Display apparatus

Abstract

The present invention provides a display device that facilitates high-definition. It also provides a display device with high display quality. The display device includes a pixel electrode, an EL layer, an upper electrode, a first insulating layer, a barrier, a color filter, and a transistor. The transistor is located below the pixel electrode and is connected to the pixel electrode. The first insulating layer has an end above the pixel electrode. The barrier is located above the first insulating layer. The EL layer contains a luminescent compound and is in contact with the upper surface of the pixel electrode and the upper surface of the first insulating layer. The upper electrode covers the upper surface and end of the EL layer and is in contact with the upper surface of the first insulating layer and the side of the barrier. The color filter is located above the upper electrode and the barrier, and its end overlaps with the barrier. The barrier has an inverse taper shape when viewed in cross-section and is conductive. Additionally, when viewed in planar view, there is a gap between the end of the first insulating layer and the barrier.

Description

Technology Field

[0001] One embodiment of the present invention relates to a display device. One embodiment of the present invention relates to a method for manufacturing a display device.

[0002] Furthermore, one embodiment of the present invention is not limited to the technical field described above. Examples of the technical field of one embodiment of the present invention disclosed in this specification, etc. include semiconductor devices, display devices, light-emitting devices, capacitor devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, methods for driving the same, or methods for manufacturing the same. A semiconductor device refers to any device capable of functioning by utilizing semiconductor characteristics. Background Technology

[0003] In recent years, there has been a demand for higher resolution in display panels. Devices requiring high-resolution display panels include, for example, smartphones, tablet terminals, and laptop computers. Additionally, stationary display devices such as televisions and monitors are also required to be high-resolution due to the trend toward higher resolutions. Furthermore, devices requiring the highest level of resolution include, for example, Virtual Reality (VR) devices and Augmented Reality (AR) devices.

[0004] In addition, representative display devices that can be used in display panels include liquid crystal display devices, light-emitting devices including organic EL (Electro-Luminescence) elements or light-emitting diodes (LEDs), and electronic paper that performs display using electrophoretic methods.

[0005] For example, an organic EL device basically has a configuration in which a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. By applying voltage to this device, light emission can be obtained from the light-emitting organic compound. Since a display device using such an organic EL device does not require a backlight, which is necessary in liquid crystal displays, it is possible to realize a display device that is thin, light, has high contrast, and has low power consumption. For example, Patent Document 1 describes an example of a display device using an organic EL device.

[0006] In addition, a method using a metal mask is known as a method for forming organic EL elements separately, but there are challenges regarding aperture ratio, precision, and the large area of ​​the substrate. Patent Document 2 describes a method for forming organic EL elements separately using photolithography without using a metal mask. Prior art literature

[0007] Japanese Patent Publication No. JP 2002-324673, International Publication No. WO2023 / 285907 The problem to be solved

[0008] One embodiment of the present invention has as its objective to provide a display device that facilitates high-resolution and a method for manufacturing the same. One embodiment of the present invention has as its objective to provide a display device having both high display quality and high resolution. One embodiment of the present invention has as its objective to provide a display device with high contrast. One embodiment of the present invention has as its objective to provide a display device with high reliability.

[0009] One embodiment of the present invention has as its objective to provide a display device having a novel configuration or a method for manufacturing a display device. One embodiment of the present invention has as its objective to provide a method for manufacturing the above-described display device with a high yield. One embodiment of the present invention has as its objective to at least alleviate at least one of the problems of the prior art. means of solving the problem

[0010] One embodiment of the present invention is a display device comprising a pixel electrode, an EL layer, an upper electrode, a first insulating layer, a barrier, a color filter, and a transistor. The transistor is located below the pixel electrode and is connected to the pixel electrode. The first insulating layer has an end above the pixel electrode. The barrier is located above the first insulating layer. The EL layer comprises a luminescent compound and is in contact with the upper surface of the pixel electrode and the upper surface of the first insulating layer. The upper electrode covers the upper surface and end of the EL layer and is in contact with the upper surface of the first insulating layer and the side of the barrier. The color filter is located above the upper electrode and the barrier, and its end overlaps with the barrier. The barrier has an inverse taper shape when viewed in cross-section and is conductive. Additionally, there is a gap between the end of the first insulating layer and the barrier.

[0011] Also, another embodiment of the present invention is a display device comprising a first pixel electrode, a second pixel electrode, a first EL layer, a second EL layer, a first upper electrode, a second upper electrode, a first insulating layer, a partition, a first color filter, a second color filter, and a transistor. The transistor is located below the first pixel electrode and is connected to the first pixel electrode. The first insulating layer has ends above the first pixel electrode and above the second pixel electrode. The partition is located above the first insulating layer. The first EL layer comprises a first luminescent compound and is in contact with the upper surface of the first pixel electrode and the upper surface of the first insulating layer. The second EL layer comprises a second luminescent compound and is in contact with the upper surface of the second pixel electrode and the upper surface of the first insulating layer. The first upper electrode covers the upper surface and ends of the first EL layer and is in contact with the upper surface of the first insulating layer and a portion of the side of the partition. The second upper electrode covers the upper surface and end of the second EL layer and contacts the upper surface of the first insulating layer and another part of the side of the partition wall. The first color filter is located above the first upper electrode and the partition wall, and its end overlaps with the partition wall. The second color filter is located above the second upper electrode and the partition wall, and its end overlaps with the partition wall. The partition wall has an inverse taper shape when viewed in cross-section and is conductive. Additionally, there is a gap between the end of the first insulating layer above the first pixel electrode and the partition wall.

[0012] In addition, it is desirable that the EL layer above has the function of emitting white light. At this time, it is more desirable that the color filter includes a metal, pigment, or dye.

[0013] In addition, it is desirable for the EL layer described above to have the function of emitting blue light or light with a wavelength shorter than blue. In this case, it is more desirable to include a wavelength conversion layer instead of a color filter. The wavelength conversion layer includes quantum dots or fluorescent materials.

[0014] In addition, in any of the above forms, it is preferable that the angle formed between the contact surface with the first insulating layer of the bulkhead and the side surface is 95° or more and 150° or less.

[0015] In addition, in any of the above forms, it is preferable that the partition contains indium.

[0016] In addition, in any of the above forms, it is preferable that the transistor includes a metal oxide in the semiconductor layer where the channel is formed. Effects of the invention

[0017] According to one embodiment of the present invention, a display device that facilitates high-resolution and a method for manufacturing the same can be provided. Alternatively, a display device having both high display quality and high resolution can be provided. Alternatively, a display device with high contrast can be provided. Alternatively, a display device with high reliability can be provided.

[0018] In addition, according to one embodiment of the present invention, a display device having a novel configuration or a method for manufacturing a display device may be provided. Alternatively, a method for manufacturing the above-described display device with a high yield may be provided. According to one embodiment of the present invention, at least one of the problems of the prior art may be alleviated.

[0019] Furthermore, the description of these effects does not interfere with the existence of other effects. Also, one embodiment of the present invention does not necessarily have to possess all of these effects. Additionally, other effects may be derived from the description in the specification, drawings, claims, etc. Brief explanation of the drawing

[0020] Figures 1 (A) and (B) show examples of the configuration of a display device. Figures 2 (A) and (B) show examples of the configuration of a display device. Figures 3 (A) to (C) show examples of configurations of a display device. Figures 4 (A) to (F) are drawings illustrating examples of methods for manufacturing a display device. Figures 5 (A) to (C) are drawings illustrating examples of methods for manufacturing a display device. Figures 6 (A) and (B) are drawings illustrating examples of methods for manufacturing a display device. Figures 7 (A) to (E) are drawings illustrating examples of methods for manufacturing a display device. Figures 8 (A) and (B) show examples of configurations for a manufacturing device for a display device. Figure 9 shows an example of the configuration of a display device. Figure 10 shows an example of the configuration of a display device. Figures 11 (A) and (B) show examples of the configuration of a display device. Figures 12 (A) and (B) show examples of the configuration of a display device. Figure 13 shows an example of the configuration of a display device. Figure 14 shows an example of the configuration of a display device. Figure 15 shows an example of the configuration of a display device. Figures 16 (A) to (F) show examples of configurations of a light-emitting device. Figures 17 (A) to (C) show examples of configurations of a light-emitting device. Figures 18 (A) to (D) show examples of configurations of electronic devices. Figures 19 (A) to (F) show examples of configurations of electronic devices. Figures (A) to (G) of FIG. 20 show examples of configurations of electronic devices. Figures 21 (A) and (B) show examples of configurations of electronic devices. Figure 21 (C) is a diagram showing the state of using electronic devices. Specific details for implementing the invention

[0021] Embodiments are described below with reference to the drawings. However, it is readily understood by those skilled in the art that embodiments can be implemented in many different forms, and that their forms and details can be varied without departing from the intent and scope thereof. Accordingly, the present invention is not to be interpreted as being limited to the description of the embodiments below.

[0022] Furthermore, in the configuration of the invention described below, the same reference numerals are commonly used across different drawings for identical parts or parts having the same function, and redundant descriptions thereof are omitted. Additionally, when referring to parts having the same function, the hatch pattern is identical, and in some cases, no specific reference numeral is assigned.

[0023] Additionally, in each drawing described in this specification, the size, thickness, or area of ​​each component may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0024] In addition, ordinal numbers such as "first," "second," etc. in this specification are attached to avoid confusion of components and are not numerically limited.

[0025] Furthermore, in this specification and others, "substantially matching upper surface shapes" refers to a situation where at least a portion of the contours overlaps between stacked layers. For example, this category includes cases where the upper and lower layers are processed using the same mask pattern or partially the same mask pattern. However, strictly speaking, there are cases where the contours do not overlap and the upper layer is located inside the lower layer or the upper layer is located outside the lower layer; in such cases, it is also referred to as "substantially matching upper surface shapes."

[0026] Furthermore, in this specification and others, the upper surface shape of a component refers to the shape of the outline of said component when viewed from a planar view. Additionally, "when viewed from a planar view" means viewing the component in the normal direction to the surface to be formed of said component or the surface of a support (e.g., a substrate) on which said component is formed.

[0027] Furthermore, expressions indicating direction such as "up" and "down" below shall, in principle, be used in accordance with the direction of the drawings. However, for purposes such as facilitating explanation, there are cases where the direction implied by "up" or "down" in the specification does not correspond to the drawings. For example, when explaining the stacking order (or formation order) of a laminate, etc., even if the surface on which the laminate is provided (surface to be formed, support surface, bonding surface, flat surface, etc.) is located above the laminate in the drawings, the surface to be formed side may be described as "down" and the laminate side as "up," etc.

[0028] Additionally, the terms "film" and "layer" may be interchangeable in this specification and others. For example, the term "insulating layer" may be interchangeable with the term "insulating film."

[0029] In addition, the term EL layer in this specification refers to a layer (also called a light-emitting layer) or a laminate including a light-emitting layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting material.

[0030] In addition, in the present specification and the like, a display panel substrate equipped with a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package), or an IC mounted on the substrate using a COG (Chip On Glass) method, may be referred to as a display panel module, a display module, or simply a display panel, etc.

[0031] (Embodiment 1)

[0032] In this embodiment, an example of the configuration of a display device of one form of the present invention and an example of a method for manufacturing the same will be described.

[0033] One embodiment of the present invention is a display device comprising a light-emitting element (also called a light-emitting device). The display device comprises a light-emitting element having a white light-emitting color (also called a white light-emitting element) and a color filter (also called a coloring layer). Each light-emitting element comprises a pair of electrodes and an EL layer between them. Preferably, the light-emitting element is an organic EL element (organic electroluminescent element). For example, a full-color display device can be realized by including three types of pixels, each comprising a color filter that transmits red (R), green (G), or blue (B) light.

[0034] In addition, in addition to the combination of a white light-emitting element and a color filter, a combination of a blue light-emitting element and a wavelength conversion layer may also be used. For example, quantum dots or fluorescent materials may be used for the wavelength conversion layer. For example, the wavelength conversion layer can convert blue light into light with a longer wavelength (green light, red light, etc.). Therefore, a full-color display device can be realized by including a blue light-emitting element, a wavelength conversion layer that converts blue light into red light, and a wavelength conversion layer that converts blue light into green light. Specifically, a full-color display device can be realized by adopting a configuration in which, for example, a blue light-emitting element is used to emit blue light, a blue light-emitting element is combined with a wavelength conversion layer that converts blue light into red light to emit red light, and a blue light-emitting element is combined with a wavelength conversion layer that converts blue light into green light to emit green light.

[0035] A light-emitting element may have a configuration including an EL layer between a pair of electrodes. Here, one of the pair of electrodes is a pixel electrode capable of individually supplying potential. In addition, the other of the pair of electrodes is a common electrode to which a common potential is supplied among multiple light-emitting elements. By controlling the potential of the pixel electrode by a circuit composed of a transistor or the like, the luminous brightness of the light-emitting elements can be individually controlled, thereby enabling the display of an image.

[0036] In a display device using a single type of light-emitting element and a color filter, there is an advantage in that the materials constituting each light-emitting element can be common. For example, only the pixel electrodes can be formed separately, while the EL layer and common electrodes can be formed as a single continuous layer between all light-emitting elements without being formed separately. This allows for a reduction in manufacturing costs compared to cases where the EL layer and the like are formed separately. Furthermore, since there is no need to form the EL layer separately using a metal mask or the like, a display device with very high precision can be realized.

[0037] On the other hand, when the EL layer is shared, leakage current may flow between adjacent light-emitting elements through the highly conductive film constituting the EL layer, resulting in unintended light emission. This leads to a decrease in contrast, which not only degrades display quality but also increases power consumption. Therefore, although high resolution is possible because a metal mask is unnecessary, it is necessary to increase the distance between adjacent light-emitting elements to suppress leakage current to a low level. For this reason, there are limitations to high resolution and aperture ratio improvement in configurations where the EL layer is shared.

[0038] In one embodiment of the present invention, fine patterning of the EL layer is performed without using a shadow mask such as a metal mask. By doing so, the EL layer can be processed into an island shape for each light-emitting element, thereby substantially preventing leakage current between light-emitting elements. Therefore, it is possible to realize a display device with high precision and a high aperture ratio, which has been difficult to achieve until now. In addition, since no leakage current occurs, it is possible to realize a display device that is very clear, has high contrast, and has high display quality.

[0039] In one embodiment of the present invention, a barrier is provided to physically separate an EL layer between two adjacent light-emitting elements (a first light-emitting element and a second light-emitting element). The barrier is a conductive structure having an inverse taper shape. The barrier may also be described as having a shape in which the upper portion protrudes horizontally more than the lower portion. The barrier is formed to be positioned between two adjacent pixel electrodes. Additionally, the barrier is provided to surround a single pixel electrode. When the EL layers of the first light-emitting element and the second light-emitting element are formed, separation occurs due to the barrier.

[0040] In addition, in this specification, the term "disconnection" refers to a phenomenon in which a layer, film, electrode, etc. is divided due to the shape of the surface to be formed (e.g., a step difference).

[0041] Next, the upper electrode is formed by covering the EL layer and the barrier. At this time, the upper electrode is formed using a film formation method that has higher step coverage than the EL layer. As a result, a portion of the upper electrode covers the edge of the EL layer and can come into contact with a portion of the barrier. Subsequently, a protective layer covering the upper electrode and the barrier is formed. It is preferable to form the protective layer using the Atomic Layer Deposition (ALD) method, which has very high step coverage. This allows for obtaining a film that serves as a good protective layer with few defects such as pinholes.

[0042] By using this method, the EL layer can be processed without using a metal mask, so a display device with very high precision and a high aperture ratio can be manufactured.

[0043] The spacing of the island-shaped EL layer is difficult to make less than 10 μm using a formation method, for example, that uses a metal mask, but using the above method, it can be narrowed to 3 μm or less, 2 μm or less, or 1 μm or less. For example, by using an LSI exposure device, the spacing can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, and further to 50 nm or less. By doing so, the area of ​​the non-emissive region that may exist between two light-emitting elements can be significantly reduced, and the aperture ratio can be made close to 100%. For example, the aperture ratio can be 50% or more, 60% or more, 70% or more, 80% or more, and further to 90% or more, and it is also possible to realize an aperture ratio of less than 100%.

[0044] In addition, the size of the EL layer itself can be made much smaller compared to the case where a metal mask is used. Furthermore, for example, when a metal mask is used to form the EL layer in sections, thickness variations occur between the center and the edges of the island-shaped EL layer, so the effective area that can be used as a light-emitting region relative to the total area of ​​the EL layer becomes smaller. On the other hand, in the above manufacturing method, since the island-shaped EL layer is formed by using a partition wall for separation, the thickness can be made uniform, so that even if the size of the EL layer is fine, the practically entire area can be used as a light-emitting region. Therefore, using the above manufacturing method, both high precision and a high aperture ratio can be realized.

[0045] As described above, by using the above manufacturing method, it is possible to realize a display device that integrates fine light-emitting elements. Therefore, since there is no need to artificially increase the resolution using a special pixel arrangement method such as the Pentile method, it is possible to realize a display device that includes three colors of light-emitting elements in a single pixel and has a resolution of 500 ppi or more, 1000 ppi or more, 2000 ppi or more, 3000 ppi or more, 5000 ppi or more, and furthermore, 8000 ppi or more.

[0046] More specific examples will be explained below with reference to the drawings.

[0047] [Composition Example]

[0048] Figure 1 (A) is a schematic top view of a display device (100). The display device (100) includes a plurality of pixels representing red (110R), pixels representing green (110G), and pixels representing blue (110B), respectively. Each pixel includes a light-emitting element and a color filter. Also, in Figure 1 (A), the X and Y directions that are orthogonal to each other are indicated by arrows.

