Magnetic device

Abstract

Provided is a magnetic device capable of stable operation. A magnetic device according to an embodiment includes a first element, a first conductive member, a first magnetic member, and a first non-magnetic member. The first element includes a first magnetic layer, a second magnetic layer, and a first non-magnetic layer provided between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic layer to the second magnetic layer. The first conductive member includes first to third conductive portions. A second direction from the second conductive portion to the third conductive portion intersects the first direction. The first conductive portion is between the second conductive portion and the third conductive portion in the second direction. The first magnetic layer is provided between the first conductive portion and the second magnetic layer in the first direction. The first magnetic member includes a first magnetic portion. The first conductive portion is provided between the first magnetic portion and the first magnetic layer in the first direction. The first non-magnetic member includes a crystal. At least a portion of the first non-magnetic member is between the first magnetic portion and the first conductive portion in the first direction.

Description

magnetic devices

[0001] FIELD OF THE INVENTION Embodiments of the present invention relate to magnetic devices.

[0002] Magnetic devices including magnetic layers are used in a variety of applications, and stable operation is desired for the magnetic devices.

[0003] Patent No. 6545853

[0004] Embodiments of the present invention provide a magnetic device capable of stable operation.

[0005] A magnetic device according to the embodiment includes a first element, a first conductive member, a first magnetic member, and a first non-magnetic member. The first element includes a first magnetic layer, a second magnetic layer, and a first non-magnetic layer provided between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic layer to the second magnetic layer. The first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion. A second direction from the second conductive portion to the third conductive portion intersects the first direction. The first conductive portion is located between the second conductive portion and the third conductive portion in the second direction. The first magnetic layer is provided between the first conductive portion and the second magnetic layer in the first direction. The first magnetic member includes a first magnetic portion. The first conductive portion is provided between the first magnetic portion and the first magnetic layer in the first direction. The first non-magnetic member includes a crystal. At least a portion of the first non-magnetic member is located between the first magnetic portion and the first conductive portion in the first direction.

[0006] FIG. 1 is a schematic perspective view illustrating a magnetic device according to a first embodiment. FIGS. 2(a) and 2(b) are schematic cross-sectional views illustrating a magnetic device according to the first embodiment. FIGS. 3(a) and 3(b) are schematic cross-sectional views illustrating a magnetic device according to the first embodiment. FIGS. 4(a) and 4(b) are schematic cross-sectional views illustrating a magnetic device according to a second embodiment. FIGS. 5(a) to 5(c) are schematic cross-sectional views illustrating a magnetic device according to a third embodiment.

[0007] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc., are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions will be omitted as appropriate.

[0008] First Embodiment Fig. 1 is a schematic perspective view illustrating a magnetic device according to a first embodiment. Fig. 2(a) and Fig. 2(b) are schematic cross-sectional views illustrating the magnetic device according to the first embodiment. As shown in Fig. 1, the magnetic device according to the embodiment includes a first element 11E, a first conductive member 51, a first magnetic member 31, and a first non-magnetic member 41.

[0009] The first element 11E includes a first magnetic layer 11, a second magnetic layer 12, and a first non-magnetic layer 11 n. The first non-magnetic layer 11 n is provided between the first magnetic layer 11 and the second magnetic layer 12 in a first direction D1 from the first magnetic layer 11 to the second magnetic layer 12.

[0010] The first direction D1 is defined as the Z-axis direction. A direction perpendicular to the Z-axis direction is defined as the Y-axis direction. A direction perpendicular to the Z-axis direction and the Y-axis direction is defined as the X-axis direction.

[0011] The first conductive member 51 includes a first conductive portion 51 a, a second conductive portion 51 b, and a third conductive portion 51 c. A second direction D2 extending from the second conductive portion 51 b to the third conductive portion 51 c intersects with the first direction D1. The second direction D2 may be, for example, the Y-axis direction.

[0012] The first conductive portion 51a is located between the second conductive portion 51b and the third conductive portion 51c in the second direction D2. The first magnetic layer 11 is provided between the first conductive portion 51a and the second magnetic layer 12 in the first direction D1.

