Semiconductor laser element and manufacturing method thereof
JPWO2025203491A5Active Publication Date: 2026-05-25MITSUBISHI ELECTRIC CORP
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Patent Information
- Application Number
- JP2026509685
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-03-28
- Filing Date
- 2024-03-28
- Publication Date
- 2026-05-25
- Estimated Expiration
- 2044-03-28
Abstract
A first-conductivity-type first cladding layer (2), an active layer (3), and a second-conductivity-type second cladding layer (4) are formed in such an order on a first-conductivity-type semiconductor substrate (1). A getter layer (5) made of an Al-based material is formed on the second cladding layer (4) without a gap.
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