Semiconductor device and vehicle

Abstract

This semiconductor device (A1) comprises a first conductive part (32A), a second conductive part (32B), a first semiconductor element (10A), a second semiconductor element (10B), two first terminals (41), a second terminal (42), a third terminal (43), a first conductive member (5), a second conductive member (6), a plurality of first control terminals (46), a plurality of second control terminals (47), and a sealing resin. In a first direction (x) orthogonal to the thickness direction (z), the first conductive part and the second conductive part are spaced apart from each other. The second terminal and the second conduction member constitute a conduction path (Cp) positioned outside the plurality of first control terminals in a second direction (y) orthogonal to the thickness direction and the first direction.

Description

Semiconductor device and vehicle

[0001] The present disclosure relates to a semiconductor device and a vehicle.

[0002] Conventionally, semiconductor devices including power switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have been known. Patent Document 1 discloses a conventional semiconductor device (power module). The semiconductor device described in Patent Document 1 includes input and output terminals through which a main current to be switched flows, and a plurality of control terminals.

[0003] Japanese Patent Application Laid-Open No. 2021-190505

[0004] The input terminals, output terminals and a plurality of control terminals are preferably arranged appropriately.

[0005] An object of the present disclosure is to provide an improved semiconductor device. In particular, in view of the above-described circumstances, an object of the present disclosure is to provide a semiconductor device that allows for more appropriate arrangement of terminals. Another object of the present disclosure is to provide a vehicle equipped with such a semiconductor device.

[0006] A first aspect of the present disclosure provides a semiconductor device comprising: a first conductive portion, a second conductive portion, one or more first semiconductor elements having a first electrode that is a positive electrode of a current path to be switched, a second electrode that is a negative electrode, and a third electrode for switching the conduction state between the first electrode and the second electrode; one or more second semiconductor elements having the first electrode that is a positive electrode of the current path to be switched, a second electrode that is a negative electrode, and a third electrode for switching the conduction state between the first electrode and the second electrode; two first terminals, a second terminal, a third terminal, a first conductive member, a second conductive member, a plurality of first control terminals, a plurality of second control terminals, and a sealing resin. The first conductive portion has a first main surface facing a first side in a thickness direction, and the second conductive portion has a second main surface facing the first side in the thickness direction. In a first direction perpendicular to the thickness direction, the first conductive portion is disposed on a first side, and the second conductive portion is disposed on a second side. The first electrode of the first semiconductor element is conductively bonded to the first main surface, and the first electrode of the second semiconductor element is conductively bonded to the second main surface. The multiple first control terminals are located on the first side of the first semiconductor element in the first direction, spaced apart from each other in a second direction perpendicular to the first direction and the thickness direction, and protrude toward the first side in the thickness direction relative to the first conductive portion. The two first terminals are spaced apart from each other in the second direction, connected to the first main surface, and protrude toward the first side in the first direction beyond the multiple first control terminals. The second terminal is located between the two first terminals in the second direction and protrudes toward the first side in the first direction beyond the multiple first control terminals. The third terminal is connected to the second main surface. The first conductive member is conductively bonded to the second electrode and the second main surface of the first semiconductor element. The second conductive member is electrically connected to the second electrode and the second terminal of the second semiconductor element. The second terminal and the second conductive member form a conductive path located outside the plurality of first control terminals in the second direction.

[0007] A vehicle provided by a second aspect of the present disclosure includes a drive source and the semiconductor device provided by the first aspect of the present disclosure, the semiconductor device being electrically connected to the drive source.

[0008] According to the above configuration, the terminals can be more appropriately arranged in the semiconductor device.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0010] FIG. 1 is a perspective view of a main portion of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a perspective view of a main portion of a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a plan view of a main portion of a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a side view of a main portion of a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a plan view of a main portion of a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a plan view of a main portion of a semiconductor device according to a first embodiment of the present disclosure. FIG. 8 is a side view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 9 is a bottom view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 4. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 4. FIG. 12 is an enlarged cross-sectional view of a main portion of a semiconductor device according to a first embodiment of the present disclosure. FIG. 13 is an enlarged cross-sectional view of a main portion of a semiconductor device according to a first embodiment of the present disclosure. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 4. Fig. 15 is a cross-sectional view taken along line XV-XV in Fig. 4. Fig. 16 is a cross-sectional view taken along line XVI-XVI in Fig. 4. Fig. 17 is a cross-sectional view taken along line XVII-XVII in Fig. 4. Fig. 18 is a cross-sectional view taken along line XVIII-XVIII in Fig. 4. Fig. 19 is a circuit diagram showing a semiconductor device according to a first embodiment of the present disclosure. Fig. 20 is a system configuration diagram showing a vehicle equipped with a semiconductor device according to the first embodiment of the present disclosure. Fig. 21 is a cross-sectional view showing a semiconductor device according to a second embodiment of the present disclosure. Fig. 22 is a partial plan view showing a semiconductor device according to a third embodiment of the present disclosure.

[0011] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0012] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0013] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0014] 1 to 19 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 according to this embodiment includes a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a support substrate 3, a second terminal 42, a third terminal 43, two first terminals 41, a plurality of control terminals 45, a control terminal support 48, a first conductive member 5, a second conductive member 6, and a sealing resin 8.

[0015] FIG. 1 is a perspective view of a main portion of the semiconductor device A1. FIG. 2 is a perspective view of a main portion of the semiconductor device A1. FIG. 3 is a plan view of the semiconductor device A1. FIG. 4 is a plan view of a main portion of the semiconductor device A1. FIG. 5 is a side view of a main portion of the semiconductor device A1. FIG. 6 is a plan view of a main portion of the semiconductor device A1. FIG. 7 is a plan view of a main portion of the semiconductor device A1. FIG. 8 is a side view of the semiconductor device A1. FIG. 9 is a bottom view of the semiconductor device A1. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 4. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 4. FIG. 12 is an enlarged cross-sectional view of a main portion of the semiconductor device A1. FIG. 13 is an enlarged cross-sectional view of a main portion of the semiconductor device A1. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 4. FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 4. FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 4. Fig. 17 is a cross-sectional view taken along line XVII-XVII in Fig. 4. Fig. 18 is a cross-sectional view taken along line XVIII-XVIII in Fig. 4. Fig. 19 is a circuit diagram showing the semiconductor device A1.

[0016] In these figures, for example, the thickness direction z is the "thickness direction" of the present disclosure, the first direction x is the "first direction" of the present disclosure, and the second direction y is the "second direction" of the present disclosure.

[0017] The multiple first semiconductor elements 10A and the multiple second semiconductor elements 10B are electronic components that are central to the functionality of the semiconductor device A1. The constituent material of each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is a semiconductor material primarily composed of, for example, silicon carbide (SiC). This semiconductor material is not limited to SiC and may be silicon (Si), gallium nitride (GaN), diamond (C), or the like. Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is, for example, a power semiconductor chip with switching function, such as a metal oxide semiconductor field effect transistor (MOSFET). In this embodiment, the first semiconductor elements 10A and the second semiconductor elements 10B are MOSFETs, but are not limited thereto and may be other transistors such as insulated gate bipolar transistors (IGBTs). Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is the same element. Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is, for example, an n-channel MOSFET, but may also be a p-channel MOSFET.

