Semiconductor device

Abstract

This semiconductor device comprises one or more semiconductor elements, a conductive support member, and a sealing resin having a resin side surface facing one side in a first direction. The conductive support member has: a root part extending from the resin side surface; a mounting part positioned on one side in the thickness direction from the root part; and an outer lead having an extension part connected to the root part via a bent part and connected to the mounting part via the bent part. The outer lead includes a first partition part including the extension part, a second partition part including the root part and connected to the first partition part, and a third partition part including the mounting part and connected to the first partition part. The dimension of the first partition part in a second direction is larger than the dimension of each of the second and third partition parts in the second direction. A partition boundary between the first partition part and the third partition part is located in the extension part.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Conventionally, one of various semiconductor devices is known, which is a semiconductor device manufactured using a lead frame. Patent Document 1 describes an example of such a semiconductor device. The semiconductor device described in this document includes a conductive support member, a semiconductor element, and an encapsulating resin. The conductive support member has a die pad and multiple outer leads. The semiconductor element is mounted on the die pad. The multiple outer leads are exposed from the encapsulating resin and are electrically connected to the semiconductor element. When manufacturing the semiconductor device, after forming the encapsulating resin, the dam bar of the lead frame is cut to separate the multiple outer leads, and the outer leads are bent by bending. The width of the cut portion of the dam bar in the outer lead is larger than the width of the remaining portion. The cut portion of the dam bar in the outer lead may become pointed due to the bending process, resulting in an unstable shape after processing.

[0003] Japanese Patent Application Laid-Open No. 2022-55599

[0004] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device suitable for improving the stability of the shape of outer leads after bending.

[0005] One aspect of the present disclosure provides a semiconductor device comprising: one or more semiconductor elements; a conductive support member; and a sealing resin having a first resin side surface facing one side in a first direction perpendicular to a thickness direction and covering the one or more semiconductor elements. The conductive support member includes one or more first outer leads, each having a first root portion extending from the first resin side surface in the first direction, a first mounting portion located on one side of the first root portion in the thickness direction, and a first extending portion connected to the first root portion via a first bend and to the first mounting portion via a second bend. The first outer leads include a first partition portion including the first extending portion, a second partition portion including the first root portion and connected to the first partition portion, and a third partition portion including the first mounting portion and connected to the first partition portion. A dimension of the first partition portion in the thickness direction and a second direction perpendicular to the first direction is greater than a dimension of the second partition portion in the second direction and a dimension of the third partition portion in the second direction. At least one of a first partition boundary, which is a boundary between the first partition portion and the second partition portion, and a second partition boundary, which is a boundary between the first partition portion and the third partition portion, is located in the first extension portion.

[0006] According to the above configuration, it is possible to improve the stability of the shape of the outer lead after bending.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view corresponding to FIG. 1 , seen through a sealing resin. FIG. 3 is a front view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a left side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a rear view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a right side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 2. FIG. 9 is an enlarged view of a main portion of a semiconductor device according to a first embodiment of the present disclosure, in which the upper part is an enlarged view of a portion of FIG. 1 and the lower part is an enlarged view of a portion of FIG. 3. FIG. 10 is an enlarged view of a main portion of a semiconductor device according to a first embodiment of the present disclosure, in which the upper part is an enlarged view of a portion of FIG. 1 and the lower part is an enlarged view of a portion of FIG. 3. FIG. 11 is a plan view showing a process during the manufacturing of a semiconductor device according to a first embodiment of the present disclosure. FIG. 12 is a plan view showing a semiconductor device according to a first modification of the first embodiment of the present disclosure. FIG. 13 is a plan view showing a semiconductor device according to a first modification of the first embodiment, seen through a sealing resin. FIG. 14 is a front view showing a semiconductor device according to a first modification of the first embodiment. FIG. 15 is a left side view showing a semiconductor device according to a first modification of the first embodiment. FIG. 16 is a rear view showing a semiconductor device according to a first modification of the first embodiment. FIG. 17 is a right side view showing a semiconductor device according to a first modification of the first embodiment. FIG. 18 is an enlarged view of a main part of a semiconductor device according to a first modification of the first embodiment, where the upper part is an enlarged view of a part of FIG. 12 and the lower part is an enlarged view of a part of FIG. 14. FIG. 19 is an enlarged view of a main part of a semiconductor device according to a first modification of the first embodiment, where the upper part is an enlarged view of a part of FIG. 12 and the lower part is an enlarged view of a part of FIG. 14.

[0009] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] First Embodiment: A semiconductor device A1 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 10 . The semiconductor device A1 of this embodiment includes two semiconductor elements 10, an insulating element 12, a conductive support member 2, multiple wires 31 to 34, and a sealing resin 5. Of these, the conductive support member 2 includes a die pad portion 21, multiple first outer leads 22, multiple second outer leads 23, multiple first inner leads 24, and multiple second inner leads 25. The specific use of the semiconductor device A1 is not limited in any way, but it may be surface-mounted on a wiring board of an inverter device for an electric vehicle or a hybrid vehicle, for example. The package format of the semiconductor device A1 is a small outline package (SOP). However, the package format of the semiconductor device A1 is not limited to SOP.

[0013] 1 and 2 are plan views showing the semiconductor device A1. FIG. 3 is a front view showing the semiconductor device A1. FIG. 4 is a left side view showing the semiconductor device A1. FIG. 5 is a rear view showing the semiconductor device A1. FIG. 6 is a right side view showing the semiconductor device A1. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 2. In FIGS. 9 and 10, the upper part is an enlarged view of a portion of FIG. 1, and the lower part is an enlarged view of a portion of FIG. 3. Note that FIG. 2 shows the sealing resin 5 through which light passes for ease of understanding. In FIG. 2, the transmitted sealing resin 5 is indicated by an imaginary line (two-dot chain line).

[0014] In the description of the semiconductor device A1, the thickness direction (direction in a plan view) of the die pad portion 21 (conductive support member 2) is referred to as the "thickness direction z." The direction perpendicular to the thickness direction z (the up-down direction in FIG. 1 ) is referred to as the "first direction x." The direction perpendicular to the thickness direction z and the first direction x (the left-right direction in FIG. 1 ) is referred to as the "second direction y." As shown in FIGS. 1 and 2 , the semiconductor device A1 has a substantially rectangular shape when viewed in the thickness direction z. Furthermore, for convenience, in the description of the semiconductor device A1, the lower side in FIGS. 1 and 2 is an example of "one side of the first direction" in the present disclosure and is referred to as the "x1 side of the first direction x," and the upper side in the drawings is an example of "the other side of the first direction" in the present disclosure and is referred to as the "x2 side of the first direction x." In FIGS. 1 and 2 , the right side in the drawings is referred to as the "y1 side of the second direction y," and the left side in the drawings is referred to as the "y2 side of the second direction y." 3 to 6, the lower side in the figure is an example of "one side in the thickness direction" in the present disclosure, and is referred to as the "z1 side in the thickness direction z," and the upper side in the figure is referred to as the "z2 side in the thickness direction z." In the following description, the z2 side in the thickness direction z may be referred to as the upper side, and the z1 side in the thickness direction z may be referred to as the lower side. Note that the terms "upper," "lower," "upper," "lower," "upper surface," and "lower surface" indicate the relative positional relationship of each component, etc. in the thickness direction z, and do not necessarily define the relationship with the direction of gravity.

[0015] The two semiconductor elements 10 and the insulating element 12 are elements that form the functional core of the semiconductor device A1. As shown in Figure 2, the two semiconductor elements 10 include a first semiconductor element 11 and a second semiconductor element 13. In the semiconductor device A1, the first semiconductor element 11, the second semiconductor element 13, and the insulating element 12 are each composed of individual elements. When viewed in the thickness direction z, the first semiconductor element 11, the second semiconductor element 13, and the insulating element 12 each have a rectangular shape with the longer side extending in the second direction y.

