Semiconductor device, and package of semiconductor device

Abstract

This semiconductor device is configured so as to improve bonding strength to a wiring board. The semiconductor device includes a first lead, a semiconductor element, and a sealing resin. The semiconductor element is electrically connected to the first lead. The sealing resin covers a part of the first lead and the semiconductor element. The first lead has a first outer part that protrudes from the sealing resin. The first outer part has a first mounting surface that faces one side in a first direction. The first outer part is provided with a first opening that penetrates through the first outer part from the first mounting surface.

Description

Semiconductor device and semiconductor device package

[0001] The present disclosure relates to a semiconductor device and a semiconductor device package in which the semiconductor device is mounted on a wiring board.

[0002] Patent Document 1 discloses an example of a semiconductor device including a first lead and a second lead, a semiconductor element conductively bonded to each of the first lead and the second lead, and a sealing resin covering the semiconductor element. The second lead carries the semiconductor element. A portion of each of the first lead and the second lead is exposed from the sealing resin. The portions of the first lead and the second lead exposed from the sealing resin are covered with an exterior plating layer. The exterior plating layer contains tin. This allows solder to more easily adhere to the portions of the first lead and the second lead exposed from the sealing resin when the semiconductor device is mounted on a wiring board. This increases the contact area of ​​each of the first lead and the second lead with the solder.

[0003] When attempting to miniaturize the semiconductor device disclosed in Patent Document 1, the surface area of ​​each of the first and second leads exposed from the sealing resin becomes smaller, which raises concerns about a decrease in the bonding strength (mounting strength) of the semiconductor device to the wiring board.

[0004] Japanese Patent Application Laid-Open No. 2017-168553

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can improve the bonding strength of the device to a wiring substrate.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a first lead, a semiconductor element electrically connected to the first lead, and a sealing resin covering a portion of the first lead and the semiconductor element. The first lead has a first outer part protruding from the sealing resin. The first outer part has a first mounting surface facing one side in a first direction. The first outer part has a first opening extending from the first mounting surface through the first outer part.

[0007] A semiconductor device package provided by a second aspect of the present disclosure includes the semiconductor device provided by the first aspect of the present disclosure, a wiring board facing the first mounting surface, and a bonding layer that conductively bonds the wiring board and the first outer part. The bonding layer includes a first bonding portion accommodated in the first opening, a second bonding portion located on the opposite side of the first bonding portion relative to the first end surface in the second direction, and a third bonding portion located on the opposite side of the first mounting surface relative to the first back surface in the first direction. The third bonding portion is connected to the first bonding portion and the second bonding portion.

[0008] A semiconductor device package provided by a third aspect of the present disclosure includes the semiconductor device provided by the first aspect of the present disclosure, a wiring board facing the first mounting surface, and a bonding layer that conductively bonds the wiring board and the first outer part. The bonding layer includes a first bonding portion housed in the first opening, a second bonding portion housed in the second opening, and a third bonding portion located on the opposite side of the first mounting surface with respect to the first back surface in the first direction. The third bonding portion is connected to the first bonding portion and the second bonding portion.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0010] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view corresponding to FIG. 1 , seen through a sealing resin. FIG. 3 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 4 is a front view of the semiconductor device shown in FIG. 1. FIG. 5 is a left side view of the semiconductor device shown in FIG. 1. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 2. FIG. 9 is a bottom view of a semiconductor device according to a modified example of the first embodiment of the present disclosure. FIG. 10 is a cross-sectional view of the semiconductor device shown in FIG. 9 and corresponds to FIG. 8. FIG. 11 is a cross-sectional view of a package of the semiconductor device according to the first embodiment of the present disclosure. FIG. 12 is a partially enlarged cross-sectional view of the package of the semiconductor device shown in FIG. 11. FIG. 13 is a bottom view of a semiconductor device according to a second embodiment of the present disclosure. FIG. 14 is a left side view of the semiconductor device shown in FIG. 13. FIG. 15 is a cross-sectional view of the semiconductor device shown in FIG. 13 and corresponds to FIG. 6. FIG. 16 is a cross-sectional view of the semiconductor device shown in FIG. 13 and corresponds to FIG. 7 . FIG. 17 is a partially enlarged cross-sectional view of a semiconductor device package according to a second embodiment of the present disclosure. FIG. 18 is a bottom view of a semiconductor device according to a third embodiment of the present disclosure. FIG. 19 is a left side view of the semiconductor device shown in FIG. 18 . FIG. 20 is a cross-sectional view of the semiconductor device shown in FIG. 18 and corresponds to FIG. 8 . FIG. 21 is a partially enlarged cross-sectional view of a semiconductor device package according to the third embodiment of the present disclosure. FIG. 22 is a bottom view of a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 23 is a cross-sectional view of the semiconductor device shown in FIG. 22 and corresponds to FIG. 6 . FIG. 24 is a partially enlarged cross-sectional view of a semiconductor device package according to the fourth embodiment of the present disclosure. FIG. 25 is a bottom view of a semiconductor device according to a fifth embodiment of the present disclosure. FIG. 26 is a cross-sectional view of the semiconductor device shown in FIG. 25 and corresponds to FIG. 6 . FIG. 27 is a cross-sectional view of the semiconductor device shown in FIG. 25 and corresponds to FIG. 8 . FIG. 28 is a bottom view of a semiconductor device according to a first modified example of the fifth embodiment of the present disclosure. Fig. 29 is a cross-sectional view of the semiconductor device shown in Fig. 28 and corresponds to Fig. 26. Fig. 30 is a bottom view of a semiconductor device according to a second modification of the fifth embodiment of the present disclosure. Fig. 31 is a cross-sectional view of the semiconductor device shown in Fig. 30 and corresponds to Fig. 27.Fig. 32 is a partially enlarged cross-sectional view of a semiconductor device package according to a fifth embodiment of the present disclosure. Fig. 33 is a bottom view of a semiconductor device according to a sixth embodiment of the present disclosure. Fig. 34 is a cross-sectional view of the semiconductor device shown in Fig. 33 and corresponds to Fig. 6 . Fig. 35 is a partially enlarged cross-sectional view of a semiconductor device package according to the sixth embodiment of the present disclosure. Fig. 36 is a plan view of a semiconductor device according to a seventh embodiment of the present disclosure. Fig. 37 is a bottom view of the semiconductor device shown in Fig. 36 . Fig. 38 is a cross-sectional view of the semiconductor device shown in Fig. 36 and corresponds to Fig. 8 .

