Solid-state imaging device and method for manufacturing solid-state imaging device

Abstract

This solid-state imaging device comprises: a support body on which a plurality of first terminals are provided; a light reception sensor that has a frame unit on which a plurality of second terminals are provided, and a light reception unit formed on the inside of the frame unit so as to be thinner than the frame unit, the light reception sensor being disposed on the support body such that the plurality of first terminals and the plurality of second terminals correspond to each other; a plurality of connection units that are disposed between the support body and the frame unit, and that electrically connect the plurality of first terminals to the plurality of second terminals; a support unit that is disposed between the support body and the light reception unit, and that supports the light reception unit; and a resin layer disposed between at least the support body and the light reception unit.

Description

Solid-state imaging device and method for manufacturing the same

[0001] The present disclosure relates to a solid-state imaging device and a method for manufacturing a solid-state imaging device.

[0002] A solid-state imaging device is known that includes a support, a light-receiving sensor arranged on the support, a resin layer arranged between the support and the light-receiving sensor, and a plurality of connection portions that electrically connect a plurality of terminals provided on the support and a plurality of terminals provided on the light-receiving sensor, wherein the light-receiving sensor has a frame portion in which the plurality of terminals are provided, and a light-receiving portion that is formed inside the frame portion and is thinner than the frame portion (see, for example, Patent Document 1).

[0003] Japanese Unexamined Patent Publication No. 6-196680

[0004] In the solid-state imaging device described above, it is sometimes desirable to reduce the thickness and / or increase the area of ​​the light receiving section. However, if an attempt is made to reduce the thickness and / or increase the area of ​​the light receiving section, for example, by increasing the area of ​​the light receiving section while maintaining the thickness of the light receiving section, there is a risk that the light receiving section will bend.

[0005] The present disclosure aims to provide a solid-state imaging device that can suppress bending of a light receiving portion that is formed thinner than a frame portion of a light receiving sensor, and a method for manufacturing the solid-state imaging device.

[0006] A solid-state imaging device according to one aspect of the present disclosure is [1] "a solid-state imaging device comprising: a support body having a plurality of first terminals, a frame body having a plurality of second terminals, and a light-receiving portion formed inside the frame body and thinner than the frame body, the light-receiving sensor being arranged on the support body so that the plurality of first terminals correspond to the plurality of second terminals; a plurality of connection portions being arranged between the support body and the frame body and electrically connecting the plurality of first terminals to the plurality of second terminals; a support portion being arranged between the support body and the light-receiving portion and supporting the light-receiving portion; and a resin layer being arranged at least between the support body and the light-receiving portion."

[0007] In the solid-state imaging device described in [1] above, multiple second terminals provided on the frame portion of the light-receiving sensor are electrically connected to multiple first terminals provided on the support by multiple connection portions. This ensures reliable electrical connection between the support and the light-receiving sensor. Furthermore, a support portion supports the light-receiving portion of the light-receiving sensor between the support and the light-receiving portion, and a resin layer is disposed between the support and the light-receiving portion. This makes it possible to suppress bending of the light-receiving portion even when the light-receiving portion is made thinner and / or larger in area. Therefore, the solid-state imaging device described in [1] above makes it possible to suppress bending of the light-receiving portion of the light-receiving sensor, which is formed thinner than the frame portion.

[0008] A solid-state imaging device according to one aspect of the present disclosure may be [2] "the solid-state imaging device according to the above [1], in which the thermal conductivity of the support portion is higher than the thermal conductivity of the resin layer." According to the solid-state imaging device according to [2], even when the light-receiving portion generates heat, the heat generated in the light-receiving portion can be efficiently discharged to the support portion side.

[0009] A solid-state imaging device according to one aspect of the present disclosure may be [3] "the solid-state imaging device according to the above [2], in which the support portion is formed of metal." According to the solid-state imaging device according to [3], a support portion with high thermal conductivity can be easily and reliably realized.

