Substrate processing apparatus

Abstract

(Task) To improve productivity while reducing the occurrence of scratches, etc. (Solution) The apparatus comprises a substrate holding head (20), a substrate holding part (22) for holding a substrate (W), a substrate (31), a catalyst layer (32) having a substrate contact surface (32a) formed on the surface of the substrate (31) facing the substrate (W) and in contact with the processing surface (W1) of the substrate (W), a catalyst pad (30) in which the area of ​​the substrate contact surface (32a) is larger than the area of ​​the processing surface (W1), a pad holding part (40) for fixing and holding the catalyst pad (30) within a process chamber (10), a supply discharge part (60) for supplying an etching treatment agent to at least the process chamber (10), a moving mechanism (50) for moving the substrate holding head (20) relative to the catalyst pad (30) in a contacting direction, and a control part (200). The supply discharge part (60) is configured such that, in the presence of the treatment agent supplied within the process chamber (10), the processing surface (W1) of the substrate (W) is catalytic A new treatment agent is supplied to the substrate contact surface (32a) of the pad (30) while under pressure.

Description

Technology Field

[0001] The present invention relates to a substrate processing device. Background Technology

[0002] Chemical-Mechanical Polishing (CMP) is a technology generally used in the substrate planarization process of semiconductor devices. Although CMP technology is a wet polishing method that combines chemical action and mechanical polishing, there are concerns regarding the impact on product quality caused by scratches from mechanical polishing or particles from the slurry.

[0003] Patent Document 1 describes a substrate processing apparatus for planarizing a substrate to be processed using Catalyst-Referred Etching (CARE), which is one of the etching methods utilizing a catalyst. The substrate processing apparatus of Patent Document 1 includes a CARE head having a pad holding portion (substrate holding portion) for holding a substrate and a catalyst holding portion for holding a catalyst. The catalyst holding portion includes a high-rigidity base plate, a piezoelectric element disposed adjacent to the base plate, a high-rigidity catalyst holding base disposed adjacent to the piezoelectric element, and a catalyst held in the catalyst holding base. The substrate processing apparatus further includes a control device for controlling an operating voltage applied to the piezoelectric element. Prior art literature

[0004] Japanese Published Patent Application No. 2018-174229 The problem to be solved

[0005] The substrate processing device of Patent Document 1 controls the distance between the catalyst and the surface to be processed of the substrate using a piezoelectric element and polishes the surface to be processed using the CARE method, so relative sliding occurs between the catalyst and the surface to be processed due to mechanical vibration of the catalyst. As a result, the device of Patent Document 1 is at risk of scratches, etc., caused by friction between the catalyst surface and the surface to be processed.

[0006] In addition, the device of Patent Document 1 has a contact area between the CARE head and the surface to be processed that is smaller than the area of ​​the surface to be processed of the substrate. Therefore, in order to process the entire surface to be processed, the device of Patent Document 1 requires moving the CARE head multiple times within the processing area, so there is room for improvement in terms of productivity.

[0007] In addition, since etching using catalysts such as the CARE method is performed in the presence of a processing agent, the concentration of the processing solution between the catalyst and the substrate gradually decreases from the start of the process. As a result, there is a problem that the wet etching using catalysts gradually slows down and takes time to process.

[0008] The present invention has been made in consideration of the above-mentioned problem, and specifically, provides a substrate processing device capable of improving productivity while reducing the occurrence of scratches, etc. means of solving the problem

[0009] The above task is achieved by any one of the following means (1) to (12).

[0010] (1) A substrate processing apparatus for etching a processing surface of a substrate to be processed in a process chamber, comprising: a substrate holding head; a substrate holding part provided in the substrate holding head and holding the substrate; a catalyst pad including a substrate and a substrate contact surface formed on the surface of the substrate facing the substrate and contacting the processing surface of the substrate; a pad holding part that fixes and holds the catalyst pad in the process chamber; a supply discharge part that supplies an etching agent to at least the process chamber; a moving mechanism that moves the substrate holding head in a contact and separation direction that is close to and farther apart from at least the catalyst pad; and a control part. The catalyst pad has a substrate contact surface area larger than the processing surface area, and the supply discharge part supplies a new processing agent to the substrate contact surface while the processing surface of the substrate is pressed against the substrate contact surface of the catalyst pad in the presence of the processing agent supplied in the process chamber.