[0011] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0012] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to Figures 1 to 8. The semiconductor device A10 includes a semiconductor element 10, a first lead 20, a second lead 30, a conductive member 40, a first bonding layer 51, a second bonding layer 52, a third bonding layer 53, a sealing resin 60, a first protective layer 71, and a second protective layer 72. The semiconductor device A10 is a resin package that is surface-mounted on a wiring substrate 80 (described below). For ease of understanding, Figure 2 shows the sealing resin 60 in perspective. In Figure 2, the sealing resin 60 is indicated by an imaginary line (double-dashed line).

[0013] In the following description, for convenience, the normal direction to a top surface 61 of a sealing resin 60 (described later) will be referred to as the "first direction z." A direction perpendicular to the first direction z will be referred to as the "second direction x." A direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y."

[0014] As shown in FIG. 8 , the sealing resin 60 covers the semiconductor element 10 and the conductive member 40. Furthermore, the sealing resin 60 covers a portion of each of the first lead 20 and the second lead 30. The sealing resin 60 has electrical insulation properties. The sealing resin 60 is made of a material containing, for example, black epoxy resin. As shown in FIG. 4 , the sealing resin 60 has a top surface 61, a bottom surface 62, a first side surface 63, and a second side surface 64.

[0015] 6 and 8, the top surface 61 faces the same side in the first direction z as a mounting surface 211 of a first inner portion 21 of a first lead 20, which will be described later. The bottom surface 62 faces the opposite side to the top surface 61 in the first direction z.

[0016] 1 and 4, the second side surface 64 and the first side surface 63 face in opposite directions in the third direction y. The first side surface 63 and the second side surface 64 are connected to the top surface 61 and the bottom surface 62, respectively.

[0017] 2 and 8, the semiconductor element 10 is mounted on a first lead 20. The semiconductor element 10 is electrically connected to both the first lead 20 and the second lead 30. In the semiconductor device A10, the semiconductor element 10 is a Schottky barrier diode. Alternatively, the semiconductor element 10 may be a diode other than a Schottky barrier diode, a transistor, or any other suitable element.

[0018] As shown in FIG. 8 , the semiconductor element 10 has a first electrode 11 and a second electrode 12. The first electrode 11 and the second electrode 12 are located on opposite sides of each other in the first direction z. The first electrode 11 is electrically connected to the second lead 30. The first electrode 11 is an anode. The first electrode 11 is formed, for example, by stacking a nickel (Ni) layer and a palladium (Pd) layer on an aluminum (Al) layer in this order. In the semiconductor device A10, a Schottky barrier is formed by interposing a metal thin film between the semiconductor layer constituting the semiconductor element 10 and the first electrode 11. The metal thin film is made of, for example, molybdenum (Mo) or titanium (Ti). The second electrode 12 is electrically connected to the first lead 20. The second electrode 12 is a cathode.

[0019] The first lead 20, the second lead 30, and the conductive member 40 each form a conductive path between the semiconductor element 10 and a wiring board on which the semiconductor device A10 is mounted. Of these, the first lead 20 and the second lead 30 are obtained from the same lead frame and correspond to terminals mounted on the wiring board. Each of the first lead 20, the second lead 30, and the conductive member 40 contains copper (Cu).

[0020] As shown in FIGS. 1 and 2 , the first lead 20 is located on one side in the third direction y. The first lead 20 has a first inner portion 21 and a first outer portion 22. The first inner portion 21 is covered with a sealing resin 60. In the semiconductor device A10, the entire first inner portion 21 is covered with the sealing resin 60. Alternatively, a portion of the first inner portion 21 may be exposed from a bottom surface 62 of the sealing resin 60. The first outer portion 22 is connected to the first inner portion 21. The first outer portion 22 protrudes from a first side surface 63 of the sealing resin 60. As shown in FIG. 4 , the first outer portion 22 is bent around the second direction x so as to fit along the first side surface 63 and the bottom surface 62 of the sealing resin 60.

[0021] As shown in FIG. 8 , the first inner portion 21 has a mounting surface 211 and an inclined surface 212. The mounting surface 211 faces the same side as the top surface 61 of the sealing resin 60 in the first direction z. The mounting surface 211 faces the first electrode 11 of the semiconductor element 10. In the first direction z, the mounting surface 211 is located between the bottom surface 62 of the sealing resin 60 and a third bonding surface 311 of the second lead 30 (described later). The inclined surface 212 is located on the opposite side of the second lead 30 with respect to the mounting surface 211 in the third direction y and is connected to the mounting surface 211. The inclined surface 212 is inclined with respect to the mounting surface 211. As viewed in the third direction y, the inclined surface 212 overlaps the semiconductor element 10. As shown in FIG. 2 , the first inner portion 21 has two through portions 213. The two through portions 213 are spaced apart from each other in the second direction x. Each of the two through-holes 213 penetrates the first inner part 21 from the inclined surface 212. The penetration direction of each of the two through-holes 213 is the same as the normal direction of the inclined surface 212.

[0022] 3 to 6 and 8, the first outer part 22 has a first mounting part 221 and a first intermediate part 222. The first mounting part 221 is located on the opposite side of the first intermediate part 222 from the first inner part 21. The first mounting part 221 faces the sealing resin 60. The first intermediate part 222 rises from the first mounting part 221 in the first direction z. The first intermediate part 222 is connected to the first inner part 21.

[0023] As shown in FIGS. 6 and 8 , the first mounting portion 221 has a first mounting surface 221A, a first back surface 221B, a first end surface 221C, a second end surface 221D, and a third end surface 221E. The first mounting surface 221A faces one side in the first direction z. The first back surface 221B faces the opposite side from the first mounting surface 221A in the first direction z. The first back surface 221B faces the bottom surface 62 of the sealing resin 60. A gap is provided between the first back surface 221B and the bottom surface 62 in the first direction z. The first end surface 221C and the second end surface 221D face opposite sides to each other in the second direction x. The third end surface 221E faces the opposite side from the side on which the first intermediate portion 222 is located relative to the first mounting portion 221 in the third direction y.