[0010] A solid-state imaging device according to one aspect of the present disclosure may be [4] "the solid-state imaging device according to any one of [1] to [3] above, wherein each of the plurality of connecting portions is formed of a metal having a lower melting point than a material forming the support portion." According to the solid-state imaging device described in [4], for example, when the plurality of first terminals and the plurality of second terminals are electrically connected by melting the plurality of connecting portions, it is possible to prevent the support portion from melting, thereby ensuring support of the light receiving portion by the support portion.

[0011] A solid-state imaging device according to one aspect of the present disclosure may be [5] "the solid-state imaging device according to any one of [1] to [4] above, wherein the support portion is in surface contact with the light receiving portion." The solid-state imaging device according to [5] can stabilize support of the light receiving portion by the support portion. Furthermore, if the thermal conductivity of the support portion is higher than the thermal conductivity of the resin layer, heat generated in the light receiving portion can be more efficiently discharged to the support portion.

[0012] A solid-state imaging device according to one aspect of the present disclosure may be [6] "the solid-state imaging device according to any one of [1] to [5] above, in which the height of the support portion from the surface of the support body on the light-receiving sensor side is approximately the same as the distance between the surface of the support body and the surface of the frame portion on the support body side." The solid-state imaging device according to [6] can more reliably prevent the light-receiving portion from bending.

[0013] A solid-state imaging device according to one aspect of the present disclosure may be [7] "the solid-state imaging device according to any one of [1] to [6] above, in which a plurality of support portions are arranged as the support portion between the support body and the light receiving portion, and the plurality of support portions are spaced apart from each other." The solid-state imaging device according to [6] can more reliably prevent the light receiving portion from bending.

[0014] A solid-state imaging device according to one aspect of the present disclosure may be [8] "the solid-state imaging device according to the above [7], in which the resin layer is disposed over the entire region between the support body and the light receiving section, excluding the region in which the plurality of support sections are disposed." The solid-state imaging device according to [8] can reliably maintain a state in which bending of the light receiving section is suppressed.

[0015] A solid-state imaging device according to one aspect of the present disclosure may be [9] "the solid-state imaging device according to the above [7] or [8], wherein the plurality of support portions are two-dimensionally arranged at a uniform pitch." The solid-state imaging device according to [9] can more reliably suppress bending of the light receiving portion.

[0016] A solid-state imaging device according to one aspect of the present disclosure may be

[10] "the solid-state imaging device according to any one of [7] to [9] above, wherein the side surfaces of the plurality of support parts are curved so as to be convex outward." The solid-state imaging device according to

[10] can prevent damage to the light receiving part due to contact with each of the plurality of support parts.

[0017] A solid-state imaging device according to one aspect of the present disclosure may be

[11] "the solid-state imaging device according to any one of [1] to

[10] above, wherein the resin layer is integrally disposed between the support body and the light receiving section and between the support body and the frame section." The solid-state imaging device according to

[11] can reliably fix the light receiving sensor to the support body.

[0018] A manufacturing method for a solid-state imaging device according to one aspect of the present disclosure is

[12] "a method for manufacturing a solid-state imaging device according to any one of [1] to

[11] above, comprising: a first step of arranging the support portion on a surface of the support body facing the light-receiving sensor; a second step of arranging the plurality of connection portions on the plurality of first terminals or the plurality of second terminals; a third step of electrically connecting the plurality of first terminals and the plurality of second terminals via the plurality of connection portions after the first step and the second step; and a fourth step of arranging the resin layer between the support body and the light-receiving sensor while applying pressure to the light-receiving portion from the side opposite to the support body after the third step."

[0019] In the method for manufacturing a solid-state imaging device described in

[12] above, after electrically connecting the plurality of first terminals and the plurality of second terminals via the plurality of connecting portions, a resin layer is disposed between the support body and the light-receiving sensor while applying pressure to the light-receiving portion from the side opposite the support body. This maintains a state in which bending of the light-receiving portion is suppressed. Therefore, according to the method for manufacturing a solid-state imaging device described in

[12] above, bending of the light-receiving portion formed thinner than the frame portion of the light-receiving sensor can be suppressed.

