Laminated solar cell and preparation method therefor, and electrical device

Abstract

A stacked solar cell, a method for manufacturing the same, and an electric device belong to the field of solar cell technology. The stacked solar cell comprises a first sub-cell, a tunneling structure, and a second sub-cell arranged sequentially along a first direction, wherein the first direction is the incident direction of sunlight; the first sub-cell comprises a first carrier transport layer, a first light absorption layer, and a second carrier transport layer arranged sequentially along the first direction; the second sub-cell comprises a third carrier transport layer, a second light absorption layer, and a fourth carrier transport layer arranged sequentially along the first direction; and the tunneling structure comprises a main material layer and an auxiliary material layer, wherein the main material layer comprises a metal-doped metal oxide, and the auxiliary material layer comprises an N-type semiconductor material or a P-type semiconductor material, wherein the auxiliary material layer is located between the main material layer and the third carrier transport layer, and the main material layer is located between the second carrier transport layer and the auxiliary material layer, which is advantageous for improving the efficiency and stability of the stacked solar cell.

Description

Technology Field

[0001] This application claims priority to patent application 2023104999589, filed on May 6, 2023, titled “Stacked solar cell and method for manufacturing the same and electric device,” the entire contents of which are incorporated herein by reference.

[0002] This application relates to the field of solar cell technology, and in particular to a stacked solar cell, a method for manufacturing the same, and an electrical device. Background Technology

[0003] In recent years, as global energy shortages and environmental pollution have become increasingly severe, solar cells are receiving growing attention as an ideal renewable energy source. Solar cells, also referred to as photovoltaic cells, are devices that directly convert light energy into electrical energy through the photoelectric or photochemical effects. Stacked solar cells are a type of solar cell that possesses higher photoelectric conversion efficiency and offers excellent application prospects. The problem to be solved

[0004] The installation of each film layer in a stacked solar cell is critical to performance, including stability and efficiency. Therefore, improving the efficiency of stacked solar cells is a technical problem that needs to be urgently addressed. means of solving the problem

[0005] This application is carried out in consideration of the above-mentioned problem and aims to improve the performance of a stacked solar cell by providing a stacked solar cell, a method for manufacturing the same, and an electric device.

[0006] According to a first embodiment, a stacked solar cell is provided, comprising a first subcell, a tunneling structure, and a second subcell arranged sequentially along a first direction, wherein the first direction is the direction of incidence of sunlight; wherein the first subcell comprises a first carrier transport layer, a first light absorption layer, and a second carrier transport layer arranged sequentially along the first direction; and the second subcell comprises a third carrier transport layer, a second light absorption layer, and a fourth carrier transport layer arranged sequentially along the first direction; and the tunneling structure comprises a main material layer and an auxiliary material layer, wherein the main material layer comprises a metal-doped metal oxide, and the auxiliary material layer comprises an N-type semiconductor material or a P-type semiconductor material, wherein the auxiliary material layer is located between the main material layer and the third carrier transport layer, and the main material layer is located between the second carrier transport layer and the auxiliary material layer.

[0007] An embodiment of the present application provides a stacked solar cell comprising a first subcell, a tunneling structure, and a second subcell arranged sequentially along a first direction. The tunneling structure is located between the first subcell and the second subcell and can electrically connect the first subcell and the second subcell to form a stacked cell. The first subcell comprises a first carrier transport layer, a first light absorption layer, and a second carrier transport layer arranged sequentially along the first direction; and the second subcell comprises a third carrier transport layer, a second light absorption layer, and a fourth carrier transport layer arranged sequentially along the first direction. The first light absorption layer and the second light absorption layer can generate electron-hole pairs under solar irradiation, and the first carrier transport layer, the second carrier transport layer, the third carrier transport layer, and the fourth carrier transport layer can transport electrons or holes. The tunneling structure comprises a main material layer and an auxiliary material layer, the main material layer comprises a metal-doped metal oxide, and the auxiliary material layer comprises an N-type semiconductor material or a P-type semiconductor material. By installing a main material layer, the resistance between the tunneling structure and the first or second sub-cell can be reduced, which is advantageous for improving the filling factor of the stacked solar cell; and by installing an auxiliary material layer, the carrier compounding between the tunneling structure and the first or second sub-cell is advantageous. The auxiliary material layer is located between the main material layer and the third carrier transport layer, thereby being advantageous for reducing carrier loss between the second carrier transport layer and the third carrier transport layer; and the main material layer is located between the second carrier transport layer and the auxiliary material layer, thereby being advantageous for reducing the resistance between the second carrier transport layer and the third carrier transport layer and for improving the filling factor of the stacked solar cell. Accordingly, the technical solution of the embodiment of the present application is advantageous for improving the efficiency of the stacked solar cell.

[0008] In one possible embodiment, the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the third carrier transport layer is a hole transport layer, the fourth carrier transport layer is an electron transport layer, and the auxiliary material layer comprises a P-type semiconductor material.

[0009] In the technical solution described above, the material of the auxiliary material layer is a P-type semiconductor material, and the third carrier transport layer is a hole transport layer, which is advantageous for reducing carrier loss between the second carrier transport layer and the third carrier transport layer and for improving the efficiency of the stacked solar cell.

[0010] In one possible embodiment, the P-type semiconductor material comprises at least one of compound (I) and compound (II), and

[0011]

[0012] Here, A is , , , Includes at least one of the following;

[0013] R is -(CH2) n Includes -, and n is a natural number from 1 to 6;

[0014] R1, R2, R3, and R4 each independently comprise at least one of -H, -CH3, -C2H5, -OCH3, -OC2H5, -X, -NH2, and A, and X comprises a halogen element. By selecting the above-described materials, the stacked solar cell has higher efficiency.

[0015] In one possible embodiment, the P-type semiconductor material comprises at least one of [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid, 2-(4-(diphenylamino)phenyl)acetic acid, and [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid. By selecting the above-described material, the stacked solar cell has a higher efficiency.

[0016] In one possible embodiment, the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer, the third carrier transport layer is an electron transport layer, the fourth carrier transport layer is a hole transport layer, and the auxiliary material layer comprises an N-type semiconductor material.

[0017] In the technical solution described above, the material of the auxiliary material layer is an N-type semiconductor material, and the third carrier transport layer is an electron transport layer, which is advantageous for reducing carrier loss between the second carrier transport layer and the third carrier transport layer and for improving the efficiency of the stacked solar cell.

[0018] In one possible embodiment, the N-type semiconductor material comprises tin dioxide. By selecting tin dioxide as the material for the auxiliary material layer, the stacked solar cell has higher efficiency.

[0019] In one possible embodiment, the thickness of the main material layer is 0.5 nm to 2 nm.

[0020] In the technical solution described above, when the thickness of the main material layer is 0.5 nm or more, it is advantageous for reducing the difficulty of manufacturing the main material layer and is convenient for manufacturing the main material layer; when the thickness of the main material layer is 2 nm or less, it is advantageous for reducing carrier loss and is convenient for carrier transmission, which is advantageous for improving the efficiency of the stacked solar cell.

[0021] In one possible embodiment, the thickness of the main material layer is 0.5 nm to 1.5 nm. The thickness of the main material layer is 0.5 nm to 1.5 nm, which is convenient for manufacturing the main material layer and, based thereon, further improves the efficiency of the stacked solar cell.

[0022] In one possible embodiment, the thickness of the auxiliary material layer is less than 1 nm.

[0023] In the technical solution described above, installing an auxiliary material layer with a smaller thickness is advantageous for improving the efficiency of the stacked solar cell.

[0024] Optionally, the thickness of the auxiliary material layer is 0.5 nm to 0.8 nm.

