Detection device

Abstract

Provided is a detection device capable of suppressing wiring crack by relaxing stress concentration of wiring in a step part. This detection device is provided with: an active region in which an active layer of a photodiode is present; a connection region in which a connection portion provided at an end portion of the first substrate is disposed; a peripheral region between the active region and the connection region; a sealing film that seals the active region and the peripheral region; and a first wire connecting a lower electrode and the connection portion. The peripheral region includes: a first portion having a first insulating layer, a sealing film, a second insulating layer, and a second substrate on the first substrate; and a second portion opposite the first portion and having at least one of the sealing film, the second insulating layer, and the second substrate. A boundary line provided between the first portion and the second portion along the longitudinal direction of the second substrate, which has a band-like shape, intersects the first wire, the longitudinal direction intersecting a direction from the connection region toward the active region.

Description

Detection Device

[0001] The present invention relates to a detection device.

[0002] Optical sensors capable of detecting fingerprint patterns and vein patterns are known (see, for example, Patent Document 1). Among these optical sensors, a sensor having multiple photodiodes with an active layer made of an organic semiconductor material is known. The organic semiconductor material is disposed between a lower electrode and an upper electrode, and a signal line is electrically connected to the lower electrode of the photodiode for outputting a detection signal to a detection circuit.

[0003] Japanese Patent Application Laid-Open No. 2009-32005

[0004] When the ring-shaped housing is bent vertically, the area of ​​the protective layer on the sensor substrate is smaller than that of the sensor substrate below, so stress concentrates at the step between the sensor substrate and the protective layer, which can cause wiring cracks.

[0005] An object of the present invention is to provide a detection device that can reduce stress concentration on wiring at step portions and suppress wiring cracks.

[0006] A detection device according to one aspect of the present invention includes a photodiode having a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode; a first substrate; a first insulating layer between the first substrate and the photodiode; a second substrate that covers at least the photodiode and has an area smaller than that of the first substrate so as to have the photodiode between the first substrate and the first insulating layer; an active region in which the active layer of the photodiode is located; a connection region in which a connection portion provided at an end of the first substrate is disposed; The semiconductor device comprises a peripheral region between the connection region, a sealing film that seals the active region and the peripheral region, the lower electrode, and a first wiring that connects the connection portion, wherein the peripheral region has a first portion having the first insulating layer, the sealing film, the second insulating layer, and the second substrate on the first substrate, and a second portion having at least one of the sealing film, the second insulating layer, or the second substrate relative to the first portion, and the first wiring intersects with a boundary line provided between the first portion and the second portion along the longitudinal direction of the rectangular second substrate, which intersects with the direction from the connection region toward the active region.

[0007] A detection device according to another aspect of the present invention includes a photodiode having a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode, a first substrate, a first insulating layer between the first substrate and the photodiode, a second substrate that covers at least the photodiode and has an area smaller than that of the first substrate so as to have the photodiode between the first substrate and the first insulating layer, an active region where the active layer of the photodiode is located, a connection region where a connection portion provided at an end of the first substrate is located, a peripheral region between the active region and the connection region, and an encapsulant that encapsulates the active region and the peripheral region. the first wiring intersects with a boundary line between the first and second portions along the first direction, and when the first and second substrates are viewed in a second direction perpendicular to the first direction, the first and second substrates are bendable so as to protrude in a third direction perpendicular to the first and second directions.

[0008] FIG. 1 is a schematic diagram illustrating an example of the appearance of the detection device according to the first embodiment, when a finger is placed inside the detection device, as viewed from the side of the housing. FIG. 2 is a schematic cross-sectional view taken along the line II-II' in FIG. 1. FIG. 3 is a developed view illustrating an example of the optical sensor of the detection device illustrated in FIG. 1. FIG. 4 is a diagram illustrating an example of the configuration of the first optical sensor and the second optical sensor illustrated in FIG. 3. FIG. 5 is a schematic cross-sectional view illustrating an example of the stacked configuration of the optical sensor taken along the line V-V' in FIG. 4. FIG. 6 is a schematic cross-sectional view illustrating an example of the stacked configuration of the optical sensor taken along the line VI-VI' in FIG. 4. FIG. 7 is a schematic cross-sectional view illustrating an example of the stacked configuration of the optical sensor taken along the line VII-VII' in FIG. 4. FIG. 8 is a schematic cross-sectional view illustrating an example of the stacked configuration of the optical sensor taken along the line VIII-VIII' in FIG. 4. FIG. 9 is a diagram illustrating an example of the configuration of the first optical sensor and the second optical sensor according to a comparative example. FIG. 10 is a schematic cross-sectional view illustrating an example of the stacked configuration of the optical sensor illustrated in FIG. 9. FIG. 11 is a cross-sectional schematic diagram showing a configuration of the optical sensor shown in FIG. 9 when bent in a third direction. FIG. 12 is a configuration diagram showing an example of the configuration of a first optical sensor and a second optical sensor according to embodiment 2. FIG. 13 is a configuration diagram showing an example of the configuration of a first optical sensor and a second optical sensor according to a first modified example of embodiment 2. FIG. 14 is a cross-sectional schematic diagram showing an example of the stacked configuration of the optical sensor taken along cross section XIII-XIII′ shown in FIG. 13. FIG. 15 is a cross-sectional schematic diagram showing an example of the stacked configuration of the optical sensor taken along cross section XIV-XIV′ shown in FIG. 13. FIG. 16 is a cross-sectional schematic diagram showing an example of the stacked configuration of the optical sensor according to embodiment 3.

[0009] Modes for carrying out the invention (embodiments) will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially identical. Furthermore, the components described below can be combined as appropriate. The disclosure is merely an example, and appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the invention are naturally included within the scope of the present invention. Furthermore, for clarity of explanation, the drawings may show the width, thickness, shape, etc. of each part schematically compared to the actual embodiment. However, these are merely examples and are not intended to limit the interpretation of the present invention. Furthermore, in this specification and each figure, elements similar to those described above with reference to the previous figures may be designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0010] In this specification and claims, when expressing an aspect of placing another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is placed directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is placed above a certain structure via yet another structure.