[0018] 7, 12, and 13, the first semiconductor element 10A and the second semiconductor element 10B each have an element main surface 101 and an element back surface 102. In each of the first semiconductor elements 10A and the second semiconductor elements 10B, the element main surface 101 and the element back surface 102 are spaced apart in the thickness direction z. The element main surface 101 faces the z1 side in the thickness direction z, and the element back surface 102 faces the z2 side in the thickness direction z.

[0019] In this embodiment, the semiconductor device A1 includes four first semiconductor elements 10A and four second semiconductor elements 10B. However, the number of first semiconductor elements 10A and the number of second semiconductor elements 10B are not limited to this configuration and may be changed as appropriate depending on the performance required of the semiconductor device A1. In the examples shown in FIGS. 6 and 7 , four first semiconductor elements 10A and four second semiconductor elements 10B are arranged. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B may be two, three, or five or more. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B may be equal to or different from each other. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B is determined by the current capacity handled by the semiconductor device A1.

[0020] 19, the semiconductor device A1 is configured as, for example, a half-bridge switching circuit. In this case, a plurality of first semiconductor elements 10A form an upper arm circuit of the semiconductor device A1, and a plurality of second semiconductor elements 10B form a lower arm circuit. In the upper arm circuit, the plurality of first semiconductor elements 10A are connected in parallel with each other, and in the lower arm circuit, the plurality of second semiconductor elements 10B are connected in parallel with each other. Each first semiconductor element 10A and each second semiconductor element 10B are connected in series to form a bridge layer.

[0021] As shown in FIGS. 6 , 7 , and 17 , each of the multiple first semiconductor elements 10A is mounted on a first conductive portion 32A of a support substrate 3 (described later). In the example shown in FIGS. 6 and 7 , the multiple first semiconductor elements 10A are aligned, for example, in the second direction y and spaced apart from one another. The multiple first semiconductor elements 10A may also be spaced apart from one another in the second direction y but at different positions in the first direction x. Each first semiconductor element 10A is conductively bonded to the first conductive portion 32A via a first conductive bonding material 19A. When each first semiconductor element 10A is bonded to the first conductive portion 32A, the element back surface 102 faces the first conductive portion 32A. Unlike the present embodiment, the multiple first semiconductor elements 10A may be mounted on a metal member other than a part of the DBC substrate, etc. In this case, the metal member corresponds to the first conductive portion in the present disclosure. This metal member may be supported by, for example, the first conductive portion 32A.

[0022] As shown in FIGS. 6 , 7 , and 16 , the second semiconductor elements 10B are mounted on second conductive portions 32B of a support substrate 3 (described later). In the examples shown in FIGS. 6 and 7 , the second semiconductor elements 10B are arranged, for example, in the second direction y and spaced apart from one another. The second semiconductor elements 10B may be spaced apart from one another in the second direction y but may be positioned at different positions in the first direction x. Each second semiconductor element 10B is conductively bonded to the second conductive portion 32B via a second conductive bonding material 19B. When each second semiconductor element 10B is bonded to the second conductive portion 32B, the element back surface 102 faces the second conductive portion 32B. As can be seen from FIG. 7 , the first semiconductor elements 10A and the second semiconductor elements 10B overlap when viewed in the first direction x, but they do not necessarily need to overlap. Unlike the present embodiment, the plurality of second semiconductor elements 10B may be mounted on a metal member that is different from a part of the DBC substrate or the like. In this case, the metal member corresponds to the second conductive portion in the present disclosure. This metal member may be supported by, for example, the second conductive portion 32B.

[0023] The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B each have a gate electrode 11, a source electrode 12, a source sense electrode 13, and a drain electrode 15. The configurations of the gate electrode 11, the source electrode 12, the source sense electrode 13, and the drain electrode 15 described below are common to each of the first semiconductor elements 10A and each of the second semiconductor elements 10B. The gate electrode 11, the source electrode 12, and the source sense electrode 13 are provided on the element main surface 101. The gate electrode 11, the source electrode 12, and the source sense electrode 13 are insulated by an insulating film (not shown). The drain electrode 15 is provided on the element back surface 102.

[0024] The drain electrode 15 is an example of a first electrode according to the present disclosure. The drain electrode 15 is a positive electrode of a current path to be switched in the semiconductor device A1. The drain electrode 15 covers the entire area (or substantially the entire area) of the back surface 102 of the element. The drain electrode 15 is formed, for example, by Ag (silver) plating. The source electrode 12 is an example of a second electrode according to the present disclosure. The source electrode 12 is a negative electrode of a current path to be switched in the semiconductor device A1. The gate electrode 11 is an example of a third electrode according to the present disclosure. The gate electrode 11 is an electrode for switching the conduction state between the drain electrode 15 and the source electrode 12, and a drive signal (for example, a gate voltage) for driving the first semiconductor element 10A (second semiconductor element 10B) is input to the gate electrode 11. The source sense electrode 13 is an electrode at the same potential as the source electrode 12.

[0025] When a drive signal (gate voltage) is input to the gate electrode 11, each first semiconductor element 10A (each second semiconductor element 10B) switches between a conductive state and a cut-off state in response to the drive signal. In the conductive state, a current flows from the drain electrode 15 to the source electrode 12, and in the cut-off state, this current does not flow. In other words, each first semiconductor element 10A (each second semiconductor element 10B) performs a switching operation. The semiconductor device A1 converts a DC voltage input between the two first and second terminals 41 and 42 into, for example, an AC voltage, using the switching functions of the multiple first semiconductor elements 10A and multiple second semiconductor elements 10B, and outputs the AC voltage from the third terminal 43.

[0026] The support substrate 3 supports a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B. The specific configuration of the support substrate 3 is not limited in any way, and may be, for example, a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support substrate 3 includes an insulating layer 31, a first metal layer 32, and a back surface metal layer 33. The first metal layer 32 includes a first conductive portion 32A and a second conductive portion 32B. The dimension of the support substrate 3 in the thickness direction z is, for example, not less than 0.4 mm and not more than 3.0 mm.

[0027] The insulating layer 31 is made of, for example, ceramics with excellent thermal conductivity. Examples of such ceramics include SiN (silicon nitride). The insulating layer 31 is not limited to ceramics and may be an insulating resin sheet or the like. The insulating layer 31 has, for example, a rectangular shape in a plan view. The dimension of the insulating layer 31 in the thickness direction z is, for example, 0.05 mm or more and 1.0 mm or less.