[0025] In one possible embodiment, in the main material layer, the metal oxide comprises at least one of tin oxide, zinc oxide, and copper oxide, and the doped metal comprises at least one of aluminum, indium, and magnesium.

[0026] In the technical solution described above, tin oxide, zinc oxide, copper oxide, etc., have superior conductivity and are advantageous for further improving the conductivity of the main material layer by installing a metal-doped metal oxide among the main material layers, thereby further improving the conductivity of the tunneling structure, reducing the internal resistance of the stacked solar cell, and improving the filling factor and efficiency of the stacked solar cell. Aluminum and indium have superior conductivity and are advantageous for improving the conductivity of the main material layer by doping aluminum and indium into the metal oxide; magnesium has superior light transmittance and is advantageous for improving the light transmittance of the tunneling structure by doping magnesium into the metal oxide.

[0027] In one possible embodiment, the metal-doped metal oxide comprises at least one of indium-doped copper oxide, magnesium-doped copper oxide, and aluminum-doped copper oxide. Indium-doped copper oxide, magnesium-doped copper oxide, and aluminum-doped copper oxide have superior stability and conductivity, which is advantageous for improving the stability and efficiency of a stacked solar cell.

[0028] In one possible embodiment, the first light-absorbing layer is a perovskite layer, and the second light-absorbing layer is a perovskite layer. Both the first light-absorbing layer and the second light-absorbing layer are perovskite layers, and thus the stacked solar cell is a perovskite / perovskite stacked solar cell, and the cell has a higher efficiency.

[0029] In one possible embodiment, the band gap of the first light absorption layer is larger than the band gap of the second light absorption layer.

[0030] In the technical solution described above, the bandgap of the first light absorption layer is larger than the bandgap of the second light absorption layer, which is advantageous for improving the solar energy utilization rate and improving the efficiency of the stacked solar cell.

[0031] In one possible embodiment, the chemical formula of the perovskite in the perovskite layer is ABX3 or A2CDX6, wherein A comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation; B comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation; C comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation; D comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation; and X comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation. This makes it convenient to flexibly select a specific type of perovskite according to actual demand.

[0032] In one possible embodiment, A is CH3NH3 + , CH(NH2)2 + , Li + , Na + , K + , Rb + , Cs + Includes at least one of the following, and B is Pb 2+ , Sn 2+ , Be 2+ , Mg 2+ , Ca 2+ , Sr2+ , Ba 2+ , Zn 2+ , Ge 2+ , Fe 2+ , Co 2+ , Ni 2+ Includes at least one of the following, and X is F - , Cl - , Br - , I - Includes at least one of them.

[0033] In one possible embodiment, A is CH3NH3 + , CH(NH2)2 + Includes at least one of the following, and B is Pb 2+ , Sn 2+ Includes at least one of the following, and X is Cl - , Br - , I - Includes at least one of them.

[0034] In one possible embodiment, the stacked solar cell comprises a first electrode layer and a second electrode layer, wherein along the first direction, the first electrode layer, the first subcell, the tunneling structure, the second subcell, and the second electrode layer are sequentially arranged, and the material of the first electrode layer comprises a transparent metal oxide.

[0035] In the technical solution described above, sunlight can pass through the first electrode layer, so that the first light absorption layer and the second light absorption layer are irradiated by sunlight, and furthermore, it is convenient to generate photocurrent in a stacked solar cell.

[0036] In one possible embodiment, the material of the second electrode layer comprises at least one of a metal, an alloy thereof, and a metal oxide. This makes it convenient to flexibly select a specific type of material among the electrode layers according to actual demand.

[0037] In one possible embodiment, the material of the second electrode layer comprises at least one of Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, and W.

[0038] In one possible embodiment, the material of the first electrode layer comprises at least one of fluorine-doped tin oxide, indium-doped tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide. By doing so, the first electrode layer can have better conductivity and light transmittance.

[0039] In one possible embodiment, the material of the hole transport layer comprises a P-type semiconductor, and the material of the electron transport layer comprises an N-type semiconductor. This makes it convenient to flexibly select the appropriate material of the hole transport layer and the material of the electron transport layer according to actual conditions.

[0040] In one possible embodiment, the material of the hole transport layer is poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly3-hexylthiophene, triphenylamine with a tryptysene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamine)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid), polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide and derivatives thereof, or doped or passivated poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly3-hexylthiophene, triphenylamine with a tryptysene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamine)carbazole-spirobifluorene, Poly(3,4-ethylenedioxythiophene): at least one of poly(styrene sulfonic acid), polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, and cuprous oxide; optionally, the material of the electron transport layer comprises [6,6]-phenyl-C61-isomethylbutyrate, [6,6]-phenyl C71-methylbutyrate, C60, C70, tin dioxide, zinc oxide and derivatives thereof, or at least one of doped or passivated [6,6]-phenyl-C61-isomethylbutyrate, [6,6]-phenyl C71-methylbutyrate, C60, C70, tin dioxide, and zinc oxide.

[0041] According to a second embodiment, a method for manufacturing a stacked solar cell is provided, comprising the step of providing a first subcell, a tunneling structure, and a second subcell; wherein the first subcell comprises a first carrier transport layer, a first light absorption layer, and a second carrier transport layer arranged sequentially along a first direction, the first direction being the incident direction of sunlight; the second subcell comprises a third carrier transport layer, a second light absorption layer, and a fourth carrier transport layer arranged sequentially along the first direction; and the tunneling structure comprises a main material layer and an auxiliary material layer, wherein the main material layer comprises a metal-doped metal oxide, the auxiliary material layer comprises an N-type semiconductor material or a P-type semiconductor material, the auxiliary material layer is located between the main material layer and the third carrier transport layer, and the main material layer is located between the second carrier transport layer and the auxiliary material layer. A stacked solar cell manufactured by this method has higher efficiency and stability.

[0042] In one possible embodiment, the step of providing a first sub-cell, a tunneling structure, and a second sub-cell comprises: a step of manufacturing the main material layer by manufacturing the metal-doped metal oxide on the first sub-cell; a step of manufacturing the tunneling structure by manufacturing the N-type semiconductor material or the P-type semiconductor material on the surface of the main material layer; and a step of manufacturing the second sub-cell on the tunneling structure. By doing so, a stacked solar cell having a tunneling structure can be obtained through the method described above.

[0043] In one possible embodiment, the step of manufacturing the tunneling structure by manufacturing the N-type semiconductor material or the P-type semiconductor material on the surface of the main material layer comprises spin-coating a solution of the P-type semiconductor material on the surface of the main material layer, wherein the concentration of the P-type semiconductor material in the solution is 0.005 mg / ml to 0.05 mg / ml. By doing so, an auxiliary material layer in the tunneling structure can be obtained.

[0044] In one possible embodiment, the concentration of the P-type semiconductor material in the solution is 0.01 mg / ml to 0.03 mg / ml.

