Inspection apparatus, inspection method and mounting method for semiconductor devices for display devices
Patent Information
- Authority / Receiving Office
- KR · KR
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-02-03
- Publication Date
- 2026-08-12
Smart Images

Figure PAT00006_ABST
Abstract
Description
Technology Field
[0001] The invention relates to an inspection device, an inspection method, and a mounting method for a semiconductor device for a display device. Background Technology
[0002] Display devices can be classified into self-emissive displays, where each pixel emits light on its own, and light-emitting displays, which require a separate light source.
[0003] Self-emissive displays, in which each pixel is equipped with a light-emitting element to emit light independently, do not require components such as backlight units and liquid crystal layers, and can also omit color filters; thus, they are structurally simple and offer high design freedom. Furthermore, not only can a thin thickness be achieved, but excellent contrast ratio, brightness, and viewing angle can also be realized.
[0004] Among self-emissive displays, micro LED displays are composed of multiple micro LEDs with a size in the micro range. Compared to LCDs that require a backlight, micro LED displays can provide excellent contrast, excellent response time, and excellent energy efficiency.
[0005] LEDs can be classified into horizontal LEDs, vertical LEDs, and flip LEDs depending on their structure.
[0006] In the case of a vertical LED, the electrode connected to the P-type semiconductor and the electrode connected to the N-type semiconductor are arranged in a direction perpendicular to each other with respect to the substrate, allowing the LED to be implemented with a relatively small size and achieve high light output relative to its size.
[0007] One aspect of the present disclosure provides an inspection device and inspection method for a semiconductor device for a display device that can efficiently inspect whether the semiconductor device is defective.
[0008] One aspect of the present disclosure provides an inspection device and inspection method for a semiconductor device for a display device, which can be easily identified where in the semiconductor device a connection failure has occurred.
[0009] One aspect of the present disclosure provides a method for mounting a semiconductor device for a display device that is improved to allow for defect inspection to be performed while mounting a new semiconductor device on a substrate.
[0010] The technical problems to be solved in this document are not limited to those mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art to which this invention belongs from the description below.
[0011] A testing device for a semiconductor device for a display device according to one embodiment of the present disclosure may be a device configured to test a semiconductor device comprising a semiconductor layer that is mounted on a substrate of a display device, has a first surface electrically connected to the substrate by an electrode, and a second surface opposite to the first surface, and is configured to allow current to flow based on the application of a predetermined voltage between the first surface and the second surface. The testing device may include a probe configured to be connectable to the second surface of the semiconductor layer, a power supply configured to apply the predetermined voltage between the electrode electrically connected to the substrate and the probe, and a detector configured to test whether current flows between the electrode and the probe.
[0012] A method for inspecting a semiconductor device for a display device according to one embodiment of the present disclosure may be a method for inspecting a semiconductor device comprising a semiconductor layer that is mounted on a substrate of a display device, has a first surface electrically connected to the substrate by an electrode, and a second surface opposite to the first surface, and is configured to allow current to flow based on the application of a predetermined voltage between the first surface and the second surface. The inspection method may include electrically connecting a probe to the second surface of the semiconductor layer, applying the predetermined voltage between the electrode electrically connected to the substrate and the probe, and inspecting whether current flows between the electrode and the probe.
[0013] A method for mounting a semiconductor device for a display device according to one embodiment of the present disclosure may be a method for mounting a semiconductor device comprising a semiconductor layer through which current flows based on the application of a predetermined voltage between a first electrode and a second electrode onto a substrate. The mounting method may include picking up the semiconductor device placed on a wafer using a stamp; dropping the picked-up semiconductor device onto the substrate such that a first surface of the semiconductor device to be connected to the first electrode faces the substrate; electrically connecting the semiconductor layer to the substrate through the first electrode; electrically connecting a probe to a second surface of the semiconductor device opposite to the first surface of the semiconductor device and to be connected to the second electrode; applying the predetermined voltage between the first electrode and the probe; and detecting whether current flows between the first electrode and the probe. Brief explanation of the drawing
[0014] FIG. 1 is a perspective view of a display device according to one embodiment of the present disclosure. FIG. 2 is an exploded perspective view of a display device according to one embodiment of the present disclosure. FIG. 3 is an enlarged cross-sectional view illustrating some components of a display device according to one embodiment of the present disclosure. FIG. 4 is a drawing illustrating a substrate of a display device, a semiconductor device, and an inspection device for a semiconductor device according to one embodiment of the present disclosure. FIG. 5 is a drawing showing one side for inspecting a semiconductor element of a display device according to one embodiment of the present disclosure. FIG. 6 is a diagram illustrating the process of inspecting an inorganic light-emitting element of a display device according to one embodiment of the present disclosure using an inspection device. FIG. 7 is a diagram illustrating the process of inspecting a connector element of a display device according to one embodiment of the present disclosure using an inspection device. FIG. 8 is a drawing illustrating an example of a probe included in a test device for a semiconductor element for a display device according to one embodiment of the present disclosure. Figure 9 is a diagram showing the probe of Figure 8 being pressed by a semiconductor device. FIG. 10 is a drawing illustrating an example of a probe included in a test device for a semiconductor element for a display device according to one embodiment of the present disclosure. Figure 11 is a diagram showing the probe of Figure 10 being pressed by a semiconductor device. FIG. 12 is a drawing illustrating an example of a process of inspecting a semiconductor element of a display device with an inspection device according to one embodiment of the present disclosure. FIG. 13 is a drawing illustrating an example of a process of inspecting a semiconductor element of a display device with an inspection device according to one embodiment of the present disclosure. FIG. 14 is a drawing illustrating the step of picking up a semiconductor element for a display device from a wafer according to one embodiment of the present disclosure. FIG. 15 is a drawing illustrating the step of dropping a semiconductor element for a display device onto a substrate according to one embodiment of the present disclosure. FIG. 16 is a drawing illustrating the step of inspecting a semiconductor element for a display device according to one embodiment of the present disclosure. FIG. 17 is a drawing illustrating an inspection device for a semiconductor element for a display device according to one embodiment of the present disclosure. FIG. 18 is a drawing illustrating an inspection device for a semiconductor element for a display device according to one embodiment of the present disclosure. FIG. 19 is a drawing illustrating an inspection device for a semiconductor element for a display device according to one embodiment of the present disclosure. Specific details for implementing the invention
[0015] The embodiments described in this specification and the configurations illustrated in the drawings are merely preferred examples of the disclosed invention, and various modifications that may replace the embodiments and drawings of this specification may exist at the time of filing this application.
[0016] Additionally, the same reference numerals or symbols presented in each drawing of this specification represent parts or components that perform substantially the same function.
[0017] Furthermore, the terms used in this specification are for describing embodiments and are not intended to limit or / or restrict the disclosed invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprising" or "having" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and do not preclude the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.
[0018] Additionally, terms including ordinal numbers, such as "first," "second," etc., used herein may be used to describe various components, but said components are not limited by said terms, and said terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The term "and / or" includes a combination of a plurality of related described items or any one of a plurality of related described items.
[0019] The terms 'part, module, component, block' as used in the specification may be implemented in software or hardware, and depending on the embodiments, a plurality of 'parts, modules, components, blocks' may be implemented as a single component, or a single 'part, module, component, block' may include a plurality of components.
[0020] Various embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.
[0021] In describing various embodiments of the present disclosure with reference to FIGS. 1 through 19, terms such as "front-back direction," "up-down direction," and "left-right direction" used in the following description are defined based on the display device according to the various embodiments illustrated in the drawings, and the shape and position of each component are not limited by these terms. For example, the term "front-back direction" below may mean a direction parallel to the Z direction with respect to the drawings. For example, "up-down direction" may mean a direction parallel to the Y direction with respect to the drawings. For example, the term "left-right direction" below may each mean a direction parallel to the X direction with respect to the drawings.
[0022] FIG. 1 is a perspective view of a display device according to one embodiment of the present disclosure. FIG. 2 is an exploded perspective view of a display device according to one embodiment of the present disclosure.
[0023] Referring to FIGS. 1 and FIGS. 2, a display device (1) according to various embodiments of the present disclosure is a device capable of processing an image signal received from the outside and visually displaying the processed image.
[0024] For example, a display device (1) according to various embodiments of the present disclosure can be implemented in various forms, such as a television (TV), a monitor which is a type of output device for a computer, a portable multimedia device, a portable communication device, or digital signage. For example, a display device (1) according to various embodiments of the present disclosure may be a large format display (LFD) installed outdoors, such as on a rooftop or at a bus stop. Here, the outdoor area is not necessarily limited to an open space; the display device (1) according to various embodiments of the present disclosure may be installed in any indoor location where many people can enter and exit, such as a subway station, shopping mall, movie theater, company, or store. As long as the display device (1) according to various embodiments of the present disclosure is a device that visually displays images, its type is not limited to what has been described above.
[0025] For example, the display device (1) can be installed in a standing manner on a floor surface or furniture indoors or outdoors. For example, the display device (1) can be installed on a wall surface or inside a wall of a building or other structure. For example, the display device (1) can be installed on a wall by a wall mount device.
[0026] In FIGS. 1 and 2, the display device (1) is described as a flat display device with a flat screen, but is not limited thereto. The display device (1) according to various embodiments of the present disclosure may include a curved display device or a variable (bendable or flexible) display device capable of varying between a flat state and a curved state. The configuration of the present disclosure described below can be applied to display devices of various shapes regardless of the screen size or aspect ratio of the display device.
[0027] The display device (1) receives content including video signals and audio signals from various content sources and can output video and audio corresponding to the video signals and audio signals. For example, the display device (1) can receive content data through a broadcast receiving antenna or a wired cable, receive content data from a content playback device, or receive content data from a content provider's content provision server.
[0028] The display device (1) can display an image corresponding to video data and output sound corresponding to audio data. For example, the display device (1) can restore multiple image frames included in the video data and continuously display multiple image frames. In addition, the display device (1) can restore an audio signal included in the audio data and continuously output sound according to the audio signal.
[0029] According to one embodiment of the present disclosure, a display device (1) may include a plurality of display modules (10). Each of the plurality of display modules (10) may be configured to output an image. The display device (1) may provide a single large image formed by combining the images of each of the plurality of display modules (10).
[0030] A plurality of display modules (10) may be arranged adjacent to each other. A plurality of display modules (10) may be arranged adjacently in the up-down direction or the left-right direction. A plurality of display modules (10) may be arranged in a matrix form of M * N (wherein M and N are natural numbers, and at least one of M and N is a natural number of 2 or more). In this embodiment, a plurality of display modules (10) are provided in 16 units and arranged in a matrix form of 4 * 4, but the number and arrangement method of the plurality of display modules (10) are not limited thereto.