[0028] The first conductive portion 32A supports a plurality of first semiconductor elements 10A, and the second conductive portion 32B supports a plurality of second semiconductor elements 10B. The first conductive portion 32A and the second conductive portion 32B are formed on the upper surface of the insulating layer 31 (the surface facing the z1 side in the thickness direction z). The constituent material of the first conductive portion 32A and the second conductive portion 32B includes, for example, Cu (copper). The constituent material may include, for example, Al (aluminum) other than Cu (copper). The first conductive portion 32A and the second conductive portion 32B are spaced apart in the first direction x. The first conductive portion 32A is located on the x1 side of the second conductive portion 32B in the first direction x. The first conductive portion 32A and the second conductive portion 32B each have, for example, a rectangular shape in a plan view. The first conductive portion 32A and the second conductive portion 32B, together with the first conductive member 5 and the second conductive member 6, constitute a path of the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B.

[0029] The first conductive portion 32A has a first main surface 301A. The first main surface 301A is a flat surface facing the z1 side in the thickness direction z. A plurality of first semiconductor elements 10A are bonded to the first main surface 301A of the first conductive portion 32A via first conductive bonding materials 19A. The second conductive portion 32B has a second main surface 301B. The second main surface 301B is a flat surface facing the z1 side in the thickness direction z. A plurality of second semiconductor elements 10B are bonded to the second main surface 301B of the second conductive portion 32B via second conductive bonding materials 19B. The constituent materials of the first conductive bonding material 19A and the second conductive bonding material 19B are not particularly limited and may be, for example, solder, a metal paste material containing a metal such as Ag (silver), or a sintered metal containing a metal such as Ag (silver). The dimension of first conductive portion 32A and second conductive portion 32B in thickness direction z is, for example, not less than 0.1 mm and not more than 1.5 mm.

[0030] The back surface metal layer 33 is formed on the lower surface (surface facing the z2 side in the thickness direction z) of the insulating layer 31. The constituent material of the back surface metal layer 33 is the same as the constituent material of the first metal layer 32. The back surface metal layer 33 has a back surface 302. The back surface 302 is a flat surface facing the z2 side in the thickness direction z. In the example shown in FIG. 9 , the back surface 302 is exposed from the sealing resin 8, for example. A heat dissipation member (for example, a heat sink) (not shown) can be attached to the back surface 302. The back surface 302 may not be exposed from the sealing resin 8 and may be covered by the sealing resin 8. The back surface metal layer 33 overlaps both the first conductive portion 32A and the second conductive portion 32B in a plan view.

[0031] The second terminal 42, the third terminal 43, and the two first terminals 41 are each made of a metal plate, and the metal plate may contain, for example, copper (Cu) or a copper alloy.

[0032] 19 , a DC voltage to be converted into power is input to the second terminal 42 and the first terminal 41. The first terminal 41 is a positive electrode (P terminal), and the second terminal 42 is a negative electrode (N terminal). An AC voltage converted into power by the first semiconductor element 10A and the second semiconductor element 10B is output from the third terminal 43. The second terminal 42, the third terminal 43, and the two first terminals 41 each include a portion covered with the sealing resin 8 and a portion exposed from the sealing resin 8.

[0033] As shown in FIGS. 1 to 7 , the two first terminals 41 are spaced apart from each other in the second direction y. Each of the two first terminals 41 is connected to the first main surface 301A of the first conductive portion 32A. As shown in FIGS. 6 and 7 , the two first terminals 41 are located on the x1 side in the first direction x with respect to the multiple first semiconductor elements 10A. The two first terminals 41 are electrically connected to the first conductive portion 32A and, via the first conductive portion 32A, to the drain electrode 15 of each first semiconductor element 10A. In this embodiment, the first terminal 41 has a first terminal portion 411, a first connection portion 412, and a first step portion 413.

[0034] The first terminal portion 411 is exposed from the sealing resin 8 and is a portion used when electrically connecting the semiconductor device A1 to an external device. The first connection portion 412 is conductively joined to the first main surface 301A of the first conductive portion 32A, as shown in FIGS. 10 and 15 . The method of conductive joining is not limited, and methods such as ultrasonic joining, laser joining, welding, or methods using solder, metal paste, silver sintered body, etc. may be appropriately adopted. The first step portion 413 is interposed between the first terminal portion 411 and the first connection portion 412, and makes the first terminal portion 411 and the first connection portion 412 different in position in the thickness direction z.

[0035] The second terminal 42 is electrically connected to the source electrodes 12 of the plurality of second semiconductor elements 10B via the second conductive member 6. In this embodiment, the second terminal 42 and the second conductive member 6 are formed separately from each other and are electrically connected to each other. The second terminal 42 and the second conductive member 6 may be an integral member. An integral member refers to a configuration formed, for example, by cutting and bending a single metal plate material and not including any bonding material for joining them. As shown in FIGS. 1 and 4 , the second terminal 42 is located between the two first terminals 41 in the second direction y. The second terminal 42 is located on the x1 side in the first direction x with respect to the plurality of first semiconductor elements 10A. In this embodiment, the second terminal 42 has a second terminal portion 421 and a second connection portion 422, as shown in FIG. 14 .

[0036] The second terminal 421 is exposed from the sealing resin 8 and is a portion used when electrically connecting the semiconductor device A1 to an external device. The second terminal 421 is located between the two first terminals 411 in the second direction y. The second terminal 421 is exposed from the sealing resin 8. The second connection portion 422 extends from the second terminal 421 to the x2 side in the x direction.

[0037] As can be seen from FIGS. 6 , 7 , and 14 , the third terminal 43 is conductively bonded to the second conductive portion 32B. The conductive bonding method is not limited to any particular method, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, sintered silver, etc. may be appropriately adopted. As shown in FIG. 6 and other figures, the third terminal 43 is located on the x2 side of the second semiconductor elements 10B in the first direction x. The third terminal 43 is conductively connected to the second conductive portion 32B and, via the second conductive portion 32B, to the drain electrodes 15 of the second semiconductor elements 10B. The number of third terminals 43 is not limited to one and may be, for example, two or more.

[0038] In this embodiment, the third terminal 43 has a third terminal portion 431 and a third connection portion 432. The third terminal portion 431 is exposed from the sealing resin 8 and is a portion used when electrically connecting the semiconductor device A1 to an external device. The third connection portion 432 extends from the third terminal portion 431 toward the x1 side in the x direction. The third connection portion 432 is conductively joined to the second main surface 301B of the second conductive portion 32B.

[0039] The plurality of control terminals 45 are pin-shaped terminals for controlling the first semiconductor elements 10A and the second semiconductor elements 10B. The plurality of control terminals 45 include a plurality of first control terminals 46A, 46B, 46E and a plurality of second control terminals 47A, 47B, 47C, 47E. The plurality of first control terminals 46A, 46B, 46E are used to control the first semiconductor elements 10A, etc. The plurality of second control terminals 47A, 47B, 47C, 47E are used to control the second semiconductor elements 10B, etc.

[0040] The first control terminals 46A, 46B, and 46E are spaced apart from one another in the second direction y. In the illustrated example, the first control terminals 46A, 46B, and 46E are arranged substantially in a straight line along the second direction y, but this is not limiting. For example, the first control terminals 46A, 46B, and 46E may be arranged at different positions in the first direction. As shown in FIGS. 6 , 11 , and 18 , the first control terminals 46A, 46B, and 46E protrude from the sealing resin 8 toward the z1 side in the thickness direction z. The first control terminals 46A, 46B, and 46E are supported by the first conductive portion 32A via a control terminal support 48 (first support portion 48A described below). As shown in FIGS. 4 and 6 , the first control terminals 46A, 46B, and 46E are located between the first semiconductor elements 10A and the second terminals 42 and first terminals 41 in the first direction x.

