Composite component

Abstract

This composite component has at least one electronic component incorporated therein and comprises: a Si base layer that has a first main surface and a second main surface facing the first main surface; a rewiring layer that is disposed on the first main surface; a through-Si via that is electrically connected to the rewiring layer and that penetrates the Si base layer; an electronic component that is electrically connected to the through-Si via and is disposed on the second main surface; a side wall portion that surrounds the electronic component and that is disposed so as to form a recess together with the Si base layer; and a resin sealing portion that seals the electronic component.

Description

Composite Parts

[0001] The present disclosure relates to composite parts.

[0002] A conventional package combining multiple electronic components is, for example, the device shown in FIG. 4F of Japanese Patent Laid-Open Publication No. 2019-125779 (Patent Document 1). This device (400F) includes a redistribution layer (306), a first mold layer (316) disposed on the redistribution layer (306), and a second mold layer (324) disposed on the first mold layer (316). Dies (318, 320) encapsulated in the second mold layer (324) are connected to a bridge die (310) encapsulated in the first mold layer (316) via electrical connection portions (312) and to the redistribution layer (306) via electrical connection portions (314).

[0003] Japanese Patent Application Laid-Open No. 2019-125779

[0004] However, the present inventor has found that in the device described above, cracks may occur and moisture may enter from the outside, causing a decrease in the reliability of the device.

[0005] Therefore, an object of the present disclosure is to provide a composite part with superior reliability.

[0006] The present inventors conducted extensive research to solve the above-mentioned problems and discovered that cracks occur because the strength of the entire device is insufficient and because the exposed areas of the first and second mold layers, which are relatively hygroscopic, are large. Based on this technical knowledge, the present disclosure has been conceived, which provides sidewall portions at both ends to increase the strength of the entire device and reduce exposure of the first and second mold layers at both ends. That is, the present disclosure includes the following embodiments.

[0007] In order to solve the above-described problems, a composite component that is one embodiment of the present disclosure is a composite component incorporating one or more electronic components, and includes: a Si base layer having a first main surface and a second main surface opposite the first main surface; a redistribution layer disposed on the first main surface; a through-Si via electrically connected to the redistribution layer and penetrating the Si base layer; an electronic component electrically connected to the through-Si via and disposed on the second main surface; a sidewall portion that surrounds the electronic component and is disposed so as to form a recess together with the Si base layer; and a resin sealing portion that seals the electronic component.

[0008] According to the embodiment, the composite component includes a sidewall portion that surrounds the electronic component and is arranged to form a recess together with the Si base layer. This improves the strength of the entire composite component. Furthermore, because the sidewall portion is arranged at both ends of the composite component in a cross-sectional view, the resin encapsulation portion is no longer exposed at both end faces of the composite component, reducing the exposed area of ​​the resin encapsulation portion. This prevents moisture from penetrating from the outside into the composite component. As a result, the composite component according to this embodiment has superior reliability.

[0009] A composite part according to an embodiment of the present disclosure has superior reliability.

[0010] FIG. 1 is a plan view schematically showing a composite component according to a first embodiment. FIG. 1 is a cross-sectional view taken along line II of FIG. 1 . FIG. 2 is an enlarged view of section A of FIG. 2 . FIG. 3 is an enlarged view of section B of FIG. 2 . FIG. 3 is a cross-sectional view showing a cavity in the composite component according to the first embodiment. FIG. 4 is an explanatory view illustrating a manufacturing method of the composite component according to the first embodiment. FIG. 5 is an explanatory view illustrating a manufacturing method of the composite component according to the first embodiment. FIG. 6 is an explanatory view illustrating a manufacturing method of the composite component according to the first embodiment. FIG. 7 is an explanatory view illustrating a manufacturing method of the composite component according to the first embodiment. FIG. 8 is an explanatory view illustrating a manufacturing method of the composite component according to the first embodiment. FIG. 9 is an explanatory view illustrating a manufacturing method of the composite component according to the first embodiment. FIG. 10 is an explanatory view illustrating a manufacturing method of the composite component according to the first embodiment.

[0011] A composite component and its mounting structure, which are one aspect of the present disclosure, will be described in detail below with reference to the illustrated embodiments. Note that the drawings include some schematic illustrations and may not reflect actual dimensions and proportions. The dimensions (more specifically, thickness, etc.) of the components within the composite component were measured based on SEM images taken with a scanning electron microscope (SEM). The dimensions were obtained as the average of multiple measurements (number of measurements n≧3).

[0012] In this specification, the term "above" (which is added immediately after the name of a component and indicates the placement location of the component) does not simply mean vertically above the component, but means that the component is placed in contact with the component. For example, in FIG. 1 , the vertical direction is parallel to the Z direction, the reverse Z direction is the vertically downward direction, and the forward Z direction is the vertically upward direction. When the redistribution layer 120 is placed on the first major surface 112a (of the Si base layer 112), this means that the redistribution layer 120 is placed so as to be in contact with the first major surface 112a (lower surface). Furthermore, when the electronic component 111 is placed on the second major surface 112b (of the Si base layer 112), this means that the electronic component 111 is placed so as to be in contact with the second major surface 112b (upper surface).

[0013] First Embodiment: Composite Component A composite component according to a first embodiment has one or more built-in electronic components. In this embodiment, a composite component having two built-in electronic components will be described as an example.

[0014] The composite component according to the first embodiment is a composite component incorporating two electronic components, and includes: a Si base layer having a first main surface and a second main surface opposite the first main surface; a redistribution layer disposed on the first main surface; a through-Si via electrically connected to the redistribution layer and penetrating the Si base layer; an electronic component electrically connected to the through-Si via and disposed on the second main surface; a sidewall portion surrounding the electronic component and disposed so as to form a recess together with the Si base layer; and a resin sealing portion that seals the electronic component.

[0015] [Mechanism of Action] The composite component according to the first embodiment has superior reliability. The reason for this is presumed to be as follows: The composite component according to the first embodiment includes a sidewall portion that surrounds the electronic component and is arranged so as to form a recess together with the Si base layer. This improves the strength of the entire composite component. Furthermore, because the sidewall portions are arranged at both ends of the composite component in a cross-sectional view, the resin encapsulation portion is no longer exposed at both end faces of the composite component, reducing the exposed area of ​​the resin encapsulation portion. This suppresses the penetration of moisture from the outside into the composite component. For these reasons, the composite component according to this embodiment has superior reliability.

