Substrate Processing Equipment

Abstract

An upper assembly disclosed herein includes a top plate, a base member, and at least one actuator. The top plate is disposed above a treatment space in a chamber of a substrate treatment apparatus. The base member is disposed on the top plate. The at least one actuator is configured to lift the top plate and bias the top plate relative to the base member.

Description

Upper assembly and substrate processing apparatus

[0001] Exemplary embodiments of the present disclosure relate to an upper assembly and a substrate processing apparatus.

[0002] A capacitively coupled plasma processing apparatus is used as a type of substrate processing apparatus for substrate processing. The capacitively coupled plasma processing apparatus includes an upper electrode. The upper electrode includes a cooling plate and an electrode plate. The cooling plate is disposed on the electrode plate. The electrode plate is fixed to the cooling plate by screws that are threaded into screw holes in the electrode plate. Patent Document 1 listed below discloses a plasma processing apparatus including such an upper electrode.

[0003] Japanese Patent Application Laid-Open No. 2003-297806

[0004] The present disclosure provides a technique for suppressing the occurrence or expansion of a gap between a top plate and a base member in an upper assembly above a processing space in a chamber of a substrate processing apparatus.

[0005] In one exemplary embodiment, an upper assembly is provided. The upper assembly includes a top plate, a base member, and at least one actuator. The top plate is disposed above a processing space within a chamber of a substrate processing apparatus. The base member is disposed above the top plate. The at least one actuator is configured to lift the top plate and bias the top plate against the base member.

[0006] According to one exemplary embodiment, there is provided a technique for suppressing the occurrence or expansion of a gap between a top plate and a base member in an upper assembly above a processing space in a chamber of a substrate processing apparatus.

[0007] FIG. 1 is a diagram for explaining an example configuration of a plasma processing system. FIG. 1 is a diagram for explaining an example configuration of a capacitively coupled plasma processing apparatus. FIG. 2 is a diagram showing an upper assembly according to an exemplary embodiment. FIG. 3 is a diagram showing an upper assembly according to another exemplary embodiment. FIG. 4 is a diagram showing a layout of a plurality of actuators and a plurality of temperature sensors in an upper assembly according to another exemplary embodiment. FIG. 5 is a diagram showing a layout of a plurality of actuators and a plurality of temperature sensors in an upper assembly according to yet another exemplary embodiment. FIG. 6 is a diagram showing an upper assembly according to yet another exemplary embodiment. FIG. 7 is a diagram showing an upper assembly according to yet another exemplary embodiment. FIG. 8 is a flowchart showing a temperature control method according to an exemplary embodiment. FIG. 9 is a timing chart showing a substrate processing method according to an exemplary embodiment. FIG. 10 is a block diagram of a processing circuit for performing the operations described herein on a computer.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 may be electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] Reference is now made to FIG. 3, which illustrates an upper assembly according to one exemplary embodiment. The upper assembly 50 illustrated in FIG. 3 can be employed in a substrate processing apparatus such as the plasma processing apparatus 1. In the embodiment illustrated in FIG. 3, the showerhead 13 including the upper electrode 14 is electrically insulated from the housing of the plasma processing chamber 10 including a member 55 described below.

[0027] 3, the upper assembly 50 can be disposed above the processing space 10s in the plasma processing apparatus 1. The upper assembly 50 includes a top plate 51, a base member 52, and at least one actuator .

[0028] The top plate 51 is disposed above the processing space 10s. The top plate 51 defines the processing space 10s from above. The top plate 51 may have a generally disc shape. The base member 52 is disposed above the top plate 51. The base member 52 may have a generally disc shape. The base member 52 may include a coolant flow path 52f extending therein. The chiller unit 70 is connected to the coolant flow path 52f. The coolant flow path 52f receives a coolant supplied from the chiller unit 70. The coolant flows through the coolant flow path 52f and is returned to the chiller unit 70. The temperature of the base member 52 is adjusted by the coolant flowing through the coolant flow path 52f. The temperature of the top plate 51 is adjusted by heat transfer between the top plate 51 and the base member 52.

[0029] The upper assembly 50 may further include a heat transfer sheet 53. The heat transfer sheet 53 is disposed between the upper surface of the top plate 51 and the lower surface of the base member 52, and is sandwiched between the top plate 51 and the base member 52. If the upper assembly 50 does not include the heat transfer sheet 53, the upper surface of the top plate 51 and the base member 52 may be in contact with each other.

