Source circuit board having a waveguide channel and integrated digital radio frequency circuit system

Abstract

An integrated digital RF circuit system comprises: a base substrate including a substrate-integrated waveguide including a waveguide width, a first plurality of vias, and a second plurality of vias; and a source circuit board including a waveguide channel, wherein the waveguide channel is at least partially located between the first plurality of vias and the second plurality of vias; the waveguide channel defines a channel length and a channel width; the channel length is greater than the channel width; and the channel length is greater than the waveguide width.

Description

Technology Field

[0001] Cross-reference regarding related applications

[0002] The present application claims the benefit of priority under 35 USC §119 to U.S. provisional application No. 63 / 604254 filed November 30, 2023, the contents of which are incorporated herein by reference in their entirety.

[0003] The present disclosure relates to an integrated digital radio frequency ("RF") circuit system having a waveguide channel in general, a source circuit board, and a method for manufacturing the same. Background Technology

[0004] An RF circuit system (e.g., an RF transceiver) may be required to connect an antenna package (e.g., a glass antenna package) to a circuit board (e.g., a printed circuit board) with minimal electrical loss. However, conventional methods for constructing such an RF circuit system with reduced electrical loss may involve using larger (and often consequently more expensive) connectors to connect the antenna package of the RF circuit system to the circuit board. However, in some contexts, the RF circuit system may also be required to reduce its size and manufacturing costs while reducing electrical loss, and thus, these conventional methods for reducing electrical loss may not be desired.

[0005] RF circuit systems typically require attaching the circuit board and the antenna package by soldering the circuit board to the antenna package. However, requiring such soldering can reduce the material available for forming any component of the circuit board, the antenna package, and / or either one or both of the circuit board and / or the antenna package. Additionally, soldering can cause varying degrees of thermal expansion between the circuit board and the antenna package, which can increase the stress effects experienced by the resulting RF circuit system. Furthermore, attaching the circuit board and the antenna package by soldering may still require inserting one or more layers, such as redistribution layers, connectors, and / or jumpers, between the circuit board and the antenna package.

[0006] Therefore, there may be a need for an RF circuit system that minimizes electrical loss between the antenna package and the circuit board while also minimizing the size and manufacturing cost of the RF circuit system. Additionally, there may be a need for an RF circuit system that can attach the antenna package or the circuit board without requiring soldering the antenna package to the circuit board and / or inserting a layer between them.

[0007] According to the first embodiment A1, the integrated digital radio frequency ("RF") circuit system comprises a first base substrate including a first substrate integrated waveguide, wherein the first substrate integrated waveguide comprises a first waveguide length and a first waveguide width, a first plurality of vias arranged along the first waveguide length, each of which is a first plurality of vias extending by at least partially penetrating the first base substrate, and a second plurality of vias arranged along the first waveguide length, each of which is a second plurality of vias extending by at least partially penetrating the first base substrate, and the first plurality of vias and the second plurality of vias are spaced apart by the first waveguide width; The source circuit board may include a source circuit board comprising a front side, a rear side opposite to the front side, and a waveguide channel defined by the source circuit board that guides electromagnetic waves to or from a first substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side; wherein the waveguide channel is at least partially located between a first plurality of vias and a second plurality of vias; the waveguide channel defines a channel length and a channel width; the channel length is greater than the channel width; and the channel length is greater than the first waveguide width.

[0008] A second embodiment A2 includes an integrated digital RF circuit system according to embodiment A1, wherein the source circuit board may include a first base board, the first base board may include a source electromagnetic wave transmission element, and the source electromagnetic wave transmission element may propagate or receive electromagnetic waves through a waveguide channel.

[0009] A third embodiment A3 comprises an integrated digital RF circuit system according to embodiment A2, wherein the source electromagnetic wave transmission element may include a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0010] The fourth embodiment A4 comprises an integrated digital RF circuit system according to embodiment A2 or embodiment A3, wherein the first base substrate may be attached to a source circuit board by at least one of an adhesive; soldering; room temperature laser welding; laser sintering; optical contact; thermal diffusion bonding; or any combination thereof.

[0011] A fifth embodiment A5 includes an integrated digital RF circuit system according to any one of embodiments A1-A4, wherein the integrated digital RF circuit system may further include an antenna package, wherein the antenna package may be attached to the rear side of a source circuit board, and wherein the antenna package may include a first base board.

[0012] A sixth embodiment A6 comprises an integrated digital RF circuit system according to embodiment A5, wherein the antenna package may further comprise a spacer layer and an antenna layer; the antenna layer may comprise an antenna element; the spacer layer may be positioned between the antenna layer and a first base substrate; and the first base substrate may be positioned between the spacer layer and the rear side of a source circuit board.

[0013] A 7th embodiment A7 comprises an integrated digital RF circuit system according to embodiment A6, wherein the antenna element may receive a first electromagnetic wave from a first substrate integrated waveguide and transmit the first electromagnetic wave into the environment; receive a first electromagnetic wave from the environment and transmit the first electromagnetic wave to the first substrate integrated waveguide; or perform any combination thereof.

[0014] Eighth embodiment A8 comprises an integrated digital RF circuit system according to any one of embodiments A5-A7, wherein the source circuit board may further comprise a second base board; the second base board may comprise a second board integrated waveguide; the antenna package may comprise a package electromagnetic wave transmission element; the second board integrated waveguide may comprise a source electromagnetic wave transmission element; and the waveguide channel may guide an electromagnetic wave between the source electromagnetic wave transmission element and the package electromagnetic wave transmission element.

[0015] Ninth embodiment A9 comprises an integrated digital RF circuit system according to embodiment A8, wherein either or both of the package electromagnetic wave transmission element and the source electromagnetic wave transmission element may comprise a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0016] The 10th embodiment A10 includes an integrated digital RF circuit system according to embodiment A8 or embodiment A9, wherein the second substrate integrated waveguide may include a third plurality of vias arranged along the length of the second waveguide, each of which is a third plurality of vias extending at least partially through the second base substrate; and a fourth plurality of vias arranged along the length of the second waveguide, each of which is a fourth plurality of vias extending at least partially through the second base substrate, and the third plurality of vias and the fourth plurality of vias are spaced apart by the width of the second waveguide; wherein the waveguide channel may be located at least partially between the third plurality of vias and the fourth plurality of vias; and the channel length may be greater than the width of the second waveguide.

[0017] The 11th embodiment A11 comprises an integrated digital RF circuit system according to any one of embodiments A5-A10, wherein the antenna package may be attached to a source circuit board by at least one of adhesive; soldering; room temperature laser welding; laser sintering; optical contact; thermal diffusion bonding; or any combination thereof.

[0018] The 12th embodiment A12 includes an integrated digital RF circuit system according to any one of embodiments A1-A11, wherein the electromagnetic waves may include a frequency of 300 MHz or higher and 300 GHz or lower.

[0019] The 13th embodiment A13 includes an integrated digital RF circuit system according to embodiment A12, wherein the electromagnetic waves may include a frequency of 75 GHz or higher and 84 GHz or lower.

[0020] The 14th embodiment A14 includes an integrated digital RF circuit system according to any one of embodiments A1-A13, wherein the electromagnetic wave may include a wavelength (λ); the first waveguide width may be (0.5 * λ) - 0.05 mm or greater; and the first waveguide width may be (0.5 * λ) + 0.05 mm or less.

[0021] The 15th embodiment A15 includes an integrated digital RF circuit system according to any one of embodiments A1-A14, wherein the channel length may be 2.9 mm or more and 3.1 mm or less; and the channel width may be 1.4 mm or more and 1.6 mm or less.

[0022] The 16th embodiment A16 includes an integrated digital RF circuit system according to any one of embodiments A1-A15, wherein the channel length may be parallel to the first waveguide length.

[0023] Example 17 A17 includes an integrated digital RF circuit system according to any one of Examples A1-A16, wherein the source circuit board may include a printed circuit board.

[0024] Example 18 A18 comprises an integrated digital RF circuit system according to any one of Examples A1-A17, wherein the first base substrate may comprise at least one of glass; ceramic; glass-ceramic; polymer; polycrystalline ceramic; single-crystal ceramic; or any combination thereof.

[0025] According to Example B1 of the 19th embodiment, a method for manufacturing an integrated digital RF circuit system may include the step of forming and / or using a source circuit board comprising a base substrate, wherein the base substrate comprises a substrate integrated waveguide, the substrate integrated waveguide comprises a waveguide length and a waveguide width, a first plurality of vias arranged along the waveguide length, wherein each of the first plurality of vias extends by at least partially penetrating the base substrate, and a second plurality of vias arranged along the waveguide length, wherein each of the second plurality of vias extends by at least partially penetrating the base substrate, and the first plurality of vias and the second plurality of vias are spaced apart by the first waveguide width, a front side, a rear side opposite to the front side, and a waveguide channel defined by the source circuit board for guiding electromagnetic waves to or from the first substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side, and wherein the waveguide channel comprises a channel length and a channel width The method may include the steps of: attaching an antenna layer to a spacer layer; attaching a spacer layer to a waveguide layer; attaching a waveguide layer to a rear side of a source circuit board, wherein the spacer layer is located between the waveguide layer and the antenna layer, and the waveguide layer is located between the spacer layer and the source circuit board.

[0026] 20th embodiment B2 includes a method according to embodiment B1, wherein the base substrate may include a source electromagnetic wave transmission element, and the source electromagnetic wave transmission element may propagate or receive electromagnetic waves through a waveguide channel.

[0027] Embodiment B3 of the 21st embodiment comprises a method according to embodiment B2, wherein the source electromagnetic wave transmission element may include a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0028] 22. Example B4 comprises a method according to embodiment B2 or embodiment B3, wherein the base substrate may be attached to a source circuit board by at least one of an adhesive; soldering; room temperature laser welding; laser sintering; optical contact; thermal diffusion bonding; or any combination thereof.

[0029] Example 23 B5 includes a method according to any one of Examples B1-B4, wherein the electromagnetic waves may include a frequency of 300 MHz or more and 300 GHz or less.

[0030] Example 24 B6 includes the method according to Example B5, wherein the electromagnetic waves may include a frequency of 75 GHz or higher and 84 GHz or lower.

[0031] Example 25 B7 comprises a method according to any one of Examples B1-B6, wherein the electromagnetic wave may include a wavelength (λ); the waveguide width may be (0.5 * λ) - 0.05 mm or greater; and the waveguide width may be (0.5 * λ) + 0.05 mm or less.

[0032] Example 26 B8 comprises a method according to any one of Examples B1-B7, wherein the channel length may be 2.9 mm or more and 3.1 mm or less; and the channel width may be 1.4 mm or more and 1.6 mm or less.

[0033] Example 27 B9 includes a method according to any one of Examples B1-B8, wherein the channel length may be parallel to the waveguide length.

[0034] Example 28 B10 comprises a method according to any one of Examples B1-B9, wherein the source circuit board may include a printed circuit board.

[0035] Example 29 B11 comprises a method according to any one of Examples B1-B10, wherein the base substrate may comprise at least one of glass; ceramic; glass-ceramic; polymer; polycrystalline ceramic; single-crystal ceramic; or any combination thereof.

[0036] According to Example C1 of the 30th embodiment, a method for manufacturing an integrated digital RF circuit system may include the step of forming and / or using a base substrate comprising a substrate integrated waveguide, wherein the substrate integrated waveguide comprises a first waveguide length and a first waveguide width, a first plurality of vias arranged along the first waveguide length, wherein each of the first plurality of vias extends by at least partially penetrating the base substrate, and a second plurality of vias arranged along the first waveguide length, wherein each of the second plurality of vias extends by at least partially penetrating the base substrate, and the first plurality of vias and the second plurality of vias are spaced apart by the first waveguide width; the step of attaching an antenna layer to a spacer layer; and the step of attaching a spacer layer to a base substrate. The method may include the step of attaching a base substrate to the rear side of a source circuit board, wherein the source circuit board includes a front side opposite to the rear side, and a waveguide channel defined by the source circuit board for guiding electromagnetic waves to or from a substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side, and the waveguide channel is at least partially located between a first plurality of vias and a second plurality of vias, and the waveguide channel defines a channel length and a channel width, wherein the channel length is greater than the channel width and the channel length is greater than the first waveguide width, and the base substrate is located between a spacer layer and a source circuit board, and the spacer layer is located between an antenna layer and a base substrate.

[0037] Embodiment C2 of the 31st embodiment comprises a method according to embodiment C1, wherein the base substrate may include a source electromagnetic wave transmission element, and the source electromagnetic wave transmission element may propagate or receive electromagnetic waves through a waveguide channel.

[0038] Embodiment C3 of the 32nd embodiment comprises a method according to embodiment C2, wherein the source electromagnetic wave transmission element may include a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0039] Example 33 C4 comprises a method according to embodiment C2 or embodiment C3, wherein the base substrate may be attached to a source circuit board by at least one of an adhesive; soldering; room temperature laser welding; laser sintering; optical contact; thermal diffusion bonding; or any combination thereof.

[0040] Embodiment 34 C5 comprises a method according to any one of embodiments C1-C4, wherein the source circuit board may further comprise a second base board; the second base board may comprise a second board integrated waveguide; the antenna layer may comprise a package electromagnetic wave transmission element; and the waveguide channel may guide an electromagnetic wave between the source electromagnetic wave transmission element and the package electromagnetic wave transmission element.

[0041] Embodiment C6 of the 35th embodiment comprises a method according to embodiment C5, wherein either or both of the package electromagnetic wave transmission element and the source electromagnetic wave transmission element may comprise a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0042] Embodiment C7 of the 36th embodiment comprises a method according to embodiment C5 or embodiment C6, wherein the second substrate integrated waveguide may include a second waveguide length and a second waveguide width; a third plurality of vias arranged along the second waveguide length, wherein each of the third plurality of vias extends by at least partially penetrating the second base substrate; and a fourth plurality of vias arranged along the second waveguide length, wherein each of the fourth plurality of vias extends by at least partially penetrating the second base substrate, and the third plurality of vias and the fourth plurality of vias are spaced apart by the second waveguide width; wherein the waveguide channel may be located at least partially between the third plurality of vias and the fourth plurality of vias; and the channel length may be greater than the second waveguide width.

[0043] 37. Embodiment C8 includes a method according to any one of embodiments C1-C7, wherein the electromagnetic waves may include a frequency of 300 MHz or more and 300 GHz or less.

[0044] Embodiment 38 C9 includes a method according to embodiment C8, wherein the electromagnetic waves may include a frequency of 75 GHz or higher and 84 GHz or lower.

[0045] Example 39 C10 comprises a method according to any one of embodiments C1-C9, wherein the electromagnetic wave comprises a wavelength (λ); the first waveguide width may be (0.5 * λ) - 0.05 mm or greater; and the first waveguide width may be (0.5 * λ) + 0.05 mm or less.

[0046] The 40th embodiment C11 comprises a method according to any one of embodiments C1-C10, wherein the channel length may be 2.9 mm or more and 3.1 mm or less; and the channel width may be 1.4 mm or more and 1.6 mm or less.

[0047] Example 41 C12 includes a method according to any one of Examples C1-C11, wherein the channel length may be parallel to the first waveguide length.

[0048] Example 42 C13 comprises a method according to any one of Examples C1-C12, wherein the source circuit board may include a printed circuit board.

[0049] Example 43 C14 comprises a method according to any one of Examples C1-C13, wherein the first base substrate may comprise at least one of glass; ceramic; glass-ceramic; polymer; polycrystalline ceramic; single-crystal ceramic; or any combination thereof.