[0011] (Embodiment 1) Fig. 1 is a schematic diagram showing an example of the appearance of a detection device according to embodiment 1 when a finger is placed inside the detection device as viewed from the side of the housing. Fig. 2 is a schematic cross-sectional view taken along the line II-II' in Fig. 1. Fig. 3 is a developed view showing an example of the optical sensors of the detection device shown in Fig. 1. Fig. 4 is a configuration diagram showing an example of the configuration of the first optical sensor and the second optical sensor shown in Fig. 3. Fig. 5 is a schematic cross-sectional view showing an example of the stacked configuration of the optical sensors taken along the line V-V' in Fig. 4. Fig. 6 is a schematic cross-sectional view showing an example of the stacked configuration of the optical sensors taken along the line VI-VI' in Fig. 4.

[0012] The detection device 1 shown in FIG. 1 is a ring-shaped device that can be attached to and detached from the human body, and is worn on a finger Fg of the human body. The finger Fg includes the thumb, index finger, middle finger, ring finger, little finger, etc. The human body is an individual to be authenticated, whose identity is verified by the detection device 1. The detection device 1 can detect biometric information about a living body from the finger Fg on which it is worn. The finger Fg is an example of a measurement target. The measurement target is a living body or part of a living body, and is a measurement target. The detection device 1 is made into a ring or wristband, making it easy for the user to carry. In the following description, it is assumed that the detection device 1 is used as a ring.

[0013] 2, the detection device 1 includes a housing 200, a light source 60, a first optical sensor 10A, and a second optical sensor 10B. The detection device 1 includes a battery (not shown) inside the housing 200 and is operated by power from the battery.

[0014] The housing 200 is formed in a ring shape (annular shape) that can be worn on a finger Fg and is a wearable member that is worn on a living body. In the example shown in FIG. 2 , the housing 200 includes a sealing film 210 and an exterior part 220. The sealing film 210 and the exterior part 220 are integrally formed into a ring shape. The sealing film 210 houses the light source 60, the first optical sensor 10A, the second optical sensor 10B, etc. inside. The sealing film 210 is formed in a ring shape using a housing material such as a transparent synthetic resin or silicone. The exterior part 220 has a surface of the housing 200 that covers the outer peripheral surface 210A of the sealing film 210. The exterior part 220 is formed in a ring shape using a material such as a metal or a non-transparent synthetic resin. The housing 200 houses a flexible printed circuit board 70, on which the light source 60, the first optical sensor 10A, the second optical sensor 10B, etc. are mounted, inside the sealing film 210. The flexible printed circuit board 70 is housed inside the housing 200 by, for example, forming the housing 200 in a ring shape in a mold and filling a filling material around the flexible printed circuit board 70 .

[0015] As shown in FIG. 3 , the flexible printed circuit board 70 is formed in a deformable band shape, and is formed into a ring shape by bringing one end 71 and the other end 72 closer together. The flexible printed circuit board 70 has a first mounting area 73 and a second mounting area 74. The first mounting area 73 is an area where the light source 60 and the like are mounted. The second mounting area 74 is an area where the control circuit 122, the power supply circuit 123, and the like are mounted. The first mounting area 73 of the flexible printed circuit board 70 has one end 71 divided into two. One end 71 is electrically connected to the first substrate 21, and the light source 60 is mounted on the other end 71. As a result, the flexible printed circuit board 70 electrically connects the light source 60, the first optical sensor 10A, the second optical sensor 10B, and the like to the control circuit 122. In addition, a second substrate 50 is provided on the first substrate 21.

[0016] In this embodiment, the first optical sensor 10A and the second optical sensor 10B are provided so as to sandwich the light source 60 in the circumferential direction 200C. That is, the detection device 1 is arranged in the circumferential direction 200C with the first optical sensor 10A, the light source 60, and the second optical sensor 10B lined up in this order. By arranging the first optical sensor 10A and the second optical sensor 10B so as to sandwich the light source 60 in the circumferential direction 200C, the first optical sensor 10A and the second optical sensor 10B can detect light emitted by the light source 60 over a wide range of the housing 200.

[0017] The first substrate 21 is an insulating substrate formed in a strip shape using, for example, a film-like synthetic resin such as PET (Poly Ethylene Terephthalate). The first substrate 21 is deformable and has the first optical sensor 10A and the second optical sensor 10B mounted thereon. The first substrate 21 can be bent in the third direction Dz. The first substrate 21 is attached to the flexible printed circuit board 70, thereby positioning the first optical sensor 10A and the second optical sensor 10B on both sides of the light source 60 in the circumferential direction 200C of the housing 200. The first substrate 21 has a first region 21A where the first optical sensor 10A is mounted and a second region 21B where the second optical sensor 10B is mounted. The first substrate 21 is formed as a single substrate having the first region 21A and the second region 21B.

[0018] The second substrate 50 is an insulating substrate similar to the first substrate 21, and is formed in a strip shape from, for example, PET (Poly Ethylene Terephthalate), which is a film-like synthetic resin. The second substrate 50 covers the sealing film 210 and is a deformable substrate. The second substrate 50 can be curved in the third direction Dz.

[0019] 2 , the flexible printed circuit board 70 is housed inside the housing 200 so that the surface on which the first optical sensor 10A, the second optical sensor 10B, and the light source 60 are mounted faces the inner circumferential surface 200B of the housing 200. If the flexible printed circuit board 70 is translucent, the first optical sensor 10A, the second optical sensor 10B, and the light source 60 may be mounted on the back surface opposite to the front surface. In this case, the light source 60 may be disposed so that it emits light toward the flexible printed circuit board 70 and the light that has passed through the flexible printed circuit board 70 is emitted toward the outside of the housing 200.

[0020] As shown in FIG. 2 , the light source 60 is provided inside the sealing film 210 of the housing 200 and is configured to be able to irradiate light toward a detection object such as a finger Fg worn on the ring-shaped housing 200. For example, an inorganic LED (Light Emitting Diode) or an organic EL (Organic Light Emitting Diode) is used as the light source 60. The light source 60 irradiates light of a predetermined wavelength. In this embodiment, the light source 60 has a plurality of light sources capable of irradiating near-infrared light, red light, and green light.