[0041] The first control terminal 46A is a terminal (gate terminal) for inputting a drive signal for the plurality of first semiconductor elements 10A. A drive signal for driving the plurality of first semiconductor elements 10A is input to the first control terminal 46A (for example, a gate voltage is applied).

[0042] The first control terminal 46B is a terminal (source sense terminal) for detecting source signals of the multiple first semiconductor elements 10A. The first control terminal 46B detects a voltage (a voltage corresponding to a source current) applied to each source electrode 12 of the multiple first semiconductor elements 10A.

[0043] The first control terminal 46E is a terminal (drain sense terminal) for detecting drain signals of the plurality of first semiconductor elements 10A. The first control terminal 46E detects the voltages (voltages corresponding to the drain currents) applied to the drain electrodes 15 of the plurality of first semiconductor elements 10A.

[0044] The second control terminals 47A, 47B, 47C, and 47E are spaced apart from one another in the second direction y. In the illustrated example, the second control terminals 47A, 47B, 47C, and 47E are arranged substantially in a straight line in the second direction y, but this is not limiting. For example, the second control terminals 47A, 47B, 47C, and 47E may be arranged at different positions in the first direction. As shown in FIGS. 6 and 11 , each of the second control terminals 47A, 47B, 47C, and 47E is supported by the second conductive portion 32B via a control terminal support 48 (a second support portion 48B described below). As shown in FIGS. 4 and 6 , each of the second control terminals 47A, 47B, 47C, and 47E is located between the second semiconductor elements 10B and two third terminals 43 in the first direction x.

[0045] The second control terminal 47A is a terminal (gate terminal) for inputting a drive signal for the second semiconductor elements 10B. A drive signal for driving the second semiconductor elements 10B is input to the second control terminal 47A (for example, a gate voltage is applied).

[0046] The second control terminal 47B is a terminal (source sense terminal) for detecting source signals of the second semiconductor elements 10B. The second control terminal 47B detects a voltage (a voltage corresponding to a source current) applied to each source electrode 12 of the second semiconductor elements 10B.

[0047] The second control terminals 47C and 47E are terminals used for temperature detection using the thermistor 17.

[0048] Each of the plurality of control terminals 45 (the plurality of first control terminals 46A to 46E and the plurality of second control terminals 47A to 47D) includes a holder 451 and a metal pin 452.

[0049] The holder 451 is made of a conductive material. As shown in FIGS. 12 and 13 , the holder 451 is bonded to the control terminal support 48 (first metal layer 482 described below) via a conductive bonding material 459. The holder 451 includes a cylindrical portion, an upper flange, and a lower flange. The upper flange is connected to the upper part of the cylindrical portion, and the lower flange is connected to the lower part of the cylindrical portion. A metal pin 452 is inserted through at least the upper flange and the cylindrical portion of the holder 451. The holder 451 is covered with sealing resin 8 (second protrusion 852 described below).

[0050] The metal pin 452 is a rod-shaped member extending in the thickness direction z. The metal pin 452 is supported by, for example, being press-fitted into a holder 451. The metal pin 452 is electrically connected to the control terminal support body 48 (a first metal layer 482 described below) at least via the holder 451.

[0051] The control terminal support body 48 supports the plurality of control terminals 45. The control terminal support body 48 is interposed between the first main surface 301A and the second main surface 301B and the plurality of control terminals 45 in the thickness direction z.

[0052] The control terminal support 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 32A and supports a plurality of first control terminals 46A to 46E among the plurality of control terminals 45. As shown in FIG. 12 , the first support portion 48A is bonded to the first conductive portion 32A via a bonding material 49. The bonding material 49 may be conductive or insulating, and is, for example, solder. The second support portion 48B is disposed on the second conductive portion 32B and supports a plurality of second control terminals 47A to 47D among the plurality of control terminals 45. As shown in FIG. 13 , the second support portion 48B is bonded to the second conductive portion 32B via the bonding material 49.

[0053] The control terminal support 48 (each of the first support portion 48A and the second support portion 48B) is made of, for example, a direct bonded copper (DBC) substrate and includes an insulating layer 481, a first metal layer 482, and a second metal layer 483 stacked on top of each other.

[0054] The insulating layer 481 is made of, for example, ceramics and has, for example, a rectangular shape in plan view.

[0055] As shown in FIGS. 12 and 13 , the first metal layer 482 is formed on the upper surface of the insulating layer 481. Each control terminal 45 is disposed on the first metal layer 482. The first metal layer 482 includes, for example, copper (Cu) or a copper (Cu) alloy. As shown in FIGS. 6 and 7 , the first metal layer 482 includes a first portion 482A, a second portion 482B, a fifth portion 482E, a sixth portion 482F, and a seventh portion 482G. The first portion 482A, the second portion 482B, the fifth portion 482E, the sixth portion 482F, and the seventh portion 482G are spaced apart and insulated from one another.

[0056] A plurality of wires 71 are bonded to the first portion 482A, and the first portion 482A is electrically connected to the gate electrode 11 of each first semiconductor element 10A (each second semiconductor element 10B) via the wires 71. Wires 71, 72, 74, 75, and 76 are omitted from figures other than Figure 7. A first control terminal 46A is bonded to the first portion 482A of the first support portion 48A, and a second control terminal 47A is bonded to 482B of the second support portion 48B.

[0057] The sixth portion 482F is electrically connected to the gate electrode 11 of one of the first semiconductor elements 10A via a wire 71. The sixth portion 482F is electrically connected to the first portion 482A via a wire 75.

[0058] The seventh portion 482G has a plurality of wires 72 joined thereto, and is electrically connected to the source sense electrodes 13 of the first semiconductor elements 10A (the second semiconductor elements 10B) via the respective wires 72. The seventh portion 482G is electrically connected to the second portion 482B via wires 76. The first control terminal 46B is joined to the second portion 482B of the first support portion 48A, and the second control terminal 47B is joined to the second portion 482B of the second support portion 48B.

[0059] 6, the fifth portion 482E of the first support portion 48A is joined to the wire 74 and is electrically connected to the first conductive portion 32A via the wire 74. The first control terminal 46E is joined to the fifth portion 482E of the first support portion 48A.

[0060] The thermistor 17 is conductively joined to the fifth portion 482E and the third portion 482C of the second support portion 48B. The second control terminal 47E is joined to the fifth portion 482E of the second support portion 48B, and the second control terminal 47C is joined to the third portion 482C of the second support portion 48B.

[0061] The wires 71, 72, 74, 75, and 76 are, for example, bonding wires. The material of each of the wires 71, 72, and 74 includes, for example, any one of Au (gold), Al (aluminum), and Cu (copper).

