Ion Forming Device Including Contact Ion Sensor

Abstract

One embodiment may provide an ion-forming device comprising: an ion source in which an output portion communicates with a chamber through a through hole and generates ions between an anode electrode and a cathode electrode using a voltage supplied from a source body to an anode electrode of the output portion, thereby forming ions in the internal space of the chamber; and a contact-type ion sensor portion comprising an ion sensor portion disposed on a path through which ions generated from the ion source travel and detecting ions generated from the ion source in real time.

Description

Technology Field

[0001] The present embodiment relates to an ion-forming device comprising a contact-type ion sensor capable of detecting and displaying ion generation, specifically for verifying the performance of an ion source. Background Technology

[0002] Static electricity is generated by various causes, including friction and peeling. Such static electricity can occur in diverse environments, regardless of whether the material is a solid, liquid, insulator, or conductor. While the generated static electricity consists of equal amounts of positive and negative charges, in actual processes, static electricity of only one polarity often appears due to the difference in capacitance between the two.

[0003] In the manufacturing process of electronic devices such as memory elements, flat panel displays, and integrated circuits, foreign substances may adhere to the electronic devices due to the generation of static electricity, or patterns may be damaged by electrostatic discharge.

[0004] Various methods are being implemented to suppress or eliminate such static electricity generation, and methods to eliminate static electricity using ionization devices are mainly being proposed. Ionization devices generate positive and negative ions and release them into the air using a fan or compressed air, and the released ions neutralize the charged particles by providing ion particles opposite to the charged particles of the substrate where static electricity is generated, thereby eliminating static electricity.

[0005] However, conventional ionization devices for electrostatic discharge release ions into the air in a non-vacuum environment, which presents a problem in that they are difficult to apply in vacuum environments where high cleanliness must be maintained. Conventional electrostatic discharge processes involve two steps: forming a thin film of an electronic device in a vacuum environment, and then removing static electricity through a separate discharge process in a non-vacuum environment.

[0006] Conventional electrostatic discharge devices have limitations in preventing device damage caused by static electricity because the thin film process and the static discharge process are separated, making it impossible to immediately remove static electricity generated during thin film formation.

[0007] In addition, an ion sensor must be installed to verify the performance of such an electrostatic discharge device; conventionally, however, to monitor the discharge amount of the ion source, the ion sensor had to be installed directly inside the chamber for measurement.

[0008] Furthermore, in the case of non-contact ion sensors, miniaturization was difficult due to the high cost and large size of the measuring equipment, operation was difficult due to the complexity of use, and it was difficult to continuously measure ion quantities in real time. The problem to be solved

[0009] Against this backdrop, one objective of the present embodiment is to provide a technology capable of improving the aforementioned problem.

[0010] Another objective of the present embodiment is to provide a technology that minimizes the influence of the electrostatic removal device on a specific process performed within the chamber by minimizing the influence on the process conditions of the chamber.

[0011] Another objective of the present embodiment is to provide a technology that allows adding a device for electrostatic removal without replacing the existing chamber by minimizing modifications to the chamber.

[0012] Another objective of the present embodiment is to provide a technology capable of measuring and displaying ions generated by an ion source by incorporating a contact-type ion sensor unit on one side of the part where the chamber and the ion source are combined.

[0013] Another objective of the present embodiment is to provide technology for an ion source including a contact-type ion sensor that enables miniaturization and allows for easy verification of changes in the amount of ion generated continuously in real time. means of solving the problem

[0014] To achieve the aforementioned objective, one embodiment may provide an ion source comprising: an adapter that combines the chamber and the device so as not to allow external fluid to enter; an ion source in which an output portion communicates with the chamber through a through hole and forms ions in the internal space of the chamber by generating ions between the anode electrode and the cathode electrode using a voltage supplied from the source body to the anode electrode of the output portion; and a contact-type ion sensor portion that is integrally disposed on one side of the interior of the adapter and detects ions generated from the ion source in real time.

[0015] The above adapter may include a first connecting structure coupled to a through hole formed in one port of a vacuum chamber, and a second connecting structure coupled to a device having a cross-sectional area different from the cross-sectional area of ​​the through hole.

[0016] The chamber may include a service port for connecting to utilities and auxiliary devices, and a view port for visually observing the interior of the chamber.

[0017] The above vacuum state is 10 -3 ~ 10 -8 It could be an atmosphere greater than Torr.

[0018] The above second connecting structure can be combined with the above output unit.

[0019] The first connecting structure may include an output tube extension structure that extends an output tube formed inside a through-hole insertion structure and a port connecting structure that is coupled to one port of the chamber.

[0020] The above ions can be output such that the output direction is widened or narrowed by the output tube, and the output intensity can be adjusted.

[0021] The first connecting structure may further include a baffle connecting structure so that a baffle can be installed in the direction of the internal space of the chamber.

[0022] The output unit further includes an opening that is open on the side facing the chamber, and the chamber and the output unit may be connected through the opening.

[0023] The above cathode electrode may include a center cathode electrode located at the center of the opening and an edge cathode electrode located at the edge of the opening.

[0024] The above ion sensor unit may include a sensing unit that detects ions generated from the ion source, a controller that displays the ions detected by the sensing unit, a cable connecting the controller and the sensing unit, and a power unit that supplies power to the controller.

[0025] The above sensing unit may be cylindrical or have various shapes and may be positioned in the internal direction of the adapter.

[0026] The sensing unit may include a single or multiple holes formed in the direction of ion flow inside the adapter.

[0027] The above sensing unit can be coupled to the adapter by a bolting method through an ion sensor coupling unit formed by penetrating one side of the adapter.

[0028] The above sensing unit may be provided in alignment with a baffle connection structure disposed on one side of the first connection structure of the adapter.

[0029] The above controller can display the amount of ion detected as a numerical value when the sensing unit detects ions, and can display whether ions are generated in real time through an LED lamp.

[0030] One embodiment may provide an ion-forming device comprising: an ion source in which an output portion communicates with a chamber through a through hole and generates ions between an anode electrode and a cathode electrode using a voltage supplied from a source body to an anode electrode of the output portion, thereby forming ions in the internal space of the chamber; and a contact-type ion sensor portion comprising an ion sensor portion disposed on a path through which ions generated from the ion source travel and detecting ions generated from the ion source in real time.

