Plasma processing device

Abstract

This plasma processing device comprises: a substrate support part for supporting a substrate to be processed; an inner ring supported by the substrate support part and provided on the lower side of the substrate; and an outer ring provided outside of the substrate and the inner ring. A substrate support surface, which supports the substrate, of the substrate support part is located higher than the upper surface of the inner ring. The inner peripheral surface of the outer ring is provided on the outside of the outermost periphery of the substrate. A labyrinth structure is provided between the outer peripheral surface of the inner ring and the inner peripheral surface of the outer ring.

Description

Plasma processing equipment

[0001] The present disclosure relates to a plasma processing apparatus.

[0002] For example, Patent Document 1 discloses a substrate processing apparatus having an inner focus ring provided near a substrate placed on a stage inside a processing chamber main body, and a central focus ring provided outside the inner focus ring and movable up and down by a movement mechanism.

[0003] Japanese Patent Application Laid-Open No. 2018-160666

[0004] The present disclosure provides a technique for suppressing the intrusion of particles between the inner ring and the outer ring.

[0005] According to one aspect of the present disclosure, there is provided a plasma processing apparatus comprising: a substrate support part for supporting a substrate to be processed; an inner ring supported by the substrate support part and disposed below the substrate; and an outer ring disposed outside the substrate and the inner ring, wherein a substrate support surface of the substrate support part for supporting the substrate is higher than an upper surface of the inner ring, an inner surface of the outer ring is disposed outside the outermost periphery of the substrate, and a labyrinth structure is formed between the outer surface of the inner ring and the inner surface of the outer ring.

[0006] The present disclosure provides a technique for suppressing the intrusion of particles between the inner ring and the outer ring.

[0007] FIG. 1 is a diagram illustrating the configuration of a plasma processing system including a plasma processing apparatus according to this embodiment. FIG. 2 is a diagram illustrating an edge ring in a plasma processing apparatus according to a first embodiment. FIG. 3 is a diagram illustrating an edge ring in a plasma processing apparatus according to a second embodiment. FIG. 4 is a diagram illustrating an edge ring in a plasma processing apparatus according to a third embodiment. FIG. 5 is a diagram illustrating an edge ring in a plasma processing apparatus according to a fourth embodiment. FIG. 6 is a diagram illustrating a plasma processing apparatus according to a fifth embodiment. FIG. 7 is a diagram illustrating a plasma processing apparatus according to a sixth embodiment.

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In this specification and the drawings, substantially identical components are designated by the same reference numerals, and redundant description will be omitted. To facilitate understanding, the scale of each part in the drawings may differ from the actual scale. Directions such as parallel, right-angled, orthogonal, horizontal, vertical, up / down, left / right, and the like are permitted to a degree that does not impair the effects of the embodiments. The shape of corners is not limited to right angles and may be rounded. Parallel, right-angled, orthogonal, horizontal, and vertical may include approximately parallel, approximately right-angled, approximately orthogonal, approximately horizontal, and approximately vertical.

[0009] <Plasma Processing System> An example of the configuration of a plasma processing system will be described below.

[0010] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The sidewall 10a is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the plasma processing chamber 10 housing.

[0011] The substrate support part 11 supports the substrate (wafer) W, the inner ring 113, and the outer ring 114. The substrate support part 11 includes a main body part 120 and a peripheral part 130. The main body part 120 has a central region (substrate support surface) 120S for supporting the substrate W. The main body part 120 supports the substrate W and the inner ring 113. The peripheral part 130 also has an annular region (ring support surface) 130S for supporting the outer ring 114. The peripheral part 130 supports the outer ring 114. The peripheral part 130 is provided outside the main body part 120 and is movable in the vertical direction relative to the main body part 120. The annular region 130S of the peripheral part 130 surrounds the central region 120S of the main body part 120 in a plan view. The substrate W is disposed on the central region 120S of the main body 120, and the outer ring 114 is disposed on the annular region 130S of the peripheral portion 130 so as to surround the substrate W on the central region 120S of the main body 120. In one embodiment, the main body 120 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has a substrate support surface 120S. The inner ring 113 and the outer ring 114 are, for example, edge rings. Although not shown, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck, the inner ring 113, the outer ring 114, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 120S.