[0049] Pixels (110R), pixels (110G), and pixels (110B) are each arranged in a matrix. Figure 1 (A) shows a so-called stripe array in which light-emitting elements of the same color are arranged in the Y direction. Furthermore, the method of arranging pixels is not limited to this; arrangement methods such as S-stripe array, delta array, and zigzag array may be used, and a pentile array may also be used. Figure 1 (B) shows an example of using an S-stripe array.

[0050] It is preferable to use an EL element, such as an OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode), as the light-emitting element placed in the pixel (110R), pixel (110G), and pixel (110B). Examples of light-emitting materials included in the EL element include a material that emits fluorescence (fluorescent material), a material that emits phosphorescence (phosphorescent material), and a material that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material). As light-emitting materials included in the EL element, not only organic compounds but also inorganic compounds (quantum dot materials, etc.) can be used.

[0051] In addition, when describing matters common to components distinguished by the alphabet or number attached to the symbol in this embodiment (pixel electrode (111R), pixel electrode (111G), etc.), there are cases where the symbol (pixel electrode (111), etc.) is used to describe them without separate explanation, by omitting the alphabet or number.

[0052] Additionally, a partition (120) is provided between each pixel. The partition (120) has a grid-like upper surface shape. It can also be said that the light-emitting element included in the pixel is provided in an area surrounded by the partition (120).

[0053] As shown in (A) of FIG. 1, a gap is provided between the partition (120) and each pixel when viewed from a planar perspective. FIG. 1 (A) shows the gap in the X direction (Sx) and the gap in the Y direction (Sy) between the light-emitting element included in the pixel and the partition (120).

[0054] Figure 2 (A) is a schematic cross-sectional view of a display device (100) along the cutting line AB in Figure 1 (A). The display device (100) includes a plurality of transistors (150), pixels (110R), pixels (110G), and pixels (110B). Each pixel includes a light-emitting element (110) and one of a color filter (161R), a color filter (161G), and a color filter (161B).

[0055] A transistor (150) is provided on a substrate (101). The transistor (150) comprises a semiconductor layer (151) in which a channel is formed, an insulating layer (152) functioning as a gate insulating layer, a conductive layer (153) functioning as a gate electrode, and a pair of conductive layers (154) in contact with the semiconductor layer (151) and functioning as a source electrode and a drain electrode. The conductive layer (154) contacts the semiconductor layer (151) at an opening provided in the insulating layer (131) covering the semiconductor layer (151), the insulating layer (152), and the conductive layer (153).

[0056] It is preferable to use a metal oxide (also called an oxide semiconductor) that exhibits semiconductor properties in the semiconductor layer (151). As an oxide semiconductor, an oxide semiconductor represented by indium oxide or In-Ga-Zn oxide (IGZO) may be used. Alternatively, the semiconductor layer of the transistor may include silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0057] In addition to these, metal oxides that can be used in the semiconductor layer (151) may include tin oxide, zinc oxide, indium tin oxide, indium titanium oxide, indium gallium oxide, indium tungsten oxide, indium zinc oxide, indium gallium aluminum oxide, indium gallium tin oxide, gallium zinc oxide, aluminum zinc oxide, indium aluminum zinc oxide, indium tin zinc oxide, indium titanium zinc oxide, indium gallium zinc oxide, indium gallium tin zinc oxide, indium gallium aluminum zinc oxide, etc. Alternatively, indium tin oxide, gallium tin oxide, aluminum tin oxide, etc. containing silicon may be used.

[0058] In addition, as an example of a transistor (150), a so-called top-gate type transistor is presented here in which the gate electrode is located above the semiconductor layer, but it is not limited thereto. For example, a bottom-gate type transistor in which the gate electrode is located below the semiconductor layer may also be used.

[0059] An insulating layer (132) is provided by covering the conductive layer (154) and the insulating layer (131), and a light-emitting element (110) is provided on the insulating layer (132).

[0060] The light-emitting element (110) included in the pixel (110R) includes an EL layer (112) between the pixel electrode (111R) and the upper electrode (113). Likewise, the light-emitting element (110) included in the pixel (110G) includes an EL layer (112) between the pixel electrode (111G) and the upper electrode (113). The light-emitting element (110) included in the pixel (110B) includes an EL layer (112) between the pixel electrode (111B) and the upper electrode (113).

[0061] Each pixel electrode (111) is provided on an insulating layer (132). In FIG. 2 (A), a conductive layer (155) is provided on the insulating layer (131), and a conductive layer (156) is provided in an opening of the insulating layer (132) that overlaps with the conductive layer (155). The pixel electrode (111) is connected to the conductive layer (154) through the conductive layer (156) and the conductive layer (155). Accordingly, each pixel electrode (111) is connected to one of the source electrode and drain electrode of the transistor (150).

[0062] The EL layer (112) included in each light-emitting element (110) includes two or more light-emitting organic compounds that emit light of different colors. For example, it may include a plurality of light-emitting layers each containing a different light-emitting organic compound. For example, the combination of light-emitting layers included in the EL layer (112) may be a combination in which white light is obtained by light emission from each light-emitting layer. For example, a configuration including three types of light-emitting layers of red (R), green (G), and blue (B), or a configuration including two types of light-emitting layers of blue and yellow (Y) may be used. Furthermore, it is not limited thereto, and for example, in the case of two colors, a configuration in which the light-emitting element as a whole emits white light can be obtained by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary colors. In addition, when white light emission is obtained using three or more light-emitting layers, it is preferable to enable the light-emitting element as a whole to emit white light by mixing the light-emitting colors of each of the three or more light-emitting layers.

[0063] The EL layer (112) may include one or more of an electron injection layer, an electron transport layer, an electron blocking layer, a hole injection layer, a hole transport layer, and a hole blocking layer in addition to a layer (emissive layer) containing a luminescent organic compound.

[0064] A conductive film having visible light transmittance is used on one of each pixel electrode (111) and the upper electrode (113), and a conductive film having reflectivity is used on the other. By using a conductive film having light transmittance on each pixel electrode (111) and a conductive film having reflectivity on the upper electrode (113), a bottom-emission type light-emitting device can be obtained, and conversely, by using a conductive film having reflectivity on each pixel electrode (111) and a conductive film having light transmittance on the upper electrode (113), a top-emission type light-emitting device can be obtained. Additionally, by using a conductive film having light transmittance on both sides of each pixel electrode (111) and the upper electrode (113), a dual-emission type display device can be obtained.

[0065] In addition, a protective layer (135) is provided to cover the upper electrode (113).

[0066] The protective layer (135) may have a single-layer structure or a multilayer structure including, for example, at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide, silicon nitride, silicon nitride, silicon nitride, aluminum oxide, aluminum nitride, and hafnium oxide. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used for the protective layer (135). In particular, aluminum oxide and silicon nitride are preferred because they have high barrier properties against water.

[0067] In addition, in this specification and others, the term "nitride oxide" refers to a material having a higher oxygen content than nitrogen in its composition, and the term "nitride oxide" refers to a material having a higher nitrogen content than oxygen in its composition.

[0068] In addition, a laminate of an inorganic insulating film and an organic insulating film may be used as the protective layer (135). For example, a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferred.

[0069] An insulating layer (133) is provided to cover the end of each pixel electrode (111). The portion of the pixel electrode (111) where the insulating layer (133) is not provided functions as a light-emitting region of the light-emitting element (110). It is preferable that the end of the insulating layer (133) has a tapered shape. Additionally, the insulating layer (133) does not necessarily have to be provided.

[0070] In addition, in the present specification, etc., the term "the object has a tapered shape" means that the angle formed between the side of the object and the contact surface with the surface to be formed of the object (also called the taper angle) is greater than 0° and less than 90°, and the object has a cross-sectional shape in which the thickness increases continuously from the end. On the other hand, the term "the object has an inverse tapered shape" means that the angle formed between the side of the object and the contact surface with the surface to be formed of the object is greater than 90° and less than 180°.

[0071] It is preferable that the insulating layer (133) includes an organic resin. By using an organic resin in the insulating layer (133), adhesion to the EL layer (112) can be increased, thereby improving the manufacturing yield. In particular, when each EL layer is processed by etching, it is preferable to use an insulating layer (133) with high adhesion to each EL layer so that the problem of each EL layer peeling off after etching can be reduced.

[0072] In addition, by using an organic resin in the insulating layer (133), its surface can be made flat and gently curved. Therefore, the coverage of the film formed on the insulating layer (133) can be improved.

[0073] Materials that can be used for the insulating layer (133) include, for example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of these resins.

[0074] Each EL layer (112) includes an area in contact with the upper surface of each pixel electrode (111) and an area in contact with the surface of the insulating layer (133). Additionally, the end of each EL layer (112) is located on the insulating layer (133).

[0075] A partition (120) is provided on the insulating layer (133). The partition (120) is conductive and has an inverse tapered shape.

[0076] Additionally, an insulating layer (134) is provided on the protective layer (135), and a color filter (161R), a color filter (161G), and a color filter (161B) are provided on the insulating layer (134).

[0077] It is preferable that the insulating layer (134) functions as a flattening film. If the upper surface of the insulating layer (134) is flat, it becomes difficult for thickness variations to occur in each color filter (161), thereby suppressing color variations. In addition, it is preferable that the insulating layer (134) has visible light transmittance. The higher the transparency of the insulating layer (134), the more efficiently light can be transmitted from the light-emitting element (110) to the colored layer, thereby improving light extraction efficiency. Examples of resin materials that can be used for the insulating layer (134) include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins.

[0078] A color filter (161R) is provided to overlap at least with a pixel electrode (111R) and has the function of transmitting red light and shielding (absorbing or reflecting) other colors of light. A color filter (161G) is provided to overlap at least with a pixel electrode (111G) and has the function of transmitting green light and shielding other colors of light. A color filter (161B) is provided to overlap at least with a pixel electrode (111B) and has the function of transmitting blue light and shielding other colors of light. It is preferable that each color filter (161) be provided such that its end overlaps with a partition (120). Additionally, by providing two adjacent color filters (161) so that a portion of them overlap, it is possible to prevent white light from leaking through the gaps of the color filters (161), thereby obtaining a display device with high contrast.

[0079] Each color filter (161) may use a resin material in which one or more of a metal, an alloy, a pigment, and a dye are dispersed. The color filters (161) can be formed at desired locations using photolithography or inkjet methods, etc.

[0080] Here, a light-emitting element (110) that emits blue light or light with a shorter wavelength may be used as the light-emitting element, and a configuration including a wavelength conversion layer may be used instead of a color filter (161). In this case, the wavelength conversion layer provided to each of the green pixel (110G), red pixel (110R), and blue pixel (110B) may use a resin or the like containing a wavelength conversion material that converts the light emitted from the light-emitting element (110) into green, red, or blue light. Also, if a light-emitting element that emits blue light is used as the light-emitting element (110), a wavelength conversion layer does not need to be provided to the blue pixel (110B). Fluorescent materials or quantum dots may be used as the wavelength conversion material.

[0081] Figure 2 (B) is an enlarged view of a pixel (110R), a pixel (110G), a partition (120) located between them, and the vicinity thereof.

[0082] Each EL layer (112) has its respective end positioned on the insulating layer (133). Each upper electrode (113) covers the end of the EL layer (112) and contacts the upper surface of the insulating layer (133) and part of the side of the partition (120).

[0083] The upper electrode (113) covers the end of the EL layer (112), and there may be a portion that contacts the partition wall (120) and a portion that is located on the partition wall (120). Additionally, an EL layer (112a) is provided on the partition wall (120) between the partition wall (120) and the upper electrode (113).

[0084] The upper electrodes (113) of two pixels provided with the partition (120) in between each come into contact with the conductive partition (120), so they can be said to be connected through the partition (120). Therefore, even if the upper electrodes (113) are separated near the side of the partition (120), a common potential is supplied to them through the partition (120). Also, as shown in (A) of FIG. 1, the partition (120) is provided in a grid shape to pass between the light-emitting elements (110), so the upper electrodes (113) of all light-emitting elements (110) are connected through the partition (120). In addition, the partition (120) also functions as wiring to supply potential to the upper electrodes (113) of each light-emitting element (110).

[0085] As shown in FIG. 2 (B), the insulating layer (133) has its end positioned over the pixel electrode (111R) and the pixel electrode (111G), respectively. The gap (Sx) corresponds to the distance between the end of the insulating layer (133) and the end of the most protruding part of the partition (120). The gap (Sx) may also be described as the area between the end of the light-emitting region of the light-emitting element (110) and the end of the most protruding part of the partition (120). Additionally, as shown in FIG. 1 (A) and FIG. 2 (B), when viewed in a plane, the width of the gap (Sx) is, for example, the distance between the end of the light-emitting region of the light-emitting element (110) and the end of the partition (120). If there is a gap (Sx), the end of the EL layer (112) separated by the partition wall (120) during the formation of the EL layer (112) can be positioned on the insulating layer (133) rather than on the pixel electrode (111). For example, if the end of the EL layer (112) is positioned on the pixel electrode (111), there is a risk that the upper electrode (113) covering the EL layer (112) will come into contact with the pixel electrode (111) and electrically short-circuit them. Therefore, it is important to provide a gap (Sx) between the end of the insulating layer (133) and the partition wall (120) so that the end of the EL layer (112) is securely positioned on the insulating layer (133). The same applies to the gap (Sy).

[0086] It is preferable that the height h of the partition wall (120) be greater than the thickness of the EL layer (112). Additionally, the taper angle θ of the partition wall (120) can be greater than 90° and less than 180°. As the taper angle θ approaches 90°, it becomes easier for the partition wall (120) and the upper electrode (113) to come into contact when the upper electrode (113) is formed, whereas there is a concern that the gap between the end of the EL layer (112) and the partition wall (120) becomes smaller, making it impossible to secure space for the upper electrode (113) and the partition wall (120) to come into contact. Specifically, for example, it is thought that it becomes difficult for the upper electrode (113) to enter between the EL layer (112) and the partition wall (120). In addition, as the taper angle θ approaches 180°, the EL layer (112) becomes more prone to disconnection, while it becomes more difficult to bring the upper electrode (113) and the partition (120) into contact. Therefore, it is preferable to set the taper angle θ to, for example, 95° or more and 150° or less, preferably 100° or more and 135° or less.

[0087] Various conductive materials can be used for the bulkhead (120). For example, metals, alloys, oxide conductive materials, nitride conductive materials, etc. may be used. For example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing said metal materials may be used.

[0088] Additionally, the partition (120) preferably comprises an oxide conductive material containing indium. This is preferable because it can reduce contact resistance with the upper electrode (113). For example, an oxide conductive material represented by indium tin oxide may be used. In addition, indium oxide, indium zinc oxide, indium titanium oxide, indium gallium zinc oxide, indium tin zinc oxide, indium titanium zinc oxide, indium gallium tin zinc oxide, etc. may be used. Alternatively, indium tin oxide containing silicon may be used. Furthermore, an oxide conductive material that does not contain indium, such as zinc oxide, may also be used.

[0089] In this configuration, since the EL layer can be physically separated between adjacent light-emitting elements, the occurrence of leakage current through the EL layer can be substantially eliminated, unlike cases where the EL layers are in contact or shared between light-emitting elements. By doing so, unintended light emission is prevented, thereby enabling the realization of a display device with high contrast and high display quality. Additionally, since the EL layer (112) is covered by the upper electrode (113) and the protective layer (135) within the area enclosed by the partition wall (120), impurities such as moisture are prevented from diffusing into the EL layer (112), thereby enabling the realization of a highly reliable display device. Furthermore, in this configuration, the EL layer (112) can be formed without using a metal mask, and since the layer constituting the light-emitting element and the layer near it can all be processed using photolithography, high precision and high aperture ratio are easier to achieve compared to cases where a metal mask is used.

[0090] In FIG. 2 (A), an example is shown in which a partition (120) is provided on an insulating layer (133), but the insulating layer (133) does not need to be provided. FIG. 3 (A) shows an example in which the insulating layer (133) is not provided. In FIG. 3 (A), the partition (120) is provided in contact with the upper surface of the insulating layer (132), just like the pixel electrode (111). Also, each end of each EL layer (112) is located on the insulating layer (132), and each upper electrode (113) is in contact with the insulating layer (132) and the partition (120).

[0091] Additionally, while FIG. 2 (A) shows an example where each color filter (161) is provided on the insulating layer (134), as shown in FIG. 3 (B), the color filter (161) may be provided directly on the protective layer (135). In this case, it is preferable that each color filter (161) be provided to fill the concave portion of the upper surface of the protective layer (135) in the area enclosed by the partition wall (120). Also, in this case, it is preferable to process the end of the color filter (161) so that it is positioned on the partition wall (120). This prevents the white light emitted from the light-emitting element (110) from leaking to the outside.

[0092] In addition, in the above Fig. 2 (A), the bulkhead (120) is shown with a height greater than its width, but in reality, there are cases where the cross-sectional width is formed larger than the height. Fig. 3 (C) shows an example where the cross-sectional width of the bulkhead (120) is greater than its height.

[0093] Up to this point, the compositional examples have been explained.

[0094] [Example of production method]

[0095] Hereinafter, an example of a method for manufacturing a display device of one form of the present invention will be described with reference to the drawings. Here, the display device (100) presented in the previous configuration example will be used as an example. Figures 4 (A) to 5 (B) are schematic cross-sectional views of each process of the method for manufacturing a display device exemplified below.

[0096] In addition, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), atomic layer deposition (ALD), etc.

[0097] In addition, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, knife coating, etc.

