Light source device

Abstract

This light source device comprises: one or more first light source parts, one or more second light source parts, and a light-shielding member disposed between the first light source parts and the second light source parts. The first light source parts each have two or more first laminated bodies in each of which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are laminated in a first direction. The second light source parts each have one or more second laminated bodies in each of which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are laminated in a first direction. In the first light source part, the two or more first laminated bodies are continuously laminated in the first direction. The number of first laminated bodies included in the first light source part is smaller than the number of second laminated bodies included in the second light source part.

Description

light source device

[0001] The present disclosure relates to a light source device.

[0002] In recent years, mobile devices such as smartphones are equipped with cameras and flashes that include light source devices to provide fill light to the cameras. The camera's angle of view can be adjusted, for example, by digital zoom. Therefore, the light source device is required to emit fill light appropriately in accordance with the angle of view selectable by the camera.

[0003] Utility Model Registration No. 3148493

[0004] An object of an embodiment of the present disclosure is to provide a light source device that can emit appropriate auxiliary light.

[0005] A light source device according to an embodiment of the present disclosure includes one or more first light source units, one or more second light source units, and a light-shielding member disposed between the first light source unit and the second light source unit. The first light source unit includes two or more first stacked bodies in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked along a first direction. The second light source unit includes one or more second stacked bodies in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked along the first direction. In the first light source unit, the two or more first stacked bodies are stacked continuously along the first direction. The number of the first stacked bodies included in the first light source unit is greater than the number of the second stacked bodies included in the second light source unit.

[0006] A light source device according to an embodiment of the present disclosure includes one or more first light source units, one or more second light source units, and a light-shielding member disposed between the first light source units and the second light source units. The first light source units include two or more first stacked bodies each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The second light source units include one or more second stacked bodies each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. In the first light source units, the two or more first stacked bodies are stacked continuously along a stacking direction of the first stacked bodies. The number of first stacked bodies included in the first light source units is greater than the number of second stacked bodies included in the second light source units.

[0007] According to the embodiments of the present disclosure, a light source device capable of emitting appropriate auxiliary light can be realized.

[0008] FIG. 1 is a cross-sectional view showing a light source device according to a first embodiment. FIG. 2 is a top view showing the light source device according to the first embodiment. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2. FIG. 4 is a diagram showing the operation of the light source device according to the first embodiment. FIG. 5A is a top view showing a light source device according to a first modified example of the first embodiment. FIG. 5B is a top view showing a light source device according to a second modified example of the first embodiment. FIG. 6A is a top view showing a light source device according to a third modified example of the first embodiment. FIG. 6B is a top view showing a light source device according to a fourth modified example of the first embodiment. FIG. 7 is a top view showing a light source device according to a second embodiment. FIG. 8 is a cross-sectional view showing a light source device according to a third embodiment. FIG. 9 is a cross-sectional view showing a light source device according to a fourth embodiment. FIG. 10 is a cross-sectional view showing a light source device according to a modified example of the fourth embodiment. FIG. 11 is a cross-sectional view showing a light source device according to a fifth embodiment. FIG. 12 is a top view showing a light source device according to a sixth embodiment. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 12 , illustrating the effects of the sixth embodiment. FIG. 14A is a top view showing a light source device according to a first modified example of the sixth embodiment. FIG. 14B is a top view showing a light source device according to a second modified example of the sixth embodiment. FIG. 15A is a top view showing a light source device according to a third modified example of the sixth embodiment. FIG. 15B is a top view showing a light source device according to a fourth modified example of the sixth embodiment. FIG. 16 is a top view showing a light source device according to the seventh embodiment. FIG. 17 is a cross-sectional view showing a light source device according to the eighth embodiment. FIG. 18 is a cross-sectional view showing a light source device according to a first modified example of the eighth embodiment. FIG. 19 is a cross-sectional view showing a light source device according to a second modified example of the eighth embodiment. FIG. 20A is a cross-sectional view showing a light source device according to the ninth embodiment. FIG. 20B is a cross-sectional view showing a light source device according to a first modified example of the ninth embodiment. FIG. 20C is a cross-sectional view showing a light source device according to a second modified example of the ninth embodiment. Fig. 20D is a cross-sectional view showing a light source device according to a third modified example of the ninth embodiment. Fig. 21 is a cross-sectional view showing a light source device according to a tenth embodiment. Fig. 22A is a cross-sectional view showing a manufacturing method of a light source device according to an eleventh embodiment.Fig. 22B is a cross-sectional view showing a method for manufacturing the light source device according to the 11th embodiment. Fig. 22C is a cross-sectional view showing a method for manufacturing the light source device according to the 11th embodiment. Fig. 22D is a cross-sectional view showing a method for manufacturing the light source device according to the 11th embodiment. Fig. 22E is a cross-sectional view showing a method for manufacturing the light source device according to the 11th embodiment.

[0009] The light source device according to this embodiment is used, for example, as a light source for a flash (electroflash). The configuration and functions of the light source device will be described in detail below, taking as an example a light source device that is installed together with a camera in a mobile terminal such as a smartphone and used as a flash light source for image capture. Note that in this specification, the term "angle of view" refers to the range in which an image can be captured on an image sensor, i.e., the range captured on the image sensor, expressed as an angle.

[0010] <First embodiment> Fig. 1 is a cross-sectional view showing a light source device according to this embodiment. Fig. 2 is a top view showing a light source device according to this embodiment. Fig. 3 is a cross-sectional view taken along line III-III in Fig. 2. Note that each drawing is a schematic view, and has been appropriately emphasized and simplified. Furthermore, the dimensional ratios of the components in each drawing do not necessarily match. In some cases, an end view showing only a cut surface is used as a cross-sectional view. This also applies to other drawings described later. In the drawings, a portion of the light emitted by the first light source unit may be indicated by a two-dot chain line arrow, and a portion of the light emitted by the second light source unit may be indicated by a dashed line arrow.

[0011] As shown in FIGS. 1 to 3 , the light source device 1 according to this embodiment includes one or more first light source units 10 and one or more second light source units 20. The first light source unit 10 includes two or more first stacked bodies, each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The two or more first stacked bodies are continuously stacked along the stacking direction of the first stacked bodies. In this embodiment, the first light source unit 10 includes two or more first stacked bodies, each including a p-type semiconductor layer as a first conductivity type semiconductor layer, an active layer, and an n-type semiconductor layer as a second conductivity type semiconductor layer, stacked along the first direction. The second light source unit 20 includes one or more second stacked bodies, each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. In this embodiment, the second light source unit 20 has one or more second stacks in which a p-type semiconductor layer which is a first conductivity type semiconductor layer, an active layer, and an n-type semiconductor layer which is a second conductivity type semiconductor layer are stacked along a first direction.

[0012] For ease of explanation, the present specification employs an XYZ Cartesian coordinate system. The direction in which the semiconductor layers are stacked is referred to as the "first direction Z." Furthermore, of the two directions in which the first light source unit 10 and the second light source unit 20 are arranged, one is referred to as the "second direction X" and the other is referred to as the "third direction Y." Within the first direction Z, the direction in which the semiconductor layers are stacked is also referred to as the "upper" direction, and the opposite direction is also referred to as the "lower" direction. However, these expressions are also for convenience and are unrelated to the direction of gravity. In this specification, a top view refers to viewing an object from the main light-emitting surface side of the first light source unit and the second light source unit (in other words, the first direction Z side).

[0013] In addition to these, the light source device 1 may also include a wiring board 80 , a light blocking member 70 , a lens member 40 , a first power supply circuit 61 , and a second power supply circuit 62 .

[0014] As shown in FIG. 2 , in this embodiment, one first light source unit 10 and eight second light source units 20 are arranged on a wiring substrate 80. The first light source unit 10 is lightly hatched, and the second light source units 20 are not hatched. In a top view, the one first light source unit 10 and the eight second light source units 20 are arranged in a matrix of 3 rows and 3 columns, constituting a light-emitting region 50. In a top view, the first light source unit 10 and the second light source units 20 are rectangular and have approximately the same size (i.e., area), and the shape of the light-emitting region 50 is also rectangular. The area of ​​each of the first light source unit 10 and the second light source units 20 in a top view can be changed as appropriate depending on the size of the light source device 1 in a top view and the number of light source units, but may be, for example, 0.001 mm ２ More than 1.5 mm ２ In the light-emitting region 50, not all of the first light source units 10 and second light source units 20 are necessarily lit at all times, and it is possible to control the first light source units 10 and each of the second light source units 20 (hereinafter collectively referred to as "light source units") individually or in groups. Note that in FIG. 2, the lens member 40, the first power supply circuit 61, and the second power supply circuit 62 are omitted from the illustration in order to make the drawing easier to see.

[0015] The first light source unit 10 is disposed in a central region of the light-emitting region 50. The second light source unit 20 is disposed in a peripheral region of the light-emitting region 50. The "central region of the light-emitting region 50" refers to a region that includes the center of the light-emitting region 50 and is away from the outer edge of the light-emitting region 50. The "peripheral region of the light-emitting region 50" refers to a region that is disposed around the central region and includes the outer edge of the light-emitting region 50. Therefore, when viewed from above, two or more second light source units 20 are disposed with the first light source unit 10 between them.

[0016] The first light source unit 10 will be described. As shown in FIGS. 2 and 3 , the first light source unit 10 includes a first laminate 11 and a first laminate 12. That is, the first light source unit 10 includes two first laminates. In the first light source unit 10, the first laminate 11 and the first laminate 12 are stacked along a first direction Z (in other words, the stacking direction of the first laminate). The first light source unit 10 may also include an n-side electrode 15 n, a p-side electrode 15 p, and a first wavelength conversion member 16. In addition to these, the first light source unit 10 may further include a first translucent member 17.

[0017] In the first stacked body 11, a p-type semiconductor layer 11p, an active layer 11a, and an n-type semiconductor layer 11n are stacked along the first direction Z. In the first stacked body 12, a p-type semiconductor layer 12p, an active layer 12a, and an n-type semiconductor layer 12n are stacked along the first direction Z. As a result, the first light source unit 10 including the first stacked body 11 and the first stacked body 12 includes a light-emitting diode (LED). As shown in FIG. 3 , in the first light source unit 10, the p-type semiconductor layer 12p, the active layer 12a, the n-type semiconductor layer 12n, the p-type semiconductor layer 11p, the active layer 11a, and the n-type semiconductor layer 11n are stacked in this order along the first direction Z.

