Bonding method and bonding system

Abstract

This bonding method includes: a first hydrophilization treatment step for hydrophilizing a temporary bonding surface of a temporary substrate (WTD), to said temporary bonding surface a chip (CP) being to be temporarily bonded; a second hydrophilization treatment step for hydrophilizing a surface of the chip (CP), the surface being on the reverse side of a bonding surface (CPf) that is to be bonded to a substrate (W1); a first temporary bonding step for temporarily bonding the surface on the reverse side of the bonding surface (CPf) of the chip (CP) to the temporary bonding surface (WTDf) of the temporary substrate (WTD) after the first hydrophilization treatment step and the second hydrophilization treatment step; a first bonding step for bonding the chip (CP) to the substrate (W1) by bringing the temporary substrate (WTD) close to the substrate (W1) and bringing the bonding surface (CPf) of the chip (CP) into contact with the bonding surface of the substrate (W1) in a state in which the temporary bonding surface (WTDf) side of the temporary substrate (WTD) faces the substrate (W1) after the first temporary bonding step; and a first temporary substrate separation step for separating the temporary substrate (WTD) from the chip (CP) while maintaining the state in which the chip (CP) is bonded to the substrate (W1).

Description

Joining method and joining system

[0001] The present invention relates to a joining method and a joining system.

[0002] An electronic component mounting method has been proposed in which multiple chips are stacked and arranged flat on a substrate, in which the multiple chips are arranged face-up on a resin layer formed on a temporary substrate and temporarily fixed, the temporary substrate is then turned upside down so that the multiple chips are held face-down on the temporary substrate, and the substrate and temporary substrate are brought relatively close together, thereby bonding the chips held on the temporary substrate and the chips mounted on the substrate to each other, and then the temporary substrate is separated from the chips while maintaining the bonded state of the chips (see, for example, Patent Document 1).

[0003] International Publication No. 2012 / 133760

[0004] However, in the electronic component mounting method described in Patent Document 1, the chips are temporarily fixed to a resin layer, so when a temporary substrate holding multiple chips is pressed against a substrate on which multiple chips are mounted to join them, the position of the chips held on the temporary substrate may shift, making it difficult to mount the chips on the substrate with high positional accuracy.

[0005] The present invention has been made in view of the above circumstances, and has an object to provide a bonding method and a bonding system that can bond a chip to a substrate with high positional accuracy.

[0006] In order to achieve the above-mentioned object, the bonding method of the present invention includes: a first hydrophilization process for hydrophilizing at least one of a temporary bonding surface of a temporary substrate to which at least one first chip is temporarily bonded and a side of the at least one first chip opposite to the bonding surface side bonded to the substrate; a first temporary bonding process for, after the first hydrophilization process, temporarily bonding the side of the at least one first chip opposite to the bonding surface side to the temporary bonding surface of the temporary substrate; a first main bonding process for, after the first temporary bonding process, bonding the at least one first chip to the substrate by bringing the temporary substrate relatively close to the substrate with the temporary bonding surface side of the temporary substrate facing the substrate and bringing the bonding surface of the at least one first chip into contact with the bonding surface of the substrate; and a first temporary substrate peeling process for peeling the temporary substrate from the at least one first chip while maintaining the at least one first chip bonded to the substrate.

[0007] According to the present invention, the chip can be bonded to the substrate with high positional accuracy.

[0008] 1 is a schematic diagram of a bonding system according to an embodiment of the present invention. FIG. 2 is a schematic front view of a portion of a bonding system according to an embodiment. FIG. 3 is a schematic configuration diagram of a portion of a chip bonding apparatus according to an embodiment. FIG. 4 is a diagram showing the positional relationship between an alignment mark of a chip and a hollow portion of a head according to an embodiment. FIG. 5 is a cross-sectional view showing a portion of a head according to an embodiment, illustrating a state in which a chip is held by the head. FIG. 6 is a cross-sectional view showing a portion of a head according to an embodiment, illustrating a state in which a central portion of the chip is pressed. FIG. 7 is a schematic perspective view showing a portion of a bonding unit according to an embodiment. FIG. 8 is a cross-sectional arrow view taken along line A-A in FIG. 3 of a chip bonding apparatus according to an embodiment. FIG. 9 is a diagram showing two alignment marks provided on a chip. FIG. 10 is a diagram showing two alignment marks provided on a temporary substrate. FIG. 11 is a plan view of a stage of a chip bonding apparatus according to an embodiment. FIG. 12 is a side view of a stage of a chip bonding apparatus according to an embodiment. FIG. 13 is an explanatory diagram of the operation of a chip bonding apparatus according to an embodiment. FIG. 14 is a plan view showing an example of a dummy chip according to an embodiment. FIG. 15 is a schematic cross-sectional view of an activation treatment apparatus according to an embodiment. FIG. 16 is a schematic front view of a substrate bonding apparatus according to an embodiment. FIG. 17 is a schematic cross-sectional view of a stage and head of a substrate bonding apparatus according to an embodiment. FIG. 18 is a diagram showing two alignment marks provided on a temporary substrate. FIG. 19 is a diagram showing two alignment marks provided on a substrate. FIG. 1 is a block diagram showing a part of the functional configuration of a control unit according to an embodiment. FIG. 2 is a schematic diagram showing a captured image of alignment marks on a chip and a temporary substrate. FIG. 3 is a schematic diagram showing a state in which the alignment marks on the chip and the temporary substrate are misaligned with each other. FIG. 4 is a block diagram showing the functional configuration of a control unit according to an embodiment. FIG. 5 is a diagram showing an example of information stored in a parameter storage unit according to an embodiment. FIG. 6 is an explanatory diagram of the operation of a bonding device according to an embodiment. FIG. 7 is a schematic diagram showing a captured image of alignment marks on a temporary substrate and a substrate. FIG. 8 is a schematic diagram showing a state in which the alignment marks on a temporary substrate and a substrate are misaligned with each other. FIG. 9 is a flowchart showing the flow of a bonding method performed by a bonding system according to an embodiment. FIG. 10 is a diagram showing an activation process according to an embodiment. FIG. 11 is a flowchart showing the flow of an attitude adjustment process performed by a chip bonding device according to an embodiment. FIG. 12 is a flowchart showing the flow of processes performed by a chip bonding device according to an embodiment.FIG. 1 is a flowchart showing a flow of processes executed by a substrate bonding apparatus according to an embodiment. FIG. 1 is a diagram showing a bonding method according to an embodiment, illustrating a state in which a temporary substrate is brought close to a substrate. FIG. 2 is a diagram showing a bonding method according to an embodiment, illustrating a state in which a chip temporarily bonded to a temporary substrate is bonded to a substrate. FIG. 3 is a diagram showing a state in which a temporary substrate is peeled off from a chip. FIG. 4 is a diagram showing a state in which a temporary substrate is separated from a chip. FIG. 5 is a diagram showing a bonding method according to an embodiment, illustrating a state in which a temporary substrate is brought close to a substrate to which a chip is bonded. FIG. 6 is a diagram showing a state in which a chip temporarily bonded to a temporary substrate is bonded in a stacked manner to a chip bonded to a substrate. FIG. 7 is a diagram showing a state in which a temporary substrate is peeled off from a chip. FIG. 8 is a diagram showing a state in which a temporary substrate is separated from a chip. FIG. 9 is a diagram showing a length of a piezoelectric element of a piezoelectric actuator for each chip in a bonding apparatus according to a comparative example. FIG. 10 is a diagram showing a length of a piezoelectric element of a piezoelectric actuator for each chip in a bonding apparatus according to an embodiment. FIG. 11 is a schematic front view of a substrate bonding apparatus according to a modified example. FIG. 12 is a schematic configuration diagram of a part of a chip bonding apparatus according to a modified example. FIG. 13 is a block diagram showing a functional configuration of a control unit according to a modified example. It is a flowchart showing a flow of an attitude adjustment process executed by the tip joining device according to the modified example. It is a schematic configuration diagram of a part of the tip joining device according to the modified example. It is a schematic configuration diagram of a part of the tip joining device according to the modified example. It is a schematic configuration diagram of a part of the tip joining device according to the modified example.

[0009] A chip bonding system according to an embodiment of the present invention will be described below with reference to the drawings. The chip bonding system according to this embodiment temporarily fixes multiple chips on a temporary substrate, then places the temporary substrate opposite the substrate to which the multiple chips have been bonded, and then brings the temporary substrate close to the substrate, bringing the multiple chips temporarily fixed on the temporary substrate into contact with the multiple chips bonded to the substrate and bonding them. Examples of chips include semiconductor chips that are provided with through-electrodes that penetrate in the thickness direction, and in which an insulating material and a conductive material are exposed on the bonding surface to be bonded to the substrate or another chip. Here, examples of the insulating material include SiO ２ , Al ２ O３ Examples of the conductive material include oxides such as silicon dioxide, nitrides such as silicon nitride, silicon oxynitrides such as silicon dioxide, and resins. Examples of the conductive material include semiconductor materials such as silicon dioxide and germanium, and metals such as copper, aluminum, and solder. In other words, the chip may have a plurality of regions formed on its bonding surface, each region being made of a different material. Specifically, the chip may have an electrode and an insulating film provided on its bonding surface, and the insulating film may be made of silicon dioxide or a silicon dioxide. ２ , Al ２ O ３ The insulating layer 10 may be formed of an oxide such as silicon dioxide or a nitride such as silicon nitride or aluminum nitride.

[0010] As shown in FIG. 1 , the chip bonding system 1 according to this embodiment includes a chip supply device 10, a substrate bonding device 20, a chip transport device 39, a chip bonding device 30, an activation treatment device 60, a transport device 70, a carry-in / out unit 80, a cleaning device 85, and a control unit 90. The transport device 70 includes a transport robot 71 having an arm for grasping annular frames RI2 and RI3 that hold a temporary substrate WTD or a sheet TE to which chips CP are attached. Here, the sheet TE is made of, for example, resin. As indicated by arrow AR11, the transport robot 71 is capable of moving the annular frames RI2 and RI3 that hold the temporary substrate WTD, substrate W1, or sheet TE to which chips CP are attached, received from the carry-in / out unit 80, to positions where the frames are transferred to the substrate bonding device 20, the activation treatment device 60, the cleaning device 85, the chip bonding device 30, and the chip supply device 10, respectively.

[0011] When the transfer robot 71 receives the temporary substrate WTD from the carry-in / out unit 80, it moves to a position where it will be transferred to the activation treatment device 60 while holding the received temporary substrate WTD, inverts the temporary substrate WTD while holding the temporary substrate WTD, and then transfers the temporary substrate WTD to the activation treatment device 60. Furthermore, after the activation treatment of the temporary substrate WTD is completed in the activation treatment device 60, the transfer robot 71 receives the temporary substrate WTD from the activation treatment device 60, inverts the temporary substrate WTD while holding the received temporary substrate WTD, and then transfers the temporary substrate WTD to the cleaning device 85. Furthermore, after the water cleaning of the temporary substrate WTD is completed in the cleaning device 85, the transfer robot 71 receives the temporary substrate WTD from the cleaning device 85, inverts the temporary substrate WTD while holding the received temporary substrate WTD, and then moves to a position where it will be transferred to the chip bonding device 30. The transfer robot 71 then transfers the temporary substrate WTD to the chip bonding device 30. Furthermore, when the transport robot 71 receives the substrate W1 from the carry-in / out unit 80, it moves to a position where it will transfer the substrate W1 to the activation treatment device 60 while holding the received substrate W1, and transfers the substrate W1 to the activation treatment device 60. After the activation treatment of the substrate W1 is completed in the activation treatment device 60, the transport robot 71 receives the substrate W1 from the activation treatment device 60 and transfers the received substrate W1 to the substrate bonding device 20.

[0012] Furthermore, when the transport robot 71 receives from the carry-in / out unit 80 the annular frames RI2, RI3 holding the sheet TE to which a plurality of chips CP are attached, the transport robot 71 moves the received annular frames RI2, RI3 while holding them to a position where the frames RI2, RI3 will be transferred to the activation processing device 60, turns over the frames RI2, RI3, and then transfers the frames RI2, RI3 to the activation processing device 60. Furthermore, after the activation processing of the bonding surfaces of the chips CP attached to the sheet TE held by the frames RI2, RI3 is completed in the activation processing device 60, the transport robot 71 receives the annular frames RI2, RI3 from the activation processing device 60, turns over the frames RI2, RI3 while holding them, and then transfers them to the cleaning device 85. Furthermore, after the cleaning device 85 has completed water cleaning of the chips CP attached to the sheet TE held by the annular frames RI2 and RI3, the transport robot 71 receives the annular frames RI2 and RI3 from the cleaning device 85, and while holding the received annular frames RI2 and RI3, inverts them and transfers them to the chip supply device 10. Also, a HEPA (High Efficiency Particulate Air) filter (not shown), for example, is installed inside the transport device 70. This creates an atmospheric pressure environment with extremely few particles inside the transport device 70.

[0013] The cleaning device 85 includes a stage 852 that supports the temporary substrate WTD, the substrate W1, or the annular frames RI2 and RI3; a stage driver 853 that rotates and drives the stage 852; a cleaning head 851 that is positioned vertically above the stage 852 and ejects water vertically downward; and a cleaning head driver (not shown) that moves the cleaning head 851 horizontally. The stage 852 includes a suction unit that adsorbs the temporary substrate WTD, the substrate W1, or the sheet TE, and adsorbs and holds the temporary substrate WTD, the substrate W1, or the sheet TE that has multiple chips CP attached and is held by the annular frames RI2 and RI3. The stage 852 may also hold the annular frames RI2 and RI3 together with the sheet TE. The cleaning head driver has a mechanism for moving the cleaning head 851 in the X-axis and Y-axis directions. In the cleaning device 85, with the temporary substrate WTD, substrate W1 or sheet TE supported on the stage 852, the stage drive unit 853 rotates the stage 852 around the central axis of the temporary substrate WTD, substrate W1 or annular frame RI2, RI3 along the Z-axis direction, and sprays water from the cleaning head 851 toward the temporary substrate WTD, substrate W1 or sheet TE while moving the cleaning head 851 horizontally, i.e., in the X-axis direction or Y-axis direction, to water-clean multiple chips CP attached to the temporary substrate WTD, substrate W1 or sheet TE.

[0014] The chip supply device 10 cuts out one chip CP from among the multiple chips CP attached to the sheet TE and supplies the chip CP to the chip bonding device 30. As shown in FIG. 2 , the chip supply device 10 includes a chip supply unit 11. The chip supply unit 11 includes a frame support unit 112, a pickup mechanism 111 that picks up one chip CP from among the multiple chips CP, and a suction holder 114. The frame support unit 112 supports annular frames RI2 and RI3 that hold the sheet TE to which the multiple chips CP are attached. Note that the frame support unit 112 may support only the annular frame RI2 or only the annular frame RI3. The chip supply unit 11 also includes a frame drive unit 113 that drives the annular frames RI2 and RI3 in the XY directions or in a direction rotating around the Z axis. The frame support portion 112 holds the annular frames RI2 and RI3 in an orientation in which the surface of the sheet TE to which the plurality of chips CP are attached faces vertically upward (in the +Z direction).

[0015] The pickup mechanism 111 cuts out at least one chip from among the plurality of chips CP. Specifically, the pickup mechanism 111 pushes out a protrusion target portion of the sheet TE, to which the one chip CP to be protruded is attached, from the side of the sheet TE opposite the side of the plurality of chips CP, thereby protruding the one chip CP. The pickup mechanism 111 has pins 111a and is movable in the vertical direction as shown by arrow AR24 in FIG. 4. There are, for example, four pins 111a. However, the number of pins 111a may be three, or five or more. The suction holding unit 114 suction-holds the outer periphery of the protrusion target portion of the sheet TE protruded by the tip of the pin 111a.