[0031] The above ion sensor unit may include a sensing unit that detects ions generated from the ion source; a controller that displays the ions detected by the sensing unit; a cable connecting the controller and the sensing unit; and a power unit that supplies power to the controller.

[0032] The above ion sensor part may be positioned on the ion movement path formed between the ion source and the chamber among the coupling parts where the ion source is coupled with the chamber.

[0033] The above ion sensor unit can be fixed to at least one of the upper and lower sides of the ion's movement path.

[0034] The above ion sensor part may be positioned on the ion movement path formed in the direction of the interior of the chamber among the coupling parts where the ion source is coupled with the chamber.

[0035] The sensing unit may include a single or multiple holes formed in the same direction as the path in which the ion moves.

[0036] The above controller can display the amount of ion detected as a numerical value when the sensing unit detects ions, and can display whether ions are generated in real time through an LED lamp. Effects of the invention

[0037] As explained above, according to the present embodiment, there is an effect of improving the aforementioned problem.

[0038] In addition, according to the present embodiment, the influence on the process conditions of the chamber can be minimized so that the device for electrostatic removal can minimize its influence on a specific process performed within the chamber.

[0039] Furthermore, according to the present embodiment, modifications to the chamber can be minimized so that a device for electrostatic removal can be added without replacing the existing chamber.

[0040] In addition, according to the present embodiment, a contact-type ion sensor unit is integrated by incorporating it on one side of the part where the chamber and the ion source are combined, and a technology can be provided to measure and display the ions generated by the ion source.

[0041] Additionally, according to the present embodiment, technology for an ion source including a contact-type ion sensor that enables miniaturization and allows for easy verification of changes in the amount of ion generated continuously in real time can be provided.

[0042] The technical problems to be solved in this document are not limited to those mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art to which this invention belongs from the description below. Brief explanation of the drawing

[0043] Figure 1 is a drawing showing a chamber that performs a specific process in a vacuum. FIG. 2 is a diagram showing an ion source coupled to a chamber according to one embodiment. FIG. 3 is a diagram showing a side cross-section of an ion source according to one embodiment. FIG. 4 is a drawing showing a part of the upper surface of an ion source according to one embodiment. FIG. 5 is a diagram showing an ion source according to one embodiment coupled to a chamber through an adapter. FIG. 6 is a drawing showing an ion source according to one embodiment in which an output tube extension structure is coupled to a chamber through a long adapter. FIG. 7 is a cross-sectional view showing an ion source according to one embodiment coupled to a chamber through an adapter. FIG. 8 is a diagram showing the configuration of an ion forming device including an adapter according to one embodiment. FIG. 9 is a perspective view of an adapter according to one embodiment. Figure 10 is a diagram showing an ion source in which a contact-type ion sensor is arranged. Figure 11 is a diagram showing the ion sensor section. Figure 12 is a drawing showing a part of the sensing unit. FIG. 13 is a perspective view showing an ion sensor unit integrated and disposed on one side of the inside of the adapter. Specific details for implementing the invention

[0044] Hereinafter, some embodiments of the present invention will be described in detail with reference to the exemplary drawings. It should be noted that in assigning reference numerals to the components of each drawing, the same components are given the same reference numeral whenever possible, even if they are shown in different drawings. Furthermore, in describing the present invention, if it is determined that a detailed description of related known components or functions could obscure the essence of the invention, such detailed description is omitted.

[0045] In addition, terms such as first, second, A, B, (a), (b), etc., may be used when describing the components of the present invention. These terms are intended only to distinguish the components from other components, and the essence, order, or sequence of the components is not limited by the terms. Where it is stated that a component is "connected," "combined," or "connected" to another component, it should be understood that the component may be directly connected or connected to the other component, but that another component may also be "connected," "combined," or "connected" between each component.

[0046] FIG. 1 is a drawing showing a chamber that provides a space for performing a specific process on an object in a vacuum.

[0047] Referring to FIG. 1, a specific process can be performed on an object (1) in a high vacuum state inside the chamber (10).

[0048] In the field of process technology, 10 -3 ~ 10 -9 The pressure range of Torr is understood as a high vacuum state. In a high vacuum state, most air molecules are removed, and collisions between ordinary gases and gas molecules may rarely occur. In addition to the high vacuum state, it can be classified into medium vacuum and low vacuum states, with the medium vacuum state generally ranging from 1 to 10 -3 It is understood that the pressure range of Torr corresponds to this, and the low vacuum state can be understood as a pressure range of 1 Torr at atmospheric pressure. The medium vacuum state is understood to be suitable for evaporation, dryers, and some coating processes, and the low vacuum state is known for commercial uses such as vacuum cleaners and vacuum packaging machines.

[0049] It is known that various processes in the field of process technology are carried out under high vacuum conditions.

[0050] A representative example is high vacuum deposition technology. High vacuum deposition technology refers to a technique that forms a condensed thin film on the surface of a substrate by evaporating a precursor of the material to be deposited into a gaseous state in a vacuum atmosphere. This process can be used as a method to transfer material from one surface to the surface of an object, and it is also called high vacuum deposition because it is performed in a high vacuum state. High vacuum deposition technology can be used in semiconductor manufacturing, optical coating, and the manufacturing processes of various sensors and electronic devices, and it can be used to extremely purify materials or obtain very thin coatings. Well-known high vacuum deposition methods include Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD). PVD may involve a process of evaporating the material by a physical method and transporting the vapor over the object, while CVD may involve a process of converting the material to be deposited into a gaseous form, placing the gas over the object (1), and then inducing a chemical reaction for deposition.

[0051] Physical vapor deposition (PVD) includes processes such as evaporation, sputtering, and ion plating, while chemical vapor deposition (CVD) includes processes such as APVD, LPCVD, PECVD, HDPCVD, and ALCVD.

[0052] A specific process performed inside a chamber (10) according to one example of the present invention may include at least one of a vacuum PVD (Physical Vapor Deposition) and a vacuum CVD (Chemical Vapor Deposition) process, preferably a vacuum PVD (Physical Vapor Deposition), and more preferably a vacuum evaporation method.

[0053] Additionally, an organic deposition process can be performed on the target object (1) inside the chamber (10). In the case of an organic deposition process, the process generally tends to be carried out in a high vacuum state. In an organic deposition process, it is necessary to maintain a constant purity of the organic material, and since interactions with other gases are minimized in a high vacuum state, it may be more advantageous to maintain the purity of the organic material. Furthermore, in a high vacuum state, a high-quality coating with a desired thickness and structure can be produced, and this characteristic can also be advantageous in the organic deposition process. In addition, the fact that molecules can move in a straight line from the source to the target object (1) in a unidirectional manner in a high vacuum state, and that the deposition efficiency is high because there are fewer collisions or reactions with other gases in a high vacuum state, are also reasons why a process in a high vacuum state is used in the organic deposition process.