[0016] Furthermore, in the manufacturing method of a composite component, when a mother assembly in which multiple composite components are connected is used, the composite component is cut into individual pieces at the sidewalls located at both ends of the composite component, which makes it less likely that the cut surfaces will be uneven due to, for example, the dropout of filler, compared to when the composite component is cut at the resin-sealed portion, thereby improving the manufacturing efficiency of the composite component.

[0017] [Configuration of Composite Component] The configuration of the composite component according to the first embodiment will be described with reference to Figs. 1, 2, 3, and 4. Fig. 1 is a plan view schematically showing the composite component according to the first embodiment of the present disclosure. Fig. 2 is a cross-sectional view taken along line II in Fig. 1. Fig. 3 is an enlarged view of part A in Fig. 2. Fig. 4 is an enlarged view of part B in Fig. 2.

[0018] As shown in Figures 1 and 2, the composite component 1 according to the first embodiment has a generally rectangular parallelepiped shape with adjacent surfaces connected generally perpendicularly. The composite component 1 incorporates two electronic components 111. In Figure 2, the direction parallel to the thickness of the composite component 1 is the Z direction, with the forward Z direction representing the upper side and the reverse Z direction representing the lower side. The direction perpendicular to the Z direction in the cross section of the composite component 1 shown in Figure 2 is the X direction. The direction perpendicular to the cross section of the composite component 1 shown in Figure 2 is the Y direction.

[0019] The composite component 1 includes an electronic component layer 110 and a rewiring layer 120 bonded to the lower surface of the electronic component layer 110 .

[0020] (Electronic Component Layer) The bottom surface of the electronic component layer 110 is bonded (joined) to the rewiring layer 120. The electronic component layer 110 has two electronic components 111, a Si base layer 112, a sidewall portion 113, a resin sealing portion 114, an adhesive layer 115, and a through-Si via 117.

[0021] -Electronic Components- Two electronic components 111 are arranged within the electronic component layer 110. The electronic components 111 are arranged on the second main surface 112b of the Si base layer 112. The electronic component 111 has an electronic component body 111c having a first surface 111a and a second surface 111b facing each other, a plurality of component electrodes 111d arranged on the first surface 111a, and insulating portions 111e arranged between the plurality of component electrodes 111d. The electronic components 111 are supported on the Si base layer 112 via an adhesive layer 115. The electronic components 111 are sealed within the electronic component layer 110 by a resin sealing portion 114. The component electrodes 111d of the electronic components 111 are electrically connected to the rewiring layer 120 via through-silicon vias 117. When multiple electronic components 111 are present, the electronic components 111 may be of the same type or different types.

[0022] The two electronic components 111 are both arranged in the electronic component layer 110 such that their first surfaces 111a are positioned closer to the rewiring layer 120 than their second surfaces 111b. These two electronic components 111 are both arranged in the same direction and connected to the rewiring layer 120. As such, the composite component 1 has simple wiring, which allows for excellent manufacturing efficiency of the composite component.

[0023] The electronic component 111 is, for example, an electronic component in which one or more elements are integrated in a material similar to the material that constitutes the Si base layer 112. The electronic component 111 is, for example, an active component (more specifically, a CPU, a GPU, an LSI, etc.) or a passive component (more specifically, a capacitor, a resistor, an inductor, etc.).

[0024] The electronic component body 111c includes, for example, a ceramic or semiconductor material (more specifically, silicon, etc.).

[0025] The component electrode 111d is electrically connected to the rewiring layer 120 only through the through-silicon via 117. Thus, the via wiring electrically connecting the component electrode 111d to the rewiring layer 120 is composed only of the through-silicon via 117, and therefore does not include (does not require) a bump (e.g., a solder bump). Therefore, the composite component 1 according to this embodiment can further reduce the parasitic impedance caused by the via wiring. This also improves the electronic characteristics of electronic devices that use the composite component 1. Furthermore, because the wiring length can be shortened compared to conventional devices, the thickness of the composite component 1 can be reduced, enabling the composite component 1 to be made smaller, thinner, and lower in height.

[0026] The component electrode 111d is made of a conductive material such as Cu, Ni, Sn, Al, or an alloy containing any of these. Among these, the conductive material is preferably the same material as that of the through-silicon via 117. The component electrode 111d has a thickness of, for example, 1 μm to 30 μm, preferably 5 μm or less. The component electrode 111d can be thinned to a thickness of 1 to 5 μm. The thickness of the component electrode 111d can be, for example, 1 / 4 to 1 / 6 times the thickness of the electronic component body 111c.

[0027] The insulating portion 111e functions as a layer that electrically insulates the component electrodes 111d. The thickness of the insulating portion 111e is, for example, 1 to 30 μm, preferably 5 μm or less. The component electrodes 111d can be thinned to a thickness of 1 to 5 μm. The thickness of the insulating portion 111e can be, for example, 1 / 4 to 1 / 6 times the thickness of the electronic component body 111c. The thickness of the insulating portion 111e may be the same as that of the component electrodes 111d. In such a case, the lower surfaces of the insulating portion 111e and the component electrodes 111d are flush with each other. When the lower surfaces of the insulating portion 111e and the component electrodes 111d are flush with each other, the thickness of the adhesive layer 115 can be reduced, thereby enabling the composite component 1 to be made smaller and thinner.

[0028] -Si Base Layer- The Si base layer 112 has a first main surface 112a and a second main surface 112b opposite to the first main surface 112a. The Si base layer 112 supports two electronic components 111 on the second main surface 112b via an adhesive layer 115, and is connected to the redistribution layer 120 on the first main surface 112a. The Si base layer 112 is composed substantially of Si.

[0029] The thickness of the Si base layer 112 is, for example, 150 μm or less, preferably 50 μm or less, and more preferably 30 μm or less. The reason why the thickness of the Si base layer 112 can be made extremely thin is that in the manufacturing method of the composite component 1 described below, a Si support 140 is bonded to the Si base layer 112 to reinforce its strength. Therefore, even if the Si base layer 112 is ground and thinned, damage (e.g., cracking) of the Si base layer 112 due to insufficient strength is unlikely to occur (see FIG. 6F ). The reinforcement provided by the Si support 140 makes it possible to manufacture the composite component 1. Because the thickness of the Si base layer 112 can be made extremely thin compared to conventional methods, the length of the via wiring (i.e., the through-Si vias 117) electrically connecting the component electrodes 111d of the two electronic components 111 to the rewiring layer 120 can be shortened. This reduces the parasitic impedance caused by the via wiring, improving the electrical characteristics of electronic devices using the composite component 1.

