Light-emitting device and electronic device including same

Abstract

A light-emitting device is disclosed, comprising: a first electrode; a second electrode opposite to the first electrode; and an intermediate layer interposed between the first electrode and the second electrode and including a light-emitting layer, wherein the light-emitting layer includes quantum dots and a charge control layer is located between the first electrode and the light-emitting layer.

Description

Technology Field

[0001] This relates to a light-emitting element and an electronic device including the same. Background Technology

[0002] Quantum dots are nanocrystals of semiconductor materials that exhibit a quantum confinement effect. When a quantum dot receives light from an excitation source and reaches an energy-excited state, it emits energy corresponding to its own energy band gap. At this time, since the wavelength varies depending on the particle size even for the same material, light in a desired wavelength range can be obtained by controlling the size of the quantum dot. Because it can exhibit characteristics such as excellent color purity and high luminous efficiency, it can be applied to various devices.

[0003] In addition, quantum dots can be utilized as materials that perform various optical functions (e.g., photoconversion functions) among optical components. Quantum dots are nanoscale semiconductor nanocrystals, and by controlling the size and composition of the nanocrystals, they can have different energy bandgaps and, accordingly, emit light of various emission wavelengths.

[0004] Optical components containing such quantum dots can have a thin film form, for example, a thin film patterned for each subpixel. Such optical components can also be utilized as color conversion components in devices containing various light sources.

[0005] When an imbalance in charge injection from the hole injection layer and / or hole transport layer to the quantum dot light-emitting layer occurs, the pixel lifespan is reduced due to the degradation of the hole injection layer and / or hole transport layer composed of organic materials, and the lifespan of the light-emitting device containing it is also reduced, so improvement is required. The problem to be solved

[0006] The invention provides a light-emitting element having a simple structure that does not include a hole injection layer and a hole transport layer, and which has no degradation problem, as well as an electronic device including the same. means of solving the problem

[0007] According to one aspect,

[0008] First electrode;

[0009] A second electrode facing the first electrode;

[0010] An intermediate layer interposed between the first electrode and the second electrode and including a light-emitting layer; comprising

[0011] The above-mentioned light-emitting layer includes quantum dots, and

[0012] A light-emitting element is provided, wherein a charge control layer is located between the first electrode and the light-emitting layer.

[0013] According to one embodiment, the first electrode is an anode and the second electrode is a cathode, and

[0014] The above intermediate layer

[0015] It may further include an electron transport region comprising a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0016] According to one embodiment, the electron transport region is located between the second electrode and the light-emitting layer, and

[0017] It includes an electron transport layer and / or an electron injection layer,

[0018] The electron transport layer and / or electron injection layer may comprise inorganic, organic, or any combination thereof.

[0019] According to one embodiment, the electron transport layer and the electron injection layer are independently of each other, ZnMgO x , ZnO x , Cs2CO3, TiO x , WO x , SnO xIt may include , ZnS, BPhen(4,7-Diphenyl-1,10-phenanthroline), TPBi(2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole), Alq3, BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), or any combination thereof:

[0020] Here, each x independently represents a number from 0.1 to 3.

[0021] According to one embodiment, the charge control layer may include an inorganic insulating material, an organic insulating material, or any combination thereof.

[0022] According to one embodiment, the inorganic insulating material may include aluminum oxide; aluminum nitride; titanium nitride; alkali metal halide; silicon oxide; silicon nitride; silicon oxide nitride; hafnium oxide; zirconium oxide; or oxides of a combination of two or more of aluminum, silicon, hafnium and zirconium.

[0023] According to one embodiment, the inorganic insulating material is Al2O3, SiO2 x , SiN x , SiO x N y , HfO2, ZrO2, HfSiO4, HfAlO, AlN x , TiN x It may include , LiF, or any combination thereof:

[0024] Here, x represents a number from 0.1 to 3, and y represents a number from 0.1 to 3.

[0025] According to one embodiment, the organic insulating material may include PMMA (Poly(methyl methacrylate)), PVA (polyvinyl alcohol), or any combination thereof.

[0026] According to one embodiment, the first electrode is an anode and the second electrode is a cathode, and

[0027] The thickness of the charge control layer may be greater than 0 nm and less than or equal to 5 nm.

[0028] According to one embodiment, the first electrode and / or the second electrode may be a transparent electrode.

[0029] According to one embodiment, the transparent electrode may have a single-layer structure or a multi-layer structure comprising a metal oxide or a metal.

[0030] According to one embodiment, the metal oxide is indium tin oxide (ITO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), and molybdenum oxide (MoO₂). x ), vanadium oxide (VO x ), nickel oxide (NiO x It may include ), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof:

[0031] Here, each x independently represents a number from 0.1 to 3.

[0032] According to one embodiment, the metal may include magnesium (Mg), silver (Ag), gold (Au), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0033] According to one embodiment, the quantum point

[0034] A core including a semiconductor compound; and

[0035] A shell comprising an oxide of a metal, metalloid or nonmetal, a semiconductor compound, or a combination thereof; comprising

[0036] It can have a core-shell structure.

[0037] According to one embodiment, the semiconductor compound may include a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; a group IV element or compound; or any combination thereof.

[0038] The oxides of the metal, metalloid, or nonmetal may independently include SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, or any combination thereof.

[0039] CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InZnP, InGaZnP, InAlZnP GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS 3It may include InGaSe3, AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS, AgInGaS2, CuInGaS2, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, Si, Ge, SiC, SiGe, or any combination thereof.

[0040] According to one embodiment, the semiconductor compound included in the shell may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0041] According to another aspect, an electronic device including the light-emitting element is provided.

[0042] According to one embodiment, the electronic device may further include a display module, a processor, a memory, and a power module.

[0043] According to one embodiment, the electronic device may include one of a smartphone, tablet PC, laptop, TV, desk monitor, smart glasses, head-mounted display, smart watch, instrument panel of a car, center fascia, Center Information Display (CID) placed on the dashboard of a car, or room mirror display. Effects of the invention

[0044] The light-emitting element according to one embodiment has an excellent lifespan. Brief explanation of the drawing

[0045] FIG. 1 is a diagram schematically showing the structure of a light-emitting element according to one embodiment of the present invention. FIG. 2 is a cross-sectional view of an electronic device according to one embodiment of the present invention. FIG. 3 is a cross-sectional view of an electronic device according to another embodiment of the present invention. FIG. 4 is a block diagram of an electronic device according to one embodiment of the present invention. FIG. 5 is a schematic diagram of an electronic device according to various embodiments of the present invention. Specific details for implementing the invention

[0046] The present invention is capable of various modifications and may have various embodiments; specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various forms.

[0047] In the following examples, singular expressions include plural expressions unless the context clearly indicates otherwise.

[0048] In the following embodiments, terms such as "include" or "have" mean that the features or components described in the specification are present, and do not preclude the possibility that one or more other features or components may be added.

[0049] In the following embodiments, when a part such as a film, region, or component is described as being on or above another part, it includes not only cases where it is directly on top of another part, but also cases where another film, region, or component is interposed in between.

[0050] When describing with reference to the drawings, identical or corresponding components are assigned the same reference numerals, and redundant descriptions thereof are omitted.

[0051] In the drawings, the size of components may be exaggerated or reduced for convenience of explanation. For example, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, so the present invention is not necessarily limited to what is illustrated.

[0053] A light-emitting element according to one aspect

[0054] First electrode;

[0055] A second electrode facing the first electrode;

[0056] An intermediate layer interposed between the first electrode and the second electrode and including a light-emitting layer; comprising

[0057] The above-mentioned light-emitting layer includes quantum dots, and

[0058] A charge control layer may be located between the first electrode and the light-emitting layer.

[0059] A light-emitting device according to one embodiment may not include a hole injection layer and a hole transport layer. Therefore, there is no reduction in lifespan due to degradation of the hole injection layer or the hole transport layer composed of an organic material. For example, a light-emitting device according to one embodiment may be a quantum dot light-emitting device with a Schottky diode structure that does not include a hole injection layer and a hole transport layer.

[0060] According to one embodiment, the charge control layer may be a layer comprising an insulating material. For example, the charge control layer may be a layer consisting of an insulating material.

[0061] According to one embodiment, the first electrode is an anode and the second electrode is a cathode, and the intermediate layer may further include an electron transport region comprising a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0062] According to one embodiment, the electron transport region is located between the second electrode and the light-emitting layer and includes an electron transport layer and / or an electron injection layer, and

[0063] The electron transport layer and / or electron injection layer may comprise inorganic, organic, or any combination thereof.

[0064] According to one embodiment, an electron transport layer is located between the second electrode and the light-emitting layer, and the electron transport layer may include an inorganic material. For example, the electron transport layer may consist of an inorganic material.

