Nonvolatile memory device, operation method of nonvolatile memory device, and storage device including nonvolatile memory device

By biasing word lines only for the accessed partial page and using special memory cells to manage capacitance, the non-volatile memory device addresses excessive power consumption during partial page access, achieving reduced power usage.

KR1020260113533APending Publication Date: 2026-07-21SAMSUNG ELECTRONICS CO LTD
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Patent Information

Authority / Receiving Office
KR · KR
Patent Type
Applications
Current Assignee / Owner
SAMSUNG ELECTRONICS CO LTD
Filing Date
2025-01-13
Publication Date
2026-07-21

AI Technical Summary

Technical Problem

Existing non-volatile memory devices consume excessive power during partial page access operations due to the capacitance loads on word lines from all memory cells, regardless of whether they are accessed or not.

Method used

The non-volatile memory device employs a row decoder to bias word lines only for the capacitances of the accessed partial page, rather than the entire page, and utilizes special memory cells to manage capacitance loads during partial access operations, reducing power consumption.

Benefits of technology

This approach reduces power consumption by minimizing the capacitance load on word lines during partial access operations, thereby optimizing power usage in non-volatile memory devices.

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Abstract

The present invention relates to a non-volatile memory device. The non-volatile memory device of the present invention comprises a memory cell array including a plurality of memory cells divided into pages, string select lines, ground select lines, and a row decoder connected to the memory cell array through word lines, and a page buffer connected to the memory cell array through bit lines, wherein in response to receiving a read command for a first page from an external device, the row decoder is configured to bias word lines corresponding to the capacitances of the memory cells of the first page, and in response to receiving a read command for a first part page of the first page from an external device, the row decoder is configured to bias word lines corresponding to the capacitances of the memory cells of the first part page.
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