Probe for measuring core temperature, core temperature thermometer, and core temperature measuring method

Abstract

A probe 1 for measuring core temperature comprises: a first measurement set 110 including a first heat conduction path 115 inside a flat plate-shaped substrate 10 and including a substance having a first thermal conductivity, and a pair of temperature sensors 21, 22 mounted on the substrate, the pair of temperature sensors 21, 22 facing each other across the first heat conduction path 115; and a second measurement set 120A, 120B including a second heat conduction path 125A, 125B inside the substrate 10 and including a substance having a second thermal conductivity, and a pair of temperature sensors 23A, 24A, 23B, 24B mounted on the substrate, the pair of temperature sensors 23A, 24A, 23B, 24B facing each other across the second heat conduction path 125A, 125B. The probe 1 for measuring core temperature includes a plurality of second measurement sets 120, and the plurality of second measurement sets 120A, 120B,... are disposed so as to surround the first measurement set 110.

Description

Deep temperature measurement probe, deep temperature thermometer, and deep temperature measurement method

[0001] The present invention relates to a deep temperature measurement probe, a deep temperature thermometer, and a deep temperature measurement method used when measuring the deep temperature (core temperature) of a living body (subject) such as a human body.

[0002] The dual heat flow method, a non-invasive method for measuring the temperature deep inside the human body, has been studied. The dual heat flow method measures the heat flow through two different heat flow paths and solves simultaneous equations related to the heat flow to determine the deep temperature TB without knowing the unknown thermal resistance of the skin (thermal resistance Rs due to the tissue from the deep part to the surface of the subject).

[0003] Non-Patent Document 1 and Patent Document 1 disclose deep body temperature measurement probes for measuring deep body temperature TB using the dual heat flow method. These conventional deep body temperature measurement probes include a pair of temperature sensors arranged opposite each other across a first heat conduction path (first heat flow path) in a first region, and another pair of temperature sensors arranged opposite each other across a second heat conduction path (second heat flow path) in a second region, the second heat conduction path having a thermal resistance value different from that of the first heat conduction path.

[0004] In each region, one pair of temperature sensors is placed on the subject side to measure the temperature of the subject's surface (T1, T2), and the other temperature sensor is placed on the opposite side to the subject side to measure the temperature at the point where the heat flow emitted from the subject's surface passes through a predetermined heat conduction path (T3, T4). If the ratio K between the thermal resistance of the first conduction path and the thermal resistance of the second heat conduction path is known, the deep temperature can be measured (estimated) based on the temperatures (T1 to T4) measured by each temperature sensor (see Equation 10 in Patent Document 1).

[0005] Yanai, Kazunari, "Development of a Non-invasive Deep Body Thermometer and Its Verification in Basic Experiments," Master's Thesis, Graduate School of Information Science, Nara Institute of Science and Technology, NAIST Digital Library, 2014.

[0006] International Publication No. 2024 / 004375

[0007] The dual heat flow method measures the deep temperature TB under the assumption that the thermal resistance Rs of the tissue from deep under the subject's skin to the surface is the same directly under the first and second regions (see, for example, Figure 2.10 in Non-Patent Document 1). However, in reality, measurements are often performed under conditions where the thermal resistance Rs of the two regions differs. For example, the probe may be applied to locations with different subcutaneous structures directly under the first and second regions. Because the subcutaneous structures to the deep tissue directly under the two regions are different, the thermal resistance Rs to the deep tissue directly under the two regions also differs. Furthermore, depending on the force applied when applying the probe, the probe may be applied obliquely to the deep tissue of the subject, resulting in the thickness of the subcutaneous tissue from deep to the surface being different between the first and second regions. In this case, a difference in the thermal resistance Rs directly under the two regions also occurs. Furthermore, when the subject moves, the thickness of the tissue from the depths to the surface of the subject changes dynamically, and the degree of difference in thermal resistance Rs under the skin directly below both regions also changes.

[0008] If measurements are taken in a situation where the thermal resistance Rs under the skin of the living body directly below both areas is not the same, the assumption of the estimation formula for deep temperature TB, which assumes that the thermal resistance Rs are equal, will be violated, and ultimately the accuracy of the deep temperature estimation will decrease, making it impossible to know the deep temperature accurately.

[0009] The present invention has been made in view of the above-mentioned problems, and aims to provide a deep temperature measurement probe capable of measuring deep temperatures with higher accuracy than conventional methods. It also aims to provide a deep temperature thermometer and a deep temperature measurement method capable of measuring deep temperatures with higher accuracy than conventional methods.

[0010] [1] According to one aspect of the present invention, there is provided a deep temperature measurement probe for use in measuring the temperature of a deep part of a subject. The deep temperature measurement probe includes a first measurement set including a first heat conduction path formed of a material having a first thermal conductivity within a flat substrate and a pair of temperature sensors mounted on the substrate so as to face each other across the first heat conduction path, and a second measurement set including a second heat conduction path formed of a material having a second thermal conductivity within the substrate and a pair of temperature sensors mounted on the substrate so as to face each other across the second heat conduction path. In this case, the deep temperature measurement probe includes a plurality of second measurement sets, which are arranged to surround the position of the first measurement set.

[0011] [2] According to another aspect of the present invention, there is provided a deep body thermometer comprising the deep body temperature measurement probe according to [1] above and a deep body temperature estimation unit that estimates the deep body temperature of the subject using the temperatures measured by each temperature sensor. Note that the "each temperature sensor" here specifically refers to a plurality of sets of a pair of temperature sensors in the first measurement set and a pair of temperature sensors in the second measurement set.

[0012] [3] According to yet another aspect of the present invention, there is provided a deep temperature measurement method for measuring a deep temperature TB of a subject using a deep temperature measurement probe including a first measurement set including a first heat conduction path having a first thermal resistance and a pair of temperature sensors arranged to face each other across the first heat conduction path, and a second measurement set including a second heat conduction path having a second thermal resistance and a pair of temperature sensors arranged to face each other across the second heat conduction path. The deep temperature measurement method includes a first measurement step in which, when a uniquely designated point on the surface of the subject is designated as a measurement reference point RP, a subject-side temperature sensor of a first measurement set is brought into contact with the measurement reference point RP, and a pair of temperature sensors of the first measurement set measure a temperature T1 on the subject side of the first heat conduction path and a temperature T3 on the outside side, respectively; a first measurement system temperature acquisition step in which the measured temperature T1 on the subject side of the first heat conduction path and the temperature T3 on the outside side are defined as "temperatures related to the first measurement system"; and a second measurement set in which a subject-side temperature sensor of a second measurement set is brought into contact with each of measurement points equally divided into n on an imaginary circumference centered on the measurement reference point RP, and a pair of temperature sensors of the second measurement set measure a temperature T2 on the subject side of the second heat conduction path and a temperature T3 on the subject side of the second heat conduction path and a temperature T4 on the subject side of the second heat conduction path and a temperature T5 on the subject side of the second heat conduction path and a temperature T6 on the subject side of the second heat conduction path and a temperature T7 on the subject side of the second heat conduction path and a temperature T8 on the subject side of the second heat conduction path and a temperature T9 on the subject side of the second heat conduction path and a temperature T10 on the subject side of the first heat conduction path and a temperature T111 on the subject side of the first heat conduction path and a temperature T122 on the subject side of the second heat conduction path and a temperature T123 on the subject side of the second heat conduction path and a temperature T124 on the subject side of the second heat conduction path and a temperature T125 on the subject side of the first heat conduction path and a temperature T126 on the subject side of the first heat conduction path and a temperature T127 on the subject side of the first heat conduction path and a temperature T128 on the subject side of the first heat conduction path and a temperature T129 on the subject side of the first heat conduction path and Ａ , T2 Ｂ , and the temperature T4 on the outside Ａ , T4 Ｂ , . . . at each measurement point, and a temperature T2 Ａ , T2 Ｂ , ... are averaged to obtain the average value T2, and the temperature T4 on the outside at each measurement point Ａ , T4 Ｂ , ... to calculate the arithmetic mean to set the average value as T4, a second measurement system temperature acquisition step to set the average value T2 on the subject side and the average value T4 on the outside side calculated by the arithmetic mean step as the "temperature related to the second measurement system," and a deep temperature estimation step to estimate the deep temperature TB by the dual heat flow method based on the acquired "temperatures T1, T3 related to the first measurement system" and "temperatures T2, T4 related to the second measurement system." Note that n is a natural number of 2 or more.