[0030] In one embodiment, the top plate 51 and the base member 52 may constitute the upper electrode 14 described above in the capacitively coupled plasma processing apparatus 1. The upper electrode 14 may further include a heat transfer sheet 53 in addition to the top plate 51 and the base member 52. In this case, the top plate 51, the base member 52, and the heat transfer sheet 53 are formed from conductive materials. The top plate 51 is formed from a conductive material such as silicon or a metal (e.g., aluminum). The base member 52 is formed from a conductive material such as a metal (e.g., aluminum). The heat transfer sheet 53 may be formed from a conductive material. The heat transfer sheet 53 may be elastic. The heat transfer sheet 53 is formed from, for example, carbon or a carbon-containing material.

[0031] In one embodiment, the upper assembly 50 may further include members 55, 56, 57, and 58. The member 55 is formed from a conductive material such as a metal (e.g., aluminum). The member 55 extends over the top of the sidewall of the chamber 10 and is electrically grounded. The member 55 may have a generally cylindrical shape, and its lower end may define a reduced diameter portion. The reduced diameter portion has an inner diameter that is smaller than the inner diameter of the portion of the member 55 above it.

[0032] The member 58 is disposed on the member 55. The member 58 is formed from a conductive material such as a metal (e.g., aluminum). The member 58 has a generally disk shape and is electrically grounded. The members 55 and 58 define a space 50s.

[0033] The member 56 is formed from an insulating material such as quartz or alumina ceramic. The member 56 may have a generally annular shape. The inner edge of the member 56 is disposed below the peripheral edge of the base member 52 so that the upper surface of the member 56 faces the lower surface of the peripheral edge of the base member 52. The outer edge of the member 56 is supported on the reduced diameter portion of the member 55.

[0034] The member 57 may be formed from an insulating material such as quartz or alumina ceramic, or a conductive material such as metal (e.g., stainless steel). The member 57 may have a generally annular shape. The inner edge of the member 57 is disposed on the peripheral edge of the base member 52 so that the lower surface of the member 57 faces the upper surface of the peripheral edge of the base member 52. The outer edge of the member 57 is disposed on the outer edge of the member 56. The members 56 and 57 sandwich the peripheral edge of the base member 52 between them.

[0035] In one embodiment, the upper assembly 50 may further include a clamp 60. The clamp 60 clamps the peripheral edge of the top plate 51 and the peripheral edge of the base member 52 between its upper and lower portions. The clamp 60 includes a member 61 as its lower portion. The clamp 60 may further include members 56 and 57 as its upper portion. The member 61 may have a generally ring shape. The member 61 may include an inner edge and an outer edge. The inner edge of the member 61 is disposed below the peripheral edge of the top plate 51 so that its upper surface faces the lower surface of the peripheral edge of the top plate 51. The outer edge of the member 61 is disposed below the upper portion of the clamp 60 (e.g., members 56 and 57). The clamp 60 may further include a plurality of screws 62, such as bolts, and a plurality of springs 63. A plurality of screws 62 are threaded into the upper portion of the clamp 60 (e.g., member 57), and their heads and a plurality of springs 63 bias member 61 against the upper portion of the clamp 60 (e.g., members 56 and 57).

[0036] As described above, the upper assembly 50 includes at least one actuator 54. The at least one actuator 54 is configured to lift the top plate 51 and urge the top plate 51 toward the base member 52. That is, the at least one actuator 54 is configured to urge the top plate 51 upward. The at least one actuator 54 can be controlled by the control unit 2.

[0037] 3, the upper assembly 50 includes one actuator 54. The actuator 54 may be connected to the center of the top plate 51 and configured to bias the center of the top plate 51 against the base member 52, as shown in FIG.

[0038] The actuator 54 may include a rod 54r and a drive unit 54d. The rod 54r extends upward from its lower end. The lower end of the rod 54r is engaged with the top plate 51. The lower end of the rod 54r may be engaged with a bush 51b fixed to the top plate 51. In the embodiment of FIG. 3, the lower end of the rod 54r is engaged with the center of the top plate 51. As shown in FIG. 3, the lower end of the rod 54r may be engaged with a bush 51b fixed to the center of the top plate 51. The drive unit 54d is configured to move the rod 54r up and down. The drive unit 54d may be disposed in the base member 52.

[0039] In one embodiment, at least one actuator 54 may be an air cylinder. In this case, the rod 54r is a cylinder rod, and the drive unit 54d is a cylinder head. In this case, an air supplier 54s is connected to the drive unit 54d, i.e., the cylinder head, via an air line. Note that the at least one actuator 54 may be a hydraulic cylinder or any other actuator as long as it can urge the top plate 51 against the base member 52.

[0040] According to the upper assembly 50 described above, the top plate 51 is biased against the base member 52 by at least one actuator 54. This prevents a gap from occurring or widening between the top plate 51 and the base member 52. This maintains close contact between the top plate 51 and the base member 52, either directly or indirectly via the heat transfer sheet 53. Furthermore, close thermal contact between the top plate 51 and the base member 52, either directly or indirectly via the heat transfer sheet 53, is maintained.