[0013] The first conductive member 51 may have a stripe shape extending along the second direction D2. For example, the length of the first conductive member 51 along the Y-axis direction is longer than the length (thickness) of the first conductive member 51 along the Z-axis direction. For example, the length of the first conductive member 51 along the Y-axis direction is longer than the length (width) of the first conductive member 51 along the X-axis direction.

[0014] The first magnetic member 31 includes a first magnetic portion 31a. The first conductive portion 51a is provided between the first magnetic portion 31a and the first magnetic layer 11 in the first direction D1. For example, the first conductive portion 51a is provided between the first magnetic portion 31a and the second magnetic layer 12. For example, the first magnetic layer 11 is provided between the first conductive portion 51a and the second magnetic layer 12.

[0015] The first non-magnetic member 41 includes a crystal. The first non-magnetic member 41 is, for example, a crystalline layer. At least a portion of the first non-magnetic member 41 is located between the first magnetic portion 31a and the first conductive portion 51a in the first direction D1.

[0016] With this configuration, the magnetization of the first magnetic layer 11 (first magnetic layer magnetization 11M) is stabilized, and the first magnetic layer magnetization 11M can be controlled with a small current.

[0017] 1, a current i1 is supplied between the second conductive portion 51b and the third conductive portion 51c. The electrical resistance between the first conductive member 51 and the second magnetic layer 12 changes depending on the direction of the current i1.

[0018] For example, the orientation of the first magnetic layer magnetization 11M changes depending on the direction of the current i1 flowing between the second conductive portion 51b and the third conductive portion 51c. As a result, the angle between the first magnetic layer magnetization 11M and the magnetization of the second magnetic layer 12 changes. The change in angle changes the electrical resistance. The current i1 for changing the electrical resistance corresponds to a write current. The first magnetic layer 11 corresponds to, for example, a switching layer. The second magnetic layer 12 corresponds to, for example, a reference layer. The change in the orientation of the first magnetic layer magnetization 11M depending on the direction of the current i1 may be based on, for example, SOT (Spin-Orbit Torque).

[0019] In the embodiment, the first magnetic layer 11 and the first magnetic portion 31a of the first magnetic member 31 interact with each other. This thermally stabilizes the first magnetic layer 11. Furthermore, the magnetization of the first magnetic member 31 is also controlled under the influence of the current i1 flowing through the first conductive member 51. The direction of the control of the magnetization of the first magnetic member 31 based on the current i1 is the same direction as the interaction between the first magnetic layer 11 and the first magnetic portion 31a. As a result, the magnetization of the first magnetic layer 11 (first magnetic layer magnetization 11M) can be controlled with a very small current i1 (small write current). According to the embodiment, a magnetic device capable of stable operation can be provided.

[0020] 2A and 2B, the first magnetic layer magnetization 11M of the first magnetic layer 11 includes a component in the third direction D3. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 may be, for example, the X-axis direction. The first magnetic portion magnetization 31aM of the first magnetic portion 31a includes a component in the third direction D3. The first magnetic portion magnetization 31aM may be antiparallel to the first magnetic layer magnetization 11M.

[0021] In the embodiment, the first non-magnetic member 41 includes a crystal. For example, the crystal characteristics of the first magnetic member 31 may be controlled by the influence of the crystal characteristics of the first non-magnetic member 41. The first non-magnetic member 41 may include a crystal formed by ionic bonding, for example.

[0022] In the embodiment, the first non-magnetic member 41 may contain MgO. The good crystallinity of MgO allows the first magnetic member 31 to have good crystallinity.

[0023] The first magnetic member 31 may contain, for example, Co and Fe. The first magnetic member 31 may further contain B. The first magnetic member 31 may contain, for example, Co ｘ Fe １－ｘ Contains B.

[0024] The first magnetic member 31 is Co ｘ Fe １－ｘ When the first non-magnetic member 41 contains B and the second non-magnetic member 42 contains MgO, the difference in lattice length between the two materials causes Co ｘ Fe １－ｘStress is applied to B. This allows stable control of the magnetization of the first magnetic member 31 (e.g., the first magnetic partial magnetization 31aM). The stress based on the difference in lattice length is, for example, 100 MPa or more and 1000 MPa or less. For example, the inverse magnetostriction effect based on the difference in lattice length is likely to occur.