[0018] The first stacked body 11 and the first stacked body 12 are continuously stacked along the first direction Z. In this embodiment, "continuously stacked" means that the first stacked body 11 and the first stacked body 12 are in direct contact with each other via a semiconductor layer. In this embodiment, the p-type semiconductor layer 11p of the first stacked body 11 and the n-type semiconductor layer 12n of the first stacked body 12 are in contact with each other. The first stacked body 11 and the first stacked body 12 may be joined via a semiconductor layer such as a tunnel junction layer. This allows multiple first stacked bodies to be stacked, and the number of active layers of the light source unit can be increased as desired. The tunnel junction layer will be described later.

[0019] The first laminate 11 and the first laminate 12 may not be stacked continuously, but may be joined via a conductive member such as an electrode. In this case, the electrode may be a transparent electrode made of ITO (indium tin oxide) or the like, or may be an electrode made of metal. Even in this configuration, multiple first laminates can be stacked, and therefore the number of active layers in the light source unit can be increased as desired.

[0020] An n-side electrode 15n is provided in contact with the n-type semiconductor layer 11n of the first stack 11, and the n-type semiconductor layer 11n is connected to the wiring substrate 80 by the n-side electrode 15n. A p-side electrode 15p is provided in contact with the p-type semiconductor layer 12p of the first stack 12, and the p-type semiconductor layer 12p is connected to the wiring substrate 80 by the p-side electrode 15p. In this specification, "connection" means electrical connection. The n-side electrode 15n and the p-side electrode 15p may be connected to the wiring substrate 80 via a bonding material. The bonding material is, for example, solder, a gold-tin alloy (AuSn), or an anisotropic conductive film (ACF).

[0021] The n-side electrode 15n and the p-side electrode 15p are connected to a first power supply circuit 61 provided on the wiring substrate 80. The first power supply circuit 61 supplies a first voltage V1 to the first stack 11 and the first stack 12 connected in series.

[0022] A first wavelength conversion member 16 is disposed on the first laminate 11. The first wavelength conversion member 16 is a member that receives light emitted from at least one first laminate (the first laminate 11 and the first laminate 12) included in the first light source unit 10 and emits wavelength-converted light. The first wavelength conversion member 16 has at least a wavelength conversion substance. For example, the first wavelength conversion member 16 may have a light-transmitting material and a wavelength conversion substance, and the wavelength conversion substance may be dispersed in the light-transmitting material. The light-transmitting material may be, for example, an organic material such as a silicone resin or an epoxy resin, or an inorganic material such as glass. The wavelength conversion substance may be, for example, a wavelength conversion substance described below. The first wavelength conversion member 16 may contain titanium oxide (TiO ２ ), silica (SiO ２ ), alumina (Al ２ O ３ ) etc. A bonding member may be disposed between the first stacked body 11 and the first wavelength conversion member 16.

[0023] A first light-transmissive member 17 may be disposed on the first wavelength conversion member 16. The first light-transmissive member 17 is disposed for the purposes of dispersing light emitted from the first stacked body 11 or the first stacked body 12, or both, and light emitted from the first wavelength conversion member 16, and protecting these members. The first light-transmissive member 17 includes a resin material. The first light-transmissive member 17 may also include, for example, a filler that scatters light in the resin material. The resin material includes, for example, a silicone resin or an epoxy resin. The filler may include, for example, titanium oxide, silica, alumina, or a combination thereof.

[0024] The second light source unit 20 will be described. The second light source unit 20 includes one second stacked body 21. As shown in Fig. 3 , in the second light source unit 20, a p-type semiconductor layer 21p, an active layer 21a, and an n-type semiconductor layer 21n are stacked in this order in the first direction Z. As a result, the second light source unit 20 including the second stacked body 21 includes a light-emitting diode (LED).

[0025] The second light source unit 20 may also have an n-side electrode 25n, a p-side electrode 25p, and a second wavelength conversion member 26. In addition to these, the second light source unit 20 may further have a second translucent member 27. The second translucent member 27 may be disposed on the second wavelength conversion member 26. The second translucent member 27 is disposed for the purposes of dispersing light emitted from the second stacked body 21 or the second stacked body 22, or both, and light emitted from the second wavelength conversion member 26, and protecting these components. A bonding member may be disposed between the second stacked body 21 and the second wavelength conversion member 26. The materials of the second wavelength conversion member 26 and the second translucent member 27 are, for example, the same as the materials of the first wavelength conversion member 16 and the first translucent member 17, respectively. However, the contents of the wavelength conversion substance may be different from each other.

[0026] An n-side electrode 25n is provided in contact with the n-type semiconductor layer 21n of the second laminate 21, and the n-type semiconductor layer 21n is connected to the wiring substrate 80 by the n-side electrode 25n. A p-side electrode 25p is provided in contact with the p-type semiconductor layer 21p of the second laminate 21, and the p-type semiconductor layer 21p is connected to the wiring substrate 80 by the p-side electrode 25p. The n-side electrode 25n and the p-side electrode 25p may be bonded to the wiring substrate 80 via the bonding material described above. The n-side electrode 25n and the p-side electrode 25p are connected to the second power supply circuit 62 via the wiring substrate 80. The second power supply circuit 62 supplies a second voltage V2 to the second light source unit 20.

[0027] It is preferable to use nitride semiconductors as the materials for the first stacked body 11, the first stacked body 12, and the second stacked body 21. This allows efficient excitation of the wavelength converting substance contained in the first wavelength converting member 16 and the second wavelength converting member 26. Nitride semiconductors are mainly represented by the general formula In ｘ Al ｙ Ga １－ｘ－ｙ N (0≦x, 0≦y, x+y≦1). The emission peak wavelength of the light emitted by the first stack 11 and the first stack 12, and the second stack 21 (in other words, the first light source unit 10 and the second light source unit 20) is preferably in the range of 400 nm to 490 nm, more preferably 440 nm to 475 nm, from the viewpoints of luminous efficiency, excitation of the wavelength conversion substance, and the color mixing relationship with the emission. Note that light may be emitted in the range of 500 nm to 570 nm, or 600 nm to 650 nm. The peak wavelengths or colors of the light emitted by the first stack 11 and the first stack 12, and the second stack 21 may be substantially the same, or at least one of the peak wavelengths or colors of the light may be different. The first light source unit and the second light source unit may each include a laser diode (LD). In this embodiment, the first conductivity type semiconductor layer is a p-type semiconductor layer and the second conductivity type semiconductor layer is an n-type semiconductor layer, but the first conductivity type semiconductor layer may be an n-type semiconductor layer and the second conductivity type semiconductor layer may be a p-type semiconductor layer.

[0028] The wavelength converting material contained in the first wavelength converting member 16 and the second wavelength converting member 26 may be, for example, an yttrium aluminum garnet phosphor (e.g., (Y, Gd) ３ (Al, Ga) ５ O １２ :Ce), lutetium aluminum garnet phosphors (e.g., Lu ３ (Al, Ga) ５ O １２ :Ce), terbium aluminum garnet phosphors (e.g., Tb ３ (Al, Ga) ５ O １２ :Ce), CCA-based phosphors (e.g., Ca １０ (P.O. ４ ) ６ Cl ２ :Eu), SAE-based phosphors (e.g., Sr ４ Al １４ O ２５ :Eu), chlorosilicate phosphors (e.g., Ca ８ MgSi ４ O １６ Cl ２ :Eu), silicate-based phosphors (e.g., (Ba, Sr, Ca, Mg) ２ SiO ４ :Eu), β-sialon-based phosphors (e.g., (Si, Al) ３ (O, N) ４ :Eu) or α-sialon-based phosphor (e.g., Ca(Si,Al) １２ (O, N) １６ oxynitride phosphors such as (La,Y) ３ Si ６ N １１ :Ce), BSESN-based phosphors (e.g., (Ba, Sr) ２ Si ５ N ８ :Eu), SLA-based phosphors (e.g., SrLiAl ３ N ４ :Eu), CASN-based phosphors (e.g., CaAlSiN ３ :Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN ３ nitride-based phosphors such as KSF-based phosphors (e.g., K２ SiF ６ :Mn), KSAF-based phosphors (e.g., K ２ (Si １－ｘ Al ｘ ) F ６－ｘ :Mn where x satisfies 0<x<1) or MGF-based phosphor (for example, 3.5MgO.0.5MgF ２ GeO ２ Fluoride-based phosphors such as (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I) and quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I) ３ Here, FA and MA represent formamidinium and methylammonium, respectively.), II-VI quantum dots (e.g., CdSe), III-V quantum dots (e.g., InP), or quantum dots with a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se) ２ ) etc. can be used.

[0029] For example, the first laminate 11 and the first laminate 12 emit blue light. The wavelength converting material contained in the first wavelength converting member 16 absorbs part of the blue light emitted by the first laminate 11 and the first laminate 12 and emits yellow light. As a result, the first light source unit 10 as a whole emits white light that is a mixture of blue light and yellow light. Note that the first wavelength converting member 16 may emit green light and red light by appropriately selecting a wavelength converting material. As a result, the first light source unit 10 as a whole emits white light that is a mixture of blue light, green light, and red light.

[0030] Similar to the above-described first light source unit 10, for example, the second laminate 21 emits blue light. The wavelength conversion material contained in the second wavelength conversion member 26 absorbs a portion of the blue light emitted by the second laminate 21 and emits yellow light. As a result, the second light source unit 20 as a whole emits white light that is a mixture of blue light and yellow light. Note that the second wavelength conversion member 26 may also emit green light and red light by appropriately selecting a wavelength conversion material. As a result, the second light source unit 20 as a whole emits white light that is a mixture of blue light, green light, and red light.