[0013] The deep temperature measurement probe of the present invention makes it possible to measure deep temperatures with higher accuracy than conventional methods. Also, the deep temperature meter and deep temperature measurement method of the present invention make it possible to measure deep temperatures with higher accuracy than conventional methods.

[0014] 1 is a diagram illustrating a deep temperature measuring probe 1 according to a first embodiment. A diagram illustrating components of the deep temperature measuring probe 1. A thermal equivalent circuit diagram of the deep temperature measuring probe 1. A block diagram illustrating an example of the hardware configuration of a deep temperature thermometer 500 according to the first embodiment. A flowchart illustrating a deep temperature measuring method according to the first embodiment. A cross-sectional view schematically illustrating an experimental system. A diagram illustrated to illustrate the effects of the first embodiment. A diagram illustrated to illustrate the effects of the first embodiment. A diagram illustrated to illustrate a deep temperature measuring probe 2 according to a second embodiment. A diagram illustrated to illustrate a deep temperature measuring probe 3 according to a third embodiment. A plan view showing a deep temperature measuring probe 4 according to a modified example. A cross-sectional view of a main part showing deep temperature measuring probes 5 and 6 according to modified examples.

[0015] The deep body temperature measurement probe, deep body thermometer, and deep body temperature measurement method of the present invention will be described below with reference to the drawings. For configurations and structures common to each drawing, the symbols in the previous drawing can be used, and therefore the symbols may be omitted in subsequent drawings. For symbols common to each drawing, the content already explained for the symbols can also be used in the explanations of other drawings, and therefore the explanations in other drawings will be omitted.

[0016] In this specification, the heat flow path formed in the substrate 10 may be referred to as the "heat conduction path." The "heat conduction path" may also be referred to as the "heat flow path," the deep temperature measurement probe may simply be referred to as the "probe," and the temperature sensor may simply be referred to as the "sensor." Although there are notations in which auxiliary symbols are added to the reference numerals indicating the components (e.g., second measurement set 120A, 120B, etc.), the specification may sometimes use notations in which the auxiliary symbols are omitted (e.g., second measurement set 120).

[0017] [Embodiment 1] 1. Configuration of the Deep Temperature Measurement Probe 1 of Embodiment 1 FIG. 1 is a diagram illustrating the deep temperature measurement probe 1 of Embodiment 1. FIG. 1(a) is a cross-sectional view of the deep temperature measurement probe 1 as viewed from the arrow B-B in FIG. 1(b), and FIG. 1(b) is a plan view of the deep temperature measurement probe 1 as viewed along the arrow A in FIG. 1(a). FIG. 2 is a diagram illustrating the components of the deep temperature measurement probe 1. FIG. 2(a) is a plan view of the circuit board 10, showing the surface of the bare board without temperature sensors 21, 22, 23A, 23B, 24A, and 24B mounted thereon. FIG. 2(b) is a bottom view of the bottom of a SON package in which temperature sensors 21 to 24B are implemented. FIG. 3 is a thermal equivalent circuit diagram of the deep temperature measurement probe 1.

[0018] (1) Overview of the Deep Temperature Measurement Probe 1: The deep temperature measurement probe 1 measures the deep temperature of a subject 9 using the dual heat flow method. As shown in FIG. 1 , the deep temperature measurement probe 1 directly or indirectly contacts the backside of the probe 1 with the subject's surface 9a to measure the temperature TB of the subject's deep portion 9c. In the figure, the symbol Rs represents the thermal resistance of the subject's intermediate portion 9b, which cannot be directly measured. Typical subjects 9 include living organisms such as humans and animals, but in this embodiment, the description will be limited to a human. The deep temperature measurement probe 1 is constructed based on a substrate 10 and includes heat conduction paths 115, 125A, and 125B constructed within the substrate 10, temperature sensors 21, 22, 23A, 23B, 24A, and 24B (hereinafter referred to as 21 to 24B) mounted on the substrate 10, and other components.

[0019] (2) Regarding the Substrate 10: The substrate 10 functions as a base on which the temperature sensors 21 to 24B are mounted, and also partially or entirely constitutes a heat flow path (heat flow path or heat conduction path) through which heat flows from the rear surface 10b to the front surface 10a (see FIG. 1(a)). Details of the heat conduction paths 115, 125A, and 125B will be described later. The substrate 10 is flat, having a front surface 10a and a rear surface 10b. For convenience, the surface facing the outside world will be referred to as the front surface 10a, and the surface facing the test object 9 will be referred to as the rear surface 10b.

[0020] As shown in FIG. 2A, the substrate 10 is specifically configured as a printed circuit board on which a wiring pattern 13 is formed. A glass epoxy substrate, for example, can be used as the base material of the substrate 10. Other materials, such as polyimide, glass, silicon, and ceramics, may also be used as the base material of the substrate 10. The substrate 10 of this embodiment is a so-called double-sided substrate having wiring patterns 13 on both the front surface 10a and the back surface 10b. The wiring pattern 13 (wiring pattern in a broad sense) includes terminals 13c, wiring patterns 13a in a narrow sense connecting the terminals 13c, and lands 13b in a narrow sense formed in the shape of pads. Note that the wiring pattern 13a in a narrow sense is omitted from the drawing.

[0021] (3) Temperature sensors 21 to 24B Temperature sensors 21 to 24B measure the temperature at the point of contact (node) and output a signal according to the measured temperature, and can be configured with, for example, discrete devices such as thermocouples, platinum resistance thermometers, thermistors, or devices that are integrated into ICs (Integrated Circuits) and output digital output signals. Using such devices that output digital signals makes it less likely for noise to be introduced into the output from the sensors, allowing for more stable measurements.