[0012] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes a conductive member. The conductive member of the showerhead 13 functions as an upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0013] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0014] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive member of the substrate support 11 and / or the conductive member of the showerhead 13. This causes plasma to be formed from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the conductive member of the substrate support 11, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0015] In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is coupled to the conductive members of the substrate support 11 and / or the conductive members of the showerhead 13 via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive members of the substrate support 11 and / or the conductive members of the showerhead 13. The second RF generator 31b is coupled to the conductive members of the substrate support 11 via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies, and the generated bias RF signals or signals may be supplied to the conductive members of the substrate support 11. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0016] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck. In one embodiment, the second DC generator 32b is connected to a conductive member of the showerhead 13 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the showerhead 13. In various embodiments, at least one of the first and second DC signals may be pulsed. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0017] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0018] The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described in this disclosure. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on programs stored in the storage unit 2a2. The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0019] First Embodiment A plasma processing apparatus according to the first embodiment will be described. The plasma processing apparatus according to the first embodiment includes a substrate support unit that supports a substrate to be processed, an inner ring that is supported by the substrate support unit and disposed below the substrate, and an outer ring that is disposed outside the substrate and the inner ring. In the plasma processing apparatus according to the first embodiment, the substrate support surface that supports the substrate on the substrate support unit is higher than the upper surface of the inner ring. Furthermore, in the plasma processing apparatus according to the first embodiment, the inner peripheral surface of the outer ring is disposed outside the outermost periphery of the substrate. The plasma processing apparatus according to the first embodiment has a labyrinth structure between the outer peripheral surface of the inner ring and the inner peripheral surface of the outer ring.

[0020] The inner ring and the outer ring in the plasma processing apparatus according to the first embodiment will be described in detail with reference to Fig. 2. Fig. 2 is a diagram illustrating the inner ring 113 and the outer ring 114 in the plasma processing apparatus 1, which is an example of the plasma processing apparatus according to the first embodiment. Fig. 2 is a cross-sectional view showing an outline of the portion indicated by arrow A in Fig. 1.

[0021] The plasma processing apparatus 1 includes an inner ring 113 provided below a substrate W to be plasma processed. A substrate support surface 120S that supports the substrate W in the main body 120 is provided higher than an upper surface 113T of the inner ring 113. The plasma processing apparatus 1 also includes an outer ring 114 provided outside the substrate W and the inner ring 113. An inner peripheral surface 114S of the outer ring 114 is provided outside the outermost periphery WS of the substrate W.

[0022] The main body 120 of the plasma processing apparatus 1 includes a dielectric layer 120a and a conductive layer 120b.

[0023] The dielectric layer 120a is, for example, a ceramic layer made of ceramics. The dielectric layer 120a constitutes, for example, an electrostatic chuck that attracts the substrate W. The dielectric layer 120a includes electrodes for the electrostatic chuck. The electrostatic chuck constituted by the dielectric layer 120a may attract the inner ring 113.

[0024] The conductive layer 120b is made of a metal such as aluminum, functions as a lower electrode, and supports the dielectric layer 120a.

[0025] The peripheral portion 130 of the plasma processing apparatus 1 includes a dielectric layer 130a and a conductive layer 130b.

[0026] The dielectric layer 130a is, for example, a ceramic layer made of ceramics. The dielectric layer 130a constitutes, for example, an electrostatic chuck. The dielectric layer 130a includes an electrode for the electrostatic chuck.

[0027] The conductive layer 130b is made of a metal such as aluminum, and supports the dielectric layer 130a.

[0028] The peripheral part 130 is movable up and down relative to the main body part 120. Because the peripheral part 130 is movable up and down relative to the main body part 120, for example, even if the outer ring 114 supported by the peripheral part 130 becomes thinner due to plasma, the outer ring can be moved up by the amount of the thinner ring. By moving the outer ring up, the influence of changes in plasma due to dimensional changes in the outer ring 114 can be suppressed. By suppressing the influence of changes in plasma due to dimensional changes in the outer ring 114, for example, variations in plasma processing in the plasma processing apparatus 1 can be suppressed.

[0029] When moving the so-called edge ring up and down, if a gap is provided between the main body and the edge ring to move the edge ring, particles may enter through the gap and damage the substrate and the underside of the edge ring.

[0030] Therefore, the inventors discovered that the intrusion of particles can be suppressed by dividing the edge ring into an inner ring and an outer ring and providing a labyrinth structure between the outer peripheral surface of the inner ring and the inner peripheral surface of the outer ring.