[0054] A device for maintaining a high vacuum state may be connected to or included in the chamber (10). For example, a vacuum pump may be connected to the chamber (10) to create and maintain a vacuum state by removing gas from within the chamber (10), and a vacuum gauge may be included to continuously monitor and measure the pressure within the chamber (10).

[0055] Meanwhile, the chamber (10) is not limited to a process chamber and may include a non-process chamber and various chambers operated in a vacuum state.

[0056] For a specific process within the chamber (10), a plurality of ports (20, 30, 40) may be formed in the chamber (10).

[0057] A process port (40) may be formed in the chamber (10). The process port (40) may be a connection point directly related to a specific process performed in the chamber (10). Gas, liquid, or material required for a specific process may be delivered into the chamber (10) through the process port (40). Alternatively, a device for measuring or analyzing the state inside the chamber (10) in relation to the performance of a specific process may be connected to the process port (40). The process port (40) may be custom-designed to meet the requirements of a specific process and is likely to be limited to other uses. The process port (40) may be, for example, a port for supplying reaction gases in chemical vapor deposition, a port for supplying target materials in physical vapor deposition, etc.

[0058] A service port (20) may be formed in the chamber (10). The service port (20) may be a connection point related to the maintenance and management of the chamber (10). The service port (20) may be used to connect utilities and auxiliary devices such as a vacuum pump, a cooling system, a power supply, a vacuum gauge, etc.

[0059] A view port (30) may be formed in the chamber (10). A manager can directly observe the process conditions inside the chamber (10) visually through the view port (30). Alternatively, a management device (e.g., a camera or other optical device) may be connected to the view port (30) so that the manager can remotely monitor the process conditions inside the chamber (10). The viewing window included in the view port (30) may be made of materials such as reinforced glass, ceramic, industrial diamond, quartz, industrial sapphire, and reinforced plastic. These materials can withstand extreme environments such as high vacuum and high temperature and may have high optical transparency. Additionally, the view port (30) may have a sealing structure to prevent vacuum leakage so as not to affect the high vacuum state inside the chamber (10).

[0060] In FIG. 1, the service port (20) is shown positioned higher than the view port (30), but is not limited thereto, and the service port (20) and the view port (30) may be positioned at different locations.

[0061] A specific process may be carried out within a chamber (10) containing such structures and devices, at which time, static electricity may be formed on the object (1).

[0062] Static electricity formed on the object (1) can have various causes. For example, static electricity may be formed due to friction between the object (1) and another object, static electricity may be formed on the object (1) due to an unbalanced charge distribution caused by deposition or etching processes in a specific process step, or static electricity may be formed and further accumulated due to the obstruction of charge movement by an insulating layer placed on the object (1).

[0063] Such static electricity may form a sufficiently high voltage, which may damage the fine structure of the object (1), generate a force that attracts or pushes fine particles within the chamber (10) to the object (1), causing defects in the process, and may affect the electrical characteristics of the object (1), thereby degrading the overall performance of the process device.

[0064] To solve these problems, embodiments of the present specification provide an ion-forming device for removing static electricity within a chamber (10), particularly static electricity formed on an object (1). This ion-forming device minimizes the influence on the process conditions of the chamber (10) so that the ion-forming device does not affect a specific process performed within the chamber (10), and minimizes modifications to the chamber (10) so that the ion-forming device can be added without replacing the existing chamber (10).

[0065] The ion forming device can form ions in the internal space of the chamber (10) by utilizing the high vacuum state of the chamber (10) without supplying additional process gas.

[0066] An ion-forming device includes an ion source, and an electric field can be formed between electrodes placed in the ion source. Electrons detached from one of the electrodes of the ion source are accelerated and output within the electric field between the electrodes. The accelerated electrons collide with gas molecules in a high vacuum state within the chamber (10) and ionize these gas molecules to form a number of ions. Then, as these ions move toward the object (1), static electricity formed on the object (1) can be removed. This phenomenon in a high vacuum state is sometimes called Townsend discharge, but the present invention is not limited thereto.

[0067] Since this ion-forming device does not supply additional process gas and does not include a separate vacuum device, it can minimize the impact on the process conditions of the chamber (10). Furthermore, since this ion-forming device does not supply additional process gas and does not include a separate vacuum device, it is possible to simplify the configuration and minimize modifications to the chamber (10).

[0068] The ion source can be coupled to a service port (20) or a view port (30) to minimize modifications to the chamber (10).

[0069] FIG. 2 is a diagram showing an ion source according to one embodiment being coupled to a chamber.

[0070] Referring to FIG. 2, the ion forming device (200) may include an ion source (210) and a viewport coupling structure (220). The viewport coupling structure (220) may be a device that supports the ion source (210) being coupled to the viewport (30).

[0071] The viewport coupling structure (220) may include a first area in which a viewing window is positioned for an observer to visually observe the internal space of the chamber (10), and a second area in which a through hole is positioned for coupling an ion source (210). The first area and the second area may be fixed to the chamber (10) through a viewport coupling frame.

[0072] The viewing window placed in the first area may have rounded corners to be tightly coupled with the first area.

[0073] The first region includes a first-1 region in which a first viewing window is positioned for observing one side of the internal space of the chamber (10) and a second-1-2 region in which a second viewing window is positioned for observing the other side of the internal space of the chamber (10), and the first-1 region and the first-2 region may be located on opposite sides of each other. Additionally, the first-1 region and the first-2 region may include a viewing window coupling frame for fixing the viewing window to the chamber (10).

[0074] A second region may be provided between the first-1 region and the first-2 region. Additionally, the second region may include an adapter for connecting the ion source (210) to the through hole. Here, the adapter may include a first connecting structure connected to the through hole and a second connecting structure connected to the output portion of the ion source (210). Furthermore, the through hole and the output portion of the ion source (210) may have different cross-sectional sizes.

[0075] Additionally, the ion forming device (200) may include a service port coupling structure (not shown) instead of a view port coupling structure (220). The service port coupling structure (not shown) may be a device that supports the coupling of the ion source (210) to the service port (20). According to one embodiment, the service port coupling structure (not shown) may not be separately provided, and a part of the ion source (210) may perform the function of the service port coupling structure (not shown).