[0030] The electronic component 111 is mounted on the second main surface 112b of the Si base layer 112. The area (mounting area) on the second main surface 112b where the electronic component 111 can be mounted is a flat area R of the second main surface 112b in the cross-sectional view shown in FIG. ２ The region on the second main surface 112b where it is difficult to mount the electronic component 111 (the difficult-to-mount region) is a curved region R １ The curved region R １ is a region from the inner surface 113c of the side wall portion 113 to the flat second main surface 112. １ From the viewpoint of increasing the mounting area and enhancing integration, the length is preferably 100 μm or less, more preferably 80 μm or less, even more preferably 60 μm or less, and particularly preferably 50 μm or less.

[0031] -Sidewall- The sidewall 113 is disposed on the second main surface 112b of the Si base layer 112 so as to surround the two electronic components 111. The sidewall 113 is disposed at both ends of the electronic component layer 110 so as to surround the entire two electronic components 111. The sidewall 113 is integrated with the Si base layer 112 in a cross-sectional view. This integration further improves the strength of the entire composite component 1. The thickness of the sidewall 113 is, for example, 90 to 130 μm. The sidewall 113 is, for example, substantially composed of Si.

[0032] 4 , an obtuse angle (more specifically, an angle greater than 90°) is formed between the inner surface 113c of the sidewall portion 113 and the second main surface 112b of the Si base layer 112. When the inner surface 113c and the second main surface 112b form an obtuse angle, internal stress (which may occur during the manufacturing and operation of the composite component 1) is less likely to concentrate, making it less likely for cracks to occur in the composite component 1. This further improves the reliability of the composite component 1.

[0033] Angle θ between the inner surface 113c and the second main surface 112b １ In this specification, the term "ZX cross section" refers to a cross section at a magnification of 700 times (SEM image taken at a magnification of 700 times using a scanning electron microscope ("FlexSEM" manufactured by Hitachi High-Technologies Corporation)) where the substantially linear inner surface 113c and the second main surface 112b meet at a bending point (connection point, joint point) I. １ When the second main surface 112b is a curved surface, the angle between the inner surface 113c and the second main surface 112b is the bending point I. １ The tangent line T that contacts the inner surface 113c and the substantially linear inner surface 113c form a bending point I. １ The ZX cross section of the composite part 1 for determining the obtuse angle is formed by cutting the composite part 1, which has a substantially rectangular shape in plan view as shown in FIG. 1, along a plane (II cross section in FIG. 1) that includes a point O where diagonal lines (broken lines in FIG. 1) intersect and is parallel to the side surface of the composite part 1.

[0034] Angle θ between the inner surface 113c and the second main surface 112b １From the viewpoint of suppressing local concentration of internal stress and suppressing the occurrence of cracks in the composite part 1, the angle is preferably 100° or more, more preferably 120° or more, and even more preferably 130° or more.

[0035] Angle θ between the inner surface 113c and the second main surface 112b １ This can be achieved by supplying the etching gas non-uniformly to the object to be etched, as will be described in detail later in the method for manufacturing a composite part.

[0036] Angle θ between the inner surface 113c and the second main surface 112b １ From the viewpoint of increasing the mountable area on the second main surface 112b of the electronic component 111, the angle is preferably 130° or less, more preferably 120° or less, and even more preferably 100° or less.

[0037] The ratio of the width between the opposing inner surfaces 113c of the recess to the width of the sidewall 113 is 10 to 1000. When this width ratio is 10 or more, the proportion occupied by the sidewall 113 is above a certain level, thereby increasing the rigidity of the composite component 1. On the other hand, when this width ratio is 1000 or less, the area (mounting area) on which the electronic component 111 can be mounted is above a certain level, thereby enabling further integration.

[0038] The width of the side wall 113 is the length between the inner surface 113c and the outer surface of the side wall 113, on a line (dash-dotted line in FIG. 1) that includes a point O where the diagonal line (dashed line in FIG. 1) intersects in the plan view shown in Fig. 1 and is parallel to the side surface of the composite part 1. The width between opposing inner surfaces 113c of the recess is the length between one inner surface 113c and the inner surface 113c that faces the other inner surface 113c, on a line (dash-dotted line in FIG. 1) that includes a point O where the diagonal line (dashed line in FIG. 1) intersects in the plan view shown in Fig. 1 and is parallel to the side surface of the composite part 1.

[0039] Resin Sealing Portion The resin sealing portion 114 seals the two electronic components 111. The resin sealing portion 114 contains, for example, a resin (more specifically, an epoxy resin or the like) and a filler (more specifically, a silica filler or the like), and can integrate the two electronic components 111 with the resin. Because the two electronic components 111 can be integrated with the resin, the two electronic components 111 can be arranged in the electronic component layer 110 even if the two electronic components 111 have different dimensions and shapes. This allows for a high degree of design freedom, and two or more electronic components 111 can be combined depending on the application. For example, the composite component 1 can incorporate different types of electronic components 111.

[0040] - Adhesion Layer - The adhesion layer 115 bonds the two electronic components 111 to the second main surface 112b of the Si base layer 112. In this specification, the thickness of the adhesion layer 115 refers to the thickness in the Z direction from the lower surface of the component electrode 111d to the second main surface 112b of the Si base layer 112. The thickness of the adhesion layer 115 is, for example, 4 to 6 μm.