[0011] (2) The substrate holding head is fixed in position while the processing surface of the substrate is in contact with the substrate contact surface of the catalyst layer, as described in (1).

[0012] (3) A substrate processing apparatus described in (1) or (2), wherein the flatness of the substrate contact surface is higher than the flatness of the processing surface.

[0013] (4) A substrate processing device described in any one of (1) to (3), wherein the supply discharge unit comprises a first supply discharge unit that supplies the processing agent to the process chamber and a second supply discharge unit that supplies the processing agent to the substrate contact surface through the interior of the catalyst pad.

[0014] (5) The pad holding portion has a fixed surface that is fixed to the process chamber, and the second supply discharge portion includes a plurality of supply holes that communicate the substrate contact surface and the fixed surface, a supply pipe that supplies the processing agent to the supply holes, and a flow control portion that controls the amount of the processing agent supplied to the supply holes, the substrate processing device described in (4).

[0015] (6) A substrate processing device described in any one of (1) to (5), wherein the substrate holding head has a thickness measuring part for measuring the thickness of the substrate.

[0016] (7) A substrate processing device described in any one of (1) to (6), wherein the moving mechanism comprises an adjustment driving unit that moves the substrate holding head in the folding direction, a plane direction perpendicular to the folding direction, and a rotational direction with the folding direction as the rotation axis.

[0017] (8) The control unit moves the substrate holding head in a separation direction to separate the substrate contact surface from the processing surface, moves the substrate holding head in at least one of the planar direction and the rotational direction, and then moves the substrate holding head in a contact direction to bring the substrate contact surface into contact with the processing surface, the substrate processing device described in (7).

[0018] (9) A substrate processing device described in (7) or (8), wherein a transfer pattern of a predetermined shape is formed on the surface of the substrate contact surface, and the control unit drives the moving mechanism so that an arbitrary pattern shape according to the transfer pattern is formed on the processing surface.

[0019] (10) A substrate processing apparatus described in any one of (1) to (9), having a conditioning mechanism for conditioning the substrate contact surface of the catalyst pad.

[0020] (11) A substrate processing apparatus described in any one of (1) to (10), wherein the catalyst layer is formed of a precious metal or carbon material.

[0021] (12) A substrate processing device described in any one of (1) to (10), wherein the control unit controls the amount of the processing agent supplied from the supply discharge unit based on the thickness information of the substrate measured by the thickness measuring unit. Effects of the invention

[0022] According to the present invention, it is possible to improve productivity while reducing the occurrence of scratches, etc. Brief explanation of the drawing

[0023] FIG. 1 is a schematic diagram illustrating the configuration of a substrate processing device according to a first embodiment of the present invention. FIG. 2 is a functional block diagram of the supply discharge section of a substrate processing device according to the first embodiment. FIG. 3a is a diagram illustrating the flow of the planarization process of a substrate processing device according to a first embodiment. FIG. 3b is a diagram illustrating the flow of the planarization process of a substrate processing device according to the first embodiment. FIG. 3c is a diagram illustrating the flow of the planarization process of a substrate processing device according to the first embodiment. FIG. 3d is a schematic diagram illustrating an example of a reaction process of wet etching using the catalyst used in the present invention. Figure 4a is a drawing illustrating an example of the shape of a substrate. FIG. 4b is a drawing illustrating another example of the shape of a substrate. FIG. 4c is a drawing illustrating another shape example of a substrate. Figure 5 is a drawing illustrating an example of the configuration of a conditioning mechanism. FIG. 6 is a flowchart illustrating a series of flattening processes performed in a substrate processing apparatus according to a first embodiment. Figures 7a (a) to (c) are schematic diagrams illustrating the operation of a substrate processing apparatus according to a first embodiment. Figures 7b (d) and (e) are schematic diagrams illustrating the operation of a substrate processing apparatus according to a first embodiment. FIG. 8 is a schematic diagram of a substrate processing apparatus according to a second embodiment of the present invention. FIG. 9 is a functional block diagram of the supply discharge section of a substrate processing device according to a second embodiment. FIG. 10a is a drawing illustrating an example of the formation of a supply hole. FIG. 10b is a drawing illustrating another example of the formation of a supply hole. FIG. 11a is a drawing illustrating the flattening treatment of a surface irregularity portion that has entered the supply hole of a substrate processing device according to a second embodiment. FIG. 11b is a drawing illustrating the flattening treatment of a surface irregularity portion that has entered the supply hole of a substrate processing device according to a second embodiment. FIG. 12a is a schematic cross-sectional view illustrating the substrate rotation processing operation of a substrate processing device according to a second embodiment. FIG. 12b is a schematic cross-sectional view illustrating the substrate rotation processing operation of a substrate processing device according to a second embodiment. FIG. 12c is a schematic cross-sectional view illustrating the substrate rotation processing operation of a substrate processing device according to a second embodiment. FIG. 13 is a flowchart illustrating a series of flattening processes performed in a substrate processing apparatus according to a second embodiment. Figures 14 (a) and (b) are schematic diagrams illustrating the operation of a substrate processing device according to a second embodiment. FIG. 15 is a schematic cross-sectional view of a catalyst pad included in the configuration of modified example 1 of a substrate processing device according to the present invention. FIG. 16a is a schematic cross-sectional view illustrating the flow of forming a transfer pattern using the catalyst pad of Modified Example 1. FIG. 16b is a schematic cross-sectional view illustrating the flow of forming a transfer pattern using the catalyst pad of Modified Example 1. FIG. 16c is a schematic cross-sectional view illustrating the flow of forming a transfer pattern using the catalyst pad of Modified Example 1. FIG. 17 is a schematic cross-sectional view of a substrate processing device of modified example 2. Specific details for implementing the invention