[0024] As shown in FIGS. 1 to 3, 5, and 6, the first mounting portion 221 has a first opening 23 and a second opening 24. The first opening 23 and the second opening 24 each penetrate from the first mounting surface 221A of the first mounting portion 221 through the first outer portion 22. The second opening 24 is spaced apart from the first opening 23 in the second direction x. The first opening 23 is spaced apart from the first end surface 221C of the first mounting portion 221. The second opening 24 is spaced apart from the second end surface 221D of the first mounting portion 221. The second opening 24 is located between the first end surface 221C and the first opening 23 in the second direction x. In the semiconductor device A10, the first opening 23 and the second opening 24 are located inward from the periphery of the first mounting portion 221 when viewed in the first direction z. When viewed in the first direction z, the first opening 23 and the second opening 24 overlap with the sealing resin 60 .

[0025] 6 and 8 , the first mounting portion 221 has an inner circumferential surface 231 that defines the first opening 23. The inner circumferential surface 231 is connected to the first mounting surface 221A and the first back surface 221B of the first mounting portion 221. In the semiconductor device A10, the size of the cross section of the first opening 23 perpendicular to the first direction z is uniform from the first mounting surface 221A to the first back surface 221B.

[0026] As shown in FIGS. 6 and 8 , the first protective layer 71 covers at least a portion of the first outer portion 22 of the first lead 20. In the semiconductor device A10, the first protective layer 71 covers the first mounting portion 221 except for the third end face 221E and the entire first intermediate portion 222. Therefore, the first protective layer 71 covers the first mounting surface 221A, the first back surface 221B, the first end face 221C, the second end face 221D, and the inner circumferential surface 231 of the first mounting portion 221. The first protective layer 71 is a conductor. The first protective layer 71 is a metal containing tin (Sn), for example. Alternatively, the first protective layer 71 may be a plurality of metal layers stacked in this order from the closest to the first outer portion 22: a nickel layer, a palladium layer, and a gold (Au) layer.

[0027] As shown in FIGS. 1 and 2 , the second lead 30 is spaced from the first lead 20 in the third direction y. The second lead 30 has a second inner part 31 and a second outer part 32. The second inner part 31 is covered with a sealing resin 60. The second inner part 31 has a third bonding surface 311 that faces the same side as the top surface 61 of the sealing resin 60 in the first direction z. The first outer part 22 is connected to the first inner part 21. The first outer part 22 protrudes from a second side surface 64 of the sealing resin 60. As shown in FIG. 4 , the first outer part 22 is bent around the second direction x so as to fit along the second side surface 64 and bottom surface 62 of the sealing resin 60.

[0028] 3 to 5, 7, and 8, the second outer part 32 has a second mounting part 321 and a second intermediate part 322. The second mounting part 321 is located on the opposite side of the second intermediate part 322 from the second inner part 31. The second mounting part 321 faces the sealing resin 60. The second intermediate part 322 rises from the second mounting part 321 in the first direction z. The second intermediate part 322 is connected to the second inner part 31.

[0029] 7 and 8 , the second mounting portion 321 has a second mounting surface 321A, a second back surface 321B, a fourth end surface 321C, a fifth end surface 321D, and a sixth end surface 321E. The second mounting surface 321A faces the same side as the first mounting surface 221A of the first outer portion 22 of the first lead 20 in the first direction z. The second back surface 321B faces the opposite side from the second mounting surface 321A in the first direction z. The second back surface 321B faces the bottom surface 62 of the sealing resin 60. A gap is provided between the second back surface 321B and the bottom surface 62 in the first direction z. The fourth end surface 321C and the fifth end surface 321D face opposite sides to each other in the second direction x. The sixth end surface 321E faces the opposite side to the side on which the second intermediate portion 322 is located with respect to the second mounting portion 321 in the third direction y.

[0030] As shown in FIGS. 1 to 3 and 7 , the second mounting portion 321 has a third opening 33 and a fourth opening 34. The third opening 33 and the fourth opening 34 each penetrate from the second mounting surface 321A of the second mounting portion 321 through the second outer portion 32. The fourth opening 34 is spaced apart from the third opening 33 in the second direction x. The third opening 33 is spaced apart from a fourth end surface 321C of the second mounting portion 321. The fourth opening 34 is spaced apart from a fifth end surface 321D of the second mounting portion 321. The fourth opening 34 is located between the fourth end surface 321C and the third opening 33 in the second direction x. In the semiconductor device A10, the third opening 33 and the fourth opening 34 are located inward from the periphery of the second mounting portion 321 when viewed in the first direction z. When viewed in the first direction z, the third opening 33 and the fourth opening 34 overlap with the sealing resin 60 .

[0031] As shown in Figures 7 and 8, the second protective layer 72 covers at least a portion of the second outer portion 32 of the second lead 30. In the semiconductor device A10, the second protective layer 72 covers a portion of the second mounting portion 321 except for the sixth end face 321E and the entire second intermediate portion 322. Therefore, the second protective layer 72 covers the second mounting surface 321A, the second back surface 321B, the fourth end face 321C, and the fifth end face 321D of the second mounting portion 321. The second protective layer 72 is a conductor. The composition of the second protective layer 72 is the same as the composition of the first protective layer 71.

[0032] 8 , the conductive member 40 is conductively bonded to each of the second inner portion 31 of the second lead 30 and the first electrode 11 of the semiconductor element 10. The conductive member 40 is a metal clip. The conductive member 40 has a first bonding surface 41 and a second bonding surface 42. The first bonding surface 41 faces the first electrode 11. The second bonding surface 42 faces the third bonding surface 311 of the second inner portion 31.

[0033] 8, the conductive member 40 has a protrusion 43 protruding from the first bonding surface 41. As shown in Fig. 2, the protrusion 43 overlaps the first electrode 11 of the semiconductor element 10 when viewed in the first direction z.

[0034] 8 , the first bonding layer 51 conductively bonds the first electrode 11 of the semiconductor element 10 to the conductive member 40. The first bonding layer 51 is made of solder. The first bonding layer 51 is located between the first electrode 11 and the protrusion 43 of the conductive member 40.

[0035] 7 and 8 , the second bonding layer 52 conductively bonds the second inner portion 31 of the second lead 30 to the conductive member 40. The second bonding layer 52 is made of solder. The second bonding layer 52 is located between the third bonding surface 311 of the second inner portion 31 and the second bonding surface 42 of the conductive member 40.

[0036] 8 , the third bonding layer 53 conductively bonds the first inner portion 21 of the first lead 20 and the second electrode 12 of the semiconductor element 10. The third bonding layer 53 is made of solder. The third bonding layer 53 is located between the mounting surface 211 of the first inner portion 21 and the second electrode 12.

[0037] Next, a semiconductor device A11, which is a modification of the semiconductor device A10, will be described with reference to Figures 9 and 10. The cross-sectional position of Figure 10 corresponds to the cross-sectional position of Figure 8.

