Plasma processing device

Abstract

This plasma processing device comprises a plasma processing chamber, a substrate support table, and a control unit. The substrate support table is disposed in the plasma processing chamber and includes a base and an electrostatic chuck which is disposed on the base. The electrostatic chuck has a first zone and a second zone different from the first zone. A first heater is disposed in the first zone. A second heater is disposed in the second zone. The control unit is configured to control the duty cycles of pulsed power applied to the first heater and pulsed power applied to the second heater, in accordance with: the resistance value ratio of the resistance value of the second heater to the resistance value of the first heater; and the thermal resistance ratio of the thermal resistance of the substrate support table corresponding to the second zone to the thermal resistance of the substrate support table corresponding to the first zone.