[0031] The inner ring 113 has a protrusion 113a that protrudes outward from its outer peripheral edge. The outer ring 114 has a protrusion 114a that protrudes inward from its inner peripheral edge. The protrusions 113a and 114a provide the plasma processing apparatus 1 with a labyrinth structure between the outer peripheral surface 113S of the inner ring 113 and the inner peripheral surface 114S of the outer ring 114. The protrusions 113a and 114a also prevent the dielectric layer 120a, the conductor layer 120b, the dielectric layer 130a, and the conductor layer 130b from being exposed to the plasma processing space when viewed from the plasma processing space.

[0032] According to the plasma processing apparatus of the first embodiment, the outer peripheral surface of the inner ring and the inner peripheral surface of the outer ring have a labyrinth structure, which makes it possible to prevent particles from entering between the inner ring and the outer ring.

[0033] Second Embodiment A plasma processing apparatus according to a second embodiment will be described. In addition to the components of the plasma processing apparatus according to the first embodiment, the plasma processing apparatus according to the second embodiment includes a lower convex portion in the outer ring that extends downward from the inner periphery and protects the ceramic layer on the ring support portion that supports the outer ring.

[0034] The inner ring and outer ring in the plasma processing apparatus according to the second embodiment will be described in detail with reference to Fig. 3. Fig. 3 is a diagram illustrating the inner ring 113 and outer ring 214 in a plasma processing apparatus 1A, which is an example of the plasma processing apparatus according to the second embodiment. The inner ring 113, the dielectric layer 120a, and the conductor layer 120b are described in detail in the plasma processing apparatus 1, and will not be described here.

[0035] The plasma processing apparatus 1A includes a peripheral portion 230 instead of the peripheral portion 130 in the plasma processing apparatus 1. The peripheral portion 230 in the plasma processing apparatus 1A includes a dielectric layer 230a and a conductive layer 230b.

[0036] The dielectric layer 230a is, for example, a ceramic layer made of ceramics. The dielectric layer 230a constitutes, for example, an electrostatic chuck. The dielectric layer 230a includes an electrode for the electrostatic chuck.

[0037] The conductive layer 230b is made of a metal such as aluminum, and supports the dielectric layer 230a.

[0038] The inner ring 113 has a convex portion 113a that protrudes outward from its outer peripheral edge. The inner peripheral surface 214S of the outer ring 214 is located outside the outermost periphery WS of the substrate W. The outer ring 214 has a convex portion 214a that protrudes inward from its inner peripheral edge. The convex portions 113a and 214a provide the plasma processing apparatus 1 with a labyrinth structure between the outer peripheral surface 113S of the inner ring 113 and the inner peripheral surface 214S of the outer ring 214. The convex portions 113a and 214a also prevent the dielectric layer 120a, the conductor layer 120b, the dielectric layer 230a, and the conductor layer 230b from being exposed to the plasma processing space when viewed from the plasma processing space.

[0039] The outer ring 214 further includes a lower convex portion 214b that protrudes downward to protect the dielectric layer 230a in the peripheral portion 230 on which the outer ring 214 is placed. The lower convex portion 214b is provided so as to cover the inner surface 230aS of the dielectric layer 230a.

[0040] The plasma processing apparatus according to the second embodiment has a labyrinth structure between the outer peripheral surface of the inner ring and the inner peripheral surface of the outer ring, which prevents particles from entering between the inner ring and the outer ring. Also, the plasma processing apparatus according to the second embodiment has a downwardly protruding portion, which protects the ceramic layer around the periphery where the outer ring is placed.

[0041] The peripheral portion 130 is an example of a ring support portion, and the dielectric layer 230a is an example of a ceramic layer.

[0042] Third Embodiment A plasma processing apparatus according to a third embodiment will be described. In addition to the plasma processing apparatus according to the first embodiment, the plasma processing apparatus according to the third embodiment includes a convex portion extending outward on the outer peripheral surface of the inner ring. Furthermore, the plasma processing apparatus according to the third embodiment includes a groove portion on the inner peripheral surface of the outer ring into which the convex portion is inserted.

[0043] The inner ring and outer ring in the plasma processing apparatus according to the third embodiment will be described in detail with reference to Fig. 4. Fig. 4 is a diagram illustrating the inner ring 113 and outer ring 314 in a plasma processing apparatus 1B, which is an example of the plasma processing apparatus according to the third embodiment. The inner ring 113, the dielectric layer 120a, and the conductor layer 120b are described in detail in the plasma processing apparatus 1, and will not be described here.