[0098] Sputtering methods include RF sputtering, which uses a high-frequency power source for sputtering; DC sputtering, which uses a direct current power source; and pulsed DC sputtering, which changes the voltage applied to the electrodes in pulses. It is preferable to use RF sputtering for film deposition using insulating targets. DC sputtering is mainly used when film deposition is performed using conductive targets. In addition, DC sputtering allows for the formation of insulating films not only through the formation of conductive films but also through reactive sputtering using pulsed DC sputtering. Specifically, pulsed DC sputtering can be used when depositing compounds such as oxides, nitrides, and carbides using reactive sputtering.

[0099] CVD methods can be classified into Plasma Enhanced CVD (PECVD), which utilizes plasma; Thermal CVD (TCVD), which utilizes heat; and Photo CVD, which utilizes light. Additionally, depending on the source gas used, they can be classified into Metal CVD (MCVD) and Metal Organic CVD (MOCVD).

[0100] High-quality films can be obtained at relatively low temperatures using the plasma CVD method. Furthermore, since the thermal CVD method does not use plasma, plasma damage to the workpiece can be minimized. Additionally, because plasma damage does not occur during film formation in the thermal CVD method, films with fewer defects can be obtained.

[0101] As for the ALD method, thermal ALD, which carries out the reaction between the precursor and the reactant using only thermal energy, and PEALD, which uses a plasma-excited reactant, can be used.

[0102] Unlike sputtering, CVD and ALD methods are film deposition methods with good step coverage because they are less affected by the shape of the workpiece. In particular, ALD is suitable for coating surfaces of high aspect ratio openings due to its excellent step coverage and thickness uniformity. However, since the deposition speed of ALD is relatively slow, it is sometimes advisable to use it in combination with other methods, such as CVD, which has a faster deposition speed.

[0103] The CVD method allows for the deposition of films with arbitrary compositions by varying the flow rate ratio of the source gas. For example, the CVD method can deposit films with continuously changing compositions by varying the flow rate ratio of the source gas during deposition. Since the time required for transport or pressure adjustment is eliminated when deposition is performed while varying the flow rate ratio of the source gas, the deposition time can be shortened compared to using multiple deposition chambers. Consequently, it is possible to increase the productivity of display devices.

[0104] In the ALD method, films of any composition can be deposited by using multiple types of different precursors. Alternatively, when multiple types of different precursors are introduced, films of any composition can be deposited by controlling the number of cycles for each precursor. Furthermore, similar to the CVD method, films with continuously changing compositions can be deposited.

[0105] In addition, the thin film constituting the display device can be processed using methods such as photolithography. Alternatively, the thin film may be processed using methods such as nanoimprinting, sandblasting, or lift-off. Furthermore, island-shaped thin films may be directly formed using deposition methods that utilize shielding masks, such as metal masks. Directed Self Assembly (DSA) may also be used.

[0106] There are two representative methods of photolithography. One is a method in which a resist mask is formed on a thin film to be processed, the thin film is processed by etching or the like, and the resist mask is removed. The other is a method in which a photosensitive thin film is deposited, and then exposure and development are performed to process the thin film into a desired shape.

[0107] For photolithography, light used for exposure may include, for example, i-lines (wavelength 365 nm), g-lines (wavelength 436 nm), h-lines (wavelength 405 nm), or a mixture thereof. In addition to these, ultraviolet light, KrF laser light, or ArF laser light may also be used. Furthermore, exposure may be performed using immersion exposure technology. Additionally, extreme ultraviolet (EUV) light or X-rays may be used as light for exposure. Furthermore, an electron beam may be used instead of light for exposure. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for very fine processing. Moreover, when exposure is performed by scanning with the above light or electron beam, a photomask is unnecessary.

[0108] Dry etching, wet etching, sandblasting, etc., can be used for etching thin films. When using dry etching, isotropic etching or anisotropic etching can be performed by controlling the conditions. When using wet etching, isotropic etching can be performed.

[0109] First, a substrate (101) is prepared, and a transistor (150), an insulating layer (131), an insulating layer (132), etc. are formed. Then, a conductive film is formed on the insulating layer (132), and unnecessary parts are removed by etching to form a pixel electrode (111R), a pixel electrode (111G), and a pixel electrode (111B).

[0110] When using a conductive film that is reflective to visible light as each pixel electrode (111), it is preferable to use a material (e.g., silver or aluminum) with a reflectivity as high as possible across the entire wavelength range of visible light. This allows not only to increase the light extraction efficiency of the light-emitting element but also to increase color reproduction.

[0111] Next, an insulating layer (133) is formed by covering the ends of each pixel electrode (111) (see (A) in FIG. 4). An organic insulating film or an inorganic insulating film may be used as the insulating layer (133). It is preferable that the ends of the insulating layer (133) have a tapered shape to improve the step coverage of the EL film to be formed later. In particular, when using an organic insulating film, it is preferable because the end shape can be easily controlled according to the exposure and development conditions when using a photosensitive material.

[0112] Next, a conductive film (120f) that later becomes a partition (120) is formed. It is preferable to use a material for the conductive film (120f) that can have a high selectivity of etching rate for each pixel electrode (111). It is preferable to use a different conductive material for the layer located on the top of the conductive film (120f) and the pixel electrode (111). Alternatively, a film functioning as an etching stopper may be formed before forming the conductive film (120f), and the film located on the pixel electrode (111) may be removed after etching the conductive film (120f). In this case, the same conductive material may be used for the pixel electrode (111) and the conductive film (120f).

[0113] Next, a resist mask (141) is formed on the conductive film (120f) (see (B) in FIG. 4). Then, the portion of the conductive film (120f) that is not covered by the resist mask (141) is removed by etching to form a barrier (120), and then the resist mask (141) is removed (see (C) in FIG. 4).

[0114] An isotropic etching method may be used for etching the conductive film (120f). For example, a wet etching method or an isotropic dry etching method may be used. The conductive film (120f) may be processed so that etching proceeds faster at the bottom than at the top, thereby forming a partition (120) having an inverse taper shape.

[0115] For example, by selecting a material such that the adhesion between the conductive film (120f) and the insulating layer (133) is lower than the adhesion between the conductive film (120f) and the resist mask (141), etching proceeds faster at the bottom than at the top, and a partition (120) having an inverse taper shape can be formed. For example, if a conductive oxide such as indium tin oxide is used for the conductive film (120f), an organic material (e.g., acrylic resin) with low adhesion to indium tin oxide can be used for the insulating layer (133).

[0116] Next, an EL layer (112) is formed on each pixel electrode (111) and partition (120) (see (D) in FIG. 4). At this time, the EL layer (112) is separated by the partition (120) and is formed in the area between the two partitions (120) and on the partition (120), respectively. The EL layer (112) can be formed using, for example, vacuum deposition, sputtering, or both.

[0117] The method of forming the EL layer (112) is described using FIGS. 6 (A) and (B). It is preferable that the EL layer (112) be formed using a highly anisotropic forming method. That is, as shown in FIGS. 6 (A), the forming is performed such that the direction of the forming material (121) is substantially perpendicular to the upper surface of the substrate (101). By doing so, a separation can be created by the partition wall (120) as shown in FIGS. 6 (B). In addition, it is preferable that sufficient space be secured between the EL layer (112) and the partition wall (120) for the upper electrode (113) to enter.

[0118] Next, the upper electrode (113) is formed by covering the EL layer (112), etc. (see (E) in FIG. 4). At this time, the upper electrode (113) is formed to cover the end of the EL layer (112) and to be in contact with at least a part of the side of the partition wall (120). The upper electrode (113) can be formed using one or more of vacuum deposition, sputtering, and CVD methods.

[0119] A method for forming a film of the upper electrode (113) is described using (A) to (E) of FIG. 7. It is preferable that the upper electrode (113) be formed using a film formation method that has lower anisotropy than the EL layer (112). That is, it is preferable to use a film formation method in which the film formation material of the upper electrode (113) has a component in a direction perpendicular to the upper surface of the substrate as well as a component in an oblique direction. For example, a film formation method with lower anisotropy can be achieved by making the distance between the deposition source (or sputtering target) and the substrate close, using multiple deposition sources (or sputtering targets), or increasing the area of ​​the deposition source (or sputtering target).

[0120] In addition, as shown in FIG. 7 (A), a film-forming device having a mechanism for forming a film material (122) from an oblique direction relative to the upper surface of the substrate (101) and rotating the substrate (101) on a rotation axis (125) perpendicular to the substrate surface can be used. FIG. 7 (A) shows an example where the rotation axis (125) passes through the center of the substrate (101), but it may pass anywhere on the substrate (101), or the rotation axis (125) may be located at a position away from the substrate (101). Also, the rotation axis (125) does not have to be perpendicular to the substrate surface of the substrate (101).

[0121] In addition, as shown in (B) of FIG. 7, a film-forming device having a mechanism in which the substrate (101) rotates (or oscillates) on a rotation axis (125) parallel to the substrate surface may be used. In this case, the direction of flight of the film-forming material (122) may be perpendicular to the rotation axis (125).

[0122] By using a film-forming device having the mechanism shown in (A) and (B) of FIG. 7, during the film-forming process of the upper electrode (113), as shown in (C) of FIG. 7, there can be a period during which the film-forming material (122) is formed from an oblique direction with respect to the substrate surface of the substrate (101), and a period during which the film-forming material (122) is formed from an oblique direction opposite to the above, as shown in (D) of FIG. 7. Therefore, as shown in (E) of FIG. 7, the upper electrode (113) can also be formed on the side of the partition wall (120) having an inverse taper shape.

[0123] In addition, although an example was presented above in which the substrate (101) moves, a configuration in which the deposition source moves may also be used, or a configuration in which both the substrate (101) and the deposition source move may also be used.

[0124] Each light-emitting element (110) can be manufactured as shown in (E) of FIG. 4 through the process described above.

[0125] Next, the upper electrode (113) is covered to form a protective layer (135) (see (F) in FIG. 4). The protective layer (135) is preferably formed by a film deposition method with high step coverage, and is preferably formed by a CVD method or an ALD method. In particular, the ALD method is preferred because the film deposition damage to the layer to be formed is small.

[0126] For example, an aluminum oxide film can be formed as a protective layer (135) by the ALD method. In this case, as a precursor containing aluminum, it is preferable to use trimethylaluminum, triethylaluminum, triisobutylaluminum, dimethylaluminum hydride, tris(dimethylamino)aluminum, tris(diethylamino)aluminum, aluminum trichloride, etc. In addition, as an oxidizing agent functioning as a reactant, for example, ozone (O3), oxygen (O2), water (H2O), nitrogen dioxide (NO2), nitrous oxide (N2O), hydrogen peroxide (H2O2), etc., may be used, and two or more of these may be used.

[0127] Additionally, the protective layer (135) may have a stacked structure of a film formed by the ALD method and a film formed by a film formation method other than the ALD method (e.g., CVD method, sputtering method, etc.). Since the ALD method has very high step coverage but a relatively slower film formation speed compared to other film formation methods, the time required for the film formation process of the protective layer (135) can be shortened by first forming a film with very few defects using the ALD method and then forming a thick insulating film using the CVD method, etc.

[0128] Next, an insulating layer (134) is formed on the protective layer (135). The insulating layer (134) can be formed by forming a layer containing the material of the insulating layer (134) and a solvent using a coating method or the like, and then removing the solvent by heat treatment. Additionally, the insulating layer (134) can be cured by heat treatment.

[0129] Next, a color filter (161R) is formed on the insulating layer (134) (see (A) in FIG. 5). The color filter (161R) can be formed by a method such as photolithography or inkjet. After forming the color filter (161R), heat treatment may be performed to remove solvent, etc., from the color filter.

[0130] After that, color filters (161G) and color filters (161B) are formed on the insulating layer (134) in the same way as the color filter (161R) (see (B) in FIG. 5). Also, the order of formation of each color filter (161) is irrelevant.

[0131] Here, if the insulating layer (134) is not provided as shown in (B) of FIG. 3, it is preferable to form each color filter (161) after forming the protective layer (135) (see (C) of FIG. 5).

[0132] A display device (100) can be manufactured through the process described above.

[0133] [Example of Tabernacle Devices]

[0134] Hereinafter, an example of a film-forming device capable of continuously forming an EL layer, an upper electrode, and a protective layer without exposing them to the atmosphere is described. The film-forming device exemplified below can be used for forming the EL layer (112), the upper electrode (113), and the protective layer (135) in each light-emitting element (110).

[0135] FIG. 8 (A) is a schematic diagram of a film formation device. The film formation device includes an incoming room (LL), an outgoing room (UL), a processing room (HT), film formation rooms (EL1) to (EL8), a film formation room (ALD), and a film formation room (SP) around a return room (TF). The return room (TF) includes a return robot (RBT), and the return robot (RBT) can bring in and take out substrates (101) into each room. A room may also be referred to as a chamber.

[0136] The return chamber (TF) and each room are connected to a vacuum pump to maintain a reduced pressure state. Additionally, a gate valve is provided between the return chamber (TF) and each room, allowing for atmospheric control, such as pressure and temperature, in each room.

[0137] The receiving room (LL) is a room for receiving the substrate (101), and the output room (UL) is a room for outputting the substrate (101). Each of the receiving room (LL) and the output room (UL) is provided with a gate valve connected to the outside.

[0138] A process of heating the substrate (101) can be performed in the processing room (HT). The processing room (HT) includes a baking device. For example, it may be a baking device including a hot plate type baking device, a resistance heater, or an infrared lamp.

[0139] In the film formation chamber (EL1) to film formation chamber (EL8), a film constituting the EL layer (112) can be formed. The film formation chamber (EL1) to film formation chamber (EL8) includes, for example, a vacuum deposition device or a sputtering device.

[0140] For example, the apparatus includes a device that deposits a hole injection layer in the deposition chamber (EL1), a hole transport layer in the deposition chamber (EL2), an electron blocking layer in the deposition chamber (EL3), an emitting layer in the deposition chamber (EL4), a hole blocking layer in the deposition chamber (EL5), an electron transport layer in the deposition chamber (EL6), an electron injection layer in the deposition chamber (EL7), and a charge generation layer in the deposition chamber (EL8).

[0141] In the film formation chamber (SP), the upper electrode (113) can be formed. For example, the film formation chamber (SP) includes a sputtering device.

[0142] In the tabernacle room (ALD), a protective layer (135) can be tabernacled. The tabernacle room (ALD) includes, for example, an ALD device.

[0143] Additionally, while FIG. 8 (A) shows an example including one return room (TF), a configuration in which multiple return rooms (TF) are connected may be adopted. FIG. 8 (B) shows an example in which three return rooms (TF) are connected. One return robot (RBT) is provided in each return room (TF). In the example shown in FIG. 8 (B), each return room (TF) can be connected to four to six rooms, excluding the receiving room (LL) and the receiving room (UL). In FIG. 8 (B), up to three additional rooms can be added depending on the application.

[0144] Next, an example of a film deposition method using a film deposition device is described. First, as shown in (C) of FIG. 4, a substrate (101) formed up to the partition wall (120) is brought into the film deposition device from the receiving chamber (LL), and heat treatment is performed in the processing chamber (HT). Moisture adsorbed on the surface can be removed by the heat treatment. Next, a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer are sequentially deposited in the film deposition chamber (EL1) to the film deposition chamber (EL7). Next, an upper electrode is deposited in the film deposition chamber (SP). Then, after depositing a protective layer (135) in the film deposition chamber (ALD), the substrate (101) is discharged to the outside from the discharge chamber (UL). In this way, the EL layer (112), the upper electrode (113), and the protective layer (135) can be continuously formed without exposing the substrate (101) to the atmosphere.

[0145] In addition, by using the above-mentioned film formation device, a light-emitting device having a so-called tandem structure including a plurality of light-emitting layers with a charge-generating layer interposed therein can be formed.

[0146] First, after performing heat treatment in the processing chamber in the manner described above, the substrate (101) is sequentially introduced into the film deposition chamber (EL1) to the film deposition chamber (EL7), and the film is sequentially deposited from the hole injection layer to the electron injection layer. Next, the charge generation layer is deposited in the film deposition chamber (EL8). After that, the film is sequentially deposited again from the hole injection layer to the electron injection layer in the film deposition chamber (EL1) to the film deposition chamber (EL7). Next, the upper electrode (113) is deposited in the film deposition chamber (SP) and the protective layer (135) is deposited in the film deposition chamber (ALD) in the manner described above, and the substrate (101) is removed from the removal chamber (UL). In this way, a light-emitting device having a two-stage tandem structure in which two light-emitting layers are stacked with a charge generation layer interposed therebetween can be manufactured.

[0147] In addition, at least one of the layers constituting the charge generation layer is deposited in the deposition chamber (EL8). Also, at least one of the electron injection layer and the hole injection layer deposited before and after the deposition process in the deposition chamber (EL8) may serve as a layer constituting the charge generation layer. For example, if the charge generation layer has a stacked structure of an electron injection buffer layer, an electron relay layer, and a P-type layer, the electron injection layer may function as an electron injection buffer layer, and the hole injection layer may function as a P-type layer. In this case, the electron relay layer may also be deposited in the deposition chamber (EL8).

[0148] In addition, when fabricating a light-emitting device having an N-stage (N is a natural number greater than or equal to 2) tandem structure, it is preferable to repeat the film formation in the film formation chamber (EL1) to the film formation chamber (EL8) N-1 times, and then omit the film formation in the film formation chamber (EL8) only for the last Nth film and form the upper electrode (113) and the protective layer (135).

[0149] Up to this point, the tabernacle apparatus and the method of the tabernacle using it have been explained.

[0150] (Embodiment 2)

[0151] In this embodiment, an example of the configuration of a display device of one form of the present invention is described.