[0041] In one embodiment, the plasma processing apparatus 1 may further include at least one temperature sensor 74. The at least one temperature sensor 74 is configured to measure the temperature of the top plate 51. The at least one temperature sensor 74 may be configured to measure the temperature of the top plate 51 in a portion of the top plate 51 that is actuated by the at least one actuator 54, i.e., in a portion near the portion of the top plate 51 to which the at least one actuator 54 is connected. In the embodiment of FIG. 3 , the one temperature sensor 74 is configured to measure the temperature of the top plate 51 in a portion near the center of the top plate 51.

[0042] As described above, in the embodiment of FIG. 3 , the showerhead 13 including the upper electrode 14 is electrically insulated from the housing of the plasma processing chamber 10 including the member 55. Therefore, in the embodiment of FIG. 3 , the temperature sensor 74, which is a non-contact thermometer such as a radiation thermometer, is disposed on the grounded member 58. In another embodiment, the temperature of the top plate 51 may be measured using the temperature sensor 74, which is a contact thermometer such as a fluorescent lifetime thermometer. When the showerhead 13 including the upper electrode 14 is electrically connected to the housing of the plasma processing chamber 10 including the member 55, a temperature sensor 74 that utilizes a change in electrical resistance, such as a resistance temperature detector, may be used.

[0043] The control unit 2 may be configured to control the at least one actuator 54 in response to the temperature of the top plate 51 measured by the at least one temperature sensor 74. The control unit 2 may control the at least one actuator 54 to reduce the difference between the measured temperature of the top plate 51 and a specified temperature for the top plate 51.

[0044] Reference is now made to Figures 4 and 5. Figure 4 is a diagram illustrating an upper assembly according to another exemplary embodiment. Figure 5 is a diagram illustrating a layout of a plurality of actuators and a plurality of temperature sensors in the upper assembly according to another exemplary embodiment. The upper assembly 50B shown in Figures 4 and 5 will now be described in terms of its differences from the upper assembly 50 shown in Figure 3.

[0045] Like the upper assembly 50, the upper assembly 50B can be employed in a substrate processing apparatus such as the plasma processing apparatus 1. The upper assembly 50B is also disposed above the processing space 10s in the plasma processing apparatus 1.

[0046] The upper assembly 50B includes a plurality of actuators 54. Each of the plurality of actuators 54 has a configuration similar to that of the actuator 54 of the upper assembly 50. The plurality of actuators 54 is configured to urge a plurality of portions within the surface of the top plate 51 against the base member 52. The plurality of actuators 54 can be individually controlled by the control unit 2.

[0047] The multiple actuators 54 may be arranged on at least one circle around the central axis AX of the top plate 51. In other words, the multiple actuators 54 may be connected to multiple parts within the top plate 51 on at least one circle around the central axis AX, and may be configured to urge the multiple parts against the base member 52.

[0048] In the embodiment of FIGS. 4 and 5 , the multiple actuators 54 are arranged on a circle Ca around the central axis AX. The multiple actuators 54 may be arranged at equal intervals. Also, in the embodiment of FIGS. 4 and 5 , the multiple actuators 54 are connected to multiple portions of the top plate 51 on a circle around the central axis AX having the same radius as the circle Ca, and are configured to urge the multiple portions against the base member 52. The multiple portions of the top plate 51 may be arranged at equal intervals. Also, the multiple portions of the top plate 51 on a circle around the central axis AX having the same radius as the circle Ca may be located closer to the periphery of the top plate 51 than to the center of the top plate 51.

[0049] Furthermore, one of the multiple actuators 54 may be connected to the center of the top plate 51, similar to the actuator 54 of the upper assembly 50, and may be configured to urge the center of the top plate 51 against the base member 52.

[0050] Each of the multiple actuators 54 of the upper assembly 50B may include a rod 54r and a drive unit 54d, similar to the actuators 54 of the upper assembly 50. The lower end of the rod 54r of each of the multiple actuators 54 is engaged with the top plate 51. The lower end of the rod 54r of each of the multiple actuators 54 may be engaged with a bushing 51b fixed to the top plate 51.

[0051] Each of the multiple actuators 54 of the upper assembly 50B may be an air cylinder. In this case, the rod 54r is a cylinder rod, and the drive unit 54d is a cylinder head. In this case, multiple air suppliers 54s may be connected to the cylinder heads of the multiple actuators 54 via corresponding air lines. Note that each of the multiple actuators 54 of the upper assembly 50B may be a hydraulic cylinder or any other actuator as long as it can urge the top plate 51 against the base member 52.