[0050] Additional features and advantages of the embodiments described herein will be presented in the following detailed description, and will be partly readily apparent to those skilled in the art from such description or recognized by practicing the embodiments described herein, including the following detailed description, claims, and accompanying drawings.

[0051] It should be understood that both the foregoing general description and the following detailed description are intended to describe various embodiments and to provide an overview or framework for understanding the nature and characteristics of the claimed subject matter. The accompanying drawings are included to provide further understanding of the various embodiments and constitute part of this specification. The drawings serve to illustrate the various embodiments described herein and, together with the description, explain the principles and operation of the claimed subject matter. Brief explanation of the drawing

[0052] The embodiments presented in the drawings are by nature exemplary and illustrative and are not intended to limit the subject matter of the claims. The following detailed description of exemplary embodiments can be understood when read together with the following drawings, wherein similar structures are indicated by similar reference numerals, FIG. 1 schematically depicts an exploded view of an integrated digital RF circuit system comprising a source circuit board having a circuit board upper layer and a circuit board lower layer, and an antenna package having a waveguide layer, a spacer layer, and an antenna layer, according to one or more embodiments shown and described herein. FIG. 2a schematically depicts the rear side of the circuit board lower layer of a source circuit board according to one or more embodiments illustrated and described herein. FIG. 2b schematically depicts an enlarged view of a first base substrate on the rear side of the circuit board lower layer of the source circuit board of FIG. 2a, according to one or more embodiments illustrated and described herein. FIG. 2c schematically depicts the front side of the circuit board lower layer of FIG. 2a according to one or more embodiments illustrated and described herein. FIG. 2d schematically depicts an enlarged view of an integrated circuit on the front side of the circuit board lower layer of the source circuit board of FIG. 2a, according to one or more embodiments illustrated and described herein. FIG. 3a schematically depicts the front side of the upper layer of the circuit board of a source circuit board according to one or more embodiments illustrated and described herein. FIG. 3b schematically depicts an enlarged view of a waveguide channel on the front side of the upper layer of the circuit board of the source circuit board depicted in FIG. 3a, according to one or more embodiments illustrated and described herein. FIG. 3c schematically depicts an enlarged view of a substrate-integrated waveguide on a first base substrate on the rear side of a circuit board lower layer of a source circuit board, along with an overlay view of a waveguide channel on the upper layer of a circuit board of a source circuit board depicted in FIG. 3a, according to one or more embodiments illustrated and described herein. FIG. 4a schematically depicts an exploded view of a waveguide layer of an antenna package on a circuit board upper layer of a source circuit board according to one or more embodiments illustrated and described herein. FIG. 4b schematically depicts an enlarged view of a substrate-integrated waveguide on a waveguide layer of FIG. 4a, along with an overlay view of a waveguide channel on a circuit board upper layer of a source circuit board according to one or more embodiments illustrated and described herein. FIG. 5 schematically depicts an antenna layer of an antenna package according to one or more embodiments illustrated and described herein. FIG. 6 is a flowchart of a first method for manufacturing an integrated digital RF circuit system according to one or more embodiments illustrated and described herein. FIG. 7 is a flowchart of a second method for manufacturing an integrated digital RF circuit system according to one or more embodiments illustrated and described herein. FIG. 8 is a plot of insertion loss against the frequency of an electromagnetic wave propagated by an exemplary substrate-integrated waveguide according to one or more embodiments shown and described herein (y-axis: insertion loss of the substrate-integrated waveguide (decibels); x-axis: frequency of the electromagnetic wave propagated by the substrate-integrated waveguide (gigahertz)). Specific details for implementing the invention

[0053] The present disclosure relates, in one form, to a source circuit board having a waveguide channel for connecting an antenna to a source circuit board and an integrated digital radio frequency ("RF") circuit system, particularly to a source circuit board and an integrated digital radio frequency RF circuit system for use in routing microwaves or millimeter waves from a waveguide on the source circuit board to a waveguide on the antenna. Now, the source circuit board, the integrated digital RF circuit system, and a method for manufacturing the same will be described in detail.

[0054] Specifically, in the embodiments, the source circuit board and the integrated digital RF circuit system described herein may include a waveguide channel positioned around an electromagnetic wave transmission element, at least partially between the vias of the waveguide, and parallel or substantially parallel to the vias of the waveguide. In the embodiments, the waveguide may be a waveguide of either the source circuit board of the integrated digital RF circuit system or the substrate of the antenna package.

[0055] In an embodiment, the waveguide channel may be located around an electromagnetic wave transmission element. In an embodiment, the waveguide channel may be located at least partially between a first plurality of vias and a second plurality of vias of the waveguide. In an embodiment, the waveguide channel may define a channel length and a channel width, and the waveguide may define a waveguide length and a waveguide width, and the channel length may be greater than the channel width, and the channel length may be greater than the waveguide width. Accordingly, in an embodiment, the waveguide channel may be located parallel to or substantially parallel to the waveguide length of the waveguide. Accordingly, in an embodiment, the size of the waveguide channel may be determined such that it cannot have a channel length that is perpendicular or substantially perpendicular to the waveguide length of the waveguide while being located around an electromagnetic wave transmission element.

[0056] In an embodiment, the waveguide channel may define a channel width and a channel length greater than the channel width, and the waveguide channel may be located at least partially between a first plurality of vias and a second plurality of vias of a first waveguide of a source circuit board around a source electromagnetic wave transmission element of a source circuit board, at least partially between a third plurality of vias and a fourth plurality of vias of a second waveguide of an antenna package around a package electromagnetic wave transmission element of an antenna package, and the channel length may be greater than both the first waveguide width of the first waveguide and the second waveguide width of the second waveguide. Accordingly, in an embodiment, the waveguide channel may be located parallel or substantially parallel to both the first waveguide length of the first waveguide and the second waveguide length of the second waveguide.

[0057] Accordingly, an advantage of the present disclosure is that, in the embodiments, such waveguide channels can minimize electrical loss between a first waveguide of a source circuit board and a second waveguide of an antenna package (where the waveguide channel is located between them), as described in more detail below, for example, because the waveguide channels can provide a waveguide for electromagnetic waves propagating between the first waveguide and the second waveguide.

[0058] Another advantage of the present disclosure is that, in the embodiments, the size of the waveguide and / or the substrate or layer on which the waveguide is located can be reduced by reducing the waveguide width of the waveguide, for example, by orienting the waveguide channel parallel or substantially parallel to the waveguide length of the waveguide, so that the waveguide width does not need to include all or most of the channel length. Accordingly, in the embodiments, by reducing the size of the waveguide and / or the substrate or layer on which the waveguide is located, the manufacturing cost of the waveguide, the substrate and / or layer on which the waveguide is located, and / or the source circuit board, antenna package, and / or integrated digital RF circuit system in which the substrate and / or layer is a component can be reduced.

[0059] Another advantage of the present disclosure is that, in the embodiments, an integrated digital RF circuit system comprising an antenna package and a source circuit board having an embodiment of the waveguide channel described herein can be manufactured without soldering the source circuit board to the antenna package. Accordingly, in the embodiments, the integrated digital RF circuit system described herein can reduce the stress experienced by the integrated digital RF circuit system (e.g., caused by thermal expansion caused by soldering the antenna package to the source circuit board) and / or provide greater flexibility in the selection of materials for forming the source circuit board, the antenna package, and / or any component of the source circuit board and / or the antenna package (e.g., compared to an alternative circuit system having an antenna package soldered to the circuit board).

[0060] Another advantage of the present disclosure is that, in the embodiments, the integrated digital RF circuit system described herein may not require a layer located between the antenna package and the source circuit board of the integrated digital RF circuit system, for example, because the source circuit board has an embodiment of the waveguide channel described herein and / or the source circuit board is not soldered to the antenna layer. Accordingly, the integrated digital RF circuit system described herein may include fewer components than, for example, an alternative circuit system, and thus, the cost and / or complexity of manufacturing, for example, the embodiment of the integrated digital RF circuit system described herein may be reduced.

[0061] In this document, a range may be expressed as "about" from one specific value and / or "about" from another specific value. Where such a range is expressed, another embodiment includes from one specific value and / or from another specific value. Similarly, where a value is expressed as an approximation by the use of the preceding word "about," it will be understood that the specific value constitutes another embodiment. It will be further understood that the endpoint of each range is important both in relation to and independently of the other endpoint.

[0062] Directional terms used herein, such as up, down, left, right, front, rear, top, and bottom, are based solely on the illustrated drawings and are not intended to imply absolute orientation.

[0063] Unless otherwise explicitly stated, any method presented herein is not intended to be interpreted as requiring the steps to be performed in a specific order, or as requiring a specific orientation for any device. Accordingly, where a method claim does not actually describe the order to be followed by the steps, where any device claim does not actually describe the order or orientation for individual components, where the claims or description do not specifically state that the steps must be limited to a specific order, or where a specific order or orientation for the components of the device is not described, it is not intended in any way to infer an order or orientation. This applies to any possible non-explicit grounds for interpretation, including logical matters concerning the arrangement of steps, flow of operation, order of components, or orientation of components; ordinary meaning derived from grammatical construction or punctuation; and the number or type of embodiments described in the specification.

[0064] As used herein, the singular forms "one (a, an)" and "the" include multiple referents unless the context clearly indicates otherwise. Thus, for example, a reference to a "one" component includes a mode having two or more such components unless the context clearly indicates otherwise.

[0065] Now, referring to the drawings, in FIG. 1, an integrated digital RF circuit system (100) includes a source circuit board (110) and an antenna package (120). In an embodiment, the source circuit board (110) may be a printed circuit board ("PCB"). In the embodiment of FIG. 1, the source circuit board (110) includes a circuit board lower layer (200) and a circuit board upper layer (300). However, in other embodiments, the source circuit board (110) may include only one layer, three layers, four layers, or even five or more layers. In the embodiment of FIG. 1, the antenna package (120) includes a waveguide layer (400), a spacer layer (450), and an antenna layer (500).

[0066] In the embodiment of FIG. 1, the antenna package (120) may be attached to the rear side (114) of the source circuit board (110) (defined by the upper layer (300) of the circuit board in the embodiment of FIG. 1). Also, in the embodiment of FIG. 1, the layers (400, 450, 500) may all be attached sequentially such that the spacer layer (450) is positioned between the waveguide layer (400) and the antenna layer (500). Accordingly, in the embodiment of FIG. 1, when the integrated digital RF circuit system (100) is fully assembled (e.g., by attaching an antenna package (120) to a source circuit board (110)), the waveguide layer (400) may be located between the spacer layer (450) and the rear side (114) of the source circuit board (110), and the antenna layer (500) may be the distal-most layer among the layers (400, 450, 500) with respect to the source circuit board (110). In the embodiment, the circuit board upper layer (300) may be attached to the circuit board lower layer (200), so that the circuit board lower layer (200) defines the front side (112) of the source circuit board (110) opposite to the rear side (114).

[0067] In the embodiments, the circuit board layers (200, 300) may be attached by an adhesive (e.g., organic adhesive), soldering, room temperature laser welding, laser sintering, optical contact (e.g., wrapping), thermal diffusion bonding between metal layers, and / or any other attachment mechanism known in the art. In the embodiments where the circuit board layers (200, 300) are attached by an adhesive, the adhesive may be applied by a roller, inkjet, spray, pre-cut adhesive film, or any combination thereof.

[0068] In the embodiments, any one, part or all of the layers (400, 450, 500) may be attached by an adhesive (e.g., organic adhesive), soldering, room temperature laser welding, laser sintering, optical contact (e.g., ringing), thermal diffusion bonding between metal layers, and / or any other attachment mechanism known in the art. In the embodiments where any one, part or all of the layers (400, 450, 500) are attached by an adhesive, the adhesive may be applied by, in the embodiments, a roller, inkjet, spray, pre-cut adhesive film, or any combination thereof.

[0069] In an embodiment, the source circuit board (110) and the antenna package (120) may be attached by an adhesive (e.g., organic adhesive), soldering, room temperature laser welding, laser sintering, optical contact (e.g., ringing), thermal diffusion bonding between metal layers, and / or any other attachment mechanism known in the art. In an embodiment where the source circuit board (110) and the antenna package (120) are attached by an adhesive, the adhesive may be applied by a roller, inkjet, spray, pre-cut adhesive film, or any combination thereof.

[0070] In an embodiment, the integrated digital RF circuit system (100) may be used for communication applications for, for example, 3rd generation (3G), 4th generation (4G), 5th generation (5G), and / or 6th generation (6G) mobile communication network technologies and LTE (long term evolution) technologies, Bluetooth communication, Near Field Communication (NFC), Radio Frequency Identification (RFID) signals, Satellite Positioning System (GPS) signals, inter-satellite communication, radar, and other radio frequency applications. Accordingly, in an embodiment, the antenna layer (500) may include an antenna element (e.g., depicted as an antenna element (510) in FIG. 5 and described in more detail below) configured to transmit and / or receive an RF signal (e.g., as an electromagnetic wave which may be a microwave or a millimeter wave in the embodiment). In an embodiment, the antenna layer (500) may be configured to accordingly propagate and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and / or receive an electromagnetic signal to and the source circuit board (110) may be electrically coupled to an antenna package (120).

[0071] In an embodiment, any one, part or all of the source circuit board (110), the circuit board lower layer (200), and / or the circuit board upper layer (300) may be formed partially or wholly from one or more dielectric materials. In an embodiment, the dielectric material forming part or whole of any one or all of the source circuit board (110), the circuit board lower layer (200), and / or the circuit board upper layer (300) may include glass (in an embodiment, any one or all of lithium potassium borosilicate glass, silica glass, ion exchange glass, and / or inorganic glass), ceramic (in an embodiment, any one or all of polycrystalline ceramic, polycrystalline inorganic material, polycrystalline aluminum oxide, alumina, and / or silica), glass-ceramic (in an embodiment, Corning 9606® cordierite glass-ceramic), polymer (in an embodiment, polycarbonate, ceramic-filled PTFE composite, and / or Topas®), polycrystalline ceramic, single-crystal ceramic (in an embodiment, sapphire), and / or any combination thereof. In an embodiment, the dielectric material forming part or all of any one, part or all of the source circuit board (110), the circuit board lower layer (200), and / or the circuit board upper layer (300) may include an organic material and / or an inorganic material. In an embodiment, any one, part or all of the source circuit board (110), the circuit board lower layer (200), and / or the circuit board upper layer (300) may be formed part or all of a plurality of dielectric materials, and in this particular embodiment, the plurality of dielectric materials may include a plurality of organic materials, a plurality of inorganic materials, and / or any combination of one or more organic materials and one or more inorganic materials.In an embodiment in which any one, part or all of the source circuit board (110), circuit board lower layer (200), and / or circuit board upper layer (300) is formed partially or wholly from a plurality of dielectric materials, the plurality of dielectric materials may form individual layers of any one, part or all of the source circuit board (110), circuit board lower layer (200), and / or circuit board upper layer (300). In an embodiment, one or more laminates may be applied to any one, part or all of the source circuit board (110), circuit board lower layer (200), and / or circuit board upper layer (300) to reduce the dielectric constant of, for example, the source circuit board (110), circuit board lower layer (200), and / or circuit board upper layer (300).

