Semiconductor device and semiconductor module

Abstract

Provided is a semiconductor device which includes: a current detection part through which a detection current corresponding to a main current of a transistor part flows; a current detection pad disposed above a semiconductor substrate and disposed side by side with the current detection part in a first direction; a built-in resistance part which is provided above the semiconductor substrate and which connects the current detection part and the current detection pad; and gate wiring disposed above the semiconductor substrate and connected to a gate conductive part. The built-in resistance part and the gate wiring are disposed side by side, between the current detection part and the current detection pad, in the first direction.

Description

Semiconductor device and semiconductor module

[0001] The present invention relates to a semiconductor device and a semiconductor module.

[0002] Conventionally, semiconductor devices having a region for current detection have been known (see, for example, Patent Documents 1 to 3). [Prior Art Documents] [Patent Document 1] Japanese Patent Laid-Open No. 4-335560 [Patent Document 2] Japanese Patent Laid-Open No. 5-3289 [Patent Document 3] Japanese Patent No. 3644697 General disclosure

[0003] (Problem to be Solved) It is preferable to be able to reduce the voltage applied to the current detection region. (Means for Solving the Problem)

[0004] A first aspect of the present invention provides a semiconductor device including a semiconductor substrate. The semiconductor device may include a transistor portion provided within the semiconductor substrate and having a gate conductive portion. Any of the semiconductor devices may include a current detection portion provided within the semiconductor substrate, through which a detection current corresponding to a main current of the transistor portion flows. Any of the semiconductor devices may include a current detection pad disposed above the semiconductor substrate and arranged alongside the current detection portion in a first direction. Any of the semiconductor devices may include a built-in resistor provided above the semiconductor substrate and connecting the current detection portion and the current detection pad. Any of the semiconductor devices may include a gate wiring disposed above the semiconductor substrate and connected to the gate conductive portion. The built-in resistor and the gate wiring of any of the semiconductor devices may be arranged alongside the first direction between the current detection portion and the current detection pad.

[0005] In any of the above semiconductor devices, the built-in resistor and the gate wiring may be made of polysilicon.

[0006] In any of the above semiconductor devices, the built-in resistor and the gate wiring may have the same thickness.

[0007] In any of the above semiconductor devices, the built-in resistor portion may have a longitudinal direction in a second direction different from the first direction when viewed from above.

[0008] Any of the above semiconductor devices may include a first connection portion in contact with the built-in resistor portion and electrically connecting the built-in resistor portion and the current detection portion. Any of the above semiconductor devices may include a second connection portion in contact with the built-in resistor portion and electrically connecting the built-in resistor portion and the current detection pad. Any of the above semiconductor devices may be arranged such that the first connection portion and the second connection portion are located at different positions in the second direction.

[0009] In any of the above semiconductor devices, the first connection portion may be arranged in a first region out of a first region and a second region obtained by equally dividing the built-in resistor in the second direction. In any of the above semiconductor devices, the second connection portion may be arranged in the second region.

[0010] In any of the above semiconductor devices, the gate wiring may have a longitudinal direction in the second direction.

[0011] In any of the above semiconductor devices, the gate wiring may be disposed between the built-in resistor and the current detection section.

[0012] In any of the above semiconductor devices, the gate wiring may be disposed between the built-in resistor portion and the current detection pad.

[0013] In any of the above semiconductor devices, a plurality of the gate wirings may be provided side by side in the first direction between the current detection unit and the current detection pad, and the built-in resistor may be sandwiched between two of the gate wirings between the current detection unit and the current detection pad.

[0014] In any of the above semiconductor devices, the current detection pad may not be in contact with the semiconductor substrate.

[0015] In any of the above semiconductor devices, the transistor section may have a drift region of a first conductivity type provided within the semiconductor substrate. In any of the above semiconductor devices, the transistor section may have an emitter region of the first conductivity type arranged within the semiconductor substrate above the drift region and having a higher concentration than the drift region. In any of the above semiconductor devices, the transistor section may have a base region of a second conductivity type arranged within the semiconductor substrate between the drift region and the emitter region. In any of the above semiconductor devices, the semiconductor device may include a pad well region of the second conductivity type provided within the semiconductor substrate and extending from the upper surface of the semiconductor substrate to a depth deeper than the base region. In any of the above semiconductor devices, the pad well region may overlap the entire current detection pad in a top view.

[0016] In any of the above semiconductor devices, the transistor section may have a drift region of a first conductivity type provided inside the semiconductor substrate. In any of the above semiconductor devices, the transistor section may have an emitter region of the first conductivity type arranged inside the semiconductor substrate above the drift region and having a higher concentration than the drift region. In any of the above semiconductor devices, the transistor section may have a base region of a second conductivity type arranged inside the semiconductor substrate between the drift region and the emitter region. In any of the above semiconductor devices, the semiconductor device may include a well region of a second conductivity type provided inside the semiconductor substrate and extending from an upper surface of the semiconductor substrate to a depth deeper than the base region. In any of the above semiconductor devices, the well region may overlap the entire built-in resistor section in a top view.

[0017] A second aspect of the present invention provides a semiconductor module including a semiconductor device having a semiconductor substrate and an external resistor connected to the semiconductor device. In the semiconductor module, the semiconductor device may include a transistor provided within the semiconductor substrate and having a gate conductive portion. In the semiconductor module, the semiconductor device may include a current detection portion provided within the semiconductor substrate, through which a detection current corresponding to a main current of the transistor portion flows. In the semiconductor module, the semiconductor device may include a current detection pad disposed above the semiconductor substrate. In the semiconductor module, the semiconductor device may include an internal resistor provided above the semiconductor substrate and connecting the current detection portion and the current detection pad. In the semiconductor module, the external resistor may be connected in series with the internal resistor and the current detection pad. In the semiconductor module, the resistance value of the internal resistor may be greater than the resistance value of the external resistor.

[0018] In the semiconductor module, the resistance value of the built-in resistor may be three times or more and ten times or less the resistance value of the external resistor.

[0019] In the semiconductor module, the resistance value of the built-in resistor may be 6 Ω or more.

[0020] In the semiconductor module, the resistance value of the built-in resistor may be 20Ω or less.

[0021] In the semiconductor module, the resistance value (Ω) of the built-in resistor may be Ir / 50 or more, where Ir (A) is a rated current of the semiconductor device.

[0022] In the semiconductor module, the resistance value of the built-in resistor may be Ir / 15 or less.

[0023] The above summary of the invention does not list all of the necessary features of the present invention. In addition, subcombinations of these features may also constitute inventions.