[0031] The display device (1) may include a board assembly (16). Electronic components may be mounted on the board assembly (16), and a circuit including the electronic components may be provided on the board assembly (16). For example, the circuit of the board assembly (16) may be formed by printing a conductive material, such as copper (Cu), as a circuit line pattern on an electrically insulating substrate.
[0032] For example, the board assembly (16) may include a main board that controls the overall operation of the display device (1), a power supply board provided to supply power to various components of the display device (1), and a source board provided to control the operation of light sources (e.g., inorganic light-emitting elements (110)) included in a plurality of display modules (10). The circuit boards of the board assembly (16), such as the main board, power supply board, and source board, may be arranged independently of each other or merged together. When the circuit boards are arranged independently of each other, they may be electrically connected to each other to transmit and receive data, signals, or power.
[0033] The display device (1) may include a frame (15) that supports a plurality of display modules (10) and a rear cover (11) that supports the rear of the frame (15).
[0034] Multiple display modules (10) can be mounted on a frame (15). Multiple display modules (10) can be tiled in a matrix form by being mounted on the frame (15). Multiple display modules (10) can be installed on the frame (15) through various known methods, such as magnetic force using magnets or mechanical fitting structures.
[0035] The rear cover (11) can be attached to the rear of the frame (15). The rear cover (11) can cover the rear of a plurality of display modules (10), the frame (15), and the board assembly (16). The rear cover (11) can form the rear exterior of the display device (1).
[0036] According to one embodiment, the rear cover (11) may include a metal material. This allows heat generated from a plurality of display modules (10) and board assemblies (16) or heat transferred to the frame (15) to be conducted to the rear cover (11), and the heat dissipation efficiency of the display device (1) can be improved.
[0037] The rear cover (11) can be installed on the floor or on a cabinet via a stand, or installed on a wall via a wall mount device, etc.
[0038] By the configurations of the embodiments described above, the display device (1) can realize a large-area screen by tiling a plurality of display modules (10).
[0039] Multiple display modules (10) may have the same configuration as each other. The description of any one display module (10) described below may be applied to all other display modules (10) accordingly.
[0040] The display module (10) may include a screen configured to display an image. The screen may be provided on one side of the front of the display module (10) (i.e., the front). The display module (10) may display an image forward through the screen.
[0041] Multiple pixels may be formed on the screen. An image displayed on the screen may be formed by light emitted by each of the multiple pixels. For example, an image may be formed on the screen by combining the light emitted by multiple pixels as if in a mosaic.
[0042] Each of the plurality of pixels may emit light of various brightness and various colors. Specifically, each of the plurality of pixels may include subpixels, and the subpixels may include a red subpixel capable of emitting red light, a green subpixel capable of emitting green light, and a blue subpixel capable of emitting blue light. For example, red light may represent light with a wavelength of approximately 620 nm (nanometer, one-billionth of a meter) to 750 nm, green light may represent light with a wavelength of approximately 495 nm to 570 nm, and blue light may represent light with a wavelength of approximately 450 nm to 495 nm.
[0043] Each of the multiple pixels can emit light of various brightness and various colors through a combination of light emitted from the red subpixel, green subpixel, and blue subpixel, respectively.
[0044] Subpixels can be arranged along the left-right direction (Y). Subpixels can be arranged along the up-down direction (Z). Alternatively, subpixels may not be arranged in a straight line with each other.
[0045] According to one embodiment, the display module (10) may be a self-emissive display type in which a light-emitting element is arranged for each pixel so that each pixel can emit light on its own. In such an embodiment, unlike a liquid crystal display type, the display module (10) does not need to be equipped with components such as a backlight unit and a liquid crystal layer, so a thin thickness can be achieved, and it has a relatively simple structure, allowing for various design changes.
[0046] According to one embodiment, the display module (10) may include a plurality of inorganic light-emitting elements (110). Each of the plurality of inorganic light-emitting elements (110) may form a subpixel. The plurality of inorganic light-emitting elements (110) may include a red inorganic light-emitting element (110R), a green inorganic light-emitting element (110G), and a blue inorganic light-emitting element (110B). Each of the plurality of inorganic light-emitting elements (110) may be a micro LED having a short side length of approximately 100 μm, approximately tens of μm, or several μm.
[0047] The red weapon light-emitting element (110R), the green weapon light-emitting element (110G), and the blue weapon light-emitting element (110B) may be arranged in a line at predetermined intervals as shown in FIG. 1. However, they are not limited to this and may also be arranged in other shapes, such as a triangular shape.
[0048] Additionally, in the present disclosure, an example is given in which a single pixel is composed of three subpixels corresponding to R, G, and B, respectively, but is not limited thereto. A single pixel may be composed of two subpixels of R and G, or G and B, or B and R, or three subpixels of R, B, and W, or four subpixels of R, G, B, and W (white), or more subpixels.
[0049] The configurations of the display device (1) described above with reference to FIGS. 1 and FIG. 2 are merely examples of configurations that may be included in the display device (1) according to one embodiment of the present disclosure, and the present disclosure is not limited thereto. The display device (1) according to various embodiments of the present disclosure may include various configurations for performing various functions of the display device (1).
[0050] Unlike the embodiments described above, only a single display module (10) may be applied to the display device (1). The display module (10) can be installed and applied as a single unit in electronic products or battlefields that require various displays, such as TVs, wearable devices, portable devices, and PC monitors.
[0051] FIG. 3 is an enlarged cross-sectional view illustrating some components of a display device according to one embodiment of the present disclosure.
[0052] Referring to FIG. 3, a display module (10) included in a display device (1) according to one embodiment of the present disclosure may include a substrate (20). The substrate (20) may be provided to support other components of the display module (10). For example, various semiconductor devices (100), such as the aforementioned inorganic light-emitting element (110), may be mounted on the front surface of the substrate (20).
[0053] For example, the substrate (20) may have a roughly flat plate shape.
[0054] For example, the substrate (20) may include a transparent glass material with silicon dioxide (SiO2) as the main component. However, the material of the substrate (20) is not limited thereto, and in various embodiments, the substrate (20) may include materials such as polyimide, PET, and FR4.
[0055] The substrate (20) may include a thin film transistor (TFT) layer and various wirings (e.g., data lines, gate lines, power lines, etc.). For example, the thin film transistor layer of the substrate (20) may include a transistor circuit for individually controlling semiconductor devices (100), such as a plurality of inorganic light-emitting elements (110). The various wirings of the substrate (20) may transmit various electrical signals (e.g., data signals, gate signals, power signals) to the light-emitting elements (14).
[0056] The display device (1) may include a substrate electrode (30) provided on a substrate (20). For example, the substrate electrode (30) may be provided on the front surface of the substrate (20) on which the semiconductor device (100) is mounted. The substrate electrode (30) may be provided in multiple numbers.
[0057] The substrate electrode (30) may include at least one positive electrode (31) and at least one negative electrode (32). The positive electrode (31) and the negative electrode (32) may be arranged spaced apart from each other on the substrate (20).
[0058] The anode (31) may be an electrode provided to transmit a driving current supplied from a thin-film transistor layer of the substrate (20) to a plurality of inorganic light-emitting elements (110). The anode (31) may be electrically connected to a first electrode (111) included in each of the plurality of inorganic light-emitting elements (110). For example, the anode (31) may be provided in multiple numbers and electrically connected to the first electrode (111) of a red inorganic light-emitting element (110R), the first electrode (111) of a green inorganic light-emitting element (110G), and the first electrode (111) of a blue inorganic light-emitting element (110B), respectively. The anode (31) may be referred to as an anode.
[0059] The negative electrode (32) may be an electrode provided to allow driving current to flow out from the connector element (120) to be described later. The negative electrode (32) may be provided to connect the connector element (120) to be described later to the substrate (20). The negative electrode (32) may be electrically connected to the first electrode (121) included in the connector element (120) to be described later. The negative electrode (32) may be referred to as a cathode.
[0060] According to one embodiment, one cathode (32) can be electrically connected to a plurality of anodes (e.g., anodes (31) connected to the first electrode (111) of each of the red inorganic light-emitting element (110R), green inorganic light-emitting element (110G), and blue inorganic light-emitting element (110B) as a common electrode.
[0061] In the above description, an embodiment has been described in which the electrode (31) connected to the inorganic light-emitting element (110) among the substrate electrodes (30) is a positive electrode and the electrode (32) connected to the connector element (120) is a negative electrode; however, the present disclosure is not limited thereto, and in various embodiments, the electrode (31) connected to the inorganic light-emitting element (110) among the substrate electrodes (30) may be a negative electrode and the electrode (32) connected to the connector element (120) may be a positive electrode.
[0062] However, for the sake of convenience of explanation, the following description is based on an embodiment in which the electrode (31) connected to the inorganic light-emitting element (110) is the positive electrode and the electrode (32) connected to the connector element (120) is the negative electrode.
[0063] According to one embodiment, the display device (1) may include a semiconductor element (100). The semiconductor element (100) may be mounted on a substrate (20). The semiconductor element (100) may be mounted on the front surface of the substrate (20). The semiconductor element (100) may be connected to a substrate electrode (30).
[0064] The semiconductor device (100) may be provided in multiple quantities. For example, the semiconductor device (100) may include the aforementioned multiple inorganic light-emitting devices (110). For example, the semiconductor device (100) may include a connector device (120) that is electrically connected to the multiple inorganic light-emitting devices (110). For example, one connector device (120) may be electrically connected to the multiple inorganic light-emitting devices (110).
[0065] Each of the plurality of inorganic light-emitting elements (110) may include a first electrode (111) electrically connected to a substrate (20), a second electrode (112) opposite to the first electrode (111), and a semiconductor layer (113) through which current flows based on the application of a predetermined voltage between the first electrode (111) and the second electrode (112). According to one embodiment, the inorganic light-emitting element (110) may be configured as a vertical LED type in which the first electrode (111) and the second electrode (112) are arranged relative to each other in a direction perpendicular to the substrate (20). For example, the first electrode (111) and the second electrode (112) of the inorganic light-emitting element (110) may be arranged relative to each other in a front-back direction (X) parallel to the direction in which light is emitted. For example, the second electrode (112) of the inorganic light-emitting element (110) may be arranged in front of the first electrode (111).
[0066] The first electrode (111) may be disposed on one side adjacent to the substrate (20) of the semiconductor layer (113). The first electrode (111) may be disposed on the back side of the semiconductor layer (113). Hereinafter, the side of the semiconductor layer (113) where the first electrode (111) is provided is referred to as the first surface (113a) of the semiconductor layer (113). The first electrode (111) may be provided on the first surface (113a) of the semiconductor layer (113), and the first surface (113a) may be electrically connected to the substrate (20) through the first electrode (111).