[0152] The display device of the present embodiment may be a high-resolution display device or a large display device. Accordingly, the display device of the present embodiment can be used in electronic devices having a relatively large screen, such as, for example, television devices, desktop or laptop personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, smartphones, wristwatch-type terminals, tablet terminals, portable information terminals, and audio playback devices.

[0153] [Display device (400A)]

[0154] FIG. 9 is a perspective view of a display device (400A), and FIG. 10 is a cross-sectional view of a display device (400A).

[0155] The display device (400A) has a configuration in which a substrate (452) and a substrate (451) are joined. In FIG. 9, the substrate (452) is indicated by a dashed line.

[0156] The display device (400A) includes a display section (462), a circuit (464), wiring (465), etc. FIG. 9 shows an example in which an IC (473) and an FPC (472) are mounted on the display device (400A). Therefore, the configuration shown in FIG. 9 can also be described as a display module including a display device (400A), an IC (integrated circuit), and an FPC.

[0157] For example, a scan line driving circuit can be used as the circuit (464).

[0158] The wiring (465) has the function of supplying signals and power to the display unit (462) and the circuit (464). The signals and power are input to the wiring (465) from the outside through the FPC (472) or input to the wiring (465) from the IC (473).

[0159] FIG. 9 illustrates an example in which an IC (473) is provided on a substrate (451) using a COG (Chip On Glass) method or a COF (Chip On Film) method. As for the IC (473), an IC including, for example, a scan line driving circuit or a signal line driving circuit may be used. Additionally, the display device (400A) and the display module do not need to be provided with an IC. Furthermore, the IC may be mounted on an FPC using a COF method or the like.

[0160] FIG. 10 shows an example of a cross-section in which a portion of the area including the FPC (472), a portion of the circuit (464), a portion of the display part (462), and a portion of the area including the end part of the display device (400A) are each cut.

[0161] The display device (400A) shown in FIG. 10 includes a transistor (201), a transistor (205), a plurality of light-emitting elements (430) that emit white light, a red color filter (415R), a green color filter (415G), and a blue color filter (415B), etc., between a substrate (451) and a substrate (452).

[0162] As the light-emitting element (430), the light-emitting element exemplified in Embodiment 1 may be used. Each light-emitting element (430) includes a pixel electrode (411a), a pixel electrode (411b), or a pixel electrode (411c), an island-shaped EL layer, and an island-shaped upper electrode.

[0163] Here, when the pixels of the display device include three subpixels that emit light of different colors, the three subpixels may include subpixels of three colors R, G, and B, subpixels of three colors yellow (Y), cyan (C), and magenta (M), etc. When the pixels include four subpixels, the four subpixels may include subpixels of four colors R, G, B, and white (W), subpixels of four colors R, G, B, and Y, etc.

[0164] The protective layer (416) and the substrate (452) are bonded together via an adhesive layer (442). A solid sealing structure or a hollow sealing structure may be adopted for sealing the light-emitting element. In FIG. 10, the space (443) surrounded by the substrate (452), the adhesive layer (442), and the substrate (451) is filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure is adopted. The adhesive layer (442) may be provided overlapping with the light-emitting element. Additionally, the space (443) surrounded by the substrate (452), the adhesive layer (442), and the substrate (451) may be filled with a resin different from that of the adhesive layer (442).

[0165] The light-emitting element (430) includes an optical adjustment layer (426) between the pixel electrode and the EL layer. The light-emitting element (430) of the red pixel includes an optical adjustment layer (426a), the light-emitting element (430) of the green pixel includes an optical adjustment layer (426b), and the light-emitting element (430) of the blue pixel includes an optical adjustment layer (426c). For details regarding the light-emitting element, reference may be made to Embodiment 1. Each optical adjustment layer (426) has a different thickness. Additionally, it is preferable that each optical adjustment layer (426) includes the same material having light transmittance and conductivity. As the optical adjustment layer (426), it is preferable to use a conductive metal oxide film containing indium or zinc.

[0166] The pixel electrodes (411a, 411b, 411c) are each connected to a conductive layer (222b) included in the transistor (205) through openings provided in the insulating layer (213), insulating layer (214), and insulating layer (215).

[0167] The ends of the pixel electrode and the optical adjustment layer are covered with an insulating layer (421). The pixel electrode includes a material that reflects visible light, and the counter electrode includes a material that transmits visible light.

[0168] The light emitted from the light-emitting element (430) is emitted to the substrate (452) side through the color filter (415). It is preferable to use a material with high visible light transmittance for the substrate (452).

[0169] A partition (420) is provided on the insulating layer (421). For the partition (420), reference may be made to the description of the partition (120) described in Embodiment 1. The partition (420) is provided in an area that overlaps with the light-blocking layer (417). On the partition (420), a layer is provided that includes a portion of the upper electrodes of two adjacent light-emitting elements separated by the partition (420) and a material identical to the EL layer. Additionally, a protective layer (416) is provided to cover the partition (420).

[0170] The transistor (201) and the transistor (205) are both formed on the substrate (451). These transistors can be manufactured using the same material and the same process.

[0171] On the substrate (451), insulating layers (211), insulating layers (213), insulating layers (215), and insulating layers (214) are provided in this order. A portion of the insulating layer (211) functions as the gate insulating layer of each transistor. A portion of the insulating layer (213) functions as the gate insulating layer of each transistor. The insulating layer (215) is provided to cover the transistor. The insulating layer (214) is provided to cover the transistor and functions as a flattening layer. Additionally, the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers.

[0172] It is desirable to use a material that is resistant to the diffusion of impurities, such as water and hydrogen, in at least one of the insulating layers covering the transistor. This allows the insulating layer to function as a barrier layer. With this configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby increasing the reliability of the display device.

[0173] It is preferable to use an inorganic insulating film for each of the insulating layer (211), insulating layer (213), and insulating layer (215). Examples of inorganic insulating films may include silicon nitride film, silicon nitride film, silicon oxide film, silicon nitride film, aluminum oxide film, aluminum nitride film, etc. Additionally, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may be used. Furthermore, two or more of the above-described insulating films may be laminated and used.

[0174] Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is desirable for the organic insulating film to have an opening near the end of the display device (400A). In this case, it is possible to prevent impurities from entering through the organic insulating film from the end of the display device (400A). Alternatively, the organic insulating film may be formed such that the end of the organic insulating film is located inside the end of the display device (400A), so that the organic insulating film is not exposed at the end of the display device (400A).

[0175] An organic insulating film is suitable for the insulating layer (214) that functions as a flattening layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins.

[0176] In the region (228) shown in FIG. 10, an opening is formed in the insulating layer (214). Accordingly, even when an organic insulating film is used as the insulating layer (214), it is possible to suppress the entry of impurities into the display part (462) from the outside through the insulating layer (214). Therefore, the reliability of the display device (400A) can be increased.

[0177] The transistor (201) and transistor (205) include a conductive layer (221) that functions as a gate, an insulating layer (211) that functions as a gate insulating layer, a conductive layer (222a) and a conductive layer (222b) that functions as a source and drain, a semiconductor layer (231), an insulating layer (213) that functions as a gate insulating layer, and a conductive layer (223) that functions as a gate. Here, multiple layers obtained by processing the same conductive film are shown with the same hatch pattern. The insulating layer (211) is located between the conductive layer (221) and the semiconductor layer (231). The insulating layer (213) is located between the conductive layer (223) and the semiconductor layer (231).

[0178] The structure of the transistor included in the display device of the present embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverse staggered transistor, etc., may be used. In addition, a top-gate type transistor or a bottom-gate type transistor may be used. Alternatively, a gate may be provided above and below the semiconductor layer where the channel is formed.

[0179] The transistor (201) and transistor (205) employ a configuration in which a semiconductor layer in which a channel is formed is fitted with two gates. The transistor may be driven by connecting the two gates and supplying the same signal to them. Alternatively, the threshold voltage of the transistor may be controlled by supplying a potential for controlling the threshold voltage to one of the two gates and supplying a potential for driving to the other gate.

[0180] The crystallinity of the semiconductor material used in the transistor is not particularly limited, and any of amorphous semiconductors, single-crystal semiconductors, and semiconductors having crystallinity other than single crystal (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors containing crystalline regions in part) may be used. Using single-crystal semiconductors or semiconductors having crystallinity is preferable because it can suppress the degradation of transistor characteristics.

[0181] It is preferable that the semiconductor layer of the transistor comprises a metal oxide (also referred to as an oxide semiconductor). That is, in the display device of the present embodiment, it is preferable to use a transistor (hereinafter referred to as an OS transistor) in which a metal oxide is used in the channel forming region. Alternatively, the semiconductor layer of the transistor may comprise silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0182] It is preferable that the semiconductor layer comprises a metal oxide containing indium. In particular, it is preferable that it comprises indium oxide.

[0183] In addition, the semiconductor layer preferably comprises, for example, indium, M (M is one or more types selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more types selected from aluminum, gallium, yttrium, and tin.

[0184] In particular, it is desirable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) in the semiconductor layer.

[0185] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide be greater than or equal to the atomic ratio of M. As for the atomic ratio of metallic elements in such In-M-Zn oxides, the composition is In:M:Zn=1:1:1 or near it, In:M:Zn=1:1:1.2 or near it, In:M:Zn=2:1:3 or near it, In:M:Zn=3:1:2 or near it, In:M:Zn=4:2:3 or near it, In:M:Zn=4:2:4.1 or near it, In:M:Zn=5:1:3 or near it, In:M:Zn=5:1:6 or near it, In:M:Zn=5:1:7 or near it, In:M:Zn=5:1:8 or near it, In:M:Zn=6:1:6 or near it, In:M:Zn=5:2:5 or near it Examples include the nearby composition. Furthermore, the nearby composition refers to a range of ±30% of the desired atomic ratio.

[0186] For example, when the atomic ratio is stated as In:Ga:Zn=4:2:3 or nearby, it includes cases where, with In set to 4, Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. Also, when the atomic ratio is stated as In:Ga:Zn=5:1:6 or nearby, it includes cases where, with In set to 5, Ga is greater than 0.5 and 2 or less, and Zn is 5 or more and 7 or less. Also, when the atomic ratio is stated as In:Ga:Zn=1:1:1 or nearby, it includes cases where, with In set to 1, Ga is greater than 0.5 and 2 or less, and Zn is greater than 0.5 and 2 or less.

[0187] The transistors included in the circuit (464) and the transistors included in the display unit (462) may have the same structure or different structures. For the multiple transistors included in the circuit (464), one structure may be adopted or two or more types of structures may be adopted. Likewise, for the multiple transistors included in the display unit (462), one structure may be adopted or two or more types of structures may be adopted.

[0188] A connection portion (204) is provided in the area where the substrate (452) does not overlap with the substrate (451). In the connection portion (204), wiring (465) is electrically connected to the FPC (472) through a conductive layer (466) and a connection layer (242). An example is shown in which the conductive layer (466) has a stacked structure of a conductive film obtained by processing a conductive film identical to the pixel electrode and a conductive film obtained by processing a conductive film identical to the optical adjustment layer. The conductive layer (466) is exposed on the upper surface of the connection portion (204). By doing so, the connection portion (204) and the FPC (472) can be electrically connected through the connection layer (242).

[0189] It is preferable to provide a light-blocking layer (417) on the side of the substrate (452) on the substrate (451). Additionally, various optical components may be placed on the outer side of the substrate (452). Examples of optical components include a polarizing plate, a phase difference plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-concentrating film. Furthermore, on the outer side of the substrate (452), an antistatic film that suppresses dust adhesion, a water-repellent film that makes it difficult for contamination to adhere, a hard coat film that suppresses damage from use, and a shock-absorbing layer may be placed.

[0190] By providing a protective layer (416) covering the light-emitting element, the entry of impurities such as water into the light-emitting element can be suppressed, thereby increasing the reliability of the light-emitting element.

[0191] It is preferable that the insulating layer (215) and the protective layer (416) come into contact with each other through the opening of the insulating layer (214) in the region (228) near the end of the display device (400A). In particular, it is preferable that the inorganic insulating film included in the insulating layer (215) and the inorganic insulating film included in the protective layer (416) come into contact with each other. This prevents impurities from entering the display part (462) from the outside through the organic insulating film. Therefore, the reliability of the display device (400A) can be increased.

[0192] The protective layer (416) may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends outward beyond the end of the organic insulating film.

[0193] Glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc., may be used for each of the substrate (451) and substrate (452). A material that transmits the light is used for the substrate on the side from which light from the light-emitting element is extracted. If flexible materials are used for the substrate (451) and substrate (452), the flexibility of the display device can be increased. In addition, a polarizing plate may be used as the substrate (451) or substrate (452).

[0194] For each of the substrate (451) and substrate (452), polyester resin such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc., may be used. Glass having a thickness sufficient to provide flexibility may be used as one or both of the substrate (451) and substrate (452).

[0195] In addition, when a circular polarizer is superimposed on a display device, it is desirable to use a substrate with high optical isotropy as the substrate included in the display device. A substrate with high optical isotropy has low birefringence (it can also be said that the amount of birefringence is small).

[0196] The absolute value of the retardation of a substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and more preferably 10 nm or less.

[0197] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0198] In addition, when a film is used as a substrate, there is a risk that shape changes, such as wrinkling, may occur in the display panel if the film absorbs water. Therefore, it is desirable to use a film with a low water absorption rate as a substrate. For example, a film with a water absorption rate preferably 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less is used.

[0199] Various types of curing adhesives, such as photo-curing adhesives like UV-curing adhesives, reaction-curing adhesives, heat-curing adhesives, and anaerobic adhesives, can be used in the adhesive layer (442). Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. In particular, materials with low moisture permeability, such as epoxy resin, are preferred. In addition, a two-component mixed resin may be used. Also, an adhesive sheet may be used.

[0200] As the connecting layer (242), an anisotropic conductive film (ACF), anisotropic conductive paste (ACP), etc. can be used.

[0201] Materials that can be used for conductive layers, such as various wirings and electrodes constituting a display device, in addition to the gate, source, and drain of a transistor, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing said metals as main components. Films containing these materials can be used as a single layer or in a stacked structure.

[0202] In addition, as a conductive material having light transmittance, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene may be used. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing said metallic materials may be used. Alternatively, nitrides of said metallic materials (e.g., titanium nitride) may be used. Furthermore, when using metallic materials or alloy materials (or their nitrides), it is desirable to make them thin enough to have light transmittance. In addition, a laminated film of said materials may be used as a conductive layer. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is desirable because it can increase conductivity. These can be used as conductive layers such as various wirings and electrodes constituting a display device, and as conductive layers included in light-emitting elements (conductive layers functioning as pixel electrodes or common electrodes).

[0203] Insulating materials that can be used for each insulating layer include, for example, resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon nitride, silicon nitride, silicon nitride, and aluminum oxide.

[0204] [Display device (400B)]

[0205] FIG. 11 (A) is a cross-sectional view of a display device (400B). The perspective view of the display device (400B) is the same as that of the display device (400A) (see FIG. 9). FIG. 11 (A) shows an example of a cross-section in which a portion of the area including the FPC (472), a portion of the circuit (464), and a portion of the display unit (462) are each cut out of the display device (400B). FIG. 11 (A) shows an example of a cross-section in which a portion including the light-emitting element (430) provided to the green pixel and the light-emitting element (430) provided to the blue pixel are cut out of the display unit (462). In addition, descriptions of parts such as the display device (400A) may be omitted.

[0206] The display device (400B) shown in (A) of FIG. 11 includes a transistor (202), a transistor (210), a light-emitting element (430), a color filter (415G), a color filter (415B), etc. between the substrate (453) and the substrate (454).

[0207] The substrate (454) and the protective layer (416) are bonded together via an adhesive layer (442). The adhesive layer (442) is provided overlapping each light-emitting element (430), and a solid sealing structure is employed in the display device (400B).

[0208] The substrate (453) and the insulating layer (212) are bonded by an adhesive layer (455).

[0209] In the method of manufacturing a display device (400B), first, a manufacturing substrate provided with an insulating layer (212), each transistor, each light-emitting element, etc., and a substrate (454) provided with a light-blocking layer (417) are bonded by an adhesive layer (442). Then, by peeling off the manufacturing substrate and bonding a substrate (453) to the exposed surface, each component formed on the manufacturing substrate is transferred to the substrate (453). It is preferable that the substrate (453) and the substrate (454) each have flexibility. This increases the flexibility of the display device (400B).

[0210] As the insulating layer (212), an inorganic insulating film that can be used as the insulating layer (211), insulating layer (213), and insulating layer (215) may be used.

[0211] The pixel electrode is connected to a conductive layer (222b) included in the transistor (210) through an opening provided in the insulating layer (214). The conductive layer (222b) is connected to an insulating layer (215) and a low-resistance region (231n) through an opening provided in the insulating layer (225). The transistor (210) has the function of controlling the driving of the light-emitting element.

[0212] The end of the pixel electrode is covered with an insulating layer (421).

[0213] The light emitted from the light-emitting element (430) is emitted to the substrate (454) side through the color filter (415). It is preferable to use a material with high visible light transmittance for the substrate (454).

[0214] A connection portion (204) is provided in the area of ​​the substrate (453) where the substrate (454) does not overlap. In the connection portion (204), wiring (465) is electrically connected to the FPC (472) through a conductive layer (466) and a connection layer (242). The conductive layer (466) can be obtained by processing a conductive film identical to the pixel electrode. In this way, the connection portion (204) and the FPC (472) can be electrically connected through the connection layer (242).

