Magnetoresistive device and magnetic memory

Abstract

This magnetoresistive device comprises a substrate, a first magnetoresistive effect element, a first layer sandwiched between the substrate and the first magnetoresistive effect element, and a second layer positioned apart from the substrate more than the first magnetoresistive effect element in the lamination direction. The first magnetoresistive effect element comprises a laminate, a spin orbit torque wire in contact with the laminate, a first via wire connected to the spin orbit torque wire, and a second via wire connected to the spin orbit torque wire at a position different from that of the first via wire. The laminate comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The first layer or the second layer has an insulating first magnetic layer.

Description

Magnetoresistive devices and magnetic memories

[0001] The present invention relates to magnetoresistive devices and magnetic memories.

[0002] Giant magnetoresistance (GMR) elements, which are made up of multilayer films of ferromagnetic layers and non-magnetic layers, and tunnel magnetoresistance (TMR) elements, which use an insulating layer (tunnel barrier layer or barrier layer) as the non-magnetic layer, are known as magnetoresistance effect elements. Magnetoresistance effect elements can be applied to magnetic sensors, high-frequency components, magnetic heads, in-memory computing elements, and non-volatile random access memories (MRAMs).

[0003] MRAM is a magnetic memory integrated with magnetoresistive elements. MRAM reads and writes data by utilizing the property that the resistance of a magnetoresistive element changes when the magnetization directions of two ferromagnetic layers sandwiching a nonmagnetic layer in the magnetoresistive element change. Stored data can be rewritten by controlling the magnetization direction of the ferromagnetic layer of the magnetoresistive element. Spin transfer torque and spin orbit torque are examples of torques that act on the magnetization of a ferromagnetic layer. These torques act on the magnetization to control the magnetization direction of the ferromagnetic layer. Magnetic memories include MRAM, which stores digital data, as well as neuromorphic devices and spin memristors, which store analog data by mimicking the human brain.

[0004] Spin transfer torque (STT) is generated by passing a current in a direction intersecting the plane in which the ferromagnetic layer extends (e.g., the stacking direction of a magnetoresistive element). Spin-orbit torque is induced by a spin current generated by spin-orbit interaction or the Rashba effect at the interface of different materials. For example, Patent Document 1 discloses a magnetoresistive element that utilizes spin-orbit torque. Patent Document 1 also describes that the influence of an external magnetic field on a magnetoresistive element can be reduced by arranging a soft magnetic material so as to surround the periphery of the magnetoresistive element.

[0005] Japanese Patent Application Laid-Open No. 2020-35792

[0006] External magnetic fields affect the magnetization of ferromagnetic materials. When an external magnetic field acts on a magnetoresistive element, the magnetization direction of the element changes, which can result in data being overwritten. A new structure that can reduce the effect of external magnetic fields on magnetoresistive elements is needed.

[0007] The present invention has been made in view of the above circumstances, and has as its object to provide a magnetoresistive device capable of reducing the influence of an external magnetic field on a magnetoresistive effect element.

[0008] In order to solve the above problems, the present invention provides the following means.

[0009] The magnetoresistive device includes a substrate, a first magnetoresistive element, a first layer sandwiched between the substrate and the first magnetoresistive element, and a second layer positioned farther from the substrate in the stacking direction than the first magnetoresistive element. The first magnetoresistive element includes a stacked body, a spin orbit torque wiring in contact with the stacked body, a first via wiring connected to the spin orbit torque wiring, and a second via wiring connected to the spin orbit torque wiring at a position different from the first via wiring. The stacked body includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The first layer or the second layer includes an insulating first magnetic layer.

[0010] The magnetoresistive device according to the present disclosure can reduce the influence of external magnetic fields.

[0011] 1 is a circuit diagram of a magnetoresistive device according to a first embodiment. 2 is a cross-sectional view of a characteristic portion of the magnetoresistive device according to the first embodiment. 3 is a cross-sectional view of a magnetoresistive effect element according to the first embodiment. 4 is a plan view of a magnetoresistive effect element according to the first embodiment. 5 is an enlarged view of a characteristic portion of the magnetoresistive device according to the first embodiment. 6 is a cross-sectional view of a characteristic portion of a magnetoresistive device according to the second embodiment. 7 is a cross-sectional view of a characteristic portion of a magnetoresistive device according to the third embodiment. 8 is a cross-sectional view of a characteristic portion of a magnetoresistive device according to the fourth embodiment. 9 is a cross-sectional view of a characteristic portion of a magnetoresistive device according to the fifth embodiment. 10 is a cross-sectional view of a characteristic portion of a magnetoresistive device according to the sixth embodiment. 11 is a plan view of a characteristic portion of a magnetoresistive device according to the seventh embodiment. 12 is a plan view of a characteristic portion of a first modified example of the magnetoresistive device according to the seventh embodiment. 13 is a plan view of a characteristic portion of a second modified example of the magnetoresistive device according to the seventh embodiment. 14 is a cross-sectional view of a characteristic portion of a magnetoresistive device according to the eighth embodiment. 15 is a cross-sectional view of a characteristic portion of a magnetoresistive device according to the ninth embodiment.

[0012] The present embodiment will be described in detail below with reference to the drawings as appropriate. The drawings used in the following description may show characteristic portions enlarged for the sake of clarity, and the dimensional ratios of each component may differ from the actual ones. The materials, dimensions, etc. exemplified in the following description are merely examples, and the present invention is not limited thereto. Appropriate changes can be made within the scope of the effects of the present invention.

[0013] First, directions will be defined. One direction on one surface of the substrate 20 (see FIG. 2), which will be described later, is defined as the x-direction, and the direction perpendicular to the x-direction is defined as the y-direction. The x-direction is, for example, the longitudinal direction of the spin orbit torque wiring 12. The z-direction is a direction perpendicular to the x-direction and y-direction, and is the direction from the substrate 20 toward the magnetoresistive effect element 10. The z-direction is an example of the stacking direction in which each layer is stacked. Hereinafter, the +z direction may be expressed as "up" and the -z direction as "down". Up and down do not necessarily coincide with the direction in which gravity is applied.

[0014] In this specification, "extending in the x-direction" means, for example, that the dimension in the x-direction is greater than the smallest dimension among the dimensions in the x-direction, y-direction, and z-direction. The same applies to extending in other directions.

[0015] "First Embodiment" Fig. 1 is a circuit diagram of a magnetoresistive device 100 according to a first embodiment. The magnetoresistive device 100 includes a plurality of magnetoresistive effect elements 10, a plurality of write wirings WL, a plurality of common wirings CL, a plurality of read wirings RL, a plurality of first switching elements Sw1, a plurality of second switching elements Sw2, and a plurality of third switching elements Sw3. The magnetoresistive device 100 has, for example, the magnetoresistive effect elements 10 arranged in a matrix. The magnetoresistive device 100 is, for example, a magnetic memory or the like.

