Through-electrode substrate and method for manufacturing a through-electrode substrate

Abstract

A through-electrode substrate comprises a substrate including a first surface, a second surface located opposite to the first surface, and a plurality of through holes penetrating from the first surface to the second surface, and a plurality of through electrodes extending from the first surface through the through holes to the second surface. Each of the plurality of through electrodes includes a plurality of internal portions located inside the plurality of through holes, a first portion located on the first surface and connected to the plurality of internal portions, and a second portion located on the second surface and connected to the plurality of internal portions. Each of the first portions of the plurality of through electrodes has a contour that surrounds the plurality of through holes when viewed in a planar view.

Description

Technology Field

[0001] An embodiment of the present disclosure relates to a through-electrode substrate and a method for manufacturing a through-electrode substrate. Background Technology

[0002] Through-electrode substrates are used for various purposes. A through-electrode substrate is a component comprising a substrate including a first surface and a second surface, a through hole formed in the substrate, and a through electrode located in the through hole. A through-electrode substrate is used, for example, as an interposer. An interposer is a component interposed between two electrical components. For example, a through-electrode substrate is interposed between two LSI chips in the thickness direction. A through-electrode substrate may also be interposed between a device such as an LSI chip and a mounting board such as a motherboard. A through-electrode substrate is also used as a component constituting passive components such as inductors and capacitors.

[0003] For example, as disclosed in Patent Document 1, the through electrode of the through electrode substrate has various structures. A first example of the through electrode is an example in which the entire through hole is filled with a conductive material such as copper. A second example is an example in which a layer of a conductive material such as copper is formed on the wall of the through hole. A third example is an example in which a layer of a conductive material such as copper is formed on the wall of the through hole, and a layer of a conductive material that closes the through hole is also formed along a first surface or a second surface of the substrate. In the second and third examples, a resin material is filled in the space of the through hole where the conductive material is not present. Prior art literature

[0004] International Publication No. 2022 / 173057 The problem to be solved

[0005] It is required to increase the maximum value of the current that can be flowed through the through electrode (hereinafter also referred to as the allowable current). In the through electrode of the first example, the allowable current of the through electrode increases as the dimension of the through hole in the plane direction increases. However, as the dimension of the through hole increases, defects such as voids are more likely to occur in the conductive material filled in the through hole. In the through electrodes of the second and third examples as well, the allowable current of the through electrode increases as the dimension of the through hole in the plane direction increases. As the dimension of the through hole increases, defects such as voids are more likely to occur in the resin material filled in the through hole.

[0006] The embodiments of the present disclosure aim to provide a through-electrode substrate and a method for manufacturing the through-electrode substrate that can effectively solve such problems. means of solving the problem

[0007] Embodiments of the present disclosure relate to the following [1] to

[23] .

[0008] [1] It is a through-electrode substrate, and

[0009] A substrate comprising a first surface, a second surface located on the opposite side of the first surface, and a plurality of through holes penetrating from the first surface to the second surface,

[0010] A plurality of through electrodes extending from the first surface to the second surface through the through hole, and

[0011] Each of the plurality of the above-mentioned through electrodes comprises a plurality of internal portions located inside the plurality of the above-mentioned through holes, a first portion located on the first surface and connected to the plurality of the above-mentioned internal portions, and a second portion located on the second surface and connected to the plurality of the above-mentioned internal portions.

[0012] A through electrode substrate, wherein each of the first portions of the plurality of through electrodes has a contour that surrounds the plurality of through holes when viewed in a planar view.

[0013] [2] In the through electrode substrate described in [1], the plurality of through holes may each have a wall surface including a first end connected to the first surface, a second end connected to the second surface, and a minimum part located between the first end and the second end, and the through hole may have a minimum dimension that is the minimum value of the dimension of the through hole in the direction of the first surface in the minimum part, and the plurality of internal parts may each have a closing part that closes the through hole at least in the minimum part, a third part located on the wall surface between the first part and the closing part, and a fourth part located on the wall surface between the second part and the closing part.

[0014] [3] In the through electrode substrate described in [2], the closed portion may include a first closed surface and a second closed surface, the first closed surface may be a surface of the closed portion facing the first surface, and the second closed surface may be a surface of the closed portion facing the second surface, and the through electrode may have a first distance which is the maximum value of the distance from the first surface to the first closed surface in the thickness direction of the substrate, and a second distance which is the maximum value of the distance from the second surface to the second closed surface in the thickness direction of the substrate, and the ratio of the first distance to the thickness of the substrate may be 0.10 or more, and the ratio of the second distance to the thickness of the substrate may be 0.10 or more.

[0015] [4] The through electrode substrate described in [2] or [3] may have a plurality of internal resins located inside each of the plurality of through holes, and each of the plurality of internal resins may include a first internal resin located inside the third part and a second internal resin located inside the fourth part.

[0016] [5] In the through electrode substrate described in [1], each of the plurality of through holes may have a wall surface including a first end connected to the first surface and a second end connected to the second surface, and each of the plurality of internal parts may be located on the wall surface so as to extend from the first end to the second end, and the through electrode substrate may have a plurality of internal resins located inside the internal part of the through electrode within each of the plurality of through holes.

[0017] [6] In the through electrode substrate described in [5], each of the plurality of through holes may include a minimum portion located between the first and second portions, and the through holes may have a minimum dimension that is the minimum value of the dimension of the through hole in the plane direction of the first surface in the minimum portion.

[0018] [7] In any one of [4] to [6], the first portion of each of the plurality of through electrodes may each include a plurality of openings in which the internal resin is located.

[0019] [8] In the through electrode substrate described in [1], the ratio of the thickness of the inner portion to the thickness of the substrate may be 0.80 or more and 1.20 or less.

[0020] [9] A through electrode substrate described in any one of [1] to [8] may have a plurality of first conductive layers connected to each of the first portions of the plurality of through electrodes, and a first resin layer located between the first portions of the plurality of through electrodes and the plurality of first conductive layers in the thickness direction of the substrate.

[0021]

[10] In the through electrode substrate described in [9], the plurality of first conductive layers may each have a contour that surrounds the plurality of through holes when viewed in a planar view.

[0022]

[11] The through electrode substrate described in

[10] may have a plurality of third conductive layers connected to one of the first conductive layers, and a third resin layer located between one of the first conductive layers and the plurality of third conductive layers in the thickness direction of the substrate.

[0023]

[12] In the through electrode substrate described in

[10] or

[11] , the plurality of through electrodes may include a first through electrode and a second through electrode adjacent to the first through electrode when viewed in a plane, and the first conductive layer connected to the first through electrode may be extended outwardly beyond the contour of the first portion of the first through electrode, and the first portion of the second through electrode may be extended outwardly beyond the contour of the first conductive layer connected to the second through electrode, and in the thickness direction of the substrate, a portion of the first conductive layer connected to the first through electrode and a portion of the first portion of the second through electrode may be facing each other.

[0024]

[13] In any one of [9] to

[12] , the through electrode substrate described therein may include an opening having a fourth dimension when viewed in a planar view, where a part of the first conductive layer is located, and the through hole may have a first dimension on the first surface, and the fourth dimension may be larger than the first dimension.

[0025]

[14] It is a through-electrode substrate, and

[0026] A substrate comprising a first surface, a second surface located on the opposite side of the first surface, and a plurality of through holes penetrating from the first surface to the second surface,

[0027] A plurality of through electrodes extending from the first surface through the through hole to the second surface, and

[0028] A first wiring layer is provided, which is located on the first surface and includes at least one insulating layer and at least one conductive layer, and

[0029] Each of the above plurality of through electrodes includes a plurality of internal portions located inside the plurality of through holes, and

[0030] The ratio of the thickness of the internal portion to the thickness of the substrate is 0.80 or more and 1.20 or less, and

[0031] The above at least one insulating layer comprises a first resin layer located on the first surface, and

[0032] The first resin layer includes a plurality of openings, and each of the plurality of openings overlaps the inner portion when viewed in a planar view, and

[0033] The first resin layer, when viewed in a planar view, overlaps the boundary between the wall surface of the through hole and the inner part, and

[0034] A through-electrode substrate comprising at least one conductive layer, the conductive layer being electrically connected to a plurality of internal portions.

[0035]

[15] In the through electrode substrate described in

[14] , the at least one conductive layer may include a first conductive layer connected to a plurality of internal portions in a plurality of openings of the first resin layer, and the first conductive layer may be a conductive layer electrically connected to a plurality of internal portions.

[0036]

[16] In the through electrode substrate described in

[14] , the at least one conductive layer may include a plurality of first conductive layers, each of which is connected to the inner portion of a plurality of openings in the first resin layer, and a conductive layer electrically connected to a plurality of first conductive layers.

[0037]

[17] In a through electrode substrate described in any one of [1] to

[16] , the plurality of through electrodes may be arranged in parallel at a first pitch in the plane direction of the first surface, and the plurality of through holes in which the plurality of internal parts included in one of the through electrodes are located may be arranged in parallel at a second pitch in the plane direction of the first surface, and the ratio of the first pitch to the second pitch may be 2.0 or higher.

[0038]

[18] In the through electrode substrate described in

[17] , the ratio of the first pitch to the second pitch may be 5.0 or less.

[0039]

[19]

[17] or

[18] In the through electrode substrate described therein, the through hole may have a first dimension on the first surface, and the ratio of the second pitch to the first dimension may be 1.5 or more.

[0040]

[20] In the through electrode substrate described in

[19] , the first dimension may be 50 μm or more and 100 μm or less.

[0041]

[21] It is a circuit board, and

[0042] [1] to

[20] A through-electrode substrate described in any one of [1] to

[20] , and

[0043] A mounting substrate having a plurality of elements electrically connected to the through electrodes of the through electrode substrate.

[0044]

[22] A method for manufacturing a through-electrode substrate,

[0045] A process for preparing a substrate comprising a first surface, a second surface located on the opposite side of the first surface, and a through hole penetrating from the first surface to the second surface, and

[0046] A through electrode forming process is provided for forming a plurality of through electrodes extending from the first surface to the second surface through the through hole, and

[0047] Each of the plurality of the above-mentioned through electrodes comprises a plurality of internal portions located inside the plurality of the above-mentioned through holes, a first portion located on the first surface and connected to the plurality of the above-mentioned internal portions, and a second portion located on the second surface and connected to the plurality of the above-mentioned internal portions.

[0048] A method for manufacturing a through electrode substrate, wherein each of the first portions of the plurality of through electrodes has a contour that surrounds the plurality of through holes when viewed in a planar view.

[0049]

[23] A method for manufacturing a through-electrode substrate,

[0050] A process for preparing a substrate comprising a first surface, a second surface located on the opposite side of the first surface, and a through hole penetrating from the first surface to the second surface, and

[0051] A through electrode forming process for forming a plurality of through electrodes extending from the first surface to the second surface through the through hole, and

[0052] A process for forming a first wiring layer located on the first surface and comprising at least one insulating layer and at least one conductive layer, and

[0053] Each of the plurality of the above-mentioned penetrating electrodes includes a plurality of internal portions located inside the plurality of the above-mentioned penetrating holes, and

[0054] Each of the above-mentioned internal parts is a field via, and

[0055] The above at least one insulating layer comprises a first resin layer located on the first surface, and

[0056] The first resin layer includes a plurality of openings, and each of the plurality of openings overlaps the inner portion when viewed in a planar view, and

[0057] The first resin layer, when viewed in a planar view, overlaps the boundary between the wall surface of the through hole and the inner part, and

[0058] A method for manufacturing a through-electrode substrate, wherein the above-mentioned at least one conductive layer comprises a conductive layer electrically connected to a plurality of internal portions. Effects of the invention

[0059] According to an embodiment of the present disclosure, the allowable current of the through electrode can be increased while suppressing defects such as voids. Brief explanation of the drawing

[0060] FIG. 1 is a plan view illustrating a through-electrode substrate according to one embodiment. Figure 2 is a plan view illustrating a part of the through-electrode substrate of Figure 1. Figure 3 is a cross-sectional view along line III-III of the through-electrode substrate of Figure 2. FIG. 4 is a cross-sectional view illustrating an example of a through electrode of a through electrode substrate. Figure 5 is a cross-sectional view illustrating an example of a through hole in a substrate. FIG. 6 is a cross-sectional view illustrating an example of a penetrating electrode. FIG. 7 is a cross-sectional view illustrating an example of the dimensions of a penetrating electrode. FIG. 8 is a cross-sectional view illustrating an example of a process for preparing a substrate. FIG. 9 is a cross-sectional view illustrating an example of a seed layer formation process. FIG. 10 is a cross-sectional view illustrating an example of a plating layer formation process. FIG. 11 is a cross-sectional view illustrating an example of a plating layer formation process. FIG. 12 is a cross-sectional view illustrating an example of a plating layer formation process. FIG. 13 is a cross-sectional view illustrating an example of a process for removing a portion of a seed layer. FIG. 14 is a cross-sectional view illustrating an example of a resin layer formation process. FIG. 15 is a cross-sectional view illustrating one modified example of a through-electrode of a through-electrode substrate. FIG. 16 is a cross-sectional view illustrating one modified example of a through-electrode of a through-electrode substrate. FIG. 17 is a cross-sectional view illustrating one modified example of a through-electrode of a through-electrode substrate. FIG. 18 is a cross-sectional view illustrating one modified example of a through electrode of a through electrode substrate. FIG. 19 is a plan view illustrating one modified example of a through-electrode substrate. FIG. 20 is a cross-sectional view along line XX-XX of the through-electrode substrate of FIG. 19. FIG. 21 is a cross-sectional view along line XXI-XXI of the through-electrode substrate of FIG. 19. FIG. 22 is a cross-sectional view illustrating one modified example of a through-electrode substrate. FIG. 23 is a cross-sectional view illustrating one modified example of a through-electrode substrate. FIG. 24 is a cross-sectional view illustrating one modified example of a through-electrode substrate. FIG. 25 is a cross-sectional view illustrating one modified example of a through-electrode substrate. FIG. 26 is a cross-sectional view illustrating one modified example of a through-electrode substrate. FIG. 27 is a plan view illustrating one modified example of a through-electrode substrate. FIG. 28 is a drawing illustrating an example of a product in which a through-electrode substrate is mounted. FIG. 29 is a table showing the evaluation results of Examples 1 to 5. FIG. 30 is a cross-sectional view illustrating one modified example of a through-electrode substrate. FIG. 31 is a plan view illustrating one modified example of a through-electrode substrate. FIG. 32 is a cross-sectional view along line XXXII-XXXII of the through-electrode substrate of FIG. 31. FIG. 33 is a plan view illustrating one modified example of a through-electrode substrate. FIG. 34 is a cross-sectional view along line XXXIV-XXXIV of the through-electrode substrate of FIG. 33. FIG. 35 is a cross-sectional view illustrating one modified example of a through-electrode substrate. FIG. 36 is a cross-sectional view illustrating one modified example of a through-electrode substrate. FIG. 37 is a cross-sectional view illustrating one modified example of a through-electrode substrate. FIG. 38 is a cross-sectional view illustrating one modified example of a through-electrode substrate. Specific details for implementing the invention

[0061] The composition of a through-electrode substrate and the method of manufacturing the same will be described in detail with reference to the drawings. The embodiments described below are examples of embodiments of the present disclosure, and the present disclosure is not to be interpreted as being limited to these embodiments. In this specification, terms such as "substrate," "substrate," "sheet," and "film" are not distinguished from one another solely on the basis of differences in designation. For example, "substrate" is a concept that includes a member that can be called a sheet or a film. "Surface" refers to a surface that coincides with the planar direction of the plate-shaped member when the plate-shaped member is viewed in an overall and broad sense. The normal direction used for the plate-shaped member refers to the normal direction to the surface of the member. Terms used in this specification to specify shapes, geometric conditions, and their degrees, such as "parallel" or "orthogonal," and values ​​of length or angle, are not bound by their strict meanings but are interpreted to include a range that allows for the expectation of similar functions.