[0076] Furthermore, the ion forming device (200) may further include means for controlling the output direction of the ions so that the ions can be formed in the direction of the object (1) on which a specific process is performed.

[0077] The ion forming device (200) may include an adapter connecting one port of the chamber (10) and an ion source (210), and the adapter may include a first connecting structure coupled to a through hole formed in one port of the chamber and a second connecting structure coupled to an output portion where an anode electrode is exposed. Here, the through hole coupled to the first connecting structure and the output portion coupled to the second connecting structure may have different cross-sectional sizes.

[0078] The first connecting structure may include a through-hole insertion structure provided in the direction of the internal space of the chamber (10) and inserted into the through-hole, and an output tube extension structure that extends an output tube formed inside the through-hole insertion structure. Here, the outer diameter of the through-hole insertion structure may be the same as the inner diameter of the through-hole so that the through-hole insertion structure can be inserted into the interior of the through-hole and in contact with it.

[0079] Meanwhile, the ions are output so that their output direction is widened or narrowed by the output tube, allowing the output intensity to be controlled.

[0080] The first connecting structure and the second connecting structure may have a plurality of holes capable of connecting a coupling member. Additionally, the first connecting structure may include a sealing member made of a flexible material disposed on a surface facing the through hole, and the second connecting structure may include a sealing member made of a flexible material disposed on a surface facing the output part.

[0081] The ion source (210) may include a source body (211) and an output unit (212).

[0082] The source body (211) may include a power supply. The power supply can supply a specific voltage to an electrode placed at the output section (212). Here, the specific voltage may be a high voltage, or a voltage corresponding to hundreds to thousands of volts. The power supply can receive a high voltage from the outside through a cable and supply it to the electrode, or it can receive a voltage having a voltage level lower than the high voltage from the outside, raise the voltage level through power conversion, and then supply it to the electrode.

[0083] The source body (211) may be surrounded by a metal case to prevent electromagnetic waves generated from a power supply unit, etc., from propagating to the outside, including the chamber (10).

[0084] The output section (212) may have the side facing the service port (20) open, while the other side may be closed. The output section (212) may be in communication with the internal space of the high-vacuum chamber (10) through the service port (20) and may not be in communication with any other space. For example, the output section (212) may not be in communication with the source body (211) and may not be in direct communication with the external space of the chamber (10).

[0085] The internal space of the chamber (10) is in a high vacuum state (e.g., 10 -3 ~ 10 -9 It is torr, and preferably 10 -5 ~ 10 -9 When maintained at torr, the output unit (212) connected thereto can also maintain an internal atmosphere in a high vacuum state. Therefore, since the ion forming device according to one embodiment does not supply additional process gas and does not include a separate vacuum device, the influence on the process conditions of the chamber (10) can be minimized. Furthermore, since the ion forming device according to one embodiment does not supply additional process gas and does not include a separate vacuum device, the configurations can be simplified, thereby minimizing modifications to the chamber (10).

[0086] When the source body (211) provides a specific voltage to the electrode of the output unit (212) in such a high vacuum atmosphere, ions can be formed in the internal space of the high vacuum chamber (10).

[0087] The ions formed in the internal space of the chamber (10) can neutralize the object (1) while in contact with the object (1).

[0088] The internal space of the chamber (10) and the output section is connected to each other 10 -3 ~ 10 -9 It can share a vacuum state of torr, preferably 10 -5 ~ 10 -9It can share a vacuum state of torr.

[0089] In the chamber (10), a specific process requiring a vacuum can be performed. Here, the specific process may include at least one of a vacuum PVD (Physical Vapor Deposition) and a vacuum CVD (Chemical Vapor Deposition) process for depositing a material on a target object (1). Additionally, the specific process may further include a vacuum process for depositing an organic material on a target object. To perform this specific process, the chamber (10) can maintain a vacuum state.

[0090] The above vacuum state is 10 -3 ~ 10 -9 It may be torr, preferably 10 -5 ~ 10 -9 It could be Torr.

[0091] Since the internal space of the chamber (10) and the output section are connected to each other, a vacuum pump and an ionization gas injection device may not be required.

[0092] The chamber (10) may include a service port (20) for connecting to a utility and auxiliary device and a view port (30) for visually observing the inside of the chamber.

[0093] The output section (212) further includes an opening that is open on the side facing the service port (20) or view port (30), and the chamber (10) and the output section (212) may be connected through the opening. Specifically, the chamber (10) and the output section (212) may be connected through a coupling portion provided at the edge of the opening.

[0094] The coupling part includes at least one selected from the group consisting of a service port coupling structure (not shown), a view port coupling structure (220), a case coupling part, a coupling member, and a sealing member, and through the coupling part, the chamber (10) and the output part (212) are tightly coupled so that fluid inflow from the outside can be blocked.

[0095] FIG. 3 is a drawing showing a side cross-section of an ion source according to one embodiment, and FIG. 4 is a drawing showing a part of the top surface of an ion source according to one embodiment.

[0096] Referring to FIGS. 3 and 4, the ion source (210) may include a source body (211) and an output unit (212).

[0097] The output section (212) may include an anode electrode (310), a cathode electrode (320), an output case (330), etc.

[0098] The output case (330) may have a structure in which the side facing the service port (20) or view port (30) is open, and the other side is closed. The output case (330) may form a space inside in which an anode electrode (310) and a cathode electrode (320) are seated, and may be formed such that one side is open and the other side is closed so that this space communicates with the internal space of a chamber in a high vacuum state.

[0099] The output case (330) may include a case joint (331) formed parallel to the chamber frame, and the case joint (331) may be tightly coupled to the chamber frame through a viewport coupling structure (220) so that the interior of the output case (330) cannot be directly communicated with the external space of the chamber. A coupling member (332), such as a bolt, may be used to tightly coupling the case joint (331) to the chamber frame, and a sealing member, such as an O-ring, may be further disposed on the coupling surface.

[0100] An anode electrode (310) and a cathode electrode (320) can be seated in the space formed inside the output case (330).