[0020] A manufacturing method of a solid-state imaging device according to one aspect of the present disclosure may be

[13] "the manufacturing method of a solid-state imaging device according to the above

[12] , wherein in the fourth step, pressure is applied to the light receiving section from the opposite side of the support by increasing the pressure in a space located on the opposite side of the support with respect to the light receiving section." According to the manufacturing method of a solid-state imaging device according to

[13] , pressure can be applied to the light receiving section from the opposite side of the support while suppressing damage to the light receiving section.

[0021] A manufacturing method for a solid-state imaging device according to one aspect of the present disclosure may be

[14] "the manufacturing method for a solid-state imaging device according to the above

[13] , wherein in the fourth step, gas is sprayed onto the light-receiving portion from the side opposite the support, thereby increasing the pressure in the space located on the side opposite the support with respect to the light-receiving portion." According to the manufacturing method for a solid-state imaging device according to

[14] , the pressure in the space located on the side opposite the support can be easily and reliably increased.

[0022] According to the present disclosure, it is possible to provide a solid-state imaging device that can suppress bending of a light receiving portion that is formed thinner than a frame portion of a light receiving sensor, and a method for manufacturing a solid-state imaging device.

[0023] FIG. 1 is a plan view of a solid-state imaging device according to an embodiment. FIG. 2 is a cross-sectional view of the solid-state imaging device taken along line II-II shown in FIG. 1. FIG. 3 is a cross-sectional view showing a method for manufacturing the solid-state imaging device shown in FIG. 1. FIG. 4 is a cross-sectional view showing a method for manufacturing the solid-state imaging device shown in FIG. 1. FIG. 5 is a cross-sectional view showing a method for manufacturing the solid-state imaging device shown in FIG. 1. FIG. 6 is a plan view of a modified solid-state imaging device. FIG. 7 is a plan view of a modified solid-state imaging device.

[0024] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or corresponding parts are denoted by the same reference numerals, and duplicated explanations will be omitted. [Configuration of Solid-State Imaging Device]

[0025] 1 and 2 , the solid-state imaging device 1 includes a support 2, a light receiving sensor 3, a plurality of connection portions 4, a plurality of support portions 5, and a resin layer 6. Hereinafter, the direction in which the support 2 and the light receiving sensor 3 are arranged will be referred to as the Z-axis direction, a direction perpendicular to the Z-axis direction will be referred to as the X-axis direction, and a direction perpendicular to both the Z-axis direction and the X-axis direction will be referred to as the Y-axis direction.

[0026] The support body 2 is provided with a plurality of terminals (first terminals) 21. The plurality of terminals 21 are arranged on a surface 2a of the support body 2 facing the light receiving sensor 3. In this embodiment, the plurality of terminals 21 are lined up along the outer edge of the surface 2a. The shape of the support body 2 is, for example, a rectangular plate with the thickness direction in the Z-axis direction. The main material of the support body 2 is, for example, ceramic. The support body 2 is further provided with a plurality of terminals (not shown) to which external wiring is electrically connected, and a plurality of wirings (not shown) that connect the plurality of terminals to the plurality of terminals 21.

[0027] The light-receiving sensor 3 has a frame 31 and a light-receiving unit 32 that are integrally formed. The frame 31 and the light-receiving unit 32 are mainly made of, for example, silicon. The frame 31 has a surface 31a opposite to the support 2 and a surface 31b facing the support 2. The light-receiving unit 32 has a surface 32a opposite to the support 2 and a surface 32b facing the support 2. The light-receiving unit 32 is formed thinner inside the frame 31 than the frame 31. In this embodiment, the surface 32a of the light-receiving unit 32 is the bottom surface of a recess that opens to the surface 31a of the frame 31, and the surface 32b of the light-receiving unit 32 is located on the same plane as the surface 31b of the frame 31. The light-receiving sensor 3 is a back-illuminated light-receiving sensor (e.g., a CCD image sensor) in which the surface 32a of the light-receiving unit 32, which is thinner than the frame 31, serves as a light incident surface.