[0062] In the present specification, when a plurality of upper limit candidates and a plurality of lower limit candidates are exemplified with respect to a certain parameter, the numerical range of the parameter may be constructed by combining any one upper limit candidate and any one lower limit candidate. For example, consider the case where it is stated, "Parameter B may be, for example, A1 or greater, A2 or greater, or A3 or greater. Parameter B may be, for example, A4 or less, A5 or less, or A6 or less." In this case, the numerical range of parameter B may be A1 or greater and A4 or less, A1 or greater and A5 or less, A1 or greater and A6 or less, A2 or greater and A4 or less, A2 or greater and A5 or less, A2 or greater and A6 or less, A3 or greater and A4 or less, A3 or greater and A5 or less, or A3 or greater and A6 or less.

[0063] In the drawings referenced in this embodiment, identical or similar reference numerals are used for identical parts or parts having the same function, and their repeated description may be omitted. Additionally, for the convenience of explanation, the dimensional ratios in the drawings may differ from the actual ratios, or parts of the configuration may be omitted from the drawings.

[0064] An embodiment of the present disclosure will be described. FIG. 1 is a plan view illustrating an example of a through-electrode substrate (10). FIG. 2 is a plan view illustrating a part of the through-electrode substrate (10) of FIG. 1. FIG. 3 is a cross-sectional view taken along line III-III of the through-electrode substrate (10) of FIG. 2.

[0065] A through-electrode substrate (10) comprises a substrate (12) and a plurality of through-electrodes (20). The substrate (12) includes a first surface (13) and a second surface (14) located opposite the first surface (13) in the thickness direction of the substrate (12). The thickness direction is also referred to as the third direction D3. The substrate (12) further includes a plurality of through holes (15) penetrating from the first surface (13) to the second surface (14). Each of the plurality of through-electrodes (20) extends from the first surface (13) to the second surface (14) through the through holes (15).

[0066] As shown in FIG. 1, a plurality of through electrodes (20) may be arranged side by side in the plane direction of the first surface (13). For example, a plurality of through electrodes (20) may be arranged side by side in a first direction D1. The first direction D1 is one of the plane directions of the first surface (13). For example, a plurality of through electrodes (20) may be arranged side by side in a second direction D2 that is different from the first direction D1. The second direction D2 is also one of the plane directions of the first surface (13). The second direction D2 may be orthogonal to the first direction D1.

[0067] A plurality of penetrating electrodes (20) may be arranged side by side at a first pitch P1 in the plane direction of the first surface (13). For example, a plurality of penetrating electrodes (20) may be arranged side by side at a first pitch P1 in the first direction D1 and the second direction D2. The first pitch P1 is the distance between the center points C1 of two adjacent penetrating electrodes (20) when viewed in a plane. "Viewed in a plane" means viewing the object along the normal direction of the first surface (13).

[0068] The first pitch P1 is, for example, 200 μm or more, may be 400 μm or more, or 600 μm or more. The first pitch P1 is, for example, 3000 μm or less, may be 2000 μm or less, or 1000 μm or less.

[0069] The first pitch P1 may be different depending on the position in the first direction D1 or the position in the second direction D2. When multiple values ​​of the first pitch P1 are measured, it is determined whether the first pitch P1 satisfies the numerical range described in this specification based on the minimum value among the multiple first pitches P1.

[0070] The substrate (12) and the through electrode (20) are described in detail.

[0071] (Circuit board)

[0072] The substrate (12) includes an inorganic material having insulating properties. For example, the substrate (12) may be a glass substrate, a quartz substrate, a sapphire substrate, a resin substrate, a silicon substrate, a silicon carbide substrate, an alumina (Al2O3) substrate, an aluminum nitride (AlN) substrate, a zirconia oxide (ZrO2) substrate, etc., or a laminate of these substrates. The substrate (12) may partially include a substrate composed of a conductive material, such as an aluminum substrate or a stainless steel substrate.

[0073] Examples of glass used in the substrate (12) include alkali-free glass. Alkali-free glass is glass that does not contain alkali components such as sodium or potassium. Alkali-free glass contains, for example, boric acid instead of alkali components. In addition, alkali-free glass contains, for example, alkaline earth metal oxides such as calcium oxide or barium oxide.

[0074] The thickness T0 of the substrate (12) is, for example, 100 μm or more, may be 200 μm or more, or 300 μm or more. The thickness T0 of the substrate (12) is, for example, 800 μm or less, may be 600 μm or less, or 400 μm or less.

[0075] As illustrated in FIGS. 2 and 3, the through hole (15) includes a wall surface (16) extending from a first surface (13) to a second surface (14). The wall surface (16) includes a first section (161) and a second section (162). The first section (161) is a portion of the wall surface (16) connected to the first surface (13). The second section (162) is a portion of the wall surface (16) connected to the second surface (14). The first section (161) and the second section (162) may have a circular outline when viewed in a planar view.

[0076] (Penetrating electrode)

[0077] FIG. 4 is a cross-sectional view illustrating an example of a through electrode (20). As shown in FIGS. 2 to 4, a plurality of through electrodes (20) each include one first part (21), one second part (22), and a plurality of internal parts (26). The internal part (26) is a conductive material located inside the through hole (15) among the conductive materials constituting the through electrode (20). Each of the plurality of internal parts (26) is located inside the corresponding through hole (15). In other words, one internal part (26) is located inside the corresponding through hole (15). Accordingly, a plurality of through electrodes (20) each include one first part (21), one second part (22), and a plurality of internal parts (26) located inside the plurality of through holes (15). In this embodiment, a plurality of through electrodes (20) each include one first part (21), one second part (22), and four inner parts (26) located inside four through holes (15).

[0078] A structure in which one through electrode (20) includes a plurality of internal parts (26) located inside a plurality of through holes (15) is also referred to as a multi-via structure.

[0079] The number of through holes (15) overlapping one first part (21) when viewed in a planar view is, for example, 2 or more, and may be 4 or more. The number of through holes (15) overlapping one first part (21) when viewed in a planar view is, for example, 16 or less, may be 12 or less, may be 9 or less, may be 8 or less, and may be 6 or less.

[0080] A plurality of internal portions (26) of each penetrating electrode (20) are connected to one first portion (21) on the first surface (13) and to one second portion (22) on the second surface (14). The first portion (21) is located on the first surface (13). The second portion (22) is located on the second surface (14).

[0081] The first part (21) has a contour (211). The contour (211) is the outer edge of the first part (21) when viewed in a plane. As shown in FIG. 2, the contour (211) of the first part (21) of the plurality of through electrodes (20) may each surround the first end (161) of the wall surface (16) of the plurality of through holes (15) when viewed in a plane. Over the entire contour (211), the distance from the center point C1 when viewed in a plane to the contour (211) may be greater than the distance from the center point C1 when viewed in a plane to the first end (161).

[0082] A plurality of through holes (15) in which a plurality of internal parts (26) included in a single through electrode (20) are located may be arranged side by side at a second pitch P2 in the plane direction of the first surface (13). For example, a plurality of through holes (15) may be arranged side by side at a second pitch P2 in the first direction D1 and the second direction D2. The second pitch P2 is the distance between the center points C2 of two adjacent through holes (15) when viewed in a plane. In this embodiment, a plurality of through holes (15) in which a plurality of internal parts (26) included in a single through electrode (20) are located are surrounded by the contour of a single first part (21) when viewed in a plane.

[0083] The second pitch P2 is, for example, 80 μm or more, may be 100 μm or more, 125 μm or more, 150 μm or more, 175 μm or more, 200 μm or more, 300 μm or more, or 350 μm or more. The second pitch P2 is, for example, 1000 μm or less, may be 700 μm or less, or 500 μm or less. As the second pitch P2 is smaller, the distribution density of the through holes (15) increases, so the allowable current of the through electrode (20) increases. As the second pitch P2 is larger, the stress generated in the internal part (26) becomes easier to relieve, so the reliability of the through electrode substrate (10) increases.

[0084] The second pitch P2 is smaller than the first pitch P1. The ratio of the first pitch P1 to the second pitch P2, P1 / P2, is, for example, 2.0 or greater, may be 2.5 or greater, or 3.0 or greater. P1 / P2 is, for example, 5.0 or less, may be 4.5 or less, or 4.0 or less.

[0085] In FIG. 2, the symbol P3 indicates the shortest distance between the through holes (15) of two adjacent through electrodes (20). The two adjacent through electrodes (20) are also referred to as the first through electrode (20A) and the second through electrode (20B). The shortest distance P3 is measured between the center point C2 of the through hole (15) of the first through electrode (20A) and the center point C2 of the through hole (15) of the second through electrode (20B).

[0086] The smaller the difference between the second pitch P2 and the shortest distance P3, the more uniform the distribution density of the through holes (15) in the substrate (12). The higher the uniformity of the distribution density of the through holes (15), the more the stress generated in the substrate (12) is suppressed from fluctuating depending on the location. P3 / P2, which is the ratio of the shortest distance P3 to the second pitch P2, is, for example, 0.90 or higher, may be 0.95 or higher, or 1.00 or higher. P3 / P2 is, for example, 2.00 or lower, may be 1.50 or lower, or 1.20 or lower.

[0087] The second part (22) has a contour (221). The contour (221) is the outer edge of the second part (22) as viewed in a plane. Although not illustrated, the contour (221) of the second part (22) of the plurality of penetrating electrodes (20) may each surround the second section (162) of the wall surface (16) of the plurality of penetrating holes (15) as viewed in a plane. Over the entire contour (221), the distance from the center point C1 as viewed in a plane to the contour (221) may be greater than the distance from the center point C1 as viewed in a plane to the second section (162).

[0088] The through electrode substrate (10) may have a plurality of internal resins (30). The internal resin (30) is a resin material located inside the through hole (15). As shown in FIG. 3, the internal resin (30) may be placed in the part of the internal space of the through hole (15) where the internal part (26) is not placed.

[0089] As shown in FIGS. 2 to 4, the first portion (21) of the plurality of through electrodes (20) may each include a plurality of openings (212) that overlap with the through hole (15) when viewed in a planar view. One opening (212) may overlap with one through hole (15). An internal resin (30) may be located in each of the plurality of openings (212). By forming a plurality of openings (212) in the first portion (21), the stress generated in the through electrode (20) is easily relieved.

[0090] Each of the second portions (22) of the plurality of through electrodes (20) may also include a plurality of openings (222) that overlap with the through hole (15) when viewed in a planar view. One opening (222) may overlap with one through hole (15). An internal resin (30) may be located in each of the plurality of openings (222).

[0091] The configuration of the through hole (15) and the through electrode (20) is described in detail. FIG. 5 is a cross-sectional view illustrating an example of a through hole (15) of a substrate (12).

[0092] The through hole (15) has a first dimension R1 at the first section (161) in the direction of the first surface (13). The through hole (15) has a second dimension R2 at the second section (162) in the direction of the first surface (13). The through hole (15) may include a minimum section (163) located between the first section (161) and the second section (162). The through hole (15) has a minimum dimension R3 at the minimum section (163) in the direction of the first surface (13). The minimum section (163) is defined as a part of the wall surface (16) where the dimension of the through hole (15) in the direction of the first surface (13) is the minimum value.

[0093] The first section (161), the second section (162), and the minimum section (163) may have a circular outline when viewed in planar form. In this case, the first dimension R1, the second dimension R2, and the minimum dimension R3 represent the diameters of the first section (161), the second section (162), and the minimum section (163).

[0094] The first section (161), the second section (162), and the minimum section (163) may have a shape other than a circle when viewed in planar form. If a shape other than a circle is adopted, the first dimension R1, the second dimension R2, and the minimum dimension R3 may have a diameter equivalent to a circle. For example, the first dimension R1 may be the diameter of a circle having an area equal to the area enclosed by the shape of the first section (161). For example, the second dimension R2 may be the diameter of a circle having an area equal to the area enclosed by the shape of the second section (162). For example, the minimum dimension R3 may be the diameter of a circle having an area equal to the cross-sectional area of ​​the through hole (15) in the minimum section (163).

[0095] The minimum dimension R3 is smaller than the first dimension R1. The dimensions of the through hole (15) may decrease monotonically from the first stage (161) to the minimum portion (163). The minimum dimension R3 is smaller than the second dimension R2. The dimensions of the through hole (15) may decrease monotonically from the second stage (162) to the minimum portion (163).