[0065] According to one embodiment, the electron transport layer and the electron injection layer are independently ZnMgO x , ZnO x , Cs2CO3, TiO x , WO x , SnO x It may include , ZnS, BPhen(4,7-Diphenyl-1,10-phenanthroline), TPBi(2,2'.2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole), Alq3, BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), or any combination thereof. Here, each x may independently represent a number from 0.1 to 3. For example, each x may independently represent a number from 0.5 to 3.0. For example, each x may independently represent a number from 0.7 to 2.5.

[0066] According to one embodiment, the charge control layer may include an inorganic insulating material, an organic insulating material, or any combination thereof. For example, the charge control layer may consist of an inorganic insulating material, an organic insulating material, or any combination thereof.

[0067] According to one embodiment, the inorganic insulating material may include aluminum oxide; aluminum nitride; titanium nitride; alkali metal halide; silicon oxide; silicon nitride; silicon oxide nitride; hafnium oxide; zirconium oxide; or oxides of a combination of two or more of aluminum, silicon, hafnium and zirconium.

[0068] According to one embodiment, the inorganic insulating material is Al2O3, SiO2 x , SiN x , SiO x N y , HfO2, ZrO2, HfSiO4, HfAlO, AlN x , TiN x It may include , LiF, or any combination thereof.

[0069] Here, each x can independently represent a number from 0.1 to 3, and y can represent a number from 0.1 to 3. For example, each x can independently represent a number from 0.5 to 3.0, and y can independently represent a number from 0.5 to 3.0. For example, each x can independently represent a number from 0.7 to 2.5, and y can independently represent a number from 0.7 to 2.5.

[0070] According to one embodiment, the organic insulating material may include PMMA (Poly(methyl methacrylate)), PVA (polyvinyl alcohol), or any combination thereof.

[0071] According to one embodiment, the layer may be composed of an insulating material. Since the layer is composed of an insulating material, current may not flow under normal circumstances. The layer can block exciton quenching that may occur when the light-emitting layer and the electrode come into contact.

[0072] According to one embodiment, the first electrode is an anode and the second electrode is a cathode, and the thickness of the charge control layer may be greater than 0 nm and less than or equal to 5 nm. When the thickness is within the above range, hole tunneling may be possible. When the thickness exceeds 5 nm, the driving voltage may be increased.

[0073] According to one embodiment, the first electrode and / or the second electrode may be a transparent electrode. For example, the light-emitting element according to one embodiment of the present invention may be a front light-emitting element or a back light-emitting element.

[0074] According to one embodiment, the transparent electrode may have a single-layer structure or a multi-layer structure comprising a metal oxide or a metal.

[0075] According to one embodiment, the metal oxide is indium tin oxide (ITO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), and molybdenum oxide (MoO₂). x ), vanadium oxide (VO x ), nickel oxide (NiO x It may include ), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. Here, each x independently represents a number from 0.1 to 3. For example, each x can be a number from 0.5 to 3.0 independently of each other. For example, each x can be a number from 0.7 to 2.5 independently of each other.

[0076] According to one embodiment, the metal may include magnesium (Mg), silver (Ag), gold (Au), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0077] For example, the above-mentioned transmissive electrode may have a structure of a first transmissive electrode / semi-transmissive electrode / second transmissive electrode. In this case, efficiency may be increased due to the resonance effect. For example, based on the red quantum dot emission wavelength, the above-mentioned transmissive electrode may have a structure of ITO (45 nm) / Ag (25 nm) / ITO (65 nm), in which case the light emission efficiency may be increased by ~60% compared to an ITO single-layer structure, and the light extraction efficiency may be increased from 25% to 40%. In the above structure, the ITO (65 nm) layer may be in direct contact with the charge control layer.

[0078] The above quantum dots will be described later.

[0079] [Explanation of Fig. 1]

[0080] FIG. 1 schematically illustrates a cross-sectional view of a light-emitting element (100) according to one embodiment of the present invention. The light-emitting element (100) includes a first electrode (110), an intermediate layer (130), and a second electrode (150).

[0081] Hereinafter, the structure and manufacturing method of a light-emitting element (100) according to one embodiment of the present invention will be described with reference to FIG. 1.

[0082] [First electrode (110)]

[0083] A substrate may be additionally disposed on the lower part of the first electrode (110) of FIG. 1 or on the upper part of the second electrode (150). As the substrate, a glass substrate or a plastic substrate may be used. Alternatively, the substrate may be a flexible substrate and may include a plastic with excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphtalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0084] The first electrode (110) can be formed, for example, by providing a material for the first electrode on the substrate using a deposition method or a sputtering method. When the first electrode (110) is an anode, a material with a high work function that facilitates hole injection can be used as the material for the first electrode.

[0085] The first electrode (110) may be a reflective electrode, a semi-transparent electrode, or a transparent electrode. To form the first electrode (110) which is a transparent electrode, the first electrode material may be indium tin oxide (ITO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), or molybdenum oxide (MoO₂). x ), vanadium oxide (VO x ), nickel oxide (NiO x), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof may be used. Here, each x independently represents a number from 0.1 to 3. Alternatively, to form a first electrode (110) which is a semi-transparent electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof may be used as a material for the first electrode.

[0086] The first electrode (110) may have a single-layer structure consisting of a single layer or a multi-layer structure including multiple layers. For example, the first electrode (110) may have a three-layer structure of ITO / Ag / ITO.

[0087] [Middle layer (130)]

[0088] An intermediate layer (130) is disposed on the upper portion of the first electrode (110). The intermediate layer (130) includes a light-emitting layer.

[0089] The intermediate layer (130) includes the charge control layer disposed between the first electrode (110) and the light-emitting layer. The intermediate layer (130) may not include a hole injection layer, a hole transport layer, a light-emitting auxiliary layer, or an electron blocking layer.

[0090] The above intermediate layer (130) may further include an electron transport region disposed between the light-emitting layer and the second electrode (150).

[0091] The above intermediate layer (130) may further include, in addition to various organic materials, metal-containing compounds such as organometallic compounds, inorganic materials such as quantum dots, etc.

[0092] Meanwhile, the intermediate layer (130) may include i) two or more emitting units sequentially stacked between the first electrode (110) and the second electrode (150), and ii) a charge generation layer disposed between the two emitting units. If the intermediate layer (130) includes the emitting units and charge generation layer as described above, the emitting element (100) may be a tandem emitting element.

[0093] [Emitting layer in the middle layer (130)]

[0094] When the light-emitting element (100) is a full-color light-emitting element, the light-emitting layer may be patterned into a red light-emitting layer, a green light-emitting layer, and / or a blue light-emitting layer for each individual subpixel. Alternatively, the light-emitting layer may have a structure in which two or more layers among the red light-emitting layer, the green light-emitting layer, and the blue light-emitting layer are stacked in contact or spaced apart, or may have a structure in which two or more materials among the red light-emitting material, the green light-emitting material, and the blue light-emitting material are mixed without layer separation, thereby emitting white light.

[0095] The thickness of the light-emitting layer may be about 100 Å to about 1000 Å, for example, about 200 Å to about 600 Å. When the thickness of the light-emitting layer satisfies the range described above, excellent light-emitting characteristics can be exhibited without a substantial increase in driving voltage.

[0096] [Quantum Dot]

[0097] The above-mentioned light-emitting layer may include quantum dots.

[0098] In this specification, a quantum dot refers to a crystal of a semiconductor compound and may include any material capable of emitting light of various emission wavelengths depending on the size of the crystal. The quantum dot may also emit light of various emission wavelengths by controlling the elemental ratio within the quantum dot compound.

[0099] The diameter of the above quantum dots may be, for example, about 1 nm to 10 nm.

[0100] The above quantum dots can be synthesized by a wet chemical process, an organometallic chemical vapor deposition process, a molecular beam epitaxy process, or a similar process.

[0101] The above wet chemical process is a method of growing quantum dot particle crystals after mixing an organic solvent and a precursor material. When the crystals grow, the organic solvent naturally acts as a dispersant coordinated to the surface of the quantum dot crystals and controls the growth of the crystals. Therefore, the growth of quantum dot particles can be controlled through a process that is easier and lower cost than vapor deposition methods such as Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).

[0102] The above quantum dots may include a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; a group IV element or compound; or any combination thereof.

[0103] Examples of the above-mentioned group II-VI semiconductor compounds include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.; It may include four-element compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.; or any combination thereof.

[0104] Examples of the above III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, etc.; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.; or any combination thereof. Meanwhile, the above III-V semiconductor compounds may further include a group II element. Examples of III-V semiconductor compounds containing additional group II elements may include InZnP, InGaZnP, InAlZnP, etc.

[0105] Examples of the above-mentioned group III-VI semiconductor compounds include binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, etc.; InGaS 3 It may include ternary compounds such as InGaSe3, etc.; or any combination thereof.

