Semiconductor device and method for producing semiconductor device

Abstract

Provided is a semiconductor device comprising: a semiconductor element having a first electrode and a second electrode; a first conduction member located on one side, in a thickness direction, of the first electrode and having a first back surface facing the other side in the thickness direction; a second conduction member located on the one side, in the thickness direction, of the second electrode and having a second back surface facing the other side, in the thickness direction; a first conductive joining material interposed between the first electrode and the first back surface and joined to the first electrode and the first conduction member; and a second conductive joining material interposed between the second electrode and the second back surface and joined to the second electrode and the second conduction member. The second back surface has a smaller area than the first back surface. The distance between the second electrode and the second back surface in the thickness direction is less than the distance between the first electrode and the first back surface in the thickness direction.

Description

Semiconductor device and method for manufacturing the same

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a plurality of leads and a semiconductor element. A source electrode (first electrode) and a gate electrode (second electrode) are formed on a main surface of the semiconductor element. Pad portions of the leads are bonded to the source electrode and the gate electrode via bonding materials, respectively.

[0003] In the semiconductor element of the semiconductor device described in Patent Document 1, the area of ​​the gate electrode is smaller than the area of ​​the source electrode, and the bonding area of ​​the lead bonded to the gate electrode is smaller than the bonding area of ​​the lead bonded to the source electrode. Dimensional errors may occur in the distance between each electrode and the bonding surface of the lead bonded thereto. If the distance between the gate electrode, which has a relatively small area, and the bonding surface of the lead bonded to the gate electrode becomes larger than the set dimension, there is a concern that defects such as poor bonding may occur at the bonding portion between the gate electrode and the lead.

[0004] Japanese Patent Application Laid-Open No. 2019-192751

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device suitable for improving the bonding reliability between an electrode on a semiconductor element and a conductive member bonded to the electrode.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a semiconductor element having a first electrode and a second electrode arranged on one side in a thickness direction, a first conductive member located on one side of the first electrode in the thickness direction and having a first back surface facing the other side in the thickness direction, a second conductive member located on one side of the second electrode in the thickness direction and having a second back surface facing the other side in the thickness direction, a first conductive bonding material interposed between the first electrode and the first back surface and bonded to the first electrode and the first conductive member, and a second conductive bonding material interposed between the second electrode and the second back surface and bonded to the second electrode and the second conductive member. The area of ​​the second back surface is smaller than the area of ​​the first back surface. A second distance in the thickness direction between the second electrode and the second back surface is smaller than a first distance in the thickness direction between the first electrode and the first back surface.

[0007] A second aspect of the present disclosure provides a method for manufacturing a semiconductor device, comprising the steps of: arranging a first bonding layer and a second bonding layer on a semiconductor element having first and second electrodes arranged on one side in a thickness direction; arranging a metal clip member having first and second conductive portions connected to each other on one side of the semiconductor element in the thickness direction; and heating, melting, and solidifying the first bonding layer and the second bonding layer while pressing the metal clip member against the other side of the semiconductor element in the thickness direction. The first conductive portion has a first back surface overlapping the first bonding layer in the thickness direction and facing the other side in the thickness direction. The second conductive portion has a second back surface overlapping the second bonding layer in the thickness direction and facing the other side in the thickness direction. The second back surface is located on the other side in the thickness direction than the first back surface. In the step of heating, melting and solidifying the first and second bonding layers, the metal clip member is pressed against the other side in the thickness direction until the second rear surface receives a reaction force from the second electrode side.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a perspective view showing a main portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. 3 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 4 is a plan view showing a main portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. 5 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 6 is a bottom view showing a main portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. 7 is a side view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 4. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 4. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 4. FIG. 11 is a partially enlarged view of FIG. 8. FIG. 12 is a partially enlarged view of FIG. 9. FIG. 13 is a plan view showing a step in manufacturing the semiconductor device according to the first embodiment of the present disclosure. FIG. 14 is a plan view showing a step subsequent to FIG. 13. FIG. 15 is a partially enlarged side view of the step shown in FIG. 14. FIG. 16 is a partially enlarged side view of the step subsequent to FIG. 15. Fig. 17 is a plan view of a main portion showing a semiconductor device according to a second embodiment of the present disclosure. Fig. 18 is a cross-sectional view taken along line XVIII-XVIII in Fig. 17. Fig. 19 is a partially enlarged view of Fig. 18. Fig. 20 is a plan view of a main portion showing a semiconductor device according to a third embodiment of the present disclosure.

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 12 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a semiconductor element 1, a first conductive member 2, a second conductive member 3, a third conductive member 4, and a sealing resin 5. The semiconductor device A1 further includes a conductive bonding material 19, a first conductive bonding material 29, and a second conductive bonding material 39. The use of the semiconductor device A1 is not limited in any way, and it can be used in electronic devices including a power conversion circuit, such as a DC-DC converter.

[0014] FIG. 1 is a perspective view of the semiconductor device A1. FIG. 2 is a perspective view of a main portion of the semiconductor device A1, with the sealing resin 5 omitted. FIG. 3 is a plan view of the semiconductor device A1. FIG. 4 is a plan view of a main portion of the semiconductor device A1, seen through the sealing resin 5. FIG. 5 is a bottom view of the semiconductor device A1. FIG. 6 is a bottom view of a main portion of the semiconductor device A1, seen through the sealing resin 5. FIG. 7 is a side view of the semiconductor device A1. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 4. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 4. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 4. FIG. 11 is a partially enlarged view of FIG. 8. FIG. 12 is a partially enlarged view of FIG. 9. FIG. 4 is a partially enlarged view of FIG. 4. Note that in FIGS. 4 and 6, the sealing resin 5 seen through is indicated by an imaginary line (two-dot chain line).

[0015] In these figures, for example, an example of the thickness direction is referred to as the "thickness direction z." The direction perpendicular to the thickness direction z (the up-down direction in Figures 3 and 4) is an example of the first direction and is referred to as the "first direction x." The direction perpendicular to the thickness direction z and the first direction x (the left-right direction in Figures 3 and 4) is an example of the second direction and is referred to as the "second direction y." In Figures 3 and 4, the lower side in the figures is an example of "one side of the first direction" and is referred to as the "x1 side of the first direction x," and the upper side in the figures is an example of "the other side of the first direction" and is referred to as the "x2 side of the first direction x." In Figures 3 and 4, the right side in the figures is referred to as the "y1 side of the second direction y," and the left side in the figures is referred to as the "y2 side of the second direction y." 8 to 10, the upper side in the figure is an example of "one side in the thickness direction" and is called the "z1 side in the thickness direction z," and the lower side in the figure is an example of "the other side in the thickness direction" and is called the "z2 side in the thickness direction z."