[0031] In this embodiment, a first power supply circuit 61 is provided for each first light source unit 10, and a second power supply circuit 62 is provided for each second light source unit 20. Therefore, in this embodiment, one first power supply circuit 61 and eight second power supply circuits 62 are provided. This allows the light source device 1 to control the first light source unit 10 and each second light source unit 20 independently of each other. Note that it is sufficient to provide at least one second power supply circuit 62 for multiple second light source units 20.

[0032] The differences between the first light source unit 10 and the second light source unit 20 will be described. As described above, in this embodiment, the first light source unit 10 has two first stacks, and the second light source unit 20 has one second stack. Therefore, the number of first stacks included in the first light source unit 10 is greater than the number of second stacks included in the second light source unit 20. Note that the number of first stacks included in the first light source unit 10 may be two or more, and the number of second stacks included in the second light source unit 20 may be one or more. In this embodiment, if the same amount of current is supplied to the first light source unit 10 and the second light source unit 20, the amount of light emitted by the first light source unit 10 is theoretically approximately twice the amount of light emitted by the second light source unit 20.

[0033] In order to supply the same amount of current to the first light source unit 10 and the second light source unit 20, it is preferable that the first voltage V1 supplied by the first power supply circuit 61 to the first light source unit 10 be at least twice the second voltage V2 supplied by the second power supply circuit 62 to the second light source unit 20.

[0034] When the light emission amount of the first light source unit 10 is greater than that of the second light source unit 20, the content of the wavelength conversion material contained in the first wavelength conversion member 16 is preferably greater than the content of the wavelength conversion material contained in the second wavelength conversion member 26. This makes it possible to arrange wavelength conversion materials appropriate for the light emission amount of each light source unit, thereby reducing deterioration of the wavelength conversion material due to light. Furthermore, it is possible to adjust the difference in the emission color between the light source units caused by differences in the light emission amount of each light source unit.

[0035] Furthermore, a wavelength converting material may be contained in a bonding member provided between the first laminate 11 and the first wavelength converting member 16, or a third wavelength converting member containing a wavelength converting material may be further disposed on the first light-transmissive member 17. In these configurations as well, the amount of wavelength converting material required for the first light source unit 10 can be adjusted.

[0036] The light-shielding member 70 is disposed between the first light source unit 10 and the second light source unit 20 and on the outer periphery of the light-emitting region 50. The first light source unit 10, the second light source unit 20, and the light-shielding member 70 covering them constitute a light-emitting unit 71. The light-shielding member 70 may be a member that reflects light emitted by the first light source unit 10 and the second light source unit 20 and directs it in the first direction Z, or a member that absorbs light emitted by the first light source unit 10 and the second light source unit 20 and that intersects the first direction Z. The light-shielding member 70 is made of, for example, a white or black resin material. The light-shielding member 70 has, for example, a filler dispersed in the resin material. When the light-shielding member 70 is white, a light-scattering substance such as titanium oxide, silica, or alumina is used as the filler. When the light-shielding member 70 is black, a light-absorbing substance such as carbon or paint is used as the filler. The resin material includes, for example, a silicone resin or an epoxy resin.

[0037] The lens member 40 is a member through which light emitted by the first light source unit 10 and light emitted by the second light source unit 20 passes. The lens member 40 is only required to include at least a lens 41. In this embodiment, the lens member 40 is made of a light-transmitting material and includes the lens 41 and a support portion 42 that supports the lens 41, and the lens 41 and the support portion 42 are integrally formed. An air layer 72 is interposed between the light-emitting unit 71 and the lens member 40. The lens member 40 is formed of, for example, a resin such as polycarbonate resin, acrylic resin, epoxy resin, or silicone resin, or glass.

[0038] The lens 41 is a biconvex lens. The lens 41 has an incident surface on the side of the first light source unit 10 and the second light source unit 20, and an exit surface on the opposite side to the incident surface (the first direction Z side). In a top view, the lens 41 covers the light-emitting region 50. A central axis 41c of the lens 41 extends in the first direction Z. In a top view, the central axis 41c of the lens 41 overlaps with the center of the light-emitting region 50. The light-emitting region 50 is, for example, two-fold symmetric with respect to the central axis 41c of the lens 41.

[0039] 1, the lower end of the support portion 42 is joined to the wiring substrate 80. An adhesive member may be interposed between the lens member 40 and the wiring substrate 80. The adhesive member includes, for example, an epoxy resin or a silicone resin.

[0040] The wiring board 80 is a member on which the first light source unit 10 and the second light source unit 20 are mounted. As shown in FIG. 1 , a lens member 40 may be disposed on the wiring board 80. In the wiring board 80, wiring is provided inside and on the surface of an insulating base, and is electrically connected to the first power supply circuit 61 and the second power supply circuit 62. The insulating base may be made of, for example, polyimide resin, polyester resin, epoxy glass, BT resin (bismaleimide triazine resin), aluminum nitride (AlN), silicon nitride (Si ３ N ４ ) or alumina. The wiring is formed of a metal such as copper (Cu) or gold (Au). Note that an ASIC (Application Specific Integrated Circuit) substrate may also be used as the wiring substrate 80.

[0041] Next, the operation of the light source device according to this embodiment will be described. Fig. 4 is a diagram showing the operation of the light source device according to this embodiment. Note that in Fig. 4, the first light source unit 10, the second light source unit 20, the lens 41, and the wiring board 80 of the light source device 1 are shown for ease of explanation.

[0042] 2 and 3 , in the light source device 1 according to this embodiment, two first stacks (i.e., a first stack 11 and a first stack 12) are provided in the first light source unit 10 disposed in the central region of the light-emitting region 50, and one second stack 21 is provided in the second light source unit 20 disposed in the peripheral region of the light-emitting region 50. Therefore, when the same current is applied, the amount of light L1 emitted from one first light source unit 10 is greater than the amount of light L2 emitted from one second light source unit 20. Therefore, the light source device 1 has high luminous intensity in the first direction Z.

[0043] As shown in FIG. 4 , when the angle of view of the linked camera is wide, i.e., when the camera is shooting at a “wide angle,” the light source device 1 irradiates light onto a subject 101 that is relatively close to the light source device 1. In this case, the light source device 1 causes the first light source unit 10 and the second light source unit 20 to emit light, for example. The light L1 emitted by the first light source unit 10 and the light L2 emitted by the second light source unit 20 are focused by the lenses 41 of the lens member 40 and then spread over a wide angular range, irradiating the entire subject 101. In this case, the first current I1 supplied to the first light source unit 10 by the first power supply circuit 61 may be set to 30% to 70% of the second current I2 supplied to the second light source unit 20 by the second power supply circuit 62, so that the light emission amount of the first light source unit 10 is approximately the same as the light emission amount of each second light source unit 20.

[0044] When a camera is used to take a photograph, for example, using a telephoto lens, the telephoto lens has a long focal length and can magnify distant objects. Because the angle of view becomes smaller as distant objects are magnified, and the range that can be photographed becomes narrower, the light source device 1 only needs to emit light from the first light source unit 10 located in the central region of the light-emitting area 50. On the other hand, when a wide-angle lens is used to take a photograph, the wide-angle lens has a shorter focal length than a telephoto lens and can capture a larger angle of view. Therefore, the light source device 1 needs to emit light from both the first light source unit 10 and the second light source unit 20 located in the central and peripheral regions of the light-emitting area 50. When the angle of view of the linked camera is narrow, i.e., when the camera is photographing in "telephoto" mode, the light source device 1 irradiates light onto a subject 102 that is relatively far away from the light source device 1. In this case, for example, only the first light source unit 10 emits light, and the second light source unit 20 does not emit light. Light L1 emitted by the first light source unit 10 is focused by the lens 41 of the lens member 40, then spreads over a narrow angular range, and is irradiated onto the subject 102. Because the first light source unit 10 is provided with two first stacks (i.e., the first stack 11 and the first stack 12), the light L1 emitted by the first light source unit 10 has a large amount of light and can brightly illuminate the subject 102, which is farther away from the light source device 1 than the subject 101.

[0045] Next, the effects of this embodiment will be described. For example, in the "telephoto" range, which is a narrower illumination range of the light source device 1, the number of light source units contributing to illumination is smaller. However, the narrower the illumination range (i.e., the telephoto range), the greater the distance between the light source device 1 and the subject, requiring higher luminous intensity. In the light source device 1 of this embodiment, the number of light source units contributing to telephoto shooting (i.e., the first light source units 10) is smaller than the number of light source units contributing to wide-angle shooting (i.e., the sum of the first light source units 10 and the second light source units 20). However, because the number of first stacks included in the first light source units 10 is greater than the number of second stacks included in the second light source units 20, bright illumination is possible. As described above, the light source device 1 can vary the intensity distribution of the emitted light when the linked camera is shooting at a "wide angle" and when shooting at a "telephoto" angle. This allows light to be emitted over a wide angular range in the "wide angle" range while brightly illuminating a narrow angular range in the "telephoto" range. In this way, the light source device 1 can brightly illuminate the subject even if the angle of view of the linked camera changes.

[0046] If the second light source unit includes the same number of second stacks as the number of first stacks that can provide an appropriate amount of light for "telephoto" photography, the power required to obtain a sufficient amount of light for "wide-angle" photography would be greater than if the number of second stacks were smaller than the number of first stacks, which could result in a decrease in luminous efficiency. Therefore, the light source device 1 of this embodiment, in which the number of first stacks is greater than the number of second stacks, can illuminate a subject with good luminous efficiency for wide-angle photography while providing the light amount required for telephoto photography. Thus, according to this embodiment, a light source unit with a large number of active layers is arranged in a specific location that requires a large amount of light, thereby enabling bright illumination of a subject.

[0047] Furthermore, in the light source device 1, the content of the wavelength conversion material contained in the first wavelength conversion member 16 may be greater than the content of the wavelength conversion material contained in the second wavelength conversion member 26. This makes it possible to make the color of the light emitted by the first light source unit 10 and the color of the light emitted by the second light source unit 20 approximately the same, even if the amount of light emitted by the first stack 11 and the first stack 12 is greater than the amount of light emitted by the second stack 21. Furthermore, it is possible to reduce the wavelength conversion material contained in the first wavelength conversion member 16 from deteriorating more quickly than the wavelength conversion material contained in the second wavelength conversion member 26.