[0041] -Through-Si Via- The through-Si via 117 penetrates the Si base layer 112 (and the adhesive layer 115) to electrically connect the component electrode 111d and the redistribution layer 120. The through-Si via 117 has a through-Si via body 117a and an extension 117b. The through-Si via body 117a is electrically connected to the redistribution layer 120 and penetrates the Si base layer 112. The extension 117b is electrically connected to the through-Si via body 117a, extends from the second main surface 112b of the Si base layer 112, penetrates the adhesive layer 115, and electrically connects to the component electrode 111d. In this way, the via wiring electrically connecting the component electrode 111d to the redistribution layer 120 is composed only of the through-Si via 117, and therefore does not include (does not require) a bump (e.g., a solder bump). Therefore, the composite component 1 according to this embodiment can further reduce the parasitic impedance caused by the via wiring. This also improves the electronic characteristics of electronic devices that use the composite component 1. Furthermore, since the wiring length can be shorter than before, the thickness of the composite component 1 can be reduced, allowing the composite component 1 to be made smaller, thinner, and lower-profile. The length of the via wiring (i.e., the length of the through-silicon via 117 in the stacking direction) is, for example, 3 μm to 36 μm. Furthermore, when the (XY) cross-sectional shape of the through-silicon via 117 is approximately circular, its (XY) cross-sectional diameter (diameter) is, for example, 1 to 20 μm.

[0042] In Fig. 2, the through Si via 117 is substantially linear in the stacking direction. The cross-sectional shape of the through Si via 117 in the ZX plane is substantially rectangular in Fig. 2. The (XY) cross-sectional shape of the through Si via 117 in the XY plane is, for example, substantially circular, substantially polygonal, or substantially polygonal with rounded corners. A seed layer and a barrier layer may be provided between the through Si via 117 and the resin sealing portion 114 and the adhesive layer 115.

[0043] (Redistribution Layer) The redistribution layer 120 is disposed on the first main surface 112a of the Si base layer 112. The redistribution layer 120 is a multilayer wiring layer (sheet or substrate). The redistribution layer 120 has wiring (conductive wiring) 120b and a dielectric film 120a substantially composed of an inorganic material (inorganic insulating material). Note that although the dielectric film 120a and wiring 120b are not shown in the redistribution layer 120 in FIG. 3, the redistribution layer 120 is composed of a plurality of dielectric films 120a and wiring 120b stacked together. For example, a plurality of dielectric films 120a and wiring 120b shown in FIG. 6L, which will be described later, are stacked together to form the redistribution layer 120 shown in FIG. 6M, which will be described later.

[0044] The wiring 120b has conductive vias. The conductive vias electrically connect the wiring between different layers in the redistribution layer 120. The wiring 120b includes a conductive material. Examples of conductive materials include Cu, Ag, and Au, as well as alloys containing these, with Cu being preferred. The redistribution layer 120 can have multiple layers, for example, two or more layers of wiring 120b and one or more layers of dielectric film 120a. The thickness of the redistribution layer 120 is calculated by multiplying the thickness of one layer of wiring 120b and dielectric film 120a that constitute the redistribution layer 120 by the total number of layers in the redistribution layer 120 (unit: μm). Note that the thickness of one layer of wiring 120b does not include the thickness of the conductive vias.

[0045] The dielectric film 120a is made of an inorganic insulating material, such as silicon oxide (SiO), silicon nitride (SiN, SiN), and silicon carbonitride (SiCN). When the dielectric film 120a is made of an inorganic insulating material, the wiring width can be reduced to approximately 1 / 10 of that of a dielectric film made of an organic insulating material. This allows the composite component 1 to be further miniaturized and thinned.

[0046] The dielectric film 120a may be a multi-component film containing two or more components, or a multi-layer film in which multiple layers are formed for each component.

[0047] [Method of Manufacturing Composite Component] An example of a method of manufacturing the composite component 1 according to the first embodiment will be described. The method of manufacturing the composite component 1 includes, for example, a cavity forming step of forming a recessed cavity having a Si base layer and a lattice-shaped sidewall portion arranged on the Si base layer, an electronic component bonding step of bonding one or more electronic components to the bottom surface of the cavity, an electronic component sealing step of sealing the one or more electronic components with resin to form a resin-sealed portion, a Si base layer thinning step of thinning the Si base layer, a through-hole forming step of forming a through-hole in the thinned Si base layer to expose a portion of the electronic component, a through-Si via forming step of forming a through-Si via in the through-hole, and a rewiring layer forming step of forming a rewiring layer.

[0048] The method for manufacturing the composite component 1 may further include an insulating portion forming step of forming insulating portions between component electrodes of the electronic component; a resin sealing portion thinning step of thinning the resin sealing portion; a Si support laminating step of laminating a Si support to the resin sealing layer; a dielectric film forming step of forming a dielectric film having a predetermined pattern on the Si base layer; an operation checking step of checking the operation of the composite component; and a dicing step of singulating the composite component by dicing.

[0049] Specifically, an example of a method for manufacturing the composite component 1 will be described with reference to FIGS. 9A to 9B and 6A to 6N. FIGS. 9A to 9B and 6A to 6N are diagrams for explaining the method for manufacturing the composite component 1. The method for manufacturing the composite component 1 according to the first embodiment includes an insulating portion forming step, a cavity forming step, an electronic component bonding step, an electronic component sealing step, a resin sealing portion thinning step, a Si support bonding step, a Si base layer thinning step, a dielectric film forming step, a through-hole forming step, a Si through-via forming step, a rewiring layer forming step, an operation checking step, and a dicing step. In this manufacturing method, a mother integrated body in which composite components 1 are integrated is produced from the cavity forming step to the operation checking step.

[0050] (Insulating Portion Forming Process) In the insulating portion forming process, insulating portions 111e are formed between the component electrodes 111d of the electronic component 111. Specifically, in the insulating portion forming process, a resin-containing coating film is formed and then planarized to form the insulating portions 111e. A solution containing resin and a solvent is applied using a spin coating method to form the coating film. Here, the lowest portion of the coating film is higher than the highest portion of the component electrodes 111d. In other words, the coating film is formed so that all of the component electrodes 111d are completely buried in the coating film. As shown in FIG. 9A , the coating layer is dried to form the insulating portions 111e. Before the subsequent planarization process, the insulating portions 111e preferably completely cover the component electrodes 111d.

[0051] 9B , the surfaces of the electrodes 111 d and the insulating portions 111 e are polished and flattened using, for example, a surface planer, a chemical mechanical polisher (CMP), and a grinder, to form the insulating portions 111 e between the electrodes 111 d, thereby exposing the top surfaces of the electrodes 111 d and making the top surfaces of the electrodes 111 d and the insulating portions 111 e flush with each other.