[0101] The cathode electrode (320) may include a center cathode electrode (322), an edge cathode electrode (324), and a cathode electrode connection part (326), etc. The center cathode electrode (322) may be located at the center of the opening of the output case (330). When viewed from the side of the viewport (30), the center cathode electrode (322) may be located at the center of the opening of the viewport (30). An edge cathode electrode (324) may be located at the edge of the opening of the output case (330). The edge cathode electrode (324) may be formed along the edge of the opening of the output case (330), and if the opening is circular, the edge cathode electrode (324) may also be in the shape of a circular—a hollow donut shape.

[0102] The central cathode electrode (322) and the edge cathode electrode (324) can be electrically connected by the cathode electrode connection part (326) and can have the same potential. A magnet may be further placed inside the cathode electrode connection part (326), the central cathode electrode (322), or the edge cathode electrode (324). The magnetic field generated by this magnet can influence the movement of electrons emitted from the cathode electrode (320), thereby controlling the direction of movement or the speed of movement of the electrons.

[0103] A power supply unit placed in the source body (211) can supply a specific voltage to the anode electrode (310). Then, an electric field is formed between the anode electrode (310) and the cathode electrode (320) according to this specific voltage, and ions can be formed in the internal space of the chamber by this electric field.

[0104] The output section (212) may not have a separate cooling device or a separate process gas supply device. In the prior art, a separate cooling device coupled to the anode electrode may be attached to cool the anode electrode, but in the ion source (210) according to one embodiment, since a high vacuum atmosphere is used, power consumption is low and consequently, the amount of heat generated is low, so a separate cooling device may not be necessary. Also, in the prior art, a device for supplying a separate process gas to form ions may be included, but in the ion source (210) according to one embodiment, since a high vacuum atmosphere is used, ions can be formed without additionally supplying a separate process gas.

[0105] The cathode electrode (320) includes a first cathode electrode disposed on one side of the edge of an opening that is open toward the chamber (10), a third cathode electrode disposed on the other side of the edge of the opening, and a second cathode electrode disposed at the center of the opening, and the direction of ion output can be determined by the electrode spacing between the anode electrode (310) and the cathode electrode (320).

[0106] The ion source (210) can be coupled to a port other than the port used in a specific process. Specifically, the ion source (210) can be coupled to a service port (20) or a view port (30). The service port (20) and the view port (30) can be located at different heights from the object (1). Therefore, it is necessary to control the output direction of the ions output from the ion source (210).

[0107] The electrode spacing may include a first electrode spacing between the anode electrode (310) and the first cathode electrode, a second electrode spacing between the anode electrode (310) and the second cathode electrode, and a third electrode spacing between the anode electrode (310) and the third cathode electrode.

[0108] Here, the lengths of at least two selected from the first electrode gap, the second electrode gap, and the third electrode gap may be different from each other. Through this, ions can be output by bending toward the direction in which the cathode electrode having the shortest electrode gap among the first electrode gap, the second electrode gap, and the third electrode gap is located.

[0109] Additionally, the object (1) may be positioned spaced apart from the ion source (210), and the object (1) may be positioned on an extension line in the direction in which the cathode electrode having the shortest electrode spacing among the first electrode spacing, the second electrode spacing, and the third electrode spacing is located.

[0110] Preferably, the length of the first electrode gap may be the longest and the length of the third electrode gap may be the shortest. Through this, ions can be output by bending toward the direction where the third cathode electrode is located.

[0111] Additionally, the object (1) may be positioned spaced apart from the ion source (210) and may be positioned on an extension line toward the direction in which the third cathode electrode is located.

[0112] The ion generating device (200) can determine the output direction of ions by the shape of the edge cathode electrode (324).

[0113] The edge cathode electrode (324) may have a cylindrical shape in which part of the edge is tapered and the remaining edge has a constant thickness. Specifically, the tapered portion of the edge cathode electrode (324) may be formed such that the edge facing the output portion (212) has a constant thickness, and part of the edge facing the chamber (10) is thin. Accordingly, ions can be output in the direction in which the tapered portion of the edge cathode electrode (324) faces. In addition, the degree of ion spreading may be determined according to the angle of inclination of the tapered portion of the edge cathode electrode (324).

[0114] Additionally, the edge cathode electrode (324) has a cylindrical shape, and its inner diameter may increase as it moves toward the chamber (10). Therefore, due to the shape of the edge cathode electrode (324), the ions can be output to spread out in a trumpet shape.

[0115] Meanwhile, the edge cathode electrode (324) may have a plurality of coupling grooves arranged in a direction toward the output section (212).

[0116] The output section (212) may further include a porous baffle, and the porous baffle may be positioned on one side of the cathode electrode (320) in a direction in which ions are output, thereby preventing ions from being strongly directed directly onto the object (1). Specifically, the porous baffle may be positioned on one side of the central cathode electrode (322) in a direction in which ions are output, so that ions can be formed on the entire surface of the object (1) by spreading the ions.

[0117] Ions are accelerated by a magnetic field generated between the electrode gaps and output between the central cathode electrode (322) and the edge cathode electrode (324), and by placing a porous baffle on one side of the central cathode electrode (322), the obstruction to the flow of output ions can be minimized.

[0118] The porous baffle is disposed on one side of the central cathode electrode (322), and may be located at the center or edge of the central cathode electrode (322), and preferably may be located at the center of the central cathode electrode (322).

[0119] The porous baffle can be formed in circular, rectangular, conical, and polygonal shapes having at least one groove. In this case, ions can also be emitted in the direction of the groove.

[0120] The ion forming device (200) may further include an ion concentration measuring unit for measuring an ion concentration at a location within the internal space of the chamber (10), and the ion concentration measuring unit may be positioned within the internal space of the chamber (10) through a support extending in the direction of the internal space of the chamber (10).

[0121] Meanwhile, the ion forming device (200) may include an adapter connecting one port of the chamber (10) and an ion source (210), and the adapter may include a first connecting structure coupled to a through hole formed in one port of the chamber and a second connecting structure coupled to an output part (212) in which an anode electrode (310) is exposed.

[0122] The ion concentration measuring unit is connected to an ion source control device located outside the chamber (10) via a monitoring cable, and the monitoring cable can be positioned to penetrate one side of the first connecting structure of the adapter.

[0123] The ion forming device (200) can be controlled by a method of controlling the amount of ions generated from the ion forming device (200) by measuring the ion concentration at one location in the internal space of the chamber (10) through an ion concentration measuring unit disposed in the internal space of the chamber (10), and adjusting the voltage level supplied from the source body (211) to the anode electrode (310) according to the measured ion concentration.