[0048] The amount of wavelength converting substance contained in the first wavelength converting member 16 may be the same as the amount of wavelength converting substance contained in the second wavelength converting member 26, and the wavelength of the light emitted by the first laminate 11 and the first laminate 12 may be made different from the wavelength of the light emitted by the second laminate 21. This also makes it possible to make the chromaticity and color temperature of the light emitted by the first light source unit 10 approximately match the chromaticity and color temperature of the light emitted by the second light source unit 20.

[0049] <First Modification of First Embodiment> A first modification of the first embodiment will be described. Note that the same names and symbols as those in the first embodiment described above indicate the same or similar components, and detailed explanations will be omitted as appropriate. Furthermore, explanations and illustrations of components that are the same as those in the light source device 1 will be omitted as appropriate, and differences from the light source device 1 will be mainly described. This point also applies to the embodiments and modifications described below.

[0050] 5A is a top view showing a light source device according to this modification. As shown in FIG. 5A , in the light source device 1a according to this modification, the size of the first light source unit 10 is different from the size of the second light source unit 20 in a top view. Specifically, the area of ​​the first light source unit 10 is smaller than the area of ​​the second light source unit 20 in a top view. Furthermore, the four second light source units 20 arranged in the corners of the light-emitting region 50 are larger than the four second light source units 20 arranged to sandwich the first light source unit 10 along the first direction X or the second direction Y. For example, a large proportion of light from the light source units arranged in the corners becomes stray light without entering the lens 41. However, in the light-emitting device 1a according to this modification, the area of ​​the second light source units 20 arranged in the corners is larger, thereby increasing the amount of light entering the lens 41. Therefore, compared to the first embodiment, the amount of light emitted can be approximately equal throughout the entire light-emitting region 50. Other configurations, operations, and effects of this modification are similar to those of the first embodiment.

[0051] <Second Modification of First Embodiment> Fig. 5B is a top view showing a light source device according to this modification. As shown in Fig. 5B, in the light source device 1b according to this modification, the area of ​​the first light source unit 10 is larger than the area of ​​the second light source unit 20 when viewed from above. This increases the area of ​​the semiconductor layer, thereby increasing the electrical capacity and allowing a larger current to be supplied to the first light source unit 10, thereby improving the illuminance in the front direction (in other words, the first direction Z). The configuration, operation, and effects of this modification other than those described above are the same as those of the first embodiment.

[0052] <Third Modification of First Embodiment> Fig. 6A is a top view showing a light source device according to this modification. As shown in Fig. 6A, in a light source device 1c according to this modification, 17 first light source units 10 and second light source units 20 are arranged along the X direction in the light-emitting region 50, and 21 are arranged along the Y direction, constituting a light-emitting unit 71c. That is, a total of 357 light source units are arranged in a matrix of 21 rows and 17 columns. When viewed from above, the area of ​​each light source unit included in the light source device 1c is, for example, 0.001 mm ２ More than 0.1 mm ２ The following is the result.

[0053] Only one first light source unit 10 is provided in the central region of the light-emitting region 50, and the other 356 light source units are second light source units 20. In this way, for example, by increasing the number of light source units without changing the area of ​​the light-emitting unit as viewed from above, it is possible to precisely control the intensity distribution of light emitted from the light source device in accordance with the angle of view of the camera and the position of the subject. Other than the above, the configuration, operation, and effects of this modified example are the same as those of the first embodiment.

[0054] <Fourth Modification of First Embodiment> Fig. 6B is a top view showing a light source device according to this modification. As shown in Fig. 6B, in a light source device 1d according to this modification, the light source units are also arranged in a matrix of 21 rows and 17 columns in the light-emitting region 50. Nine first light source units 10 are arranged in a matrix of 3 rows and 3 columns in the central region of the light-emitting region 50, and 348 second light source units 20 are arranged around the first light source units 10 and in the peripheral region of the light-emitting region 50.

[0055] In this modified example, nine first light source units 10 are arranged as a single group. In this case, one first power supply circuit 61 may be provided for each of the nine first light source units 10 constituting the single group, or one first power supply circuit 61 may be provided for each of the nine first light source units 10. Similarly, a single group may be formed by a plurality of second light source units 20, resulting in 348 second light source units 20 divided into multiple groups, and a second power supply circuit 62 may be provided for each group of second light source units 20. As a result, control is easier even when the number of light source units increases. In this modified example, when nine first light source units 10 are arranged as a single group and one first power supply circuit 61 is provided for each first light source unit 10, the number of first light source units 10 contributing to telephotography can be adjusted during telephoto shooting, thereby increasing the tolerance for telephoto magnification. Other configurations, operations, and effects of this modified example are similar to those of the first embodiment.

[0056] Second Embodiment FIG. 7 is a top view showing a light source device according to this embodiment. As shown in FIG. 7 , in the light source device 2 according to this embodiment, the light source units are not arranged in a matrix, but the light-emitting region 50 has an elliptical shape in a top view. The first light source unit 10 is arranged in a central region of the light-emitting region 50, and the second light source unit 20 is arranged in a peripheral region of the light-emitting region 50. Note that the arrangement of the light source units is not limited to this and may be, for example, radial or concentric. In the light source device 2 according to this embodiment, in which the light-emitting region 50 has an elliptical shape in a top view, the aspect ratio of the range irradiated with light emitted from the lens 41 and the aspect ratio of the angle of view can be made closer to each other than when, for example, the light-emitting region 50 is circular. Other configurations, operations, and effects of this embodiment are the same as those of the first embodiment.

[0057] 8 is a cross-sectional view showing a light source device according to this embodiment. As shown in Fig. 8, in the light source device 3 according to this embodiment, the configuration of the first light source unit 10a is different from the configuration of the first light source unit 10 in the first embodiment.

[0058] In the first light source unit 10a, the emission color of the first stacked body 11 and the emission color of the first stacked body 12 are different from each other. For example, the first stacked body 11 emits blue light, and the first stacked body 12 emits green light. The first light source unit 10a may be fabricated by continuously growing a semiconductor layer including the first stacked body 11 and a semiconductor layer including the first stacked body 12, or by bonding the first stacked body 11 and the first stacked body 12 that have been prepared separately.

[0059] Furthermore, in the first light source unit 10a, a tunnel junction layer 14 is provided between the first stacked body 11 and the first stacked body 12. The tunnel junction layer 14 is in contact with the p-type semiconductor layer 11p of the first stacked body 11 and the n-type semiconductor layer 12n of the first stacked body 12. The tunnel junction layer 14 includes at least one of a p-type semiconductor layer having a higher acceptor concentration than the acceptor concentration of the p-type semiconductor layer 11p and an n-type semiconductor layer having a higher donor concentration than the donor concentration of the n-type semiconductor layer 12n. In one example, the tunnel junction layer 14 includes a layer containing a high concentration of magnesium (Mg) and a layer containing a high concentration of silicon (Si). This allows for efficient transfer of electrons and holes.

[0060] Furthermore, in the first light source unit 10a, a common electrode 15m is provided on the n-type semiconductor layer 12n of the first stack 12, and the common electrode 15m is connected to the wiring substrate 80. The common electrode 15m is connected to the first power supply circuit 61a via the wiring substrate 80.

[0061] In the light source device 3, when only the active layer 11a is made to emit light, the common electrode 15m is used as the anode and the n-side electrode 15n is used as the cathode. When only the active layer 12a is made to emit light, the p-side electrode 15p is used as the anode and the common electrode 15m is used as the cathode. When both the active layer 11a and the active layer 12a are made to emit light, the p-side electrode 15p is used as the anode and the n-side electrode 15n is used as the cathode.

[0062] When the p-side electrode 15p is used as an anode and the n-side electrode 15n is used as a cathode, a forward voltage is applied to the active layer 11a of the first stack 11 and the active layer 12a of the first stack 12, and both the active layer 11a and the active layer 12a emit light. At this time, a reverse voltage is applied to the tunnel junction (pn junction) in the tunnel junction layer 14. As a result, electrons present in the valence band in the tunnel junction layer 14 are tunneled to the conduction band, causing a tunnel current to flow.

[0063] In the case where the first wavelength conversion member 16 contains a wavelength conversion material that absorbs blue light and emits yellow light, when only the active layer 11a is caused to emit light, the active layer 11a emits blue light, and part of the blue light incident on the first wavelength conversion member 16 is converted to yellow light and emitted. Therefore, the first light source unit 10a emits mixed light of blue light and yellow light. When only the active layer 12a is caused to emit light, the active layer 12a emits green light, and part of the green light incident on the first wavelength conversion member 16 is converted to yellow light and emitted. Therefore, the first light source unit 10a emits mixed light of green light and yellow light. When both the active layer 11a and the active layer 12a are caused to emit light, the first light source unit 10a emits mixed light of blue light, green light, and yellow light.

[0064] By controlling the current values ​​supplied to the active layers 11a and 12a and the on / off duty ratio, respectively, it is possible to adjust the chromaticity of the light obtained by the light emission from the active layers 11a and 12a. As described above, according to this embodiment, it is possible to adjust the color of the first light source unit 10a. The configuration, operation, and effects of this embodiment other than those described above are the same as those of the first embodiment.

[0065] Alternatively, three first laminates may be provided in the light source device 3, and each first laminate may emit red, green, and blue light. By adjusting the light emission amount of each first laminate, the degree of freedom in color adjustment can be increased.

[0066] 9 is a cross-sectional view showing a light source device according to the present embodiment. As shown in Fig. 9, in the light source device 4 according to the present embodiment, the configuration of the first light source unit 10b is different from the configuration of the first light source unit 10 in the first embodiment.

[0067] In the first light source unit 10b, the stacking order of the semiconductors in the first stack 12 is reversed compared to the first embodiment. Furthermore, the p-type semiconductor layer 12p of the first stack 12 and the p-type semiconductor layer 11p of the first stack 11 are integrated to form a single p-type semiconductor layer 10p. Therefore, the n-type semiconductor layer 12n, the active layer 12a, the p-type semiconductor layer 10p, the active layer 11a, and the n-type semiconductor layer 11n are stacked in this order from the wiring substrate 80 toward the first wavelength conversion member 16 (in other words, along the first direction Z). The p-side electrode 15p is provided in contact with the p-type semiconductor layer 10p. The first light source unit 10b includes two n-side electrodes: an n-side electrode 15n1 and an n-side electrode 15n2. The n-side electrode 15n1 is provided in contact with the n-type semiconductor layer 11n, and the n-side electrode 15n2 is provided in contact with the n-type semiconductor layer 12n. In FIG. 9, the p-type semiconductor layer 11p and the p-type semiconductor layer 12p are collectively shown as a p-type semiconductor layer 10p.

