Phosphorus-containing passivator, perovskite solar cell, photovoltaic module, photovoltaic system and electrical apparatus

Abstract

As a phosphorus-containing passivating agent, perovskite solar cell, photovoltaic module, photovoltaic system, and electrical device; the phosphorus-containing passivating agent among these comprises an ionic compound, the ionic compound comprises a cation group, the cation group has a structure indicated by the chemical formula (I): ALB(I); where A represents an organophosphorus group having a lone pair of electrons, B represents an organophosphorus base having a positive charge, and L represents a linker between the organophosphorus group and the organophosphorus base. The lone pair of electrons of the organophosphorus group can passivate low-coordinate lead ion defects by forming a relatively strong P-Pb coordination bond with unsaturated coordinated lead ions in the bulk phase of the perovskite light absorption layer and / or at the upper and lower interfaces; the organophosphorus base can passivate the perovskite layer interfaces and inhibit ion migration by forming low-dimensional perovskites at the upper and lower interfaces of the perovskite layer; The photoelectric performance and stability of perovskite solar cells can be improved through the cooperative interaction of organic phosphorus groups and organic phosphorus bases.

Description

Technology Field

[0001] The present application cites Chinese patent application No. 202310708422.3, filed on June 14, 2023, titled 'Phosphorus-containing passivating agent, perovskite solar cell, photovoltaic power generation module, photovoltaic power generation system and electrical equipment', the entirety of which has been incorporated into the present application by reference.

[0002] The present application relates to the field of solar cell technology, and in particular to phosphorus-containing passivating agents, perovskite solar cells, photovoltaic power generation modules, photovoltaic power generation systems, and electrical equipment. Background Technology

[0003] Perovskite solar cells belong to the third generation of solar cells and have numerous features such as excellent photoelectric properties, high light absorption coefficient, long carrier lifetime, and long diffusion length, making them a leader among the new third-generation solar cells.

[0004] However, when perovskite solar cells are fabricated as thin films, a large number of defects exist in the bulk phase and on the surface, which are low-coordinated Pb in deep energy traps. 2+ , Pb cluster, low-coordinate halide ion, inversion defect PbI3 generated by ion migration - , halogen X of shallow energy defects - The presence of bulk defects, including vacancies and A-site cation vacancies, affects the photoelectric performance and stability of perovskite solar cells. The problem to be solved

[0005] This application is carried out in consideration of the above-mentioned problem, and its purpose includes providing a phosphorus-containing passivation agent, a perovskite solar cell, a photovoltaic power generation module, a photovoltaic power generation system, and an electrical device to improve the photoelectric performance and stability of a perovskite solar cell. means of solving the problem

[0006] The present application is realized through the following technical solution.

[0007] In the first aspect of the present application, a phosphorus-containing passivating agent comprises an ionic compound, wherein the ionic compound comprises a cation group; and the cation group has a structure indicated by the following chemical formula (I):

[0008] ALB

[0009] (I) having,

[0010] Here, A represents an organophosphorus group having a lone pair of electrons, B represents a positively charged organophosphorus base, and L represents a linker between the organophosphorus group and the organophosphorus base.

[0011] The phosphorus-containing passivating agent of the present application contains an organic phosphorus group having a lone pair of electrons and a positively charged organic phosphorus base, wherein the lone pair of electrons of the organic phosphorus group can passivate low-coordinate lead ion defects by forming a relatively strong P-Pb coordination bond with unsaturated coordinated lead ions in the bulk phase of the perovskite light absorption layer and / or at the upper and lower interfaces; and the organic phosphorus base can passivate the perovskite layer interfaces and inhibit ion migration by forming low-dimensional perovskites at the upper and lower interfaces of the perovskite layer; and thus, the photoelectric performance and stability of the perovskite solar cell can be improved through the cooperative action of the organic phosphorus group and the organic phosphorus base.

[0012] In some embodiments, the ionic compound further comprises an anionic group, wherein the anionic group comprises one or more of a halogen anion, a halogen-like anion, a tetrafluoroborate ion, a hexafluorophosphate ion, and a dimethylmethanesulfonamide ion. The halogen anion and the halogen-containing anionic group can passivate the vacancies of the iodide ion, respectively, and reduce energy loss.

[0013] In some embodiments, L comprises one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkane group and a substituted or unsubstituted arylene group.

[0014] In some embodiments, the phosphorus-containing passivating agent has the structure shown in the following formula (II):

[0015]

[0016] (II) has,

[0017] Here, R1, R2, R3, R4, and R5 comprise any one of a substituted or unsubstituted alkyl group, a substituted or unsubstituted naphthenic group, and a substituted or unsubstituted aryl group;

[0018] L comprises any one of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkane group, or a substituted or unsubstituted arylene group;

[0019] X comprises any one of a halogen anion and a halogen-containing anionic group;

[0020] 1≤n1≤4, 1≤n2≤10, 1≤n3≤4, and n1, n2, and n3 are integers.

[0021] In some embodiments, R1, R2, R3, R4, and R5 comprise any one of an alkyl group having 1 to 10 carbon atoms, a naphthenic group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group; and the substituent in the substituted phenyl group comprises one or more of a halogen, an alkyl group, a naphthenic group, an alkoxy group, a sulfane group, a silane group, and a siloxane group;

[0022] Optionally, the substituent in the substituted phenyl group comprises one or more of a halogen, an alkyl group having 1 to 10 carbon atoms, a naphthene group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a sulfane group having 1 to 10 carbon atoms, a silane group having 1 to 10 carbon atoms, and a siloxane group having 1 to 10 carbon atoms.

[0023] In some embodiments, R1 and R2 comprise any one of a naphthenic group and a phenyl group having 1 to 10 carbon atoms;

[0024] Optionally, the above R1 and the above R2 equally comprise any one of a naphthenic group and a phenyl group having 1 to 10 carbon atoms.

[0025] In some embodiments, R3, R4, and R5 comprise any one of an alkyl group having 1 to 10 carbon atoms;

[0026] Optionally, R3, R4, and R5 each comprise any one of alkyl groups having 1 to 10 carbon atoms.

[0027] In some embodiments, L comprises any one of an alkylene group having 1 to 10 carbon atoms, a cycloalkane group having 1 to 10 carbon atoms, a phenylene group, and a substituted phenylene group; and the substituent in the substituted phenylene group comprises one or more of a halogen, an alkyl group, a naphthene group, an alkoxy group, a sulfane group, a silane group, and a siloxane group;

[0028] Optionally, the substituent in the substituted phenylene group comprises one or more of a halogen, an alkyl group having 1 to 10 carbon atoms, a naphthene group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a sulfane group having 1 to 10 carbon atoms, a silane group having 1 to 10 carbon atoms, and a siloxane group having 1 to 10 carbon atoms.

[0029] In some embodiments, L comprises any one of an alkylene group having 1 to 10 carbon atoms.

[0030] In some embodiments, X comprises any one of iodide ions and tetrafluoroborate ions.

[0031] In some embodiments, the phosphorus-containing passivating agent has the following structural formula:

[0032] , , , , , , , , , , ,

[0033] , ,

[0034] , ,

[0035] , ,

[0036] Includes any one of them.

[0037] In the second aspect of the present application, a perovskite solar cell is included, and said perovskite solar cell comprises a phosphorus-containing passivating agent of the first aspect of the present application. A perovskite solar cell containing a phosphorus-containing passivating agent is obtained by manufacturing the perovskite solar cell by adding the phosphorus-containing passivating agent during the manufacturing process. Since the phosphorus-containing passivating agent modifies low-coordinate lead ion defects, interfacial defects, and iodide ion vacancy defects to passivate them, it reduces charge realization in the perovskite light absorption layer and / or energy loss at the interface, and improves the photoelectric performance and stability of the perovskite solar cell.

[0038] In some embodiments, the perovskite solar cell comprises a perovskite light absorption layer, and the perovskite light absorption layer comprises a phosphorus-containing passivating agent; when manufacturing the perovskite light absorption layer, the phosphorus-containing passivating agent is directly added to passivate low-coordinate lead ion defects, interfacial defects, and iodide ion vacancy defects of the perovskite light absorption layer.

[0039] Optionally, the mass ratio of the phosphorus-containing passivating agent in the perovskite light absorption layer is 0.01% to 1%; optionally, 0.05% to 0.5%. When the mass ratio of the phosphorus-containing passivating agent in the perovskite light absorption layer is within the above range, low-coordinate lead ion defects, interfacial defects, and iodide ion vacancy defects in the perovskite light absorption layer can be effectively passivated.

[0040] In some embodiments, the perovskite solar cell comprises a stacked perovskite light absorption layer and a passivation layer, wherein the passivation layer is located on the light input or light output side of the perovskite light absorption layer, and the passivation layer comprises the phosphorus-containing passivation agent; optionally, the thickness of the passivation layer is 0.1 nm to 10 nm; and optionally 1 nm to 10 nm.

[0041] A passivation layer can be formed on the upper or lower surface of the perovskite light absorption layer to passivate low-coordinate lead ion defects, interfacial defects, and iodide ion vacancy defects of the perovskite light absorption layer; when the thickness of the passivation layer is within the above range, low-coordinate lead ion defects, interfacial defects, and iodide ion vacancy defects of the perovskite light absorption layer can be effectively passivated.

[0042] In some embodiments, the perovskite light absorption layer comprises an active material having the molecular formula ABX3 or A2CDX6;

[0043] Optionally, the active material having the molecular formula ABX3 or A2CDX6 has at least one of the following features:

[0044] (1) A comprises one or more of organic cations and inorganic cations; optionally, A comprises a monovalent amidino cation, a monovalent amino cation and Cs + Includes one or more of the following;

[0045] (2) B comprises one or more of organic cations and inorganic cations; optionally, B is Pb 2+ and Sn 2+ Includes one or more of the following;

[0046] (3) C comprises one or more of organic cations and inorganic cations; optionally, C is Ag + Includes;

[0047] (4) D comprises one or more of organic cations and inorganic cations; optionally, D is Bi 3+ , Sb 3+ , and In 3+ Includes one or more of the following;

[0048] (5) X comprises one or more of organic anions and inorganic anions; optionally, X is Br - and I - Includes one or more of the following.

[0049] In some embodiments, the perovskite light absorption layer has at least one of the following features:

[0050] (1) The thickness of the perovskite light absorption layer is 100 nm to 1000 nm;

[0051] (2) The band gap width of the perovskite light absorption layer is 1.2 eV to 2.3 eV.

[0052] When the thickness of the perovskite light absorption layer is within the above range, it can effectively absorb sunlight to achieve optimal photoelectric conversion efficiency and stability. When the band gap width of the perovskite light absorption layer is within the above range, it can have higher visible light absorption efficiency.

[0053] In some embodiments, the perovskite solar cell further comprises an electron transport layer, a blocking layer, and an electrode layer located on the light-emitting side of the perovskite light-absorbing layer, wherein the electron transport layer, the blocking layer, and the electrode layer are sequentially stacked, and among them, the electron transport layer is closer to the perovskite light-absorbing layer;

[0054] Optionally, the material of the blocking layer comprises one or more of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, SnO2, ZnO, and cerium-containing oxides;

[0055] Optionally, the thickness of the blocking layer is 0.5 nm to 20 nm.