[0106] Examples of the above-mentioned group I-III-VI semiconductor compounds may include ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, etc.; or any combination such as AgInGaS, AgInGaS2, CuInGaS2.

[0107] Examples of the above-mentioned group IV-VI semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.; quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, etc.; or any combination thereof.

[0108] The above Group IV elements or compounds may include single-element compounds such as Si, Ge, etc.; dual-element compounds such as SiC, SiGe, etc.; or any combination thereof.

[0109] Each element included in the multi-element compounds, such as the above-mentioned binary compounds, ternary compounds, and quaternary compounds, may exist within the particle at a uniform or non-uniform concentration.

[0110] Meanwhile, the above quantum dot may have a single structure in which the concentration of each element contained in the quantum dot is uniform, or a core-shell dual structure. For example, the material contained in the core and the material contained in the shell may be different from each other.

[0111] The shell of the quantum dot can serve as a protective layer to maintain semiconductor properties by preventing chemical degradation of the core, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or a multilayer. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center.

[0112] Examples of the shell of the above quantum dot include oxides of metals, metalloids, or nonmetals, semiconductor compounds, or combinations thereof. Examples of the oxides of metals, metalloids, or nonmetals may include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, etc.; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, etc.; or any combination thereof. Examples of the above semiconductor compounds may include group II-VI semiconductor compounds; group III-V semiconductor compounds; group III-VI semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; or any combination thereof, as described in this specification. For example, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0113] Quantum dots can have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, specifically about 40 nm or less, and more specifically about 30 nm or less, and color purity or color reproducibility can be improved in this range. In addition, since the light emitted through these quantum dots is emitted in all directions, the wide viewing angle can be improved.

[0114] In addition, the shape of the quantum dots can specifically be spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplate-like particles, etc.

[0115] By controlling the size of the quantum dots, the energy band gap can be controlled, allowing light of various wavelengths to be obtained from the quantum dot light-emitting layer. Therefore, by using quantum dots of different sizes, a light-emitting device that emits light of various wavelengths can be realized. Specifically, the size of the quantum dots can be selected to emit red, green, and / or blue light. Additionally, the size of the quantum dots can be configured to emit white light by combining light of various colors.

[0116] [Electronic transport region in the middle layer (130)]

[0117] The electron transport region may have i) a single-layer structure consisting of a single layer made of a single material, ii) a single-layer structure consisting of a plurality of different materials, or iii) a multilayer structure including a plurality of layers containing a plurality of different materials.

[0118] The above electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0119] For example, the electron transport region may have a structure such as an electron transport layer / electron injection layer or a hole blocking layer / electron transport layer / electron injection layer stacked sequentially from the light-emitting layer.

[0120] The electron transport region (e.g., a hole blocking layer or electron transport layer among the electron transport regions) comprises at least one π electron-deficient nitrogen-containing C1-C 60 cyclic group (π electron-deficient nitrogen-containing C1-C 60 It may include metal-free compounds containing a cyclic group.

[0121] For example, the electron transport region may include a compound represented by the following chemical formula 601.

[0122] <Chemical Formula 601>

[0123] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21

[0124] Among the above chemical formula 601,

[0125] Ar 601 , and L 601 are independent of each other, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group or at least one R 10a C1-C substituted or unsubstituted 60 It is a heterocyclic group, and

[0126] xe11 is 1, 2, or 3, and

[0127] xe1 is 0, 1, 2, 3, 4, or 5, and

[0128] R 601 is, at least one R 10a C3-C substituted or unsubstituted 60Carbocyclic group, at least one R 10a C1-C substituted or unsubstituted 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 ), -C(=O)(Q 601 ), -S(=O)2(Q 601 ), or -P(=O)(Q 601 )(Q 602 ) and,

[0129] Above Q 601 to Q 603 For descriptions regarding each, refer to the description of Q1 in this specification, and

[0130] xe21 is 1, 2, 3, 4, or 5, and

[0131] The above

[0132] Ar 601 , L 601 and R 601 At least one of them is independent of each other, at least one R 10a π electron-deficient nitrogenous C1-C substituted or unsubstituted 60 It could be a click group.

[0133] For example, if xe11 in the above chemical formula 601 is 2 or more, then 2 or more Ar 601 They can be connected to each other through a single bond.

[0134] As another example, Ar in the above chemical formula 601 601 It may be a substituted or unsubstituted anthracene group.

[0135] As another example, the electron transport region may include a compound represented by the following chemical formula 601-1:

[0136] <Chemical Formula 601-1>

[0137]

[0138] In the above chemical formula 601-1,

[0139] X 614is N or C(R 614 ) and, X 615 is N or C(R 615 ) and, X 616 is N or C(R 616 ) and, X 614 To X 616 At least one of them is N, and

[0140] L 611 to L 613 The explanation for each of the above L 601 Refer to the explanation for,

[0141] For descriptions of xe611 to xe613, refer to the description of xe1 above, and

[0142] R 611 to R 613 The explanation for each of the above R 601 Refer to the explanation for,

[0143] R 614 to R 616 They are independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 20 Alkyl group, C1-C 20 Alkoxy group, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group, or at least one R 10a C1-C substituted or unsubstituted 60 It can be a heterocyclic group.

[0144] For example, xe1 and xe611 to xe613 in the above chemical formulas 601 and 601-1 may be 0, 1, or 2 independently of each other.

[0145] The electron transport region may comprise one of the following compounds ET1 to ET45, BCP (2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), TPBi (2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)), Bphen (4,7-Diphenyl-1,10-phenanthroline), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:

[0146]

[0147]

[0148]

[0149]

[0150]

[0151]

[0152]

[0153] The thickness of the electron transport region may be about 100 Å to about 5000 Å, for example, about 160 Å to about 4000 Å. If the electron transport region includes a hole blocking layer, an electron transport layer, or any combination thereof, the thickness of the hole blocking layer or the electron transport layer may be, independently of each other, about 20 Å to about 1000 Å, for example, about 30 Å to about 300 Å. The thickness of the electron transport layer may be about 100 Å to about 1000 Å, for example, about 150 Å to about 500 Å. If the thickness of the hole blocking layer and / or the electron transport layer satisfies the ranges described above, satisfactory electron transport characteristics can be obtained without a substantial increase in driving voltage.

[0154] The above electron transport region (e.g., the electron transport layer among the electron transport regions) may further include a metal-containing material in addition to the material described above.

[0155] For example, the electron transport layer is ZnMgO x , ZnO x , Cs2CO3, TiO x , WO x , SnO x It may include , ZnS, or any combination thereof. Here, each x independently represents a number from 0.1 to 3.

[0156] The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The metal ions of the alkali metal complex may be Li ions, Na ions, K ions, Rb ions, or Cs ions, and the metal ions of the alkaline earth metal complex may be Be ions, Mg ions, Ca ions, Sr ions, or Ba ions. The ligands coordinated to the metal ions of the alkali metal complex and the alkaline earth metal complex may independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0157] For example, the metal-containing material may include a Li complex. The Li complex may include, for example, the following compounds ET-D1 (LiQ) or ET-D2:

[0158]

[0159] The above electron transport region may include an electron injection layer that facilitates electron injection from the second electrode (150). The electron injection layer may be in direct contact with the second electrode (150).

[0160] The electron injection layer may have i) a single-layer structure consisting of a single layer made of a single material, ii) a single-layer structure consisting of a plurality of different materials, or iii) a multilayer structure having a plurality of layers containing a plurality of different materials.

[0161] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0162] The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0163] The alkali metal-containing compound, alkaline earth metal-containing compound and the rare earth metal-containing compound may include oxides, halides (e.g., fluorides, chlorides, bromides, iodides, etc.), tellurides, or any combination thereof of the alkali metal, alkaline earth metal, and rare earth metal, respectively.

[0164] The above alkali metal-containing compound may include alkali metal oxides such as Li2O, Cs2O, K2O, etc., alkali metal halides such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, etc., or any combination thereof. The above alkaline earth metal-containing compound may include BaO, SrO, CaO, Ba x Sr 1-x O(x is 0 <x<1를 만족하는 실수임), Ba x Ca 1-x O(x is 0 <x<1를 만족하는 실수임) 등과 같은 알칼리 토금속 화합물을 포함할 수 있다. 상기 희토류 금속-함유 화합물은, YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, 또는 이의 임의의 조함을 포함할 수 있다. 또는, 상기 희토류 금속-함유 화합물은, 란타나이드 금속 텔루라이드를 포함할 수 있다. 상기 란타나이드 금속 텔루라이드의 예는, LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, Lu2Te3등을 포함할 수 있다.