[0045] According to a third embodiment, an electric device comprising a perovskite cell according to a first embodiment and any of the possible embodiments thereof is provided. Effects of the invention

[0046] An embodiment of the present application provides a stacked solar cell comprising a first subcell, a tunneling structure, and a second subcell arranged sequentially along a first direction, wherein the first direction is the direction of incidence of sunlight. The tunneling structure is located between the first subcell and the second subcell and can electrically connect the first subcell and the second subcell to form a stacked cell. The first subcell comprises a first carrier transport layer, a first light absorption layer, and a second carrier transport layer arranged sequentially along the first direction; and the second subcell comprises a third carrier transport layer, a second light absorption layer, and a fourth carrier transport layer arranged sequentially along the first direction. The first light absorption layer and the second light absorption layer can generate electron-hole pairs under sunlight irradiation, and the first carrier transport layer, the second carrier transport layer, the third carrier transport layer, and the fourth carrier transport layer can transport electrons or holes. The tunneling structure comprises a main material layer and an auxiliary material layer, wherein the main material layer comprises a metal-doped metal oxide, and the auxiliary material layer comprises an N-type semiconductor material or a P-type semiconductor material. By installing the main material layer, the resistance between the tunneling structure and the first or second sub-cell can be reduced, which is advantageous for improving the fill factor of the stacked solar cell; and by installing the auxiliary material layer, the carrier compounding between the tunneling structure and the first or second sub-cell is advantageous. The auxiliary material layer is located between the main material layer and the third carrier transport layer, thereby being advantageous for reducing carrier loss between the second carrier transport layer and the third carrier transport layer; and the main material layer is located between the second carrier transport layer and the auxiliary material layer, thereby being advantageous for reducing the resistance between the second carrier transport layer and the third carrier transport layer and for improving the fill factor of the stacked solar cell. Accordingly, the technical solution of the embodiment of the present application is advantageous for improving the efficiency of the stacked solar cell. Brief explanation of the drawing

[0047] FIG. 1 is a schematic diagram of a stacked solar cell according to one embodiment of the present application. FIG. 2 is a schematic diagram of a method for manufacturing a stacked solar cell according to one embodiment of the present application. FIG. 3 is a schematic diagram of an electric device according to one embodiment of the present application. Specific details for implementing the invention

[0048] In the following, embodiments of the stacked solar cell, the method for manufacturing the same, and the electrical device of the present application are described in detail and disclosed with appropriate reference to the drawings. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of known matters and redundant descriptions of structures that are identical in practice may be omitted. This is intended to prevent the following description from becoming unnecessarily tedious and to facilitate understanding by those skilled in the art. Furthermore, the drawings and the following description are provided to enable those skilled in the art to fully understand the present application and are not intended to limit the categories described in the claims.

[0049] The “range” disclosed in this application is limited in the form of lower and upper limits, and a given range is limited by selecting one lower limit and one upper limit, and the selected lower limit and upper limit define the boundaries of a specific range. A range limited in this way may or may not include the values ​​of the endpoints and may also be arbitrarily combined, that is, any lower limit may be combined with any upper limit to form a single range. For example, if ranges of 60 to 120 and 80 to 110 are listed for a specific parameter, it is expected that they are understood as ranges of 60 to 110 and 80 to 120. Furthermore, if minimum range values ​​1 and 2 are listed, and maximum range values ​​3, 4 and 5 are listed, the following ranges may all be expected to be 1 to 3, 1 to 4, 1 to 5, 2 to 3, 2 to 4, and 2 to 5. In this application, unless otherwise stated, the numeric range “a to b” represents an abbreviated expression of any combination of real numbers between a and b, where a and b are both real numbers. For example, the numeric range “0 to 5” means that all real numbers between “0 to 5” are listed in this application, and “0 to 5” is merely an abbreviated expression of such combination of numbers. Additionally, if a parameter is an integer ≥ 2, this parameter is disclosed as, for example, integers 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0050] Unless otherwise specified, all embodiments and optional embodiments of the present application may be combined with one another to form a new technical solution.

[0051] Unless otherwise specified, all technical features and optional technical features of the present application may be combined to form a new technical solution.

[0052] Unless otherwise specified, all steps of the present application may be performed sequentially, may be performed randomly, and preferably sequentially. For example, the method comprises steps (a) and (b), which indicates that the method may comprise steps (a) and (b) performed sequentially and steps (b) and (a) performed sequentially. For example, the aforementioned method may further comprise step (c), which indicates that step (c) may be added to the method in any order, for example, the method may comprise steps (a), (b), and (c), may comprise steps (a), (c), and (b), and may comprise steps (c), (a), and (b).

[0053] Stacked solar cells are a type of solar cell that possesses higher photoelectric conversion efficiency and offers excellent application prospects. The installation of each film layer in a stacked solar cell is critical to performance, including efficiency and stability. A stacked solar cell generally comprises a transparent conductive substrate, a first sub-cell, a tunneling structure, a second sub-cell, and a metal electrode layer. The tunneling structure is used to connect the first and second sub-cells, and while the material of the tunneling structure is typically metal, tunneling structures made of metal easily degrade the stability of the stacked solar cell.

[0054] To improve the stability of stacked solar cells, metal materials are replaced with metal oxide materials in some processing methods. However, metal oxide materials have lower conductivity compared to metal materials, which is disadvantageous for improving the efficiency of stacked solar cells.

[0055] In light of this, the present application provides a stacked solar cell comprising a first subcell, a tunneling structure, and a second subcell. The material of the tunneling structure comprises a main material layer and an auxiliary material layer, wherein the main material layer comprises a metal-doped metal oxide and the auxiliary material layer comprises an N-type semiconductor material or a P-type semiconductor material, which is advantageous for improving the efficiency of the stacked solar cell.

[0056] [Stacked Solar Cell]

[0057] FIG. 1 is a schematic diagram of a stacked solar cell according to one embodiment of the present application. As shown in FIG. 1, the stacked solar cell (2) comprises a first sub-cell (21), a tunneling structure (23), and a second sub-cell (22) arranged sequentially along a first direction, wherein the first direction is the direction of incidence of sunlight.

[0058] The first direction may be the thickness direction of the stacked solar cell (2). For example, the first direction is the z direction in FIG. 1.

[0059] The first sub-cell (21) includes a first carrier transport layer (211), a first light absorption layer (212), and a second carrier transport layer (213) arranged sequentially along a first direction; and the second sub-cell (22) includes a third carrier transport layer (221), a second light absorption layer (222), and a fourth carrier transport layer (223) arranged sequentially along a first direction.

[0060] The first light absorption layer (212) and the second light absorption layer (222) can generate electron-hole pairs under sunlight irradiation. Here, both electrons and holes may be referred to as carriers.

[0061] The first carrier transport layer (211), the second carrier transport layer (213), the third carrier transport layer (221), and the fourth carrier transport layer (223) can transmit carriers. Specifically, depending on the materials of the first carrier transport layer (211), the second carrier transport layer (213), the third carrier transport layer (221), and the fourth carrier transport layer (223), each of the above-described film layers can transmit electrons or holes.

[0062] The tunneling structure (23) is located between the first sub-cell (21) and the second sub-cell (22), and can connect the first sub-cell (21) and the second sub-cell (22), making it convenient to form a stacked solar cell.

[0063] The tunneling structure (23) includes a main material layer (231) and an auxiliary material layer (232), the main material layer (231) includes a metal-doped metal oxide, and the auxiliary material layer (232) includes an N-type semiconductor material or a P-type semiconductor material.

[0064] Metal-doped metal oxides can refer to metal oxides doped with a specific amount of metal. Here, the doped metal may differ from the metal within the metal oxide. For example, metal-doped oxides include indium-doped tin oxide and aluminum-doped copper oxide.

[0065] Compared to a tunneling structure in which the material is metal and the main material layer (231) contains a metal-doped metal oxide, the tunneling structure (23) containing the metal-doped metal oxide has superior performance and, when applied to a stacked solar cell (2), the stacked solar cell (2) has higher stability. Compared to a tunneling structure in which the material is metal oxide, the conductivity of the metal-doped metal oxide is superior, so the conductivity of the tunneling structure (23) according to the embodiment of the present application is superior, and when applied to a stacked solar cell (2), the stacked solar cell (2) has a higher current density and a filling factor, so the stacked solar cell (2) has higher efficiency.