[0096] The minimum dimension R3 is, for example, 40 μm or more, and may be 50 μm or more, or 60 μm or more. The larger the minimum dimension R3, the higher the allowable current of the inner part (26) of the penetrating electrode (20). The minimum dimension R3 is, for example, 90 μm or less, and may be 80 μm or less, or 70 μm or less. The smaller the minimum dimension R3, the easier it is for the closed part (25), which will be described later, to be formed in the minimum part (163).

[0097] The first dimension R1 is, for example, 50 μm or more, and may be 60 μm or more, or 70 μm or more. The first dimension R1 is, for example, 100 μm or less, and may be 90 μm or less, or 80 μm or less.

[0098] R1 / R3, which is the ratio of the first dimension R1 to the minimum dimension R3, is, for example, 2.0 or greater, may be 2.2 or greater, or 2.5 or greater. Since the ratio R1 / R3 is 2.0 or greater, the allowable current of the inner part (26) of the penetrating electrode (20) is sufficiently high. The ratio R1 / R3 is, for example, 3.0 or less, and may be 2.8 or less.

[0099] R2 / R3, which is the ratio of the second dimension R2 to the minimum dimension R3, is, for example, 2.0 or greater, may be 2.2 or greater, or 2.5 or greater. Since the ratio R2 / R3 is 2.0 or greater, the allowable current of the inner part (26) of the penetrating electrode (20) is sufficiently high. The ratio R2 / R3 is, for example, 3.0 or less, and may be 2.8 or less. The ratio R2 / R3 may be the same as the ratio R1 / R3, or may be different.

[0100] It is desirable that the difference between the first dimension R1 and the second dimension R2 be small. The ratio R2 / R1 of the second dimension R2 to the first dimension R1 is, for example, 0.8 or higher, and may be 0.9 or higher. The ratio R2 / R1 is, for example, 1.2 or lower, and may be 1.1 or lower. By making the difference between the first dimension R1 and the second dimension R2 small, the allowable current of the through electrode (20) can be efficiently increased while suppressing defects such as voids.

[0101] It is preferable that the first dimension R1 is sufficiently small for the second pitch P2 of the through hole (15). The ratio of the second pitch P2 to the first dimension R1, P2 / R1, is, for example, 1.5 or greater, may be 1.6 or greater, may be 1.8 or greater, and may be 2.0 or greater. P2 / R1 is, for example, 3.0 or less, may be 2.5 or less, and may be 2.3 or less.

[0102] As described in the example, the dimensions of the through hole (15) may be determined to satisfy the condition that "when a direct current of 1A flows through the through electrode (20), the temperature rise in the through electrode (20) is 10°C or less." A test to measure the temperature by flowing current through the through electrode (20) is performed based on JIS C 5012:1993. Current is flowed through the through electrode (20) until the temperature stabilizes. In the following description, the above condition is also referred to as the condition of withstand current. A through electrode (20) that satisfies the condition of withstand current is also referred to as a "through electrode (20) having withstand current."

[0103] A penetrating electrode (20) that satisfies the conditions of withstand current includes, preferably, four or more internal parts (26), has a first dimension R1 and a second dimension R2 of 70 μm or more, and has a minimum dimension R3 of 35 μm or more.

[0104] As illustrated in FIG. 5, the minimum portion (163) may be located midway between the first surface (13) and the second surface (14) in the thickness direction of the substrate (12). In FIG. 5, the symbol K3 indicates the distance from the first surface (13) to the minimum portion (163) in the thickness direction of the substrate (12). When the minimum portion (163) is located midway between the first surface (13) and the second surface (14), K3 / T0, which is the ratio of the distance K3 to the thickness T0 of the substrate, is 0.50.

[0105] Although not a city, the position of the minimum portion (163) in the thickness direction of the substrate (12) may be offset from the midpoint between the first surface (13) and the second surface (14). That is, the ratio K3 / T0 may be offset from 0.50. The ratio K3 / T0 may be, for example, 0.40 or higher, and may be 0.45 or higher. The ratio K3 / T0 may be, for example, 0.60 or lower, and may be 0.55 or lower.

[0106] FIG. 6 is a cross-sectional view illustrating an example of a penetrating electrode (20). The inner portion (26) of the penetrating electrode (20) is partially located in the penetrating hole (15). "Partially" means that the entire space of the penetrating hole (15) is not occupied by the inner portion (26). The inner portion (26) extends along the wall (16) of the penetrating hole (15) from the first surface (13) to the second surface (14).

[0107] The through electrode (20) includes a conductive material. The through electrode (20) includes at least a plating layer (201). The plating layer (201) is a conductive layer formed by a plating method such as electrolytic plating. The through electrode (20) may include a seed layer (202). The seed layer (202) is located between the surface of the substrate (12), such as the first surface (13), the second surface (14), and the wall surface (16), and the plating layer (201). The seed layer (202) is a conductive layer formed by a physical film formation method such as sputtering.

[0108] Most of the through electrode (20) is composed of a plating layer (201). The ratio of the thickness of the plating layer (201) to the thickness of the through electrode (20) located on the wall (16) is, for example, 0.80 or more, and may be 0.90 or more.

[0109] The plating layer (201) may include metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, titanium, chromium, and zinc, or alloys using these. The seed layer (202) may include metal materials such as copper, nickel, titanium, chromium, and zinc. The seed layer (202) may include compounds of these metal materials.

[0110] The inner portion (26) of the penetrating electrode (20) may include a third portion (23), a fourth portion (24), and a closed portion (25). The closed portion (25) is located on the minimum portion (163) of the wall surface (16) of the penetrating hole (15). The closed portion (25) closes the penetrating hole (15) at the minimum portion (163). The third portion (23) is located on the wall surface (16) between the first portion (21) and the closed portion (25). The third portion (23) is connected to the first portion (21) and the closed portion (25). The fourth portion (24) is located on the wall surface (16) between the second portion (22) and the closed portion (25). The fourth portion (24) is connected to the second portion (22) and the closed portion (25).

[0111] The closed portion (25) includes a first closed surface (251) and a second closed surface (252). The first closed surface (251) is a surface of the closed portion (25) facing the first surface (13). The second closed surface (252) is a surface of the closed portion (25) facing the second surface (14).

[0112] The third part (23) and the fourth part (24) extend along the wall (16) of the through hole (15) to surround the center of the through hole (15) when viewed in a plane.

[0113] The first part (21), second part (22), third part (23), fourth part (24) and closed part (25) of the penetrating electrode (20) may all include the plating layer (201) and seed layer (202) described above.

[0114] (Internal resin)

[0115] The internal resin (30) is partially located in the through hole (15). The internal resin (30) comprises a resin material filled in the space of the through hole (15) where the through electrode (20) is not present. The internal resin (30) comprises a first internal resin (31) located inside the third part (23) of the through electrode (20) and a second internal resin (32) located inside the fourth part (24) of the through electrode (20). "Inner side" means an orientation that is closer to the center point C2 of the through hole (15) when viewed in a plane. "Outer side" described later means an orientation that is further away from the center point C2 of the through hole (15) when viewed in a plane.

[0116] The internal resin (30) includes a resin material having insulating properties. The resin material is an organic material such as polyimide, epoxy, acrylic, polyphenyl ether, etc.

[0117] The dimensions of the components of the penetrating electrode (20) are described with reference to FIG. 7. FIG. 7 is a cross-sectional view illustrating an example of the dimensions of the penetrating electrode (20). In FIG. 7, the internal resin (30) is omitted.

[0118] In FIG. 7, the symbol K1 represents the maximum value of the distance from the first surface (13) in the thickness direction of the substrate (12) to the first closed surface (251) of the closed portion (25). The distance K1 is also referred to as the first distance. The symbol K2 represents the maximum value of the distance from the second surface (14) in the thickness direction of the substrate (12) to the second closed surface (252) of the closed portion (25). The distance K2 is also referred to as the second distance. The symbol T5 represents the thickness of the closed portion (25). The thickness T5 is calculated by subtracting the first distance K1 and the second distance K2 from the thickness T0 of the substrate (12). That is, T5 = T0 - (K1 + K2).

[0119] The greater the thickness T5 of the closed portion (25), the higher the allowable current of the through electrode (20). However, the greater the thickness T5 of the closed portion (25), the more likely defects such as voids are to occur in the plating layer (201). Considering this, it is desirable that the first distance K1 and the second distance K2 are somewhat large.

[0120] The ratio K1 / T0 of the first distance K1 to the thickness T0 of the substrate (12) is, for example, 0.10 or greater, may be 0.15 or greater, or 0.20 or greater. The ratio K1 / T0 is, for example, 0.40 or less, may be 0.35 or less, or 0.30 or less.

[0121] The ratio K2 / T0 of the second distance K2 to the thickness T0 of the substrate (12) is, for example, 0.10 or greater, may be 0.15 or greater, or 0.20 or greater. The ratio K2 / T0 is, for example, 0.40 or less, may be 0.35 or less, or 0.30 or less. The ratio K2 / T0 may be the same as the ratio K1 / T0 or different.

[0122] The ratio T5 / T0 of the thickness T5 of the closed portion (25) to the thickness T0 of the substrate (12) is, for example, 0.20 or greater, and may be 0.25 or greater. The ratio T5 / T0 is, for example, 0.40 or less, and may be 0.35 or less.

[0123] In FIG. 7, the symbol θ1 represents the angle between the first surface (13) and the wall surface (16) in the first stage (161). The angle θ1 may be greater than 90°. Since the through hole (15) includes the minimum portion (163), the angle θ1 may be greater than 90°. The angle θ1 may be, for example, 95° or greater, 100° or greater, or 105° or greater. The angle θ1 may be, for example, 150° or less, 135° or less, or 120° or less.

[0124] In FIG. 7, the symbol θ2 represents the angle between the second surface (14) and the wall surface (16) in the second stage (162). Like angle θ1, angle θ2 may be greater than 90°. As for the numerical range of angle θ2, the numerical range for angle θ1 described above may be adopted.

[0125] When the thermal expansion coefficient of the through electrode (20) and the thermal expansion coefficient of the substrate (12) are different, if the temperature of the through electrode (20) changes, expansion or contraction of the through electrode (20) relative to the substrate (12) occurs. Expansion or contraction causes stress between the substrate (12) and the through electrode (20). Stress caused by a change in temperature is also referred to as thermal stress. If expansion or contraction occurs in the inner part (26) of the through electrode (20), it is thought that large thermal stress occurs in the first stage (161) and the second stage (162) of the through hole (15).

[0126] In this embodiment, since the through hole (15) includes a minimum portion (163), angles θ1 and θ2 can be greater than 90°. Angles θ1 and θ2 being greater than 90° can reduce thermal stress in the first stage (161) and the second stage (162).

[0127] In FIG. 7, the symbol T3 indicates the thickness of the third portion (23) of the through electrode (20). The thickness T3 of the third portion (23) is determined at a distance S3 from the first surface (13) in the thickness direction of the substrate (12). The distance S3 is 50 μm. The symbol T4 indicates the thickness of the fourth portion (24) of the through electrode (20). The thickness T4 of the fourth portion (24) is determined at a distance S4 from the second surface (14) in the thickness direction of the substrate (12). The distance S4 is 50 μm. Both thickness T3 and thickness T4 are dimensions of the through electrode (20) in the plane direction of the first surface (13).

[0128] As thicknesses T3 and T4 increase, the allowable current of the penetrating electrode (20) increases. However, as thicknesses T3 and T4 increase, the thickness uniformity of the third part (23) and the fourth part (24) decreases.

[0129] Thicknesses T3 and T4 may be, for example, 20 μm or more, 25 μm or more, or 30 μm or more. Thicknesses T3 and T4 may be, for example, 50 μm or less, 40 μm or less, or 35 μm or less.

[0130] By appropriately setting the upper limits of thickness T3 and thickness T4, the thickness uniformity of the third part (23) and the fourth part (24) can be ensured.

[0131] The thickness uniformity of the third part (23) is evaluated by measuring the thickness of the third part (23) at multiple locations in the thickness direction of the substrate (12). For example, if the difference between the maximum and minimum values ​​of the thickness T3, thickness T31, and thickness T32 of the third part (23) is 0.10 μm or less, it is determined that the thickness variation of the third part (23) is 0.10 μm or less. Thickness T3 is the thickness of the third part (23) measured at a location S3 distance from the first surface (13) in the thickness direction of the substrate (12). Thickness T31 is the thickness of the third part (23) measured at a location (S3+20 μm) distance from the first surface (13) in the thickness direction of the substrate (12). Thickness T32 is the thickness of the third part (23) measured at a location (S3-20 μm) distance from the first surface (13) in the thickness direction of the substrate (12).

[0132] Similar to the case of the third part (23), the thickness uniformity of the fourth part (24) is evaluated by measuring the thickness of the fourth part (24) at multiple locations in the thickness direction of the substrate (12). For example, if the difference between the maximum and minimum values ​​of the thickness T4, thickness T41, and thickness T42 of the fourth part (24) is 0.10 μm or less, it is determined that the thickness variation of the fourth part (24) is 0.10 μm or less. Thickness T4 is the thickness of the fourth part (24) measured at a location S4 distance from the second surface (14) in the thickness direction of the substrate (12). Thickness T41 is the thickness of the fourth part (24) measured at a location (S4+20 μm) distance from the second surface (14) in the thickness direction of the substrate (12). Thickness T42 is the thickness of the fourth portion (24), which is measured at a position (S4-20㎛) away from the second surface (14) in the thickness direction of the substrate (12).

[0133] R3 / T3, which is the ratio of the minimum dimension R3 to the thickness T3 of the third part (23), is, for example, 1.2 or greater, and may be 1.5 or greater, or 1.8 or greater. Since the ratio R3 / T3 is 1.2 or greater, the reliability of the through electrode (20) can be increased. The ratio R3 / T3 is, for example, 3.0 or less, may be 2.4 or less, or 2.2 or less. Since the ratio R3 / T3 is 3.0 or less, the allowable current of the through electrode (20) is sufficiently increased.

[0134] R3 / T4, which is the ratio of the minimum dimension R3 to the thickness T4 of the fourth part (24), is, for example, 1.2 or greater, and may be 1.5 or greater, and may be 1.8 or greater, just like the ratio R3 / T3. R3 / T4 is, for example, 3.0 or less, may be 2.4 or less, and may be 2.2 or less, just like the ratio R3 / T3.