[0024] 1 is a diagram showing an equivalent circuit of a semiconductor module 200 according to an embodiment of the present invention. FIG. 1 is a diagram showing the relationship between the resistance value Rs [Ω] of a resistor connected to the emitter of the current detection unit 26 and the short-circuit withstand capability of the current detection unit 26. FIG. 2 is a top view showing an example of a semiconductor device 100 according to an embodiment of the present invention. FIG. 3 is an enlarged view of a region P in FIG. 3. FIG. 4 is a diagram showing an example of an A-A' cross section in FIG. 4. FIG. 4 is a diagram showing an example of a B-B' cross section in FIG. 4. FIG. 5 is a diagram showing an example of a P region according to a first embodiment. FIG. 7 is a diagram showing an example of an A-A' cross section in FIG. 7. FIG. 8 is a diagram showing an example of a P region according to a second embodiment. FIG. 9 is an enlarged view of a built-in resistor 210. FIG. 10 is a diagram showing an example of an A-A' cross section in FIG. 10. FIG. 11 is a diagram showing an example of a C-C' cross section in FIG. 11. FIG. 12 is a diagram showing an example of a P region according to a third embodiment. FIG. 13 is a diagram showing an example of an A-A' cross section in FIG. 13. FIG. 14 is a diagram showing an example of a C-C' cross section in FIG. 13. FIG. 15 is a diagram showing an example of a P region according to a fourth embodiment. FIG. 16 is a diagram showing an example of an A-A' cross section in FIG. 16. FIG. 17 is a diagram showing an example of a C-C' cross section in FIG. 16.

[0025] The present invention will be described below through embodiments of the invention, but the following embodiments do not limit the scope of the invention. Furthermore, not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention. In this specification, the same parts in each drawing are given the same reference numerals, and their description may be omitted. Furthermore, for the sake of convenience, some components may not be illustrated.

[0026] In this specification, one side in a direction parallel to the depth direction of a semiconductor substrate is referred to as "upper" and the other side as "lower." Of the two main surfaces of a substrate, layer, or other member, one surface is referred to as the upper surface and the other surface is referred to as the lower surface. The directions of "upper" and "lower" are not limited to the direction of gravity or the directions when the semiconductor device is mounted.

[0027] In this specification, technical matters may be explained using an orthogonal coordinate system of X, Y, and Z axes. The orthogonal coordinate system merely specifies the relative positions of components and does not limit a specific direction. For example, the Z-axis direction does not limit the height direction relative to the ground. Note that the +Z-axis direction and the -Z-axis direction are opposite directions. When the Z-axis direction is written without specifying positive or negative, it means the direction parallel to the +Z-axis and -Z-axis.

[0028] In this specification, orthogonal axes parallel to the upper and lower surfaces of the semiconductor substrate are referred to as the X-axis and Y-axis. Furthermore, an axis perpendicular to the upper and lower surfaces of the semiconductor substrate is referred to as the Z-axis. In this specification, the direction of the Z-axis may be referred to as the depth direction. Furthermore, in this specification, the direction parallel to the upper and lower surfaces of the semiconductor substrate, including the X-axis and Y-axis, may be referred to as the horizontal direction.

[0029] In describing a circuit diagram, when a description is given of the arrangement of components, such as when two components are provided between other components, the description is of their positional relationship on the electrical path, and does not limit their spatial positional relationship.

[0030] In this specification, when we say "same" or "equal," it may also include cases where there is an error due to manufacturing variations, etc. The error is, for example, within 10%.

[0031] In this specification, the conductivity type of a doped region doped with an impurity is described as P-type or N-type. In this specification, the term "impurity" may particularly refer to either an N-type donor or a P-type acceptor, and may be referred to as a "dopant." In this specification, "doping" means introducing a donor or an acceptor into a semiconductor substrate to form a semiconductor exhibiting an N-type conductivity type or a P-type conductivity type. In this specification, the doping concentration of an N-type region may be referred to as a "donor concentration," and the doping concentration of a P-type region may be referred to as an "acceptor concentration."

[0032] 1 is a diagram showing an equivalent circuit of a semiconductor module 200 according to an embodiment of the present invention. The semiconductor module 200 includes a semiconductor device 100, a gate drive circuit 201, and an external resistor unit 206. The semiconductor module 200 may include a housing that houses the semiconductor device 100, the gate drive circuit 201, and the external resistor unit 206. The housing may include an insulating material such as resin or ceramic. The semiconductor module 200 may include a plurality of semiconductor devices 100.

[0033] The semiconductor device 100 is a semiconductor chip including a power semiconductor such as an IGBT (Insulated Gate Bipolar Transistor). The semiconductor device 100 of this example includes a transistor section 70 and a current detection section 26. The transistor section 70 and the current detection section 26 are provided on the same semiconductor substrate. The current detection section 26 has a similar structure to the transistor section 70. The current detection section 26 and the transistor section 70 of this example each include a vertical IGBT. The transistor section 70 and the current detection section 26 are electrically connected in parallel, and the current detection section 26 has a smaller area than the transistor section 70 on the top surface of the semiconductor substrate. The total channel widths of the transistor section 70 and the current detection section 26 are roughly proportional to their respective areas. Therefore, currents corresponding to their respective areas flow through the transistor section 70 and the current detection section 26. By detecting the detection current Is flowing through the current detection section 26, the main current Ic flowing through the transistor section 70 can be estimated.

[0034] The collector electrode of the transistor section 70 and the collector electrode of the current detection section 26 are connected to each other and to a common collector terminal (C). The collector terminal (C) is a terminal provided on the semiconductor module 200 and is connected to an external circuit.

[0035] The gate electrode of the transistor section 70 and the gate electrode of the current detection section 26 are connected to a common gate drive circuit 201. The gate drive circuit 201 inputs a common gate signal to the transistor section 70 and the current detection section 26, causing the transistor section 70 and the current detection section 26 to operate in synchronization. The gate drive circuit 201 is connected to an external circuit via a gate terminal (G) provided on the semiconductor module 200.

[0036] The semiconductor device 100 includes an emitter electrode 52 and a current detection pad 114. The emitter electrode 52 is connected to the emitter of the transistor section 70. The emitter electrode 52 is connected to an emitter terminal (E) of the semiconductor module 200 via wiring such as a wire.

[0037] The current detection pad 114 is connected to the emitter of the current detection unit 26. The current detection pad 114 is separated from the emitter electrode 52 on the semiconductor substrate of the semiconductor device 100. In this example, the current detection pad 114 is connected to the external resistor unit 206 via wiring such as a wire. The external resistor unit 206 is provided between the current detection pad 114 and the emitter terminal (E). The external resistor unit 206 is provided on a substrate different from the semiconductor substrate of the semiconductor device 100. For example, the semiconductor module 200 may have a circuit board on which the semiconductor device 100 and the external resistor unit 206 are mounted. The semiconductor device 100 on the circuit board and the external resistor unit 206 on the circuit board are connected by wiring such as a wire.

[0038] When the transistor unit 70 and the current detection unit 26 are turned on, a main current Ic and a detection current Is flow through the transistor unit 70 and the current detection unit 26 according to their respective areas. The detection current Is flowing through the current detection unit 26 can be detected by measuring the voltage drop across the external resistor unit 206. The main current Ic of the transistor unit 70 can be estimated from the detection current Is. This makes it possible to detect an overcurrent in the transistor unit 70 and shut down the device, for example.

[0039] The external resistor unit 206 is not built into the semiconductor device 100, and various resistors can be connected to the semiconductor device 100. For example, a user of the semiconductor module 200 may prepare the external resistor unit 206 and build it into the semiconductor module 200.

[0040] If the resistance value Rs2 of the external resistor 206 is small, a large voltage may be applied between the collector and emitter or between the gate and emitter of the current detection unit 26. If a large voltage is applied to the current detection unit 26, the current detection unit 26 may be destroyed.