[0021] Light emitted from the light source 60 is reflected by the surface of the object to be detected, such as a finger Fg, and enters the first optical sensor 10A and the second optical sensor 10B. This allows the detection device 1 to detect a fingerprint by detecting the shape of the projections and recesses on the surface of the finger Fg. Alternatively, the light emitted from the light source 60 may be reflected inside the finger Fg or pass through the finger Fg before entering the first optical sensor 10A and the second optical sensor 10B. This allows the detection device 1 to detect information about a living body inside the finger Fg. Examples of information about a living body include pulse waves, pulse rates, and blood vessel images of the finger or palm. That is, the detection device 1 may be configured as a fingerprint detection device that detects fingerprints, or a vein detection device that detects vascular patterns such as veins.

[0022] Each of the first optical sensor 10A and the second optical sensor 10B detects light emitted by the light source 60 and reflected by a finger Fg or the like, directly incident light, etc. The first optical sensor 10A and the second optical sensor 10B are organic photodiodes (OPDs). The first optical sensor 10A is provided on the housing 200 so as to be adjacent to one end 61 of the light source 60 in the circumferential direction 200C of the housing 200. The second optical sensor 10B is provided on the housing 200 so as to be adjacent to the other end 62 of the light source 60 in the circumferential direction 200C of the housing 200.

[0023] As shown in Fig. 3, the first optical sensor 10A and the second optical sensor 10B each have a photodiode PD (see Fig. 4), which is an organic photodiode. Each of the first optical sensor 10A and the second optical sensor 10B has two lower electrodes 11 aligned along the circumferential direction 200C. The first optical sensor 10A and the second optical sensor 10B are mounted on a single first substrate 21 and electrically connected to the flexible printed circuit board 70 via the first substrate 21. The first substrate 21 has a cutout portion 22 (see Fig. 4) between the first optical sensor 10A and the second optical sensor 10B in the circumferential direction 200C of the housing 200.

[0024] In the following description, the first direction Dx is a direction in a plane parallel to the first substrate 21 and is the same direction as the circumferential direction 200C. The second direction Dy is a direction in a plane parallel to the first substrate 21 and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect with the first direction Dx without being perpendicular thereto. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy. The third direction Dz is the normal direction of the first substrate 21. Furthermore, "planar view" refers to the positional relationship when viewed from a direction perpendicular to the first substrate 21.

[0025] As shown in FIG. 4 , the first optical sensor 10A has a stacked configuration of two lower electrodes 11 aligned in the first direction Dx and one upper electrode 15A. The second optical sensor 10B has a stacked configuration of two lower electrodes 11 aligned in the first direction Dx and one upper electrode 15B. The upper electrode 15 includes the upper electrode 15A of the first optical sensor 10A and the upper electrode 15B of the second optical sensor 10B. Each of the upper electrode 15A and the upper electrode 15B covers the two lower electrodes 11 in a plan view. The upper electrode 15A and the upper electrode 15B are electrically connected by an electrode connector 151. The upper electrode 15A, the upper electrode 15B, and the electrode connector 151 are integrally formed.

[0026] The first substrate 21 has a power electrode 211 extending along the first direction Dx. The power electrode 211 is electrically connected to a connection portion 212 (terminal portion) of the first substrate 21 via a conductive material 213, and a sensor power signal is supplied from the power supply circuit 123 (see FIG. 3 ) via the connection portion 212. The connection portion 212 has multiple connection terminals arranged side by side in the first direction Dx. The upper electrode 15 is electrically connected to the power electrode 211 via the conductive material 213. The conductive material 213 is provided on the first substrate 21 so as to straddle the upper electrode 15 and the power electrode 211, and is made of a conductive material. As a result, the upper electrode 15 is supplied with a sensor power signal from the power supply circuit 123 via the power electrode 211.

[0027] The plurality of first wirings 26 of the first substrate 21 are connected to a detection circuit 48 included in the control circuit 122 via a plurality of signal lines SL of the flexible printed circuit board 70. The detection circuit 48 is electrically connected to the lower electrodes 11 of the first optical sensor 10A and the second optical sensor 10B via the plurality of signal lines SL. The detection circuit 48 may be formed as a circuit separate from the control circuit 122.

[0028] The first wiring 26 is formed, for example, of a metal wiring, and is formed of a material having better conductivity than the lower electrode 11 of the photodiode PD. The first wiring 26 is formed, for example, of a light-transmitting conductive material such as ITO (Indium Tin Oxide). The first wiring 26 is provided in a layer between the first substrate 21 and the photodiode PD in the third direction Dz. The first wiring 26 is electrically connected to the lower electrode 11 and the connection portion 212 on the first substrate 21. Note that the first wiring 26 may be formed, for example, in the same layer as the lower electrode 11, or may be formed of metal.

[0029] The second wiring 260 is electrically connected to the power electrode 211 and the connection portion 212 by a conductive material 213 .

[0030] The second wiring 260 is formed of, for example, a metal wiring and is formed of a material having conductivity. The second wiring 260 is formed of a material having better conductivity than the upper electrode 15. The second wiring 260 is provided in a layer between the first substrate 21 and the photodiode PD in the third direction Dz. The second wiring 260 is electrically connected to the upper electrode 15 and the connection portion 212. Note that the second wiring 260 may be formed in the same layer as the upper electrode 15, or may be formed of metal, for example. The second wiring 260 may also be a shield layer.

[0031] The control circuit 122 is a circuit that supplies control signals to the multiple photodiodes PD to control the detection operation. The multiple photodiodes PD each output an electrical signal corresponding to light irradiated thereon as a detection signal Vdet to the detection circuit 48. The second wiring 260 is connected to the control circuit 122 via a wiring 261 that supplies a power supply voltage to the second wiring 260. In this embodiment, the detection signals Vdet of the multiple photodiodes PD are output to the detection circuit 48 sequentially in a time-division manner. In other words, the multiple signal lines SL are electrically connected to the detection circuit 48 sequentially in a time-division manner. As a result, the detection device 1 detects information about the object to be detected based on the detection signals Vdet from the multiple photodiodes PD.