[0165] The above alkali metal complex, alkaline earth metal complex, and rare earth metal complex may comprise i) one of the ions of the alkali metal, alkaline earth metal, and rare earth metal as described above, and ii) a ligand bound to the metal ion, for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0166] The electron injection layer described above may consist only of alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof, or may further include organic materials (e.g., compounds represented by the chemical formula 601).

[0167] According to one embodiment, the electron injection layer may be composed of i) an alkali metal-containing compound (e.g., an alkali metal halide), or ii) a) an alkali metal-containing compound (e.g., an alkali metal halide); and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposited layer, an RbI:Yb co-deposited layer, etc.

[0168] If the electron injection layer further comprises an organic material, the alkali metal, alkaline earth metal, rare earth metal, alkali metal-containing compound, alkaline earth metal-containing compound, rare earth metal-containing compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex, or any combination thereof may be uniformly or non-uniformly dispersed in a matrix containing the organic material.

[0169] The thickness of the electron injection layer may be about 1 Å to about 100 Å or about 3 Å to about 90 Å. When the thickness of the electron injection layer satisfies the range described above, satisfactory electron injection characteristics can be obtained without a substantial increase in driving voltage.

[0170] [Second electrode (150)]

[0171] A second electrode (150) is disposed on the upper portion of the intermediate layer (130) as described above. The second electrode (150) may be a cathode, which is an electron injection electrode. In this case, a metal, alloy, electrically conductive compound, or any combination thereof having a low work function may be used as the material for the second electrode (150).

[0172] The second electrode (150) may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode (150) may be a transmissive electrode, a semitransmissive electrode, or a reflective electrode.

[0173] The second electrode (150) may have a single-layer structure or a multi-layer structure having multiple layers.

[0174] [Capping layer]

[0175] A first capping layer may be disposed on the outer side of the first electrode (110), and / or a second capping layer may be disposed on the outer side of the second electrode (150). Specifically, the light-emitting element (100) may have a structure in which the first capping layer, the first electrode (110), the intermediate layer (130), and the second electrode (150) are stacked in order, a structure in which the first electrode (110), the intermediate layer (130), the second electrode (150), and the second capping layer are stacked in order, or a structure in which the first capping layer, the first electrode (110), the intermediate layer (130), the second electrode (150), and the second capping layer are stacked in order.

[0176] Light generated in the light-emitting layer of the intermediate layer (130) of the light-emitting element (100) can be emitted to the outside through the first electrode (110), which is a semi-transparent electrode or a transparent electrode, and the first capping layer, and light generated in the light-emitting layer of the intermediate layer (130) of the light-emitting element (100) can be emitted to the outside through the second electrode (150), which is a semi-transparent electrode or a transparent electrode, and the second capping layer.

[0177] The first capping layer and the second capping layer can serve to improve external light emission efficiency based on the principle of constructive interference. As a result, the light extraction efficiency of the light-emitting element (100) is increased, and the light emission efficiency of the light-emitting element (100) can be improved.

[0178] Each of the above first capping layer and second capping layer may include a material having a refractive index of 1.6 or higher (at 589 nm).

[0179] The first capping layer and the second capping layer may independently be an organic capping layer containing organic material, an inorganic capping layer containing inorganic material, or an organic-inorganic composite capping layer containing organic material and inorganic material.

[0180] At least one of the first capping layer and the second capping layer may independently comprise a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, porphine derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may optionally be substituted with a substituent comprising O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. According to one embodiment, at least one of the first capping layer and the second capping layer may independently comprise an amine group-containing compound.

[0181] For example, at least one of the first capping layer and the second capping layer may independently include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof.

[0182] According to another embodiment, at least one of the first capping layer and the second capping layer may independently comprise one of the following compounds CP1 to CP6, β-NPB, or any of the same:

[0183]

[0184]

[0185] [Electronic device]

[0186] The above-mentioned light-emitting element may be included in various electronic devices. For example, an electronic device including the above-mentioned light-emitting element may be a light-emitting device, an authentication device, etc.

[0187] The electronic device (e.g., a light-emitting device) may further include, in addition to the light-emitting element, i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and / or color conversion layer may be disposed in at least one direction of propagation of light emitted from the light-emitting element. For example, the light emitted from the light-emitting element may be blue light or white light. Refer to the description of the light-emitting element above.

[0188] The electronic device may include a first substrate. The first substrate may include a plurality of subpixel regions, the color filter may include a plurality of color filter regions corresponding to each of the plurality of subpixel regions, and the color conversion layer may include a plurality of color conversion regions corresponding to each of the plurality of subpixel regions.

[0189] A pixel defining film is placed between the above plurality of subpixel regions to define each subpixel region.

[0190] The above color filter may further include a plurality of color filter regions and a light-blocking pattern disposed between the plurality of color filter regions, and the color conversion layer may further include a plurality of color conversion regions and a light-blocking pattern disposed between the plurality of color conversion regions.

[0191] The plurality of color filter regions (or plurality of color conversion regions) comprises a first region emitting a first color light; a second region emitting a second color light; and / or a third region emitting a third color light, wherein the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. For example, the plurality of color filter regions (or plurality of color conversion regions) may include quantum dots. Specifically, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. Refer to the description of quantum dots as provided in this specification. The first region, the second region, and / or the third region may each further include scatterers.

[0192] The above regions containing quantum dots can be formed using a composition containing a quantum dot-containing complex according to one embodiment of the present invention.

[0193] For example, the light-emitting element may emit a first light, the first region may absorb the first light to emit a first-1 color light, the second region may absorb the first light to emit a second-1 color light, and the third region may absorb the first light to emit a third-1 color light. In this case, the first-1 color light, the second-1 color light, and the third-1 color light may have different maximum emission wavelengths. Specifically, the first light may be blue light, the first-1 color light may be red light, the second-1 color light may be green light, and the third-1 color light may be blue light.

[0194] The above electronic device may further include a thin-film transistor in addition to the light-emitting element described above. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, and either one of the source electrode and the drain electrode may be electrically connected to either one of the first electrode and the second electrode of the light-emitting element.

[0195] The above thin-film transistor may further include a gate electrode, a gate insulating film, etc.

[0196] The above active layer may include crystalline silicon, amorphous silicon, organic semiconductor, oxide semiconductor, etc.

[0197] The electronic device may further include a sealing portion for sealing a light-emitting element. The sealing portion may be disposed between the color filter and / or color conversion layer and the light-emitting element. The sealing portion allows light from the light-emitting element to be emitted to the outside while simultaneously blocking external air and moisture from penetrating the light-emitting element. The sealing portion may be a sealing substrate comprising a transparent glass substrate or a plastic substrate. The sealing portion may be a thin film encapsulation layer comprising one or more organic and / or inorganic layers. If the sealing portion is a thin film encapsulation layer, the electronic device may be flexible.

[0198] On the sealing portion, in addition to the color filter and / or color conversion layer, various functional layers may be additionally disposed depending on the application of the electronic device. Examples of the functional layers may include a touchscreen layer, a polarizing layer, etc. The touchscreen layer may be a pressure-sensitive touchscreen layer, a capacitive touchscreen layer, or an infrared touchscreen layer.

[0199] The above authentication device may be a biometric authentication device that authenticates an individual using biometric information (e.g., fingertip, pupil, etc.).

[0200] The authentication device described above may further include means for collecting biometric information in addition to the light-emitting element described above.

[0201] The above electronic device can be applied to various displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, electronic game consoles, medical devices (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram display devices, ultrasound diagnostic devices, endoscope display devices), fish finders, various measuring instruments, instruments (e.g., instruments for vehicles, aircraft, and ships), projectors, etc.

[0202] [Electronic devices]

[0203] The above-mentioned light-emitting element may be included in various electronic devices.

[0204] For example, the electronic device including the light-emitting element may be one of a flat panel display, a curved display, a computer monitor, a medical monitor, a television, an advertising board, a light for indoor or outdoor lighting and / or signaling, a head-up display, a fully or partially transparent display, a flexible display, a rollable display, a foldable display, a stretchable display, a laser printer, a telephone, a mobile phone, a tablet, a phablet, a personal information terminal (PDA), a wearable device, a laptop computer, a digital camera, a camcorder, a viewfinder, a microdisplay, a 3D display, a virtual reality or augmented reality display, a vehicle, a video wall including multiple displays tiled together, a theater or stadium screen, a light therapy device, and a signboard.

[0205] Since the light-emitting element has excellent luminous efficiency and a long lifespan, the electronic device including the light-emitting element can have characteristics such as high brightness, high resolution, and low power consumption.

[0206] [Explanation of Figures 2 and 3]

[0207] FIG. 2 is a cross-sectional view of an electronic device (180) according to one embodiment of the present invention.

[0208] The electronic device (180) of FIG. 2 includes a substrate (100), a thin-film transistor (TFT), a light-emitting element, and a sealing portion (300) that seals the light-emitting element.