[0016] The chip transport device 39 transports the chips CP supplied from the chip supply unit 11 to a transfer position Pos1 where the chips CP are transferred to the head 33H of the bonding unit 33 of the chip bonding device 30. As shown in FIG. 1 , the chip transport device 39 includes a long plate 391, a chip holder 393 provided at the tip of the plate 391, and a plate driver 392 that rotates the plates 391 in unison and moves them vertically. The plate 391 is long and plate-shaped, with one end pivoting around the other end located between the chip supply unit 11 and the head 33H. Note that the number of plates 391 may be multiple. When receiving the chips CP, the chip holder 393 is positioned opposite the chips CP protruded in the +Z direction by the pickup mechanism 111. The chip holder 393 then suction-holds the chips CP protruded in the +Z direction by the pickup mechanism 111. 1, the pickup mechanism 111 and the head 33H are disposed in positions in the Z-axis direction that overlap with the trajectory OB1 traced by the tip of the chip holding unit 393 when the plate 391 rotates. When the chip transport device 39 receives the chip CP from the pickup mechanism 111, it rotates the plate 391 about the axis AX, as shown by the arrow AR12 in FIG. 1, to transport the chip CP to a transfer position Pos1 where the chip CP overlaps with the head 33H. Then, with the chip CP disposed at the transfer position Pos1, the chip transport device 39 moves the plate 391 in the -Z direction, thereby bringing the chip CP into contact with the tip of the head 33H and then releasing the hold of the chip CP, thereby transferring the chip CP from the chip holding unit 393 to the head 33H.

[0017] The chip bonding device 30 is a so-called chip mounter that temporarily bonds the chip CP onto the temporary substrate WTD, and includes a stage unit 31, a bonding section 33 having a head 33H, a head driving section 36 that drives the head 33H, imaging sections 35a and 35b, and a laser sensor 51. As shown in FIG. 3 , the chip bonding device 30 also includes a camera F-direction driving section 365 and a camera Z-direction driving section 363.

[0018] The bonding section 33 has a Z-axis direction moving member 331, a first disk member 332, a piezo actuator 333, a second disk member 334, a mirror fixing member 336, a mirror 337, and a head 33H. The first disk member 332 is fixed to the upper end of the Z-axis direction moving member 331. Furthermore, the second disk member 334 is disposed above the first disk member 332. The first disk member 332 and the second disk member 334 are connected via the piezo actuator 333. Furthermore, the head 33H is fixed to the upper surface side of the second disk member 334. The head 33H adsorbs and holds the chip CP.

[0019] The head 33H holds the chip CP from vertically below (in the -Z direction). The head 33H includes a chip tool 411 and a head main body 413. The chip tool 411 is made of a material (e.g., silicon (Si)) that transmits imaging light (e.g., infrared light). The head main body 413 also includes a temperature control unit 417 that adjusts the temperature of the chip CP held by the chip tool 411. The temperature control unit 417 includes a ceramic heater, a coil heater, or the like. The head main body 413 also includes hollow portions 415 and 416 for transmitting (passing through) the imaging light. Each hollow portion 415 and 416 is a transparent portion that transmits the imaging light and is provided to penetrate the head main body 413 in the vertical direction (Z-axis direction). As shown in FIG. 4, each hollow portion 415 and 416 has an elliptical shape when viewed from above. The two hollow portions 415, 416 are arranged point-symmetrically about the axis AX at diagonal corners of the head main body 413, which has a generally square shape in top view. Holes 334a, 334b ​​are also provided in the second disk member 334 at portions corresponding to the hollow portions 415, 416 to allow imaging light to pass through. As shown in FIG. 5A , the tip tool 411 has a suction groove 411a provided in the tip tool 411 for suction-holding the periphery of the tip CP, a communication passage 411c communicating with the suction groove 411a, and a through-hole 411b through which a pressing portion 413b (described later) is inserted. The head main body 413 also has a suction portion 413d that suctions gas inside the suction groove 411a via the communication passage 411c, a pressing portion 413b that is vertically movable in the center, and a pressing drive portion 413c that drives the pressing portion 413b. 5B , the chip bonding device 30 drives the pressing portion 413b in the vertical direction as indicated by the arrow AR25 while the peripheral portion of the chip CP is held by suction in the suction groove 411a, whereby the chip CP is bent so that its central portion protrudes toward the temporary substrate WTD beyond its peripheral portion as indicated by the arrow AR26.

[0020] The piezo actuators 333 adjust at least one of the distance between the temporary bonding surface WTDf of the temporary substrate WTD and the bonding surface CPf of the chip CP, and the inclination of the chip CP with respect to the temporary bonding surface WTDf of the temporary substrate WTD. As shown in FIG. 6A , three piezo actuators 333 are present between the first disk member 332 and the second disk member 334, and each is expandable and contractible in the Z direction. By controlling the degree of expansion and contraction of each of the three piezo actuators 333, the inclination angle of the second disk member 334 and, ultimately, the head 33H with respect to the horizontal plane is adjusted. At least one of the distance between the bonding surface CPf of the chip CP held by the head 33H and the temporary bonding surface WTDf of the temporary substrate WTD and the inclination of the bonding surface CPf of the chip CP held by the head 33H with respect to the temporary bonding surface WTDf of the temporary substrate WTD is adjusted. The three piezo actuators 333 are arranged at positions that do not block the illumination light (including reflected light) for the imaging units 35a and 35b.

[0021] 3, the mirror 337 is fixed to the first disk member 332 via a mirror fixing member 336, and is disposed in the gap between the first disk member 332 and the second disk member 334. The mirror 337 has inclined surfaces 337a and 337b that are inclined diagonally downward at an angle of 45 degrees. Photographing light that is incident on the inclined surfaces 337a and 337b of the mirror 337 from the first imaging units 35a and 35b is reflected upward.

[0022] The head driver 36 moves the head 33H holding the chip CP vertically upward (in the +Z direction) to bring the head 33H closer to the stage 315 and bring the chip CP into contact with the temporary substrate WTD. The head driver 36 includes a Z-direction driver 34, a rotating member 361, and a θ-direction driver 37. The Z-direction driver 34 includes a servo motor, a ball screw, and the like. The Z-direction driver 34 is provided on the lower end side of the rotating member 361 (described below) and drives the Z-axis moving member 331 of the bonding unit 33 in the Z-axis direction, as indicated by arrow AR21. When the Z-direction driver 34 moves the Z-axis moving member 331 in the Z direction, the head 33H provided at the upper end of the bonding unit 33 moves in the Z direction accordingly. That is, the head 33H is driven in the Z direction by the Z-direction driver 34.

[0023] The rotating member 361 has a cylindrical shape, and as shown in FIG. 6B , the cross section of the hollow interior portion is octagonal. On the other hand, the Z-axis moving member 331 has a rod-shaped portion with an octagonal cross section and is inserted inside the rotating member 361. Furthermore, linear guides 38 are provided between four of the eight side surfaces of the Z-axis moving member 331 and the inner surface of the rotating member 361, such that the Z-axis moving member 331 slides relative to the rotating member 361 in the Z-axis direction. When the rotating member 361 rotates around the rotation axis AX, the Z-axis moving member 331 rotates in conjunction with the rotating member 361. That is, the bonding portion 33 and the rotating member 361 rotate in conjunction with each other around the rotation axis AX, as indicated by arrow AR22.

[0024] The θ-direction driving unit 37 has a servo motor, a reducer, etc., and is fixed to a fixed member (not shown) provided in the chip bonding device 30, as shown in FIG. 3. The θ-direction driving unit 37 supports the rotating member 361 so that the rotating member 361 is rotatable about the axis AX. The θ-direction driving unit 37 rotates the rotating member 361 about the rotation axis AX in response to a control signal input from the control unit 90.

[0025] The imaging units 35a and 35b image the chip CP from a position vertically below the chip CP, i.e., from the -Z direction, with the chip CP placed at the position on the temporary substrate WTD where the chip CP will be mounted. The imaging unit 35a is fixed to the rotating member 361 via a camera Z-direction drive unit 363 and a camera F-direction drive unit 365. The imaging unit 35b is also fixed to the rotating member 361 via a camera Z-direction drive unit 363 and a camera F-direction drive unit 365. This causes the first imaging units 35a and 35b to rotate together with the rotating member 361. Here, as described above, the mirror 337 is fixed to the Z-axis direction moving member 331, and the rotating member 361 and the Z-axis direction moving member 331 rotate in conjunction with each other. Therefore, the relative positional relationship between the image pickup units 35a, 35b and the mirror 337 remains unchanged, and therefore, regardless of the rotation of the rotating member 361, the photographing light reflected by the mirror 337 is guided to the image pickup units 35a, 35b.

[0026] The chip CP is provided with two alignment marks MC1a and MC1b, for example, as shown in FIG. 7A. Furthermore, at least one region AWD1 on the temporary substrate WTD to which the chip CP is temporarily bonded is each provided with two alignment marks MWD1a and MWD1b, for example, as shown in FIG. 7B. The imaging units 35a and 35b each acquire image data including images of the alignment marks MC1a and MC1b provided on the chip CP and images of alignment marks MWD1a and MWD1b (described below) provided on the temporary substrate WTD. Based on the image data acquired by the imaging units 35a and 35b, the control unit 90 recognizes the relative position of each chip CP with respect to the temporary substrate WTD in a direction parallel to the temporary bonding surface WTDf to which the chip CP is temporarily bonded on the temporary substrate WTD. As shown in FIG. 3, the imaging units 35a and 35b each include an image sensor 351a, 351b, an optical system 352a, 352b, and a coaxial illumination system (not shown). The imaging units 35a and 35b each acquire image data related to the reflected light of illumination light (e.g., infrared light) emitted from a light source (not shown) of the coaxial illumination system. The illumination light emitted horizontally from the coaxial illumination system of the imaging units 35a and 35b is reflected by the inclined surfaces 337a and 337b of the mirror 337, changing its direction of travel vertically upward. The light reflected by the mirror 337 then travels toward the imaging target area, which includes the chip CP held by the head 33H and the temporary substrate WTD arranged opposite the chip CP, and is reflected by each imaging target area. Here, alignment marks MC1a and MC1b (described later) are provided in the imaging target portion of the chip CP, and alignment marks MWD1a and MWD1b (described later) are provided in the imaging target portion of the temporary substrate WTD. Reflected light from the imaging target portions of the chip CP and temporary substrate WTD travels vertically downward, then is reflected again by the inclined surfaces 337a and 337b of the mirror 337, where its direction of travel is changed to the horizontal direction, and reaches the imaging units 35a and 35b. In this way, the imaging units 35a and 35b acquire image data of the imaging target portions of the chip CP and temporary substrate WTD. Here, the hollow portions 415 and 416 of the head 33H rotate around the axis AX in conjunction with the rotation of the rotating member 361.4, when the imaging units 35a, 35b are positioned on a diagonal line connecting two corners where the alignment marks MC1a, MC1b of the chip CP are provided, the imaging units 35a, 35b can acquire imaging data of the alignment marks MC1a, MC1b through the hollow portions 415, 416. Here, the imaging units 35a, 35b simultaneously capture images of the alignment marks MC1a, MC1b and the alignment marks MWD1a, MWD1b in a state where the alignment marks MC1a, MC1b of the chip CP and the alignment marks MWD1a, MWD1b of the temporary substrate WTD are spaced apart by a predetermined distance that falls within the depth of field of the imaging units 35a, 35b.

[0027] The camera F-direction driver 365 adjusts the focal positions of the image capture units 35a and 35b by driving the image capture units 35a and 35b in the focus direction, as indicated by arrow AR23 in FIG. 3 . The camera Z-direction driver 363 drives the first image capture units 35a and 35b in the Z-axis direction, as indicated by arrow AR4. The camera Z-direction driver 363 typically moves the image capture units 35a and 35b so that the amount of movement of the Z-axis moving member 331 in the Z-axis direction is the same as the amount of movement of the image capture units 35a and 35b in the Z-axis direction. In this way, when the head 33H moves in the Z-axis direction, the image capture target areas of the image capture units 35a and 35b do not change before and after the movement. However, the camera Z-direction driver 363 may move the image capture units 35a and 35b so that the amount of movement of the image capture units 35a and 35b in the Z-axis direction is different from the amount of movement of the Z-axis moving member 331 in the Z-axis direction. In this case, the relative positions of the imaging units 35a, 35b and the mirror 337 in the Z direction change, and therefore the portions of the chip CP and temporary substrate WTD that are to be imaged by the imaging units 35a, 35b change.

[0028] The stage unit 31 includes a stage 315 that holds the temporary substrate WTD with the temporary bonding surface WTDf, to which the chips CP are temporarily bonded, facing vertically downward, i.e., in the -Z direction. The stage 315 is formed into a plate-like shape from glass that is transparent to the laser light emitted from the laser sensor 51. As shown in FIGS. 8A and 8B , the stage unit 31 also includes an X-direction moving unit 311, a Y-direction moving unit 313, a stage 315, an X-direction driving unit 321, and a Y-direction driving unit 323. The X-direction moving unit 311 is fixed to a base member 302, which is fixed to a housing (not shown) of the chip bonding device 30, via two X-direction driving units 321. The two X-direction driving units 321 each extend in the X direction and are spaced apart in the Y direction. The X-direction driving unit 321 has a linear motor and a slide rail, and moves the X-direction moving unit 311 in the X direction relative to the fixed member 301. The Y-direction moving unit 313 is disposed below (in the -Z direction) the X-direction moving unit 311 via two Y-direction driving units 323. The two Y-direction driving units 323 each extend in the Y direction and are disposed spaced apart in the X direction. The Y-direction driving unit 323 has a linear motor and a slide rail, and moves the Y-direction moving unit 313 in the Y direction relative to the X-direction moving unit 311. The X-direction driving unit 321 and the Y-direction driving unit 323 constitute a stage driving unit that drives the stage 315 in the horizontal direction.

[0029] The stage 315 is fixed to the Y-direction moving unit 313. The stage 315 moves in the X and Y directions in response to the movements of the X-direction driving unit 321 and the Y-direction driving unit 323. An opening 312 that is rectangular in plan view is provided in the center of the X-direction moving unit 311, and an opening 314 that is rectangular in plan view is also provided in the center of the Y-direction moving unit 313. As a result, the stage unit 31 moves the stage 315 in the X and Y directions, thereby changing the relative positional relationship between the head 33H of the bonding unit 33 and the stage 315, and adjusting the temporary bonding positions of each chip CP on the temporary substrate WTD held by the stage 315.

[0030] The laser sensor 51 is disposed vertically above the stage 315, i.e., on the +Z direction side, and measures the distance between the surface on the -Z direction side of the stage 315 and the surface on the +Z direction side of the chip CP by irradiating a laser beam from the +Z direction side of the stage 315 toward the chip CP held by the head 33H. As shown in FIG. 9, for example, with a dummy chip CPD held by the head 33H, the laser sensor 51 measures the distance between a holding surface 315f that holds a temporary substrate WTD on the -Z direction side of the stage 315 and a reflecting surface CPDf on the +Z direction side of the dummy chip CPD held by the head 33H. Here, the dummy chip CPD has regions TEG1, TEG2, and TEG3 formed from metal disposed at three locations on the reflecting surface CPDf, as shown in FIG. 10, for example. Then, the laser sensor 51 measures the distances L11, L12, and L13 between the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD in the portions corresponding to the regions TEG1, TEG2, and TEG3.