[0052] (Cavity Forming Process) In the cavity forming process, a recessed cavity having a Si base layer 112 and lattice-shaped sidewalls 113 arranged on the Si base layer 112 is formed. Specifically, in the cavity forming process, a Si wafer is first prepared. A mask covering the areas corresponding to the sidewalls 113 in a plan view is formed on the main surface of the Si wafer. After dry etching (more specifically, reactive ion etching (RIE) and sputter etching, etc.) is performed in this state, the mask is removed. As a result, as shown in FIG. 6A , a recessed cavity is formed having the Si base layer 112, a substantially rectangular bottom surface (in a plan view) arranged on the Si base layer 112, and sidewalls 113 arranged in a lattice shape so as to surround the substantially rectangular bottom surface. Because the recessed cavity is formed by removing a portion thereof by etching, the sidewalls 113 and the Si base layer 112 are integrated. The depth of the cavity (the length in the Z direction from the upper surface of the resin sealing portion 114 that is flush with the sidewall portion 113 to the second main surface 112b of the Si base layer 112) is, for example, 200 μm, which is greater than or equal to the thickness of the electronic component 111.

[0053] Here, the inner surface 113c of the sidewall portion 113 and the second main surface 112b (bottom surface) of the Si base layer 112 meet at a bending point I. １ The obtuse angle can be achieved by employing a dry etching method and supplying an etching gas non-uniformly to the etching target (Si wafer). Here, non-uniform supply of etching gas refers to supplying less etching gas near the boundary between the mask and the opening in the mask than to the openings other than the boundary. Such non-uniform supply of etching gas can be controlled, for example, by increasing the pressure of the etching gas compared to the pressure of the etching gas used in normal etching.

[0054] The shape of the Si wafer may be, but is not limited to, a flat cylindrical shape when viewed from above in a plan view. When the Si wafer has a flat cylindrical shape, the thickness of the Si wafer is, for example, 775 μm (Si wafer diameter φ300 mm), 725 μm (φ200 mm), 675 μm (φ150 mm), or 525 μm (φ100 mm). The cavity formation process may be performed before the insulating portion formation process. Both the Si base layer 112 and the sidewall portion 113 are substantially composed of Si. Note that "flat" refers to a small aspect ratio (the ratio of the height to the diameter of the circle in the cylindrical shape).

[0055] (Example) Figure 5 is a cross-sectional view showing a cavity (in which the sidewall portion 113 and the Si base layer 112 are integrated) formed in the cavity formation step of the manufacturing method of the composite part 1. Figure 5 is a scanning electron microscope image of the cut surface of the cavity (an SEM image taken at a magnification of 700 times using a scanning electron microscope (FlexSEM manufactured by Hitachi High-Technologies Corporation). This cut surface includes the intersection of the diagonals of the approximately rectangular bottom surface of the cavity in a plan view, and was formed by cutting along a plane parallel to the surface to be cut in the dicing step. As shown in Figure 5, the inner surface 113c of the sidewall portion 113 and the bending point I between the inner surface 113c and the second main surface 112b of the Si base layer 112 are bent. １ The angle θ between the tangent T of the second main surface 112b and the １ The inner surface 113c of the side wall portion 113 and the upper surface 113a of the side wall portion 113 are bent at a bending point I. ２ The angle formed by the second major surface 112b and the second major surface 112c was 90°. １ 5, the width of the side wall 113 was 100 μm, the width between the opposing inner surfaces 113 c of the recess was 2000 μm, and the ratio of the width between the opposing inner surfaces 113 c of the recess to the width of the side wall 113 was 20.

[0056] (Electronic Component Bonding Process) In the electronic component bonding process, one or more electronic components 111 are bonded to the bottom surface of the cavity (the second main surface 112b of the Si base layer 112). More specifically, an adhesive layer 115 (strictly speaking, a coating film of adhesive) is first formed on the second main surface 112b of the Si base layer 112. The adhesive coating film is formed on the second main surface 112b of the Si base layer 112. The coating film may be formed using, for example, spin coating, spray coating, mist CVD, inkjet printing, or a die attach film (DAF). When forming the coating film using a die attach film, strictly speaking, the die attach film is first attached to the component electrode 111d side of the electronic component 111, and the electronic component 111 in this state is then placed on the second main surface 112b of the Si base layer 112. In this manner, the adhesive layer 115 is formed. As a result, a cavity with a coating film formed thereon is produced, as shown in FIG. 6A . The thickness of the coating film is preferably controlled to fall within a range of 10 μm to the thickness of the component electrodes 111d of one or more electronic components 111. The adhesive is, for example, a thermosetting resin. Such a thermosetting resin is, for example, a thermosetting resin containing repeating units derived from benzocyclobutene (BCB), and can be obtained by polymerizing 1,3-divinyl-1,1,3,3-tetramethyldisiloxane-bis-benzocyclobutene (DVS-bis-BCB). Commercially available products include "CYCLOTENE" manufactured by Dow Chemical.

[0057] Next, as shown in FIG. 6B , one or more electronic components 111 are placed (mounted) face down in the air on the bottom surface of the cavity (the second main surface 112 b of the Si base layer 112) using a device such as a flip-chip holder and mounter so that the component electrodes 111 d and the insulating portions 111 e are in contact with the bottom surface of the cavity (the second main surface 112 b of the Si base layer 112) via the adhesive layer 115 (strictly speaking, a coating film of adhesive).

[0058] Next, the adhesive coating is cured to form the adhesive layer 115. Specifically, the electronic component 111 is placed in the cavity, and the adhesive coating is cured by heating in an oven. The oven may further include a pressure adjustment unit (more specifically, a component having a pressure reduction function and a pressure increase function). Voids may be trapped in the adhesive coating when the electronic component 111 is mounted on the bottom surface of the cavity. When the oven includes a pressure adjustment unit, voids in the adhesive coating can be easily removed. This allows one or more electronic components 111 to be bonded to the second main surface 112b of the Si base layer 112.

