Photoluminescent plasma for activation in processing chambers, and related apparatus and methods

Abstract

The present disclosure relates to a photoemitting plasma for gas activation in processing chambers, and to related apparatus and methods. In one or more embodiments, a processing chamber applicable to semiconductor manufacturing comprises one or more sidewalls, a window defining at least partially an internal volume, and a substrate support disposed within the internal volume. The processing chamber comprises one or more heat sources operable to heat the internal volume, and a plate disposed between the window and the substrate support within the internal volume. The plate at least partially separates the internal volume into a first volume between the plate and the substrate support and a second volume between the plate and the window. The processing chamber comprises an energy source operable to supply plasma between the plate and the window.

Description

Technology Field

[0001] The present disclosure relates to a photoemitting plasma for gas and / or surface activation in processing chambers, and to related apparatus and methods. Background Technology

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. During processing, various parameters can affect the uniformity of the material deposited on the substrate. For example, substrate temperature can affect gas activation, which can impede deposition uniformity and efficiency. Additionally, using relatively low substrate temperatures for processing operations can be challenging.

[0003] Therefore, there is a need for improved chamber components that facilitate temperature uniformity.

[0004] The present disclosure relates to a photoemitting plasma for gas and / or surface activation in processing chambers, and to related apparatus and methods.

[0005] In one or more embodiments, a processing chamber applicable to semiconductor manufacturing comprises one or more sidewalls, a window defining at least partially an internal volume, and a substrate support disposed within the internal volume. The processing chamber comprises one or more heat sources operable to heat the internal volume, and a plate disposed between the window and the substrate support within the internal volume. The plate at least partially separates the internal volume into a first volume between the plate and the substrate support, and a second volume between the plate and the window. The processing chamber comprises an energy source operable to supply plasma between the plate and the window.

[0006] In one or more embodiments, a processing chamber applicable to semiconductor manufacturing comprises one or more sidewalls, a window that at least partially defines an internal volume, and a substrate support disposed within the internal volume. The processing chamber comprises a plate disposed between the window and the substrate support within the internal volume, and an energy source disposed between the plate and the window. The energy source is operable to emit ultraviolet (UV) light having a wavelength in the range of 100 nm to 355 nm.

[0007] In one or more embodiments, the substrate processing method comprises the steps of heating a substrate positioned on a substrate support and supplying plasma within the internal volume of a processing chamber. The supplying step includes applying a voltage across the gas. The method comprises the steps of flowing one or more process gases over the substrate and depositing one or more layers on the substrate. Brief explanation of the drawing

[0008] In a manner that allows the features of the above-mentioned disclosure to be understood in detail, a more specific description of the disclosure briefly summarized above may be made with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that since the disclosure may allow for other equally effective embodiments, the accompanying drawings illustrate only exemplary embodiments and should therefore not be construed as limiting the scope thereof. FIG. 1 is a schematic side cross-sectional view of a processing chamber according to one or more embodiments. FIG. 2 is a schematic partial side cross-sectional view of a processing chamber according to one or more embodiments. FIG. 3 is a schematic partial side cross-sectional view of a processing chamber according to one or more embodiments. FIG. 4 is a schematic enlarged cross-sectional view of one or more plasma lamps shown in FIG. 3 according to one or more embodiments. FIG. 5 is a schematic partial top view of the plasma lamp illustrated in FIG. 4 according to one or more embodiments. FIG. 6 is a schematic partial top view of a plasma lamp according to one or more embodiments. FIG. 7 is a schematic partial top view of a plurality of lamps according to one or more embodiments. FIG. 8 illustrates a flowchart illustrating a method of processing a substrate in a processing chamber according to one or more embodiments. FIG. 9 is a schematic partial side view of a processing chamber according to one or more embodiments. To facilitate understanding and to designate identical elements common to the drawings, the same reference numbers have been used where possible. The elements and features of one embodiment are considered to be beneficially incorporated into other embodiments without further mention. Specific details for implementing the invention

[0009] The present disclosure relates to a photoemitting plasma for gas and / or surface activation in processing chambers, and to related apparatus and methods. In one or more embodiments, the plasma is supplied into a processing chamber, and the plasma emits ultraviolet (UV) light toward a substrate or one or more of a process gas. In one or more embodiments, the plasma is fluidically isolated from one or more process gases flowing over the substrate.