[0016] The first semiconductor element 11 is a controller (control element) of a gate driver that drives switching elements such as IGBTs, MOSFETs, etc. The first semiconductor element 11 has a circuit that converts a control signal input from an ECU or the like into a PWM control signal, a transmission circuit that transmits the PWM control signal to the second semiconductor element 13, and a reception circuit that receives an electrical signal from the second semiconductor element 13.

[0017] The second semiconductor element 13 is a gate driver (drive element) for driving the switching element. The second semiconductor element 13 has a receiving circuit for receiving a PWM control signal, a circuit for driving the switching element based on the PWM control signal, and a transmitting circuit for transmitting an electrical signal to the first semiconductor element 11. An example of the electrical signal is an output signal from a temperature sensor disposed near the motor.

[0018] The insulating element 12 is an element for transmitting PWM control signals and other electrical signals in an insulated state. In the semiconductor device A1, the insulating element 12 is of an inductive type. An insulating transformer is an example of an inductive type insulating element 12. An insulating transformer transmits electrical signals in an insulated state by inductively coupling two inductors (coils). The insulating element 12 has a substrate made of silicon. An inductor made of copper is formed on the substrate. The inductors include a transmitting inductor and a receiving inductor, and these inductors are stacked in the thickness direction z. A silicon dioxide (SiO ２A dielectric layer made of a material such as a dielectric film is interposed between the insulating element 12 and the receiving inductor. The dielectric layer electrically insulates the transmitting inductor from the receiving inductor. Alternatively, the insulating element 12 may be a capacitive type. An example of a capacitive type insulating element 12 is a capacitor. Furthermore, the insulating element 12 may be a photocoupler.

[0019] In semiconductor device A1, second semiconductor element 13 requires a power supply voltage higher than that required for first semiconductor element 11. This results in a significant potential difference between first semiconductor element 11 and second semiconductor element 13. Therefore, in semiconductor device A1, a first circuit including first semiconductor element 11 as a component and a second circuit including second semiconductor element 13 as a component are insulated from each other by insulating element 12. The first circuit and the second circuit have relatively different potentials. In semiconductor device A1, the second circuit has a higher potential than the first circuit. Furthermore, insulating element 12 relays signals between the first circuit and the second circuit. For example, in an inverter device for an electric vehicle or hybrid vehicle, the voltage applied to the ground of first semiconductor element 11 is approximately 0 V, while the voltage applied to the ground of second semiconductor element 13 may transiently reach 600 V or higher.

[0020] 2 and 7 , a plurality of electrodes 111 are provided on the upper surface of the first semiconductor element 11 (the surface facing the same direction as the mounting surface 211 of the die pad portion 21, which will be described later). The plurality of electrodes 111 are electrically connected to a circuit configured in the first semiconductor element 11. Similarly, a plurality of electrodes 131 are provided on the upper surface of the second semiconductor element 13 (the surface facing the same direction as the mounting surface 211, which will be described later). The plurality of electrodes 131 are electrically connected to a circuit configured in the second semiconductor element 13.

[0021] 2 and 7 , the insulating element 12 is positioned between the first semiconductor element 11 and the second semiconductor element 13 in the second direction y. A plurality of first electrodes 121 and a plurality of second electrodes 122 are provided on the upper surface of the insulating element 12 (the surface facing the same direction as the mounting surface 211 described above). Each of the plurality of first electrodes 121 and the plurality of second electrodes 122 is electrically connected to either the transmitting inductor or the receiving inductor. The plurality of first electrodes 121 are arranged along the first direction x and are positioned closer to the first semiconductor element 11 than the second semiconductor element 13 in the second direction y. The plurality of second electrodes 122 are arranged along the first direction x and are positioned closer to the second semiconductor element 13 than the first semiconductor element 11 in the second direction y.

[0022] In the semiconductor device A1, the conductive support member 2 is a member that forms conductive paths between the first semiconductor element 11, the second semiconductor element 13, and the insulating element 12 and the wiring board of the inverter device. The conductive support member 2 is made of, for example, an alloy containing copper (Cu). The conductive support member 2 is formed from a lead frame 81 described below. The first semiconductor element 11, the insulating element 12, and the second semiconductor element 13 are mounted on the conductive support member 2. As shown in FIGS. 1 and 2 , the conductive support member 2 includes a die pad portion 21, a plurality of first outer leads 22, a plurality of second outer leads 23, a plurality of first inner leads 24, and a plurality of second inner leads 25. If necessary, a plating layer made of silver (Ag), nickel (Ni), gold (Au), or the like may be provided at appropriate locations on the conductive support member 2.

[0023] A first semiconductor element 11, a second semiconductor element 13, and an insulating element 12 are mounted on the die pad portion 21. In this embodiment, the die pad portion 21 has a first die pad 21A and a second die pad 21B. The first die pad 21A is disposed on the x1 side of the first direction x. The second die pad 21B is disposed on the x2 side of the first direction x. The first die pad 21A and the second die pad 21B are spaced apart from each other in the first direction x. In the semiconductor device A1, the first semiconductor element 11 and the insulating element 12 are mounted on the first die pad 21A, and the second semiconductor element 13 is mounted on the second die pad 21B.

[0024] The die pad portion 21 (the first die pad 21A and the second die pad 21B) is covered with sealing resin 5. The die pad portion 21 (each of the first die pad 21A and the second die pad 21B) has a mounting surface 211 facing the z2 side in the thickness direction z. The first semiconductor element 11 and the insulating element 12 are mounted on the mounting surface 211 of the first die pad 21A. The second semiconductor element 13 is mounted on the mounting surface 211 of the second die pad 21B. Each of the first semiconductor element 11, the second semiconductor element 13, and the insulating element 12 is bonded to either the mounting surface 211 of the first die pad 21A or the mounting surface 211 of the second die pad 21B via a conductive bonding material (such as solder or metal paste) not shown. The thickness of the first die pad 21A and the second die pad 21B (die pad portion 21) is, for example, not less than 100 μm and not more than 300 μm.

[0025] 2 and 7 , a plurality of through holes 212 are formed in the first die pad 21A. Each of the plurality of through holes 212 penetrates the first die pad 21A in the thickness direction z and extends along the second direction y. When viewed in the thickness direction z, at least one of the plurality of through holes 212 is located between the first semiconductor element 11 and the insulating element 12. The plurality of through holes 212 are arranged along the second direction y.

[0026] The multiple first outer leads 22 are bonded to a wiring board such as an inverter device to form a conductive path between the semiconductor device A1 and the wiring board. At least one of the multiple first outer leads 22 is electrically connected to the first semiconductor element 11. As shown in FIGS. 1, 2, and 4, the multiple first outer leads 22 are arranged at intervals in the second direction y. The multiple first outer leads 22 are exposed from the sealing resin 5 (first resin side surface 53 described below) so as to extend toward the x1 side in the first direction x. As shown in FIGS. 1, 3, and 5, the multiple first outer leads 22 overlap each other when viewed in the second direction y. The multiple first outer leads 22 include a one-end first outer lead 22A, an other-end first outer lead 22B, and multiple intermediate first outer leads 22C. The one-end first outer lead 22A is located at the end of the multiple first outer leads 22 on the y1 side in the second direction y. The other-end first outer lead 22B is located at the end on the y2 side in the second direction y of the multiple first outer leads 22. The multiple intermediate first outer leads 22C are arranged between the one-end first outer lead 22A and the other-end first outer lead 22B, as shown in FIGS.