[0022] As shown in FIG. 2(b), in the first embodiment, the temperature sensors 21-24B are integrated into ICs. For example, the temperature sensors 21-24B may be implemented in a small outline non-leaded package (SON) package, as shown in the figure. The temperature sensors 21-24B may be bare chips or wafer-level chip-size packages (WL-CSPs). These packages with small thermal capacity are suitable for the present invention because they reach thermal equilibrium quickly and therefore reduce the time required for deep temperature estimation. Of course, temperature sensors packaged in other forms may also be used. The temperature sensors 21-24B each have a semiconductor chip (not shown) for sensing temperature internally, and external connection terminals 28 electrically connected to the semiconductor chip are exposed on their bottom surfaces. The temperature sensors 21-24B also have a thermal pad 29 on their bottom surfaces to improve thermal coupling between the contact points to be measured (specifically, the nodes of the heat flow paths) and the internal semiconductor chip.

[0023] 1, the external connection terminal 28 of each of the temperature sensors 21 to 24B is connected to the terminal 13c of the substrate 10 via solder 51. This establishes an electrical connection between the two and fixes each sensor onto the substrate 10.

[0024] The thermal pads 29 of the temperature sensors 21 and 22 are connected to the lands 13b of the substrate 10 over the entire overlapping area via solder 51. This configuration improves thermal coupling with the lands 13b (nodes serving as connection points for the first heat conduction paths 115) of the substrate 10, and the distance between the thermal pads 29 and the lands 13b can be fixed by the solder 51.

[0025] (4) Regarding the first measurement set 110 and the second measurement sets 120A and 120B, the deep temperature measurement probe 1 is composed of multiple "measurement sets" arranged according to a predetermined rule. A "measurement set" refers to a unit for detecting the heat flow emitted from the subject 9, and in this case refers to a unit that integrates a heat conduction path with a predetermined thermal resistance and a pair of temperature sensors mounted on a board so as to face each other across the heat conduction path.

[0026] The deep temperature measurement probe 1 of embodiment 1 includes a first measurement set 110 placed at the measurement reference point RP, and further includes multiple second measurement sets 120 that have different thermal conductivities from the first measurement set 110 due to differences in the structure or materials of the heat conduction paths, etc.

[0027] In the deep temperature measuring probe 1 according to the first embodiment, a plurality of second measurement sets 120A, 120B, etc. are arranged to surround the position of the first measurement set 110. More specifically, the plurality of second measurement sets 120A, 120B, etc. are arranged on a virtual circumference centered on the position of the first measurement set 110 so that the center-to-center distances of the temperature sensors belonging to each second measurement set 120A, 120B, etc. are equal. More specifically, the deep temperature measuring probe 1 has two or more even number of second measurement sets 120 (two sets in the example of the first embodiment), and the paired second measurement sets 120A, 120B are arranged symmetrically on both sides of the position of the first measurement set 110.

[0028] Note that when discussing the placement positions of the first measurement set 110 and the second measurement set 120, this refers to the placement positions of the points (points) that can be considered to be the centers of the heat conduction paths and temperature sensors in each measurement set. For reference, in FIG. 1 and other figures, the first measurement set 110 is placed so that the point that can be considered to be the center of the first measurement set 110 coincides with the measurement reference point RP. Furthermore, the phrase "surrounding the placement position of the first measurement set" here can also be interpreted as meaning that, when a sphere is imagined with the placement position of the first measurement set (measurement reference point RP) as its center, all of the second measurement sets are not unevenly distributed in a specific hemispherical region. Furthermore, the "center-to-center distance of the temperature sensors" here can also be explained as the distance between the centers of adjacent temperature sensors on a virtual circle.

[0029] The first measurement set 110, located at the center of the probe (measurement reference point RP), comprises a first heat conduction path 115 made of a material with a first thermal conductivity within the substrate 10, and a pair of temperature sensors 21, 22 mounted on the substrate so as to face each other across the first heat conduction path 115. This first measurement set 110 detects a first heat flow 111 that is emitted from the deep part 9c of the subject and flows through the intermediate part 9b of the subject and the first heat conduction path 115.

[0030] The second measurement set 120A, located on the left side of the drawing, comprises a second heat conduction path 125A made of a material with a second thermal conductivity within the substrate 10, and a pair of temperature sensors 23A and 24A mounted on the substrate so as to face each other across the second heat conduction path 125A. The second measurement set 120B, located on the right side of the drawing, comprises a second heat conduction path 125B made of a material with a second thermal conductivity within the substrate 10, and a pair of temperature sensors 23B and 24B mounted on the substrate so as to face each other across the second heat conduction path 125B. The second thermal conductivity is a conductivity that exhibits a value different from the first thermal conductivity.

[0031] The second measurement sets 120A and 120B are substantially identical in construction (materials, structure, etc.) and configured to perform substantially the same functions as heat measurement systems. These second measurement sets 120A and 120B detect second heat flows 112A and 112B emanating from the deep portion 9c of the subject and flowing through the intermediate portion 9b of the subject and the second heat conduction paths 125A and 125B.

[0032] (5) As can be seen from Figures 3 and 1 regarding the specific configuration of the heat conduction path and the arrangement of the temperature sensors, the deep temperature measurement probe 1 is configured so that the first heat conduction path 115 and the second heat conduction paths 125A, 125B have different thermal resistance values ​​R1, R2 in the thickness direction in accordance with the requirements of the dual heat flow method. For reference, in embodiment 1, by filling both heat conduction paths with materials having different thermal conductivities, the first heat conduction path 115 and the second heat conduction paths 125A, 125B have different thermal resistances in the thickness direction even if they have the same thickness.

[0033] The first heat conduction path 115 is made of a material having a first thermal conductivity. Specifically, the first heat conduction path 115 is made of the substrate 10 itself and the solder 51 interposed between the thermal pad 29 and the land 13b.

[0034] A first heat flow 111 flows from the back side to the front side of the deep temperature measurement probe 1 through this first heat conduction path 115. Temperature sensors 21 and 22 are disposed at the upstream and downstream nodes of this first heat conduction path 115 (thermal resistance R1), respectively, so that the first heat flow 111 can be indirectly measured from the temperatures measured by the temperature sensors 21 and 22.

[0035] On the other hand, the second heat conduction paths 125A, 125B are made of a material with a second thermal conductivity. Regarding the second heat conduction paths 125A, 125B, through-holes 15 are formed directly below the temperature sensors 23A, 24A, 23B, and 24B belonging to the second measurement sets 120A and 120B, penetrating between the front surface 10a and the back surface 10b of the substrate 10, and these through-holes 15 constitute the second heat conduction paths 125A, 125B. In other words, the pair of temperature sensors 23A, 24A or the pair of temperature sensors 23B, 24B are connected by the through-holes 15, respectively. Here, "connected" can mean both a spatial connection and a connection in terms of a thermal circuit.

[0036] Furthermore, in the second heat conduction paths 125A and 125B of the first embodiment, an air layer 30 is disposed inside the through hole 15. It can be said that the air layer 30 disposed inside the through hole 15 realizes the thermal resistor that constitutes the second heat conduction paths 125A and 125B. The reference numeral 15a denotes the inner wall of the through hole. The air layer 30 has low thermal conductivity and can be provided with a large thermal resistance. This makes it possible to ensure a thermal resistance R2 that is larger than the thermal resistance R1 of the first heat conduction path 115 without increasing the thickness of the second measurement sets 120A and 120B. This allows the probe to be made thinner and more compact.