[0010] FIG. 1 is a schematic partial side cross-sectional view of a processing chamber (100) according to one or more embodiments. The processing chamber (100) is a deposition chamber. In one or more embodiments, the processing chamber (100) is an epitaxial deposition chamber. In one or more embodiments, the processing chamber (100) is used to grow an epitaxial film on a substrate (102). The processing chamber (100) generates a cross-flow of precursors across the top surface of the substrate (102). The processing chamber (100) is shown in FIG. 1 as being in a processing state.

[0011] The processing chamber (100) includes an upper body (156), a lower body (148) disposed below the upper body (156), and a flow module (112) disposed between the upper body (156) and the lower body (148). The upper body (156), the flow module (112), and the lower body (148) form a chamber body. Inside the chamber body, a substrate support (106), an upper window (108) (e.g., an upper dome), a lower window (110) (e.g., a lower dome), and one or more heat sources (141, 143) are disposed. In one or more embodiments, the one or more heat sources (141, 143) include a plurality of upper heat sources (141) and a plurality of lower heat sources (143). As illustrated, the controller (120) communicates with the processing chamber (100) and is used to control the operations of the processes and methods described herein, such as methods (e.g., method (800) illustrated in FIG. 8). The present disclosure takes into account that each of the heat sources described herein may include one or more of lamp(s) (e.g., infrared radiation lamps and / or plasma lamps), resistive heater(s), light-emitting diode(s) (LEDs), and / or laser(s). The present disclosure takes into account that other heat sources may be used. In the embodiment illustrated in FIG. 1, the heat sources (141, 143) are illustrated as lamps.

[0012] A substrate support (106) is positioned between an upper window (108) and a lower window (110). The substrate support (106) includes a support surface (123) that supports the substrate (102). A plurality of upper heat sources (141) are positioned between the upper window and a cover (154). The plurality of upper heat sources (141) form part of an upper heat source module (155). The cover (154) may include a plurality of sensors positioned inside or on top to measure temperature(s) within the processing chamber (100). A plurality of lower heat sources (143) are positioned between the lower window (110) and the bottom (152). The plurality of lower heat sources (143) form part of a lower heat source module (145). In one or more embodiments, the upper window (108) is an upper dome and is formed of an energy-transmitting material such as quartz. In one or more embodiments, the lower window (110) is a lower dome and is formed of an energy-transmitting material such as quartz. A preheating ring (302) is disposed on the outside of the substrate support (106). The preheating ring (302) is supported on a ledge of the lower liner (311). The stop (304) includes a plurality of arms (305a, 305b), each having a lift pin stop where at least one of the lift pins (132) can be placed when the substrate support (106) is lowered (e.g., when lowered from a process position to a transfer position).

[0013] The upper window (108), the lower window (110), and the chamber body define at least partially an internal volume (135). The internal volume (135) has a substrate support (106) disposed therein. The substrate support (106) includes an upper surface on which a substrate (102) is disposed. The substrate support (106) is attached to a shaft (118). The shaft (118) is connected to a motion assembly (121). The motion assembly (121) includes one or more actuators and / or control devices that provide movement and / or control of the shaft (118) and / or the substrate support (106).

[0014] The substrate support (106) may include lift pin openings (107) disposed therein. The lift pin openings (107) have a size for accommodating lift pins (132) for lifting the substrate (102) from the substrate support (106) before or after the deposition process is performed.

[0015] A process kit (1010) placed in a processing chamber (100) comprises a plate (111) having a first outer surface (1012) and a second outer surface (1013) facing the first outer surface (1012). The plate (111) may be flat (as shown in FIG. 1) or may have other shapes, such as a curved shape. The second outer surface (1013) faces a substrate support (106). The process kit (1010) comprises an upper liner (1020). The upper liner (1020) comprises an annular section (1021). The upper liner (1020) includes one or more inlet openings (1023) extending from the first side of the upper liner (1020) to the inner surface (1024) of the annular section (1021), and one or more outlet openings (1025) extending from the second side of the upper liner (1020) to the inner surface (1024) of the annular section (1021).

[0016] One or more inlet openings (1023) and one or more outlet openings (1025) extend from the outer surface (1026) of the annular section (1021) of the upper liner (1020) to the inner surface (1024).