[0031] The activation treatment device 60 performs activation treatment to activate the temporary bonding surface WTf of the temporary substrate WTD, the bonding surface of the substrate W1, or the bonding surface CPf of the chip CP. The activation treatment device 60 performs activation treatment on annular frames RI2 and RI3, which hold the temporary substrate WTD, the substrate W1, or the sheet TE to which the chip CP is attached, set on a single treatment surface without facing each other. As shown in FIG. 11 , the activation treatment device 60 includes a chamber 64, a support unit 62 for supporting the temporary substrate WTD, the substrate W1, or the annular frames RI2 and RI3, a particle beam source 61, and a beam source transport unit 63. The chamber 64 is connected to a vacuum pump 652 via an exhaust pipe 651. When the vacuum pump 652 is activated, gas within the chamber 64 is exhausted to the outside of the chamber 64 through the exhaust pipe 651, reducing the air pressure within the chamber 64.

[0032] The support unit 62 has frame holding units 621 that hold the annular frames RI2 and RI3, a cover 622, and a suction holding unit 623 that suction-holds the temporary substrate WTD, the substrate W1, or the sheet TE. When the temporary substrate WTD or the substrate W1 is loaded, the support unit 62 suction-holds it using the suction holding unit 623. When the annular frames RI2 and RI3 that hold the sheet TE are loaded, the support unit 62 supports the annular frames RI2 and RI3 using the frame holding units 621. The support unit 62 supports the holding frames 112 that hold the sheet TE to which the chips CP are attached, in a state where they are set on one processing surface, without being arranged opposite each other. The cover 622 is formed, for example, from glass, and covers the annular frames RI2 and RI3, which hold the sheet TE with the chips CP attached, on one side of the sheet TE, and the area outside the area where the chips CP are attached, when the annular frames RI2 and RI3 are held by the frame holder 621. Here, if multiple chips CP are obtained by dicing a substrate (not shown) that is circular in plan view, they are attached to the circular area on the sheet TE. In this case, the cover 622 is shaped to cover the area outside the circular area on the sheet TE where the multiple chips CP are attached. This prevents the particle beam source 61 from irradiating the sheet TE with a particle beam except for the area where the chips CP are attached.

[0033] The particle beam source 61 is, for example, a fast atom beam (FAB) source and includes a discharge chamber 612, an electrode 611 disposed within the discharge chamber 612, a beam source driver 613, and a gas supplier 614 for supplying Ar gas into the discharge chamber 612. The peripheral wall of the discharge chamber 612 is provided with an FAB outlet 612a for emitting neutral atoms. The discharge chamber 612 is made of a carbon material. The discharge chamber 612 has a long box shape, with multiple FAB outlets 612a aligned in a straight line along its longitudinal direction. The beam source driver 613 includes a plasma generator (not shown) for generating Ar gas plasma within the discharge chamber 612 and a DC power supply (not shown) for applying a DC voltage between the electrode 611 and the peripheral wall of the discharge chamber 612. The beam source driver 613 applies a DC voltage between the peripheral wall of the discharge chamber 612 and the electrode 611 while generating a plasma of Ar gas in the discharge chamber 612. At this time, Ar ions in the plasma are attracted to the peripheral wall of the discharge chamber 612. At this time, the Ar ions heading toward the FAB emission port 612a receive electrons from the peripheral wall of the discharge chamber 612, which is made of a carbon material and located on the outer periphery of the FAB emission port 612a, as they pass through the FAB emission port 612a. These nitrogen ions then become electrically neutralized Ar atoms and are emitted outside the discharge chamber 612, as indicated by arrow AR33. However, some of the Ar ions are unable to receive electrons from the peripheral wall of the discharge chamber 612 and are emitted outside the discharge chamber 612 as Ar ions.

[0034] The beam source transport unit 63 includes a long support rod 631 that is inserted through a hole 64a in the chamber 64 and supports the particle beam source 61 at one end, a support 632 that supports the support rod 631 at the other end, and a support driver 633 that drives the support 632. The beam source transport unit 63 also includes a bellows 634 that is interposed between the outer periphery of the hole 64a in the chamber 64 and the support 632 to maintain the vacuum level within the chamber 64. The support driver 633 drives the support 632 in a direction that inserts and removes the support rod 631 into and from the chamber 64, as indicated by arrow AR31, thereby changing the position of the particle beam source 61 within the chamber 64, as indicated by arrow AR32. Here, the beam source transport unit 63 moves the particle beam source 61 in a direction perpendicular to the arrangement direction of its multiple FAB emission ports 612a.

[0035] 12 , the substrate bonding apparatus 20 includes a chamber 2200, a stage 2401, a head 2402, a stage driving unit 2403, a head driving unit 2404, a substrate heating unit 2420, and a position measuring unit 2500. The substrate bonding apparatus 20 also includes a distance measuring unit (not shown) that measures the distance between the stage 2401 and the head 2402.

[0036] The chamber 2200 is connected to a vacuum pump 2201 via an exhaust pipe 2202C and an exhaust valve 2203C. When the exhaust valve 2203C is opened and the vacuum pump 2201 is operated, the gas inside the chamber 2200 is exhausted to the outside of the chamber 2200 through the exhaust pipe 2202C, reducing (depressurizing) the air pressure inside the chamber 2200. The air pressure (degree of vacuum) inside the chamber 2200 can be adjusted by adjusting the amount of exhaust by changing the opening / closing amount of the exhaust valve 2203C. A window 2503 is provided in part of the chamber 2200 and is used to measure the relative position between the temporary substrate WTD and the substrate W1 by the position measurement unit 2500.

[0037] The stage 2401 and the head 2402 are disposed in the chamber 2200 so as to face each other in the Z direction. The stage 2401 supports the substrate W1 on its upper surface, and the head 2402 supports the temporary substrate WTD on its lower surface. The upper surface of the stage 2401 and the lower surface of the head 2402 may be roughened to allow for the temporary substrate WTD and the substrate W1 to come into contact with the stage 2401 and the head 2402 as mirror surfaces, making them less likely to peel off from the stage 2401 and the head 2402, as shown in FIG. 13 . The stage 2401 and the head 2402 include electrostatic chucks 2441, 2451, 2461, 2442, 2452, and 2462 that hold the substrate W1 and the temporary substrate WTD, a first pressing mechanism 2431 that presses the center of the substrate W1, and a second pressing mechanism 2432 that presses the center of the temporary substrate WTD. The electrostatic chucks 2441, 2451, 2461, 2442, 2452, and 2462 have different diameters and are arranged concentrically. The substrate W1 and temporary substrate WTD are attracted to the electrostatic chucks 2441, 2451, 2461, 2442, 2452, and 2462 provided on the stage 2401 and head 2402, and are held on the stage 2401 and head 2402. Here, the electrostatic chucks 2461 and 2462 face the centers of the substrate W1 and temporary substrate WTD, respectively, and the electrostatic chucks 2441, 2451, 2442, and 2452 face the peripheral portions of the substrate W1 and temporary substrate WTD, respectively.

[0038] The electrostatic chucks 2441, 2451, 2461, 2442, 2452, and 2462 can be in a state where they attract the substrate W1 and the temporary substrate WTD, respectively, or in a state where they do not attract the substrate W1 and the temporary substrate WTD. For example, the electrostatic chucks 2461 and 2462, which are arranged relatively inside the stage 401 and the head 402, can be put into a state where they do not attract the substrate W1 and the temporary substrate WTD, and the electrostatic chucks 2441, 2451, 2442, and 2452, which are arranged relatively outside the stage 401 and the head 402, can be put into a state where they attract the substrate W1 and the temporary substrate WTD.

[0039] The first pressing mechanism 2431 is provided in the center of the stage 2401, and the second pressing mechanism 2432 is provided in the center of the head 2402. The first pressing mechanism 2431 has a first pressing unit 2431a that can be retracted toward the head 2402, and a first pressing drive unit 2431b that drives the first pressing unit 2431a. The second pressing mechanism 2432 has a second pressing unit 2432a that can be retracted toward the stage 2401, and a second pressing drive unit 2432b that drives the second pressing unit 2432a. For example, the pressing drive units 2431b and 2432b can be configured to drive the first pressing unit 2431a and the second pressing unit 2432a by controlling the air pressure in cylinders into which portions of the first pressing unit 2431a and the second pressing unit 2432a are fitted. Alternatively, voice coil motors may be used as the first pressing drive unit 2431b and the second pressing drive unit 2432b. The tops of the first pressing unit 2431a and the second pressing unit 2432a that come into contact with the substrate W1 and the temporary substrate WTD have a dome-like shape. The first pressing unit 2431a and the second pressing unit 2432a perform either pressure control, which controls the pressure applied to the substrate W1 and the temporary substrate WTD to be kept constant, or position control, which controls the contact positions of the substrate W1 and the temporary substrate WTD to be kept constant. For example, by position-controlling the first pressing unit 2431a and pressure-controlling the second pressing unit 2432a, the substrate W1 and the temporary substrate WTD are pressed at a constant position with a constant pressure.

[0040] The substrate heating unit 2480 is composed of heaters 2481 and 2482. The heaters 2481 and 2482 are composed of, for example, electric heaters. The heaters 2481 and 2482 heat the substrate W1 and temporary substrate WTD by transferring heat to the substrate W1 and temporary substrate WTD supported by the stage 2401 and head 2402. In addition, by adjusting the heat generation amounts of the heaters 2481 and 2482, the temperatures of the substrate W1, temporary substrate WTD, or their bonding surfaces can be adjusted.

[0041] Returning to FIG. 12, the stage driving unit 2403 can move the stage 2401 in the X and Y directions and rotate it around the Z axis.

[0042] The head driving unit 2404 has an elevation driving unit 2406 that raises and lowers the head 2402 vertically upward or downward (see arrow AR201), an XY direction driving unit 2405 that moves the head 2402 in the X and Y directions, and a rotation driving unit 2407 that rotates the head 2402 in a rotation direction around the Z axis (see arrow AR202). The head driving unit 2404 also has a piezo actuator 2411 that adjusts the inclination of the head 2402 with respect to the stage 2401, and a second pressure sensor 2412 that measures the pressure applied to the head 2402. The XY direction drive unit 2405 and the rotation drive unit 2407 move the head 2402 relative to the stage 2401 in the X direction, the Y direction, and the rotation direction around the Z axis, thereby enabling alignment between the substrate W1 held on the stage 2401 and the temporary substrate WTD held on the head 2402.

[0043] The lifting / lowering driver 2406 moves the head 2402 downward, thereby bringing the stage 2401 and the head 2402 closer to each other. The lifting / lowering driver 2406 also moves the head 2402 upward, thereby separating the stage 2401 and the head 2402. When the lifting / lowering driver 2406 moves the head 2402 downward, the substrate W1 held on the stage 2401 and the temporary substrate WTD held on the head 2402 come into contact with each other. When the lifting / lowering driver 2406 applies a driving force to the head 2402 in a direction that moves it closer to the stage 2401 while the substrate W1 and the temporary substrate WTD are in contact with each other, the temporary substrate WTD is pressed against the substrate W1. The lifting / lowering driver 2406 is also provided with a first pressure sensor 2408 that measures the driving force that the lifting / lowering driver 2406 applies to the head 2402 in a direction that moves it closer to the stage 2401. The pressure acting on the bonding surfaces of the temporary substrate WTD and the substrate W1 when the temporary substrate WTD is pressed against the substrate W1 by the lifting / lowering drive unit 2406 can be detected from the measurement value of the first pressure sensor 2408. The first pressure sensor 2408 is formed of, for example, a load cell.

[0044] There are multiple piezo actuators 2411 and multiple second pressure sensors 2412. The multiple piezo actuators 2411 and multiple second pressure sensors 2412 are arranged between the head 2402 and the XY-direction drive unit 2405. The multiple piezo actuators 2411 are fixed at three non-collinear positions on the top surface of the head 2402 and at multiple positions equally spaced around the periphery of the top surface of the head 2402, which is circular in plan view. The second pressure sensors 2412 each connect the upper end of the piezo actuator 2411 to the lower surface of the XY-direction drive unit 2405. Each piezo actuator 2411 is expandable and contractable in the vertical direction. The expansion and contraction of the multiple piezo actuators 2411 finely adjusts the tilt of the head 2402 around the X-axis and Y-axis and the vertical position of the head 2402. Furthermore, the second pressure sensor 2412 measures the pressure applied at a plurality of positions on the lower surface of the head 2402. Then, by driving each of the plurality of piezo actuators 2411 so that the pressures measured by the second pressure sensor 2412 become equal, the substrate W1 or the chip CP bonded to the substrate W1 can be brought into contact with the chip CP temporarily fixed to the temporary substrate WTD while maintaining the lower surface of the head 2402 parallel to the upper surface of the stage 2401.

[0045] The distance measurement unit is composed of a laser rangefinder and measures the distance between the stage 2401 and the head 2402 without contacting the stage 2401 or the head 2402. Specifically, for example, if the head 2402 is transparent, the distance measurement unit measures the distance between the stage 2401 and the head 2402 from the difference between the light reflected from the upper surface of the stage 2401 and the light reflected from the lower surface of the head 2402 when a laser beam is irradiated from above the head 2402 toward the stage 2401. The distance measurement unit measures the distances between a plurality of locations on the upper surface of the stage 2401 and a plurality of locations on the lower surface of the head 2402 that face the above-mentioned plurality of locations on the stage 2401 in the Z direction.

[0046] The position measurement unit 2500 measures the amount of misalignment between the substrate W1 and the temporary substrate WT1 in directions perpendicular to the up-down direction, i.e., the XY directions and the rotational direction. The position measurement unit 2500 has multiple (two in FIG. 3 ) imaging units 2501 and 2502, and mirrors 2504 and 2505. The imaging units 2501 and 2502 each have an imaging element (not shown) and a coaxial illumination system. The light sources for the coaxial illumination systems of the imaging units 2501 and 2502 are light sources that emit light (e.g., infrared light) that transmits through windows 2503 provided in the substrate W1, temporary substrate WTD, stage 2401, and chamber 2200.

[0047] 14A and 14B, for example, two marks (hereinafter referred to as "alignment marks") MK1a and MK1b are provided on the substrate W1, and two alignment marks MK2a and MK2b are provided on the temporary substrate WTD. The substrate bonding apparatus 20 performs an alignment operation (alignment operation) for the substrate W1 and the temporary substrate WTD while recognizing the positions of the alignment marks MK1a, MK1b, MK2a, and MK2b provided on the substrate W1 and the temporary substrate WTD using the position measurement unit 2500. More specifically, the substrate bonding apparatus 20 first performs a rough alignment operation (rough alignment operation) for the substrate W1 and the temporary substrate WTD, while recognizing the alignment marks MK1a, MK1b, MK2a, and MK2b provided on the substrate W1 and the temporary substrate WTD using the position measurement unit 2500, to place the substrate W1 and the temporary substrate WTD opposite each other. Thereafter, with the substrate W1 and the temporary substrate WTD facing each other, the substrate bonding apparatus 20 performs a more precise alignment operation (fine alignment operation) while simultaneously recognizing the alignment marks MK1a, MK2a, MK1b, and MK2b provided on the substrate W1 and the temporary substrate WTD using the position measurement unit 2500. Here, the imaging units 2501 and 2502 simultaneously capture images of the alignment marks MK1a, MK1b and the alignment marks MK2a and MK2b with the alignment marks MK1a, MK1b and the alignment marks MK2a and MK2b spaced apart by a predetermined distance that falls within the depth of field of the imaging units 2501 and 2502.