[0209] The substrate (100) may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer (210) may be disposed on the substrate (100). The buffer layer (210) may prevent the penetration of impurities through the substrate (100) and may serve to provide a flat surface on the upper surface of the substrate (100).

[0210] A thin-film transistor (TFT) may be disposed on the buffer layer (210). The thin-film transistor (TFT) may include an active layer (220), a gate electrode (240), a source electrode (260), and a drain electrode (270).

[0211] The active layer (220) may include an inorganic semiconductor, an organic semiconductor, or an oxide semiconductor such as silicon or polysilicon, and includes a source region, a drain region, and a channel region.

[0212] A gate insulating film (230) for insulating the active layer (220) and the gate electrode (240) may be disposed on the upper part of the active layer (220), and a gate electrode (240) may be disposed on the upper part of the gate insulating film (230).

[0213] An interlayer insulating film (250) may be disposed on the upper portion of the gate electrode (240). The interlayer insulating film (250) is disposed between the gate electrode (240) and the source electrode (260) and between the gate electrode (240) and the drain electrode (270) to insulate them.

[0214] A source electrode (260) and a drain electrode (270) may be disposed on the interlayer insulating film (250). The interlayer insulating film (250) and the gate insulating film (230) may be formed so as to expose the source region and the drain region of the active layer (220), and the source electrode (260) and the drain electrode (270) may be disposed to be in contact with the exposed source region and the drain region of the active layer (220).

[0215] Such a thin-film transistor (TFT) can be electrically connected to a light-emitting element to drive the light-emitting element and is covered and protected by a passivation layer (280). The passivation layer (280) may include an inorganic insulating film, an organic insulating film, or a combination thereof. A light-emitting element is provided on the passivation layer (280). The light-emitting element includes a first electrode (110), an intermediate layer (130), and a second electrode (150).

[0216] The first electrode (110) may be disposed on the passivation layer (280). The passivation layer (280) may be disposed so as to expose a certain area without covering the entire drain electrode (270), and the first electrode (110) may be disposed to be connected to the exposed drain electrode (270).

[0217] A pixel defining film (290) including an insulating material may be disposed on the first electrode (110). The pixel defining film (290) exposes a predetermined area of ​​the first electrode (110), and an intermediate layer (130) may be formed in the exposed area. The pixel defining film (290) may be a polyimide or polyacrylic-based organic film. Although not shown in FIG. 2, some or more layers of the intermediate layer (130) may extend to the upper part of the pixel defining film (290) and be disposed in the form of a common layer.

[0218] A second electrode (150) is disposed on the intermediate layer (130), and a capping layer (170) may be additionally formed on the second electrode (150). The capping layer (170) may be formed to cover the second electrode (150).

[0219] A sealing portion (300) may be disposed on the capping layer (170). The sealing portion (300) may be disposed on a light-emitting element and serve to protect the light-emitting element from moisture or oxygen. The sealing portion (300) may include an inorganic film comprising silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or any combination thereof; an organic film comprising polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), an epoxy resin (e.g., AGE (aliphatic glycidyl ether), etc.) or any combination thereof; or a combination of an inorganic film and an organic film.

[0220] FIG. 3 is a cross-sectional view of an electronic device (190) according to another embodiment of the present invention.

[0221] The electronic device (190) of FIG. 3 is the same electronic device as FIG. 2, except that a light-blocking pattern (500) and a functional area (400) are additionally disposed on the upper part of the encapsulation portion (300). The functional area (400) may be i) a color filter area, ii) a color conversion area, or iii) a combination of a color filter area and a color conversion area. According to one embodiment, the light-emitting element included in the electronic device of FIG. 4 may be a tandem light-emitting element.

[0222] [Explanation of Fig. 4]

[0223] The light-emitting element according to the embodiment can be applied to various electronic devices. An electronic device according to one embodiment includes the light-emitting element described above and may further include a module or device having other additional functions in addition to the light-emitting element.

[0224] FIG. 4 is a block diagram of an electronic device according to one embodiment. Referring to FIG. 4, an electronic device (10) according to one embodiment may include a display module (11), a processor (12), a memory (13), and a power module (14).

[0225] The processor (12) may include at least one of a central processing unit (CPU), an application processor (AP), a graphic processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0226] The memory (13) may store data information necessary for the operation of the processor (12) or the display module (11). When the processor (12) executes an application stored in the memory (13), an image data signal and / or an input control signal are transmitted to the display module (11), and the display module (11) can process the received signal and output image information through a display screen.

[0227] The power module (14) may include a power supply module, such as a power adapter or battery device, and a power conversion module that converts the power supplied by the power supply module to generate power required for the operation of the electronic device (10).

[0228] At least one of each component of the electronic device (10) described above may be included within a light-emitting element according to the embodiments described above. Additionally, some of the individual modules functionally included within a single module may be included within the light-emitting element, while others may be provided separately from the light-emitting element. For example, the light-emitting element may include a display module (11), and the processor (12), memory (13), and power module (14) may be provided in the form of other devices within the electronic device (10) that are not light-emitting elements.

[0229] [Explanation of Fig. 5]

[0230] FIG. 5 is a schematic diagram of an electronic device according to various embodiments.

[0231] Referring to FIG. 5, various electronic devices to which light-emitting elements according to embodiments are applied may include not only image display electronic devices such as a smartphone (10_1a), tablet PC (10_1b), laptop (10_1c), TV (10_1d), and desk monitor (10_1e), but also wearable electronic devices including display modules such as smart glasses (10_2a), head-mounted display (10_2b), and smart watch (10_2c), and automotive electronic devices (10_3) including display modules such as a CID (Center Information Display) and room mirror display placed on the instrument panel, center fascia, and dashboard of a car.

[0232] [Manufacturing Method]

[0233] Each layer included in the hole transport region, the light-emitting layer, and each layer included in the electron transport region can be formed in a predetermined region using various methods such as vacuum deposition, spin coating, casting, LB method (Langmuir-Blodgett), inkjet printing, laser printing, and laser thermal imaging (LITI).

[0234] The above color filter area, color conversion area, etc. can be formed in a predetermined area using spin coating, casting, inkjet printing, etc.

[0235] When each layer included in the light-emitting layer and the electron transport region is formed by vacuum deposition, the deposition conditions are, for example, a deposition temperature of about 100 to about 500°C, about 10 -8 to about 10 -3 Within a vacuum level of torr and a deposition rate range of about 0.01 to about 100 Å / sec, the material to be included in the layer to be formed and the structure of the layer to be formed can be selected.

[0236] When each layer included in the light-emitting layer and the electron transport region is formed by spin coating, the coating conditions can be selected, for example, within a coating speed of about 2000 rpm to about 5000 rpm and a heat treatment temperature range of about 80°C to 200°C, taking into consideration the material to be included in the layer to be formed and the structure of the layer to be formed.

[0237] A composition according to one embodiment of the present invention can be used in solution processes such as spin coating and inkjet printing.

[0238] [Definition of Terms]

[0239] C3-C in this specification 60 A carbocyclic group refers to a cyclic group having 3 to 60 carbon atoms, consisting solely of carbon as ring-forming atoms, and C1-C 60 A heterocyclic group refers to a cyclic group having 1 to 60 carbon atoms that includes, in addition to carbon, a heteroatom as a ring-forming atom. The above C3-C 60 Carbocyclic group and C1-C 60 Each heterocyclic group may be a monocyclic group consisting of one ring or a polycyclic group in which two or more rings are condensed together. For example, the above C1-C60 The number of ring-forming atoms in a heterocyclic group can be 3 to 61.

[0240] In this specification, the cyclic group is the above C3-C 60 Carbocyclic group and C1-C 60 Includes all heterocyclic groups.

[0241] In this specification, π electron-excess C3-C 60 Cyclic group (π electron-rich C3-C 60 A cyclic group refers to a cyclic group having 3 to 60 carbon atoms that does not contain *-N=*' as a ring-forming moiety, and π electron-deficient nitrogen-containing C1-C 60 cyclic group (π electron-deficient nitrogen-containing C1-C 60 A cyclic group refers to a heterocyclic group having 1 to 60 carbon atoms containing *-N=*' as a ring-forming moiety.