[0067] The first electrode (111) of the inorganic light-emitting element (110) can be connected to a substrate electrode (30) provided on the substrate (20). The first electrode (111) can be connected to an anode (31) provided on the substrate (20). For example, a conductive layer (50) containing a material with high electrical conductivity can be formed between the first electrode (111) and the anode (31), and the first electrode (111) and the anode (31) can be connected to each other by the conductive layer (50). For example, the conductive layer (50) may include a plurality of conductive balls scattered within the adhesive layer (40) to be described later. The plurality of conductive balls are conductive particles surrounded by a thin insulating film, and can be configured so that the insulating film breaks upon pressure, thereby electrically connecting conductors to each other according to the direction of compression. During the process of mounting the inorganic light-emitting element (110) on the substrate (20), the insulating film of the conductive ball located between the first electrode (111) of the inorganic light-emitting element (110) and the substrate electrode (30) (e.g., anode (31)) may be broken, and the first electrode (111) and the substrate electrode (30) may be connected. The conductive ball of the conductive layer (50) may include various metal materials such as Au, Ni, and Pd as conductive particles.
[0068] The first electrode (111) may be a P-type electrode.
[0069] The first electrode (111) of the inorganic light-emitting element (110) may be referred to by terms such as 'first light-emitting element electrode'.
[0070] The second electrode (112) of the inorganic light-emitting element (110) may be positioned opposite to the first electrode (111). The second electrode (112) may be positioned on the opposite side of the substrate (20) of the semiconductor layer (113). The second electrode (112) may be positioned on the front surface of the semiconductor layer (113). Hereinafter, the side opposite to the first surface (113a) of the semiconductor layer (113) where the second electrode (112) is provided is referred to as the second surface (113b) of the semiconductor layer (113). The second electrode (112) may be provided on the second surface (113b) of the semiconductor layer (113), and the second surface (113b) may be electrically connected to the light-transmitting electrode layer (60) to be described later through the second electrode (112).
[0071] The second electrode (112) may be an N-type electrode.
[0072] According to one embodiment, the second electrode (112) may be composed of a plurality of electrodes. For example, the second electrode (112) may be provided in a plurality and disposed at the edge and the center of the inorganic light-emitting element (110), respectively.
[0073] The size of the second electrode (112) may be smaller than the size of the first electrode (111). However, it is not limited thereto, and in various embodiments, the size of the second electrode (112) may be larger than the size of the first electrode (111) or may be the same size as the first electrode (111).
[0074] The second electrode (112) of the inorganic light-emitting element (110) may also be referred to by terms such as 'second light-emitting element electrode'.
[0075] The semiconductor layer (113) of the inorganic light-emitting element (110) can be configured to allow current to flow based on the application of a predetermined voltage between the first surface (113a) and the second surface (113b). That is, the semiconductor layer (113) can be configured to allow current to flow based on the application of a predetermined voltage between the first electrode (111) and the second electrode (112). Even if electrodes are not connected to one or more of the first surface (113a) or the second surface (113b) of the semiconductor layer (113), current can flow in the semiconductor layer (113) if a predetermined voltage is applied between the first surface (113a) and the second surface (113b).
[0076] According to one embodiment, the semiconductor layer (113) of the inorganic light-emitting element (110) may include a first semiconductor layer (114), a second semiconductor layer (115), and an active layer (116) disposed between the first semiconductor layer (114) and the second semiconductor layer (115). The first semiconductor layer (114), the active layer (116), and the second semiconductor layer (115) may be arranged relative to each other in a direction perpendicular to the substrate (20). For example, the first semiconductor layer (114), the active layer (116), and the second semiconductor layer (115) may be arranged relative to each other in a forward-backward direction (X), which is the direction in which light is emitted. For example, the active layer (116) may be disposed in front of the first semiconductor layer (114), and the second semiconductor layer (115) may be disposed in front of the active layer (116).
[0077] The first semiconductor layer (114) may be a P-type semiconductor layer. For example, the first semiconductor layer (114) may be a P-GaN layer doped with a P-type material.
[0078] The first semiconductor layer (114) may be in contact with the first electrode (111). The first semiconductor layer (114) may be electrically connected to the substrate (20) through the first electrode (111). The first semiconductor layer (114) may be electrically connected to the substrate electrode (30) (e.g., anode (31)) of the substrate (20) through the first electrode (111). For example, a driving current from the anode (31) may flow to the first semiconductor layer (114) through the first electrode (111) of the inorganic light-emitting element (110). The first surface (113a) of the aforementioned semiconductor layer (113) may be a side surface of the first semiconductor layer (114) facing the substrate (20).
[0079] The second semiconductor layer (115) may be an N-type semiconductor layer. For example, the second semiconductor layer (115) may be an N-GaN layer doped with an N-type material.
[0080] The second semiconductor layer (115) may be in contact with the second electrode (112). The second semiconductor layer (115) may be electrically connected to the light-transmitting electrode layer (60) to be described later through the second electrode (112). The second surface (113b) of the aforementioned semiconductor layer (113) may be a side surface opposite to the substrate (20) of the second semiconductor layer (115).
[0081] The active layer (116) is disposed between the first semiconductor layer (114) and the second semiconductor layer (115) and can be configured to emit light by combining electrons and holes when a predetermined voltage is applied between the first surface (113a) and the second surface (113b) of the semiconductor layer (113). For example, the active layer (116) may be composed of a quantum well (MQW (Multiple-Quantum-Well) or SQW (Single-Quantum-Well), etc.). The active layer (116) may also be referred to as a 'light-emitting layer'.
[0082] The semiconductor layer (113) of the inorganic light-emitting element (110) may be referred to by terms such as 'light-emitting element semiconductor layer'. The first semiconductor layer (114) of the inorganic light-emitting element (110) may be referred to by terms such as 'first light-emitting element semiconductor layer'. The second semiconductor layer (115) of the inorganic light-emitting element (110) may be referred to by terms such as 'second light-emitting element semiconductor layer'. The active layer (116) of the inorganic light-emitting element (110) may be referred to by terms such as 'light-emitting element active layer'.
[0083] In the above description of the configurations of the inorganic light-emitting element (110), an embodiment in which the first electrode (111) is a P-type electrode and the second electrode (112) is an N-type electrode has been described; however, the present disclosure is not limited thereto, and in various embodiments, the first electrode (111) may be an N-type electrode and the second electrode (112) may be a P-type electrode. Furthermore, in the above description of the configurations of the inorganic light-emitting element (110), an embodiment in which the first semiconductor layer (114) is a P-type semiconductor and the second semiconductor layer (115) is an N-type semiconductor has been described; however, the present disclosure is not limited thereto, and in various embodiments, the first semiconductor layer (114) may be an N-type semiconductor and the second semiconductor layer (115) may be a P-type semiconductor.
[0084] However, for the sake of convenience of explanation, the following description is based on an embodiment in which the first electrode (111) is a P-type electrode and the second electrode (112) is an N-type electrode, and the first semiconductor layer (114) is a P-type semiconductor and the second semiconductor layer (115) is an N-type semiconductor.
[0085] According to one embodiment of the present disclosure, the display device (1) may include a connector element (120) mounted on a substrate (20) as a type of semiconductor element (100). The connector element (120) may be mounted on the front surface of the substrate (20). The connector element (120) may be electrically connected to the substrate (20). The connector element (120) may be electrically connected to a plurality of inorganic light-emitting elements (110).
[0086] A connector element (120) may include a first electrode (121) electrically connected to a substrate (20), a second electrode (122) opposite to the first electrode (121), and a semiconductor layer (123) through which current flows based on the application of a predetermined voltage between the first electrode (121) and the second electrode (122). According to one embodiment, the first electrode (121) and the second electrode (122) of the connector element (120) may be arranged relative to each other in a direction perpendicular to the substrate (20). For example, the first electrode (121) and the second electrode (122) of the connector element (120) may be arranged relative to each other in a front-back direction (X) parallel to the direction in which light is emitted. For example, the second electrode (122) of the connector element (120) may be arranged in front of the first electrode (121).
[0087] The first electrode (121) of the connector element (120) may be disposed on one side adjacent to the substrate (20) of the semiconductor layer (123). The first electrode (121) may be disposed on the back side of the semiconductor layer (123). The first electrode (121) may be provided on the first surface (123a) of the semiconductor layer (123) provided. The first surface (123a) of the semiconductor layer (123) may be electrically connected to the substrate (20) through the first electrode (121).
[0088] The first electrode (121) of the connector element (120) can be connected to a substrate electrode (30) provided on the substrate (20). The first electrode (121) can be connected to a negative electrode (32) provided on the substrate (20). For example, a conductive layer (50) (e.g., including a plurality of conductive balls) can be formed between the first electrode (121) and the negative electrode (32), and the first electrode (121) and the negative electrode (32) can be connected to each other by the conductive layer (50).
[0089] The first electrode (121) of the connector element (120) may also be referred to by terms such as 'first connector element electrode'.
[0090] The second electrode (122) of the connector element (120) may be positioned opposite to the first electrode (121). The second electrode (112) may be positioned on the opposite side of the substrate (20) of the semiconductor layer (123). The second electrode (122) may be positioned on the front surface of the semiconductor layer (123). In the following description, the second electrode (122) may be provided on the second surface (123b) of the semiconductor layer (123) on a surface opposite to the first surface (123a). The second surface (113b) of the semiconductor layer (123) may be electrically connected to the light-transmitting electrode layer (60), which will be described later, through the second electrode (112).
[0091] The second electrode (122) of the connector element (120) may also be referred to by terms such as 'second connector element electrode'.
[0092] The semiconductor layer (123) of the connector element (120) can be configured to allow current to flow based on the application of a predetermined voltage between the first surface (123a) and the second surface (123b). That is, the semiconductor layer (123) can be configured to allow current to flow based on the application of a predetermined voltage between the first electrode (121) and the second electrode (122). Even if electrodes are not connected to one or more of the first surface (123a) or the second surface (123b) of the semiconductor layer (123), current can flow in the semiconductor layer (123) if a predetermined voltage is applied between the first surface (123a) and the second surface (123b).
[0093] According to one embodiment, the display device (1) may include an adhesive layer (40). The adhesive layer (40) may be provided to fix the semiconductor device (100) to the substrate (20). For example, the adhesive layer (40) may include an anisotropic conductive film (ACF). For example, the adhesive layer (40) may include a black anisotropic conductive film (Black ACF) comprising a black polymer resin. For example, it may include a non-conductive film (NCF). For example, it may include a black non-conductive film (Black NCF) comprising a black polymer resin.