[0038] 9 and 10 , the size of the cross section of the first opening 23 in a direction perpendicular to the first direction z increases from the first mounting surface 221A to the first back surface 221B of the first mounting portion 221. An inner circumferential surface 231 of the first mounting portion 221 that defines the first opening 23 is inclined with respect to the first mounting surface 221A.

[0039] Next, a semiconductor device assembly (hereinafter referred to as "assembly B10") according to the first embodiment of the present disclosure will be described with reference to Figures 11 and 12. The assembly B10 includes the semiconductor device A10, a wiring substrate 80, and a bonding layer 90.

[0040] The wiring substrate 80 is a mounting target for the semiconductor device A10. As shown in Fig. 11 , the wiring substrate 80 faces the first mounting surface 221A of the first outer part 22 of the first lead 20 and the second mounting surface 321A of the second outer part 32 of the second lead 30. The bonding layer 90 conductively bonds the wiring substrate 80 to the first outer part 22. The bonding layer 90 also conductively bonds the wiring substrate 80 to the second outer part 32. The bonding layer 90 is solder.

[0041] 12 , the bonding layer 90 includes a first bonding portion 91, a second bonding portion 92, and a third bonding portion 93. The first bonding portion 91 is housed in the first opening 23. The second bonding portion 92 is housed in the second opening 24. The third bonding portion 93 is located on the opposite side of the first mounting surface 221A of the first mounting portion 221 in the first direction z, with the first back surface 221B of the first mounting portion 221 of the first outer part 22 as the reference. The third bonding portion 93 is connected to the first bonding portion 91 and the second bonding portion 92. As a result, in the mounting body B10, the bonding layer 90 surrounds the portion of the first mounting portion 221 located between the first opening 23 and the second opening 24 when viewed in the third direction y.

[0042] Next, the effects of the semiconductor device A10 will be described.

[0043] The semiconductor device A10 includes a first lead 20, a semiconductor element 10, and a sealing resin 60. The first lead 20 has a first outer part 22 protruding from the sealing resin 60. The first outer part 22 has a first mounting surface 221A facing one side in the first direction z. The first outer part 22 has a first opening 23 penetrating the first outer part 22 from the first mounting surface 221A. With this configuration, in the mounting body B10 shown in FIG. 12 , a first bonding part 91, which is a part of the bonding layer 90, is housed in the first opening 23. This allows the bonding layer 90 to exhibit an anchoring effect with respect to the first outer part 22. Furthermore, in the mounting body B10, the bonding layer 90 surrounds the first outer part 22 when viewed in the first direction z. This restrains the first outer part 22 in the first direction z relative to the wiring substrate 80. Therefore, according to this configuration, the bonding strength between the semiconductor device A10 and the wiring substrate 80 can be improved.

[0044] The semiconductor device A10 further includes a first protective layer 71, which is a conductor and covers at least a portion of the first outer part 22. The first protective layer 71 covers the first end surface 221C of the first outer part 22. This configuration improves the wettability of the bonding layer 90 to the first outer part 22 in the mounting body B10 shown in FIG. 11 . Furthermore, a portion of the bonding layer 90 is more likely to creep up the first end surface 221C. This effectively improves the bonding strength of the semiconductor device A10 to the wiring substrate 80.

[0045] The first protective layer 71 covers the first back surface 221B of the first outer part 22. By adopting this configuration, the first protective layer 71 promotes the formation of the third bonding portion 93, which is part of the bonding layer 90, in the mounting body B10. This allows the first outer part 22 to be firmly restrained to the wiring board 80.

[0046] The first outer part 22 has an inner circumferential surface 231 that defines the first opening 23. The first protective layer 71 covers the inner circumferential surface 231. By adopting this configuration, the volume of the first bonding portion 91 can be further increased in the mounting body B10. This allows the first outer part 22 to be firmly restrained against the wiring board 80.

[0047] The first back surface 221B of the first outer part 22 faces the sealing resin 60. When viewed in the first direction z, the first opening 23 overlaps the sealing resin 60. In the first direction z, a gap is provided between the first back surface 221B and the sealing resin 60. By adopting this configuration, it is possible to prevent the sealing resin 60 from interfering with the formation of the third bonding portion 93 in the mounting body B10.

[0048] In the semiconductor device A11, the size of the cross section of the first opening 23 perpendicular to the first direction z increases from the first mounting surface 221A to the first back surface 221B of the first outer part 22. By adopting this configuration, in the mounting body B10, the bonding layer 90 that flows into the first opening 23 can easily reach the first back surface 221B. This further promotes the formation of the third bonding portion 93.

[0049] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 13 to 16. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, the cross-sectional position in Figure 15 corresponds to the cross-sectional position in Figure 6, which shows the semiconductor device A10. The cross-sectional position in Figure 16 corresponds to the cross-sectional position in Figure 7, which shows the semiconductor device A10.

[0050] In the semiconductor device A20, the configuration of the first outer portion 22 of the first lead 20 and the configuration of the second outer portion 32 of the second lead 30 are different from those of the semiconductor device A10.

[0051] 13 to 15, the first opening 23 provided in the first outer part 22 is connected to the second end surface 221D of the first mounting part 221. As a result, the first opening 23 opens from the second end surface 221D. The second opening 24 provided in the first outer part 22 is connected to the first end surface 221C of the first mounting part 221. As a result, the second opening 24 opens from the first end surface 221C.

[0052] 13 and 16 , the third opening 33 provided in the second outer part 32 is connected to the fifth end surface 321D of the second mounting part 321. As a result, the third opening 33 opens from the fifth end surface 321D. The fourth opening 34 provided in the second outer part 32 is connected to the fourth end surface 321C of the second mounting part 321. As a result, the fourth opening 34 opens from the fourth end surface 321C.

[0053] Next, a semiconductor device assembly according to a second embodiment of the present disclosure (hereinafter referred to as an assembly B20) will be described with reference to Fig. 17. The assembly B20 includes the semiconductor device A20, a wiring substrate 80, and a bonding layer 90.

[0054] 17 , the bonding layer 90 includes a first bonding portion 91, a second bonding portion 92, and a third bonding portion 93. As in the case of the mounting body B10, the third bonding portion 93 is connected to the first bonding portion 91 and the second bonding portion 92. As a result, in the mounting body B20, the bonding layer 90 surrounds the portion of the first mounting portion 221 located between the first opening 23 and the second opening 24 when viewed in the third direction y.