[0027] Each of the multiple first outer leads 22 (one end side first outer lead 22A, the other end side first outer lead 22B and multiple intermediate first outer leads 22C) has a first root portion 221, a first mounting portion 222, a first extension portion 223, a first bent portion 224 and a second bent portion 225.

[0028] 1 and 2 , the first root portion 221 is located at the end of the first outer lead 22 that is closer to the sealing resin 5 in the first direction x. Therefore, the first root portion 221, the first mounting portion 222, and the first extending portion 223 are also located closer to the sealing resin 5 in the first direction x. The first root portion 221 is located higher in the thickness direction z than the first mounting portion 222 (on the z2 side in the thickness direction z), and protrudes from the center of the sealing resin 5 in the thickness direction z.

[0029] The first mounting portion 222 is a tip portion of the first outer lead 22. The first mounting portion 222 is a portion that is bonded to a circuit board when the semiconductor device A1 is mounted on the circuit board. As shown in FIGS. 1 and 2 , the first mounting portion 222 is located at the end opposite the sealing resin 5 in the first direction x. Therefore, the first mounting portion 222 is located farther from the sealing resin 5 in the first direction x than the first root portion 221 and the first extending portion 223. The first mounting portion 222 is located lower in the thickness direction z than the first root portion 221 (on the z1 side in the thickness direction z).

[0030] The first extending portion 223 is connected to the first root portion 221 via a first bent portion 224 and to the first mounting portion 222 via a second bent portion 225. When viewed in the second direction y, the first extending portion 223 is inclined with respect to the first root portion 221 and the first mounting portion 222. When viewed in the second direction y, the first extending portion 223 is also inclined with respect to the thickness direction z.

[0031] The first bent portion 224 is interposed between the first root portion 221 and the first extending portion 223. The first bent portion 224 bends downward in the thickness direction z from the first root portion 221. The second bent portion 225 is interposed between the first mounting portion 222 and the first extending portion 223. The second bent portion 225 bends upward in the thickness direction z from the first mounting portion 222. The first bent portion 224 and the second bent portion 225 are each curved when viewed in the second direction y.

[0032] As shown in FIG. 9 , the first outer lead 22 includes a first partition 226, a second partition 227, and a third partition 228. The first partition 226 includes a first extending portion 223. The second partition 227 includes a first root portion 221 and is connected to the first partition 226. The third partition 228 includes a first mounting portion 222 and is connected to the first partition 226. The dimension w1 in the second direction y of the first partition 226 is greater than the dimension w2 in the second direction y of the second partition 227 and the dimension w3 in the second direction y of the third partition 228. The first partition 226 corresponds to a dam bar 816 of the lead frame 81 (described later) and is wider than other portions by cutting the dam bar 816. In FIG. 9 , the first partition 226 is hatched.

[0033] As can be seen from FIG. 9 , in this embodiment, a first partition boundary 226a, which is the boundary between the first partition portion 226 and the second partition portion 227, is located in the first root portion 221. A second partition boundary 226b, which is the boundary between the first partition portion 226 and the third partition portion 228, is located in the first extending portion 223. As viewed in the second direction y, the distance (first distance d1) between a first boundary 2201, which is the boundary between the first bent portion 224 and the first extending portion 223, and the second partition boundary 226b is, for example, 0.01 mm or more and 1.0 mm or less, and preferably 0.01 mm or more and 0.05 mm or less. Furthermore, the first distance d1 between the first boundary 2201 and the second partition boundary 226b is 1 / 20 times or more and 1 / 2 times or less, and preferably 1 / 10 times or more and 1 / 4 times or less, of the dimension t1 of the first root portion 221 in the thickness direction z.

[0034] The multiple first inner leads 24 are covered with the sealing resin 5. The first inner leads 24 extend inward from each of the multiple first outer leads 22 into the sealing resin 5. The multiple first inner leads 24 include a one end side first inner lead 24A, an other end side first inner lead 24B, and multiple intermediate first inner leads 24C.

[0035] The one-end first inner lead 24A is connected to an end of the one-end first outer lead 22A on the x2 side in the first direction x. An end of the one-end first inner lead 24A opposite the one-end first outer lead 22A is connected to the first die pad 21A. The other-end first inner lead 24B is connected to an end of the other-end first outer lead 22B on the x2 side in the first direction x. An end of the other-end first inner lead 24B opposite the other-end first outer lead 22B is connected to the first die pad 21A. Each of the multiple intermediate first inner leads 24C is connected to an end of one of the multiple intermediate first outer leads 22C on the x2 side in the first direction x, and extends close to the first die pad 21A.

[0036] The second outer leads 23 are bonded to a wiring board such as an inverter device to form a conductive path between the semiconductor device A1 and the wiring board. At least one of the second outer leads 23 is electrically connected to the second semiconductor element 13. As shown in FIGS. 1, 2, and 6, the second outer leads 23 are arranged at intervals in the second direction y. The second outer leads 23 are exposed from the sealing resin 5 (a second resin side surface 54 described below) so as to extend toward the x2 side in the first direction x. As shown in FIGS. 1, 3, and 5, the second outer leads 23 overlap each other when viewed in the second direction y. The second outer leads 23 include a first-end second outer lead 23A, an second-end second outer lead 23B, and a plurality of intermediate second outer leads 23C. The first-end second outer lead 23A is located at the end of the second outer leads 23 on the y1 side in the second direction y. The other-end second outer lead 23B is located at the end on the y2 side in the second direction y of the multiple second outer leads 23. The multiple intermediate second outer leads 23C are arranged between the one-end second outer lead 23A and the other-end second outer lead 23B, as shown in FIGS.

[0037] Each of the multiple second outer leads 23 (one end side second outer lead 23A, the other end side second outer lead 23B and multiple intermediate second outer leads 23C) has a second root portion 231, a second mounting portion 232, a second extension portion 233, a third bend portion 234 and a fourth bend portion 235.

[0038] The second root portion 231 is a root portion of the second outer lead 23. As shown in FIGS. 1 and 2 , the second root portion 231 is located at the end of the second outer lead 23 that is closer to the sealing resin 5 in the first direction x. Therefore, the second root portion 231, the second mounting portion 232, and the second extending portion 233 are also located closer to the sealing resin 5 in the first direction x. The second root portion 231 is located higher in the thickness direction z (on the z2 side in the thickness direction z) than the second mounting portion 232, and protrudes from the center of the sealing resin 5 in the thickness direction z.

[0039] The second mounting portion 232 is a tip portion of the second outer lead 23. The second mounting portion 232 is a portion that is joined to a circuit board when the semiconductor device A1 is mounted on the circuit board. As shown in FIGS. 1 and 2 , the second mounting portion 232 is located at the end opposite the sealing resin 5 in the first direction x. Therefore, the second mounting portion 232 is located farther from the sealing resin 5 in the first direction x than the second root portion 231 and the second extending portion 233. The second mounting portion 232 is located lower in the thickness direction z than the second root portion 231 (on the z1 side in the thickness direction z).

[0040] The second extending portion 233 is connected to the second root portion 231 via a third bend 234 and to the second mounting portion 232 via a fourth bend 235. The second extending portion 233 is inclined with respect to the second root portion 231 when viewed in the second direction y. Furthermore, the second extending portion 233 is inclined with respect to the thickness direction z when viewed in the second direction y.

[0041] The third bent portion 234 is interposed between the second root portion 231 and the second extending portion 233. The third bent portion 234 bends downward in the thickness direction z from the second root portion 231. The fourth bent portion 235 is interposed between the second mounting portion 232 and the second extending portion 233. The fourth bent portion 235 bends upward in the thickness direction z from the second mounting portion 232. The third bent portion 234 and the fourth bent portion 235 are each curved when viewed in the second direction y.