[0242] for example,

[0243] The above C3-C 60 The carbocyclic group may be i) group T1 or ii) a condensed ring group formed by the condensation of two or more groups T1 together (e.g., cyclopentadiene group, adamantane group, norbornane group, benzene group, pentylene group, naphthalene group, azulene group, indacene group, acenaphtylene group, phenalene group, phenanthrene group, anthracene group, fluoranthene group, triphenylene group, pyrene group, chrysene group, perylene group, pentapene group, heptylene group, naphthacene group, fisene group, hexacene group, pentacene group, rubicene group, coronene group, ovalene group, indene group, fluorene group, spiro-bifluorene group, benzofluorene group, indenophenanthrene group, or indenoanthracene group), and

[0244] The above C1-C 60A heterocyclic group is i) group T2, ii) a condensed ring group formed by the condensation of two or more groups T2, or iii) a condensed ring group formed by the condensation of one or more groups T2 and one or more groups T1 (e.g., pyrrole group, thiophene group, furan group, indole group, benzodole group, naphthoyndole group, isodole group, benzisoindole group, naphthoyisoindole group, benzocillol group, benzothiophene group, benzofuran group, carbazole group, dibenzocillol group, dibenzothiophene group, dibenzofuran group, indenocarbazole group, indolocarbazole group, benzofurocarbazole group, benzothienocarbazole group, benzocillolocarbazole group, benzodolocarbazole group, benzoindolocarbazole group, benzocarbazole group, benzonaphthofuran group, benzonaphthiophene group, Benzonaphthosilol group, benzofurodibenzofuran group, benzofurodibenzothiophen group, benzothienodibenzothiophen group, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiaazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzisoxazole group, benzothiaazole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazolin group, benzoquinazolin group, phenanthroline group, sinoline group, phthalazine group, It may be the naftiridine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluoren group, azadibenzocilol group, azadibenzothiophen group, azadibenzofuran group, etc.),

[0245] The above π electron-excess C3-C 60A cyclic group is i) group T1, ii) a condensed ring group formed by condensing two or more groups T1 together, iii) group T3, iv) a condensed ring group formed by condensing two or more groups T3 together, or v) a condensed ring group formed by condensing one or more groups T3 and one or more groups T1 together (e.g., the above C3-C 60 Carbocyclic group, 1H-pyrrole group, Silol group, Borole group, 2H-pyrrole group, 3H-pyrrole group, Thiophene group, Furan group, Indole group, Benzoindole group, Naphthoyindole group, Isoindole group, Benzoisoindole group, Naphthoyisoindole group, Benzocilol group, Benzothiophene group, Benzofuran group, Carbazole group, Dibenzocilol group, Dibenzothiophene group, Dibenzofuran group, Indenocarbazole group, Indolocarbazole group, Benzofurocarbazole group, Benzothienocarbazole group, Benzocilolocarbazole group, Benzoindolocarbazole group, Benzocarbazole group, Benzonaphthofuran group, Benzonaphthothiophene group, Benzonaphtholilol group, Benzofurodibenzofuran group, It may be the benzopurodibenzothiophen group, benzothienodibenzothiophen group, etc.,

[0246] The above π electron-deficient nitrogen-containing C1-C 60A cyclic group is i) group T4, ii) a condensed ring group formed by the condensation of two or more groups T4, iii) a condensed ring group formed by the condensation of one or more groups T4 and one or more groups T1, iv) a condensed ring group formed by the condensation of one or more groups T4 and one or more groups T3, or v) a condensed ring group formed by the condensation of one or more groups T4, one or more groups T1, and one or more groups T3 (e.g., pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiaazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzisoxazole group, benzothiaazole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, It may be the isoquinoline group, benzoquinoline group, benzisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazolin group, benzoquinazolin group, phenanthroline group, sinoline group, phthalazine group, naftiridine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluoren group, azadibenzocilol group, azadibenzothiophen group, azadibenzofuran group, etc.),

[0247] The above group T1 is a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, a cycloheptene group, an adamantane group, norbornane (or, bicyclo[2.2.1]heptane)) group, norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.1.1]octane group, or a benzene group, and

[0248] The above group T2 is a furan group, a thiophene group, a 1H-pyrrole group, a silol group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazol group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiaazole group, a thiadiazole group, azasilol group, azaborol group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a tetrazine group, a pyrrolidine group, an imidazolidine group, a dihydropyrrole group, a piperidine group, a tetrahydropyridine group, a dihydropyridine group, a hexahydropyrimidine group, a tetrahydropyrimidine group, a dihydropyrimidine group, a piperazine group, a tetrahydropyrazine group, It is a dihydropyrazine group, a tetrahydropyridazine group, or a dihydropyridazine group, and

[0249] The above group T3 is a furan group, a thiophene group, an 1H-pyrrole group, a silol group, or a borole group, and

[0250] The above group T4 may be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazol group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiaazole group, a thiadiazole group, an azacilol group, an azaborol group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetrazine group.

[0251] In this specification, the cyclic group, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, π electron-excess C3-C 60 Cyclic group or π electron-deficient nitrogenous C1-C 60 The term "cyclic group" may be a group condensed to any cyclic group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, a tetravalent group, etc.) depending on the structure of the chemical formula in which the term is used. For example, "benzene group" may be a benzo group, a phenyl group, a phenylene group, etc., which can be easily understood by a person skilled in the art depending on the structure of the chemical formula containing the "benzene group."

[0252] For example, 1 valence C3-C 60 Carbocyclic group and 1 valence C1-C 60 An example of a heterocyclic group is C3-C 10 Cycloalkyl group, C1-C 10 Heterocycloalkyl group, C3-C 10 Cycloalkenyl group, C1-C 10 Heterocycloalkenyl group, C6-C 60 Aryl group, C1-C 60 It may include a heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic heterocondensed polycyclic group, and a divalent C3-C 60 Carbocyclic groups and 2 C1-C 60 An example of a heterocyclic group is C3-C 10 Cycloalkylene group, C1-C 10Heterocycloalkylene group, C3-C 10 Cycloalkenylene group, C1-C 10 Heterocycloalkenylene group, C6-C 60 Aryllene group, C1-C 60 It may include a heteroarylene group, a divalent non-aromatic condensed polycyclic group, and a divalent non-aromatic heterocondensed polycyclic group.

[0253] C1-C in this specification 60 The alkyl group refers to a linear or branched aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, n -Propyl group, isopropyl group, n -butyl group, sec -butyl group, isobutyl group, tert -butyl group, n -Pentyl, tert -Pentyl group, neopentyl group, isopentyl group, sec -pentyl group, 3-pentyl group, sec -Isopentyl group, n - Hexyl group, isohexyl group, sec -hexyl group, tert -hexyl group, n - heptyl group, isoheptyl group, sec -Heptyl group, tert -Heptyl group, n -Octyl group, iso-octyl group, sec -Octyl group, tert -Octyl group, n -Nonilgi, Isononilgi, sec -Playing, tert -Playing, n - Decyl group, isodecyl group, sec -Desil, tert - Includes decyl groups, etc. C1-C in this specification. 60 The alkylene group is the C1-C 60 It refers to a divalent group having the same structure as an alkyl group.

[0254] C2-C in this specification 60 The alkenyl group is C2-C 60It refers to a monovalent hydrocarbon group comprising one or more carbon-carbon double bonds at the middle or terminal of an alkyl group, and specific examples thereof include an ethenyl group, a propenyl group, a butenyl group, etc. In this specification, C2-C 60 The alkenylene group is the above C2-C 60 It refers to a divalent group having the same structure as an alkenyl group.

[0255] C2-C in this specification 60 The alkynyl group is C2-C 60 It refers to a monovalent hydrocarbon group comprising one or more carbon-carbon triple bonds at the middle or terminal of an alkyl group, and specific examples thereof include ethinyl groups, propynyl groups, etc. In this specification, C2-C 60 The alkynylene group is the above C2-C 60 It refers to a divalent group having the same structure as an alkynyl group.

[0256] C1-C in this specification 60 The alkoxy group is -OA 101 (Here, A 101 The above C1-C 60 It refers to a monovalent group having the chemical formula of an alkyl group, and specific examples thereof include a methoxy group, an ethoxy group, an isopropyloxy group, etc.

[0257] C3-C in this specification 10 A cycloalkyl group refers to a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and specific examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantanyl group, norbornanyl group (or, a bicyclo[2.2.1]heptyl group), a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, a bicyclo[2.1.1]octyl group, etc. In this specification, C3-C 10 The cycloalkylene group is the C3-C 10It refers to a divalent group having the same structure as a cycloalkyl group.

[0258] C1-C in this specification 10 A heterocycloalkyl group refers to a monovalent cyclic group having 1 to 10 carbon atoms, comprising at least one heteroatom as a ring-forming atom in addition to a carbon atom, and specific examples thereof include 1,2,3,4-oxatriazolidinyl group, tetrahydrofuranyl group, tetrahydrothienyl group, etc. In this specification, C1-C 10 The heterocycloalkylene group is the C1-C 10 It refers to a divalent group having the same structure as a heterocycloalkyl group.

[0259] C3-C in this specification 10 A cycloalkenyl group refers to a monovalent cyclic group having 3 to 10 carbon atoms, having at least one carbon-carbon double bond within the ring, but not having aromaticity; specific examples thereof include cyclopentenyl groups, cyclohexenyl groups, cycloheptenyl groups, etc. In this specification, C3-C 10 The cycloalkenylene group is the above C3-C 10 It refers to a divalent group having the same structure as a cycloalkenyl group.