[0017] In one or more embodiments, the plate (111) is disc-shaped and the annular section (1021) is ring-shaped. The plate (111) and / or the annular section (1021) are considered to be rectangular in shape or other geometric shapes. The plate (11) may be flat (as shown in FIG. 1) or may be other shapes such as curved or tapered. The plate (111) at least partially separates the internal volume (135) into a first volume (136a) (e.g., lower volume) between the plate (111) and the substrate support (106), and a second volume (136b) (e.g., upper volume) between the plate (111) and the upper window (108). In one or more embodiments, the plate (111) is a plate (111) that fluidically isolates (e.g., partially or completely fluidly) the second volume (136b) from the first volume (136a) at least partially. In one or more embodiments, the plate (111) comprises a transparent material. In one or more embodiments, the transparent material comprises transparent quartz. One or more of other materials, such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium difluoride (CaF2), and / or other materials may be used. In one or more embodiments, the plate (111) has a transmittance of at least 50% for light having a wavelength in the range of 120 nm to 150 nm. In one or more embodiments, the plate (111) has a transmittance of at least 80% for light having a wavelength greater than 150 nm. Transmittance may be higher for wavelengths greater than 170 nm.

[0018] A flow module (112) (which may define at least a portion of one or more side walls of the processing chamber (100)) includes one or more first inlet openings (1014) that are in fluid communication with a first volume (136a) of the internal volume (135). The flow module (112) includes one or more second inlet openings (1015) that are in fluid communication with a second volume (136b) of the internal volume (135). One or more first inlet openings (1014) are in fluid communication with one or more flow gaps between the upper liner (1020) and the lower liner (311). One or more second inlet openings (1015) are in fluid communication with one or more inlet openings (1023) of the upper liner (1020). The first inlet openings (1014) are fluidly connected to one or more process gas sources (151) and one or more cleaning gas sources (153). The purge gas inlet(s) (164) are fluidically connected to one or more purge gas sources (162). One or more gas exhaust outlets (116) and one or more second gas exhaust outlets (1028) are fluidly connected to an exhaust pump (157). One or more process gases supplied using one or more process gas sources (151) may include one or more reactive gases (e.g., one or more of silicon-containing, phosphorus-containing, and / or germanium-containing gases), and / or one or more carrier gases (e.g., one or more of nitrogen (N2) and / or hydrogen (H2). One or more purge gases supplied using one or more purge gas sources (162) may include one or more inert gases (e.g., one or more of argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources (153) may include one or more of hydrogen and / or chlorine. In one or more embodiments, one or more process gases include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0019] The processing chamber (100) includes an energy source (190). In one or more embodiments, the energy source (190) includes a remote plasma source (RPS) (196), and one or more second inlet openings (1015) are fluidly connected to the RPS. The RPS (196) can generate plasma (PS1) outside the internal volume (135) and flow the plasma (PS1) into the second volume (136b). The RPS (196) of the energy source (190) includes a flow housing (191) and a series of radio frequency coils (192) (RF coils) that are at least partially wound around the flow housing (191). Plasma (PS1) can be generated by ionizing the gas (G1) and flowing the gas (G1) through the flow housing (191) to generate plasma (PS1) and supplying electric power to the series of RF coils (192). The gas (G1) used to generate the plasma (PS1) may include, but is not limited to, one or more of xenon (Xe2), fluorine (F2), krypton fluoride (Kr2), neon (Ne2), helium (H2), argon (Ar2), bromine (Br2), chlorine (Cl2), iodine (I2), and / or any mixture thereof (e.g., xenon and neon, or krypton fluoride). Other materials are considered for the gas (G1) to generate the plasma (PS1). The plasma (PS1) flows from the RPS (196) of the energy source (190) into the upper volume (136b) through one or more second inlet openings (1015) and one or more inlet openings (1023) of the upper liner (1020). Next, plasma (PS1) can flow into the exhaust system (178) from one or more outflow openings (1025) through one or more second gas exhaust outlets (1028).

[0020] One or more gas exhaust outlets (116) and one or more second gas exhaust outlets (1028) are fluidly connected to an exhaust system (178). The exhaust system (178) fluidly connects one or more gas exhaust outlets (116) and one or more second gas exhaust outlets (1028) to an exhaust pump (157). The exhaust system (178) can assist in the controlled deposition of a layer on a substrate (102). The exhaust system (178) is positioned on the opposite side of the processing chamber (100) to the flow module (112). The present disclosure takes into account that one or more purge gases (P2) are supplied to a purge volume (138) (through a plurality of purge gas inlets (164)) during a deposition operation and can be exhausted from the purge volume (138). The exhaust system (178) can control the exhaust of plasma (PS1), one or more process gases (P1), and / or one or more purge gases (P2).