[0059] (Electronic Component Encapsulation Process) In the electronic component encapsulation process, one or more electronic components 111 are encapsulated with resin to form a resin encapsulation portion 114. Specifically, in the electronic component encapsulation process, as shown in FIG. 6C , a dispenser is used to apply liquid resin onto the cavity in which one or more electronic components 111 are mounted, so as to fill the recesses and sidewall portions 113. Then, a compression molding device is used to mold the applied liquid resin. Then, for example, a hot air circulation oven is used to harden the liquid resin. This forms the resin encapsulation portion 114. Note that instead of the liquid resin, a tablet-shaped resin or a powdered resin may be used.

[0060] (Resin Sealed Portion Thinning Process) In the resin sealed portion thinning process, the resin sealed portion 114 is thinned. Specifically, as shown in FIG. 6D , the resin sealed portion 114 is ground and thinned using a Si wafer back grinder so that the upper surface of the sidewall portion 113 is exposed. In the electronic component thinning process, the surface of the resin sealed portion 114 on the second surface 111b side of the electronic component 111 is ground. It is preferable to grind as much as possible.

[0061] 6D , which shows an example of the resin encapsulation portion thinning step, the resin encapsulation portion 114 of the electronic component layer 110 is ground, but one or more electronic components 111 may also be ground. However, care must be taken not to damage the internal functional parts of the electronic components 111. The functional parts are, for example, the dielectric and electrodes in the case of a capacitor, and the wiring in the case of an inductor.

[0062] In the resin encapsulation thinning process, a back grinder may be used, followed by planarization by CMP. In CMP, the target object is fixed on a Si support 140 and rotated on a polishing pad while a slurry containing chemicals and abrasive grains is supplied. Chemical polishing with chemicals and mechanical polishing with a grindstone are performed simultaneously to planarize the target object.

[0063] (Si Support Bonding Process) In the Si support bonding process, as shown in FIG. 6E , the Si support 140 is bonded to the resin encapsulation portion 114. Specifically, the Si wafer described in the cavity formation process is separately prepared as the Si support 140. Next, an adhesive layer 150 (strictly speaking, a coating film of adhesive) is formed on the Si support 140 using the method described in the electronic component bonding process. The resin encapsulation portion 114 is then bonded to the Si support 140 so that the ground surface of the resin encapsulation portion 114 contacts the coating film, and pressure and heat are applied. This hardens the coating film of adhesive to form the adhesive layer 150, and the Si support 140 is positioned on the ground surface of the resin encapsulation portion 114 via the adhesive layer 150. The purpose of providing the Si support 140 is to prevent adverse effects (more specifically, a decrease in strength, etc.) caused by the thinner layers during the manufacturing process compared to conventional methods in the subsequent Si base layer thinning process.

[0064] The Si support 140 can be thinned before bonding, if necessary, to improve processability. This is because a dielectric film will be formed using a semiconductor device in a subsequent process. For example, if the thickness of the electronic component 111 is 150 μm, the Si wafer (φ300 mm, typical thickness 775 μm) used as the Si support 140 is thinned to approximately 625 μm. Furthermore, when bonding the Si support 140, the adhesive strength of the adhesive layer 150 can be weakened in advance by ultraviolet light (UV light), heating, or chemical etching, in anticipation of its subsequent removal.

[0065] (Si Base Layer Thinning Process) In the Si base layer thinning process, the Si base layer 112 is thinned. Specifically, as shown in FIG. 6F , the Si base layer 112 is ground using a method similar to that used in the resin encapsulation portion thinning process to thin the Si base layer 112 and flatten the ground surface. In the Si base layer thinning process, the Si base layer 112 is thinned while being (indirectly) supported by the Si support 140, thereby effectively thinning the Si base layer 112. As a result, the manufacturing method for the composite component 1 according to this embodiment can manufacture a composite component 1 that is excellent as an electronic component module and has a low profile and a small size. The amount of grinding is preferably as large as possible while preventing the above-mentioned adverse effects and, for example, maintaining a certain level of strength. Considering variations in the flatness of the ground surface, the thickness of the thinned Si base layer 112 is preferably 3 μm or greater.

[0066] (Dielectric Film Forming Process) In the dielectric film forming process, as shown in Figures 6G, 6H, and 6I, a dielectric film 120a having a predetermined pattern is formed on the Si base layer 112. Here, Figures 6G to 6I are enlarged views of a portion corresponding to part C in Figure 6F. Figures 6J to 6M are similar. Also, it should be noted that, because Figures 6G to 6M are mainly views relating to the formation of the through-Si via 117 and the redistribution layer 120, for convenience, the through-Si via 117, the redistribution layer 120, and the areas where they are formed are enlarged so as to occupy a large portion.

[0067] Specifically, as shown in FIG. 6G, a dielectric film 120a (0.1-0.2 μm thick) is formed on the entire surface of the Si base layer 112 using a chemical vapor deposition (CVD) method such as PECVD. The dielectric film 120a may be formed in one or more layers. For example, when forming a four-layer dielectric film 120a, the thicknesses of the dielectric film 120a may be, in order from the Si base layer 112 side, SiO: 0.25 μm / SiN: 0.1 μm / SiO: 0.25 μm / SiN: 0.1 μm. Furthermore, in the dielectric film formation process, the surface of the Si base layer 112 may be cleaned before forming the dielectric film 120a. The cleaning may be, for example, wet cleaning or oxygen plasma ashing.

[0068] Next, as shown in FIGS. 6H and 6I, the dielectric film 120a is patterned using photolithography. A liquid resist is spin-coated to form a photoresist film 160 over the entire surface of the dielectric film 120a. The photoresist film 160 is exposed to light through a mask corresponding to a predetermined pattern. The exposed photoresist film 160 is developed. The dielectric film 120a is selectively removed from the photoresist film 160 using RIE (reactive ion etching). For example, if the four-layer dielectric film 120a described above is formed, two layers on the front side of the dielectric film 120a (the side of the dielectric film 120a facing the Si base layer 112) are selectively removed. The photoresist film 160 is then peeled off. This forms a dielectric film 120a having a predetermined pattern on the Si base layer 112. The dielectric film 120a also functions as an insulating film that electrically insulates two through-silicon vias 117 shown in FIG. 6L (described later). The first main surface 112a of the Si base layer 112 may further have a mark layer. The mark layer can be detected by an IR camera to perform alignment in the photolithography method.