[0124] If the measured ion concentration is below the reference concentration, the voltage level supplied from the source body (211) to the anode electrode (310) can be increased to increase the amount of ions generated. On the other hand, if the measured ion concentration exceeds the reference concentration, the voltage level supplied from the source body (211) to the anode electrode (310) can be returned to the initial value to decrease the amount of ions generated.

[0125] The voltage supplied to the anode electrode (310) may be in the form of a pulse having a specific period.

[0126] Since pulsed voltage is a form in which voltage is applied and then cut off at regular intervals, it can improve the efficiency of ion generation compared to continuous direct current (DC) voltage. This helps to reduce the load on the electrode and increase ionization efficiency by preventing excessive charge from accumulating on the electrode surface during the ionization process.

[0127] In addition, using pulsed voltage reduces heat generation compared to continuous voltage application because the power supplied to the electrode is intermittent. This helps maintain the electrode temperature at a low level, thereby reducing the need for additional cooling.

[0128] Furthermore, the output unit (212) can suppress internal heat generation by sharing a high vacuum state with low air density, and since heat convection is almost non-existent due to the low air density, heat generation caused by heat transfer can also be suppressed, so heat generation can be further suppressed by utilizing it simultaneously with the use of a pulse-shaped voltage. Therefore, electrostatic discharge can be effectively performed without the need for a separate cooling device.

[0129] FIG. 5 is a diagram showing an ion source according to one embodiment coupled to a chamber through an adapter, FIG. 6 is a diagram showing an ion source according to one embodiment coupled to a chamber through an adapter with an output tube extension structure, FIG. 7 is a cross-sectional view showing an ion source according to one embodiment coupled to a chamber through an adapter, FIG. 8 is a configuration diagram of an ion forming device including an adapter according to one embodiment, and FIG. 9 is a perspective view of an adapter according to one embodiment.

[0130] Referring to FIGS. 5 to 9, an ion source (210) in an ion forming device (200) can be connected to one port of a chamber (10) via an adapter (227). Here, one port of the chamber (10) can be a port that does not directly participate in the process, and specifically, one port of the chamber (10) can be a service port (20) or a view port (30).

[0131] The ion source (210) is connected via an adapter (227), and a baffle (340) may be installed on one side of the adapter (227) in a direction facing the chamber (10). Accordingly, ions output from the output section are output to spread through the baffle (340), thereby preventing direct irradiation of the object (1) and allowing the ions to spread over the entire surface of the object (1), so that static electricity can be effectively removed.

[0132] Meanwhile, on one side of the adapter (227), a baffle connection part (341) is provided so that the baffle (340) can be spaced apart from the adapter (227), and the baffle (340) and the adapter (227) can be connected through the baffle connection part (341).

[0133] When the length of the output tube extension structure (228b) of the adapter (227) is short, the output ions may have fewer collisions between ions or between ions and internal gas molecules, so the output strength may be strong. However, when the length of the output tube extension structure (228b) of the adapter (227) is long, the output ions may have many collisions between ions or between ions and internal gas molecules, so the output strength may be weak. In other words, the output strength of the output ions can be adjusted through the length of the output tube extension structure (228b) of the adapter (227).

[0134] The adapter (227) may include a first connecting structure (228) coupled to a through hole (226) formed in one port of the chamber (10) and a second connecting structure (229) coupled to an output portion (212) where an anode electrode (310) is exposed. Here, the one port of the chamber (10) coupled to the first connecting structure (228) of the adapter (227) may not be a port that directly participates in a specific process, and specifically may be a service port (20) or a view port (30).

[0135] The through hole (226) coupled to the first connecting structure (228) may have a different cross-sectional size from the output part (212) coupled to the second connecting structure (229). For example, the size of the output part (212) may be larger or smaller than the through hole (226). Therefore, an adapter (227) may be used to tightly connect the through hole (226) and the output part (212) having different cross-sectional sizes. Through this, the chamber (10) and the ion forming device (200) can be tightly connected to each other without any separate modifications.

[0136] The first connecting structure (228) may include a through-hole insertion structure (228a) provided in the direction of the internal space of the chamber (10) and inserted into the through-hole (226), an output tube extension structure (228b) extending an output tube formed inside the through-hole insertion structure (228a), and a port connecting structure (228c) coupled to one port of the chamber (10). That is, one port of the chamber (10) can be tightly coupled through the port connecting structure (228c), and ions can be output to the chamber (10) through the internal space of the through-hole insertion structure (228a) and the output tube extension structure (228b).

[0137] The through hole insertion structure (228a) may have an outer diameter equal to the inner diameter of the through hole (226) so that it can be inserted into the interior of the through hole (226) and be in contact with it. Therefore, the through hole insertion structure (228a) can be tightly coupled with the through hole (226) to prevent external fluid from entering, and the durability of the connection portion of the adapter (227) and one port of the chamber (10) can be increased.

[0138] The output intensity of ions can be controlled by widening or narrowing the output direction through the output tube.

[0139] As an example, if the diameter of the through hole (226) is smaller than the diameter of the output section (212), the diameter of the output tube formed in the internal space of the through hole insertion structure (228a) and the output tube extension structure (228b) of the first connecting structure (228) connected to the through hole (226) may be formed to be smaller than the diameter of the output section (212) within the ion source (210). Accordingly, the ions output from the output section (212) can be output strongly as the amount of ions output per unit area increases due to the through hole being smaller than the diameter of the output section (212).

[0140] As another example, if the diameter of the through hole (226) is larger than the diameter of the output section (212), the diameter of the output tube formed in the internal space of the through hole insertion structure (228a) and the output tube extension structure (228b) of the first connecting structure (228) connected to the through hole (226) may be formed to be larger than the diameter of the output section (212) within the ion source (210). Accordingly, the ions output from the output section (212) may be output weakly as the amount of ions output per unit area is reduced due to the through hole being larger than the diameter of the output section (212).

[0141] Ions are output through the output section (212), pass through a passage narrowed by the diameter of the edge cathode electrode (324) via the second connecting structure (229), and pass through an even narrower passage via the first connecting structure (228). That is, as the ions pass through the adapter (227), the output passage can gradually narrow, and the output strength of the ions can increase as the passage narrows. Meanwhile, as described above, the output direction of the ions can be widened by the output tube.