[0094] According to one embodiment, the adhesive layer (40) may be configured to allow electrical connection in a direction perpendicular to the substrate (20) (e.g., front-back direction (X)), but to be insulating in a direction horizontal to the substrate (20) (e.g., parallel to the YZ plane). For example, the adhesive layer (40) may be configured to have the aforementioned conductive layer (50) (e.g., conductive ball) as a conductive medium, and may have various other components as a conductive medium.
[0095] According to one embodiment, the display device (1) may include a light-transmitting electrode layer (60). The light-transmitting electrode layer (60) may be configured to allow light to pass through. The light-transmitting electrode layer (60) may be configured to have electrical conductivity so that current flows through it.
[0096] The light-transmitting electrode layer (60) may be positioned in front of the substrate (20). The light-transmitting electrode layer (60) may be positioned facing the substrate (20). The light-transmitting electrode layer (60) may be positioned parallel to the substrate (20). For example, the light-transmitting electrode layer (60) may have a plate shape approximately parallel to the substrate (20).
[0097] The light-transmitting electrode layer (60) can cover semiconductor devices (100), such as inorganic light-emitting elements (110) and connector elements (120). The light-transmitting electrode layer (60) can be placed on one side of the semiconductor device (100) opposite to the substrate (20). The light-transmitting electrode layer (60) can be placed in front of the semiconductor device (100).
[0098] The light-transmitting electrode layer (60) can cover the adhesive layer (40). The light-transmitting electrode layer (60) can be placed on one side of the adhesive layer (40) opposite to the substrate (20). The light-transmitting electrode layer (60) can be placed in front of the adhesive layer (40).
[0099] The light-transmitting electrode layer (60) can be electrically connected to the semiconductor device (100). For example, the light-transmitting electrode layer (60) can be electrically connected to the second electrode (112) of the inorganic light-emitting device (110). For example, the light-transmitting electrode layer (60) can be electrically connected to the second electrode (122) of the connector device (120). By the light-transmitting electrode layer (60), the second electrode (112) of each of the plurality of inorganic light-emitting devices (110) and the second electrode (122) of the connector device (120) can be electrically connected.
[0100] For example, the light-transmitting electrode layer (60) may include indium tin oxide (ITO), indium zinc oxide (IZO), nano wire paste, etc.
[0101] For example, the light-transmitting electrode layer (60) can be formed by various methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), low pressure CVD (LPCVD), sputtering, and atomic layer deposition (ALD).
[0102] In this way, the first electrode of the semiconductor device (100) (e.g., the first electrode (111) of the inorganic light-emitting device (110), the first electrode (121) of the connector device (120)) can be connected to the substrate (20) through the substrate electrode (30), and the second electrode of the semiconductor device (100) (e.g., the second electrode (112) of the inorganic light-emitting device (110), the second electrode (122) of the connector device (120)) can be connected to the light-transmitting electrode layer (60), and voltage can be applied to each semiconductor device (100) and current can flow through the control of the substrate (20) and the light-transmitting electrode layer (60).
[0103] According to one embodiment, the display device (1) may include a cover layer (70). The cover layer (70) may cover the light-transmitting electrode layer (60) from the front. The cover layer (70) may be disposed on the front surface of the light-transmitting electrode layer (60) opposite to the semiconductor device (100) to the adhesive layer (40).
[0104] For example, the cover layer (70) can be attached to the front surface of the light-transmitting electrode layer (60). The cover layer (70) can be attached to the front surface of the light-transmitting electrode layer (60) using an optical adhesive material (OCA) configured to allow light to pass through, including materials such as acrylic, silicone, and urethane.
[0105] For example, the cover layer (70) can be formed by depositing it on the front surface of the light-transmitting electrode layer (60).
[0106] The cover layer (70) can be provided to allow light to pass through. For example, the cover layer (70) can be provided transparently by including materials such as SiO2 (silicon dioxide), MgF2 (magnesium fluoride), Al2O3 (aluminum oxide), TiO2 (titanium dioxide), and ZrO2 (zirconium dioxide).
[0107] The cover layer (70) can protect components such as the light-transmitting electrode layer (60), semiconductor device (100), adhesive layer (40), and substrate (20) from external shocks, moisture, foreign substances, etc. The cover layer (70) may include a material having an appropriate reflectivity or refractive index to reduce the degree of reflection of external light incident from the front.
[0108] The configurations of the display device (1) according to one embodiment described above with reference to FIG. 3 are merely examples, and in various embodiments of the present disclosure, the display device (1) may include various configurations.
[0109] FIG. 4 is a drawing illustrating a substrate of a display device, a semiconductor device, and an inspection device for a semiconductor device according to one embodiment of the present disclosure. FIG. 5 is a drawing illustrating one side for inspecting a semiconductor device of a display device according to one embodiment of the present disclosure. FIG. 6 is a drawing illustrating a process of inspecting an inorganic light-emitting element of a display device using an inspection device according to one embodiment of the present disclosure. FIG. 7 is a drawing illustrating a process of inspecting a connector element of a display device using an inspection device according to one embodiment of the present disclosure.
[0110] Referring to FIGS. 4 through 7, according to one embodiment of the present disclosure, a semiconductor element (100) included in a display device (1) can be tested for functional defects using a test device (200). The test device (200) may be configured to test a semiconductor element (100) mounted on a substrate (20) of the display device (1). For example, the test device (200) may be configured to test for poor connection of the electrodes of the semiconductor element (100).
[0111] According to one embodiment, the inspection device (200) may include a head (210) and a probe (240) for inspecting a semiconductor device (100).
[0112] The head (210) can function as the main body of the inspection device (200). The head (210) can be configured to be movable. The head (210) can be movably supported by a rail (220) and can move along the rail (220). For example, the head (210) can be moved in a direction closer to or further away from the substrate (20) and the semiconductor device (100) mounted thereon. For example, the head (210) can be moved in a direction in which the substrate (20) extends or in a direction parallel to the substrate (20).
[0113] The probe (240) may be supported by the head (210). The probe (240) may be mounted on the head (210). The probe (240) may be fixed to the head (210). As the head (210) moves, the probe (240) may also move together. For example, the probe (240) may be able to move in a direction closer to or further away from the substrate (20) and the semiconductor device (100) mounted thereon. For example, the probe (240) may move between a position in contact with a second surface of the semiconductor device (100) (e.g., the first surface (113b) of the inorganic light-emitting element (110) or the second surface (123b) of the connector element (120)) and a position spaced apart from the second surface, thereby allowing the semiconductor device (100) to be inspected or the inspection to be terminated. For example, the probe (240) may be able to move in a direction in which the substrate (20) is extended or in a direction parallel to the substrate (20), thereby allowing each of the multiple semiconductor elements (100) to be inspected, or moving toward the semiconductor element (100) to be inspected to inspect the semiconductor element (100).
[0114] The detailed structure of the probe (240) and the method of inspecting the semiconductor device (100) using the probe (240) will be described later.
[0115] According to one embodiment, the inspection device (200) may include a stamp (230). The stamp (230) may be configured to pick up a semiconductor device (100) and drop the picked-up semiconductor device (100) onto a substrate (20).
[0116] The stamp (230) may be supported by the head (210). The stamp (230) may be mounted on the head (210). The stamp (230) may be fixed to the head (210). As the head (210) moves, the stamp (230) may also move together. As the stamp (230) can move together with the head (210), the inspection device (200) may pick up a semiconductor element (100) from a wafer (W, FIG. 14) using the stamp (230) as described below, and may move the picked-up semiconductor element (100) to a substrate (20) and drop it onto the substrate (20). The inspection device (200) including the stamp (230) may also be referred to as a 'mounting device' configured to mount the semiconductor element (100) of the display device (1) onto the substrate (20).
[0117] A method for inspecting a semiconductor device (100) using a stamp (230) will be described later.
[0118] As illustrated in FIGS. 4 to 7, according to one embodiment, the inspection device (200) may be configured to inspect the semiconductor element (100) in a state where the semiconductor element (100) is mounted on the substrate (20) through a first electrode (e.g., the first electrode (111) of the inorganic light-emitting element (110), the first electrode (121) of the connector element (120)) and electrically connected to the substrate (20), and the second surface of the semiconductor element (100) (e.g., the second surface (113b) of the semiconductor layer (113) of the inorganic light-emitting element (110), the second surface (123b) of the semiconductor layer (123) of the connector element (120)) is exposed and not covered by at least a portion of the second electrode (e.g., the second electrode (112) of the inorganic light-emitting element (110), the second electrode (122) of the connector element (120)) and the light-transmitting electrode layer (60). That is, in the inspection step of the semiconductor device (100), the semiconductor device (100) may be mounted on the substrate (20) with the second surface exposed and not covered.
[0119] In the inspection step of the semiconductor device (100), the probe (240) may be configured to be connected to an exposed second surface of the semiconductor device (100) (e.g., a second surface (113b) of the semiconductor layer (113) of the inorganic light-emitting device (110), a second surface (123b) of the semiconductor layer (123) of the connector device (120). In the inspection step of the semiconductor device (100), the probe (240) may come into contact with the exposed second surface of the semiconductor device (100) (e.g., a second surface (113b) of the semiconductor layer (113) of the inorganic light-emitting device (110), a second surface (123b) of the semiconductor layer (123) of the connector device (120), thereby allowing the probe (240) to be electrically connected to the semiconductor layer of the semiconductor device (100).
[0120] For example, as shown in FIG. 6, the probe (240) can come into contact with the exposed second surface of the semiconductor device (100) by moving the head (210) toward the substrate (20) to the semiconductor device (100).
[0121] Referring to FIG. 5, the exposed second surface of the semiconductor device (100) (e.g., the second surface (113b) of the semiconductor layer (113) of the inorganic light-emitting device (110), the second surface (123b) of the semiconductor layer (123) of the connector device (120)) may include a conductive region (C) in which current can be conducted. The conductive region (C) may be an exposed region of a material with high electrical conductivity, for example, GaN.
[0122] Referring to FIG. 5, the exposed second surface of the semiconductor device (100) (e.g., the second surface (113b) of the semiconductor layer (113) of the inorganic light-emitting device (110), the second surface (123b) of the semiconductor layer (123) of the connector device (120)) may include a non-conductive region (NC) in which current cannot be conducted. The non-conductive region (NC) may be a region covered by an insulating material, for example, silicon dioxide (SiO2).
