Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device

JPWO2025220325A5Pending Publication Date: 2026-07-03
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Patent Information

Application Number
JP2026515419
Authority / Receiving Office
JP · JP
Patent Type
Applications
Filing Date
2025-08-06
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

Conventional silicon carbide semiconductor devices face issues with non-uniform formation of Ni silicide, leading to high contact resistance due to direct contact between the silicon carbide layer and barrier metal, which is exacerbated by the difficulty in performing sacrificial oxidation or hydrogen etching after forming an interlayer insulating film.

Method used

A silicon carbide semiconductor device with a Ti-containing barrier layer that does not contact the source region, and a manufacturing method involving heat treatment in an inert gas atmosphere at specific temperatures to form a uniform silicide layer, preventing direct contact between the silicon carbide layer and barrier metal.

Benefits of technology

The solution ensures uniform silicide layer formation, reducing contact resistance and eliminating direct contact between the silicon carbide layer and barrier metal, thereby improving the device's electrical performance.

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Abstract

The present invention provides a silicon carbide semiconductor device and a method for manufacturing a silicon carbide semiconductor device, with which it is possible to prevent uneven formation of Ni silicide and to reduce the contact resistance. In this method for manufacturing a silicon carbide semiconductor device, a silicide layer (18) is formed by: forming a film of Ni or a film of Ni and Ti; subjecting the film to a heat treatment at a temperature of 400°C or more and less than 600° C in an inert gas (group 18) atmosphere; removing the unreacted film; and subjecting the film to a heat treatment at a temperature of less than 1000°C in an inert gas (group 18) atmosphere.
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