[0135] The first part (21) located on the first surface (13) has a thickness T1. The thickness T1 of the first part (21) may be the same as the thickness T3 of the third part (23). The thickness T1 of the first part (21) may be greater than or smaller than the thickness T3 of the third part (23).

[0136] The second part (22) located on the second surface (14) has a thickness T2. The thickness T2 of the second part (22) may be the same as the thickness T4 of the fourth part (24). The thickness T2 of the second part (22) may be greater than or smaller than the thickness T4 of the fourth part (24).

[0137] The above-described distance and dimensions of the substrate (12) and the penetrating electrode (20) are calculated based on a planar or cross-sectional image of the penetrating electrode substrate (10) obtained by an electron microscope.

[0138] (Method for manufacturing a through-electrode substrate)

[0139] An example of a method for manufacturing a through electrode substrate (10) is described.

[0140] (Through hole formation process)

[0141] A substrate (12) is prepared. Next, a resist layer is provided on at least one of the first surface (13) or the second surface (14). Then, an opening is provided in the resist layer at a position corresponding to a through hole (15). Next, the substrate (12) is processed at the opening in the resist layer. As a result, as shown in FIG. 8, a through hole (15) is formed in the substrate (12). The through hole (15) includes a wall surface (16) extending from the first surface (13) to the second surface (14). As a method for processing the substrate (12), a dry etching method, a wet etching method, etc., can be used. A dry etching method is a reactive ion etching method, a deep reactive ion etching method, etc.

[0142] A through hole (15) may be formed in the substrate (12) by irradiating the substrate (12) with a laser. In this case, a resist layer does not need to be provided. As the laser, an excimer laser, an Nd:YAG laser, a femtosecond laser, etc. may be used. When using an Nd:YAG laser, a fundamental wave with a wavelength of 1064 nm, a second harmonic with a wavelength of 532 nm, a third harmonic with a wavelength of 355 nm, etc. may be used.

[0143] The process of forming a through hole (15) in a substrate (12) may include a process of irradiating a laser onto a first surface (13) and a second surface (14) of the substrate (12), and a wet etching process. In this case, the laser is used not for processing the substrate (12), but to partially form a modified layer on the first surface (13) and the second surface (14) of the substrate (12). In the wet etching process, the modified layer is etched preferentially over other parts. By wet etching, a concave portion is formed in the modified layer of the first surface (13), and a concave portion is formed in the modified layer of the second surface (14). By connecting the concave portion of the first surface (13) and the concave portion of the second surface (14), a through hole (15) having a wall surface extending from the first surface (13) to the second surface (14) is formed.

[0144] (Through electrode formation process)

[0145] Next, a through electrode forming process is performed to form a through electrode (20) in the through hole (15). The through electrode forming process includes a seed layer forming process and a plating layer forming process.

[0146] In the seed layer formation process, as shown in FIG. 9, a seed layer (202) is formed on the first surface (13), the second surface (14), and the wall surface (16) of the substrate (12). For example, the seed layer (202) is formed by sputtering.

[0147] The plating layer formation process includes a resist layer formation process, a plating process, and a resist layer removal process. FIG. 10 is a cross-sectional view illustrating an example of a resist layer formation process. In the resist layer formation process, a first resist layer (81) is partially formed on a seed layer (202) located on a first surface (13), and a second resist layer (82) is partially formed on a seed layer (202) located on a second surface (14). The first resist layer (81) and the second resist layer (82) are provided to cover the area of ​​the seed layer (202) where the plating layer (201) is not formed.

[0148] FIG. 11 is a cross-sectional view illustrating an example of a plating process. In the plating process, a plating layer (201) is formed on a seed layer (202) by electrolytic plating. For example, a substrate (12) having a seed layer (202) and a resist layer (81, 82) formed thereon may be immersed in an electrolytic plating solution. By passing an electric current through the seed layer (202), a plating layer (201) is deposited on the seed layer (202).

[0149] The through hole (15) of the substrate (12) includes a minimum portion (163). As the growth of the plating layer (201) progresses, the plating layer (201) formed along the periphery direction of the through hole (15) in the minimum portion (163) is connected to one another. That is, as shown in FIG. 11, the through hole (15) in the minimum portion (163) is closed by the plating layer (201). That is, a closed portion (25) is formed. In the subsequent plating process, the electrolytic plating solution circulates in the first space SP1 and the second space SP2. The first space SP1 is a space located between the minimum portion (163) and the first surface (13) in the thickness direction of the substrate (12). The second space SP2 is a space located between the minimum portion (163) and the second surface (14) in the thickness direction of the substrate (12).

[0150] The plating process before the through hole (15) in the minimum portion (163) is closed by the plating layer (201) is also referred to as the first plating process. The plating process after the through hole (15) in the minimum portion (163) is closed by the plating layer (201) is also referred to as the second plating process.

[0151] In the second plating process, the growth of the plating layer (201) proceeds in the first space SP1 and the second space SP2. For example, as shown in FIG. 12, the closed portion (25) grows in the thickness direction of the substrate (12). The time of the second plating process is adjusted so that the numerical range regarding the first distance K1, the second distance K2, the thickness T5 of the closed portion (25) described above is realized. For example, the second plating process is performed such that the ratio of the thickness T5 of the closed portion (25) to the thickness T0 of the substrate (12) is 0.20 or more and 0.40 or less.

[0152] Next, as shown in FIG. 13, a resist layer removal process is performed to remove the first resist layer (81) and the second resist layer (82). Next, a seed layer removal process is performed to remove a portion of the seed layer (202). In the seed layer removal process, as shown in FIG. 13, the seed layer (202) that overlaps the first resist layer (81) and the second resist layer (82) when viewed in a planar view is removed. In this way, a through electrode (20) is obtained.

[0153] (Resin layer formation process)

[0154] Next, a resin layer forming process is carried out to form an internal resin (30). For example, a layer containing a resin material is formed on the first surface (13) and the second surface (14). For example, a resin film having a layer containing a resin material is attached to the first surface (13) and the second surface (14). Next, the layer containing a resin material located on the first surface (13) is pressed into the inner space of the third part (23). Also, the layer containing a resin material located on the second surface (14) is pressed into the inner space of the fourth part (24). Next, the resin material is cured. For example, ultraviolet rays are irradiated onto the layer containing the resin material. As a result, as shown in FIG. 14, a first internal resin (31) and a second internal resin (32) are formed. In this way, a through electrode substrate (10) having a substrate (12), a through electrode (20), and an internal resin (30) is obtained.

[0155] Each of the plurality of through electrodes (20) of the through electrode substrate (10) of the present embodiment includes a plurality of internal portions (26) located inside the plurality of through holes (15). That is, in the present embodiment, a multi-via structure is adopted. The through electrode (20) of the present embodiment can increase the allowable current of the through electrode (20) while suppressing defects such as voids compared to conventional through electrodes.

[0156] A conventional through electrode includes only one internal portion (26) located inside one through hole (15). A structure in which one through electrode (20) includes only one internal portion (26) located inside one through hole (15) is also referred to as a single via structure. Two means can be conceived as means to increase the allowable current of the through electrode (20) of the single via structure. The first means is to increase the first dimension R1 and the second dimension R2 of the through hole (15). The second means is to increase the thickness of the plating layer (201).

[0157] In the first means, in order to satisfy the above-described conditions for withstand current, it is preferable that, for example, the first dimension R1 and the second dimension R2 are 180 μm or more, and the minimum dimension R3 is 60 μm or more. If the first dimension R1 and the second dimension R2 increase, the space of the through hole (15) where the plating layer does not exist increases. As a result, there is a concern that defects such as voids may occur in the resin material. In the second means, if the thickness of the plating layer increases, defects such as voids are more likely to occur in the plating layer. In addition, variations in the thickness of the plating layer depending on the location are also more likely to occur.

[0158] In this embodiment, a multi-via structure is adopted. In the multi-via structure, the allowable current of the through electrode (20) can be increased by increasing the number of through holes (15) that overlap one first part (21) when viewed in a planar view. Therefore, according to this embodiment, even if the dimensions of the through holes (15) are small and the thickness of the plating layer (201) is small, a sufficient allowable current of the through electrode (20) can be realized. For example, even if the first dimension R1 and the second dimension R2 are less than 180 μm and the minimum dimension R3 is less than 60 μm, the above-described conditions for withstand current can be satisfied. Therefore, the through electrode (20) of this embodiment can increase the allowable current of the through electrode (20) while suppressing defects such as voids compared to conventional through electrodes.

[0159] Preferably, the penetrating electrode (20) comprises a first part (21), a second part (22), a third part (23), a fourth part (24), and a closed part (25), and the internal resin (30) comprises a first internal resin (31) and a second internal resin (32). In other words, in the third direction D3, the internal resin (30) is divided into the first internal resin (31) and the second internal resin (32) by the closed part (25). With this configuration, the volume of the first internal resin (31) and the second internal resin (32) is limited, thereby suppressing defects such as voids from forming in the resin material.

[0160] The above-described embodiment can be modified in various ways. Variations are described with reference to the drawings as necessary. In the following description and the drawings used in the description, parts that can be configured in the same manner as the above-described embodiment are given the same reference numerals as those used for corresponding parts in the above-described embodiment. Redundant descriptions are omitted. Furthermore, if it is clear that the functional effects obtained in the above-described embodiment are also obtained in the variations, such descriptions may be omitted.

[0161] (1st variation)

[0162] FIG. 15 is a cross-sectional view illustrating a through electrode substrate (10) in a first modified example. The internal portion (26) of the through electrode (20) of the through electrode substrate (10) does not have to include a closed portion (25). For example, the internal portion (26) may be located on the wall surface (16) extending from the first stage (161) to the second stage (162). A through electrode (20) including such an internal portion (26) is also referred to as a conformal via. As a numerical range for the thickness of the internal portion (26), the numerical ranges for the thicknesses T3 and T4 described above may be adopted.

[0163] As shown in FIG. 15, the through electrode substrate (10) may have a plurality of internal resins (30) located inside the inner portion (26) within each of the plurality of through holes (15). Each of the plurality of internal resins (30) may be continuously extended within the through hole (15) from the first surface (13) to the second surface (14).

[0164] As shown in FIG. 15, the through hole (15) of the through electrode substrate (10) may include a minimum portion (163) located between the first portion (161) and the second portion (162). By including the minimum portion (163) in the through hole (15), the volume of the internal resin (30) can be reduced. By reducing the volume of the internal resin (30), defects such as voids can be suppressed from forming in the resin material. As for the numerical range of the dimensions of the through hole (15), the numerical ranges of the first dimension R1, the second dimension R2, and the minimum dimension R3 described above may be adopted.

[0165] In the first variant, each of the plurality of through electrodes (20) includes a plurality of internal portions (26) located inside the plurality of through holes (15). That is, in the first variant, a multi-via structure is adopted. In the first variant, the allowable current of the through electrodes (20) can be increased while suppressing defects such as voids.

[0166] (2nd variation)

[0167] FIG. 16 is a cross-sectional view illustrating a through electrode substrate (10) in a second modified example. The through hole (15) of the through electrode substrate (10) in FIG. 16 differs from the through hole (15) of the through electrode substrate (10) in FIG. 15 in that it does not include a minimum portion (163). For example, the through hole (15) of the through electrode substrate (10) in FIG. 16 may have a constant dimension regardless of its position in the third direction D3.

[0168] In order for a conformal via of a single via structure formed by a through hole (15) that does not include a minimum portion (163) to satisfy the above-described conditions for withstand current, for example, it is preferable that the first dimension R1 and the second dimension R2 are 104 μm or more, and the thickness of the inner portion (26) is 30 μm or more.

[0169] In the second variant, the plurality of through electrodes (20) each include a plurality of internal parts (26) located inside the plurality of through holes (15). That is, in the second variant, a multi-via structure is adopted. According to the second variant, even if the dimensions of the through holes (15) are small, the allowable current of the through electrodes (20) can be increased while suppressing defects such as voids. For example, even if the first dimension R1 and the second dimension R2 are less than 104 μm, the above-described conditions for withstand current can be satisfied.

[0170] (Third Variation Example)

[0171] FIG. 17 is a cross-sectional view illustrating a through-electrode substrate (10) in a third modified example. As shown in FIG. 17, the entire space of the through-hole (15) may be occupied by an internal portion (26). A through-electrode (20) including such an internal portion (26) is also referred to as a field via.

[0172] The symbol T6 indicates the thickness of the inner part (26). As shown in FIG. 17, when the entire space of the through hole (15) is occupied by the inner part (26), the thickness T6 of the inner part (26) is equivalent to the thickness T0 of the substrate (12).

[0173] As shown in FIG. 17, the through hole (15) of the through electrode substrate (10) may include a minimum portion (163) located between the first portion (161) and the second portion (162). By including the minimum portion (163) in the through hole (15), the volume of the internal portion (26) can be reduced. By reducing the volume of the internal portion (26), defects such as voids can be suppressed from forming in the conductive material. As for the numerical range of the dimensions of the through hole (15), the numerical ranges of the first dimension R1, the second dimension R2, and the minimum dimension R3 described above may be adopted.

[0174] In the third variant, each of the plurality of through electrodes (20) includes a plurality of internal parts (26) located inside the plurality of through holes (15). That is, in the first variant, a multi-via structure is also adopted. In the third variant, the allowable current of the through electrodes (20) can be increased while suppressing defects such as voids.

[0175] (Fourth variant)

[0176] FIG. 18 is a cross-sectional view illustrating a through electrode substrate (10) in a fourth modified example. The through hole (15) of the through electrode substrate (10) in FIG. 18 differs from the through hole (15) of the through electrode substrate (10) in FIG. 17 in that it does not include a minimum portion (163). For example, the through hole (15) of the through electrode substrate (10) in FIG. 18 may have a constant dimension regardless of its position in the third direction D3.

[0177] In order for a field via of a single via structure formed by a through hole (15) that does not include a minimum portion (163) to satisfy the above-described conditions for withstand current, for example, it is preferable that the first dimension R1 and the second dimension R2 are 94 μm or more.