[0056] The blocking layer can effectively block the transport of holes and reduce energy loss due to charge recombination; when the blocking layer is manufactured using the above material, the blocking layer can have a lower valence band maximum value, thereby further enhancing the action of the blocking layer on the transport of holes; and when the thickness of the blocking layer is within the above range, it can effectively block holes without being too thick to affect electron transport.

[0057] In the third aspect of the present application, a photovoltaic power generation module is provided, comprising the perovskite solar cell of the second aspect of the present application. Since the perovskite solar cell has high photoelectric conversion efficiency and good stability, the photoelectric efficiency and stability of the photovoltaic power generation module can be improved.

[0058] In the fourth aspect of the present application, a photovoltaic power generation system is provided, comprising the photovoltaic power generation module of the third aspect of the present application. The photovoltaic power generation system directly converts solar radiation energy into electrical energy using a perovskite solar cell among the photovoltaic power generation modules, and has high efficiency and good stability.

[0059] In the fifth aspect of the present application, an electrical device is provided that includes the perovskite solar cell of the second aspect of the present application. Brief explanation of the drawing

[0060] To more clearly explain the technical solution of the present application, the drawings used in the present application are briefly introduced below. The drawings introduced below represent only some embodiments of the present application, and it is evident that a person skilled in the art can obtain other drawings based on these drawings without creative effort. FIG. 1 is a schematic diagram of the structure of a perovskite solar cell according to one embodiment of the present application. FIG. 2 is a schematic diagram of the structure of a perovskite solar cell according to one embodiment of the present application. FIG. 3 is a schematic diagram of the structure of a perovskite solar cell according to one embodiment of the present application. FIG. 4 is a schematic diagram of an electrical device using a perovskite solar cell as a power source according to one embodiment of the present application. Specific details for implementing the invention

[0061] To facilitate understanding of the present application, the application will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of the present application are provided in the drawings. However, the present application is not limited to the embodiments described herein and may be implemented in various forms. Conversely, the purpose of providing these embodiments is to make the understanding of the contents disclosed in the present application more thorough and comprehensive.

[0062] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as generally understood by a person skilled in the art to which this application pertains. The terms used in the specification of this application are merely for describing specific embodiments and are not intended to limit this application.

[0063] In this application, the technical features described as open include a closed technical solution composed of the listed features, and also include an open technical solution comprising the listed features.

[0064] For the sake of brevity, only certain numerical ranges are specifically disclosed in this specification. However, any lower limit may be combined with any upper limit to form an unspecified range, any lower limit may be combined with another lower limit to form an unspecified range, and likewise any upper limit may be combined with another upper limit to form an unspecified range. Additionally, each individually disclosed point or single numerical value itself may be used as a lower limit or an upper limit to be combined with another point or single numerical value, or combined with another lower limit or upper limit to form an unspecified range.

[0065] The 'range' disclosed in this application is limited in the form of a lower limit and an upper limit, and the given range is limited by the selection of one lower limit and one upper limit, and the selected lower limit and upper limit define the boundaries of a specific range. A range limited in this manner may include or not include boundary values, and may also be arbitrarily combined. That is, any lower limit may be combined with any upper limit to form a range. For example, if ranges of 60 to 120 and 80 to 110 are listed for a specific parameter, it can be understood that ranges of 60 to 110 and 80 to 120 are also expected. Furthermore, if minimum range values ​​1 and 2 and maximum range values ​​3, 4 and 5 are listed, ranges of 1 to 3, 1 to 4, 1 to 5, 2 to 3, 2 to 4, and 2 to 5 can all be expected. In this application, unless otherwise noted, the numeric range 'a to b' represents an abbreviated expression of any combination of real numbers from a to b, where a and b are real numbers. For example, the numeric range '0 to 5' indicates that all real numbers between '0 to 5' are listed herein, and '0 to 5' is an abbreviated expression of such combination of numbers. Additionally, if a specific parameter is expressed as an integer ≥ 2, it is equivalent to disclosing that this parameter is an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0066] In this application, when a numerical range is referred to, unless otherwise specified, said numerical range is to be considered continuous and includes the minimum and maximum values ​​of the range, and all values ​​between the minimum and maximum values. Furthermore, if the range represents an integer, it includes all integers between the minimum and maximum values ​​of the range. Additionally, when multiple ranges are provided to describe a feature or characteristic, these ranges may be merged. In other words, unless otherwise specified, all ranges disclosed in this specification should be understood to include all sub-ranges included therein.

[0067] Unless otherwise specified, all embodiments and optional embodiments of the present application may be combined with one another to form a new technical solution.

[0068] Unless otherwise specified, all technical features and optional technical features of the present application may be combined with one another to form a new technical solution.

[0069] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, but sequentially is preferred. For example, if the method comprises steps (a) and (b), it indicates that the method may comprise steps (a) and (b) performed sequentially, or steps (b) and (a) performed sequentially. For example, if the method further comprises step (c), it indicates that step (c) may be added to the method in any order. For example, the method may comprise steps (a), (b), and (c), steps (a), (c), and (b), or steps (c), (a), and (b), etc.

[0070] Unless otherwise specified, the term "comprising" as used in this application indicates an open or closed form. For example, the term "comprising" may indicate that other unlisted components are included, or that only the listed components are included.

[0071] Unless otherwise specified, it should be noted that in the description of this specification, 'more than' and 'less than or equal to' include a reference number, and 'more than' in 'one or more' means two and two or more.

[0072] Unless otherwise specified, the term 'or' in the description of this specification is inclusive. That is, the phrase 'A or B' indicates 'A, B, or A and B'. More specifically, any of the following conditions satisfy the condition 'A or B': A being true (or present) and B being false (or absent); A being false (or absent) and B being true (or present); or A and B being both true (or present). Unless otherwise specified, terms used in this application have the known meanings generally understood by those skilled in the art. Unless otherwise specified, the numerical value of each parameter mentioned in this application may be measured by various measurement methods frequently used in the art (e.g., may be measured by the methods given in the embodiments of this application).

[0073] In related technologies, when fabricating perovskite solar cells as thin films, a large number of defects are generated in the bulk phase and on the surface. The presence of these defects affects the photoelectric performance and stability of perovskite solar cells, and passivation defects are a problem that must be urgently solved when manufacturing perovskite solar cells.

[0074] Currently, methods to compensate for these defects can be mainly divided into Lewis acid, Lewis base, anion, and cation passivation, and most of the Lewis base passivation agents reported previously are molecules or ions containing atoms such as nitrogen, sulfur, and oxygen, and their passivation effect is limited.

[0075] Based on the above problem, the first aspect of the present application provides a phosphorus-containing passivating agent, wherein the phosphorus-containing passivating agent comprises an ionic compound, the ionic compound comprises a cation group, and the cation group has a structure indicated by the following chemical formula (I):

[0076] ALB

[0077] (I) having,

[0078] Here, A represents an organophosphorus group having a lone pair of electrons, B represents a positively charged organophosphorus base, and L represents a linker between the organophosphorus group and the organophosphorus base.

[0079] It should be noted that the number of organophosphorus groups contained in the cation group may be one or many and can be set according to actual demand; and the number of organophosphorus bases contained in the cation group may be one or many and can be set according to actual demand. The organophosphorus bases may carry one positive charge or multiple positive charges.

[0080] The organic phosphorus group and the organic phosphorus base in the cation are connected through the L group.

[0081] Phosphorus-containing passivating agents contain an organic phosphorus group having a lone pair of electrons and a positively charged organic phosphorus base, wherein the lone pair of electrons of the organic phosphorus group can passivate low-coordinate lead ion defects by forming a relatively strong P-Pb coordination bond with unsaturated coordinated lead ions in the bulk phase of the perovskite light absorption layer and / or at the upper and lower interfaces; and the organic phosphorus base can passivate the perovskite layer interfaces and inhibit ion migration by forming low-dimensional perovskites at the upper and lower interfaces of the perovskite layer. Therefore, it can be understood that the photoelectric performance and stability of perovskite solar cells can be improved through the cooperative action of the organic phosphorus group and the organic phosphorus base.

[0082] In some embodiments, the ionic compound further comprises an anionic group, said anionic group comprising one or more of a halogen anion, a halogen-like anion, a tetrafluoroborate ion, a hexafluorophosphate ion, and a dimethylmethanesulfonamide ion. The halogen anion and the halogen-containing anionic group can passivate the vacancies of the iodide ion, respectively, and reduce energy loss.

[0083] It should be noted that a halogen anion refers to an anion formed after gaining one electron from a halogen element. A halogen-containing anionic group refers to an anionic group jointly formed by a halogen element and other elements.

[0084] The organic phosphorus group, organic phosphorus base, and halogen anion and / or halogen-containing anion group contained in the ionic compound of the present application passivate low-coordinate lead ion defects, interfacial defects, and iodide ion vacancy defects by coordinating them, thereby reducing charge realization in the perovskite light absorption layer and / or energy loss at the interface, and improving the photoelectric performance and stability of the perovskite solar cell.

[0085] In some embodiments, L comprises one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkane group and a substituted or unsubstituted arylene group.

[0086] An alkylene group refers to a hydrocarbon group formed by removing one hydrogen atom from an alkyl group to form two monovalent group centers, and this may be a saturated branched alkyl group or a saturated straight-chain alkyl group. For example, 'C1-C9 alkylene group' means that the alkyl group portion contains 1 to 9 carbon atoms, and each time it appears, it may be a C1 alkylene group, a C4 alkylene group, a C5 alkylene group, a C6 alkylene group, a C7 alkylene group, a C8 alkylene group, or a C9 alkylene group independently of each other. Suitable examples include, but are not limited to, methylene groups (-CH2-), 1,1-ethylidene groups (-CH(CH3)-), 1,2-ethylene groups (-CH2CH2-), 1,1-propylidene groups (-CH(CH2CH3)-), 1,2-propylene groups (-CH2CH(CH3)-), 1,3-propylene groups (-CH2CH2CH2-) and 1,4-butylene groups (-CH2CH2CH2CH2-).

[0087] A cycloalkane group refers to a non-aromatic hydrocarbon containing a cyclic carbon atom with two monovalent groups, derived by removing one hydrogen atom from a naphthene group, and may be a monocycloalkane group, a spirocycloalkane group, or a bridge cycloalkane group. In phrases containing this term, for example, 'C3-C9 cycloalkane group' refers to a cycloalkane group containing 3 to 9 carbon atoms, and each time it appears, it may be a cyclopropane group, a cyclobutane group, a cyclofentanyl group, a cyclohexylene group, a cycloheptylene group, an asiatic cycloalkane group, or a nonylalkyl group, independently of each other. Additionally, a cycloalkane group may contain one or more double bonds, and representative examples of cycloalkane groups containing double bonds include a cyclopentenylidene group, a cyclohexylidene group, a cyclohexadiene group, and a cyclobutadiene group.

[0088] An arylene group refers to an aromatic hydrocarbon group formed by removing two hydrogen atoms from an aromatic ring compound, and it can be a monocyclic arylene group, a polycyclic arylene group, or a polycyclic arylene group; in the case of a polycyclic ring species, at least one is an aromatic ring system. For example, 'C6~C 20 'Arylene group' refers to an arylene group containing 6 to 20 carbon atoms, and each time it appears, independently of each other, C6 arylene group, C 10 Aryllene group, C 14 Aryllene group, C 18 arylene group or C 20 It could be an arylengi.