[0028] The frame portion 31 is provided with a plurality of terminals (second terminals) 33. The plurality of terminals 33 are arranged on a surface 31b of the frame portion 31. In this embodiment, the plurality of terminals 33 are lined up along the outer edge of the surface 31b. The shape of the frame portion 31 is, for example, a rectangular frame with the thickness direction in the Z-axis direction. The thickness of the frame portion 31 is, for example, about 300 μm. The length of one side of the frame portion 31 is, for example, about several centimeters.

[0029] The light receiving unit 32 includes a plurality of pixels (not shown) that convert incident light into electric charges, and a transfer unit (not shown) that transfers the electric charges accumulated in each of the plurality of pixels. The plurality of pixels are arranged, for example, in a matrix along the surface 32b of the light receiving unit 32. The shape of the light receiving unit 32 is, for example, a rectangular film with the thickness direction in the Z-axis direction. The thickness of the light receiving unit 32 is, for example, about 20 μm. The length of one side of the light receiving unit 32 is, for example, about several centimeters.

[0030] The light receiving sensor 3 is disposed on the surface 2a of the support body 2 at a distance from the surface 2a of the support body 2. When viewed from the Z-axis direction, each terminal 33 of the light receiving sensor 3 overlaps with each terminal 21 of the support body 2. In other words, the light receiving sensor 3 is disposed on the support body 2 so that the multiple terminals 21 correspond to the multiple terminals 33. The distance between the support body 2 and the light receiving sensor 3 is, for example, approximately 50 μm.

[0031] The multiple connection portions 4 are arranged between the support body 2 and the frame portion 31 of the light receiving sensor 3. The multiple connection portions 4 electrically connect the multiple terminals 21 and the multiple terminals 33. More specifically, each connection portion 4 electrically connects a corresponding pair of terminals 21, 33. In this embodiment, each connection portion 4 is formed of a metal (e.g., SnBi, etc.). When viewed from the Z-axis direction, each connection portion 4 has a circular shape, for example. When viewed from the Z-axis direction, each connection portion 4 has a diameter of, for example, approximately 80 μm. Each connection portion 4 is, for example, a metal bump.

[0032] In the solid-state imaging device 1, input and output of electrical signals to and from the light receiving section 32 is carried out via the plurality of terminals 21, the plurality of connecting sections 4 provided on the support body 2, and the plurality of terminals 33 provided on the frame section 31. Specifically, electrical signals for driving the transfer sections of the light receiving section 32 are input to the transfer sections via the plurality of terminals 21, the plurality of connecting sections 4 provided on the support body 2, and the plurality of terminals 33 provided on the frame section 31. Furthermore, electrical signals corresponding to the charges accumulated in each pixel of the light receiving section 32 are output from the pixel via the plurality of terminals 21, the plurality of connecting sections 4 provided on the support body 2, and the plurality of terminals 33 provided on the frame section 31.

[0033] The multiple support portions 5 are arranged between the support body 2 and the light receiving portion 32 of the light receiving sensor 3. The multiple support portions 5 support the light receiving portion 32 while being spaced apart from each other. The multiple support portions 5 are arranged two-dimensionally at a uniform pitch. In this embodiment, each support portion 5 is formed of a metal (e.g., SnAgCu, etc.). The shape of each support portion 5 when viewed from the Z-axis direction is, for example, circular. The diameter of each support portion 5 when viewed from the Z-axis direction is, for example, approximately 55 μm. Each support portion 5 is, for example, a metal bump. However, each support portion 5 is not electrically connected to either the support body 2 or the light receiving portion 32. Note that each connection portion 4 is formed of a metal having a lower melting point than the metal forming the support portion 5.

[0034] Each support portion 5 has a top surface 5a and a side surface 5b. The top surface 5a is the end surface of each support portion 5 facing the light receiving portion 32 and is a flat surface perpendicular to the Z-axis direction. Each support portion 5 is in surface contact with the light receiving portion 32 at the top surface 5a. The side surface 5b is the surface of each support portion 5 that extends from the surface 2a of the support body 2 to the surface 32b of the light receiving portion 32. When viewed from a direction perpendicular to the Z-axis direction, the side surface 5b is smoothly curved so as to be convex outward. The angle formed between the region of the side surface 5b of each support portion 5 facing the light receiving portion 32 and the surface 32b of the light receiving portion 32 becomes smaller as the support portion 5 approaches the light receiving portion 32. In this embodiment, the height of each support portion 5 from the surface 2a of the support body 2 is approximately the same as the distance between the surface 2a of the support body 2 and the surface 31b of the frame portion 31. That is, the height of each support portion 5 from the surface 2 a of the support 2 is 95% to 105% of the distance between the surface 2 a of the support 2 and the surface 31 b of the frame portion 31 .