[0055] Next, the effects of the semiconductor device A20 will be described.

[0056] The semiconductor device A20 includes a first lead 20, a semiconductor element 10, and a sealing resin 60. The first lead 20 has a first outer part 22 protruding from the sealing resin 60. The first outer part 22 has a first mounting surface 221A facing one side in the first direction z. The first outer part 22 is provided with a first opening 23 that penetrates the first outer part 22 from the first mounting surface 221A. Therefore, with this configuration, the semiconductor device A20 can also improve the bonding strength of the semiconductor device A20 to the wiring substrate 80. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.

[0057] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 18 to 20. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. The cross-sectional position in Figure 20 corresponds to the cross-sectional position in Figure 8, which shows the semiconductor device A10.

[0058] In the semiconductor device A30, the configuration of the first outer portion 22 of the first lead 20 and the configuration of the second outer portion 32 of the second lead 30 are different from those of the semiconductor device A10.

[0059] As shown in Figures 18 to 20, the first opening 23 provided in the first outer part 22 includes a first portion 23A and a second portion 23B. The first portion 23A penetrates the first mounting portion 221 of the first outer part 22 in the first direction z. The second portion 23B is connected to the first portion 23A and penetrates the first intermediate portion 222 of the first outer part 22 in the third direction y. The second opening 24 provided in the first outer part 22 is separated from the first opening 23 in the third direction y. The second opening 24 is connected to a third end surface 221E of the first mounting portion 221. As a result, the second opening 24 opens from the third end surface 221E.

[0060] 18 and 20 , the third opening 33 provided in the second outer part 32 includes a third portion 33A and a fourth portion 33B. The third portion 33A penetrates the second mounting portion 321 of the second outer part 32 in the first direction z. The fourth portion 33B is connected to the third portion 33A and penetrates the second intermediate portion 322 of the second outer part 32 in the third direction y. The fourth opening 34 provided in the second outer part 32 is separated from the third opening 33 in the third direction y. The fourth opening 34 is connected to the third end surface 221E of the second mounting portion 321. As a result, the fourth opening 34 opens from the sixth end surface 321E.

[0061] Next, a semiconductor device assembly according to a third embodiment of the present disclosure (hereinafter referred to as an assembly B30) will be described with reference to Fig. 21. The assembly B30 includes the semiconductor device A30, a wiring substrate 80, and a bonding layer 90.

[0062] 21 , the bonding layer 90 includes a first bonding portion 91, a second bonding portion 92, and a third bonding portion 93. As in the case of the mounting body B10, the third bonding portion 93 is connected to the first bonding portion 91 and the second bonding portion 92. As a result, in the mounting body B30, the bonding layer 90 surrounds the portion of the first mounting portion 221 located between the first opening 23 and the second opening 24 when viewed in the second direction x.

[0063] Next, the effects of the semiconductor device A30 will be described.

[0064] The semiconductor device A30 includes a first lead 20, a semiconductor element 10, and a sealing resin 60. The first lead 20 has a first outer part 22 protruding from the sealing resin 60. The first outer part 22 has a first mounting surface 221A facing one side in the first direction z. The first outer part 22 is provided with a first opening 23 that penetrates the first outer part 22 from the first mounting surface 221A. Therefore, with this configuration, the semiconductor device A30 can also improve the bonding strength of the semiconductor device A30 to the wiring substrate 80. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.

[0065] In the semiconductor device A30, the first opening 23 provided in the first outer part 22 includes a first portion 23A that penetrates the first mounting portion 221 and a second portion 23B that is connected to the first portion 23A and penetrates the first intermediate portion 222. By adopting this configuration, the volume of the first bonding portion 91 accommodated in the first opening 23 is further increased in the mounting body B30 shown in FIG. 21 . This increases the anchoring effect exerted by the bonding layer 90 on the first outer part 22, and more firmly binds the first outer part 22 to the wiring substrate 80. This makes it possible to further improve the bonding strength of the semiconductor device A30 to the wiring substrate 80.

[0066] 22 and 23, a semiconductor device A40 according to a fourth embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. The cross-sectional position in FIG. 23 corresponds to the cross-sectional position in FIG. 6, which shows the semiconductor device A10.

[0067] In the semiconductor device A40, the configuration of the first outer portion 22 of the first lead 20 and the configuration of the second outer portion 32 of the second lead 30 are different from those of the semiconductor device A10.

[0068] 22 and 23 , the first outer part 22 does not have a second opening 24. When viewed in the first direction z, the first opening 23 is located at the center of the first mounting portion 221 of the first outer part 22. As shown in Fig. 22 , the second outer part 32 does not have a fourth opening 34. When viewed in the first direction z, the third opening 33 is located at the center of the second mounting portion 321 of the second outer part 32.

[0069] Next, a semiconductor device assembly according to a fourth embodiment of the present disclosure (hereinafter referred to as an assembly B40) will be described with reference to Fig. 24. The assembly B40 includes the semiconductor device A40, a wiring substrate 80, and a bonding layer 90.

[0070] As shown in FIG. 24 , the bonding layer 90 includes a first bonding portion 91, a second bonding portion 92, a third bonding portion 93, and a fourth bonding portion 94. The first bonding portion 91 is accommodated in the first opening 23. The second bonding portion 92 is located on the opposite side of the first bonding portion 91 in the second direction x, with respect to the first end surface 221C of the first mounting portion 221 of the first outer part 22. The third bonding portion 93 is located on the opposite side of the first mounting surface 221A of the first mounting portion 221 in the first direction z, with respect to the first back surface 221B of the first mounting portion 221 of the first outer part 22. The fourth bonding portion 94 is located on the opposite side of the first bonding portion 91, with respect to the second end surface 221D of the first mounting portion 221. The third bonding portion 93 is connected to the first bonding portion 91 and the second bonding portion 92. The third bonding portion 93 is also connected to the fourth bonding portion 94. As a result, in the mounting body B40, the bonding layer 90 surrounds the portion of the first mounting portion 221 located between the first opening 23 and the first end face 221C when viewed in the third direction y. In addition, the bonding layer 90 surrounds the portion of the first mounting portion 221 located between the first opening 23 and the second end face 221D when viewed in the third direction y.

[0071] Next, the effects of the semiconductor device A40 will be described.