[0089] In one possible embodiment, the phosphorus-containing passivating agent has the structure shown in the following formula (II):

[0090]

[0091] (II) has,

[0092] Here, R1, R2, R3, R4, and R5 comprise any one of a substituted or unsubstituted alkyl group, a substituted or unsubstituted naphthenic group, and a substituted or unsubstituted aryl group;

[0093] L comprises any one of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkane group, or a substituted or unsubstituted arylene group;

[0094] X comprises any one of a halogen anion and a halogen-containing anionic group;

[0095] 1≤n1≤4, 1≤n2≤10, 1≤n3≤4, and n1, n2, and n3 are integers.

[0096] It should be noted that R1, R2, R3, R4, and R5 each contain any one of a substituted or unsubstituted alkyl group, a substituted or unsubstituted naphthenic group, and a substituted or unsubstituted aryl group. n1, n2, and n3 are each integers.

[0097] An alkyl group means a primary (positive) carbon atom, or a secondary carbon atom, or a tertiary carbon atom, or a quaternary carbon atom, or a combination thereof, of which saturated hydrocarbons. In phrases containing this term, for example, 'C1-C9 alkyl group' means an alkyl group containing 1 to 9 carbon atoms, and each time it appears, it may be a C1 alkyl group, a C2 alkyl group, a C3 alkyl group, a C4 alkyl group, a C5 alkyl group, a C6 alkyl group, a C7 alkyl group, a C8 alkyl group, or a C9 alkyl group independently of each other.

[0098] A naphthene group refers to a non-aromatic hydrocarbon containing a cyclic carbon atom, and may be a mononaphthene group, a spironaphthene group, or a bridgenaphthene group. In phrases containing this term, for example, 'C3-C9 naphthene group' refers to a naphthene group containing 3 to 9 carbon atoms, and each time it appears, it may be a C3 naphthene group, a C4 naphthene group, a C5 naphthene group, a C6 naphthene group, a C7 naphthene group, a C8 naphthene group, or a C9 naphthene group independently of each other. Suitable examples include, but are not limited to, cyclopropyl groups, cyclobutyl groups, cyclopentyl groups, cyclohexyl groups, and cycloheptyl groups. Additionally, a 'naphthene group' may further contain one or more double bonds, and representative examples of naphthene groups containing double bonds include cyclopentene groups, cyclohexenyl groups, cyclohexadienyl groups, and cyclobutadienyl groups.

[0099] An aryl group refers to an aromatic hydrocarbon group derived by removing one hydrogen atom from an aromatic compound; it can be a monocyclic aryl group, a polycyclic aryl group, or a polycyclic aryl group, and in the case of a polycyclic cyclic species, it is at least one aromatic ring system. For example, 'C6~C 20 'Aryl group' refers to an aryl group containing 6 to 20 carbon atoms, and each time it appears, independently of each other, C6 aryl group, C 10 Arylgi, C 14 Arylgi, C 18 aryl group or C 20 It may be an aryl group. Suitable examples include, but are not limited to, benzene, diphenyl, naphthalene, anthracene, phenanthrene, perylene, triphenylene, and their derivatives.

[0100] It should be noted that 'substituted or unsubstituted' indicates that the defined group may be substituted or unsubstituted. When the defined group is substituted, it should be understood that it is substituted with any group that is optionally permitted in the art, including but not limited to alkyl groups, alkoxy groups, alkenyl groups, alkynyl groups, aryl groups, heteroaryl groups, heteroalkylene groups, heterocyclic groups, amino groups, and halogens.

[0101] In some embodiments, R1, R2, R3, R4, and R5 comprise any one of an alkyl group having 1 to 10 carbon atoms, a naphthenic group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group; and the substituent in the substituted phenyl group comprises one or more of a halogen, an alkyl group, a naphthenic group, an alkoxy group, a sulfane group, a silane group, and a siloxane group.

[0102] It should be noted that R1, R2, R3, R4, and R5 each contain any one of an alkyl group having 1 to 10 carbon atoms, a naphthenic group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group.

[0103] In some optional embodiments, the substituent in the substituted phenyl group comprises one or more of a halogen, an alkyl group having 1 to 10 carbon atoms, a naphthenic group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a sulfane group having 1 to 10 carbon atoms, a silane group having 1 to 10 carbon atoms, and a siloxane group having 1 to 10 carbon atoms.

[0104] An alkoxy group refers to a group having an -O-alkyl group, that is, the alkyl group is connected to the parent structure through an oxygen atom. In phrases containing this term, for example, 'C1-C9 alkoxy group' means that the alkyl group portion contains 1 to 9 carbon atoms, and each time it appears, it may be a C1 alkoxy group, a C4 alkoxy group, a C5 alkoxy group, a C6 alkoxy group, a C7 alkoxy group, a C8 alkoxy group, or a C9 alkoxy group independently of each other. Suitable examples include, but are not limited to, methoxy groups (-O-CH3 or -OMe), ethoxy groups (-O-CH2CH3 or -OEt), and tert-butoxy groups (-OC(CH3)3 or -OtBu).

[0105] A sulfane group means that at least one carbon atom is replaced by a sulfur element based on an alkyl group, and the alkyl group is connected to the core structure through the sulfur atom.

[0106] A silane group is based on an alkyl group in which at least one carbon atom is replaced by a silicon atom, and the alkyl group is connected to the core structure through the silicon atom.

[0107] A siloxane group is based on an alkyl group and means that at least one carbon atom is replaced by a silicon atom, and an alkoxy group is connected to the core structure through a silicon atom.

[0108] In some embodiments, R1 and R2 comprise any one of a naphthenic group and a phenyl group having 1 to 10 carbon atoms.

[0109] It should be noted that R1 and R2 each contain any one of a naphthenic group and a phenyl group having 1 to 10 carbon atoms.

[0110] In some optional embodiments, R1 and R2 equally comprise any one of a naphthenic group and a phenyl group having 1 to 10 carbon atoms.

[0111] In some embodiments, R3, R4, and R5 comprise any one of alkyl groups having 1 to 10 carbon atoms.

[0112] It should be noted that R3, R4, and R5 each contain any one of the alkyl groups having 1 to 10 carbon atoms.

[0113] In some optional embodiments, R3, R4, and R5 equally comprise any one of alkyl groups having 1 to 10 carbon atoms.

[0114] In one possible embodiment, L comprises any one of an alkylene group having 1 to 10 carbon atoms, a cycloalkane group having 1 to 10 carbon atoms, a phenylene group, and a substituted phenylene group; and the substituent in the substituted phenylene group comprises one or more of a halogen, an alkyl group, a naphthene group, an alkoxy group, a sulfane group, a silane group, and a siloxane group.

[0115] In some optional embodiments, the substituent in the substituted phenylene group comprises one or more of a halogen, an alkyl group having 1 to 10 carbon atoms, a naphthene group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a sulfane group having 1 to 10 carbon atoms, a silane group having 1 to 10 carbon atoms, and a siloxane group having 1 to 10 carbon atoms.

[0116] In some embodiments, L comprises any one of alkylene groups having 1 to 10 carbon atoms.

[0117] In some embodiments, X comprises any one of iodide ions and tetrafluoroborate ions.

[0118] In some embodiments, the phosphorus-containing passivating agent has the following M1 to M18 structural formulas:

[0119] , , , , , , , , , , ,

[0120] , ,

[0121] , ,

[0122] , ,

[0123] Includes any one of them.

[0124] In a second aspect of the present application, a perovskite solar cell is provided, comprising the phosphorus-containing passivating agent of the first aspect of the present application. A perovskite solar cell containing the phosphorus-containing passivating agent is obtained by manufacturing the perovskite solar cell by adding the phosphorus-containing passivating agent during the manufacturing process. Since the phosphorus-containing passivating agent modifies low-coordinate lead ion defects, interfacial defects, and iodide ion vacancy defects to passivate them, the realization of charge in the perovskite light-absorbing layer and / or energy loss at the interface is reduced, and the photoelectric performance and stability of the perovskite solar cell are improved.

[0125] In some embodiments, the perovskite solar cell comprises a perovskite light absorption layer, and the perovskite light absorption layer comprises the phosphorus-containing passivating agent; when manufacturing the perovskite light absorption layer, the phosphorus-containing passivating agent is directly added to passivate low-coordinate lead ion defects, interfacial defects, and iodide ion vacancy defects of the perovskite light absorption layer.

[0126] In some optional embodiments, the mass ratio of the phosphorus-containing passivating agent in the perovskite light absorption layer is 0.01% to 1%; as an example, the mass ratio of the phosphorus-containing passivating agent in the perovskite light absorption layer may be 0.01%, 0.05%, 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.35%, 0.4%, 0.45%, 0.5%, 0.55%, 0.6%, 0.65%, 0.7%, 0.75%, 0.8%, 0.85%, 0.9%, 0.95%, 1% and a range between any two of the above values, but is not limited thereto. When the mass ratio of the phosphorus-containing passivating agent in the perovskite light absorption layer is within the above range, low-coordinate lead ion defects, interfacial defects, and iodide ion vacancy defects in the perovskite light absorption layer can be effectively passivated. Optionally, the mass ratio of the phosphorus-containing passivating agent in the perovskite light absorption layer is 0.05% to 0.5%.

[0127] As an example, the mass ratio of the phosphorus-containing passivating agent in the aforementioned perovskite light-absorbing layer can be measured using the following method. A perovskite light-absorbing layer powder is obtained, and the phosphorus element content of the light-absorbing layer is measured through elemental analysis.

[0128] In some embodiments, the perovskite solar cell comprises a stacked perovskite light absorption layer and a passivation layer, wherein the passivation layer is located on the light input or light output side of the perovskite light absorption layer and the passivation layer comprises a phosphorus-containing passivating agent. By forming a passivation layer on the upper or lower surface of the perovskite light absorption layer, low-coordinate lead ion defects, interfacial defects, and iodide ion vacancy defects of the perovskite light absorption layer can be passivated.

[0129] It should be noted that the light-input side refers to the side where sunlight is incident on the perovskite light-absorbing layer, and the light-output side refers to the side where sunlight is emitted from the perovskite light-absorbing layer.

[0130] In some optional embodiments, the thickness of the passivation layer is 0.1 nanometer to 10 nanometers (nm); as an example, the thickness of the passivation layer may be 0.1 nm, 0.5 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a range between any two of the above values, but is not limited thereto. When the thickness of the passivation layer is within the above range, low-coordinate lead ion defects, interfacial defects, and iodide ion vacancy defects of the perovskite light absorption layer can be effectively passivated. Optionally, the thickness of the passivation layer is 1 nm to 10 nm.

[0131] As an example, the thickness of the passivation layer mentioned above can be measured using measuring instruments such as an ellipsometer or an atomic force microscope.

[0132] In some embodiments, the perovskite light absorption layer comprises an active material having the molecular formula ABX3 or A2CDX6.

[0133] Optionally, A comprises one or more of organic cations and inorganic cations; further optionally, A comprises a monovalent amidino cation, a monovalent amino cation, and Cs + Includes one or more of them.

[0134] Optionally, B comprises one or more of organic cations and inorganic cations; further optionally, B comprises Pb 2+ and Sn 2+ Includes one or more of them.

[0135] Optionally, C comprises one or more of organic cations and inorganic cations; further optionally, C comprises Ag + Includes

[0136] Optionally, D comprises one or more of organic cations and inorganic cations; furthermore, optionally, D is Bi 3+ , Sb 3+ , and In3+ Includes one or more of them.