[0072] In the embodiments, the spacer layer (450) may be formed from a dielectric material, such as glass (in the embodiments, any one or all of lithium potassium borosilicate glass, silica glass, and / or inorganic glass), ceramic (in the embodiments, any one or all of polycrystalline ceramic, polycrystalline inorganic material, polycrystalline aluminum oxide, alumina, and / or silica), glass-ceramic (in the embodiments, Corning 9606® cordierite glass-ceramic), polymer (in the embodiments, polycarbonate, ceramic-filled PTFE composite, and / or Topas®), polycrystalline ceramic, single-crystal ceramic (in the embodiments, sapphire), and / or any combination thereof. In the embodiments, the spacer layer (450) may be formed from an adhesive. In the embodiments, the spacer layer (450) may be formed from an adhesive comprising an organic adhesive and / or an inorganic adhesive. In an embodiment, the spacer layer (450) may be formed with an adhesive containing glass beads. In an embodiment, the antenna layer (500) may be formed with the same dielectric material(s) as any one, part or all of the source circuit board (110), circuit board lower layer (200), circuit board upper layer (300), waveguide layer (400), and / or antenna layer (500), which may reduce the warping of the integrated digital RF circuit system (100) in the embodiment.

[0073] In an example, the antenna layer (500) may be formed from a dielectric material, such as glass (in an example, including one or all of lithium potassium borosilicate glass, silica glass, and / or inorganic glass), ceramic (in an example, including one or all of polycrystalline ceramic, polycrystalline inorganic material, polycrystalline aluminum oxide, alumina, and / or silica), glass-ceramic (in an example, including Corning 9606® cordierite glass-ceramic), polymer (in an example, including polycarbonate, ceramic-filled PTFE composite, and / or Topas®), polycrystalline ceramic, single-crystal ceramic (in an example, including sapphire), and / or any combination thereof. In an embodiment, the antenna layer (500) may be formed of the same dielectric material(s) as any one, part or all of the source circuit board (110), circuit board lower layer (200), circuit board upper layer (300), waveguide layer (400), and / or spacer layer (450), which may reduce the bending of the integrated digital RF circuit system (100) in the embodiment.

[0074] In an embodiment, the spacer layer (450) can be positioned between the antenna layer (500) and the waveguide layer (400) by attaching the waveguide layer (400) to the spacer layer (450) and attaching the antenna layer (500) to the spacer layer (450) on the opposite side of the waveguide layer (400) of the spacer layer (450). By positioning the spacer layer (450) between the antenna layer (500) and the waveguide layer (400), the spacer layer (450) can create a resonant structure, thereby enabling the waveguide layer (400) to propagate electromagnetic waves from the source circuit board (110) to the antenna layer (500) (e.g., through the waveguide layer (400)) and / or from the antenna layer (500) to the source circuit board (110) (e.g., through the waveguide layer (400)). However, in the embodiment, to propagate electromagnetic waves between the source circuit board (110) and the waveguide layer (400), a connection mechanism may advantageously be included between them to minimize electrical loss of electromagnetic waves between the source circuit board (110) and the waveguide layer (400).

[0075] In the embodiment, a specific application of the integrated digital RF circuit system (e.g., in the embodiment, the integrated digital RF circuit system (100)) may desire a minimization of size defined by, for example, the length of the integrated digital RF circuit system (100), the source circuit board (110), and / or the antenna package (120) (e.g., measured in the x-direction of FIG. 1), the width of the integrated digital RF circuit system (100), the source circuit board (110), and / or the antenna package (120) (e.g., measured in the y-direction of FIG. 1), and / or the thickness of the integrated digital RF circuit system (100), the source circuit board (110), and / or the antenna package (120) (e.g., measured in the z-direction of FIG. 1). Accordingly, in the embodiment, it may be desired to reduce the size of the connection mechanism between the source circuit board (110) and the waveguide layer (400).

[0076] In the embodiments, any one, part or all of the source circuit board (110) and antenna package (120), and / or any one, part or all of the layers (200, 300, 400, 450, 500) may include components that are not described herein but are nevertheless easily understood by those skilled in the art.

[0077] Referring to FIGS. 2a and 2b, the first base substrate (250) may be attached to one side of the circuit board lower layer (200) closest to the rear side (114) of the source circuit board (110). In the embodiment of FIGS. 2a and 2b, the first base substrate (250) may be separated from the circuit board lower layer (200) (and, for example, may be attached to the circuit board lower layer (200)). However, in another embodiment, the first base substrate (250) may form the circuit board lower layer (200) entirely.

[0078] The first base substrate (250) includes a first substrate integrated waveguide ("SIW") (260), and source electromagnetic wave transmission elements (261) are positioned between each via (262) of the first SIW (260) (e.g., depicted in FIG. 3c and described in more detail below). In an embodiment, each of the source electromagnetic wave transmission elements (261) can propagate and / or receive electromagnetic waves (e.g., guided by the first SIW (260)) to and / or from another electromagnetic wave transmission element, e.g., an electromagnetic wave transmission element of the antenna package (120) (e.g., the first electromagnetic wave transmission element (421a) depicted in FIG. 4a and 4b and described in more detail below). Accordingly, in the embodiment, the source electromagnetic wave transmission element (261) may include, for example, a grounded coplanar waveguide, a microstrip transmission line, a patch element (e.g., a patch antenna), a slot antenna, an RF chip, or any combination thereof.

[0079] In the embodiments of FIG. 2a and 2b, the first base substrate (250) comprises seven first SIWs (260). However, in other embodiments, the first base substrate (250) may comprise any plurality of first SIWs (260), including two first SIWs (260), three first SIWs (260), or even four or more first SIWs (260). In an embodiment, the first base substrate (250) may comprise only one first SIW (260).

[0080] In an embodiment, the first base substrate (250) may be attached to the circuit board sublayer (200) and / or the source circuit board (110) by an adhesive (e.g., organic adhesive), soldering, room temperature laser welding, laser sintering, optical contact (e.g., ringing), thermal diffusion bonding between metal layers, and / or any other attachment mechanism known in the art. In an embodiment where the first base substrate (250) and the source circuit board (110) or the circuit board sublayer (200) are attached by an adhesive, the adhesive may be applied by, in the embodiment, a roller, inkjet, spray, pre-cut adhesive film, or any combination thereof.

[0081] In an embodiment, the first base substrate (250) may be formed partially or wholly from one or more dielectric materials. In an embodiment, the dielectric material forming the first base substrate (250) partially or wholly may include glass (in an embodiment, any one or all of lithium potassium borosilicate glass, silica glass, ion exchange glass, and / or inorganic glass, in part or all of), ceramic (in an embodiment, any one or all of polycrystalline ceramic, polycrystalline inorganic material, polycrystalline aluminum oxide, alumina, and / or silica, in part or all of), glass-ceramic (in an embodiment, Corning 9606® cordierite glass-ceramic), polymer (in an embodiment, polycarbonate, ceramic-filled PTFE composite, and / or Topas®), polycrystalline ceramic, single-crystal ceramic (in an embodiment, sapphire), and / or any combination thereof. In an embodiment, the dielectric material forming the first base substrate (250) partially or wholly may include an organic material and / or an inorganic material. In an embodiment, the first base substrate (250) may be formed partially or wholly from a plurality of dielectric materials, and in this particular embodiment, the plurality of dielectric materials may include a plurality of organic materials, a plurality of inorganic materials, and / or any combination of one or more organic materials and one or more inorganic materials. In an embodiment where the first base substrate (250) is formed partially or wholly from a plurality of dielectric materials, the plurality of dielectric materials may form individual layers of the first base substrate (250). In an embodiment, one or more laminates may be applied to the first base substrate (250) to reduce, for example, the dielectric constant of the first base substrate (250).

[0082] Referring to FIGS. 2c through 2d, in an embodiment, the front side (112) of the circuit board lower layer (200) comprises an integrated circuit (270) (e.g., a microchip or other similar structure known in the art). In an embodiment, the integrated circuit (270) may be electrically coupled to a microstrip transmission line (271), and each of the microstrip transmission lines (271) may be electrically coupled to one of the source electromagnetic wave transmission elements (261), so that electromagnetic waves may be propagated and / or received from each of the source electromagnetic wave transmission elements (261) through each of the first SIWs (260). In an embodiment, instead of having a microstrip transmission line (271), the integrated circuit (270) may be electrically coupled to the source electromagnetic wave transmission element (261) by another mechanism, such as a grounded coplanar waveguide.

[0083] Referring to FIGS. 3a and 3b, the circuit board upper layer (300) defines a waveguide channel (310) (i.e., the circuit board upper layer (300) forms a waveguide channel (310) as a gap within the circuit board upper layer (300)). In an embodiment, each of the waveguide channels (310) may be positioned such that when the circuit board layers (200, 300) are attached, each of the waveguide channels (310) is positioned around each of the source electromagnetic wave transmission elements (261). Accordingly, in the embodiment, the waveguide channel (310) can function as a connection mechanism (e.g., a coupler) capable of electrically coupling the source electromagnetic wave transmission element (261) to another electromagnetic wave transmission element, such as the electromagnetic wave transmission element of the antenna package (120) (e.g., the first package electromagnetic wave transmission element (421A) depicted in FIG. 4a and 4b and described in more detail below), so that the source electromagnetic wave transmission element (261) can propagate and / or receive electromagnetic waves to and / or from this other electromagnetic wave transmission element. Accordingly, such electromagnetic waves can be radiated through the waveguide channel (310) between the source electromagnetic wave transmission element (261) and this other electromagnetic wave transmission element, and the waveguide channel (310) thus guides such electromagnetic waves, thereby reducing electrical loss of electromagnetic waves, for example, between the source electromagnetic wave transmission element (261) and this other electromagnetic wave transmission element. Accordingly, the waveguide channel (310) can function as a waveguide for electromagnetic waves between the source electromagnetic wave transmission element (261) and another electromagnetic wave transmission element.

[0084] In an embodiment, the waveguide channel (310) may be a hollow waveguide. In an embodiment, the waveguide channel (310) may be a rectangular or substantially rectangular waveguide (described in more detail below in relation to FIG. 3c). In an embodiment, the waveguide channel (310) may be a gap within the circuit board upper layer (300). In an embodiment, the circuit board upper layer (300) may include metal plating around the walls of the waveguide channel (310). In an embodiment, the waveguide channel (310) may be a milled slot within the circuit board upper layer (300).

[0085] Referring to FIG. 3c, one exemplary first SIW (260) on the rear side (114) of the first base substrate (250) may be defined by a via (262), the via (262) comprises a first plurality of vias (262A) (e.g., arranged linearly in a first row) and a second plurality of vias (262B) (e.g., arranged linearly in a second row), wherein the first plurality of vias (262A) and the second plurality of vias (262B) define an internal gap (w) between the inner edges of the plurality of vias (262A, 262B). In an embodiment, each of the first SIWs (260) of FIG. 2a and FIG. 2b may be substantially similar to the exemplary first SIW (260) depicted in FIG. 3c. However, as described elsewhere in this invention, any one, part or all of the first SIWs (260) of FIGS. 2a and 2b may differ from the exemplary first SIW (260) depicted in FIG. 3c, for example, having a different number of vias (262), having a different number of source electromagnetic wave transmission elements (261) located between the vias (262), and / or in other embodiments as described elsewhere in this invention. In an embodiment, any one, part or all of the vias (262) may extend at least partially through the first base substrate (250). In an embodiment, any one, part or all of the vias (262) may extend entirely through the first base substrate (250). In the embodiment of FIG. 3c, the vias (262) are arranged in two rows (e.g., a first plurality of vias (262A) and a second plurality of vias (262B)). However, in other embodiments, the vias (262) may be arranged in any number of rows, including, in the embodiment, three rows, four rows, or even five or more rows. In the embodiment of FIG. 3c, the first SIW (260) includes 27 vias.However, in another embodiment, the first SIW (260) may instead include more than 10 vias (262), more than 100 vias (262), more than 250 vias (262), more than 500 vias (262), or even more than 1,000 vias (262).

[0086] In the embodiments of FIGS. 2a through 2b and FIG. 3c, each of the first SIWs (260) has only one source electromagnetic wave transmission element (261) located between each of the vias (262) of the first SIWs (260). However, in other embodiments, any one, some or all of the first SIWs (260) may have a plurality of source electromagnetic wave transmission elements (261) located between each of the vias (262) of the first SIWs (260). In an embodiment, any one, some or all of the first SIWs (260) may have a different number of source electromagnetic wave transmission elements (261) located between each of the vias (262) of the first SIWs (260).

[0087] In an embodiment, the first SIW (260) may be configured to propagate and / or propagate an electromagnetic wave including a frequency (f) and a vacuum wavelength (λ). In an embodiment, the first SIW (260) may be configured to propagate and / or propagate an electromagnetic wave along and / or parallel to a first waveguide length (l) between each of a plurality of vias (262A, 262B), wherein the first waveguide length (l) of the first SIW (260) extends along the direction of propagation of the electromagnetic wave through the first SIW (260). In an embodiment having more than two rows of vias (262), each additional row of vias (262) may further define an additional waveguide through which additional electromagnetic waves can be propagated.

[0088] In the embodiments, the frequency (f) of the electromagnetic wave may be 100 MHz (megahertz) or higher, 300 MHz or higher, 3 GHz (gigahertz) or higher, 30 GHz or higher, 50 GHz or higher, 100 GHz or higher, 200 GHz or higher, or even 300 GHz or higher. In the embodiments, the frequency (f) of the electromagnetic wave may be 400 GHz or lower, 300 GHz or lower, 200 GHz or lower, 100 GHz or lower, 50 GHz or lower, 30 GHz or lower, 3 GHz or lower, or even 300 MHz or lower. In the embodiments, the frequency (f) of the electromagnetic wave may be 100 MHz or higher and 400 GHz or lower. In the embodiments, the frequency (f) of the electromagnetic wave may be 100 MHz or higher and 300 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 100 MHz or more and 200 GHz or less. In an example, the frequency (f) of the electromagnetic wave may be 100 MHz or more and 100 GHz or less. In an example, the frequency (f) of the electromagnetic wave may be 100 MHz or more and 50 GHz or less. In an example, the frequency (f) of the electromagnetic wave may be 100 MHz or more and 30 GHz or less. In an example, the frequency (f) of the electromagnetic wave may be 100 MHz or more and 3 GHz or less. In an example, the frequency (f) of the electromagnetic wave may be 100 MHz or more and 300 GHz or less. In an example, the frequency (f) of the electromagnetic wave may be 300 MHz or more and 400 GHz or less. In an example, the frequency (f) of the electromagnetic wave may be 300 MHz or more and 300 GHz or less. In an embodiment, the frequency (f) of the electromagnetic wave may be 300 MHz or higher and 200 GHz or lower. In an embodiment, the frequency (f) of the electromagnetic wave may be 300 MHz or higher and 100 GHz or lower. In an embodiment, the frequency (f) of the electromagnetic wave may be 300 MHz or higher and 50 GHz or lower. In an embodiment, the frequency (f) of the electromagnetic wave may be 300 MHz or higher and 30 GHz or lower.In an example, the frequency (f) of the electromagnetic wave may be 300 MHz or higher and 3 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 3 GHz or higher and 400 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 3 GHz or higher and 300 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 3 GHz or higher and 200 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 3 GHz or higher and 100 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 3 GHz or higher and 50 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 3 GHz or higher and 30 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 30 GHz or higher and 400 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 30 GHz or higher and 300 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 30 GHz or higher and 200 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 30 GHz or higher and 100 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 30 GHz or higher and 50 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 50 GHz or higher and 400 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 50 GHz or higher and 300 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 50 GHz or higher and 200 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 50 GHz or higher and 100 GHz or lower. In an example, the frequency (f) of the electromagnetic wave may be 100 GHz or higher and 400 GHz or lower. In an embodiment, the frequency (f) of the electromagnetic wave may be 100 GHz or higher and 300 GHz or lower. In an embodiment, the frequency (f) of the electromagnetic wave may be 100 GHz or higher and 200 GHz or lower. In an embodiment, the frequency (f) of the electromagnetic wave may be 200 GHz or higher and 400 GHz or lower.In the embodiments, the frequency (f) of the electromagnetic wave may be 200 GHz or higher and 300 GHz or lower. In the embodiments, the frequency (f) of the electromagnetic wave may be 300 GHz or higher and 400 GHz or lower. In the embodiments, the frequency (f) of the electromagnetic wave may be within any other range within the above-described range, for example, in the embodiments, it may be 75 GHz or higher and 84 GHz or lower.