[0025] As shown in FIG. 2A, the thickness of the first non-magnetic member 41 along the first direction D1 is defined as a first non-magnetic member thickness t41. In this embodiment, the first non-magnetic member thickness t41 is preferably, for example, 0.2 nm or more and 2 nm or less. This makes it easier to obtain good crystallinity in the first magnetic member 31. This makes it easier to stably control the magnetization of the first magnetic member 31.

[0026] In the embodiment, the first conductive member 51 includes at least one selected from the group consisting of, for example, Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au. This makes it easier to control the magnetization of the first magnetic layer 11 due to an effect based on the current i1 flowing through the first conductive member 51. The effect based on the current i1 may include, for example, spin orbit torque.

[0027] In the embodiment, the thickness of the first conductive member 51 along the first direction D1 may be, for example, 2 nm to 15 nm. The thickness of the first magnetic layer 11 along the first direction D1 may be, for example, 0.7 nm to 5 nm. The thickness of the first non-magnetic layer 11n along the first direction D1 may be, for example, 0.8 nm to 2 nm. The thickness of the second magnetic layer 12 along the first direction D1 may be, for example, 1 nm to 6 nm.

[0028] In the embodiment, the first nonmagnetic layer 11n is made of, for example, MgO, CaO, SrO, TiO, VO, NbO, and Al. ２ O ３ The first element 11E includes at least one selected from the group consisting of: The first element 11E is, for example, a TMR (Tunnel Magneto Resistance) element.

[0029] In the embodiment, the first magnetic layer 11 may include, for example, Co, Fe, and B. The second magnetic layer 12 may include multiple stacked films. For example, the second magnetic layer 12 may include multiple magnetic films and multiple non-magnetic films. One of the multiple magnetic films is located between one of the multiple non-magnetic films and another of the multiple non-magnetic films. One of the multiple non-magnetic films is located between one of the multiple magnetic films and another of the multiple magnetic films. The second magnetic layer 12 may have, for example, an SAF (synthetic anti-ferromagnetic) structure. This makes it easier to obtain more stable magnetic properties in the second magnetic layer 12.

[0030] 1, the magnetic device 110 may include a conductive layer 12C. The second magnetic layer 12 is provided between the first non-magnetic layer 11n and the conductive layer 12C. The conductive layer 12C may be, for example, a cap layer. The conductive layer 12C may be, for example, an electrode layer.

[0031] 1 , the magnetic device 110 may include a base 81, an intermediate member 85, and an insulating member 82. The first magnetic member 31 is provided between the base 81 and the first non-magnetic member 41. The intermediate member 85 is provided between the base 81 and the first magnetic member 31. The base 81 may be, for example, an insulating substrate. The base 81 may include, for example, silicon oxide or silicon nitride. The intermediate member 85 may include, for example, Ta. The intermediate member 85 is, for example, an underlayer.

[0032] The first element 11E may be provided between a part of the insulating member 82 and another part of the insulating member 82 in the second direction D2 and the third direction D3.

[0033] 1 , the magnetic device 110 may be provided with a control unit 70. The control unit 70 may be included in the magnetic device 110. The control unit 70 may be provided separately from the magnetic device 110. The control unit 70 is configured to supply a current i1 to the first conductive member 51.

[0034] The control unit 70 may be configured to apply a voltage V1 to the second magnetic layer 12. The voltage V1 may control, for example, the ease with which the magnetization direction of the first magnetic layer 11 changes. The voltage V1 may be, for example, a voltage based on the potential of the first conductive member 51.

[0035] 2B, in this example, the first magnetic member 31 further includes a second magnetic portion 31b and a third magnetic portion 31c. The direction from the second magnetic portion 31b to the second conductive portion 51b is along the first direction D1. The direction from the third magnetic portion 31c to the third conductive portion 51c is along the first direction D1. The magnetization direction of the second magnetic portion 31b may be along the magnetization direction of the first magnetic portion 31a. The magnetization direction of the third magnetic portion 31c may be along the magnetization direction of the first magnetic portion 31a. As described below, the magnetization directions of these multiple magnetic portions may intersect with each other.

[0036] 3A and 3B are schematic cross-sectional views illustrating the magnetic device according to the first embodiment. As shown in FIG. 3B, in the magnetic device 111 according to the embodiment, the magnetization of the first magnetic member 31 varies depending on the location. Except for this, the configuration of the magnetic device 111 may be the same as the configuration of the magnetic device 110.