[0016] The semiconductor element 1 is an element that performs the electrical function of the semiconductor device A1. In this embodiment, the semiconductor element 1 is a three-terminal element having three electrodes, such as a metal-oxide-semiconductor field-effect transistor (MOSFET). Alternatively, the semiconductor element 1 may be a switching element such as an insulated gate bipolar transistor (IGBT), or a diode. In the description of the semiconductor device A1, the semiconductor element 1 is an n-channel MOSFET with a vertical structure. The semiconductor element 1 is rectangular when viewed in the thickness direction z.

[0017] 2, 4, and 8 to 10, the semiconductor element 1 has an element first surface 101, an element second surface 102, a first electrode 11, a second electrode 12, and a third electrode 13. The element first surface 101 and the element second surface 102 are spaced apart in the thickness direction z and face opposite each other, with the element first surface 101 facing the z1 side in the thickness direction z. The element second surface 102 facing the z2 side in the thickness direction z.

[0018] The first electrode 11 is disposed on the element first surface 101. A current corresponding to the power converted by the semiconductor element 1 flows through the first electrode 11. In other words, the first electrode 11 corresponds to the source electrode of the semiconductor element 1.

[0019] The second electrode 12 is disposed on the element first surface 101. A gate voltage for driving the semiconductor element 1 is applied to the second electrode 12. That is, the second electrode 12 corresponds to the gate electrode of the semiconductor element 1. When viewed in the thickness direction z, the area of ​​the second electrode 12 is smaller than the area of ​​the first electrode 11.

[0020] The third electrode 13 is disposed on the element first surface 101. A current corresponding to the power before being converted by the semiconductor element 1 flows through the third electrode 13. In other words, the third electrode 13 corresponds to the drain electrode of the semiconductor element 1.

[0021] The first conductive member 2 includes a portion disposed on the z1 side in the thickness direction z with respect to the semiconductor element 1. The first conductive member 2 includes a conductive material such as metal, and is configured, for example, by a metal plate material. The constituent material of the first conductive member 2 includes, for example, Cu (copper). The first conductive member 2 is a metal plate material that is appropriately bent. As shown in FIGS. 1 to 6 and 8 to 10 , the first conductive member 2 has a pad portion 21 and a plurality of terminal portions 22.

[0022] The pad portion 21 is a portion that is electrically connected to the first electrode 11 of the semiconductor element 1. The shape and size of the pad portion 21 are not limited in any way, and in the illustrated example, the pad portion 21 is shaped to overlap most of the first electrode 11 when viewed in the thickness direction z, and to expose the second electrode 12.

[0023] 8 to 11, the pad portion 21 has a first main surface 211 and a first back surface 212. The first main surface 211 faces the z1 side in the thickness direction z. The first back surface 212 faces the z2 side in the thickness direction z.

[0024] As shown in FIGS. 8 to 11 , the first back surface 212 of the pad portion 21 is bonded to the first electrode 11 of the semiconductor element 1 via a first conductive bonding material 29. The pad portion 21 and the first electrode 11 are electrically connected via the first conductive bonding material 29. The material of the first conductive bonding material 29 is not particularly limited and may be, for example, solder (a metal containing tin and silver). The first conductive bonding material 29 may also be formed of a metal paste containing a metal such as silver (Ag). As shown in FIG. 11 , the distance (first distance d1) between the first electrode 11 and the first back surface 212 in the thickness direction z is, for example, 5 μm or more and 30 μm or less. A plating layer made of, for example, silver (Ag) may be formed on the region of the pad portion 21 that is bonded to the semiconductor element 1 (first electrode 11).

[0025] The multiple terminal portions 22 are connected to the pad portion 21 on the x1 side in the first direction x. The terminal portions 22 each extend in the first direction x when viewed in the thickness direction z and are arranged at intervals in the second direction y. The number of multiple terminal portions 22 is not limited and may be three, as in the illustrated example, or two, four, or more. Alternatively, a configuration including only one terminal portion 22 may be provided. As shown in FIGS. 1, 2, and 8, the terminal portion 22 includes a portion connected to the pad portion 21 and covered by the sealing resin 5, a portion protruding from the sealing resin 5 toward the x1 side in the first direction x, a portion folded back toward the z2 side in the thickness direction z, and a portion located on the z2 side in the thickness direction z. The multiple terminal portions 22 are used as terminals when mounting the semiconductor device A1. The multiple terminal portions 22 are electrically connected to the first electrodes 11 of the semiconductor element 1. The multiple terminal portions 22 are source terminals of the semiconductor device A1.

[0026] A plating layer made of an alloy containing tin (Sn) as a main component may be formed on the portion of the first conductive member 2 (the plurality of terminal portions 22) exposed from the sealing resin 5.

[0027] The second conductive member 3 includes a portion disposed on the z1 side in the thickness direction z with respect to the semiconductor element 1. The second conductive member 3 includes a conductive material such as metal, and is configured, for example, by a metal plate material. The constituent material of the second conductive member 3 includes, for example, Cu (copper). The second conductive member 3 is a metal plate material that is appropriately bent. As shown in FIGS. 1 to 7, 9, and 12, the second conductive member 3 has a first pad portion 31, a terminal portion 32, a first bent portion 33, and a second bent portion 34.

[0028] The first pad portion 31 is a portion that is electrically connected to the second electrode 12 of the semiconductor element 1. The shape and size of the first pad portion 31 are not limited in any way, and in the illustrated example, the first pad portion 31 is shaped to overlap a part of the second electrode 12 when viewed in the thickness direction z, and also to expose the second electrode 12.

[0029] 9 and 12 , the first pad portion 31 has a second main surface 311 and a second back surface 312. The second main surface 311 faces the z1 side in the thickness direction z. The second back surface 312 faces the z2 side in the thickness direction z. The area of ​​the second back surface 312 is smaller than the area of ​​the first back surface 212 of the pad portion 21 in the first conductive member 2.