[0042] As shown in FIG. 10 , the second outer lead 23 includes a fourth partition 236, a fifth partition 237, and a sixth partition 238. The fourth partition 236 includes a second extending portion 233. The fifth partition 237 includes a second root portion 231 and is connected to the fourth partition 236. The sixth partition 238 includes a second mounting portion 232 and is connected to the fourth partition 236. The dimension w4 in the second direction y of the fourth partition 236 is greater than the dimension w5 in the second direction y of the fifth partition 237 and the dimension w6 in the second direction y of the sixth partition 238. The fourth partition 236 corresponds to a dam bar 816 of the lead frame 81 (described later) and is wider than other portions by cutting the dam bar 816. In FIG. 10 , the fourth partition 236 is hatched.

[0043] As can be seen from FIG. 10 , in this embodiment, a third partition boundary 236a, which is the boundary between the fourth partition portion 236 and the fifth partition portion 237, is located in the second root portion 231. A fourth partition boundary 236b, which is the boundary between the fourth partition portion 236 and the sixth partition portion 238, is located in the second extending portion 233. As viewed in the second direction y, the distance (second distance d2) between a second boundary 2301, which is the boundary between the third bent portion 234 and the second extending portion 233, and the fourth partition boundary 236b is, for example, 0.01 mm or more and 1.0 mm or less, and preferably 0.01 mm or more and 0.05 mm or less. Furthermore, the second distance d2 between the second boundary 2301 and the fourth partition boundary 236b is 1 / 20 times or more and 1 / 2 times or less, and preferably 1 / 10 times or more and 1 / 4 times or less, of the dimension t2 of the second root portion 231 in the thickness direction z.

[0044] The multiple second inner leads 25 are covered with the sealing resin 5. The second inner leads 25 extend inward from each of the multiple second outer leads 23 into the sealing resin 5. The multiple second inner leads 25 include a one end side second inner lead 25A, an other end side second inner lead 25B, and multiple intermediate second inner leads 25C.

[0045] The one-end second inner lead 25A is connected to an end of the one-end second outer lead 23A on the x1 side in the first direction x. An end of the one-end second inner lead 25A opposite the one-end second outer lead 23A is connected to the second die pad 21B. The other-end second inner lead 25B is connected to an end of the other-end second outer lead 23B on the x1 side in the first direction x. An end of the other-end second inner lead 25B opposite the other-end second outer lead 23B is connected to the second die pad 21B. Each of the multiple intermediate second inner leads 25C is connected to an end of one of the multiple intermediate second outer leads 23C on the x1 side in the first direction x, and extends close to the second die pad 21B.

[0046] The plurality of wires 31 to 34, together with the die pad portion 21 (first die pad 21A and second die pad 21B), the plurality of first outer leads 22, the plurality of second outer leads 23, the plurality of first inner leads 24, and the plurality of second inner leads 25, respectively constitute conductive paths that enable the first semiconductor element 11, the second semiconductor element 13, and the insulating element 12 to perform predetermined functions. The composition of the plurality of wires 31 to 34 includes, for example, gold (Au). Alternatively, the composition of these wires may include copper or aluminum (Al).

[0047] 2 and 7, each of the plurality of wires 31 is connected to one of the plurality of first electrodes 121 of the insulating element 12 and one of the plurality of electrodes 111 of the first semiconductor element 11. This establishes electrical conduction between the first semiconductor element 11 and the insulating element 12. The plurality of wires 31 are arranged along the second direction y.

[0048] 2 and 7 , each of the plurality of wires 32 is connected to one of the plurality of electrodes 111 of the first semiconductor element 11 and to one of the one-end first inner lead 24A, the other-end first inner lead 24B, and the plurality of intermediate first inner leads 24C. As a result, at least one of the one-end first inner lead 24A, the other-end first inner lead 24B, and the plurality of intermediate first inner leads 24C is electrically connected to the first semiconductor element 11.

[0049] 2 and 7 , each of the plurality of wires 33 is connected to one of the plurality of second electrodes 122 of the insulating element 12 and one of the plurality of electrodes 131 of the second semiconductor element 13. This establishes mutual conduction between the second semiconductor element 13 and the insulating element 12. The plurality of wires 33 are arranged along the second direction y. In the semiconductor device A1, the plurality of wires 33 straddle the first die pad 21A and the second die pad 21B.

[0050] 2 and 7 , each of the plurality of wires 34 is connected to one of the plurality of electrodes 131 of the second semiconductor element 13 and to one of the one-end second inner lead 25A, the other-end second inner lead 25B, and the plurality of intermediate second inner leads 25C. As a result, at least one of the one-end second inner lead 25A, the other-end second inner lead 25B, and the plurality of intermediate second inner leads 25C is electrically connected to the second semiconductor element 13.

[0051] As shown in FIGS. 1 and 2 , the sealing resin 5 covers the first semiconductor element 11, the second semiconductor element 13, the insulating element 12, the die pad portion 21 (the first die pad 21A and the second die pad 21B), the first inner leads 24, and the second inner leads 25. Furthermore, as shown in FIG. 7 , the sealing resin 5 covers the wires 31 to 34. The sealing resin 5 has electrical insulation properties. The sealing resin 5 insulates the first die pad 21A and the second die pad 21B from each other. The sealing resin 5 is made of a material containing, for example, black epoxy resin. When viewed in the thickness direction z, the sealing resin 5 is rectangular.

[0052] As shown in FIGS. 3 to 6, the sealing resin 5 has a resin main surface 51, a resin rear surface 52, a first resin side surface 53, a second resin side surface 54, a third resin side surface 55, and a fourth resin side surface 56.

[0053] 3 to 6, the resin main surface 51 and the resin back surface 52 are located apart from each other in the thickness direction z. The resin main surface 51 and the resin back surface 52 face opposite each other in the thickness direction z. The resin main surface 51 faces the z2 side in the thickness direction z, and the resin back surface 52 faces the z1 side in the thickness direction z. Each of the resin main surface 51 and the resin back surface 52 is substantially flat.

[0054] As shown in FIGS. 3 to 6 , the first resin side surface 53, the second resin side surface 54, the third resin side surface 55, and the fourth resin side surface 56 are connected to the resin main surface 51 and the resin back surface 52, respectively, and are sandwiched between the resin main surface 51 and the resin back surface 52 in the thickness direction z. As shown in FIGS. 1 , 3 , and 5 , the first resin side surface 53 is located on the x1 side of the first direction x and faces the x1 side of the first direction x. A plurality of first outer leads 22 protrude from the first resin side surface 53. The second resin side surface 54 is located on the x2 side of the first direction x and faces the x2 side of the first direction x. A plurality of second outer leads 23 protrude from the second resin side surface 54. The third resin side surface 55 and the fourth resin side surface 56 are located apart from each other in the second direction y and are connected to the first resin side surface 53 and the second resin side surface 54. 1, 4, and 6, the third resin side surface 55 is located on the y1 side in the second direction y and faces the y1 side in the second direction y. The fourth resin side surface 56 is located on the y2 side in the second direction y and faces the y2 side in the second direction y.

[0055] As shown in FIGS. 3 to 5 , the first resin side surface 53 includes a first upper portion 531, a first lower portion 532, and a first intermediate portion 533. The first upper portion 531 is connected to the resin main surface 51 on the z2 side in the thickness direction z and connected to the first intermediate portion 533 on the z1 side in the thickness direction z. The first upper portion 531 is inclined with respect to the resin main surface 51. The first lower portion 532 is connected to the resin back surface 52 on the z1 side in the thickness direction z and connected to the first intermediate portion 533 on the z2 side in the thickness direction z. The first lower portion 532 is inclined with respect to the resin back surface 52. The first intermediate portion 533 is connected to the first upper portion 531 on the z2 side in the thickness direction z and connected to the first lower portion 532 on the z1 side in the thickness direction z. The in-plane directions of the first intermediate portion 533 are the thickness direction z and the second direction y. When viewed in the thickness direction z, the first intermediate portion 533 is located outward from the resin main surface 51 and the resin rear surface 52. From the first intermediate portion 533, a plurality of first outer leads 22 are exposed.