[0142] The first connecting structure (228) and the second connecting structure (229) may have multiple holes capable of connecting a connecting member (332), such as a bolt. Specifically, the port connecting structure (228c) of the first connecting structure (228) may have multiple holes spaced at regular intervals along the edge to be connected to one port of the chamber (10). Additionally, the second connecting structure (229) may also have multiple holes spaced at regular intervals along the edge to be connected to the output section (212).

[0143] The first connecting structure (228) may include a first sealing member made of a flexible material disposed on a surface facing the through hole (226), and the second connecting structure (229) may include a second sealing member made of a flexible material disposed on a surface facing the output part (212). Specifically, the port connecting structure (228c) of the first connecting structure (228) may include a first sealing member made of a flexible material disposed on a surface facing the through hole (226) to be tightly coupled with one port of the chamber (10). Additionally, the second connecting structure (229) may also include a second sealing member made of a flexible material disposed on a surface facing the output part (212) to be tightly coupled with the output part (212). Through this, the ion forming device (200) can be tightly coupled to the chamber (10) to prevent the inflow of external fluid and maintain the internal space in a vacuum state.

[0144] The first connecting structure (228) may further include a baffle connecting structure (228d) so that a baffle (340) can be installed in the direction of the internal space of the chamber (10).

[0145] The baffle connecting structure (228d) may be positioned on one side of the through-hole insertion structure (228a) to allow the baffle (340) to be installed. Specifically, the baffle connecting structure (228d) may be positioned on one side of the edge of the through-hole insertion structure (228a) so as not to obstruct the direction of travel of ions output through the through-hole (226). The baffle connecting structure (228d) may be joined to the baffle connecting part (341) by means such as welding and screw fastening. If necessary, the baffle connecting structure (228d) may be provided in multiple units spaced apart at regular intervals on the edge of the through-hole insertion structure (228a) to allow the installation of multiple baffles (340).

[0146] The baffle (340) is formed in a circular, rectangular, conical, or polygonal shape having at least one baffle groove, and ions can be output in the direction of the baffle groove. Specifically, the output direction and output intensity of ions can be controlled by outputting a large amount of ions in the direction of the baffle groove formed in the baffle (340) and outputting a small amount of ions in the direction without the baffle groove.

[0147] The baffle (340) and the baffle connecting structure (228d) can be connected through the baffle connecting part (341) so that they can be positioned apart from each other.

[0148] The baffle connection part (341) may include a baffle connection length adjustment part that can adjust the length to control the degree of ion spreading. For example, if the length of the baffle connection part is short, the ions can spread more widely, and if the length of the baffle connection part is long, the ions can spread more narrowly.

[0149] Additionally, a tilting unit capable of adjusting the installation angle of the baffle (340) may be located at the part where the baffle connection part (341) and the baffle (340) are connected. Through this, the angle of the baffle (340) can be adjusted so that ions can be output in the direction of the target object (1).

[0150] That is, by controlling the installation angle of the baffle (340) so that ions are output toward the object (1), and so that the ions are spread through the baffle (340) without being directly irradiated onto the object (1), static electricity generated on the object (1) can be effectively removed without damaging the object (1).

[0151] The degree of ion spreading and output strength can be controlled according to the cross-sectional area of ​​the baffle (340). Specifically, when the cross-sectional area of ​​the baffle (340) is small, the degree of ion spreading is small and the output strength can be strong. However, when the cross-sectional area of ​​the baffle (340) is large, the degree of ion spreading is large and the output strength can be weak.

[0152] FIG. 10 is a drawing showing an ion source in which a contact-type ion sensor part is arranged, FIG. 11 is a drawing showing the ion sensor part, FIG. 12 is a drawing showing a part of the sensing part, and FIG. 13 is a perspective view showing an ion sensor part integrated and arranged on one side of the inside of an adapter.

[0153] Referring to FIGS. 10 to 13, an ion sensor unit (410) according to one embodiment may include a sensing unit (411) that detects ions generated from an ion source (210) in real time, a controller (415) that displays ions detected by the sensing unit (411), a cable (416) that connects the controller (415) and the sensing unit (411), and a power unit (417) that supplies power to the controller (415).

[0154] The sensing unit (411) can detect ions generated from the ion source (210) in real time. Referring to A in FIG. 10, the ions generated from the ion source (210) come into direct contact with the area around the sensing unit (411), allowing for real-time verification of whether ions are being generated. By utilizing a contact-type ion sensor in this manner, it is possible to determine more accurately and directly whether ions are being generated by the ion source (210), thus eliminating the need for large equipment and enabling miniaturization.

[0155] The sensing part (411) may be cylindrical in shape. However, it is not limited thereto, and the shape of the sensing part (411) may vary, but a shape that does not interfere with the flow direction of ions formed by the ion source (210) may be preferred.

[0156] Additionally, the sensing unit (411) is positioned in the internal direction of the adapter (227) so that the ions formed by the ion source (210) come into direct contact, thereby allowing the performance of the ion source (210) to be evaluated more accurately.

[0157] The sensing part (411) may include a single or multiple holes formed in the direction of ion flow inside the adapter (227). Referring to FIG. 10, a single hole is formed in the sensing part (411), but it is not limited thereto and may include multiple holes.

[0158] In the sensing part (411), a single or multiple holes may be formed to increase the surface area where artificial charges are formed while not interfering with the flow of ions formed by the ion source (210).

[0159] The sensing unit (411) is connected to the controller (415) by a cable connection unit (414) connected to the cable (416) and can be combined with an insulating unit. Through the insulating unit, the sensing unit (411) can be electrically insulated from the adapter (227), etc., and can directly detect ions generated from the ion source (210). In addition, the sensing unit (411) can be stably combined with the adapter (227) by an ion sensor coupling unit.

[0160] The sensing unit (411) can be coupled to the adapter (227) by a bolting method through an ion sensor coupling part formed by penetrating one side of the adapter (227). In this way, since it is coupled to the adapter (227) by a bolting method, the coupling direction and position of the sensing unit (411) can be freely determined if necessary. Specifically, since the sensing unit (411) is placed inside the adapter (227), it is necessary to position it so as not to obstruct the flow of ions formed by the ion source (210). By coupling the adapter (227) and the sensing unit (411) by a bolting method, the sensing unit (411) can be positioned so as not to obstruct the flow of ions. That is, the sensing unit (411) can be coupled to the adapter (227) by a bolting method so that the single or multiple holes formed in the sensing unit (411) do not obstruct the flow of ions.