[0041] The semiconductor device 100 of this example includes an internal resistor 210. The internal resistor 210 is provided between the emitter of the current detection unit 26 and the current detection pad 114. The internal resistor 210, the current detection pad 114, and the external resistor 206 are connected in series between the current detection unit 26 and the emitter terminal (E).

[0042] The resistance value Rs1 of the internal resistor unit 210 is larger than the resistance value Rs2 of the external resistor unit 206. This makes it easier to maintain the resistance value of the combined resistor connected to the emitter of the current detection unit 26, even when the resistance value Rs2 of the external resistor unit 206 is small. This makes it possible to reduce the voltage applied to the current detection unit 26 and prevent damage to the current detection unit 26.

[0043] The resistance value Rs1 of the internal resistor unit 210 may be three times or more the resistance value Rs2 of the external resistor unit 206. This makes it easier to maintain the resistance value of the combined resistor connected to the emitter of the current detection unit 26. The resistance value Rs1 may be four times or more, or even five times or more, the resistance value Rs2.

[0044] The resistance value Rs1 of the internal resistor 210 may be 10 times or less the resistance value Rs2 of the external resistor 206. This prevents the detection current Is from becoming too small, thereby maintaining the detection accuracy of the detection current Is. The resistance value Rs1 may be 8 times or less, or even 6 times or less, the resistance value Rs2.

[0045] 2 is a diagram showing the relationship between the resistance value Rs [Ω] of the resistor connected to the emitter of the current detection unit 26 and the short-circuit withstand capability of the current detection unit 26. In FIG. 2, the short-circuit withstand capability is a predetermined value [A / cm ２ 2. The circle plot in Fig. 2 shows one measurement result. In the example of Fig. 1, the resistance value Rs is the sum of the resistance value Rs1 and the resistance value Rs2.

[0046] As shown in FIG. 2, as the resistance value Rs increases, the short-circuit withstand capability increases. In particular, the short-circuit withstand capability increases significantly up to a resistance value Rs of approximately 6 Ω. For this reason, the resistance value Rs1 of the built-in resistor 210 may be set to 6 Ω or more. This makes it easier to ensure the short-circuit withstand capability of the current detection unit 26. The resistance value Rs1 may be 8 Ω or more, or may be 10 Ω or more. In the region where the resistance value Rs1 is 10 Ω or more, the short-circuit withstand capability of the current detection unit 26 is relatively stable.

[0047] Providing the built-in resistor 210 can reduce the detection current Is flowing through the current detection unit 26. This reduces the gain (gm) of the current detection unit 26. This can suppress oscillation of the waveform in the current detection unit 26, thereby increasing the short-circuit resistance.

[0048] The resistance value Rs1 of the internal resistor 210 may be 20Ω or less. This prevents the detection current Is from becoming too small. The resistance value Rs1 may be 17Ω or less, or may be 15Ω or less.

[0049] The resistance value of the external resistor unit 206 may be 0.5 Ω or more and less than 6 Ω. The resistance value of the external resistor unit 206 may be 1 Ω or more, or 1.5 Ω or more. The resistance value of the external resistor unit 206 may be 5 Ω or less, or 4 Ω or less.

[0050] The rated current of the semiconductor device 100 is Ir (A). The rated current Ir may be the specification value of the semiconductor device 100. The resistance value Rs1 (Ω) of the built-in resistor 210 may be Ir / 50 or more. The resistance value Rs1 may be Ir / 40 or more, or may be Ir / 30 or more. The resistance value Rs1 may be Ir / 15 or less. The resistance value Rs1 may be Ir / 20 or less, or may be Ir / 25 or less.

[0051] 3 is a top view showing an example of a semiconductor device 100 according to an embodiment of the present invention. In FIG. 3, the positions of each component are shown as projected onto the top surface of the semiconductor substrate 10. In FIG. 3, only some components of the semiconductor device 100 are shown, and some components are omitted.

[0052] The semiconductor device 100 includes a semiconductor substrate 10. The semiconductor substrate 10 is a substrate made of a semiconductor material. As an example, the semiconductor substrate 10 is a silicon substrate. In this specification, the outer peripheral edge of the semiconductor substrate 10 in a top view is referred to as an outer peripheral edge 140. The top view refers to a view parallel to the Z-axis from the top surface side of the semiconductor substrate 10. Furthermore, one of the edges of the outer peripheral edge 140 of the semiconductor substrate 10 in a top view is referred to as a first edge 142. In a top view, the direction parallel to the first edge 142 is referred to as the X-axis direction, and the direction perpendicular to the first edge 142 is referred to as the Y-axis direction.

[0053] An active portion 120 is provided in the semiconductor substrate 10. The active portion 120 is a region through which a main current flows in the depth direction between the upper and lower surfaces of the semiconductor substrate 10 when the semiconductor device 100 is in operation. An emitter electrode 52 is provided above the active portion 120, but is omitted in FIG. 3 .

[0054] The active section 120 is provided with a transistor section 70 including a transistor element such as an IGBT. The active section 120 may further be provided with a diode section 80 including a diode element such as a free wheel diode (FWD). The transistor section 70 and the diode section 80 are provided inside the semiconductor substrate 10. In the example of FIG. 3 , the transistor sections 70 and the diode sections 80 are alternately arranged along the first direction. Trench sections, which will be described later, may also be arranged side by side along the first direction. In this example, the transistor section 70 is provided at an end of the active section 120 in the first direction. In another example, the active section 120 may be provided with only one of the transistor section 70 and the diode section 80.

[0055] The transistor section 70 and the diode section 80 may each have a longitudinal direction in the second direction. The direction parallel to the longest straight line among the boundary lines of each component when viewed from above may be the longitudinal direction of that component. The second direction is a direction in the XY plane and is different from the first direction. In this specification, the first direction is the X-axis direction and the second direction is the Y-axis direction. The length of the transistor section 70 in the Y-axis direction is greater than its width in the X-axis direction. Similarly, the length of the diode section 80 in the Y-axis direction is greater than its width in the X-axis direction. The longitudinal direction of the transistor section 70 and the diode section 80 may be the same as the longitudinal direction of each trench section, which will be described later.

[0056] The diode section 80 has an N+ type cathode region in a region that contacts the lower surface of the semiconductor substrate 10. In this specification, the region in which the cathode region is provided is referred to as the diode section 80. In other words, the diode section 80 is a region that overlaps with the cathode region in a top view. A P+ type collector region may be provided in a region other than the cathode region on the lower surface of the semiconductor substrate 10. In this specification, the region in which the diode section 80 is extended in the Y-axis direction up to the active well region 29 described below may also be included in the diode section 80. A collector region is provided on the lower surface of the extended region.

[0057] The transistor section 70 has a P+ type collector region in a region in contact with the lower surface of the semiconductor substrate 10. In addition, the transistor section 70 has a gate structure periodically arranged on the upper surface side of the semiconductor substrate 10, the gate structure having an N+ type emitter region, a P- type base region, a gate conductive portion, and a gate insulating film.

[0058] A plurality of pad sections 110 (in the example of FIG. 3 , a current detection pad 114, an auxiliary emitter pad 115, a gate pad 116, a cathode pad 117, and an anode pad 118) are provided above the upper surface of the semiconductor substrate 10. The current detection pad 114 is connected to the current detection section 26.