[0137] Optionally, X comprises one or more of organic anions and inorganic anions; further optionally, X comprises Br - and I - Includes one or more of them.

[0138] In some embodiments, the thickness of the perovskite light absorption layer is 100 nm to 1000 nm; as an example, the thickness of the perovskite light absorption layer may be 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or a range between any two of the above values, but is not limited thereto. When the thickness of the perovskite light absorption layer is within the above range, sunlight can be effectively absorbed to achieve optimal photoelectric conversion efficiency and stability.

[0139] As an example, the thickness of the perovskite light absorption layer mentioned above can be measured using measuring instruments such as an ellipsometer or an atomic force microscope.

[0140] In some embodiments, the band gap width of the perovskite light absorption layer is 1.2 electron volts to 2.3 electron volts (eV). As an example, the band gap width of the perovskite light absorption layer may be 1.2 eV, 1.3 eV, 1.4 eV, 1.5 eV, 1.6 eV, 1.7 eV, 1.8 eV, 1.9 eV, 2 eV, 2.1 eV, 2.2 eV, 2.3 eV, or a range between any two of the above values, but is not limited thereto. When the band gap width of the perovskite light absorption layer is within the above range, it may have a higher visible light absorption efficiency.

[0141] As an example, the band gap width of the perovskite light-absorbing layer mentioned above can be measured using the following method. The absorption spectrum of the perovskite light-absorbing layer is measured using an ultraviolet-visible photometer, and the emission spectrum of the perovskite light-absorbing layer is measured using a photoluminescence fluorescence analyzer, and the band gap width of the perovskite light-absorbing layer can be calculated through the intersection of the absorption spectrum and the emission spectrum.

[0142] In some embodiments, the perovskite solar cell further comprises a transparent conductive substrate, an electron transport layer, a hole transport layer, and an electrode layer; the transparent conductive substrate, the electron transport layer, the perovskite light absorption layer, the hole transport layer, and the electrode layer are sequentially stacked to form a standard component structure, and the perovskite light absorption layer comprises a phosphorus-containing passivating agent.

[0143] In some embodiments, the perovskite solar cell further comprises a transparent conductive substrate, an electron transport layer, a hole transport layer, and an electrode layer; the transparent conductive substrate, the hole transport layer, the perovskite light absorption layer, the electron transport layer, and the electrode layer are sequentially stacked to form a trans component structure, and the perovskite light absorption layer comprises a phosphorus-containing passivating agent.

[0144] Figure 1 is a schematic diagram of the structure of a perovskite solar cell, wherein 11 represents a transparent conductive substrate, 12 represents an electron transport layer or a hole transport layer, 13 represents a perovskite light absorption layer, 14 represents a hole transport layer or an electron transport layer, and 15 represents an electrode layer. When 12 represents an electron transport layer and 14 represents a hole transport layer, the transparent conductive substrate, the electron transport layer, the perovskite light absorption layer, the hole transport layer, and the electrode layer are sequentially stacked to form a standard component structure, and the perovskite light absorption layer contains a phosphorus-containing passivating agent. When 12 represents a hole transport layer and 14 represents an electron transport layer, a transparent conductive substrate, a hole transport layer, a perovskite light absorption layer, an electron transport layer, and an electrode layer are sequentially stacked to form a transformer component structure, and the perovskite light absorption layer contains a phosphorus-containing passivating agent.

[0145] In some embodiments, the perovskite solar cell further comprises a transparent conductive substrate, an electron transport layer, a hole transport layer, and an electrode layer; the transparent conductive substrate, the electron transport layer, the passivation layer, the perovskite light absorption layer, the hole transport layer, and the electrode layer are sequentially stacked to form a standard component structure, and the passivation layer contains a phosphorus-containing passivating agent.

[0146] In some embodiments, the perovskite solar cell further comprises a transparent conductive substrate, an electron transport layer, a hole transport layer, and an electrode layer; the transparent conductive substrate, the electron transport layer, the perovskite light absorption layer, the passivation layer, the hole transport layer, and the electrode layer are sequentially stacked to form a standard component structure, and the passivation layer contains a phosphorus-containing passivating agent.

[0147] Figure 2 illustrates a schematic diagram of the structure of a perovskite solar cell, wherein 21 represents a transparent conductive substrate, 22 represents an electron transport layer, 23 represents a passivation layer or a perovskite light absorption layer, 24 represents a perovskite light absorption layer or a passivation layer, 25 represents a hole transport layer, and 26 represents an electrode layer. When 23 represents a passivation layer and 24 represents a perovskite light absorption layer, the transparent conductive substrate, electron transport layer, passivation layer, perovskite light absorption layer, hole transport layer, and electrode layer are sequentially stacked to form a standard component structure, and the passivation layer contains a phosphorus-containing passivation agent. When 23 represents a perovskite light absorption layer and 24 represents a passivation layer, a transparent conductive substrate, an electron transport layer, a perovskite light absorption layer, a passivation layer, a hole transport layer, and an electrode layer are sequentially stacked to form a standard component structure, and the passivation layer contains a phosphorus-containing passivation agent.

[0148] In some embodiments, the perovskite solar cell comprises an electron transport layer, a blocking layer, and an electrode layer located on the light-emitting side of the perovskite light-absorbing layer, wherein the electron transport layer, the blocking layer, and the electrode layer are sequentially stacked, and among them, the electron transport layer is closer to the perovskite light-absorbing layer. The blocking layer effectively blocks the transport of holes and can reduce energy loss due to charge recombination.

[0149] In some optional embodiments, the material of the blocking layer comprises one or more of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), SnO2, ZnO, and cerium-containing oxides. When the blocking layer is manufactured using the above material, the blocking layer may have a lower valence band maximum, which can further enhance the action of the blocking layer on hole transport.

[0150] In some optional embodiments, the thickness of the blocking layer is 0.5 nm to 20 nm. As an example, the thickness of the blocking layer may be 0.50 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, or a range between any two of the above values, but is not limited thereto. When the thickness of the blocking layer is within the above range, holes can be effectively blocked without being too thick to affect electron transport.

[0151] As an example, the thickness of the blocking layer mentioned above can be measured using measuring instruments such as an ellipsometer or an atomic force microscope.

[0152] In some embodiments, the perovskite solar cell comprises a transparent conductive substrate, a hole transport layer, a passivation layer, a perovskite light absorption layer, an electron transport layer, a blocking layer, and an electrode layer installed in a sequential stacked manner; the passivation layer contains a phosphorus-containing passivation agent.

[0153] In some embodiments, the perovskite solar cell comprises a transparent conductive substrate, a hole transport layer, a perovskite light absorption layer, a passivation layer, an electron transport layer, a blocking layer, and an electrode layer installed in a sequential stacked manner; the passivation layer contains a phosphorus-containing passivation agent.

[0154] Figure 3 illustrates a schematic diagram of the structure of a perovskite solar cell, wherein 31 represents a transparent conductive substrate, 32 represents a hole transport layer, 33 represents a passivation layer or a perovskite light absorption layer, 34 represents a perovskite light absorption layer or a passivation layer, 35 represents an electron transport layer, 36 represents a blocking layer, and 37 represents an electrode layer. When 33 represents a passivation layer and 34 represents a perovskite light absorption layer, the transparent conductive substrate, hole transport layer, passivation layer, perovskite light absorption layer, electron transport layer, blocking layer, and electrode layer are sequentially stacked to form a transformer component structure, and the passivation layer contains a phosphorus-containing passivation agent. When 33 represents a perovskite light absorption layer and 34 represents a passivation layer, a transparent conductive substrate, a hole transport layer, a perovskite light absorption layer, a passivation layer, an electron transport layer, a blocking layer, and an electrode layer are sequentially stacked to form a transformer component structure, and the passivation layer contains a phosphorus-containing passivation agent.

[0155] A transparent conductive substrate is used for incident light. In some embodiments, the transparent conductive substrate comprises a substrate and a conductive material layer; the conductive material layer is located on one side of the substrate close to a perovskite light absorption layer.

[0156] In some of the embodiments, the conductive material of the conductive material layer comprises one or more of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), and indium-doped zinc oxide (IZO).

[0157] In some embodiments thereof, the thickness of the transparent conductive substrate is 10 nm to 1000 nm; when the thickness of the transparent conductive substrate is within the above range, its conductive ability can be increased while ensuring light transmittance. As an example, the thickness of the transparent conductive substrate may include, but is not limited to, a range consisting of 10 nm, 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or any two of the above values.

[0158] In this application, the substrate includes, but is not limited to, a glass substrate or a flexible substrate, and the material of the flexible substrate may be, for example (but is not limited to), an organic polymer material. Furthermore, one or more of the following materials may be mixed in different proportions, including, but not limited to, polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc.

[0159] The electron transport layer can extract and transport electron carriers and block the passage of free holes. In some embodiments, the material used in the electron transport layer is TiO2, ZnO, SnO2, [6,6]-phenyl group C 61 Methyl butyrate (PC 61 BM), [6,6]-phenyl group C 71 Methyl butyrate (PC 71 BM), Fullerene C 60 (C 60 ), Fullerene C 70 (C 70 It includes one or more of the following: naphthalenediimide (NDI) type materials, perylenediimide (PDI) type materials, and derivatives, mixtures, passivated materials, and mixed passivated materials.

[0160] In some embodiments, the thickness of the electron transport layer is 5 nm to 100 nm. As an example, the thickness of the electron transport layer may include, but is not limited to, a range consisting of 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or any two of the above values. When the thickness of the electron transport layer is within the above range, the electron transport effect can be optimized.

[0161] The hole transport layer can extract and transport hole carriers and block the passage of free electrons. In some embodiments, the material used in the hole transport layer comprises one or more of metal oxides, polymers, small molecules, and derivatives, mixtures, passivates, and mixed passivates of said materials. Optionally, the metal oxide comprises one or more of nickel oxide, molybdenum oxide, and tungsten oxide. Optionally, the polymer comprises one or more of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), and poly[bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD). Optionally, the small molecule comprises one or more of 4-(3,6-dimethylcarbazole-9-yl)butylphosphonic acid (Me-4PACZ), 2-(3,6-dimethoxycarbazole-9-yl)ethylphosphonic acid (MeO-2PACZ), and 4-(carbazole-9-yl)butylphosphonic acid (4PACZ).

[0162] In some embodiments, the thickness of the hole transport layer is 0.1 nm to 100 nm. As an example, the thickness of the hole transport layer may include, but is not limited to, a range consisting of 0.1 nm, 1 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or any two of the above values. When the thickness of the hole transport layer is within the above range, the hole transport effect can be optimized.

[0163] In some embodiments, the material of the electrode layer comprises one or more of an organic conductive material and an inorganic conductive material; optionally, the material used in the electrode layer comprises one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide.

[0164] In some possible embodiments, the thickness of the electrode layer is 10 nm to 1000 nm; when the thickness of the electrode layer is within the above range, the charge collection effect can be optimized. As an example, the thickness of the electrode layer may include, but is not limited to, a range consisting of 10 nm, 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or any two of the above values.