[0056] As shown in FIGS. 3 , 5 , and 6 , the second resin side surface 54 includes a second upper portion 541, a second lower portion 542, and a second intermediate portion 543. The second upper portion 541 is connected to the resin main surface 51 on the z2 side in the thickness direction z and connected to the second intermediate portion 543 on the z1 side in the thickness direction z. The second upper portion 541 is inclined with respect to the resin main surface 51. The second lower portion 542 is connected to the resin back surface 52 on the z1 side in the thickness direction z and connected to the second intermediate portion 543 on the z2 side in the thickness direction z. The second lower portion 542 is inclined with respect to the resin back surface 52. The second intermediate portion 543 is connected to the second upper portion 541 on the z2 side in the thickness direction z and connected to the second lower portion 542 on the z1 side in the thickness direction z. The in-plane directions of the second intermediate portion 543 are the thickness direction z and the second direction y. When viewed in the thickness direction z, the second intermediate portion 543 is located outward from the resin main surface 51 and the resin rear surface 52. From the second intermediate portion 543, a plurality of second outer leads 23 are exposed.

[0057] As shown in FIGS. 3 , 4 , and 6 , the third resin side surface 55 includes a third upper portion 551, a third lower portion 552, and a third intermediate portion 553. The third upper portion 551 is connected to the resin main surface 51 on the z2 side in the thickness direction z and connected to the third intermediate portion 553 on the z1 side in the thickness direction z. The third upper portion 551 is inclined with respect to the resin main surface 51. The third lower portion 552 is connected to the resin back surface 52 on the z1 side in the thickness direction z and connected to the third intermediate portion 553 on the z2 side in the thickness direction z. The third lower portion 552 is inclined with respect to the resin back surface 52. The third intermediate portion 553 is connected to the third upper portion 551 on the z2 side in the thickness direction z and connected to the third lower portion 552 on the z1 side in the thickness direction z. The in-plane directions of the third intermediate portion 553 are the thickness direction z and the first direction x. When viewed in the thickness direction z, the third intermediate portion 553 is located outward from the resin main surface 51 and the resin back surface 52 .

[0058] As shown in FIGS. 4 to 6 , the fourth resin side surface 56 includes a fourth upper portion 561, a fourth lower portion 562, and a fourth intermediate portion 563. The z2 side of the fourth upper portion 561 in the thickness direction z is connected to the resin main surface 51, and the z1 side of the fourth upper portion 561 in the thickness direction z is connected to the fourth intermediate portion 563. The fourth upper portion 561 is inclined with respect to the resin main surface 51. The z1 side of the fourth lower portion 562 in the thickness direction z is connected to the resin back surface 52, and the z2 side of the fourth lower portion 562 in the thickness direction z is connected to the fourth intermediate portion 563. The fourth lower portion 562 is inclined with respect to the resin back surface 52. The z2 side of the fourth intermediate portion 563 in the thickness direction z is connected to the fourth upper portion 561, and the z1 side of the fourth intermediate portion 563 in the thickness direction z is connected to the fourth lower portion 562. The in-plane directions of the fourth intermediate portion 563 are the thickness direction z and the first direction x. When viewed in the thickness direction z, the fourth intermediate portion 563 is located outward from the resin main surface 51 and the resin back surface 52 .

[0059] A motor driver circuit in an inverter device typically includes a half-bridge circuit including a low-side (low potential side) switching element and a high-side (high potential side) switching element. The following description focuses on the case where these switching elements are MOSFETs. In the low-side switching element, the reference potentials of the source of the switching element and the gate driver driving the switching element are both ground. In the high-side switching element, the reference potentials of the source of the switching element and the gate driver driving the switching element are both equivalent to the potential at the output node of the half-bridge circuit. The potential at the output node changes depending on the driving of the high-side and low-side switching elements, so the reference potential of the gate driver driving the high-side switching element also changes. When the high-side switching element is on, the reference potential is equivalent to the voltage applied to the drain of the high-side switching element (e.g., 600 V or higher). In the semiconductor device A1, the ground of the first semiconductor element 11 and the ground of the second semiconductor element 13 are separated. Therefore, when the semiconductor device A1 is used as a gate driver for driving a high-side switching element, a voltage equivalent to the voltage applied to the drain of the high-side switching element is transiently applied to the ground of the second semiconductor element 13.

[0060] Next, the manufacture of the semiconductor device A1 will be described with reference to FIG. 11 . FIG. 11 is a plan view showing one step in the manufacture of the semiconductor device. The lead frame 81 is a plate-shaped material that constitutes the conductive support member 2. In this embodiment, the base material of the lead frame 81 is copper. The lead frame 81 may be formed by etching a metal plate or by punching a metal plate. The lead frame 81 includes an outer frame 811, a first die pad 812A, a second die pad 812B, a plurality of first leads 813, a plurality of second leads 814, a plurality of support leads 815, and a dam bar 816.

[0061] The first die pad 812A is a portion that will later become the first die pad 21A. The second die pad 812B is a portion that will later become the second die pad 21B. The multiple first leads 813 are portions that will later become the multiple intermediate first outer leads 22C and multiple intermediate first inner leads 24C. The multiple second leads 814 are portions that will later become the multiple intermediate second outer leads 23C and multiple intermediate second inner leads 25C. The multiple support leads 815 are portions that will later become the one-end first outer lead 22A, the one-end first inner lead 24A, the other-end first outer lead 22B, the other-end first inner lead 24B, the one-end second outer lead 23A, the one-end second inner lead 25A, the other-end second outer lead 23B, and the other-end second inner lead 25B. The plurality of first leads 813 and the plurality of support leads 815, as well as the plurality of second leads 814 and the plurality of support leads 815, are connected to one another by a dam bar 816. After the formation of the sealing resin 5, the plurality of first leads 813, the plurality of second leads 814, and the plurality of support leads 815 that were connected to one another by the dam bar 816 are appropriately separated by cutting a portion of the dam bar 816. The cut portion of the dam bar 816 in the first outer lead 22 and the second outer lead 23 becomes a first partition 226 and a fourth partition 236 that have a width (dimension in the second direction y) larger than the other portions. Thereafter, the plurality of first outer leads 22 and the plurality of second outer leads 23 are subjected to a bending process. This results in the formation of a plurality of first outer leads 22 having a first root portion 221, a first mounting portion 222, a first extension portion 223, a first bend portion 224 and a second bend portion 225, and a plurality of second outer leads 23 having a second root portion 231, a second mounting portion 232, a second extension portion 233, a third bend portion 234 and a fourth bend portion 235.

[0062] Next, the effects of the semiconductor device A1 will be described.