[0069] (Through-Hole Forming Process) In the through-hole forming process, through-holes 112c and 115c are formed in the thinned Si base layer 112 and adhesive layer 115, exposing a portion of the surface of the component electrode 111d. Specifically, in the through-hole forming process, a photoresist film 160 is formed over the entire surface. The photoresist film 160 is exposed to light through a mask corresponding to the pattern of the through-Si via 117. The exposed photoresist film 160 is developed to form a photoresist film 160 having a predetermined pattern as shown in FIG. 6J. As shown in FIG. 6K, the Si base layer 112 and adhesive layer 115 present in the Z direction through the opening 160a in the photoresist film 160 are selectively removed (etched). The etching is performed using, for example, RIE and laser irradiation. This forms through-holes 112c and 115c, exposing (a portion of) the component electrode 111d. Here, the through-hole 115c in the adhesive layer 115 has a substantially elliptical shape in the ZX cross section. This is because the material constituting the adhesive layer 115 is more easily etched than the material constituting the Si base layer 112. As a result, a substantially elliptical extension 117b is formed in the subsequent through-Si via formation process. After the through holes 112c and 115c are formed, the photoresist film 160 is removed. RIE is preferably used as the etching method. Using RIE as the etching method improves the flatness of the exposed top surface of the component electrode 111d, allowing for good bonding with the through-Si via 117 to be formed later. This further prevents deterioration of electrical connectivity.

[0070] (Through-Si Via Forming Process) In the through-Si via forming process, through-Si vias are formed in the through holes. Specifically, in the through-hole forming process, as shown in FIG. 6L , through-Si vias 117 are formed in the through holes 112c, 115c by electroplating. Using a dual damascene method (more specifically, a Cu dual damascene method), the through-Si vias 117 are formed in the through holes 112c, 115c by electroplating (more specifically, electrolytic Cu plating). This forms the electronic component layer 110. After the through-hole forming process and before the through-Si via forming process, a barrier layer and a seed layer may be formed on the inner walls of the through holes 112c, 115c.

[0071] (Rewiring Layer Formation Process) In the rewiring layer formation process, the rewiring layer 120 is formed. Specifically, as shown in FIG. 6M, the rewiring layer 120 is formed by forming a dielectric film 120a and wiring 120b having a predetermined pattern using the above-described photolithography and etching. To mount the electronic component 111 face-down, the rewiring layer 120 can be formed with a submicron (1 μm or less) wiring width by forming the wiring using, for example, a dual damascene method and planarizing it using CMP. In contrast, when mounting the electronic component face-up, wiring cannot be formed using the dual damascene method, so a rewiring layer with a single micron (1 μm or more) wiring width is formed. Note that FIG. 6M depicts the rewiring layer 120 incorporating the dielectric film 120a formed in FIG. 6H and the wiring 120b formed in FIG. 6L. FIG. 6N shows a composite component 1 including FIG. 6M. FIG. 6M is an enlarged view of part C' in FIG. 6N.

[0072] (Operation Checking Step) In the operation checking step, the operation of the composite part 1 (more specifically, conduction, etc.) is checked.

[0073] (Dicing Process) In the dicing process, after removing the Si support 140 and the adhesive layer 150, the mother integrated body is diced along the dashed lines as shown in FIG. 6N using, for example, blade dicing, laser dicing, or stealth dicing to separate the mother integrated body. This produces the composite component 1. Note that when removing the Si support 140 and the adhesive layer 150, the adhesive strength of the adhesive layer 150 may be weakened by ultraviolet light (UV light) irradiation, heating, or etching with a chemical solution.

[0074] <Second Embodiment: Composite Component> The composite component according to the second embodiment differs from the composite component 1 according to the first embodiment in that the inner surface of the side wall portion forms an acute angle with the upper surface of the side wall portion. In the composite component 1 according to the first embodiment, the inner surface 113c of the side wall portion 113 forms a right angle (90°) with the upper surface 113a of the side wall portion 113. This different configuration will be mainly described below. In the second embodiment, the same reference numerals as those in the first embodiment represent the same configuration as in the first embodiment, and therefore, description thereof will be omitted in principle.

[0075] [Configuration of Composite Component] The configuration of a composite component according to a second embodiment will be described with reference to Fig. 7 . Fig. 7 is a diagram schematically illustrating a cross section of a composite component 1A according to a second embodiment of the present disclosure. As shown in Fig. 7 , the inner surface 113c of the side wall portion 113 is inclined to form an acute angle (more specifically, an angle smaller than 90°) with respect to the upper surface 113a of the side wall portion 113 in a cross-sectional view. The inner surface 113c and the upper surface 113a of the side wall portion 113 meet at a bending point I ２ When the angle is acute, resin sealing portion 114 is crimped by side wall portion 113, which can prevent resin sealing portion 114 from falling off from composite component 1A due to internal stress (which may occur during the manufacturing of composite component 1A and during operation of composite component 1A), thereby further improving the reliability of composite component 1A.

[0076] The inner surface 113c and the upper surface 113a are bent at a bending point I ２ The angle θ ２ In this specification, the term "ZX cross section" refers to a cross section at a magnification of 700 times (SEM image taken at a magnification of 700 times using a scanning electron microscope ("FlexSEM" manufactured by Hitachi High-Technologies Corporation)) where the substantially linear inner surface 113c and the upper surface 113a are connected to each other at a bending point I. ２ The ZX cross section of the composite part 1A for determining an obtuse angle is formed in the same manner as the ZX cross section of the composite part 1 for determining an acute angle, except that the composite part 1 is changed to the composite part 1A.

[0077] The inner surface 113c and the upper surface 113a are bent at a bending point I ２ The angle θ ２ From the viewpoint of suppressing the occurrence of detachment of the resin sealing portion 114, the angle is less than 90°, preferably 89° or less, and more preferably 85° or less.

[0078] The inner surface 113c and the upper surface 113a are bent at a bending point I ２ The angle θ ２ As will be described later in the manufacturing method of composite part 1A, the acute angle can be controlled by the time for anisotropic etching and isotropic etching (more specifically, by setting the time for isotropic etching longer than the time for normal isotropic etching, etc.).