[0068] According to this embodiment, the two first stacks in the first light source unit 10 are connected in parallel. That is, the first stack 11, which includes the p-type semiconductor layer 10p, the active layer 11a, and the n-type semiconductor layer 11n, and the first stack 12, which includes the p-type semiconductor layer 10p, the active layer 12a, and the n-type semiconductor layer 12n, can be connected in parallel to the first power supply circuit 61. This allows the first voltage V1 driving the active layer 11a or the active layer 12a and the second voltage V2 driving the active layer 21a to be substantially the same, facilitating the configuration and control of the power supply circuit. Furthermore, if the first light source unit 10b includes the active layer 11a and the active layer 12a that emit light of different wavelengths, the light can be mixed. Other configurations, operations, and effects of this embodiment are similar to those of the first embodiment.

[0069] In addition, the light source device according to this embodiment may include both a first light source section in which two or more first laminates are connected in series, and a first light source section in which two or more first laminates are connected in parallel.

[0070] <Modification of the Fourth Embodiment> Fig. 10 is a cross-sectional view showing a light source device according to this modification. As shown in Fig. 10, in a light source device 4a according to this modification, the configuration of the first light source unit 10c is different from the configuration of the first light source unit 10b in the fourth embodiment. In addition, an ASIC substrate 81 is provided instead of the wiring substrate 80.

[0071] In the first light source unit 10c, the order of stacking semiconductors in the first stacked body 11 is different from that in the first embodiment. Also, the n-type semiconductor layer 12n of the first stacked body 12 and the n-type semiconductor layer 11n of the first stacked body 11 are integrated to form a single n-type semiconductor layer 10n1. Furthermore, a tunnel junction layer 14 and an n-type semiconductor layer 10n2 are stacked on the first stacked body 11.

[0072] That is, from the ASIC substrate 81 toward the first wavelength conversion member 16 (in other words, along the first direction Z), the p-type semiconductor layer 12p, the active layer 12a, the n-type semiconductor layer 10n1, the active layer 11a, the p-type semiconductor layer 11p, the tunnel junction layer 14, and the n-type semiconductor layer 10n2 are stacked in this order.

[0073] The first light source unit 10c includes a first electrode 15n1, a second electrode 15n2, and a third electrode 15p. The first electrode 15n1 is connected to the n-type semiconductor layer 10n1, and the second electrode 15n2 is connected to the n-type semiconductor layer 10n2. The third electrode 15p is connected to the p-type semiconductor layer 12p. The first electrode 15n1, the second electrode 15n2, and the third electrode 15p are connected to a first power supply circuit 61 or the like, to which the first electrode 15n1, the second electrode 15n2, and the third electrode 15p are connected, and the active layers 11a and 12a can be individually controlled for lighting. The second electrode 15n2 and the third electrode 15p are, for example, anode electrodes. The first electrode 15n1 is, for example, a cathode electrode.

[0074] In this modification, as in the fourth embodiment, the first stack 11 and the first stack 12 are connected in parallel in the first light source unit 10c. That is, the first stack 11 consisting of the p-type semiconductor layer 11p, the active layer 11a, and the n-type semiconductor layer 10n1 and the first stack 12 consisting of the p-type semiconductor layer 11p, the active layer 12a, and the n-type semiconductor layer 10n1 can be connected in parallel to the first power supply circuit 61. Furthermore, by arranging the first electrode 15n1 functioning as a cathode electrode on the n-type semiconductor layer 10n2, it is possible to spread the current along the XY plane. Other configurations, operations, and effects of this modification are similar to those of the fourth embodiment.

[0075] 11 is a cross-sectional view showing a light source device according to this embodiment. As shown in Fig. 11, in the light source device 5 according to this embodiment, the configurations of the first light source unit 10d and the second light source unit 20d are different from the configurations of the first light source unit 10 and the second light source unit 20 in the first embodiment.

[0076] The first light source unit 10d includes a first stack 11, a first stack 12, and a first stack 13, which are continuously stacked along the first direction Z. That is, the first light source unit 10d includes three first stacks. In the first stack 13, a p-type semiconductor layer 13p, an active layer 13a, and an n-type semiconductor layer 13n are stacked along the first direction Z. The p-side electrode 15p is provided in a position in contact with the p-type semiconductor layer 13p. Therefore, in the first light source unit 10d, the p-type semiconductor layer 13p, the active layer 13a, the n-type semiconductor layer 13n, the p-type semiconductor layer 12p, the active layer 12a, the n-type semiconductor layer 12n, the p-type semiconductor layer 11p, the active layer 11a, and the n-type semiconductor layer 11n are stacked in this order from the wiring substrate 80 toward the first wavelength conversion member 16.

[0077] The second light source unit 20d includes a second stack 21 and a second stack 22, which are continuously stacked along the first direction Z, similar to the first stack 11, the first stack 12, and the first stack 13. That is, the second light source unit 20d includes two second stacks. In the second stack 22, a p-type semiconductor layer 22p, an active layer 22a, and an n-type semiconductor layer 22n are stacked along the first direction Z. The p-side electrode 15p is connected to the p-type semiconductor layer 22p. Therefore, in the second light source unit 20d, the p-type semiconductor layer 22p, the active layer 22a, the n-type semiconductor layer 22n, the p-type semiconductor layer 21p, the active layer 21a, and the n-type semiconductor layer 21n are stacked in this order from the wiring substrate 80 toward the second wavelength conversion member 26 (in other words, along the first direction Z).

[0078] In the light source device 5, if the magnitude of the current supplied to the first light source unit 10d and the magnitude of the current supplied to the second light source unit 20d are equal, and if the materials, thicknesses, areas, etc. of the semiconductor layers included in the first light source unit 10d and the second light source unit 20d are similar, the ratio of the amount of light emitted by the first light source unit 10d to the amount of light emitted by the second light source unit 20d is approximately 3:2. In this case, the first voltage V1 supplied to the first light source unit 10d by the first power supply circuit 61 is set to be 3 / 2 times or more the second voltage V2 supplied to the second light source unit 20d by the second power supply circuit 62.

[0079] To express the relationship between the number of stacked layers and the voltage in each light source unit more generally, when the magnitude of the current supplied to the first light source unit 10d and the magnitude of the current supplied to the second light source unit 20d are equal, and the materials, thicknesses, areas, etc. of the semiconductor layers included in the first light source unit 10d and the second light source unit 20d are similar, the ratio (V1 / V2) of the first voltage V1 to the second voltage V2 is equal to or greater than the ratio (N1 / N2) of the number of stacked layers N1 of the first stacked layers in the first light source unit to the number of stacked layers N2 of the second stacked layers in the second light source unit. That is, (V1 / V2) ≧ (N1 / N2). In this embodiment, N1 is 3 and N2 is 2, so (V1 / V2) ≧ (3 / 2). In the first embodiment, N1 is 2 and N2 is 1, so (V1 / V2) ≧ (2 / 1) = 2. Other configurations, operations, and effects of this embodiment are similar to those of the first embodiment.

[0080] 12 is a top view showing a light source device according to this embodiment. As shown in Fig. 12, in the light source device 6 according to this embodiment, the arrangement of the first light source unit 10 and the second light source unit 20 is different from that of the first embodiment.

[0081] In the light source device 6, the light source units are arranged in a matrix of 3 rows and 3 columns to form the light-emitting region 50. When viewed from above, one first light source unit 10 is arranged at each of the four corners of the light-emitting region 50. That is, there are four first light source units 10. The second light source units 20 are arranged at positions excluding the four corners of the light-emitting region 50. That is, there are five second light source units 20.

[0082] Next, the operation of this embodiment will be described. FIG. 13 is a cross-sectional view illustrating the effect of this embodiment. As shown in FIG. 13 , most of the light Lc emitted from the light source units arranged in the central region of the light-emitting region 50 is incident on the lens 41 of the lens member 40. On the other hand, some of the light Le emitted from the light source units arranged in the corners of the light-emitting region 50 is incident on the support portion 42 of the lens member 40. The light that enters the support portion 42 becomes stray light, and most of it is unlikely to reach the subject. Therefore, if the light emission amounts of all the light source units were set to be approximately equal, the amount of light that enters the lens 41 from the light source units arranged in the corners of the light-emitting region 50 would be reduced, and the four corners of the area that can be irradiated with light by the light source device 1 (hereinafter, sometimes referred to as the "photography area") might become dark.

[0083] In the light source device 6, the first light source units 10 are arranged at the four corners of the light-emitting area 50. Because the light emission amount of the first light source units 10 is greater than that of the second light source units 20, the amount of light incident on the lens 41 can be increased, and the entire shooting area can be illuminated with reduced unevenness in light. Other configurations, operations, and effects of this embodiment are the same as those of the first embodiment.

[0084] <First Modification of Sixth Embodiment> Fig. 14A is a top view showing a light source device according to this modification. As shown in Fig. 14A, in a light source device 6a according to this modification, first light source units 10 are arranged at the four corners of a light-emitting region 50, and the area of ​​the first light source units 10 is larger than the area of ​​the second light source units 20 in a top view. This allows more light emitted from the four first light source units 10 arranged at the corners of the light-emitting region 50 to be incident on the lens 41. The configuration, operation, and effects of this modification other than those described above are the same as those of the sixth embodiment.