[0066] The auxiliary material layer (232) includes an N-type semiconductor material or a P-type semiconductor material. The N-type semiconductor material can transmit holes, and the P-type semiconductor material can transmit electrons. Specifically, the auxiliary material layer (232) can be installed depending on whether it contacts the electron transmission layer or the hole transmission layer in the stacked solar cell (2). For example, if the auxiliary material layer (232) contacts the hole transmission layer, the auxiliary material layer (232) includes an N-type semiconductor material; if the auxiliary material layer (232) contacts the electron transmission layer, the auxiliary material layer (232) includes a P-type semiconductor material. By installing the auxiliary material layer (232), it is advantageous for the transmission of electrons or holes, advantageous for reducing the loss of electrons or holes between the first sub-cell (21) and the second sub-cell (22), and advantageous for improving the efficiency of the stacked solar cell (2).

[0067] The efficiency of a solar cell can refer to its conversion efficiency, which means the ratio of the maximum output power when light is irradiated onto the cell to the power of the incident light irradiated onto the cell.

[0068] The filler factor of a solar cell can be used to measure its photoelectric conversion efficiency. Generally, the higher the filler factor, the higher the photoelectric conversion efficiency. The filler factor is related to current density, which refers to the current per unit area; therefore, a larger current area is advantageous for improving the filler factor.

[0069] The auxiliary material layer (232) is located between the main material layer (231) and the third carrier transport layer (221), and the main material layer (231) is located between the second carrier transport layer (213) and the auxiliary material layer (232).

[0070] The materials of the auxiliary material layer (232) and the third carrier transport layer (221) are both N-type semiconductor materials, or the materials of the auxiliary material layer (232) and the third carrier transport layer (221) are both P-type semiconductor materials.

[0071] Optionally, a specific location of the auxiliary material layer (232) is related to the manufacturing order of the first sub-cell (21) and the second sub-cell (22). For example, in the process of manufacturing a stacked solar cell (2), the first sub-cell (21) is first manufactured on a conductive glass substrate, then the main material layer (231) is first manufactured on the surface of the first sub-cell (21), then the auxiliary material layer (232) is manufactured on the surface of the main material layer (231), and then the second sub-cell (22) is manufactured on the surface of the auxiliary material layer (232).

[0072] The auxiliary material layer (232) is located between the main material layer (231) and the third carrier transport layer (221), thereby being advantageous for reducing carrier loss between the second carrier transport layer (213) and the third carrier transport layer (221); the main material layer (231) is located between the second carrier transport layer (213) and the auxiliary material layer (232), thereby being advantageous for reducing resistance between the second carrier transport layer (213) and the third carrier transport layer (221) and for improving the filling factor of the stacked solar cell (2). Accordingly, the technical solution of this embodiment is advantageous for improving the efficiency of the stacked solar cell (2).

[0073] An embodiment of the present application provides a stacked solar cell (2) comprising a first sub-cell (21), a tunneling structure (23), and a second sub-cell (22) arranged sequentially along a first direction. The tunneling structure (23) is located between the first sub-cell (21) and the second sub-cell (22) and can connect the first sub-cell (21) and the second sub-cell (22), making it convenient to form a stacked solar cell. The tunneling structure (23) includes a main material layer (231) and an auxiliary material layer (232), wherein the main material layer (231) comprises a metal-doped metal oxide, and the auxiliary material layer (232) comprises an N-type semiconductor material or a P-type semiconductor material. By installing the main material layer (231), it is advantageous to improve the filling factor and stability of the stacked solar cell (2); By installing an auxiliary material layer (232), it is advantageous for the transmission of electrons or holes and for reducing the loss of electrons or holes between the first sub-cell (21) and the second sub-cell (22). Accordingly, the technical solution of the embodiment of the present application is advantageous for improving the efficiency and stability of the stacked solar cell (2).

[0074] In some embodiments, the first carrier transport layer (211) is a hole transport layer, the second carrier transport layer (213) is an electron transport layer, the third carrier transport layer (221) is a hole transport layer, the fourth carrier transport layer (223) is an electron transport layer, and the auxiliary material layer (232) includes a P-type semiconductor material.

[0075] In this embodiment, the material of the auxiliary material layer (232) is a P-type semiconductor material, and the third carrier transport layer (221) is a hole transport layer, which is advantageous for reducing carrier loss between the second carrier transport layer (213) and the third carrier transport layer (221) and for improving the efficiency of the stacked solar cell (2).

[0076] In some embodiments, the P-type semiconductor material comprises at least one of compound (I) and compound (II), and

[0077]

[0078] Here, A is , , , Includes at least one of the following;

[0079] R is -(CH2) n Includes -, and n is a natural number from 1 to 6;

[0080] R1, R2, R3, and R4 each independently contain at least one of -H, -CH3, -C2H5, -OCH3, -OC2H5, -X, -NH2, and A, and X contains a halogen element.

[0081] n is a natural number from 1 to 6, for example, n is 1, 2, 3, 4, 5, 6. R may include -CH2-, -CH2-CH2-, -CH2-CH2-CH2-, and -CH2-CH2-CH2-CH2-CH2-CH2-.

[0082] Halogen elements may include fluorine, chlorine, bromine, and iodine. -X may include at least one of -F, -Cl, -Br, and -I, amino may be -NH2, methoxy may be CH3O-, ethoxy may be C2H5O-, methyl may be -CH3, and ethyl may be -C2H5.

[0083] Optionally, the P-type semiconductor comprises at least one of [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid, 2-(4-(diphenylamino)phenyl)acetic acid, and [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid.

[0084] [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid may also be referred to as Me-4PACz, and [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid may also be referred to as MeO-4PACz.

[0085] The structural formula of [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid am.

[0086] In the case of 2-(4-(diphenylamino)phenyl)acetic acid, its structural formula satisfies the general formula of compound (II), where R is -CH2, A is -COOH, and R3 and R4 are both -H.

[0087] By selecting compound (I) or compound (II) as the material of the auxiliary material layer (232), the stacked solar cell (2) has a higher efficiency.

[0088] Optionally, P-type semiconductor materials include molecular self-assembled materials. Here, molecular self-assembly may refer to materials having an ordered structure that is spontaneously formed by basic structural units (molecules or segments of molecules). For example, [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid is a material formed through molecular self-assembly.

[0089] In some embodiments, the first carrier transport layer (211) is an electron-hole transport layer, the second carrier transport layer (213) is a hole transport layer, the third carrier transport layer (221) is an electron transport layer, the fourth carrier transport layer (223) is a hole transport layer, and the auxiliary material layer (232) includes an N-type semiconductor material.

[0090] In this embodiment, the material of the auxiliary material layer (232) is an N-type semiconductor material, and the third carrier transport layer (221) is an electron transport layer, which is advantageous for reducing carrier loss between the second carrier transport layer (213) and the third carrier transport layer (221) and for improving the efficiency of the stacked solar cell (2).

[0091] In some embodiments, the thickness (d1) of the main material layer (231) is 0.5 nm to 2 nm. For example, d1 is 0.5 nm, 0.8 nm, 0.9 nm, 1 nm, 1.2 nm, 1.5 nm, 2 nm, or any value within the range described above.

[0092] If the thickness of the main material layer (231) is 0.5 nm or more, it is advantageous for reducing the difficulty of manufacturing the main material layer (231) and convenient for manufacturing the main material layer (231); if the thickness of the main material layer (231) is 2 nm or less, it is advantageous for reducing carrier loss and convenient for carrier transmission, which is advantageous for improving the efficiency of the stacked solar cell (2).