[0123] When the probe (240) comes into contact with the conductive region (C), the probe (240) can be electrically connected to the semiconductor layer of the semiconductor device (100) (e.g., the semiconductor layer (113) of the inorganic light-emitting device (110), the semiconductor layer (123) of the connector device (120)), but when the probe (240) comes into contact with the non-conductive region (NC), the probe (240) and the semiconductor layer of the semiconductor device (100) may not be electrically connected to each other. Therefore, during the inspection step of the semiconductor device (100), the probe (240) can be configured to come into contact with the conductive region (C) among the second surfaces of the semiconductor device (100). For example, the inspection device (200) can detect the location of the conductive region (C) using a vision sensing system including a camera module, and control the operation of the probe (240) or the head (210) that moves it so that the probe (240) can come into contact with the conductive region (C).
[0124] Unlike as illustrated in FIG. 5, in various embodiments, the second surface of the semiconductor device (100) may consist only of a conductive region (C).
[0125] According to one embodiment, a method for inspecting a semiconductor device (100) may include the step of electrically connecting a probe (240) to a second surface of a semiconductor layer of the semiconductor device (100) as described above (e.g., a second surface (113b) of a semiconductor layer (113) of an inorganic light-emitting device (110), a second surface (123b) of a semiconductor layer (123) of a connector device (120), and then applying a predetermined voltage between a first electrode of the semiconductor device (100) (e.g., a first electrode (111) of an inorganic light-emitting device (110), a first electrode (121) of a connector device (120)) and the probe (240).
[0126] According to one embodiment, the inspection device (200) may include a power supply device (250) configured to apply a predetermined voltage between a first electrode of a semiconductor device (100) (e.g., a first electrode (111) of an inorganic light-emitting device (110), a first electrode (121) of a connector device (120)) and a probe (240).
[0127] The power supply (250) may be electrically connected to the probe (240) via a wire or various conductors. The power supply (250) may be directly connected to the first electrode of the semiconductor device (100) (e.g., the first electrode (111) of the inorganic light-emitting device (110), the first electrode (121) of the connector device (120)) via a wire or various conductors, or it may be connected to a circuit on a substrate (20) that is electrically connected to the first electrode.
[0128] According to one embodiment, a method for inspecting a semiconductor device (100) may include a step of inspecting whether current flows between the first electrode of the semiconductor device (100) and the probe (240) when a predetermined voltage is applied between the first electrode of the semiconductor device (100) (e.g., the first electrode (111) of an inorganic light-emitting device (110), the first electrode (121) of a connector device (120)) and the probe (240).
[0129] According to one embodiment, the inspection device (200) may include a detector (260) configured to inspect whether current flows between the first electrode of the semiconductor device (100) and the probe (240).
[0130] Referring to FIG. 6, an inspection device (200) may be configured to inspect an inorganic light-emitting element (110). The inorganic light-emitting element (110) may be electrically connected to a substrate (20) through a first electrode (111), and a second surface (113b) of the semiconductor layer (113) of the inorganic light-emitting element (110) may be exposed. A probe (240) may be connected to the second surface (113b) of the semiconductor layer (113) of the inorganic light-emitting element (110), and a power supply (250) may apply a predetermined voltage between the first electrode (111) and the probe (240). A detector (260) may inspect whether current flows through the semiconductor layer (113) between the first electrode (111) and the probe (240).
[0131] If the inorganic light-emitting element (110) is connected to the substrate (20) without defects through the first electrode (111), when a voltage is applied between the first electrode (111) and the probe (240) by the power supply (250), current can flow along the semiconductor layer (113) between the first electrode (111) and the probe (240), and the semiconductor layer (113) can emit light. If there is a defect in the connection between the first electrode (111) and the substrate (20), even if a voltage is applied between the first electrode (111) and the probe (240) by the power supply (250), current cannot flow between the first electrode (111) and the probe (240), and the semiconductor layer (113) may not emit light.
[0132] According to one embodiment, the detector (260) may include a detector (261) configured to detect whether light is emitted from the inorganic light-emitting element (110). The inspection device (200) may determine that the first electrode (111) of the inorganic light-emitting element (110) is connected to the substrate (20) without defects based on the fact that a voltage is applied between the first electrode (111) and the probe (240) and light emitted from the inorganic light-emitting element (110) is detected by the detector (261). The inspection device (200) may determine that there is a defect in the connection between the first electrode (111) of the inorganic light-emitting element (110) and the substrate (20) based on the fact that a voltage is applied between the first electrode (111) and the probe (240) and light emitted from the inorganic light-emitting element (110) is not detected by the detector (261).
[0133] For example, the detector (261) may include various types of devices capable of detecting light, such as a vision detection system including a camera module and an illuminance sensor.
[0134] According to one embodiment, the detector (260) may include an ammeter (262) configured to output a current value flowing between the first electrode (111) and the probe (240). The current value output by the ammeter (262) may include information regarding the magnitude of the current, or may include only information regarding whether or not current is flowing. The inspection device (200) may determine that the first electrode (111) of the inorganic light-emitting element (110) is connected to the substrate (20) without defects based on the fact that a voltage is applied between the first electrode (111) and the probe (240) and a current is detected by the ammeter (262). The inspection device (200) may determine that there is a defect in the connection between the first electrode (111) of the inorganic light-emitting element (110) and the substrate (20) based on the fact that a voltage is applied between the first electrode (111) and the probe (240) and a current is not detected by the ammeter (262).
[0135] According to one embodiment, the power supply (250) and the ammeter (262) may be included in a single integrated module, but are not limited thereto, and the power supply (250) and the ammeter (262) may be configured separately.
[0136] FIG. 6 illustrates an embodiment in which a detector (261) and an ammeter (262) are used together to check whether current flows between the first electrode (111) and the probe (240) of the inorganic light-emitting element (110), but the present disclosure is not limited thereto. In various embodiments, whether current flows between the first electrode (111) and the probe (240) of the inorganic light-emitting element (110) may be checked using only the detector (261), or using only the ammeter (262), or by various other methods.
[0137] Referring to FIG. 7, the inspection device (200) may be configured to inspect a connector element (120). The connector element (120) may be electrically connected to a substrate (20) through a first electrode (121), and a second surface (123b) of the semiconductor layer (123) of the connector element (120) may be exposed. A probe (240) may be connected to the second surface (123b) of the semiconductor layer (123) of the connector element (120), and a power supply (250) may apply a predetermined voltage between the first electrode (121) and the probe (240). A detector (260) may inspect whether current flows through the semiconductor layer (123) between the first electrode (121) and the probe (240).
[0138] If the connector element (120) is connected to the substrate (20) without defects through the first electrode (121), current may flow along the semiconductor layer (123) between the first electrode (121) and the probe (240) when voltage is applied between the first electrode (121) and the probe (240) by the power supply device (250). If there is a defect in the connection between the first electrode (121) and the substrate (20), current may not be able to flow between the first electrode (121) and the probe (240) even if voltage is applied between the first electrode (121) and the probe (240) by the power supply device (250).
[0139] According to one embodiment, an ammeter (262) may be used to check whether current flows between the first electrode (121) of the connector element (120) and the probe (240). The ammeter (262) may output a value of the current flowing between the first electrode (121) and the probe (240). The current value output by the ammeter (262) may include information about the magnitude of the current, or may include only information about whether current is flowing. Based on the fact that a voltage is applied between the first electrode (121) and the probe (240) and current is detected by the ammeter (262), the inspection device (200) may determine that the first electrode (121) of the connector element (120) is connected to the substrate (20) without defect. The inspection device (200) can determine that there is a defect in the connection between the first electrode (121) of the connector element (120) and the substrate (20) based on the fact that voltage is applied between the first electrode (121) and the probe (240) and no current is detected by the ammeter (262).
[0140] In the case of a vertical type semiconductor device such as a semiconductor device (100) included in a display device (1) according to one embodiment of the present disclosure, in which a first electrode and a second electrode are arranged in a direction perpendicular to each other with respect to a substrate (20), each of the plurality of semiconductor devices (100) may be individually connected to the substrate (20) through the first electrode, but in order for the second electrode to be connected to the light-transmitting electrode layer (60), a process of forming the light-transmitting electrode layer (60) in front of the plurality of semiconductor devices (100) is required, and at this time, the plurality of semiconductor devices (100) are simultaneously connected to the light-transmitting electrode layer (60). If a light-transmitting electrode layer (60) is formed in front of a plurality of semiconductor devices (100) and the light-transmitting electrode layer (60) is connected to each semiconductor device (100) through a second electrode, then an inspection of the semiconductor devices (100) is performed. In this case, even if a functional defect is found in any semiconductor device (100), it is not immediately possible to determine which electrode connection between the first electrode and the second electrode is defective, and there may be a problem in that the light-transmitting electrode layer (60) must be removed to repair or replace the semiconductor devices (100).
[0141] However, when inspecting a semiconductor device (100) using the apparatus and method according to the embodiment of the present disclosure, it is possible to inspect whether the first electrode is connected to the substrate (20) and the second electrode is not connected to the light-transmitting electrode layer (60), and since there is no need to remove the light-transmitting electrode layer (60) for repair or replacement of the semiconductor device (100), the processes of inspection, mounting, repair, and replacement of the semiconductor device (100) can be carried out efficiently.
[0142] FIG. 8 is a drawing illustrating an example of a probe included in an inspection device for a semiconductor device for a display device according to one embodiment of the present disclosure. FIG. 9 is a drawing illustrating the probe of FIG. 8 being pressed by a semiconductor device.
[0143] Referring to FIGS. 8 and 9, a probe (240) of an inspection device (200) according to one embodiment of the present disclosure may be provided to be deformable in length in a direction (hereinafter referred to as the 'first direction') that contacts a second surface of a semiconductor layer of a semiconductor device (100) (e.g., a second surface (113b) of a semiconductor layer (113) of an inorganic light-emitting device (110), a second surface (123b) of a semiconductor layer (123) of a connector device (120). As the probe (240) is provided to be deformable in length in the first direction, the probe (240) can be stably connected to the second surface of the semiconductor device (100). In particular, the probe (240) can be stably connected to the second surface of the semiconductor device (100) despite the step difference between the semiconductor devices (100), and damage to the semiconductor device (100) by the probe (240) may be prevented.
[0144] According to one embodiment, the probe (240) may include a fixed body (241), a probe pin (242) arranged to contact a second surface of a semiconductor layer (e.g., a second surface (113b) of a semiconductor layer (113) of an inorganic light-emitting element (110), a second surface (123b) of a semiconductor layer (123) of a connector element (120), and a support link (243) connecting the fixed body (241) and the probe pin (242) and supporting the probe pin (242) so that the probe pin (242) can move relative to the fixed body (241). The probe (240) may have a cantilever structure.