[0089] In the embodiments, the vacuum wavelength (λ) of the electromagnetic wave may be 1 μm or more, 1 mm (millimeter) or more, 10 mm or more, 50 mm or more, or even 1 cm (centimeter) or more. In the embodiments, the vacuum wavelength (λ) of the electromagnetic wave may be 10 cm or less, 1 cm or less, 50 mm or less, 10 mm or less, or even 1 mm or less. In the embodiments, the vacuum wavelength (λ) of the electromagnetic wave may be 1 μm or more and 10 cm or less. In the embodiments, the vacuum wavelength (λ) of the electromagnetic wave may be 1 μm or more and 1 cm or less. In the embodiments, the vacuum wavelength (λ) of the electromagnetic wave may be 1 μm or more and 50 mm or less. In the embodiments, the vacuum wavelength (λ) of the electromagnetic wave may be 1 μm or more and 10 mm or less. In the embodiments, the vacuum wavelength (λ) of the electromagnetic wave may be 1 μm or more and 1 mm or less. In the embodiments, the vacuum wavelength (λ) of the electromagnetic wave may be 1 mm or more and 10 cm or less. In the embodiments, the vacuum wavelength (λ) of the electromagnetic wave may be 1 mm or more and 10 cm or less. In the embodiments, The vacuum wavelength (λ) of the electromagnetic wave may be 1 mm or more and 1 cm or less. In an example, the vacuum wavelength (λ) of the electromagnetic wave may be 1 mm or more and 50 mm or less. In an example, the vacuum wavelength (λ) of the electromagnetic wave may be 1 mm or more and 10 mm or less. In an example, the vacuum wavelength (λ) of the electromagnetic wave may be 10 mm or more and 10 cm or less. In an example, the vacuum wavelength (λ) of the electromagnetic wave may be 10 mm or more and 1 cm or less. In an example, the vacuum wavelength (λ) of the electromagnetic wave may be 10 mm or more and 50 mm or less. In an example, the vacuum wavelength (λ) of the electromagnetic wave may be 50 mm or more and 10 cm or less. In an example, the vacuum wavelength (λ) of the electromagnetic wave may be 50 mm or more and 1 cm or less. In an example, the vacuum wavelength (λ) of the electromagnetic wave may be 1 cm or more and 10 cm or less. In an example, the vacuum wavelength (λ) of the electromagnetic wave may be within any other range within the above-described range.

[0090] Referring further to FIG. 3c, in an embodiment, vias (262) define a via spacing (p) (e.g., the pitch of the first SIW (260)), which is the distance between each via of the vias (262) and each via of the same row (e.g., the first plurality of vias (262A) or the second plurality of vias (262B)) adjacent to the via of the vias (262). For example, the via spacing (p) may be the distance between the center of a via in the same row and the center of an adjacent via (e.g., the center-to-center distance). In an embodiment, the via spacing (p) may be substantially constant between distinct rows of vias. For example, in the embodiment of FIG. 3c, the via spacing (p) defined by the first plurality of vias (262A) may be substantially the same as the via spacing (p) defined by the second plurality of vias (262B). However, in other embodiments, the via spacing (p) may not be substantially constant across distinct rows of vias. For example, in an embodiment, the first plurality of vias (262A) may define a via spacing (p) of a different length than the via spacing (p) defined by the second plurality of vias (262B). Also, in an embodiment (e.g., as depicted in FIGS. 2a through 2d), the via spacing (p) of the vias of other SIWs of the first SIW (260) may differ between these SIWs of the first SIW (260).

[0091] In the examples, the via spacing (p) may be 50 μm or more, 100 μm or more, 250 μm or more, 500 μm or more, or even 750 μm or more. In the examples, the via spacing (p) may be 1 mm or less, 750 μm or less, 500 μm or less, 250 μm or less, or even 100 μm or less. In the examples, the via spacing (p) may be 50 μm or more and 1 mm or less. In the examples, the via spacing (p) may be 50 μm or more and 750 μm or less. In the examples, the via spacing (p) may be 50 μm or more and 500 μm or less. In the examples, the via spacing (p) may be 50 μm or more and 250 μm or less. In the examples, the via spacing (p) may be 50 μm or more and 100 μm or less. In the examples, the via spacing (p) may be 100 μm or more and 1 mm or less. In the examples, the via spacing (p) may be 100 μm or more and 750 μm or less. In the examples, the via spacing (p) may be 100 μm or more and 500 μm or less. In the examples, the via spacing (p) may be 100 μm or more and 250 μm or less. In the examples, the via spacing (p) may be 250 μm or more and 1 mm or less. In the examples, the via spacing (p) may be 250 μm or more and 750 μm or less. In the examples, the via spacing (p) may be 250 μm or more and 500 μm or less. In the examples, the via spacing (p) may be 500 μm or more and 1 mm or less. In the examples, the via spacing (p) may be 500 μm or more and 750 μm or less. In the examples, the via spacing (p) may be 750 μm or more and 1 mm or less. In the examples, the via spacing (p) may be within any other range of the above-described ranges.

[0092] Referring further to FIG. 3c, in an embodiment, a via (262) defines a first waveguide width (a) of a first SIW (260), wherein the first waveguide width (a) of the first SIW (260) is the distance between the centers of the vias of adjacent rows (e.g., the distance between the center of a via of a first plurality of vias (262A) and the center of an adjacent via of a second plurality of vias (262B). For example, the waveguide width (a) may be the distance between the axis of one row of vias (e.g., a line passing through the center of each via within the row of vias) and the axis of the row of adjacent vias. Thus, in an embodiment, the first waveguide width (a) of the first SIW (260) separates the first plurality of vias (262A) from the second plurality of vias (262B). In an embodiment, the waveguide width (a) of the other SIWs of the first SIW (260) (e.g., as depicted in FIGS. 2a to 2d) may differ between these SIWs of the first SIW (260).

[0093] In an embodiment, the first waveguide width (a) of the first SIW (260) may be substantially equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW (260). In an embodiment, the first waveguide width (a) of the first SIW (260) may be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW (260) minus 0.05 mm, and less than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW (260) plus 0.05 mm. In an embodiment, the first waveguide width (a) of the first SIW (260) may be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW (260) minus 0.1 mm, and less than or equal to half the vacuum wavelength (λ) plus 0.1 mm. In an embodiment, the first waveguide width (a) of the first SIW (260) may be greater than or equal to half of the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW (260) minus 0.15 mm, and less than or equal to half of the vacuum wavelength (λ) plus 0.15 mm. In an embodiment, the first waveguide width (a) of the first SIW (260) may be greater than or equal to half of the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW (260) minus 0.2 mm, and less than or equal to half of the vacuum wavelength (λ) plus 0.2 mm. In an embodiment, the first waveguide width (a) of the first SIW (260) may be greater than or equal to half of the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW (260) minus 0.25 mm, and less than or equal to half of the vacuum wavelength (λ) plus 0.25 mm. In an embodiment, the first waveguide width (a) of the first SIW (260) may be within any other range of the above-described ranges.

[0094] In an embodiment, the first waveguide width (a) of the first SIW (260) may be 0.1 mm or more, 0.5 mm or more, 1 mm or more, 2.5 mm or more, or even 5 mm or more. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 10 mm or less, 5 mm or less, 2.5 mm or less, 1 mm or less, or even 0.5 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 0.1 mm or more and 10 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 0.1 mm or more and 5 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 0.1 mm or more and 2.5 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 0.1 mm or more and 1 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 0.1 mm or more and 0.5 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 0.5 mm or more and 10 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 0.5 mm or more and 5 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 0.5 mm or more and 2.5 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 0.5 mm or more and 1 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 1 mm or more and 10 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 1 mm or more and 5 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 1 mm or more and 2.5 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 2.5 mm or more and 10 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) is 2.It may be 5 mm or more and 5 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be 2.5 mm or more and 5 mm or less. In an embodiment, the first waveguide width (a) of the first SIW (260) may be within any other range of the above-described ranges.

[0095] Referring further to FIG. 3c, in an embodiment, each of the vias (262) includes a via diameter (d). In an embodiment, the via diameter (d) may be substantially constant for each of the vias (262). In an embodiment, the via diameter (d) may differ between any one, some, or all of the vias (262). In an embodiment, the via diameter (d) may be substantially the same for vias in distinct rows of vias. For example, in an embodiment of FIG. 3c, the via diameter (d) of the via (262) of the first plurality of vias (262A) may be substantially the same as the via diameter (d) of the via (262) of the second row of vias (262B). However, in other embodiments, the via diameter (d) may not be substantially the same for vias in distinct rows of vias. For example, the via diameter (d) of the via (262) of the first plurality of vias (262A) may be different from the via diameter (d) of the via (262) of the second plurality of vias (262B). Also, in the embodiment, the via diameter (d) of the vias of other SIWs of the first SIW (260) (e.g., depicted in FIGS. 2a to 2d) may be different between these SIWs of the first SIW (260).

[0096] In the examples, the via diameter (d) may be 1 μm or more, 10 μm or more, 25 μm or more, 50 μm or more, 75 μm or more, 100 μm or more, or even 250 μm or more. In the examples, the via diameter (d) may be 500 μm or less, 250 μm or less, 100 μm or less, 75 μm or less, 50 μm or less, 25 μm or less, or even 10 μm or less. In the examples, the via diameter (d) may be 1 μm or more and 500 μm or less. In the examples, the via diameter (d) may be 1 μm or more and 250 μm or less. In the examples, the via diameter (d) may be 1 μm or more and 100 μm or less. In the examples, the via diameter (d) may be 1 μm or more and 75 μm or less. In the examples, the via diameter (d) may be 1 μm or more and 50 μm or less. In the examples, the via diameter (d) may be 1 μm or more and 25 μm or less. In the examples, the via diameter (d) may be 1 μm or more and 10 μm or less. In the examples, the via diameter (d) may be 10 μm or more and 500 μm or less. In the examples, the via diameter (d) may be 10 μm or more and 250 μm or less. In the examples, the via diameter (d) may be 10 μm or more and 100 μm or less. In the examples, the via diameter (d) may be 10 μm or more and 75 μm or less. In the examples, the via diameter (d) may be 10 μm or more and 50 μm or less. In the examples, the via diameter (d) may be 10 μm or more and 25 μm or less. In the examples, the via diameter (d) may be 25 μm or more and 500 μm or less. In the examples, the via diameter (d) may be 25 μm or more and 250 μm or less. In the examples, the via diameter (d) may be 25 μm or more and 100 μm or less. In the examples, the via diameter (d) may be 25 μm or more and 75 μm or less. In the examples, the via diameter (d) may be 25 μm or more and 50 μm or less.In the examples, the via diameter (d) may be 50 μm or more and 500 μm or less. In the examples, the via diameter (d) may be 50 μm or more and 250 μm or less. In the examples, the via diameter (d) may be 50 μm or more and 100 μm or less. In the examples, the via diameter (d) may be 50 μm or more and 75 μm or less. In the examples, the via diameter (d) may be 75 μm or more and 500 μm or less. In the examples, the via diameter (d) may be 75 μm or more and 250 μm or less. In the examples, the via diameter (d) may be 75 μm or more and 100 μm or less. In the examples, the via diameter (d) may be 100 μm or more and 500 μm or less. In the examples, the via diameter (d) may be 100 μm or more and 250 μm or less. In the examples, the via diameter (d) may be 250 μm or more and 500 μm or less. In the examples, the via diameter (d) may be within any other range within the ranges described above.

[0097] Referring further to FIG. 3c, each waveguide channel (310) of the first SIW (260) depicted in FIG. 3c is depicted as an overlay. Therefore, since the waveguide channel (310) may not be formed from the first base substrate (250) in the embodiment of FIG. 3c, the waveguide channel (310) is depicted as a dashed line. The waveguide channel (310) may be located around the source electromagnetic wave transmission element (261), so that the waveguide channel (310) extends from the rear side (114) of the source circuit board (110) toward the front side (112) of the source circuit board (110) (e.g., through the circuit board upper layer (300) in the embodiment) so that the waveguide channel (310) extends to the first base substrate (250), thereby guiding electromagnetic waves to and / or from the first SIW (260). However, in the embodiments (e.g., in an embodiment where the source circuit board (110) does not include the circuit board upper layer (300), the waveguide channel (310) may instead be formed with another layer such as the waveguide layer (400) in the embodiments.

[0098] The waveguide channel (310) has a channel length (l c ) and channel width (w c Defines ). In the embodiment of FIG. 3c, the channel length (l c ) is connected parallel to the first waveguide length (l) of the first SIW (260). However, in another embodiment, the channel length (l) c ) can only be extended substantially parallel to the first waveguide length (l) of the first SIW (260). Nevertheless, in the embodiment, importantly, the waveguide channel (310) may be substantially rectangular in shape, and the channel length (l) c ) can be positioned so as not to be substantially perpendicular to the first waveguide length (l) of the first SIW (260). That is, in the embodiment, the channel length (l) c ) is the channel width (w cIt may be larger than ) and may be larger than the first waveguide width (a) of the first SIW (260). However, as described herein, "substantially rectangular shape" should not be interpreted as requiring the waveguide channel (310) to be defined solely by four linear edges. Rather, as can be seen in FIG. 3c, the waveguide channel (310) instead has rounded edges. In this regard, in the embodiment, the shape of the waveguide channel (310) is such that the channel length (l) c ) is the channel width (w c It can only be limited by something greater than ).