[0044] The plasma processing apparatus 1B includes a peripheral portion 330 instead of the peripheral portion 130 in the plasma processing apparatus 1. The peripheral portion 330 in the plasma processing apparatus 1B includes a dielectric layer 330a and a conductor layer 330b.

[0045] The dielectric layer 330a is, for example, a ceramic layer made of ceramics. The dielectric layer 330a constitutes, for example, an electrostatic chuck. The dielectric layer 330a includes an electrode for the electrostatic chuck.

[0046] The conductive layer 330b is made of a metal such as aluminum, and supports the dielectric layer 330a.

[0047] The inner ring 113 has a convex portion 113a that protrudes outward from its outer peripheral edge. The outer ring 314 has a convex portion 314a that protrudes inward from its inner peripheral edge. An inner peripheral surface 314S of the outer ring 314 is located outside the outermost periphery WS of the substrate W. The outer ring 314 also has a convex portion 314b that protrudes inward from its inner peripheral edge. The convex portions 314a and 314b form a groove 314g into which the convex portion 113a is inserted. The convex portions 113a, 314a, and 314b (groove 314g) provide the plasma processing apparatus 1 with a labyrinth structure between the outer peripheral surface 113S of the inner ring 113 and the inner peripheral surface 314S of the outer ring 314. Furthermore, the convex portions 113a, 314a, and 314b respectively prevent the dielectric layer 120a, the conductor layer 120b, the dielectric layer 330a, and the conductor layer 330b from being exposed to the plasma processing space when viewed from the plasma processing space.

[0048] The outer ring 314 is formed, for example, by joining an upper member 314A and a lower member 314B, which are formed as separate upper and lower parts, as shown by line CL in Fig. 4. For example, before joining the upper member 314A and the lower member 314B together, the convex portion 113a of the inner ring 113 is inserted into the portion that will become the groove 314g of the outer ring 314. Then, by joining the upper member 314A and the lower member 314B together, the convex portion 113a is inserted into the groove 314g.

[0049] According to the plasma processing apparatus of the third embodiment, a labyrinth structure is provided between the outer peripheral surface of the inner ring and the inner peripheral surface of the outer ring, thereby preventing particles from entering between the inner ring and the outer ring. Also, according to the plasma processing apparatus of the third embodiment, the convex portions extending outward on the outer peripheral surface of the inner ring are inserted into grooves formed on the inner peripheral surface of the outer ring, thereby further preventing particles from entering even when the outer ring moves up and down.

[0050] Fourth Embodiment A plasma processing apparatus according to a fourth embodiment will be described. In addition to the components of the plasma processing apparatus according to the first embodiment, the plasma processing apparatus according to the fourth embodiment includes an inner ring having a first flat plate portion extending outward and a first convex portion extending upward. The outer ring also includes a second flat plate portion extending inward and a second convex portion extending downward.

[0051] The inner ring and the outer ring in the plasma processing apparatus according to the fourth embodiment will be described in detail with reference to Fig. 5. Fig. 5 is a diagram illustrating the inner ring 413 and the outer ring 414 in a plasma processing apparatus 1C, which is an example of the plasma processing apparatus according to the fourth embodiment. The description of the dielectric layer 120a and the conductive layer 120b is omitted here, and reference should be made to the description of the plasma processing apparatus 1.

[0052] The plasma processing apparatus 1C includes a peripheral portion 430 instead of the peripheral portion 130 in the plasma processing apparatus 1. The peripheral portion 430 in the plasma processing apparatus 1C includes a dielectric layer 430a and a conductive layer 430b.

[0053] The dielectric layer 430a is, for example, a ceramic layer made of ceramics. The dielectric layer 430a constitutes, for example, an electrostatic chuck. The dielectric layer 430a includes an electrode for the electrostatic chuck.

[0054] The conductive layer 430b is made of a metal such as aluminum, and supports the dielectric layer 430a.