[0035] The resin layer 6 is integrally disposed between the support 2 and the light receiving section 32 and between the support 2 and the frame section 31. The resin layer 6 is disposed over the entire region between the support 2 and the light receiving sensor 3, except for the region where the multiple connection sections 4 and multiple support sections 5 are disposed. In other words, the resin layer 6 is disposed over the entire region between the support 2 and the light receiving section 32, except for the region where the multiple support sections 5 are disposed. The resin layer 6 is disposed so as not to generate voids in the regions between the multiple support sections 5. The material of the resin layer 6 is, for example, epoxy resin. The resin layer 6 is, for example, an underfill resin layer. The thermal conductivity of each support section 5 is higher than the thermal conductivity of the resin layer 6. [Method for Manufacturing a Solid-State Imaging Device]

[0036] A method for manufacturing the above-described solid-state imaging device 1 (a method for manufacturing a solid-state imaging device) will now be described. First, as shown in FIG. 3A, a support 2 is prepared. Next, as shown in FIG. 3B, a plurality of support portions 5 are arranged on the surface 2a of the support 2 (first step). More specifically, the plurality of support portions 5 are melted and re-solidified by heating, thereby fixing the plurality of support portions 5 to the surface 2a of the support 2. Next, as shown in FIG. 4A, the plurality of support portions 5 are simultaneously heated and pressed, thereby forming a top surface 5a on each support portion 5. Here, the top surfaces 5a of the support portions 5 are located on the same plane. Note that when the plurality of support portions 5 are pressed to form the top surfaces 5a on each support portion 5, the plurality of support portions 5 do not need to be heated.

[0037] 4B, the light receiving sensor 3 is prepared, and the plurality of connection portions 4 are arranged on the plurality of terminals 33 (second step). More specifically, the plurality of connection portions 4 are melted by heating and then re-solidified, thereby fixing the plurality of connection portions 4 to the plurality of terminals 33. Note that the first step and the second step may be performed in parallel, or the second step may be performed after the first step, or the first step may be performed after the second step.

[0038] After the first and second steps, as shown in Fig. 5(a), the plurality of terminals 21 and the plurality of terminals 33 are electrically connected via the plurality of connection parts 4 (third step). More specifically, the plurality of connection parts 4 are melted and re-solidified by heating, thereby electrically connecting the plurality of terminals 21 and the plurality of terminals 33 via the plurality of connection parts 4. At this time, because each connection part 4 is formed from a metal having a lower melting point than the metal forming each support part 5, each connection part 4 can be melted while preventing each support part 5 from melting.

[0039] After the third step, as shown in FIG. 5B , a resin layer 6 is placed between the support 2 and the light-receiving sensor 3 while pressure is applied to the light-receiving unit 32 from the side opposite the support 2 (fourth step). More specifically, the air blower 100 blows air (gas) onto the light-receiving unit 32 from the side opposite the support 2, thereby increasing the pressure in the space S located on the side opposite the support 2 relative to the light-receiving unit 32, thereby applying pressure to the light-receiving unit 32 from the side opposite the support 2. In this state, the resin layer 6 is hardened, and the solid-state imaging device 1 is obtained. Note that the multiple supports 5 may be brought into contact with the light-receiving unit 32 in the third step, or may be brought into contact with the light-receiving unit 32 in the fourth step (i.e., at least some of the multiple supports 5 are separated from the light-receiving unit 32 in the third step). In either case, applying pressure to the light-receiving unit 32 from the side opposite the support 2 ensures that the multiple supports 5 are in contact with the light-receiving unit 32. [Action and effect]