[0165] When a perovskite solar cell is in operation, the perovskite light-absorbing layer receives light, and internal electrons gain energy and escape from the confinement of the perovskite light-absorbing layer to form negatively charged electron carriers and simultaneously form positively charged hole carriers to obtain electron-hole pairs. The free electrons and free holes are transported in opposite directions through the corresponding transport layer, causing electrons and holes to flow and forming an external current to convert light energy into electrical energy. Furthermore, when the perovskite light-absorbing layer absorbs photons, it is stimulated to generate electron-hole pairs, and the electron-hole pairs further dissociate to form oppositely charged free carriers. Among them, the free electrons are transported to the positive electrode through the electron transport layer, and the free holes are transported to the negative electrode through the hole transport layer. The two free carriers are collected by their respective electrodes and further form a photocurrent in the circuit of the perovskite solar cell.

[0166] It can be understood that one of the transparent conductive substrates and electrode layers is an anode capable of collecting electron carriers transported through the electron transport layer, and the other is a cathode capable of collecting hole carriers transported through the hole transport layer.

[0167] In some embodiments, a method for manufacturing a perovskite solar cell comprises: a step of manufacturing an electron transport layer on one side having a conductive material layer of a transparent conductive substrate; a step of manufacturing a perovskite light absorption layer on one side far from the electron transport layer and the transparent conductive substrate - the perovskite light absorption layer contains a phosphorus-containing passivating agent -; a step of manufacturing a hole transport layer on one side far from the electron transport layer of the perovskite light absorption layer; and a step of manufacturing an electrode layer on one side far from the perovskite light absorption layer of the hole transport layer. A formal component structure is made using this method.

[0168] In some embodiments, a method for manufacturing a perovskite solar cell comprises: a step of manufacturing a hole transport layer on one side having a conductive material layer of a transparent conductive substrate; a step of manufacturing a perovskite light absorption layer on one side far from the transparent conductive substrate of the hole transport layer - the perovskite light absorption layer contains a phosphorus-containing passivating agent -; a step of manufacturing an electron transport layer on one side far from the hole transport layer of the perovskite light absorption layer; and a step of manufacturing an electrode layer on one side far from the perovskite light absorption layer of the electron transport layer. A transformer component structure is made using this method.

[0169] In some embodiments, a method for manufacturing a perovskite solar cell comprises: a step of manufacturing an electron transport layer on one side having a conductive material layer of a transparent conductive substrate; a step of manufacturing a passivation layer on one side far from the transparent conductive substrate of the electron transport layer - the passivation layer contains a phosphorus-containing passivation agent -; a step of manufacturing a perovskite light absorption layer on one side far from the electron transport layer of the passivation layer; a step of manufacturing a hole transport layer on one side far from the passivation layer of the perovskite light absorption layer; and a step of manufacturing an electrode layer on one side far from the perovskite light absorption layer of the hole transport layer. A formal component structure is made using this method.

[0170] In some embodiments, a method for manufacturing a perovskite solar cell comprises: a step of manufacturing an electron transport layer on one side having a conductive material layer of a transparent conductive substrate; a step of manufacturing a perovskite light absorption layer on one side far from the transparent conductive substrate of the electron transport layer; a step of manufacturing a passivation layer on one side far from the electron transport layer of the perovskite light absorption layer - the passivation layer contains a phosphorus-containing passivating agent -; a step of manufacturing a hole transport layer on one side far from the perovskite light absorption layer of the passivation layer; and a step of manufacturing an electrode layer on one side far from the passivation layer of the hole transport layer. A formal component structure is made using this method.

[0171] In some embodiments, a method for manufacturing a perovskite solar cell comprises: a step of manufacturing a hole transport layer on one side having a conductive material layer of a transparent conductive substrate; a step of manufacturing a passivation layer on one side far from the transparent conductive substrate of the hole transport layer - the passivation layer contains a phosphorus-containing passivation agent -; a step of manufacturing a perovskite light absorption layer on one side far from the hole transport layer of the passivation layer; a step of manufacturing an electron transport layer on one side far from the passivation layer of the perovskite light absorption layer; a step of manufacturing a blocking layer on one side far from the perovskite light absorption layer of the electron transport layer; and a step of manufacturing an electrode layer on one side far from the electron transport layer of the blocking layer. A transformer component structure is made using this method.

[0172] In some embodiments, a method for manufacturing a perovskite solar cell comprises: a step of manufacturing a hole transport layer on one side having a conductive material layer of a transparent conductive substrate; a step of manufacturing a perovskite light absorption layer on one side far from the transparent conductive substrate of the hole transport layer; a step of manufacturing a passivation layer on one side far from the hole transport layer of the perovskite light absorption layer - the passivation layer contains a phosphorus-containing passivation agent -; a step of manufacturing an electron transport layer on one side far from the perovskite light absorption layer of the passivation layer; a step of manufacturing a blocking layer on one side far from the perovskite light absorption layer of the electron transport layer; and a step of manufacturing an electrode layer on one side far from the electron transport layer of the blocking layer. A transformer component structure is made using this method.

[0173] In some of the embodiments, a passivation layer can be manufactured using one of spin coating, spray coating, blade coating, slot coating, and roll-to-roll printing.

[0174] In some embodiments thereof, when preparing a passivation layer, the method comprises the step of preparing a passivation layer solution, wherein the solvent used when preparing the passivation layer solution comprises one or more of water, methyl alcohol, ethyl alcohol, isopropyl alcohol, N,N-dimethylformamide, dimethyl sulfoxide, chloroform, chlorobenzene, and toluene, and the concentration of the phosphorus-containing passivating agent in the passivation layer solution is 0.001 mg / mL to 10 mg / mL; For example, the concentration of the phosphorus-containing passivating agent in the passivation layer serous solution may be 0.001 mg / mL, 0.01 mg / mL, 0.1 mg / mL, 1 mg / mL, 2 mg / mL, 3 mg / mL, 4 mg / mL, 5 mg / mL, 6 mg / mL, 7 mg / mL, 8 mg / mL, 9 mg / mL, 10 mg / mL, or a range between any two of the above values, but is not limited thereto.

[0175] It can be understood that the structure of the perovskite solar cell according to the present application may not be limited to the structural layers listed above. Other functional layers, such as buffer layers, may be introduced depending on the requirements. In some embodiments, the perovskite solar cell may have a buffer layer suitable for the energy level installed, thereby reducing the energy level barrier, promoting energy level matching, improving carrier extraction efficiency, and simultaneously passivating the interfacial defect state, protecting the light absorption layer, suppressing oxidative decomposition of the cell by water molecules and oxygen, improving photoelectric conversion efficiency, and improving the stability of the perovskite solar cell, and exhibiting one or more of these functions. Depending on the location where the buffer layer is positioned, the types of buffer layers may include four types: a buffer layer between the hole transport layer and the anode, a buffer layer between the electron transport layer and the cathode, a buffer layer between the hole transport layer and the absorption layer, and a buffer layer between the electron transport layer and the absorption layer. Materials that can be used for the buffer layer of a perovskite solar cell may include, but are not limited to, Cu2O, NiO, AZO, TiO2, etc.

[0176] In the third aspect of the present application, a photovoltaic power generation module is provided, comprising the perovskite solar cell of the second aspect of the present application.

[0177] Since the above perovskite solar cell has high photoelectric conversion efficiency and good stability, the photoelectric efficiency and stability of the photovoltaic power generation module can be improved.

[0178] Including one or more of the above perovskite solar cells may be selected according to a specific application scenario; furthermore, the photovoltaic power generation module may include a plurality of perovskite solar cells, and the plurality of perovskite solar cells form a cell by connecting in series or in parallel.

[0179] In some of the embodiments, the photovoltaic power generation module further includes a photovoltaic glass layer, an adhesive layer, and a backplate.

[0180] Each of the two surfaces of the battery cell is provided with an adhesive layer, a backplate is provided on the surface of one adhesive layer that is far from the battery cell, and a solar glass layer is provided on the surface of the other adhesive layer that is far from the battery cell.

[0181] The solar glass layer and backplate are used to protect the perovskite solar cell, providing sealing, insulation, and waterproofing functions; the adhesive layer bonds the solar glass layer to the cell and bonds the backplate to the cell.

[0182] Optionally, the solar glass layer is made of tempered glass, the backplate is made of TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the adhesive layer is made of EVA (polyethylene-polyvinyl acetate copolymer).

[0183] Furthermore, the above-mentioned photovoltaic power generation module further includes a junction box and an external frame.

[0184] The junction box is used to protect the power generation system of the entire solar power module system; it acts as a current relay station, and when a short circuit occurs in a battery cell, the junction box automatically cuts off the power supply to the affected cell.

[0185] The outer frame serves to support and protect the entire solar power generation module, and the outer frame can be made of aluminum alloy material with excellent strength and corrosion resistance.

[0186] Furthermore, the connection points between the external frame and other parts within the photovoltaic module are bonded and sealed using silica gel. The photovoltaic module can convert solar energy into electrical energy to send to a battery for storage or to drive the operation of a load.

[0187] In some embodiments, the photovoltaic power generation module is a solar panel.

[0188] In the fourth aspect of the present application, a photovoltaic power generation system is provided, comprising the photovoltaic power generation module of the third aspect of the present application.

[0189] The photovoltaic power generation system directly converts solar radiation energy into electrical energy using perovskite solar cells among the photovoltaic power generation modules, and has high efficiency and good stability; furthermore, the photovoltaic power generation system is a photovoltaic power generation system.

[0190] A photovoltaic power generation module is a core part of a photovoltaic power generation system, and the photovoltaic power generation system includes one or more photovoltaic power generation modules, which can be selected according to a specific application scenario; furthermore, when the photovoltaic power generation system includes multiple photovoltaic power generation modules, the multiple photovoltaic power generation modules form a photovoltaic power generation array.

[0191] The above-mentioned solar power generation system may be a stand-alone solar power generation system or a grid-connected solar power generation system.

[0192] A standalone photovoltaic power generation system includes a photovoltaic array, a battery group, a charge controller, a power electronic converter (inverter), and a load. Its operating principle is as follows: Solar radiation is first converted into electrical energy through the photovoltaic array, and then power is supplied to the load through the power electronic converter. Simultaneously, surplus electrical energy passes through the charge controller and is stored in an energy storage device in the form of chemical energy. Thus, when sunlight is insufficient, the energy stored in the batteries is boosted by a power electronic converter, a filter, and a power frequency converter, converted into 220V, 50Hz AC electrical energy, and supplied to the AC load.

[0193] A grid-connected photovoltaic power generation system includes a photovoltaic array, a high-frequency DC / DC step-up circuit, a power electronic converter (inverter), and system monitoring. Its operating principle is as follows: Solar radiation is converted through the photovoltaic array, then undergoes high-frequency DC conversion to become high-voltage DC. Subsequently, it is inversely converted through a power electronic converter, after which a sinusoidal alternating current with the same phase frequency as the grid voltage is output to the power grid.

[0194] Since the two aforementioned photovoltaic power generation systems each have their own characteristics, they can be selected according to specific application scenarios.

[0195] In the fifth aspect of the present application, an electric device is provided that includes the perovskite solar cell of the second aspect of the present application.

[0196] In some of the embodiments, the perovskite solar cell may be used as a power generation device for an electrical device. The type of power generation device may include, but is not limited to, integrated power generation. The location of the power generation device may include, but is not limited to, the roof or rear panel of a vehicle.

[0197] Furthermore, the above-mentioned electric equipment may include, but is not limited to, mobile devices (e.g., mobile phones, laptops, etc.), electric vehicles, electric trains, ships and satellites, and power generation systems.