[0055] The inner ring 413 includes, at its outer peripheral edge, a flat plate portion 413a extending outward and a convex portion 413b extending upward from the outer end of the flat plate portion 413a. The substrate support surface 120S of the main body 120 that supports the substrate W is higher than the upper surface 413T of the inner ring 413. The outer ring 414 includes, at its inner peripheral edge, a flat plate portion 414a extending inward and a convex portion 414b extending downward from the inner end of the flat plate portion 414a. The outer ring 414 further includes a lower convex portion 414c that protrudes downward and protects the dielectric layer 430a in the peripheral portion 430 on which the outer ring 414 is placed. The lower convex portion 414c is provided to cover the inner surface 430aS of the dielectric layer 430a. The inner circumferential surface 414S of the outer ring 414 is provided outside the outermost periphery WS of the substrate W.

[0056] Due to the flat plate portion 413a, the convex portion 413b, the flat plate portion 414a, and the convex portion 414b, the plasma processing apparatus 1C has a labyrinth structure between the outer peripheral surface 413S of the inner ring 413 and the inner peripheral surface 414S of the outer ring 414. Furthermore, due to the flat plate portion 413a and the flat plate portion 413b, the dielectric layer 120a, the conductor layer 120b, the dielectric layer 330a, and the conductor layer 330b are not exposed to the plasma processing space when viewed from the plasma processing space.

[0057] According to the plasma processing apparatus of the fourth embodiment, the labyrinth structure on the outer peripheral surface of the inner ring and the inner peripheral surface of the outer ring can prevent particles from entering between the inner ring and the outer ring. Also, according to the plasma processing apparatus of the fourth embodiment, the first convex portion and the second convex portion can further prevent particles from entering.

[0058] The flat plate portion 413a is an example of a first flat plate portion, the convex portion 413b is an example of a first convex portion, the flat plate portion 414a is an example of a second flat plate portion, and the convex portion 414b is an example of a second convex portion.

[0059] Fifth Embodiment A plasma processing apparatus according to a fifth embodiment will be described. The plasma processing apparatus according to the fifth embodiment includes a ring support for supporting an outer ring, separate from a substrate support for supporting a substrate to be processed. FIG. 6 is a diagram illustrating a plasma processing apparatus 1D, which is an example of the plasma processing apparatus according to the fifth embodiment. The plasma processing apparatus 1D includes a plasma processing chamber 510, a gas supply unit 20, a power supply 30, and an exhaust system 40. For components of the plasma processing apparatus 1D that are common to the plasma processing apparatus 1, the description of the plasma processing apparatus 1 should be referred to, and detailed description thereof will be omitted.

[0060] The plasma processing apparatus 1D includes, instead of the substrate support portion 11 in the plasma processing apparatus 1, a substrate support portion 511 that supports each of the substrate W and the inner ring 113, and a ring support portion 530 that is provided separately from the substrate support portion 511 and supports the outer ring 114.

[0061] The substrate support portion 511 includes a main body portion 520. The main body portion 520 has a central region (substrate support surface) 520S for supporting the substrate W. The main body portion 520 supports the substrate W and the inner ring 113.

[0062] The ring support part 530 has an annular region (ring support surface) 530S for supporting the outer ring 114. The ring support part 530 supports the outer ring 114. The ring support part 530 is provided on the substrate support part 511 outside the main body part 520. The ring support part 530 supports the substrate W so that it can move in the vertical direction. The annular region 530S of the ring support part 530 surrounds the central region 520S of the main body part 520 in a plan view. The substrate W is placed on the central region 520S of the main body part 520, and the outer ring 114 is placed on the annular region 530S of the ring support part 530 so as to surround the substrate W on the central region 520S of the main body part 520.

[0063] The main body 520 has a similar configuration to the main body 120. The ring support 530 has a similar configuration to the main body 120 in the substrate support 11. In addition, the plasma processing apparatuses according to the second to fourth embodiments may be provided with a ring support that supports the outer ring, separate from the substrate support that supports the substrate to be processed.

[0064] The plasma processing apparatus according to the fifth embodiment can prevent particles from entering between the inner ring and the outer ring, similar to the plasma processing apparatuses according to the first to fourth embodiments. Furthermore, the plasma processing apparatus according to the fifth embodiment includes a ring support, which allows the apparatus to be handled independently of the substrate support.

[0065] Sixth Embodiment A plasma processing apparatus according to a sixth embodiment will now be described. The plasma processing apparatus according to the sixth embodiment includes pins for vertically moving the outer ring. FIG. 7 is a diagram illustrating a plasma processing apparatus 1E, which is an example of the plasma processing apparatus according to the sixth embodiment. The plasma processing apparatus 1E includes a peripheral portion 630 instead of the peripheral portion 130 in the plasma processing apparatus 1. The plasma processing apparatus 1E also includes pins 631 for vertically moving the outer ring 114. Note that a plurality of pins 631 may be provided to stably move the outer ring 114 vertically.