[0145] A conductive tip may be provided at the end of the probe pin (242). The conductive tip may be provided at one end facing the second surface of the semiconductor layer of the probe pin (242) (e.g., the second surface (113b) of the semiconductor layer (113) of the inorganic light-emitting element (110), the second surface (123b) of the semiconductor layer (123) of the connector element (120)). The conductive tip may be provided at one end facing away from the head (210) of the probe pin (242). The conductive tip may be provided at one end opposite to the side connected to the support link (243) of the probe pin (242). The probe pin (242) can be electrically connected to the semiconductor layer by the conductive tip contacting the second surface of the semiconductor layer (e.g., the second surface (113b) of the semiconductor layer (113) of the inorganic light-emitting element (110), the second surface (123b) of the semiconductor layer (123) of the connector element (120).
[0146] The fixed body (241) may be fixed to the head (210). The probe pin (242) may be movably provided with respect to the head (210). The support link (243) may be movably provided with respect to the fixed body (241) and the probe pin (242). For example, one end of the support link (243) may be connected to the fixed body (241), and the other end of the support link (243) may be connected to the probe pin (242), and the support link (243) may be rotatably connected to the fixed body (241) and the probe pin (242), respectively. For example, the support link (243) may be connected to one end of the fixed body (241) opposite to the head (210). For example, the support link (243) may be connected to one end of the probe pin (242) adjacent to the head (210).
[0147] The fixed body (241) and the probe pin (242) can each be extended in a first direction. The support link (243) can be extended in a second direction different from the first direction. Thus, even if the probe pin (242) continues to move in the same direction after the probe pin (242) approaches the semiconductor device (100) and contacts the second surface of the semiconductor layer of the semiconductor device (100), the probe pin (242) can move toward the head (210) in the first direction by rotating the support link (243), and the length of the probe (240) in the first direction can be reduced.
[0148] For example, the length of the probe pin (242) moving in the first direction toward the head (210) by being pressed by the second surface of the semiconductor layer is preferably 0.1 or less of the length in the first direction of the semiconductor device (100), but is not limited thereto.
[0149] According to one embodiment, the inspection device (200) may include a pressure sensor (245). The pressure sensor (245) may be configured to detect pressure applied to a probe pin (242). The pressure sensor (245) may detect pressure applied from a second surface when the probe pin (242) comes into contact with a second surface of a semiconductor layer (e.g., a second surface (113b) of a semiconductor layer (113) of an inorganic light-emitting element (110), a second surface (123b) of a semiconductor layer (123) of a connector element (120).
[0150] By using the pressure detected by the pressure sensor (245), the length of movement of the probe pin (242) in the first direction toward the head (210) can be adjusted by pressing it against the second surface of the semiconductor layer of the semiconductor device (100), and the probe pin (242) can be stably connected to the second surface of the semiconductor layer. In the process of electrically connecting the probe (240) to the second surface of the semiconductor layer of the semiconductor device (100), the inspection device (200) can move the probe (240) to the second surface of the semiconductor layer so that the output value of the pressure sensor (245) reaches a predetermined pressure, and when the output value of the pressure sensor (245) reaches a predetermined pressure, the movement of the probe (240) and the head (210) can be stopped.
[0151] FIG. 10 is a drawing illustrating an example of a probe included in an inspection device for a semiconductor device for a display device according to one embodiment of the present disclosure. FIG. 11 is a drawing illustrating the probe of FIG. 10 being pressed by a semiconductor device.
[0152] In describing an embodiment of the present disclosure with reference to FIGS. 10 and 11, the same reference numerals may be assigned to components identical to those described in the embodiments described with reference to FIGS. 1 to 9, and corresponding descriptions may not be repeated.
[0153] Referring to FIGS. 10 and 11, a probe (240) of an inspection device (200) according to one embodiment of the present disclosure may be configured to have a length that can be deformed in a first direction. According to one embodiment, the probe (240) may include a probe pin (242) configured to contact a second surface of a semiconductor layer (e.g., a second surface (113b) of a semiconductor layer (113) of an inorganic light-emitting element (110), a second surface (123b) of a semiconductor layer (123) of a connector element (120)) and an elastic member (244) that elastically supports the probe pin (242).
[0154] The elastic member (244) may be provided to be elastically deformable by an external force. The elastic member (244) may be provided to be elastically deformable in a first direction. For example, the elastic member (244) may include a compression spring.
[0155] One end of the elastic member (244) can be connected to the probe pin (242) to movably support the probe pin (242). For example, the elastic member (244) can be connected to the other end opposite to the end where the conductive tip of the probe pin (242) is provided.
[0156] The other end of the elastic member (244) opposite to the probe pin (242) can be fixed to the head (210). For example, the probe (240) may include a fixed body (241) mounted on the head (210), and the other end of the elastic member (244) may be connected to the fixed body (241). Alternatively, the elastic member (244) may be directly connected to the head (210).
[0157] With this structure, even if the probe pin (242) continues to move in the same direction after approaching the semiconductor device (100) and contacting the second surface of the semiconductor layer of the semiconductor device (100), the probe pin (242) can move toward the head (210) in the first direction and the length of the probe (240) in the first direction can be reduced.
[0158] For example, the length of the probe pin (242) being pressed by the second surface of the semiconductor layer and moving toward the head (210) in the first direction, i.e., the compression length of the elastic member (244), is preferably 0.1 or less of the length in the first direction of the semiconductor element (100), but is not limited thereto.
[0159] According to one embodiment, the inspection device (200) can adjust the travel length of the probe pin (242) using the aforementioned pressure sensor (245) and can ensure that the probe pin (242) is stably connected to the second surface of the semiconductor layer. In the process of electrically connecting the probe (240) to the second surface of the semiconductor layer of the semiconductor device (100), the inspection device (200) can move the probe (240) to the second surface of the semiconductor layer so that the output value of the pressure sensor (245) reaches a predetermined pressure, and when the output value of the pressure sensor (245) reaches a predetermined pressure, the movement of the probe (240) and the head (210) can be stopped.
[0160] FIG. 12 is a drawing illustrating an example of a process of inspecting a semiconductor element of a display device with an inspection device according to one embodiment of the present disclosure.
[0161] Referring to FIG. 12, according to one embodiment of the present disclosure, in order to electrically connect a power supply (250) or an ammeter (262) to a first electrode of a semiconductor element (100) (e.g., a first electrode (111) of an inorganic light-emitting element (110), a first electrode (121) of a connector element (120)), a power supply (250) or an ammeter (262) may be connected to a circuit on a substrate (20) that is electrically connected to the first electrode.
[0162] According to one embodiment, the inspection device (200) may further include a substrate connection probe (270) configured to be connectable to a substrate (20). The substrate connection probe (270) may be configured to be electrically connected to a first electrode of a semiconductor device (100) (e.g., a first electrode (111) of an inorganic light-emitting device (110), a first electrode (121) of a connector device (120)) when connected to the substrate (20). The substrate connection probe (270) may be electrically connected to a power supply (250) or an ammeter (262).
[0163] According to one embodiment, the substrate connection probe (270) can be mounted on the head (210). The substrate connection probe (270) can move together with the head (210).
[0164] The substrate connection probe (270) can be connected to the substrate (20) by contacting the front surface of the substrate (20), that is, the side surface where the semiconductor device (100) is mounted. In one embodiment, since an adhesive layer (40) may be provided on the front surface of the substrate (20), a process of trimming a portion of the adhesive layer (40) to expose a portion of the substrate (20) may be performed in order to contact the substrate connection probe (270) with the front surface of the substrate (20) before inspecting the semiconductor device (100). Hereinafter, the portion of the adhesive layer (40) that is trimmed and exposed is referred to as the trimming area (45).
[0165] When a trimming area (45) is formed in front of the substrate (20), the substrate connection probe (270) can access the front of the substrate (20) through the trimming area (45). When the substrate connection probe (270) is brought into contact with a portion of the substrate (20) exposed by the trimming area (45), the substrate connection probe (270) and the first electrode of the semiconductor device (100) can be electrically connected.
[0166] Thus, the power supply unit (250) can be electrically connected to the first electrode of the substrate (20) and the semiconductor device (100) through the substrate connection probe (270), and can be electrically connected to the second surface of the semiconductor layer of the semiconductor device (100) through the probe (240), so that a voltage can be applied between the first electrode of the semiconductor device (100) and the second surface of the semiconductor layer.
[0167] Additionally, the ammeter (262) can be electrically connected to the first electrode of the substrate (20) and the semiconductor device (100) through the substrate connection probe (270), and can be electrically connected to the second surface of the semiconductor layer of the semiconductor device (100) through the probe (240), so as to detect the current flowing between the first electrode of the semiconductor device (100) and the second surface of the semiconductor layer.
[0168] In FIG. 12, the probe (240) provided to be connected to the second surface of the semiconductor layer of the semiconductor device (100) has a cantilever structure as in the embodiments of FIG. 8 and FIG. 9, and the substrate connection probe (270) has a structure including an elastic member. However, in various embodiments of the present disclosure, the types of the probe (240) and the substrate connection probe (270) are not limited thereto. In various embodiments, both the probe (240) and the substrate connection probe (270) may have a cantilever structure, both the probe (240) and the substrate connection probe (270) may have a structure including an elastic member, or the probe (240) may have a structure including an elastic member and the substrate connection probe (270) may have a cantilever structure.
[0169] FIG. 13 is a drawing illustrating an example of a process of inspecting a semiconductor element of a display device with an inspection device according to one embodiment of the present disclosure.
[0170] Referring to FIG. 13, according to one embodiment of the present disclosure, in order to electrically connect a power supply (250) or an ammeter (262) to a first electrode of a semiconductor element (100) (e.g., a first electrode (111) of an inorganic light-emitting element (110), a first electrode (121) of a connector element (120)), a power supply (250) or an ammeter (262) may be connected to a circuit on a substrate (20) that is electrically connected to the first electrode.
[0171] According to one embodiment, the power supply (250) can be electrically connected to the second surface of the semiconductor layer of the semiconductor device (100) through a probe (240) and can be electrically connected to the first electrode of the semiconductor device (100) by being directly connected to the substrate (20) through a conductor such as a wire. For example, the power supply (250) can be directly connected to a circuit provided on the back surface of the substrate (20) (the surface opposite to the front surface of the substrate (20) on which the semiconductor device (100) is mounted) or the side surface of the substrate (20) (the surface connecting the front surface and the back surface of the substrate (20)) through a conductor such as a wire. By doing so, the power supply (250) can apply voltage between the first electrode of the semiconductor device (100) and the second surface of the semiconductor layer.
[0172] According to one embodiment, the ammeter (262) can be electrically connected to the second surface of the semiconductor layer of the semiconductor device (100) through a probe (240) and can be electrically connected to the first electrode of the semiconductor device (100) by being directly connected to the substrate (20) through a conductor such as a wire. For example, the ammeter (262) can be directly connected to a circuit provided on the back surface of the substrate (20) (the surface opposite to the front surface of the substrate (20) on which the semiconductor device (100) is mounted) or the side surface of the substrate (20) (the surface connecting the front surface and the back surface of the substrate (20)) through a conductor such as a wire. Thus, the ammeter (262) can detect the current flowing between the first electrode of the semiconductor device (100) and the second surface of the semiconductor layer.