[0059] The current detection unit 26 is provided inside the semiconductor substrate 10, and a detection current Is flows through the current detection unit 26 in accordance with the main current Ic of the transistor unit 70. The current detection unit 26 has the same unit structure as the transistor unit 70, and has a smaller area (corresponding to the area of ​​the channel) in a top view than the transistor unit 70. The unit structure is repeatedly formed in the current detection unit 26 and the transistor unit 70. The unit structure includes, for example, a gate electrode, a gate insulating film, an N+ type emitter region, and a P- type base region.

[0060] By detecting the current flowing through the current detection unit 26, it is possible to estimate the current flowing throughout the semiconductor device 100. As described in FIG. 1 , the current detection pad 114 is connected to one end of the external resistor unit 206 by a wiring such as a wire. The other end of the external resistor unit 206 may be connected to the emitter electrode 52 via a wiring such as a wire. The other end of the external resistor unit 206 may be connected to the emitter electrode 52 via an auxiliary emitter pad 115. The emitter electrode 52 is connected to the emitter terminal (E) via a wiring such as a wire.

[0061] The gate pad 116 is connected to the gate conductive portion of the transistor section 70 and the gate conductive portion of the current detection section 26. The gate conductive portion is an example of a gate electrode in a MOS gate structure. In this example, the gate pad 116 is connected to each gate conductive portion via a gate wiring 50. The gate wiring 50 is arranged between the active section 120 and the edge 142 in a top view. For example, the gate wiring 50 is arranged so as to surround the active section 120 in a top view. In FIG. 3, the gate wiring 50 is indicated by a dashed line.

[0062] The gate wiring 50 may be a polysilicon wiring arranged above the upper surface of the semiconductor substrate 10. The gate wiring 50 and the semiconductor substrate 10 are insulated by an insulating film. The gate wiring 50 may further include a metal wiring stacked on the polysilicon wiring with the insulating film interposed therebetween. The polysilicon wiring and the metal wiring are connected via a contact hole provided in the insulating film. By providing the gate wiring 50, the gate voltage can be transmitted with low delay and low attenuation even to regions distant from the gate pad 116.

[0063] The cathode pad 117 and the anode pad 118 are connected to a temperature sensing section 111, which will be described later. The number and types of pad sections 110 provided on the semiconductor substrate 10 are not limited to the example shown in FIG.

[0064] Each pad is made of a metal material such as aluminum. The pad sections 110 are arranged in a predetermined direction between the active section 120 and a first edge 142 on the upper surface of the semiconductor substrate 10. The pad sections 110 in this example are sandwiched between the active section 120 and the first edge 142 in the Y-axis direction. The pad sections 110 in this example are provided above an active well region 29, which will be described later.

[0065] In the arrangement direction of the multiple pad sections 110, the current detection section 26 may be provided between any two pad sections 110. In this example, the current detection section 26 is arranged between the two pad sections 110 in the first direction. In this example, the first direction and the arrangement direction of the pad sections 110 are the same direction.

[0066] The semiconductor substrate 10 has an active well region 29. The active well region 29 surrounds the transistor section 70 and the diode section 80 in a top view. The active well region 29 surrounds the active section 120 in a top view. The active well region 29 is a region of a second conductivity type having a higher doping concentration than the base region. In this example, the active well region 29 is of P+ type. The active well region 29 may surround the active section 120 along the gate wiring 50. The active well region 29 may be provided in the semiconductor substrate 10 below the region where the gate wiring 50 is provided. The active well region 29 is also provided around or below the pad section 110, but is omitted in FIG. 3 .

[0067] The edge termination structure 90 is provided on the top surface of the semiconductor substrate 10 between the active well region 29 and the outer periphery edge 140 of the semiconductor substrate 10. The edge termination structure 90 may be arranged in an annular shape to surround the active well region 29 on the top surface of the semiconductor substrate 10. In this example, the edge termination structure 90 is arranged along the outer periphery edge 140 of the semiconductor substrate 10. The edge termination structure 90 reduces electric field concentration on the top surface side of the semiconductor substrate 10. The edge termination structure 90 may have, for example, a guard ring, a field plate, a resurf structure, or a structure combining these.

[0068] The temperature sense wiring 112 is provided above the active section 120. The temperature sense wiring 112 may be semiconductor wiring. The temperature sense wiring 112 is connected to the temperature sense section 111. The temperature sense wiring 112 extends to a region between the active section 120 and the outer peripheral edge 140 on the upper surface of the semiconductor substrate 10, and is connected to the cathode pad 117 and the anode pad 118. Note that the semiconductor device 100 does not necessarily have to include the temperature sense section 111 and the temperature sense wiring 112.

[0069] Fig. 4 is an enlarged view of region P in Fig. 3. Region P includes current detection pad 114 and current detection unit 26. Fig. 4 shows region P according to a reference example. Semiconductor device 100 of the reference example does not have built-in resistor unit 210 described in Fig. 1.

[0070] The current detection pad 114 is disposed above the upper surface of the semiconductor substrate 10. In a top view, the current detection pad 114 is disposed side by side with the current detection unit 26 in the first direction. "The current detection pad 114 and the current detection unit 26 are aligned in the first direction" refers to a state in which at least a portion of the current detection pad 114 and at least a portion of the current detection unit 26 face each other in the first direction. Wires and other interconnections are connected to the upper surface of the current detection pad 114.

[0071] A current detection electrode 214 is provided above the current detection unit 26. The current detection electrode 214 is connected to the emitter region of the current detection unit 26. In the reference example, the current detection electrode 214 is connected to the current detection pad 114. The current detection electrode 214 may be formed from the same material as the current detection pad 114. In other words, the current detection electrode 214 in the reference example may be an extended portion of the current detection pad 114. With this structure, the detection current Is of the current detection unit 26 flows through the current detection electrode 214 and the current detection pad 114.

[0072] In this example, the gate wiring 50 is also arranged between the current detection pad 114 and the current detection unit 26 in top view. In the example of FIG. 4 , the gate wiring 50 is provided so as to surround the current detection unit 26. The gate wiring 50 surrounding the current detection unit 26 may be connected to a gate conductive portion in the current detection unit 26. In addition, the gate wiring 50 surrounding the current detection unit 26 may also be connected to a gate conductive portion of the transistor unit 70.

[0073] 4, the current detection unit 26 is disposed opposite the transistor unit 70 in the Y-axis direction. In this example, a gate wiring 50 is also provided between the current detection unit 26 and the transistor unit 70. The gate conductive portions of the current detection unit 26 and the transistor unit 70 may be connected to the gate wiring 50 between the current detection unit 26 and the transistor unit 70.

[0074] 5 is a diagram showing an example of the AA' cross section in FIG. 4. The AA' cross section is an XZ plane passing through the current detection unit 26 and the current detection pad 114. In the AA' cross section, the semiconductor device 100 includes a semiconductor substrate 10, a collector electrode 24, an interlayer insulating film 38, a current detection pad 114, a current detection electrode 214, and a gate wiring 50. The semiconductor substrate 10 has an upper surface 21 and a lower surface 23. The upper surface 21 and the lower surface 23 are the two main surfaces of the semiconductor substrate 10.