[0032] The first substrate 21 has a first side surface 21a, a second side surface 21b, a third side surface 21c, a fourth side surface 21d, a fifth side surface 21e, a sixth side surface 21f, and a seventh side surface 21g.

[0033] The second substrate 50 has a first side surface 50a, a second side surface 50b, a third side surface 50c, a fourth side surface 50d, a fifth side surface 50e, a sixth side surface 50f, a seventh side surface 50g, and an eighth side surface 50h.

[0034] The second side surface 21b and the second side surface 50b are parallel planes of equal length and overlap. The third side surface 21c and the third side surface 50c are parallel planes of equal length and overlap. The fourth side surface 21d and the fourth side surface 50d are parallel planes of equal length and overlap. The fifth side surface 21e and the fifth side surface 50e are parallel planes of equal length and overlap. The sixth side surface 21f and the sixth side surface 50f are parallel planes of equal length and overlap.

[0035] The first side surface 50a and the first side surface 21a are parallel to each other, but the first side surface 50a is shorter in length than the first side surface 21a. The seventh side surface 50g and the seventh side surface 21g are parallel to each other, but the seventh side surface 50g is shorter in length than the seventh side surface 21g. Furthermore, the first substrate 21 does not have a side surface in the portion that overlaps with the eighth side surface 50h. As a result, the second substrate 50, which covers the photodiode PD and has an area smaller than that of the first substrate 21, is provided on the first substrate 21.

[0036] 5 , the first optical sensor 10A has a first substrate 21 (first region 21A), a photodiode PD, and a second substrate 50 facing the first substrate 21. In this embodiment, the first optical sensor 10A further has a first insulating layer 27 and a second insulating layer 270.

[0037] The first insulating layer 27 is provided on the first substrate 21. The first insulating layer 27 is disposed between the first substrate 21 and the photodiode PD. The second insulating layer 270 is provided on the photodiode PD. The second insulating layer 270 is disposed between the second substrate 50 and the photodiode PD. The first insulating layer 27 and the second insulating layer 270 may be inorganic insulating films or organic insulating films.

[0038] The photodiode PD is provided on the first insulating layer 27. The photodiode PD has a lower electrode 11, a lower buffer layer 12, an active layer 13, an upper buffer layer 14, and an upper electrode 15 (15A). In the photodiode PD, the lower electrode 11, the lower buffer layer 12 (hole transport layer), the active layer 13, the upper buffer layer 14 (electron transport layer), and the upper electrode 15 are stacked in this order in a third direction Dz perpendicular to the first substrate 21.

[0039] The lower electrode 11 is an anode electrode of the photodiode PD and is formed of a light-transmitting conductive material such as indium tin oxide (ITO). The characteristics (e.g., voltage-current characteristics and resistance value) of the active layer 13 change depending on the light irradiated thereon. An organic material is used as the material for the active layer 13. Specifically, the active layer 13 has a bulk heterostructure in which a p-type organic semiconductor and an n-type fullerene derivative (PCBM), which is an n-type organic semiconductor, are mixed. The active layer 13 may be made of, for example, a low molecular weight organic material such as C60 (fullerene), PCBM (phenyl C61-butyric acid methyl ester), CuPc (copper phthalocyanine), F16CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), or PDI (a perylene derivative).

[0040] The active layer 13 can be formed using these low-molecular-weight organic materials by a vapor deposition (dry process). In this case, the active layer 13 may be, for example, a laminated film of CuPc and F16CuPc, or a laminated film of rubrene and C60. The active layer 13 can also be formed by a coating (wet process). In this case, the active layer 13 is made of a material that combines the above-mentioned low-molecular-weight organic material with a high-molecular-weight organic material. Examples of high-molecular-weight organic materials that can be used include P3HT (poly(3-hexylthiophene)) and F8BT (F8-alt-benzothiadiazole). The active layer 13 can be a film in which P3HT and PCBM are mixed, or a film in which F8BT and PDI are mixed.

[0041] The lower buffer layer 12 is a hole transport layer. The upper buffer layer 14 is an electron transport layer. The lower buffer layer 12 and the upper buffer layer 14 are provided to facilitate the holes and electrons generated in the active layer 13 reaching the lower electrode 11 or the upper electrode 15. The lower buffer layer 12 (hole transport layer) is directly in contact with the lower electrode 11 and is also provided in the region between adjacent lower electrodes 11. The active layer 13 is directly in contact with the lower buffer layer 12. The material of the hole transport layer is a metal oxide layer. Tungsten oxide (WO3), molybdenum oxide, etc. are used as the metal oxide layer.

[0042] The upper buffer layer 14 (electron transport layer) is in direct contact with the active layer 13, and the upper electrode 15 is in direct contact with the upper buffer layer 14. Ethoxylated polyethyleneimine (PEIE) is used as the material for the electron transport layer.

[0043] The materials and manufacturing methods of the lower buffer layer 12, the active layer 13, and the upper buffer layer 14 are merely examples, and other materials and manufacturing methods may be used. For example, the lower buffer layer 12 and the upper buffer layer 14 are not limited to single-layer films, and may be formed as multilayer films including an electron blocking layer and a hole blocking layer.

[0044] The upper electrode 15 is provided on the upper buffer layer 14. The upper electrode 15 is a cathode electrode of the photodiode PD and is formed continuously over the entire first optical sensor 10A and the second optical sensor 10B. In other words, the upper electrode 15 is provided continuously over the multiple photodiodes PD. The upper electrode 15 faces the multiple lower electrodes 11, sandwiching the lower buffer layer 12, the active layer 13, and the upper buffer layer 14 therebetween. The upper electrode 15 is formed of a light-transmitting conductive material such as ITO or IZO. A portion of the end of the upper surface 150 of the upper electrode 15 is electrically connected to the conductive material 213. In the first optical sensor 10A, the photodiode PD is well sealed by the sealing film 210 provided on the upper electrode 15 and the like.