[0037] In the magnetic device 111, the direction from the first magnetic portion 31a to the first conductive portion 51a is along the first direction D1, the direction from the second magnetic portion 31b to the second conductive portion 51b is along the first direction D1, and the direction from the third magnetic portion 31c to the third conductive portion 51c is along the first direction D1.

[0038] For example, the first magnetic portion magnetization 31aM of the first magnetic portion 31a includes a component in the third direction D3. For example, the second magnetic portion magnetization 31bM of the second magnetic portion 31b includes a component in the second direction D2. The third magnetic portion magnetization 31cM of the third magnetic portion 31c includes a component in the second direction D2.

[0039] For example, the first magnetic layer magnetization 11M is along the third direction D3, the first magnetic portion magnetization 31aM is along the third direction D3, the second magnetic portion magnetization 31bM is along the second direction D2, and the third magnetic portion magnetization 31cM is along the second direction D2.

[0040] For example, in the portion overlapping with the first magnetic layer 11, the magnetization of the first magnetic member 31 is antiparallel to the magnetization of the first magnetic layer 11. In the region not overlapping with the first magnetic layer 11, the magnetization of the first magnetic member 31 is along the direction in which the first conductive member 51 extends (second direction D2). This makes it easier to obtain more stable magnetization in the first magnetic member 31.

[0041] 3B, the length of the transition region between the first magnetic portion 31a having magnetization along the third direction D3 and the second magnetic portion 31b having magnetization along the second direction D2 is defined as a first length d1. The length of the transition region between the first magnetic portion 31a having magnetization along the third direction D3 and the third magnetic portion 31c having magnetization along the second direction D2 is defined as a second length d2. Each of the first length d1 and the second length d2 may be, for example, 2 nm or more and 20 nm or less.

[0042] In the embodiment, the first magnetic portion 31a, the second magnetic portion 31b, and the third magnetic portion 31c may have different crystalline states, and the lattice lengths may be different from one another.

[0043] For example, the difference between the first lattice length L1 in the first magnetic portion 31a and the second lattice length L2 in the second magnetic portion 31b is defined as the first difference. The difference between the third lattice length L3 in the third magnetic portion 31c and the second lattice length L2 is defined as the second difference. For example, the first absolute value of the first difference is greater than the second absolute value of the second difference. For example, the second lattice length L2 is substantially the same as the third lattice length L3. Meanwhile, the first lattice length L1 is different from the second lattice length L2 and different from the third lattice length L3. Such a difference in lattice length may be due to, for example, a difference in stress caused by the presence or absence of the first element 11E. Such a difference in lattice length may be due to, for example, a difference in stress caused by the presence or absence of the insulating member 82. This stress difference is, for example, 100 MPa or more and 1000 MPa or less.

[0044] The first grating length L1, the second grating length L2, and the third grating length L3 may be lengths along a direction intersecting the first direction D1.

[0045] The difference in the magnetization direction among the first magnetic portion 31 a, the second magnetic portion 31 b, and the third magnetic portion 31 c may be controlled, for example, by the thickness of the first non-magnetic member 41. For example, the thickness of the first non-magnetic member 41 may be 0.3 nm or more and 0.8 nm or less in each of the region overlapping with the second magnetic portion 31 b in the first direction D1, the region overlapping with the third magnetic portion 31 c in the first direction D1, and the region overlapping with the first magnetic portion 31 a in the first direction D1. These thicknesses may be the same or different.

[0046] In one example, the planar size of the first element 11E may be approximately 50 nm × 50 nm. In this case, the magnetic device 110 has nonvolatility of, for example, 10 years or more. In this case, the magnetization of the first magnetic layer 11 may be controlled with a current of approximately 10 μA.

[0047] 4A and 4B are schematic cross-sectional views illustrating a magnetic device according to a second embodiment. As shown in FIGS. 4A and 4B, a magnetic device 112 according to the embodiment further includes a second non-magnetic member 42. The remaining configuration of the magnetic device 112 may be the same as that of the magnetic device 110 or the magnetic device 111.

[0048] In the magnetic device 112, the second non-magnetic member 42 includes a crystal. At least a portion of the second non-magnetic member 42 is located between the first conductive portion 51a and the first magnetic layer 11 in the first direction D1.