[0016] Each of the write wirings WL electrically connects a power supply to one or more magnetoresistive effect elements 10. Each of the common wirings CL is a wiring used both when writing and reading data. Each of the common wirings CL electrically connects a reference potential to one or more magnetoresistive effect elements 10. The reference potential is, for example, ground. The common wiring CL may be provided for each of the multiple magnetoresistive effect elements 10, or may be provided across the multiple magnetoresistive effect elements 10. Each of the read wirings RL electrically connects a power supply to one or more magnetoresistive effect elements 10. The power supply is connected to the magnetoresistive device 100 during use.

[0017] Each of the magnetoresistive elements 10 is electrically connected to a first switching element Sw1, a second switching element Sw2, and a third switching element Sw3. The first switching element Sw1 is connected between the magnetoresistive element 10 and a write wiring WL. The second switching element Sw2 is connected between the magnetoresistive element 10 and a common wiring CL. The third switching element Sw3 is connected to a read wiring RL that spans the multiple magnetoresistive elements 10.

[0018] When predetermined first switching element Sw1 and second switching element Sw2 are turned ON, a write current flows between the write wiring WL and the common wiring CL connected to the predetermined magnetoresistive effect element 10. The flow of the write current causes data to be written to the predetermined magnetoresistive effect element 10. When predetermined second switching element Sw2 and third switching element Sw3 are turned ON, a read current flows between the common wiring CL and the read wiring RL connected to the predetermined magnetoresistive effect element 10. The flow of the read current causes data to be read from the predetermined magnetoresistive effect element 10.

[0019] The first switching element Sw1, the second switching element Sw2, and the third switching element Sw3 are elements that control the flow of current. The first switching element Sw1, the second switching element Sw2, and the third switching element Sw3 may be, for example, an element that uses a phase change of a crystal layer such as a transistor or an Ovonic Threshold Switch (OTS), an element that uses a change in band structure such as a Metal-Insulator Transition (MIT) switch, an element that uses a breakdown voltage such as a Zener diode or an avalanche diode, or an element whose conductivity changes with a change in atomic position.

[0020] 1, the magnetoresistive effect elements 10 connected to the same read wiring RL share the third switching element Sw3. The third switching element Sw3 may be provided in each magnetoresistive effect element 10. Alternatively, the third switching element Sw3 may be provided in each magnetoresistive effect element 10, and the first switching element Sw1 or the second switching element Sw2 may be shared by magnetoresistive effect elements 10 connected to the same wiring.

[0021] 2 is a cross-sectional view of a characteristic portion of the magnetoresistive device 100 according to the first embodiment, taken along an xz plane passing through the center of the width in the y direction of a spin-orbit torque wiring 12, which will be described later.

[0022] The magnetoresistive device 100 includes a magnetoresistive element 10, a substrate 20, a first layer 30, a second layer 40, a first via wiring 50, a second via wiring 60, and a third via wiring 70. The magnetoresistive element 10 is an example of a first magnetoresistive element.

[0023] The substrate 20 is, for example, a semiconductor substrate. On the substrate 20, for example, a transistor Tr is formed. The transistor Tr is an example of the first switching element Sw1, the second switching element Sw2, and the third switching element Sw3. The transistor Tr is, for example, a field-effect transistor, and has a gate electrode G, a gate insulating film GI, and a source S and a drain D formed on the substrate 20. The source S and the drain D are determined by the direction of current flow, and are both active regions. The positional relationship between the source S and the drain D may be reversed. The transistors Tr are, for example, arranged in a matrix on the surface of the substrate 20.

[0024] The magnetoresistive element 10 includes a stack 11 and a spin orbit torque wiring 12. The periphery of the magnetoresistive element 10 is covered with an insulating layer 13. The insulating layer 13 is in the same layer as the magnetoresistive element 10 and covers the sidewall of the magnetoresistive element 10. The insulating layer 13 is made of, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ), silicon carbide (SiC), chromium nitride, silicon carbonitride (SiCN), silicon oxynitride (SiON), aluminum oxide (Al ２ O ３ ), zirconium oxide (ZrO ｘ ), magnesium oxide (MgO), aluminum nitride (AlN), etc.

[0025] Fig. 3 is an enlarged view of the vicinity of the magnetoresistive element 10 according to the first embodiment. Fig. 3 is a cross section of the magnetoresistive element 10 cut along the xz plane passing through the center of the width in the y direction of the spin orbit torque wiring 12. Fig. 4 is a plan view of the magnetoresistive element 10 as viewed from the z direction.

[0026] The magnetoresistive element 10 is a magnetoresistive element that utilizes spin orbit torque (SOT), and may be called a spin orbit torque type magnetoresistive element, a spin injection type magnetoresistive element, or a spin current magnetoresistive element.

[0027] The magnetoresistive element 10 is an element that records and stores data. The magnetoresistive element 10 records data as the resistance value in the z direction of the stack 11. The resistance value in the z direction of the stack 11 changes when a write current is applied along the spin orbit torque wiring 12 and spins are injected from the spin orbit torque wiring 12 into the stack 11. The resistance value in the z direction of the stack 11 can be read by applying a read current in the z direction of the stack 11.

[0028] The stack 11 is connected to the spin orbit torque wiring 12. The stack 11 is, for example, stacked on the spin orbit torque wiring 12. The positional relationship between the stack 11 and the spin orbit torque wiring 12 in the z direction may be reversed, and the spin orbit torque wiring 12 may, for example, be stacked on the stack 11.

[0029] The laminate 11 is a columnar body. The planar shape of the laminate 11 in the z direction is, for example, a circle, an ellipse, or a rectangle. The side surface of the laminate 11 is, for example, inclined with respect to the z direction.

[0030] The stack 11 includes, for example, a first ferromagnetic layer 1, a second ferromagnetic layer 2, a non-magnetic layer 3, an underlayer 4, a cap layer 5, and a mask layer 6. The resistance value of the stack 11 changes depending on the difference in the relative angle of magnetization between the first ferromagnetic layer 1 and the second ferromagnetic layer 2, which sandwich the non-magnetic layer 3.

[0031] The first ferromagnetic layer 1 faces, for example, the spin orbit torque wiring 12. The first ferromagnetic layer 1 may be in direct contact with the spin orbit torque wiring 12 or indirect contact with the spin orbit torque wiring 12 via the underlayer 4. The first ferromagnetic layer 1 is closer to the spin orbit torque wiring 12 than the second ferromagnetic layer 2.