[0066] Similar to the peripheral portion 130, the peripheral portion 630 includes a dielectric layer 630a and a conductive layer 630b. The peripheral portion 630 is fixed to the main body portion 120. Meanwhile, the pin 631 is movable in the vertical direction as indicated by the arrow B. When the pin 631 moves in the vertical direction, the outer ring 114 moves in the vertical direction.

[0067] In addition, the plasma processing apparatuses according to the second to fifth embodiments may be provided with pins that move the outer ring in the vertical direction, as in the plasma processing apparatus according to the sixth embodiment, and the outer ring may be moved in the vertical direction by the pins.

[0068] The plasma processing apparatus according to the sixth embodiment can prevent particles from entering between the inner ring and the outer ring, similar to the plasma processing apparatuses according to the first to fifth embodiments. Furthermore, the plasma processing apparatus according to the sixth embodiment can move the outer ring in the vertical direction by using pins.

[0069] The plasma processing apparatus according to the present embodiment disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above-described embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent.

[0070] This application claims priority from basic patent application No. 2023-209077, filed with the Japan Patent Office on December 12, 2023, the entire contents of which are incorporated herein by reference.

[0071] 1, 1A, 1B, 1C, 1D, 1E Plasma processing apparatus 10, 510 Plasma processing chamber 11, 511 Substrate support portion 113, 413 Inner ring 113a Convex portion 113S, 413S Outer peripheral surface 113T, 413T Upper surface 413a Flat portion 413b Convex portion 114, 214, 314, 414 Outer ring 114a, 214a, 314a Convex portion 114S, 214S, 314S, 414S Inner peripheral surface 120S, 520S Substrate support surface 214b Lower convex portion 314g Groove portion 414a Flat portion 414b Convex portion 130, 230, 330, 430, 630 Peripheral portion 530 Ring support portion 530S Ring support surface 130a, 230a, 330a, 430a, 630a Dielectric layer 130b, 230b, 330b, 430b, 630b Conductive layer 230aS Inner surface 631 Pin W Substrate WS Outermost periphery

Claims

1. A substrate support section that supports the substrate to be processed, An inner ring supported by the substrate support portion and provided on the lower side of the substrate, The substrate and the outer ring provided on the outside of the inner ring, Equipped with, The substrate support surface in the substrate support portion that supports the substrate is higher than the upper surface of the inner ring. The inner circumferential surface of the outer ring is provided outside the outermost periphery of the substrate. The inner ring has a labyrinth structure between its outer surface and the outer ring's inner surface. The outer ring has a downward protrusion that extends downward from the inner circumference and protects the ceramic layer in the ring support portion to which the outer ring is supported. Plasma processing equipment.

2. A substrate support portion for supporting a substrate to be processed, An inner ring supported by the substrate support portion and provided on the lower side of the substrate, The substrate and the outer ring provided on the outside of the inner ring, Equipped with, The substrate support surface in the substrate support portion that supports the substrate is higher than the upper surface of the inner ring. The inner circumferential surface of the outer ring is provided outside the outermost periphery of the substrate. The inner ring has a labyrinth structure between its outer surface and the outer ring's inner surface. The inner ring has a protrusion extending outward on its outer surface, The outer ring has a groove on its inner circumferential surface into which the protrusion is inserted. Plasma processing equipment.

3. A substrate support portion that supports a substrate to be processed, An inner ring supported by the substrate support portion and provided on the lower side of the substrate, The substrate and the outer ring provided on the outside of the inner ring, A ring support portion is provided separately from the substrate support portion and supports the outer ring, Equipped with, The substrate support surface in the substrate support portion that supports the substrate is higher than the upper surface of the inner ring. The inner circumferential surface of the outer ring is provided outside the outermost periphery of the substrate. The inner ring has a labyrinth structure between its outer surface and the outer ring's inner surface. The inner ring is supported by the substrate support portion. Plasma processing equipment.

4. The substrate support portion supports the outer ring. A plasma processing apparatus according to either claim 1 or claim 2.

5. The substrate support portion includes a pin that moves the outer ring in the vertical direction. A plasma processing apparatus according to either claim 1 or claim 2.