[0045] 6 , the second optical sensor 10B has a lower electrode 11 of the second optical sensor 10B in a second region 21B of the first substrate 21, which is different from the lower electrode 11 of the first optical sensor 10A. The lower electrode 11 is covered with a lower buffer layer 12, an active layer 13, an upper buffer layer 14, and an upper electrode 15 (15B). In this embodiment, the second optical sensor 10B has a first substrate 21 (second region 21B), a photodiode PD, a first insulating layer 27, a second substrate 50 facing the first substrate 21, and a second insulating layer 270. The second substrate 50, the photodiode PD, the first insulating layer 27, and the second insulating layer 270 have the same configuration as the photodiode PD and first insulating layer 27 of the first optical sensor 10A described above. That is, the photodiode PD of the second optical sensor 10B has a lower electrode 11, a lower buffer layer 12, an active layer 13, an upper buffer layer 14, and an upper electrode 15 (15B). In this embodiment, the first optical sensor 10A and the second optical sensor 10B are organic photodiodes.

[0046] 4, the first substrate 21 has the first region 21A of the first optical sensor 10A and the second region 21B of the second optical sensor 10B, and is formed integrally as a single common substrate. The first substrate 21 has a cutout portion 22 formed between the first region 21A of the first optical sensor 10A and the second region 21B of the second optical sensor 10B in the first direction Dx. The first substrate 21 has the cutout portion 22 between the first optical sensor 10A and the second optical sensor 10B, and a connecting portion 23 that contacts the cutout portion 22 and is located between the first optical sensor 10A and the second optical sensor 10B.

[0047] The cutout portion 22 is formed in the first direction Dx by a distance L1 that is longer than the length of the light source 60. The cutout portion 22 is formed in the second direction Dy by a distance L2 that is longer than the length of the light source 60 but shorter than the length (width) of the first substrate 21. The cutout portion 22 is formed so that the distance between a center 22C of the cutout portion 22 and one side of the lower electrode 11 of the first optical sensor 10A is equal to the distance between a center 22C of the cutout portion 22 and one side of the lower electrode 11 of the second optical sensor 10B. The first substrate 21 integrally forms the first optical sensor 10A and the second optical sensor 10B by connecting portions 23 of the cutout portion 22. The lower buffer layer 12, the active layer 13, the upper buffer layer 14, and the electrode connecting portion 151 of the upper electrode 15 are arranged in the connecting portion 23. As a result, the connecting portion 23 integrally forms the upper electrodes 15 of the first optical sensor 10A and the second optical sensor 10B. The cutout portion 22 is formed in a shape that allows the light source 60 to be placed therein. In this embodiment, the cutout portion 22 is formed in a substantially rectangular shape in a plan view, but may be formed in a semicircular, triangular, polygonal, or other shape, for example. The electrode connecting portion 151 is provided on the connecting portion 23 of the first substrate 21 so as to be stacked on the upper buffer layer 14, the active layer 13, and the lower buffer layer 12.

[0048] Here, the region where the active layer 13 of the photodiode PD (see FIG. 5) is arranged is referred to as an active region AA. The region closer to the connection portion 212 than the eighth side surface 50h is referred to as a connection region AB. The region between the active region AA and the connection region AB is referred to as a peripheral region AC. One end 71 of the flexible printed circuit board 70 (see FIG. 3) including the signal line SL is electrically connected to the connection region AB using an anisotropic conductive resin or the like.

[0049] The peripheral area AC has a first portion 40 having a first insulating layer 27, a sealing film 210, a second insulating layer 270, and a second substrate 50 on the first substrate 21, and a second portion 41 in which at least one of the sealing film 210, the second insulating layer 270, and the second substrate 50 is cut out from the first portion 40. The sealing film 210 seals the active area AA and the peripheral area AC.

[0050] The eighth side surface 50h has a boundary line 42 between the first portion 40 and the second portion 41, which is along the longitudinal direction of the second substrate. The boundary line 42 is parallel to the first direction Dx, and the directions in which the first wiring 26 and the second wiring 260 extend at the portions intersecting the boundary line 42 are perpendicular to the first direction Dx.

[0051] Furthermore, a step corresponding to the thickness of the second substrate 50 is formed in the eighth side surface 50h in the second direction Dy, and the first wiring 26 and the second wiring 260 intersect with each other, but the first wiring 26 and the second wiring 260 intersect along the second direction Dy. Therefore, when the detection device 1 is bent in the third direction, stress generated in the step portion is less likely to be applied to the first wiring 26 and the second wiring 260.

[0052] In the detection device 1 according to the first embodiment, the first wiring 26 and the second wiring 260 intersect with the eighth side surface 50h, where a step corresponding to the thickness of the first substrate 21 occurs, but when the detection device 1 is bent in the third direction, stress is less likely to be applied to the first wiring 26 and the second wiring 260 at the eighth side surface 50h. As a result, cracks in the first wiring 26 and the second wiring 260 that intersect with the eighth side surface 50h are suppressed.

[0053] Fig. 7 is a cross-sectional view showing an example of a laminated structure of the optical sensor along the line VII-VII' shown in Fig. 4. Fig. 8 is a cross-sectional view showing an example of a laminated structure of the optical sensor along the line VIII-VIII' shown in Fig. 4.

[0054] 7 , the first portion 40 is formed by laminating a second substrate 50, a first insulating layer 27, a sealing film 210, the first insulating layer 27, and a first substrate 21 in this order. A first wiring 26 and a second wiring 260 are provided on the upper surface of the first substrate 21. A lower electrode 11 is disposed on the upper surface of the first insulating layer 27.

[0055] 8, the second portion 41 has a first substrate 21, a first insulating layer 27, a first wiring 26, and a second wiring 260. The first wiring 26 and the second wiring 260 are provided on the upper surface of the first insulating layer 27.

[0056] The above describes an example of the configuration of the detection device 1 according to this embodiment. Note that the configuration described above using Figures 1 to 8 is merely an example, and the configuration of the detection device 1 according to this embodiment is not limited to this example. The configuration of the detection device 1 according to this embodiment can be flexibly modified depending on the specifications and operation.