[0037] Through this second heat conduction path 125A, the second heat flow 112A flows from the back side to the front side of the deep temperature measurement probe 1. Temperature sensors 23A and 24A are disposed at the upstream and downstream nodes of this second heat conduction path 125A (thermal resistance R2), respectively, so that the second heat flow 112A can be indirectly measured from the temperatures measured by the temperature sensors 23A and 24A. The second heat conduction path 125B is similar to the second heat conduction path 125A.

[0038] Of course, the effects will be the same even if the through holes 15 and air layer 30 of the second heat conduction paths 125A and 125B of the first embodiment described so far are formed in the first heat conduction path 115 but not in the second heat conduction paths 125A and 125B. This also applies to a structure in which multiple second heat conduction paths are formed, as will be described later.

[0039] (6) Regarding the heat insulating layers 40 and 42, as shown in FIG. 1, in the deep temperature measurement probe 1, the heat insulating layer 40 is preferably disposed between the first heat conduction path 115 and the second heat conduction paths 125A and 125B when the substrate 10 is viewed in plan. In the first embodiment, specifically, the heat insulating layer 40 and the heat insulating layer 42 (described later) are configured as air layers disposed in through holes penetrating between the front surface 10a and the back surface 10b of the substrate 10. The through holes constituting the heat insulating layers 40 and 42 may be configured as elongated holes having dimensions longer than the sides of each of the temperature sensors 21 to 24B, as shown in FIG. 1. It is also preferable that a heat insulating material or heat insulating paper (not shown) be disposed inside the through holes constituting the heat insulating layer 40.

[0040] The heat insulating layer 40 configured in this manner provides thermal insulation between the first heat conduction path 115 and the second heat conduction paths 125A and 125B, thereby suppressing the exchange of heat in the lateral direction between the first heat flow 111 and the second heat flow 112A and between the first heat flow 111 and the second heat flow 112B. Each heat conduction path essentially only experiences a heat flow in the vertical direction (thickness direction), which increases the independence of the first heat flow 111 and the second heat flows 112A and 112B and approaches the principle of the dual heat flow method, thereby enabling more accurate and precise deep temperature measurement.

[0041] Furthermore, it is further preferable that a heat insulating layer 42 be disposed around at least one of the first heat conduction path 115 and the second heat conduction path 125A, 125B in the deep temperature measurement probe 1. The heat insulating layer 42 disposed around the periphery can block heat that attempts to infiltrate from the vicinity of the outer periphery of the probe toward each heat conduction path, and deep temperature measurement can be expected to be even more accurate and precise.

[0042] 2. Configuration of the Deep Thermometer 500 According to the First Embodiment FIG. 4 is a block diagram showing an example of the hardware configuration of the deep thermometer 500 according to the first embodiment.

[0043] As shown in FIG. 4, the deep body temperature meter 500 according to the first embodiment includes the deep body temperature measuring probe 1 according to the first embodiment and the temperature sensors 21, 22, 23A, 24A, and 23B. ， The temperatures T1, T3, and T2 measured by 24B are Ａ , T4 Ａ , T2 Ｂ , T4 Ｂ (see FIGS. 1, 3, etc.), and a deep temperature estimation unit 210 that estimates the deep temperature TB of the subject 9. Reference numeral 200 denotes a temperature measurement unit.

[0044] The deep temperature estimation unit 210 calculates the deep temperature TB using the dual heat flow method (for example, by calculating Equation (10) described below) to obtain an estimated value. The deep temperature estimation unit 210 can be configured using either a dedicated circuit or a general-purpose circuit. As a general-purpose circuit, it can be realized, for example, by an information processing device (unreferenced) as shown in FIG. 4. The information processing device has a processor 211, a memory 212, a storage 213, an input / output interface 214, and a communication interface 215. These are connected to a bus BS. The concept including the memory 212 and the storage 213 is referred to as a storage unit 216. The deep temperature estimation unit 210 can be specifically realized by the processor 211 executing a program (not shown) related to deep temperature estimation stored in the storage unit 216.

[0045] The deep temperature estimation unit 210 calculates temperature data T1 obtained from the subject-side temperature sensor 21 of the first measurement set 110, temperature data T3 obtained from the ambient-side temperature sensor 22 of the first measurement set 110, and temperature data T2 obtained from each subject-side temperature sensor 23A, 23B, ... of the plurality of second measurement sets 120A, 120B, .... Ａ , T2 Ｂ , . . . and the temperature data T4 obtained from each of the external temperature sensors 24A, 24B, . . . of the second measurement sets 120A, 120B, . . . Ａ, T4 Ｂ The deep temperature TB is estimated based on the arithmetic mean T4 of the temperatures T1 to T4, and the deep temperature TB is estimated based on the arithmetic mean T4 of the temperatures T1 to T4. The deep temperature TB is calculated by applying the temperatures T1 to T4 to equation (10) described below. Of the pair of temperature sensors, the temperature sensor located on the subject side is defined as the "subject-side temperature sensor," and the temperature sensor located on the opposite side of the subject is defined as the "external-side sensor."

[0046] 3. Deep temperature measurement method according to embodiment 1 The deep temperature measurement method according to embodiment 1 is a deep temperature measurement method that measures the deep temperature TB of a subject using a deep temperature measurement probe 1 equipped with a first measurement set 110 consisting of a first heat conduction path 115 having a first thermal resistance R1 and a pair of temperature sensors 21, 22 arranged opposite each other across the first heat conduction path 115, and a second measurement set 120A, 120B,... consisting of second heat conduction paths 125A, 125B,... and a pair of temperature sensors 23A, 24A, 23B, 24B,... arranged opposite each other across the second heat conduction paths 125A, 125B,... Note that a uniquely designated point on the subject surface 9a is the measurement reference point RP (see also FIG. 3).

[0047] Fig. 5 is a flowchart illustrating the deep temperature measurement method according to embodiment 1. As shown in Fig. 5, the deep temperature measurement method according to embodiment 1 includes a first measurement step S10, a first measurement system temperature acquisition step S20, a second measurement step S30, an arithmetic mean step S40, a second measurement system temperature acquisition step S50, and a deep temperature estimation step S60.

[0048] In the first measurement step S10, the temperature sensor 21 on the subject side of the first measurement set 110 is abutted against the measurement reference point RP, and the pair of temperature sensors 21, 22 of the first measurement set 110 measure the temperature T1 on the subject side of the first heat conduction path 115 and the temperature T3 on the outside side, respectively.

[0049] In the first measurement system temperature acquisition step S20, the measured temperature T1 on the subject side of the first heat conduction path 115 and the temperature T3 on the outside side are set as "temperatures related to the first measurement system."