[0024] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. In the drawings below, the same reference numerals denote the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience of explanation. Furthermore, the embodiments described below are merely illustrative, and various modifications are possible from these embodiments.

[0025] In the following, parts described as "upper" or "above" may include not only those directly above in contact, but also those above in a non-contact state. Likewise, parts described as "lower" or "below" may include not only those directly below in contact, but also those below in a non-contact state.

[0026] A singular expression includes a plural expression unless the context explicitly indicates that it is singular. Furthermore, when a part is described as "including," "equipped," or "having" a specific component, this means that, unless specifically stated otherwise, it does not exclude other components but may include other components further.

[0027] With respect to the steps constituting the method, the steps are executed in an appropriate order unless the order is explicitly stated or otherwise stated. The method is not necessarily limited to the order in which the steps are described. All examples or the use of exemplary terms are merely for the purpose of illustrating the technical concept, and the scope is not limited by such examples or exemplary terms unless limited by the claims.

[0028] Meanwhile, in the following explanation, when ordinal numbers such as "1" and "2" are used, unless specifically stated otherwise, they are used for convenience and do not prescribe any specific order.

[0029] A substrate processing device (1) according to the first embodiment of the present invention will be described.

[0030] Here, for convenience of explanation, an XYZ orthogonal coordinate system is established in the substrate processing device (1). The direction parallel to the X-axis within a predetermined plane is the X-axis direction. The direction parallel to the Y-axis that is orthogonal to the X-axis within a predetermined plane is the Y-axis direction. The direction parallel to the Z-axis that is orthogonal to each of the X-axis and Y-axis is the Z-axis direction. In this embodiment, the predetermined plane is parallel to the horizontal plane in the XY plane, and the Z-axis is a vertical direction orthogonal to the predetermined plane. Accordingly, the Z-axis direction is the contact direction (thickness direction of each component) in which the substrate holding head (20) and the catalyst pad (30) of the substrate processing device (1) are close to and apart from each other, and the X-axis direction and the Y-axis direction correspond to plane directions orthogonal to the contact direction. Meanwhile, the contact direction includes a "separation direction," which is a direction for separating the substrate contact surface (32a) from the processing surface (W1), and a "contact direction," which is a direction for moving the substrate holding head (20) to bring the substrate contact surface (32a) into contact with the processing surface (W1).

[0031] The substrate processing device (1) of the first embodiment is a device that performs various treatments, such as planarization, on a processing surface (W1) of a substrate (W), such as a wafer, which is processed into a semiconductor chip, etc., by using a wet etching technique that utilizes a catalyst as an etching treatment. Meanwhile, the substrate processing device (1) can be configured to perform other treatments other than planarization as a substrate treatment.