[0215] The transistor (202) and the transistor (210) comprise a conductive layer (221) functioning as a gate, an insulating layer (211) functioning as a gate insulating layer, a semiconductor layer including a channel forming region (231i) and a pair of low-resistance regions (231n), a conductive layer (222a) connected to one of the pair of low-resistance regions (231n), a conductive layer (222b) connected to the other of the pair of low-resistance regions (231n), an insulating layer (225) functioning as a gate insulating layer, a conductive layer (223) functioning as a gate, and an insulating layer (215) covering the conductive layer (223). The insulating layer (211) is located between the conductive layer (221) and the channel forming region (231i). The insulating layer (225) is located between the conductive layer (223) and the channel forming region (231i).

[0216] The conductive layer (222a) and the conductive layer (222b) are each connected to a low-resistance region (231n) through an opening provided in the insulating layer (215). One of the conductive layer (222a) and the conductive layer (222b) functions as a source, and the other functions as a drain.

[0217] In FIG. 11 (A), an example is shown in which an insulating layer (225) covers the upper and side surfaces of a semiconductor layer. The conductive layer (222a) and the conductive layer (222b) are connected to a low-resistance region (231n) through openings provided in the insulating layer (225) and the insulating layer (215), respectively.

[0218] Meanwhile, in the transistor (209) shown in (B) of FIG. 11, the insulating layer (225) overlaps with the channel forming region (231i) of the semiconductor layer (231) and does not overlap with the low-resistance region (231n). For example, the structure shown in (B) of FIG. 11 can be fabricated by processing the insulating layer (225) using a conductive layer (223) as a mask. In (B) of FIG. 11, an insulating layer (215) is provided by covering the insulating layer (225) and the conductive layer (223), and the conductive layer (222a) and the conductive layer (222b) are each connected to the low-resistance region (231n) through the opening of the insulating layer (215). Additionally, an insulating layer (218) covering the transistor may be provided.

[0219] The configuration examples and corresponding drawings, etc. exemplified in this embodiment may be appropriately combined with at least a part thereof with other configuration examples or drawings, etc.

[0220] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0221] (Embodiment 3)

[0222] In this embodiment, an example of a display device configuration different from the above is described.

[0223] The display device of the present embodiment can be a fixed-precision display device. Accordingly, the display device of the present embodiment can be used in the display portion of a wearable device that can be mounted on the head, such as an information terminal (wearable device) such as a wristwatch type or a bracelet type, a VR device such as a head-mounted display, or an AR device such as glasses type.

[0224] [Display Module]

[0225] FIG. 12 (A) is a perspective view of a display module (280). The display module (280) includes a display device (400C) and an FPC (290). Additionally, the display device included in the display module (280) is not limited to the display device (400C) and may be the display device (400D) or display device (400E) described later.

[0226] The display module (280) includes a substrate (291) and a substrate (292). The display module (280) has a display section (281). The display section (281) is an area for displaying an image in the display module (280) and is an area where light from each pixel provided to the pixel section (284), which will be described later, can be visually observed.

[0227] FIG. 12 (B) is a schematic perspective view showing the configuration of the substrate (291). A circuit section (282), a pixel circuit section (283) on the circuit section (282), and a pixel section (284) on the pixel circuit section (283) are stacked on the substrate (291). Additionally, a terminal section (285) for connecting to an FPC (290) is provided on the substrate (291) in a portion that does not overlap with the pixel section (284). The terminal section (285) and the circuit section (282) are electrically connected through a wiring section (286) composed of multiple wires.

[0228] The pixel section (284) includes a plurality of pixels (284a) arranged periodically. An enlarged view of one pixel (284a) is shown on the right side of (B) in FIG. 12. The pixel (284a) includes pixels (430a), pixels (430b), and pixels (430c) of different colors. Pixels (430a), pixels (430b), and pixels (430c) each include a light-emitting element (430). The plurality of pixels included in the pixel (284a) may be arranged in a stripe array as shown in (B) of FIG. 12. Since a stripe array allows for the arrangement of pixel circuits at a high density, it can provide a high-definition display device. In addition, various arrangement methods such as a delta array and a pentile array may be adopted.

[0229] The pixel circuit section (283) includes a plurality of pixel circuits (283a) arranged periodically.

[0230] A single pixel circuit (283a) is a circuit that controls the light emission of three light-emitting elements included in a single pixel (284a). A single pixel circuit (283a) may be provided with three circuits that control the light emission of a single light-emitting element. For example, the pixel circuit (283a) may include at least one select transistor, one current control transistor (driving transistor), and a capacitance element for each light-emitting element. At this time, a gate signal is input to the gate of the select transistor, and a source signal is input to one of the source and drain. By this, an active matrix type display device is realized.

[0231] The circuit section (282) includes a circuit that drives each pixel circuit (283a) of the pixel circuit section (283). For example, it is preferable to include one or both of a gate line driving circuit and a source line driving circuit. In addition to these, it may include at least one of an operation circuit, a memory circuit, and a power circuit.

[0232] The FPC (290) functions as a wiring for supplying video signals or power potentials, etc., to the circuit section (282) from the outside. Additionally, an IC may be mounted on the FPC (290).

[0233] Since the display module (280) may have a configuration in which one or both of the pixel circuit section (283) and the circuit section (282) are overlapped below the pixel section (284), the aperture ratio (ratio of effective display area) of the display section (281) can be made very high. For example, the aperture ratio of the display section (281) can be 40% or more and less than 100%, preferably 50% or more and less than 95%, and more preferably 60% or more and less than 95%. In addition, the pixels (284a) can be arranged at a very high density, so the precision of the display section (281) can be made very high. For example, it is preferable that pixels (284a) be arranged in the display unit (281) with a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, more preferably 6000 ppi or more, and 20000 ppi or less or 30000 ppi or less.

[0234] Since this display module (280) has a very high level of resolution, it can be used in VR devices such as head-mounted displays or glasses-type AR devices. For example, even in a configuration where the display portion of the display module (280) is viewed through a lens, the display module (280) includes a display portion (281) with a very high level of resolution, so even if the display portion is magnified by a lens, pixels are not perceived by the eye, allowing for a highly immersive display. Furthermore, the display module (280) is not limited to this and can be used in electronic devices having a relatively small display portion. For example, it can be used in the display portion of a wearable electronic device such as a wristwatch.

[0235] [Display device (400C)]

[0236] The display device (400C) shown in FIG. 13 includes a substrate (301), a plurality of light-emitting elements (430), a capacitive element (240), a color filter (415R), a color filter (415G), a color filter (415B), a transistor (310), etc.

[0237] The substrate (301) corresponds to the substrate (291) in (A) and (B) of FIG. 12.

[0238] The transistor (310) is a transistor that includes a channel forming region on a substrate (301). As the substrate (301), a semiconductor substrate, such as a single-crystal silicon substrate, may be used. The transistor (310) includes a portion of the substrate (301), a conductive layer (311), a low-resistance region (312), an insulating layer (313), and an insulating layer (314). The conductive layer (311) functions as a gate electrode. The insulating layer (313) is located between the substrate (301) and the conductive layer (311) and functions as a gate insulating layer. The low-resistance region (312) is an area on the substrate (301) doped with impurities and functions as either a source or a drain. The insulating layer (314) is provided to cover the side of the conductive layer (311).

[0239] In addition, a device isolation layer (315) is provided between two adjacent transistors (310) so as to be embedded in the substrate (301).

[0240] Additionally, an insulating layer (261) is provided over the transistor (310), and a capacitive element (240) is provided on the insulating layer (261).

[0241] A capacitive element (240) includes a conductive layer (241), a conductive layer (245), and an insulating layer (243) located between them. The conductive layer (241) functions as one electrode of the capacitive element (240), the conductive layer (245) functions as the other electrode of the capacitive element (240), and the insulating layer (243) functions as a dielectric of the capacitive element (240).

[0242] A conductive layer (241) is provided on an insulating layer (261) and embedded in an insulating layer (254). The conductive layer (241) is electrically connected to one of the source and drain of a transistor (310) through a plug (271) embedded in the insulating layer (261). An insulating layer (243) is provided covering the conductive layer (241). A conductive layer (245) is provided in an area overlapping with the conductive layer (241) through the insulating layer (243).

[0243] An insulating layer (255) is provided over the capacitive element (240), and each light-emitting element (430), etc., is provided on the insulating layer (255). A protective layer (416) is provided on the light-emitting element (430), and a substrate (401) is bonded to the upper surface of the protective layer (416) by a resin layer (419). The substrate (401) corresponds to the substrate (292) in (A) of FIG. 12.

[0244] The pixel electrode of the light-emitting element is electrically connected to one of the source and drain of the transistor (310) through a plug (256) embedded in the insulating layer (255), a conductive layer (241) embedded in the insulating layer (254), and a plug (271) embedded in the insulating layer (261).

[0245] An insulating layer (421) is provided to cover the end of the pixel electrode. It is preferable to use an inorganic insulating material for the insulating layer (421). For example, inorganic insulating materials such as silicon oxide, silicon nitride, and aluminum oxide may be used.

[0246] A partition (420) is provided on the insulating layer (421). For the partition (420), reference may be made to the description of the partition (120) described in Embodiment 1. A layer is provided on the partition (420) that includes a part of the upper electrode of the light-emitting element and the same material as the EL layer.

[0247] [Display device (400D)]

[0248] The display device (400D) shown in FIG. 14 has a transistor configuration that is mainly different from that of the display device (400C). Also, the description of parts that are the same as those of the display device (400C) may be omitted.

[0249] The transistor (320) is a transistor in which a metal oxide (also called an oxide semiconductor) is used in the semiconductor layer where the channel is formed.

[0250] The transistor (320) includes a semiconductor layer (321), an insulating layer (323), a conductive layer (324), a pair of conductive layers (325), an insulating layer (326), and a conductive layer (327).

[0251] The substrate (331) corresponds to the substrate (291) in (A) and (B) of FIG. 12. As the substrate (331), an insulating substrate or a semiconductor substrate may be used.

[0252] An insulating layer (332) is provided on a substrate (331). The insulating layer (332) functions as a barrier layer to prevent impurities, such as water or hydrogen, from diffusing from the substrate (331) to the transistor (320), and to prevent oxygen from escaping from the semiconductor layer (321) to the insulating layer (332). As the insulating layer (332), a film that is more difficult for hydrogen or oxygen to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, may be used.

[0253] A conductive layer (327) is provided on an insulating layer (332), and an insulating layer (326) is provided over the conductive layer (327). The conductive layer (327) functions as the first gate electrode of the transistor (320), and a portion of the insulating layer (326) functions as the first gate insulating layer. It is preferable to use an oxide insulating film, such as a silicon oxide film, in the portion of the insulating layer (326) that contacts at least the semiconductor layer (321). It is preferable that the upper surface of the insulating layer (326) be flattened.

[0254] A semiconductor layer (321) is provided on an insulating layer (326). The semiconductor layer (321) preferably comprises a metal oxide film (also called an oxide semiconductor) having semiconductor properties. Details regarding materials suitable for use in the semiconductor layer (321) will be described later.

[0255] A pair of conductive layers (325) are provided in contact with the semiconductor layer (321) and function as a source electrode and a drain electrode.

[0256] Additionally, an insulating layer (328) is provided by covering the upper and side surfaces of a pair of conductive layers (325) and the side surface of a semiconductor layer (321), and an insulating layer (264) is provided on top of the insulating layer (328). The insulating layer (328) functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing from the insulating layer (264) to the semiconductor layer (321), and to prevent oxygen from escaping from the semiconductor layer (321). An insulating film such as the insulating layer (332) can be used as the insulating layer (328).

[0257] An opening reaching the semiconductor layer (321) is provided in the insulating layer (328) and the insulating layer (264). Inside the opening, an insulating layer (323) and a conductive layer (324) are embedded in contact with the side of the insulating layer (264), the insulating layer (328), and the conductive layer (325), as well as the upper surface of the semiconductor layer (321). The conductive layer (324) functions as a second gate electrode, and the insulating layer (323) functions as a second gate insulating layer.

[0258] The upper surface of the conductive layer (324), the upper surface of the insulating layer (323), and the upper surface of the insulating layer (264) are each flattened so that their heights substantially match, and an insulating layer (329) and an insulating layer (265) are provided over them.

[0259] The insulating layer (264) and the insulating layer (265) function as interlayer insulating layers. The insulating layer (329) functions as a barrier layer that prevents impurities, such as water or hydrogen, from diffusing from the insulating layer (265) and the like into the transistor (320). As the insulating layer (329), an insulating film such as the insulating layer (328) and the insulating layer (332) can be used.

[0260] A plug (274) electrically connected to one of a pair of conductive layers (325) is provided to be embedded in an insulating layer (265), an insulating layer (329), and an insulating layer (264). Here, the plug (274) preferably comprises a conductive layer (274a) covering a portion of the side of the opening of each of the insulating layer (265), the insulating layer (329), the insulating layer (264), and the insulating layer (328) and the upper surface of the conductive layer (325), and a conductive layer (274b) in contact with the upper surface of the conductive layer (274a). In this case, it is preferable to use a conductive material in which hydrogen and oxygen are difficult to diffuse in the conductive layer (274a).

[0261] The configuration from the insulating layer (254) to the substrate (401) in the display device (400D) is the same as that of the display device (400C).

[0262] [Display device (400E)]

[0263] The display device (400E) shown in FIG. 15 has a configuration in which a transistor (310) in which a channel is formed on a substrate (301) and a transistor (320) containing a metal oxide in which a channel is formed is stacked on a semiconductor layer in which a channel is formed. In addition, descriptions of parts such as the display device (400C, 400D) may be omitted.

[0264] An insulating layer (261) is provided over the transistor (310), and a conductive layer (251) is provided on the insulating layer (261). Additionally, an insulating layer (262) is provided over the conductive layer (251), and a conductive layer (252) is provided on the insulating layer (262). The conductive layer (251) and the conductive layer (252) each function as wiring. Additionally, an insulating layer (263) and an insulating layer (332) are provided over the conductive layer (252), and a transistor (320) is provided on the insulating layer (332). Additionally, an insulating layer (265) is provided over the transistor (320), and a capacitive element (240) is provided on the insulating layer (265). The capacitive element (240) and the transistor (320) are electrically connected through a plug (274).

[0265] The transistor (320) can be used as a transistor that constitutes a pixel circuit. Additionally, the transistor (310) can be used as a transistor that constitutes a pixel circuit or as a transistor that constitutes a driving circuit (gate line driving circuit, source line driving circuit) for driving the pixel circuit. Furthermore, the transistor (310) and the transistor (320) can be used as transistors that constitute various circuits, such as an operation circuit or a memory circuit.

[0266] In this configuration, since not only the pixel circuit but also the driving circuit can be formed directly below the light-emitting element, the display device can be miniaturized compared to the case where the driving circuit is provided around the display area.

[0267] The configuration examples and corresponding drawings, etc. exemplified in this embodiment may be appropriately combined with at least a part thereof with other configuration examples or drawings, etc.

[0268] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0269] (Embodiment 4)

[0270] In this embodiment, a light-emitting element (also called a light-emitting device) that can be used in a display device which is one form of the present invention is described.

[0271] In the present specification and the like, a light-emitting device (also called a light-emitting element) includes an EL layer between a pair of electrodes. The EL layer includes at least a light-emitting layer. Here, the layers included in the EL layer (also called functional layers) may include a light-emitting layer, a carrier injection layer (hole injection layer and electron injection layer), a carrier transport layer (hole transport layer and electron transport layer), and a carrier blocking layer (hole blocking layer and electron blocking layer).

[0272] In the present specification and other documents, a device manufactured using a metal mask or FMM (fine metal mask, high-precision metal mask) may be referred to as a device having an MM (metal mask) structure. Additionally, in the present specification and other documents, a device manufactured without using a metal mask or FMM may be referred to as a device having an MML (metal maskless) structure.

[0273] In addition, in this specification and other contexts, a structure in which the light-emitting layers of each color light-emitting device (here, blue (B), green (G), and red (R)) are formed separately or individually coated is referred to as an SBS (Side By Side) structure. Since the SBS structure allows for the optimization of materials and composition for each light-emitting device, the degree of freedom in selecting materials and composition is increased, thereby enabling easy improvement of brightness and reliability. Furthermore, in this specification and other contexts, a light-emitting device capable of emitting white light is referred to as a white light-emitting device. Additionally, a full-color display device can be obtained by combining a white light-emitting device with a coloring layer (e.g., a color filter).

[0274] In the present specification and other documents, holes or electrons may be referred to as "carriers." Specifically, a hole injection layer or an electron injection layer may be referred to as a "carrier injection layer," a hole transport layer or an electron transport layer as a "carrier transport layer," and a hole blocking layer or an electron blocking layer as a "carrier blocking layer." Furthermore, the aforementioned carrier injection layer, carrier transport layer, and carrier blocking layer may not be clearly distinguishable. Additionally, a single layer may have two or three functions among a carrier injection layer, a carrier transport layer, and a carrier blocking layer.

[0275] [Light-emitting device]

[0276] Light-emitting devices can be broadly classified into single structures and tandem structures. A device having a single structure includes a single light-emitting unit between a pair of electrodes. The light-emitting unit uses a configuration that includes one or more light-emitting layers. To obtain white light emission in a single structure, it is preferable to select light-emitting layers capable of realizing white light through the emission of each of two or more light-emitting layers. For example, in the case of two colors, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary colors, a configuration can be obtained in which the entire light-emitting device emits white light. Furthermore, when obtaining white light emission using three or more light-emitting layers, it is preferable to enable the entire light-emitting device to emit white light by mixing the emission colors of each of the three or more light-emitting layers.