[0075] The interlayer insulating film 38 is provided on the upper surface 21 of the semiconductor substrate 10. The interlayer insulating film 38 is a film including at least one layer of an insulating film such as silicate glass doped with impurities such as boron or phosphorus, a thermal oxide film, and another insulating film.

[0076] The current detection pad 114 and the current detection electrode 214 are provided above the interlayer insulating film 38. The current detection electrode 214 passes through a contact hole provided in the interlayer insulating film 38 and is in contact with the upper surface 21 of the semiconductor substrate 10 on which the current detection unit 26 is provided. The current detection pad 114 is provided at a position that does not overlap with the current detection unit 26, and is connected to the current detection electrode 214.

[0077] The gate wiring 50 is disposed above the upper surface 21 of the semiconductor substrate 10. An insulating film such as an interlayer insulating film 38 is provided between the gate wiring 50 and the semiconductor substrate 10. The gate wiring 50 is disposed below metal electrodes such as the current detection electrode 214. The gate wiring 50 and the metal electrodes are insulated by the interlayer insulating film 38.

[0078] The collector electrode 24 is provided on the lower surface 23 of the semiconductor substrate 10. The current detection pad 114, the current detection electrode 214, and the collector electrode 24 are made of a metal material such as aluminum.

[0079] The current detection unit 26 includes a trench portion 40, an N+ type emitter region 12, a P- type base region 14, an N- type drift region 18, and a P+ type collector region 22. The trench portion 40 is provided from the upper surface 21 of the semiconductor substrate 10 toward the inside. In this example, multiple trench portions 40 are arranged along a first direction (X-axis direction), and each trench portion 40 has a longitudinal direction in a second direction (Y-axis direction). The trench portion 40 includes a gate insulating film 42 and a gate conductive portion 44. The gate insulating film 42 is provided to cover the inner wall of the trench. The gate insulating film 42 may be formed by oxidizing or nitriding the semiconductor on the inner wall of the trench. The gate conductive portion 44 is provided inside the trench relative to the gate insulating film 42. In other words, the gate insulating film 42 insulates the gate conductive portion 44 from the semiconductor substrate 10. The gate conductive portion 44 is formed of a conductive material such as polysilicon. 5, the gate conductive portion 44 is electrically connected to the gate wiring 50. Some of the trench portions 40 may function as dummy trench portions to which an emitter potential is applied to the gate conductive portion 44.

[0080] In the X-axis direction, an emitter region 12 and a base region 14 are provided between the two trench portions 40. The emitter region 12 is exposed on the upper surface 21 of the semiconductor substrate 10 and is connected to a current detection electrode 214. The base region 14 is in contact with the trench portion 40 between the emitter region 12 and the drift region 18. When a predetermined gate voltage is applied to the gate conductive portion 44 of the trench portion 40, the surface layer of the base region 14 in contact with the trench portion 40 is inverted to an N-type region, forming a channel. As a result, the emitter region 12 and the drift region 18 are connected by the channel, and a detection current Is flows.

[0081] The collector region 22 is provided on the lower surface 23 of the semiconductor substrate 10. The collector region 22 is in contact with a collector electrode 24. The acceptor concentration of the collector region 22 is higher than the acceptor concentration of the base region 14. With this structure, the current detection unit 26 operates as an IGBT.

[0082] Like the current detection section 26, the transistor section 70 also has trench sections 40, an N+ type emitter region 12, a P- type base region 14, an N- type drift region 18, and a P+ type collector region 22. However, the transistor section 70 has more trench sections 40 than the current detection section 26.

[0083] The diode section 80 may also have a plurality of trench sections 40. However, the trench sections 40 of the diode section 80 function as the above-mentioned dummy trench sections. Furthermore, the diode section 80 does not have an emitter region 12. In the diode section 80, a base region 14 may be provided instead of the emitter region 12. Furthermore, in the diode section 80, an N+ type cathode region is provided instead of the collector region 22.

[0084] A sense well region 28 may be provided in the semiconductor substrate 10. The sense well region 28 is a P+ type region exposed on the upper surface 21 of the semiconductor substrate 10. The sense well region 28 may be provided deeper than the trench portion 40. The sense well region 28 may surround the current detection portion 26 in a top view. By providing the sense well region 28, the current detection portion 26 can be separated from the active portion 120 and the like, and the detection current Is can be detected with high accuracy.

[0085] A pad well region 25 may be provided in the semiconductor substrate 10. The pad well region 25 is a P+ type region exposed on the upper surface 21 of the semiconductor substrate 10. The pad well region 25 may be provided deeper than the trench portion 40. The pad well region 25 overlaps with at least a portion of the current detection pad 114 in a top view. The pad well region 25 may overlap with the entire current detection pad 114. The pad well region 25 may overlap with a portion of the current detection electrode 214. The pad well region 25 may be connected to the sense well region 28.

[0086] At least a portion of the gate wiring 50 may overlap with at least one of the pad well region 25 and the sense well region 28. In this example, both ends of the gate wiring 50 in the X-axis direction overlap with the pad well region 25 or the sense well region 28.

[0087] 6 is a diagram showing an example of the BB' cross section in Fig. 4. The BB' cross section is a YZ plane passing through the current detection section 26 and the transistor section 70. In the BB' cross section, the semiconductor device 100 includes the semiconductor substrate 10, the collector electrode 24, the interlayer insulating film 38, the emitter electrode 52, the current detection electrode 214, and the gate wiring 50.

[0088] Each of the current detection unit 26 and the transistor unit 70 has a trench portion 40 in the cross section. The gate conductive portion 44 of each trench portion 40 is connected to the gate wiring 50. As a result, a gate voltage is applied to each gate conductive portion 44.

[0089] The end of the trench portion 40 of the current detection unit 26 in the Y-axis direction may be covered by a sense well region 28. Furthermore, the end of the trench portion 40 of the transistor unit 70 in the Y-axis direction may be covered by an active well region 27. The active well region 27 is a P+ type region exposed on the upper surface 21 of the semiconductor substrate 10. The active well region 27 may be provided deeper than the trench portion 40. The active well region 27 may be connected to the active well region 29 in FIG. 3. By covering the end of the trench portion 40 with a P+ type region, electric field concentration at the end of the trench portion 40 can be alleviated.

[0090] 7 is a diagram showing an example of a P region according to the first embodiment. The semiconductor device 100 of this embodiment further includes an internal resistor 210 in addition to the reference example described with reference to FIGS. 4 to 6. The semiconductor device 100 of this embodiment may have the same structure as the reference example described with reference to FIGS. 4 to 6, except for the configurations that will be particularly described.

[0091] The built-in resistor 210 and the gate wiring 50 are arranged side by side in the first direction (X-axis direction) between the current detection unit 26 and the current detection pad 114. In the example of FIG. 7 , the gate wiring 50 is arranged between the built-in resistor 210 and the current detection unit 26. However, the built-in resistor 210 is separated from the gate wiring 50.

[0092] Between the current detection unit 26 and the current detection pad 114 refers to the area between at least a portion of the current detection unit 26 and at least a portion of the current detection pad 114. In this example, at least a portion of the current detection unit 26 is disposed on the positive side of the X-axis direction relative to the built-in resistor 210 and the gate wiring 50, and at least a portion of the current detection pad 114 is disposed on the negative side of the X-axis direction relative to the built-in resistor 210 and the gate wiring 50. At least one of the built-in resistor 210 and the gate wiring 50 may overlap the current detection pad 114.