[0048] 12 , light emitted from a light source (not shown) of a coaxial illumination system of the imaging unit 2501 is reflected by a mirror 2504, travels upward, and passes through a window 2503 and part or all of the substrate W1 and temporary substrate WTD (see dashed arrows SC1 and SC2 in FIG. 12 ). The light that has passed through part or all of the substrate W1 and temporary substrate WTD is reflected by alignment marks MK1a and MK2a on the substrate W1 and temporary substrate WTD, travels downward, passes through the window 2503, is reflected by a mirror 2504, and enters the image sensor of the imaging unit 2501. Meanwhile, light emitted from a light source (not shown) of a coaxial illumination system of the imaging unit 2502 is reflected by a mirror 2505, travels upward, and passes through a window 2503 and part or all of the substrate W1 and temporary substrate WTD. Light that has passed through part or all of the substrate W1 and temporary substrate WTD is reflected by alignment marks MK1b and MK2b on the substrate W1 and temporary substrate WTD, travels downward, passes through the window portion 2503, is reflected by the mirror 2505, and enters the imaging element of the imaging portion 2502.

[0049] The control unit 90 controls the chip supply device 10, the substrate bonding device 20, the chip transport device 39, the chip bonding device 30, the activation treatment device 60, the transport device 70, and the cleaning device 85, respectively. The control unit 90 has a CPU (Central Processing Unit), a main memory, an auxiliary memory, an interface, and a bus connecting each unit. The main memory is composed of volatile memory and is used as a work area for the CPU. The auxiliary memory is composed of nonvolatile memory and stores programs executed by the CPU. The auxiliary memory also stores information indicating preset positional deviation thresholds Δxth, Δyth, and Δθth for calculated relative positional deviations Δx, Δy, and Δθ of the chip CP with respect to the temporary substrate WTD (described later), and information indicating preset positional deviation thresholds Δxth, Δyth, and Δθth for calculated relative positional deviations Δx, Δy, and Δθ of the temporary substrate WTD with respect to the substrate W1 (described later). The CPU functions as a chip bonding control unit 901 that controls the chip bonding device 30 and a substrate bonding control unit 902 that controls the substrate bonding device 20, as shown in Figure 15, by reading the program stored in the auxiliary memory unit into the main memory and executing it.

[0050] As shown in FIG. 16A, the chip bonding control unit 901 acquires a captured image GAa including alignment marks MC1a and MWD1a between the chip CP and the temporary substrate WTD, and a captured image GAb including alignment marks MC1b and MWD1b between the chip CP and the temporary substrate WTD. Then, as shown in FIG. 16B, the chip bonding control unit 901 calculates misalignment amounts Δxa and Δya between a pair of alignment marks MC1a and MWD1a provided on the chip CP and the substrate WT based on the captured image GAa acquired from the imaging unit 35a. Note that FIG. 16B shows a state in which the pair of alignment marks MC1a and MWD1a are misaligned with each other. Similarly, the chip bonding control unit 901 calculates misalignment amounts Δxb and Δyb between another pair of alignment marks MC1b and MWD1b provided on the chip CP and the substrate WT based on the captured image GAb acquired from the imaging unit 35b. Then, the chip bonding control unit 901 calculates the relative positional misalignment amounts Δx, Δy, and Δθ between the chip CP and the substrate WT in the X direction, Y direction, and rotation direction around the Z axis based on the positional misalignment amounts Δxa, Δya, Δxb, and Δyb of these two sets of alignment marks and the geometric relationship between the two sets of marks. The chip bonding control unit 901 also moves the head 33H in the X direction and Y direction and rotates it around the Z axis so as to reduce the calculated positional misalignment amounts Δx, Δy, and Δθ. This reduces the relative positional misalignment amounts Δx, Δy, and Δθ between the chip CP and the substrate WT.

[0051] 17, the chip bonding control unit 901 also has an attitude control unit 911, a horizontal movement control unit 912, and an elevation control unit 913. Here, the attitude control unit 911 controls the attitude of the head 33H by outputting control signals to the θ-direction drive unit 37 and the piezo actuator 333 via the interface. The horizontal movement control unit 912 controls the horizontal movement operation of the stage 315 by outputting control signals to the X-direction drive unit 321 and the Y-direction drive unit 323 via the interface. The elevation control unit 913 controls the elevation operation of the head 33H by outputting control signals to the Z-direction drive unit 34 via the interface.

[0052] The auxiliary storage unit also has a parameter storage unit 931 that stores parameter information indicating parameters reflecting the attitude of the head 33H when the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD are parallel with each other in a state in which the dummy chip CPD is held by the head 33H. Here, the parameters indicate, for example, the lengths of the piezoelectric elements of each of the three piezo actuators 333. The parameter storage unit 931 stores, for example, parameter information indicating parameters for each of a plurality of pre-set sub-regions SA1, SA2, ..., SA45 inside the region A1 in which the substrate WT is held on the holding surface 315f of the stage 315, as shown in Figure 18 . 19 , the parameter storage unit 931 stores parameter information indicating parameters for each of a plurality of sub-regions SA1, SA2, ..., SA45 in association with region identification information ID_SA1, ID_SA2, ..., ID_SA45 that identifies each sub-region SA1, SA2, ..., SA45. Here, the sub-regions SA1, SA2, ..., SA45 do not need to include all of the planned chip bonding regions on the substrate WT to which chips CP are to be bonded. For example, each sub-region may be set to correspond to one planned chip bonding region representative of each group of planned chip bonding regions, for example, if there are 500 planned chip bonding regions on the substrate WT, the 500 planned chip bonding regions may be divided into several groups, and a region corresponding to one planned chip bonding region representative of each divided group may be set as a sub-region.

[0053] 17 , with the dummy chip CPD held by the head 33H, the horizontal movement control unit 912 controls the X-direction drive unit 321 and the Y-direction drive unit 323 so that one of a plurality of pre-defined sub-regions SA1, SA2, ..., SA45 inside the region on the stage 315 where the substrate WT is held is positioned facing the head 33H. Next, the attitude control unit 911 controls the three piezo actuators 333 to adjust the attitude of the head 33H so that the dummy chip CPD is parallel to the holding surface of the stage 315. Then, the attitude control unit 911 stores, in the parameter storage unit 931, parameter information indicating parameters reflecting the attitude of the head 33H in a state where the attitude of the head 33H has been adjusted, in association with region identification information that identifies the corresponding sub-region. The attitude control unit 911 then repeats these processes for all of the plurality of sub-regions SA1, SA2, ..., SA45.

[0054] The chip bonding apparatus 30 according to this embodiment first performs a parallel adjustment step in which, with the head 33H holding the tammy chip CPD, parameters indicating the attitude of the head 33H corresponding to each of the plurality of sub-regions on the stage 315 are acquired and stored in a parameter storage unit. Thereafter, the chip bonding apparatus 30 uses the parameters stored in the parameter storage unit to sequentially bond the chips CP to the substrate WT while adjusting the attitude of the head 33H for each of the planned chip bonding regions facing each of the plurality of sub-regions.

[0055] 20 , the substrate bonding control unit 902 acquires a captured image GAa including alignment marks MK1a and MK2a of the substrate W1 and temporary substrate WTD, which is captured by the imaging unit 2501 of the position measurement unit 2500, and a captured image GAb including alignment marks MK1b and MK2b of the substrate W1 and temporary substrate WTD, which is captured by the imaging unit 2502. Note that the operation of capturing the captured image GAa by the imaging unit 2501 and the operation of capturing the captured image GAb by the imaging unit 2502 are executed simultaneously.

[0056] Here, the bonding method performed by the bonding system 1 according to this embodiment will be described with reference to FIG. 21 . In this bonding method, multiple layers of chips CP are stacked at multiple locations in the horizontal direction on the substrate W1. After performing an operation of bonding multiple chips CP temporarily bonded to a temporary substrate WTD to the substrate W1, the process of bonding multiple chips CP temporarily bonded to the temporary substrate WTD to chips CP mounted on the substrate W1 is repeated, thereby stacking multiple layers of chips CP on the substrate W1. The stacking operation of chips CP in each layer is similar. However, while the chips CP in the first layer are directly bonded to the substrate W1, in the stacking operation of chips CP in the second layer and beyond, the chips CP are bonded to chips stacked on the substrate W1.

[0057] In this bonding system 1, the activation processing device 60 first performs an activation process to activate the mounting surface of the temporary substrate WTD, and then the cleaning device 85 performs a hydrophilization process to hydrophilize the mounting surface WTDf of the temporary substrate WTD by washing it with water. Also, after the activation processing device 60 performs an activation process to activate multiple chips CP attached to a sheet TE, the cleaning device 85 performs a hydrophilization process to hydrophilize the bonding surfaces CPf of the multiple chips CP attached to the sheet TE by washing them with water (step S1). Here, the activation processing device 60 prepares only one annular frame RI2, RI3 that holds the sheet TE to which multiple chips CP are attached, and irradiates the chips CP attached to the sheet TE held by the prepared annular frame RI2, RI3 with a particle beam. 22, the activation processing device 60 moves the particle beam source 61 in the X-axis direction while irradiating the bonding surfaces CPf of the chips CP with a particle beam as indicated by the arrow AR35. Here, the activation processing device 60, for example, moves the particle beam source 61 in the +X direction to irradiate the bonding surfaces CPf of all chips CP attached to the tape TE with a particle beam, and then moves the particle beam source 61 in the -X direction to irradiate the bonding surfaces CPf of the chips CP. Furthermore, the angle (incident angle) θ1 between the irradiation axis J1 of the particle beam and the normal direction N1 of the virtual plane S1 is set to be 30 degrees or more and 80 degrees or less. At this time, impurities generated from the chips CP or the sheet TE are blown away from the chips CP and do not return to the bonding surfaces CPf of the chips CP.

[0058] 21 , next, the chip bonding device 30 temporarily bonds the plurality of chips CP attached to the sheet TE one by one in order to the temporary substrate WTD (step S2). In this process of temporarily bonding the chips CP to the temporary substrate WTD, it is necessary to temporarily bond the chips CP to the temporary substrate WTD with a weak bonding force so that the chips CP can be peeled off from the temporary substrate WTD. Methods for weakening the bonding force in the temporary bonding include a method of temporarily bonding the chips CP to the temporary substrate WTD by simply performing hydrophilization without performing the activation treatment by the activation treatment device 60, a method of weakening the activation conditions in the activation treatment by the activation treatment device 60, and the like. Examples of hydrophilization methods include: a method of adhering water to the chip CP and the temporary substrate WTD by washing them with water; a method of increasing the humidity of the surface of the chip CP and the temporary substrate WTD by controlling the temperature of the chip CP and the temporary substrate WTD in the atmosphere to adsorb moisture; and a method of adhering water to the surface of the chip CP and the temporary bonding surface of the temporary substrate WTD by supplying water gas to the surface of the chip CP and the temporary bonding surface of the temporary substrate WTD in a chamber. A heat treatment process may be performed after the temporary bonding process of step S2. This can increase the strength of the temporary bonding of the chip CP to the temporary substrate WTD. Furthermore, the strength of the temporary bonding can be increased by performing an activation process before hydrophilization. However, the degree of activation in the activation process should be set to a level that allows the temporary substrate WTD to be smoothly separated from the chip CP in the subsequent process of separating the temporary substrate WTD from the chip CP. Furthermore, by not performing the heat treatment described above, the strength of the temporary bond between the temporary substrate WTD and the chip CP is weakened, and the temporary substrate WTD can be smoothly separated from the chip CP.

[0059] Here, before temporarily bonding the plurality of chips CP to the temporary substrate WTD, the chip bonding device 30 performs an attitude adjustment process to determine the attitude of each of the plurality of locations on the stage 315 .

[0060] The attitude adjustment process performed by the chip bonding apparatus 30 will now be described in detail with reference to FIG. 23 . Here, it is assumed that the head 33H holds a dummy chip CPD, and no substrate WT is held on the stage 315. First, the chip bonding apparatus 30 moves the stage 315, with the dummy chip CPD held by the head 33H, to a position where one of the multiple sub-regions on the stage 315 faces the head 33H (step S201). Here, as shown in FIG. 19 , for example, the multiple sub-regions SA1, SA2, ..., SA45 are each located inside the substrate holding region A1, in which the substrate WT is held, on the holding surface 351f of the stage 315. Furthermore, each of the sub-regions SA1, SA2, ..., SA45 is positioned opposite one of the multiple chip bonding regions to which the chips CP on the substrate WT are bonded, with the substrate WT held in the substrate holding region A1 of the stage 315.

[0061] 23 , the chip bonding device 30 then uses the laser sensor 51 to measure the distance between the portions of the reflecting surface CPDf of the dummy chip CPD corresponding to the three regions TEG1, TEG2, and TEG3 and the holding surface 315f on the −Z direction side of the stage 315 (step S202). The chip bonding device 30 then adjusts the orientation of the head 33H by controlling the degree of expansion and contraction of each of the three piezo actuators 333 so that the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD are parallel (step S203). The chip bonding device 30 then acquires parameters for each of the three piezo actuators 333 when the orientation of the head 33H has been adjusted, and stores parameter information indicating the acquired parameters in the parameter storage unit 931 in association with the corresponding region identification information (step S204).

[0062] Next, the chip bonding apparatus 30 determines whether parameter information corresponding to all sub-regions SA1, SA2, ..., SA45 on the holding surface 315f of the stage 315 has been stored in the parameter storage unit 931 (step S205). Assume that the chip bonding apparatus 30 determines that there are sub-regions SA1, SA2, ..., SA45 for which parameter information has not yet been stored in the parameter storage unit 931 (step S205: No). In this case, the chip bonding apparatus 30 selects one of the sub-regions SA1, SA2, ..., SA45 for which parameter information has not yet been stored in the parameter storage unit 931, and moves the stage 315 to a position facing the selected sub-region SA1, SA2, ..., SA45 by the head 33H (step S201). Subsequently, the processes from step S202 onward are executed again. On the other hand, when the chip bonding device 30 determines that the parameter information corresponding to all of the sub-areas SA1, SA2, . . . , SA45 has been stored in the parameter storage unit 931 (step S205: Yes), it ends the attitude adjustment process.

[0063] Next, the process of temporarily bonding chips CP one by one to a temporary substrate WTD, which is executed by the bonding system 1 according to the present embodiment, will be described with reference to Fig. 24. Before this process is performed, the transfer robot 71 receives the temporary substrate WTD from the cleaning device 85 after water cleaning of the substrate WTD is completed in the cleaning device 85, and then, while holding the received temporary substrate WTD, inverts the temporary substrate WTD and moves it to a position where it will be transferred to the chip bonding device 30. The transfer robot 71 then transfers the temporary substrate WTD to the stage 315 of the chip bonding device 30.

[0064] First, the chip bonding apparatus 30 transfers one chip CP to be temporarily bonded to the temporary substrate WTD to the head 33H (step S101). Next, with the chip CP held by the head 33H, the chip bonding apparatus 30 moves the stage 315 so that the temporary substrate WTD is positioned so that the planned chip bonding position of the chip CP on the temporary substrate WTD faces the head 33H (step S102). Next, the chip bonding apparatus 30 identifies, from the parameter information stored in the parameter storage unit 931, parameter information corresponding to the area identification information of the sub-area facing the planned chip bonding area facing the head 33H (step S103). Thereafter, the chip bonding apparatus 30 adjusts the attitude of the head 33H by controlling the degree of expansion and contraction of the three piezo actuators 333 based on the parameters indicated by the identified parameter information (step S104). Next, the chip bonding device 30 moves the head 33H in a direction approaching the stage 315 to bring the chip CP closer to the temporary substrate WTD (step S105). Here, the chip bonding device 30 bends the chip CP as described below to bring the chip CP closer to the temporary substrate WTD so that the chip CP and the temporary substrate WTD are at a distance that allows them to come into contact with each other.