[0085] <Second Modification of Sixth Embodiment> Fig. 14B is a top view showing a light source device according to this modification. As shown in Fig. 14B, in a light source device 6b according to this modification, first light source units 10 are arranged at the four corners of a light-emitting region 50, and the area of ​​the second light source units 20 is larger than the area of ​​the first light source units 10 in a top view. In the light source device 6b, four first light source units 10 are arranged at the corners of the light-emitting region 50, so that light emitted from the four first light source units 10 can be efficiently incident on the lens 41. Furthermore, a second light source unit 20 with an area larger than the area of ​​the first light source units 10 is arranged in the central region of the light-emitting region 50, so that sufficient light can be obtained to illuminate the vicinity of the center of the imaging region. The configuration, operation, and effects of this modification other than those described above are the same as those of the sixth embodiment.

[0086] 15A is a top view showing a light source device according to this modification, in a light source device 6c according to this modification, a total of 357 light source units are arranged in a matrix of 21 rows and 17 columns in a light-emitting region 50.

[0087] One first light source unit 10 is provided at each of the four corners of the light-emitting region 50, and 353 second light source units 20 are arranged at positions other than the four corners. In this way, for example, if the area of ​​the light-emitting region 50 in a top view is approximately the same as the area of ​​the light-emitting region 50 of light source device 6b, by increasing the number of light source units as in light source device 6c, it is possible to precisely control the intensity distribution of light emitted from light source device 6c in accordance with the angle of view of the camera and the distance between light source device 6c and the subject. The configuration, operation, and effects of this modified example other than those described above are the same as those of the sixth embodiment.

[0088] <Fourth Modification of Sixth Embodiment> Fig. 15B is a top view showing a light source device according to this modification. As shown in Fig. 15B, in a light source device 6d according to this modification, light source units are arranged in a matrix of 21 rows and 17 columns in a light-emitting region 50. Nine first light source units 10 are arranged in a matrix of 3 rows and 3 columns at each of the four corners of the light-emitting region 50. That is, a total of 36 first light source units 10 are provided. 321 second light source units 20 are arranged at other positions.

[0089] In this modified example, nine first light source units 10 arranged at the corners of the light-emitting region 50 form one group. Only one first power supply circuit 61 may be provided for the nine first light source units 10 that form this one group. In this case, four first power supply circuits 61 are provided in the light source device 6d. Similarly, a plurality of second light source units 20 may be provided as one group, with a plurality of groups of second light source units 20, and a second power supply circuit 62 may be provided for each group of second light source units 20. As a result, control is easier even if the number of light source units increases. The configuration, operation, and effects of this modified example other than those described above are the same as those of the sixth embodiment.

[0090] Seventh Embodiment Fig. 16 is a top view showing a light source device according to this embodiment. As shown in Fig. 16, in a light source device 7 according to this embodiment, light source units are arranged in a matrix of 17 rows and 21 columns in a light-emitting region 50. Furthermore, one or more first light source units 10, one or more second light source units 20, and one or more third light source units 30 are provided in the light-emitting region 50. Note that, for ease of viewing, in Fig. 16, the first light source units 10 are indicated by thick hatching, the second light source units 20 are indicated by light hatching, and the third light source units 30 are not indicated by hatching.

[0091] The first light source unit 10 has three first stacks (i.e., first stack 11, first stack 12, and first stack 13) stacked along the first direction Z, similar to the first light source unit 10d shown in FIG. 11 . These three first stacks are connected in series. The second light source unit 20 has two second stacks (i.e., second stack 21 and second stack 22) stacked along the first direction Z, similar to the second light source unit 20d shown in FIG. 11 , and these are connected in series. The third light source unit 30 has one third stack. The third stack is a semiconductor stack in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are stacked along the first direction, similar to the second light source unit 20 shown in FIG. 2 . Therefore, when the magnitude of the current supplied to each light source unit is equal and the material, thickness, area, etc. of the semiconductor layer contained in each light source unit are similar, the ratio of the light emission amount of the first light source unit 10, the second light source unit 20, and the third light source unit 30 is approximately (3:2:1).

[0092] Nine first light source units 10 are arranged in three rows and three columns in the central region of the light-emitting region 50, with one first light source unit at each of the four corners of the light-emitting region 50. Fifty-four second light source units 20 are arranged surrounding the nine first light source units 10 arranged in the central region of the light-emitting region 50, with two columns on each side of the central region along the third direction Y and three columns on each side of the central region along the second direction X, for a total of 68 second light source units 20, with one column along each of the four sides of the light-emitting region 50 excluding the four corners. The third light source units 30 are arranged in a frame-like position in the light-emitting region 50 where the first light source units 10 and the second light source units 20 are not arranged. Therefore, 13 first light source units 10, 122 second light source units 20, and 222 third light source units 30 are arranged in the light-emitting region 50.

[0093] The effect of this embodiment is a combination of the effects of the first embodiment and the sixth embodiment. That is, light can be irradiated with reduced unevenness over a wide shooting area during wide-angle shooting, and a sufficient amount of light can be irradiated onto a distant subject during telephoto shooting. Specifically, not only are first light source units 10 with a high light emission level disposed at the corners of the light-emitting area 50, but second light source units 20 with the second highest light emission level after the first light source units 10 are disposed on the four sides of the light-emitting area 50. This allows sufficient light to be irradiated not only to the four corners of the shooting area but also to the outer periphery. Furthermore, the multiple second light source units 20 surrounding the group of first light source units 10 disposed in the central area of ​​the light-emitting area 50 can appropriately supplement the illumination light during telephoto shooting. Other configurations, operations, and effects of this embodiment are similar to those of the first embodiment.

[0094] 17 is a cross-sectional view showing a light source device according to this embodiment. As shown in Fig. 17, in a light source device 8 according to this embodiment, the first wavelength conversion member 16 is thicker than the second wavelength conversion member 26 in the first direction Z.

[0095] The first light source unit 10 has a substrate 10g. In this embodiment, the substrate 10g is a substrate for growing semiconductor layers from the n-type semiconductor layer 11n to the p-type semiconductor layer 12p, and is, for example, a sapphire substrate. The substrate 10g is in contact with the n-type semiconductor layer 11n. The second light source unit 20 has a substrate 20g. In this embodiment, the substrate 20g is a substrate for growing semiconductor layers from the n-type semiconductor layer 21n to the p-type semiconductor layer 22p, and is, for example, a sapphire substrate. After growing the semiconductor layers, the substrates 10g and 20g are thinned to a desired thickness. In this embodiment, the substrate 10g is thinner than the substrate 20g. Note that the substrates 10g and 20g are not limited to growth substrates, and may also be support substrates that support the semiconductor layers.

[0096] The type and concentration of the wavelength converting material in the first wavelength converting member 16 may be the same as the type and concentration of the wavelength converting material in the second wavelength converting member 26. In this case, the amount of the wavelength converting material contained in the first wavelength converting member 16 is greater than the amount of the wavelength converting material contained in the second wavelength converting member 26.

[0097] In the first direction Z, the upper surface of the first wavelength conversion member 16 is located at approximately the same position as the upper surface of the second wavelength conversion member 26. The thickness of the first light-transmissive member 17 is approximately equal to the thickness of the second light-transmissive member 27. Therefore, in the first direction Z, the upper surface of the first light-transmissive member 17 is located at approximately the same position as the upper surface of the second light-transmissive member 27.

[0098] The substrate 10g and the first wavelength conversion member 16 are joined via a first bonding member 18. The second light source unit 20 and the second wavelength conversion member 26 are joined via a second bonding member 28. The first bonding member 18 and the second bonding member 28 are, for example, adhesives made of a translucent resin. Note that the first bonding member 18 and the second bonding member 28 do not necessarily have to be provided.

[0099] According to this modification, by making the first wavelength conversion member 16 thicker than the second wavelength conversion member 26, it is possible to arrange an appropriate amount of wavelength conversion member on each of the first light source unit 10 and the second light source unit 20. This improves the uniformity of the emitted light.

[0100] Furthermore, in the first direction Z, the upper surface of the first light-transmissive member 17 is located at substantially the same position as the upper surface of the second light-transmissive member 27, so the light emission surface of the light source device 8 is flat. As a result, the light source device 8 can be easily handled in the mounting process.

[0101] Furthermore, in this embodiment, the substrate 10g is thinner than the substrate 20g. This makes it possible to reduce scattering and absorption of light by the substrate 10g in the first light source unit 10, which requires stronger light. Other configurations, operations, and effects of this embodiment are the same as those of the first embodiment.

[0102] 18 is a cross-sectional view showing a light source device according to this modification. A light source device 8a according to this modification is different from the light source device 8 according to the eighth embodiment in the configuration of the first wavelength conversion member.

[0103] As shown in FIG. 18 , the light source device 8a is provided with a first wavelength conversion member 16a. The first wavelength conversion member 16a has a wavelength conversion layer 16b and a wavelength conversion layer 16c. The wavelength conversion layer 16c is disposed between the substrate 10g and the wavelength conversion layer 16b. The configuration of the wavelength conversion layer 16b, i.e., the thickness and the type and concentration of the wavelength conversion material, may be the same as the configuration of the second wavelength conversion member 26. In this case, the concentration of the wavelength conversion material in the wavelength conversion layer 16c is higher than the concentration of the wavelength conversion material in the wavelength conversion layer 16b. Therefore, the amount of wavelength conversion material contained in the first wavelength conversion member 16a is greater than the amount of wavelength conversion material contained in the second wavelength conversion member 26.

[0104] In this modified example, by providing a wavelength conversion layer 16c with a high concentration of wavelength conversion material in the first wavelength conversion member 16a, it is possible to adjust the difference in the emission color between the light source units that occurs due to differences in the amount of light emitted by each light source unit.

[0105] Because the concentration of the wavelength conversion material in the wavelength conversion layer 16c is higher than that in the wavelength conversion layer 16b, when light from the first light source 10 is incident on the first wavelength converter 16a, the amount of heat generated in the wavelength conversion layer 16c is greater than that in the wavelength conversion layer 16b. However, because the wavelength conversion layer 16c is located closer to the substrate 10g, the semiconductor layer, and the wiring board 80 than the wavelength conversion layer 16b, heat dissipation via the substrate 10g, the semiconductor layer, and the wiring board 80 is high. This reduces the concentration of heat within the light source device 8a. Other configurations, operations, and effects of this modification are the same as those of the eighth embodiment.