[0198] FIG. 4 is an example of an electric device. This electric device is a vehicle, and furthermore, it may be a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle.

[0199] Other examples of electrical devices include mobile phones, tablet PCs, laptops, calculators, etc.

[0200] Another example of an electrical device could be a wearable device such as a smart watch.

[0201] Below, the beneficial effects of the present application will be further explained by combining examples.

[0202] To clarify the technical problem, technical solution, and beneficial effects addressed in this application, the following description combines examples and drawings for further detail. It is evident that the examples described herein are merely some of the embodiments of this application, not all of them. The description of at least one exemplary example below is for illustrative purposes only and does not constitute any limitation on this application or its application. All other embodiments obtained by those skilled in the art without creative labor, based on the examples of this application, fall within the scope of protection of this application. All materials used in the examples and comparative examples of this application are commercially available.

[0203] Specific technologies or conditions not specified in the examples shall follow the technologies or conditions described in literature in the field or product descriptions. Test samples or measuring instruments used without manufacturer's indication are general products available on the market.

[0204] a. Preparation of phosphorus-containing passivating agents

[0205] 1. Preparation of phosphorus-containing passivating agent (M1)

[0206] Process 1: 1.86 g of compound (1) and 10 mL of tetrahydrofuran are added to a 3-neck flask (1), and when compound (1) is dissolved, the temperature is lowered to -78℃, and 4 mL of n-butyllithium with a concentration of 2.5 mol / L ( n An n-hexane solution of (-BuLi) is added dropwise to a 3-neck flask (1) and stirred for 2 hours to prepare. 2.81 g of compound (2) and 10 mL of tetrahydrofuran are added to a 3-neck flask (2), and when compound (2) is dissolved, the solution from the 3-neck flask (1) is added dropwise to the 3-neck flask (2) and stirred for 12 hours. When the reaction is finished, the mixture is processed with a chromatographic silica gel column to obtain 2.79 g of compound (3), the yield is 80%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J Measure = 7.2 Hz, 4H), 3.03–2.98 (m, 2H), and 2.01–1.96 (m, 2H). The reaction process is as follows:

[0207] .

[0208] Process 2: 340 mg of compound (3), 76 mg of trimethylphosphine (P(CH3)3), 10 mL of 1,2-dichlorobenzene ( o -DCB) is added to a 3-neck flask (3), and 160 o Heating at C for 12 hours, and upon completion of the reaction, the precipitated precipitate was dissolved in 10 mL of water, washed three times with 10 mL × 3 dichloromethane wash water, and finally, water was removed by vacuum distillation to obtain 408 mg of phosphorus-containing passivating agent (M1), with a yield of 98%, and its 1 ¹H NMR (400 MHz, D2O) d 7.42 (d, J= 7.2 Hz, 6H), 7.15 (d, J Measure = 7.2 Hz, 4H), 2.54–2.50 (m, 2H), 1.50–1.46 (m, 2H), and 0.89 (s, 9H). The reaction process is as follows:

[0209] .

[0210] 2. Preparation of phosphorus-containing passivating agent (M2)

[0211] The difference between the preparation of the phosphorus-containing passivating agent (M2) and the phosphorus-containing passivating agent (M1) is that in process 2, 76 mg of trimethylphosphine (P(CH3)3) is replaced with 202 mg of tributylphosphine (PBu3), and after reaction and post-treatment steps, 526 mg of phosphorus-containing passivating agent (M2) is finally obtained, with a yield of 97%, and the 1 ¹H NMR (400 MHz, D2O) d 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J Measure = 7.2 Hz, 4H), 2.54–2.48 (m, 8H), 1.50–1.38 (m, 14H), and 0.90 (s, 9H). The reaction process is as follows:

[0212] .

[0213] 3. Preparation of phosphorus-containing passivating agent (M3)

[0214] Differences between the preparation of phosphorus-containing passivating agent (M3) and phosphorus-containing passivating agent (M1):

[0215] (1) In process 1, 2.81g of compound (2) is replaced with 2.96g of compound (4), and after the reaction, 2.83g of compound (5) is obtained, the yield is 80%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, JMeasure = 7.2 Hz, 4H), 2.94–2.88 (m, 2H), 1.91–1.86 (m, 2H), and 1.45–1.39 (m, 2H). The reaction process is as follows:

[0216] .

[0217] (2) In process 2, 340 mg of compound (3) is replaced with 354 mg of compound (5), and 76 mg of trimethylphosphine (P(CH3)3) is replaced with 202 mg of tributylphosphine, and through reaction and post-treatment steps, 536 mg of phosphorus-containing passivating agent (M3) is finally obtained, the yield is 99%, and the of 1 ¹H NMR (400 MHz, D2O) d 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J Measure = 7.2 Hz, 4H), 2.54–2.50 (m, 8H), 1.50–1.36 (m, 16H), and 0.89 (s, 9H). The reaction process is as follows:

[0218] .

[0219] 4. Preparation of phosphorus-containing passivating agent (M4)

[0220] Differences between the preparation of phosphorus-containing passivating agent (M4) and phosphorus-containing passivating agent (M1):

[0221] (1) If 2.81g of compound (2) in process 1 is replaced with 2.67g of compound (6), 2.36g of compound (7) is obtained after the reaction, and the yield is 72%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.96 (d, J Measure = 7.2 Hz, 2H). The reaction process is as follows:

[0222] .

[0223] (2) In process 2, 340 mg of compound (3) is replaced with 326 mg of compound (7), and 76 mg of trimethylphosphine (P(CH3)3) is replaced with 202 mg of tributylphosphine, and through reaction and post-treatment steps, 524 mg of phosphorus-containing passivating agent (M4) is finally obtained, the yield is 99%, and the of 1 ¹H NMR (400 MHz, D2O) d 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J Measure = 7.2 Hz, 4H), 2.55–2.51 (m, 8H), 1.51–1.34 (m, 12H), and 0.91 (s, 9H). The reaction process is as follows:

[0224] .

[0225] 5. Preparation of phosphorus-containing passivating agent (M5)

[0226] Differences between the preparation of phosphorus-containing passivating agent (M5) and phosphorus-containing passivating agent (M1):

[0227] (1) If 1.86g of compound (1) in process 1 is replaced with 1.98g of compound (8), 2.82g of compound (9) is obtained after the reaction, and the yield is 79%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d Measure 3.03–2.98 (m, 2H), 2.07–1.95 (m, 2H), and 1.62–1.29 (m, 22H). The reaction process is as follows:

[0228] .

[0229] (2) In process 2, 340 mg of compound (3) is replaced with 352 mg of compound (9), and through reaction and post-treatment steps, 423 mg of phosphorus-containing passivating agent (M5) is finally obtained, with a yield of 99%, and the of 1 ¹H NMR (400 MHz, D2O) dMeasure 2.58–2.48 (m, 2H), 1.62–1.29 (m, 24H), and 0.90 (s, 9H). The reaction process is as follows:

[0230] .

[0231] 6. Preparation of phosphorus-containing passivating agent (M6)

[0232] Differences between the manufacture of phosphorus-containing passivating agent (M6) and phosphorus-containing passivating agent (M5):

[0233] In process 2, 76 mg of trimethylphosphine is replaced with 202 mg of tributylphosphine, and through reaction and post-treatment steps, 423 mg of phosphorus-containing passivating agent (M6) is finally obtained, with a yield of 99%, and its 1 ¹H NMR (400 MHz, D2O) d Measure 2.58–2.48 (m, 8H), 1.62–1.29 (m, 30H), and 0.89 (s, 9H). The reaction process is as follows:

[0234] .

[0235] 7. Preparation of phosphorus-containing passivating agent (M7)

[0236] Differences between the preparation of phosphorus-containing passivating agent (M7) and phosphorus-containing passivating agent (M5):

[0237] (1) If 2.81g of compound (2) in process 1 is replaced with 2.96g of compound (4), 2.82g of compound (10) is obtained after the reaction, and the yield is 79%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d Measure 3.03–2.98 (m, 2H), 2.07–1.95 (m, 2H), and 1.62–1.29 (m, 26H). The reaction process is as follows:

[0238] .

[0239] (2) In process 2, 352 mg of compound (9) is replaced with 366 mg of compound (10), and through reaction and post-treatment steps, 551 mg of phosphorus-containing passivating agent (M7) is finally obtained, with a yield of 99%, and the of 1 ¹H NMR (400 MHz, D2O) d Measure 2.58–2.48 (m, 2H), 1.64–1.27 (m, 32H), and 0.90 (s, 9H). The reaction process is as follows:

[0240] .

[0241] 8. Preparation of phosphorus-containing passivating agent (M8)

[0242] Differences between the preparation of phosphorus-containing passivating agent (M8) and phosphorus-containing passivating agent (M5):

[0243] (1) If 2.81g of compound (2) in process 1 is replaced with 2.67g of compound (6), 2.88g of compound (11) is obtained after the reaction, and the yield is 78%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d Measure 3.09–2.98 (m, 2H) and 1.62–1.29 (m, 22H). The reaction process is as follows:

[0244] .

[0245] (2) In process 2, 352 mg of compound (9) is replaced with 352 mg of compound (11), and through reaction and post-treatment steps, 423 mg of phosphorus-containing passivating agent (M8) is finally obtained, with a yield of 99%, and the of 1 ¹H NMR (400 MHz, D2O) d Measure 2.58–2.48 (m, 6H), 1.62–1.29 (m, 28H), and 0.90 (s, 9H). The reaction process is as follows:

[0246] .

[0247] 9. Preparation of phosphorus-containing passivating agent (M9)

[0248] Differences between the preparation of phosphorus-containing passivating agent (M9) and phosphorus-containing passivating agent (M1):

[0249] (1) If 2.81g of compound (2) in process 1 is replaced with 2.88g of compound (12), 1.25g of compound (13) is obtained after the reaction, and the yield is 37%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.79 (s, 4H), 1.30 (d, J Measures (= 7.2 Hz, 4H). The reaction process is as follows:

[0250] .

[0251] (2) In process 2, 340 mg of compound (3) is replaced with 346 mg of compound (13), and 76 mg of trimethylphosphine (P(CH3)3) is replaced with 202 mg of tributylphosphine, and through reaction and post-treatment steps, 541 mg of phosphorus-containing passivating agent (M9) is finally obtained, the yield is 99%, and the of 1 ¹H NMR (400 MHz, D2O) d 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J Measure = 7.2 Hz, 8 H), 2.55–2.51 (m, 16 H), 1.51–1.34 (m, 24 H), and 0.91 (s, 18 H). The reaction process is as follows:

[0252] .

[0253] 10. Preparation of phosphorus-containing passivating agent (M10)

[0254] Differences between the preparation of phosphorus-containing passivating agent (M10) and phosphorus-containing passivating agent (M1):

[0255] (1) If 2.81g of compound (2) in process 1 is replaced with 3.16g of compound (14), 1.27g of compound (15) is obtained after the reaction, and the yield is 34%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J Measure = 7.2 Hz, 8H), 2.95–2.87 (m, 4H), 1.47–1.38 (m, 4H), and 1.24–1.17 (m, 4H). The reaction process is as follows:

[0256] .