[0093] Optionally, the thickness (d1) of the main material layer (231) is 0.5 nm to 1.5 nm. This makes it convenient to manufacture the main material layer (231) and, based on this, further improves the efficiency of the stacked solar cell (2).

[0094] In some embodiments, the thickness (d2) of the auxiliary material layer (232) is less than 1 nm. For example, 0.1 nm, 0.9 nm. By installing an auxiliary material layer (232) with a smaller thickness, the stacked solar cell (2) can be made to have a higher efficiency.

[0095] Optionally, the thickness of the auxiliary material layer (232) is 0.5 nm to 0.8 nm, for example, 0.5 nm, 0.6 nm, or 0.8 nm. Thus, the stacked solar cell (2) has a higher efficiency.

[0096] In some embodiments, in the main material layer (231), the metal oxide comprises at least one of tin oxide, zinc oxide, and copper oxide, and the doped metal comprises at least one of aluminum, indium, and magnesium.

[0097] Among metal oxides, tin oxide, zinc oxide, and copper oxide have superior conductivity; among metals, aluminum, indium, and magnesium have superior conductivity. Therefore, installing a metal-doped metal oxide in the main material layer (231) is advantageous for further improving the conductivity of the main material layer (231), further improving the conductivity of the tunneling structure (23), reducing the internal resistance of the stacked solar cell (2), and improving the filling factor and efficiency of the stacked solar cell (2).

[0098] Aluminum and indium have superior conductivity, and doping aluminum and indium into the metal oxide is advantageous for improving the conductivity of the main material layer (231); magnesium has superior light transmittance, and doping magnesium into the metal oxide is advantageous for improving the light transmittance of the tunneling structure (23) and for manufacturing a transparent stacked solar cell (2).

[0099] Optionally, metal oxides include copper oxide. Copper oxide is easier to manufacture and obtain, which is advantageous for reducing production costs.

[0100] Optionally, the metal-doped metal oxide comprises at least one of indium-doped copper oxide, magnesium-doped copper oxide, and aluminum-doped copper oxide.

[0101] Indium-doped copper oxide, magnesium-doped copper oxide, and aluminum-doped copper oxide have superior stability and conductivity, which is advantageous for improving the stability and efficiency of the stacked solar cell (2).

[0102] In some embodiments, the first light absorption layer (212) is a perovskite layer, and the second light absorption layer (222) is a perovskite layer. Both the first light absorption layer and the second light absorption layer are perovskite layers, and thus the stacked solar cell (2) is a perovskite / perovskite stacked solar cell (2), and the cell has a higher efficiency.

[0103] Optionally, the first light absorption layer (212) is a perovskite layer, and the second light absorption layer (222) is a copper indium gallium selenide layer. In the embodiments of the present application, the material of the light absorption layer may be installed according to actual demand, and the present application includes but is not limited thereto.

[0104] In some embodiments, the band gap of the first light absorption layer (212) is larger than the band gap of the second light absorption layer (222).

[0105] Specifically, sunlight first passes through the first sub-cell (21) and then through the second sub-cell (22). That is, the first light absorption layer (212) in the first sub-cell (21) absorbs a portion of sunlight, and the second light absorption layer (222) in the second sub-cell (22) absorbs another portion of sunlight, which is advantageous for improving the utilization efficiency of sunlight.

[0106] In this embodiment, the band gap of the first light absorption layer (212) is larger than the band gap of the second light absorption layer (222), which is advantageous for improving the solar energy utilization rate and improving the efficiency of the stacked solar cell (2).

[0107] In some embodiments, the chemical formula of the perovskite in the perovskite layer is ABX3 or A2CDX6, wherein A comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation; B comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation; C comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation; D comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation; and X comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation.

[0108] A contains an organic cation, for example, A is CH3NH3 + It can be. A contains an inorganic cation, for example, A is K + , Rb +It may be. A includes organic-inorganic mixed cations; for example, A is a cation formed by assembling an organic cation and an inorganic cation. Similarly, the classification of ions among B, C, D, and X can be found in the description of A.

[0109] In the above-described embodiment, a perovskite layer can be manufactured by selecting a perovskite material having corresponding ions according to actual demand.

[0110] Optionally, A is CH3NH3 + , CH(NH2)2 + , Li + , Na + , K + , Rb + , Cs + Includes at least one of the following, and B is Pb 2+ , Sn 2+ , Be 2+ , Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ , Zn 2+ , Ge 2+ , Fe 2+ , Co 2+ , Ni 2+ Includes at least one of the following, and X is F - , Cl - , Br - , I - It includes at least one of the following; optionally, A is CH3NH3 + , CH(NH2)2 + Includes at least one of the following, and B is Pb 2+ , Sn 2+ Includes at least one of the following, and X is Cl - , Br - , I - It includes at least one of the following. This makes it convenient to flexibly select a specific type of perovskite according to actual demand.

[0111] In some embodiments, the perovskite is Cs 0.35 FA0.65 PbI 1.8 Br 1.2 , Cs 0.09 FA 0.77 MA 0.14 Pb(I 0.86 Br 0.14 )3 days, where FA is formamidine ion and MA is methylamine ion.

[0112] In some embodiments, the stacked solar cell (2) comprises a first electrode layer (24) and a second electrode layer (25), and along a first direction, the first electrode layer (24), a first sub-cell (21), a tunneling structure (23), a second sub-cell (22), and the second electrode layer (25) are arranged sequentially, and the material of the first electrode layer (24) comprises a transparent metal oxide.

[0113] In this embodiment, sunlight can pass through the first electrode layer (24), so that the first light absorption layer (212) and the second light absorption layer (222) are irradiated by sunlight, further making it convenient to generate photocurrent in the stacked solar cell (2).

[0114] In some embodiments, the material of the second electrode layer (25) comprises at least one of a metal, an alloy thereof, and a metal oxide. This makes it convenient to flexibly select a specific type of material among the electrode layers according to actual demand.

[0115] Optionally, the material of the second electrode layer (25) includes at least one of Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, and W. Thus, all of the aforementioned metals are suitable for manufacturing the first electrode layer (24), making it convenient to flexibly select the metal type according to actual demand.

[0116] In some embodiments, the material of the first electrode layer (24) includes metals and alloys thereof, such as silver-copper alloy, molybdenum-tungsten alloy, etc.

[0117] In some embodiments, the material (24) of the first electrode layer comprises at least one of fluorine-doped tin oxide (FTO), indium-doped tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), and indium-doped zinc oxide (IZO). Thus, the first electrode layer (24) can have better conductivity and light transmittance.

[0118] Optionally, the materials of the first electrode layer (24) and the second electrode layer (25) are both metal oxides. For example, both are FTO.

[0119] In some embodiments, the material of the hole transport layer comprises a P-type semiconductor, and the material of the electron transport layer comprises an N-type semiconductor.

[0120] Optionally, the material of the hole transport layer is poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly 3-hexylthiophene, tryptysene-cored triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamine)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid), polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide and derivatives thereof, or doped or passivated poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly 3-hexylthiophene, tryptysene-cored triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamine)carbazole-spirobifluorene, Poly(3,4-ethylenedioxythiophene): comprises at least one of poly(styrene sulfonic acid), polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, and cuprous oxide. The molecular formula of nickel oxide is NiOx, where the valence state of nickel may vary depending on the actual situation. Here, passivation may mean partially modifying the hole transport layer using some small molecules or compounds. For example, the material of the hole transport layer includes nickel oxide, and after manufacturing nickel oxide, a layer of small molecules is manufactured on the surface of the nickel oxide to improve the performance of the hole transport layer.