[0032] Spins are injected into the first ferromagnetic layer 1 from the spin-orbit torque wiring 12. The magnetization of the first ferromagnetic layer 1 is subjected to a spin-orbit torque (SOT) by the injected spins, and the orientation of the magnetization changes. The first ferromagnetic layer 1 is called a magnetization free layer.

[0033] The first ferromagnetic layer 1 includes a ferromagnetic material, such as a metal selected from the group consisting of Cr, Mn, Co, Fe, and Ni, an alloy containing one or more of these metals, or an alloy containing one or more of these metals and at least one of B, C, and N. Examples of the ferromagnetic material include Co—Fe, Co—Fe—B, Ni—Fe, a Co—Ho alloy, a Sm—Fe alloy, a Fe—Pt alloy, a Co—Pt alloy, and a CoCrPt alloy.

[0034] The first ferromagnetic layer 1 may include a Heusler alloy. The Heusler alloy may be an XYZ or X ２ The Heusler alloy includes an intermetallic compound having a chemical composition of YZ, where X is a transition metal element or a noble metal element of the Co, Fe, Ni, or Cu group on the periodic table, Y is a transition metal element or an element species of X of the Mn, V, Cr, or Ti group, and Z is a typical element of groups III to V. The Heusler alloy is, for example, Co ２ FeSi, Co ２ FeGe, Co ２ FeGa, Co ２ MnSi, Co ２ Mn １－ａ Fe ａ Al ｂ Si １－ｂ , Co ２ FeGe １－ｃ Ga ｃ etc. Heusler alloys have high spin polarization.

[0035] The second ferromagnetic layer 2 faces the first ferromagnetic layer 1 with a nonmagnetic layer 3 sandwiched therebetween. The second ferromagnetic layer 2 includes a ferromagnetic material. The magnetization of the second ferromagnetic layer 2 is less likely to change orientation than the magnetization of the first ferromagnetic layer 1 when a predetermined external force is applied. The second ferromagnetic layer 2 is also called a magnetization fixed layer or a magnetization reference layer. The magnetoresistive element 10 shown in FIG. 3 has a magnetization fixed layer farther from the substrate 20 than the magnetization free layer, and is called a top-pin structure. The magnetoresistive element 10 may also have a bottom-pin structure in which the magnetization fixed layer is closer to the substrate 20 than the magnetization free layer.

[0036] The material constituting the second ferromagnetic layer 2 is the same as the material constituting the first ferromagnetic layer 1. The first ferromagnetic layer 1 and the second ferromagnetic layer 2 may contain the same material or different materials.

[0037] The second ferromagnetic layer 2 may have a synthetic antiferromagnetic structure (SAF structure). A synthetic antiferromagnetic structure is composed of two magnetic layers sandwiching a nonmagnetic layer. The second ferromagnetic layer 2 may have two magnetic layers and a spacer layer sandwiched between them. Antiferromagnetic coupling between the two ferromagnetic layers increases the coercive force of the second ferromagnetic layer 2. The ferromagnetic layer may be, for example, IrMn or PtMn. The spacer layer may include, for example, at least one selected from the group consisting of Ru, Ir, and Rh.

[0038] The non-magnetic layer 3 is sandwiched between the first ferromagnetic layer 1 and the second ferromagnetic layer 2. The non-magnetic layer 3 includes a non-magnetic material. When the non-magnetic layer 3 is an insulator (when it is a tunnel barrier layer), its material may be, for example, Al ２ O ３ , SiO ２ , MgO, and MgAl ２ O ４ In addition to these, materials in which a part of Al, Si, or Mg is replaced with Zn, Be, or the like can also be used. Among these, MgO and MgAl ２ O ４ Since it is a material that can realize coherent tunneling, spins can be efficiently injected. When the non-magnetic layer 3 is a metal, its material can be Cu, Au, Ag, etc. Furthermore, when the non-magnetic layer 3 is a semiconductor, its material can be Si, Ge, CuInSe, etc. ２ , CuGaSe ２ , Cu(In,Ga)Se ２ etc. can be used.

[0039] The underlayer 4 is, for example, between the first ferromagnetic layer 1 and the spin-orbit torque wiring 12. The underlayer 4 may be omitted.

[0040] The underlayer 4 includes, for example, a buffer layer and a seed layer. The buffer layer is a layer that alleviates lattice mismatch between different crystals. The seed layer improves the crystallinity of the layer stacked on the seed layer. The seed layer is formed on, for example, the buffer layer.

[0041] The buffer layer is, for example, Ta (element), TaN (tantalum nitride), CuN (copper nitride), TiN (titanium nitride), or NiAl (nickel aluminum).The seed layer is, for example, Pt, Ru, Zr, a NiCr alloy, or NiFeCr.

[0042] The cap layer 5 is on the second ferromagnetic layer 2. The cap layer 5, for example, strengthens the magnetic anisotropy of the second ferromagnetic layer 2. The cap layer 5, for example, strengthens the perpendicular magnetic anisotropy of the second ferromagnetic layer 2. The cap layer 5 is made of, for example, magnesium oxide, W, Ta, Mo, or the like. The thickness of the cap layer 5 is, for example, 0.5 nm or more and 5.0 nm or less.

[0043] The mask layer 6 is on the cap layer 5. The mask layer 6 is part of a hard mask used when processing the stack 11 during manufacturing. The mask layer 6 also functions as an electrode. The mask layer 6 may be made of, for example, Al, Cu, Ta, Ti, Zr, NiCr, nitrides (e.g., TiN, TaN, SiN), oxides (e.g., SiO ２ ) is included.

[0044] The stack 11 may include layers other than the first ferromagnetic layer 1 , the second ferromagnetic layer 2 , the non-magnetic layer 3 , the underlayer 4 , the cap layer 5 and the mask layer 6 .

[0045] The spin-orbit torque wire 12 extends in the x direction, for example, such that the length in the x direction is longer than the length in the y direction when viewed from the z direction. A write current flows in the x direction along the spin-orbit torque wire 12 between the first via wire 50 and the second via wire 60.

[0046] The spin-orbit torque wiring 12 generates a spin current by the spin Hall effect when a current flows, and injects spins into the first ferromagnetic layer 1. The spin-orbit torque wiring 12 applies a spin-orbit torque (SOT) to the magnetization of the first ferromagnetic layer 1 that is sufficient to reverse the magnetization of the first ferromagnetic layer 1, for example.

[0047] The spin Hall effect is a phenomenon in which, when an electric current is passed through it, a spin current is induced in a direction perpendicular to the direction of the electric current due to spin-orbit interaction. The spin Hall effect is similar to the standard Hall effect in that the direction of movement of moving charges (electrons) is bent. In the standard Hall effect, the direction of movement of charged particles moving in a magnetic field is bent by the Lorentz force. In contrast, in the spin Hall effect, the direction of spin movement is bent simply by the movement of electrons (the flow of electric current), even in the absence of a magnetic field.