[0050] In the second measurement step S30, the subject-side temperature sensors of the second measurement set are brought into contact with n equally divided measurement points on a virtual circumference centered on the measurement reference point RP (n is a natural number of 2 or more), and the pair of temperature sensors of the second measurement set measure the subject-side temperature and the external temperature of the second heat conduction path at each measurement point. Specifically, in the configuration illustrated in embodiment 1, the subject-side temperature sensor 23A of the second measurement set 120A is brought into contact with one side (left side in the figure) of the measurement reference point RP, and the pair of temperature sensors 23A, 24A of the second measurement set 120A measure the subject-side temperature T2 of the second heat conduction path 125A. Ａ and the temperature T4 on the outside Ａ Similarly, the temperature sensor 23A on the subject side of the second measurement set 120B is abutted on the other side (right side in the figure) symmetrical about the measurement reference point RP, and the pair of temperature sensors 23B, 24B of the second measurement set 120B measure the temperature T2 on the subject side of the second heat conduction path 125B. Ｂ and the temperature T4 on the outside Ｂ These steps are preferably carried out in parallel, but may be carried out successively.

[0051] The arithmetic mean step S40 is the temperature T2 on the subject side at each measurement point. Ａ , T2 Ｂ , ... are averaged to obtain the average value T2, and the temperature T4 on the outside at each measurement point Ａ , T4 Ｂ , . . . are averaged and the arithmetic mean is calculated so that the average value is T4.

[0052] In the second measurement system temperature acquisition step S50, the subject-side average value T2 and the outside-side average value T4 calculated in the arithmetic mean step S40 are set as the "temperature related to the second measurement system."

[0053] In the deep temperature estimation step S60, the deep temperature TB is estimated by the dual heat flow method based on the acquired "temperatures T1, T3 associated with the first measurement system" and "temperatures T2, T4 associated with the second measurement system."

[0054] 4. In equation (10) described below, which is used to estimate the deep temperature TB for the experimental system, it is necessary to identify and prepare in advance the thermal resistance ratio K between the thermal resistance R1 of the first heat conduction path 115 and the thermal resistance R2 of the second heat conduction paths 125A and 125B. If the materials and properties of the first heat conduction path 115 and the second heat conduction paths 125A and 125B are known, it is possible to theoretically determine the thermal resistance ratio K in advance.

[0055] On the other hand, the inventors have also developed a method in which a thermal resistance ratio K that is in line with actual conditions is experimentally determined in advance using a separate experimental system, and then this thermal resistance ratio K is applied to equation (10).

[0056] Regarding the method of experimentally determining the thermal resistance ratio K in advance in this embodiment 1, the contents of the prior patent application No. 2022-53593 (e.g., FIG. 4, paragraphs

[0038] to

[0046] ), which describes the contents of a previous invention by the inventor of the present application, and the contents of PCT / JP2023 / 17069 (e.g., FIGS. 4 and 5, paragraphs

[0039] to

[0051] ), can be incorporated and referenced in this specification, and therefore a detailed description thereof will be omitted in this specification.

[0057] However, equations (9) and (10) explained in Patent Document 1 will be described again below. From the thermal equivalent circuit in FIG. 4 of Patent Document 1, the thermal resistance ratio K between the thermal resistance of the first heat conduction path 115 and the thermal resistance of the second heat conduction path 125A or 125B is defined as follows: K = [(TB - T2) (T1 - T3)] / [(TB - T1) (T2 - T4)] ... (9) Then, equation (9) can be transformed into the following equation for calculating the deep temperature TB: TB = T1 + (T1 - T2) (T1 - T3) / [K (T2 - T4) - (T1 - T3)] ... (10)

[0058] In this embodiment, the "experimental system" shown in FIG. 6 is used to experimentally determine the thermal resistance ratio K using the water bath 130. The corresponding thermal equivalent circuit is shown in FIG. 3. As is clear from these figures, the configuration exemplified to explain the embodiment 1 differs from Patent Document 1 in that it has two sets of equivalently configured second heat conduction paths (reference numerals 125A and 125B). Therefore, for T2 described in Patent Document 1, the temperature data T2 obtained from the subject-side temperature sensors 23A and 23B of the second measurement sets 120A and 120B in this embodiment 1 is Ａ , T2 Ｂ Similarly, for T4 described in Patent Document 1, the temperature data T4 obtained from the external temperature sensors 24A and 24B of the second measurement sets 120A and 120B in the first embodiment is used. Ａ , T4 Ｂ The arithmetic mean of these is applied as T4.

[0059] From the findings of the above experimental system, it was confirmed that the deep temperature estimation unit 210 of embodiment 1 can be configured to estimate the deep temperature TB by applying the thermal resistance ratio K of the thermal resistance R1 of the first heat conduction path 115 and the thermal resistance R2 of the second heat conduction paths 125A, 125B, which is determined in advance using the relationship K = [(TB - T2) (T1 - T3)] / [(TB - T1) (T2 - T4)], and the above-mentioned temperatures T1, T2, T3, T4 obtained by probing the subject 9, to the relationship TB = T1 + (T1 - T2) (T1 - T3) / [K (T2 - T4) - (T1 - T3)].

[0060] In the configuration exemplified above to explain the first embodiment, the paired second measurement sets 120A and 120B are assumed to be arranged symmetrically with the center-to-center distances of the temperature sensors belonging to each second measurement set equal to each other with respect to the arrangement position of the first measurement set 110. However, the sensors do not necessarily have to be arranged symmetrically with the center-to-center distances equal to each other. For example, the paired second measurement sets 120A and 120B may be arranged such that the center-to-center distances of the sensors are different from each other with respect to the arrangement position of the first measurement set 110. In this case, the thermal resistance prorated by the center-to-center distances of the sensors from the arrangement position of the first measurement set 110 (measurement reference point RP) may be converted and applied as the thermal resistance of the second heat conduction path.

[0061] 5. Effects of the deep temperature measurement probe 1, deep thermometer 500, and deep temperature measurement method Figures 7 and 8 are diagrams shown to explain the effects of embodiment 1. Figure 8 shows a case where the deep temperature measurement probe 1 is applied at an angle due to the influence of the way in which force is applied when the probe is applied, and the thickness of the tissue (subject intermediate part 9b) such as skin and muscle directly below the probe up to the deep part 9c of the subject becomes uneven, resulting in a decrease in the thermal resistance of the subject intermediate part 9b (R in the figure). ＳＡ , R Ｓ , R ＳＢ ) are no longer the same.

[0062] (1) In the deep temperature measurement probe 1 according to the first embodiment, the plurality of second measurement sets 120A, 120B, etc. are arranged so as to surround the arrangement position of the first measurement set 110. Preferably, the plurality of second measurement sets 120A, 120B, etc. are arranged on a virtual circumference centered on the arrangement position of the first measurement set 110 so that the center-to-center distances of the temperature sensors belonging to each second measurement set are equal. More preferably, the probe 1 includes two or more even number of second measurement sets 120, and the paired second measurement sets 120A, 120B are arranged symmetrically on both sides of the arrangement position of the first measurement set 110 (measurement reference point RP) as the center. In the example of embodiment 1, a first heat conduction path 115 (thermal resistance R1) with a first thermal conductivity is arranged in the center of the substrate, and second heat conduction paths 125A, 125B (thermal resistance R2) with a second thermal conductivity, which is a different thermal resistance, are arranged symmetrically on both sides of it, and temperature measurement can be performed by a pair of temperature sensors on the test subject side and the opposite side of each heat conduction path.

[0063] According to the above configuration, the first heat flow 111 passing through the first heat conduction path 115 (thermal resistance R1) having the first thermal conductivity can be measured based on the actual temperatures T1 and T3 measured by the first measurement set 110 at the measurement reference point RP.