[0021] In one or more embodiments, as illustrated in FIG. 1, one or more inlet openings (1023) are oriented in a horizontal orientation, and one or more outlet openings (1025) are oriented in a partially angled orientation. The present disclosure takes into account that one or more inlet and / or outlet openings (1023, 1025) may be oriented in a horizontal orientation, or may be oriented in an angled orientation (e.g., not parallel to the horizontal), and / or may include one or more transition sections (e.g., transition sections illustrated for one or more first inlet openings (1014) and one or more gas exhaust outlets (116)).

[0022] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases (P1) flow through one or more first inlet openings (1014), through one or more gaps, and into the first volume (136a) of the internal volume (135) and flow over the substrate (102). During the deposition operation, plasma (PS1) flows through one or more second inlet openings (1015), through one or more inlet openings (1023) of the upper liner (1020), and into the second volume (136b) of the internal volume (135). One or more purge gases (P2) flow simultaneously with the flow of one or more process gases (P1) and plasma (PS1). While the plasma (PS1) resides in the second volume (136b), the plasma (PS1) emits light (L1). In one or more embodiments, the light (L1) is ultraviolet (UV) light. Light (L1) is emitted to one or more of the substrate (102), substrate support (106), preheating ring (302), and / or one or more process gases (P1) to facilitate the activation of one or more process gases (P1). The activation enhances the processing operation (e.g., deposition and / or cleaning). For example, the flow of plasma (PS1) through the second volume (136b) facilitates enhanced gas activation of one or more process gases (P1), an increased film growth rate on the substrate (102), and enhanced deposition uniformity. One or more process gases (P1) are exhausted through the gaps between the upper liner (1020) and the lower liner (311) and through one or more gas exhaust outlets (116). Plasma (PS1) is exhausted through one or more exhaust openings (1025) and one or more second gas exhaust outlets (1028).Additionally or alternatively, one or more outflow openings (1025) may be fluidly connected to one or more gas exhaust outlets (116), and plasma (PS1) may be exhausted through the same gaps between the upper liner (1020) and the lower liner (311), and through one or more gas exhaust outlets (116) identical to one or more process gases (P1). In the present disclosure, consideration is given to the possibility that one or more purge gases (P2) may be exhausted separately through one or more gas exhaust outlets (116) identical to one or more gas exhaust outlets, or through one or more third gas exhaust outlets separated from one or more gas exhaust outlets (116).

[0023] As described, the energy source (190) is operable to generate a plasma (PS1) to emit light (L1) (e.g., UV light). The wavelength of the light (L1) (e.g., UV light) emitted by the plasma (PS1) is in the range of 100 nm to 355 nm. In one or more embodiments, the wavelength is in the range of 150 nm to 250 nm, for example, in the range of 150 nm to 200 nm. In one or more embodiments, the wavelength of the light (L1) is in the range of 169 nm to 175 nm. In one or more embodiments, the wavelength of the light (L1) is in the range of 171.5 nm to 172.5 nm, for example, about 172 nm. Light (L1) emitted by the plasma (PS1) propagates through the plate (111) and onto one or more of the substrate (102), one or more process gases (P1), a preheating ring (302), and / or the substrate support (106) to activate one or more process gases (P1) when target temperatures of less than 500 degrees Celsius are used. In one or more embodiments, the substrate (102) is heated to a target temperature of less than 500 degrees Celsius during processing. The substrate (102) may be heated by the light (L1) in conjunction with heating from upper heat sources (141) and / or lower heat sources (143). In one or more embodiments, the support surface (109) of the substrate support (106) is positioned at a distance (D1) of 20 mm or less from the lower surface (1018) of the plate (111). In one or more embodiments, the distance (D1) is within the range of 5 mm to 20 mm. The lower surface (1018) may be part of the second outer surface (1013). The distance (D1) facilitates enhanced gas activation and reduced interference with the flow of one or more process gases (P1).

[0024] During processing, in one or more embodiments, the substrate (102) is heated to a target temperature of less than 500 degrees Celsius. In one or more embodiments, the target temperature for the substrate (102) is 400 degrees Celsius or less. In one or more embodiments, the target temperature for the substrate (102) is within the range of 380 degrees Celsius to less than 500 degrees Celsius, for example, within the range of 400 degrees Celsius to less than 500 degrees Celsius.

[0025] FIG. 2 is a schematic partial side cross-sectional view of a processing chamber (200) according to one or more embodiments. The processing chamber (200) is similar to the processing chamber (100) shown in FIG. 1 and includes one or more of the modes, features, components, attributes, and / or operations thereof. The processing chamber (200) is shown in FIG. 2 as being in a processing state.

