such compositions include a composition of In:M:Zn=4:2:4.1 or a composition of In:M:Zn=5:1:3 or a composition of In:M:Zn=5:1:6 or a composition of In:M:Zn=5:1:7 or a composition of In:M:Zn=5:1:8 or a composition of In:M:Zn=6:1:6 or a composition of In:M:Zn=5:2:5 or a composition of In:M:Zn=5:2:5. Note that a composition of a similar ratio includes a range of ±30% of the desired atomic ratio.

[0259] For example, when describing a composition having an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0260] The semiconductor layer may also have two or more metal oxide layers with different compositions. For example, a stacked structure of a first metal oxide layer having an In:M:Zn=1:3:4 (atomic ratio) or a composition similar thereto and a second metal oxide layer having an In:M:Zn=1:1:1 (atomic ratio) or a composition similar thereto provided on the first metal oxide layer is preferably used. Gallium or aluminum is particularly preferably used as the element M.

[0261] Alternatively, for example, a stacked structure of any one selected from indium oxide, indium gallium oxide, and IGZO and any one selected from IAZO, IAGZO, and ITZO (registered trademark) may be used.

[0262] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS, nanocrystalline (nc)-OS, and the like.

[0263] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current (also referred to as off-state current) in an off state, and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display panel.

[0264] Furthermore, to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the emission luminance of the light-emitting device.

[0265] Furthermore, when the transistor operates in the saturation region, the change in source-drain current of an OS transistor is smaller than that of a Si transistor in response to a change in gate-source voltage. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a larger number of gray levels to be displayed in the pixel circuit.

[0266] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0267] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "reduced power consumption," "increased light emission luminance," "multiple gray levels," "suppressed variations in light-emitting devices," and the like.

[0268] [Display Panel 200E] A display panel 200E illustrated in FIG. 19 has a stacked structure of a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed.

[0269] The transistor 320A, the transistor 320B, and the surrounding configuration can refer to the display panel 200D.

[0270] Although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0271] [Display Panel 200F] A display panel 200F shown in FIG. 20 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide is formed.

[0272] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and the transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0273] The transistor 320 can be used as a transistor that forms a pixel circuit. The transistor 310 can be used as a transistor that forms a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) that drives the pixel circuit. The transistors 310 and 320 can be used as transistors that form various circuits such as an arithmetic circuit or a memory circuit.

[0274] With this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, making it possible to make the display panel smaller than when driving circuits are provided around the periphery of the display area.

[0275] [Display Panel 200G] The display panel 200G shown in FIG. 21 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301, a transistor 320A in which a semiconductor layer in which a channel is formed contains metal oxide, and a transistor 320B.

[0276] The transistor 320A can be used as a transistor that constitutes a pixel circuit. The transistor 310 can be used as a transistor that constitutes a pixel circuit or a transistor that constitutes a driver circuit (gate line driver circuit, source line driver circuit) for driving the pixel circuit. The transistor 320B may be used as a transistor that constitutes a pixel circuit or a transistor that constitutes the driver circuit. The transistor 310, the transistor 320A, and the transistor 320B can be used as transistors that constitute various circuits such as an arithmetic circuit or a memory circuit.

[0277] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0278] 10: eye, 30: display device, 31: display panel, 32: linear polarizer, 33: retardation plate, 40: optical device, 41: half mirror, 42: lens, 43: retardation plate, 44: reflective polarizer, 45: lens, 46: neutral density filter, 70: pixel, 71: sub-pixel, 74: pixel array, 75: circuit, 76: circuit, 77: layer, 78: layer, 79: layer, 90: housing, 91: band, 92: display unit, 100a: display panel, 100b: display panel, 100: display panel, 101: substrate, 110a: light-emitting element, 110B: light-emitting element, 110b: light-emitting element, 110c: light-emitting element element, 110G: light-emitting element, 110R: light-emitting element, 110W: light-emitting element, 110: light-emitting element, 111B: pixel electrode, 111C: connection electrode, 111G: pixel electrode, 111R: pixel electrode, 111: pixel electrode, 112B: organic layer, 112G: organic layer, 112R: organic layer, 112W: organic layer, 112: organic layer, 113: common electrode, 114: common layer, 115B: conductive layer, 115G: conductive layer, 115R: conductive layer, 116B: colored layer, 116G: colored layer, 116R: colored layer, 121: protective layer, 122: insulating layer, 123: insulating layer, 124a: pixel, 124b: pixel, 12 5: insulating layer, 126: resin layer, 128: layer, 140: connection portion, 150: pixel, 170: substrate, 171: adhesive layer, 200A: display panel, 200B: display panel, 200C: display panel, 200D: display panel, 200E: display panel, 200F: display panel, 200G: display panel, 240: capacitor, 241: conductive layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 255c: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug, 274a: conductive layer, 274b: conductive layer, 274: plug, 280: display module, 281: display section, 282: circuit section, 283a: pixel circuit, 283: pixel circuit section, 284a: pixel, 284: pixel section, 285: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate, 301A: substrate, 301B: substrate, 301: substrate, 310A: transistor, 310B: transistor, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer,320A: transistor, 320B: transistor, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342: conductive layer, 343: plug, 344: insulating layer, 345: insulating layer, 346: insulating layer, 347: bump, 348: adhesive layer,

Claims

1. It has a display panel and optical equipment, The aforementioned optical instrument is The first function is to concentrate the light emitted by the display panel and project it towards the user's eyes, A second function that partially reduces the brightness of the light emitted by the aforementioned display panel, It has, From the central area of ​​the field of view to the edge of the field of view, the rate of decrease in the brightness of the light emitted by the display panel is continuously increased so that it can be seen. The optical instrument has a light-reducing filter, The aforementioned light-reducing filter has regions where the transmittance decreases continuously from the inside to the outside. An electronic device in which, when the transmittance of the light-reducing filter corresponding to the central region is 1, the transmittance of the light-reducing filter corresponding to the edge of the field of view is 0.3 or more and 0.7 or less.

2. In claim 1, The optical instrument has a half mirror, The aforementioned half-mirror is an electronic device having regions where the transmittance decreases continuously from the inside to the outside.

3. In claim 1 or 2, The aforementioned central region is an electronic device in which the field of view is in a range of 20° to 40°, including the center of the field of view.

4. In claim 1 or 2, The aforementioned display panel is an electronic device having an organic EL element.