[0064] On the other hand, for the second heat flow 112 passing through the second heat conduction path 125 (thermal resistance R2) with the second thermal conductivity, first, the temperature T2 is measured by the second measurement set 120A at the measurement point A slightly away from the measurement reference point RP. Ａ , T4 Ａ At the same time, the temperature T2 is measured by the second measurement set 120B at the measurement point B, which is symmetrical to the measurement point A. Ｂ , T4 Ｂ When more than two second measurement sets 120 are provided, the temperature T2 is similarly measured by further second measurement sets 120C, . Ｃ , T4 Ｃ ,... are measured.

[0065] As shown in FIG. 7, the temperature on the test object side is measured at both measurement points as temperature T2 Ａ , T2 Ｂ, . . . are processed (for example, by arithmetic averaging) to cancel out and compensate for the mutual variations, and this is taken as T2. The temperature on the outside side is the temperature measured at both measurement points, T4. Ａ , T4 Ｂ The temperature values ​​T2 and T4 are processed (for example, by arithmetic averaging) to cancel out or compensate for the variations among the temperature values ​​T2, T4, and the result is designated as T4. Based on the processed temperature values ​​T2 and T4, the second heat flow passing through the second heat conduction path 125 (thermal resistance R2) having the second thermal conductivity can be virtually measured.

[0066] The paired second measurement sets 120A, 120B, ... are substantially identical in construction and are arranged to surround the measurement reference point RP (preferably so that the center-to-center distances of the temperature sensors are equal on a virtual circumference centered on the measurement reference point RP, and more preferably so that they are symmetrical about the measurement reference point RP). Therefore, by performing the above processing after temperature measurement, when estimating the deep temperature TB using the dual heat flow method, the second heat flow 112 passing through the second heat conduction path 125 (thermal resistance R2) with the second thermal conductivity can be treated as equivalent to the one virtually measured at the measurement reference point RP (thick arrow in Figure 7). At this time, the thermal resistance of the specimen intermediate portion 9b related to the virtual second heat flow 112 is R ＳＶ (See FIG. 7) ＳＶ is the thermal resistance R of the specimen intermediate part 9b related to the first heat flow 111 under certain conditions. Ｓ can be treated as equivalent.

[0067] By treating it as described above, even if the probe hits obliquely, as shown in FIG. 8, and the thermal resistances Rs of the specimen intermediate portion 9b directly below the probe are not the same, sensing can be performed using the second measurement sets 120A and 120B of the same construction, which are arranged around the measurement reference point RP (preferably so that the center-to-center distance of the temperature sensors is equal on a virtual circumference centered on the measurement reference point RP, more preferably symmetrically around the measurement reference point RP). Therefore, by performing the above-described offsetting and compensation process for the variations, the first heat flow 111 passing through the first heat conduction path 115 (thermal resistance R1) with the first thermal conductivity and the second heat flow 112 passing through the second heat conduction path 125 (thermal resistance R2) with the second thermal conductivity can be treated as if they were measured at substantially the same measurement reference point RP, and the reduction in the accuracy of the estimation of the deep temperature TB due to the thermal resistances Rs of the specimen intermediate portion 9b not being the same can be overcome.

[0068] Therefore, according to the deep temperature measurement probe 1 of embodiment 1, even if measurements are performed in a situation where the thermal resistance Rs under the skin of the heat flow path directly below each measurement set is not the same, by taking the average of the thermal resistance Rs under the skin of the multiple heat flow paths (averaging is an example of calculation processing), it is possible to assume that the thermal resistance Rs are apparently equal, so that deep temperature measurement with higher accuracy than conventional methods can be performed without violating the assumptions of the estimation formula for deep temperature TB. In other words, by assuming the above-mentioned virtual heat flow path, it is possible to perform deep temperature measurement with higher accuracy than conventional methods.

[0069] (2) The deep body temperature thermometer 500 and deep body temperature measurement method according to the first embodiment have the same main features as the above-described deep body temperature measurement probe 1. Therefore, the deep body temperature thermometer 500 and deep body temperature measurement method according to the first embodiment also exhibit the same functions and effects as the deep body temperature measurement probe 1, and can perform deep body temperature measurement with higher accuracy than conventional methods.

[0070] (3) Directly below the temperature sensors 23A, 24A, 23B, and 24B belonging to the second measurement sets 120A and 120B, a through hole 15 is formed that penetrates between the front surface 10a and the back surface 10b of the substrate 10, and the through hole 15 constitutes the second heat conduction path 125A and 125B.

[0071] According to the above configuration, the thermal resistance value R2 between the temperature sensor 23A and the temperature sensor 24A Ａ and the thermal resistance value R2 between the temperature sensor 23B and the temperature sensor 24B. Ｂ As a result, even if the substrate 10 constituting the probe is thinned and the thermal resistance value in the thickness direction of the substrate 10 is reduced overall, the thermal resistance value R1 of the first heat conduction path 115 and the thermal resistance value R2 of the second heat conduction paths 125A and 125B can be increased significantly. Ａ , R2 Ｂ Therefore, even if the substrate 10 constituting the probe is made thinner, it is possible to measure the deep temperature TB of the subject with high accuracy.

[0072] [Embodiment 2] Figure 9 is a diagram for explaining a deep temperature measuring probe 2 according to embodiment 2. Figure 9(a) is a cross-sectional view of the deep temperature measuring probe 2 in Figure 9(b) taken along the arrow CC, and Figure 9(b) is a plan view of the deep temperature measuring probe 2 as viewed along the arrow A in Figure 9(a).

[0073] The deep temperature measuring probe 2 of embodiment 2 basically has the same configuration as the deep temperature measuring probe 1 of embodiment 1, but differs from the deep temperature measuring probe 1 of embodiment 1 in the way the first heat conduction path and the second heat conduction path are configured.

[0074] As shown in Figure 9, in the deep temperature measurement probe 2 of embodiment 2, a through hole 16 is formed directly below the temperature sensors 21, 22 belonging to the first measurement set 110', penetrating between the front surface 10a and the back surface 10b of the substrate 10, and the through hole 16 constitutes the first heat conduction path 115'.

[0075] On the other hand, in the second measurement sets 120A' and 120B', the second heat conduction paths 125A' and 125B' are formed by the substrate 10 itself and the "solder 51" interposed between the thermal pad 29 and the land 13b. The basic structure is the same as that of the first heat conduction path 115 in the first embodiment.

[0076] In this way, in the deep temperature measuring probe 2 according to the second embodiment, it is only necessary to drill the through-hole 16 at one location in the central first heat conduction path 115', which reduces the number of processing steps and improves productivity.

[0077] The deep temperature measuring probe 2 according to embodiment 2 has a configuration basically similar to that of the deep temperature measuring probe 1 according to embodiment 1, except for the configuration of the first heat conduction path and the second heat conduction path. Therefore, the deep temperature measuring probe 2 similarly has the corresponding effects of the deep temperature measuring probe 1.

[0078] [Embodiment 3] Figure 10 is a diagram for explaining a deep temperature measurement probe 3 according to embodiment 3. Figure 10(a) shows a plan view, Figure 10(b) is a cross-sectional view taken along the line D-D in the plan view, and Figure 10(c) is a cross-sectional view taken along the line E-E in the plan view.