[0079] The inner surface 113c and the upper surface 113a are bent at a bending point I ２ The angle θ ２ is an acute angle, the area R on the second main surface 112b where it is difficult to mount the electronic component 111 is １ is the bending point I between the upper surface 113a and the inner surface 113c in a cross-sectional view. ２ Point I is a point obtained by projecting the connection point 113b onto the second main surface 112b in the Z direction. ３ From this, the point I at which the second main surface 112b changes from a curve to a straight line ４ This refers to the area up to

[0080] [Method of Manufacturing Composite Component] An example of a method of manufacturing the composite component 1A according to the second embodiment will be described. The method of manufacturing the composite component 1A differs from the method of manufacturing the composite component 1 only in the cavity formation process.

[0081] (Cavity Forming Step) In the cavity forming step, a cavity is formed under the same conditions as in the first embodiment, except that the anisotropic etching and isotropic etching times are longer. ２ becomes an acute angle.

[0082] (Example) Figure 8 is a cross-sectional view showing a cavity (in which the sidewall portion 113A and the Si base layer 112 are integrated) formed in the cavity formation step of the manufacturing method for composite component 1A. Figure 8 is a scanning electron microscope image of the cut surface of the cavity (an SEM image taken at 700x magnification using a scanning electron microscope (FlexSEM manufactured by Hitachi High-Technologies Corporation). This cut surface includes the intersection of the diagonals of the approximately rectangular bottom surface of the cavity in a plan view and was formed by cutting along a plane parallel to the surface to be cut in the dicing step. As shown in Figure 8, the inner surface 113c of the sidewall portion 113A was inclined at an acute angle (89°) with respect to the top surface 113a.

[0083] Other Embodiments The present disclosure is not limited to the above-described embodiments, and design modifications are possible without departing from the spirit and scope of the present disclosure. In addition, the configurations of the first and second embodiments may be combined in various ways.

[0084] In the first and second embodiments, the composite component includes two electronic components of the same type, but this is not limited to this. For example, the composite component may include electronic components of different types, or may include one or three or more electronic components. Furthermore, the composite component may have a different number of electronic components in each composite component layer. This means that there are fewer restrictions on the number and types of electronic components to be built into the circuit design, allowing for greater design freedom. This enables a variety of circuit configurations, broadening the range of applications.

[0085] In the first and second embodiments, the redistribution layer 120 includes a dielectric film 120a substantially made of an inorganic material (inorganic insulating material) and wiring (conductive wiring) 120b, but is not limited thereto. For example, the dielectric film may be substantially made of an organic material (organic insulating material). When the dielectric film is substantially made of an organic material, composite components can be manufactured at lower cost than when a dielectric film is substantially made of an inorganic material. The line and space (L / S) of the redistribution layer 120 including a dielectric film substantially made of an organic material is, for example, 10 μm / 10 μm. The thickness of the dielectric film is, for example, 1 to 20 μm.

[0086] Examples of organic insulating materials include epoxy resin, silicone resin, polyester, polypropylene, polyimide, acrylonitrile-butadiene-styrene (ABS) resin, acrylonitrile-styrene (AS) resin, methacrylic resin, polyamide, fluororesin, liquid crystal polymer, polybutylene terephthalate, and polycarbonate. When the insulating material constituting the dielectric film is an organic insulating material, the dielectric film can be formed without using a method such as PECVD, and therefore costs can be reduced compared to the composite component 1 according to the first embodiment.

[0087] Aspects of a composite component according to the present disclosure are as follows. <1> A composite component incorporating one or more electronic components, comprising: a Si base layer having a first main surface and a second main surface opposing the first main surface; a redistribution layer disposed on the first main surface; a through-Si via electrically connected to the redistribution layer and penetrating the Si base layer; an electronic component electrically connected to the through-Si via and disposed on the second main surface; a sidewall portion surrounding the electronic component and disposed so as to form a recess together with the Si base layer; and a resin encapsulant encapsulating the electronic component. <2> The composite component according to <1>, wherein an inner surface of the sidewall portion and the second main surface of the Si base layer form an obtuse angle. <3> The composite component according to <1> or <2>, wherein a ratio of a width between opposing inner surfaces of the recess to a width of the sidewall portion is 10 to 1000. <4> The composite component according to any one of <1> to <3>, wherein an inner surface of the side wall portion is inclined at an acute angle with respect to an upper surface of the side wall portion in a cross-sectional view. <5> The composite component according to any one of <1> to <4>, wherein the electronic component has an electronic component body and component electrodes arranged on the electronic component body, and the component electrodes are electrically connected to the redistribution layer only through the through-silicon vias.

[0088] The composite part according to the present disclosure can be mounted and used in various electronic devices.

[0089] DESCRIPTION OF SYMBOLS 1, 1A... Composite component 110... Electronic component layer 111... Electronic component 111a... First surface 111b... Second surface 111c... Electronic component body 111d... Component electrode 111e... Insulating portion 112... Si base layer 112a... First main surface 112b... Second main surface 113, 113A... Side wall portion 114... Resin sealing portion 115... Adhesive layer (of electronic component) 117... Si through via 120... Rewiring layer 120a... Dielectric film 120b... Wiring 140... Si support 150... Adhesive layer (of Si support) θ １ ...The inner surface of the side wall portion and the second main surface of the Si base layer are bent at the bending point I １The angle θ ２ ...The upper surface of the side wall and the inner surface of the side wall are bent at the bending point I ２ angle

Claims

1. A composite component incorporating one or more electronic components, a Si-based layer having a first main surface and a second main surface opposite to the first main surface; a redistribution layer disposed on the first main surface; an electronic component disposed on the second main surface via an adhesive layer; a through-Si via that penetrates the Si base layer and the adhesive layer and electrically connects the redistribution layer and the electronic component; a sidewall portion surrounding the electronic component and disposed to form a recess together with the Si base layer; a resin sealing portion that seals the electronic component; A composite part comprising:

2. The composite part according to claim 1 , wherein an inner surface of the sidewall portion and the second main surface of the Si-based layer form an obtuse angle.

3. 2. The composite part according to claim 1, wherein a ratio of a width between opposing inner surfaces of the recess to a width of the sidewall is 10 to 1000.

4. The composite part according to claim 1 , wherein an inner surface of the side wall portion is inclined at an acute angle with respect to an upper surface of the side wall portion in a cross-sectional view.

5. the electronic component has an electronic component body and a component electrode disposed on the electronic component body, 5. The composite part according to claim 1, wherein the part electrodes are electrically connected to the rewiring layer only through the through-silicon vias.