[0062] 12, 13, etc., the second metal layer 483 is formed on the lower surface of the insulating layer 481. As shown in Fig. 12, the second metal layer 483 of the first support portion 48A is bonded to the first conductive portion 32A via a bonding material 49. As shown in Fig. 13, the second metal layer 483 of the second support portion 48B is bonded to the second conductive portion 32B via a bonding material 49.

[0063] The first conductive member 5 and the second conductive member 6, together with the first conductive portion 32A and the second conductive portion 32B, form a path for a main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. The first conductive member 5 and the second conductive member 6 are located on the z1 side in the thickness direction z from the first main surface 301A and the second main surface 301B, and overlap the first main surface 301A and the second main surface 301B in a plan view. In this embodiment, the first conductive member 5 and the second conductive member 6 are each made of a metal plate material. The metal includes, for example, Cu (copper) or a Cu (copper) alloy. Specifically, the first conductive member 5 and the second conductive member 6 are made of an appropriately bent metal plate material.

[0064] 2 and 6 , the first conductive member 5 is connected to the source electrodes 12 of the plurality of first semiconductor elements 10A and the second conductive portion 32B, and electrically connects the source electrodes 12 of the plurality of first semiconductor elements 10A and the second conductive portion 32B. The first conductive member 5 forms a path for a main circuit current switched by the plurality of first semiconductor elements 10A. As shown in FIGS. 2 and 6 , the first conductive member 5 includes a main portion 53, a plurality of fourth connection portions 51, and a plurality of fifth connection portions 52.

[0065] The main portion 53 is located between the plurality of first semiconductor elements 10A and the second conductive portion 32B in the first direction x, and is a strip-shaped portion extending in the second direction y in a plan view. The main portion 53 is spaced apart in the thickness direction z from the first main surface 301A and the second main surface 301B on the z1 side in the thickness direction z. As shown in FIG. 14 and other figures, the main portion 53 is located on the z2 side in the thickness direction z with respect to a main portion 63 of a second conductive member 6, which will be described later.

[0066] In the present embodiment, the main portion 53 is disposed parallel to the first main surface 301A and the second main surface 301B. A plurality of first openings 514 are formed in the main portion 53. Portions of the insulating layer 31 located between the first conductive portion 32A and the second conductive portion 32B are exposed through the plurality of first openings 514. The plurality of first openings 514 are formed to facilitate the flow of the resin material between the upper side (the z1 side in the thickness direction z) and the lower side (the z2 side in the thickness direction z) near the main portion 53 (first conductive member 5) when injecting the resin material to form the sealing resin 8.

[0067] As shown in FIG. 6 and other figures, the plurality of fourth connection portions 51 and the plurality of fifth connection portions 52 are each connected to a main portion 53. The plurality of fourth connection portions 51 are arranged corresponding to the plurality of first semiconductor elements 10A. Specifically, each fourth connection portion 51 is located on the x1 side of the main portion 53 in the first direction x. Each fifth connection portion 52 is located on the x2 side of the main portion 53 in the first direction x. As shown in FIG. 12, each fourth connection portion 51 and the corresponding source electrode 12 of the first semiconductor element 10A are bonded via a conductive bonding material 59. Each fifth connection portion 52 and the second conductive portion 32B are bonded via the conductive bonding material 59. The material of the conductive bonding material 59 is not particularly limited and may be, for example, solder, a metal paste material, or a sintered metal. In this embodiment, the fourth connection portion 51 has two portions spaced apart in the second direction y. These two portions are joined to the source electrode 12 on both sides in the second direction y, with a gate finger (not shown) of the source electrode 12 of the first semiconductor element 10A sandwiched therebetween.

[0068] The second conductive member 6 is electrically connected to the source electrodes 12 of the second semiconductor elements 10B and the second terminals 42, 42, establishing electrical continuity therebetween. As shown in FIGS. 1 , 4 , and 18 , the second terminals 42 and the second conductive member 6 form a conductive path Cp. The conductive path Cp is located outside the first control terminals 46 in the second direction y. In this embodiment, the second terminals 42 and the second conductive member 6 form two conductive paths Cp. One conductive path Cp is located on the y1 side of the first control terminals 46 in the second direction y, and the other conductive path Cp is located on the y2 side of the first control terminals 46 in the second direction y. That is, the two conductive paths Cp are located on both outer sides of the first control terminals 46 in the second direction y. In the illustrated example, the conduction path Cp is shown by a dotted line, but this is for ease of understanding, and the actual conduction direction of the conduction path Cp is determined by the shapes of the second terminal 42 and the second conductive member 6, etc.

[0069] In this embodiment, the second conductive member 6 has a plurality of sixth connection portions 61, a seventh connection portion 62, a main portion 63, a plurality of relay portions 64, two relay portions 65 and two relay portions 66, as shown in Figures 4, 13 and 14.

[0070] The sixth connection portions 61 are portions that are individually bonded to the second semiconductor elements 10B. Each sixth connection portion 61 and the source electrode 12 of each second semiconductor element 10B are bonded via a conductive bonding material 69. The material of the conductive bonding material 69 is not particularly limited and may be, for example, solder, a metal paste material, or a sintered metal. In this embodiment, the sixth connection portion 61 has two flat portions 611 and two first inclined portions 612.

[0071] The two flat portions 611 are aligned in the second direction y. The two flat portions 611 are spaced apart from each other in the second direction y. The shape of the flat portions 611 is not limited in any way, and in the illustrated example, they are rectangular. The two flat portions are joined to the source electrode 12 on both sides in the second direction y, sandwiching a gate finger (not shown) of the source electrode 12 of the second semiconductor element 10B therebetween.

[0072] The two first inclined portions 612 are connected to the x1 side in the x direction of the two flat portions 611. The first inclined portions 612 are inclined so that the farther they are from the flat portions 611 in the first direction x, the closer they are to the z1 side in the thickness direction z.

[0073] The two seventh connection portions 62 are electrically connected to the second connection portions 422 of the second terminals 42, respectively. In the illustrated example, the seventh connection portions 62 are conductively joined to the second connection portions 422. The method of conductive joining is not limited in any way, and methods such as ultrasonic joining, laser joining, welding, or methods using solder, metal paste, silver sintered body, etc. may be appropriately adopted. In the illustrated example, the seventh connection portions 62 are joined to the second connection portion 422 via a conductive joining material 69. The two seventh connection portions 62 are arranged apart in the second direction y.

[0074] The main portion 63 is interposed between the plurality of sixth connection portions 61 and seventh connection portions 62. The main portion 63 is a flat plate-shaped portion that is perpendicular to the thickness direction z.

[0075] The multiple relay portions 64 are individually interposed between the multiple sixth connection portions 61 and the main portion 63. In the illustrated example, the multiple relay portions 64 are arranged radially from the main portion 63 toward the multiple sixth connection portions 61.

[0076] The two relay portions 65 extend outward in the second direction y from the two seventh connection portions 62. As shown in Figures 4, 10, and 15, the relay portions 65 overlap the first connection portions 412 of the first terminals 41 when viewed in the thickness direction z. The relay portions 65 are located on the z1 side in the thickness direction z with respect to the first connection portions 412.