[0052] In one embodiment, the plasma processing apparatus 1 including the upper assembly 50B may include at least one temperature sensor 74 configured to measure the temperature distribution of the top plate 51. This temperature distribution is the temperature distribution in the in-plane direction of the top plate 51. In the embodiment of FIGS. 4 and 5, the plasma processing apparatus 1 includes a plurality of temperature sensors 74 configured to measure the temperature distribution of the top plate 51.

[0053] The multiple temperature sensors 74 may be configured to measure the temperature of the top plate 51 in multiple portions of the top plate 51 that are actuated by the multiple actuators 54, i.e., in portions near each of the multiple portions of the top plate 51 to which the multiple actuators 54 are connected.

[0054] The control unit 2 may be configured to control the plurality of actuators 54 in accordance with the measured temperature distribution of the top plate 51. The control unit 2 may control the plurality of actuators 54 in accordance with the measured temperature distribution of the top plate 51 and a specified temperature distribution for the top plate 51 so as to bring the temperature distribution of the top plate 51 closer to the specified temperature distribution. The specified temperature distribution may be a uniform temperature distribution.

[0055] Reference will now be made to FIG. 6 , which is a diagram illustrating a layout of a plurality of actuators and a plurality of temperature sensors in an upper assembly according to yet another exemplary embodiment. As illustrated in FIG. 6 , the plurality of actuators 54 of the upper assembly 50B may be arranged on two circles Ca and Cb around the central axis AX. The two circles Ca and Cb are concentric circles. Note that the plurality of actuators 54 of the upper assembly 50B may also be arranged on three or more concentric circles around the central axis AX. The plurality of actuators 54 on each concentric circle may be arranged at equal intervals.

[0056] Reference is now made to Figure 7, which illustrates an upper assembly according to yet another exemplary embodiment. Upper assemblies in the present disclosure, such as upper assemblies 50 and 50B, may not include the clamp 60. For example, as shown in Figure 7, upper assembly 50B may not include the clamp 60. However, upper assembly 50B may include the clamp 60, similar to upper assembly 50 (see Figure 4).

[0057] Reference will now be made to Figures 8 and 9, each of which illustrates an upper assembly according to yet another exemplary embodiment. An upper assembly 50C shown in Figure 8 and an upper assembly 50D shown in Figure 9 will now be described in terms of their differences from the upper assembly 50B shown in Figure 7.

[0058] Like the upper assembly 50B, each of the upper assemblies 50C and 50D can be employed in a substrate processing apparatus such as the plasma processing apparatus 1. Each of the upper assemblies 50C and 50D is also disposed above the processing space 10s in the plasma processing apparatus 1.

[0059] The upper assemblies 50C and 50D further include a heater 80 and a seal 82. The heater 80 is configured to heat the top plate 51 via the base member 52 and can be controlled by the control unit 2. In the upper assembly 50C, the heater 80 is disposed on the base member 52. In the upper assembly 50D, the heater 80 is disposed within the base member 52. In the upper assembly 50D, the heater 80 may be disposed in a region above the coolant flow path 52f. Note that the upper assembly 50 and the upper assembly 50B shown in FIG. 4 may also include the heater 80, like the upper assembly 50C or the upper assembly 50D.

[0060] The seal 82 is configured to seal the area between the top plate 51 and the base member 52, where the heat transfer sheet 53 is arranged. The seal 82 is sandwiched between the top plate 51 and the base member 52 so as to surround the heat transfer sheet 53. The seal 82 is elastic and configured to maintain contact with each of the top plate 51 and the base member 52 even if the distance between the top plate 51 and the base member 52 changes. Note that the upper assembly 50 and the upper assembly 50B shown in FIG. 4 may also include the seal 82, like the upper assembly 50C or the upper assembly 50D.

[0061] A temperature control method according to one exemplary embodiment will be described below with reference to FIG. 10 . FIG. 10 is a flow chart showing a temperature control method according to one exemplary embodiment. The temperature control method shown in FIG. 10 (hereinafter referred to as "method MTA") is performed in a plasma processing apparatus 1 having an upper assembly 50, 50B, 50C, or 50D to control the temperature of a top plate 51. Method MTA can be performed by control of each part of the plasma processing apparatus 1 by a control unit 2. Method MTA can also be performed during execution of a process in chamber 10 (e.g., plasma processing of a substrate in chamber 10, such as plasma etching).

[0062] The method MTA starts with step STAa, in which one or more actuators 54 are initialized to set the contact pressure of the top plate 51 against the heat transfer sheet 53 to an initial state. In the subsequent step STAb, the temperature of the top plate 51 is measured using one or more temperature sensors 74.