[0121] Optionally, the material of the electron transport layer comprises [6,6]-phenyl-C61-isomethylbutyrate, [6,6]-phenyl C71-methylbutyrate, C60, C70, tin dioxide, zinc oxide and derivatives thereof, or at least one of doped or passivated [6,6]-phenyl-C61-isomethylbutyrate, [6,6]-phenyl C71-methylbutyrate, C60, C70, tin dioxide, and zinc oxide. This makes it convenient to flexibly select appropriate materials for the hole transport layer and the electron transport layer according to actual conditions. Here, passivation may mean partially modifying the electron transport layer using some small molecules or compounds. For example, the material of the electron transport layer includes tin dioxide, and after preparing the tin dioxide, a layer of small molecules is prepared on the surface of the tin dioxide to improve the performance of the electron transport layer.

[0122] In some embodiments, the stacked solar cell (2) further comprises a plurality of cell units arranged along a second direction. The second direction is perpendicular to the first direction, and, for example, combining the illustration of FIG. 1, the second direction is the x direction.

[0123] A stacked solar cell (2) includes a first groove, a second groove, and a connecting structure. The first groove and the second groove are used to separate the first electrode layer (24) and the second electrode layer (25) of adjacent cell units, respectively, and the connecting structure is used to electrically connect the first electrode layer (24) of one cell unit and the second electrode layer (25) of another cell unit among adjacent cell units.

[0124] [Method for manufacturing a perovskite cell]

[0125] FIG. 2 is a method for manufacturing a perovskite cell according to one embodiment of the present application. As illustrated in FIG. 2, the method (100) comprises the step of providing a first sub-cell (21), a tunneling structure (23), and a second sub-cell (22); wherein the first sub-cell (21) comprises a first carrier transport layer (211), a first light absorption layer (212), and a second carrier transport layer (213) arranged sequentially along a first direction, the first direction being the incident direction of sunlight; and the second sub-cell (22) comprises a third carrier transport layer (221), a second light absorption layer (222), and a fourth carrier transport layer (223) arranged sequentially along the first direction; The tunneling structure (23) comprises a main material layer (231) and an auxiliary material layer (232), wherein the main material layer (231) comprises a metal-doped metal oxide, and the auxiliary material layer (232) comprises an N-type semiconductor material or a P-type semiconductor material, and the auxiliary material layer (232) is located between the main material layer (231) and the third carrier transport layer (221), and the main material layer (231) is located between the second carrier transport layer (213) and the auxiliary material layer (232). A stacked solar cell (2) manufactured by this method has higher efficiency and stability.

[0126] In some embodiments, the method (100) comprises the steps of: manufacturing a main material layer (231) by manufacturing a metal-doped metal oxide on a first sub-cell (21); manufacturing a tunneling structure (23) by manufacturing an N-type semiconductor material or a P-type semiconductor material on the surface of the main material layer (231); and manufacturing a second sub-cell (22) on the tunneling structure (23). By doing so, a stacked solar cell (2) having a tunneling structure can be obtained through the above-described method.

[0127] In some embodiments, the step of manufacturing a tunneling structure (23) by manufacturing an N-type semiconductor material or a P-type semiconductor material on the surface of a main material layer (231) involves spin-coating a solution of a P-type semiconductor material on the surface of the main material layer (231), wherein the concentration of the P-type semiconductor material in the solution is 0.005 mg / ml to 0.05 mg / ml; optionally, 0.01 mg / ml to 0.03 mg / ml. By doing so, an auxiliary material layer (232) in the tunneling structure can be obtained.

[0128] The concentration of the P-type semiconductor material in the solution may be 0.005 mg / ml, 0.01 mg / ml, 0.02 mg / ml, 0.03 mg / ml, 0.05 mg / ml, or any value within the ranges described above.

[0129] [Electrical device]

[0130] An embodiment of the present application provides an electric device comprising a perovskite cell according to any of the embodiments described above.

[0131] FIG. 3 is a schematic diagram of an electric device according to one embodiment of the present application. As shown in FIG. 3, the electric device may be a vehicle.

[0132] In some embodiments, the electrical device may be a lighting device, an energy storage device, etc., and the embodiments of the present application include but are not limited thereto.

[0133] Examples

[0134] The following describes embodiments of the present application. The embodiments described below are illustrative and are intended only for interpreting the present application and should not be understood as a limitation thereof. Where specific techniques or conditions are not specified in the embodiments, they shall be performed in accordance with the techniques or conditions described in the literature of the art or in the product description.

[0135] Example 1

[0136] Example 1 corresponds to the structure shown in FIG. 1, and in Example 1, the first electrode layer (24) is installed on a glass substrate, the material of the first electrode layer (24) is indium tin oxide (ITO), the material of the second electrode layer (25) is copper, and the thickness of the second electrode layer (25) is 80 nm.

[0137] In the first sub-cell (21), the first carrier transport layer (211) is a hole transport layer, the second carrier transport layer (213) is an electron transport layer, the first light absorption layer (212) is a perovskite layer, and the material of the first light absorption layer (212) comprises FA0.7MA0.3Pb0.5Sn0.5I3, FA is a formamidine ion and MA is a methylamine ion.

[0138] In the second sub-cell (22), the third carrier transport layer (221) is a hole transport layer, the fourth carrier transport layer (223) is an electron transport layer, the second light absorption layer (222) is a perovskite layer, and the material of the second light absorption layer (222) includes FA0.8Cs0.2Pb(I0.6Br0.4)3.

[0139] The tunneling structure (23) is located between the second carrier transport layer (213) and the third carrier transport layer (221), and the main material layer (231) is located between the second carrier transport layer (213) and the auxiliary material layer (232). The material of the main material layer (231) is indium-doped copper oxide, and the thickness (d1) of the main material layer (231) is 1 nm; the material of the auxiliary material layer (232) is 4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid, and the thickness (d2) of the auxiliary material layer (232) is 0.5 nm.

[0140] Examples 2 to 4

[0141] The difference between Examples 2 to 4 and Example 1 is that the material of the auxiliary material layer (232) is different.

[0142] In Examples 2 to 4, the materials of the auxiliary material layer (232) are 2-(4-(diphenylamino)phenyl)acetic acid, [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid, and poly(3-hexylthiophene-2,5-diyl), respectively.

[0143] Here, the structural formula of poly(3-hexylthiophene-2,5-diyl) is satisfies.

[0144] Examples 5 to 7

[0145] The difference between Examples 5 to 7 and Example 1 is that the material of the main material layer (231) is different.

[0146] In Examples 5 to 7, the material of the main material layer (231) is aluminum-doped copper oxide, magnesium-doped copper oxide, and indium-doped tin oxide, respectively.

[0147] Example 8

[0148] The difference between Example 8 and Example 1 is that the first light absorption layer (212) is silicon and the second light absorption layer (222) is a perovskite layer.

[0149] Example 9

[0150] The difference between Example 9 and Example 1 is that the first carrier transport layer (211) is an electron-hole transport layer, the second carrier transport layer (213) is a hole transport layer, the third carrier transport layer (221) is an electron transport layer, and the fourth carrier transport layer (223) is a hole transport layer. The material of the auxiliary material layer (232) is tin dioxide manufactured through atomic layer deposition (ALD) technology.

[0151] Examples 10 to 13

[0152] The difference between Examples 10 to 13 and Example 1 is that the thickness of the main material layer (231) is different.

[0153] In Examples 10 to 13, the thickness of the main material layer (231) is sequentially 0.5 nm, 0.8 nm, 1 nm, 1.5 nm, and 2 nm.