[0057] Fig. 9 is a configuration diagram showing an example configuration of a first optical sensor and a second optical sensor according to a comparative example. Fig. 10 is a cross-sectional schematic diagram showing an example stacked configuration of the optical sensor shown in Fig. 9. Fig. 11 is a cross-sectional schematic diagram showing a configuration when the optical sensor shown in Fig. 9 is bent in a third direction.

[0058] As shown in FIG. 9, the first substrate 21 has a first side surface 21a, a second side surface 21b, a third side surface 21c, a fourth side surface 21d, a fifth side surface 21e, a sixth side surface 21f, and an eighth side surface 21h.

[0059] As shown in FIG. 9, the second substrate 50 has a first side surface 50a, a second side surface 50b, a third side surface 50c, a fourth side surface 50d, a fifth side surface 50e, a sixth side surface 50f, a seventh side surface 50g, and an eighth side surface 50h.

[0060] In the detection device 1A according to the comparative example, the first side surface 21a and the first side surface 50a are parallel planes of equal length and overlap. The second side surface 21b and the second side surface 50b are parallel planes of equal length and overlap. The third side surface 21c and the third side surface 50c are parallel planes of equal length and overlap. The fourth side surface 21d and the fourth side surface 50d are parallel planes of equal length and overlap. The fifth side surface 21e and the fifth side surface 50e are parallel planes of equal length and overlap.

[0061] The sixth side surface 50f and the sixth side surface 21f are parallel to each other, but the sixth side surface 50f is shorter in length than the sixth side surface 21f. The eighth side surface 50h and the eighth side surface 21h are parallel to each other, but the eighth side surface 50h is shorter in length than the eighth side surface 21h. Furthermore, the first substrate 21 does not have a side surface in the portion that overlaps with the seventh side surface 50g. As a result, the second substrate 50, which covers the photodiode PD and has an area smaller than that of the first substrate 21, is provided on the first substrate 21.

[0062] 9, the seventh side surface 50g also has a boundary line 43 between the first portion 40 and the second portion 41. The first wiring 26 intersects with the boundary line 43.

[0063] As shown in Figure 10, since the area of ​​the upper second substrate 50 is smaller than the area of ​​the lower first substrate 21, a step AX equivalent to the thickness of the second substrate 50 is created on the flexible printed circuit board 70 side in the third direction of the seventh side surface 50g.

[0064] 11 , when the detection device 1A is bent in the third direction, the end of the first substrate 21 facing the flexible printed circuit board 70 bends in the direction of the applied force. The thicknesses of the area consisting of only the first substrate 21 and the area where the second substrate 50 overlaps the first substrate 21 are different, resulting in a difference in the amount of bending even when the same bending force is applied. Due to this difference in the amount of bending, the end of the second substrate 50 facing the flexible printed circuit board 70 is pressed against the surface of the first substrate 21, causing stress F to concentrate at the step AX. As a result, cracks may occur in the first wiring 26 that intersects with the step AX.

[0065] In contrast, in the detection device 1 according to the first embodiment, the first wiring 26 and the second wiring 260 intersect with the eighth side surface 50h (see FIG. 4) where a step corresponding to the thickness of the first substrate 21 occurs, but when the detection device 1 is bent in the third direction, stress is less likely to be applied to the first wiring 26 and the second wiring 260 on the eighth side surface 50h. As a result, cracks in the first wiring 26 and the second wiring 260 that intersect with the eighth side surface 50h are suppressed.

[0066] Furthermore, since the second substrate 50, the second insulating layer 270, and the sealing film 210 are not provided in the second portion 41, the first wiring 26 and the second wiring 260 are exposed, and when the detection device 1 is bent in the third direction, the stress on the second portion 41 is alleviated, making it less likely that stress will be applied to the first wiring 26 and the second wiring 260.

[0067] 12 is a diagram showing an example of the configuration of a first optical sensor and a second optical sensor according to a second embodiment. In the following description, the same components as those described in the above-described embodiments are denoted by the same reference numerals, and redundant description will be omitted. The description of the first portion 40 will be omitted because it is the same as that in the first embodiment.

[0068] The second substrate 50 has a first side 50a, a second side 50b, a third side 50c, a fourth side 50d, a fifth side 50e, a sixth side 50f, a seventh side 50g, a ninth side 50i, a tenth side 50j, an eleventh side 50k, a twelfth side 50n and a thirteenth side 50m.

[0069] In the detection device 1B according to the second embodiment, the first side surface 21a and the first side surface 50a are parallel planes of equal length and overlap each other. The second side surface 21b and the second side surface 50b are parallel planes of equal length and overlap each other. The third side surface 21c and the third side surface 50c are parallel planes of equal length and overlap each other. The fourth side surface 21d and the fourth side surface 50d are parallel planes of equal length and overlap each other. The fifth side surface 21e and the fifth side surface 50e are parallel planes of equal length and overlap each other.

[0070] The first side surface 50a and the first side surface 21a are parallel to each other, but the first side surface 50a has a shorter length than the first side surface 21a. The seventh side surface 50g and the seventh side surface 21g are parallel to each other, but the seventh side surface 50g has a shorter length than the seventh side surface 21g. Furthermore, the first substrate 21 does not have any side surfaces in the portions that overlap with the ninth side surface 50i, the tenth side surface 50j, the eleventh side surface 50k, the twelfth side surface 50n, and the thirteenth side surface 50m. As a result, the second substrate 50, which covers the photodiode PD and has an area smaller than that of the first substrate 21, is provided on the first substrate 21.

[0071] As shown in Fig. 12, in the second portion 41, the second substrate 50 is not covered on the first substrate 21. Similar to the second portion 41 according to the first embodiment shown in Fig. 8, the second portion 41 has the first substrate 21, the first insulating layer 27, the first wiring 26, and the second wiring 260. The first wiring 26 and the second wiring 260 are provided on the upper surface of the first insulating layer 27. In the second portion 41 according to the second embodiment, the sealing film 210, the second insulating layer 270, and the second substrate 50 are cut out.

[0072] As a result, since the second substrate 50, the second insulating layer 270, and the sealing film 210 are not provided in the second part 41, the first wiring 26 is exposed, and when the detection device 1B is bent in the third direction, the stress on the second part 41 is alleviated, making it less likely that stress will be applied to the first wiring 26.