[0026] The processing chamber (200) includes an energy source (210) disposed within a second volume (136b). The energy source (210) includes an array of electrodes (201, 202) disposed within the second volume (136b). The array of electrodes (201, 202) at least partially defines a plurality of flow openings (203) (e.g., microcavities) between the electrodes (201, 202). In the embodiment illustrated in FIG. 2, the gas (G1) flowing through the flow housing (191) in FIG. 1 flows into the second volume (136b) and into the flow openings (203). By using the electrodes (201, 202), a voltage is generated across the flow openings (203) by causing a current (e.g., RF current) to flow through the gas in the flow openings (203). The current activates the gas in the flow openings (203) and generates a plasma (PS1) that emits light (L1). Individual flow openings (203) and / or groups of flow openings (203) can be controlled independently of each other so that different flow openings (203) or groups of flow openings (203) generate UV-emitting plasma at different intensities and / or different wavelengths. By controlling the flow openings (203) independently, the substrate (102) can be exposed to UV light of different intensities and wavelengths along different regions on the surface of the substrate (102), which can control processing uniformity (e.g., deposition uniformity) in different regions of the substrate (102).

[0027] FIG. 3 is a schematic partial side cross-sectional view of a processing chamber (300) according to one or more embodiments. The processing chamber (300) is similar to the processing chamber (100) shown in FIG. 1 and includes one or more of the modes, features, components, attributes, and / or operations thereof. The processing chamber (300) is shown in FIG. 3 as being in a processing state.

[0028] The processing chamber (300) includes an energy source (310). The energy source (310) includes one or more plasma lamps (315) disposed within a second volume (136b). In one or more embodiments, one or more plasma lamps (315) are supported on a plate (111). In one or more embodiments, one or more plasma lamps (331) are disc-shaped. One or more plasma lamps (331) are considered to be rectangular in shape or other geometric shapes. One or more plasma lamps (331) may be aligned with an azimuth section of the substrate support (106) and / or the substrate (102) (as shown in FIG. 6 described below). An array of plasma lamps may exist that are aligned with a plurality of sections of the substrate support (106) and / or the substrate (102), respectively (as shown in FIG. 7 described below). One or more plasma lamps (311) may be any type of lamp known to generate UV light, including mercury lamps, xenon lamps, neon lamps, helium lamps, as well as any other lamp capable of generating UV light. In one or more embodiments, one or more plasma lamps (311) may include bulbs, rods, tubes, electrodes, microcavities, or any other chamber that may contain a gas capable of being ignited into plasma to emit UV light.

[0029] FIG. 4 is a schematic enlarged cross-sectional view of one or more plasma lamps (315) shown in FIG. 3 according to one or more embodiments. The plasma lamp (315) comprises a power supply (401), an array of electrodes (402a, 402b) (a pair is shown), a plurality of cavities (403) (e.g., microcavities), a plurality of spacers (404), a plurality of transparent window sections (405), and a tube (406). The tube (406) is sealed and filled with gas (G1). In one or more embodiments, the transparent window sections (405) comprise quartz, such as fused silica. The cavities (403) are aligned between the electrodes (402, 402b).

[0030] An array of electrodes (402a, 402b) is operable to generate a voltage across a plurality of cavities (403) (e.g., by allowing a current, such as an RF current, to flow through a power supply (401). The current travels from the first electrode (402a) to the second electrode (402b) through a plasma lamp (315). Gas (G1) (may include one or more of xenon (Xe2), neon (Ne2), helium (He2), fluorine (F2), argon (Ar2), bromine (Br2), chlorine (Cl2), iodine (I2), krypton (Kr2), and / or any mixture thereof). As described above, other materials are considered for the gas (G1) placed in the inner volume (407) of the lamp (315). The inner volume (407) is fluidly connected to the cavities (403) and the tube (406). The inner volume (407) is surrounded by transparent window sections (405) that are at least partially spaced apart from each other by spacers (404). When current passes through the plasma lamp (315), voltage is applied across the gas (G1), the gas (G1) is activated, and a plasma (PS1) is generated that emits light (L1) (e.g., UV light). The light (L1) is emitted through the transparent window sections (503). The transparent window sections (405) may have various transmittances and / or refractive indices that affect the intensity and / or wavelength of the light (L1) reflected by or transmitted through the transparent window sections (405). Electrodes (402a, 402b) may be used to measure the impedance of the plasma (PS1).

[0031] In one or more embodiments, the power supply unit (401) of the plasma lamp (315) supplies average power within the range of 20 W to 30 W, for example, about 25 W. In one or more embodiments, the power supply unit (401) supplies peak power exceeding 600 W. In one or more embodiments, the thickness (T1) of the plasma lamp (315) is less than 10 mm, for example, 6 mm or less.