[0048] For example, when a current flows through the spin-orbit torque wiring 12, the first spin polarized in one direction and the second spin polarized in the opposite direction to the first spin are bent by the spin Hall effect in a direction perpendicular to the direction of the current flow. For example, the first spin polarized in the -y direction is bent from the x direction, which is the direction of travel, to the +z direction, and the second spin polarized in the +y direction is bent from the x direction, which is the direction of travel, to the -z direction.

[0049] In non-magnetic materials (materials that are not ferromagnetic), the number of electrons with the first spin generated by the spin Hall effect is equal to the number of electrons with the second spin. In other words, the number of electrons with the first spin facing the +z direction is equal to the number of electrons with the second spin facing the -z direction. The first spins and second spins flow in a direction that eliminates the uneven distribution of spin. When the first spins and second spins move in the z direction, the flow of electric charges cancels each other out, so the amount of current is zero. Spin current that does not involve current is specifically called pure spin current.

[0050] The flow of electrons with the first spin is called J ↑ , the flow of electrons of the second spin is J ↓ , the spin current is J Ｓ Then, J Ｓ =J ↑ -J ↓ The spin current J is defined as Ｓ is generated in the z direction. The first spin is injected from the spin orbit torque wiring 12 into the first ferromagnetic layer 1.

[0051] The spin-orbit torque wiring 12 includes any one of a metal, alloy, intermetallic compound, metal boride, metal carbide, metal silicide, metal phosphide, and metal nitride, which has the function of generating a spin current by the spin Hall effect when a write current flows. The spin-orbit torque wiring 12 includes, for example, any one selected from the group consisting of heavy metals with atomic numbers of 39 or more, metal oxides, metal nitrides, metal oxynitrides, and topological insulators.

[0052] The spin orbit torque wire 12 contains, for example, a non-magnetic heavy metal as a main component. Heavy metal means a metal with a specific gravity equal to or greater than that of yttrium (Y). The non-magnetic heavy metal is, for example, a non-magnetic metal with a large atomic number equal to or greater than 39 that has d electrons or f electrons in its outermost shell. The spin orbit torque wire 12 is made of, for example, Hf, Ta, or W. The non-magnetic heavy metal generates a stronger spin orbit interaction than other metals. The spin Hall effect is generated by the spin orbit interaction, and spins tend to be unevenly distributed in the spin orbit torque wire 12, causing a spin current J. Ｓ is more likely to occur.

[0053] The spin orbit torque wiring 12 may also contain a magnetic metal. The magnetic metal is a ferromagnetic metal or an antiferromagnetic metal. A trace amount of magnetic metal contained in a non-magnetic material acts as a scattering factor for spin. A trace amount is, for example, 3% or less of the total molar ratio of the elements constituting the spin orbit torque wiring 12. When spins are scattered by the magnetic metal, the spin orbit interaction is enhanced, and the efficiency of generating a spin current relative to an electric current increases.

[0054] The spin-orbit torque wiring 12 may include a topological insulator. A topological insulator is a material whose interior is an insulator or a highly resistive material, but whose surface exhibits a spin-polarized metallic state. In a topological insulator, an internal magnetic field is generated due to spin-orbit interaction. In a topological insulator, a new topological phase emerges due to the effect of spin-orbit interaction even in the absence of an external magnetic field. A topological insulator can generate pure spin currents with high efficiency due to the strong spin-orbit interaction and the breaking of inversion symmetry at the edges.

[0055] Topological insulators include, for example, SnTe, Bi １．５ Sb０．５ Te １．７ Se １．３ , TlBiSe ２ , Bi ２ Te ３ , Bi １－ｘ Sb ｘ , (Bi １－ｘ Sb ｘ ) ２ Te ３ Topological insulators are capable of generating spin currents with high efficiency.

[0056] The spin-orbit torque wiring 12 is not limited to a single layer, but may be a laminate of multiple layers. The spin-orbit torque wiring 12 may have, for example, multiple heavy metal layers and an insertion layer sandwiched between them.

[0057] The first layer 30 is sandwiched between the substrate 20 and the magnetoresistive element 10. The first layer 30 is an interlayer insulating film that provides insulation between the substrate 20 and the magnetoresistive element 10.

[0058] The first layer 30 includes, for example, a magnetic layer 31, a first insulating layer 32, and a second insulating layer 33. The magnetic layer 31 is an example of a first magnetic layer.

[0059] The magnetic layer 31 extends in a layered form in the xy plane, for example, and prevents an external magnetic field from affecting the magnetoresistive element 10.

[0060] The magnetic layer 31 includes an insulating magnetic material. The magnetic layer 31 is an insulator, which can suppress the occurrence of current leakage and the like. Furthermore, metallic magnetic materials may undergo elemental diffusion during annealing and other processes, which may adversely affect the semiconductor circuit and the magnetoresistive effect element. Insulating magnetic materials already form compounds, making them less susceptible to elemental diffusion.

[0061] The magnetic layer 31 includes, for example, an oxide. The oxide includes, for example, at least a magnetic element and oxygen. The oxide is, for example, ferrite. The ferrite includes, for example, one or more atoms selected from the group consisting of Mn, Zn, Ni, Cu, Ba, Sr, Pb, and Co, Fe, and O.

[0062] The first insulating layer 32 is located between the substrate 20 and the magnetic layer 31. If the substrate 20 on which the semiconductor element is formed is in direct contact with the magnetic layer 31, the magnetic field from the magnetic layer 31 may adversely affect the semiconductor element. This effect can be suppressed by sandwiching the first insulating layer 32 between the substrate 20 and the magnetic layer 31. The first insulating layer 32 may be made of, for example, the same material as the insulating layer 13.

[0063] The second insulating layer 33 is located between the magnetic layer 31 and the magnetoresistive element 10. By sandwiching the second insulating layer 33 between the magnetic layer 31 and the magnetoresistive element 10, it is possible to suppress the magnetic field from the magnetic layer 31 from affecting the magnetoresistive element 10. The second insulating layer 33 can be made of, for example, the same material as the insulating layer 13.

[0064] The second layer 40 is located farther from the substrate 20 in the z direction than the magnetoresistive element 10. The second layer 40 extends in a layered form in the xy plane. The second layer 40 covers the upper part of the magnetoresistive element 10. The second layer 40 is an insulating layer, and can be made of, for example, the same material as the insulating layer 13.