[0073] The boundary line 42 is parallel to the first direction Dx, and the directions in which the first wiring 26 and the second wiring 260 extend at the portions intersecting the boundary line 42 are perpendicular to the first direction Dx. The boundary line 42 is provided on the eleventh side surface 50k.

[0074] As a result, a step corresponding to the thickness of the second substrate 50 is formed in the tenth side surface 50j and the twelfth side surface 50n in the third direction, but the first wiring 26 and the second wiring 260 do not intersect with each other. Therefore, when the detection device 1B is bent in the third direction, stress generated in the step portion is less likely to be applied to the first wiring 26 and the second wiring 260.

[0075] (First Modification of Embodiment 2) Fig. 13 is a configuration diagram showing an example configuration of a first optical sensor and a second optical sensor according to a first modification of embodiment 2. Fig. 14 is a cross-sectional schematic diagram showing an example stack configuration of an optical sensor taken along the line XIV-XIV' shown in Fig. 13. In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals, and redundant description will be omitted. The description of the first portion 40 will be omitted as it is the same as in embodiment 1.

[0076] 13 , in a detection device 1C according to a first modification of the second embodiment, the second portion 41 is formed such that the second substrate 50 covers the first substrate 21. The first wiring 26 and the second wiring 260 intersect with an eighth side surface 50h, which is the boundary between the portion where the second substrate 50 is present and the portion where the second substrate 50 is not present.

[0077] 14 , the second portion 41 has a first substrate 21, a first insulating layer 27, a first wiring 26, a second wiring 260, a second insulating layer 270, and a second substrate 50. The first wiring 26 and the second wiring 260 are provided on the upper surface of the first insulating layer 27. In the second portion 41, the sealing film 210 is cut out. A gap SP1 is provided between the first insulating layer 27 and the second insulating layer 270. For example, an air layer is disposed in the gap SP1.

[0078] As a result, since the sealing film 210 is not provided on the second portion 41, stress acting on the boundary line 42 along the first direction Dx of the second portion 41 is alleviated, and stress is less likely to be applied to the first wiring 26 and the second wiring 260 that intersect with the boundary line 42. At the intersection between the first wiring 26 and the second wiring 260 and the eighth side surface 50h, the second portion 41 overlaps the eighth side surface 50h and there is no sealing film 210, so even if the first wiring 26 and the second wiring 260 intersect with the eighth side surface 50h, stress acting from the second substrate 50 to the first wiring 26 and the second wiring 260 is alleviated.

[0079] (Second Modification of Embodiment 2) Figure 15 is a cross-sectional schematic diagram showing an example of the stacked structure of an optical sensor taken along the line XV-XV' shown in Figure 13. In the following description, the same components as those described in the above-mentioned embodiment are denoted by the same reference numerals, and redundant description will be omitted. Note that the description of the first portion 40 will be omitted because it is the same as in embodiment 1.

[0080] As shown in Figure 14, the second part 41 of the detection device 1D according to the second variant of embodiment 2 is configured such that a second substrate 50 is covered on top of the first substrate 21, similar to embodiment 2.

[0081] Also, as shown in Figure 12, the first wiring 26 and the second wiring 260 intersect with the eighth side surface 50h, which is the boundary between the part where the second substrate 50 is present and the part where the second substrate 50 is not present, as in embodiment 2.

[0082] 14 , the second portion 41 includes the first substrate 21, a first insulating layer 27, a first wiring 26, a second wiring 260, a sealing film 210, and a second substrate 50. The first wiring 26 and the second wiring are provided on the upper surface of the first insulating layer 27. In the second portion 41, the second insulating layer 270 is cut out. A gap SP2 is provided between the sealing film 210 and the second substrate 50. For example, an air layer is disposed in the gap SP2.

[0083] As a result, because the second substrate 50 and the sealing film 210 are separated into the second portions 41, stress acting on the boundary line 42 along the first direction Dx of the second portion 41 is alleviated, and stress is less likely to be applied to the first wiring 26 and the second wiring 260 that intersect with the boundary line 42. At the intersections between the first wiring 26 and the second wiring 260 and the eighth side surface 50h, the second portion 41 overlaps the eighth side surface 50h and there is no second insulating layer 270, so that even if the first wiring 26 and the second wiring 260 intersect with the eighth side surface 50h, stress acting from the second substrate 50 to the first wiring 26 and the second wiring 260 is alleviated.

[0084] 16 is a cross-sectional schematic diagram showing an example of a stacked structure of an optical sensor according to a third embodiment. In the following description, the same components as those described in the above-described embodiments are denoted by the same reference numerals, and redundant description will be omitted. Furthermore, configuration examples of the first optical sensor and the second optical sensor according to the third embodiment are omitted because they are similar to the detection device according to the second embodiment. Furthermore, description of the first portion 40 is omitted because it is similar to that of the first embodiment.

[0085] The second substrate 50 is separated from the first substrate 40 by a gap in the longitudinal direction. Each of the two separated second substrates 50 has a first portion 40, 401. The first portion 401 faces the first portion 40 in the first direction Dx. The second portion 41 is sandwiched between the first portions 40, 401 in the first direction Dx.

[0086] The second substrate 50 has a first side 50a, a second side 50b, a third side 50c, a fourth side 50d, a fifth side 50e, a sixth side 50f, a seventh side 50g, a ninth side 50i, a fourteenth side 50p, a fifteenth side 50q, a sixteenth side 50s and a seventeenth side 50t.

[0087] In the detection device 1E according to the third embodiment, the second side surface 21b and the second side surface 50b are parallel planes of equal length and overlap each other. The third side surface 21c and the third side surface 50c are parallel planes of equal length and overlap each other. The fifth side surface 21e and the fifth side surface 50e are parallel planes of equal length and overlap each other. The sixth side surface 21f and the sixth side surface 50f are parallel planes of equal length and overlap each other.