[0063] In the subsequent step STAc, it is determined whether the measured temperature of the top plate 51 is normal with respect to the target temperature of the top plate 51. If the measured temperature of the top plate 51 is not normal, it is determined in the subsequent step STAd whether the measured temperature of the top plate 51 is higher than the target temperature. If the measured temperature of the top plate 51 is higher than the target temperature, in the subsequent step STAe, the control unit 2 controls one or more actuators 54 to increase the contact pressure of the top plate 51 against the heat transfer sheet 53. On the other hand, if the measured temperature of the top plate 51 is lower than the target temperature, in the subsequent step STAf, the control unit 2 controls one or more actuators 54 to decrease the contact pressure of the top plate 51 against the heat transfer sheet 53. After each of step STAe and step STAf, the processing returns to step STAb.

[0064] Furthermore, if it is determined in step STAc that the measured temperature of the top plate 51 is normal, it is determined in the subsequent step STAg whether or not the stop condition is satisfied. The stop condition is a condition for stopping the process in the chamber 10 described above, and is predetermined. If the stop condition is not satisfied, the processing returns to step STAb. On the other hand, if the stop condition is satisfied, the method MTA ends. As described above, according to the plasma processing apparatus 1, the temperature of the top plate 51 is controlled by adjusting the contact pressure of the top plate 51 against the heat transfer sheet 53.

[0065] A substrate processing method according to one exemplary embodiment will be described below with reference to FIG. 11 . FIG. 11 is a timing chart illustrating a substrate processing method according to one exemplary embodiment. FIG. 11 illustrates the change over time in temperature of the top plate 51 and the change over time in contact pressure of the top plate 51 against the heat transfer sheet 53 during the substrate processing method (hereinafter referred to as "method MTB"). Method MTB is performed in a plasma processing apparatus 1 having an upper assembly 50, 50B, 50C, or 50D. Method MTB can be performed by control of each component of the plasma processing apparatus 1 by a control unit 2.

[0066] Method MTB includes steps STBa and STBb. In step STBa, the controller 2 controls each component of the plasma processing apparatus 1 to perform a first process in the chamber 10. In step STBa (i.e., during the execution of the first process), the controller 2 controls one or more actuators 54 to adjust the contact pressure of the top plate 51 against the heat transfer sheet 53 in order to set the temperature of the top plate 51 to a first target temperature. The first process may be plasma processing (e.g., plasma etching) on ​​a substrate in the chamber 10.

[0067] Process STBb is performed after process STBa. In process STBb, the control unit 2 controls each component of the plasma processing apparatus 1 to perform a second process in the chamber 10. In process STBb (i.e., during the execution of the second process), the control unit 2 controls one or more actuators 54 to adjust the contact pressure of the top plate 51 against the heat transfer sheet 53 in order to set the temperature of the top plate 51 to a second target temperature. The second target temperature is different from the first target temperature.

[0068] The second process may be plasma cleaning (i.e., dry cleaning) of the chamber 10. In this case, the second target temperature is higher than the first target temperature in order to rapidly volatilize and exhaust deposits accumulated on the surfaces within the chamber 10 during cleaning. In this case, the contact pressure during the execution of the second process is lower than the contact pressure during the execution of the first process.

[0069] According to the plasma processing apparatus 1, the temperature of the top plate 51 can be increased by adjusting the contact pressure, and therefore the temperature of the top plate 51 can be increased more quickly than when using only the heater 80. Note that in the method MTB, the adjustment of the contact pressure may be used in combination with heating of the top plate 51 by the heater 80.

[0070] The following describes an example of a processing circuit that can be used as one or more processing circuits in the plasma processing apparatus 1, such as the control unit 2. FIG. 12 is a block diagram of a processing circuit that performs the operations described herein on a computer. FIG. 12 illustrates a processing circuit 130 that can be used to control a control process on any computer. The descriptions or blocks in the flowcharts represent modules, segments, or portions of code that include one or more executable instructions for implementing specific logical functions or steps of the process. As will be understood by those skilled in the art, other examples having functions that can be performed in a different order than that shown or described, such as substantially simultaneously or in reverse order, depending on the functionality involved, are included within the scope of the exemplary embodiments of the present disclosure. The various elements, features, and processes described herein may be used independently of each other or combined in various ways. All conceivable combinations and subcombinations may be included within the scope of the present disclosure.