[0099] In the example, the channel length (l c ) may be 2 mm or more, 2.2 mm or more, 2.4 mm or more, 2.6 mm or more, 2.8 mm or more, or even 2.9 mm or more. In the example, the channel length (l) c ) may be 4 mm or less, 3.8 mm or less, 3.6 mm or less, 3.4 mm or less, 3.2 mm or less, or even 3.1 mm or less. In the example, the channel length (l c ) may be 2 mm or more and 4 mm or less. In the example, the channel length (l c ) may be 2 mm or more and 3.8 mm or less. In the example, the channel length (l c ) may be 2 mm or more and 3.6 mm or less. In the example, the channel length (l c ) may be 2 mm or more and 3.4 mm or less. In the example, the channel length (l c ) may be 2 mm or more and 3.2 mm or less. In the example, the channel length (l c ) may be 2 mm or more and 3.1 mm or less. In the example, the channel length (l c ) may be 2.2 mm or more and 4 mm or less. In the example, the channel length (l c ) may be 2.2 mm or more and 3.8 mm or less. In the example, the channel length (lc ) may be 2.2 mm or more and 3.6 mm or less. In the example, the channel length (l c ) may be 2.2 mm or more and 3.4 mm or less. In the example, the channel length (l c ) may be 2.2 mm or more and 3.2 mm or less. In the example, the channel length (l c ) may be 2.2 mm or more and 3.1 mm or less. In the example, the channel length (l c ) may be 2.4 mm or more and 4 mm or less. In the example, the channel length (l c ) may be 2.4 mm or more and 3.8 mm or less. In the example, the channel length (l c ) may be 2.4 mm or more and 3.6 mm or less. In the example, the channel length (l c ) may be 2.4 mm or more and 3.4 mm or less. In the example, the channel length (l c ) may be 2.4 mm or more and 3.2 mm or less. In the example, the channel length (l c ) may be 2.4 mm or more and 3.1 mm or less. In the example, the channel length (l c ) may be 2.6 mm or more and 4 mm or less. In the example, the channel length (l c ) may be 2.6 mm or more and 3.8 mm or less. In the example, the channel length (l c ) may be 2.6 mm or more and 3.6 mm or less. In the example, the channel length (l c ) may be 2.6 mm or more and 3.4 mm or less. In the example, the channel length (l c ) may be 2.6 mm or more and 3.2 mm or less. In the example, the channel length (l c ) may be 2.6 mm or more and 3.1 mm or less. In the example, the channel length (l c ) may be 2.8 mm or more and 4 mm or less. In the example, the channel length (l c) may be 2.8 mm or more and 3.8 mm or less. In the example, the channel length (l c ) may be 2.8 mm or more and 3.6 mm or less. In the example, the channel length (l c ) may be 2.8 mm or more and 3.4 mm or less. In the example, the channel length (l c ) may be 2.8 mm or more and 3.2 mm or less. In the example, the channel length (l c ) may be 2.8 mm or more and 3.1 mm or less. In the example, the channel length (l c ) may be 2.9 mm or more and 4 mm or less. In the example, the channel length (l c ) may be 2.9 mm or more and 3.8 mm or less. In the example, the channel length (l c ) may be 2.9 mm or more and 3.6 mm or less. In the example, the channel length (l c ) may be 2.9 mm or more and 3.4 mm or less. In the example, the channel length (l c ) may be 2.9 mm or more and 3.2 mm or less. In the example, the channel length (l c ) may be 2.9 mm or more and 3.1 mm or less. In the example, the channel length (l c ) may be within any other range of the aforementioned ranges.

[0100] In the embodiment, the channel width (w c ) may be 0.5 mm or more, 0.75 mm or more, 1 mm or more, 1.2 mm or more, or even 1.4 mm or more. In the example, the channel width (w c ) may be 2.5 mm or less, 2.25 mm or less, 2 mm or less, 1.8 mm or less, or even 1.6 mm or less. In the example, the channel width (w c ) may be 0.5 mm or more and 2.5 mm or less. In the example, the channel width (w c) may be 0.5 mm or more and 2.25 mm or less. In the example, the channel width (w c ) may be 0.5 mm or more and 2 mm or less. In the example, the channel width (w c ) may be 0.5 mm or more and 1.8 mm or less. In the example, the channel width (w c ) may be 0.5 mm or more and 1.6 mm or less. In the example, the channel width (w c ) may be 0.75 mm or more and 2.5 mm or less. In the example, the channel width (w c ) may be 0.75 mm or more and 2.25 mm or less. In the example, the channel width (w c ) may be 0.75 mm or more and 2 mm or less. In the example, the channel width (w c ) may be 0.75 mm or more and 1.8 mm or less. In the example, the channel width (w c ) may be 0.75 mm or more and 1.6 mm or less. In the example, the channel width (w c ) may be 1 mm or more and 2.5 mm or less. In the example, the channel width (w c ) may be 1 mm or more and 2.25 mm or less. In the example, the channel width (w c ) may be 1 mm or more and 2 mm or less. In the example, the channel width (w c ) may be 1 mm or more and 1.8 mm or less. In the example, the channel width (w c ) may be 1 mm or more and 1.6 mm or less. In the example, the channel width (w c ) may be 1.2 mm or more and 2.5 mm or less. In the example, the channel width (w c ) may be 1.2 mm or more and 2.25 mm or less. In the example, the channel width (w c ) may be 1.2 mm or more and 2 mm or less. In the example, the channel width (w c ) may be 1.2 mm or more and 1.8 mm or less. In the example, the channel width (w c) may be 1.2 mm or more and 1.6 mm or less. In the example, the channel width (w c ) may be 1.4 mm or more and 2.5 mm or less. In the example, the channel width (w c ) may be 1.4 mm or more and 2.25 mm or less. In the example, the channel width (w c ) may be 1.4 mm or more and 2 mm or less. In the example, the channel width (w c ) may be 1.4 mm or more and 1.8 mm or less. In the example, the channel width (w c ) may be 1.4 mm or more and 1.6 mm or less. In the example, the channel width (w c ) may be within any other range of the aforementioned ranges.

[0101] Accordingly, in an embodiment, the waveguide channel (310) may allow the first SIW (260) to have a first waveguide width (a) that is smaller than the alternative potential waveguide width of the alternative potential SIW that can be coupled to a waveguide channel having a channel length that is substantially perpendicular to the waveguide length (l) of the alternative potential SIW. Accordingly, the size of the first SIW (260) may be reduced (e.g., by reducing the first waveguide width (a) of the first SIW (260) to a size within a range such as any one, part or all of the ranges described above). In an embodiment, by reducing the size of the first SIW (260), the size of the first base substrate (250) may also be reduced. In an embodiment, by reducing the size of the first base substrate (250), the cost of manufacturing the first base substrate (250) (and, accordingly, the cost of manufacturing, for example, the source circuit board (110) and / or the circuit board sublayer (200)) can also be similarly reduced. Additionally, in an embodiment, the waveguide channel (310) functions as a waveguide that guides electromagnetic waves to and / or from the first SIW (260), thereby reducing the electrical loss of electromagnetic waves propagated and / or received by the first SIW (260) and / or the source electromagnetic wave transmission element (261). Finally, in the embodiment, since the waveguide channel (310) itself can provide a coupling mechanism between the source circuit board (110) and the antenna package (120), the waveguide channel (310) can enable the manufacturing of an integrated digital RF circuit system (100) without inserting a layer (e.g., a redistribution layer, a connector, or a jumper between the source circuit board (110) and the antenna package (120)) between the source circuit board (110) and the antenna package (120).

[0102] In an embodiment, the waveguide channel (310) may be located at least partially between the first plurality of vias (262A) and the second plurality of vias (262B). In the embodiment of FIG. 3c, the waveguide channel (310) is depicted as being located entirely between the plurality of vias (262A, 262B) (i.e., located within the internal spacing (w)). However, in other embodiments, the waveguide channel (310) may have an alternative size, location, or orientation such that the waveguide channel (310) overlaps with any one, part, or all of the vias (262). In an embodiment, the waveguide channel (310) may be located around the source electromagnetic wave transmission element (261) and the channel length (l) c ) is the channel width (w c It may have any size, position, or orientation to have a size that is greater than ). In the embodiment, the channel width (w c Since the first waveguide length (l) of the first SIW (260) is parallel or substantially parallel, this orientation of the waveguide channel (310) may, in the embodiment, allow the source electromagnetic wave transmission element (261) to also be parallel or substantially parallel to the first waveguide length (l) of the first SIW (260).

[0103] In an embodiment, for propagating electromagnetic waves to and / or from the first SIW (260) and / or source electromagnetic wave transmission element (261) (e.g., compared to an alternative SIW and / or electromagnetic wave transmission element in which the electromagnetic wave transmission element and / or waveguide channel may not be oriented substantially parallel to the first waveguide length (l) of the first SIW (260)), the polarization of the electromagnetic waves propagated or received by the first SIW (260) and / or source electromagnetic wave transmission element (261) may be rotated to take into account the orientation of the source electromagnetic wave transmission element (261) and / or waveguide channel (310). Additionally, in the embodiment, the electromagnetic waves propagated by other SIWs and / or other electromagnetic wave transmission elements and received by the first SIW (260) and / or source electromagnetic wave transmission element (261) may also have their polarization rotated to take into account the orientation of the source electromagnetic wave transmission element (261) and / or waveguide channel (310).

[0104] Referring to FIG. 4a, the waveguide layer (400) includes a second base substrate (410). In an embodiment, the waveguide layer (400) may not include any additional layer or substrate other than the second base substrate (410). However, in other embodiments, the waveguide layer (400) may include additional layers or substrates not depicted in FIG. 4a. For example, in an embodiment, the waveguide layer (400) may define a waveguide channel (310) (i.e., form a waveguide channel (310) as a gap within the waveguide layer (400)) or may include an additional layer defining a waveguide channel (310) (i.e., form a waveguide channel (310) as a gap within an additional layer of the waveguide layer (400)), and in this particular embodiment, the source circuit board (110) may not include a circuit board upper layer (300) or may not define a waveguide channel (310). In an embodiment, the waveguide channel (310) may be a gap within the waveguide layer (400) or the layer of the waveguide layer (400). In an embodiment, the waveguide layer (400) may include a metal plating around the wall of the waveguide channel (310). In an embodiment, the waveguide channel (310) may be a milled slot within the waveguide layer (400).

[0105] The second base substrate (410) includes a second SIW (420). Each of the second SIWs (420) includes, in the embodiment, a first package electromagnetic wave transmission element (421A) capable of transmitting and / or receiving one or more electromagnetic waves to and / or from the source circuit board (110) (e.g., through each of the source electromagnetic wave transmission elements (261)). In the embodiment, the second SIW (420) can transmit and / or receive one or more electromagnetic waves to and / or from each of the first package electromagnetic wave transmission elements (421A) and / or from each of the second package electromagnetic wave transmission elements (421B). Accordingly, the second package electromagnetic wave transmission element (421B) can transmit and / or receive these electromagnetic waves to and / or from another wave transmission element, e.g., an antenna element of the antenna layer (500) (e.g., depicted in FIG. 5 and described in more detail below). Accordingly, the waveguide layer (400), the second SIW (420), and the package electromagnetic wave transmission elements (421A, 421B) in the embodiment may, accordingly, electrically couple any one or all of the source circuit board (110), the integrated circuit (270), the respective SIW of the first SIWs (260), and / or the respective source electromagnetic wave transmission elements (261), thereby enabling one or more electromagnetic waves to be transmitted between them. In the embodiment, the first package electromagnetic wave transmission element (421a) may include, for example, a grounded coplanar waveguide, a microstrip transmission line, a patch element (e.g., a patch antenna), a slot antenna, an RF chip, or any combination thereof. In the embodiment, the second package electromagnetic wave transmission element (421B) may include, for example, a grounded coplanar waveguide, a microstrip transmission line, a patch element (e.g., a patch antenna), a slot antenna, an RF chip, or any combination thereof.

[0106] In the embodiment of FIG. 4a, the second base substrate (410) includes seven second SIWs (420). However, in other embodiments, the second base substrate (410) may include any plurality of second SIWs (420), including two second SIWs (420), three second SIWs (420), or even four or more second SIWs (420). In an embodiment, the second base substrate (410) may include only one second SIW (420). In an embodiment, the second base substrate (410) may include the same number of second SIWs (420) as the number of first SIWs (260) of the first base substrate (260).

[0107] In the embodiment of FIG. 4a, each of the second SIWs (420) includes only one first package electromagnetic wave transmission element (421A) located between each of the vias (422) of the second SIWs (420) (depicted in FIG. 4b and described in more detail below). However, in other embodiments, each of the second SIWs (420) may include a plurality of first package electromagnetic wave transmission elements (421A) located between each of the vias (422) of the second SIWs (420), such as, for example, two first package electromagnetic wave transmission elements (421A), three first package electromagnetic wave transmission elements (421A), or even four or more first package electromagnetic wave transmission elements (421A). In an embodiment, any one, part or all of the second SIWs (420) may have a different number of first package electromagnetic wave transmission elements (421A) located between each of the vias (422) of the second SIWs (420).

[0108] In the embodiment of FIG. 4a, each of the second SIWs (420) includes six second package electromagnetic wave transmission elements (421B) located between each of the vias (422) of the second SIWs (420) (depicted in FIG. 4b and described in more detail below). However, in other embodiments, each of the second SIWs (420) may include any plurality of second package electromagnetic wave transmission elements (421B) located between each of the vias (422) of the second SIWs (420), such as, for example, two second package electromagnetic wave transmission elements (421B), three second package electromagnetic wave transmission elements (421B), or even four or more second package electromagnetic wave transmission elements (421B). In an embodiment, each of the second SIWs (420) may include only one second package electromagnetic wave transmission element (421B) located between each via (422) of the second SIW (420). In an embodiment, any one, part or all of the second SIWs (420) may have a different number of second package electromagnetic wave transmission elements (421B) located between each via (422) of the second SIW (420).

[0109] Accordingly, in the embodiment, each of the waveguide channels (310) may be positioned such that when the source circuit board (110) and the waveguide layer (400) are attached, each of the waveguide channels (310) is positioned around each of the first package electromagnetic wave transmission elements (421A). Accordingly, in the embodiment, the waveguide channel (310) may function as a connection mechanism (e.g., a coupler) capable of electrically coupling the first package electromagnetic wave transmission element (421a) to another electromagnetic wave transmission element, such as the source electromagnetic wave transmission element (261) (e.g., depicted in FIGS. 2a through 3c and described in more detail above), so that the first package electromagnetic wave transmission element (421A) may propagate and / or receive electromagnetic waves to and / or from this other electromagnetic wave transmission element. Accordingly, these electromagnetic waves can be radiated through a waveguide channel (310) between the first package electromagnetic wave transmission element (421A) and this other electromagnetic wave transmission element, and the waveguide channel (310) guides these electromagnetic waves accordingly, thereby reducing electrical loss of the electromagnetic waves, for example, between the first package electromagnetic wave transmission element (421A) and this other electromagnetic wave transmission element. Accordingly, the waveguide channel (310) can function as a waveguide for electromagnetic waves between the first package electromagnetic wave transmission element (421A) and another source electromagnetic wave transmission element.

[0110] In an embodiment, the second base substrate (410) may be formed partially or wholly from one or more dielectric materials. In an embodiment, the dielectric material forming the second base substrate (410) partially or wholly may include glass (in an embodiment, any one or all of lithium potassium borosilicate glass, silica glass, ion exchange glass, and / or inorganic glass, in part or all of), ceramic (in an embodiment, any one or all of polycrystalline ceramic, polycrystalline inorganic material, polycrystalline aluminum oxide, alumina, and / or silica, in part or all of), glass-ceramic (in an embodiment, Corning 9606® cordierite glass-ceramic), polymer (in an embodiment, polycarbonate, ceramic-filled PTFE composite, and / or Topas®), polycrystalline ceramic, single-crystal ceramic (in an embodiment, sapphire), and / or any combination thereof. In an embodiment, the dielectric material forming the second base substrate (410) partially or wholly may include an organic material and / or an inorganic material. In an embodiment, the second base substrate (410) may be formed partially or wholly from a plurality of dielectric materials, and in this particular embodiment, the plurality of dielectric materials may include a plurality of organic materials, a plurality of inorganic materials, and / or any combination of one or more organic materials and one or more inorganic materials. In an embodiment where the second base substrate (410) is formed partially or wholly from a plurality of dielectric materials, the plurality of dielectric materials may form individual layers of the second base substrate (410). In an embodiment, one or more laminates may be applied to the second base substrate (410) to reduce, for example, the dielectric constant of the second base substrate (410).