[0065] The first via wiring 50 is connected to the spin orbit torque wiring 12 of the magnetoresistive element 10. The first via wiring 50, for example, penetrates the magnetic layer 31 in the z direction. The first via wiring 50 is a wiring that electrically connects the transistor Tr (first switching element Sw1) and the magnetoresistive element 10.

[0066] The first via wiring 50 is a columnar body. The first via wiring 50 may be a stack of a plurality of columnar bodies. The columnar body may be, for example, a circular cylinder, an elliptical cylinder, or a rectangular cylinder.

[0067] The first via wiring 50 includes, for example, an electrode 51 and a wiring 52 .

[0068] The electrode 51 is in contact with the spin orbit torque wiring 12. The electrode 51 contains, for example, a metal or alloy containing W, Ta, Ru, or Co, or a nitride of Ti, V, Cr, Zr, Nb, Mo, Ta, or W.

[0069] These elements are difficult to diffuse. Cu, Al, etc. used in the wiring 52 are easily diffused, and if they diffuse into the spin orbit torque wiring 12, they will degrade the characteristics of the spin orbit torque wiring 12. If there is an electrode 51 between the wiring 52 and the spin orbit torque wiring 12, electromigration from the wiring 52 to the spin orbit torque wiring 12 can be suppressed.

[0070] Furthermore, the above materials are relatively hard. Therefore, when the surfaces of the second insulating layer 33 and the electrode 51 are planarized by chemical mechanical polishing (CMP), a flat surface is easily formed. The spin orbit torque wire 12 is formed on the second insulating layer 33 and the electrode 51. If this surface is flat, the spin orbit torque wire 12 also becomes flat, and the efficiency of spin injection from the spin orbit torque wire 12 to the first ferromagnetic layer 1 is improved.

[0071] The wiring 52 extends in the z-direction from the electrode 51. The wiring 52 includes a conductive material such as Cu or Al.

[0072] 5 is an enlarged view of a characteristic portion of the magnetoresistive device 100 according to the first embodiment. FIG. 5 is an enlarged view of the vicinity of the magnetic layer 31 of the first via interconnect 50.

[0073] The first via wiring 50 penetrates the first layer 30. An interface I1 between the first via wiring 50 and the magnetic layer 31 is inclined with respect to the z direction. An interface I2 between the first via wiring 50 and the first insulating layer 32 is inclined with respect to the z direction. The inclination angle θ1 of the interface I1 with respect to the z direction is, for example, larger than the inclination angle θ2 of the interface I2 with respect to the z direction. When the inclination angle θ1 of the interface I1 with respect to the z direction is large, the volume of the magnetic layer 31 on the side closer to the substrate 20 can be increased. Because an external magnetic field is irradiated onto the magnetoresistive effect element 10 from, for example, the substrate 20 side, the influence of the external magnetic field on the magnetoresistive effect element 10 can be reduced by increasing the volume of the magnetic layer 31 on the substrate 20 side.

[0074] The second via wire 60 is connected to the spin orbit torque wire 12 of the magnetoresistive element 10 at a position different from that of the first via wire 50. When viewed from the z direction, the second via wire 60 and the first via wire 50 are located at a position sandwiching the first ferromagnetic layer 1 therebetween. The second via wire 60 is connected to, for example, the same surface of the spin orbit torque wire 12 as the surface to which the first via wire 50 is connected. The second via wire 60, for example, penetrates the magnetic layer 31 in the z direction. The second via wire 60 is a wire that electrically connects the transistor Tr (first switching element Sw2) and the magnetoresistive element 10.

[0075] The second via wiring 60 is a columnar body. The second via wiring 60 may be a stack of a plurality of columnar bodies. The columnar body may be, for example, a circular cylinder, an elliptical cylinder, or a rectangular cylinder.

[0076] The second via wiring 60 includes, for example, an electrode 61 and a wiring 62 .

[0077] The electrode 61 is in contact with the spin orbit torque wire 12. The electrode 61 contains, for example, a metal or alloy containing W, Ta, Ru, or Co, or a nitride of Ti, V, Cr, Zr, Nb, Mo, Ta, or W. The electrode 61 suppresses electromigration from the wire 62 to the spin orbit torque wire 12.

[0078] The wiring 62 extends in the z-direction from the electrode 61. The wiring 62 includes a conductive material such as Cu or Al.

[0079] The second via wiring 60 penetrates the first layer 30. The inclination angle θ1 of the interface between the second via wiring 60 and the magnetic layer 31 with respect to the z direction is greater than the inclination angle θ2 of the interface between the first via wiring 50 and the first insulating layer 32 with respect to the z direction, for example.

[0080] The third via wiring 70 is connected to the stacked body 11. When data is read from the magnetoresistive element 10, a read current flows through the third via wiring 70. The third via wiring 70 includes a material having electrical conductivity.

[0081] Next, a method for manufacturing the magnetoresistive device 100 will be described. The magnetoresistive device 100 is formed by a process of stacking each layer and a process of processing a portion of each layer into a predetermined shape. The stacking of each layer can be performed using a sputtering method, a chemical vapor deposition (CVD) method, an electron beam evaporation method (EB evaporation method), an atomic laser deposition method, or the like. The processing of each layer can be performed using photolithography, or the like.

[0082] For example, a first insulating layer 32, a magnetic layer 31, and a second insulating layer 33 are stacked in this order on a substrate 20 on which a transistor Tr is formed, to form a first layer 30. Next, openings are formed in the first layer 30, and the openings are filled with a conductor, thereby forming a first via wiring 50 and a second via wiring 60.

[0083] Next, the surfaces of the first layer 30, the first via wiring 50, and the second via wiring 60 are chemically mechanically polished. When the first via wiring 50 has an electrode 51, the step at the boundary between the electrode 51 and the first layer 30 is reduced. Also, when the second via wiring 60 has an electrode 61, the step at the boundary between the electrode 61 and the first layer 30 is reduced.

[0084] Next, a layer to become the spin orbit torque wiring, a layer to become the first ferromagnetic layer 1, a layer to become the non-magnetic layer 3, and a layer to become the second ferromagnetic layer 2 are stacked in this order on the first layer 30. These layers are then processed into a predetermined shape to form the magnetoresistive element 10 including the stacked body 11 and the spin orbit torque wiring 12. Next, an insulating layer 13 is applied so as to cover the magnetoresistive element 10. Next, the surface of the insulating layer 13 is chemically mechanically polished to expose the surface of the stacked body 11.

[0085] Next, the second layer 40 is formed on the surfaces of the insulating layer 13 and the laminate 11. An opening is formed in the second layer 40 and filled with a conductor to form the third via wiring 70, the read wiring RL, etc. By this procedure, the magnetoresistive device 100 according to this embodiment can be fabricated.