[0277] A device having a tandem structure includes multiple light-emitting units between a pair of electrodes. Each light-emitting unit uses a configuration that includes one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the brightness per given current can be increased, and a light-emitting device with higher reliability than that having a single structure can be obtained. To obtain white light emission in a tandem structure, it is preferable to adopt a configuration in which white light emission is obtained by combining light from the light-emitting layers of multiple light-emitting units. Furthermore, the combination of light-emitting colors that obtain white light emission is the same as that of a single structure. Additionally, in a device having a tandem structure, it is suitable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0278] When comparing a white light-emitting device with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. Meanwhile, since the manufacturing process for the white light-emitting device is simpler than that of the light-emitting device having an SBS structure, manufacturing costs can be reduced and manufacturing yield can be increased.

[0279] As shown in (A) of FIG. 16, the light-emitting device includes an EL layer (763) between a pair of electrodes (lower electrode (761) and upper electrode (762)). The EL layer (763) may be composed of a plurality of layers, such as a layer (780), a light-emitting layer (771), and a layer (790).

[0280] The light-emitting layer (771) includes at least a light-emitting material (also called a light-emitting material).

[0281] When the lower electrode (761) is the positive electrode and the upper electrode (762) is the negative electrode, the layer (780) comprises one or more of a layer containing a material with high hole injection properties (hole injection layer), a layer containing a material with high hole transport properties (hole transport layer), and a layer containing a material with high electron blocking properties (electron blocking layer). Additionally, the layer (790) comprises one or more of a layer containing a material with high electron injection properties (electron injection layer), a layer containing a material with high electron transport properties (electron transport layer), and a layer containing a material with high hole blocking properties (hole blocking layer). When the lower electrode (761) is the negative electrode and the upper electrode (762) is the positive electrode, the configuration of the layer (780) and the layer (790) is opposite to that of the above.

[0282] A configuration including a layer (780), a light-emitting layer (771), and a layer (790) provided between a pair of electrodes can function as a single light-emitting unit, and in this specification, the configuration of (A) in FIG. 16 is referred to as a single structure.

[0283] Additionally, FIG. 16 (B) shows a modified example of the EL layer (763) included in the light-emitting device shown in FIG. 16 (A). Specifically, the light-emitting device shown in FIG. 16 (B) includes a layer (781) above a lower electrode (761), a layer (782) above the layer (781), a light-emitting layer (771) above the layer (782), a layer (791) above the light-emitting layer (771), a layer (792) above the layer (791), and an upper electrode (762) above the layer (792).

[0284] In the case where the lower electrode (761) is the positive electrode and the upper electrode (762) is the negative electrode, for example, layer (781) can be a hole injection layer, layer (782) can be a hole transport layer, layer (791) can be an electron transport layer, and layer (792) can be an electron injection layer. Also, in the case where the lower electrode (761) is the negative electrode and the upper electrode (762) is the positive electrode, layer (781) can be an electron injection layer, layer (782) can be an electron transport layer, layer (791) can be a hole transport layer, and layer (792) can be a hole injection layer. In such a layer structure, carriers can be efficiently injected into the light-emitting layer (771), and the efficiency of carrier recombination within the light-emitting layer (771) can be increased.

[0285] In addition, as shown in FIG. 16 (C) and (D), a configuration in which a plurality of light-emitting layers (light-emitting layers (771, 772, 773)) are provided between layer (780) and layer (790) is also a variation of the single structure. Also, FIG. 16 (C) and (D) show an example including three light-emitting layers, but the light-emitting layers in a light-emitting device having a single structure may be two or four or more.

[0286] In addition, a light-emitting device having a single structure may include a buffer layer between two light-emitting layers.

[0287] In addition, as shown in (E) and (F) of FIG. 16, a configuration in which a plurality of light-emitting units (light-emitting unit (763a) and light-emitting unit (763b)) are connected in series with a charge-generating layer (785) (also called an intermediate layer) in between is referred to as a tandem structure. The tandem structure may also be referred to as a stack structure. By adopting a tandem structure, a light-emitting device capable of high-brightness light emission can be realized. Furthermore, since the tandem structure can reduce the current required to obtain the same brightness compared to the case where a single structure is adopted, reliability can be increased.

[0288] Additionally, FIG. 16 (D) and (F) illustrate examples in which a display device includes a layer (764) that overlaps with a light-emitting device. FIG. 16 (D) illustrates an example in which the layer (764) overlaps with the light-emitting device shown in FIG. 16 (C), and FIG. 16 (F) illustrates an example in which the layer (764) overlaps with the light-emitting device shown in FIG. 16 (E). In FIG. 16 (D) and (F), since light is extracted on the upper electrode (762) side, a conductive film that transmits visible light is used on the upper electrode (762).

[0289] As the layer (764), one or both of the color conversion layer and the color filter (coloring layer) may be used.

[0290] In FIG. 16 (C) and (D), a light-emitting material that emits light of the same color may be used for the light-emitting layer (771), the light-emitting layer (772), and the light-emitting layer (773), or the same light-emitting material may be used. For example, a light-emitting material that emits blue light may be used for the light-emitting layer (771), the light-emitting layer (772), and the light-emitting layer (773). In the subpixels that display blue light, blue light emitted from the light-emitting device can be extracted. In addition, in the subpixels that display red light and the subpixels that display green light, a color conversion layer is provided as the layer (764) shown in FIG. 16 (D), so that the blue light emitted from the light-emitting device is converted into light of a longer wavelength, and thus red light or green light can be extracted. In addition, it is preferable to use both the color conversion layer and the coloring layer as the layer (764). There may be cases where some of the light emitted from the light-emitting device is not converted and passes through the color conversion layer. As light transmitted through the color conversion layer is extracted through the coloring layer, light other than the light of the desired color is absorbed by the coloring layer, and the color purity of the light displayed by the subpixel can be increased.

[0291] In addition, in Figures 16 (C) and (D), a light-emitting material having a different light-emitting color may be used for each of the light-emitting layer (771), the light-emitting layer (772), and the light-emitting layer (773). When the light emitted by each of the light-emitting layer (771), the light-emitting layer (772), and the light-emitting layer (773) is in a complementary color relationship, white light emission is obtained. For example, a light-emitting device having a single structure preferably includes a light-emitting layer containing a light-emitting material that emits blue light and a light-emitting layer containing a light-emitting material that emits visible light with a wavelength longer than blue.

[0292] A color filter may be provided as the layer (764) shown in (D) of FIG. 16. White light can be passed through the color filter to obtain light of a desired color.

[0293] For example, when a light-emitting device having a single structure includes three light-emitting layers, it is preferable to include a light-emitting layer containing a light-emitting material that emits red (R) light, a light-emitting layer containing a light-emitting material that emits green (G) light, and a light-emitting layer containing a light-emitting material that emits blue (B) light. The stacking order of the light-emitting layers may be R, G, B from the anode side, or R, B, G, etc. from the anode side. In this case, a buffer layer may be provided between R and G or between R and B.

[0294] In addition, for example, when a light-emitting device having a single structure includes two light-emitting layers, it is preferable to include a light-emitting layer containing a light-emitting material that emits blue (B) light and a light-emitting layer containing a light-emitting material that emits yellow (Y) light. This configuration is sometimes referred to as a BY single structure.

[0295] It is preferable for a light-emitting device that emits white light to include two or more types of light-emitting materials. To obtain white light emission, it is desirable to select a light-emitting material such that the light emission colors of the two light-emitting materials are complementary colors, or to select a light-emitting material such that the light emission of two or more light-emitting materials is mixed to produce white light. For example, when obtaining white light emission using two light-emitting layers, it is desirable to select a light-emitting material such that the light emission colors of the two light-emitting layers are complementary colors. For example, by making the light emission color of the first light-emitting layer and the light emission color of the second light-emitting layer complementary colors, a light-emitting device that emits white light as a whole can be obtained. Furthermore, when obtaining white light emission using three or more light-emitting layers, it is desirable to enable the light-emitting device to emit white light as a whole by mixing the light emission colors of the three or more light-emitting layers.

[0296] In addition, in (C) and (D) of FIG. 16, as shown in (B) of FIG. 16, the layer (780) and the layer (790) may each have a stacked structure consisting of two or more layers independently.

[0297] Additionally, in (E) and (F) of FIG. 16, a light-emitting material that emits light of the same color may be used for the light-emitting layer (771) and the light-emitting layer (772), or the same light-emitting material may be used. For example, in the light-emitting device included in the subpixels that display light of each color, a light-emitting material that emits blue light may be used for each of the light-emitting layer (771) and the light-emitting layer (772). In the subpixels that display blue light, blue light emitted from the light-emitting device can be extracted. Also, in the subpixels that display red light and the subpixels that display green light, by providing a color conversion layer as the layer (764) shown in (F) of FIG. 16, the blue light emitted from the light-emitting device is converted into light of a longer wavelength, so red light or green light can be extracted. Additionally, it is preferable to use both the color conversion layer and the coloring layer as the layer (764).

[0298] In addition, in (E) and (F) of FIG. 16, a light-emitting material having a different light-emitting color may be used for the light-emitting layer (771) and the light-emitting layer (772). When the light emitted by the light-emitting layer (771) and the light-emitting layer (772) is in a complementary color relationship, white light emission is obtained. A color filter may be provided as the layer (764) shown in (F) of FIG. 16. By passing white light through the color filter, light of a desired color can be obtained.

[0299] Additionally, Figures 16 (E) and (F) illustrate an example in which the light-emitting unit (763a) includes one light-emitting layer (771) and the light-emitting unit (763b) includes one light-emitting layer (772), but are not limited thereto. The light-emitting unit (763a) and the light-emitting unit (763b) may each include two or more light-emitting layers.

[0300] In addition, Figures 16 (E) and (F) illustrate a light-emitting device including two light-emitting units, but are not limited thereto. The light-emitting device may include three or more light-emitting units. Furthermore, a configuration including two light-emitting units may be referred to as a two-stage tandem structure, and a configuration including three light-emitting units may be referred to as a three-stage tandem structure.

[0301] Also, in (E) and (F) of FIG. 16, the light-emitting unit (763a) includes a layer (780a), a light-emitting layer (771), and a layer (790a), and the light-emitting unit (763b) includes a layer (780b), a light-emitting layer (772), and a layer (790b).

[0302] When the lower electrode (761) is the positive electrode and the upper electrode (762) is the negative electrode, layer (780a) and layer (780b) each include one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. Additionally, layer (790a) and layer (790b) each include one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. When the lower electrode (761) is the negative electrode and the upper electrode (762) is the positive electrode, the configuration of layer (780a) and layer (790a) is opposite to the above, and the configuration of layer (780b) and layer (790b) is also opposite to the above.

[0303] When the lower electrode (761) is the positive electrode and the upper electrode (762) is the negative electrode, for example, layer (780a) may include a hole injection layer and a hole transport layer above the hole injection layer, and may further include an electron blocking layer above the hole transport layer. Additionally, layer (790a) may include an electron transport layer and may further include a hole blocking layer between the light-emitting layer (771) and the electron transport layer. Additionally, layer (780b) may include a hole transport layer and may further include an electron blocking layer above the hole transport layer. Additionally, layer (790b) may include an electron transport layer and an electron injection layer above the electron transport layer, and may further include a hole blocking layer between the light-emitting layer (772) and the electron transport layer. When the lower electrode (761) is the negative electrode and the upper electrode (762) is the positive electrode, for example, layer (780a) may include an electron injection layer and an electron transport layer above the electron injection layer, and may further include a hole blocking layer above the electron transport layer. Additionally, layer (790a) may include a hole transport layer and may further include an electron blocking layer between the light-emitting layer (771) and the hole transport layer. Additionally, layer (780b) may include an electron transport layer and may further include a hole blocking layer above the electron transport layer. Additionally, layer (790b) may include a hole transport layer and a hole injection layer above the hole transport layer, and may further include an electron blocking layer between the light-emitting layer (772) and the hole transport layer.

[0304] In addition, when manufacturing a light-emitting device having a tandem structure, two light-emitting units are stacked with a charge generating layer (785) interposed therein. The charge generating layer (785) has the function of injecting electrons into one of the two light-emitting units and injecting holes into the other when a voltage is applied between a pair of electrodes.

[0305] In addition, as an example of a light-emitting device having a tandem structure, the configurations shown in (A) to (C) of FIG. 17 can be cited.

[0306] In FIG. 17 (A), a configuration including three light-emitting units is shown. In FIG. 17 (A), a plurality of light-emitting units (light-emitting unit (763a), light-emitting unit (763b), and light-emitting unit (763c)) are each connected in series with a charge-generating layer (785) in between. Additionally, the light-emitting unit (763a) includes a layer (780a), a light-emitting layer (771), and a layer (790a); the light-emitting unit (763b) includes a layer (780b), a light-emitting layer (772), and a layer (790b); and the light-emitting unit (763c) includes a layer (780c), a light-emitting layer (773), and a layer (790c). Additionally, the layer (780c) may use the configuration that can be used for the layer (780a) and the layer (780b), and the layer (790c) may use the configuration that can be used for the layer (790a) and the layer (790b).

[0307] In (A) of FIG. 17, the light-emitting layer (771), the light-emitting layer (772), and the light-emitting layer (773) may include a light-emitting material that emits light of the same color. Specifically, the light-emitting layer (771), the light-emitting layer (772), and the light-emitting layer (773) may all include a light-emitting material of blue (B) (having a so-called B / B / B three-stage tandem structure). Also, “b / a” means that a light-emitting unit including a light-emitting material that emits b light is provided with a charge-generating layer in between, above a light-emitting unit including a light-emitting material that emits a light, and a and b represent colors.

[0308] In addition, in (A) of FIG. 17, some or all of the light-emitting layer (771), light-emitting layer (772), and light-emitting layer (773) may use a light-emitting material with different light-emitting colors. As combinations of light-emitting colors of the light-emitting layer (771), light-emitting layer (772), and light-emitting layer (773), for example, there is a configuration in which two of them are blue (B) and the other one is yellow (Y), and a configuration in which one of them is red (R), another one is green (G), and the other one is blue (B).

[0309] In addition, the composition of the light-emitting materials that each emit light of the same color is not limited to the above. For example, as shown in (B) of FIG. 17, a tandem light-emitting device comprising a plurality of light-emitting layers stacked may be adopted. In the configuration shown in (B) of FIG. 17, two light-emitting units (light-emitting unit (763a) and light-emitting unit (763b)) are connected in series with a charge-generating layer (785) in between. Additionally, the light-emitting unit (763a) includes a layer (780a), a light-emitting layer (771a), a light-emitting layer (771b), a light-emitting layer (771c), and a layer (790a), and the light-emitting unit (763b) includes a layer (780b), a light-emitting layer (772a), a light-emitting layer (772b), a light-emitting layer (772c), and a layer (790b).

[0310] In the configuration shown in FIG. 17 (B), by selecting a light-emitting material that emits light of a complementary color for the light-emitting layer (771a), the light-emitting layer (771b), and the light-emitting layer (771c), the light-emitting unit (763a) is configured to emit white (W) light. Additionally, by selecting a light-emitting material that emits light of a complementary color for the light-emitting layer (772a), the light-emitting layer (772b), and the light-emitting layer (772c), the light-emitting unit (763b) is configured to emit white (W) light. That is, the configuration shown in FIG. 17 (B) is a two-stage tandem structure of W / W. Furthermore, the stacking order of the light-emitting materials that emit light of a complementary color is not particularly limited. An implementer may appropriately select the optimal stacking order. Also, although not shown, a three-stage tandem structure of W / W / W or a tandem structure of four or more stages may be adopted.

[0311] In addition, in the case of a light-emitting device having a tandem structure, a two-stage tandem structure of B / Y or Y / B including a light-emitting unit emitting yellow (Y) light and a light-emitting unit emitting blue (B) light; a two-stage tandem structure of R·G / B or B / R·G including a light-emitting unit emitting red (R) light and green (G) light and a light-emitting unit emitting blue (B) light; a three-stage tandem structure of B / Y / B including a light-emitting unit emitting blue (B) light, a light-emitting unit emitting yellow (Y) light, and a light-emitting unit emitting blue (B) light in this order; a three-stage tandem structure of B / YG / B including a light-emitting unit emitting blue (B) light, a light-emitting unit emitting yellow-green (YG) light, and a light-emitting unit emitting blue (B) light in this order; a light-emitting unit emitting blue (B) light, a light-emitting unit emitting green (G) light, and a light-emitting unit emitting blue (B) light. A three-stage tandem structure of B / G / B containing the units in this order may be adopted. Additionally, "a·b" means that one light-emitting unit includes a light-emitting material that emits light of a and a light-emitting material that emits light of b.

[0312] In addition, as shown in (C) of FIG. 17, a light-emitting unit including one light-emitting layer and a light-emitting unit including multiple light-emitting layers may be combined.

[0313] Specifically, in the configuration shown in (C) of FIG. 17, a plurality of light-emitting units (light-emitting unit (763a), light-emitting unit (763b), and light-emitting unit (763c)) are each connected in series with a charge-generating layer (785) in between. Additionally, the light-emitting unit (763a) includes a layer (780a), a light-emitting layer (771), and a layer (790a), the light-emitting unit (763b) includes a layer (780b), a light-emitting layer (772a), a light-emitting layer (772b), a light-emitting layer (772c), and a layer (790b), and the light-emitting unit (763c) includes a layer (780c), a light-emitting layer (773), and a layer (790c).

[0314] For example, in the configuration shown in (C) of FIG. 17, a three-stage tandem structure of B / R·G·YG / B can be adopted, in which the light-emitting unit (763a) is a light-emitting unit that emits blue (B) light, the light-emitting unit (763b) is a light-emitting unit that emits red (R) light, green (G) light, and yellow-green (YG) light, and the light-emitting unit (763c) is a light-emitting unit that emits blue (B) light.