[0032] FIGS. 5 through 7 are schematic partial top views of plasma lamps (315, 610, 710) on the substrate (102) shown in FIG. 3. For visual clarity, various other parts of the processing chamber (3000), such as the plate (111), are not shown in FIGS. 5 through 7.

[0033] FIG. 5 is a schematic partial top view of the plasma lamp (315) illustrated in FIG. 4 according to one or more embodiments. The plasma lamp (315) is operable to emit light (L1) (e.g., UV light) across the entire upper surface of the substrate (102) during processing. The plasma lamp (315) may have a circular shape (e.g., a disc shape). In the present disclosure, it is taken into account that other apparatuses and methods for generating plasma described herein (e.g., an energy source (190) and / or an energy source (210)) may be used to emit light (L1) across the entire upper surface of the substrate (102). The dimensions of the plasma lamp (e.g., diameter) may be larger than the dimensions (e.g., diameter) of the substrate (102). The first electrode (402a) and / or the second electrode (402b) comprises a plurality of intersecting arched (e.g., circular) sections (501) and a plurality of radial sections (502). In one or more embodiments, the arched sections (501) are concentric with each other at different radii. In one or more embodiments, the first electrode (402a) and / or the second electrode (402b) comprises a mesh. In one or more embodiments, the plasma lamp (315) is a sealed lamp that seals the gas (G1) and the electrodes (402a, 402b) inside. The intensity of the plasma generated in the plasma lamp (315) can be controlled (e.g., regulated) by controlling the voltage applied to the electrodes (40a, 402b). Thus, the intensity of the generated light (L1) can be controlled (e.g., regulated) by controlling the voltage applied to the electrodes (402a, 402b).

[0034] FIG. 6 is a schematic partial top view of a plasma lamp (610) according to one or more embodiments. The plasma lamp (610) is operable to emit light (L1) across a section (e.g., an azimuth section) of the upper surface of a substrate (102) during processing. In the present disclosure, other apparatuses and methods for generating plasma described herein (e.g., an energy source (190) and / or an energy source (210)) may be used to emit light (L1) across a portion of the upper surface of the substrate (102). The substrate (102) may be rotated during processing, so that a portion thereof is scanned across the entire upper surface of the substrate (102). The substrate (102) may be rotated at various speeds to determine how portions of the substrate (102) are exposed to light (L1) emitted by the plasma lamp (610). The plasma lamp (610) may have a shape such as a sector of a circle (e.g., a pie shape). The plasma lamp (610) includes a first electrode (602a) and a second electrode (602b). The dimensions of the plasma lamp (e.g., radius) may be smaller than the dimensions of the substrate (102) (e.g., diameter). The first electrode (602a) and / or the second electrode (602b) include a plurality of intersecting arched (e.g., arc) sections (601) and a plurality of radial sections (603). In one or more embodiments, the first electrode (602a) and / or the second electrode (602b) include a mesh.

[0035] FIG. 7 is a schematic partial top view of a plurality of plasma lamps (710a-710d) according to one or more embodiments. Each plasma lamp (710a-710d) emits light (L1) (e.g., light) across each portion of the upper surface of the substrate (102). Each plasma lamp (710a-710d) can be independently controlled to emit light (L1). For example, the plasma lamps (710a-710d) can be independently turned on and off. As another example, the plasma lamps (710a-710d) can independently emit light (L1) having different wavelengths and / or different intensities across different regions of the upper surface of the substrate (102). The lamps (710a-710d) can be controlled independently, for example, by controlling the amplitude of the RF current, the value of the voltage across the gas (G1), and / or the amount of gas (G1) for each individual lamp (710a-710d).

[0036] Multiple lamps (710a-710d) are depicted in a rectangular shape. Multiple plasma lamps (710a-710d) may be other geometric shapes such as discs, hexagons, and octagons. Other geometric shapes are considered. Any number of plasma lamps may be placed on the substrate (102), such as one plasma lamp (as shown in FIG. 5 and 6), two plasma lamps, three plasma lamps, four plasma lamps (as shown in FIG. 7), five plasma lamps, six plasma lamps, or any other number of plasma lamps.

[0037] The first electrode (702a) and / or the second electrode (702b) of each lamp (710a-710d) comprises a plurality of sections (701) that intersect each other. The sections (701) form a grid such as a honeycomb grid. The sections (701) are hexagonal in shape. Other geometric shapes (e.g., circles) are considered for the sections (701). In one or more embodiments, the first electrode (702a) and / or the second electrode (702b) comprises a mesh.