[0030] The first bent portion 33 is connected to the x1 side of the first pad portion 31 in the first direction x. The first bent portion 33 is inclined toward the x1 side of the first direction x so as to be positioned toward the z1 side of the thickness direction z as it approaches the x1 side of the first direction x. The second bent portion 34 is connected to the x2 side of the first pad portion 31 in the first direction x. The second bent portion 34 is inclined toward the z1 side of the thickness direction z as it approaches the x2 side of the first direction x. As shown in FIG. 12 , the inclination angle α1 of the first bent portion 33 with respect to the first direction x and the inclination angle α2 of the second bent portion 34 with respect to the first direction x are the same. Here, "the inclination angles α1 and α2 are the same" means that the inclination angles α1 and α2 are the same in design, and includes cases where the inclination angles α1 and α2 differ due to manufacturing errors, etc. The inclination angles α1 and α2 are not particularly limited. However, in the illustrated example, the inclination angles α1 and α2 are approximately 45°.

[0031] 9 and 12 , the first pad portion 31, the first bent portion 33, and the second bent portion 34 are bonded to the second electrode 12 of the semiconductor element 1 via a second conductive bonding material 39. The first pad portion 31, the first bent portion 33, and the second bent portion 34 are conductively bonded to the second electrode 12 via the second conductive bonding material 39. In this embodiment, the second conductive bonding material 39 includes a thin portion 391, a first portion 392, and a second portion 393. The thin portion 391 is interposed between the second electrode 12 and the second back surface 312 in the thickness direction z and is in contact with the second electrode 12 and the second back surface 312. The first portion 392 is located on the x1 side of the thin portion 391 in the first direction x and is in contact with the second electrode 12 and the first bent portion 33. The second portion 393 is located on the x2 side of the thin portion 391 in the first direction x, and is in contact with the second electrode 12 and the second bent portion 34 .

[0032] As shown in FIGS. 11 and 12 , the distance between the second electrode 12 and the second rear surface 312 in the thickness direction z (second distance d2) is smaller than the distance between the first electrode 11 and the first rear surface 212 in the thickness direction z (first distance d1). The second distance d2 between the second electrode 12 and the second rear surface 312 in the thickness direction z is, for example, 1 μm or more and 20 μm or less. The second electrode 12 and the second rear surface 312 may be in partial contact. Furthermore, the ratio of the first distance d1 between the first electrode 11 and the first rear surface 212 in the thickness direction z to the dimension t1 in the thickness direction z from the second rear surface 312 to the second main surface 311 is, for example, 0.5% or more and 10% or less. When the first distance d1 is 5 μm or more and 30 μm or less as described above, the dimension t1 is, for example, approximately 0.1 mm or more and 1 mm or less.

[0033] The constituent material of the second conductive bonding material 39 is not particularly limited and may be, for example, solder (a metal containing tin and silver). Alternatively, the second conductive bonding material 39 may be formed of a metal paste containing a metal such as silver (Ag). A plating layer made of, for example, silver (Ag) may be formed on the regions of the first pad portion 31, the first bent portion 33, and the second bent portion 34 that are bonded to the semiconductor element 1 (second electrode 12).

[0034] The terminal portion 32 is connected to the x1 side of the first bent portion 33 in the first direction x. The terminal portion 32 extends in the first direction x when viewed in the thickness direction z. As shown in FIGS. 1 , 2 , 7 , and 9 , the terminal portion 32 includes a portion connected to the first bent portion 33 and covered with the sealing resin 5, a portion protruding from the sealing resin 5 toward the x1 side in the first direction x, a portion folded back toward the z2 side in the thickness direction z, and a portion located on the z2 side in the thickness direction z. When viewed in the second direction y, the terminal portion 32 has a shape and size that generally overlaps with the terminal portion 22. The terminal portion 32 is used as a terminal when mounting the semiconductor device A1. The terminal portion 32 is electrically connected to the second electrode 12 of the semiconductor element 1. The terminal portion 32 is a gate terminal of the semiconductor device A1.

[0035] A plating layer made of an alloy containing tin (Sn) as a main component may be formed on the portion of the second conductive member 3 (terminal portion 32) exposed from the sealing resin 5, for example.

[0036] The third conductive member 4 is disposed on the z2 side in the thickness direction z with respect to the semiconductor element 1. The third conductive member 4 includes a conductive material such as a metal, for example, copper (Cu).

[0037] As shown in FIGS. 1 to 10 , the third conductive member 4 has a main surface 401 and a back surface 402. The main surface 401 faces the z1 side in the thickness direction z. The back surface 402 faces the z2 side in the thickness direction z. The semiconductor element 1 is mounted on the main surface 401. As shown in FIGS. 5 and 6 , the back surface 402 is exposed from the sealing resin 5.

[0038] As shown in FIGS. 1 to 10, the third conductive member 4 has an island portion 41, a terminal portion 42, and a through hole 43.

[0039] The island portion 41 is a portion on which the entire or part of the semiconductor element 1 is mounted. The island portion 41 includes a part of the main surface 401 and a part of the back surface 402. The shape and size of the island portion 41 are not limited in any way, and in the illustrated example, it is substantially rectangular when viewed in the thickness direction z.

[0040] As shown in FIGS. 2 , 4 , 6 , and 8 to 10 , the island portion 41 has a first edge 411, a second edge 412, a third edge 413, and a groove 414. The first edge 411 is located on the y1 side of the second direction y and extends in the first direction x. The second edge 412 is located on the y2 side of the second direction y and extends in the first direction x. The third edge 413 is located on the x1 side of the first direction x and extends in the second direction y. The groove 414 is recessed from the main surface 401 toward the z2 side of the thickness direction z and has a generally V-shaped cross section. The groove 414 surrounds the semiconductor element 1 when viewed in the thickness direction z. Each of the first edge 411, the second edge 412, the third edge 413, and the groove 414 is covered with a sealing resin 5. Unlike the illustrated example, the island portion 41 may have no recessed groove 414 .

[0041] 4 and 6 , the first edge portion 411 has a first step portion 411a. The first step portion 411a is formed closer to the x2 side of the first direction x than the semiconductor element 1 in the first direction x. The first step portion 411a has a shape that is recessed more toward the y2 side of the second direction y on the x2 side of the first direction x than on the x1 side of the first direction x. In this embodiment, the first step portion 411a is inclined with respect to the first direction x and the second direction y so that it is positioned closer to the y2 side of the second direction y as it approaches the x2 side of the first direction x in the first direction x.