[0178] In the fourth variant, the plurality of through electrodes (20) each include a plurality of internal parts (26) located inside the plurality of through holes (15). That is, in the fourth variant, a multi-via structure is adopted. According to the fourth variant, even if the dimensions of the through holes (15) are small, the allowable current of the through electrodes (20) can be increased while suppressing defects such as voids. For example, even if the first dimension R1 and the second dimension R2 are less than 94 μm, the above-described conditions for withstand current can be satisfied.

[0179] (5th Variation Example)

[0180] FIG. 19 is a plan view illustrating a through-electrode substrate (10) in a fifth modified example. FIG. 20 is a cross-sectional view along line XX-XX of the through-electrode substrate (10) of FIG. 19. FIG. 21 is a cross-sectional view along line XXI-XXI of the through-electrode substrate (10) of FIG. 19.

[0181] The through-electrode substrate (10) may have a first wiring layer (50A) and a second wiring layer (50B). The first wiring layer (50A) is located on the first surface (13) of the substrate (12). The second wiring layer (50B) is located on the second surface (14) of the substrate (12). The first wiring layer (50A) includes at least one insulating layer and at least one conductive layer. The second wiring layer (50B) includes at least one insulating layer and at least one conductive layer.

[0182] The first wiring layer (50A) of the through electrode substrate (10) may have a plurality of first conductive layers (35) and a first resin layer (33). Each of the plurality of first conductive layers (35) is connected to a first portion (21) of a corresponding through electrode (20). In other words, a corresponding first conductive layer (35) is connected to each of the first portions (21) of the plurality of through electrodes (20). The first resin layer (33) is located between the plurality of first portions (21) and the plurality of first conductive layers (35) in the third direction D3.

[0183] The first conductive layer (35) includes a conductive material. The conductive material may include metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, titanium, chromium, zinc, or alloys using these.

[0184] As shown in FIG. 19, each of the first conductive layers (35) may have a contour (351) that surrounds the multiple through holes (15) when viewed in a planar view. The contour (351) of the first conductive layer (35) may extend along the contour (211) of the first part (21) when viewed in a planar view.

[0185] The first resin layer (33) includes a resin material having insulating properties. The resin material is an organic material such as polyimide, epoxy, acrylic, or polyphenyl ether.

[0186] As shown in FIGS. 19 and 21, the first resin layer (33) may include a plurality of openings (331). Each of the plurality of openings (331) of the first resin layer (33) overlaps with the first portion (21) when viewed in a planar view. A single opening (331) may be formed in the portion of the first resin layer (33) that overlaps with one of the first portions (21) when viewed in a planar view. A portion of the first conductive layer (35) may be located in the opening (331). For example, the first conductive layer (35) may be connected to the first portion (21) of the through electrode (20) in the opening (331) of the first resin layer (33).

[0187] The opening (331) of the first resin layer (33) has a fourth dimension R4 when viewed in a planar view. The opening (331) may have a circular outline when viewed in a planar view. In this case, the fourth dimension R4 refers to the diameter of the opening (331). The opening (331) may have a non-circular outline when viewed in a planar view. If a non-circular outline is adopted, the fourth dimension R4 may be a diameter equivalent to a circle. For example, the fourth dimension R4 may be the diameter of a circle having an area equal to the area of ​​the opening (331) when viewed in a planar view.

[0188] The fourth dimension R4 of the opening (331) may be larger than the first dimension R1 of the through hole (15). The ratio of the fourth dimension R4 to the first dimension R1, R4 / R1, may be, for example, 1.2 or greater, 1.5 or greater, or 2.0 or greater. The larger R4 / R1 is, the lower the contact resistance between the first part (21) of the through electrode (20) and the first conductive layer (35). R4 / R1 may be, for example, 5.0 or less, 4.0 or less, or 3.0 or less.

[0189] In FIG. 19, the symbol P4 represents the shortest distance between the center point C4 of the opening (331) viewed in a plane and the center point C2 of the through hole (15). The shortest distance P4 may be smaller than the second pitch P2. The ratio of the shortest distance P4 to the second pitch P2, P4 / P2, may be, for example, 0.9 or less, 0.8 or less, or 0.7 or less.

[0190] As shown in FIGS. 20 and 21, the first resin layer (33) may include a portion in contact with the first surface (13). The first resin layer (33) may also include a portion in contact with the first portion (21).

[0191] As shown in FIG. 21, the first resin layer (33) may be integral with the first inner resin (31) of the inner resin (30). For example, the first resin layer (33) and the first inner resin (31) may be formed from the same resin film during the resin layer formation process.

[0192] As shown in FIGS. 19 to 21, the second wiring layer (50B) of the through electrode substrate (10) may have a plurality of second conductive layers (36) and a second resin layer (34). Each of the plurality of second conductive layers (36) is connected to a second portion (22) of a corresponding through electrode (20). In other words, a corresponding second conductive layer (36) is connected to each of the second portions (22) of the plurality of through electrodes (20). The second resin layer (34) is located between the plurality of second portions (22) and the plurality of second conductive layers (36) in the third direction D3.

[0193] The second conductive layer (36) includes a conductive material. The conductive material may include metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, titanium, chromium, zinc, or alloys using these.

[0194] Each of the plurality of second conductive layers (36) may have a contour (361) including a plurality of through holes (15) when viewed in a planar view. The contour (361) of the second conductive layer (36) may extend along the contour (221) of the second part (22) when viewed in a planar view.

[0195] The second resin layer (34) includes a resin material having insulating properties. The resin material is an organic material such as polyimide, epoxy, acrylic, or polyphenyl ether.

[0196] The second resin layer (34) may include a plurality of openings (341). Each of the plurality of openings (341) of the second resin layer (34) overlaps with the second portion (22) when viewed in a planar view. A portion of the second conductive layer (36) may be located in the openings (341). For example, the second conductive layer (36) may be connected to the second portion (22) of the penetrating electrode (20) in the openings (341) of the second resin layer (34).

[0197] As shown in FIGS. 20 and 21, the second resin layer (34) may include a portion in contact with the second surface (14). The second resin layer (34) may also include a portion in contact with the second portion (22).

[0198] As shown in FIG. 21, the second resin layer (34) may be integral with the second inner resin (32) of the inner resin (30). For example, the second resin layer (34) and the second inner resin (32) may be formed from the same resin film during the resin layer formation process.

[0199] (6th Variation Example)

[0200] FIG. 22 is a cross-sectional view illustrating a through-electrode substrate (10) in a sixth modified example. The through-electrode substrate (10) of FIG. 22 differs from the through-electrode substrate (10) of FIG. 21 in that it has a plurality of first bumps (51). The through-electrode substrate (10) may also have a plurality of second bumps (52).

[0201] Each of the multiple first bumps (51) may be located on the conductive layer of the first wiring layer (50A). For example, each of the multiple first bumps (51) may be located on the first conductive layer (35) connected to the first part (21) of the through electrode (20). The first bumps (51) may include solder.

[0202] Each of the multiple second bumps (52) may be located on the conductive layer of the second wiring layer (50B). For example, each of the multiple second bumps (52) may be located on the second conductive layer (36) connected to the second part (22) of the through electrode (20). The second bumps (52) may include solder.

[0203] (7th Variation Example)

[0204] FIG. 23 is a cross-sectional view illustrating a through-electrode substrate (10) in a seventh modified example. The through-electrode substrate (10) of FIG. 23 differs from the through-electrode substrate (10) of FIG. 22 in that it is equipped with an element (60). The through-electrode substrate (10) on which the element (60) is mounted is also referred to as a mounting substrate.

[0205] The device (60) may be a semiconductor device. The semiconductor device includes a transistor formed by a semiconductor such as silicon. The semiconductor device is, for example, a CPU, GPU, FPGA, sensor, memory, etc. The semiconductor device may be a chiplet in which semiconductor devices such as a CPU, GPU, FPGA, sensor, memory, etc. are divided by function.

[0206] The element (60) may include a plurality of terminals (61). Each of the plurality of terminals (61) may be connected to a corresponding first bump (51).

[0207] The through-electrode substrate (10) on which the element (60) is mounted may be mounted on a wiring board such as a motherboard, although not shown. For example, a plurality of second bumps (52) may each be connected to a corresponding pad on the wiring board.

[0208] (8th Variation)

[0209] FIG. 24 is a cross-sectional view illustrating a through-electrode substrate (10) in the eighth modified example. The first wiring layer (50A) of the through-electrode substrate (10) of FIG. 24 is different from the through-electrode substrate (10) of FIG. 21 in that it comprises a plurality of third conductive layers (39) and a third resin layer (37).

[0210] As shown in FIG. 24, a plurality of third conductive layers (39) may be connected to each of the plurality of first conductive layers (35). In other words, a plurality of third conductive layers (39) may be connected to one first conductive layer (35). The third resin layer (37) is located between the first conductive layer (35) and the plurality of third conductive layers (39) in the third direction D3.

[0211] The third conductive layer (39) includes a conductive material. The conductive material may include metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, titanium, chromium, zinc, or alloys using these.

[0212] The third resin layer (37) includes a resin material having insulating properties. The resin material is an organic material such as polyimide, epoxy, acrylic, polyphenyl ether, etc.

[0213] As shown in FIG. 24, the through electrode substrate (10) may have a plurality of first bumps (51) located on a plurality of third conductive layers (39).

[0214] As shown in FIG. 25, the through electrode substrate (10) may be provided with an element (60). The element (60) may include a plurality of terminals (61). Each of the plurality of terminals (61) may be connected to a corresponding first bump (51).

[0215] The number and arrangement of the third conductive layer (39) connected to one first conductive layer (35) are determined according to the number and arrangement of the terminals (61) of the element (60). According to the eighth variation, by connecting a plurality of third conductive layers (39) to one first conductive layer (35), the through electrode substrate (10) can be suitable for various arrangements of a plurality of terminals (61).

[0216] (Ninth Variation)

[0217] FIG. 26 is a cross-sectional view illustrating a through-electrode substrate (10) in a ninth modified example. Two adjacent through-electrodes (20) are also referred to as a first through-electrode (20A) and a second through-electrode (20B). The first through-electrode (20A) may be connected to a power source potential, and the second through-electrode (20B) may be connected to a ground potential.

[0218] The first conductive layer (35) connected to the first through electrode (20A) may be extended outwardly beyond the contour (211) of the first part (21) of the first through electrode (20A). The first part (21) of the second through electrode (20B) may be extended outwardly beyond the contour (351) of the first conductive layer (35) connected to the first part (21) of the second through electrode (20B). In the third direction D3, a part of the first conductive layer (35) connected to the first through electrode (20A) and a part of the first part (21) of the second through electrode (20B) may be facing each other. A part of the first resin layer (33) is located between the part of the first conductive layer (35) and the part of the first part (21) that are facing each other. A capacitor (70) is formed by a part of the first conductive layer (35), a part of the first part (21), and a part of the first resin layer (33).

[0219] The capacitance of the capacitor (70) is, for example, 1 pF or more, and may be 10 pF or more. The capacitance of the capacitor (70) is, for example, 1 nF or less, and may be 100 pF or less. The capacitor (70) can increase the stability of the power supply voltage of the element (60).

[0220] (10th variation)

[0221] FIG. 27 is a cross-sectional view illustrating a through-electrode substrate (10) in a 10th modified example. The through-electrode substrate (10) may have a plurality of through-electrodes (80) having a single via structure in addition to a plurality of through-electrodes (20) having a multi-via structure. The plurality of through-electrodes (20) may be electrically connected to a power supply potential or a ground potential. The plurality of through-electrodes (80) may be electrically connected to a wiring or terminal through which data is transmitted.

[0222] FIG. 28 is a drawing showing an example of a product in which a through-electrode substrate (10) is mounted. The through-electrode substrate (10) can be used in various products. For example, it is mounted in a laptop-type personal computer (110), a tablet terminal (120), a mobile phone (130), a smartphone (140), a digital video camera (150), a digital camera (160), a digital watch (170), a server (180), etc.

[0223] (11th Variation Example)

[0224] FIG. 30 is a cross-sectional view illustrating a through-electrode substrate (10) in the 10th modified example. The example shown in FIG. 30 differs from the example shown in FIG. 23 in that a plurality of terminals (61) of the element (60) are connected to the second bump (52).

[0225] The through-electrode substrate (10) on which the element (60) is mounted may be mounted on a wiring board such as a motherboard, although not shown. For example, a plurality of first bumps (51) may each be connected to a pad corresponding to the wiring board.

[0226] (12th Variation Example)

[0227] FIG. 31 is a plan view showing a portion of the through-electrode substrate (10) in the 12th modified example. FIG. 32 is a cross-sectional view along line XXXII-XXXII of the through-electrode substrate (10) of FIG. 31.

[0228] The first wiring layer (50A) may include a plurality of first conductive layers (35) connected to each of the plurality of first parts (21). That is, a plurality of first conductive layers (35) may be connected to one first part (21). The plurality of first conductive layers (35) connected to one first part (21) may be separated from each other in the in-plane direction of the first surface (13).

[0229] The first resin layer (33) of the first wiring layer (50A) may include a plurality of openings (331). Each of the plurality of openings (331) of the first resin layer (33) overlaps with the first part (21) when viewed in a planar view. Each of the plurality of openings (331) of the first resin layer (33) may overlap with the through hole (15) and the inner part (26) when viewed in a planar view. Each of the plurality of first conductive layers (35) connected to one first part (21) may be connected to the first part (21) at the opening (331).

[0230] The second wiring layer (50B) may include a plurality of second conductive layers (36) connected to each of the plurality of second parts (22). That is, a plurality of second conductive layers (36) may be connected to one second part (22). The plurality of second conductive layers (36) connected to one second part (22) may be separated from each other in the in-plane direction of the second surface (14).

[0231] The second resin layer (34) of the second wiring layer (50B) may include a plurality of openings (341). Each of the plurality of openings (341) of the second resin layer (34) overlaps with the second part (22) when viewed in a planar view. Each of the plurality of openings (341) of the second resin layer (34) may overlap with the through hole (15) and the inner part (26) when viewed in a planar view. Each of the plurality of second conductive layers (36) connected to one second part (22) may be connected to the second part (22) at the opening (341).