[0077] The two relay portions 66 are individually interposed between the main portion 63 and the two relay portions 65. The two relay portions 66 are located on both outer sides in the second direction y with respect to the plurality of first control terminals 46. In the illustrated example, the relay portion 66 has an extending portion 661. The extending portion 661 is a portion that extends outward in the second direction y toward the z2 side in the thickness direction z.

[0078] The sealing resin 8 covers the multiple first semiconductor elements 10A, the multiple second semiconductor elements 10B, the support substrate 3 (excluding the back surface 302), the second terminals 42, the third terminals 43, and portions of each of the two first terminals 41, the multiple control terminals 45, the control terminal support 48, the first conductive member 5, the second conductive member 6, and the multiple wires 71, 72, and 74. The sealing resin 8 is made of, for example, black epoxy resin. The sealing resin 8 is formed, for example, by molding. The sealing resin 8 has, for example, a dimension in the first direction x of approximately 35 mm to 60 mm, a dimension in the second direction y of approximately 35 mm to 50 mm, and a dimension in the thickness direction z of approximately 4 mm to 15 mm. These dimensions are the sizes of the largest portions along each direction. The sealing resin 8 has a resin main surface 81, a resin back surface 82, and multiple resin side surfaces 831 to 834.

[0079] The resin main surface 81 and the resin back surface 82 are spaced apart in the thickness direction z, as shown in FIGS. 8, 10, and 16. The resin main surface 81 faces the z1 side in the thickness direction z, and the resin back surface 82 faces the z2 side in the thickness direction z. A plurality of control terminals 45 (a plurality of first control terminals 46A to 46E and a plurality of second control terminals 47A to 47D) protrude from the resin main surface 81. As shown in FIG. 9, the resin back surface 82 has a frame shape that surrounds the back surface 302 (the lower surface of the back surface metal layer 33) of the support substrate 3 in a plan view. The back surface 302 of the support substrate 3 is exposed from the resin back surface 82 and is, for example, flush with the resin back surface 82.

[0080] Each of the multiple resin side surfaces 831 to 834 is connected to both the resin main surface 81 and the resin back surface 82 and is sandwiched between them in the thickness direction z. As shown in FIG. 3 and other figures, the resin side surface 831 and the resin side surface 832 are spaced apart in the first direction x. The resin side surface 831 faces the x2 side of the first direction x, and the resin side surface 832 faces the x1 side of the first direction x. Two third terminals 43 protrude from the resin side surface 831, and the second terminal 42, the second terminal 42, and the first terminal 41 protrude from the resin side surface 832. As shown in FIG. 3 and other figures, the resin side surface 833 and the resin side surface 834 are spaced apart in the second direction y. The resin side surface 833 faces the y2 side of the second direction y, and the resin side surface 834 faces the y1 side of the second direction y.

[0081] 3, a plurality of recesses 832a are formed in the resin side surface 832. Each recess 832a is a portion recessed in the first direction x in a plan view. The plurality of recesses 832a are formed between the second terminal 42 and the first terminal 41 in a plan view. The plurality of recesses 832a are provided to increase the creepage distance along the resin side surface 832 between the second terminal 42 and the first terminal 41.

[0082] As shown in FIGS. 3 , 9 to 11 , 14 and 15 , a plurality of recesses 832b are formed in the resin side surface 832. The plurality of recesses 832b are recessed from the resin side surface 832 toward the x2 side in the first direction x. The first terminal portions 411 of the two first terminals 41 and the second terminal portions 421 of the second terminals 42 are exposed from the plurality of recesses 832b. The resin side surface 832 may not be formed with the plurality of recesses 832b, and the first terminal portions 411 and the second connection portions 422 may protrude from the resin side surface 832 toward the x1 side in the first direction x, for example.

[0083] 11 and 18 , the sealing resin 8 has a plurality of second protrusions 852. The second protrusions 852 protrude from the resin main surface 81 in the thickness direction z. The second protrusions 852 overlap the control terminals 45 in a plan view. Each metal pin 452 of the control terminals 45 protrudes from the corresponding second protrusion 852. Each second protrusion 852 has a truncated cone shape. The second protrusion 852 covers the holder 451 and a portion of the metal pin 452 of each control terminal 45.

[0084] Next, a vehicle B1 equipped with the semiconductor device A1 will be described with reference to Fig. 20. The vehicle B1 is, for example, an electric vehicle (EV).

[0085] As shown in Fig. 20, vehicle B1 includes an on-board charger 91, a storage battery 92, and a drive system 93. Power is supplied to the on-board charger 91 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 91 via a wired connection. The on-board charger 91 is configured with a step-up DC-DC converter. The voltage of the power supplied to the on-board charger 91 is stepped up by the converter and then supplied to the storage battery 92. The stepped-up voltage is, for example, 600 V.

[0086] The drive system 93 drives the vehicle B1. The drive system 93 has an inverter 931 and a drive source 932. The semiconductor device A1 constitutes part of the inverter 931. Power stored in the storage battery 92 is supplied to the inverter 931. The power supplied from the storage battery 92 to the inverter 931 is DC power. In addition, unlike the power system shown in FIG. 20 , a step-up DC-DC converter may be further provided between the storage battery 92 and the inverter 931. The inverter 931 converts DC power into AC power. The inverter 931 including the semiconductor device A1 is electrically connected to the drive source 932.

[0087] The drive source 932 includes an AC motor and a transmission. When AC power converted by the inverter 931 is supplied to the drive source 932, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and then rotates the drive shaft of the vehicle B1. This drives the vehicle B1. To drive the vehicle B1, it is necessary to freely control the rotation speed of the AC motor based on information such as the amount of fluctuation in the accelerator pedal. The semiconductor device A1 in the inverter 931 is required to output AC power whose frequency has been appropriately changed to correspond to the required rotation speed of the AC motor.

[0088] Next, the operation of this embodiment will be described.

[0089] 1, 4, and 18, the conduction path Cp formed by the second conductive member 6 and the second terminal 42 is disposed outside the plurality of first control terminals 46 in the second direction y. This allows the second terminal 42 and the plurality of first control terminals 46 to be more appropriately disposed while avoiding interference between the second conductive member 6 and the second terminal 42 and the plurality of first control terminals 46.

[0090] The second conductive member 6 and the second terminal 42 are configured as separate components, which makes it possible to prevent the individual components that configure the conductive path Cp from becoming excessively large.

[0091] Two conduction paths Cp are configured in the semiconductor device A1. The two conduction paths Cp are arranged on both outer sides of the multiple first control terminals 46 in the second direction y, and are paths that bypass the multiple first control terminals 46 to the outside in the second direction y. This allows a larger current to flow between the second terminal 42 and the second conduction member 6 while avoiding interference between the second conductive member 6 and the multiple first control terminals 46 and the second terminal 42.