[0065] Next, the chip bonding device 30 calculates the relative positional deviation amount between the chip CP and the temporary substrate WTD while they are not in contact with each other (step S106). Here, the control unit 90 first acquires captured images GAa and GAb (see FIG. 16A ) of the chip CP and the temporary substrate WTD in a non-contact state from the imaging units 35a and 35b with the bonding surface WTf of the temporary substrate WTD facing the bonding surface CPf of the chip CP. Then, based on the two captured images GAa and GAb, the control unit 90 calculates the positional deviation amounts Δx, Δy, and Δθ of the chip CP and the temporary substrate WTD in the X direction, the Y direction, and the rotational direction around the Z axis, respectively. Specifically, the control unit 90 calculates the positional deviation amounts Δxa and Δya (see FIG. 16B ) using a vector correlation method based on the captured image GAa obtained by simultaneously reading alignment marks MC1a and MWD1a spaced apart in the Z direction, for example. Similarly, the control unit 90 calculates the misalignment amounts Δxb and Δyb using the vector correlation method based on the captured image GAb obtained by simultaneously reading the alignment marks MC1b and MWD1b spaced apart in the Z direction. Then, the control unit 90 calculates the misalignment amounts Δx, Δy, and Δθ in the horizontal direction between the chip CP and the temporary substrate WTD based on the misalignment amounts Δxa, Δya, Δxb, and Δyb.

[0066] 24 , the chip bonding apparatus 30 then calculates a correction amount and a correction direction for moving the chip CP relative to the temporary substrate WTD based on the calculated misalignment amounts Δx, Δy, and Δθ so as to eliminate the misalignment of the chip CP relative to the temporary substrate WTD (step S107). Next, the chip bonding apparatus 30 moves the chip CP by the calculated correction amount in the calculated correction direction while the chip CP and the temporary substrate WT are not in contact with each other (step S108). Subsequently, the chip bonding apparatus 30 bends the chip CP while the chip CP and the temporary substrate WTD are spaced apart (step S109). Here, the chip bonding apparatus 30 bends the chip CP so that the central portion of the bonding surface of the chip CP protrudes toward the temporary substrate WTD relative to the periphery. At this time, the chip bonding device 30 presses the center of the chip CP toward the temporary substrate WTD using the tip of the pressing portion 413b, while the suction grooves 411b at the tip of the head 33H are holding the periphery of the chip CP by suction. This causes the chip CP to bend so that the center of its bonding surface protrudes toward the temporary substrate WTD. Then, the chip bonding device 30 increases the amount of protrusion of the pressing portion 413b of the head 33H, thereby bringing the center of the bonding surface CPf of the chip CP into contact with the center of the bonding surface of the temporary substrate WTD (step S110).

[0067] Thereafter, the control unit 90 calculates the amount of misalignment of the chip CP with respect to the temporary substrate WTD (step S111). The process executed in this step S111 is the same as the process executed in the above-mentioned step S106.

[0068] Next, the control unit 90 determines whether all of the calculated positional deviation amounts Δx, Δy, and Δθ are equal to or less than the preset positional deviation amount thresholds Δxth, Δyth, and Δθth (step S112). Here, the control unit 90 first compares the calculated positional deviation amounts Δx, Δy, and Δθ with the positional deviation amount thresholds Δxth, Δyth, and Δθth stored in the auxiliary storage unit 703. Then, based on the comparison result, the control unit 90 determines whether all of the calculated positional deviation amounts Δx, Δy, and Δθ are equal to or less than the corresponding positional deviation amount thresholds Δxth, Δyth, and Δθth.

[0069] Next, let us assume that the control unit 90 determines that any one of the calculated positional deviation amounts Δx, Δy, and Δθ is greater than the preset positional deviation amount thresholds Δxth, Δyth, and Δθth (step S112: No). In this case, the substrate bonding apparatus 20 separates the bonding surface of the temporary substrate WTD from the bonding surface of the substrate W1 (step S113). At this time, the chip bonding apparatus 30 lowers the head 33H to widen the gap between the chip CP and the temporary substrate WTD, and moves the pressing portion 413b in a direction to embed the head 33H.

[0070] Thereafter, the control unit 90 calculates correction movement amounts for the substrates 301 and 302 to reduce all of the calculated positional deviation amounts Δx, Δy, and Δθ to the positional deviation amount thresholds Δxth, Δyth, and Δθth or less (step S114). Here, the control unit 90 calculates correction movement amounts such that the substrates 301 and 302 are moved by an amount corresponding to the difference between the positional deviation amounts Δx, Δy, and Δθ between the chip CP and the temporary substrate WTD when the chip CP is in contact with the temporary substrate WTD and the positional deviation amount between the chip CP and the temporary substrate WTD when the chip CP is not in contact with the temporary substrate WTD. In this way, by performing alignment with an offset by an amount corresponding to the difference between the positional deviation amount when the chip CP and the temporary substrate WTD are in contact with each other and the positional deviation amount when the chip CP and the temporary substrate WTD are not in contact with each other, if a similar positional deviation due to contact occurs when the chip CP and the temporary substrate WTD come into contact with each other again, the positional deviation between the chip CP and the temporary substrate WTD will be eliminated.

[0071] Next, the chip bonding apparatus 30 performs alignment to correct the relative positional deviations Δx, Δy, and Δθ between the chip CP and the temporary substrate WTD while the chip CP and the temporary substrate WTD are in a non-contact state, i.e., while the chip CP is freely movable horizontally relative to the temporary substrate WTD (step S115). Here, the chip bonding apparatus 30 moves the head 33H in the X direction, the Y direction, and the rotational direction around the Z axis by the correction movement amounts calculated in step S114, while the stage 315 is fixed. In this way, the chip bonding apparatus 30 adjusts the relative position of the chip CP with respect to the temporary substrate WTD while the chip CP and the temporary substrate WTD are spaced apart, so as to reduce the positional deviation between the chip CP and the temporary substrate WTD. Then, the chip bonding apparatus 30 again performs the process of step S109.

[0072] On the other hand, suppose the control unit 90 determines that all of the calculated positional deviation amounts Δx, Δy, and Δθ are equal to or less than the preset positional deviation amount thresholds Δxth, Δyth, and Δθth (step S112: Yes). In this case, the chip bonding device 30 releases the suction grooves 411b of the head 33H from suctioning the peripheral portion of the chip CP, thereby bringing the entire bonding surface of the chip CP into contact with the temporary substrate WTD, thereby temporarily bonding the chip CP to the temporary substrate WTD (step S116). Then, after temporarily bonding the chip CP to the temporary substrate WT, the chip bonding device 30 moves the head 33H to the retracted position.

[0073] Next, the chip bonding apparatus 30 determines whether all chips CP have been bonded to the chip bonding regions on the temporary substrate WTD (step S117). If the chip bonding apparatus 30 determines that there are any chip bonding regions to which chips CP have not yet been temporarily bonded (step S117: No), it again holds one chip CP on the head 33H (step S101) and then executes the processes from step S102 onward. On the other hand, if the chip bonding apparatus 30 determines that all chips CP have been temporarily bonded to the chip bonding regions on the temporary substrate WT (step S117: Yes), it terminates the process of temporarily bonding the chips CP to the temporary substrate WTD. Thereafter, the temporary substrate WTD to which the chips CP have been temporarily bonded may be subjected to a heat treatment. Here, the heat treatment conditions can be appropriately adjusted to control the temporary bonding strength of the chips CP to the temporary substrate WTD.

[0074] Returning to FIG. 21, next, the substrate bonding apparatus 20 performs a step of bonding the plurality of chips CP temporarily bonded to the temporary substrate WTD to the substrate W1 (step S3).

[0075] Here, the step of bonding a plurality of chips CP temporarily bonded to a temporary substrate WTD to a substrate W1, which is executed by the substrate bonding apparatus 20, will be described in detail with reference to FIG. 25 . Prior to this step, after activation processing of the substrate W1 is completed in the activation processing apparatus 60, the transport robot 71 receives the substrate WT1 from the activation processing apparatus 60 and transfers the received substrate W1 to the stage 2401 of the substrate bonding apparatus 20. The transport robot 71 also receives the temporary substrate WTD to which a plurality of chips CP have been temporarily bonded from the chip bonding apparatus 30, and after holding the received temporary substrate WTD, inverts it and transfers it to the head 2402 of the substrate bonding apparatus 20. First, as shown in FIG. 26A , the substrate bonding apparatus 20 moves the head 2402 downward to bring the temporary substrate WTD closer to the substrate W1 (step S301). Here, the substrate bonding apparatus 20 bends the temporary substrate WTD as described below, thereby bringing the temporary substrate WTD closer to the substrate W1 so that the temporary substrate WTD and the substrate W1 are at a distance that allows them to come into contact with each other.

[0076] 25 , the control unit 90 then calculates the relative positional deviation amounts of the temporary substrate WTD with respect to the substrate W1 (step S302). Here, the control unit 90 first acquires captured images GAa and GAb (see FIG. 20A ) of the temporary substrate WTD and the substrate W1 in a non-contact state from the first imaging unit 501 and the second imaging unit 502 of the position measurement unit 2500. The control unit 90 then calculates the positional deviation amounts Δx, Δy, and Δθ of the temporary substrate WTD with respect to the substrate W1 in the X direction, the Y direction, and the rotational direction about the Z axis, based on the two captured images GAa and GAb. Specifically, the control unit 90 calculates the positional deviation amounts Δxa and Δya (see FIG. 20B ) using a vector correlation method based on the captured image GAa obtained by simultaneously reading alignment marks MK1a and MK2a spaced apart in the Z direction, for example. Similarly, based on a captured image GAb obtained by simultaneously reading alignment marks MK1b and MK2b spaced apart in the Z direction, the control unit 90 calculates positional deviation amounts Δxb and Δyb (see FIG. 20B ) using the vector correlation method. Then, based on the positional deviation amounts Δxa, Δya, Δxb, and Δyb, the control unit 90 calculates positional deviation amounts Δx, Δy, and Δθ of the temporary substrate WTD relative to the substrate W1 in the horizontal direction.

[0077] Next, the substrate bonding apparatus 20 performs alignment by moving the temporary substrate WTD relative to the substrate W1 so as to correct the calculated relative positional deviation amounts Δx, Δy, and Δθ of the temporary substrate WTD with respect to the substrate W1 (step S303). Here, the substrate bonding apparatus 20 moves the head 2402 in the X direction, Y direction, and rotational direction around the Z axis while keeping the stage 2401 fixed so as to cancel the positional deviation amounts Δx, Δy, and Δθ.

[0078] Thereafter, the substrate bonding apparatus 20 bends the temporary substrate WTD while the temporary substrate WTD and the substrate W1 are spaced apart (step S304). Here, the substrate bonding apparatus 20 bends the temporary substrate WTD so that the central portion of the bonding surface of the temporary substrate WTD protrudes toward the substrate W1. At this time, the substrate bonding apparatus 20 attracts the temporary substrate WTD with the two electrostatic chucks 2442 and 2452 on the peripheral side of the stage 2401, while stopping the attraction of the temporary substrate WTD by the electrostatic chuck 2462 on the central side of the stage 2401. Then, with the peripheral portion of the temporary substrate WTD attracted to the stage 2401, the substrate bonding apparatus 20 presses the central portion of the temporary substrate WTD toward the substrate W1 with the second pressing unit 2432a. As a result, the temporary substrate WTD bends so that the central portion of its bonding surface protrudes toward the substrate W1. Then, the substrate bonding apparatus 20 increases the protrusion amount of the second pressing portion 2432a of the head 2402, thereby bringing the center of the bonding surface of the temporary substrate WTD into contact with the center of the bonding surface of the substrate W1 (step S305).

[0079] Next, the control unit 90 calculates the amount of misalignment of the temporary substrate WTD with respect to the substrate W1 (step S306). The process executed in step S306 is the same as the process executed in step S302 described above.

[0080] Next, the control unit 90 determines whether all of the calculated positional deviation amounts Δx, Δy, and Δθ are equal to or less than the preset positional deviation amount thresholds Δxth, Δyth, and Δθth (step S307). Here, the control unit 90 first compares the calculated positional deviation amounts Δx, Δy, and Δθ with the positional deviation amount thresholds Δxth, Δyth, and Δθth stored in the auxiliary storage unit 703. Then, based on the comparison result, the control unit 90 determines whether all of the calculated positional deviation amounts Δx, Δy, and Δθ are equal to or less than the corresponding positional deviation amount thresholds Δxth, Δyth, and Δθth.

[0081] Thereafter, it is assumed that the control unit 90 determines that any one of the calculated positional deviation amounts Δx, Δy, and Δθ is greater than the preset positional deviation amount thresholds Δxth, Δyth, and Δθth (step S307: No). In this case, the substrate bonding apparatus 20 separates the bonding surface of the temporary substrate WTD from the bonding surface of the substrate W1 (step S308). At this time, the substrate bonding apparatus 20 raises the head 2402 to widen the gap between the temporary substrate WTD and the substrate W1, while moving the second pressing unit 432a in a direction to embed the head 2402. Here, the substrate bonding apparatus 20 controls the elevation of the head 2402 so that the tensile pressure of the temporary substrate WTD is constant when peeling the temporary substrate WTD from the substrate W1. In addition, the substrate bonding apparatus 20 resumes suction of the temporary substrate WTD by the electrostatic chuck 2462b on the central side of the head 2402.

[0082] Next, the control unit 90 calculates the corrective movement amounts of the substrates 301, 302 to make all of the calculated positional deviation amounts Δx, Δy, Δθ equal to or less than the positional deviation amount threshold values ​​Δxth, Δyth, Δθth (step S309). Here, the control unit 90 calculates the corrective movement amounts such that the substrates 301, 302 are moved by an amount corresponding to the difference between the positional deviation amounts Δx, Δy, Δθ between the temporary substrate WTD and the substrate W1 in a state in which the temporary substrate WTD is in contact with the substrate W1 and the positional deviation amount between the temporary substrate WTD and the substrate W1 in a state in which the temporary substrate WTD is not in contact with the substrate W1. In this way, by offsetting and aligning by an amount of movement equivalent to the difference between the amount of misalignment when the chip CP temporarily bonded to the temporary substrate WTD and the substrate W1 are in contact and the amount of misalignment when the chip temporarily bonded to the temporary substrate WTD and the substrate W1 are not in contact, if a similar misalignment due to contact occurs when the chip CP temporarily bonded to the temporary substrate WTD and the substrate W1 come into contact again, the misalignment between the temporary substrate WTD and the substrate W1 will be eliminated.

[0083] Next, the substrate bonding apparatus 20 performs alignment to correct the relative positional deviations Δx, Δy, and Δθ between the temporary substrate WTD and the substrate W1 while the temporary substrate WTD and the substrate W1 are in a non-contact state, i.e., while the temporary substrate WTD is freely movable in the horizontal direction relative to the substrate W1 (step S310). Here, the substrate bonding apparatus 20 moves the head 2402 in the X direction, the Y direction, and the rotational direction around the Z axis by the correction movement amounts calculated in step S309, while the stage 2401 is fixed. In this way, the substrate bonding apparatus 20 adjusts the relative position of the temporary substrate WTD with respect to the substrate W1 so as to reduce the positional deviation between the temporary substrate WTD and the substrate W1 while the chip CP temporarily bonded to the temporary substrate WTD is spaced apart from the substrate W1. Then, the substrate bonding apparatus 20 again performs the process of step S304.

[0084] On the other hand, suppose the control unit 90 determines that all of the calculated positional deviation amounts Δx, Δy, and Δθ are equal to or less than the preset positional deviation amount thresholds Δxth, Δyth, and Δθth (step S307: Yes). In this case, the substrate bonding apparatus 20 releases the electrostatic chucks 2442 and 2452 from attracting the peripheral portion of the temporary substrate WTD (step S311). As a result, as shown in FIG. 26B , all of the chips CP temporarily bonded to the temporary substrate WTD come into contact with the substrate W1. Returning to FIG. 25 , the substrate bonding apparatus 20 then presses the chips CP temporarily bonded to the temporary substrate WTD against the substrate W1 with all of the bonding surfaces CPf of the chips CP temporarily bonded to the temporary substrate WTD in contact with the bonding surfaces of the substrate W1, thereby permanently bonding the chips CP temporarily bonded to the temporary substrate WTD to the substrate W1 (step S312).