[0111] Referring to FIG. 4b, one exemplary of the second SIWs (420) may be defined by a via (422), the via (422) comprises a third plurality of vias (422A) (arranged in a first row) and a fourth plurality of vias (422B) (arranged in a second row), wherein the third plurality of vias (422A) and the fourth plurality of vias (422B) define an internal gap (w) between the inner edges of the plurality of vias (422A, 422B). In an embodiment, each of the second SIWs (420) of FIG. 4a may be substantially similar to the exemplary second SIW (420) depicted in FIG. 4b. However, as described elsewhere in this invention, any one, part or all of the second SIWs (420) of FIG. 4a may differ from the exemplary second SIW (420) depicted in FIG. 4b, for example, having a different number of vias (422), having a different number of first package electromagnetic wave transmission elements (421A) located between the vias (422), and / or in other embodiments as described elsewhere in this invention. In an embodiment, any one, part or all of the vias (422) may extend through at least partially the second base substrate (410). In an embodiment, any one, part or all of the vias (422) may extend through the second base substrate (410) entirely. In the embodiment of FIG. 4b, the vias (422) are arranged in two rows (e.g., a third plurality of vias (422A) and a fourth plurality of vias (422B)). However, in other embodiments, the vias (422) may be arranged in any number of rows, including, in the embodiment, three rows, four rows, or even five or more rows. In the embodiment of FIG. 4b, the second SIW (420) includes 27 vias.However, in another embodiment, the second SIW (420) may instead include more than 10 vias (422), more than 100 vias (422), more than 250 vias (422), more than 500 vias (422), or even more than 1,000 vias (422).

[0112] In an embodiment, the second SIW (420) may be configured to propagate and / or propagate an electromagnetic wave including a frequency (f) and a vacuum wavelength (λ), wherein the frequency (f) and the vacuum wavelength (λ) may be within the same range as described above with respect to the frequency and / or vacuum wavelength of the electromagnetic wave propagated by the first SIW (260). In an embodiment, the second SIW (420) may be configured to propagate and / or propagate an electromagnetic wave along and / or parallel thereto a second waveguide length (l) of the second SIW (420) between each of a plurality of vias (422A, 422B), wherein the second waveguide length (l) of the second SIW (420) extends along the direction of propagation of the electromagnetic wave through the second SIW (420). In an embodiment having more than two rows of vias (422), each additional row of vias (422) further defines an additional waveguide through which additional electromagnetic waves may be propagated. It is possible.

[0113] In an embodiment, the via (422) defines a via spacing (p) similar to the via (262) of the first SIW (260). In an embodiment, the via spacing (p) may be substantially constant between distinct rows of vias. For example, in the embodiment of FIG. 4b, the via spacing (p) defined by the third plurality of vias (422A) may be substantially the same as the via spacing (p) defined by the fourth plurality of vias (422B). However, in other embodiments, the via spacing (p) may not be substantially constant across distinct rows of vias. For example, in an embodiment, the third plurality of vias (422A) may define a via spacing (p) of a different length than the via spacing (p) defined by the fourth plurality of vias (422B). Additionally, in the embodiment, the via spacing (p) of the vias of the other SIWs of the second SIW (420) (e.g., as depicted in FIG. 4a) may differ between these SIWs of the second SIW (420). In the embodiment, the via spacing (p) defined by the via (422) may be within the same range as the ranges described above with respect to the via spacing (p) of the first SIW (260).

[0114] In an embodiment, the via (422) defines the second waveguide width (a) of the second SIW (420). Thus, in an embodiment, the second waveguide width (a) of the second SIW (420) separates the third plurality of vias (422A) from the fourth plurality of vias (422B). In an embodiment, the second waveguide width (a) of the second SIW (420) may be substantially equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW (420). Also, in an embodiment, the waveguide width (a) of the other SIWs of the second SIW (420) (e.g., as depicted in FIGS. 2a through 2d) may differ between these SIWs of the second SIW (420). In the embodiment, the second waveguide width (a) of the second SIW (420) may be within the same range as the ranges described above in relation to the first waveguide width (a) of the first SIW (260).

[0115] In an embodiment, the second waveguide width (a) of the second SIW (420) may be substantially equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW (420). In an embodiment, the second waveguide width (a) of the second SIW (420) may be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW (420) minus 0.05 mm, and less than or equal to half the vacuum wavelength (λ) plus 0.05 mm. In an embodiment, the second waveguide width (a) of the second SIW (420) may be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW (420) minus 0.1 mm, and less than or equal to half the vacuum wavelength (λ) plus 0.1 mm. In an embodiment, the second waveguide width (a) of the second SIW (420) may be greater than or equal to half of the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW (420) minus 0.15 mm, and less than or equal to half of the vacuum wavelength (λ) plus 0.15 mm. In an embodiment, the second waveguide width (a) of the second SIW (420) may be greater than or equal to half of the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW (420) minus 0.2 mm, and less than or equal to half of the vacuum wavelength (λ) plus 0.2 mm. In an embodiment, the second waveguide width (a) of the second SIW (420) may be greater than or equal to half of the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW (420) minus 0.25 mm, and less than or equal to half of the vacuum wavelength (λ) plus 0.25 mm. In an embodiment, the second waveguide width (a) of the second SIW (420) may be within any other range of the above-described ranges.

[0116] In an embodiment, each of the vias (422) includes a via diameter (d). In an embodiment, the via diameter (d) may be substantially constant for each of the vias (422). In an embodiment, the via diameter (d) may differ between any one, some, or all of the vias (422). In an embodiment, the via diameter (d) may be substantially the same for the vias of distinct rows of vias. However, in another embodiment, the via diameter (d) may not be substantially the same for the vias of distinct rows of vias. Also, in an embodiment, the via diameter (d) of the vias of other SIWs of the second SIW (420) may differ between these SIWs of the second SIW (420) (e.g., as depicted in FIG. 4a). In an embodiment, the via diameter (d) of the via (422) may be within the same range as described above with respect to the via diameter (d) of the via (262).

[0117] Referring further to FIG. 4b, each waveguide channel (310) of the second SIWs (420) depicted in FIG. 4b is depicted as an overlay. Therefore, since the waveguide channel (310) may not be formed from the second base substrate (410) in the embodiment of FIG. 4b, the waveguide channel (310) is depicted as a dashed line. The waveguide channel (310) may be located around the first package electromagnetic wave transmission element (421A), and accordingly, in the embodiment, the waveguide channel (310) may guide electromagnetic waves to and / or from the second SIW (420) by extending from the source circuit board (110) to the second base substrate (410) (e.g., in the embodiment, through the circuit board upper layer (300) or through another layer or substrate of the waveguide layer (400).

[0118] Accordingly, in an embodiment, the waveguide channel (310) may allow the second SIW (420) to have a second waveguide width (a) that is smaller than the alternative potential waveguide width of the alternative potential SIW, which can be coupled to a waveguide channel having a channel length that is substantially perpendicular to the waveguide length (l) of the alternative potential SIW. Accordingly, the size of the second SIW (420) may be reduced (e.g., by reducing the second waveguide width (a) of the second SIW (420) to a size within a range such as, for example, one, part, or all of the ranges described above). In an embodiment, by reducing the size of the second SIW (420), the size of the second base substrate (410) may also be reduced. In the embodiment, by reducing the size of the second base substrate (410), the cost of manufacturing the second base substrate (410) (and, accordingly, the cost of manufacturing, for example, the waveguide layer (400)) can be similarly reduced. Additionally, in the embodiment, the waveguide channel (310) functions as a waveguide that guides electromagnetic waves to and / or from the second SIW (420), thereby reducing the electrical loss of electromagnetic waves propagated and / or received by the second SIW (420) and / or the first package electromagnetic wave transmission element (421A).

[0119] In an embodiment, the waveguide channel (310) may be located at least partially between the third plurality of vias (422A) and the fourth plurality of vias (422B). In the embodiment of FIG. 4b, the waveguide channel (310) is depicted as being located entirely between the plurality of vias (422A, 422B) (i.e., located within the internal spacing (w)). However, in other embodiments, the waveguide channel (310) may have an alternative size, location, or orientation such that the waveguide channel (310) overlaps with any one, part, or all of the vias (422). In an embodiment, the waveguide channel (310) may be located around the first package electromagnetic wave transmission element (421A), and the channel length (l) c ) is the channel width (w c It may have any size, position, or orientation to have a size that is greater than ). In the embodiment, the channel width (w c Since the second waveguide length (l) of the second SIW (420) is parallel or substantially parallel, this orientation of the waveguide channel (310) can, in the embodiment, allow the first package electromagnetic wave transmission element (421A) to also be parallel or substantially parallel to the second waveguide length (l) of the second SIW (420).

[0120] In an embodiment, for propagating electromagnetic waves to and / or from the first SIW (260) and / or source electromagnetic wave transmission element (261) (for example, compared to an alternative SIW and / or electromagnetic wave transmission element in which the electromagnetic wave transmission element and / or waveguide channel may not be oriented substantially parallel to the second waveguide length (l) of the second SIW (420)), the polarization of the electromagnetic waves propagated or received by the first SIW (260) and / or source electromagnetic wave transmission element (261) may be rotated to take into account the orientation of the source electromagnetic wave transmission element (261) and / or waveguide channel (310). Additionally, in the embodiment, the electromagnetic waves propagated by other SIWs and / or other electromagnetic wave transmission elements and received by the first SIW (260) and / or source electromagnetic wave transmission element (261) may also have their polarization rotated to take into account the orientation of the source electromagnetic wave transmission element (261) and / or waveguide channel (310).

[0121] Referring to FIG. 3c and FIG. 4b, in an embodiment, the waveguide channel (310) may be sized, oriented, and / or positioned such that the waveguide channel (310) is positioned around both the source electromagnetic wave transmission element (261) and the first package electromagnetic wave transmission element (421A). Thus, in an embodiment, the waveguide channel (310) may form a waveguide between the electromagnetic wave transmission elements (261, 421A) and / or SIW (260, 420), thereby enabling either or both of the electromagnetic wave transmission elements (261, 421A) to propagate and / or receive electromagnetic waves to and / or from the other of the electromagnetic wave transmission elements (261, 421A). Accordingly, the waveguide channel (310) provides a coupler between the electromagnetic wave transmission elements (261, 421A) and can reduce the electrical loss of the electromagnetic waves propagating between them. Therefore, in the embodiment, the channel length (l c) may be larger than both the first waveguide width (a) of the first SIW (260) and the second waveguide width (a) of the second SIW (420), and accordingly, in the embodiment, the channel length (l c ) is connected parallel or substantially parallel to both the first waveguide length (l) of the first SIW (260) and the second waveguide length (l) of the second SIW (420). Additionally, in an embodiment, the waveguide channel (310) may be located at least partially between the first plurality of vias (262A) and the second plurality of vias (262B), and at the same time at least partially between the third plurality of vias (422A) and the fourth plurality of vias (422B). In an embodiment, the waveguide channel (310) may be located entirely between the first plurality of vias (262A) and the second plurality of vias (262B), and at the same time at the same time at the same time at the same time between the third plurality of vias (422A) and the fourth plurality of vias (422B). In an embodiment, the waveguide channel (310) may be located at least partially between the first plurality of vias (262A) and the second plurality of vias (262B), while simultaneously being located entirely between the third plurality of vias (422A) and the fourth plurality of vias (422B). In an embodiment, the waveguide channel (310) may be located entirely between the first plurality of vias (262A) and the second plurality of vias (262B), while simultaneously being located at least partially between the third plurality of vias (422A) and the fourth plurality of vias (422B).

[0122] However, in other embodiments, any one, part or all of the source circuit board (110), antenna package (120), circuit board lower layer (200), circuit board upper layer (300), and / or waveguide layer (400) may be manufactured separately from any one, part or all of these other components of the integrated digital RF circuit system (100). Accordingly, in an embodiment, the waveguide channel (310) may be parallel or substantially parallel to only one of the first waveguide length (l) of the first SIW (260) and the second waveguide length (l) of the second SIW (420), rather than both. Accordingly, in an embodiment, the waveguide channel (310) may be located only around the source electromagnetic wave transmission element (261) and / or the first SIW (260), and accordingly, for example, the channel length (l c ) is larger than the first waveguide width (a) of the first SIW (260). In an embodiment, the waveguide channel (310) may be located only around the first package electromagnetic wave transmission element (421a) and / or the second SIW (420), and accordingly, for example, the channel length (l c ) is larger than the second waveguide width (a) of the second SIW (420).

[0123] Now, referring to FIGS. 2a through 3b and FIG. 4a, in an embodiment, each of the first SIW (260) and each of the source electromagnetic wave transmission elements (261) may correspond to each of the waveguide channels (310), thereby allowing electromagnetic waves to be propagated and / or received therefrom. Accordingly, in this embodiment, each of the waveguide channels (310) may be sized, oriented, and / or positioned around each of the source electromagnetic wave transmission elements (261), and / or may be parallel or substantially parallel to the first waveguide length (l) of each of the first SIWs (260), and accordingly, in the embodiment, the channel length (l) of each waveguide channel (310) c) is larger than the first waveguide width (a) of each of the first SIWs (260). Similarly, in the embodiment, each of the waveguide channels (310) may be at least partially located between the first plurality of vias (262A) and the second plurality of vias (262B) of each of the first SIWs (260), and at least partially located between the third plurality of vias (422A) and the fourth plurality of vias (422B) of each of the second SIWs (420). However, in the embodiment, some of the first SIWs (260) and only one of each of the source electromagnetic wave transmission elements (261) may correspond to each of the waveguide channels (310), thereby allowing electromagnetic waves to be propagated and / or received therefrom. Accordingly, in the embodiment, each or some of the waveguide channels (310) may be sized, oriented, and / or positioned around each of the source electromagnetic wave transmission elements (261), and / or may be parallel or substantially parallel to the first waveguide length (l) of each of the first SIWs (260), and accordingly, in the embodiment, the channel length (l) of each waveguide channel (310) c) is larger than the first waveguide width (a) of each of the first SIWs (260). Similarly, in an embodiment, some of the waveguide channels (310) may be located at least partially between the first plurality of vias (262A) and the second plurality of vias (262B) of only some of the first SIWs (260), and at least partially between the third plurality of vias (422A) and the fourth plurality of vias (422B) of only some of the second SIWs (420). In this particular embodiment, some of the first SIWs (260) and the source electromagnetic wave transmission elements (261) may not propagate or receive electromagnetic waves through each of the waveguide channels (310). Additionally, in the embodiment, each of the first SIWs (260) and each of the source electromagnetic wave transmission elements (261) may correspond to each of the waveguide channels (310), thereby allowing electromagnetic waves to be propagated and / or received therefrom. Accordingly, in the embodiment, only one of the waveguide channels (310) may be sized, oriented, and / or positioned around each of the source electromagnetic wave transmission elements (261), and / or may be parallel or substantially parallel to the first waveguide length (l) of each of the first SIWs (260), and accordingly, in the embodiment, the channel length (l) of each waveguide channel (310) c) is larger than the first waveguide width (a) of each of the first SIWs (260). Similarly, in an embodiment, only one of the waveguide channels (310) may be located at least partially between one of the first plurality vias (262A) and the second plurality vias (262B) of the first SIWs (260), and at least partially between one of the third plurality vias (422A) and the fourth plurality vias (422B) of the second SIWs (420). In this particular embodiment, the first SIW (260) and the remainder of the source electromagnetic wave transmission element (261) may not propagate or receive electromagnetic waves through each of the waveguide channels (310).