[0092] 4, 10, and 15, the relay portion 65 overlaps the first connection portion 412 as viewed in the thickness direction z, and is located on the z1 side of the first connection portion 412 in the thickness direction z. This makes it possible to more reliably insulate the first terminal 41 from the second conductive member 6 while preventing the semiconductor device A1 from becoming larger in size as viewed in the thickness direction z.

[0093] The sixth connection portion 61 has two flat portions 611 and two first inclined portions 612. The two first inclined portions 612 are connected to the two flat portions 611 on the x1 side in the first direction x. This makes it possible to prevent the current flowing through the source electrode 12 from concentrating in one place.

[0094] The two flat portions 611 are spaced apart in the second direction y. This allows current to flow reliably through both the two flat portions 611 and the two first inclined portions 612, which is preferable for suppressing current concentration.

[0095] By separating the two flat portions 611 from each other, a gate finger (not shown) of the source electrode 12 can be disposed between them.

[0096] 21 and 22 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals. The configurations of the parts in each embodiment can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0097] 21 shows a semiconductor device according to a second embodiment of the present disclosure. A semiconductor device A2 according to this embodiment differs from the above-described embodiments in the configurations of the second conductive member 6 and the second terminal 42.

[0098] In the present embodiment, the second conductive member 6 and the second terminal 42 are configured as an integral member. That is, the second conductive member 6 and the second terminal 42 are connected to each other without a joint or the like.

[0099] This embodiment also allows for more appropriate arrangement of the second terminal 42 and the plurality of first control terminals 46. As can be understood from this embodiment, the specific configurations of the second conductive member 6 and the second terminal 42 that constitute the conduction path Cp are not limited in any way. The configuration in which the second conductive member 6 and the second terminal 42 are electrically connected is not limited to the configuration in which the second conductive member 6 and the second terminal 42 are conductively joined, as in the semiconductor device A1, but also includes a configuration in which the second conductive member 6 and the second terminal 42 are formed as an integrated member, as in this embodiment.

[0100] 22 shows a semiconductor device according to a third embodiment of the present disclosure. A semiconductor device A3 according to this embodiment differs from the above-described embodiments in the number of conductive paths Cp.

[0101] In the present embodiment, one conduction path Cp is configured by the second terminal 42 and the second conductive member 6. The conduction path Cp in the present embodiment is located on the y1 side in the second direction y with respect to the multiple first control terminals 46. The second conductive member 6 has one seventh connection portion 62, one relay portion 65, and one relay portion 66.

[0102] This embodiment also makes it possible to more appropriately arrange the second terminal 42 and the plurality of first control terminals 46. As can be understood from this embodiment, the number of conduction paths Cp is not limited in any way.

[0103] The semiconductor device and vehicle according to the present disclosure are not limited to the above-described embodiments. The specific configurations of the components of the semiconductor device and vehicle according to the present disclosure can be freely designed in various ways. The present disclosure includes the embodiments described in the following appendices.

[0104] Supplementary Note 1. A semiconductor device comprising: a first conductive portion; a second conductive portion; one or more first semiconductor elements having a first electrode that is a positive electrode of a current path to be switched, a second electrode that is a negative electrode, and a third electrode for switching a conduction state between the first electrode and the second electrode; one or more second semiconductor elements having a first electrode that is a positive electrode of a current path to be switched, a second electrode that is a negative electrode, and a third electrode for switching a conduction state between the first electrode and the second electrode; two first terminals; a second terminal; a third terminal; a first conductive member; a second conductive member; a plurality of first control terminals; a plurality of second control terminals; and a sealing resin, wherein the first conductive portion has a first main surface facing a first side in a thickness direction, and the second conductive portion has a second main surface facing the first side in the thickness direction, and in a first direction orthogonal to the thickness direction, the first conductive portion is arranged on a first side and the second conductive portion is arranged on a second side, the first electrode of the first semiconductor element is conductively bonded to the first main surface, the first electrode of the second semiconductor element is conductively bonded to the second main surface, the plurality of first control terminals are located on the first side of the first semiconductor element in the first direction, are spaced apart from each other in a second direction perpendicular to the first direction and the thickness direction, and protrude toward the first side in the thickness direction with respect to the first conductive portion, the two first terminals are spaced apart from each other in the second direction, are connected to the first main surface, and protrude toward the first side in the first direction beyond the plurality of first control terminals, the second terminal is located between the two first terminals in the second direction and protrudes toward the first side in the first direction beyond the plurality of first control terminals, the third terminal is connected to the second main surface, the first conductive member is conductively bonded to the second electrode and the second main surface of the first semiconductor element, and the second conductive member is electrically connected to the second electrode and the second terminal of the second semiconductor element, the second terminal and the second conductive member form a conductive path located outside the plurality of first control terminals in the second direction.Supplementary Note 2. The semiconductor device according to Supplementary Note 1, wherein the first terminal has a first terminal portion exposed from the sealing resin and a first connection portion conductively bonded to the first main surface. Supplementary Note 3. The semiconductor device according to Supplementary Note 2, wherein the second terminal has a second terminal portion exposed from the sealing resin. Supplementary Note 4. The semiconductor device according to Supplementary Note 3, wherein the third terminal has a third terminal portion exposed from the sealing resin and a third connection portion conductively bonded to the second main surface. Supplementary Note 5. The semiconductor device according to Supplementary Note 3 or 4, wherein the first conductive member has a fourth connection portion conductively bonded to the second electrode of the first semiconductor element and a fifth connection portion conductively bonded to the second main surface. Supplementary Note 6. The semiconductor device according to Supplementary Note 5, comprising a plurality of the first semiconductor elements arranged spaced apart from each other in the second direction, and the first conductive member has a plurality of the fourth connection portions individually conductively bonded to the second electrodes of the plurality of first semiconductor elements. Supplementary Note 7. The semiconductor device according to Supplementary Note 6, wherein the first conductive member further has a main portion interposed between the plurality of fourth connection portions and the fifth connection portion. Supplementary Note 8. The semiconductor device according to any of Supplements 3 to 7, further comprising a first support portion interposed between the plurality of first control terminals and the first conductive portion. Supplementary Note 9. The semiconductor device according to any of Supplements 3 to 8, wherein the second terminal and the second conductive member are separate from each other and are conductively joined. Supplementary Note 10. The semiconductor device according to Supplementary Note 9, wherein the second terminal has a second connection portion extending from the second terminal portion to the second side in the first direction, and the second connection portion and the second conductive member are conductively joined. Supplementary Note 11. The semiconductor device according to Supplementary Note 10, wherein the second conductive member has a sixth connection portion conductively joined to the second electrode of the second semiconductor element. Supplementary Note 12. The semiconductor device according to claim 11, further comprising: a plurality of the second semiconductor elements arranged apart from each other in the second direction, wherein the second conductive member has a plurality of the sixth connection portions individually conductively joined to the second electrodes of the plurality of the second semiconductor elements. Appendix 13. The semiconductor device according to claim 12, further comprising: a seventh connection portion conductively joined to the second connection portion; and a main portion interposed between the sixth connection portion and the seventh connection portion.Supplementary Note 14. The semiconductor device according to Supplementary Note 13, wherein the second terminal and the second conductive member form two of the conductive paths located on both outer sides of the plurality of first control terminals in the second direction. Supplementary Note 15. The semiconductor device according to Supplementary Note 14, wherein the second conductive member has two of the seventh connection portions and a plurality of relay portions that individually relay the main portion and the two seventh connection portions. Supplementary Note 16. The semiconductor device according to any of Supplements 3 to 8, wherein the second terminal and the second conductive member are an integral member. Supplementary Note 17. A vehicle comprising: a drive source; and the semiconductor device according to any of Supplements 1 to 16, wherein the semiconductor device is electrically connected to the drive source.