[0049] The second non-magnetic member 42, for example, applies an appropriate stress to the first magnetic layer 11. For example, the magnetization of the first magnetic layer 11 can be more stably controlled. For example, by providing the second non-magnetic member 42, the retention time related to the stability of the magnetization of the first magnetic layer 11 becomes about twice the retention time when the second non-magnetic member 42 is not provided.

[0050] For example, the second non-magnetic member 42 may contain MgO. The thickness of the second non-magnetic member 42 along the first direction D1 (second non-magnetic member thickness t42) may be, for example, not less than 0.3 nm and not more than 0.9 nm.

[0051] Third Embodiment FIGS. 5A to 5C are schematic cross-sectional views illustrating a magnetic device according to a third embodiment. FIG. 5A is a cross-sectional view of a region including a first conductive portion 51a. FIG. 5B is a cross-sectional view of a region including a second conductive portion 51b. FIG. 5C is a cross-sectional view of a region including a third conductive portion 51c. As shown in FIG. 5A, in a magnetic device 113 according to this embodiment, the top surface of the first conductive member 51 is curved upward in a convex shape. Except for this, the configuration of the magnetic device 113 may be similar to that of the magnetic device 110 or the magnetic device 111.

[0052] 5(a) to 5(c), the first conductive member 51 includes a first surface F1. A portion of the first surface F1 faces the first element 11E. For example, the first surface F1 includes a first portion Fa1 included in the first conductive portion 51a and a second portion Fb1 included in the second conductive portion 51b. The first surface F1 may further include a third portion Fc1 included in the third conductive portion 51c.

[0053] The first curvature when the first portion Fa1 is cut by a first plane (Z-X plane) intersecting the second direction D2 is higher than the second curvature when the second portion Fb1 is cut by the first plane. The first curvature when the first portion Fa1 is cut by the first plane is higher than the third curvature when the third portion Fc1 is cut by the first plane.

[0054] The first portion Fa1 is, for example, curved in a convex shape toward the first magnetic layer 11. On the other hand, the second portion Fb1 and the third portion Fc1 may be substantially planar. For example, such a difference in shape occurs due to stress. The stress may be, for example, not less than 100 MPa and not more than 1000 MPa. The first magnetic layer 11 may be curved in accordance with the curvature of the first portion Fa1. For example, the magnetization of the first magnetic layer 11 is stably controlled.

[0055] The embodiments may include the following technical solutions. (Technical Solution 1) A first element including a first magnetic layer, a second magnetic layer, and a first non-magnetic layer provided between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic layer to the second magnetic layer; a first conductive member, the first conductive member including a first conductive portion, a second conductive portion, and a third conductive portion, a second direction from the second conductive portion to the third conductive portion intersecting the first direction, the first conductive portion being between the second conductive portion and the third conductive portion in the second direction, and the first magnetic layer being provided between the first conductive portion and the second magnetic layer in the first direction; a first magnetic member including a first magnetic portion, the first conductive portion being provided between the first magnetic portion and the first magnetic layer in the first direction; and a first non-magnetic member including a crystal, at least a portion of the first non-magnetic member being between the first magnetic portion and the first conductive portion in the first direction. A magnetic device comprising:

[0056] (Technical Solution 2) The magnetic device according to Technical Solution 1, wherein the first non-magnetic member contains MgO.

[0057] (Technical Solution 3) The magnetic device according to Technical Solution 1 or 2, wherein the first magnetic member contains Co and Fe.

[0058] (Technical Solution 4) The magnetic device according to Technical Solution 3, wherein the first magnetic member further contains B.

[0059] (Technical proposal 5) A magnetic device described in any one of technical proposals 1 to 4, wherein the first magnetic layer magnetization of the first magnetic layer includes a component in a third direction, the first magnetic portion magnetization of the first magnetic portion includes a component in the third direction, and the third direction intersects with a plane containing the first direction and the second direction.

[0060] (Technical proposal 6) A magnetic device described in Technical proposal 5, wherein the first magnetic member further includes a second magnetic portion and a third magnetic portion, the direction from the second magnetic portion to the second conductive portion is along the first direction, and the direction from the third magnetic portion to the third conductive portion is along the first direction.