[0093] The internal resistor 210 and the gate wiring 50 being aligned in the first direction (X-axis direction) means that at least a portion of the internal resistor 210 faces the gate wiring 50 in the first direction. 50% or more of the internal resistor 210 in the Y-axis direction may face the gate wiring 50 in the first direction, or the entire internal resistor 210 in the Y-axis direction may face the gate wiring 50 in the first direction. The internal resistor 210 may have a region that does not face the gate wiring 50 in the first direction. For example, the internal resistor 210 may extend longer in the Y-axis direction than the gate wiring 50 aligned in the first direction.

[0094] The end of the current detection unit 26 in the X-axis direction is defined as the trench portion 40 provided at the end of the current detection unit 26 in the X-axis direction. The built-in resistor 210 and the gate wiring 50 are arranged closer to the current detection pad 114 than the current detection unit 26.

[0095] The current detection electrode 214 in this example is provided separately from the current detection pad 114. The current detection pad 114 in this example is not in contact with the semiconductor substrate 10. In other words, the metal forming the current detection pad 114 is not in contact with the semiconductor substrate 10. The current detection electrode 214 and the current detection pad 114 are connected to each other via the built-in resistor 210. In this way, the built-in resistor 210 connects the current detection unit 26 and the current detection pad 114.

[0096] With this structure, built-in resistor 210 can be provided between current detection unit 26 and current detection pad 114. The resistance value of built-in resistor 210 may be adjusted by the shape such as the cross-sectional area and width of built-in resistor 210, by the material forming built-in resistor 210, or by the concentration of impurities added to built-in resistor 210.

[0097] The built-in resistor 210 in this example may be formed of polysilicon, which makes it possible to easily provide the built-in resistor 210 above the semiconductor substrate 10.

[0098] Both the built-in resistor 210 and the gate wiring 50 may be formed of polysilicon. This allows at least part of the process for forming the built-in resistor 210 and the gate wiring 50 to be shared. This makes it possible to easily form the built-in resistor 210.

[0099] The thickness of the built-in resistor 210 in the Z-axis direction may be the same as the thickness of the gate wiring 50 in the Z-axis direction. This makes it easier to standardize the formation process of the built-in resistor 210 and the gate wiring 50. In another example, the thickness of the built-in resistor 210 in the Z-axis direction may be smaller than the thickness of the Z-axis wiring of the gate wiring 50. This allows the resistance value of the built-in resistor 210 to be high. The thickness of the built-in resistor 210 in the Z-axis direction may be half or less of the thickness of the Z-axis wiring of the gate wiring 50.

[0100] Impurity concentration (atoms / cm ３ ) may have the same impurity concentration as the gate wiring 50. This makes it easier to standardize the process for forming the built-in resistor 210 and the gate wiring 50. In another example, the impurity concentration of the built-in resistor 210 may be lower than the impurity concentration of the gate wiring 50. This allows the resistance value of the built-in resistor 210 to be increased. The impurity concentration of the built-in resistor 210 may be half or less of the impurity concentration of the gate wiring 50.

[0101] Fig. 8 is a diagram showing an example of the AA' cross section of Fig. 7. As in the example of Fig. 5, the AA' cross section is an XZ plane passing through the current detection unit 26 and the current detection pad 114. As described in Fig. 7, the semiconductor device 100 of this example has a built-in resistor unit 210 in the AA' cross section.

[0102] The built-in resistor 210 is disposed above the upper surface 21 of the semiconductor substrate 10. The built-in resistor 210 may be provided at the same height as the gate wiring 50. In this example, the built-in resistor 210 overlaps both the current detection electrode 214 and the current detection pad 114.

[0103] The built-in resistor 210 is electrically connected to the current detection electrode 214 and the current detection unit 26 by a first connection 221. The first connection 221 is provided to penetrate the interlayer insulating film 38 from the current detection electrode 214 to the built-in resistor 210 and is in contact with the surface of the built-in resistor 210. The built-in resistor 210 is electrically connected to the current detection pad 114 by a second connection 222. The second connection 222 is provided to penetrate the interlayer insulating film 38 from the current detection pad 114 to the built-in resistor 210 and is in contact with the surface of the built-in resistor 210.

[0104] The first connection portion 221 and the second connection portion 222 may be arranged side by side in the first direction (X-axis direction). In other words, the positions of the first connection portion 221 and the second connection portion 222 in the second direction (Y-axis direction) may be the same. The first connection portion 221 may have a long side in the Y-axis direction or may have a long side in the X-axis direction. The second connection portion 222 may have a long side in the Y-axis direction or may have a long side in the X-axis direction. In the example of FIG. 8 , one first connection portion 221 and one second connection portion 222 are provided. A plurality of first connection portions 221 and a plurality of second connection portions 222 may be arranged side by side, as described below.

[0105] At least a portion of the gate wiring 50 may overlap with the sense well region 28. In this example, the entire gate wiring 50 overlaps with the sense well region 28. At least a portion of the built-in resistor 210 may overlap with the pad well region 25. In this example, the entire built-in resistor 210 overlaps with the pad well region 25.

[0106] 9 is a diagram showing an example of a P region according to the second embodiment. The semiconductor device 100 of this embodiment differs from the first embodiment in the arrangement of the first connection portion 221 and the second connection portion 222. The other structures are the same as those of the first embodiment. The B-B' cross section in each embodiment is the same as the example in FIG. 6, so a description thereof will be omitted.

[0107] The built-in resistor 210 has a longitudinal direction in the second direction (Y-axis direction). In this example, the first connection portion 221 and the second connection portion 222 are disposed at different positions in the Y-axis direction. This increases the distance from the first connection portion 221 to the second connection portion 222, thereby increasing the resistance value from the first connection portion 221 to the second connection portion 222.

[0108] The current detection electrode 214 may have a first extension portion that extends to a position overlapping with the first connection portion 221. The current detection pad 114 may have a second extension portion that extends to a position overlapping with the second connection portion 222.

[0109] The gate wiring 50 arranged in parallel with the built-in resistor 210 in the X-axis direction may also have a longitudinal direction in the Y-axis direction. The length of the built-in resistor 210 in the Y-axis direction may be longer or shorter than that of the gate wiring 50 arranged in parallel.

[0110] 10 is an enlarged view of the built-in resistor 210. The center position of the built-in resistor 210 in the Y-axis direction is designated Zc, and the two end positions of the built-in resistor 210 are designated Z1 and Z2. Furthermore, the regions obtained by equally dividing the built-in resistor 210 in the Y-axis direction are designated as a first region 231 and a second region 232. In this example, the first region 231 is the region from position Zc to Z1, and the second region 232 is the region from position Zc to Z2.

[0111] The first connection portion 221 may be disposed in the first region 231, and the second connection portion 222 may be disposed in the second region 232. This increases the distance between the first connection portion 221 and the second connection portion 222, and increases the resistance value between the first connection portion 221 and the second connection portion 222. The distance D in the Y-axis direction between the first connection portion 221 and the second connection portion 222 may be equal to or greater than half, or may be equal to or greater than three-quarters, of the length L of the built-in resistor 210 in the Y-axis direction.