[0085] Returning to FIG. 21 , the substrate bonding apparatus 20 then lifts the head 2402 while the substrate W1 is held by suction on the stage 2401, thereby separating the temporary substrate WTD from the chip CP (step S4). Here, as shown in FIG. 26C , the substrate bonding apparatus 20 gradually increases the distance from the substrate W1 from the periphery of the temporary substrate WTD toward the center, thereby separating the temporary substrate WTD from the substrate W1. Here, the substrate bonding apparatus 20 sequentially separates the temporary substrate WTD from the periphery of the substrate W1 by, for example, inserting a blade between the periphery of the temporary substrate WTD and the periphery of the substrate W1 and then moving the blade in a direction away from the substrate W1. Here, gas may be ejected between the temporary substrate WTD and the substrate W1 to facilitate separation of the temporary substrate WTD from the substrate W1. Then, while the chip CP remains bonded to the substrate W1, the temporary substrate WTD is released from the chip CP as shown in FIG. 27A .

[0086] 21 , after that, the activation processing device 60 again performs an activation process to activate the mounting surface of the temporary substrate WTD, and then the cleaning device 85 performs a hydrophilization process to make the mounting surface WTDf hydrophilic by washing the mounting surface WTDf with water. Also, after the activation processing device 60 performs an activation process to activate the plurality of chips CP attached to the sheet TE, the cleaning device 85 performs a hydrophilization process to make the bonding surfaces CPf of the chips CP hydrophilic by washing the bonding surfaces CPf of the plurality of chips CP attached to the sheet TE with water (step S5).

[0087] Next, the chip bonding device 30 temporarily bonds the plurality of chips CP attached to the sheet TE one by one in order to the temporary substrate WTD (step S6).

[0088] Next, the substrate bonding apparatus 20 performs a step of bonding the plurality of chips CP temporarily bonded to the temporary substrate WTD in a stacked manner to the chips CP bonded to the substrate W1 (step S7). Here, as shown in Fig. 27B, the substrate bonding apparatus 20 brings the temporary substrate WTD close to the substrate W1 with the bonding surface of the temporary substrate WTD to which the chips CP are temporarily bonded facing the substrate W1 to which the chips CP are bonded. Then, as shown in Fig. 27C, the substrate bonding apparatus 20 brings the chips CP temporarily bonded to the temporary substrate WTD into contact with the chips CP bonded to the substrate W1, and then bonds them.

[0089] 21 , the substrate bonding apparatus 20 then lifts the head 2402 while the substrate W1 is held by suction on the stage 2401, thereby separating the temporary substrate WTD from the chip CP (step S8). Here, as shown in FIG. 28A , the substrate bonding apparatus 20 gradually increases the distance from the substrate W1 from the periphery of the temporary substrate WTD toward the center, thereby separating the temporary substrate WTD from the substrate W1. Here, the substrate bonding apparatus 20 gradually separates the temporary substrate WTD from the periphery of the substrate W1 by, for example, inserting a blade between the periphery of the temporary substrate WTD and the periphery of the substrate W1 and then moving the blade in a direction away from the substrate W1. Here, gas may be ejected between the temporary substrate WTD and the substrate W1 to facilitate separation of the temporary substrate WTD from the substrate W1. Then, while the chip CP remains bonded to the chip CP bonded to the substrate W1 in a stacked state, the temporary substrate WTD is separated from the chip CP as shown in FIG. 28B.

[0090] 21 , the bonding system 1 next determines whether or not a preset number N of layers of chips CP (N is an integer equal to or greater than 2) have been stacked (step S9). If the bonding system 1 determines that N layers of chips CP have not yet been stacked (step S9: No), the processing of step S5 is executed again. On the other hand, if the bonding system 1 determines that N layers of chips CP have been stacked (step S9: Yes), the processing ends.

[0091] Here, the performance of the chip bonding apparatus 30 according to the present embodiment will be described in comparison with a comparative example. The chip bonding apparatus according to the comparative example is configured to perform the bonding process without performing the parallelism adjustment process described above. FIGS. 29A and 29B are diagrams showing the transition of the Z-axis length of each of the three piezoelectric actuators when bonding multiple chips CP to the substrate W1 using a bonding apparatus according to the comparative example and the chip bonding apparatus 30 according to the present embodiment, respectively. In the comparative example, as shown in FIG. 29A , it can be seen that the Z-axis length of the piezoelectric element of each of the three piezoelectric actuators 333 for each chip CP expands and contracts relatively significantly. In contrast, in the bonding system 1 according to the present embodiment, as shown in FIG. 29B , it can be seen that the lengths of the piezoelectric elements of the three piezoelectric actuators for each chip CP are maintained approximately constant. Furthermore, in the bonding system 1 according to the present embodiment, the parallelism between the bonding surface WTf of the substrate WT and the bonding surface CPf of the chip CP was within 0.5 μm, and the variation in the amount of misalignment was within ±0.15 μm at 3σ.

[0092] As described above, the bonding system 1 according to this embodiment can bond a chip to a substrate with high positional accuracy.

[0093] In a so-called chip-on-wafer bonding method for bonding multiple chips CP to a single substrate W1, the chips CP are bonded to the substrate W1 one by one, which inevitably requires a long time to bond all of the chips CP to the substrate W1. For example, to bond all 3,600 chips CP to a single substrate W1 in one hour, it would take one second per chip to bond them to the substrate W1. Therefore, it is not realistic to adopt a method in which the chips CP are activated one by one under reduced pressure before bonding them to the substrate W1. Therefore, in the bonding system 1 according to this embodiment, the step of temporarily bonding the chips CP to the temporary substrate WTD in the so-called chip-on-wafer bonding method can be performed in the atmosphere by employing hydrophilic bonding, and the processing time per chip can be one second. Furthermore, in the bonding method according to this embodiment, the so-called wafer-on-wafer bonding method allows the step of permanently bonding at least one chip CP temporarily bonded to the temporary substrate WTD to the substrate W1 all at once to be performed over a period of approximately one hour after performing an activation process under reduced pressure. Furthermore, in the conventional chip-on-wafer method, a bonding method in which the chip CP is bonded to the substrate W1 via solder or the like, i.e., a bonding method using heat and melting that requires raising and lowering the temperature of the chip CP, is difficult to adopt because the bonding process requires a long time. In contrast, the bonding method according to the present embodiment allows the chip CP to be bonded to the substrate W1 using a bonding method using heat and melting in a relatively short time.

[0094] In addition, conventional methods involve mounting chips face-up on resin-coated substrates, leveling chips of different heights and hardening the resin to align the bonding surfaces, or forming bumps later to align the bonding surfaces, bonding them at the wafer level, and then peeling off the substrates (debonding) using ultraviolet light or heat to return them to their chip state and stack them. In this case, if activation processing were performed on the resin-coated substrate, the bonding surface of the chip temporarily fixed to the resin-coated substrate would be contaminated with resin, making it impossible to perform activation processing on the chip. In contrast, the bonding method of this embodiment uses only water to temporarily bond the chip CP to the temporary substrate WTD, ensuring that there is almost no water present in the temporarily bonded state. Therefore, even if activation processing is performed on the bonding surface of the chip CP temporarily bonded to the temporary substrate WTD, the bonding surface of the chip CP will not be contaminated.

[0095] Furthermore, with this conventional method, because the resin layer is thick, there is a risk of misalignment occurring when the chip CP is pressed against the temporary substrate WTD. In contrast, with the bonding method according to the present embodiment, the chip CP is temporarily fixed to the temporary substrate WTD using what is called hydrophilic bonding, which intentionally reduces bonding strength, and then the temporary substrate WTD and the substrate W1 are bonded together. After that, the temporary substrate WTD is repeatedly peeled off from the chip CP, and the chips CP are stacked. In this case, because only a thin layer of water molecules is formed between the chip CP and the temporary substrate WTD, misalignment is unlikely to occur when the temporary substrate WTD is pressed against the chip CP, and the temporary substrate WTD and the substrate W1 can be bonded with high precision without misalignment of the chip CP.

[0096] Furthermore, because deflection of the temporary substrate WTD does not easily cause misalignment of the chips CP, the temporary substrate WTD is deflected so that its central portion protrudes toward the substrate W1 compared to its peripheral portion before being brought into contact with the substrate W1, and then the distance between the peripheral portion of the temporary substrate WTD and the peripheral portion of the substrate W1 is shortened to bond the chips CP temporarily fixed to the temporary substrate WTD and the chips CP bonded to the substrate W1. This reduces misalignment of the temporary substrate WTD with respect to the substrate W1, and therefore allows the chips CP to be bonded to each other with high positional accuracy. For this reason, this is particularly suitable for stacking techniques for chips CP, which require high positional accuracy at the submicron level.

[0097] Furthermore, according to the chip bonding apparatus 30 of this embodiment, by performing a parallelism adjustment step using the dummy chip CPD, parameter information indicating parameters that reflect the attitude of the head 33H that can offset the tilt of the stage 315 at each position where the stage 315 is placed is stored in advance in the parameter storage unit 931, and in the bonding step, the chip CP is bonded to the substrate WT while adjusting the attitude of the head 33H based on the parameter information stored in the parameter storage unit 931. Therefore, even if the tilt of the stage 315 changes depending on the position where the stage 315 is placed, the chip CP can be bonded to the substrate WT with high positional accuracy.

[0098] Although the embodiments of the present invention have been described above, the present invention is not limited to the configurations of the above-described embodiments. For example, as shown in Figure 30, a substrate bonding apparatus 2020 may be configured without a chamber 2200. Note that in Figure 30, the same components as those in the embodiments are denoted by the same reference numerals as in Figure 12. The substrate bonding apparatus 2020 bonds a temporary substrate WTD to a substrate W1 in the atmosphere.

[0099] In the embodiment, for example, as shown in Figure 31, the stage unit 3031 may include a plurality of piezo actuators 3316 that are fixed to the Y-direction moving section 313 on the +Z direction side and hold the stage 315 at the end on the -Z direction side. Note that in Figure 31, the same components as those in the embodiment are denoted by the same reference numerals as in Figures 3 and 8B.

[0100] 32 , the chip bonding control unit 3901 of the control unit has an attitude control unit 3911, a horizontal movement control unit 912, and an elevation control unit 913. Here, the attitude control unit 3911 controls not only the attitude of the head 33H but also the attitude of the stage 315 by outputting control signals to the θ-direction drive unit 37, the piezo actuator 333, and the piezo actuator 3316 of the stage unit 3031 via the interface. The horizontal movement control unit 912 controls the horizontal movement operation of the stage 315 by outputting control signals to the X-direction drive unit 321 and the Y-direction drive unit 323 via the interface. The elevation control unit 913 controls the elevation operation of the head 33H by outputting control signals to the Z-direction drive unit 34 via the interface.

[0101] The auxiliary storage unit also has a parameter storage unit 931 that stores parameter information indicating parameters reflecting the attitude of the stage 315 when the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD are parallel with each other in a state in which the dummy chip CPD is held by the head 33H. Here, the parameters indicate, for example, the length of the piezoelectric element of each of the plurality of piezo actuators 3316 that hold the stage 315. As described in the embodiment with reference to FIG. 18 , the parameter storage unit 931 stores parameter information indicating parameters of the piezo actuators 3316 in each of a plurality of pre-defined sub-areas SA1, SA2, ..., SA45 inside the area A1 in which the substrate WT is held on the holding surface 315f of the stage 315. 19 。 Next, the posture control unit 3911 controls the plurality of piezo actuators 3316 to adjust the posture of the stage 315 so that the dummy chip CPD is parallel to the holding surface of the stage 315. Then, the posture control unit 3911 stores, in the parameter storage unit 931, parameter information indicating parameters reflecting the posture of the stage 315 in a state where the posture of the stage 315 has been adjusted, in association with the region identification information identifying the corresponding subregion. Then, the posture control unit 3911 repeatedly performs these processes for all of the plurality of subregions SA1, SA2, ..., SA45.

[0102] Furthermore, the chip bonding apparatus according to this modification first performs a parallel adjustment step in which, with the dummy chips CPD held by the head 33H, parameters indicating the attitude of the stage 315 corresponding to each of the plurality of sub-regions on the stage 315 are acquired and stored in a parameter storage unit. Thereafter, the chip bonding apparatus sequentially bonds the chips CP to the substrate WT while adjusting the attitude of the stage 315 for each of the planned chip bonding regions facing each of the plurality of sub-regions using the parameters stored in the parameter storage unit.

[0103] Here, the attitude adjustment process performed by the chip bonding apparatus according to this modification will be described in detail with reference to FIG. 33 . Note that processes similar to those described in the embodiment are denoted by the same reference numerals as in FIG. 23 . First, with the dummy chip CPD held by the head 33H, the chip bonding apparatus moves the stage 315 to a position where one of the multiple subregions on the stage 315 faces the head 33H (step S201). Next, the chip bonding apparatus uses the laser sensor 51 to measure the distance between the portions of the reflecting surface CPDf of the dummy chip CPD corresponding to the three regions TEG1, TEG2, and TEG3 and the holding surface 315f on the −Z direction side of the stage 315 (step S202). Next, the chip bonding apparatus 30 adjusts the attitude of the stage 315 by controlling the degree of expansion and contraction of each of the multiple piezo actuators 3316 of the stage unit 3031 so that the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD are parallel (step S3201). Thereafter, the chip bonding device acquires the parameters of each of the plurality of piezo actuators 3316 in a state in which the posture of the stage 315 has been adjusted, and stores the parameter information indicating the acquired parameters in the parameter storage unit 931 in association with the corresponding region identification information (step S3202). Next, the chip bonding device executes the series of processes from step S205 onwards described in the embodiment.

[0104] Incidentally, when the attitude of the head 33H is adjusted as described in the embodiment, the attitude of the chip CP tilts accordingly with respect to the optical axis of the imaging units 35a and 35b. In this case, the reflected light from the chip CP may change, affecting the captured image. In this case, as in the present configuration, by changing the attitude of the stage 315 and maintaining a constant attitude of the head 33H, the attitude of the chip CP can be maintained constant with respect to the optical axis of the imaging units 35a and 35b.

[0105] 34 , instead of the piezo actuator 3316. This lifting mechanism 4316 has a plurality of roller units 4317 disposed at a plurality of locations on the periphery of the stage 315, a lifting unit 4318 that raises and lowers each of the plurality of roller units 4317, and a guide member 4319 that guides the stage 315 so that it moves in the vertical direction. The roller unit 4317 has an arm 43172 that extends in the −Z direction from the periphery of the stage 315, and a roller 43171 that is rotatably held at the tip of the arm 43172. The lifting unit 4318 has a wedge-shaped transmission member 43181 having an inclined surface 43181a formed thereon with which the roller 43171 abuts vertically upward, and a servo motor 43182 fixed to a base member 43183 and sliding the transmission member 43181 in the direction indicated by arrow AR401 along the vertical upper surface 43183a of the base member 43183. When the transmission member 43181 is slid in the direction indicated by arrow AR401 by the servo motor 43182, the roller 43171 rolls on the inclined surface 43181a of the transmission member 43181 as indicated by arrow AR402. This causes the stage 315 to rise and fall as indicated by arrow AR403.