[0038] FIG. 8 is a schematic flowchart of a substrate processing method (800) according to one or more embodiments. The method (800) may be performed in relation to any of the previously described processing chambers (100, 200, or 300) or other processing chambers.

[0039] The operation (801) includes heating a substrate positioned on a substrate support. In one or more embodiments, the substrate is heated to a target temperature of 500 degrees or less.

[0040] Operation (802) involves supplying plasma within the internal volume of a processing chamber. For example, plasma can be generated in various ways, such as those described in relation to process chambers (100, 200, or 300). For example, plasma can be generated by the RPS (196) shown in FIG. 1 and flow into the second volume (136b). As another example, plasma can be generated within the second volume (136b) using a series of flow openings (203) (e.g., cavities) shown in FIG. 2. As a further example, plasma can be generated using one or more of the plasma lamps (315, 610, 710a-710d) shown in FIG. 3 through 7. Supplying plasma involves applying voltage across the gas (e.g., gas (G1)). The voltage can be constant (using direct current (DC)) or variable. For example, the voltage may vary with respect to amplitude, frequency, and / or phase. The voltage may be pulsed. The pulsing may use a variable frequency. The gas may be in flow or contained within a volume. In one or more embodiments, the applied voltage is in the range of 10 V to 5000 V. The amount of the applied voltage may vary based, for example, the distance between the electrodes, the composition of the gas, and the pressure of the gas.

[0041] Operation (803) involves flowing one or more process gases over a substrate. In one or more embodiments, the plasma within the internal volume is fluidically isolated from one or more process gases by a plate. The plasma of operation (802) emits UV light toward one or more of the substrate, the substrate support, or one or more process gases. For example, in operation (802), UV light may be emitted toward the substrate to activate the surface(s) of the substrate prior to the flow of one or more process gases in operation (803). Prior to operation (802), one or more cleaning gases (e.g., hydrogen (H2)) may flow, and the UV light of operation (802) may activate one or more cleaning gases (e.g., to generate hydrogen radicals) to pre-clean the surface(s) of the substrate prior to operation (803). Pre-cleaning may remove contaminants from the substrate.

[0042] Operation (804) includes depositing one or more layers on the upper surface of a substrate. One or more layers may be formed when one or more process gases flow over the substrate. The plasma supplied in operation (802) may reside in the process before, during, and / or after the deposition of one or more layers. For example, the plasma may be supplied to remove (e.g., burn) materials (e.g., organic materials and / or carbon) within the processing chamber and / or on the substrate.

[0043] FIG. 9 is a schematic partial side cross-sectional view of a processing chamber (900) according to one or more embodiments. The processing chamber (900) is similar to the processing chamber (100) shown in FIG. 1 and includes one or more of the modes, features, components, attributes, and / or operations thereof. The processing chamber (200) is shown in FIG. 2 as being in a processing state.

[0044] The second volume (136b) of the processing chamber (900) is filled with gas (G1), and an array of electrodes (902, 904) is placed in the second volume (136b). The gas (G1) is sealed into the second volume (136b) during processing, and the electrodes (902, 904) can apply voltage to the gas (G1) to ignite the plasma (PS1). An inlet valve (910) and an outlet valve (911) are fluidly connected to the second volume (136b) and can be used to supply gas (G1) into the second volume (136b) and to exhaust gas (G1) from the second volume (136b). For example, during a machine stop time, the outflow valve (911) may be opened to exhaust gas (G1) from the second volume (136b), and after maintenance is performed, the inflow valve (910) may be opened (with the outflow valve (9111) closed) to refill the gas (G1) into the second volume (136b). One or more sensors (915) (e.g., one or more pressure sensors) are operable to measure parameters (e.g., pressure) of the gas (G1) in the second volume (136b).

[0045] The advantages of the present disclosure include enhanced gas activation, increased film growth rates, and enhanced deposition uniformity for low-temperature deposition operations, for example, using low target temperatures for substrates. These advantages may be facilitated, for example, for complementary field-effect transistor (CFET) operations. For example, UV light having a wavelength in the range of 150 nm to 250 nm facilitates gas activation. Additionally, it is advantageous to include light (L1) and direct it toward one or more of a substrate (102), a substrate support (106), a preheating ring (302), and / or one or more process gases (P1) for gas activation, which facilitates high-energy photons of light (L1) being absorbed by one or more of the substrate (102), the substrate support (106), the preheating ring (302), and / or one or more process gases (P1).