[0086] The magnetoresistive device 100 according to the first embodiment includes the magnetic layer 31, which can reduce the influence of an external magnetic field on the magnetoresistive element 10. In particular, the effect of having the magnetic layer 31 is significant because the spin-orbit torque is easily influenced by external magnetic fields, environmental temperature, and the like. Furthermore, since the magnetic layer 31 is an insulating magnetic material, current leakage from the semiconductor circuit and the magnetoresistive element 10 to the magnetic layer 31 can be suppressed. Furthermore, since the magnetic layer 31 is an insulating magnetic material, element diffusion from the magnetic layer 31 can be suppressed.

[0087] 6 is a cross-sectional view of a magnetoresistive device 101 according to a second embodiment. The magnetoresistive device 101 according to the second embodiment differs from the magnetoresistive device 100 according to the first embodiment in the configuration of the second layer 40. In the magnetoresistive device 101 according to the second embodiment, components similar to those in the magnetoresistive device 100 are designated by the same reference numerals and will not be described again.

[0088] The second layer 40 includes a magnetic layer 41, a first insulating layer 42, and a second insulating layer 43. The magnetic layer 41 in the second embodiment is an example of a second magnetic layer.

[0089] The magnetic layer 41 extends in a layered form in the xy plane, for example. The magnetic layer 41 suppresses the influence of an external magnetic field on the magnetoresistive effect element 10. The magnetic layer 41 includes an insulating magnetic material. The magnetic layer 41 includes, for example, an oxide. The oxide includes, for example, at least a magnetic element and oxygen. The oxide is, for example, ferrite. The ferrite includes, for example, one or more atoms selected from the group consisting of Mn, Zn, Ni, Cu, Ba, Sr, Pb, and Co, Fe, and O.

[0090] The first insulating layer 42 is located between the magnetoresistive element 10 and the magnetic layer 41. The second insulating layer 43 is located at a position away from the substrate 20 of the magnetic layer 41. The first insulating layer 42 and the second insulating layer 43 can be made of, for example, the same material as the insulating layer 13.

[0091] In the magnetoresistive device 101 according to the second embodiment, the magnetoresistive element 10 is sandwiched between the magnetic layer 31 and the magnetic layer 41, and therefore the influence of an external magnetic field on the magnetoresistive element 10 can be further reduced.

[0092] 7 is a cross-sectional view of a magnetoresistive device 102 according to a third embodiment. The magnetoresistive device 102 according to the third embodiment differs from the magnetoresistive device 100 according to the first embodiment in the configurations of the first layer 30 and the second layer 40. In the magnetoresistive device 102 according to the third embodiment, the same components as those in the magnetoresistive device 100 are denoted by the same reference numerals, and their description will be omitted.

[0093] The first layer 30 of the magnetoresistive device 102 is a single insulating layer extending in the xy plane. The first layer 30 can be made of, for example, the same material as the insulating layer 13.

[0094] The second layer 40 includes a magnetic layer 41, a first insulating layer 42, and a second insulating layer 43. The magnetic layer 41 in the third embodiment is an example of a first magnetic layer. The configurations of the magnetic layer 41, the first insulating layer 42, and the second insulating layer 43 are similar to those of the magnetoresistive device 101 according to the second embodiment.

[0095] The magnetoresistive device 102 according to the third embodiment includes the magnetic layer 41, and therefore can reduce the influence of an external magnetic field on the magnetoresistive element 10.

[0096] 8 is a cross-sectional view of a magnetoresistive device 103 according to a fourth embodiment. The magnetoresistive device 103 according to the fourth embodiment differs from the magnetoresistive device 100 according to the first embodiment in the configuration of the first layer 30. In the magnetoresistive device 103 according to the fourth embodiment, components similar to those in the magnetoresistive device 100 are denoted by the same reference numerals and will not be described again.

[0097] The first layer 30 of the magnetoresistive device 103 is made of a single magnetic layer 31 extending in the xy plane. The magnetic layer 31 has insulating properties and therefore functions as an interlayer insulating film even as a single layer.

[0098] The magnetoresistive device 103 according to the fourth embodiment has the same effects as the magnetoresistive device 100 according to the first embodiment.

[0099] 9 is a cross-sectional view of a magnetoresistive device 104 according to a fifth embodiment. The magnetoresistive device 104 according to the fifth embodiment differs from the magnetoresistive device 100 according to the first embodiment in the configuration of the first layer 30. In the magnetoresistive device 104 according to the fifth embodiment, components similar to those in the magnetoresistive device 100 are denoted by the same reference numerals and will not be described again.

[0100] The first layer 30 of the magnetoresistive device 104 includes a magnetic layer 34 and an insulating layer 35. The magnetic layer 34 is an example of a first magnetic layer. The magnetic layer 34 is made of the same material as the magnetic layer 31. The insulating layer 35 is made of the same material as the insulating layer 13.

[0101] The magnetic layer 34 is located between the first via wiring 50 and the second via wiring 60 when viewed from the z direction. The magnetic layer 34 is located, for example, at a position overlapping the stack 11 when viewed from the z direction. The insulating layer 35 covers the periphery of the magnetic layer 34.

[0102] The first ferromagnetic layer 1 of the stack 11 is particularly susceptible to the influence of external magnetic fields. By providing a magnetic layer 34 that blocks the external magnetic field at a pinpoint where the influence of the external magnetic field is greatest, the influence of the external magnetic field on the magnetoresistive device 104 can be reduced. Furthermore, by providing the magnetic layer 34 at a pinpoint, a decrease in the integration of the magnetoresistive device 104 due to the formation of the magnetic layer 34 can be suppressed.

[0103] The magnetoresistive device 104 according to the fifth embodiment has the same effects as the magnetoresistive device 100 according to the first embodiment.

[0104] Sixth Embodiment Figure 10 is a cross-sectional view of a magnetoresistive device 105 according to a sixth embodiment. The magnetoresistive device 105 according to the sixth embodiment differs from the magnetoresistive device 100 according to the first embodiment in that it further includes a magnetoresistive effect element 10'. The magnetoresistive device 105 according to the sixth embodiment also differs from the magnetoresistive device 100 according to the first embodiment in the configuration of the first layer 30. In the magnetoresistive device 105 according to the sixth embodiment, components similar to those in the magnetoresistive device 100 are designated by similar reference numerals and will not be described again.

[0105] The magnetoresistive device 105 has another magnetoresistive element 10' in addition to the magnetoresistive element 10. The magnetoresistive element 10' has a configuration similar to that of the magnetoresistive element 10, and includes a stacked body 11 and a spin orbit torque wiring 12. The magnetoresistive element 10' is located in the same layer as the magnetoresistive element 10. A first via wiring 50 and a second via wiring 60 are connected to the magnetoresistive element 10'. The magnetoresistive element 10' is adjacent to the magnetoresistive element 10 in the x direction, for example. The magnetoresistive element 10' may also be adjacent to the magnetoresistive element 10 in the y direction.