[0040] In the solid-state imaging device 1, a plurality of terminals 33 provided on the frame portion 31 of the light-receiving sensor 3 are electrically connected to a plurality of terminals 21 provided on the support body 2 via a plurality of connection portions 4. This ensures a reliable electrical connection between the support body 2 and the light-receiving sensor 3. Furthermore, a plurality of support portions 5 support the light-receiving portion 32 of the light-receiving sensor 3 between the support body 2 and the light-receiving portion 32, and a resin layer 6 is disposed between the support body 2 and the light-receiving portion 32. This makes it possible to prevent the light-receiving portion 32 from bending even when the light-receiving portion 32 is made thinner and / or has a larger area. Therefore, the solid-state imaging device 1 makes it possible to prevent the light-receiving portion 32, which is formed thinner than the frame portion 31 of the light-receiving sensor 3, from bending.

[0041] In the solid-state imaging device 1, the thermal conductivity of each support portion 5 is higher than the thermal conductivity of the resin layer 6. As a result, even when the light-receiving portion 32 generates heat, the heat generated in the light-receiving portion 32 can be efficiently discharged to the support portion 2 side.

[0042] In the solid-state imaging device 1, each support portion 5 is made of metal, which makes it possible to easily and reliably realize each support portion 5 with high thermal conductivity.

[0043] In the solid-state imaging device 1, each connection portion 4 is formed from a metal having a lower melting point than the metal forming each support portion 5. This prevents the support portions 5 from melting when, for example, the terminals 21 and the terminals 33 are electrically connected by melting the connection portions 4, thereby ensuring that the light receiving portion 32 is supported by the support portions 5.

[0044] In the solid-state imaging device 1, each support portion 5 is in surface contact with the light receiving portion 32. This allows the light receiving portion 32 to be stably supported by the multiple support portions 5. In addition, heat generated in the light receiving portion 32 can be more efficiently discharged to the support portion 2 side.

[0045] In the solid-state imaging device 1, the height of each support portion 5 from the surface 2 a of the support 2 is approximately the same as the distance between the surface 2 a of the support 2 and the surface 31 b of the frame portion 31. This makes it possible to more reliably prevent the light receiving portion 32 from bending.

[0046] In the solid-state imaging device 1, the support portions 5 are spaced apart from each other, which makes it possible to more reliably prevent the light receiving portion 32 from bending.

[0047] In the solid-state imaging device 1, the resin layer 6 is disposed over the entire region between the support 2 and the light receiving section 32, excluding the region where the plurality of support sections 5 are disposed. This makes it possible to reliably maintain a state in which the bending of the light receiving section 32 is suppressed.

[0048] In the solid-state imaging device 1, the plurality of support portions 5 are arranged two-dimensionally at a uniform pitch, which makes it possible to more reliably prevent the light receiving portion 32 from bending.

[0049] In the solid-state imaging device 1, the side surface 5b of each support portion 5 is curved so as to be convex outward, thereby making it possible to prevent damage to the light receiving portion 32 due to contact with each support portion 5.

[0050] In the solid-state imaging device 1, the resin layer 6 is integrally disposed between the support 2 and the light receiving section 32 and between the support 2 and the frame section 31. This ensures that the light receiving sensor 3 is fixed to the support 2.

[0051] In the manufacturing method of the solid-state imaging device 1, after electrically connecting the plurality of terminals 21 and the plurality of terminals 33 via the plurality of connecting portions 4, a resin layer 6 is disposed between the support body 2 and the light-receiving sensor 3 while applying pressure to the light-receiving portion 32 from the side opposite to the support body 2. This keeps the light-receiving portion 32 in a state where bending is suppressed. Therefore, according to the manufacturing method of the solid-state imaging device 1, it is possible to suppress bending of the light-receiving portion 32, which is formed thinner than the frame portion 31 of the light-receiving sensor 3.

[0052] In the method for manufacturing the solid-state imaging device 1, pressure is applied to the light receiving section 32 from the opposite side of the support body 2 by increasing the pressure in the space S located on the opposite side of the light receiving section 32 from the support body 2. This makes it possible to apply pressure to the light receiving section 32 from the opposite side of the support body 2 while suppressing damage to the light receiving section 32.