[0042] The second edge portion 412 has a second step portion 412a. The second step portion 412a is formed closer to the x2 side of the first direction x than the semiconductor element 1 in the first direction x. The second step portion 412a has a shape that is recessed more toward the y1 side of the second direction y on the x2 side of the first direction x than on the x1 side of the first direction x. In this embodiment, the second step portion 412a is inclined with respect to the first direction x and the second direction y so that it is positioned closer to the y1 side of the second direction y as it approaches the x2 side of the first direction x.

[0043] 4, 6, and 10, the island portion 41 includes a main portion 41A, a first thin portion 41B, and a second thin portion 41C. The main portion 41A has a part of a main surface 401 and a part of a back surface 402.

[0044] The first thin-walled portion 41B is a portion connected to the y1 side of the main portion 41A in the second direction y. The first thin-walled portion 41B has a part of the main surface 401 and a first intermediate surface 403. The first thin-walled portion 41B is a portion that does not have a back surface 402. The first intermediate surface 403 faces the z2 side in the thickness direction z. The first intermediate surface 403 is located between the main surface 401 and the back surface 402 in the thickness direction z. As a result, the first thin-walled portion 41B has a shape that is recessed on the z2 side in the thickness direction z with respect to the main portion 41A. In the illustrated example, the first thin-walled portion 41B includes the entire first edge portion 411. The first step portion 411a is formed in the first thin-walled portion 41B.

[0045] The second thin-walled portion 41C is a portion connected to the y2 side of the main portion 41A in the second direction y. The second thin-walled portion 41C has a part of the main surface 401 and a second intermediate surface 404. The second thin-walled portion 41C is a portion that does not have a back surface 402. The second intermediate surface 404 faces the z2 side in the thickness direction z. The second intermediate surface 404 is located between the main surface 401 and the back surface 402 in the thickness direction z. As a result, the second thin-walled portion 41C has a shape that is recessed on the z2 side in the thickness direction z with respect to the main portion 41A. In the illustrated example, the second thin-walled portion 41C includes the entire second edge portion 412. The second step portion 412a is formed in the second thin-walled portion 41C.

[0046] 4, 10, etc., the semiconductor element 1 overlaps the main portion 41A and the first thin portion 41B when viewed in the thickness direction z. The semiconductor element 1 also overlaps the main portion 41A and the second thin portion 41C when viewed in the thickness direction z.

[0047] As shown in FIGS. 8 to 10 , the semiconductor element 1 is bonded to the main surface 401 of the island portion 41 via a conductive bonding material 19. The second element surface 102 of the semiconductor element 1 faces the main surface 401. The third electrode 13 on the second element surface 102 is conductively bonded to the main surface 401 via the conductive bonding material 19. The material of the conductive bonding material 19 is not particularly limited, and may be, for example, solder (a metal containing tin and silver). Alternatively, the conductive bonding material 19 may be formed of a metal paste containing a metal such as silver (Ag). A plating layer made of, for example, silver (Ag) may be formed on the region of the main surface 401 of the island portion 41 to which the semiconductor element 1 is bonded.

[0048] The terminal portion 42 is a portion connected to the island portion 41 on the x2 side in the first direction x. The terminal portion 42 includes a portion of the main surface 401 and a portion of the back surface 402. The terminal portion 42 may be used as a terminal when mounting the semiconductor device A1. The terminal portion 42 is electrically connected to the third electrode 13 of the semiconductor element 1. The terminal portion 42 is a drain terminal of the semiconductor device A1.

[0049] The through hole 43 penetrates the third conductive member 4 in the thickness direction z. In this embodiment, the through hole 43 is filled with a portion of the sealing resin 5. The size of the cross section of the through hole 43 perpendicular to the thickness direction z is larger on the z2 side in the thickness direction z than on the z1 side in the thickness direction z. This has the effect of, for example, preventing the third conductive member 4 from falling off the sealing resin 5.

[0050] A plating layer made of an alloy containing tin (Sn) as a main component may be formed on the portion of third conductive member 4 that is exposed from sealing resin 5 .

[0051] The sealing resin 5 covers the semiconductor element 1 and a portion of each of the first conductive member 2, the second conductive member 3, and the third conductive member 4. The sealing resin 5 has electrical insulation properties. The sealing resin 5 includes, for example, a black epoxy resin containing a filler. The shape of the sealing resin 5 is not limited in any way. As shown in FIGS. 1 and 3 to 10 , the sealing resin 5 of this embodiment has a first resin surface 51, a second resin surface 52, a third resin surface 53, a fourth resin surface 54, a fifth resin surface 55, and a sixth resin surface 56.

[0052] The first resin surface 51 faces the z1 side in the thickness direction z. The second resin surface 52 faces the z2 side in the thickness direction z. The back surface 402 of the third conductive member 4 is exposed from the second resin surface 52. In the illustrated example, the first resin surface 51 and the second resin surface 52 are flat surfaces, but are not limited to this and may be curved or bent surfaces, for example. In the illustrated example, the second resin surface 52 and the back surface 402 are flush with each other.

[0053] The third resin surface 53 is a surface facing the x1 side in the first direction x. The fourth resin surface 54 is a surface facing the x2 side in the first direction x. In the illustrated example, the third resin surface 53 and the fourth resin surface 54 are slightly curved surfaces, but this is not limited thereto and may be, for example, a curved surface or a flat surface. In this embodiment, a plurality of terminal portions 22 and a terminal portion 32 protrude from the third resin surface 53, and a terminal portion 42 protrudes from the fourth resin surface 54.

[0054] The fifth resin surface 55 is a surface facing the y1 side in the second direction y. The sixth resin surface 56 is a surface facing the y2 side in the second direction y. In the illustrated example, the fifth resin surface 55 and the sixth resin surface 56 are slightly curved surfaces, but are not limited to this and may be, for example, curved surfaces or flat surfaces.

[0055] Next, an example of a method for manufacturing the semiconductor device A1 will be described below with reference to Figures 13 to 16. Figures 13 and 14 are plan views showing one step in the manufacture of the semiconductor device A1. Figure 15 is a partially enlarged side view of the step shown in Figure 14. Figure 16 is a partially enlarged side view showing a step subsequent to Figure 15.