[0032] The substrate (W) to be processed by the substrate processing device (1) may be composed of a wafer made of, for example, silicon (Si), germanium (Ge), or a III-V group semiconductor (e.g., gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), indium arsenide (InAs), indium antimony (InSb), indium gallium arsenide (InGaAs), or a combination thereof). The substrate (W) has a fine uneven shape (surface unevenness (Wa)) on the processing surface (W1) (see FIG. 3a). The surface unevenness (Wa) is a part that is removed by etching. The substrate (W) is immersed in a processing agent in the process chamber (10) while the processing surface (W1) and the substrate contact surface (32a) of the catalyst pad (30) are in contact, thereby removing the surface unevenness (Wa) and flattening the substrate.

[0033] As shown in FIG. 1, the substrate processing device (1) is configured to include a process chamber (10), a substrate holding head (20), a catalyst pad (30), a pad holding section (40), a moving mechanism (50) for moving the substrate holding head (20) in a predetermined direction, a supply discharge section (60), a temperature control section (70), a concentration measuring section (80), and a thickness measuring section (90). The substrate processing device (1) is equipped with a control section (200) as shown in FIG. 1, and the driving control of each section is performed by the control section (200). The substrate processing device (1) may be configured to include other components in addition to the components described above.

[0034] The process chamber (10) is composed of a bottom portion (11) and side walls (12) and includes a receiving portion (14) in which a processing agent can be stored. A pad retaining portion (40) is fixedly disposed on the bottom portion (11) of the process chamber (10). The process chamber (10) is provided with a temperature control portion (70) to maintain the temperature of the processing agent inside the chamber at a predetermined temperature (e.g., 25°C). In FIG. 1, the process chamber (10) may be configured in a cylindrical shape without a ceiling to match the shape of the substrate (W) in the shape of the receiving portion (14). However, the process chamber (10) may have other shapes, such as a rectangular prism, in addition to the cylindrical shape.

[0035] The substrate holding head (20) is composed of a head body (21) and a substrate holding part (22). The substrate holding head (20) is positioned opposite to the pad holding part (40). The substrate holding head (20) is connected to a moving mechanism (50) such that the head body (21) moves relatively in a contact direction (Z-axis direction) that is close to and farther away from at least the pad holding part (40).

[0036] The substrate holding part (22) is composed of an electrostatic chuck and holds the substrate (W) by adsorption. The substrate holding part (22) is supplied with a high voltage necessary to electrostatically adsorb and fix the substrate (W) from a DC power supply unit not shown. Since the substrate holding part (22) is composed of an electrostatic chuck, it can reliably hold the substrate (W) immersed in the processing liquid within the process chamber (10).

[0037] The catalyst pad (30) is composed of a substrate (31) and a catalyst layer (32). The area of ​​the substrate contact surface (32a) of the catalyst pad (30) is larger than the area of ​​the processing surface (W1) of the substrate (W). As a result, the catalyst pad (30) can come into contact with the front surface of the processing surface (W1) of the substrate (W) during the flattening process. Accordingly, the substrate processing device (1) can flatten the front surface of the processing surface (W1) while the substrate (W) and the catalyst pad (30) are fixed in position during the etching process.

[0038] The substrate (31) can be formed, for example, from urethane, epoxy resin, or a nonwoven fabric processed from polyester. The Shore D hardness of the substrate (31) is 50 or higher and 90 or lower. The substrate (31) has a catalyst forming surface (31a) on which a catalyst layer (32) is formed. The catalyst pad (30) does not move during processing because the substrate (31) is fixedly held in place by the pad holding portion (40).

[0039] The catalyst layer (32) can be formed from precious metals such as gold (Au), platinum (Pt), silver (Ag), and ruthenium (Ru), or carbon materials such as fullerene, carbon nanotubes, graphene, graphene nanoribbons, and graphene reduction agents. The catalyst layer (32) has a substrate contact surface (32a) that contacts the processing surface (W1) of the substrate (W). The substrate contact surface (32a) is a surface that faces the processing surface (W1) of the substrate (W) held by the substrate holding head (20) when the catalyst pad (30) is placed on the pad holding portion (40).