[0053] In the method for manufacturing the solid-state imaging device 1, air is blown onto the light receiving section 32 from the side opposite the support member 2, thereby increasing the pressure in the space S located on the side opposite the support member 2 with respect to the light receiving section 32. This makes it possible to easily and reliably increase the pressure in the space S located on the side opposite the support member 2. [Modification]

[0054] The present disclosure is not limited to the above-described embodiments. For example, the shape of each support portion 5 when viewed from the Z-axis direction is not limited to a circular shape. The shape of each support portion 5 when viewed from the Z-axis direction may be rectangular, as shown in FIG. 6 . Furthermore, the shape of each support portion 5 when viewed from the Z-axis direction may be elongated, as shown in FIG. 7 . In the example shown in FIG. 7 , each support portion 5 extends in the X-axis direction, and multiple support portions 5 are aligned in the Y-axis direction. Furthermore, multiple support portions 5 may be arranged two-dimensionally at non-uniform pitches.

[0055] The solid-state imaging device 1 may include one support portion 5. As an example, if the support portion 5 extends in an X-shape, an S-shape, or a zigzag shape when viewed from the Z-axis direction, the resin layer 6 can be disposed in the entire region between the support body 2 and the light receiving portion 32 except for the region where the support portion 5 is disposed.

[0056] In the solid-state imaging device 1, at least one support portion 5 may be formed of a material other than metal. In this case, the at least one support portion 5 may be, for example, a resin bump. Even if the at least one support portion 5 is formed of a material other than metal, if each connection portion 4 is formed of a metal having a lower melting point than the material forming the at least one support portion 5, for example, when the multiple terminals 21 and the multiple terminals 33 are electrically connected by melting the multiple connection portions 4, the at least one support portion 5 can be prevented from melting, thereby ensuring support of the light-receiving portion 32 by the at least one support portion 5. Furthermore, as long as the at least one support portion 5 is in contact with the light-receiving portion 32, it does not have to be in surface contact with the light-receiving portion 32. In this case, the manufacturing method of the solid-state imaging device 1 described above may not include a step of pressing the multiple support portions 5 to form the top surface 5a on each support portion 5, and the hemispherical support portion 5 may be brought into contact with the light-receiving portion 32. Furthermore, the side surface 5b of at least one support portion 5 does not have to be curved so as to be convex outward when viewed from a direction perpendicular to the Z-axis direction, for example, it may be a cylindrical surface. Furthermore, the thermal conductivity of at least one support portion 5 may be equal to or lower than the thermal conductivity of the resin layer 6. Furthermore, regardless of whether at least one support portion 5 is formed of metal or a material other than metal, the melting point of the metal forming each connection portion 4 may be equal to or higher than the melting point of the material forming at least one support portion 5.

[0057] In the solid-state imaging device 1, the resin layer 6 may be disposed separately between the support 2 and the light-receiving section 32 and between the support 2 and the frame 31. Alternatively, the resin layer 6 does not have to be disposed between the support 2 and the frame 31 as long as it is disposed between the support 2 and the light-receiving section 32. That is, the resin layer 6 only needs to be disposed between the support 2 and the light-receiving section 32. Furthermore, in the region between the support 2 and the light-receiving section 32, the resin layer 6 does not have to be disposed in the entire region other than the region where the multiple support sections 5 are disposed. That is, in the region between the support 2 and the light-receiving section 32, the resin layer 6 may be disposed in a part of the region other than the region where the multiple support sections 5 are disposed. Furthermore, when the resin layer 6 is disposed between the support 2 and the frame 31, the resin layer 6 does not have to be disposed in the entire region between the support 2 and the frame 31 other than the region where the multiple connection sections 4 are disposed. In other words, when a resin layer 6 is arranged between the support 2 and the frame portion 31, the resin layer 6 may be arranged in a part of the area between the support 2 and the frame portion 31 other than the area in which the multiple connection portions 4 are arranged.