[0106] The first layer 30 of the magnetoresistive device 105 includes a magnetic layer 36 and an insulating layer 37. The magnetic layer 36 is an example of a first magnetic layer. The magnetic layer 36 is made of the same material as the magnetic layer 31. The insulating layer 37 is made of the same material as the insulating layer 13.

[0107] The magnetic layer 36 is located between the magnetoresistive element 10 and the magnetoresistive element 10' when viewed in the z direction.

[0108] The magnetoresistive device 105 according to the sixth embodiment has the same effects as the magnetoresistive device 100 according to the first embodiment. In addition, the presence of the magnetic layer 36 between adjacent elements can reduce the influence of the magnetic field between the adjacent elements.

[0109] 11 is a plan view of a magnetoresistive device 106 according to a seventh embodiment. The magnetoresistive device 106 according to the seventh embodiment differs from the magnetoresistive device 105 according to the sixth embodiment in the configuration of the first layer 30. In the magnetoresistive device 106 according to the seventh embodiment, components similar to those in the magnetoresistive device 105 are denoted by the same reference numerals, and descriptions thereof will be omitted.

[0110] The magnetoresistive device 106 has a different shape of the magnetic layer 38 in the first layer 30 from the magnetic layer 36 of the magnetoresistive device 105. The magnetic layer 38 is an example of a first magnetic layer.

[0111] When viewed from the z direction, the magnetic layer 38 surrounds the periphery of each of the first via wiring 50 and the second via wiring 60. The magnetic layer 38 is made of the same material as the magnetic layer 31.

[0112] The magnetoresistive device 106 according to the seventh embodiment has the same effects as the magnetoresistive device 100 according to the first embodiment. In addition, the magnetoresistive device 106 can form a magnetic flux in a ring shape along the magnetic layer 38, and can further suppress the influence of an external magnetic field on the magnetoresistive effect element 10.

[0113] 12 is a plan view of a magnetoresistive device 106A according to a first modification of the seventh embodiment. The magnetic layer 38A shown in FIG. 12 surrounds a pair of a first via wire 50 and a second via wire 60 when viewed from the z direction. The pair of a first via wire 50 and a second via wire 60 may be connected to the same spin orbit torque wire 12, or may not be connected to the same spin orbit torque wire 12. The magnetic layer 38A may also surround two or more via wires (the first via wire 50 or the second via wire 60). In the magnetoresistive device 106A according to the first modification, a ring-shaped magnetic flux can be formed along the magnetic layer 38A, further suppressing the influence of an external magnetic field on the magnetoresistive effect element 10.

[0114] 13 is a plan view of a magnetoresistive device 106B according to a second modification of the seventh embodiment. The magnetic layers 38B shown in FIG. 13 include a plurality of magnetic layers 38B. When viewed from the z direction, the magnetic layers 38B are located between the first via wirings 50 and the second via wirings 60 of the magnetoresistive elements 10′ belonging to the first row and between the magnetoresistive elements 10′ belonging to the second row.

[0115] Although the magnetic layers 38B are not connected to each other, they can form a circular magnetic flux. Therefore, the magnetoresistive device 106B according to the second modification can also further suppress the influence of external magnetic fields on the magnetoresistive effect element 10. Furthermore, the positions of the magnetic layers 38B are shifted for each column of the magnetoresistive effect elements arranged in a matrix. By arranging the magnetic layers 38B, which are structures, in effective positions, it is possible to suppress deterioration in the integration of the magnetoresistive effect element 106B.

[0116] 14 is a cross-sectional view of a magnetoresistive device 107 according to an eighth embodiment. The magnetoresistive device 107 according to the eighth embodiment differs from the magnetoresistive device 102 according to the third embodiment in the configuration of the second layer 40. In the magnetoresistive device 107 according to the eighth embodiment, components similar to those in the magnetoresistive device 102 are denoted by the same reference numerals and will not be described again.

[0117] The second layer 40 includes a magnetic layer 44 and an insulating layer 45. The magnetic layer 44 in the eighth embodiment is an example of a first magnetic layer.

[0118] The magnetic layer 44 covers, for example, the periphery of the third via wiring 70. The magnetic layer 44 is made of the same material as the magnetic layer 41. The insulating layer 45 covers the periphery of the magnetic layer 44. The insulating layer 45 is made of, for example, the same material as the insulating layer 13.

[0119] The magnetoresistive device 107 according to the eighth embodiment has the same effects as the magnetoresistive device 100 according to the first embodiment. The magnetic layer 44 also suppresses the influence of an external magnetic field on the magnetoresistive effect element 10, and reduces the magnetic field generated from the third via wiring 70 when a current flows through the third via wiring 70.

[0120] 15 is a cross-sectional view of a magnetoresistive device 108 according to a ninth embodiment. In the magnetoresistive device 108 according to the ninth embodiment, the same components as those in the magnetoresistive device 100 are denoted by the same reference numerals, and description thereof will be omitted.

[0121] The magnetoresistive device 108 includes a magnetoresistive effect element 15 , a substrate 20 , a first layer 30 , a second layer 40 , a first via wiring 50 , and a third via wiring 70 .

[0122] The magnetoresistive element 15 is made up of a stack 11. The magnetoresistive element 15 is a spin-transfer torque type magnetoresistive element in which the orientation direction of the magnetization of the first ferromagnetic layer 1 changes due to spin-transfer torque. A spin-transfer torque type magnetoresistive element is a two-terminal type element that passes current in the stacking direction of the stack 11 both during writing and reading. Therefore, the magnetoresistive device 108 does not have a second via wiring 60 or a second switching element Sw2.

[0123] The magnetoresistive device 108 according to the ninth embodiment includes the magnetic layer 31, which reduces the influence of an external magnetic field on the magnetoresistive element 15. A spin-transfer torque type magnetoresistive element is less susceptible to the influence of an external magnetic field than a spin-orbit torque type magnetoresistive element, but is still affected by the external magnetic field. Therefore, even when the magnetoresistive element is a spin-transfer torque type magnetoresistive element, reducing the influence of the external magnetic field contributes to improving the reliability of the magnetoresistive device 108.

[0124] Although several embodiments have been given so far to illustrate preferred aspects of the present invention, the present invention is not limited to these embodiments. For example, the characteristic configurations of each embodiment may be applied to other embodiments and modified examples.