[0112] The width W of the built-in resistor 210 in the X-axis direction may be the same as or different from the width of the gate wiring 50 arranged side by side. The width W of the built-in resistor 210 in the X-axis direction may be less than 100%, 50% or less, or 25% or less of the width of the gate wiring 50 arranged side by side in the X-axis direction. By reducing the width W of the built-in resistor 210, the resistance value between the first connection portion 221 and the second connection portion 222 can be increased.

[0113] A plurality of first connection portions 221 may be arranged side by side. In the example of FIG. 10 , a plurality of first connection portions 221 are arranged side by side in the X-axis direction. The width of each first connection portion 221 in the X-axis direction is defined as x, the length in the Y-axis direction is defined as y, and the spacing between the first connection portions 221 in the X-axis direction is defined as p. The width x may be 0.4 μm or more and 0.5 μm or less. The length y may be 4 μm or more and 8 μm or less. The spacing p may be 1 μm or more and 2 μm or less. The number of first connection portions 221 may be two or more and six or less. A plurality of second connection portions 222 may also be arranged side by side. The arrangement, number, width, length, and spacing of the second connection portions 222 in the X-axis direction may be similar to those of the first connection portions 221.

[0114] Fig. 11 is a diagram showing an example of the AA' cross section in Fig. 9. The AA' cross section is an XZ plane that passes through the first connection portion 221. In this cross section, the built-in resistor 210 and the current detection electrode 214 are connected by the first connection portion 221.

[0115] Fig. 12 is a diagram showing an example of the CC' cross section of Fig. 9. The CC' cross section is an XZ plane that passes through the second connection portion 222. In this cross section, the built-in resistor portion 210 and the current detection pad 114 are connected by the second connection portion 222.

[0116] The second connection portion 222 may or may not be disposed opposite the current detection portion 26 in the X-axis direction. In this example, the second connection portion 222 is disposed opposite the gate wiring 50 disposed between the current detection portion 26 and the transistor portion 70 in the X-axis direction. This allows the second connection portion 222 to be disposed away from the first connection portion 221.

[0117] FIG. 13 is a diagram showing an example of a P region according to the third embodiment. In this embodiment, the arrangement of the gate wiring 50 and the built-in resistor 210 differs from that of the first and second embodiments. The other structures are the same as those of either the first or second embodiment. In the example of FIG. 13, the first connecting portion 221 and the second connecting portion 222 are arranged in the same manner as in the second embodiment, but the first connecting portion 221 and the second connecting portion 222 may also be arranged in the same manner as in the first embodiment.

[0118] In this example, a plurality of gate wirings 50 are provided side by side in the X-axis direction between the current detection unit 26 and the current detection pad 114. The gate wirings 50 are connected to each other at their ends in the Y-axis direction.

[0119] The built-in resistor 210 of this example is sandwiched between two gate wirings 50 in the X-axis direction between the current detection unit 26 and the current detection pad 114. The built-in resistor 210 may also be sandwiched between gate wirings 50 in the Y-axis direction. The built-in resistor 210 of this example is disposed surrounded by the gate wirings 50.

[0120] Fig. 14 is a diagram showing an example of the AA' cross section of Fig. 13. The AA' cross section is an XZ plane passing through the first connection portion 221. As described in Fig. 13, the built-in resistor 210 is disposed between two gate wirings 50. In this cross section, the built-in resistor 210 and the current detection electrode 214 are connected by the first connection portion 221.

[0121] At least a portion of the gate wiring 50 between the built-in resistor 210 and the current detection unit 26 may overlap with the sense well region 28. In this example, the entire gate wiring 50 overlaps with the sense well region 28. At least a portion of the built-in resistor 210 may overlap with the pad well region 25. In this example, the entire built-in resistor 210 overlaps with the pad well region 25. At least a portion of the gate wiring 50 between the built-in resistor 210 and the current detection pad 114 may overlap with the pad well region 25. In this example, the entire gate wiring 50 overlaps with the pad well region 25.

[0122] Fig. 15 is a diagram showing an example of the CC' cross section of Fig. 13. The CC' cross section is an XZ plane passing through the second connection portion 222. As described in Fig. 13, the built-in resistor 210 is disposed between two gate wirings 50. In this cross section, the built-in resistor 210 and the current detection pad 114 are connected by the second connection portion 222.

[0123] FIG. 16 is a diagram showing an example of a P region according to the fourth embodiment. In this embodiment, the arrangement of the gate wiring 50 and the built-in resistor 210 differs from that of the first and second embodiments. The other structures are the same as those of either the first or second embodiment. In the example of FIG. 16, the first connecting portion 221 and the second connecting portion 222 are arranged in the same manner as in the second embodiment, but the first connecting portion 221 and the second connecting portion 222 may also be arranged in the same manner as in the first embodiment.

[0124] The gate wiring 50 in this example is disposed between the built-in resistor 210 and the current detection pad 114. At least a portion of the gate wiring 50 may overlap the current detection pad 114. The built-in resistor 210 in this example is sandwiched between the gate wirings 50 in the Y-axis direction.

[0125] Fig. 17 is a diagram showing an example of the AA' cross section of Fig. 16. The AA' cross section is an XZ plane passing through the first connection portion 221. As described in Fig. 16, the built-in resistor 210 is disposed between the gate wiring 50 and the current detection electrode 214. In this cross section, the built-in resistor 210 and the current detection electrode 214 are connected by the first connection portion 221.

[0126] At least a portion of the gate wiring 50 may overlap with the pad well region 25. In this example, the entire gate wiring 50 overlaps with the pad well region 25. At least a portion of the built-in resistor 210 may overlap with the sense well region 28. In this example, the entire built-in resistor 210 overlaps with the sense well region 28.

[0127] Fig. 18 is a diagram showing an example of the CC' cross section of Fig. 16. The CC' cross section is an XZ plane that passes through the second connection portion 222. In this cross section, the built-in resistor portion 210 and the current detection pad 114 are connected by the second connection portion 222.

[0128] 7 to 18 have a linear shape extending in the Y-axis direction. Other examples of the built-in resistor 210 may have a portion extending in the Y-axis direction and a portion extending in a direction different from the Y-axis direction. In other words, the built-in resistor 210 may have a bent shape in top view.

[0129] 13 , in which the built-in resistor 210 is surrounded by the gate wiring 50, the built-in resistor 210 may have a portion extending in the X-axis direction between the current detection unit 26 and the transistor unit 70. In this case, one of the first connection portion 221 and the second connection portion 222 may be disposed between the current detection unit 26 and the transistor unit 70, and the other connection portion may be disposed between the current detection unit 26 and the current detection pad 114. This allows the length of the built-in resistor 210 between the first connection portion 221 and the second connection portion 222 to be further increased, thereby increasing the resistance value.

[0130] The built-in resistor 210 extending in the X-axis direction may be sandwiched between two gate wirings 50 in the Y-axis direction. The gate wiring 50 between the built-in resistor 210 and the transistor section 70 may be connected to the gate conductive portion 44 of the transistor section 70. The gate wiring 50 between the built-in resistor 210 and the current detection section 26 may be connected to the gate conductive portion 44 of the current detection section 26.