[0260] C1-C in this specification 10 The heterocycloalkenyl group is a monovalent cyclic group having 1 to 10 carbon atoms, comprising, in addition to the carbon atom, at least one heteroatom as a ring-forming atom, and has at least one double bond within the ring. The C1-C 10 Specific examples of heterocycloalkenyl groups include 4,5-dihydro-1,2,3,4-oxatriazoleyl groups, 2,3-dihydrofuranyl groups, 2,3-dihydrothiophenyl groups, etc. In this specification, C1-C 10 The heterocycloalkenylene group is the above C1-C 10It refers to a divalent group having the same structure as a heterocycloalkenyl group.

[0261] C6-C in this specification 60 An aryl group refers to a monovalent group having a carbocyclic aromatic system with 6 to 60 carbon atoms, and C6-C 60 An arylene group refers to a divalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms. The above C6-C 60 Specific examples of aryl groups include phenyl group, pentalenyl group, naphthyl group, azulenyl group, indacenyl group, acenaphthyl group, phenalenyl group, phenanthrenyl group, anthracenyl group, fluoranthenyl group, triphenylenyl group, pyrenyl group, chrysenyl group, perylenyl group, pentaphenyl group, Includes hepthalenyl group, naphthacenyl group, fisenyl group, hexacenyl group, penthacenyl group, rubisenyl group, coronenyl group, ovalenyl group, etc. The above C6-C 60 Aryl group and C6-C 60 If the arylene group contains two or more rings, the two or more rings can be condensed together.

[0262] C1-C in this specification 60 A heteroaryl group refers to a monovalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms, comprising at least one heteroatom as a ring-forming atom in addition to a carbon atom, and C1-C 60 A heteroarylene group refers to a divalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms, which additionally includes at least one heteroatom as a ring-forming atom in addition to the carbon atoms. 60 Specific examples of heteroaryl groups include pyridinyl groups, pyrimidinyl groups, pyrazinyl groups, pyridazinyl groups, triazinyl groups, quinolinyl groups, benzoquinolinyl groups, isoquinolinyl groups, benzisoquinolinyl groups, quinoxalinyl groups, benzoquinoxalinyl groups, quinazolinyl groups, benzoquinazolinyl groups, cinolinyl groups, phenanthrolinyl groups, phthalazinyl groups, naphthalidinyl groups, etc. The above C1-C60 Heteroaryl group and C1-C 60 When a heteroarylene group contains two or more rings, the two or more rings can be condensed together.

[0263] In this specification, a monovalent non-aromatic condensed polycyclic group refers to a monovalent group (e.g., having 8 to 60 carbon atoms) in which two or more rings are condensed together, and the entire molecule contains only carbon as a ring-forming atom and has non-aromaticity. Specific examples of the monovalent non-aromatic condensed polycyclic group include indenyl groups, fluorenyl groups, spiro-bifluorenyl groups, benzofluorenyl groups, indenopenantrenyl groups, indenoanthracenyl groups, etc. In this specification, a divalent non-aromatic condensed polycyclic group refers to a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic group.

[0264] In this specification, a monovalent non-aromatic condensed heteropolycyclic group means a monovalent group (e.g., having 1 to 60 carbon atoms) in which two or more rings are condensed together, and in addition to carbon atoms as ring-forming atoms, at least one heteroatom is included, and the entire molecule is non-aromatic. Specific examples of the above monovalent non-aromatic heterocondensed polycyclic group include: a pyrrole group, a thiophenyl group, a furanyl group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzoisoindole group, a naphthoisoindole group, a benzocylol group, a benzothiophenyl group, a benzofuranyl group, a carbazole group, a dibenzocylol group, a dibenzothiophenyl group, a dibenzofuranyl group, azacarbazole group, azafluorenyl group, azadibenzocylol group, azadibenzothiophenyl group, azadibenzofuranyl group, a pyrazol group, an imidazole group, a triazole group, a tetrazole group, an oxazole group, an isooxazole group, a thiazole group, an isothiazole group, an oxadiazole group, a thiadiazole group, a thiadiazole group, Includes benzopyrazol group, benzimidazole group, benzoxazole group, benzothiazole group, benzoxadiazole group, benzothiadiazole group, imidazopyridinyl group, imidazopyrimidinyl group, imidazotriazinyl group, imidazopyrazinyl group, imidazopyridazinyl group, indenocarbazole group, indolocarbazole group, benzofurocarbazole group, benzothienocarbazole group, benzosilolocarbazole group, benzindolocarbazole group, benzocarbazole group, benzonaphthofuranyl group, benzonaphthothiophenyl group, benzonaphthosilol group, benzofurodibenzofuranyl group, benzofurodibenzothiophenyl group, benzothienodibenzothiophenyl group, etc. In this specification, a divalent non-aromatic heterocondensed polycyclic group refers to a divalent group having the same structure as the monovalent non-aromatic heterocondensed polycyclic group.

[0265] C6-C in this specification 60 The aryloxy group is -OA 102 (Here, A 102 is the above C6-C 60 Pointing to arylgime), and the above C6-C 60arylthio is -SA 103 (Here, A 103 The above C6-C 60 It refers to the Arilgigiim).

[0266] C7-C in this specification 60 The arylalkyl group is -A 104 A 105 (Here, A 104 is C1-C 54 It is an alkylene group, and A 105 is C6-C 59 Referring to arylgiim), and C2-C in this specification 60 The heteroarylalkyl group is -A 106 A 107 (Here, A 106 C1-C 59 It is an alkylene group, and A 107 C1-C 59 It refers to a heteroaryl group.

[0267] "R" in this specification 10a "Is,

[0268] Deuterium (-D), -F, -Cl, -Br, -I, hydroxyl group, cyano group, or nitro group;

[0269] Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl group, C2-C 60 Heteroarylalkyl group, -Si(Q 11 )(Q 12 )(Q 13 ), -N(Q 11 )(Q 12 ), -B(Q 11 )(Q 12 ), -C(=O)(Q 11 ), -S(=O)2(Q 11 ), -P(=O)(Q 11 )(Q 12), or substituted or unsubstituted with any combination thereof, C1-C 60 Alkyl group, C2-C 60 alkenyl group, C2-C 60 alkynyl group, or C1-C 60 Alkoxygenation;

[0270] Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 60 Alkyl group, C2-C 60 alkenyl group, C2-C 60 alkynyl group, C1-C 60 Alkoxy group, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl group, C2-C 60 Heteroarylalkyl group, -Si(Q 21 )(Q 22 )(Q 23 ), -N(Q 21 )(Q 22 ), -B(Q 21 )(Q 22 ), -C(=O)(Q 21 ), -S(=O)2(Q 21 ), -P(=O)(Q 21 )(Q 22 ), or substituted or unsubstituted with any combination thereof, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl group, or C2-C 60 heteroarylalkyl group; or

[0271] -Si(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q 31 )(Q 32 ), -C(=O)(Q31 ), -S(=O)2(Q 31 ), or -P(=O)(Q 31 )(Q 32 );

[0272] It could be.

[0273] Q1 to Q3, Q in this specification 11 to Q 13 , Q 21 to Q 23 and Q 31 to Q 33 They are independently hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C1-C 60 Alkyl group; C2-C 60 Alkenyl group; C2-C 60 alkynyl group; C1-C 60 Alkoxy group; or

[0274] Deuterium, -F, cyano group, C1-C 60 Alkyl group, C1-C 60 C3-C substituted or unsubstituted with an alkoxy group, a phenyl group, a biphenyl group, or any combination thereof 60 Carbocyclic group, C1-C 60 Heterocyclic group, C7-C 60 Arylalkyl group, or C2-C 60 It can be a heteroarylalkyl group.

[0275] In this specification, a heteroatom refers to any atom other than a carbon atom. Examples of such heteroatoms include O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0276] In this specification, transition metals include hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), or gold (Au), etc.

[0277] In this specification, "Ph" means a phenyl group, "Me" means a methyl group, "Et" means an ethyl group, and "tert-Bu" or "Bu t " represents the tert-butyl group, and "OMe" represents the methoxy group.

[0278] In this specification, "biphenyl group" means "phenyl group substituted with a phenyl group." The "biphenyl group" is a substituent of "C6-C 60 It belongs to the "substituted phenyl group" which is an "aryl group".

[0279] In this specification, "terphenyl group" means "phenyl group substituted with a biphenyl group." The "terphenyl group" is a substituent of "C6-C 60 C6-C substituted with aryl groups 60 It belongs to the "substituted phenyl group" which is an "aryl group".

[0280] The number of carbon atoms in the definition of a substituent is exemplary. For example, C1-C 60 The maximum number of carbon atoms in an alkyl group being 60 is exemplary, and the definition of an alkyl group is C1-C 20 The same applies to alkyl groups. The same applies to other cases.