[0056] FIG. 13 shows a state in which a first bonding layer 929 and a second bonding layer 939 are disposed on a semiconductor element 1 mounted on a third conductive member 4. The first bonding layer 929 and the second bonding layer 939 will later become the first conductive bonding material 29 and the second conductive bonding material 39, and are, for example, solder paste applied with a dispenser. Next, as shown in FIGS. 14 and 15 , a metal clip member 90 is disposed on the z1 side of the semiconductor element 1 in the thickness direction z. The metal clip member 90 has a first conductive portion 92 and a second conductive portion 93 that are connected to each other. The first conductive portion 92 and the second conductive portion 93 will later become the first conductive member 2 and the second conductive member 3, and are configured such that adjacent terminal portions 22 are connected to each other and adjacent terminal portions 22 and 32 are connected to each other by connecting portions 94. Here, the first back surface 212 of the first conductive portion 92 (pad portion 21) overlaps the first bonding layer 929 when viewed in the thickness direction z. The second back surface 312 of the second conductive portion 93 (first pad portion 31) overlaps the second bonding layer 939 when viewed in the thickness direction z. As shown in FIG. 15 , the first back surface 212 of the first conductive portion 92 (pad portion 21) is located on the z2 side in the thickness direction z relative to the second back surface 312 of the second conductive portion 93 (first pad portion 31). The distance between the first back surface 212 and the second back surface 312 in the thickness direction z is, for example, approximately 1 μm or more and 20 μm or less. Note that in FIG. 15 and FIG. 16 (described later), the second bonding layer 939 is hatched for ease of understanding.

[0057] Next, as shown in FIG. 16 , while pressing the metal clip member 90 toward the z2 side in the thickness direction z against the semiconductor element 1 (see arrow N1), the first bonding layer 929 and the second bonding layer 939 are heated, melted, and solidified. The metal clip member 90 is then pressed toward the z2 side in the thickness direction z until the second back surface 312 receives a reaction force from the second electrode 12 (see arrow N2). At this time, the second bonding layer 939 interposed between the second electrode 12 and the second back surface 312 is extruded to the periphery, forming a thin portion 9391, a first portion 9392, and a second portion 9393. At this time, the distance between the second electrode 12 and the second back surface 312 is smaller than the distance between the first electrode 11 and the first back surface 212. Thereafter, the sealing resin 5 is formed, and the connecting portions 94 and the like are appropriately cut to separate the multiple terminal portions 22 and the multiple terminal portions 32 from each other. The multiple terminal portions 22 and the multiple terminal portions 32 are then bent. In this manner, the first conductive member 2 and the second conductive member 3 are formed.

[0058] Next, the operation of the semiconductor device A1 will be described.

[0059] The semiconductor device A1 includes a first conductive bonding material 29 and a second conductive bonding material 39. The first conductive bonding material 29 is interposed between the first electrode 11 and the first back surface 212 of the first conductive member 2 and is bonded to the first electrode 11 and the first conductive member 2. The second conductive bonding material 39 is interposed between the second electrode 12 and the second back surface 312 of the second conductive member 3 and is bonded to the second electrode 12 and the second conductive member 3. The area of ​​the second back surface 312 is smaller than the area of ​​the first back surface 212. The distance between the second electrode 12 and the second back surface 312 in the thickness direction z (second distance d2) is smaller than the distance between the first electrode 11 and the first back surface 212 in the thickness direction z (first distance d1). This configuration stabilizes the bond between the second electrode 12, which has a relatively small area, and the second conductive member 3 bonded to the second electrode 12, thereby improving bonding reliability.

[0060] The second conductive member 3 includes a first pad portion 31 having a second back surface 312, a first bent portion 33, and a second bent portion 34. The first bent portion 33 is connected to the x1 side of the first pad portion 31 in the first direction x and is positioned toward the z1 side of the thickness direction z as it approaches the x1 side of the first direction x. The second bent portion 34 is connected to the x2 side of the first pad portion 31 in the first direction x and is positioned toward the z1 side of the thickness direction z as it approaches the x2 side of the first direction x. The second conductive bonding material 39 includes a first portion 392 in contact with the second electrode 12 and the first bent portion 33, and a second portion 393 in contact with the second electrode 12 and the second bent portion 34. This configuration reduces bias and makes the bonding state between the second electrode 12 and the second conductive member 3 (the first pad portion 31, the first bent portion 33, and the second bent portion 34) more stable, which is more suitable for improving bonding reliability. Furthermore, the inclination angle α1 of the first bent portion 33 with respect to the first direction x and the inclination angle α2 of the second bent portion 34 with respect to the first direction x are the same. This makes it possible for the first portion 392 in contact with the first bent portion 33 and the second portion 393 in contact with the second bent portion 34 to be formed more evenly in the first direction x. This is preferable in terms of improving the bonding reliability of the semiconductor device A1.

[0061] 17 to 20 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals, and redundant explanations will be omitted. Furthermore, the configurations of the various parts in each embodiment can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0062] Second Embodiment: Figures 17 to 19 show a semiconductor device according to a second embodiment of the present disclosure. Figure 17 is a plan view of a main part of a semiconductor device A2 according to this embodiment, seen through the sealing resin 5. Figure 18 is a cross-sectional view taken along line XVIII-XVIII in Figure 17. Figure 19 is a partially enlarged view of Figure 18. Note that in Figure 17, the see-through sealing resin 5 is shown by an imaginary line (two-dot chain line).

[0063] The semiconductor device A2 further includes a fourth conductive member 6 and a third conductive bonding material 69, and accordingly has been appropriately modified compared to the semiconductor device A1. In this embodiment, the pad portion 21 of the first conductive member 2 exposes a portion of the first electrode 11 (the corners on the x1 side in the first direction x and the y1 side in the second direction y). In this embodiment, the first conductive member 2 includes two terminal portions 22.

[0064] The fourth conductive member 6 is disposed apart from the second conductive member 3 in the second direction y. In this embodiment, the fourth conductive member 6 is disposed between the first conductive member 2 (terminal portion 22) and the second conductive member 3 in the second direction y. The fourth conductive member 6 includes a portion disposed on the z1 side in the thickness direction z with respect to the semiconductor element 1. The fourth conductive member 6 includes a conductive material such as metal and is formed, for example, by a metal plate material. The constituent material of the fourth conductive member 6 includes, for example, Cu (copper). The fourth conductive member 6 is formed by an appropriately bent metal plate material. The fourth conductive member 6 has a second pad portion 61, a terminal portion 62, a third bent portion 63, and a third bent portion 63.

[0065] The second pad portion 61 is a portion that is electrically connected to the first electrode 11 of the semiconductor element 1. The shape and size of the second pad portion 61 are not limited in any way, and in the illustrated example, the second pad portion 61 has a shape that overlaps with a part of the first electrode 11 when viewed in the thickness direction z and also exposes the first electrode 11.