[0079] The deep temperature measurement probe 3 of embodiment 3 basically has the same configuration as the deep temperature measurement probes 1 and 2 of embodiments 1 and 2, but differs from the deep temperature measurement probes 1 and 2 of embodiments 1 and 2 in the number of second measurement sets and the way they are arranged.

[0080] 10 , the deep temperature measurement probe 3 according to the third embodiment includes four second measurement sets 120A′, 120B′, 120C′, and 120D′. These second measurement sets 120A′, 120B′, 120C′, and 120D′ are arranged to surround the position (measurement reference point RP) of the first measurement set 110′, and are arranged on a virtual circumference centered on the position of the first measurement set 110′ so that the center-to-center distances of the temperature sensors are equal (every 90° on the circumference). In other words, the pair of second measurement sets 120A′ and 120B′ are arranged along the X direction in a plan view of the substrate 10, and another pair of second measurement sets 120C′ and 120D′ are arranged along the Y direction perpendicular to the X direction.

[0081] In this way, the second measurement set centered on the measurement reference point RP is arranged not only in the X direction but also in the Y direction, so that the variation in the second heat flow 112 due to differences in location can be compensated for two-dimensionally. Therefore, it is possible to perform deep temperature measurement with even higher accuracy than the deep temperature measurement probes 1 and 2 according to the first and second embodiments.

[0082] The deep temperature measuring probe 3 according to embodiment 3 has a configuration basically similar to the deep temperature measuring probes 1 and 2 according to embodiments 1 and 2, except for the number of second measurement sets and the arrangement thereof. Therefore, the deep temperature measuring probe 3 has the same effects as the deep temperature measuring probes 1 and 2.

[0083] In the configuration exemplified to explain the third embodiment, the second measurement sets 120A', 120B', 120C', and 120D' are assumed to be arranged at equidistant symmetrical positions with respect to the arrangement position of the first measurement set 110'. However, they do not necessarily have to be arranged at equidistant symmetrical positions. The second measurement sets 120A', 120B', 120C', and 120D'1 do not necessarily have to be arranged at equidistant positions with respect to the arrangement position of the first measurement set 110'. In this case, the thermal resistance apportioned by the distance from the arrangement position of the first measurement set 110' (measurement reference point RP) may be converted and applied as the thermal resistance of the second heat conduction path.

[0084] Although the present invention has been described above based on the above embodiment, the present invention is not limited to the above embodiment and can be embodied in various forms without departing from the spirit of the present invention, and for example, the following modifications are also possible.

[0085] (1) FIG. 11 is a plan view showing a deep temperature measurement probe 4 according to a modified example. Up to now, the configurations exemplified for explaining each embodiment have included an even number of second measurement sets 120. However, the present invention is not limited to this. For example, as shown in FIG. 11, the present invention may be configured with an odd number of second measurement sets 120. In the example of FIG. 11, an odd number (three sets) of second measurement sets 120E, 120F, and 120G are arranged to surround the arrangement position of the first measurement set 110′, and are arranged on a virtual circumference centered on the arrangement position (measurement reference point RP) of the first measurement set 110′ so that the center-to-center distances of the sensors are equal (every 120° on the circumference).

[0086] (2) It is preferable that insulating paper (not shown) be further disposed inside the through holes 15, 16 configured in each embodiment. It is also preferable that the insulating paper has a thermal conductivity approximately equal to that of air. When insulating paper is filled into the air layer 30 disposed in the through holes 15, 16, the overall thermal resistance value of the internal space of the through holes 15, 16 becomes approximately the same as the thermal resistance value of air. The insulating paper may be appropriately formed into a three-dimensional shape by alternately folding it to form a corrugated shape, folding it into a repeating pattern of peaks and valleys, or randomly rolling it, and then filled into the internal space of the through holes 15, 16.

[0087] By placing insulating paper inside the through-holes 15, 16 that constitute the first heat conduction path 115' and the second heat conduction path 125A, 125B, the insulating paper can prevent air movement inside the through-holes 15, 16, thereby suppressing convection within the through-holes 15, 16. This suppresses heat transfer through "convection" within the corresponding heat conduction path, and instead focuses on direct heat transfer through "conduction" via the air layer 30 and the insulating paper. This creates an even more ideal thermal circuit, enabling deeper temperature measurements with even greater accuracy. The above can also be applied to through-holes serving as insulating layers 40, 42, achieving the same effect.

[0088] (3) In each embodiment, a glass epoxy substrate is used as the substrate 10. However, the present invention is not limited to this. The substrate 10 may be made of a glass substrate, and the interiors of the predetermined through holes 15, 16 may be configured to be vacuum or near-vacuum (not shown). Although a vacuum in the strict sense cannot be considered a "material" having the first or second thermal conductivity, the present invention will be applied here as a "material" having a predetermined thermal conductivity, even in the case of a vacuum.

[0089] By providing through holes 15, 16 in the glass substrate and further creating a vacuum or near-vacuum state inside these through holes 15, 16, the thermal conductivity of the heat conduction path can be further reduced compared to air. As a result, the thermal resistance between the subject-side temperature sensor and the outside-side temperature sensor can be further increased, and the thermal resistance value R1 of the first heat conduction path and the thermal resistance value R2 of the second heat conduction path can be further increased. Ａ , R2 Ｂ The difference between the two can be set even larger.

[0090] (4) In the substrate 10, another through hole (not shown) may be formed directly below the pair of temperature sensors, penetrating between the front surface 10a and the back surface 10b of the substrate 10, and metal may be embedded in the another through hole, so that the pair of temperature sensors are connected via the metal.

[0091] Here, copper, for example, can be used as the "metal." The thermal conductivity of copper is 403 [W / (mK)] (at 0 [°C]), which is orders of magnitude greater than that of the materials constituting the substrate 10, etc. From the perspective of thermal resistance, metals can have thermal resistance values ​​that are orders of magnitude smaller than that of the materials constituting the substrate 10, etc. Therefore, the thermal resistance value of the heat conduction path made of metal can be significantly reduced, and a difference from the thermal resistance values ​​of other heat conduction paths can be easily ensured.

[0092] (5) Figure 12 is a cross-sectional view of a main portion of a modified deep temperature measurement probe 4, 5. In each embodiment, the temperature sensors 21 to 24D are implemented as SON package ICs. However, the present invention is not limited to this. For example, as shown in Figure 12(a), the temperature sensors 21 to 24 can be configured as WL-CSP (Wafer Level Chip Size Package) ICs. Also, as shown in Figure 12(b), the temperature sensors 21 to 24 can be configured by directly mounting bare chips on the substrate 10.

[0093] (6) In the third embodiment, the deep temperature measurement probe 3 is illustrated as having the through-holes 16 formed in the first heat conduction path 115'. However, the present invention is not limited to this. The through-holes 16 may be formed in the second heat conduction paths 125A', 125B', 125C', and 125D'.

[0094] (7) In the third embodiment, the arrangement pitch of the second measurement sets 120A', 120B', 120C', and 120D' is preferably approximately the same in the X and Y directions in view of two-dimensional symmetry. However, this is not limited thereto, and the arrangement pitch in the X direction and the arrangement pitch in the Y direction may be different.