[0106] <Second Modification of Eighth Embodiment> Fig. 19 is a cross-sectional view showing a light source device according to this modification. As shown in Fig. 19, a light source device 8b according to this modification differs from the light source device 8 according to the eighth embodiment in that the thickness of the substrate 10g is substantially equal to the thickness of the substrate 20g, and that the first wavelength conversion member 16 protrudes in the first direction Z with respect to the second wavelength conversion member 26.

[0107] According to this modification, light L2 emitted at a low angle from the second light source unit 20 can be reflected by the side surface of the light blocking member 70 arranged around the first wavelength conversion member 16 and made incident on the lens 41. As a result, the light utilization efficiency can be improved. Note that light L2 shown in FIG. 19 would be stray light if the first wavelength conversion member 16 did not protrude. Other configurations, operations, and effects of this modification are the same as those of the eighth embodiment.

[0108] 20A is a cross-sectional view showing a light source device according to this embodiment. As shown in Fig. 20A, the light source device 9 according to this embodiment differs from the first embodiment in the configuration of the lens member 40 and its surrounding area.

[0109] 20A , the light source device 9 is provided with a support member 45. The support member 45 fixes the lens member 40 to the wiring substrate 80. The support member 45 has a frame-like or annular shape extending in the first direction Z. In a top view, the support member 45 surrounds the light-emitting region 50. The lower surface of the support member 45 is bonded to the upper surface of the wiring substrate 80. The support portion 42 of the lens member 40 is bonded to the inner surface of the support member 45.

[0110] The support member 45 is made of a light-blocking material. The light-blocking material is, for example, a white or black resin material. In the resin material, a filler is contained in the base resin. The base resin includes, for example, polycarbonate resin, acrylic resin, silicone resin, or epoxy resin. When the resin material is made white, a light-scattering substance such as titanium oxide, silica, or alumina is used as the filler. When the resin material is made black, a light-absorbing substance such as carbon or paint is used as the filler.

[0111] According to this embodiment, stray light can be reduced by providing the light-blocking support member 45. Other configurations, operations, and effects of this embodiment are the same as those of the first embodiment.

[0112] 20B is a cross-sectional view showing a light source device according to this modification. As shown in Fig. 20B, the light source device 9a according to this modification has a different lens member shape from that of the first embodiment.

[0113] 20B, in the light source device 9a, a Fresnel lens is provided as the lens member 44. This allows the light source device 9a to be made thinner. In other words, the length of the light source device 9a in the first direction Z can be shortened. Other configurations, operations, and effects of this modified example are the same as those of the first embodiment.

[0114] <Second Modification of Ninth Embodiment> Fig. 20C is a cross-sectional view showing a light source device according to this modification. As shown in Fig. 20C, this modification is an example that combines the ninth embodiment and its first modification. That is, a light source device 9b according to this modification is provided with a support member 45 and a lens member 44 having a Fresnel lens shape, and the support member 45 fixes the lens member 44 to a wiring substrate 80. Other than the above, the configuration, operation, and effects of this modification are similar to those of the ninth embodiment and the first modification of the ninth embodiment.

[0115] <Third Modification of the Ninth Embodiment> Fig. 20D is a cross-sectional view showing a light source device according to this modification. As shown in Fig. 20D, in a light source device 9c according to this modification, three lenses 46a, 46b, and 46c are held by a support member 45. The three lenses 46a, 46b, and 46c may be bonded together with an adhesive member 47 such as resin or double-sided tape. The lenses 46a, 46b, and 46c are, for example, aspherical lenses. This allows for more precise control of the light irradiation by the light source device 9c. The number of lenses is not limited to three, and may be two or more. Other configurations, operations, and effects of this modification are the same as those of the ninth embodiment.

[0116] 21 is a cross-sectional view showing a light source device according to this embodiment. As shown in FIG. 21, a light source device 9 e according to this embodiment differs from the first embodiment in that the lens member 40 is disposed at a distance from the wiring substrate 80.

[0117] 21 , light source device 9e is disposed within a housing 91 of a mobile terminal 90 such as a smartphone. The lens member 40 is provided in the housing 91 of the mobile terminal 90. In other words, light source device 9e does not include a lens member 40. Specifically, a support portion 42 of the lens member 40 is joined to the inner surface of the housing 91 of the mobile terminal 90 with an adhesive member 47 such as resin or double-sided tape. The housing 91 has an opening, and a cover member 92 is disposed in the opening of the housing 91 so as to face the lens 41 of the lens member 40. The cover member 92 is a light-transmitting member made of, for example, glass or a resin material.

[0118] As a result, light emitted from the light source device 9e is condensed by the lens 41 of the lens member 40 provided in the housing 91, passes through the cover member 92, and is emitted to the outside of the mobile terminal 90. According to this embodiment, by utilizing the lens member 40 provided in the housing 91, it is possible to reduce the thickness and cost of the light source device 9e. Other configurations, operations, and effects of this embodiment are the same as those of the first embodiment.

[0119] Eleventh Embodiment This embodiment is an example of a method for manufacturing a light source device. FIGS. 22A to 22E are cross-sectional views showing a method for manufacturing a light source device according to this embodiment. In this embodiment, an example of manufacturing the light source device 1 according to the first embodiment will be described, but the same applies to manufacturing methods for light source devices according to other embodiments. Furthermore, in this embodiment, a method for manufacturing a light source device 1 including a first light source unit 10 having a first wavelength conversion member 16 and a second light source unit 20 having a second wavelength conversion member 26 will be described as an example, and the members included in the first light source unit 10 may be referred to as a first unit 19, and the members included in the second light source unit 20 may be referred to as a second unit 29. Note that translucent members are omitted from the illustration.

[0120] First, a first wavelength conversion sheet and a second wavelength conversion sheet each containing a wavelength conversion substance in a resin material are prepared, with the amount of wavelength conversion substance contained in the first wavelength conversion sheet being greater than the amount of wavelength conversion substance contained in the second wavelength conversion sheet.

[0121] 22A , a second wavelength conversion sheet is placed on a mount substrate 201, and in this state, the second wavelength conversion sheet is cut with, for example, a dicing blade or a laser to produce a plurality of second wavelength conversion members 26. If a second light-transmissive member 27 is to be provided, the second light-transmissive member 27 is bonded to the second wavelength conversion member 26 at this stage. Next, a plurality of second wavelength conversion members 26 are arranged in a matrix on the mount substrate 201. Note that, if a second light-transmissive member 27 is to be provided, the second light-transmissive sheet may be bonded to the second wavelength conversion sheet and then cut to produce a plurality of second wavelength conversion members 26 and a plurality of second light-transmissive members 27 simultaneously.

[0122] 22B , some of the second wavelength conversion members 26 are replaced with first wavelength conversion members 16 so as to be disposed at desired positions within the light-emitting region 50. That is, some of the second wavelength conversion members 26 to be replaced with the first wavelength conversion members 16 are selected and removed from the mount substrate 201, and the first wavelength conversion members 16 are disposed at the removed positions.

[0123] 22C , a first unit 19 including the first stack 11, the first stack 12, the p-side electrode 15 p, and the n-side electrode 15 n is placed on the first wavelength conversion member 16. A second unit 29 including the second stack 21, the p-side electrode 25 p, and the n-side electrode 25 n is placed on the second wavelength conversion member 26. That is, two types of units are placed depending on the type of wavelength conversion member. The first unit 19 and the second unit 29 may be bonded to the first wavelength conversion member 16 and the second wavelength conversion member 26, respectively, using an adhesive such as resin.

[0124] 22D , a light-shielding member 70 may be disposed on the mount substrate 201. The light-shielding member 70 integrally covers the structure made up of the first wavelength conversion member 16 and the first unit 19, and the structure made up of the second wavelength conversion member 26 and the second unit 29. Next, the upper surface of the light-shielding member 70 is ground to expose the p-side electrode 15 p, the n-side electrode 15 n, the p-side electrode 25 p, and the n-side electrode 25 n from the light-shielding member 70.

[0125] 22E , the light-shielding member 70 is diced to produce light-emitting units 71 each including one or more first light source units 10 and one or more second light source units 20. Each individual light-emitting unit 71 is used in one light source device 1 and includes multiple light source units. In this manner, the light source device 1 is manufactured.

[0126] The fabricated light-emitting section 71 (in other words, the light source device 1) may be mounted such that the p-side electrode 15p, the n-side electrode 15n, the p-side electrode 25p, and the n-side electrode 25n of the first light source section 10 and the second light source section 20 included in the light-emitting section 71 are connected to predetermined wiring on the wiring substrate 80. Next, the lens member 40 is attached to the wiring substrate 80 so that the lens 41 and the light-emitting section 71 face each other. This forms an air space 72 between the light-emitting section 71 and the lens member 40. In addition, the first power supply circuit 61 and the second power supply circuit 62 are connected to the wiring substrate 80. In this manner, the light source device 1 is fabricated, which includes the wiring substrate 80, the light-shielding member 70, the lens member 40, the first power supply circuit 61, and the second power supply circuit 62, as shown in FIGS. 1 to 3 .

[0127] In the above-described process for adjusting the content of the wavelength converting material contained in each of the first wavelength converting member 16 and the second wavelength converting member 26, although some of the second wavelength converting members 26 shown in FIG. 22B are replaced with the first wavelength converting member 16, the amounts of the wavelength converting material may be made different by other means. For example, instead of the above-described process, the second wavelength converting member 26 may be disposed in both the first unit 19 and the second unit 29, and the amount of the wavelength converting material may be increased by applying, for example, a resin containing the wavelength converting material to the second wavelength converting member 26 disposed in the first unit 19. This is approximately equivalent to disposing, in the first unit 19, a first wavelength converting member 16 containing a larger amount of wavelength converting material than the second wavelength converting member 26.

[0128] The above-described embodiments and their modifications are examples of realizing the technology of the present disclosure, and the technology of the present disclosure is not limited to these embodiments and modifications. For example, the technology of the present disclosure also includes the addition, deletion, or modification of some components or steps in the above-described embodiments and modifications. Furthermore, the above-described embodiments and modifications can be implemented in combination with each other.

[0129] The light source device of the present disclosure can be suitably used for camera flashes, lighting, vehicle headlights, etc. However, the light source device of the present disclosure is not limited to these applications.