[0063] Each first outer lead 22 has a first root portion 221, a first mounting portion 222, a first extending portion 223, a first bent portion 224, and a second bent portion 225. Each first outer lead 22 also includes a first partition portion 226, a second partition portion 227, and a third partition portion 228. The first partition portion 226 includes the first extending portion 223. The second partition portion 227 is connected to the first partition portion 226 and includes the first root portion 221. The third partition portion 228 is connected to the first partition portion 226 and includes the first mounting portion 222. A dimension w1 in the second direction y of the first partition portion 226 is greater than a dimension w2 in the second direction y of the second partition portion 227 and a dimension w3 in the second direction y of the third partition portion 228. The second partition boundary 226b, which is the boundary between the first partition 226 and the third partition 228, is located in the first extending portion 223. When the first outer lead 22 is formed by bending, a large tensile force or compressive force acts locally on the bent portion that becomes the first bent portion 224. If this bent portion includes a portion where the cross-sectional shape changes, for example, this may result in an unstable shape, such as the formation of a sharp portion, after processing. In this embodiment, as described above, the boundary (second partition boundary 226b) between the first partition 226, which has a large width (dimension in the second direction y), and the third partition 228, which is connected to it and has a small width (dimension in the second direction y), is located in the first extending portion 223, avoiding the first bent portion 224. In this way, by setting the second partition boundary 226b of the portions having different widths (dimension in the second direction y) at a position that avoids the first bent portion 224, it is possible to stabilize the shape of the first bent portion 224 (first outer lead 22) after bending processing.

[0064] In the semiconductor device A1, a first partition boundary 226a, which is the boundary between the first partition portion 226 and the second partition portion 227, is located in the first root portion 221. The boundaries (first partition boundary 226a and second partition boundary 226b) between the first partition portion 226 and the adjacent second and third partition portions 227 and 228 on both sides thereof are provided at positions that avoid the first bent portion 224. This configuration is more preferable in terms of stabilizing the shape of the first bent portion 224 (first outer lead 22) after bending.

[0065] In this embodiment, the distance (first distance d1) between the first boundary 2201, which is the boundary between the first bent portion 224 and the first extending portion 223, and the second partition boundary 226b, as viewed in the second direction y, is 0.01 mm or more and 1.0 mm or less. Furthermore, the first distance d1 between the first boundary 2201 and the second partition boundary 226b is 1 / 20 times or more and 1 / 2 times or less the dimension t1 of the first base portion 221 in the thickness direction z. This configuration ensures an appropriate first distance d1 between the second partition boundary 226b and the first boundary 2201. This is more suitable for stabilizing the shape of the first bent portion 224 (first outer lead 22) after bending.

[0066] Each second outer lead 23 has a second root portion 231, a second mounting portion 232, a second extending portion 233, a third bent portion 234, and a fourth bent portion 235. Each second outer lead 23 also includes a fourth partition portion 236, a fifth partition portion 237, and a sixth partition portion 238. The fourth partition portion 236 includes the second extending portion 233. The fifth partition portion 237 is connected to the fourth partition portion 236 and includes the second root portion 231. The sixth partition portion 238 is connected to the fourth partition portion 236 and includes the second mounting portion 232. A dimension w4 in the second direction y of the fourth partition portion 236 is greater than a dimension w5 in the second direction y of the fifth partition portion 237 and a dimension w6 in the second direction y of the sixth partition portion 238. A fourth partition boundary 236b, which is the boundary between the fourth partition 236 and the sixth partition 238, is located in the second extending portion 233. When the second outer lead 23 is formed by bending, a large tensile force or compressive force acts locally on the bent portion that becomes the third bent portion 234. If this bent portion includes a portion where the cross-sectional shape changes, for example, this may result in an unstable shape, such as the formation of a sharp portion after processing. In this embodiment, as described above, the boundary (fourth partition boundary 236b) between the fourth partition 236, which has a large width (dimension in the second direction y), and the sixth partition 238, which is connected to it and has a small width (dimension in the second direction y), is located in the second extending portion 233 and avoids the third bent portion 234. In this way, by setting the fourth partition boundary 236b of the portions having different widths (dimension in the second direction y) at a position that avoids the third bend portion 234, it is possible to stabilize the shape of the third bend portion 234 (second outer lead 23) after bending processing.

[0067] In the semiconductor device A1, the third partition boundary 236a, which is the boundary between the fourth partition portion 236 and the fifth partition portion 237, is located in the second root portion 231. The boundaries (third partition boundary 236a and fourth partition boundary 236b) between the fourth partition portion 236 and the adjacent fifth partition portion 237 and sixth partition portion 238 on both sides thereof are located at positions that avoid the third bent portion 234. This configuration is more preferable in terms of stabilizing the shape of the third bent portion 234 (second outer lead 23) after bending.

[0068] In this embodiment, the distance (second distance d2) between the second boundary 2301, which is the boundary between the third bent portion 234 and the second extending portion 233, and the fourth section boundary 236b, as viewed in the second direction y, is 0.01 mm or more and 1.0 mm or less. Furthermore, the second distance d2 between the second boundary 2301 and the fourth section boundary 236b is 1 / 20 times or more and 1 / 2 times or less the dimension t2 of the second base portion 231 in the thickness direction z. This configuration ensures an appropriate second distance d2 between the fourth section boundary 236b and the second boundary 2301. This is more suitable for stabilizing the shape of the third bent portion 234 (second outer lead 23) after bending.

[0069] First Modification of First Embodiment: FIGS. 12 to 19 show a semiconductor device according to a first modification of the first embodiment. FIGS. 12 and 13 are plan views showing a semiconductor device A11 according to this modification. FIG. 14 is a front view showing the semiconductor device A11. FIG. 15 is a left side view showing the semiconductor device A11. FIG. 16 is a rear view showing the semiconductor device A11. FIG. 17 is a right side view showing the semiconductor device A11. In FIGS. 18 and 19, the upper part is a partial enlarged view of FIG. 12, and the lower part is a partial enlarged view of FIG. 14. Note that for ease of understanding, FIG. 13 shows the sealing resin 5 in a transparent manner. In FIG. 13, the transparent sealing resin 5 is indicated by an imaginary line (two-dot chain line). Note that in FIG. 12 and subsequent figures, elements that are the same as or similar to those in the semiconductor device A1 of the above embodiment are designated by the same reference numerals as those in the above embodiment, and descriptions thereof will be omitted where appropriate.

[0070] In the semiconductor device A11 of this modification, the arrangement of the first partition portion 226 in the first outer lead 22 and the arrangement of the fourth partition portion 236 in the second outer lead 23 differ from those of the semiconductor device A1 of the above embodiment.

[0071] 18 , the entire first partition portion 226 is provided on the first extending portion 223. As a result, both the boundary between the first partition portion 226 and the second partition portion 227 (first partition boundary 226a) and the boundary between the first partition portion 226 and the third partition portion 228 (second partition boundary 226b) are located on the first extending portion 223. As viewed in the second direction y, the distance (third distance d3) between the first boundary 2201, which is the boundary between the first bent portion 224 and the first extending portion 223, and the first partition boundary 226a is, for example, 0.01 mm or more and 1.0 mm or less, and preferably 0.01 mm or more and 0.05 mm or less. 18, the third distance d3 between the first boundary 2201 and the first partition boundary 226a is 1 / 20 to 1 / 2 times, and preferably 1 / 10 to 1 / 4 times, the dimension t1 in the thickness direction z of the first base portion 221. Note that the first partition portion 226 is hatched.

[0072] 19 , the entire fourth partition portion 236 is provided on the second extending portion 233. As a result, both the boundary between the fourth partition portion 236 and the fifth partition portion 237 (third partition boundary 236a) and the boundary between the fourth partition portion 236 and the sixth partition portion 238 (fourth partition boundary 236b) are located on the second extending portion 233. As viewed in the second direction y, the distance (fourth distance d4) between the second boundary 2301, which is the boundary between the third bend portion 234 and the second extending portion 233, and the third partition boundary 236a is, for example, 0.01 mm or more and 1.0 mm or less, and preferably 0.01 mm or more and 0.05 mm or less. 19, the fourth distance d4 between the second boundary 2301 and the third partition boundary 236a is 1 / 20 to 1 / 2 times, and preferably 1 / 10 to 1 / 4 times, the dimension t2 in the thickness direction z of the second base portion 231. Note that the fourth partition 236 is hatched.