[0061] (Technical proposal 7) A magnetic device described in Technical proposal 6, wherein the second magnetic portion magnetization of the second magnetic portion includes a component in the second direction, and the third magnetic portion magnetization of the third magnetic portion includes a component in the second direction.

[0062] (Technical proposal 8) A magnetic device described in Technical proposal 7, wherein the first magnetic layer magnetization is along the third direction, the first magnetic partial magnetization is along the third direction, the second magnetic partial magnetization is along the second direction, and the third magnetic partial magnetization is along the second direction.

[0063] (Technical Solution 9) The magnetic device according to any one of Technical Solutions 5 to 8, wherein the first magnetic portion magnetization is antiparallel to the first magnetic layer magnetization.

[0064] (Technical Solution 10) A magnetic device described in any one of Technical Solutions 5 to 9, in which the direction of magnetization of the first magnetic layer changes depending on the direction of current flowing between the second conductive portion and the third conductive portion.

[0065] (Technical proposal 11) A magnetic device described in any one of Technical proposals 5 to 9, wherein the electrical resistance between the first conductive member and the second magnetic layer changes depending on the direction of the current flowing between the second conductive portion and the third conductive portion.

[0066] (Technical Solution 12) The magnetic device according to Technical Solution 10 or 11, further comprising a control unit, wherein the control unit is configured to supply the current to the first conductive member.

[0067] (Technical proposal 13) A magnetic device described in any one of Technical proposals 1 to 5, wherein the first magnetic member further includes a second magnetic portion and a third magnetic portion, the direction from the second magnetic portion to the second conductive portion is along the first direction, the direction from the third magnetic portion to the third conductive portion is along the first direction, and a first absolute value of a first difference between a first lattice length in the first magnetic portion and a second lattice length in the second magnetic portion is greater than a second absolute value of a second difference between the third lattice length in the third magnetic portion and the second lattice length.

[0068] (Technical Solution 14) The magnetic device according to Technical Solution 13, wherein the first lattice length, the second lattice length, and the third lattice length are lengths along a direction intersecting the first direction.

[0069] (Technical Solution 15) A magnetic device described in any one of Technical Solutions 1 to 14, further comprising a second non-magnetic member containing a crystal, wherein at least a portion of the second non-magnetic member is located between the first conductive portion and the first magnetic layer in the first direction.

[0070] (Technical Solution 16) The magnetic device according to Technical Solution 15, wherein the second non-magnetic member includes MgO.

[0071] (Technical Solution 17) The magnetic device according to Technical Solution 15 or 16, wherein the thickness of the second non-magnetic member along the first direction is 0.3 nm or more and 0.9 nm or less.

[0072] (Technical Solution 18) A magnetic device according to any one of Technical Solutions 1 to 17, wherein the thickness of the first non-magnetic member along the first direction is 0.2 nm or more and 2 nm or less.

[0073] (Technical proposal 19) The magnetic device according to any one of Technical proposals 1 to 18, wherein the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

[0074] (Technical proposal 20) A magnetic device described in any one of Technical proposals 1 to 19, wherein the first conductive member includes a first surface, a portion of the first surface faces the first element, the first surface includes a first portion included in the first conductive portion and a second portion included in the second conductive portion, and a first curvature when the first portion is cut by a first plane intersecting the second direction is higher than a second curvature when the second portion is cut by the first plane.

[0075] According to the embodiment, a magnetic device capable of stable operation can be provided.

[0076] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element included in the magnetic device, such as the element, magnetic layer, non-magnetic layer, conductive member, non-magnetic member, magnetic member, and insulating member, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0077] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0078] In addition, all magnetic devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the magnetic device described above as an embodiment of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0079] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0080] 11, 12: first and second magnetic layers, 11E: first element, 11M: first magnetic layer magnetization, 11n: first non-magnetic layer, 12C: conductive layer, 31: first magnetic member, 31a to 31c: first to third magnetic portions, 31aM to 31cM: first to third magnetic portion magnetization, 41, 42: first and second non-magnetic members, 51: first conductive member, 51a to 51c: first to third conductive portions, 70: control unit, 81: base, 82: insulating member, 85: intermediate member, 110 to 113: magnetic device, D1 to D3: first to third directions, F1: first surface, Fa1 to Fc1: first to third portions, V1: voltage, d1, d2: first and second lengths, i1: current, t41, t42: thicknesses of the first and second non-magnetic members