[0124] Referring further to FIGS. 2a through 3b and FIG. 4a, in an embodiment, each of the second SIWs (420) and each of the first package electromagnetic wave transmission elements (421A) may correspond to each of the waveguide channels (310), thereby enabling the propagation and / or reception of electromagnetic waves. Accordingly, in this embodiment, each of the waveguide channels (310) may be sized, oriented, and / or positioned around each of the first package electromagnetic wave transmission elements (421A), and / or may be parallel or substantially parallel to the second waveguide length (l) of each of the second SIWs (420), and accordingly, in the embodiment, the channel length (l) of each waveguide channel (310) c) is larger than the second waveguide width (a) of each of the second SIWs (420). However, in the embodiment, some of the second SIWs (420) and only one of each of the first package electromagnetic wave transmission elements (421A) may correspond to each of the waveguide channels (310), thereby allowing electromagnetic waves to be propagated and / or received therefrom. Accordingly, in this embodiment, each of the waveguide channels (310) or some of them may be sized, oriented, and / or positioned around each of the first package electromagnetic wave transmission elements (421A), and / or may be parallel or substantially parallel to the second waveguide length (l) of each of the second SIWs (420), and accordingly, in the embodiment, the channel length (l) of each waveguide channel (310) c ) is larger than the second waveguide width (a) of each of the second SIWs (420). In this particular embodiment, some of the second SIWs (420) and the first package electromagnetic wave transmission elements (421A) may not propagate or receive electromagnetic waves through each of the waveguide channels (310). Additionally, in the embodiment, only one of each of the second SIWs (420) and the first package electromagnetic wave transmission elements (421A) may correspond to each of the waveguide channels (310), thereby propagating and / or receiving electromagnetic waves through it. Accordingly, in this embodiment, only one of the waveguide channels (310) may be sized, oriented, and / or positioned around each of the first package electromagnetic wave transmission elements (421A), and / or may be parallel or substantially parallel to the second waveguide length (l) of each of the second SIWs (420), and accordingly, in the embodiment, the channel length (l) of each waveguide channel (310) c) is larger than the second waveguide width (a) of each of the second SIWs (420). In this particular embodiment, the second SIW (420) and the remainder of the first package electromagnetic wave transmission element (421A) may not propagate or receive electromagnetic waves through each of the waveguide channels (310).

[0125] Referring to FIG. 5, the antenna layer (500) includes an antenna element (510). In an embodiment, the antenna element (510) may be located on one side of the antenna layer (500) opposite to the side attached to the spacer layer (450). In an embodiment, the antenna element (510) may include, for example, a grounded coplanar waveguide, a microstrip transmission line, a patch element (e.g., a patch antenna), a slot antenna, an RF chip, or any combination thereof. In an embodiment, the antenna element (510) may receive and / or transmit electromagnetic waves into and / or from the environment. Thus, in an embodiment, the antenna element (510) may function as a radar device, an electromagnetic communication device (e.g., a device for communicating with an external transceiver or receiver), or other such device that communicates or otherwise collects information by transmitting and / or receiving electromagnetic waves to and / or from the environment or other devices.

[0126] In an embodiment, the antenna element (510) can transmit and / or receive electromagnetic waves from one or more of the second package electromagnetic wave transmission elements (421B). Thus, in an embodiment, the antenna element (510) can receive one or more electromagnetic waves from the second package electromagnetic wave transmission elements (421B) and transmit the electromagnetic waves into the environment and / or to an external device. Similarly, in an embodiment, the antenna element (510) can receive electromagnetic waves from the environment and / or an external device and transmit the electromagnetic waves to the second package electromagnetic wave transmission elements (421B). In an embodiment, the antenna layer (500) may be formed of glass or other optically transparent or substantially optically transparent material. Accordingly, in an embodiment, one or more electromagnetic waves transmitted between the antenna element (510) and the second package electromagnetic wave transmission element (421B) can be propagated through both the spacer layer (450) and the antenna layer (500), because in this particular embodiment, the antenna element (510) can be located on one side of the antenna layer (500) opposite to one side of the antenna layer (500) attached to the spacer layer (450).

[0127] In the embodiment of FIG. 5, the antenna layer (500) includes 48 antenna elements (510). However, in other embodiments, the antenna layer (500) may include any number of antenna elements (510). In an embodiment, the antenna layer (500) may include only one antenna element (510). In an embodiment, the antenna layer (500) may include the same number of antenna elements (510) as the number of second package electromagnetic wave transmission elements (421B) of the waveguide layer (400).

[0128] Referring to FIGS. 4a and FIGS. 5, each antenna element (510) may correspond to each of the second package electromagnetic wave transmission elements (421B). In an embodiment, any one, part or all of the antenna elements (510) may correspond to a plurality of second package electromagnetic wave transmission elements (421B). In an embodiment, any one, part or all of the second package electromagnetic wave transmission elements (421B) may correspond to a plurality of antenna elements (510). Accordingly, in an embodiment, each of the second package electromagnetic wave transmission elements (421B) may propagate and / or receive electromagnetic waves from one or more of the antenna elements (510) and / or therefrom (e.g., through the spacer layer (450)). Similarly, in the embodiment, each antenna element (510) can propagate and / or receive electromagnetic waves from and / or from one or more of the second package electromagnetic wave transmission elements (421B) (e.g., through the spacer layer (450)). To this end, in the embodiment, when the antenna layer (500), the spacer layer (450), and the waveguide layer (400) are attached, each antenna element (510) can be positioned on one of the second package electromagnetic wave transmission elements (421B) (e.g., in the +z direction of the axis of FIG. 1 and / or FIG. 4).

[0129] Accordingly, with reference to FIGS. 1, FIGS. 2a, FIGS. 2c, FIGS. 3a, FIGS. 4a, and FIGS. 5, the integrated digital RF circuit system (100) can operate by propagating and / or receiving one or more electromagnetic wave signals, for example, through various components located between the integrated circuit (270) and the antenna element (510) in the embodiment. For example, electromagnetic waves can be transmitted by an integrated circuit (270) via a microstrip transmission line (271), and then the electromagnetic wave signal can be propagated to a source electromagnetic wave transmission element (261) through a first SIW (260), and then the source electromagnetic wave transmission element (261) can transmit the electromagnetic wave signal to a first package electromagnetic wave transmission element (421A) through a waveguide channel (310), and then the electromagnetic wave signal can be propagated to a second package electromagnetic wave transmission element (421B) through a second SIW (420), and the second package electromagnetic wave transmission element (421B) can transmit the electromagnetic wave signal to an antenna element (510), and accordingly, the antenna element (510) can transmit the electromagnetic wave signal to an environment and / or an external device. Similarly, in an embodiment, the antenna element (510) can receive an electromagnetic wave signal, and the antenna element (510) can transmit the electromagnetic wave signal to a second package electromagnetic wave transmission element (421B), and then the electromagnetic wave signal can be propagated to a first package electromagnetic wave transmission element (421A) through a second SIW (420), and the first package electromagnetic wave transmission element (421A) can transmit the electromagnetic wave signal to a source electromagnetic wave transmission element (261) through a waveguide channel (310), and then the electromagnetic wave signal can be propagated to a microstrip transmission line (271) through a first SIW (260), and accordingly, the microstrip transmission line (271) can transmit the electromagnetic wave signal to an integrated circuit (270).

[0130] In an embodiment, the source circuit board (110) may operate by propagating and / or receiving an electromagnetic wave signal through the waveguide channel (310), for example, through various components located between the waveguide channel (310) and the integrated circuit (270). For example, the electromagnetic wave may be transmitted to the integrated circuit (270) by a microstrip transmission line (271), and then the electromagnetic wave signal may be propagated to the source electromagnetic wave transmission element (261) through the first SIW (260), and then the source electromagnetic wave transmission element (261) may transmit the electromagnetic wave signal through the waveguide channel (310). Similarly, in an embodiment, a source electromagnetic wave transmission element (261) can receive an electromagnetic wave signal through a waveguide channel (310), and then the electromagnetic wave signal can be propagated to a microstrip transmission line (271) through a first SIW (260), and accordingly, the microstrip transmission line (271) can transmit the electromagnetic wave signal to an integrated circuit (270).

[0131] In an embodiment, the antenna package (120) may operate by propagating and / or receiving one or more electromagnetic wave signals through the waveguide channel (310) through various components located between the waveguide channel (310) and the antenna element (510), for example. For example, a first package electromagnetic wave transmission element (421A) may receive electromagnetic waves through the waveguide channel (310), and then the electromagnetic wave signal may be propagated to a second package electromagnetic wave transmission element (421B) through a second SIW (420), and the second package electromagnetic wave transmission element (421B) may transmit the electromagnetic wave signal to the antenna element (510), and accordingly, the antenna element (510) may transmit the electromagnetic wave signal to the environment and / or an external device. Similarly, in an embodiment, the antenna element (510) can receive an electromagnetic wave signal, and accordingly, the antenna element (510) can transmit the electromagnetic wave signal to a second package electromagnetic wave transmission element (421B), and then the electromagnetic wave signal can be propagated to a first package electromagnetic wave transmission element (421A) through a second SIW (420), and the first package electromagnetic wave transmission element (421A) can transmit the electromagnetic wave signal through a waveguide channel (310).

[0132] FIG. 6 illustrates a flowchart of a first exemplary method (600) for manufacturing an integrated digital RF circuit system, such as the integrated digital RF circuit system (100) of FIG. 1 through 5 as described herein. Although the first method (600) generally relates to the manufacturing of an integrated digital RF circuit system as described herein, a similar process may be used for other integrated digital RF circuit systems, and only a part of the first method (600) may be used for other integrated digital RF circuit systems, source circuit boards, antenna packages, and waveguide channels (e.g., source circuit boards (110), antenna packages (120), and / or waveguide channels (310)) described herein in relation to FIG. 1 through 5), it should be understood that steps relating to the components of such integrated digital RF circuit systems may be excluded.

[0133] Referring to FIG. 6 and FIGS. 2a through 3c, the first method (600) comprises forming a source circuit board (110) comprising a first base board (250) comprising a waveguide channel (310) defined by the source circuit board (110) and a first SIW (260), as depicted in block (610). In an embodiment, the first SIW (260) may include a first waveguide length (l) and a first waveguide width (a). In an embodiment, the first SIW (260) may include a first plurality of vias (262A) arranged along the first waveguide length (l) of the first SIW (260). In an embodiment, each of the vias (262) of the first plurality of vias (262A) may extend through at least partially the first base board (250). In an embodiment, the first SIW (260) may include a second plurality of vias (262B) arranged along the first waveguide length (l) of the first SIW (260). In an embodiment, each of the vias (262) of the second plurality of vias (262B) may extend through at least partially the first base substrate (250). In an embodiment, the first plurality of vias (262A) and the second plurality of vias (262B) may be spaced apart by the first waveguide width (a) of the first SIW (260). In an embodiment, the source circuit board (110) may include a front side (112). In an embodiment, the source circuit board (110) may include a rear side (114) opposite to the front side (112). In an embodiment, the waveguide channel (310) may guide electromagnetic waves to and / or from the first SIW (260). In an embodiment, the waveguide channel (310) may extend from the rear side (114) toward the front side (112). In an embodiment, the waveguide channel (310) has a channel length (l c ) and channel width (w c ) can be specified. In the embodiment, the channel length (l c ) is the channel width (w c It can be larger than ). In the example, the channel length (l c) may be larger than the first waveguide width (a) of the first SIW (260). In an embodiment, the waveguide channel (310) may be located at least partially between the first plurality of vias (262A) and the second plurality of vias (262B). In an embodiment, the first base substrate (250) may include a source electromagnetic wave transmission element (261). In an embodiment, the waveguide channel (310) may be located around the source electromagnetic wave transmission element (261). In an embodiment, the waveguide channel (310) may be located parallel or substantially parallel to the first waveguide length (l) of the first SIW (260).

[0134] Referring again to FIG. 6 and FIG. 1 and FIG. 5, the first method (600) includes attaching an antenna layer (500) to a spacer layer (450) as depicted in block (620).

[0135] Referring again to FIG. 6 and FIG. 1 and FIG. 5, the first method (600) includes attaching a spacer layer (450) to a waveguide layer (400) as depicted in block (630). In an embodiment, the spacer layer (450) may be located between the waveguide layer (400) and the antenna layer (500). In an embodiment, the waveguide layer (400) may be located between the spacer layer (450) and the source circuit board (110).

[0136] Referring again to FIG. 6 and FIG. 1 and FIG. 4a, the first method (600) includes attaching a waveguide layer (400) to the rear side (114) of a source circuit board (110) as depicted in block (640).

[0137] In an embodiment, the waveguide layer (400) may include a second base substrate (410). In an embodiment, the second base substrate (410) may include a second SIW (420). In an embodiment, the second SIW (420) may include a second waveguide length (l) and a second waveguide width (a). In an embodiment, the second SIW (420) may include a third plurality of vias (422A) arranged along the second waveguide length (l) of the second SIW (420). In an embodiment, each of the vias (422) of the third plurality of vias (422A) may extend by penetrating at least partially through the second base substrate (410). In an embodiment, the second SIW (420) may include a fourth plurality of vias (422B) arranged along the second waveguide length (l) of the second SIW (420). In an embodiment, each of the vias (422) of the fourth plurality of vias (422B) may extend through at least partially the second base substrate (410). In an embodiment, the third plurality of vias (422A) and the fourth plurality of vias (422B) may be spaced apart by the second waveguide width (a) of the second SIW (420). In an embodiment, the second base substrate (410) may be a component of the waveguide layer (400). In an embodiment, the waveguide layer (400) may comprise only a single layer, and in an embodiment, the single layer may be the second base substrate (410).

[0138] In an embodiment, the waveguide channel (310) may be located at least partially between the third plurality of vias (422A) and the fourth plurality of vias (422B). In an embodiment, the channel length (l c) may be larger than the second waveguide width (a) of the second SIW (420). In an embodiment, the second base substrate (410) may include a first package electromagnetic wave transmission element (421A). In an embodiment, the waveguide channel (310) may be located around the first package electromagnetic wave transmission element (421A). In an embodiment, the waveguide channel (310) may be located parallel or substantially parallel to the second waveguide length (l) of the second SIW (420).

[0139] In an embodiment, the waveguide channel (310) can guide electromagnetic waves between the first SIW (260) and the second SIW (420). In an embodiment, the channel length (l c ) may be larger than the first waveguide width (a) of the first SIW (260) and the second waveguide width (a) of the second SIW (420). In an embodiment, the waveguide channel (310) may be located at least partially between the first plurality of vias (262A) and the second plurality of vias (262B), and at least partially between the third plurality of vias (422A) and the fourth plurality of vias (422B). In an embodiment, the waveguide channel (310) may be located around both the source electromagnetic wave transmission element (261) and the first package electromagnetic wave transmission element (421A). In an embodiment, the waveguide channel (310) may be located parallel or substantially parallel to both the first waveguide length (l) of the first SIW (260) and the second waveguide length (l) of the second SIW (420).

[0140] FIG. 7 illustrates a flowchart of a second exemplary method (700) for manufacturing an integrated digital RF circuit system, such as the integrated digital RF circuit system (100) of FIG. 1 through 5 as described herein. Although the second method (700) generally relates to the manufacturing of the integrated digital RF circuit system described herein, a similar process may be used for other integrated digital RF circuit systems, and only a portion of the second method (700) may be used for other integrated digital RF circuit systems, source circuit boards, antenna packages, and waveguide channels (e.g., source circuit boards (110), antenna packages (120), and / or waveguide channels (310)) described herein in relation to FIG. 1 through 5), it should be understood that steps relating to the components of such integrated digital RF circuit systems may be excluded.