[0125] REFERENCE SIGNS LIST 1 First ferromagnetic layer 2 Second ferromagnetic layer 3 Non-magnetic layer 10, 10', 15 Magnetoresistive element 11 Stacked body 12 Spin orbit torque wiring 20 Substrate 30 First layer 31, 34, 36, 38, 38A, 38B, 41, 44 Magnetic layer 32, 42 First insulating layer 33, 43 Second insulating layer 35, 37, 45 Insulating layer 40 Second layer 50 First via wiring 51, 61 Electrode 52, 62 Wiring 60 Second via wiring 70 Third via wiring 100, 101, 102, 103, 104, 105, 106, 106A, 106B, 107, 108, 109 Magnetoresistive device I1, I2 Interface θ1, θ2 Tilt angle

Claims

1. A substrate; a first magnetoresistive element; a first layer sandwiched between the substrate and the first magnetoresistive element; a second layer located farther from the substrate than the first magnetoresistive element in a stacking direction; the first magnetoresistive element includes a stacked body and a spin orbit torque wiring in contact with the stacked body; the stacked body includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, Only one of the first layer and the second layer has an insulating first magnetic layer. Or, A magnetoresistive device, wherein the first layer has an insulating first magnetic layer, the second layer has an insulating second magnetic layer, and the first magnetic layer and the second magnetic layer are electrically separated.

2. The magnetoresistive device of claim 1 , wherein the first layer comprises an insulating first magnetic layer.

3. The magnetoresistive device of claim 2 , wherein the first layer comprises a first insulating layer between the first magnetic layer and the substrate.

4. The magnetoresistive device of claim 2 , wherein the first layer includes a second insulating layer between the first magnetic layer and the first magnetoresistive element.

5. the first layer includes an insulating first magnetic layer; The magnetoresistive device of claim 1 , wherein the second layer comprises an insulating second magnetic layer.

6. The magnetoresistive device according to claim 1 , wherein the first magnetic layer includes an oxide containing at least a magnetic element and oxygen.

7. the first magnetic layer includes ferrite, 2. The magnetoresistive device of claim 1, wherein the ferrite contains one or more atoms selected from the group consisting of Mn, Zn, Ni, Cu, Ba, Sr, Pb, and Co, Fe, and O.

8. a first via interconnect connected to the spin-orbit torque interconnect; a second via wire connected to the spin-orbit torque wire at a position different from that of the first via wire, The magnetoresistive device according to claim 1 , wherein the first via interconnect or the second via interconnect comprises an electrode in contact with the spin orbit torque interconnect and an interconnect extending from the electrode in the stacking direction.

9. 9. The magnetoresistive device of claim 8, wherein the electrodes comprise a metal or alloy including W, Ta, Ru, Co, or nitrides of Ti, V, Cr, Zr, Nb, Mo, Ta, W.

10. a first via interconnect connected to the spin-orbit torque interconnect; a second via wire connected to the spin-orbit torque wire at a position different from that of the first via wire, The magnetoresistive device according to claim 1 , wherein at least one of the first via wiring and the second via wiring penetrates the first magnetic layer.

11. a first via interconnect connected to the spin-orbit torque interconnect; a second via wire connected to the spin-orbit torque wire at a position different from that of the first via wire, The magnetoresistive device according to claim 1 , wherein the first magnetic layer is located between the first via wiring and the second via wiring when viewed from the stacking direction.

12. Further comprising a plurality of magnetoresistive effect elements, each of the plurality of magnetoresistive effect elements is located at the same layer as the first magnetoresistive effect element in a stacking direction; each of the plurality of magnetoresistive effect elements includes the stack and the spin-orbit torque wiring; The magnetoresistive device according to claim 1 , wherein the first magnetic layer is located between the first magnetoresistive element and a magnetoresistive element adjacent to the first magnetoresistive element when viewed from the stacking direction.

13. Further comprising a plurality of magnetoresistive effect elements, each of the plurality of magnetoresistive effect elements is located at the same layer as the first magnetoresistive effect element in a stacking direction; each of the plurality of magnetoresistive effect elements includes the stack and the spin-orbit torque wiring; a first via wiring and a second via wiring are connected to the spin orbit torque wiring of the first magnetoresistive element and each of the plurality of magnetoresistive elements; The magnetoresistive device according to claim 1 , wherein the first magnetic layer surrounds each of the first via wiring and the second via wiring when viewed from the stacking direction.

14. Further comprising a plurality of magnetoresistive effect elements, each of the plurality of magnetoresistive effect elements is located at the same layer as the first magnetoresistive effect element in a stacking direction; each of the plurality of magnetoresistive effect elements includes the stack and the spin-orbit torque wiring; a first via wiring and a second via wiring are connected to the spin orbit torque wiring of the first magnetoresistive element and each of the plurality of magnetoresistive elements; the first magnetoresistive element and the plurality of magnetoresistive elements are arranged in a matrix; The magnetoresistive device of claim 1, wherein the first magnetic layer is located, when viewed from the stacking direction, between the first via wiring and the second via wiring of each magnetoresistive effect element belonging to a first column, and between magnetoresistive effect elements belonging to a second column adjacent to the first column.

15. Further comprising a plurality of magnetoresistive effect elements, each of the plurality of magnetoresistive effect elements is located at the same layer as the first magnetoresistive effect element in a stacking direction; each of the plurality of magnetoresistive effect elements includes the stack and the spin-orbit torque wiring; a first via wiring and a second via wiring are connected to the spin orbit torque wiring of the first magnetoresistive element and each of the plurality of magnetoresistive elements; The magnetoresistive device according to claim 1 , wherein the first magnetic layer surrounds a pair of the first via wiring and the second via wiring when viewed from the stacking direction.

16. a first via interconnect connected to the spin-orbit torque interconnect; a second via wire connected to the spin-orbit torque wire at a position different from that of the first via wire, the first via wiring penetrates the first magnetic layer and the first insulating layer; The magnetoresistive device according to claim 3 , wherein an inclination angle of the interface between the first via wiring and the first magnetic layer with respect to the stacking direction is larger than an inclination angle of the interface between the first via wiring and the first insulating layer with respect to the stacking direction.

17. a third via wiring connected to the laminate; the second layer has an insulating first magnetic layer; The magnetoresistive device according to claim 1 , wherein the first magnetic layer covers the periphery of the third via wiring.

18. A substrate; a first magnetoresistive element; a first layer sandwiched between the substrate and the first magnetoresistive element; a second layer located farther from the substrate than the first magnetoresistive element in a stacking direction; the first magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; A magnetoresistive device, wherein the first layer or the second layer comprises an insulating first magnetic layer.

19. A magnetic memory comprising the magnetoresistive device according to any one of claims 1 to 18.