[0071] In Figure 12, processing circuitry 130 includes a CPU 1200 that performs one or more of the control processes described above and / or below. Process data and instructions may be stored in memory 1202. These process data and instructions may be stored on a storage medium disk 1204, such as a hard disk drive (HDD) or a portable storage medium, or may be stored remotely. Furthermore, the claimed disclosure is not limited by the form of computer-readable medium on which instructions for processes according to the present invention are stored. For example, these instructions may be stored on a CD, DVD, flash memory, RAM, ROM, PROM, EPROM, EEPROM, hard disk, or any other information processing device, such as a server and / or computer, with which processing circuitry 130 communicates.

[0072] Furthermore, the claimed disclosure may be provided as a utility application, a background daemon, a component of an operating system, or a combination thereof, and may execute in conjunction with CPU 1200 and an operating system known to those skilled in the art, such as Microsoft Windows®, UNIX®, Solaris®, LINUX®, Apple MAC-OS, etc.

[0073] The hardware elements making up the processing circuit 130 can be realized by various circuit elements. Furthermore, each function of the above-described embodiments can be implemented by a circuit including one or more processing circuits. As shown in FIG. 12, the processing circuit includes a specifically programmed processing unit, such as a processing unit (CPU) 1200. The processing circuit also includes devices such as application specific integrated circuits (ASICs) or conventional circuit components configured to perform the described functions.

[0074] 12, processing circuitry 130 includes a CPU 1200 that performs the processes described above. Processing circuitry 130 may be a general-purpose computer or a specialized machine. In one embodiment, processing circuitry 130 functions as a specialized machine when processing device 1200 is programmed to control plasma generation unit 12 and gas supply unit 20 and / or to control at least one actuator 54.

[0075] Alternatively or additionally, CPU 1200 may be implemented on an FPGA, ASIC, PLD, or using discrete logic circuitry, as will be appreciated by those skilled in the art. Furthermore, CPU 1200 may be implemented as multiple processing units cooperating to perform in parallel the instructions of the processes of the present invention described above.

[0076] The processing circuitry 130 of FIG. 12 also includes a network controller 1206, such as an Intel Ethernet PRO network interface card from Intel Corporation of America, for interfacing with a network 1228. As can be appreciated, the network 1228 may be a public network such as the Internet, a private network such as a LAN or WAN, or any combination thereof, and may also include sub-networks such as PSTN or ISDN. The network 1228 may also be wired, such as an Ethernet network, or wireless, such as a cellular network including EDGE, 3G, and 4G wireless cellular systems. The wireless network may also be Wi-Fi, Bluetooth, or any other known form of wireless communication.

[0077] The processing circuitry 130 further includes a display device controller 1208, such as a graphics card or graphics adapter, for interfacing with a display device 1210, such as a monitor. A general-purpose I / O interface 1212 interfaces with a keyboard and / or mouse 1214 and a touch panel 1216, which may be integral with or separate from the display device 1210. The general-purpose I / O interface also connects to various peripheral devices 1218, such as printers and scanners.

[0078] The storage controller 1224 is connected to the storage media disk 1204 via a communication bus 1226, such as ISA, EISA, VESA, PCI, etc., and all components of the processing circuit 130 are connected to each other. The display device 1210, keyboard and / or mouse 1214, and the general features and functions of the display device controller 1208, storage controller 1224, network controller 1206, audio controller 1220, and general purpose I / O interface 1212 are not described herein for the sake of brevity, as they are well known.

[0079] The exemplary circuit elements described in this disclosure may be substituted with other elements and may have different structures than the examples described herein. Furthermore, circuits configured to implement the features described herein may be implemented in multiple circuit units (e.g., chips), or these features may be combined into the circuitry of a single chipset.

[0080] The functions and features described herein may also be performed by various distributed components on a system. For example, one or more processing devices may perform the functions of these systems, where the processing devices are distributed across multiple components communicating within a network. Distributed components may include various human interface and communication devices (e.g., display monitors, smartphones, tablets, personal digital assistants (PDAs)), as well as one or more client and server machines that can share processing. The network may be a private network, such as a LAN or WAN, or a public network, such as the Internet. Input to the system may be received directly by a user or remotely in real time or as a batch process. Furthermore, portions of the embodiments may be implemented on modules or hardware other than those described above. Accordingly, other embodiments are within the scope of the claims.

[0081] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0082] For example, upper assemblies in the present disclosure, such as upper assemblies 50, 50B, 50C, and 50D, may be employed in substrate processing apparatuses other than plasma processing apparatuses.

[0083] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E20] below.

[0084] [E1] An upper assembly comprising: a top plate disposed above a processing space in a chamber of a substrate processing apparatus; a base member disposed on the top plate; and at least one actuator configured to lift the top plate and bias the top plate against the base member.

[0085] [E2] The upper assembly of E1, wherein the at least one actuator includes an actuator connected to a center of the top plate and configured to bias the center of the top plate against the base member.