[0088] The first side surface 50a and the first side surface 21a are parallel to each other, but the first side surface 50a is shorter in length than the first side surface 21a. The seventh side surface 50g and the seventh side surface 21g are parallel to each other, but the third side surface 52g is shorter in length than the seventh side surface 21g. Furthermore, the first substrate 21 does not have any side surfaces in the portions that overlap with the ninth side surface 50i, the fourteenth side surface 50p, the fifteenth side surface 50q, the sixteenth side surface 50s, and the seventeenth side surface 50t. As a result, the second substrate 50, which covers the photodiode PD, has an area smaller than that of the first substrate 21, and is separated into two in the first direction Dx, is provided on the first substrate 21.

[0089] On the first portion 40 side, the boundary line 42, which is the boundary between the first portion 401 and the second portion 41, has a first side 421 along the longitudinal direction and a second side 422 that intersects with the first side, and the first wiring 26 and the second wiring 260 intersect with the first side 421. The first wiring 26 and the second wiring 260 do not intersect with the second side 422. The first side 421 is provided on the fifteenth side surface 50q, and the second side 422 is provided on the fourteenth side surface 50p.

[0090] On the first portion 401 side, the boundary line 44, which is the boundary between the first portion 401 and the second portion 41, has a third side 423 along the longitudinal direction and a fourth side 424 that intersects with the first side, and the first wiring 26 and the second wiring 260 intersect with the first side 421. The first wiring 26 and the second wiring 260 do not intersect with the second side 422. The third side 423 is provided on the sixteenth side surface 50s, and the fourth side 424 is provided on the seventeenth side surface 50t.

[0091] In the detection device 1E according to the third embodiment, the first wiring 26 and the second wiring 260 intersect the fifteenth side surface 50q and the sixteenth side surface 50s, which create a step corresponding to the thickness of the first substrate 21. However, when the detection device 1 is bent in the third direction, stress is less likely to be applied to the first wiring 26 and the second wiring 260 on the fifteenth side surface 50q and the sixteenth side surface 50s. As a result, cracks in the first wiring 26 and the second wiring 260 that intersect the fifteenth side surface 50q and the sixteenth side surface 50s are suppressed.

[0092] Furthermore, since the second substrate 50, the second insulating layer 270, and the sealing film 210 are not provided in the second part 41, the first wiring 26 and the second wiring 260 are exposed, and when the detection device 1C is bent in the third direction, the stress on the second part 41 is alleviated, making it less likely that stress will be applied to the first wiring 26 and the second wiring 260.

[0093] The components of each of the above-described embodiments can be combined as appropriate. Furthermore, other effects and advantages brought about by the aspects described in the present embodiments that are obvious from the description in this specification or that can be conceived by a person skilled in the art are naturally understood to be brought about by the present invention.

[0094] 1, 1A, 1B, 1C, 1D, 1E Detector 11 Lower electrode 12 Lower buffer layer 13 Active layer 14 Upper buffer layer 15, 15A, 15B Upper electrode 21 First substrate 26 First wiring 27 First insulating layer 40 First portion 41 Second portion 42, 43, 44 Boundary line 50 Second substrate 210 Sealing film 212 Connection portion 260 Second wiring 270 Second insulating layer 421 First side 422 Second side PD Photodiode AA Active region AB Connection region AC Peripheral region

Claims

1. A photodiode having a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode; a first substrate; a first insulating layer between the first substrate and the photodiode; a second substrate covering at least the photodiode so as to have the photodiode between the first substrate and the second substrate and having an area smaller than that of the first substrate; a second insulating layer between the second substrate and the photodiode; an active region in which the active layer of the photodiode is located; a connection region in which a connection portion provided at an end of the first substrate is located; a peripheral region between the active region and the connection region; a sealing film that seals the active region and the peripheral region; and a first wiring that connects the lower electrode and the connection portion, wherein the peripheral region has: a first portion having the first insulating layer, the sealing film, the second insulating layer, and the second substrate on the first substrate; and a second portion having at least one of the sealing film, the second insulating layer, and the second substrate relative to the first portion, a boundary line provided between the first portion and the second portion and the first wiring intersect along a longitudinal direction of the band-shaped second substrate, the boundary line intersecting with a direction from the connection region toward the active region.

2. The detection device according to claim 1, wherein the second portion has the first insulating layer on the first substrate, and the sealing film, the second insulating layer and the second substrate are cut out.

3. The detection device according to claim 1, wherein the second portion has the first insulating layer, the second insulating layer and the second substrate on the first substrate, and the sealing film is cut out.

4. The detection device according to claim 1, wherein the second portion has the first insulating layer, the second substrate and the sealing film on the first substrate, and the second insulating layer is cut out.

5. The detection device described in claim 1, wherein the second substrate has a plurality of first portions separated by a gap in the longitudinal direction, the second portion is sandwiched between the plurality of first portions, the boundary line has a first side along the longitudinal direction and a second side intersecting the first side, and the first wiring intersects with the first side.

6. The detection device according to claim 1, wherein the first substrate has a cutout portion facing the second portion.

7. The detection device according to claim 1, further comprising a second wiring that connects the upper electrode and the connection portion, and the boundary line intersects with the second wiring.

8. The detection device according to claim 1, wherein the lower electrode and the first wiring are light-transmitting conductors.

9. A photodiode having a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode; a first substrate; a first insulating layer between the first substrate and the photodiode; a second substrate covering at least the photodiode so as to have the photodiode between the first substrate and the second substrate and having an area smaller than that of the first substrate; a second insulating layer between the second substrate and the photodiode; an active region in which the active layer of the photodiode is located; a connection region in which a connection portion provided at an end of the first substrate is located; a peripheral region between the active region and the connection region; a sealing film that seals the active region and the peripheral region; and a first wiring that connects the lower electrode and the connection portion, wherein the connection portion has a plurality of connection terminals arranged in a first direction, and the peripheral region includes: a first portion having the first insulating layer, the sealing film, the second insulating layer, and the second substrate on the first substrate; a second portion having at least one of the sealing film, the second insulating layer, or the second substrate relative to the first portion, a boundary line between the first portion and the second portion intersects with the first wiring along the first direction, and when the first substrate and the second substrate are viewed in a second direction perpendicular to the first direction, the first substrate and the second substrate are bendable so as to protrude in a third direction perpendicular to the first direction and the second direction.