[0232] A plurality of internal parts (26) connected to one first part (21) may each be field vias.

[0233] Although not a city, multiple internal parts (26) may each be vias of a type other than field vias. When multiple internal parts (26) are each vias of a type other than field vias, multiple openings (331) of the first resin layer (33) do not need to overlap with the through hole (15) and the internal part (26) when viewed in a planar view.

[0234] (13th Variation Example)

[0235] FIG. 33 is a plan view illustrating a portion of a through-electrode substrate (10) in the 13th modified example. FIG. 34 is a cross-sectional view along line XXXIV-XXXIV of the through-electrode substrate (10) of FIG. 33. The through-electrode substrate (10) comprises a substrate (12), a plurality of through-electrodes (20), a first wiring layer (50A), and a second wiring layer (50B).

[0236] The through electrode substrate (10) in the 13th variant is different from the above-described embodiment and variant in that the through electrode (20) does not include the first part (21) and the second part (22).

[0237] In the through electrode substrate (10) of the 13th modified example, the internal portions (26) located in the plurality of through holes (15) are each field vias. Each of the plurality of internal portions (26) includes a first end surface (261) and a second end surface (262). The first end surface (261) and the second end surface (262) are end surfaces of the internal portions (26) in the thickness direction of the substrate (12). The first end surface (261) is close to the first surface (13). The second end surface (262) is close to the second surface (14).

[0238] The inner portion (26) has a thickness T6 in the thickness direction of the substrate (12). The thickness T6 of the inner portion (26) may be approximately equal to the thickness T0 of the substrate (12). The ratio T6 / T0 of the thickness T6 of the inner portion (26) to the thickness T0 of the substrate (12) may be, for example, 0.80 or greater, 0.85 or greater, or 0.90 or greater. The ratio T6 / T0 may be, for example, 1.20 or less, 1.15 or less, or 1.10 or less. The thickness T6 is measured along a hypothetical straight line extending in the thickness direction through the center point of the through hole (15) viewed in a planar view. An inner portion (26) that satisfies the above numerical range regarding T6 / T0 is referred to as a field via.

[0239] In this modified example, as in the above-described embodiment and modified example, a plurality of internal parts (26) are electrically connected to each other to form a single through electrode (20). That is, in this modified example, a multi-via structure is adopted. Therefore, even if the dimensions of the through hole (15) are small, a sufficient allowable current of the through electrode (20) can be realized. Since the dimensions of the through hole (15) are small, defects such as voids are suppressed from forming in the internal parts (26).

[0240] In this modified example, a plurality of internal portions (26) are electrically connected to each other by at least one conductive layer included in the first wiring layer (50A). The first wiring layer (50A) will be described.

[0241] As shown in FIG. 33, the first wiring layer (50A) may include a first resin layer (33) and a plurality of first conductive layers (35). As shown in FIG. 34, the first resin layer (33) is located on the first surface (13). The first resin layer (33) may be in contact with the first surface (13).

[0242] The first resin layer (33) includes a plurality of openings (331) penetrating the first resin layer (33). As shown in FIGS. 33 and 34, the plurality of openings (331) of the first resin layer (33) may each overlap one through hole (15) and one inner part (26) when viewed in a planar view. In the example shown in FIGS. 33 and 34, four openings (331) each overlap one of the corresponding inner parts (26) among the four inner parts (26).

[0243] The first resin layer (33) may overlap the boundary between the wall surface (16) of the through hole (15) and the inner part (26) when viewed in a planar view. For example, the first resin layer (33) may overlap the first section (161) of the wall surface (16) when viewed in a planar view. The first section (161) defines the boundary between the wall surface (16) and the inner part (26) on the first surface (13).

[0244] In the manufacturing process of the through-electrode substrate (10), gas may be generated. For example, gas is generated from the internal part (26). The gas is, for example, water vapor. The gas is generated, for example, during the process of heating the components of the through-electrode substrate (10).

[0245] Gas remains in the internal gap of the penetrating electrode substrate (10). For example, gas remains in the gap between the wall surface (16) and the internal part (26). If gas continues to remain in the internal gap of the penetrating electrode substrate (10), there is a concern that deformation, damage, etc. may occur inside the penetrating electrode substrate (10) due to the pressure of the gas.

[0246] In this modified example, the first resin layer (33) overlaps the boundary between the wall surface (16) and the inner part (26) of the through hole (15) when viewed in a planar view. The molecular structure of the resin material constituting the first resin layer (33) is larger than the molecular structure of a gas such as water vapor. The gas in the gap between the wall surface (16) and the inner part (26) is discharged to the outside of the through electrode substrate (10) through the first resin layer (33). Therefore, deformation, damage, etc., occurring inside the through electrode substrate (10) is suppressed.

[0247] Each of the plurality of first conductive layers (35) is located on the first resin layer (33). Each of the plurality of first conductive layers (35) has a contour (351). The contour (351) is the outer edge of the first conductive layer (35) when viewed in a planar view. As shown in FIG. 33, the contour (351) of the plurality of first conductive layers (35) may each surround the first end (161) of the wall surface (16) of the plurality of through holes (15) when viewed in a planar view. That is, the first end (161) of the wall surface (16) of the plurality of through holes (15) may be located inside the contour (351) of one of the first conductive layers (35).

[0248] Each first conductive layer (35) may be connected to a plurality of internal parts (26) in a plurality of openings (331). As a result, a plurality of internal parts (26) are electrically connected to each other by one first conductive layer (35). A plurality of internal parts (26) electrically connected by one first conductive layer (35) constitute one through electrode (20).

[0249] Multiple internal parts (26) may also be electrically connected to each other by at least one conductive layer included in the second wiring layer (50B). The second wiring layer (50B) will be described.

[0250] The second wiring layer (50B) may include a second resin layer (34) and a plurality of second conductive layers (36). The second resin layer (34) is located on the second surface (14). The second resin layer (34) may be in contact with the second surface (14).

[0251] The second resin layer (34) includes a plurality of openings (341) that penetrate the second resin layer (34). Each of the plurality of openings (341) of the second resin layer (34) may overlap with the through hole (15) and the inner part (26) when viewed in a planar view.

[0252] The second resin layer (34) may overlap the boundary between the wall surface (16) and the inner part (26) of the through hole (15) when viewed in a planar view. For example, the second resin layer (34) may overlap the second section (162) of the wall surface (16) when viewed in a planar view. The second section (162) defines the boundary between the wall surface (16) and the inner part (26) on the second surface (14).

[0253] As with the first resin layer (33), the molecular structure of the resin material constituting the second resin layer (34) is larger than the molecular structure of a gas such as water vapor. Gas in the gap between the wall surface (16) and the inner part (26) is discharged to the outside of the penetrating electrode substrate (10) through the second resin layer (34). Therefore, deformation, damage, etc., inside the penetrating electrode substrate (10) is suppressed.

[0254] Each of the multiple second conductive layers (36) is located on the second resin layer (34). Each of the outlines (361) of the multiple second conductive layers (36) may surround the second section (162) of the wall surface (16) of the multiple through holes (15) when viewed in a planar view. That is, the second section (162) of the wall surface (16) of the multiple through holes (15) may be located inside the outline (361) of one second conductive layer (36).

[0255] Each second conductive layer (36) may be connected to multiple internal parts (26) in multiple openings (341). As a result, multiple internal parts (26) are electrically connected to each other by one second conductive layer (36).

[0256] The specific configuration of the inner part (26) including the field via and the specific configuration of the through hole (15) are not specifically limited. For example, as shown in FIG. 34, the inner part (26) and the through hole (15) may have a constant dimension regardless of their position in the third direction D3.

[0257] FIG. 35 is a cross-sectional view illustrating an example of a through electrode substrate (10). The through hole (15) may include a minimum portion (163). In this case, the dimensions of the internal portion (26) in the plane direction of the substrate (12) are minimized at the minimum portion (163).

[0258] FIG. 36 is a cross-sectional view illustrating an example of a through-electrode substrate (10). The internal portion (26) containing the field via may include a plating layer (201) and a seed layer (202). The plating layer (201) is positioned to overlap the center point of the through hole (15) when viewed in a planar view. The seed layer (202) is positioned between the plating layer (201) and the wall surface (16).

[0259] (14th Variation Example)

[0260] FIG. 37 is a cross-sectional view illustrating a through-electrode substrate (10) in the 14th modified example. The through-electrode substrate (10) comprises a substrate (12), a plurality of through-electrodes (20), a first wiring layer (50A), and a second wiring layer (50B).

[0261] The through electrode substrate (10) in the 14th variant is different from the through electrode substrate (10) in the 13th variant in that the first wiring layer (50A) includes a plurality of insulating layers and a plurality of conductive layers stacked in the thickness direction of the substrate (12).

[0262] As shown in FIG. 37, the first wiring layer (50A) may include a first resin layer (33), a third resin layer (37), a fifth resin layer (41), a first conductive layer (35), and a third conductive layer (39).

[0263] As in the case of the 13th variant, a plurality of internal parts (26) may be electrically connected to each other by one first conductive layer (35).

[0264] The third resin layer (37) is located on the first resin layer (33) and the first conductive layer (35). The third resin layer (37) includes a plurality of openings (371). The third conductive layer (39) is located on the third resin layer (37). The third conductive layer (39) may be connected to the first conductive layer (35) at the plurality of openings (371) of the third resin layer (37).

[0265] The fifth resin layer (41) is located on the third resin layer (37) and the third conductive layer (39). The fifth resin layer (41) includes at least one opening (411). The opening (411) of the fifth resin layer (41) may overlap the third conductive layer (39) when viewed in a planar view. In other words, a portion of the third conductive layer (39) may be exposed to the opening (411) of the fifth resin layer (41).

[0266] The through electrode substrate (10) may have a first bump (51) located on the conductive layer of the first wiring layer (50A). For example, as shown in FIG. 37, the first bump (51) may be located on the third conductive layer (39) at the opening (411) of the fifth resin layer (41).

[0267] One first bump (51) may be electrically connected to a plurality of internal parts (26). In the example shown in FIG. 37, one first bump (51) is electrically connected to a plurality of internal parts (26) through a third conductive layer (39) and a first conductive layer (35). The through electrode substrate (10) may have a plurality of first bumps (51), each of which is electrically connected to a plurality of internal parts (26).

[0268] Although not a city, the through electrode substrate (10) having a plurality of first bumps (51) may be mounted on a wiring board such as a motherboard. For example, each of the plurality of first bumps (51) may be connected to a corresponding pad on the wiring board.

[0269] It is preferable that the dimension of the opening in the resin layer of the first wiring layer (50A) in the in-plane direction of the first surface (13), which relates to the electrical path between the inner part (26) and the first bump (51), be 50 μm or more. For example, it is preferable that the dimension of the opening (331) of the first resin layer (33) and the dimension of the opening (371) of the third resin layer (37) are each 50 μm or more. As a result, the electrical resistance in the path between the inner part (26) and the first bump (51) is reduced. Thus, a sufficient allowable current of the first bump (51) can be realized.

[0270] As shown in FIG. 37, the second wiring layer (50B) may include a second resin layer (34), a fourth resin layer (38), a second conductive layer (36), and a plurality of fourth conductive layers (40).

[0271] As in the case of the 13th variant, a plurality of internal parts (26) may be electrically connected to each other by one second conductive layer (36).

[0272] The fourth resin layer (38) is located on the second resin layer (34) and the second conductive layer (36). The fourth resin layer (38) includes a plurality of openings (381). A plurality of fourth conductive layers (40) are each located on the fourth resin layer (38). A plurality of fourth conductive layers (40) may each be connected to one second conductive layer (36) in a plurality of openings (381) of the fourth resin layer (38). A plurality of fourth conductive layers (40) connected to one second conductive layer (36) may be separated from each other in the in-plane direction of the second surface (14).

[0273] Although not illustrated, the through electrode substrate (10) may have a plurality of second bumps each located on a plurality of fourth conductive layers (40). Although not illustrated, a plurality of terminals of the element may be connected to the corresponding second bumps.

[0274] (15th Variation)

[0275] FIG. 38 is a cross-sectional view illustrating a through-electrode substrate (10) in the 15th modified example. The through-electrode substrate (10) comprises a substrate (12), a plurality of through-electrodes (20), a first wiring layer (50A), and a second wiring layer (50B).

[0276] As shown in FIG. 38, the first wiring layer (50A) may include a first resin layer (33), a third resin layer (37), a fifth resin layer (41), a plurality of first conductive layers (35) and third conductive layers (39).

[0277] The through electrode substrate (10) in the 15th variant is different from the through electrode substrate (10) in the 14th variant in that a plurality of internal parts (26) are electrically connected to each other by a third conductive layer (39) rather than a first conductive layer (35).

[0278] In this modified example, a plurality of first conductive layers (35) are each connected to one internal portion (26) in one opening (331) of the first resin layer (33). For example, four first conductive layers (35) are each connected to one internal portion (26) in one corresponding opening (331) among the four openings (331). The plurality of first conductive layers (35) are separated from each other in the in-plane direction of the first surface (13). Accordingly, the plurality of internal portions (26) are not electrically connected according to the first conductive layers (35).

[0279] The third resin layer (37) is located on the first resin layer (33) and on a plurality of first conductive layers (35). The third resin layer (37) includes a plurality of openings (371). Each of the plurality of openings (371) overlaps the first conductive layer (35). One third conductive layer (39) is connected to a plurality of first conductive layers (35) at the plurality of openings (371). As a result, a plurality of internal parts (26) are electrically connected to each other by the third conductive layer (39). In this modified example, a plurality of internal parts (26) electrically connected to each other constitute a single through electrode (20). That is, in this modified example, a multi-via structure is adopted.

[0280] The through electrode substrate (10) may have a plurality of through electrodes (20), similar to the embodiments and variations described above. Each of the plurality of through electrodes (20) may include a plurality of internal portions (26) electrically connected to one another by a third conductive layer (39).

[0281] The conductive layer of the first wiring layer (50A) that electrically connects multiple internal parts (26) may be a conductive layer other than the third conductive layer (39). For example, although not illustrated, a fifth conductive layer located on the fifth resin layer (41) may electrically connect multiple internal parts (26).