[0257] (2) In process 2, 340 mg of compound (3) is replaced with 374 mg of compound (15), and 76 mg of trimethylphosphine (P(CH3)3) is replaced with 202 mg of tributylphosphine, and through reaction and post-treatment steps, 446 mg of phosphorus-containing passivating agent (M10) is finally obtained, the yield is 99%, and the of 1 ¹H NMR (400 MHz, D2O) d 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J Measure = 7.2 Hz, 8 H), 2.50–2.42 (m, 16 H), 1.41–1.14 (m, 40 H), and 0.90 (s, 18 H). The reaction process is as follows:

[0258] .

[0259] 11. Preparation of phosphorus-containing passivating agent (M11)

[0260] 100 mg of phosphorus-containing passivating agent (M10) is used to obtain 98 mg of phosphorus-containing passivating agent (M11) through an ion exchange resin, the yield is 98%, and the of 1 ¹H NMR (400 MHz, D2O) d 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, JMeasure = 7.2 Hz, 8 H), 2.50–2.42 (m, 16 H), 1.41–1.14 (m, 40 H), and 0.90 (s, 18 H). The reaction process is as follows:

[0261] .

[0262] 12. Phosphorus-containing passivating agent (M12)

[0263] Differences between the preparation of phosphorus-containing passivating agent (M12) and phosphorus-containing passivating agent (M10):

[0264] (1) When 3.16g of compound (14) in process 1 is replaced with 6.31g, 1.27g of compound (16) is obtained after the reaction, and the yield is 34%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J Measure = 7.2 Hz, 4H), 2.95–2.87 (m, 6H), 1.47–1.38 (m, 2H), and 1.24–1.17 (m, 8H). The reaction process is as follows:

[0265] .

[0266] (2) In process 2, 374 mg of compound (15) is replaced with 229 mg of compound (16), and through reaction and post-treatment steps, 415 mg of phosphorus-containing passivating agent (M12) is finally obtained, with a yield of 99%, and the of 1 ¹H NMR (400 MHz, D2O) d 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J Measure = 7.2 Hz, 4H), 2.50–2.42 (m, 6H), 1.41–1.14 (m, 64H), and 0.90 (s, 27H). The reaction process is as follows:

[0267] .

[0268] 13. Phosphorus-containing passivating agent (M13)

[0269] Differences between the preparation of phosphorus-containing passivating agent (M13) and phosphorus-containing passivating agent (M10):

[0270] (1) If 3.16g of compound (14) in process 1 is replaced with 2.11g, 1.51g of compound (17) is obtained after the reaction, and the yield is 56%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d 7.42 (d, J = 7.2 Hz, 18H), 7.15 (d, J Measure = 7.2 Hz, 12H), 2.95–2.87 (m, 2H), 1.47–1.38 (m, 6H), and 1.24–1.17 (m, 8H). The reaction process is as follows:

[0271] .

[0272] (2) In process 2, 374 mg of compound (15) is replaced with 806 mg of compound (17), and through reaction and post-treatment steps, 998 mg of phosphorus-containing passivating agent (M13) is finally obtained, with a yield of 98%, and the of 1 ¹H NMR (400 MHz, D2O) d 7.42 (d, J = 7.2 Hz, 18H), 7.15 (d, J Measure = 7.2 Hz, 12 H), 2.50–2.42 (m, 14 H), 1.41–1.14 (m, 32 H), and 0.90 (s, 9 H). The reaction process is as follows:

[0273] .

[0274] 14. Phosphorus-containing passivating agent (M14)

[0275] 100 mg of phosphorus-containing passivating agent (M13) is used to obtain 98 mg of phosphorus-containing passivating agent (M14) through an ion exchange resin, the yield is 98%, and the of 1 ¹H NMR (400 MHz, D2O) d7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J Measure = 7.2 Hz, 8 H), 2.50–2.42 (m, 16 H), 1.41–1.14 (m, 40 H), and 0.90 (s, 18 H). The reaction process is as follows:

[0276] .

[0277] 15. Phosphorus-containing passivating agent (M15)

[0278] Differences between the preparation of phosphorus-containing passivating agent (M15) and phosphorus-containing passivating agent (M1):

[0279] (1) If 2.81g of compound (2) in process 1 is replaced with 3.36g of compound (18), 1.26g of compound (19) is obtained after the reaction, and the yield is 32%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d Measure 7.44-7.40 (m, 6H), 7.17-7.13 (m, 4H), 4.02-3.98 (m, 2H), 2.11-2.07 (m, 4H), and 1.67-1.32 (m, 5H). The reaction process is as follows:

[0280] .

[0281] (2) In process 2, 340 mg of compound (3) is replaced with 394 mg of compound (19), and 76 mg of trimethylphosphine (P(CH3)3) is replaced with 202 mg of tributylphosphine, and through reaction and post-treatment steps, 587 mg of phosphorus-containing passivating agent (M15) is finally obtained, with a yield of 98%, and the of 1 ¹H NMR (400 MHz, D2O) d Measure 7.44-7.40 (m, 6H), 7.17-7.13 (m, 4H), 2.48-2.44 (m, 6H), 1.63-1.56 (m, 4H), 1.45-1.41 (m, 2H), 1.32-1.26 (m, 16H), and 0.91-0.87 (m, 9H). The reaction process is as follows:

[0282] .

[0283] 16. Phosphorus-containing passivating agent (M16)

[0284] Differences between the preparation of phosphorus-containing passivating agent (M16) and phosphorus-containing passivating agent (M1):

[0285] There is no need to perform the reaction process of Process 1. In Process 2, 340 mg of compound (3) is replaced with 394 mg of compound (20), and 76 mg of trimethylphosphine (P(CH3)3) is replaced with 202 mg of tributylphosphine, and through reaction and post-treatment steps, 601 mg of phosphorus-containing passivating agent (M16) is finally obtained, the yield is 99%, and the of 1 ¹H NMR (400 MHz, D2O) d Measure 7.47–7.42 (m, 6H), 7.19–7.13 (m, 8H), 2.64 (s, 2H), 1.42–1.36 (m, 18H), and 0.93–0.89 (m, 9H). The reaction process is as follows:

[0286] .

[0287] 17. Phosphorus-containing passivating agent (M17)

[0288] Differences between the preparation of phosphorus-containing passivating agent (M17) and phosphorus-containing passivating agent (M1):

[0289] There is no need to perform the reaction process of Process 1. In Process 2, 340 mg of compound (3) is replaced with 462 mg of compound (21), and 76 mg of trimethylphosphine (P(CH3)3) is replaced with 202 mg of tributylphosphine, and through reaction and post-treatment steps, 632 mg of phosphorus-containing passivating agent (M17) is finally obtained, the yield is 95%, and the of 1 ¹H NMR (400 MHz, D2O) dMeasure 7.19–7.13 (m, 8H), 7.00–6.96 (m, 4H), 3.81 (s, 6H), 2.64 (s, 2H), 1.42–1.36 (m, 18H), and 0.93–0.89 (m, 9H). The reaction process is as follows:

[0290] .

[0291] 18. Phosphorus-containing passivating agent (M18)

[0292] Differences between the preparation of phosphorus-containing passivating agent (M18) and phosphorus-containing passivating agent (M1):

[0293] (1) When 2.81g of compound (2) in process 1 is replaced with 3.33g of compound (22), 1.57g of compound (23) is obtained after the reaction, and the yield is 41%, and the of 1 ¹H NMR (400 MHz, CD2Cl2) d Measure 7.44-7.40 (m, 6H), 7.17-7.13 (m, 4H), 3.96-3.92 (m, 4H), 3.13-3.08 (m, 2H), and 1.63-1.60 (m, 2H). The reaction process is as follows:

[0294] .

[0295] (2) In process 2, 340 mg of compound (3) is replaced with 384 mg of compound (23), 76 mg of trimethylphosphine (P(CH3)3) is replaced with 202 mg of tributylphosphine, and through reaction and post-treatment steps, 582 mg of phosphorus-containing passivating agent (M18) is finally obtained, the yield is 99%, and the of 1 ¹H NMR (400 MHz, D2O) d Measure 7.44-7.40 (m, 6H), 7.17-7.13 (m, 4H), 3.43-3.39 (m, 4H), 1.63-1.56 (m, 4H), 1.45-1.36 (m, 18H), and 0.91-0.87 (m, 9H). The reaction process is as follows:

[0296] .

[0297] B. Manufacturing of Perovskite Solar Cells

[0298] Example 1

[0299] (1) 20 sheets of FTO conductive glass with dimensions of 2.0*2.0 cm are taken, and 0.35 cm of FTO is removed from each end by laser etching to expose the glass substrate, and the FTO conductive glass is ultrasonically cleaned several times with water, acetone, and isopropyl alcohol sequentially, the solvent of the FTO conductive glass is dried under a nitrogen gun, and the glass is placed in an ultraviolet ozone generator for further cleaning; wherein the FTO conductive glass refers to glass obtained by forming a conductive material layer on one surface of a glass substrate using fluorine-doped tin oxide as a conductive material;

[0300] (2) A hole transport layer with a thickness of 35 nm is prepared by spin-coating 10 mg / mL of nickel oxide nanoparticles (water solution is the solvent) at a speed of 4000 rpm on an FTO substrate after UV ozone treatment, and annealing treatment is performed for 30 min at a heating stage at 100°C.

[0301] (3) Take lead iodide, formamidinium iodide, cesium iodide and lead bromide in a molar ratio of 97:3:95:5, and a phosphorus-containing passivating agent (M1) that accounts for 1 wt% of the four materials, dissolve all solid powders in a mixed solution of DMF and DMSO in a volume ratio of 100:1, stir for 3 hours, and filter through an organic filter membrane of 0.22 μm to obtain a perovskite precursor solution, spin-coat the perovskite precursor solution at 3000 rpm in a hole transport layer, anneale at 100°C for 30 min, and cool to room temperature to obtain a perovskite light absorption layer with a thickness of 500 nm.

[0302] (4) PC at 1500 rpm in the perovskite light absorption layer 61A chlorobenzene solution of BM is spin-coated and annealed at 100°C for 10 min to produce an electron transport layer with a thickness of about 30 nm; then, a blocking layer with a thickness of 5 nm is prepared by spin-coating with an isopropyl alcohol solution of BCP at 5000 rpm.

[0303] (5) Place the obtained plate in a deposition machine and deposit a metal electrode (Cu) to produce an electrode layer with a thickness of about 100 nm.

[0304] Examples 2–18 and Examples 21–24

[0305] The manufacturing method of the perovskite solar cell in Examples 2 to 18 and Examples 21 to 24 and the manufacturing method of the perovskite solar cell in Example 1 are basically similar, and the difference is mainly that at least one of the following is different: the type and / or capacity of the phosphorus-containing passivating agent, the type of material of the blocking layer, the thickness of the blocking layer, the type of material of the perovskite light absorption layer, the thickness of the perovskite light absorption layer, the type of transparent conductive substrate and the type of electron transport layer, the type and / or thickness of the hole transport layer, and the type and / or thickness of the electrode layer. For specific details, refer to Table 1.

[0306] If the type and / or amount of raw materials used when manufacturing a perovskite light absorption layer are different, the type of material of the perovskite light absorption layer obtained is different, and since the type and amount of raw materials added when manufacturing the perovskite light absorption layer can be inferred from the type of perovskite light absorption layer obtained, it can be understood that, for the purpose of clarity and conciseness, Table 1 below lists only the types of material of the perovskite light absorption layer obtained in each example and comparative example.

