Garnet type crystal, production method for same, optical isolator using same, and optical processing equipment
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Filing Date
- 2024-12-21
- Publication Date
- 2026-07-23
AI Technical Summary
Conventional methods for growing terbium scandium aluminum garnet (TSAG) crystals, such as the Czochralski method, result in high defect rates, instability, and increased production costs due to the use of expensive crucibles, leading to reduced transmittance and resistance to high-power lasers.
A solvothermal method is employed to produce garnet-type crystals with controlled defects and stable composition by reacting raw materials containing terbium, aluminum, and optionally scandium, under lower temperature and pressure conditions, using mineralizers to suppress crack formation and oxygen deficiencies.
The method produces high-quality garnet-type crystals with suppressed crack generation and improved transmittance, suitable for optical isolators, reducing production costs and extending the lifespan of optical isolators.