[0072] The semiconductor device A40 includes a first lead 20, a semiconductor element 10, and a sealing resin 60. The first lead 20 has a first outer part 22 protruding from the sealing resin 60. The first outer part 22 has a first mounting surface 221A facing one side in the first direction z. The first outer part 22 is provided with a first opening 23 that penetrates the first outer part 22 from the first mounting surface 221A. Therefore, with this configuration, the semiconductor device A40 can also improve the bonding strength of the semiconductor device A40 to the wiring substrate 80. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A40 achieves the same effects as the semiconductor device A10.

[0073] Fifth Embodiment: A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described with reference to Figures 25 to 27. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, the cross-sectional position in Figure 26 corresponds to the cross-sectional position in Figure 6, which shows the semiconductor device A10. The cross-sectional position in Figure 27 corresponds to the cross-sectional position in Figure 8, which shows the semiconductor device A10.

[0074] In the semiconductor device A50, the configuration of the first outer portion 22 of the first lead 20 and the configuration of the second outer portion 32 of the second lead 30 are different from those of the semiconductor device A10.

[0075] 25 to 27 , the first mounting portion 221 of the first outer part 22 has a first recess 25 recessed from the first back surface 221B. The first recess 25 extends in the second direction x. The first recess 25 is connected to the first opening 23 and the second opening 24. The dimension of the first recess 25 in the third direction y is smaller than the dimensions of each of the first opening 23 and the second opening 24 in the third direction y. A portion of the first protective layer 71 is accommodated in the first recess 25.

[0076] 25 and 27 , the second mounting portion 321 of the second outer part 32 has a second recess 35 recessed from the second back surface 321B. The second recess 35 extends in the second direction x. The second recess 35 is connected to the third opening 33 and the fourth opening 34. The dimension of the second recess 35 in the third direction y is smaller than the dimensions of each of the third opening 33 and the fourth opening 34 in the third direction y. A portion of the second protective layer 72 is accommodated in the second recess 35.

[0077] Next, a semiconductor device A51, which is a first modification of the semiconductor device A50, will be described with reference to Figures 28 and 29. The cross-sectional position of Figure 29 corresponds to the cross-sectional position of Figure 26.

[0078] As shown in Figures 28 and 29, the semiconductor device A51 is configured such that, compared to the previously described semiconductor device A20, a first recess 25 and a second recess 35 are provided in the first mounting portion 221 of the first outer part 22 and the second mounting portion 321 of the second outer part 32, respectively.

[0079] Next, a semiconductor device A52, which is a second modification of the semiconductor device A50, will be described with reference to Figures 30 and 31. The cross-sectional position of Figure 31 corresponds to the cross-sectional position of Figure 27.

[0080] 30 and 31 , the semiconductor device A52 differs from the previously described semiconductor device A30 in that a first recess 25 and a second recess 35 are provided in the first mounting portion 221 of the first outer part 22 and the second mounting portion 321 of the second outer part 32, respectively. Each of the first recess 25 and the second recess 35 extends in the third direction y.

[0081] Next, a semiconductor device assembly according to a fifth embodiment of the present disclosure (hereinafter referred to as an assembly B50) will be described with reference to Fig. 32. The assembly B50 includes the semiconductor device A50, a wiring substrate 80, and a bonding layer 90.

[0082] 32 , the bonding layer 90 includes a first bonding portion 91, a second bonding portion 92, and a third bonding portion 93. As in the case of the mounting body B10, the third bonding portion 93 is connected to the first bonding portion 91 and the second bonding portion 92. As a result, in the mounting body B50, the bonding layer 90 surrounds the portion of the first mounting portion 221 located between the first opening 23 and the second opening 24 when viewed in the third direction y. Furthermore, in the mounting body B50, a portion of the third bonding portion 93 is housed in the first recess 25.

[0083] Next, the effects of the semiconductor device A50 will be described.

[0084] The semiconductor device A50 includes a first lead 20, a semiconductor element 10, and a sealing resin 60. The first lead 20 has a first outer part 22 protruding from the sealing resin 60. The first outer part 22 has a first mounting surface 221A facing one side in the first direction z. The first outer part 22 is provided with a first opening 23 that penetrates the first outer part 22 from the first mounting surface 221A. Therefore, with this configuration, the semiconductor device A50 can also improve the bonding strength of the semiconductor device A50 to the wiring substrate 80. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A50 achieves the same effects as the semiconductor device A10.

[0085] In the semiconductor device A50, the first mounting portion 221 of the first outer part 22 is provided with a first recess 25 recessed from the first back surface 221B. The first recess 25 is connected to the first opening 23 and the second opening 24. By adopting this configuration, the first recess 25 promotes the formation of the third bonding portion 93, which is part of the bonding layer 90, in the mounting body B50 shown in FIG. 32 . This allows the first outer part 22 to be more firmly restrained to the wiring substrate 80.

[0086] Sixth Embodiment: A semiconductor device A60 according to a sixth embodiment of the present disclosure will be described with reference to Figures 33 and 34. In these figures, elements that are the same as or similar to those in the semiconductor device A10 and semiconductor device A50 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. The cross-sectional position in Figure 34 corresponds to the cross-sectional position in Figure 6 showing the semiconductor device A10.

[0087] In the semiconductor device A60, the configuration of the first outer portion 22 of the first lead 20 and the configuration of the second outer portion 32 of the second lead 30 are different from those of the semiconductor device A50.

[0088] 33 and 34 , the first recess 25 provided in the first mounting portion 221 of the first outer part 22 is connected to the first end face 221C and the second end face 221D of the first mounting portion 221. As shown in Fig. 33 , the second recess 35 provided in the second mounting portion 321 of the second outer part 32 is connected to the fourth end face 321C and the fifth end face 321D of the second mounting portion 321.

[0089] Next, a semiconductor device assembly according to a sixth embodiment of the present disclosure (hereinafter referred to as an assembly B60) will be described with reference to Fig. 35. The assembly B60 includes the semiconductor device A60, a wiring substrate 80, and a bonding layer 90.