[0154] Examples 14 to 15

[0155] The difference between Examples 14 and 15 and Example 1 is that the thickness of the auxiliary material layer (232) is different.

[0156] In Examples 1 to 15, the thickness of the first light absorption layer is 350 nm, the thickness of the second light absorption layer is 800 nm, the thickness of the first carrier transmission layer is 20 nm, the thickness of the second carrier transmission layer is 50 nm, the thickness of the third carrier transmission layer is 20 nm, and the thickness of the fourth carrier transmission layer is 50 nm.

[0157] Comparative Example 1

[0158] The difference between Comparative Example 1 and Example 1 is that the tunneling structure in Comparative Example 1 did not include an auxiliary material layer, and the material of the tunneling structure was copper oxide.

[0159] Comparative Example 2

[0160] The difference between Comparative Example 2 and Example 1 is that the tunneling structure in Comparative Example 2 did not include an auxiliary material layer, and the material of the tunneling structure was copper.

[0161] Comparative Example 3

[0162] The difference between Comparative Example 3 and Example 1 is that in Comparative Example 3, the tunneling structure did not include an auxiliary material layer, and the material of the tunneling structure was indium-doped copper oxide.

[0163] Method for manufacturing a stacked solar cell in Example 1:

[0164] (1) 20 sheets of ITO conductive glass with dimensions of 2.0*2.0 cm were taken and 0.35 cm of ITO was removed from both ends by laser etching to expose the glass substrate; the etched ITO conductive glass was ultrasonically cleaned several times using water, acetone, and isopropanol in sequence; the solvent on the ITO conductive glass was dried with a nitrogen gun and then placed in a UV ozone machine for further cleaning.

[0165] (2) 2 mg / mL of poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine) (PTAA) was spin-coated as a hole transport layer on UV-ozone-treated ITO conductive glass at a speed of 5000 rpm / s, and then annealed on a hot plate at 100°C for 10 minutes.

[0166] (3) A perovskite precursor solution was spin-coated onto a hole transport layer at 1000 to 5000 rpm / s, annealed at 100°C for 30 minutes, and cooled to room temperature to prepare a perovskite layer. The band gap of the perovskite layer is 1.3 eV.

[0167] (4) [6,6]-phenyl C61 methyl butyrate (PCBM) was spin-coated onto a perovskite layer at 1000 to 1500 rpm / s and annealed at 100°C for 10 minutes to prepare an electron transport layer. Then, a passivation layer vasocuproin (BCP) was spin-coated at 5000 rpm / s.

[0168] (5) The product obtained in step (4) is placed in a magnetic sputtering apparatus to deposit indium-doped copper oxide, thereby producing the main material layer of the tunneling structure; then, 0.03 mg / mL of small molecules of carbazole phosphate is spin-coated at a speed of 5000 rpm / s and annealed for later use to obtain an auxiliary material layer of the tunneling structure, thereby obtaining the tunneling structure.

[0169] (6) 2 mg / mL of poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine) (PTAA) was spin-coated as a hole transport layer on a tunneling structure at a speed of 5000 rpm / s, and then annealed on a hot plate at 100°C for 10 minutes.

[0170] (7) A perovskite precursor solution was spin-coated onto a hole transport layer at a speed of 1000 to 5000 rpm / s, annealed at 100°C for 30 minutes, and cooled to room temperature, where the perovskite bandgap is 1.7 eV.

[0171] (8) Spin-coated an electron transport layer [6,6]-phenyl C61 methyl butyrate (PCBM) to a perovskite layer at 1000 to 1500 rpm / s, annealed at 100°C for 10 minutes, and then spin-coated a passivation layer vasocuproin (BCP) at 5000 rpm / s.

[0172] (9) The product obtained in step (8) was placed in an evaporator, and the copper electrode was evaporated to 80 nm at a rate of 1 A / s to complete the manufacture of the stacked solar cell.

[0173] Other examples and comparative examples are basically the same as the manufacturing method of Example 1, and similar parts may be referred to in the description of the manufacturing method of Example 1 and are not described again here.

[0174] Table 1 Specific data of the examples and comparative examples

[0175] First light absorption layer Second light absorption layer Main material layer auxiliary material layer ingredient d1 / nm ingredient d2 / nm Example 1 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 1 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid 0.5 Example 2 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 1 2-(4-(diphenylamino)phenyl)acetic acid 0.5 Example 3 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 1 [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid 0.5 Example 4 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 1 Poly(3-hexylthiophene-2,5-diyl) 0.5 Example 5 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Aluminum-doped copper oxide 1 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid 0.5 Example 6 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Magnesium-doped copper oxide 1 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid 0.5 Example 7 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped tin oxide 1 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid 0.5 Example 8 silicon FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 1 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid 0.5 Example 9 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 1 ALD tin dioxide 0.5 Example 10 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 0.5 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid 0.5 Example 11 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 0.8 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid 0.5 Example 12 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 1.5 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid 0.5 Example 13 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 2 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid 0.5 Example 14 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 1 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid 0.8 Example 15 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 1 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid 1.5 Comparative Example 1 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 copper oxide 1 / / Comparative Example 2 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 copper 1 / / Comparative Example 3 FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 Indium-doped copper oxide 1 / /

[0176] Table 2 Test results of the examples and comparative examples

[0177] Jsc(mA·cm-2) Voc(V) FF(%) (PCE)(%) Example 1 16.07 1.903 78.12 23.89 Example 2 15.84 1.883 79.12 23.59 Example 3 15.79 1.901 77.83 23.36 Example 4 15.57 1.722 75.1 20.13 Example 5 15.89 1.831 76.91 22.37 Example 6 15.93 1.862 77 22.83 Example 7 16 1.803 78.11 22.53 Example 8 15.88 1.762 79.82 22.33 Example 9 15.32 1.783 78.12 21.33 Example 10 16.01 1.891 78.22 23.68 Example 11 16.03 1.899 78.2 23.80 Example 12 15.72 1.9 77.13 23.03 Example 13 15.02 1.899 74.32 21.19 Example 14 16.03 1.883 78.02 23.54 Example 15 16 1.853 77.93 23.10 Comparative Example 1 12.1 1.503 73.12 13.29 Comparative Example 2 11.2 1.104 60.32 7.45 Comparative Example 3 14.87 1.692 74.17 18.66

[0178] [Efficiency Test of Stacked Solar Cells]

[0179] Standard simulated solar power (AM 1.5G, 100mW / cm²) 2 Battery performance was tested under ) investigation, and an IV curve was obtained. Based on the IV curve and data fed back from the test instrument, the short-circuit current Jsc (unit: mA / cm²) 2 ), open-circuit voltage Voc (unit V), maximum optical output current Jmpp (unit mA), and maximum optical output voltage Vmpp (unit V) can be obtained. The battery fill factor FF was calculated in % using the formula FF = Jsc x Voc / (Jmp x Vmpp). The battery photoelectric conversion efficiency PCE was calculated in % using the formula PCE = Jsc x Voc x FF / Pin; Pin represents the input power of the incident light in mW.

[0180] [Testing of the main material layer]

[0181] The main material layer is manufactured using an evaporation device, and its thickness can be determined by the value displayed on the device. Additionally, the thickness of the main material layer can be tested using an ellipsometer, and the material within the main material layer is determined using X-ray photoelectron spectroscopy (XPS).

[0182] [Testing of auxiliary material layer]

[0183] The thickness of the auxiliary material layer is smaller, so the presence of the corresponding material in the auxiliary material layer can be determined through X-ray photoelectron spectroscopy (XPS), that is, the presence of the auxiliary material layer can be determined, and at the same time, the thickness can be measured using an ellipsometer.