[0066] 18 and 19 , the second pad portion 61 has a third main surface 611 and a third back surface 612. The third main surface 611 faces the z1 side in the thickness direction z. The third back surface 612 faces the z2 side in the thickness direction z. The area of ​​the third back surface 612 is smaller than the area of ​​the first back surface 212 of the pad portion 21 in the first conductive member 2.

[0067] The third bent portion 63 is connected to the x1 side of the second pad portion 61 in the first direction x. The third bent portion 63 is inclined toward the x1 side of the first direction x so as to be positioned toward the z1 side of the thickness direction z as it approaches the x1 side of the first direction x. The fourth bent portion 64 is connected to the x2 side of the second pad portion 61 in the first direction x. The fourth bent portion 64 is inclined toward the z1 side of the thickness direction z as it approaches the x2 side of the first direction x. As shown in FIG. 19 , the inclination angle α3 of the third bent portion 63 with respect to the first direction x and the inclination angle α4 of the fourth bent portion 64 with respect to the first direction x are the same. Here, "the inclination angles α3 and α4 are the same" means that the inclination angles α3 and α4 are the same in design, and includes cases where the inclination angles α3 and α4 differ due to manufacturing errors, etc. The inclination angles α3 and α4 are not particularly limited. However, in the illustrated example, the inclination angles α3 and α4 are approximately 45°.

[0068] 18 and 19 , the second pad portion 61, the third bent portion 63, and the fourth bent portion 64 are bonded to the first electrode 11 of the semiconductor element 1 via a third conductive bonding material 69. The second pad portion 61, the third bent portion 63, and the fourth bent portion 64 are conductively bonded to the first electrode 11 via the third conductive bonding material 69. In this embodiment, the third conductive bonding material 69 includes a thin portion 691, a third portion 692, and a fourth portion 693. The thin portion 691 is interposed between the first electrode 11 and the third rear surface 612 in the thickness direction z and is in contact with the first electrode 11 and the third rear surface 612. The third portion 692 is located on the x1 side of the thin portion 691 in the first direction x and is in contact with the first electrode 11 and the third bent portion 63. The fourth portion 693 is located on the x2 side of the thin portion 691 in the first direction x, and is in contact with the first electrode 11 and the fourth bent portion 64 .

[0069] The distance (third distance d3) between the first electrode 11 and the third back surface 612 in the thickness direction z (see FIG. 19 ) is smaller than the distance (first distance d1) between the first electrode 11 and the first back surface 212 in the thickness direction z (see FIG. 11 ). The third distance d3 between the first electrode 11 and the third back surface 612 in the thickness direction z is, for example, 1 μm or more and 20 μm or less. Note that the first electrode 11 and the third back surface 612 may be in partial contact with each other.

[0070] The constituent material of the third conductive bonding material 69 is not particularly limited and may be, for example, solder (a metal containing tin and silver). Alternatively, the third conductive bonding material 69 may be formed of a metal paste containing a metal such as silver (Ag). Note that a plating layer made of, for example, silver (Ag) may be formed on the regions of the second pad portion 61, the third bent portion 63, and the fourth bent portion 64 that are bonded to the semiconductor element 1 (first electrode 11).

[0071] The terminal portion 62 is connected to the third bent portion 63 on the x1 side in the first direction x. The terminal portion 62 extends in the first direction x when viewed in the thickness direction z. As shown in FIGS. 17 and 18 , the terminal portion 62 includes a portion connected to the third bent portion 63 and covered by the sealing resin 5, a portion protruding from the sealing resin 5 toward the x1 side in the first direction x, a portion folded back toward the z2 side in the thickness direction z, and a portion located on the z2 side in the thickness direction z. When viewed in the second direction y, the terminal portion 62 has a shape and size that generally overlaps the terminal portions 22 and 32. The terminal portion 62 is used as a terminal when mounting the semiconductor device A1. The terminal portion 62 is electrically connected to the first electrode 11 of the semiconductor element 1. The terminal portion 62 serves as a source sense terminal of the semiconductor device A1.

[0072] The semiconductor device A2 of this embodiment can be manufactured in the same manner as described above with reference to FIGS. 13 to 16 regarding the manufacturing direction of the semiconductor device A1 of the above embodiment.

[0073] The semiconductor device A2 achieves the same effects as the semiconductor device A1 described above. The semiconductor device A2 further includes a fourth conductive member 6 and a third conductive bonding material 69. The third conductive bonding material 69 is interposed between the first electrode 11 and a third back surface 612 of the fourth conductive member 6 and is bonded to the first electrode 11 and the fourth conductive member 6. The area of ​​the third back surface 612 is smaller than the area of ​​the first back surface 212. The distance between the first electrode 11 and the third back surface 612 in the thickness direction z (third distance d3) is smaller than the distance between the first electrode 11 and the first back surface 212 in the thickness direction z (first distance d1). This configuration stabilizes the bond between the third back surface 612 (fourth conductive member 6), which has a relatively small bonding surface area, and the first electrode 11 bonded to the fourth conductive member 6, thereby improving bonding reliability.

[0074] The fourth conductive member 6 includes a second pad portion 61 having a third back surface 612, a third bent portion 63, and a fourth bent portion 64. The third bent portion 63 is connected to the x1 side of the second pad portion 61 in the first direction x and is positioned toward the z1 side in the thickness direction z as it approaches the x1 side in the first direction x. The fourth bent portion 64 is connected to the x2 side of the second pad portion 61 in the first direction x and is positioned toward the z1 side in the thickness direction z as it approaches the x2 side in the first direction x. The third conductive bonding material 69 includes a third portion 692 in contact with the first electrode 11 and the third bent portion 63, and a fourth portion 693 in contact with the first electrode 11 and the fourth bent portion 64. This configuration reduces bias and makes the bonding state between the first electrode 11 and the fourth conductive member 6 (the second pad portion 61, the third bent portion 63, and the fourth bent portion 64) more stable, which is more suitable for improving bonding reliability. Furthermore, the inclination angle α3 of the third bent portion 63 with respect to the first direction x and the inclination angle α4 of the fourth bent portion 64 with respect to the first direction x are the same. This makes the third portion 692 in contact with the third bent portion 63 and the fourth portion 693 in contact with the fourth bent portion 64 more uniformly formed in the first direction x. This is preferable in terms of improving the bonding reliability of the semiconductor device A2.