[0095] (8) In the drawings illustrating the embodiments, the thermal insulating layers 40 and 42 are provided. However, the present invention is not limited to this. The probe may not be provided with the thermal insulating layers 40 and 42.

[0096] 1, 2, 3, 4, 5, 6...Deep temperature measurement probe, 9...Subject, 9a...Subject surface, 9b...Subject intermediate portion, 9c...Subject deep portion, 10, 10', 10'', 10E...Substrate, 10a, 10Ea...Substrate surface, 10b...Substrate back surface, 13...Wiring pattern in broad sense, 13a...Wiring pattern in narrow sense, 13b...Land, 13c...Terminal, 15, 16...Through hole, 15a, 16a...Inner wall of through hole, 21, 22, 23, 23A, 23B, 24, 24A, 24B, 24C, 24D, 24E, 24F, 24G...Temperature sensor, 28...External connection terminal, 29...Thermal pad, 30...Air layer, 40, 42...Heat insulating layer, 51...Solder, 110, 110' ...First measurement set, 111...First heat flow, 112, 112A, 112B, 112C, 112D...Second heat flow, 115, 115'...First heat conduction path, 120, 12A, 120A', 120B, 120B', 120C', 120D', 120E, 120F, 120G...Second measurement set, 125, 125A, 125A', 125B, 125B', 125C', 125D'...Second heat conduction path, 130...Water bath, 210...Deep temperature estimation unit, 211...Processor, 212...Memory, 213...Storage, 214...Input / output interface, 215...Communication interface, 216...Storage unit, 500...Deep thermometer, BS...Bus, RP...Measurement reference point

Claims

1. A deep temperature measuring probe used when measuring the deep temperature of a subject by the dual heat flow method, A first measurement set comprising a first heat conduction path made of a material with a first thermal conductivity within a flat substrate, and a pair of temperature sensors mounted on the substrate so as to face each other across the first heat conduction path, The system comprises a second measurement set consisting of a second heat conduction path made of a material with a second thermal conductivity within the substrate, and a pair of temperature sensors mounted on the substrate so as to face each other across the second heat conduction path. The deep temperature measuring probe comprises a plurality of the second measurement sets, The plurality of second measurement sets are arranged to surround the placement position of the first measurement set. The aforementioned substrate consists of a single substrate with substantially uniform thickness. A through-hole is formed directly beneath each of the temperature sensors belonging to the second measurement set, penetrating between the front and back surfaces of the substrate, and this through-hole constitutes the second heat conduction path. An air layer is provided inside the aforementioned through hole. A probe for measuring deep body temperature, characterized by the following features.

2. In the deep temperature measurement probe according to claim 1, A probe for measuring deep temperature, characterized in that insulating paper is further placed inside the through-hole.

3. In the deep body thermometer probe according to claim 1 or 2, A probe for measuring deep body temperature, characterized in that the plurality of second measurement sets are arranged on a virtual circumference centered on the position of the first measurement set, such that the distance between the centers of the temperature sensors belonging to each second measurement set is equal.

4. In the deep temperature measurement probe according to claim 1 or 2, The deep temperature measuring probe comprises two or more even-numbered second measurement sets, wherein the paired second measurement sets are arranged symmetrically on both sides of the arrangement position of the first measurement set.

5. In the deep temperature measurement probe according to Claim 4, The paired second measurement set is arranged along the X direction in a plan view of the substrate, Furthermore, the probe for measuring deep body temperature is characterized in that another pair of the second measurement sets is arranged along the Y direction perpendicular to the X direction.

6. In the deep temperature measurement probe according to claim 1 or 2, When the substrate is viewed in plan view, an insulating layer is arranged between the first heat conduction path and the second heat conduction path. The aforementioned heat insulating layer is a through hole that penetrates between the front and back surfaces of the substrate. A probe for measuring deep body temperature, characterized by the following features.

7. In the deep temperature measurement probe according to claim 6, When the substrate is viewed in plan view, an insulating layer is arranged around at least one of the first heat conduction path and the second heat conduction path. The aforementioned heat insulating layer is a through hole that penetrates between the front and back surfaces of the substrate. A probe for measuring deep body temperature, characterized by the following features.

8. A deep body thermometer comprising: a probe for measuring deep body temperature according to claim 1 or 2; and a deep body temperature estimation unit that estimates the deep body temperature of a subject using the temperatures measured by each of the temperature sensors.

9. In the deep body thermometer according to claim 8, The deep temperature measurement probe is configured such that the plurality of second measurement sets are arranged on a virtual circumference centered on the position of the first measurement set, with the distance between the centers of the temperature sensors belonging to each second measurement set being equal. When, of the pair of temperature sensors, the temperature sensor located on the side of the subject is designated as the subject-side temperature sensor, and the temperature sensor located on the opposite side of the subject is designated as the external-side sensor, The deep temperature estimation unit uses temperature data T1 obtained from the subject-side temperature sensor of the first measurement set, temperature data T3 obtained from the external temperature sensor of the first measurement set, and temperature data T2 obtained from each subject-side temperature sensor of the plurality of second measurement sets. Ａ , T2 Ｂ The arithmetic mean T2 of , and the temperature data T4 obtained from each of the ambient temperature sensors of the plurality of second measurement sets. Ａ , T4 Ｂ The deep body temperature TB is estimated based on the arithmetic mean T4 of , and . A deep body thermometer characterized by the following features.

10. In the deep body thermometer according to claim 9, The core body temperature estimation unit is, The thermal resistance ratio K of the thermal resistance of the first heat conduction path and the thermal resistance of the second heat conduction path, which was predetermined using the relationship K = [(TB - T2)(T1 - T3)] / [(TB - T1)(T2 - T4)], and the temperatures T1, T2, T3, T4 obtained by probing the subject, TB=T1+(T1-T2)(T1-T3) / [K(T2-T4)-(T1-T3)] The deep temperature TB is estimated by applying the following relationship. A deep body thermometer characterized by the following features.

11. A deep temperature measuring probe used when measuring the deep temperature of a subject by the dual heat flow method, A first measurement set comprising a first heat conduction path made of a material with a first thermal conductivity within a flat substrate, and a pair of temperature sensors mounted on the substrate so as to face each other across the first heat conduction path, The system comprises a second measurement set consisting of a second heat conduction path made of a material with a second thermal conductivity within the substrate, and a pair of temperature sensors mounted on the substrate so as to face each other across the second heat conduction path. The deep temperature measuring probe comprises a plurality of the second measurement sets, The plurality of second measurement sets are arranged to surround the placement position of the first measurement set. The aforementioned substrate consists of a single substrate with substantially uniform thickness. A through-hole is formed directly beneath the temperature sensor belonging to the first measurement set, penetrating between the front and back surfaces of the substrate, and this through-hole constitutes the first heat conduction path. An air layer is provided inside the aforementioned through hole. A probe for measuring deep body temperature, characterized by the following features.

12. In the deep temperature measurement probe according to claim 11, A probe for measuring deep temperature, characterized in that insulating paper is further placed inside the through-hole.