[0173] According to an embodiment such as that of FIG. 13, unlike the embodiment of FIG. 12, the process of trimming the adhesive layer (40) can be omitted, thereby simplifying the inspection process and reducing inspection costs or time.
[0174] FIG. 14 is a diagram illustrating the step of picking up a semiconductor element for a display device from a wafer according to one embodiment of the present disclosure. FIG. 15 is a diagram illustrating the step of dropping a semiconductor element for a display device onto a substrate according to one embodiment of the present disclosure. FIG. 16 is a diagram illustrating the step of inspecting a semiconductor element for a display device according to one embodiment of the present disclosure.
[0175] Referring to FIGS. 14 to 16, a method for mounting a semiconductor element (100) of a display device (1) according to one embodiment on a substrate (20) is described.
[0176] Referring to FIG. 14, in the mounting method of a semiconductor device (100) according to the present embodiment, a step of picking up a semiconductor device (100) placed on a wafer (W) using a stamp (230) may be performed. The semiconductor device (100) placed on the wafer (W) may be a new semiconductor device before being mounted on a substrate (20).
[0177] Figure 14 illustrates an inorganic light-emitting element (110) being picked up by a stamp (230), but the semiconductor element (100) placed on a wafer (W) and picked up by the stamp (230) may also include a connector element (120).
[0178] According to one embodiment, the stamp (230) can press the semiconductor element (100) to be picked up and then pick up the semiconductor element (100) using an adhesive material or a vacuum device.
[0179] According to one embodiment, the stamp (230) may be configured to press the semiconductor device (100) to be picked up and then shake the semiconductor device (100) in a direction orthogonal to the direction of the press. By doing so, the stamp (230) can more efficiently separate the semiconductor device (100) from the wafer (W).
[0180] According to one embodiment, the inspection device (200) may include a first semiconductor device detector configured to detect a semiconductor device (100) on a wafer (W). The first semiconductor device detector may be configured to detect the position of the semiconductor device (100) on the wafer (W). For example, the first semiconductor device detector may include a vision detection system including a camera module, etc. This can improve the pickup accuracy of the semiconductor device (100). For example, the first semiconductor device detector may be provided in a head (210).
[0181] Referring to FIG. 15, when a semiconductor element (100) is picked up by a stamp (230), a head (210) can move along a rail (220) over a substrate (20). The head (210) can move to a position where the first surface to the first electrode of the semiconductor layer of the semiconductor element (100) faces the substrate (20). The head (210) can move until the picked-up semiconductor element (100) is positioned at a predetermined position on the substrate (20) and then stop. Afterward, the head (210) can move toward the front of the substrate (20), and the stamp (230) can drop the picked-up semiconductor element (100) onto the substrate (20).
[0182] According to one embodiment, the inspection device (200) may include a second semiconductor element detector configured to detect the position where the picked-up semiconductor element (100) is attached to the stamp (230). For example, the second semiconductor element detector may include a vision detection system including a camera module, etc. By using the second semiconductor element detector, the inspection device (200) can verify whether the picked-up semiconductor element (100) is attached to the stamp (230) at an accurate position and can correct the position so that the picked-up semiconductor element (100) can be dropped more accurately at a predetermined position on the substrate (20). For example, the second semiconductor element detector may be positioned in the path where the head (210) moves from the wafer (W) toward the substrate (20).
[0183] According to one embodiment, in the step of dropping a semiconductor device (100) onto a substrate (20), the stamp (230) may be configured to press the semiconductor device (100) toward the substrate (20) so that the semiconductor device (100) can be more firmly connected to the substrate (20). For example, the stamp (230) is approximately 0.1 to 10 gf / cm 2 It is preferable to apply pressure to the semiconductor device (100) with the pressure, but is not limited thereto. For example, the inspection device (200) may further include a pressure sensor configured to measure the pressure applied by the stamp (230) to the semiconductor device (100). For example, the pressure sensor may be provided in the head (210).
[0184] Prior to the semiconductor device (100) being dropped onto the substrate (20), a step of applying a conductive material onto the substrate electrode (30) of the substrate (20) may be performed. However, in the case of a metallic bonding method in which solder is provided on the first electrode of the semiconductor device (100) (e.g., the first electrode (111) of the inorganic light-emitting device (110), the first electrode (121) of the connector device (120)), the step of applying the conductive material may be omitted.
[0185] As illustrated in FIG. 15, in the step of dropping a semiconductor device (100) onto a substrate (20), a first electrode of the semiconductor device (100) (e.g., the first electrode (111) of an inorganic light-emitting device (110), the first electrode (121) of a connector device (120)) may be connected to a substrate electrode (30), and the connection portion may be cured using a curing device (280). By doing so, the semiconductor device (100) can be mounted on the substrate (20).
[0186] When a semiconductor device (100) is mounted on a substrate (20), it can be electrically connected to a semiconductor layer (e.g., a semiconductor layer (113) of an inorganic light-emitting device (110), a semiconductor layer (123) of a connector device (120)) and the substrate (20) through a first electrode of the semiconductor device (100) (e.g., a first electrode (111) of an inorganic light-emitting device (110), a first electrode (121) of a connector device (120)).
[0187] Referring to FIG. 16, after the semiconductor device (100) is mounted on the substrate (20), the inspection steps of the semiconductor device (100) described above can be performed.
[0188] In the inspection step, the probe (240) may be electrically connected to a second surface of the semiconductor device (100) (e.g., a second surface (113b) of the semiconductor layer (113) of the inorganic light-emitting device (110), a second surface (123b) of the semiconductor layer (123) of the connector device (120). In the inspection step, the power supply (250) may apply a predetermined voltage between the first electrode of the semiconductor device (100) (e.g., a first electrode (111) of the inorganic light-emitting device (110), a first electrode (121) of the connector device (120)) and the probe (240). In the inspection step, a detector (260) (e.g., a detector (261) or an ammeter (262)) can inspect whether current flows between the first electrode of the semiconductor device (100) (e.g., the first electrode (111) of the inorganic light-emitting device (110), the first electrode (121) of the connector device (120)) and the probe (240).
[0189] Using the method of mounting the semiconductor device (100) described above, the manufacturing of the display device (1) or the repair and replacement process of the semiconductor device (100) can be performed, and at the same time, the functional inspection of the semiconductor device (100) can also be performed.
[0190] FIG. 17 is a drawing illustrating an inspection device for a semiconductor element for a display device according to one embodiment of the present disclosure. FIG. 18 is a drawing illustrating an inspection device for a semiconductor element for a display device according to one embodiment of the present disclosure.
[0191] Referring to FIGS. 17 and 18, an inspection device (200) according to one embodiment of the present disclosure may include a plurality of probes (240). The inspection device (200) may inspect a plurality of semiconductor devices (100) by including a plurality of probes (240). The plurality of probes (240) may be configured to be connectable to a second surface of a semiconductor layer included in the plurality of semiconductor devices (100).
[0192] A plurality of probes (240) may be arranged to correspond to an arrangement of a plurality of semiconductor elements (100) on a substrate (20). For example, a plurality of probes (240) may be arranged in a roughly matrix form.
[0193] Multiple probes (240) can be mounted on a single head (210).
[0194] The inspection device (200) can simultaneously inspect multiple semiconductor devices (100) using multiple probes (240), thereby reducing process time. Alternatively, the inspection device (200) can simultaneously apply voltage to multiple semiconductor devices (100), particularly multiple inorganic light-emitting devices (110), using multiple probes (240), so that the brightness between the inorganic light-emitting devices (110) can be compared.
[0195] According to one embodiment, a stamp (230) may also be mounted on the head (210) of the inspection device (200) along with a plurality of probes (240). According to one embodiment, the number of stamps (230) (e.g., 1) may be less than the number of probes (240), but in various embodiments, the number of stamps (230) is not limited thereto.
[0196] In various embodiments, the stamp (230) can be mounted at various locations on the head (210).
[0197] For example, as shown in FIG. 17, the stamp (230) may be positioned between a plurality of probes (240). For example, the stamp (230) may be positioned adjacent to the center of the head (210).
[0198] For example, as shown in FIG. 18, the stamp (230) may be positioned outside of the plurality of probes (240). For example, the stamp (230) may be positioned adjacent to the edge of the head (210).
[0199] FIG. 19 is a drawing illustrating an inspection device for a semiconductor element for a display device according to one embodiment of the present disclosure.
[0200] Referring to FIG. 19, an inspection device (200) according to one embodiment of the present disclosure may include a plurality of probes (240). The plurality of probes (240) may be mounted on a head (210). Meanwhile, unlike the preceding embodiments, a stamp (230) may be provided separately and not mounted together with the head (210) on which the plurality of probes (240) are mounted.
[0201] A testing device for a semiconductor device for a display device according to one embodiment of the present disclosure may be a device configured to test a semiconductor device comprising a semiconductor layer that is mounted on a substrate of a display device, has a first surface electrically connected to the substrate by an electrode, and a second surface opposite to the first surface, and is configured to allow current to flow based on the application of a predetermined voltage between the first surface and the second surface. The testing device may include a probe configured to be connectable to the second surface of the semiconductor layer, a power supply configured to apply the predetermined voltage between the electrode electrically connected to the substrate and the probe, and a detector configured to test whether current flows between the electrode and the probe.
[0202] The semiconductor device may include an inorganic light-emitting device comprising a first semiconductor layer having a first surface electrically connected to the substrate by the electrode, a second semiconductor layer disposed to face the first semiconductor layer, and an active layer configured to emit light based on the application of a voltage between the first semiconductor layer and the second semiconductor layer. The probe may be provided to be connectable to the second surface provided on the second semiconductor layer.
[0203] The detector may include a detector configured to detect light emitted from the inorganic light-emitting element.
[0204] The detector may include an ammeter configured to output a current value flowing between the electrode and the probe.
[0205] The probe may be movably positioned between a first position spaced apart from the second surface of the semiconductor layer and a second position in contact with the second surface of the semiconductor layer.
[0206] The above probe may be configured so that its length can be deformed in a direction in contact with the second surface of the semiconductor layer.
[0207] The probe may include a fixed body, a probe pin arranged to contact the second surface of the semiconductor layer, and a support link connecting the fixed body and the probe pin and supporting the probe pin so that the probe pin can move relative to the fixed body.