[0307] Example 19

[0308] The difference between the method for manufacturing a perovskite solar cell in Example 19 and the method for manufacturing a perovskite solar cell in Example 1 is mainly that a phosphorus-containing passivating agent (M1) is not added to the perovskite light absorption layer, and after the perovskite light absorption layer is manufactured, an isopropyl alcohol solution containing 0.5 mg / mL of phosphorus-containing passivating agent (M1) is spin-coated onto the surface of the perovskite light absorption layer at a rotation speed of 3000 rpm to manufacture a passivation layer with a thickness of 5 nm.

[0309] Example 20

[0310] The main difference between the method of manufacturing a perovskite solar cell in Example 20 and the method of manufacturing a perovskite solar cell in Example 1 is that, instead of adding a phosphorus-containing passivating agent (M1) to the perovskite light absorption layer, after the hole transport layer is completed, an isopropyl alcohol solution containing 0.5 mg / mL of phosphorus-containing passivating agent (M1) is spin-coated onto the surface of the hole transport layer at a rotation speed of 3000 rpm to produce a passivation layer with a thickness of 5 nm.

[0311] Examples 25-26

[0312] The difference between the manufacturing method of the perovskite solar cell in Examples 25 and 26 and the manufacturing method of the perovskite solar cell in Example 19 is that the thickness of the passivation layer is different, and for specific details, refer to Table 1.

[0313] Comparative Example 1

[0314] The difference between Comparative Example 1 and Example 21 is that a phosphorus-containing passivating agent was not added, and all other details are the same. Refer to Table 1 for specific details.

[0315] Comparative Example 2

[0316] The difference between Comparative Example 2 and Example 21 is that the phosphorus-containing passivating agent (M1) is replaced with a passivating agent (X) having the following structure, and all other details are the same. Refer to Table 1 for specific details.

[0317]

[0318] Comparative Example 3

[0319] The difference between Comparative Example 3 and Example 1 is that the phosphorus-containing passivating agent (M1) is replaced with a passivating agent (Y) having the following structure, and all other details are the same. Refer to Table 1 for specific details.

[0320]

[0321] The parameters of each of the above examples and comparative examples are as shown in Table 1.

[0322]

[0323]

[0324]

[0325]

[0326]

[0327]

[0328] Here, n1 represents the mass ratio of the phosphorus-containing passivating agent in the perovskite light absorption layer, BCP represents 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, and PC 61 BM is a [6,6]-phenyl group C 61M1 represents methyl butyrate; FTO represents fluorine-doped tin oxide, wherein the amount of fluorine mixed is 5% atomic percentage; M1 upper passivation represents the preparation of a passivation layer on the surface of the perovskite light absorption layer after the perovskite light absorption layer is completed, and M1 lower passivation represents the preparation of a passivation layer on the surface of the hole transport layer after the hole transport layer is completed.

[0329] It should be noted that in each of the above examples and comparative examples, the thicknesses of the hole transport layer, electron transport layer, perovskite light absorption layer, passivation layer, blocking layer, and electrode layer are obtained by measuring with an atomic force microscope.

[0330] C. Perovskite Solar Cell Performance Test

[0331] Photoelectric conversion efficiency test

[0332] Tests were performed in accordance with the national standard IEC61215 using a solar simulator from ENLITECH, and the light intensity of the crystalline silicon solar cell was used to achieve the same solar intensity (AM 1.5). In each of the above examples and comparative examples, the perovskite solar cell was connected to a digital source meter, and the photoelectric conversion efficiency was measured on the 3rd and 30th days under light. The results are shown in Table 2.

[0333]

[0334]

[0335] As can be seen by comparing the results of Examples 1 to 26 and Comparative Examples 1 to 3 in Table 2, when manufacturing perovskite solar cells, adding the phosphorus-containing passivating agent of the present application can improve the photoelectric conversion efficiency and stability of the perovskite solar cells.

[0336] The difference between Example 1 and Examples 21 to 24 is that the mass ratio of the phosphorus-containing passivating agent in the perovskite light absorption layer is different, and as can be seen from the results of Example 1 and Examples 21 to 24, when the addition content of M1 in the perovskite layer is about 0.1%, the perovskite cell component reaches better efficiency and has higher stability.

[0337] The difference between Example 19 and Examples 25-26 is that the thickness of the passivation layer is different, and as can be seen from the results of Example 19 and Examples 25-26, when the upper interface of M1 in the perovskite layer forms a layer alone and the thickness is about 5 nm, the perovskite cell component reaches better efficiency and has higher stability.

[0338] Each component of the embodiments described above may be combined arbitrarily, and for the sake of brevity, not all possible combinations of each technical feature are described in the embodiments; however, as long as such combinations of technical features are not contradictory, they should be considered to be within the scope described herein.

[0339] The foregoing embodiments merely represent a few embodiments of the present application, and while the descriptions are relatively specific and detailed, they should not be interpreted as limiting the scope of the patent. Those skilled in the art should note that some modifications and improvements may be made without departing from the concept of the present application, and that all such modifications fall within the scope of protection of the present application. Accordingly, the scope of protection of the present application is based on the claims, and the specification and drawings may be used to interpret the contents of the claims.

Claims

Claim 1 A perovskite solar cell, wherein the perovskite solar cell comprises a phosphorus-containing passivating agent, and the phosphorus-containing passivating agent comprises an ionic compound, wherein the ionic compound comprises a cation group; wherein the cation group has a structure: ALB(I) as indicated by the following chemical formula (I), where A represents an organic phosphorus group having a lone pair of electrons, B represents an organic phosphorus base having a positive charge, and L represents a linker between the organic phosphorus group and the organic phosphorus base. Claim 2 A perovskite solar cell according to claim 1, wherein the ionic compound further comprises an anionic group, and the anionic group comprises one or more of a halogen anion, a halogen-like anion, a tetrafluoroborate ion, a hexafluorophosphate ion, and a dimethylmethanesulfonamide ion. Claim 3 A perovskite solar cell according to claim 1, wherein L comprises one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkane group and a substituted or unsubstituted arylene group. Claim 4 In any one of claims 1 to 3, the phosphorus-containing passivating agent has the structure shown in the following chemical formula (II): (II) having any one of a substituted or unsubstituted alkyl group, a substituted or unsubstituted naphthenic group and a substituted or unsubstituted aryl group; L having any one of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkane group and a substituted or unsubstituted arylene group; X having any one of a halogen anion and a halogen-containing anionic group; 1≤n1≤4, 1≤n2≤10, 1≤n3≤4, and n1, n2, n3 are integers, perovskite solar cell. Claim 5 A perovskite solar cell according to claim 4, wherein R1, R2, R3, R4, and R5 comprise any one of an alkyl group having 1 to 10 carbon atoms, a naphthenic group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group; and the substituent in the substituted phenyl group comprises one or more of a halogen, an alkyl group, a naphthenic group, an alkoxy group, a sulfane group, a silane group, and a siloxane group. Claim 6 A perovskite solar cell according to claim 5, wherein the substituent in the substituted phenyl group comprises one or more of a halogen, an alkyl group having 1 to 10 carbon atoms, a naphthenic group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a sulfane group having 1 to 10 carbon atoms, a silane group having 1 to 10 carbon atoms, and a siloxane group having 1 to 10 carbon atoms. Claim 7 A perovskite solar cell according to claim 5, wherein R1 and R2 comprise any one of a naphthenic group and a phenyl group having 1 to 10 carbon atoms. Claim 8 A perovskite solar cell according to claim 5, wherein R3, R4, and R5 comprise any one of an alkyl group having 1 to 10 carbon atoms. Claim 9 A perovskite solar cell according to any one of claims 1 to 3, wherein L comprises any one of an alkylene group having 1 to 10 carbon atoms, a cycloalkane group having 1 to 10 carbon atoms, a phenylene group, and a substituted phenylene group; and the substituent in the substituted phenylene group comprises one or more of a halogen, an alkyl group, a naphthene group, an alkoxy group, a sulfane group, a silane group, and a siloxane group. Claim 10 A perovskite solar cell according to claim 9, wherein the substituent in the substituted phenylene group comprises one or more of a halogen, an alkyl group having 1 to 10 carbon atoms, a naphthenic group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a sulfane group having 1 to 10 carbon atoms, a silane group having 1 to 10 carbon atoms, and a siloxane group having 1 to 10 carbon atoms. Claim 11 In claim 9, the perovskite solar cell wherein L comprises any one of an alkylene group having 1 to 10 carbon atoms. Claim 12 In paragraph 4, the perovskite solar cell wherein X comprises any one of iodide ions and tetrafluoroborate ions. Claim 13 A perovskite solar cell comprising any one of the following structural formulas in any one of claims 1 to 3: , , , , , , , , , , , , , , , , , . Claim 14 A perovskite solar cell according to claim 1, wherein the perovskite solar cell comprises a perovskite light absorption layer, and the perovskite light absorption layer comprises a phosphorus-containing passivating agent; and the mass ratio of the phosphorus-containing passivating agent in the perovskite light absorption layer is 0.01% to 1%. Claim 15 The perovskite solar cell according to claim 1, wherein the perovskite solar cell comprises a stacked perovskite light absorption layer and a passivation layer, wherein the passivation layer is located on the light input or light output side of the perovskite light absorption layer, and the passivation layer comprises the phosphorus-containing passivation agent; and wherein the thickness of the passivation layer is 0.1 nm to 10 nm. Claim 16 In claim 14, the perovskite solar cell comprises an active material having the molecular formula ABX3 or A2CDX6 in the perovskite light absorption layer. Claim 17 In claim 16, the active material having the molecular formula ABX3 or A2CDX6 is a perovskite solar cell having at least one of the following features: (1) A comprises one or more of organic cations and inorganic cations; (2) B comprises one or more of organic cations and inorganic cations; (3) C comprises one or more of organic cations and inorganic cations; (4) D comprises one or more of organic cations and inorganic cations; (5) X comprises one or more of organic anions and inorganic anions. Claim 18 In claim 16, the active material having the molecular formula ABX3 or A2CDX6 has at least one of the following features, a perovskite solar cell: (1) A is a monovalent amidino cation, a monovalent amino group cation and Cs + (2) B is Pb 2+ and Sn 2+ (3) C includes one or more of Ag + Includes;(4) D is Bi 3+ , Sb 3+ , and In 3+ Includes one or more of the following; (5) X is Br - and I - Includes one or more of the following. Claim 19 In claim 14, the perovskite solar cell, wherein the perovskite light absorption layer has at least one of the following features: (1) the thickness of the perovskite light absorption layer is 100 nm to 1000 nm; (2) the band gap width of the perovskite light absorption layer is 1.2 eV to 2.3 eV. Claim 20 In claim 14, the perovskite solar cell further comprises an electron transport layer, a blocking layer, and an electrode layer located on the light-emitting side of the perovskite light-absorbing layer, wherein the electron transport layer, the blocking layer, and the electrode layer are sequentially stacked, and among them, the electron transport layer is closer to the perovskite light-absorbing layer; the material of the blocking layer comprises one or more of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, SnO2, ZnO, and cerium-containing oxide; and the thickness of the blocking layer is 0.5 nm to 20 nm. Claim 21 A photovoltaic power generation module comprising a perovskite solar cell according to claim 1. Claim 22 A photovoltaic power generation system comprising a photovoltaic power generation module according to Article 21. Claim 23 An electrical device comprising a perovskite solar cell according to claim 1.

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