[0282] It is preferable that the dimension of the opening in the resin layer of the first wiring layer (50A) in the in-plane direction of the first surface (13), which relates to the electrical path between the inner part (26) and the first bump (51), be 50 μm or more. For example, it is preferable that the dimension of the opening (331) of the first resin layer (33) and the dimension of the opening (371) of the third resin layer (37) are each 50 μm or more. As a result, the electrical resistance in the path between the inner part (26) and the first bump (51) is reduced. Thus, a sufficient allowable current of the first bump (51) can be realized.

[0283] As shown in FIG. 38, the second wiring layer (50B) may include a second resin layer (34), a fourth resin layer (38), a plurality of second conductive layers (36) and a plurality of fourth conductive layers (40).

[0284] Each of the multiple second conductive layers (36) may be connected to an inner portion (26) in the opening (341) of the second resin layer (34). The multiple second conductive layers (36) may be separated from each other in the in-plane direction of the second surface (14). In this case, the multiple inner portions (26) are not electrically connected according to the second conductive layers (36).

[0285] Each of the plurality of fourth conductive layers (40) may be connected to the second conductive layer (36) at the opening (381) of the fourth resin layer (38). The plurality of fourth conductive layers (40) may be separated from each other in the in-plane direction of the second surface (14). In this case, the plurality of internal parts (26) are not electrically connected by the fourth conductive layer (40).

[0286] Although several variations of the above-described embodiment have been described, it is, of course, possible to appropriately combine multiple variations and apply them to the above-described embodiment.

[0287] Examples

[0288] Next, embodiments of the present disclosure will be explained more specifically by way of examples, but the embodiments of the present disclosure are not limited to the description of the following examples as long as they do not depart from the gist thereof.

[0289] (Example 1-1)

[0290] As a substrate (12), a glass substrate having a thickness T0 of 800 μm was prepared. Subsequently, a plurality of through holes (15) as shown in FIG. 4 were formed in the substrate (12). The through holes (15) include a first section (161) having a first dimension R1, a second section (162) having a second dimension R2, and a minimum section (163) having a minimum dimension R3. The first section (161), the second section (162), and the minimum section (163) have a circular outline when viewed in a planar view. The first dimension R1, the second dimension R2, and the minimum dimension R3 were 85 μm, 85 μm, and 50 μm, respectively.

[0291] Next, a plurality of through electrodes (20) and a plurality of internal resins (30) as shown in FIG. 4 were formed on the substrate (12). Each of the plurality of through electrodes (20) includes a plating layer (201) containing copper and a seed layer (202). Each of the plurality of through electrodes (20) includes one first part (21), one second part (22), and four internal parts (26). Each internal part (26) includes a third part (23), a fourth part (24), and a closed part (25). The thickness T3 of the third part (23) and the thickness T4 of the fourth part (24) were both 20 μm. The distance from the first surface (13) to the first closed surface (251) of the closed part (25) in the thickness direction of the substrate (12), i.e., the first distance K1, was 150 μm. The distance from the second surface (14) in the thickness direction of the substrate (12) to the second closed surface (252) of the closed portion (25), i.e., the second distance K2, was 150 μm. The thickness T5 of the closed portion (25) in the thickness direction of the substrate (12) was 500 μm. The second pitch P2 of the plurality of through holes (15) overlapping the first portion (21) of one through electrode (20) was 100 μm.

[0292] The reliability of the through electrode substrate (10) of Example 1-1 was evaluated.

[0293] In the reliability evaluation, 1,000 thermal cycles are applied to the through-electrode substrate (10), and then the appearance of the through-electrode substrate (10) is observed. Specifically, it is checked whether defects such as cracks have occurred in the appearance of the through-electrode (20) of the through-electrode substrate (10). If defects such as cracks have occurred, the through-electrode substrate (10) under evaluation is judged as "NG". If no defects such as cracks have occurred, an additional 1,000 thermal cycles are applied to the through-electrode substrate (10), and then the appearance of the through-electrode substrate (10) is observed. After a total of 2,000 thermal cycles, if defects such as cracks have occurred, the through-electrode substrate (10) under evaluation is judged as "Good". After a total of 2,000 thermal cycles, if no defects such as cracks have occurred, the through-electrode substrate (10) under evaluation is judged as "Excellent".

[0294] One thermal cycle includes a heating process, a high-temperature maintenance process, a cooling process, and a low-temperature maintenance process. The heating process is a process of changing the surrounding environment of the through-electrode substrate (10) from -55°C to +125°C over a period of 30 minutes. The high-temperature maintenance process is a process of maintaining the surrounding environment of the through-electrode substrate (10) at +125°C for 30 minutes. The heating process is a process of changing the surrounding environment of the through-electrode substrate (10) from +125°C to -55°C over a period of 30 minutes. The low-temperature maintenance process is a process of maintaining the surrounding environment of the through-electrode substrate (10) at -55°C for 30 minutes.

[0295] In the through-electrode substrate (10) of Example 1-1, defects such as cracks occurred after 1,000 thermal cycles. The through-electrode substrate (10) of Example 1-1 is determined to be "NG".

[0296] (Examples 1-2 to 1-9)

[0297] A through-electrode substrate (10) was fabricated by changing the second pitch P2 of a plurality of through holes (15) from the value in Example 1-1. Subsequently, a reliability evaluation of the through-electrode substrate (10) was performed, just as in the case of Example 1-1. The results are shown in FIG. 29.

[0298] (Example 2-1)

[0299] As a substrate (12), a glass substrate having a thickness T0 of 400 μm was prepared. Subsequently, a plurality of through holes (15) as shown in FIG. 15 were formed in the substrate (12). The through holes (15) include a first section (161) having a first dimension R1, a second section (162) having a second dimension R2, and a minimum section (163) having a minimum dimension R3. The first section (161), the second section (162), and the minimum section (163) have a circular outline when viewed in a planar view. The first dimension R1, the second dimension R2, and the minimum dimension R3 were 85 μm, 85 μm, and 70 μm, respectively.

[0300] Next, a plurality of through electrodes (20) and a plurality of internal resins (30) as shown in FIG. 15 were formed on the substrate (12). Each of the plurality of through electrodes (20) includes a plating layer (201) containing copper and a seed layer (202). Each of the plurality of through electrodes (20) includes one first portion (21), one second portion (22), and four internal portions (26). Each internal portion (26) is positioned on the wall surface (16) extending from the first portion (161) to the second portion (162). The thickness of the internal portion (26) was 20 μm. The second pitch P2 of the plurality of through holes (15) overlapping the first portion (21) of one through electrode (20) was 100 μm.

[0301] As in the case of Example 1-1, a reliability evaluation of the through-electrode substrate (10) was performed. The results are shown in FIG. 29.

[0302] (Examples 2-2 to 2-9)

[0303] A through-electrode substrate (10) was fabricated by changing the second pitch P2 of a plurality of through holes (15) from the value in Example 2-1. Subsequently, a reliability evaluation of the through-electrode substrate (10) was performed, just as in the case of Example 1-1. The results are shown in FIG. 29.

[0304] (Example 3-1)

[0305] As a substrate (12), a glass substrate having a thickness T0 of 400 μm was prepared. Subsequently, a plurality of through holes (15) as shown in FIG. 16 were formed in the substrate (12). The through holes (15) include a first section (161) having a first dimension R1 and a second section (162) having a second dimension R2. The first section (161) and the second section (162) have a circular outline when viewed in a planar view. The first dimension R1 and the second dimension R2 were 85 μm and 85 μm, respectively.

[0306] Next, a plurality of through electrodes (20) and a plurality of internal resins (30) as shown in FIG. 16 were formed on the substrate (12). Each of the plurality of through electrodes (20) includes a plating layer (201) containing copper and a seed layer (202). Each of the plurality of through electrodes (20) includes one first portion (21), one second portion (22), and four internal portions (26). Each internal portion (26) is positioned on the wall surface (16) extending from the first portion (161) to the second portion (162). The thickness of the internal portion (26) was 20 μm. The second pitch P2 of the plurality of through holes (15) overlapping the first portion (21) of one through electrode (20) was 100 μm.

[0307] As in the case of Example 1-1, a reliability evaluation of the through-electrode substrate (10) was performed. The results are shown in FIG. 29.

[0308] (Examples 3-2 to 3-9)

[0309] A through-electrode substrate (10) was fabricated by changing the second pitch P2 of the plurality of through holes (15) from the value in Example 3-1. Subsequently, a reliability evaluation of the through-electrode substrate (10) was performed, just as in the case of Example 1-1. The results are shown in FIG. 29.

[0310] (Example 4-1)

[0311] As a substrate (12), a glass substrate having a thickness T0 of 500 μm was prepared. Subsequently, a plurality of through holes (15) as shown in FIG. 17 were formed in the substrate (12). The through holes (15) include a first section (161) having a first dimension R1, a second section (162) having a second dimension R2, and a minimum section (163) having a minimum dimension R3. The first section (161), the second section (162), and the minimum section (163) have a circular outline when viewed in a planar view. The first dimension R1, the second dimension R2, and the minimum dimension R3 were 85 μm, 85 μm, and 50 μm, respectively.

[0312] Next, a plurality of through electrodes (20) as illustrated in FIG. 17 were formed on the substrate (12). Each of the plurality of through electrodes (20) includes a plating layer (201) containing copper and a seed layer (202). Each of the plurality of through electrodes (20) includes one first portion (21), one second portion (22), and four inner portions (26). Each inner portion (26) occupies the entire space of the through hole (15). The second pitch P2 of the plurality of through holes (15) overlapping the first portion (21) of one through electrode (20) was 100 μm.

[0313] As in the case of Example 1-1, a reliability evaluation of the through-electrode substrate (10) was performed. The results are shown in FIG. 29.

[0314] (Examples 4-2 to 4-9)

[0315] A through-electrode substrate (10) was fabricated by changing the second pitch P2 of the plurality of through holes (15) from the value in Example 4-1. Subsequently, a reliability evaluation of the through-electrode substrate (10) was performed, as in the case of Example 1-1. The results are shown in FIG. 29.

[0316] (Example 5-1)

[0317] As a substrate (12), a glass substrate having a thickness T0 of 600 μm was prepared. Subsequently, a plurality of through holes (15) as shown in FIG. 18 were formed in the substrate (12). The through holes (15) include a first section (161) having a first dimension R1 and a second section (162) having a second dimension R2. The first section (161) and the second section (162) have a circular outline when viewed in a planar view. The first dimension R1 and the second dimension R2 were 50 μm and 50 μm, respectively.

[0318] Next, a plurality of through electrodes (20) as illustrated in FIG. 18 were formed on the substrate (12). Each of the plurality of through electrodes (20) includes a plating layer (201) containing copper and a seed layer (202). Each of the plurality of through electrodes (20) includes one first portion (21), one second portion (22), and four inner portions (26). Each inner portion (26) occupies the entire space of the through hole (15). The second pitch P2 of the plurality of through holes (15) overlapping the first portion (21) of one through electrode (20) was 100 μm.

[0319] As in the case of Example 1-1, a reliability evaluation of the through-electrode substrate (10) was performed. The results are shown in FIG. 29.

[0320] (Examples 5-2 to 5-9)

[0321] A through-electrode substrate (10) was fabricated by changing the second pitch P2 of a plurality of through holes (15) from the value in Example 5-1. Subsequently, a reliability evaluation of the through-electrode substrate (10) was performed, as in the case of Example 1-1. The results are shown in FIG. 29.

[0322] In the through electrode (20) illustrated in FIG. 4 or FIG. 15, it is preferable that the second pitch P2 is 125 μm or more, and more preferable that the second pitch P2 is 300 μm or more. In the through electrode (20) illustrated in FIG. 16, it is preferable that the second pitch P2 is 150 μm or more, and more preferable that the second pitch P2 is 350 μm or more. In the through electrode (20) illustrated in FIG. 17, it is preferable that the second pitch P2 is 175 μm or more, and more preferable that the second pitch P2 is 350 μm or more. In the through electrode (20) illustrated in FIG. 18, it is preferable that the second pitch P2 is 200 μm or more.

[0323] (Example 6)

[0324] A through-electrode substrate (10) was designed having a field via of a single via structure formed by a through hole (15) that does not include a minimum portion (163), and a copper plate located on the surface of a substrate (12). The substrate (12) contains FR4 and has a thickness T0 of 400 μm. The copper plate has a width of 0.5 mm and a thickness of 18 μm. Subsequently, a simulation was performed to simulate heat dissipation of the through-electrode substrate (10). The finite element method was used in the simulation. In the simulation, it was assumed that heat is released by convection on the surface of the copper plate. The equation for the heat flux is as follows.

[0325] q=h(T Cu -T air )

[0326] q is the heat flux. The unit of heat flux q is W / m². h is the thermal conductivity in convection. The unit of thermal conductivity h is W / m²·K. TCu is the temperature of the copper plate. T air is the temperature of the air. 373 [W / m²·K] was used as the value for the thermal conductivity h. This value was calculated based on the heat dissipation characteristics of the wiring board described in JIS C 5012:1993. Specifically, in the test described in JIS C 5012:1993, a copper plate having a width of 0.6 mm and a thickness of 18 μm was placed on the substrate, and when a direct current of 1 A was passed through the copper plate, a temperature rise of 10°C occurred. By applying this test result to the above heat flux equation, a thermal conductivity h value of 373 [W / m²·K] is calculated. Other conditions in the simulation are as follows.

[0327] · Thermal conductivity of copper: 400 [W / m·K]

[0328] · Resistivity of copper: 1.68 × 10⁻⁶ -8 [Ω·m]

[0329] · Thermal conductivity of FR4: 0.3 [W / m·K]

[0330] Based on the simulation, the first dimension R1 and the second dimension R2 were calculated when the through electrode substrate (10) of Example 6 satisfies the above-described condition of withstand current. When the first dimension R1 and the second dimension R2 are 94 μm, the temperature rise is 10°C and the value of the current flowing through the copper plate and the field via is 0.96 A. Therefore, it is presumed that when the first dimension R1 and the second dimension R2 are 94 μm or more, the above-described condition of withstand current is satisfied.

