Template substrate, method for manufacturing the same, and semiconductor substrate

JPWO2025063259A5Pending Publication Date: 2026-06-08
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Filing Date
2026-03-05
Publication Date
2026-06-08
Patent Text Reader

Abstract

The present invention reduces the silicon concentration of a nitride semiconductor region when the nitride semiconductor region is formed by using a template substrate. This template substrate comprises: a base substrate; a mask pattern located on the base substrate and including a silicon-containing silicon-based mask and a first opening; an aluminum-containing semiconductor mask located on the silicon-based mask; and a seed part having an Al-based semiconductor layer that includes a main component of the semiconductor mask and overlaps the first opening.
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