[0086] [E3] The upper assembly according to E1 or E2, wherein the at least one actuator includes a plurality of actuators, and the plurality of actuators are configured to bias a plurality of portions within a plane of the top plate against the base member.

[0087] [E4] The upper assembly according to E3, wherein the plurality of portions are arranged on at least one circle around a central axis of the top plate.

[0088] [E5] An upper assembly described in any one of E1 to E4, wherein the at least one actuator includes a rod and a drive unit configured to move the rod up and down, and the rod includes a lower end engaged with the top plate and extends upward.

[0089] [E6] The upper assembly according to E5, wherein the drive portion is disposed within the base member.

[0090] [E7] The upper assembly of E5 or E6, wherein the at least one actuator includes an air cylinder.

[0091] [E8] The upper assembly according to any one of E1 to E7, further comprising a clamp that clamps the peripheral edge of the top plate and the peripheral edge of the base member.

[0092] [E9] The upper assembly according to any one of E1 to E8, further comprising a heat transfer sheet disposed between the top plate and the base member.

[0093] [E10] The upper assembly according to any one of E1 to E9, wherein the base member has a coolant flow path.

[0094] [E11] The upper assembly according to any one of E1 to E10, wherein the top plate and the base member constitute an upper electrode of a capacitively coupled plasma processing apparatus that is the substrate processing apparatus.

[0095] [E12] A substrate processing apparatus comprising: a chamber; and an upper assembly disposed above a processing space in the chamber, wherein the upper assembly includes: a top plate disposed above the processing space; a base member disposed on the top plate; and at least one actuator configured to lift the top plate and bias the top plate against the base member.

[0096] [E13] The substrate processing apparatus according to E12, further comprising: at least one temperature sensor configured to measure a temperature of the top plate; and a control unit, wherein the control unit is configured to control the at least one actuator according to the temperature of the top plate measured by the at least one temperature sensor.

[0097] [E14] The substrate processing apparatus according to E12, wherein the at least one actuator includes a plurality of actuators, and the plurality of actuators are configured to urge a plurality of portions within a surface of the top plate against the base member.

[0098] [E15] The substrate processing apparatus according to E14, further comprising: at least one temperature sensor configured to measure a temperature distribution of the top plate; and a control unit, wherein the control unit is configured to control the plurality of actuators in accordance with the temperature of the top plate measured by the at least one temperature sensor.

[0099] [E16] The substrate processing apparatus described in E15, wherein the control unit is configured to control the plurality of actuators in accordance with the temperature distribution of the top plate measured by the at least one temperature sensor and a specified temperature distribution of the top plate so as to bring the temperature distribution of the top plate closer to the specified temperature distribution.

[0100] [E17] The substrate processing apparatus described in E12, further comprising: at least one temperature sensor configured to measure the temperature of the top plate; and a control unit, wherein the upper assembly further includes a heat transfer sheet disposed between the top plate and the base member, and the control unit is configured to: control the at least one actuator to increase the contact pressure of the top plate against the heat transfer sheet when the temperature of the top plate measured by the at least one temperature sensor is higher than a target temperature; and control the at least one actuator to decrease the contact pressure of the top plate against the heat transfer sheet when the temperature of the top plate measured by the at least one temperature sensor is lower than the target temperature.

[0101] [E18] The substrate processing apparatus described in E12, further comprising: at least one temperature sensor configured to measure the temperature of the top plate; and a control unit, wherein the upper assembly further includes a heat transfer sheet disposed between the top plate and the base member, and the control unit is configured to: control the at least one actuator to adjust the contact pressure of the top plate against the heat transfer sheet in order to set the temperature of the top plate to a first target temperature during a period in which a first process is performed in the chamber; and control the at least one actuator to adjust the contact pressure of the top plate against the heat transfer sheet in order to set the temperature of the top plate to a second target temperature different from the first target temperature during a period in which a second process is performed in the chamber.

[0102] [E19] The substrate processing apparatus according to E18, wherein the first process is plasma processing of a substrate in the chamber, the second process is plasma cleaning of the chamber, the second target temperature is higher than the first target temperature, and the contact pressure during the execution of the second process is lower than the contact pressure during the execution of the first process.

[0103] [E20] The substrate processing apparatus according to any one of E12 to E19, which is a capacitively coupled plasma processing apparatus and further comprises a substrate support part disposed in the chamber, and the top plate and the base member constitute an upper electrode of the capacitively coupled plasma processing apparatus.

[0104] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0105] 1... plasma processing apparatus, 2... control unit, 10... chamber, 11... substrate support unit, 50... upper assembly, 51... top plate, 52... base member, 54... actuator.