[0046] One or more embodiments disclosed herein are considered to be combinable. For example, one or more embodiments, features, components, operations, and / or attributes of a processing chamber (100), a processing chamber (200), a processing chamber (300), a controller (120), an energy source (190), an energy source (210), an energy source (310), plasma lamp(s) (315), a plasma lamp (610), plasma lamps (710a-710d), a method (800), and / or a processing chamber (900) may be combined. Furthermore, one or more embodiments disclosed herein are considered to include some or all of the aforementioned advantages.

[0047] Although the foregoing relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope thereof, the scope thereof is determined by the following claims.

Claims

Claim 1 A processing chamber applicable to semiconductor manufacturing, comprising: one or more sidewalls; a window defining at least partially of an internal volume; a substrate support disposed within the internal volume; one or more heat sources operable to heat the internal volume; and a plate disposed within the internal volume between the window and the substrate support ― the plate defines the internal volume: A first volume between the plate and the substrate support, and A processing chamber comprising at least partially separating the second volume between the plate and the window; and an energy source operable to supply plasma between the plate and the window. Claim 2 In claim 1, the energy source is a processing chamber operable to emit ultraviolet (UV) light having a wavelength within the range of 100 nm to 355 nm. Claim 3 In paragraph 2, the processing chamber, wherein the wavelength is within the range of 150 nm to 250 nm. Claim 4 In paragraph 3, the processing chamber, wherein the wavelength is within the range of 169 nm to 175 nm. Claim 5 A processing chamber according to claim 1, wherein the plate comprises a transparent material and the plate has a transmittance of at least 80% for light having a wavelength of 150 nm or more. Claim 6 In claim 1, the energy source comprises one or more mercury lamps disposed within the second volume, and the one or more mercury lamps are operable to generate the plasma within one or more bulbs of each of the one or more mercury lamps, in a processing chamber. Claim 7 In claim 1, the energy source comprises a fluid housing disposed outside the internal volume; and one or more radio frequency coils wound at least partially around the fluid housing, a processing chamber. Claim 8 In claim 1, the energy source comprises an array of electrodes disposed within the second volume, and the array of electrodes at least partially defines flow openings between the electrodes, a processing chamber. Claim 9 A processing chamber applicable to semiconductor manufacturing, comprising: one or more sidewalls; a window defining at least partially of an internal volume; a substrate support disposed within the internal volume; a plate disposed between the window and the substrate support within the internal volume; and an energy source disposed between the plate and the window — said energy source operable to emit ultraviolet (UV) light having a wavelength in the range of 100 nm to 355 nm —. Claim 10 In claim 9, the energy source comprises an array of electrodes and a plurality of cavities, and the array of electrodes is operable to generate a voltage across the plurality of cavities, a processing chamber. Claim 11 In claim 9, the energy source comprises a plasma lamp aligned with an azimuth section of the substrate support, in a processing chamber. Claim 12 In claim 9, the energy source comprises a processing chamber including a plurality of plasma lamps each aligned with a plurality of sections of the substrate support. Claim 13 In Clause 12, the plurality of plasma lamps are supported on the plate, in a processing chamber. Claim 14 In claim 13, the plate comprises a transparent material, and the plate has a transmittance of at least 80% for light having a wavelength of 150 nm or more, a processing chamber. Claim 15 In claim 9, a processing chamber further comprising: an inlet valve fluidly communicating with the volume between the window and the plate; an outlet valve fluidly communicating with the volume; and one or more sensors operable to measure parameters within the volume. Claim 16 A method for processing a substrate, comprising the steps of: heating a substrate positioned on a substrate support; supplying plasma within the internal volume of a processing chamber — the supplying step includes applying a voltage across the gas —; flowing one or more process gases over the substrate; and depositing one or more layers on the substrate. Claim 17 A method according to claim 16, wherein the plasma within the internal volume is fluidically isolated from the one or more process gases by a plate, and the plasma emits ultraviolet (UV) light toward one or more of the substrate, the substrate support, or the one or more process gases, and the UV light has a wavelength in the range of 100 nm to 355 nm. Claim 18 In claim 17, the method wherein the wavelength is within the range of 150 nm to 200 nm. Claim 19 A method according to claim 17, wherein the supporting surface of the substrate support is disposed at a distance of 20 mm or less from the lower surface of the plate. Claim 20 In paragraph 16, the method wherein the substrate is heated to a target temperature of less than 500 degrees Celsius.

Images