[0040] The catalyst layer (32) can be formed on the substrate (31) using a thin film forming method, such as sputtering, when the forming material is a precious metal. Alternatively, the catalyst layer (32) can be formed by forming a metal film on the catalyst forming surface (31a), performing an iodine coating, and then forming a carbon material film by applying a pulsed electric field to the substrate (31) in a solvent containing a precursor of the carbon material.

[0041] The substrate contact surface (32a) is generally flat to flatten the processing surface (W1). The flatness of the substrate contact surface (32a) is higher than the flatness of the processing surface (W1) of the substrate (W) in the pre-processing state of the substrate (W). Therefore, the surface of the substrate contact surface (32a) can be said to have better overall global flatness than the surface of the processing surface (W1) of the substrate (W). For example, if the global step height of a 12-inch Si wafer as the substrate (W) is 100 nm, the global step height of the substrate contact surface (32a) can be less than 100 nm. Meanwhile, as an indicator of "flatness" in this specification, for example, the Global Backsurface-referenced Ideal plane / Range (GBIR) and Site Backsurface-referenced Ideal plane / Range (SBIR), which are flatness evaluation indicators, can be used. These flatness values ​​can be measured from the nano-order to the micro-order using a film thickness measuring device utilizing spectroscopic interference.

[0042] The pad holding portion (40) is fixedly positioned on the bottom portion (11) of the process chamber (10) and holds the catalyst pad (30) in a position facing the substrate holding head (20). The pad holding portion (40) has a holding surface (41) that holds the catalyst pad (30) in place and a holding surface (42) opposite to the holding surface (41).

[0043] The moving mechanism (50) moves the substrate holding head (20) relative to the catalyst pad (30) in a folding direction. The moving mechanism (50) may be configured, for example, as a 6-axis driving mechanism. The moving mechanism (50) is mounted on the shaft portion (21a) of the head body (21) of the substrate holding head (20). The moving mechanism (50) may include an adjustment driving unit (51) that moves the substrate holding head (20) in a folding direction, a plane direction orthogonal to the folding direction (X-axis direction or Y-axis direction), and a rotation direction with the folding direction as the rotation axis (rotation around the Z-axis, θZ). Additionally, as other directions of movement, the moving mechanism (50) may move the substrate holding head (20) in a rotation direction around the X-axis (θX) and a rotation direction around the Y-axis (θY) by driving the adjustment driving unit (51). However, the moving mechanism (50) may be configured as a driving mechanism that allows the substrate holding head (20) to move only in the contact direction (separation direction and contact direction along the Z-axis direction), rather than being configured as a function of the adjustment driving unit (51) which allows free movement in each of the directions described above.

[0044] The moving mechanism (50) moves the substrate holding head (20) in the folding direction while maintaining the state in which the processing surface (W1) of the substrate (W) is parallel to the plane direction (X-axis direction, Y-axis direction) that is orthogonal to the folding direction. At this time, when the substrate (W) comes into contact with the substrate contact surface (32a) of the catalyst layer (32), a nearly uniform pressure is applied to the entire processing surface (W1). The moving mechanism (50) applies only pressure to the substrate holding head (20) while the substrate (W) and the catalyst pad (30) are in contact. As a result, the substrate (W) does not move in the plane direction during the etching process.

[0045] The supply discharge unit (60) supplies a predetermined amount of treatment agent into the process chamber (10). As shown in FIG. 2, the supply discharge unit (60) is configured to include a first supply unit (61), a first discharge unit (62), a mixing unit (63), and a raw material supply unit (64). The supply discharge unit (60) allows the treatment agent to be distributed to each unit through a pipe (65). Each unit of the supply discharge unit (60) is driven by the control of the control unit (200). The first supply unit (61), the first discharge unit (62), the mixing unit (63), and the raw material supply unit (64) can function as a first supply discharge unit that supplies the treatment agent into the process chamber (10).

[0046] The supply discharge unit (60) supplies / discharges a treatment agent to the process chamber (10) by means of the first supply unit (61), the first discharge unit (62), and the mixing unit (63), and forms a circulation path for storing a certain amount of treatment agent within the process chamber (10).