[0315] For example, regarding the number of layers and color order of the light-emitting unit, a two-stage structure of B and Y from the anode side, a two-stage structure of B and light-emitting unit X, a three-stage structure of B, Y, and B, and a three-stage structure of B, X, and B may be provided. Regarding the number of layers and color order of the light-emitting layer in light-emitting unit X, a two-layer structure of R and Y from the anode side, a two-layer structure of R and G, a two-layer structure of G and R, a three-layer structure of G, R, and G, or a three-layer structure of R, G, and R may be provided. Additionally, another layer may be provided between the two light-emitting layers.

[0316] Next, materials that can be used in light-emitting devices will be described.

[0317] Among the lower electrode (761) and the upper electrode (762), the electrode on the side that extracts light uses a conductive film that transmits visible light. Additionally, it is preferable to use a conductive film that reflects visible light for the electrode on the side that does not extract light. Furthermore, if the display device includes a light-emitting device that emits infrared light, it is preferable to use a conductive film that transmits visible light and infrared light for the electrode on the side that extracts light, and a conductive film that reflects visible light and infrared light for the electrode on the side that does not extract light.

[0318] In addition, a conductive film that transmits visible light may also be used as the electrode on the side that does not extract light. In this case, it is preferable to place the electrode between the reflective layer and the EL layer (763). That is, light emitted from the EL layer (763) may be reflected by the reflective layer and extracted from the display device.

[0319] As a material forming a pair of electrodes of a light-emitting device, metals, alloys, electrically conductive compounds, and mixtures thereof may be appropriately used. Specifically, the above materials may include metals such as aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, and alloys containing a suitable combination thereof. In addition, the above materials may include indium tin oxide (also called In-Sn oxide, ITO), in-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), and in-W-Zn oxide. In addition, the above materials may include aluminum-containing alloys (aluminum alloys), such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and silver-containing alloys, such as an alloy of silver and magnesium, and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). In addition to these, the above materials may include elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (e.g., lithium, cesium, calcium, strontium), rare earth metals such as europium and ytterbium, alloys containing a suitable combination of these, graphene, etc.

[0320] It is preferable that the light-emitting device employs a micro-optical resonator (microcavity) structure. Accordingly, it is preferable that one of the pair of electrodes of the light-emitting device includes an electrode having visible light transmittance and visible light reflectivity (a semi-transparent and semi-reflective electrode), and the other includes an electrode having visible light reflectivity (a reflective electrode). When the light-emitting device has a microcavity structure, the light emitted from the light-emitting layer can be resonated between the two electrodes to amplify the light emitted from the light-emitting device.

[0321] In addition, the semi-transparent and semi-reflective electrode may have a stacked structure of a conductive layer that can be used as a reflective electrode and a conductive layer that can be used as an electrode with visible light transmittance (also called a transparent electrode).

[0322] The light transmittance of the transparent electrode shall be 40% or higher. For example, for the transparent electrode of a light-emitting device, it is preferable to use an electrode having a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or higher. The visible light reflectance of the semitransparent and semireflective electrodes shall be 10% or higher and 95% or lower, preferably 30% or higher and 80% or lower. The visible light reflectance of the reflective electrodes shall be 40% or higher and 100% or lower, preferably 70% or higher and 100% or lower. In addition, the resistivity of these electrodes shall be 1×10⁻⁶ -2 It is desirable that it be Ωcm or less.

[0323] A light-emitting device comprises at least a light-emitting layer. Additionally, the light-emitting device may further comprise a layer other than the light-emitting layer, comprising a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, an electron blocking material, a material with high electron injection properties, or a bipolar material (a material with high electron transport properties and hole transport properties). For example, in addition to the light-emitting layer, the light-emitting device may comprise one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0324] Either low-molecular-weight compounds or high-molecular-weight compounds may be used in the light-emitting device, and inorganic compounds may be included. Each layer constituting the light-emitting device can be formed by a deposition method (including vacuum deposition), a transfer method, a printing method, an inkjet method, a coating method, etc.

[0325] The light-emitting layer comprises one or more types of light-emitting materials. As the light-emitting material, a material that emits a light-emitting color such as blue, violet, blue-violet, green, yellow-green, yellow, orange, or red is appropriately used. In addition, a material that emits near-infrared light may also be used as the light-emitting material.

[0326] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0327] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0328] Examples of phosphorescent materials include organometallic complexes having a 4H-triazole backbone, a 1H-triazole backbone, an imidazole backbone, a pyrimidine backbone, a pyrazine backbone, or a pyridine backbone (particularly iridium complexes), organometallic complexes containing a phenylpyridine derivative having an electron-withdrawing group as a ligand (particularly iridium complexes), platinum complexes, and rare earth metal complexes.

[0329] The emitting layer may include one or more types of organic compounds (host material, assist material, etc.) in addition to the emitting material (guest material). As one or more types of organic compounds, one or both of a material with high hole transportability (hole transport material) and a material with high electron transportability (electron transport material) may be used. As the hole transport material, a material with high hole transportability that can be used in the hole transport layer described later may be used. As the electron transport material, a material with high electron transportability that can be used in the electron transport layer described later may be used. In addition, a bipolar material or a TADF material may be used as one or more types of organic compounds.

[0330] The emissive layer preferably comprises, for example, a combination of a phosphorescent material and a hole-transporting material and an electron-transporting material that facilitate the formation of excited complexes. This allows for efficient luminescence using Exciplex-Triplet Energy Transfer (ExTET), which is the energy transfer from the excited complex to the emitting material (phosphorescent material). By selecting a combination that forms an excited complex exhibiting luminescence at a wavelength that overlaps with the wavelength of the absorption band on the lowest energy side of the emitting material, energy transfer is facilitated, enabling efficient luminescence. With this configuration, high efficiency, low-voltage operation, and a long lifespan of the emitting device can be realized simultaneously.

[0331] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and includes a material with high hole injection properties. Examples of materials with high hole injection properties include aromatic amine compounds, and composite materials including a hole transport material and an acceptor material (electron accepting material).

[0332] As a hole transport material, a material with high hole transportability that can be used in a hole transport layer, as described below, may be used.

[0333] As acceptor materials, for example, oxides of metals belonging to groups 4 to 8 of the periodic table may be used. Specifically, examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is particularly preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. In addition, organic acceptor materials containing fluorine may be used. Furthermore, organic acceptor materials such as quinodimethane derivatives, chloranyl derivatives, and hexa-azatriphenylene derivatives may be used.

[0334] For example, as a material with high hole injection properties, a material including a hole transport material and an oxide of a metal belonging to groups 4 to 8 of the periodic table described above (typically molybdenum oxide) may be used.

[0335] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the emissive layer. The hole transport layer includes a hole transportable material. The hole transportable material has a hole mobility of 1×10⁻⁶ -6 cm 2 It is desirable that / Vs be greater than or equal to . In addition, materials other than these may be used if they have hole transport properties higher than electron transport properties. As hole transport materials, materials with high hole transport properties such as π-electron excess heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine backbone) are preferred.

[0336] The electron blocking layer is provided in contact with the light-emitting layer. The electron blocking layer includes a material capable of blocking electrons and having hole transport properties. Among the hole transport materials, a material having electron blocking properties may be used in the electron blocking layer.

[0337] An electron blocking layer can also be called a hole transport layer because it has hole transport properties. Additionally, a layer among the hole transport layers that has electron blocking properties can also be called an electron blocking layer.

[0338] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer includes an electron transport material. The electron transport material has an electron mobility of 1×10⁻⁶ -6 cm 2It is desirable that / Vs be greater than or equal to . In addition, materials other than these may be used if they have higher electron transport than hole transport. As electron transport materials, materials with high electron transport such as metal complexes having a quinoline backbone, metal complexes having a benzoquinoline backbone, metal complexes having an oxazole backbone, metal complexes having a thiazole backbone, etc., as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives containing quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds may be used.

[0339] A hole blocking layer is provided in contact with a light-emitting layer. The hole blocking layer comprises a material capable of blocking holes and possessing electron transport properties. Among the electron transport materials, a material having hole blocking properties may be used in the hole blocking layer.

[0340] A hole blocking layer can also be called an electron transport layer because it possesses electron transport properties. Additionally, a layer among electron transport layers that possesses hole blocking properties can also be called a hole blocking layer.

[0341] The electron injection layer is a layer that injects electrons from the cathode into the electron transport layer and includes a material with high electron injection properties. Alkali metals, alkaline earth metals, or compounds thereof may be used as materials with high electron injection properties. As materials with high electron injection properties, composite materials including electron transport materials and donor materials (electron-donating materials) may also be used.

[0342] In addition, it is desirable that the difference between the LUMO (Lowest Unoccupied Molecular Orbital) level of a material with high electron injection capability and the work function of the material used as the cathode be small (specifically, 0.5 eV or less).

[0343] The electron injection layer contains, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), and calcium fluoride (CaF x , X is an arbitrary number), 8-(quinolinolenate)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolate lithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolate lithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolate lithium (abbreviation: LiPPP), lithium oxide (LiO x Alkali metals such as ), alkaline earth metals such as cesium carbonate, or compounds thereof may be used. In addition, the electron injection layer may have a stacked structure of two or more layers. In the stacked structure, for example, lithium fluoride may be used in the first layer and ytterbium may be used in the second layer.

[0344] The electron injection layer may include an electron transport material. For example, a compound having an electron-deficient heteroaromatic ring with non-covalent electron pairs may be used as an electron transport material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring may be used.

[0345] In addition, it is desirable that the LUMO level of an organic compound having non-covalent electron pairs be between -3.6 eV and -2.3 eV. Also, generally, the HOMO (Highest Occupied Molecular Orbital) level and LUMO level of an organic compound can be estimated using methods such as cyclic voltammetry (CV), photoelectron spectroscopy, light absorption spectroscopy, and backphotoelectron spectroscopy.

[0346] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated: BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated: mPPhen2P), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated: HATNA), 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated: TmPPPyTz), etc., can be used in organic compounds having non-covalent electron pairs. In addition, NBPhen has a higher glass transition temperature (Tg) than BPhen, so it has excellent heat resistance.

[0347] It is preferable that the charge generation layer includes a P-type layer. It is preferable that the P-type layer includes an acceptor material, and for example, it is preferable that it includes a hole transport material and an acceptor material that can be used in the hole injection layer described above.

[0348] In addition, it is desirable for the charge generation layer to include a layer containing a material with high electron injection properties. The layer may also be referred to as an electron injection buffer layer or an N-type layer. It is desirable for the electron injection buffer layer to be provided between the P-type layer and the electron transport layer. By providing the electron injection buffer layer, the injection barrier between the P-type layer and the electron transport layer can be alleviated, thereby allowing electrons generated in the P-type layer to be easily injected into the electron transport layer.

[0349] The electron injection buffer layer preferably comprises an alkali metal or an alkaline earth metal, and may, for example, comprise a compound of an alkali metal or a compound of an alkaline earth metal. Specifically, the electron injection buffer layer preferably comprises an inorganic compound comprising an alkali metal and oxygen or an inorganic compound comprising an alkaline earth metal and oxygen, and it is more preferable to comprise an inorganic compound comprising lithium and oxygen (such as lithium oxide (Li2O)). In addition to these, materials suitable for use in the electron injection layer described above may be suitably used for the electron injection buffer layer.

[0350] It is preferable that the charge generation layer includes a layer containing a material with high electron transportability. The said layer may also be called an electron relay layer. It is preferable that the electron relay layer be provided between the P-type layer and the electron injection buffer layer. If the charge generation layer does not include the electron injection buffer layer, it is preferable that the electron relay layer be provided between the P-type layer and the electron transport layer. The electron relay layer has the function of preventing interaction between the P-type layer and the electron injection buffer layer (or electron transport layer) and smoothly transporting electrons.

[0351] As an electronic relay layer, it is preferable to use a phthalocyanine-based material such as copper (II) phthalocyanine (abbreviated as CuPc) or a metal complex containing a metal-oxygen bond and an aromatic ligand.

[0352] In addition, the aforementioned P-type layer, electron injection buffer layer, and electron relay layer may not be clearly distinguishable depending on their cross-sectional shape or characteristics.

[0353] When stacking light-emitting units, a charge-generating layer is provided between the two light-emitting units, thereby suppressing the rise in driving voltage.

[0354] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0355] (Embodiment 5)

[0356] In this embodiment, an electronic device of one form of the present invention is described using FIGS. 18 to 21.

[0357] The electronic device of the present embodiment includes a display panel (display device) of one form of the present invention in the display section. The display panel of one form of the present invention can easily increase precision and resolution and realize high display quality. Therefore, it can be used in the display section of various electronic devices.

[0358] Electronic devices include, for example, televisions, desktop or laptop personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, and other electronic devices with relatively large screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, and sound playback devices.

[0359] In particular, since a display panel of one form of the present invention can increase the precision, it can be suitably used in electronic devices having a relatively small display area. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, glasses-type AR devices, and MR (Mixed Reality) devices, as well as wearable devices that can be mounted on the head.

[0360] In one embodiment of the present invention, a display panel preferably has a very high resolution, such as HD (pixels 1280×720), FHD (pixels 1920×1080), WQHD (pixels 2560×1440), WQXGA (pixels 2560×1600), 4K (pixels 3840×2160), 8K (pixels 7680×4320), etc. In particular, it is preferable to have a resolution of 4K, 8K, or higher than these. In addition, the pixel density (resolution) of a display panel of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and more preferably 7000 ppi or higher. By using a display panel having one or both of such high resolution and high resolution, the sense of realism and depth can be further enhanced. In addition, the aspect ratio (aspect ratio) of a display panel of one embodiment of the present invention is not particularly limited. For example, the display panel can support various aspect ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0361] The electronic device of the present embodiment may include a sensor (having the function of detecting, detecting, or measuring force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, or infrared radiation).

[0362] The electronic device of the present embodiment may have various functions. For example, it may have a function of displaying various information (still images, video, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of executing various software (programs), a wireless communication function, and a function of reading programs or data stored on a recording medium.

[0363] Using FIG. 18 (A) to (D), an example of a wearable device that can be mounted on the head is described. These wearable devices have one or both of the functions of displaying AR content and displaying VR content. In addition, these wearable devices may have the function of displaying SR (Substitutional Reality) or MR content in addition to AR and VR. By having an electronic device with the function of displaying at least one of AR, VR, SR, and MR content, the user's sense of immersion can be enhanced.

[0364] The electronic device (700A) shown in (A) of FIG. 18 and the electronic device (700B) shown in (B) of FIG. 18 each include a pair of display panels (751), a pair of housings (721), a communication unit (not shown), a pair of mounting units (723), a control unit (not shown), an imaging unit (not shown), a pair of optical members (753), a frame (757), and a pair of nose pads (758).

[0365] A display panel of one form of the present invention can be used for the display panel (751). Thus, an electronic device capable of displaying with very high precision can be obtained.

[0366] The electronic device (700A) and the electronic device (700B) can each project an image displayed on the display panel (751) onto the display area (756) of the optical member (753). Since the optical member (753) has light transmittance, the user can view the image displayed on the display area by overlaying it on the transmitted image visible to the eye through the optical member (753). Therefore, the electronic device (700A) and the electronic device (700B) are each electronic devices capable of AR display.

[0367] The electronic device (700A) and the electronic device (700B) may be provided with a camera capable of capturing the forward direction as an imaging unit. Additionally, the electronic device (700A) and the electronic device (700B) may each include an accelerometer such as a gyroscope sensor to detect the direction of the user's head and display an image corresponding to that direction in the display area (756).

[0368] The communication unit includes a wireless communication device and can supply video signals, etc. via the wireless communication device. In addition, it may include a connector capable of connecting a cable to which video signals and power potentials are supplied, either instead of or in addition to the wireless communication device.

[0369] In addition, since the electronic device (700A) and the electronic device (700B) are provided with batteries, they can be charged wirelessly or wired, or both.

[0370] A touch sensor module may be provided in the housing (721). The touch sensor module has the function of detecting that the outer surface of the housing (721) is touched. Various processing can be performed by detecting user tap operations or slide operations through the touch sensor module. For example, processing such as pausing or resuming a video can be performed by tap operations, and processing such as fast-forwarding or fast-rewinding can be performed by slide operations. In addition, the range of operations can be expanded by providing a touch sensor module in each of the two housings (721).

[0371] Various touch sensors can be used in touch sensor modules. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, and optical methods can be employed. In particular, it is desirable to use capacitive or optical sensors in touch sensor modules.

[0372] When using an optical touch sensor, a photoelectric conversion device (also called a photoelectric conversion element) may be used as a light receiving device (also called a light receiving element). In the active layer of the photoelectric conversion device, one or both of an inorganic semiconductor and an organic semiconductor may be used.

[0373] The electronic device (800A) shown in Fig. 18 (C) and the electronic device (800B) shown in Fig. 18 (D) each include a pair of display units (820), a housing (821), a communication unit (822), a pair of mounting units (823), a control unit (824), a pair of imaging units (825), and a pair of lenses (832).

[0374] A display panel of one form of the present invention may be used in the display unit (820). Thus, an electronic device capable of displaying very high precision can be obtained. As a result, the user can feel a high sense of immersion.

[0375] The display unit (820) is provided at a position where it can be visually observed through the lens (832) inside the housing (821). Additionally, by displaying different images on a pair of display units (820), a three-dimensional display using parallax can be made.

[0376] The electronic device (800A) and the electronic device (800B) can each be described as an electronic device for VR. A user wearing the electronic device (800A) or the electronic device (800B) can view an image displayed on the display unit (820) through the lens (832).