[0281] Any hydrogen in the compound structure of this specification may be optionally substituted with deuterium.

[0282] In this specification, * and *' refer to bonding sites with adjacent atoms in the corresponding chemical formulas, unless otherwise defined.

[0283] Hereinafter, a compound and a light-emitting element according to one embodiment of the present invention will be described in more detail with reference to examples.

[0285] [Example]

[0286] Manufacturing of light-emitting devices

[0287] Example 1

[0288] 15Ω / cm 2(800Å) Ag / ITO glass substrates were cut into 50mm x 50mm x 0.5mm pieces, ultrasonically cleaned with isopropyl alcohol and pure water for 5 minutes each, then cleaned by irradiating with ultraviolet light and exposing to ozone for 15 minutes, and installed in a vacuum deposition apparatus.

[0289] A light-emitting device was fabricated by sequentially forming an Al2O3 layer (layer thickness: 0.5 nm) / QD light-emitting layer (red InP quantum dot / layer thickness: 15 nm) / electron transport layer (ZnMgO / layer thickness: 50 nm) / Al electrode (layer thickness: 130 nm) on an ITO substrate.

[0290] The electron transport layer and Al electrode were fabricated using a deposition method.

[0291] The insulating material layer, i.e., the layer consisting of Al2O3, the QD emissive layer, and the electron transport layer were coated using an inkjet coating method. After thin film formation, the insulating material layer, the QD emissive layer, and the electron transport layer were 10 -3 After the VCD process was carried out in Torr, the bake process was carried out at 100℃ for 10 min.

[0292] Example 2

[0293] A light-emitting device was fabricated in the same manner as in Example 1, except that the layer made of Al2O3 was 1 nm thick.

[0294] Example 3

[0295] A light-emitting device was fabricated in the same manner as in Example 1, except that the layer made of Al2O3 was 5 nm thick.

[0296] Example 4

[0297] A light-emitting device was fabricated in the same manner as in Example 1, except that a layer made of HfO2 instead of Al2O3 was made with a thickness of 0.5 nm.

[0298] Comparative Example 1

[0299] A light-emitting device was fabricated in the same manner as in Example 1, except that instead of a layer made of Al2O3 on an ITO substrate, a hole injection layer (PEDOT:PSS = 1:1 wt%) (layer thickness: 45 nm) and a hole transport layer (TFB: poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl) diphenylamine)]) (layer thickness: 30 nm) were sequentially formed.

[0300] Comparative Example 2

[0301] A light-emitting device was fabricated in the same manner as in Example 1, except that the layer made of Al2O3 was 10 nm thick.

[0302] Comparative Example 3

[0303] A light-emitting device was fabricated in the same manner as in Example 1, except that the layer made of Al2O3 was 23 nm thick.

[0305] The characteristics of the light-emitting devices fabricated in the examples and comparative examples were evaluated, and the results are shown in Table 1. The driving voltage and luminance of the quantum dot light-emitting devices were measured using a Keithley SMU 236 source meter and a PR650 luminance meter.

[0306] Thickness (nm) Voltage (V, @5mA / cm²) 2 ) Example 1 [Al2O3] 0.5 1.4 Example 2 [Al2O3] 1 3.6 Example 3 [Al2O3] 5 4.9 Comparative Example 2 [Al2O3] 10 12.3 Comparative Example 3 [Al2O3] 23 > 20

[0307] From the results of Table 1 above, it can be seen that the driving voltage of the example device is lower than that of the comparative example device.

[0309] The lifespan according to brightness is T 50 It was measured as, at this time, T 50 represents the time required to reach 50% of the initial brightness. The results are shown in Table 2.

[0310] T 50 (h) L 0 = 1,000 cd / m 2 Converted to T 50 (h) [Acceleration factor n 1.8] Example 1 [Al2O3] 20 ( L 0 = 13,000 cd / m 2 ( ~ 2,000 Example 4 [HfO2] 178 ( L 0 = 6,400 cd / m 2 ) ~ 5,000 Comparative Example 1 [PEDOT:PSS / TFB] 30 ( L 0 = 1,400 cd / m 2 ) ~ 55

[0311] Table 2 L 0 to 1,000 cd / m 2 Converted to T50 From the result of (h), it can be seen that the device of the example has a better lifespan than the device of the comparative example.

[0313] As such, the present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims. Explanation of the symbols

[0315] 100: Light-emitting element 110: First electrode 130: Middle layer 150: Second electrode

Claims

Claim 1 A light-emitting device comprising: a first electrode; a second electrode opposite to the first electrode; an intermediate layer interposed between the first electrode and the second electrode and including a light-emitting layer; wherein the light-emitting layer includes quantum dots, and a charge modulation layer (CML) is located between the first electrode and the light-emitting layer. Claim 2 A light-emitting device according to claim 1, wherein the first electrode is an anode and the second electrode is a cathode, and the intermediate layer further comprises an electron transport region including a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof. Claim 3 A light-emitting device according to paragraph 2, wherein the electron transport region is located between the second electrode and the light-emitting layer and includes an electron transport layer and / or an electron injection layer, and the electron transport layer and / or an electron injection layer includes an inorganic material, an organic material, or any combination thereof. Claim 4 In paragraph 3, the electron transport layer and the electron injection layer are independently ZnMgO x , ZnO x , Cs2CO3, TiO x , WO x , SnO x A light-emitting device comprising , ZnS, BPhen(4,7-Diphenyl-1,10-phenanthroline), TPBi(2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)), Alq3, BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), or any combination thereof: where each x independently represents a number from 0.1 to 3. Claim 5 A light-emitting element according to claim 1, wherein the insulating material comprises an inorganic insulating material, an organic insulating material, or any combination thereof. Claim 6 A light-emitting device according to claim 5, wherein the inorganic insulating material comprises aluminum oxide; aluminum nitride; titanium nitride; alkali metal halide; silicon oxide; silicon nitride; silicon oxide nitride; hafnium oxide; zirconium oxide; or oxides of a combination of two or more of aluminum, silicon, hafnium, and zirconium. Claim 7 In paragraph 5, the above-mentioned inorganic insulating material is Al2O3, SiO2 x , SiN x , SiO x N y , HfO2, ZrO2, HfSiO4, HfAlO, AlN x , TiN x A light-emitting element comprising , LiF, or any combination thereof: where x = a number from 0.1 to 3, y = a number from 0.1 to 3 Claim 8 A light-emitting device according to claim 5, wherein the organic insulating material comprises PMMA (Poly(methyl methacrylate)), PVA (polyvinyl alcohol), or any combination thereof. Claim 9 A light-emitting device according to claim 1, wherein the first electrode is an anode, the second electrode is a cathode, and the thickness of the charge control layer is greater than 0 nm and less than or equal to 5 nm. Claim 10 A light-emitting element according to claim 1, wherein the first electrode and / or the second electrode is a transparent electrode. Claim 11 In claim 10, the light-emitting device, wherein the transparent electrode is a single-layer or multi-layer structure comprising a metal oxide or a metal. Claim 12 In claim 11, the metal oxide is indium tin oxide (ITO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), molybdenum oxide (MoO₂). x ), vanadium oxide (VO x ), nickel oxide (NiO x A light-emitting element comprising ), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof: where each x independently represents a number from 0.1 to 3. Claim 13 A light-emitting element according to claim 11, wherein the metal comprises magnesium (Mg), silver (Ag), gold (Au), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof. Claim 14 A light-emitting device according to claim 1, wherein the quantum dot has a core-shell structure comprising a core comprising a semiconductor compound; and a shell comprising an oxide of a metal, metalloid or nonmetal, a semiconductor compound, or a combination thereof. Claim 15 In claim 14, the semiconductor compound comprises a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; a group IV element or compound; or any combination thereof; and the oxide of the metal, metalloid, or nonmetal independently comprises SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, or any combination thereof, a light-emitting device. Claim 16 CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InZnP, InGaZnP, InAlZnP, GaS, GaSe Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS 3 A light-emitting device comprising InGaSe3, AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS, AgInGaS2, CuInGaS2, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, Si, Ge, SiC, SiGe, or any combination thereof. Claim 17 In claim 14, the semiconductor compound included in the shell comprises CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof, a light-emitting device. Claim 18 An electronic device including the light-emitting element of claim 1. Claim 19 An electronic device according to paragraph 18, further comprising a display module, a processor, a memory, and a power module. Claim 20 An electronic device according to claim 18, wherein the electronic device comprises one of a smartphone, tablet PC, laptop, TV, desk monitor, smart glasses, head-mounted display, smart watch, instrument panel of a vehicle, center fascia, Center Information Display (CID) placed on the dashboard of a vehicle, or room mirror display.

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