Light detection device and solid-state imaging device

JPWO2025084263A1Undetermined Publication Date: 2025-04-24
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Filing Date
2024-10-15
Publication Date
2025-04-24

AI Technical Summary

Technical Problem

There is a demand for improved reliability in light detection devices used as image pickup devices, particularly as pixels are refined.

Method used

A photodetector and solid-state imaging device are designed with a floating diffusion layer whose upper surface is flush with or protrudes from the first surface of a first semiconductor layer, and a first wiring containing polysilicon directly connected to the upper surface of the floating diffusion layer, reducing the electric field between the floating diffusion layer and the first transistor.

Benefits of technology

This configuration enhances the reliability of the imaging device by reducing the electric field and suppressing the increase in FD white points when pixels are refined, leading to improved image quality and device reliability.

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Abstract

A light detection device of one embodiment of the present disclosure is provided with: a first semiconductor layer which includes a first surface and a second surface that face each other and in which a photoelectric conversion unit is formed, for each pixel, by being embedded; a floating diffusion layer which is embedded in the first surface of the first semiconductor layer, the upper surface of which is flush with the first surface or protrudes farther out than the first surface, and in which signal charges generated by the photoelectric conversion unit are accumulated; a first transistor which is provided on the first surface of the first semiconductor layer and which reads signal charges from the floating diffusion layer; and first wiring which contains polysilicon and which is directly connected to the upper surface of the floating diffusion layer.
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