[0161] Meanwhile, the sensing unit (411) may be provided on the same line as the baffle connecting structure (228d) positioned on one side of the first connecting structure (228) of the adapter (227). Ions formed by the ion source (210) flow inside the adapter (227), but if protrusions are formed in various directions inside the adapter (227), the flow may be obstructed. Therefore, the sensing unit (411) and the baffle connecting structure (228d) may be provided on the same line so that the protrusions formed inside the adapter (227) can be in a single direction.

[0162] The voltage supplied to the anode electrode (310) may be in the form of a pulse having a specific period. This pulse-shaped voltage may be formed by a pulse signal transmitted to the source body (211).

[0163] A pulse signal can be generated such that at least one of the pulse application time, pulse frequency, and pulse duty cycle is adjusted according to the ion concentration in the internal space of the chamber (10). Here, the ion concentration in the internal space of the chamber (10) can be measured by an ion concentration measuring unit positioned in the direction of the internal space of the chamber (10).

[0164] The pulse application time refers to the time when a pulse signal is generated to form a pulse-shaped voltage, the pulse frequency refers to the number of pulse repetitions per second, and the pulse duty cycle refers to the ratio of the time during which the voltage is applied to the total period.

[0165] When the ion concentration inside the chamber (10) is low, a pulse may be applied, or if a pulse is applied, the frequency of the pulse may be increased or the duty cycle of the pulse may be increased. On the other hand, when the ion concentration inside the chamber (10) is high, the application of the pulse may be stopped, or if a pulse is applied, the frequency of the pulse may be lowered or the duty cycle of the pulse may be lowered.

[0166] These pulse signals can be controlled by a control device located outside the chamber (10).

[0167] The ion concentration at one location within the chamber (10) is measured through an ion concentration measuring unit disposed within the chamber (10), and the amount of ions generated from the ion forming device (200) can be controlled by adjusting the voltage level supplied from the source body (211) to the anode electrode (310) according to the measured ion concentration.

[0168] Specifically, if the measured ion concentration is below the reference concentration, the voltage level supplied from the source body (211) to the anode electrode (310) can be increased to increase the amount of ions generated. That is, if the ion concentration formed in the internal space of the chamber (10) is below the reference concentration, it may be difficult to sufficiently remove static electricity present in the object (1). Therefore, the voltage level supplied from the source body (211) to the anode electrode (310) is increased to increase the amount of ions generated, and the concentration of ions generated in the internal space of the chamber (10) is increased to effectively remove static electricity present in the object (1).

[0169] Additionally, if the measured ion concentration is not below the reference concentration but exceeds the reference concentration, the voltage level supplied from the source body (211) to the anode electrode (310) can be returned to the initial value to restore or reduce the amount of ions generated. That is, if the concentration of ions formed in the internal space of the chamber (10) exceeds the reference concentration, it can be determined that the static electricity present in the object (1) is sufficiently removed. Therefore, the voltage level supplied from the source body (211) to the anode electrode (310) can be reset to restore or reduce the amount of ions generated, thereby lowering the concentration of ions generated in the internal space of the chamber (10) to prevent damage to the object (1) and reduce power consumption.

[0170] Terms such as "include," "compose," or "have" as described above, unless specifically stated otherwise, mean that the relevant component may be inherent; therefore, they should be interpreted as allowing for the inclusion of additional components rather than excluding them. All terms, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains, unless otherwise defined. Commonly used terms, such as those defined in advance, should be interpreted in accordance with their meaning in the context of the relevant technology and should not be interpreted in an ideal or overly formal sense unless explicitly defined in the present invention.

[0171] The foregoing description is merely an illustrative explanation of the technical concept of the present invention, and those skilled in the art to which the present invention pertains will be able to make various modifications and variations within the scope of the essential characteristics of the present invention. Accordingly, the embodiments disclosed in the present invention are intended to explain, not limit, the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by these embodiments. The scope of protection of the present invention shall be interpreted by the claims below, and all technical concepts within an equivalent scope shall be interpreted as being included within the scope of rights of the present invention. Explanation of the symbols

[0172] 1: Object 10: Chamber 20: Service port 30: Viewport 40: Process Port 200: Ion forming device 210: Ion source 211: Source body 212: Output section 220: Viewport connection structure 226: Through hole 227: Adapter 228: First connecting structure 228a: Through-hole insertion structure 228b: Output tube extension structure 228c: Port connection structure 228d: Baffle connection structure 229: Second connecting structure 310: Anode electrode 320: Cathode electrode 322: Center cathode electrode 324: Edge cathode electrode 326: Cathode electrode connection part 330: Output case 331: Case joint 332: Connecting member 340: Baffle 341: Baffle connection 410: Ion sensor section 414: Cable connection part 415: Controller 416: Cable 417: Power Division

Claims

Claim 1 An ion forming device comprising: an ion source in which an output portion communicates with a chamber through a through hole and generates ions between an anode electrode and a cathode electrode using a voltage supplied from a source body to an anode electrode of the output portion, thereby forming ions in the internal space of the chamber; and a contact-type ion sensor portion comprising an ion sensor portion disposed on a path through which ions generated from the ion source travel and detecting ions generated from the ion source in real time. Claim 2 An ion forming device comprising a contact-type ion sensor unit, wherein the ion sensor unit comprises: a sensing unit for detecting ions generated from the ion source; a controller for displaying ions detected by the sensing unit; a cable connecting the controller and the sensing unit; and a power unit for supplying power to the controller. Claim 3 An ion forming device according to claim 1, wherein the ion sensor part comprises a contact-type ion sensor part disposed on an ion movement path formed between the ion source and the chamber, among the coupling parts where the ion source is coupled with the chamber. Claim 4 In paragraph 3, the ion forming device includes a contact-type ion sensor unit that is fixed to at least one of the upper and lower sides of the ion movement path. Claim 5 An ion forming device according to claim 1, wherein the ion sensor part comprises a contact-type ion sensor part disposed on an ion movement path formed in the direction of the interior of the chamber among the coupling parts where the ion source is coupled with the chamber. Claim 6 In paragraph 2, the ion forming device includes a contact-type ion sensor unit, wherein the sensing unit comprises a single or multiple holes formed in the same direction as the path in which the ion moves. Claim 7 In paragraph 2, the ion forming device includes a contact-type ion sensor unit, wherein the controller can display the amount of ion detected as a numerical value when ions are detected by the sensing unit, and displays whether ions are generated in real time through an LED lamp.

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