[0331] It is presumed that when a multi-via structure is adopted, the above-described condition of withstand current is satisfied even if the first dimension R1 and the second dimension R2 are less than 94 μm.

[0332] When the first dimension R1 and the second dimension R2 are 94 μm, the value of the current flowing through the copper plate and the field via is 0.96 A, and the temperature of the through electrode substrate (10) is 260°C, the thermal stress generated between the substrate (12) and the field via was calculated based on simulation. In the first stage (161) of the through hole (15), the thermal stress showed a maximum value of 187 MPa.

[0333] (Example 7)

[0334] A through electrode substrate (10) was designed having a single via structure conformal via formed by a through hole (15) that does not include a minimum portion (163), and a copper plate located on the surface of a substrate (12).

[0335] As in the case of Example 6, the thickness of the first dimension R1, the second dimension R2, and the inner part (26) was calculated based on simulation when the through electrode substrate (10) of Example 7 satisfies the above-described conditions for withstand current. When the first dimension R1 and the second dimension R2 are 104 μm and the thickness of the inner part (26) is 30 μm, the temperature rise is 10°C and the value of the current flowing through the copper plate and the conformal via is 0.97 A. Therefore, it is presumed that the above-described conditions for withstand current are satisfied when the first dimension R1 and the second dimension R2 are 104 μm or more and the thickness of the inner part (26) is 30 μm or more.

[0336] It is presumed that when a multi-via structure is adopted, the first dimension R1 and the second dimension R2 are less than 104 μm and the thickness of the inner part (26) is less than 30 μm, the above-described condition of withstand current is satisfied.

[0337] When the first dimension R1 and the second dimension R2 are 104 μm, the thickness of the inner part (26) is 30 μm, the value of the current flowing through the copper plate and the field via is 0.97 A, and the temperature of the through electrode substrate (10) is 260°C, the thermal stress generated between the substrate (12) and the conformal via was calculated based on simulation. In the first stage (161) of the through hole (15), the thermal stress showed a maximum value of 171 MPa.

[0338] (Example 8)

[0339] A through electrode substrate (10) was designed having a through electrode of a single via structure formed by a through hole (15) including a minimum portion (163) and a copper plate located on the surface of a substrate (12). The through electrode includes an internal portion (26) shown in FIG. 4.

[0340] As in the case of Example 6, based on simulation, the thickness of the first dimension R1, the second dimension R2, the minimum dimension R3, and the inner part (26) were calculated when the through electrode substrate (10) of Example 8 satisfies the above-described conditions for withstand current. When the first dimension R1 and the second dimension R2 are 180 μm, the minimum dimension R3 is 60 μm, and the thicknesses T3 and T4 of the inner part (26) are 30 μm, the temperature rise is 10°C and the value of the current flowing through the copper plate and the conformal via is 0.96 A. Therefore, it is presumed that the above-described conditions for withstand current are satisfied when the first dimension R1 and the second dimension R2 are 180 μm or more, the minimum dimension R3 is 60 μm or more, and the thicknesses T3 and T4 of the inner part (26) are 30 μm or more.

[0341] It is presumed that when a multi-via structure is adopted, the above-described conditions for withstand current are satisfied even if the first dimension R1 and the second dimension R2 are less than 180 μm, the minimum dimension R3 is less than 60 μm, and the thickness T3 and the thickness T4 are less than 30 μm.

[0342] When the first dimension R1 and the second dimension R2 are 180 μm or more, the minimum dimension R3 is 60 μm or more, the thickness T3 and thickness T4 of the inner part (26) are 30 μm or more, the value of the current flowing through the copper plate and field via is 0.96 A, and the temperature of the through electrode substrate (10) is 260°C, the thermal stress generated between the substrate (12) and the through electrode was calculated based on simulation. In the first stage (161) of the through hole (15), the thermal stress showed a maximum value of 93 MPa.

[0343] The maximum value of thermal stress in Example 8 was about half the maximum value of thermal stress in Examples 6 and 7. In the example shown in Example 8, since the through hole (15) includes the minimum part (163), the angles θ1 and θ2 are greater than 90°, and it is thought that the thermal stress is reduced.

[0344] (Example 9)

[0345] A through electrode substrate (10) was designed having a through electrode of a multi-via structure formed by through holes (15) including a minimum portion (163) and a copper plate located on the surface of a substrate (12). One through electrode (20) includes four internal portions (26) as shown in FIG. 4. The second pitch P2 of the four through holes (15) was 250 μm.

[0346] As in the case of Example 6, based on simulation, the first dimension R1, the second dimension R2, the minimum dimension R3, and the thickness of the inner part (26) were calculated when the through electrode substrate (10) of Example 9 satisfies the above-described condition of withstand current. The above-described condition of withstand current is satisfied when the first dimension R1 and the second dimension R2 are 70 μm, the minimum dimension R3 is 35 μm, and the thicknesses T3 and T4 of the inner part (26) are 30 μm. Therefore, it is presumed that the above-described condition of withstand current is satisfied when the through electrode (20) includes four or more inner parts (26), the first dimension R1 and the second dimension R2 are 70 μm or more, the minimum dimension R3 is 35 μm or more, and the thicknesses T3 and T4 of the inner part (26) are 30 μm or more. Explanation of the symbols

[0347] 10: Through-electrode substrate 12: Substrate 13: Page 1 14: Page 2 15: Through hole 16: Wall surface 161: 1st Division 162: 2nd Division 163: Minimum section 20: Penetrating electrode 201: Plating layer 202: Seed layer 21: Part 1 211: Outline 212: Opening 22: Part 2 23: Part 3 24: Part 4 25: Closed part 26: Internal part 30: Internal resin 31: First internal resin 32: Second inner resin 33: First resin layer 331: Opening 34: Second resin layer 35: 1st Challenge Layer 351: Outline 36: Second conductive layer 37: Third resin layer 38: 4th resin layer 39: 3rd conductive layer 40: 4th conductive layer 41: 5th resin layer 50A: 1st wiring layer 50B: 2nd wiring layer 51: 1st bump 52: 2nd bump 60: Component 61: Terminal 70: Capacitor 81: First resist layer 82: Second resist layer

Claims

Claim 1 A through electrode substrate comprising a first surface, a second surface located opposite to the first surface, and a plurality of through holes penetrating from the first surface to the second surface, and a plurality of through electrodes extending from the first surface to the second surface through the through holes, wherein each of the plurality of through electrodes comprises a plurality of internal portions located inside the plurality of through holes, a first portion located on the first surface and connected to the plurality of internal portions, and a second portion located on the second surface and connected to the plurality of internal portions, wherein each of the first portions of the plurality of through electrodes has a contour that surrounds the plurality of through holes when viewed in a planar view. Claim 2 A through electrode substrate according to claim 1, wherein each of the plurality of through holes comprises a wall surface including a first portion connected to the first surface, a second portion connected to the second surface, and a minimum portion located between the first portion and the second portion, and the through hole has a minimum dimension in the minimum portion that is the minimum value of the dimension of the through hole in the plane direction of the first surface, and each of the plurality of internal portions comprises a closing portion that closes the through hole at least in the minimum portion, a third portion located on the wall surface between the first portion and the closing portion, and a fourth portion located on the wall surface between the second portion and the closing portion. Claim 3 In paragraph 2, the closed portion comprises a first closed surface and a second closed surface, wherein the first closed surface is a surface of the closed portion facing the first surface, and the second closed surface is a surface of the closed portion facing the second surface, and the through electrode has a first distance which is the maximum value of the distance from the first surface to the first closed surface in the thickness direction of the substrate, and a second distance which is the maximum value of the distance from the second surface to the second closed surface in the thickness direction of the substrate, wherein the ratio of the first distance to the thickness of the substrate is 0.10 or greater, and the ratio of the second distance to the thickness of the substrate is 0.10 or greater, a through electrode substrate. Claim 4 A through electrode substrate according to paragraph 2, wherein a plurality of internal resins are provided for each of the plurality of through holes, and each of the plurality of internal resins comprises a first internal resin for the inner side of the third portion and a second internal resin for the inner side of the fourth portion. Claim 5 In claim 1, the plurality of through holes each have a wall surface including a first end connected to the first surface and a second end connected to the second surface, and the plurality of internal parts each are located on the wall surface to extend from the first end to the second end, and the through electrode substrate has a plurality of internal resins located inside the internal part of the through electrode within each of the plurality of through holes. Claim 6 A through electrode substrate according to claim 5, wherein each of the plurality of through holes includes a minimum portion located between the first stage and the second stage, and the through hole has a minimum dimension in the minimum portion that is the minimum value of the dimension of the through hole in the plane direction of the first surface. Claim 7 A through electrode substrate according to any one of claims 4 to 6, wherein the first portion of each of the plurality of through electrodes comprises a plurality of openings in which the internal resin is located. Claim 8 A through-electrode substrate according to claim 1, wherein the ratio of the thickness of the internal portion to the thickness of the substrate is 0.80 or more and 1.20 or less. Claim 9 A through electrode substrate according to any one of claims 1 to 6 and 8, comprising a plurality of first conductive layers connected to each of the first portions of the plurality of through electrodes, and a first resin layer located between the first portions of the plurality of through electrodes and the plurality of first conductive layers in the thickness direction of the substrate. Claim 10 In claim 9, a through electrode substrate having a plurality of first conductive layers each having a contour that surrounds a plurality of through holes when viewed in a planar view. Claim 11 A through-electrode substrate according to claim 10, comprising a plurality of third conductive layers connected to one of the first conductive layers, and a third resin layer located between one of the first conductive layers and the plurality of third conductive layers in the thickness direction of the substrate. Claim 12 A through electrode substrate according to claim 10, wherein the plurality of through electrodes comprises a first through electrode and a second through electrode adjacent to the first through electrode when viewed in a planar view, wherein the first conductive layer connected to the first through electrode extends outwardly beyond the contour of the first portion of the first through electrode, and the first portion of the second through electrode extends outwardly beyond the contour of the first conductive layer connected to the second through electrode, and wherein, in the thickness direction of the substrate, a portion of the first conductive layer connected to the first through electrode and a portion of the first portion of the second through electrode face each other. Claim 13 In claim 9, the first resin layer comprises an opening having a fourth dimension when viewed in a planar view, where a portion of the first conductive layer is located, and the through hole has a first dimension on the first surface, and the fourth dimension is larger than the first dimension, in a through electrode substrate. Claim 14 A through-electrode substrate comprising: a substrate including a first surface, a second surface located opposite to the first surface, and a plurality of through holes penetrating from the first surface to the second surface; a plurality of through electrodes extending from the first surface to the second surface through the through holes; and a first wiring layer located on the first surface and comprising at least one insulating layer and at least one conductive layer, wherein each of the plurality of through electrodes comprises a plurality of internal portions located inside the plurality of through holes, and the ratio of the thickness of the internal portions to the thickness of the substrate is 0.80 or more and 1.20 or less, wherein the at least one insulating layer comprises a first resin layer located on the first surface, wherein the first resin layer comprises a plurality of openings, wherein each of the plurality of openings overlaps the internal portions when viewed in a planar view, and wherein the first resin layer overlaps the boundary between the wall surface of the through hole and the internal portions when viewed in a planar view, and wherein the at least one conductive layer comprises a conductive layer electrically connected to the plurality of internal portions. Claim 15 A through-electrode substrate according to claim 14, wherein the at least one conductive layer comprises a first conductive layer connected to a plurality of internal portions in a plurality of openings of the first resin layer, and the first conductive layer is the conductive layer electrically connected to the plurality of internal portions. Claim 16 A through-electrode substrate according to claim 14, wherein the at least one conductive layer comprises a plurality of first conductive layers each connected to the inner portion of a plurality of openings in the first resin layer, and the conductive layer electrically connected to the plurality of first conductive layers. Claim 17 A through electrode substrate according to any one of claims 1 to 6, 8 and 14 to 16, wherein a plurality of through electrodes are arranged in parallel at a first pitch in the plane direction of the first surface, and a plurality of through holes in which a plurality of internal parts included in one of the through electrodes are located are arranged in parallel at a second pitch in the plane direction of the first surface, and the ratio of the first pitch to the second pitch is 2.0 or greater. Claim 18 A through-electrode substrate according to claim 17, wherein the ratio of the first pitch to the second pitch is 5.0 or less. Claim 19 A through electrode substrate according to claim 17, wherein the through hole has a first dimension on the first surface, and the ratio of the second pitch to the first dimension is 1.5 or greater. Claim 20 In claim 19, the first dimension is a through-electrode substrate having a diameter of 50㎛ or more and 100㎛ or less. Claim 21 A mounting substrate having a through electrode substrate described in any one of claims 1 to 6, 8 and 14 to 16, and a plurality of elements electrically connected to the through electrodes of the through electrode substrate. Claim 22 A method for manufacturing a through-electrode substrate, comprising: a process of preparing a substrate including a first surface, a second surface located opposite to the first surface, and a through hole penetrating from the first surface to the second surface; and a process of forming a plurality of through electrodes extending from the first surface to the second surface through the through hole, wherein each of the plurality of through electrodes comprises a plurality of internal parts located inside the plurality of through holes, a first part located on the first surface and connected to the plurality of internal parts, and a second part located on the second surface and connected to the plurality of internal parts, wherein each of the first parts of the plurality of through electrodes has a contour that surrounds the plurality of through holes when viewed in a planar view. Claim 23 A method for manufacturing a through-electrode substrate, comprising: a process of preparing a substrate including a first surface, a second surface located opposite to the first surface, and a through hole penetrating from the first surface to the second surface; a process of forming a plurality of through electrodes extending from the first surface to the second surface through the through hole; and a process of forming a first wiring layer located on the first surface and comprising at least one insulating layer and at least one conductive layer, wherein each of the plurality of through electrodes comprises a plurality of internal portions located inside the plurality of through holes, and each of the plurality of internal portions is a field via, wherein the at least one insulating layer comprises a first resin layer located on the first surface, wherein the first resin layer comprises a plurality of openings, wherein each of the plurality of openings overlaps the internal portions when viewed in a planar view, and the first resin layer overlaps the boundary between the wall surface of the through hole and the internal portions when viewed in a planar view, and wherein the at least one conductive layer comprises a conductive layer electrically connected to the plurality of internal portions.

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