[0131] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the claims that such modifications and improvements can also be included within the technical scope of the present invention.

[0132] 10...Semiconductor substrate, 12...Emitter region, 14...Base region, 18...Drift region, 21...Upper surface, 22...Collector region, 23...Lower surface, 24...Collector electrode, 25...Pad well region, 26...Current detection portion, 27...Active well region, 28...Sense well region, 29...Active well region, 38...Interlayer insulating film, 40...Trench portion, 42...Gate insulating film, 44...Gate conductive portion, 50...Gate wiring, 52...Emitter electrode, 70...Transistor portion, 80...Diode portion, 90...Edge termination structure portion, 1 00...semiconductor device, 110...pad portion, 111...temperature sensing portion, 112...temperature sensing wiring, 114...current detection pad, 115...auxiliary emitter pad, 116...gate pad, 117...cathode pad, 118...anode pad, 120...active portion, 140...peripheral edge, 142...edge, 200...semiconductor module, 201...gate drive circuit, 206...external resistor portion, 210...built-in resistor portion, 214...current detection electrode, 221...first connection portion, 222...second connection portion, 231...first region, 232...second region

Claims

1. A semiconductor device including a semiconductor substrate, a transistor portion provided inside the semiconductor substrate and having a gate conductive portion; a current detection section provided inside the semiconductor substrate, through which a detection current corresponding to a main current of the transistor section flows; a current detection pad disposed above the semiconductor substrate and arranged alongside the current detection unit in a first direction; a built-in resistor portion provided above the semiconductor substrate and connecting the current detection portion and the current detection pad; a gate wiring disposed above the semiconductor substrate and connected to the gate conductive portion; Equipped with The built-in resistor and the gate wiring are arranged side by side in the first direction between the current detection unit and the current detection pad. Semiconductor device.

2. The built-in resistor and the gate wiring are made of polysilicon. The semiconductor device according to claim 1 .

3. The thickness of the built-in resistor portion and the thickness of the gate wiring are the same. The semiconductor device according to claim 2 .

4. The built-in resistor portion has a longitudinal direction in a second direction different from the first direction when viewed from above. The semiconductor device according to claim 1 .

5. a first connection portion that contacts the built-in resistor portion and electrically connects the built-in resistor portion and the current detection portion; a second connection portion that contacts the built-in resistor portion and electrically connects the built-in resistor portion and the current detection pad; Further provided with The first connection portion and the second connection portion are disposed at different positions in the second direction. The semiconductor device according to claim 4 .

6. the first connection portion is disposed in a first region of a first region and a second region obtained by equally dividing the built-in resistor in the second direction; The second connection portion is disposed in the second region. The semiconductor device according to claim 5 .

7. The gate wiring has a longitudinal direction in the second direction. The semiconductor device according to claim 4 .

8. The gate wiring is disposed between the built-in resistor and the current detection unit. The semiconductor device according to claim 7 .

9. The gate wiring is disposed between the built-in resistor and the current detection pad. The semiconductor device according to claim 7 .

10. a plurality of the gate wirings are provided side by side in the first direction between the current detection unit and the current detection pad, The built-in resistor is sandwiched between the two gate wirings and between the current detection section and the current detection pad. The semiconductor device according to claim 7 .

11. The current detection pad is not in contact with the semiconductor substrate. The semiconductor device according to claim 1 .

12. The transistor section a first conductivity type drift region provided inside the semiconductor substrate; an emitter region of a first conductivity type disposed above the drift region within the semiconductor substrate and having a higher concentration than the drift region; a base region of a second conductivity type disposed within the semiconductor substrate between the drift region and the emitter region; and a pad well region of a second conductivity type provided inside the semiconductor substrate and extending from the upper surface of the semiconductor substrate to a depth deeper than the base region; The pad well region overlaps at least a portion of the current detection pad in a top view. The semiconductor device according to claim 1 .

13. The pad well region overlaps the entire current detection pad in a top view. The semiconductor device according to claim 12.

14. The transistor section a first conductivity type drift region provided inside the semiconductor substrate; an emitter region of a first conductivity type disposed above the drift region within the semiconductor substrate and having a higher concentration than the drift region; a base region of a second conductivity type disposed within the semiconductor substrate between the drift region and the emitter region; and a second conductivity type well region provided inside the semiconductor substrate and extending from the upper surface of the semiconductor substrate to a depth greater than that of the base region; The well region overlaps at least a part of the built-in resistor in a top view. The semiconductor device according to claim 1 .

15. The well region overlaps the entire built-in resistor portion in a top view. The semiconductor device according to claim 14.

16. The resistance value of the built-in resistor is greater than the resistance value of the built-in resistor and the external resistor connected in series with the current detection pad. The semiconductor device according to claim 1 .

17. The current detection pad is arranged from a position overlapping with the built-in resistor portion in a top view to a position farther from the current detection portion in the first direction than the built-in resistor portion. The semiconductor device according to claim 1 .

18. In a second direction perpendicular to the first direction in a top view, the length of the current detection pad is greater than the length of the current detection unit. The semiconductor device according to claim 1 .

19. The gate wiring surrounds the current detection unit in a top view. The semiconductor device according to claim 1 .

20. The current detection unit is arranged alongside the transistor unit in a second direction perpendicular to the first direction in a top view. The semiconductor device according to claim 1 .

21. The transistor section a first conductivity type drift region provided inside the semiconductor substrate; an emitter region of a first conductivity type disposed above the drift region within the semiconductor substrate and having a higher concentration than the drift region; a base region of a second conductivity type disposed within the semiconductor substrate between the drift region and the emitter region; and a second conductivity type well region provided inside the semiconductor substrate and extending from the upper surface of the semiconductor substrate to a depth greater than that of the base region; The well region overlaps at least a part of the gate wiring when viewed from above. The semiconductor device according to claim 1 .

22. A semiconductor module including a semiconductor device including a semiconductor substrate and an external resistor connected to the semiconductor device, The semiconductor device includes: a transistor portion provided inside the semiconductor substrate and having a gate conductive portion; a current detection section provided inside the semiconductor substrate, through which a detection current corresponding to a main current of the transistor section flows; a current detection pad disposed above the semiconductor substrate; a built-in resistor portion provided above the semiconductor substrate and connecting the current detection portion and the current detection pad; and The external resistor is connected in series with the built-in resistor and the current detection pad. Semiconductor module.

23. The resistance value of the built-in resistor is greater than the resistance value of the external resistor. The semiconductor module according to claim 22.

24. The resistance value of the built-in resistor is 3 times or more and 10 times or less than the resistance value of the external resistor. The semiconductor module according to claim 23.

25. The resistance value of the built-in resistor is 6Ω or more.

25. The semiconductor module according to claim 23 or 24.

26. The resistance value of the built-in resistor is 20Ω or less.

26. The semiconductor module according to claim 25.

27. The resistance value (Ω) of the built-in resistor is Ir / 50 or more, where Ir (A) is the rated current of the semiconductor device.

25. The semiconductor module according to claim 23 or 24.

28. The resistance value of the built-in resistor is Ir / 15 or less.

28. The semiconductor module according to claim 27.