Claims

1. A first element including a first magnetic layer, a second magnetic layer, and a first non-magnetic layer provided between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic layer to the second magnetic layer; a first conductive member, the first conductive member including a first conductive portion, a second conductive portion, and a third conductive portion, a second direction from the second conductive portion to the third conductive portion intersecting the first direction, the first conductive portion being between the second conductive portion and the third conductive portion in the second direction, and the first magnetic layer being provided between the first conductive portion and the second magnetic layer in the first direction; a first magnetic member including a first magnetic portion, the first conductive portion being provided between the first magnetic portion and the first magnetic layer in the first direction; and a first non-magnetic member including a crystal, at least a portion of the first non-magnetic member being between the first magnetic portion and the first conductive portion in the first direction. A magnetic device comprising:

2. The magnetic device according to claim 1, wherein the first non-magnetic member includes MgO.

3. The magnetic device according to claim 1, wherein the first magnetic member includes Co and Fe.

4. The magnetic device according to claim 3, wherein the first magnetic member further contains B.

5. The magnetic device of claim 1, wherein the first magnetic layer magnetization of the first magnetic layer includes a component in a third direction, and the first magnetic portion magnetization of the first magnetic portion includes a component in the third direction, and the third direction intersects a plane containing the first direction and the second direction.

6. The magnetic device according to claim 5, wherein the first magnetic member further includes a second magnetic portion and a third magnetic portion, the direction from the second magnetic portion to the second conductive portion is along the first direction, and the direction from the third magnetic portion to the third conductive portion is along the first direction.

7. The magnetic device of claim 6, wherein the second magnetic portion magnetization of the second magnetic portion includes a component in the second direction, and the third magnetic portion magnetization of the third magnetic portion includes a component in the second direction.

8. The magnetic device of claim 7, wherein the first magnetic layer magnetization is along the third direction, the first magnetic portion magnetization is along the third direction, the second magnetic portion magnetization is along the second direction, and the third magnetic portion magnetization is along the second direction.

9. The magnetic device of claim 5, wherein the first magnetic portion magnetization is antiparallel to the first magnetic layer magnetization.

10. The magnetic device according to claim 5, wherein the direction of magnetization of said first magnetic layer changes depending on the direction of current flowing between said second conductive portion and said third conductive portion.

11. The magnetic device according to claim 5, wherein the electrical resistance between the first conductive member and the second magnetic layer changes depending on the direction of the current flowing between the second conductive portion and the third conductive portion.

12. The magnetic device of claim 10, further comprising a control unit, said control unit configured to supply said current to said first conductive member.

13. The magnetic device of claim 1, wherein the first magnetic member further includes a second magnetic portion and a third magnetic portion, the direction from the second magnetic portion to the second conductive portion is along the first direction, the direction from the third magnetic portion to the third conductive portion is along the first direction, and a first absolute value of a first difference between a first lattice length in the first magnetic portion and a second lattice length in the second magnetic portion is greater than a second absolute value of a second difference between the third lattice length in the third magnetic portion and the second lattice length.

14. The magnetic device according to claim 13, wherein the first lattice length, the second lattice length, and the third lattice length are lengths along a direction intersecting the first direction.

15. The magnetic device of claim 1, further comprising a second non-magnetic member including a crystal, wherein at least a portion of the second non-magnetic member is between the first conductive portion and the first magnetic layer in the first direction.

16. The magnetic device according to claim 15, wherein the second non-magnetic member includes MgO.

17. The magnetic device according to claim 15, wherein the thickness of the second non-magnetic member along the first direction is 0.3 nm or more and 0.9 nm or less.

18. The magnetic device according to claim 1, wherein the thickness of the first non-magnetic member along the first direction is 0.2 nm or more and 2 nm or less.

19. The magnetic device of claim 1, wherein the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

20. The magnetic device of claim 1, wherein the first conductive member includes a first surface, a portion of the first surface facing the first element, the first surface including a first portion included in the first conductive portion and a second portion included in the second conductive portion, and a first curvature when the first portion is cut by a first plane intersecting the second direction is higher than a second curvature when the second portion is cut by the first plane.