[0106] 35, for example, the imaging units 35a, 35b and the mirror 337 may be arranged on the side of the stage 315 opposite to the head 33H side. In this case, the imaging units 35a, 35b are cameras that use infrared light and capture images of the alignment marks using light that passes through the temporary substrate WTD and is reflected by the chips CP. In this case, the imaging units 35a, 35b simultaneously capture images of the alignment marks MC1a, MC1b and the alignment marks MWD1a, MWD1b, for example, in a state where the alignment marks MC1a, MC1b of the chips CP and the alignment marks MWD1a, MWD1b of the temporary substrate WTD are spaced apart by a predetermined distance that falls within the depth of field of the imaging units 35a, 35b.

[0107] In an embodiment, the bonding system may be equipped with a pre-alignment device that performs a rough alignment operation of the temporary substrate WTD while recognizing alignment marks MK1a, MK1b, MK2a, and MK2b provided on the temporary substrate WTD before transporting the temporary substrate WTD to the chip bonding device 30.

[0108] In an embodiment, the temporary substrate WTD may have, on one surface in the thickness direction thereof, a plurality of hydrophilic regions on which chips CP are to be placed, and a hydrophobic region surrounding the plurality of hydrophilic regions. In this case, it is preferable that the surface of the chip CP that is temporarily fixed to the temporary substrate WTD is also hydrophilic. Here, the planar shape of the hydrophilic region is set to be substantially the same as the planar shape of the chip CP. As a result, when the chip CP is placed with water droplets adhering to the hydrophilic regions, the attitude and position of the chip CP are determined by the self-alignment effect. In this case, water is first applied to one surface of the temporary substrate WTD, so that water droplets are only attached to the hydrophilic regions. Next, multiple chips CP are placed on one surface of the temporary substrate WTD, and the temporary substrate WTD is rocked, thereby utilizing the self-alignment effect of the water droplets adhering to the hydrophilic regions to position the chips CP placed on the temporary substrate WTD in the hydrophilic regions. Then, with the chips CP arranged in the hydrophilic regions of the temporary substrate WTD, the temporary substrate WTD may be brought close to the substrate W1 to bond each chip CP to the substrate W1. Here, to obtain the self-alignment effect, it is necessary to adhere a sufficient amount of water droplets to the hydrophilic regions to allow the chips CP to change their posture. Therefore, if the temporary substrate WTD is brought close to the substrate W1 in this state, there is a risk that the posture of the chips CP will shift. Therefore, it is preferable to perform a heat treatment to remove excess moisture while multiple chips CP are temporarily fixed to the temporary substrate WTD, thereby temporarily fixing the chips CP to the temporary substrate WTD relatively firmly.

[0109] This configuration eliminates the need to temporarily bond multiple chips CP to the temporary substrate WTD one by one as in the temporary bonding process described in the embodiment, and allows multiple chips CP to be temporarily fixed to the temporary substrate WTD in a single process, thereby shortening the takt time and improving processing efficiency.

[0110] In the embodiment, an example has been described in which, when the temporary substrate WTD to which multiple chips CP are temporarily bonded is bonded to the substrate W1, the temporary substrate WTD is bent so that the central portion of the temporary substrate WTD protrudes toward the substrate W1 compared to the peripheral portion before being brought into contact with the substrate W1. However, the present invention is not limited to this, and the temporary substrate WTD may be brought into contact with the substrate W1 without being bent.

[0111] In the temporary substrate peeling step of peeling the temporary substrate WTD from the chips CP in the embodiment, the temporary substrate WTD to which the chips CP are temporarily bonded may be exposed to an environment in which a water molecule concentration equal to or greater than a predetermined concentration is present, and the chips CP may be peeled from the temporary substrate WTD in this state. Here, the concentration is preferably 70% or more, more preferably 80% or more, or more preferably 90% or more.

[0112] Incidentally, when water molecules are supplied to the interface bonded by hydrophilic bonding, the bonds in the hydrophilic bonding are broken, resulting in a decrease in bonding strength. Therefore, in this modified example, this phenomenon is utilized to weaken the bonding strength of the chip CP to the temporary substrate WTD when peeling the temporary substrate WTD from the substrate W1 by ejecting a moisture-rich gas between the chip CP and the temporary substrate WTD, increasing the humidity between the temporary substrate WTD and the chip CP by lowering the temperature of the temporary substrate WTD or the chip CP, or supplying water between the chip CP and the temporary substrate WTD. Therefore, applying hydrophilic bonding to the temporary bonding of the chip CP to the temporary substrate WTD makes it possible to easily adjust the bonding strength of the chip CP to the temporary substrate WTD and also makes it easier to peel the temporary substrate WTD from the chip CP. For this reason, the method of temporarily bonding the chip CP to the temporary substrate WTD by hydrophilic bonding is a very effective method.

[0113] In the embodiment, an example in which the parallelism adjustment step is performed using a dummy chip CPD has been described, but the present invention is not limited to this. For example, the parallelism adjustment step may be performed using a normal chip CP instead of the dummy chip CPD. Alternatively, if a flat reflective surface is formed at the tip of the head 33H, the parallelism adjustment step may be performed without holding a dummy chip CPD, a normal chip CP, or the like on the head 33H. Furthermore, in the embodiment, an example in which the parallelism adjustment step is performed without holding a substrate WT on the stage 315 has been described, but the present invention is not limited to this, and the parallelism adjustment step may be performed with a transparent substrate WT held on the stage 315.

[0114] In the embodiment, an example has been described in which the distance between the surface on the −Z direction side of the stage 315 and the surface on the +Z direction side of the chip CP is measured by the laser sensor 51 arranged on the +Z direction side of the stage 315. However, this is not limiting, and if at least one of the stage 315 and the temporary substrate WTD held by the stage 315 is not transparent, the distance between the surface on the −Z direction side of the stage 315 or the temporary substrate WTD and the laser sensor and the distance between the surface on the +Z direction side of the chip CP and the laser sensor may be measured separately to estimate the distance between the surface on the −Z direction side of the stage 315 or the temporary substrate WTD and the surface on the +Z direction side of the chip CP. In this case, the chip bonding device may have an optical path conversion member having a prism, mirror, or the like that can be arranged between the stage 315 and the head 33H, and a laser sensor 51 arranged to the side of the optical path conversion member, and may separately measure the distance from the -Z direction surface of the stage 315 or the -Z direction surface of the temporary substrate WTD held on the stage 315 to the laser sensor via the optical path conversion member, and the distance from the +Z direction surface of the chip CP to the laser sensor via the optical path conversion member, to estimate the distance between the -Z direction surface of the stage 315 or the temporary substrate WTD and the +Z direction surface of the chip CP. Also, as shown in FIG. 36 , the optical path conversion member 5052 may be provided with a transparent reflective surface 5052a facing the stage 315 and a transparent reflective surface 5052b facing the head 33H. In this case, the chip bonding device can use the laser sensor 5051 to separately measure the distance between the -Z direction surface of the stage 315 or the -Z direction surface of the temporary substrate WTD held on the stage 315 and the reflecting surface 5052a of the optical path conversion member 5052, and the distance between the +Z direction surface of the chip CP and the reflecting surface 5052b.

[0115] Alternatively, the chip bonding device may have a laser sensor provided on head 33H and a laser sensor provided on stage 315, and may use the laser sensor provided on head 33H to measure the distance between the surface on the -Z direction side of stage 315 or temporary substrate WTD and the laser sensor, and use the laser sensor provided on stage 315 to measure the distance between the surface on the +Z direction side of chip CP and the laser sensor, thereby estimating the distance between the surface on the -Z direction side of stage 315 or temporary substrate WTD and the surface on the +Z direction side of chip CP.

[0116] In the embodiment, an example has been described in which the chip bonding device 30 temporarily bonds the chip CP to the temporary substrate WTD from the vertically lower side of the temporary substrate WTD, i.e., from the -Z direction side. However, this is not limiting, and the chip bonding device may temporarily bond the chip CP to the temporary substrate WTD from the vertically upper side of the temporary substrate WTD, i.e., from the +Z direction side.

[0117] In the embodiment, the main bonding method between the substrate W1 and at least one chip CP temporarily bonded to the temporary substrate WTD may be so-called hydrophilic bonding. Alternatively, a bonding method using solder or the like may be employed. Here, when the main bonding is hydrophilic bonding, the substrate W1 to which the chip CP is permanently bonded may be subjected to a heat treatment. Here, the bonding strength of the chip CP to the substrate W1 can be controlled by appropriately adjusting the heat treatment conditions. For example, by performing a heat treatment at 200°C for two hours, the bonding strength of the chip CP to the substrate W1 can be increased. Here, by differentiating the activation conditions for activating the bonding surfaces of the temporary substrate WTD and the substrate W1, the bonding strength between the substrate W1 and the chip CP can be increased while the temporary bonding strength between the temporary substrate WTD and the chip CP is relatively weak, even when the heat treatment is performed under the same conditions.

[0118] The present invention allows various embodiments and modifications without departing from the broad spirit and scope of the present invention. Furthermore, the above-described embodiments are intended to explain the present invention and do not limit the scope of the present invention. In other words, the scope of the present invention is defined by the claims, not the embodiments. Various modifications made within the scope of the claims and within the scope of the meaning of the invention equivalent thereto are considered to be within the scope of the present invention.

[0119] This application is based on Japanese Patent Application No. 2024-043360, filed on March 19, 2024. The entire specification, claims and drawings of Japanese Patent Application No. 2024-043360 are incorporated herein by reference.

[0120] The present invention is suitable for manufacturing, for example, CMOS image sensors, memories, computing elements, and MEMS.

[0121] 1: bonding system, 10: chip supply device, 20: substrate bonding device, 30: chip bonding device, 33: bonding unit, 33H, 2402: head, 34: Z-direction drive unit, 35a, 35b, 2501, 2502: imaging unit, 36, 2404: head drive unit, 37: θ-direction drive unit, 38: linear guide, 39: chip transport device, 51: laser sensor, 60: activation processing device, 70: transport device, 80: carry-in / out unit, 85: cleaning device, 90: control unit, 311: X-direction movement unit, 312, 314: opening, 313: Y-direction movement unit, 315, 2401: stage, 321: X-direction drive unit, 323: Y-direction drive unit, 331: Z-axis direction movement member, 332: first disk member, 333, 3316: piezo actuator, 334: second Disk member, 334a, 334b: holes, 336: mirror fixing member, 337: mirror, 337a, 337b: inclined surfaces, 351a, 351b: image sensors, 352a, 352b: optical systems, 361: rotating member, 363: camera Z direction drive unit, 365: camera F direction drive unit, 411: tip tool, 411a: suction groove, 411b: through hole, 411c: communication path , 413b: pressing unit, 413c: pressing unit drive unit, 413d: suction unit, 413: head main body unit, 415, 416: hollow unit, 911, 3911: attitude adjustment unit, 912: horizontal movement control unit, 913: elevation control unit, 931: parameter storage unit, CPf, WTf: bonding surface, GAa, GAb: photographed image, MC1a, MC1b, MWD1a, MWD1b: alignment mark

Claims

1. A first hydrophilization step involves attaching water molecules to at least one of the temporary bonding surfaces on a temporary substrate to which at least one first chip is temporarily bonded, and the side of the at least one first chip opposite to the bonding surface side that is bonded to the substrate, thereby making the other side hydrophilic. After the first hydrophilization step, a first temporary bonding step is performed in which the side of the at least one first chip opposite to the bonding surface side is temporarily bonded to the temporary bonding surface of the temporary substrate, After the first temporary bonding step, the temporary substrate is brought relatively close to the substrate with the temporary bonding surface facing the substrate, thereby bonding the at least one first chip to the substrate in a first main bonding step, The process includes a first temporary substrate peeling step, in which, while maintaining the state in which the at least one first chip is bonded to the substrate, a biasing force is applied to the temporary substrate in a direction that causes it to peel away from the at least one first chip, thereby peeling the temporary substrate away from the at least one first chip. Joining method.

2. In the first temporary joining step described above, With the first chip bent such that the central portion of the first chip on the substrate side protrudes toward the temporary substrate side compared to the peripheral portion, the bonding surface of at least one first chip temporarily bonded to the central portion of the first chip on the temporary substrate side is brought into contact with the bonding surface of the substrate, and then the distance between the temporary substrate and the first chip is reduced so that the peripheral portion of the first chip comes into contact with the peripheral portion of the temporary substrate. The joining method according to claim 1.

3. The first chip is provided with at least one first alignment mark, The temporary substrate is provided with at least one second alignment mark corresponding to the at least one first alignment mark, In the first temporary joining step described above, With the at least one first alignment mark and the at least one second alignment mark separated by a predetermined first distance such that they are within the depth of field of the imaging unit, the imaging unit simultaneously images the at least one first alignment mark and the second alignment marks corresponding to each of the at least one first alignment marks. With the first chip and the temporary substrate separated by the first distance, the relative positional displacement between the first chip and the temporary substrate is calculated from the images of the at least one first alignment mark and the at least one second alignment mark captured by the imaging unit. Based on the calculated displacement amount, the first chip is moved relative to the temporary substrate in a direction parallel to the bonding surface and decreasing the displacement amount, thereby correcting the relative position of the first chip with respect to the temporary substrate, and then the first chip and the temporary substrate are temporarily bonded together. The joining method according to claim 1 or 2.

4. The first chip is provided with a plurality of first alignment marks, The temporary substrate is provided with a plurality of second alignment marks corresponding to the plurality of first alignment marks. In the first temporary joining step described above, With the plurality of first alignment marks and the plurality of second alignment marks separated by a predetermined first distance such that they are within the depth of field range of the imaging unit, the imaging unit simultaneously images the plurality of first alignment marks and the plurality of second alignment marks. With the first chip and the temporary substrate separated by the first distance, the relative positional displacement between the first chip and the temporary substrate is calculated from the images of the plurality of first alignment marks and the plurality of second alignment marks captured by the imaging unit. Based on the calculated displacement amount, the first chip is moved relative to the temporary substrate in a direction parallel to the bonding surface and decreasing the displacement amount, thereby correcting the relative position of the first chip with respect to the temporary substrate, and then the first chip and the temporary substrate are temporarily bonded together. The joining method according to claim 1 or 2.

5. In the first bonding process described above, With the temporary substrate bent so that the central portion of the temporary substrate on the substrate side protrudes toward the substrate side compared to the peripheral portion, the bonding surface of the at least one first chip temporarily bonded to the central portion of the temporary substrate on the substrate side is brought into contact with the bonding surface of the substrate, and then the distance between the temporary substrate and the substrate is reduced so that the peripheral portion of the temporary substrate comes into contact with the peripheral portion of the substrate. The joining method according to claim 1 or 2.

6. The aforementioned temporary substrate is provided with a plurality of third alignment marks. The substrate is provided with a plurality of fourth alignment marks corresponding to the plurality of third alignment marks, In the first bonding process described above, With the plurality of third alignment marks and the plurality of fourth alignment marks separated by a predetermined first distance such that they are within the depth of field range of the imaging unit, the plurality of third alignment marks and the plurality of fourth alignment marks are simultaneously imaged by the imaging unit. With the temporary substrate and the substrate separated by the first distance, the relative positional displacement between the temporary substrate and the substrate is calculated from the images of the plurality of third alignment marks and the plurality of fourth alignment marks captured by the imaging unit. Based on the calculated displacement amount, the temporary substrate is moved relative to the substrate in a direction parallel to the bonding surface and that reduces the displacement amount, thereby correcting the relative position of the temporary substrate to the substrate, and then the temporary substrate and the substrate are temporarily bonded together. The joining method according to claim 1 or 2.