[0090] As shown in FIG. 35 , the bonding layer 90 includes a first bonding portion 91, a second bonding portion 92, a third bonding portion 93, a fourth bonding portion 94, and a fifth bonding portion 95. The first bonding portion 91 is housed in the first opening 23. The second bonding portion 92 is housed in the second opening 24. The fourth bonding portion 94 is located on the opposite side of the second bonding portion 92 in the second direction x, with respect to the first end surface 221C of the first mounting portion 221 of the first outer part 22. The fifth bonding portion 95 is located on the opposite side of the first bonding portion 91 in the second direction x, with respect to the second end surface 221D of the first mounting portion 221. The third bonding portion 93 is connected to the first bonding portion 91 and the second bonding portion 92. The third bonding portion 93 is also connected to the fourth bonding portion 94 and the fifth bonding portion 95. As a result, in the mounting body B60, the bonding layer 90 surrounds, when viewed in the third direction y, the portion of the first mounting portion 221 located between the first opening 23 and the second opening 24. In addition, the bonding layer 90 surrounds, when viewed in the third direction y, the portion of the first mounting portion 221 located between the first opening 23 and the second end face 221D and the portion of the first mounting portion 221 located between the second opening 24 and the first end face 221C. Furthermore, in the mounting body B60, a portion of the third bonding portion 93 is housed in the first recess 25.

[0091] Next, the effects of the semiconductor device A60 will be described.

[0092] The semiconductor device A60 includes a first lead 20, a semiconductor element 10, and a sealing resin 60. The first lead 20 has a first outer part 22 protruding from the sealing resin 60. The first outer part 22 has a first mounting surface 221A facing one side in the first direction z. The first outer part 22 is provided with a first opening 23 that penetrates the first outer part 22 from the first mounting surface 221A. Therefore, with this configuration, the semiconductor device A60 can also improve the bonding strength of the semiconductor device A60 to the wiring substrate 80. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A60 achieves the same effects as the semiconductor device A10.

[0093] In the semiconductor device A60, the first recess 25 provided in the first mounting portion 221 of the first outer part 22 is connected to the first end face 221C and the second end face 221D of the first mounting portion 221. By adopting this configuration, in the mounting body B60 shown in FIG. 35 , the volume of the bonding layer 90 surrounding the portion of the first outer part 22 is further increased compared to the mounting body B50. This allows the first outer part 22 to be more firmly bound to the wiring board 80.

[0094] Seventh Embodiment: A semiconductor device A70 according to a seventh embodiment of the present disclosure will be described with reference to Figures 36 to 38. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. The cross-sectional position in Figure 38 corresponds to the cross-sectional position in Figure 8, which shows the semiconductor device A10.

[0095] In the semiconductor device A70, the configuration of the first outer portion 22 of the first lead 20 and the configuration of the second outer portion 32 of the second lead 30 are different from those of the semiconductor device A50.

[0096] 36 to 38 , the first mounting portion 221 of the first outer part 22 is located on the opposite side of the first inner part 21 in the third direction y with respect to the first intermediate part 222 of the first outer part 22. As viewed in the first direction z, the first mounting portion 221 is spaced apart from the sealing resin 60. As a result, the first opening 23 and the second opening 24 provided in the first outer part 22 are spaced apart from the sealing resin 60 as viewed in the first direction z.

[0097] 36 to 38 , the second mounting portion 321 of the second outer part 32 is located on the opposite side of the second inner part 31 in the third direction y, with the second intermediate part 322 of the second outer part 32 as the reference. As viewed in the first direction z, the second mounting portion 321 is spaced apart from the sealing resin 60. As a result, the third opening 33 and the fourth opening 34 provided in the second outer part 32 are spaced apart from the sealing resin 60 as viewed in the first direction z.

[0098] Next, the effects of the semiconductor device A70 will be described.

[0099] The semiconductor device A70 includes a first lead 20, a semiconductor element 10, and a sealing resin 60. The first lead 20 has a first outer part 22 protruding from the sealing resin 60. The first outer part 22 has a first mounting surface 221A facing one side in the first direction z. The first outer part 22 is provided with a first opening 23 that penetrates the first outer part 22 from the first mounting surface 221A. Therefore, with this configuration, the semiconductor device A70 can also improve the bonding strength of the semiconductor device A70 to the wiring substrate 80. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A70 achieves the same effects as the semiconductor device A10.

[0100] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0101] The present disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a first conductive member; a second conductive member conductively bonded to the first conductive member; a semiconductor element conductively connected to each of the first conductive member and the second conductive member; and a bonding layer conductively bonding the first conductive member and the second conductive member, wherein the first conductive member has a first bonding surface facing a first direction and a first engaging portion recessed from the first bonding surface, and the second conductive member has a second bonding surface opposing the first bonding surface and a second engaging portion protruding from the second bonding surface, and the second engaging portion engages with the first engaging portion. Appendix 2. The semiconductor device described in Appendix 1, wherein a portion of the bonding layer is located between the first bonding surface and the second bonding surface. Appendix 3. The semiconductor device described in Appendix 2, wherein a portion of the bonding layer is accommodated in the first engaging portion. Appendix 4. The semiconductor device according to Appendix 3, wherein the bonding layer is in contact with the second engagement portion. Appendix 5. The semiconductor device according to Appendix 4, wherein the dimension of the second engagement portion in the first direction is smaller than the dimension of the first engagement portion in the first direction. Appendix 6. The semiconductor device according to Appendix 5, wherein a portion of the bonding layer is located between the first conductive member and the second engagement portion in the first direction. Appendix 7. The semiconductor device according to Appendix 4, wherein the dimension of the second engagement portion in the first direction is larger than the dimension of the second engagement portion in the first direction. Appendix 8. The semiconductor device according to Appendix 7, wherein the second engagement portion has an end surface facing the same side as the second bonding surface in the first direction, and the end surface is in contact with the first conductive member. Appendix 9. The semiconductor device according to Appendix 4, wherein the first engagement portion is rectangular when viewed in the first direction, and the second engagement portion is circular when viewed in the first direction. Appendix 10. The semiconductor device described in Appendix 4, wherein the first conductive member has a first peripheral surface connected to the first bonding surface and defining the first engagement portion, the second conductive member has a second peripheral surface connected to the second bonding surface and defining the second engagement portion, the first peripheral surface is inclined with respect to the first bonding surface, and the second peripheral surface is inclined with respect to the second bonding surface.Appendix 11. The semiconductor device according to Appendix 10, wherein the second circumferential surface is inclined relative to the second bonding surface in the same direction as the first circumferential surface is inclined relative to the first bonding surface, and the size of a cross section of the second engagement portion perpendicular to the first direction decreases from the second bonding surface to the first conductive member. Appendix 12. The semiconductor device according to Appendix 11, wherein each of the first circumferential surface and the second circumferential surface includes a curved region. Appendix 13. The semiconductor device according to Appendix 4, wherein the first engagement portion includes a first recess and a second recess spaced apart in the direction perpendicular to the first direction, the second engagement portion includes a first protrusion that engages with the first recess and a second protrusion that engages with the second recess, and the second protrusion is spaced apart from the first protrusion. Appendix 14. Supplementary Note 15. The semiconductor device according to any one of Supplementary Note 4, further comprising a third conductive member electrically connected to the semiconductor element, wherein the semiconductor element has a first electrode and a second electrode positioned opposite each other in the first direction, the second conductive member being conductively connected to the first electrode, and the second electrode being conductively connected to the third conductive member. Supplementary Note 16. The semiconductor device according to any one of Supplementary Note 4, further comprising a third conductive member electrically connected to the semiconductor element, wherein the semiconductor element has a first electrode and a second electrode positioned opposite each other in the first direction, the second conductive member being conductively connected to the first electrode, and the second electrode being conductively connected to the third conductive member. 16. The semiconductor device according to claim 15, further comprising a sealing resin covering the second conductive member and the semiconductor element, the sealing resin having a side surface facing a direction perpendicular to the first direction, and a portion of each of the first conductive member and the third conductive member protruding from the side surface. 17. The semiconductor device according to claim 16, wherein the second conductive member has a third bonding surface facing the first electrode and a protrusion protruding from the third bonding surface, and the protrusion overlaps the first electrode as viewed in the first direction z.