[0377] It is preferable that the electronic device (800A) and the electronic device (800B) each have a mechanism capable of adjusting the left and right positions of the lens (832) and the display unit (820) so that they are optimally positioned according to the position of the user's eyes. It is also preferable that they have a mechanism for adjusting the focus by changing the distance between the lens (832) and the display unit (820).

[0378] The user can mount an electronic device (800A) or an electronic device (800B) on their head via the mounting portion (823). Additionally, while examples such as (C) in FIG. 18 show a shape similar to eyeglass temples (also called temples), it is not limited thereto. The mounting portion (823) may be a helmet type or a band type, for example, so as to be mountable by the user.

[0379] The imaging unit (825) has the function of acquiring external information. Data acquired by the imaging unit (825) can be output to the display unit (820). An image sensor may be used in the imaging unit (825). Additionally, multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide-angle.

[0380] In addition, although an example is shown here in which an imaging unit (825) is provided, it is preferable to provide a distance sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object. That is, the imaging unit (825) is a form of the detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, and gesture operation with higher precision becomes possible.

[0381] The electronic device (800A) may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration may be adopted in which the vibration mechanism is present in any one or more of the display unit (820), the housing (821), and the mounting unit (823). Accordingly, audio devices such as headphones, earphones, or speakers are not required separately, so video and audio can be enjoyed simply by mounting the electronic device (800A).

[0382] The electronic device (800A) and the electronic device (800B) may each include an input terminal. A cable supplying a video signal from a video output device, etc., and power for charging a battery provided within the electronic device may be connected to the input terminal.

[0383] An electronic device of one embodiment of the present invention may have a function of wirelessly communicating with an earphone (750). The earphone (750) has a communication unit (not shown) and has a wireless communication function. The earphone (750) can receive information (e.g., voice data) from the electronic device through the wireless communication function. For example, the electronic device (700A) shown in FIG. 18 (A) has a function of transmitting information to the earphone (750) through the wireless communication function. Also, for example, the electronic device (800A) shown in FIG. 18 (C) has a function of transmitting information to the earphone (750) through the wireless communication function.

[0384] Additionally, the electronic device may have an earphone section. The electronic device (700B) shown in (B) of FIG. 18 has an earphone section (727). For example, the earphone section (727) may be wired to a control unit. A portion of the wiring connecting the earphone section (727) and the control unit may be placed inside a housing (721) or a mounting section (723).

[0385] Likewise, the electronic device (800B) shown in (D) of FIG. 18 has an earphone section (827). For example, the earphone section (827) may be wired to a control section (824). A portion of the wiring connecting the earphone section (827) and the control section (824) may be placed inside a housing (821) or a mounting section (823). Additionally, the earphone section (827) and the mounting section (823) may include magnets. This is desirable because the earphone section (827) can be fixed to the mounting section (823) by magnetic force, making storage easier.

[0386] In addition, the electronic device may include an audio output terminal to which earphones or headphones can be connected. Furthermore, the electronic device may include either or both of an audio input terminal and an audio input device. As the audio input device, a sound collecting device such as a microphone may be used, for example. By having an audio input device, the electronic device may be endowed with the function of a so-called headset.

[0387] As described above, as one form of the electronic device of the present invention, both glasses type (electronic device (700A) and electronic device (700B), etc.) and goggle type (electronic device (800A) and electronic device (800B), etc.) are suitable.

[0388] The electronic device (6500) shown in (A) of Fig. 19 is a portable information terminal that can be used as a smartphone.

[0389] The electronic device (6500) includes a housing (6501), a display unit (6502), a power button (6503), a button (6504), a speaker (6505), a microphone (6506), a camera (6507), and a light source (6508), etc. The display unit (6502) has a touch panel function.

[0390] A display panel of one form of the present invention can be used in the display unit (6502).

[0391] (B) of FIG. 19 is a schematic cross-sectional view including the end of the housing (6501) on the side of the microphone (6506).

[0392] A protective member (6510) having light transmittance is provided on the display side of the housing (6501), and a display panel (6511), an optical member (6512), a touch sensor panel (6513), a printed circuit board (6517), a battery (6518), etc. are arranged within the space enclosed by the housing (6501) and the protective member (6510).

[0393] A display panel (6511), an optical member (6512), and a touch sensor panel (6513) are fixed to the protective member (6510) by an adhesive layer (not shown).

[0394] A portion of the display panel (6511) is folded in an area outside the display portion (6502), and an FPC (6515) is connected to this folded portion. An IC (6516) is mounted on the FPC (6515). The FPC (6515) is connected to a terminal provided on the printed circuit board (6517).

[0395] A display device of one form of the present invention can be used in the display panel (6511). Therefore, a very lightweight electronic device can be realized. Also, since the display panel (6511) is very thin, a large capacity battery (6518) can be installed while keeping the thickness of the electronic device low. Additionally, by folding a part of the display panel (6511) and placing a connection part with the FPC (6515) on the back side of the pixel part, a slim bezel electronic device can be realized.

[0396] An example of a television device is shown in (C) of FIG. 19. In the television device (7100), a display unit (7000) is included in the housing (7101). Here, a configuration is shown in which the housing (7101) is supported by a stand (7103).

[0397] The operation of the television device (7100) shown in (C) of FIG. 19 can be performed by an operation switch having a housing (7101) and a separate remote controller (7111). Alternatively, a touch sensor may be included in the display unit (7000), or the television device (7100) may be operated by touching the display unit (7000) with a finger or the like. The remote controller (7111) may have a display unit that displays information output from the remote controller (7111). Channels and volume can be operated by an operation key or touch panel having the remote controller (7111), and images displayed on the display unit (7000) can be operated.

[0398] Additionally, the television device (7100) includes a receiver and a modem, etc. General television broadcasts can be received via the receiver. Furthermore, by connecting to a communication network via a wired or wireless connection through the modem, information communication can be performed in one direction (from the sender to the receiver) or in two directions (between the sender and the receiver, or between receivers, etc.).

[0399] An example of a notebook personal computer is shown in (D) of FIG. 19. The notebook personal computer (7200) includes a housing (7211), a keyboard (7212), a pointing device (7213), an external connection port (7214), etc. A display unit (7000) is included in the housing (7211).

[0400] An example of digital signage is shown in (E) and (F) of Fig. 19.

[0401] The digital signage (7300) shown in (E) of FIG. 19 includes a housing (7301), a display unit (7000), and a speaker (7303), etc. It may also include an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, etc.

[0402] (F) of FIG. 19 shows a digital signage (7400) mounted on a cylindrical column (7401). The digital signage (7400) has a display (7000) provided along the curved surface of the column (7401).

[0403] The wider the display area (7000), the more information can be provided at once. Also, the wider the display area (7000), the easier it is to catch people's eyes, so, for example, the promotional effect of an advertisement can be increased.

[0404] By using a touch panel on the display unit (7000), it is desirable not only to display images or videos on the display unit (7000) but also to allow the user to operate it intuitively. In addition, when used for the purpose of providing information such as route information or traffic information, usability can be enhanced through intuitive operation.

[0405] In addition, as shown in (E) and (F) of FIG. 19, it is preferable that the digital signage (7300) or digital signage (7400) be connected via wireless communication with an information terminal (7311) or an information terminal (7411), such as a smartphone owned by the user. For example, information about an advertisement displayed on the display unit (7000) can be displayed on the screen of the information terminal (7311) or the information terminal (7411). In addition, the display of the display unit (7000) can be switched by operating the information terminal (7311) or the information terminal (7411).

[0406] Additionally, a game may be executed on the digital signage (7300) or digital signage (7400) using the screen of the information terminal (7311) or the information terminal (7411) as a means of operation (controller). By doing so, an unspecified number of users can simultaneously participate in and enjoy the game.

[0407] In (C) to (F) of FIG. 19, a display panel of one form of the present invention can be used in the display unit (7000).

[0408] The electronic device shown in (A) to (G) of FIG. 20 includes a housing (9000), a display unit (9001), a speaker (9003), an operation key (9005) (including a power switch or an operation switch), a connection terminal (9006), a sensor (9007) (having the function of detecting, detecting, or measuring force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, longitude, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, smell, or infrared radiation), a microphone (9008), etc.

[0409] The electronic device shown in (A) to (G) of FIG. 20 has various functions. For example, it may have a function of displaying various information (still images, video, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of controlling processing by various software (programs), a wireless communication function, and a function of reading and processing programs or data stored on a recording medium. Furthermore, the functions of the electronic device are not limited to these and may have various functions. The electronic device may have multiple display units. Additionally, the electronic device may be provided with a camera, etc., and may have a function of capturing still images or video and storing them on a recording medium (an external recording medium or a recording medium built into the camera), and a function of displaying the captured images on a display unit.

[0410] Detailed information regarding the electronic device shown in (A) to (G) of FIGS. 20 will be explained below.

[0411] FIG. 20 (A) is a perspective view showing a portable information terminal (9101). The portable information terminal (9101) can be used, for example, as a smartphone. Additionally, the portable information terminal (9101) may be provided with a speaker (9003), a connection terminal (9006), a sensor (9007), etc. Additionally, the portable information terminal (9101) may display text and image information on its multiple surfaces. FIG. 20 (A) shows an example in which three icons (9050) are displayed. Additionally, information (9051) represented by a dashed rectangle may be displayed on another surface of the display unit (9001). Examples of information (9051) include notifications of incoming calls such as email, SNS, and phone calls, the subject of the email or SNS, the sender's name, date and time, time, remaining battery level, signal strength, etc. Alternatively, an icon (9050), etc., may be displayed at the location where the information (9051) is displayed.

[0412] FIG. 20 (B) is a perspective view showing a portable information terminal (9102). The portable information terminal (9102) has the function of displaying information on three or more sides of the display unit (9001). Here, an example is shown in which information (9052), information (9053), and information (9054) are displayed on different sides. For example, while the portable information terminal (9102) is stored in the chest pocket of clothing, the user may check the information (9053) displayed at a position visible from above the portable information terminal (9102). The user can check the display without taking the portable information terminal (9102) out of the pocket and, for example, decide whether to answer a call.

[0413] Figure 20 (C) is a perspective view showing a tablet terminal (9103). The tablet terminal (9103) can run various applications such as mobile phone, email, text viewing and writing, music playback, internet communication, and computer games. The tablet terminal (9103) includes a display unit (9001), a camera (9002), a microphone (9008), and a speaker (9003) on the front of the housing (9000), an operation key (9005) as an operation button on the left side of the housing (9000), and a connection terminal (9006) on the bottom.

[0414] FIG. 20 (D) is a perspective view showing a wristwatch-type portable information terminal (9200). The portable information terminal (9200) can be used, for example, as a smartwatch (registered trademark). Additionally, the display unit (9001) is provided with a curved display surface and can display along the curved display surface. Furthermore, the portable information terminal (9200) can make hands-free calls by communicating with, for example, a headset capable of wireless communication. Additionally, the portable information terminal (9200) can exchange data with other information terminals or charge via a connection terminal (9006). Additionally, the charging operation may be performed by wireless power supply.

[0415] FIGS. 20 (E) to (G) are perspective views showing a foldable portable information terminal (9201). FIGS. 20 (E) is a perspective view showing a portable information terminal (9201) in an unfolded state, FIGS. 20 (G) is a perspective view showing a portable information terminal (9201) in a folded state, and FIGS. 20 (F) is a perspective view showing a portable information terminal (9201) in a state in the middle of changing from one side to the other among the states shown in FIGS. 20 (E) and (G). The portable information terminal (9201) has excellent portability when folded, and when unfolded, it has excellent visibility of the display because it includes a wide display area without seams. The display part (9001) of the portable information terminal (9201) is supported by three housings (9000) connected by a hinge (9055). For example, the display part (9001) can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0416] Figures 21 (A) and (B) are drawings showing the appearance of a head-mounted display (8300). The head-mounted display (8300) includes a housing (8301), a display unit (8302), a band-shaped fastener (8304), and a pair of lenses (8305).

[0417] The user can view the display of the display unit (8302) through the lens (8305). Additionally, if the display unit (8302) is positioned in a curved shape, it is desirable for the user to feel a high sense of realism. Furthermore, by viewing other images displayed in different areas of the display unit (8302) through the lens (8305), it is possible to perform 3D displays using parallax. Additionally, the configuration is not limited to providing a single display unit (8302); it is also acceptable to provide two display units (8302) and place one display unit for each eye of the user.

[0418] A display device of one form of the present invention may be used in the display unit (8302). A display device of one form of the present invention may achieve very high precision. Therefore, even when viewing a display magnified by a lens (8305), pixels are difficult for the user to perceive. In other words, by using the display unit (8302), a highly realistic image can be provided to the user.

[0419] In addition, it is desirable for the head-mounted display (8300) to have head tracking and eye tracking functions. This allows the displayed image to move according to the user's movements and the direction of the user's gaze. This enables the user to be provided with highly immersive images. For example, as shown in (C) of FIG. 21, a passenger riding in the back seat of a car can wear the head-mounted display (8300). In this case, because the image moves along with the shaking of the car body and the gaze is not fixed, motion sickness can be reduced compared to, for example, when viewing images on a smartphone or tablet device.

[0420] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification. Explanation of the symbols

[0421] HT: Processing Room, LL: Incoming Room, RBT: Return Robot, SP: Film Deposition Room, Sx: Gap, Sy: Gap, TF: Return Room, UL: Outgoing Room, EL1: Film Deposition Room, EL2: Film Deposition Room, EL3: Film Deposition Room, EL4: Film Deposition Room, EL5: Film Deposition Room, EL6: Film Deposition Room, EL7: Film Deposition Room, EL8: Film Deposition Room, 100: Display Device, 101: Substrate, 110: Light Emitting Element, 110B: Pixel, 110G: Pixel, 110R: Pixel, 111: Pixel Electrode, 111B: Pixel Electrode, 111G: Pixel Electrode, 111R: Pixel Electrode, 112: EL Layer, 112a: EL Layer, 113: Top Electrode, 120: Barrier, 120f: Conductive Film, 121: Tabernacle material, 122: Tabernacle material, 125: Rotating axis, 131: Insulating layer, 132: Insulating layer, 133: Insulating layer, 134: Insulating layer, 135: Protective layer, 141: Resist mask, 150: Transistor, 151: Semiconductor layer, 152: Insulating layer, 153: Conductive layer, 154: Conductive layer, 161: Color filter, 161B: Color filter, 161G: Color filter, 161R: Color filter

Claims

Claim 1 A display device comprising: a pixel electrode; an EL layer; an upper electrode; a first insulating layer; a partition; a color filter; and a transistor, wherein the transistor is located below the pixel electrode and connected to the pixel electrode, the first insulating layer has an end above the pixel electrode, the partition is located above the first insulating layer, the EL layer comprises a luminescent compound and is in contact with the upper surface of the pixel electrode and the upper surface of the first insulating layer, the upper electrode covers the upper surface and end of the EL layer and is in contact with the upper surface of the first insulating layer and the side of the partition, the color filter is located above the upper electrode and the partition and has an end that overlaps with the partition, the partition has an inverse tapered shape when viewed in cross-section and is conductive, and there is a gap between the end of the first insulating layer and the partition. Claim 2 As a display device, a first pixel electrode; a second pixel electrode; a first EL layer; a second EL layer; a first upper electrode; a second upper electrode; a first insulating layer; a partition; a first color filter; a second color filter; and includes a transistor, wherein the transistor is located below the first pixel electrode and is connected to the first pixel electrode, the first insulating layer has ends above the first pixel electrode and above the second pixel electrode, the partition is located above the first insulating layer, the first EL layer includes a first luminescent compound and is in contact with the upper surface of the first pixel electrode and the upper surface of the first insulating layer, the second EL layer includes a second luminescent compound and is in contact with the upper surface of the second pixel electrode and the upper surface of the first insulating layer, the first upper electrode covers the upper surface and ends of the first EL layer and is in contact with the upper surface of the first insulating layer and a part of the side of the partition, the second upper electrode covers the upper surface and ends of the second EL layer and is in contact with the upper surface of the first insulating layer and another part of the side of the partition, and the first color filter is of the first upper electrode and the partition A display device having a top positioned above and an end portion overlapping with the partition wall, wherein the second color filter is positioned above the second upper electrode and the partition wall and an end portion overlapping with the partition wall, wherein the partition wall has an inverse tapered shape when viewed in cross-section and is conductive, and there is a gap between the end portion of the first insulating layer on the first pixel electrode and the partition wall. Claim 3 A display device according to claim 1, wherein the EL layer has the function of emitting white light, and the color filter comprises a metal, a pigment, or a dye. Claim 4 A display device according to claim 1, wherein the EL layer has the function of emitting blue light or light with a wavelength shorter than that of the blue light, and a wavelength conversion layer is provided instead of the color filter, and the wavelength conversion layer comprises a quantum dot or a fluorescent material. Claim 5 A display device according to claim 1, wherein the angle formed by the contact surface of the bulkhead with the first insulating layer and the side surface of the bulkhead is 95° or more and 150° or less. Claim 6 In claim 1, the above partition is a display device comprising indium. Claim 7 In claim 1, the transistor comprises a metal oxide in a semiconductor layer in which a channel is formed, a display device. Claim 8 A display device according to claim 2, wherein the angle formed by the contact surface of the bulkhead with the first insulating layer and the side surface of the bulkhead is 95° or more and 150° or less. Claim 9 In claim 2, the above bulkhead is a display device comprising indium. Claim 10 In claim 2, the transistor comprises a metal oxide in a semiconductor layer in which a channel is formed, a display device.

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