Claims

1. a chamber; an upper assembly disposed above a processing volume within the chamber; a top plate disposed above the processing space; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate against the base member; the upper assembly including: at least one temperature sensor configured to measure the temperature of the top plate; A control unit; Equipped with The control unit is configured to control the at least one actuator in response to the temperature of the top plate measured by the at least one temperature sensor. Substrate processing equipment.

2. A chamber; an upper assembly disposed above a processing volume within the chamber; a top plate disposed above the processing space; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate against the base member; the upper assembly including: at least one temperature sensor configured to measure a temperature distribution of the top plate; A control unit; Equipped with the at least one actuator includes a plurality of actuators; the plurality of actuators are configured to bias a plurality of portions within a surface of the top plate against the base member; The control unit is configured to control the plurality of actuators in accordance with the temperature distribution of the top plate measured by the at least one temperature sensor. Substrate processing equipment.

3. 3. The substrate processing apparatus of claim 2, wherein the control unit is configured to control the plurality of actuators in accordance with the temperature distribution of the top plate measured by the at least one temperature sensor and a specified temperature distribution of the top plate so as to bring the temperature distribution of the top plate closer to the specified temperature distribution.

4. A substrate processing apparatus as described in Claim 2, wherein the multiple parts are arranged on at least one circle around the central axis of the top plate.

5. A chamber; an upper assembly disposed above a processing volume within the chamber; a top plate disposed above the processing space; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate against the base member; the upper assembly including: at least one temperature sensor configured to measure the temperature of the top plate; A control unit; Equipped with the upper assembly further includes a heat transfer sheet disposed between the top plate and the base member; The control unit When the temperature of the top plate measured by the at least one temperature sensor is higher than a target temperature, the at least one actuator is controlled to increase a contact pressure of the top plate against the heat transfer sheet; When the temperature of the top plate measured by the at least one temperature sensor is lower than the target temperature, the at least one actuator is controlled to reduce the contact pressure of the top plate against the heat transfer sheet. It is configured as follows: Substrate processing equipment.

6. A chamber; an upper assembly disposed above a processing volume within the chamber; a top plate disposed above the processing space; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate against the base member; the upper assembly including: at least one temperature sensor configured to measure the temperature of the top plate; A control unit; Equipped with the upper assembly further includes a heat transfer sheet disposed between the top plate and the base member; The control unit controlling the at least one actuator to adjust a contact pressure of the top plate against the heat transfer sheet to set the temperature of the top plate to a first target temperature during an execution period of a first process in the chamber; and controlling the at least one actuator to adjust the contact pressure of the top plate against the heat transfer sheet to set the temperature of the top plate to a second target temperature different from the first target temperature during the execution of a second process in the chamber. It is configured as follows: Substrate processing equipment.

7. the first process is a plasma treatment of a substrate in the chamber; the second process is plasma cleaning of the chamber; the second target temperature is higher than the first target temperature; the contact pressure during the execution of the second process is lower than the contact pressure during the execution of the first process; The substrate processing apparatus according to claim 6 .

8. A substrate processing apparatus as described in any one of claims 1 to 7, wherein the at least one actuator includes an actuator connected to the center of the top plate and configured to urge the center of the top plate against the base member.

9. The at least one actuator includes a plurality of actuators, The plurality of actuators are configured to bias a plurality of portions within the surface of the top plate against the base member.

8. The substrate processing apparatus according to claim 1, 5, 6, or 7.

10. A substrate processing apparatus as described in Claim 9, wherein the multiple parts are arranged on at least one circle around the central axis of the top plate.

11. The at least one actuator includes a rod and a drive configured to move the rod up and down; 8. The substrate processing apparatus according to claim 1, wherein the rod includes a lower end that is engaged with the top plate and extends upward.

12. A substrate processing apparatus as described in Claim 11, wherein the drive unit is arranged within the base member.

13. A substrate processing apparatus as described in claim 11, wherein the at least one actuator includes an air cylinder.

14. A substrate processing apparatus as described in any one of claims 1 to 7, wherein the upper assembly further includes a clamp that clamps the peripheral edge of the top plate and the peripheral edge of the base member.

15. A substrate processing apparatus as described in any one of claims 1 to 4, wherein the upper assembly further includes a heat transfer sheet arranged between the top plate and the base member.

16. A substrate processing apparatus as described in any one of claims 1 to 7, wherein the base member has a refrigerant flow path.

17. The substrate processing apparatus is a capacitively coupled plasma processing apparatus, and further includes a substrate support disposed in the chamber; the top plate and the base member constitute an upper electrode of the capacitively coupled plasma processing apparatus. The substrate processing apparatus according to any one of claims 1 to 7.