[0075] Third Embodiment: Fig. 20 shows a semiconductor device according to a third embodiment of the present disclosure. Fig. 20 is a plan view of a main part of a semiconductor device A3 according to this embodiment, seen through the sealing resin 5. In Fig. 20, the sealing resin 5 seen through is indicated by an imaginary line (two-dot chain line).

[0076] The semiconductor device A3 of this embodiment includes a fourth conductive member 6 and a third conductive bonding material 69, similar to the semiconductor device A2 described above. The semiconductor device A3 differs from the semiconductor device A2 in the arrangement of the fourth conductive member 6. In the semiconductor device A3, the fourth conductive member 6 is arranged on the y2 side of the second direction y, and is located on the opposite side of the second conductive member 3 relative to the first conductive member 2 in the second direction y. While detailed illustrations are omitted, the specific configurations of the fourth conductive member 6 and the third conductive bonding material 69 are similar to those of the semiconductor device A2 described above. The semiconductor device A3 of this embodiment can be manufactured using the same method as described above with reference to FIGS. 13 to 16 regarding the manufacturing direction of the semiconductor device A1 of the above embodiment. The semiconductor device A3 achieves the same effects as the semiconductor devices A1 and A2 described above.

[0077] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0078] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a semiconductor element having a first electrode and a second electrode arranged on one side in a thickness direction; a first conductive member located on one side in the thickness direction of the first electrode and having a first back surface facing the other side in the thickness direction; a second conductive member located on one side in the thickness direction of the second electrode and having a second back surface facing the other side in the thickness direction; a first conductive bonding material interposed between the first electrode and the first back surface and bonded to the first electrode and the first conductive member; and a second conductive bonding material interposed between the second electrode and the second back surface and bonded to the second electrode and the second conductive member, wherein an area of ​​the second back surface is smaller than an area of ​​the first back surface, and a second distance in the thickness direction between the second electrode and the second back surface is smaller than a first distance in the thickness direction between the first electrode and the first back surface. Supplementary note 2. The semiconductor device according to Supplementary Note 1, wherein the second conductive member includes a first pad portion having the second back surface, a first bent portion connected to one side of the first pad portion in a first direction orthogonal to the thickness direction and positioned toward one side of the thickness direction as it approaches the one side of the first direction, and a second bent portion connected to the other side of the first pad portion in the first direction and positioned toward the other side of the thickness direction as it approaches the other side of the first direction, and the second conductive bonding material includes a first portion in contact with the second electrode and the first bent portion, and a second portion in contact with the second electrode and the second bent portion.Supplementary Note 3. The semiconductor device according to Supplementary Note 2, wherein an inclination angle of the first bent portion with respect to the first direction and an inclination angle of the second bent portion with respect to the first direction are the same.Supplementary Note 4. The semiconductor device according to any one of Supplements 1 to 3, wherein a constituent material of the first conductive bonding material and a constituent material of the second conductive bonding material include solder.Supplementary Note 5. the first conductive member and the second conductive member are made of metal plates, the second conductive member has a second main surface that overlaps the second back surface when viewed in the thickness direction and faces one side in the thickness direction, and a ratio of the first distance to a dimension in the thickness direction from the second back surface to the second main surface is 0.5% or more and 10% or less.Appendix 6. The semiconductor device according to Appendix 5, wherein the constituent material of the first conductive member and the constituent material of the second conductive member include copper. Appendix 7. The semiconductor device according to any of Appendixes 1 to 6, wherein the first distance is 5 μm or more and 30 μm or less. Appendix 8. The semiconductor device according to any of Appendixes 1 to 7, further comprising a sealing resin covering the semiconductor element and at least a portion of each of the first conductive member and the second conductive member. Appendix 9. The semiconductor device according to any of Appendixes 1 to 8, further comprising a third conductive member, wherein the semiconductor element has a third electrode arranged on the other side in the thickness direction, and the third conductive member is arranged on the other side in the thickness direction relative to the semiconductor element and is conductively joined to the third electrode. Appendix 10. The semiconductor device according to Appendix 9, wherein the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode, wherein the first electrode is the source electrode, the second electrode is the gate electrode, and the third electrode is the drain electrode. Appendix 11. Appendix 11. The semiconductor device according to Appendix 10, further comprising: a fourth conductive member located on one side of the first electrode in the thickness direction and having a third back surface facing the other side in the thickness direction; and a third conductive bonding material interposed between the first electrode and the third back surface and bonded to the first electrode and the fourth conductive member, wherein an area of ​​the third back surface is smaller than an area of ​​the first back surface, and a third distance between the first electrode and the third back surface in the thickness direction is smaller than the first distance. The semiconductor device described in Appendix 11, wherein the fourth conductive member includes a second pad portion having the third back surface, a third bend portion connected to one side of the second pad portion in the first direction and positioned on one side of the thickness direction as it approaches the one side of the first direction, and a fourth bend portion connected to the other side of the second pad portion in the first direction and positioned on the other side of the thickness direction as it approaches the other side of the first direction, and the third conductive bonding material includes a third portion in contact with the first electrode and the third bend portion, and a fourth portion in contact with the first electrode and the fourth bend portion.Appendix 13. The semiconductor device according to Appendix 11 or 12, wherein the fourth conductive member is disposed apart from the second conductive member in a second direction perpendicular to the thickness direction and the first direction. Appendix 14. The semiconductor device according to Appendix 13, wherein the fourth conductive member is located on the opposite side of the first conductive member from the second conductive member in the second direction. Appendix 15. a step of arranging a first bonding layer and a second bonding layer on a first electrode and a second electrode of a semiconductor element having the first electrode and the second electrode arranged on one side in a thickness direction; a step of arranging a metal clip member having a first conductive portion and a second conductive portion connected to each other on one side in the thickness direction of the semiconductor element; and a step of heating, melting, and solidifying the first bonding layer and the second bonding layer while pressing the metal clip member against the semiconductor element on the other side in the thickness direction, wherein the first conductive portion has a first back surface overlapping the first bonding layer in the thickness direction and facing the other side in the thickness direction, the second conductive portion has a second back surface overlapping the second bonding layer in the thickness direction and facing the other side in the thickness direction, and the second back surface is located on the other side in the thickness direction of the first back surface, In the process of heating, melting, and solidifying the first bonding layer and the second bonding layer, the metal clip member is pressed against the other side in the thickness direction until the second rear surface receives a reaction force from the second electrode side.