[0102] A10 to A70: semiconductor device B10 to B60: mounting body 10: semiconductor element 11, 12: first electrode, second electrode 20: first lead 21: first inner part 211: mounting surface 212: inclined surface 213: through portion 22: first outer part 221: first mounting part 221A: first mounting surface 221B: first back surface 221C to 221E: first end surface to third end surface 222: first intermediate part 23: first opening 23A, 23B: first part, second part 231: inner circumferential surface 24: second opening 25: first recess 30: second lead 31: second inner part 311: third bonding surface 32: second outer part 321: second mounting part 321A: second mounting surface 321B: Second back surface 321C to 321E: Fourth end surface to sixth end surface 322: Second intermediate part 33: Third opening 33A, 33B: Third part, fourth part 34: Fourth opening 35: Second recessed part 40: Conductive member 41, 42: First joint surface, second joint surface 43: Protrusion 51 to 53: First bonding layer to third bonding layer 60: Sealing resin 61: Top surface 62: Bottom surface 63, 64: First side surface, second side surface 71, 72: First protective layer, second protective layer 80: Wiring board 90: Bonding layer 91 to 95: First bonding portion to fifth bonding portion z: First direction x: Second direction y: Third direction

Claims

1. First lead, A semiconductor element that conducts to the first lead, The system comprises a part of the first lead and a sealing resin covering the semiconductor element, The first lead has a first outer portion that protrudes from the sealing resin, The first outer portion has a first mounting surface facing one side in the first direction, A semiconductor device is provided in which the first outer portion is provided with a first opening that penetrates the first outer portion from the first mounting surface.

2. The first protective layer, which is a conductor, further covers at least a portion of the first outer portion, The first outer portion has a first end face that faces one side of a second direction perpendicular to the first direction and is away from the first opening. The semiconductor device according to claim 1, wherein the first protective layer covers the first end face.

3. The first outer portion has a first back surface that faces away from the first mounting surface in the first direction, The semiconductor device according to claim 2, wherein the first protective layer covers the first back surface.

4. The first outer portion defines the first opening and has an inner circumferential surface connected to the first mounting surface and the first back surface. The semiconductor device according to claim 3, wherein the first protective layer covers the inner circumferential surface.

5. The first outer portion is provided with a second opening that penetrates the first outer portion from the first mounting surface. The semiconductor device according to claim 3, wherein the second opening is separated from the first opening in a direction perpendicular to the first direction.

6. The first outer portion includes a first mounting portion including the first mounting surface, the first end surface, and the first back surface, and a first intermediate portion rising in the first direction from the first mounting portion. The semiconductor device according to claim 5, wherein the first protective layer covers at least a portion of the first intermediate portion.

7. The first mounting portion has a second end face that faces away from the first end face in the second direction and is separated from the second opening, The semiconductor device according to claim 6, wherein the first protective layer covers the second end face.

8. The semiconductor device according to claim 7, wherein the second opening is located between the first end face and the first opening in the second direction.

9. The semiconductor device according to claim 8, wherein, viewed in the first direction, the first opening and the second opening are located inward from the periphery of the first mounting portion.

10. The semiconductor device according to claim 9, wherein the size of the cross-section of the first opening perpendicular to the first direction increases from the first mounting surface to the first back surface.

11. The semiconductor device according to claim 8, wherein the first opening is connected to the second end face.

12. The semiconductor device according to claim 11, wherein the second opening is connected to the first end face.

13. The semiconductor device according to claim 7, wherein the first opening includes a first portion that penetrates the first mounting portion and a second portion that is connected to the first portion and penetrates the first intermediate portion.

14. The first mounting portion is provided with a first recess that is recessed from the first back surface, The semiconductor device according to any one of claims 6 to 13, wherein the first recess is connected to the first opening and the second opening.

15. The semiconductor device according to any one of claims 6 to 13, wherein the first back surface faces the sealing resin.

16. The semiconductor device according to claim 15, wherein, when viewed in the first direction, the first opening overlaps the sealing resin.

17. The semiconductor device according to claim 16, wherein a gap is provided between the first back surface and the sealing resin in the first direction.

18. The first lead has a first inner portion that is connected to the first outer portion and covered with the sealing resin, The semiconductor device according to claim 17, wherein the semiconductor element is located on the opposite side from the first mounting surface with respect to the first inner portion in the first direction, and is electrically bonded to the first inner portion.

19. The semiconductor device according to claim 3, A wiring board facing the first mounting surface, The wiring board and the first outer portion are electrically bonded together by a bonding layer, The bonding layer includes a first bonding portion housed in the first opening, a second bonding portion located in the second direction on the opposite side of the first bonding portion with respect to the first end face, and a third bonding portion located in the first direction on the opposite side of the first mounting surface with respect to the first back surface. The third joint is connected to the first joint and the second joint, and is a semiconductor device mounting assembly.

20. The semiconductor device according to claim 5, A wiring board facing the first mounting surface, The wiring board and the first outer portion are electrically bonded together by a bonding layer, The bonding layer includes a first bonding portion housed in the first opening, a second bonding portion housed in the second opening, and a third bonding portion located in the first direction on the opposite side from the first mounting surface with respect to the first back surface. The third joint is connected to the first joint and the second joint, and is a semiconductor device mounting assembly.