[0208] Each of the above-mentioned fixed body and the above-mentioned probe pin may extend in a first direction in which the probe pin contacts the second surface of the semiconductor layer. The above-mentioned support link may extend in a second direction different from the first direction.
[0209] The probe may include a probe pin arranged to contact the second surface of the semiconductor layer, and an elastic member arranged to elastically support the probe pin.
[0210] The probe may include a pressure sensor configured to detect pressure applied from the second surface when the probe comes into contact with the second surface of the semiconductor layer.
[0211] The inspection device may further include a head configured to be movable, and a stamp mounted on the head and configured to selectively pick up or drop the semiconductor device. The probe may be mounted on the head.
[0212] The above probe may include a plurality of probes configured to be connectable to the second surface of a plurality of semiconductor devices.
[0213] The above inspection device may further include a substrate connection probe that is configured to be connectable to the substrate and is configured to be electrically connected to the electrode when connected to the substrate.
[0214] A method for inspecting a semiconductor device for a display device according to one embodiment of the present disclosure may be a method for inspecting a semiconductor device comprising a semiconductor layer that is mounted on a substrate of a display device, has a first surface electrically connected to the substrate by an electrode, and a second surface opposite to the first surface, and is configured to allow current to flow based on the application of a predetermined voltage between the first surface and the second surface. The inspection method may include electrically connecting a probe to the second surface of the semiconductor layer, applying the predetermined voltage between the electrode electrically connected to the substrate and the probe, and inspecting whether current flows between the electrode and the probe.
[0215] The semiconductor device may include an inorganic light-emitting device comprising: a first semiconductor layer having a first surface electrically connected to the substrate by the electrode; a second semiconductor layer disposed to face the first semiconductor layer and having a second surface; and an active layer configured to emit light based on the application of a voltage between the first semiconductor layer and the second semiconductor layer. Testing whether current flows between the electrode and the probe may include testing whether light is emitted from the inorganic light-emitting device.
[0216] Checking whether current flows between the electrode and the probe may include checking whether current flows between the electrode and the probe using an ammeter configured to output a current value flowing between the electrode and the probe.
[0217] The probe may include a probe pin arranged to contact the second surface of the semiconductor layer and a pressure sensor configured to detect pressure applied to the probe pin. Electrically connecting the probe to the second surface of the semiconductor layer may include moving the probe to the second surface of the semiconductor layer so that the output value of the pressure sensor reaches a predetermined pressure.
[0218] The above inspection method may further include connecting a power supply to a circuit on the substrate that is electrically connected to the electrode.
[0219] The above inspection method may further include trimming a portion of an adhesive layer provided on one side of the substrate where the semiconductor device is mounted to expose a region of the substrate; and contacting a substrate connection probe to the exposed region of the substrate to electrically connect the substrate connection probe and the electrode.
[0220] A method for mounting a semiconductor device for a display device according to one embodiment of the present disclosure may be a method for mounting a semiconductor device comprising a semiconductor layer through which current flows based on the application of a predetermined voltage between a first electrode and a second electrode onto a substrate. The mounting method may include picking up the semiconductor device placed on a wafer using a stamp; dropping the picked-up semiconductor device onto the substrate such that a first surface of the semiconductor device to be connected to the first electrode faces the substrate; electrically connecting the semiconductor layer to the substrate through the first electrode; electrically connecting a probe to a second surface of the semiconductor device opposite to the first surface of the semiconductor device and to be connected to the second electrode; applying the predetermined voltage between the first electrode and the probe; and detecting whether current flows between the first electrode and the probe.
[0221] According to the concept of the present disclosure, the inspection device can efficiently inspect for defects in a semiconductor device by applying a voltage between an electrode provided on a first surface on the substrate side of a semiconductor layer included in the semiconductor device and a second surface opposite to the first surface, and by inspecting whether current flows in the semiconductor layer.
[0222] According to the concept of the present disclosure, the inspection device can inspect whether current flows in the semiconductor layer when only a first electrode connected to a substrate is connected to the semiconductor layer included in the semiconductor device and a second electrode opposite to it is not connected, thereby easily identifying where in the semiconductor device a connection failure has occurred.
[0223] One aspect of the present disclosure is that the inspection device includes a stamp and a probe mounted on a head, and can simultaneously perform defect inspection of the semiconductor device using the probe while mounting a new semiconductor device on a substrate using the stamp.
[0224] The effects according to the concept of the present disclosure are not limited to the effects mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description below.
[0225] Specific embodiments have been illustrated and described above. However, the invention is not limited to the embodiments described above, and those skilled in the art may make various modifications without departing from the essence of the technical concept of the invention as described in the following claims. Explanation of the symbols
[0226] 1; Display device 10; Display module 20; substrate 30; substrate electrode 40; adhesive layer 50; Conductive layer 60; light-transmitting electrode layer 70; cover layer 100; semiconductor device 110; Inorganic light-emitting element 120; connector element 200; inspection device 210; Head 220; rail 230; Stamp 240; probe 250; Power supply 260; Detector 270; board connection probe 280; curing device
Claims
Claim 1 An inspection device for a semiconductor element for a display device, comprising: a probe configured to be connectable to the second surface of the semiconductor layer, the semiconductor layer having a first surface electrically connected to the substrate by an electrode and a second surface opposite to the first surface, and configured to allow current to flow based on the application of a predetermined voltage between the first surface and the second surface; a power supply configured to apply the predetermined voltage between the electrode electrically connected to the substrate and the probe; and a detector configured to inspect whether current flows between the electrode and the probe. Claim 2 In claim 1, the semiconductor device comprises an inorganic light-emitting element including a first semiconductor layer having a first surface electrically connected to the substrate by the electrode, a second semiconductor layer disposed to face the first semiconductor layer, and an active layer configured to emit light based on the application of a voltage between the first semiconductor layer and the second semiconductor layer, and the probe is a test device for a semiconductor device for a display device configured to be connectable to the second surface provided on the second semiconductor layer. Claim 3 In paragraph 2, the inspection device for a semiconductor element for a display device comprises: a detector configured to detect light emitted from the inorganic light-emitting element. Claim 4 In claim 1, the detector comprises an ammeter configured to output a current value flowing between the electrode and the probe; an inspection device for a semiconductor element for a display device. Claim 5 In claim 1, the inspection device for a semiconductor element for a display device, wherein the probe is movably arranged between a first position spaced apart from the second surface of the semiconductor layer and a second position in contact with the second surface of the semiconductor layer. Claim 6 In claim 1, the inspection device for a semiconductor element for a display device is configured such that the probe is configured to have a length that can be deformed in a direction in contact with the second surface of the semiconductor layer. Claim 7 In claim 6, the probe comprises: a fixed body; a probe pin arranged to contact the second surface of the semiconductor layer; and a support link connecting the fixed body and the probe pin and supporting the probe pin so that the probe pin can move relative to the fixed body; an inspection device for a semiconductor element for a display device. Claim 8 In claim 7, the inspection device for a semiconductor element for a display device, wherein each of the fixed body and the probe pin extends in a first direction in which the probe pin contacts the second surface of the semiconductor layer, and the support link extends in a second direction different from the first direction. Claim 9 In claim 6, the probe comprises: a probe pin arranged to contact the second surface of the semiconductor layer; and an elastic member arranged to elastically support the probe pin; an inspection device for a semiconductor element for a display device. Claim 10 In claim 1, the inspection device for a semiconductor element for a display device comprises: a pressure sensor configured to detect pressure applied from the second surface when the probe comes into contact with the second surface of the semiconductor layer. Claim 11 In claim 1, the device further comprises: a head configured to be movable; and a stamp mounted on the head and configured to selectively pick up or drop the semiconductor element, wherein the probe is a semiconductor element inspection device for a display device mounted on the head. Claim 12 In claim 11, the inspection device for a semiconductor device for a display device comprises a plurality of probes configured to be connectable to the second surface of a plurality of semiconductor devices. Claim 13 A test device for a semiconductor device for a display device, further comprising: a substrate connection probe provided to be connectable to the substrate and provided to be electrically connected to the electrode when connected to the substrate in claim 1. Claim 14 A method for inspecting a semiconductor element for a display device, comprising a semiconductor layer mounted on a substrate of a display device, the semiconductor layer having a first surface electrically connected to the substrate by an electrode and a second surface opposite to the first surface, and configured to allow current to flow based on the application of a predetermined voltage between the first surface and the second surface, wherein the method comprises: electrically connecting a probe to the second surface of the semiconductor layer; applying the predetermined voltage between the electrode electrically connected to the substrate and the probe; and inspecting whether current flows between the electrode and the probe. Claim 15 In claim 14, the semiconductor device comprises an inorganic light-emitting element comprising a first semiconductor layer having a first surface electrically connected to the substrate by the electrode, a second semiconductor layer disposed facing the first semiconductor layer and having the second surface, and an active layer configured to emit light based on the application of a voltage between the first semiconductor layer and the second semiconductor layer, and testing whether current flows between the electrode and the probe comprises testing whether light is emitted from the inorganic light-emitting element; a method for testing a semiconductor device for a display device. Claim 16 In claim 14, the method of inspecting whether current flows between the electrode and the probe comprises inspecting whether current flows between the electrode and the probe using an ammeter configured to output a current value flowing between the electrode and the probe. Claim 17 In claim 14, the probe comprises a probe pin arranged to contact the second surface of the semiconductor layer and a pressure sensor configured to detect pressure applied to the probe pin, and electrically connecting the probe to the second surface of the semiconductor layer comprises moving the probe to the second surface of the semiconductor layer so that the output value of the pressure sensor reaches a predetermined pressure; a method for inspecting a semiconductor element for a display device. Claim 18 A method for inspecting a semiconductor device for a display device, further comprising, in claim 14, connecting a power supply to a circuit on the substrate electrically connected to the electrode. Claim 19 In claim 14, the inspection device for a semiconductor device for a display device further comprises trimming a portion of an adhesive layer provided on one side of the substrate on which the semiconductor device is mounted to expose one region of the substrate; and contacting a substrate connection probe to the exposed one region of the substrate to electrically connect the substrate connection probe and the electrode. Claim 20 A method for mounting a semiconductor device for a display device on a substrate, comprising a semiconductor layer through which current flows based on the application of a predetermined voltage between a first electrode and a second electrode, the method comprising: picking up the semiconductor device placed on a wafer using a stamp; dropping the picked-up semiconductor device onto the substrate such that a first surface of the semiconductor device to be connected to the first electrode faces the substrate; electrically connecting the semiconductor layer to the substrate through the first electrode; electrically connecting a probe to a second surface of the semiconductor device opposite to the first surface of the semiconductor device and to be connected to the second electrode; applying the predetermined voltage between the first electrode and the probe; and detecting whether current flows between the first electrode and the probe.