[0079] A1, A2, A3, A4, A5: semiconductor device 1: semiconductor element 101: element first surface 102: element second surface 11: first electrode 12: second electrode 13: third electrode 19: conductive bonding material 2: first conductive member 21: pad portion 211: first main surface 212: first back surface 22: terminal portion 29: first conductive bonding material 3: second conductive member 31: first pad portion 311: second main surface 312: second back surface 32: terminal portion 33: first bent portion 34: second bent portion 39: second conductive bonding material 391: thin portion 392: first portion 393: second portion 4: third conductive member 401: main surface 402: back surface 403: first intermediate surface 404: second intermediate surface 41: Island portion 41A: Main portion 41B: First thin portion 41C: Second thin portion 411: First edge portion 411a: First step portion 412: Second edge portion 412a: Second step portion 413: Third edge portion 414: Groove 42: Terminal portion 43: Through hole 5: Sealing resin 51: First resin surface 52: Second resin surface 53: Third resin surface 54: Fourth resin surface 55: Fifth resin surface 56: Sixth resin surface 6: Fourth conductive member 61: Second pad portion 611: Third main surface 612: Third back surface 62: Terminal portion 63: Third bent portion 64: Fourth bent portion 69: Third conductive bonding material 691: Thin portion 692: Third portion 693: Fourth portion 90: Metal clip member 92: First conductive portion 929: First bonding layer 93: Second conductive portion 939: Second bonding layer 9391: Thin portion 9392: First portion 9393: Second portion 94: Connecting portion α1, α2, α3, α4 d1: First distance d2: Second distance d3: Third distance t1: Dimension

Claims

1. a semiconductor element having a first electrode and a second electrode disposed on one side in a thickness direction; a first conductive member located on one side of the first electrode in the thickness direction and having a first back surface facing the other side in the thickness direction; a second conductive member located on one side of the second electrode in the thickness direction and having a second back surface facing the other side in the thickness direction; a first conductive bonding material interposed between the first electrode and the first back surface and bonded to the first electrode and the first conductive member; a second conductive bonding material interposed between the second electrode and the second back surface and bonded to the second electrode and the second conductive member, an area of ​​the second rear surface is smaller than an area of ​​the first rear surface; a second distance between the second electrode and the second rear surface in the thickness direction is smaller than a first distance between the first electrode and the first rear surface in the thickness direction.

2. the second conductive member includes a first pad portion having the second back surface, a first bent portion connected to one side of the first pad portion in a first direction perpendicular to the thickness direction and positioned toward one side of the thickness direction as it approaches the one side of the first direction, and a second bent portion connected to the other side of the first pad portion in the first direction and positioned toward the other side of the thickness direction as it approaches the other side of the first direction, 2. The semiconductor device according to claim 1, wherein the second conductive bonding material includes a first portion in contact with the second electrode and the first bent portion, and a second portion in contact with the second electrode and the second bent portion.

3. The semiconductor device according to claim 2 , wherein an inclination angle of the first bent portion with respect to the first direction is the same as an inclination angle of the second bent portion with respect to the first direction.

4. The semiconductor device according to claim 1 , wherein the first conductive bonding material and the second conductive bonding material each contain solder.

5. the first conductive member and the second conductive member are made of metal plates, the second conductive member has a second main surface that overlaps the second back surface when viewed in the thickness direction and faces one side in the thickness direction, 2 . The semiconductor device according to claim 1 , wherein a ratio of the first distance to a dimension in the thickness direction from the second rear surface to the second main surface is not less than 0.5% and not more than 10%.

6. The semiconductor device according to claim 5 , wherein a constituent material of said first conductive member and a constituent material of said second conductive member contain copper.

7. The semiconductor device according to claim 1 , wherein the first distance is not less than 5 μm and not more than 30 μm.

8. The semiconductor device according to claim 1 , further comprising a sealing resin that covers said semiconductor element and at least a portion of each of said first conductive member and said second conductive member.

9. Further provided with a third conductive member, the semiconductor element has a third electrode disposed on the other side in the thickness direction, 9. The semiconductor device according to claim 1, wherein the third conductive member is disposed on the other side of the semiconductor element in the thickness direction and is conductively joined to the third electrode.

10. the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode; 10. The semiconductor device according to claim 9, wherein said first electrode is said source electrode, said second electrode is said gate electrode, and said third electrode is said drain electrode.

11. a fourth conductive member located on one side of the first electrode in the thickness direction and having a third back surface facing the other side in the thickness direction; a third conductive bonding material interposed between the first electrode and the third back surface and bonded to the first electrode and the fourth conductive member, an area of ​​the third rear surface is smaller than an area of ​​the first rear surface; The semiconductor device according to claim 10 , wherein a third distance between the first electrode and the third rear surface in the thickness direction is smaller than the first distance.

12. the fourth conductive member includes a second pad portion having the third back surface, a third bent portion connected to one side of the second pad portion in a first direction perpendicular to the thickness direction and positioned toward one side of the thickness direction as it approaches the one side of the first direction, and a fourth bent portion connected to the other side of the second pad portion in the first direction and positioned toward the other side of the thickness direction as it approaches the other side of the first direction, 12. The semiconductor device according to claim 11, wherein the third conductive bonding material includes a third portion in contact with the first electrode and the third bent portion, and a fourth portion in contact with the first electrode and the fourth bent portion.

13. The semiconductor device according to claim 11 , wherein the fourth conductive member is disposed apart from the second conductive member in a second direction perpendicular to the thickness direction.

14. The semiconductor device according to claim 13 , wherein the fourth conductive member is located on an opposite side of the first conductive member from the second conductive member in the second direction.

15. a step of arranging a first bonding layer and a second bonding layer on a first electrode and a second electrode of a semiconductor element disposed on one side in a thickness direction; a step of disposing a metal clip member having a first conductive portion and a second conductive portion connected to each other on one side of the semiconductor element in the thickness direction; and heating, melting, and solidifying the first and second bonding layers while pressing the metal clip member against the other side of the semiconductor element in the thickness direction, the first conductive portion overlaps the first bonding layer when viewed in the thickness direction and has a first back surface facing the other side in the thickness direction; the second conductive portion overlaps the second bonding layer when viewed in the thickness direction and has a second back surface facing the other side in the thickness direction; the second rear surface is located on the other side in the thickness direction than the first rear surface, In the process of heating, melting, and solidifying the first bonding layer and the second bonding layer, the metal clip member is pressed against the other side in the thickness direction until the second rear surface receives a reaction force from the second electrode side.