[0073] In the first outer lead 22 of this modified example, the boundaries (first partition boundary 226a and second partition boundary 226b) between the first partition portion 226 having a large width (dimension in the second direction y) and the second partition portion 227 and third partition portion 228 connected thereto and having a small width (dimension in the second direction y) are located in the first extending portion 223 and in positions that avoid the first bent portion 224. By setting the first partition boundary 226a and the second partition boundary 226b, which are in portions having different widths (dimension in the second direction y), in positions that avoid the first bent portion 224 in this way, it is possible to stabilize the shape of the first bent portion 224 (first outer lead 22) after bending.

[0074] In the semiconductor device A11, the first partition boundary 226a and the second partition boundary 226b are located in the first extending portion 223 and are provided at positions that avoid the first bent portion 224. This configuration is more preferable in terms of stabilizing the shape of the first bent portion 224 (first outer lead 22) after bending.

[0075] In this modification, the distance (third distance d3) between the first boundary 2201, which is the boundary between the first bent portion 224 and the first extending portion 223, and the first partition boundary 226a, as viewed in the second direction y, is 0.01 mm or more and 1.0 mm or less. The third distance d3 between the first boundary 2201 and the first partition boundary 226a is 1 / 20 times or more and 1 / 2 times or less the dimension t1 of the first base portion 221 in the thickness direction z. This configuration ensures an appropriate third distance d3 between the first partition boundary 226a and the first boundary 2201. This is more suitable for stabilizing the shape of the first bent portion 224 (first outer lead 22) after bending.

[0076] In the second outer lead 23 of this modification, the boundaries (third partition boundary 236a and fourth partition boundary 236b) between the fourth partition portion 236 having a large width (dimension in the second direction y) and the fifth partition portion 237 and sixth partition portion 238 connected thereto and having small widths (dimension in the second direction y) are located in the second extending portion 233 and in positions that avoid the third bent portion 234. By setting the third partition boundary 236a and the fourth partition boundary 236b, which are different in width (dimension in the second direction y), in positions that avoid the third bent portion 234 in this way, the shape of the third bent portion 234 (second outer lead 23) can be stabilized after bending.

[0077] In the semiconductor device A11, the third partition boundary 236a and the fourth partition boundary 236b are located in the second extending portion 233 and are provided at positions that avoid the third bent portion 234. This configuration is more preferable in terms of stabilizing the shape of the third bent portion 234 (second outer lead 23) after bending.

[0078] In this modification, the distance (fourth distance d4) between the second boundary 2301, which is the boundary between the third bent portion 234 and the second extending portion 233, and the third partition boundary 236a, as viewed in the second direction y, is 0.01 mm or more and 1.0 mm or less. The fourth distance d4 between the second boundary 2301 and the third partition boundary 236a is 1 / 20 times or more and 1 / 2 times or less the dimension t2 of the second base portion 231 in the thickness direction z. This configuration ensures an appropriate fourth distance d4 between the third partition boundary 236a and the second boundary 2301. This is more suitable for stabilizing the shape of the third bent portion 234 (second outer lead 23) after bending.

[0079] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0080] The present disclosure includes embodiments described in the following appendices: Appendix 1. a semiconductor device comprising: one or more semiconductor elements; a conductive support member; and a sealing resin having a first resin side surface facing one side in a first direction perpendicular to a thickness direction and covering the one or more semiconductor elements, wherein the conductive support member includes one or more first outer leads each having a first root portion extending from the first resin side surface in the first direction, a first mounting portion located on one side of the first root portion in the thickness direction, and a first extension portion connected to the first root portion via a first bend and connected to the first mounting portion via a second bend, wherein the first outer leads include a first partition portion including the first extension portion, a second partition portion including the first root portion and connected to the first partition portion, and a third partition portion including the first mounting portion and connected to the first partition portion, wherein a dimension of the first partition portion in the thickness direction and a second direction perpendicular to the first direction is greater than a dimension of the second partition portion in the second direction and a dimension of the third partition portion in the second direction, A semiconductor device in which at least one of a first partition boundary between the first partition portion and the second partition portion and a second partition boundary between the first partition portion and the third partition portion is located in the first extension portion. Appendix 2. The semiconductor device according to Appendix 1, in which the first partition boundary is located in the first root portion and the second partition boundary is located in the first extension portion. Appendix 3. The semiconductor device according to Appendix 2, in which, as viewed in the second direction, a first distance between the first boundary between the first bent portion and the first extension portion and the second partition boundary is 0.01 mm or more and 1.0 mm or less. Appendix 4. The semiconductor device according to Appendix 2 or 3, in which, as viewed in the second direction, the first distance between the first boundary between the first bent portion and the first extension portion and the second partition boundary is 1 / 20 times or more and 1 / 2 times or less the dimension of the first root portion in the thickness direction. Appendix 5. The semiconductor device according to claim 1, wherein the first partition boundary and the second partition boundary are located on the first extension portion. 6. The semiconductor device according to any one of claims 1 to 5, wherein the conductive support member includes a plurality of the first outer leads, and the plurality of first outer leads are arranged at intervals from each other in the second direction and overlap each other when viewed in the second direction.Supplementary Note 7. The sealing resin has a second resin side surface facing the other side in the first direction, the conductive support member includes one or more second outer leads each having a second root portion extending from the second resin side surface in the first direction, a second mounting portion located on one side of the second root portion in the thickness direction, and a second extending portion connected to the second root portion via a third bend and connected to the second mounting portion via a fourth bend, the second outer lead includes a fourth partition portion including the second extending portion, a fifth partition portion including the second root portion and connected to the fourth partition portion, and a sixth partition portion including the second mounting portion and connected to the fourth partition portion, the dimension of the fourth partition portion in the second direction being greater than the dimension of the fifth partition portion in the second direction and the dimension of the sixth partition portion in the second direction, The semiconductor device according to any one of Supplementary Notes 1 to 6, wherein at least one of a third partition boundary between the fourth partition portion and the fifth partition portion and a fourth partition boundary between the fourth partition portion and the sixth partition portion is located in the second extension portion.Supplementary Note 8. The semiconductor device according to Supplementary Note 7, wherein the third partition boundary is located in the second root portion and the fourth partition boundary is located in the second extension portion.Supplementary Note 9. The semiconductor device according to Supplementary Note 8, wherein, as viewed in the second direction, a second distance between the second boundary between the third bent portion and the second extension portion and the fourth partition boundary is 0.01 mm or more and 1.0 mm or less.Supplementary Note 10. The semiconductor device according to Supplementary Note 8 or 9, wherein, as viewed in the second direction, the second distance between the second boundary between the third bent portion and the second extension portion and the fourth partition boundary is 1 / 20 times or more and 1 / 2 times or less the dimension of the second root portion in the thickness direction.Supplementary Note 11. The semiconductor device according to Appendix 7, wherein the third partition boundary and the fourth partition boundary are located in the second extension portion. Appendix 12. The semiconductor device according to any one of Appendixes 7 to 11, wherein the conductive support member includes a plurality of the second outer leads, and the plurality of second outer leads are arranged at intervals from each other in the second direction and overlap each other when viewed in the second direction. Appendix 13. The semiconductor device according to Appendix 7, wherein the conductive support member includes a die pad portion on which the one or more semiconductor elements are mounted.Appendix 14. The semiconductor device according to Appendix 13, wherein the conductive support member is covered with the sealing resin and includes one or more first inner leads extending from each of the one or more first outer leads, and at least one of the one or more first inner leads is electrically connected to the one or more semiconductor elements. Appendix 15. The semiconductor device according to Appendix 14, wherein the conductive support member is covered with the sealing resin and includes one or more second inner leads extending from each of the one or more second outer leads, and at least one of the one or more second inner leads is electrically connected to the one or more semiconductor elements. Appendix 16. the die pad portion has a first die pad arranged on one side in the first direction and a second die pad arranged on the other side in the first direction and spaced apart from the first die pad in the first direction; the one or more semiconductor elements include a first semiconductor element mounted on the first die pad and a second semiconductor element mounted on the second die pad; at least one of the one or more first inner leads is electrically connected to the first semiconductor element; and at least one of the one or more second inner leads is electrically connected to the second semiconductor element.