[0047] The treatment agent supplied by the supply discharge unit (60) is a fluid such as a liquid, and for example, a mixed solution of hydrogen fluoride (HF), hydrogen peroxide (H2O2), pure water (H2O), and amine-based additives can be used. Stable etching is possible if the mixing ratio (volume ratio) of the treatment agent is HF:H2O2:H2O = 1:1:X and the molar ratio is 1M:1.3M:X. If the treatment agent is to be used at a low speed to increase controllability, the ratio of pure water X can be increased. For example, it is effective to add a small amount of amine-based polymer additives or surfactants to the treatment agent to improve stability, such as suppressing the formation of porous Si.

[0048] The first supply unit (61) supplies a predetermined amount of the treatment agent supplied from the mixing unit (63) into the process chamber (10). The first supply unit (61) is formed to penetrate the side wall (12) of the process chamber (10). A supply amount adjustment unit (61a), such as a valve, is disposed on the upstream side of the first supply unit (61). The supply amount adjustment unit (61a) is controlled to open and close so that a certain amount of the treatment agent is stored in the process chamber (10) by the control of the control unit (200).

[0049] The first discharge section (62) discharges a predetermined amount of treatment agent within the process chamber (10). The first discharge section (62) is formed to penetrate the bottom section (11) of the process chamber (10). The first discharge section (62) distributes the discharged treatment agent to the mixing section (63). A discharge amount adjustment section (62a), such as a valve, is positioned on the downstream side of the first discharge section (62). The discharge amount adjustment section (62a) is controlled to open and close by the control of the control section (200) so that a certain amount of treatment agent is retained within the process chamber (10).

[0050] The mixing unit (63) temporarily stores the treatment agent discharged through the first discharge unit (62) and then distributes a predetermined amount of the treatment agent to the first supply unit (61). The mixing unit (63) receives the raw solution of the treatment agent from the raw solution supply unit (64) at the timing when the concentration of the treatment agent becomes below a standard level, or at the timing when a predetermined time has elapsed since the start of treatment. The mixing unit (63) functions as a buffer element to maintain the concentration of the treatment agent at a constant level.

[0051] The source supply unit (64) is a tank that stores the source of the treatment agent. The source supply unit (64) supplies the source of the treatment agent to the mixing unit (63) at a time when the concentration of the treatment agent falls below a standard level, or at a time when a predetermined amount of time has elapsed since the start of treatment. Accordingly, the treatment agent stored in the mixing unit (63) is adjusted to a standard concentration by mixing the treatment agent introduced from the first discharge unit (62) with the source of the treatment agent supplied from the source supply unit (64).

[0052] The temperature control unit (70) is composed of a heating and cooling device capable of heating and cooling the treatment agent stored in the process chamber (10) to a predetermined temperature (e.g., 25°C). The temperature control unit (70) may be placed inside the bottom part (11) or side wall (12) of the process chamber (10) to heat or cool the process chamber (10) and indirectly adjust the temperature of the treatment agent. Alternatively, the temperature control unit (70) may be placed so as to be exposed on the inner surface of the bottom part (11) or side wall (12) of the process chamber (10) to directly heat or cool the treatment agent and adjust the temperature.

[0053] The concentration measuring unit (80) measures the concentration of the treatment agent. As shown in FIG. 1, the concentration measuring unit (80) is positioned in the process chamber (10) to measure the concentration of the treatment agent. The concentration measuring unit (80) measures the concentration of the treatment agent in the process chamber (10) and outputs an electrical signal according to the measured concentration value to the control unit (200).

[0054] Additionally, the concentration measuring unit (80) is positioned within the mixing unit (63) to measure the concentration of the treatment agent stored in the mixing unit (63). The concentration measuring unit (80) measures the concentration of the treatment agent within the mixing unit (63) and outputs an electrical signal corresponding to the measured concentration value to the control unit (200).

[0055] The thickness measuring unit (90) measures the thickness of the substrate (W). The thickness measuring unit (90) may be configured, for example, as a non-contact measuring device using infrared light. The thickness measuring unit (90) is positioned to be movable in the diameter direction of the substrate (W). As a result, the thickness measuring unit (90) can measure the thickness of the substrate (W) as a whole. The thickness measuring unit (90) measures the thickness of the substrate (W) and outputs an electrical signal corresponding to the measured thickness to the control unit (200).