[0130] The present disclosure includes the following aspects.

[0131] (Supplementary Note 1) A light source device comprising: one or more first light source units; one or more second light source units; and a light-shielding member arranged between the first light source units and the second light source units, wherein the first light source units have two or more first stacked bodies in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are stacked along a first direction, and the second light source unit has one or more second stacked bodies in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are stacked along the first direction, and in the first light source units, the two or more first stacked bodies are stacked continuously along the first direction, and the number of the first stacked bodies included in the first light source units is greater than the number of the second stacked bodies included in the second light source units.

[0132] (Supplementary Note 2) The light source device according to Supplementary Note 1, wherein the first light source section has two of the first laminated bodies, and the second light source section has one of the second laminated bodies.

[0133] (Appendix 3) The light source device described in Appendix 1, wherein the first light source unit has three of the first laminates, the second light source unit has two of the second laminates, and in the second light source unit, the two second laminates are stacked continuously along the first direction.

[0134] (Supplementary Note 4) The light source device according to any one of Supplementary Notes 1 to 3, wherein two or more second light source units are provided, and when viewed from above, the two or more second light source units are arranged on either side of the first light source unit.

[0135] (Supplementary Note 5) The light source device according to any one of Supplementary Notes 1 to 4, wherein, in a top view, the one or more first light source units and the one or more second light source units are arranged in a matrix and form a light-emitting region.

[0136] (Supplementary Note 6) The light source device according to Supplementary Note 5, wherein at least one of the first light source units is disposed in a central region of the light-emitting region in a top view.

[0137] (Supplementary Note 7) The light source device according to Supplementary Note 5 or 6, wherein at least one of the first light source units is disposed at each of four corners of the light-emitting region when viewed from above.

[0138] (Supplementary Note 8) The light source device according to any one of Supplementary Notes 1 to 7, wherein the size of the first light source unit is different from the size of the second light source unit when viewed from above.

[0139] (Supplementary Note 9) The light source device according to any one of Supplementary Notes 1 to 8, wherein the first light source unit further has a first wavelength conversion member arranged on the first laminate, the second light source unit further has a second wavelength conversion member arranged on the second laminate, and the content of the wavelength conversion material contained in the first wavelength conversion member is greater than the content of the wavelength conversion material contained in the second wavelength conversion member.

[0140] (Supplementary Note 10) A light source device according to any one of Supplementary Notes 1 to 9, comprising: a first power supply circuit that supplies a first voltage to the first light source unit; and a second power supply circuit that supplies a second voltage to the second light source unit, wherein a value of the ratio of the first voltage to the second voltage is equal to or greater than a value of a ratio of the number of stacks of the first stack in the first light source unit to the number of stacks of the second stack in the second light source unit.

[0141] (Supplementary Note 11) The light source device according to any one of Supplementary Notes 1 to 10, wherein the two or more first laminates in the first light source section are connected in series.

[0142] (Supplementary Note 12) The light source device according to any one of Supplementary Notes 1 to 10, wherein the two or more first stacks in the first light source section are connected in parallel.

[0143] (Supplementary Note 13) The light source device according to any one of Supplementary Notes 1 to 12, which is for use as a flash.

[0144] (Supplementary Note 14) The light source device according to any one of Supplementary Notes 1 to 13, further comprising a lens onto which the light emitted by the first light source unit and the light emitted by the second light source unit are incident.

[0145] (Supplementary Note 15) A light source device comprising: one or more first light source units; one or more second light source units; and a light-shielding member arranged between the first light source units and the second light source units, wherein the first light source units have two or more first stacked bodies in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are stacked, and the second light source unit has one or more second stacked bodies in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are stacked, and in the first light source unit, the two or more first stacked bodies are stacked continuously along a stacking direction of the first stacked bodies, and the number of the first stacked bodies included in the first light source unit is greater than the number of the second stacked bodies included in the second light source unit.

[0146] 1, 1a, 1b, 1c, 1d, 2, 3, 4, 4a, 5, 6, 6a, 6b, 6c, 6d, 7, 8, 8a, 8b, 9, 9a, 9b, 9c, 9e Light source device 10, 10a, 10b, 10c, 10d First light source section 10g Substrate 10n n-type semiconductor layer 10p p-type semiconductor layer 11 First stacked body 11a Active layer 11n n-type semiconductor layer 11p p-type semiconductor layer 12 First stacked body 12a Active layer 12n n-type semiconductor layer 12p p-type semiconductor layer 13 First stacked body 13a Active layer 13n n-type semiconductor layer 13p p-type semiconductor layer 14 Tunnel junction layer 15m Common electrode 15n, 15n1, 15n2 n-side electrode 15p, 15p1, 15p2 p-side electrode 16, 16a first wavelength conversion member 16b, 16c, 16d wavelength conversion layer 17 first translucent member 18, 18a first bonding member 19 first unit 20, 20d second light source section 20g substrate 21 second stacked body 21a active layer 21n n-type semiconductor layer 21p p-type semiconductor layer 22 second stacked body 22a active layer 22n n-type semiconductor layer 22p p-type semiconductor layer 25n n-side electrode 25p p-side electrode 26 second wavelength conversion member 27 second translucent member 28 second bonding member 29 second unit 30 third light source section 40 lens member 41 lens 41c central axis 42 support portion 44 lens member 45 support member 46a, 46b, 46c Lens 47 Adhesive member 50 Light-emitting area 61, 61a First power supply circuit 62 Second power supply circuit 70 Light-shielding member 71, 71c Light-emitting section 72 Air layer 80 Wiring board 81 ASIC board 90 Mobile terminal 91 Housing 92 Cover member 101, 102 Subject 201 Mounting board L1, L2, Lc, Le Light I1 First current I2 Second current V1 First voltage V2 Second voltage

Claims

1. One or more first light sources, One or more second light sources, A light-shielding member disposed between the first light source and the second light source, Equipped with, The first light source unit has two or more first laminates in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are stacked along a first direction. The second light source unit has one or more second laminates in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are stacked along the first direction. In the first light source unit, the two or more first stacked bodies are stacked continuously along the first direction. A light source device in which the number of first stacked bodies included in the first light source unit is greater than the number of second stacked bodies included in the second light source unit.

2. The first light source unit has two of the first stacked bodies, The light source device according to claim 1, wherein the second light source unit has one of the second laminates.

3. The first light source unit has three of the first stacked bodies, The second light source unit has two of the second stacked bodies, The light source device according to claim 1, wherein in the second light source section, the two second stacked bodies are stacked continuously along the first direction.

4. The second light source unit is provided in two or more units. The light source device according to any one of claims 1 to 3, wherein, in a top view, two or more second light sources are arranged with the first light source in between.

5. The light source device according to any one of claims 1 to 3, wherein, in a top view, the one or more first light source units and the one or more second light source units are arranged in a matrix and constitute a light-emitting region.

6. The light source device according to claim 5, wherein, in a top view, at least one of the first light sources is located in the central region of the light-emitting area.

7. The light source device according to claim 5, wherein, in a top view, at least one of the first light sources is arranged at each of the four corners of the light-emitting region.

8. The light source device according to any one of claims 1 to 3, wherein the size of the first light source unit is different from the size of the second light source unit when viewed from above.

9. The first light source unit further comprises a first wavelength conversion member disposed on the first laminate, The second light source unit further comprises a second wavelength conversion member disposed on the second laminate, The light source device according to any one of claims 1 to 3, wherein the content of the wavelength conversion material in the first wavelength conversion member is greater than the content of the wavelength conversion material in the second wavelength conversion member.

10. A first power supply circuit that supplies a first voltage to the first light source unit, A second power supply circuit that supplies a second voltage to the second light source unit, Equipped with, The light source device according to any one of claims 1 to 3, wherein the ratio of the first voltage to the second voltage is greater than or equal to the ratio of the number of layers of the first laminate in the first light source unit to the number of layers of the second laminate in the second light source unit.

11. The light source device according to any one of claims 1 to 3, wherein the two or more first laminates in the first light source unit are connected in series.

12. The light source device according to any one of claims 1 to 3, wherein the two or more first laminates in the first light source unit are connected in parallel.

13. A light source device according to any one of claims 1 to 12, which is for use as a flash.

14. The light source device according to any one of claims 1 to 3, further comprising a lens into which light emitted from the first light source and light emitted from the second light source are incident.

15. One or more first light sources, One or more second light sources, A light-shielding member disposed between the first light source and the second light source, Equipped with, The first light source unit has two or more first laminates, each having a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked on top of each other. The second light source unit has one or more second laminates in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are stacked. In the first light source unit, the two or more first laminates are stacked continuously along the stacking direction of the first laminates. A light source device in which the number of first stacked bodies included in the first light source unit is greater than the number of second stacked bodies included in the second light source unit.

16. The first light source unit has three of the first stacked bodies, The second light source unit has two of the second stacked bodies, The light source device according to claim 15, wherein in the second light source section, the two second laminates are continuously stacked along the stacking direction.

17. The light source device according to claim 15 or 16, wherein, in a top view, the one or more first light source units and the one or more second light source units are arranged in a matrix and constitute a light-emitting region.

18. The light source device according to claim 17, wherein, in a top view, at least one of the first light sources is located in the central region of the light-emitting area.

19. The light source device according to claim 17, wherein, in a top view, at least one of the first light sources is arranged at each of the four corners of the light-emitting region.

20. The first light source unit further comprises a first wavelength conversion member disposed on the first laminate, The second light source unit further comprises a second wavelength conversion member disposed on the second laminate, The light source device according to claim 15 or 16, wherein the content of the wavelength conversion material in the first wavelength conversion member is greater than the content of the wavelength conversion material in the second wavelength conversion member.

21. A first power supply circuit that supplies a first voltage to the first light source unit, A second power supply circuit that supplies a second voltage to the second light source unit, Equipped with, The light source device according to claim 15 or 16, wherein the ratio of the first voltage to the second voltage is greater than or equal to the ratio of the number of layers of the first laminate in the first light source unit to the number of layers of the second laminate in the second light source unit.

22. The light source device according to claim 15 or 16, wherein the two or more first laminates in the first light source unit are connected in parallel.