[0184] By installing a main material layer and an auxiliary material layer in combination with Examples 1 to 15 and Comparative Examples 1 to 3, the stacked solar cell has a higher filling factor and efficiency. As shown in Examples 1 to 4 and Comparative Example 3, installing an auxiliary material layer and installing the auxiliary material layer as a P-type semiconductor material is advantageous for improving the efficiency of the stacked solar cell. As shown in Examples 1 to 3 and Example 4, selecting a compound having a specific structure as the material of the auxiliary material layer is advantageous for further improving the efficiency of the stacked solar cell. As shown in Examples 1 and 5 to 7, selecting a specific metal-doped metal oxide as the material of the main material layer can result in higher efficiency. As shown in Example 8, the light absorption layer of the stacked solar cell may be a light absorption layer excluding a perovskite absorption layer; that is, the installation of the examples of the present application can be applied to stacked solar cells having various different light absorption layer materials. As shown in Example 9, the stacked solar cell may be a stacked solar cell having an upright structure; in this case, the material of the auxiliary material layer may be tin dioxide manufactured by atomic deposition; as shown in Example 1, Example 1 is a stacked solar cell having an inverted structure, and a stacked solar cell having an inverted structure has higher efficiency. As shown in Examples 10 to 13, when the thickness of the main material layer in the stacked solar cell is 0.5 nm to 1.5 nm, it has higher efficiency. As shown in Examples 14 to 15, when the thickness of the auxiliary material layer is less than 1 nm, it has higher efficiency; additionally, when the thickness of the auxiliary material layer is 0.5 nm to 0.8 nm, it has higher efficiency.

[0185] It must be explained that the present application is not limited to the embodiments described above. The embodiments described above are merely examples, and any embodiments having substantially the same configuration as the technical concept and exhibiting the same functional effects within the scope of the technical solution of the present application are included within the technical scope of the present application. Furthermore, within the scope that does not depart from the spirit of the present application, various modifications conceivable by a person skilled in the art to the embodiments, and other methods constructed by combining some components of the embodiments, are also included within the scope of the present application. Explanation of the symbols

[0186] 2: Stacked solar cell; 21: First sub-cell; 22: Second sub-cell; 23: Tunneling structure; 231: Main material layer; 232: Auxiliary material layer; 211: First carrier transport layer; 212: First light absorption layer; 213: Second carrier transport layer; 221: Third carrier transport layer; 222: Second light absorption layer; 223: Fourth carrier transport layer; 24: First electrode layer; 25: Second electrode layer.

Claims

Claim 1 A stacked solar cell comprising a first subcell, a tunneling structure, and a second subcell arranged sequentially along a first direction, wherein the first direction is the direction of incidence of sunlight; wherein the first subcell comprises a first carrier transport layer, a first light absorption layer, and a second carrier transport layer arranged sequentially along the first direction; wherein the second subcell comprises a third carrier transport layer, a second light absorption layer, and a fourth carrier transport layer arranged sequentially along the first direction; wherein the tunneling structure comprises a main material layer and an auxiliary material layer, wherein the main material layer comprises a metal-doped metal oxide, and the auxiliary material layer comprises an N-type semiconductor material or a P-type semiconductor material, wherein the auxiliary material layer is located between the main material layer and the third carrier transport layer, and the main material layer is located between the second carrier transport layer and the auxiliary material layer; wherein the bandgap of the first light absorption layer is greater than the bandgap of the second light absorption layer. Claim 2 A stacked solar cell according to claim 1, wherein the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the third carrier transport layer is a hole transport layer, the fourth carrier transport layer is an electron transport layer, and the auxiliary material layer comprises a P-type semiconductor material. Claim 3 In claim 1, the P-type semiconductor material comprises at least one of compound (I) and compound (II), and Here, A is , , , Includes at least one of the following; R is -(CH2) n A stacked solar cell comprising -, where n is a natural number from 1 to 6; R1, R2, R3, and R4 each independently comprise at least one of -H, -CH3, -C2H5, -OCH3, -OC2H5, -X, -NH2, A, and X comprises a halogen element. Claim 4 A stacked solar cell according to claim 3, wherein the P-type semiconductor material comprises at least one of [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid, 2-(4-(diphenylamino)phenyl)acetic acid, and [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid. Claim 5 A stacked solar cell according to claim 1, wherein the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer, the third carrier transport layer is an electron transport layer, the fourth carrier transport layer is a hole transport layer, and the auxiliary material layer comprises an N-type semiconductor material. Claim 6 In paragraph 5, the N-type semiconductor material comprises tin dioxide, forming a stacked solar cell. Claim 7 A stacked solar cell according to any one of claims 1 to 6, wherein the thickness of the main material layer is 0.5 nm to 2 nm. Claim 8 A stacked solar cell according to claim 7, wherein the thickness of the main material layer is 0.5 nm to 1.5 nm. Claim 9 A stacked solar cell according to any one of claims 1 to 6, wherein the thickness of the auxiliary material layer is less than 1 nm. Claim 10 A stacked solar cell according to claim 9, wherein the thickness of the auxiliary material layer is 0.5 nm to 0.8 nm. Claim 11 A stacked solar cell according to any one of claims 1 to 6, wherein in the main material layer, the metal oxide comprises at least one of tin oxide, zinc oxide, and copper oxide, and the doped metal comprises at least one of aluminum, indium, and magnesium. Claim 12 A stacked solar cell according to claim 11, wherein the metal-doped metal oxide comprises at least one of indium-doped copper oxide, magnesium-doped copper oxide, and aluminum-doped copper oxide. Claim 13 A stacked solar cell according to any one of claims 1 to 6, wherein the first light-absorbing layer is a perovskite layer and the second light-absorbing layer is a perovskite layer. Claim 14 A stacked solar cell according to claim 13, wherein the chemical formula of the perovskite in the perovskite layer is ABX3 or A2CDX6, where A comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation, B comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation, C comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation, D comprises an organic cation, an inorganic cation, or an organic-inorganic mixed cation, and X comprises an organic anion, an inorganic anion, or an organic-inorganic mixed anion. Claim 15 A stacked solar cell according to any one of claims 1 to 6, wherein the stacked solar cell comprises a first electrode layer and a second electrode layer, wherein the first electrode layer, the first subcell, the tunneling structure, the second subcell, and the second electrode layer are sequentially arranged along the first direction, and the material of the first electrode layer comprises a transparent metal oxide. Claim 16 A stacked solar cell according to claim 2 or 5, wherein the material of the hole transport layer comprises a P-type semiconductor and the material of the electron transport layer comprises an N-type semiconductor. Claim 17 A method for manufacturing a stacked solar cell comprises the step of providing a first subcell, a tunneling structure, and a second subcell; wherein the first subcell comprises a first carrier transport layer, a first light absorption layer, and a second carrier transport layer arranged sequentially along a first direction, the first direction being the incident direction of sunlight; the second subcell comprises a third carrier transport layer, a second light absorption layer, and a fourth carrier transport layer arranged sequentially along the first direction; the tunneling structure comprises a main material layer and an auxiliary material layer, wherein the main material layer comprises a metal-doped metal oxide, the auxiliary material layer comprises an N-type semiconductor material or a P-type semiconductor material, the auxiliary material layer is located between the main material layer and the third carrier transport layer, and the main material layer is located between the second carrier transport layer and the auxiliary material layer; and the bandgap of the first light absorption layer is greater than the bandgap of the second light absorption layer. Claim 18 An electric device comprising a stacked solar cell according to any one of claims 1 to 6.

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