[0105] A1, A2: Semiconductor device B1: Vehicle 3: Support substrate 5: First conductive member 6: Second conductive member 8: Sealing resin 10A: First semiconductor element 10B: Second semiconductor element 11: Gate electrode 12: Source electrode 13: Source sense electrode 15: Drain electrode 19A: First conductive bonding material 19B: Second conductive bonding material 31: Insulating layer 32: First metal layer 32A: First conductive portion 32B: Second conductive portion 33: Back surface metal layer 41: First terminal 42: Second terminal 43: Third terminal 45: Control terminal 46, 46A, 46B, 46C, 46D, 46E: First control terminal 47A, 47B, 47C, 47D, 47E: Second control terminal 48: Control terminal support 48A: First support portion 48B: Second support portion 49: Bonding material 51: Fourth connecting portion 52: Fifth connecting portion 53: Main portion 59: Conductive bonding material 61: Sixth connecting portion 62: Seventh connecting portion 63: Main portion 64: Step portion 66: Third path portion 69: Conductive bonding material 71, 72, 74: Wire 81: Resin main surface 82: Resin back surface 91: On-board charger 92: Storage battery 93: Drive system 101: Element main surface 102: Element back surface 301A: First main surface 301B: Second main surface 302: Back surface 411: First terminal portion 412: First connecting portion 413: First step portion 421: Second terminal portion 422: Second connecting portion 431: Third terminal portion 432: Third connecting portion 451: Holder 452: Metal pin 459: Conductive bonding material 481: Insulating layer 482: First metal layer 482A: First portion 482B: Second portion 482C: Third portion 482E: Fifth portion 483: Second metal layer 514: First opening 602: First step portion 603: Second step portion 611: Flat portion 612: First inclined portion 831: Resin side surface 832: Resin side surface 832a, 832b: Recessed portions 833, 834: Resin side surface 852: Second protrusion 931: Inverter 932: Driving source Cp: Conduction path Tb: Thickness x: First direction y: Second direction z: Thickness direction

Claims

1. First conductive part and The second conductive part and One or more first semiconductor elements having a first electrode which is the positive electrode of the current path to be switched, a second electrode which is the negative electrode, and a third electrode for switching the conductivity state between the first electrode and the second electrode, A second semiconductor element having a first electrode which is the positive electrode of the current path to be switched, a second electrode which is the negative electrode, and a third electrode for switching the conductivity state between the first electrode and the second electrode, Two first terminals, The second terminal and, The third terminal and First conductive member and The second conductive member, Multiple first control terminals, Multiple second control terminals, A sealing resin is provided, The first conductive portion has a first main surface facing the first side in the thickness direction, The second conductive portion has a second main surface facing the first side in the thickness direction, In a first direction perpendicular to the thickness direction, the first conductive portion is arranged on the first side, and the second conductive portion is arranged on the second side. The first electrode of the first semiconductor element is electrically connected to the first main surface. The first electrode of the second semiconductor element is electrically connected to the second main surface. The plurality of first control terminals are located on the first side with respect to the first semiconductor element in the first direction, are spaced apart from each other in a second direction perpendicular to the first direction and the thickness direction, and protrude toward the first side in the thickness direction with respect to the first conductive portion. The two first terminals are arranged apart from each other in the second direction, each connected to the first main surface, and protrude further toward the first side in the first direction than the plurality of first control terminals. The second terminal is located between the two first terminals in the second direction and protrudes further toward the first side in the first direction than the plurality of first control terminals. The third terminal is connected to the second main surface, The first conductive member is electrically connected to the second electrode and the second main surface of the first semiconductor element. The second conductive member is electrically connected to the second electrode and the second terminal of the second semiconductor element. A semiconductor device comprising a second terminal and a second conductive member, which together form a conductive path located outside the plurality of first control terminals in the second direction.

2. The semiconductor device according to claim 1, wherein the first terminal has a first terminal portion exposed from the sealing resin and a first connection portion electrically bonded to the first main surface.

3. The semiconductor device according to claim 2, wherein the second terminal has a second terminal portion exposed from the sealing resin.

4. The semiconductor device according to claim 3, wherein the third terminal has a third terminal portion exposed from the sealing resin and a third connecting portion electrically bonded to the second main surface.

5. The semiconductor device according to claim 3 or 4, wherein the first conductive member has a fourth connecting portion electrically joined to the second electrode of the first semiconductor element and a fifth connecting portion electrically joined to the second main surface.

6. The system comprises a plurality of the first semiconductor elements arranged apart from each other in the second direction, The semiconductor device according to claim 5, wherein the first conductive member has a plurality of fourth connecting portions that are electrically connected to the second electrodes of the plurality of first semiconductor elements.

7. The semiconductor device according to claim 6, wherein the first conductive member further has a main portion interposed between the plurality of fourth connection portions and the fifth connection portion.

8. The semiconductor device according to claim 3 or 4, further comprising a first support portion interposed between the plurality of first control terminals and the first conductive portion.

9. The semiconductor device according to claim 3 or 4, wherein the second terminal and the second conductive member are separate and electrically connected to each other.

10. The second terminal has a second connecting portion that extends from the second terminal portion to the second side in the first direction, The semiconductor device according to claim 9, wherein the second connecting portion and the second conductive member are electrically connected.

11. The semiconductor device according to claim 10, wherein the second conductive member has a sixth connecting portion electrically bonded to the second electrode of the second semiconductor element.

12. The system comprises a plurality of the second semiconductor elements arranged apart from each other in the second direction, The semiconductor device according to claim 11, wherein the second conductive member has a plurality of sixth connecting portions that are electrically connected to the second electrodes of the plurality of second semiconductor elements.

13. The semiconductor device according to claim 12, wherein the second conductive member further comprises a seventh connecting portion electrically joined to the second connecting portion, and a main portion interposed between the sixth connecting portion and the seventh connecting portion.

14. The semiconductor device according to claim 13, wherein the second terminal and the second conductive member constitute two conductive paths located on both sides of the plurality of first control terminals in the second direction.

15. The semiconductor device according to claim 14, wherein the second conductive member has two seventh connection portions and a plurality of relay portions that individually relay the main portion and the two seventh connection portions.

16. The semiconductor device according to claim 3 or 4, wherein the second terminal and the second conductive member are an integrated component.

17. Power source and A semiconductor device according to any one of claims 1 to 3, comprising: The aforementioned semiconductor device is electrically connected to the aforementioned drive source, and the vehicle.