7. A second hydrophilization step involves making at least one of the following hydrophilic: a temporary bonding surface on a temporary substrate to which the same number of at least one second chips as the at least one first chip are temporarily bonded, and the side of the at least one second chip opposite to the bonding surface side to which it is bonded to the at least one first chip; After the second hydrophilization step, a second temporary bonding step is performed in which the side of at least one second chip opposite to the bonding surface side is temporarily bonded to the temporary bonding surface of the temporary substrate, After the second temporary bonding step, the temporary bonding surface side of the temporary substrate is brought facing the substrate to which the at least one first chip is bonded, and the temporary substrate is brought closer to the at least one first chip bonded to the substrate, thereby bringing the bonding surface of the at least one second chip into contact with the at least one first chip bonded to the substrate, thereby bonding the at least one second chip to the at least one first chip, in a second main bonding step, The process includes a second temporary substrate peeling step, in which the temporary substrate is peeled off from the at least one second chip while maintaining the state in which the at least one second chip is temporarily bonded to the at least one first chip, The joining method according to claim 1 or 2.

8. The at least one second chip bonded to the at least one first chip is used as the at least one first chip, and the second hydrophilization step, the second temporary bonding step, the second permanent bonding step, and the second temporary substrate peeling step are repeated to stack a plurality of chips. The joining method according to claim 7.

9. Prior to the first hydrophilization step, the process further includes a first activation treatment step of activating at least one of the bonding surfaces of the at least one first chip and the temporary bonding surface of the temporary substrate, The joining method according to claim 1 or 2.

10. In the first activation process, at least one of the bonding surface of the at least one first chip and the temporary bonding surface of the temporary substrate is exposed to plasma or irradiated with a particle beam. The joining method according to claim 9.

11. The first temporary joining step is performed in the atmosphere. The first bonding process is carried out under reduced pressure. The joining method according to claim 1 or 2.

12. Prior to the first bonding step, the process further includes a second activation step in which at least one of the bonding surfaces of the at least one first chip and the bonding surface of the substrate is activated under reduced pressure. The joining method according to claim 9.

13. In the second activation process, at least one of the bonding surface of the at least one first chip and the temporary bonding surface of the temporary substrate is exposed to plasma or irradiated with a particle beam. The joining method according to claim 12.

14. A first hydrophilization step of making at least one of the temporary bonding surface on a temporary substrate to which at least one first chip is temporarily bonded, and the side of the at least one first chip opposite to the bonding surface side to which it is bonded to the substrate, After the first hydrophilization step, a first temporary bonding step is performed in which the side of the at least one first chip opposite to the bonding surface side is temporarily bonded to the temporary bonding surface of the temporary substrate, After the first temporary bonding step, the temporary substrate is brought relatively close to the substrate with the temporary bonding surface facing the substrate, thereby bonding the at least one first chip to the substrate in a first main bonding step, The process includes a first temporary substrate peeling step of peeling the temporary substrate from the at least one first chip while maintaining the state in which the at least one first chip is bonded to the substrate, In the first temporary substrate peeling step, the temporary substrate on which the at least one first chip is temporarily bonded is exposed to an environment in which water molecules are present at or above a predetermined concentration, and the at least one first chip is peeled off from the temporary substrate. Joining method.

15. A first hydrophilization step of making at least one of the temporary bonding surface on a temporary substrate to which at least one first chip is temporarily bonded, and the side of the at least one first chip opposite to the bonding surface side to which it is bonded to the substrate, After the first hydrophilization step, a first temporary bonding step is performed in which the side of the at least one first chip opposite to the bonding surface side is temporarily bonded to the temporary bonding surface of the temporary substrate, After the first temporary bonding step, the temporary substrate is brought relatively close to the substrate with the temporary bonding surface facing the substrate, thereby bonding the at least one first chip to the substrate in a first main bonding step, The process includes a first temporary substrate peeling step of peeling the temporary substrate from the at least one first chip while maintaining the state in which the at least one first chip is bonded to the substrate, In the first hydrophilization step, the hydrophilization treatment is performed to weaken the bonding strength when the at least one first chip is temporarily bonded to the temporary substrate in the first temporary bonding step. Joining method.

16. The bonding surface of each of the at least one first chip has multiple regions formed from each of multiple types of materials. The joining method according to claim 1 or 2.

17. A first hydrophilization step of making at least one of the temporary bonding surface on a temporary substrate to which at least one first chip is temporarily bonded, and the side of the at least one first chip opposite to the bonding surface side to which it is bonded to the substrate, After the first hydrophilization step, a first temporary bonding step is performed in which the side of the at least one first chip opposite to the bonding surface side is temporarily bonded to the temporary bonding surface of the temporary substrate, After the first temporary bonding step, the temporary substrate is brought relatively close to the substrate with the temporary bonding surface facing the substrate, thereby bonding the at least one first chip to the substrate in a first main bonding step, A first temporary substrate peeling step in which the temporary substrate is peeled off from the at least one first chip while maintaining the state in which the at least one first chip is bonded to the substrate, With one of the at least one first chip or dummy chip held by the head, one of a plurality of pre-set sub-regions inside the substrate holding area on the holding surface of the stage that holds the temporary substrate, or a plurality of pre-set sub-regions on the temporary bonding surface of the temporary substrate held by the stage, is positioned to face the stage-side surface of the first chip, and the orientation of at least one of the head and the stage is adjusted so that the stage-side surface of the first chip or dummy chip is parallel to the holding surface, or a reflective surface is formed at the tip of the head, and the temporary substrate is positioned on the holding surface of the stage that holds the temporary substrate The parallel adjustment step includes arranging one of a plurality of pre-set sub-regions inside the substrate holding region in which the substrate is held, or a plurality of pre-set sub-regions on the temporary bonding surface of the temporary substrate held on the stage, so that the sub-regions face the reflective surface of the head, adjusting the orientation of at least one of the head and the stage so that the reflective surface is parallel to the holding surface, and storing parameter information in the parameter storage unit in association with the parameter information that reflects the orientation of at least one of the head and the stage in the adjusted state, and region identification information corresponding to the chip bonding planned region, and repeating this for all of the plurality of sub-regions. In the first temporary bonding step, after the parallel adjustment step, one of the at least one first chip is held by the head and positioned in a location corresponding to one of the plurality of sub-regions on the temporary substrate. Then, based on parameter information corresponding to the region identification information of the sub-region facing the one first chip, which is stored in the parameter storage unit, the orientation of at least one of the head and the stage is adjusted. After that, the head is brought closer to the temporary substrate to temporarily bond the one first chip held by the head to the temporary substrate. Joining method.

18. In the parallel adjustment step, a laser beam is used to measure the distance between the holding surface and a plurality of predetermined locations on the first chip or the dummy chip, and the orientation of the head is adjusted based on the measured distance. The joining method according to claim 17.

19. The temporary bonding surface of the temporary substrate has a plurality of hydrophilic regions and a hydrophobic region surrounding the plurality of hydrophilic regions. In the first hydrophilization step, after placing the multiple first chips on the temporary bonding surface with water attached to the multiple hydrophilic regions, the first chips are temporarily fixed to each of the multiple hydrophilic regions by utilizing the self-alignment effect of each of the multiple first chips. The joining method according to claim 1.

20. A bonding method for bonding multiple chips to a substrate, With the chip held by the head, one of a plurality of preset sub-regions inside the substrate holding area on the holding surface of the stage that holds the substrate, or a plurality of preset sub-regions on the bonding surface of the substrate held by the stage to which the chip is bonded, is positioned so that the chip faces the stage side, and the orientation of at least one of the head and the stage is adjusted so that the stage side of the chip is parallel to the holding surface, or a reflective surface is formed at the tip of the head, and a plurality of preset sub-regions inside the substrate holding area on the holding surface of the stage that holds the substrate A parallel adjustment step is performed for all of the multiple sub-regions, which involves positioning one of the multiple sub-regions, or a set of multiple sub-regions on the bonding surface of the substrate held on the stage, so that it faces the reflective surface of the head, adjusting the orientation of at least one of the head and the stage so that the reflective surface is parallel to the holding surface, and storing parameter information in the parameter storage unit, which is associated with the parameter information that reflects the orientation of at least one of the head and the stage in the adjusted state, and region identification information that corresponds to the chip bonding area. The process includes, after the parallel adjustment step, positioning one of the plurality of chips in the head so as to face one of the plurality of sub-regions on the substrate, adjusting the orientation of at least one of the head and the stage based on parameter information corresponding to the region identification information of the sub-region facing the chip, which is stored in the parameter storage unit, and then bonding the one chip held by the head to the substrate by bringing the head closer to the substrate. Joining method.

21. The chip is provided with at least one first alignment mark, The substrate is provided with at least one second alignment mark corresponding to the at least one first alignment mark, In the aforementioned joining process, With the at least one first alignment mark and the at least one second alignment mark separated by a predetermined first distance such that they are within the depth of field of the imaging unit, the imaging unit simultaneously images the at least one first alignment mark and the second alignment marks corresponding to each of the at least one first alignment marks. With the chip and the substrate separated by the first distance, the relative positional displacement between the chip and the substrate is calculated from the images of the at least one first alignment mark and the at least one second alignment mark captured by the imaging unit. Based on the calculated displacement amount, the relative position of the chip with respect to the substrate is corrected by moving the chip relative to the substrate in a direction parallel to the bonding surface and in a direction that reduces the displacement amount, and then the chip and the substrate are bonded together. The joining method according to claim 20.

22. The chip is provided with a plurality of first alignment marks, The substrate is provided with a plurality of second alignment marks corresponding to the plurality of first alignment marks, In the aforementioned joining process, With the plurality of first alignment marks and the plurality of second alignment marks separated by a predetermined first distance such that they are within the depth of field range of the imaging unit, the imaging unit simultaneously images the plurality of first alignment marks and the plurality of second alignment marks. With the chip and the substrate separated by the first distance, the relative positional displacement between the chip and the substrate is calculated from the images of the plurality of first alignment marks and the plurality of second alignment marks captured by the imaging unit. Based on the calculated displacement amount, the relative position of the chip with respect to the substrate is corrected by moving the chip relative to the substrate in a direction parallel to the bonding surface and decreasing the displacement amount, and then the chip and the substrate are temporarily bonded. The joining method according to claim 20.

23. An activation apparatus that performs a first activation process to activate the temporary bonding surface on which at least one first chip on a temporary substrate is temporarily bonded, and a second activation process to activate the side of the at least one first chip opposite to the bonding surface side that is bonded to the substrate, A chip bonding apparatus that, after a first hydrophilization treatment step of making at least one of the temporary bonding surface and the side of the at least one first chip opposite to the bonding surface side that is bonded to the substrate hydrophilic by attaching water molecules to at least one of the two sides, A substrate bonding apparatus comprising: a first temporary bonding step of temporarily bonding the side of at least one first chip opposite to the bonding surface side of the temporary substrate to the temporary bonding surface of the temporary substrate; and a substrate bonding apparatus that, with the temporary bonding surface side of the temporary substrate facing the substrate, brings the temporary substrate closer to the substrate and brings the bonding surface of at least one first chip into contact with the bonding surface of the substrate, thereby bonding the at least one first chip to the substrate, The substrate bonding apparatus maintains the state in which the at least one first chip is bonded to the substrate, and applies a biasing force to the temporary substrate in a direction that biases it toward peeling away from the at least one first chip, thereby peeling the temporary substrate away from the at least one first chip. Joining system.

24. An activation apparatus that performs a first activation process to activate a temporary bonding surface on a temporary substrate to which at least one first chip is temporarily bonded, and a second activation process to activate the side of the at least one first chip opposite to the bonding surface side to which it is bonded to the substrate, A chip bonding apparatus that, after a first hydrophilization treatment step of making at least one of the temporary bonding surface and the side of the at least one first chip opposite to the bonding surface side that is bonded to the substrate hydrophilic, temporarily bonds the side of the at least one first chip opposite to the bonding surface side to the temporary bonding surface of the temporary substrate, A substrate bonding apparatus comprising: a first temporary bonding step of temporarily bonding the side of at least one first chip opposite to the bonding surface side of the temporary substrate to the temporary bonding surface of the temporary substrate; and a substrate bonding apparatus that, with the temporary bonding surface side of the temporary substrate facing the substrate, brings the temporary substrate closer to the substrate and brings the bonding surface of at least one first chip into contact with the bonding surface of the substrate, thereby bonding the at least one first chip to the substrate, The chip bonding apparatus is A stage for holding the substrate, A stage drive unit that moves the aforementioned stage in the horizontal direction, A head that holds one of the at least one first chip, A head drive unit for raising and lowering the head, The head has a plurality of piezo actuators for adjusting the posture of the head, Having a parameter storage unit, with one of the at least one first chip or dummy chip held by the head, one of a plurality of preset sub-regions inside the substrate holding area on the holding surface of the stage that holds the substrate is positioned opposite the stage-side face of the one first chip or dummy chip, and the orientation of at least one of the head and the stage is adjusted so that the stage-side face of the one first chip or dummy chip is parallel to the holding surface, or, with a reflective surface formed at the tip of the head, one of a plurality of preset sub-regions inside the substrate holding area on the holding surface of the stage that holds the temporary substrate, or a plurality of preset sub-regions on the temporary bonding surface of the temporary substrate held by the stage is positioned opposite the reflective surface of the head, and the orientation of at least one of the head and the stage is adjusted so that the reflective surface is parallel to the holding surface, A parallel adjustment step is performed for all of the plurality of sub-regions, which involves repeatedly storing parameter information in the parameter storage unit, in association with region identification information corresponding to the chip bonding area, a parameter information indicating a parameter reflecting the orientation of at least one of the head and the stage in a state in which the orientation of at least one of the head and the stage has been adjusted, for all of the plurality of sub-regions; and a bonding step is performed after the parallel adjustment step, in which, with one of the at least one first chip held by the head, it is positioned in a position corresponding to one of the plurality of sub-regions on the substrate, and then the orientation of at least one of the head and the stage is adjusted based on the parameter information corresponding to the region identification information of the sub-region facing the one first chip, which is stored in the parameter storage unit, and then the head is brought closer to the substrate to bond the one first chip held by the head to the substrate. The substrate bonding apparatus maintains the state in which the at least one first chip is bonded to the substrate, while peeling the temporary substrate from the at least one first chip. Joining system.

25. A stage for holding the substrate, A stage drive unit that moves the aforementioned stage in the horizontal direction, A head that holds one of several chips, A head drive unit for raising and lowering the head, Multiple piezo actuators for adjusting the posture of the head, Having a parameter storage unit, with the chip held by the head, one of a plurality of preset sub-regions inside the substrate holding area on the holding surface of the stage that holds the substrate is positioned to face the stage-side surface of the chip, and the orientation of at least one of the head and the stage is adjusted so that the stage-side surface of the chip is parallel to the holding surface, or a reflective surface is formed at the tip of the head, and one of a plurality of preset sub-regions inside the substrate holding area on the holding surface of the stage that holds the substrate, or a plurality of preset sub-regions on the bonding surface of the substrate held on the stage to which the chip is bonded is positioned to face the reflective surface of the head, and the orientation of at least one of the head and the stage is adjusted so that the reflective surface is parallel to the holding surface, and at least one of the head and the stage The device comprises a parallel adjustment step, in which parameter information indicating parameters reflecting the posture of at least one of the head and the stage in a posture-adjusted state is stored in the parameter storage unit in association with region identification information corresponding to the chip bonding area, and this process is repeated for all of the plurality of sub-regions; and a bonding step, in which, after the parallel adjustment step, one of the plurality of chips is held by the head and positioned in a location corresponding to one of the plurality of sub-regions on the substrate, and then the posture of at least one of the head and the stage is adjusted based on the parameter information corresponding to the region identification information of the sub-region facing the chip, stored in the parameter storage unit, and then the head is brought closer to the substrate to bond the one chip held by the head to the substrate, and a control unit that controls the stage drive unit, the head drive unit, and the plurality of piezo actuators to perform this bonding step. Joining system.