[0141] Referring to FIG. 7 and FIG. 4a and 4b, the second method (700) comprises forming a second base substrate (410) including a second SIW (420) as depicted in block (710). In an embodiment, the second SIW (420) may include a second waveguide length (l) and a second waveguide width (a). In an embodiment, the second SIW (420) may include a third plurality of vias (422A) arranged along the second waveguide length (l) of the second SIW (420). In an embodiment, each of the vias (422) of the third plurality of vias (422A) may extend through at least partially the second base substrate (410). In an embodiment, the second SIW (420) may include a fourth plurality of vias (422B) arranged along the second waveguide length (l) of the second SIW (420). In an embodiment, each of the vias (422) of the fourth plurality of vias (422B) may extend through at least partially the second base substrate (410). In an embodiment, the third plurality of vias (422A) and the fourth plurality of vias (422B) may be spaced apart by the second waveguide width (a) of the second SIW (420). In an embodiment, the second base substrate (410) may be a component of the waveguide layer (400). In an embodiment, the waveguide layer (400) may comprise only a single layer, and in an embodiment, the single layer may be the second base substrate (410).

[0142] Referring again to FIG. 7 and FIG. 1 and FIG. 5, the second method (700) includes attaching an antenna layer (500) to a spacer layer (450) as depicted in block (720).

[0143] Referring again to FIG. 7 and FIG. 1, the second method (700) includes attaching a spacer layer (450) to a second base substrate (410) as depicted in block (730). In an embodiment where the second base substrate (410) is a component of the waveguide layer (400), the second method (700) may additionally or alternatively include attaching the spacer layer (450) to the waveguide layer (400) instead of, for example, directly attaching the spacer layer (450) to the second base substrate (410).

[0144] Referring again to FIG. 7 and FIGS. 1 through 4b, the second method (700) comprises attaching a second base substrate (410) to the rear side (114) of the source circuit board (110), as depicted in block (740). In an embodiment, the source circuit board (110) may include a front side (112) opposite to the rear side (114). In an embodiment, the source circuit board (110) may define a waveguide channel (310). In an embodiment, the waveguide channel (310) may guide electromagnetic waves to and / or from the second SIW (420). In an embodiment, the waveguide channel (310) may extend from the rear side (114) toward the front side (112). In an embodiment, the waveguide channel (310) has a channel length (l c ) and channel width (w c ) can be specified. In the embodiment, the channel length (l c ) is the channel width (w c It can be larger than )

[0145] In an embodiment where the second base substrate (410) is a component of the waveguide layer (400), the second method (700) may additionally or alternatively include attaching the waveguide layer (400) to the source circuit board (110), for example, instead of directly attaching the second base substrate (410) to the source circuit board (110). In an embodiment, the waveguide layer (400), rather than the source circuit board (110), may define the waveguide channel (310). In this particular embodiment, the waveguide channel (310) may extend from the source circuit board (110) to the second base substrate (410).

[0146] In an embodiment, the waveguide channel (310) may be located at least partially between the third plurality of vias (422A) and the fourth plurality of vias (422B). In an embodiment, the channel length (l c ) may be larger than the second waveguide width (a) of the second SIW (420). In an embodiment, the second base substrate (410) may include a first package electromagnetic wave transmission element (421A). In an embodiment, the waveguide channel (310) may be located around the first package electromagnetic wave transmission element (421A). In an embodiment, the waveguide channel (310) may be located parallel or substantially parallel to the second waveguide length (l) of the second SIW (420).

[0147] In an embodiment, the source circuit board (110) may include a first base board (250). In an embodiment, the first base board (250) may include a first SIW (260). In an embodiment, the first SIW (260) may include a first waveguide length (l) and a first waveguide width (a). In an embodiment, the first SIW (260) may include a first plurality of vias (262a) arranged along the first waveguide length (l) of the first SIW (260). In an embodiment, each of the vias (262) of the first plurality of vias (262A) may extend through at least partially the first base board (250). In an embodiment, the first SIW (260) may include a second plurality of vias (262B) arranged along the first waveguide length (l) of the first SIW (260). In an embodiment, each of the vias (262) of the second plurality of vias (262B) may extend through at least partially the first base substrate (250). In an embodiment, the first plurality of vias (262A) and the second plurality of vias (262B) may be spaced apart by the first waveguide width (a) of the first SIW (260). In an embodiment, the waveguide channel (310) may guide electromagnetic waves to and / or from the first SIW (260). In an embodiment, the waveguide channel (310) may extend from the rear side (114) toward the front side (112). In an embodiment, the channel length (l) of the waveguide channel (310) c) may be larger than the first waveguide width (a) of the first SIW (260). In an embodiment, the waveguide channel (310) may be located at least partially between the first plurality of vias (262A) and the second plurality of vias (262B). In an embodiment, the first base substrate (250) may include a source electromagnetic wave transmission element (261). In an embodiment, the waveguide channel (310) may be located around the source electromagnetic wave transmission element (261). In an embodiment, the waveguide channel (310) may be located parallel or substantially parallel to the first waveguide length (l) of the first SIW (260).

[0148] In an embodiment, the waveguide channel (310) can guide electromagnetic waves between the first SIW (260) and the second SIW (420). In an embodiment, the channel length (l c ) may be larger than the first waveguide width (a) of the first SIW (260) and the second waveguide width (a) of the second SIW (420). In an embodiment, the waveguide channel (310) may be located at least partially between the first plurality of vias (262A) and the second plurality of vias (262B), and at least partially between the third plurality of vias (422A) and the fourth plurality of vias (422B). In an embodiment, the waveguide channel (310) may be located around both the source electromagnetic wave transmission element (261) and the first package electromagnetic wave transmission element (421A). In an embodiment, the waveguide channel (310) may be located parallel or substantially parallel to both the first waveguide length (l) of the first SIW (260) and the second waveguide length (l) of the second SIW (420).

[0149] In an embodiment, the second base substrate (410) may be positioned between the spacer layer (450) and the source circuit board (110). In an embodiment, the spacer layer (450) may be positioned between the antenna layer (500) and the second base substrate (410).

[0150] Now, the present disclosure relates to various integrated digital RF circuit systems, source circuit boards, and antenna packages, as well as methods for manufacturing the same, comprising an SIW having a waveguide length, a first plurality of vias, and a second plurality of vias, and a waveguide channel having a channel length and a channel width, wherein it should be understood that the waveguide channel is at least partially located between the first plurality of vias and the second plurality of vias, the channel length is greater than the channel width, and the channel length is greater than the waveguide width. Accordingly, the present invention describes an integrated digital RF circuit system, a source circuit board, and an antenna package having a waveguide channel that may be parallel or substantially parallel to the waveguide length of a waveguide of a source circuit board (e.g., a waveguide of an integrated digital RF circuit system), a waveguide of an antenna package (e.g., a waveguide of an integrated digital RF circuit system), and / or a waveguide channel that may be parallel or substantially parallel to the waveguide length of both the source circuit board and the antenna package of the integrated digital RF circuit system. These waveguide channels of the source circuit board, the antenna package, or both can advantageously reduce the size of the waveguide and / or the substrate on which the waveguide is located, for example, by orienting the waveguide channels parallel or substantially parallel to the length of the waveguide. Additionally, these waveguide channels of the source circuit board, the antenna package, or both can advantageously reduce electrical losses of electromagnetic waves propagated and / or received by the waveguide of the source circuit board or the antenna package by providing a waveguide between the source circuit board and the antenna package.

[0151] yes

[0152] To make various embodiments easier to understand, refer to the following examples intended to illustrate various embodiments of the laser bonding method described herein.

[0153] Now, referring to FIG. 8, plot (800) shows the electrical loss (measured in decibels ("dB") of an electromagnetic wave propagating through a waveguide channel (e.g., waveguide channel (310)) for the frequency (in GHz) of this electromagnetic wave. As illustrated, for example at 77 GHz, the electromagnetic wave exhibits a loss of about 1 dB, including a propagation loss of about 0.5 dB (e.g., not insertion loss).

[0154] While specific embodiments have been illustrated and described herein, it should be understood that various other changes and modifications may be made without departing from the spirit and scope of the claimed subject matter. Furthermore, while various aspects of the claimed subject matter have been described herein, these aspects are not necessarily required to be used in combination. Accordingly, the appended claims are intended to encompass all such changes and modifications that fall within the scope of the claimed subject matter.

Claims

Claim 1 As an integrated digital RF circuit system, the integrated digital RF circuit system comprises a first base substrate including a first substrate integrated waveguide, wherein the first substrate integrated waveguide comprises a first waveguide length and a first waveguide width, a first plurality of vias arranged along the first waveguide length, wherein each of the first plurality of vias extends by penetrating at least partially through the first base substrate, and a second plurality of vias arranged along the first waveguide length, wherein each of the second plurality of vias extends by penetrating at least partially through the first base substrate, and the first plurality of vias and the second plurality of vias are spaced apart by the first waveguide width; An integrated digital RF circuit system comprising: a source circuit board comprising a front side, a rear side opposite to the front side, and a waveguide channel defined by the source circuit board for guiding electromagnetic waves to or from the first substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side; wherein the waveguide channel is at least partially located between the first plurality of vias and the second plurality of vias; wherein the waveguide channel defines a channel length and a channel width; wherein the channel length is greater than the channel width; and wherein the channel length is greater than the first waveguide width. Claim 2 An integrated digital RF circuit system according to claim 1, wherein the source circuit board comprises the first base board, the first base board comprises a source electromagnetic wave transmission element, and the source electromagnetic wave transmission element propagates or receives the electromagnetic wave through the waveguide channel. Claim 3 In paragraph 2, the source electromagnetic wave transmission element comprises at least one of a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof, in an integrated digital RF circuit system. Claim 4 In paragraph 3, the first base substrate is attached to the source circuit board by at least one of an adhesive; soldering; room temperature laser welding; laser sintering; optical contact; thermal diffusion bonding; or any combination thereof, in an integrated digital RF circuit system. Claim 5 An integrated digital RF circuit system according to claim 1, further comprising an antenna package, wherein the antenna package is attached to the rear side of the source circuit board, and the antenna package comprises the first base board. Claim 6 An integrated digital RF circuit system according to claim 5, wherein the antenna package further comprises a spacer layer and an antenna layer; the antenna layer comprises an antenna element; the spacer layer is positioned between the antenna layer and the first base substrate; and the first base substrate is positioned between the spacer layer and the rear side of the source circuit board. Claim 7 In claim 6, the antenna element receives the first electromagnetic wave from the first substrate integrated waveguide and transmits the first electromagnetic wave into the environment; receives the first electromagnetic wave from the environment and transmits the first electromagnetic wave to the first substrate integrated waveguide; or performs any combination thereof, an integrated digital RF circuit system. Claim 8 In claim 5, the source circuit board further comprises a second base board; the second base board comprises a second board integrated waveguide; the antenna package comprises a package electromagnetic wave transmission element; the second board integrated waveguide comprises a source electromagnetic wave transmission element; and the waveguide channel guides the electromagnetic wave between the source electromagnetic wave transmission element and the package electromagnetic wave transmission element, an integrated digital RF circuit system. Claim 9 In claim 8, the integrated digital RF circuit system wherein either or both of the package electromagnetic wave transmission element and the source electromagnetic wave transmission element comprises at least one of a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof. Claim 10 In claim 8, the second substrate integrated waveguide comprises: a second waveguide length and a second waveguide width; a third plurality of vias arranged along the second waveguide length, wherein each of the third plurality of vias extends by at least partially penetrating the second base substrate; and a fourth plurality of vias arranged along the second waveguide length, wherein each of the fourth plurality of vias extends by at least partially penetrating the second base substrate, and the third plurality of vias and the fourth plurality of vias are spaced apart by the second waveguide width; the waveguide channel is located at least partially between the third plurality of vias and the fourth plurality of vias; and the channel length is greater than the second waveguide width, an integrated digital RF circuit system. Claim 11 In claim 5, the antenna package is attached to the source circuit board by at least one of adhesive; soldering; room temperature laser welding; laser sintering; optical contact; thermal diffusion bonding; or any combination thereof, in an integrated digital RF circuit system. Claim 12 An integrated digital RF circuit system according to claim 1, wherein the electromagnetic wave includes a frequency of 300 MHz or more and 300 GHz or less. Claim 13 In claim 12, the said electromagnetic wave is an integrated digital RF circuit system including a frequency of 75 GHz or higher and 84 GHz or lower. Claim 14 An integrated digital RF circuit system according to claim 1, wherein the electromagnetic wave includes a wavelength (λ); the first waveguide width is (0.5 * λ) - 0.05 mm or greater; and the first waveguide width is (0.5 * λ) + 0.05 mm or less. Claim 15 An integrated digital RF circuit system according to claim 1, wherein the channel length is 2.9 mm or more and 3.1 mm or less; and the channel width is 1.4 mm or more and 1.6 mm or less. Claim 16 An integrated digital RF circuit system according to claim 1, wherein the channel length is parallel to the first waveguide length. Claim 17 An integrated digital RF circuit system according to claim 1, wherein the source circuit board includes a printed circuit board. Claim 18 An integrated digital RF circuit system according to claim 1, wherein the first base substrate comprises at least one of glass; ceramic; glass-ceramic; polymer; polycrystalline ceramic; single-crystal ceramic; or any combination thereof. Claim 19 A method for manufacturing an integrated digital RF circuit system, the method comprising the step of forming a source circuit board, wherein the source circuit board is a base board including a substrate integrated waveguide, the substrate integrated waveguide comprising a waveguide length and a waveguide width, a first plurality of vias arranged along the waveguide length, wherein each of the first plurality of vias extends by at least partially penetrating the base board, and a second plurality of vias arranged along the waveguide length, wherein each of the second plurality of vias extends by at least partially penetrating the base board, and the first plurality of vias and the second plurality of vias are spaced apart by the first waveguide width, the base board comprising a front side, a rear side opposite to the front side, and a waveguide channel defined by the source circuit board for guiding electromagnetic waves to or from the first substrate integrated waveguide, wherein the waveguide channel extends from the rear side to the front side A method comprising: forming a source circuit board including a waveguide channel extending toward, wherein the waveguide channel defines a channel length and a channel width, wherein the channel length is greater than the channel width and the channel length is greater than the waveguide width, and wherein the waveguide channel is at least partially located between the first plurality of vias and the second plurality of vias; attaching an antenna layer to a spacer layer; attaching the spacer layer to a waveguide layer; and attaching the waveguide layer to the rear side of the source circuit board, wherein the spacer layer is located between the waveguide layer and the antenna layer, and the waveguide layer is located between the spacer layer and the source circuit board. Claim 20 A method for manufacturing an integrated digital RF circuit system, the method comprises the step of forming a base substrate including a substrate integrated waveguide, wherein the substrate integrated waveguide comprises a waveguide length and a waveguide width, a first plurality of vias arranged along the waveguide length, wherein each of the first plurality of vias extends by penetrating at least partially through the base substrate, and a second plurality of vias arranged along the waveguide length, wherein each of the second plurality of vias extends by penetrating at least partially through the base substrate, and the first plurality of vias and the second plurality of vias are spaced apart by the waveguide width; the step of attaching an antenna layer to a spacer layer; and the step of attaching the spacer layer to the base substrate. A method comprising the step of attaching the base substrate to the rear side of a source circuit board, wherein the source circuit board comprises a front side opposite to the rear side, and a waveguide channel defined by the source circuit board for guiding electromagnetic waves to or from the substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side, and the waveguide channel is at least partially located between the first plurality of vias and the second plurality of vias, and the waveguide channel defines a channel length and a channel width, wherein the channel length is greater than the channel width and the channel length is greater than the waveguide width, and wherein the base substrate is located between the spacer layer and the source circuit board, and the spacer layer is located between the antenna layer and the base substrate.

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