[0058] In the manufacturing method of the solid-state imaging device 1, in the second step, instead of arranging the plurality of connecting portions 4 on the plurality of terminals 33 of the light-receiving sensor 3, the plurality of connecting portions 4 may be arranged on the plurality of terminals 21 of the support body 2. Also, in the fourth step, the pressure in the space S may be increased by blowing a gas other than air onto the light-receiving portion 32 from the side opposite the support body 2. Also, in the fourth step, pressure may be applied to the light-receiving portion 32 from the side opposite the support body 2 by increasing the pressure in the space S by a method other than blowing gas. Also, pressure may be applied to the light-receiving portion 32 from the side opposite the support body 2 by pressing some kind of member against the light-receiving portion 32 from the side opposite the support body 2.

[0059] 1...solid-state imaging device, 2...support, 2a...surface, 3...light-receiving sensor, 4...connection portion, 5...support portion, 5b...side surface, 6...resin layer, 21...terminal (first terminal), 31...frame portion, 31b...surface, 32...light-receiving portion, 32b...surface, 33...terminal (second terminal).

Claims

1. A support provided with a plurality of first terminals; A light-receiving sensor having a frame portion provided with a plurality of second terminals, and a light-receiving portion formed thinner than the frame portion inside the frame portion, and disposed on the support such that the plurality of first terminals and the plurality of second terminals correspond to each other; A plurality of connection portions disposed between the support and the frame portion and electrically connecting the plurality of first terminals and the plurality of second terminals; A support portion disposed between the support and the light-receiving portion and supporting the light-receiving portion; A solid-state imaging device including at least a resin layer disposed between the support and the light-receiving portion.

2. The solid-state imaging device according to claim 1, wherein a thermal conductivity of the support portion is higher than a thermal conductivity of the resin layer.

3. The solid-state imaging device according to claim 2, wherein the support portion is formed of a metal.

4. The solid-state imaging device according to claim 1, wherein each of the plurality of connection portions is formed of a metal having a melting point lower than a material forming the support portion.

5. The solid-state imaging device according to claim 1, wherein the support portion is in surface contact with the light-receiving portion.

6. The solid-state imaging device according to claim 1, wherein a height of the support portion from a surface of the support on the light-receiving sensor side is substantially the same as a distance between the surface of the support and a surface of the frame on the support side.

7. A plurality of support portions are disposed as the support portion between the support and the light-receiving portion, The solid-state imaging device according to claim 1, wherein each of the plurality of support portions is separated from each other.

8. The solid-state imaging device according to claim 7, wherein the resin layer is disposed over an entire region other than a region where the plurality of support portions are disposed in a region between the support and the light-receiving portion.

9. The solid-state imaging device according to claim 7, wherein the plurality of support portions are two-dimensionally arranged at a uniform pitch.

10. The solid-state imaging device according to claim 7, wherein side surfaces of each of the plurality of support portions are curved so as to be convex outward.

11. The solid-state imaging device according to claim 1, wherein the resin layer is integrally disposed between the support and the light-receiving portion and between the support and the frame portion.

12. A method of manufacturing the solid-state imaging device according to any one of claims 1 to 11, A first step of disposing the support portion on a surface of the support on the light-receiving sensor side; A second step of disposing the plurality of connection portions on the plurality of first terminals or on the plurality of second terminals; After the first step and the second step, a third step of electrically connecting the plurality of first terminals and the plurality of second terminals through the plurality of connection portions; After the third step, a fourth step of disposing the resin layer between the support and the light receiving sensor while applying pressure to the light receiving portion from the side opposite to the support, a method of manufacturing a solid-state imaging device.

13. The method of manufacturing a solid-state imaging device according to claim 12, wherein, in the fourth step, pressure is applied to the light receiving portion from the side opposite to the support by increasing the pressure in the space located on the side opposite to the support with respect to the light receiving portion.

14. The method of manufacturing a solid-state imaging device according to claim 13, wherein, in the fourth step, the pressure in the space located on the side opposite to the support with respect to the light receiving portion is increased by blowing gas onto the light receiving portion from the side opposite to the support.