[0081] A1, A11: semiconductor device 10: semiconductor element 11: first semiconductor element 111: electrode 12: insulating element 121: first electrode 122: second electrode 13: second semiconductor element 131: electrode 2: conductive support member 21: die pad portion 21A: first die pad 21B: second die pad 211: mounting surface 212: through hole 22: first outer lead 22A: one end side first outer lead 22B: other end side first outer lead 22C: intermediate first outer lead 221: first root portion 222: first mounting portion 223: first extending portion 224: first bent portion 225: second bent portion 226: first partition portion 226a: first partition boundary 226b: second partition boundary 227: second partition portion 228: third partition portion 2201: First boundary 23: Second outer lead 23A: Second outer lead on one end side 23B: Second outer lead on the other end side 23C: Second intermediate outer lead 231: Second base portion 232: Second mounting portion 233: Second extending portion 234: Third bent portion 235: Fourth bent portion 236: Fourth partition portion 236a: Third partition boundary 236b: Fourth partition boundary 237: Fifth partition portion 238: Sixth partition portion 2301: Second boundary 24: First inner lead 24A: First inner lead on one end side 24B: First inner lead on the other end side 24C: First intermediate inner lead 25: Second inner lead 25A: Second inner lead on one end side 25B: Second inner lead on the other end side 25C: Second intermediate inner lead 31, 32, 33,34: Wire 5: Sealing resin 51: Resin main surface 52: Resin back surface 53: First resin side surface 531: First upper part 532: First lower part 533: First intermediate part 54: Second resin side surface 541: Second upper part 542: Second lower part 543: Second intermediate part 55: Third resin side surface 551: Third upper part 552: Third lower part 553: Third intermediate part 56: Fourth resin side surface 561: Fourth upper part 562: Fourth lower part 563: Fourth intermediate part 81: Lead frame 811: Outer frame 812A: First die pad 812B: Second die pad 813: First lead 814: Second lead 815: Support lead 816: Dam bar d1: First distance d2: Second distance d3: Third distance d4: Fourth distance t1, t2: dimensions w1, w2, w3, w4, w5, w6: dimensions,

Claims

1. one or more semiconductor devices; a conductive support member; a sealing resin having a first resin side surface facing one side in a first direction perpendicular to the thickness direction, the sealing resin covering the one or more semiconductor elements; the conductive support member includes one or more first outer leads, each having a first root portion extending in the first direction from the first resin side surface, a first mounting portion located on one side of the first root portion in the thickness direction, and a first extending portion connected to the first root portion via a first bent portion and connected to the first mounting portion via a second bent portion; the first outer lead includes a first partition portion including the first extending portion, a second partition portion including the first root portion and connected to the first partition portion, and a third partition portion including the first mounting portion and connected to the first partition portion, a dimension of the first partition portion in the thickness direction and a dimension of the second direction perpendicular to the first direction are greater than a dimension of the second partition portion in the second direction and a dimension of the third partition portion in the second direction; At least one of a first partition boundary, which is a boundary between the first partition portion and the second partition portion, and a second partition boundary, which is a boundary between the first partition portion and the third partition portion, is located in the first extension portion.

2. The semiconductor device according to claim 1 , wherein the first partition boundary is located at the first root portion, and the second partition boundary is located at the first extension portion.

3. 3. The semiconductor device according to claim 2, wherein, when viewed in the second direction, a first distance between a first boundary that is a boundary between the first bend portion and the first extension portion and the second partition boundary is 0.01 mm or more and 1.0 mm or less.

4. 3. The semiconductor device according to claim 2, wherein, when viewed in the second direction, a first distance between a first boundary that is a boundary between the first bend portion and the first extension portion and the second partition boundary is greater than or equal to 1 / 20 times and less than or equal to 1 / 2 times the dimension of the first root portion in the thickness direction.

5. The semiconductor device according to claim 1 , wherein the first partition boundary and the second partition boundary are located on the first extension portion.

6. the conductive support member includes a plurality of the first outer leads, 2 . The semiconductor device according to claim 1 , wherein the first outer leads are arranged at intervals from one another in the second direction and overlap one another when viewed in the second direction.

7. the sealing resin has a second resin side surface facing the other side in the first direction, the conductive support member includes one or more second outer leads each having a second root portion extending in the first direction from the second resin side surface, a second mounting portion located on one side of the second root portion in the thickness direction, and a second extending portion connected to the second root portion via a third bend portion and connected to the second mounting portion via a fourth bend portion; the second outer lead includes a fourth compartment including the second extending portion, a fifth compartment including the second root portion and connected to the fourth compartment, and a sixth compartment including the second mounting portion and connected to the fourth compartment, a dimension of the fourth partition in the second direction is greater than a dimension of the fifth partition in the second direction and a dimension of the sixth partition in the second direction; 7. The semiconductor device according to claim 1, wherein at least one of a third partition boundary, which is a boundary between the fourth partition portion and the fifth partition portion, and a fourth partition boundary, which is a boundary between the fourth partition portion and the sixth partition portion, is located in the second extension portion.

8. The semiconductor device according to claim 7 , wherein the third partition boundary is located at the second root portion, and the fourth partition boundary is located at the second extension portion.

9. 9. The semiconductor device according to claim 8, wherein, when viewed in the second direction, a second distance between a second boundary that is a boundary between the third bend portion and the second extension portion and the fourth partition boundary is 0.01 mm or more and 1.0 mm or less.

10. 9. The semiconductor device according to claim 8, wherein, when viewed in the second direction, a second distance between a second boundary that is a boundary between the third bend portion and the second extension portion and the fourth partition boundary is greater than or equal to 1 / 20 times and less than or equal to 1 / 2 times the dimension of the second root portion in the thickness direction.

11. The semiconductor device according to claim 7 , wherein the third partition boundary and the fourth partition boundary are located on the second extension portion.

12. the conductive support member includes a plurality of the second outer leads, 8. The semiconductor device according to claim 7, wherein the second outer leads are arranged at intervals from one another in the second direction and overlap one another when viewed in the second direction.

13. 8. The semiconductor device according to claim 7, wherein the conductive support member includes a die pad portion on which the one or more semiconductor elements are mounted.

14. the conductive support member is covered with the sealing resin and includes one or more first inner leads extending from each of the one or more first outer leads; 14. The semiconductor device according to claim 13, wherein at least one of the one or more first inner leads is electrically connected to the one or more semiconductor elements.

15. the conductive support member is covered with the sealing resin and includes one or more second inner leads extending from each of the one or more second outer leads; 15. The semiconductor device according to claim 14, wherein at least one of the one or more second inner leads is electrically connected to the one or more semiconductor elements.

16. the die pad portion has a first die pad arranged on one side in the first direction and a second die pad arranged on the other side in the first direction and spaced apart from the first die pad in the first direction; the one or more semiconductor elements include a first semiconductor element mounted on the first die pad and a second semiconductor element mounted on the second die pad; At least one of the one or more first inner leads is electrically connected to the first semiconductor element, 16. The semiconductor device according to claim 15, wherein at least one of the one or more second inner leads is electrically connected to the second semiconductor element.