[0056] The temperature measuring unit (100) measures the temperature of the treatment agent stored in the process chamber (10). The temperature measuring unit (100) measures the temperature of the treatment agent in the process chamber (10) and outputs an electrical signal according to the measured temperature value to the control unit (200).

[0057] The control unit (200) is composed of, for example, a processor and a memory that stores a program or information for operating the processor. The control unit (200) comprehensively performs driving control of each part constituting the substrate processing device (1).

[0058] Hereinafter, the main control details of the control unit (200) are described. Meanwhile, in addition to the control details described below, the control unit (200) performs various controls regarding the operation of the substrate processing device (1).

[0059] The control unit (200) drives and controls the moving mechanism (50) to move the substrate holding head (20) in a predetermined direction. The substrate holding head (20) moves along the contact direction so that the substrate (W) and the catalyst pad (30) come into contact or separate at a predetermined timing during the flattening process under the control of the control unit (200).

[0060] The control unit (200) controls the operation of the first supply unit (61), the first discharge unit (62), and the raw material supply unit (64) based on the measurement results of the concentration measuring unit (80). In the mixing unit (63), the required amount of raw treatment solution is introduced from the raw material supply unit (64), and the concentration of the stored treatment solution is adjusted to a reference concentration. The treatment solution with the adjusted concentration in the mixing unit (63) is supplied into the process chamber (10) from the first supply unit (61). As a result, the treatment solution in the process chamber (10) becomes the reference concentration.

[0061] The control unit (200) controls the movement mechanism (50) based on the measurement result of the thickness measuring unit (90) to move the substrate holding head (20) in a predetermined direction. For example, if the control unit (200) determines based on the measurement result of the thickness measuring unit (90) that the thickness of the processing surface (W1) of the substrate (W) has been etched to a target thickness, it moves the substrate holding head (20) in a folding direction to separate the substrate (W) from the catalyst pad (30). By doing so, the substrate processing device (1) completes the flattening process of the substrate (W). Additionally, if the control unit (200) determines based on the measurement result of the thickness measuring unit (90) that the progress speed of the etching process is below a certain level, it moves the substrate holding head (20) in a folding direction to separate the substrate (W) from the catalyst pad (30). As a result, the treatment agent between the center of the substrate (W) and the center of the catalyst layer (32) is replaced with a new treatment agent in the surroundings by the negative pressure action caused by the separation movement of the substrate holding head (20), and the progress speed of the etching process can be restored to the same level as at the start of the process.

[0062] The control unit (200) controls the opening and closing of the supply amount adjustment unit (61a) of the first supply unit (61) and the discharge amount adjustment unit (62a) of the first discharge unit (62) to maintain a constant amount of the treatment agent stored in the process chamber (10). As a result, a constant amount of the treatment agent is always stored in the process chamber (10) during the flattening process.

[0063] The control unit (200) controls the temperature adjustment unit (70) based on the measurement result of the temperature measuring unit (100). As a result, the processing agent in the process chamber (10) is maintained at a constant temperature.

[0064] As shown in FIGS. 3a to 3c, the substrate processing device (1) flattens the processing surface (W1) of the substrate (W) by using a wet etching method utilizing a catalyst and bringing the processing surface (W1) into contact with the substrate contact surface (32a) of the catalyst pad (30) in the presence of a processing agent.

[0065] As shown in FIG. 3a, when the flattening process is initiated, a portion of the processing surface (W1) comes into contact with the substrate contact surface (32a).

[0066] As shown in FIG. 3b, the substrate (W) is gradually etched according to the principle illustrated in FIG. 3d by the surface roughness (Wa) of the processing surface (W1) and the catalyst layer (32) of the substrate contact surface (32a) coming into contact in the processing agent. In the wet etching of this embodiment, first, as shown in Equation (1) below, hydrogen peroxide is reduced by the action of the catalyst to generate holes (h+). Next, as shown in Equation (2) below, when the holes (h+) are supplied to the surface of the substrate (W) through the catalyst, Si is oxidized to generate SiO. Then, as shown in Equation (3) below, the generated SiO reacts with HF (hydrofluoric acid) in the solvent to proceed with etching. Neither the substrate (W) nor the catalyst pad (30) moves in a planar direction during the etching process, and the contact state between the processing surface (W1) and the substrate contact surface (32a) is maintained while a pressure is applied by the moving mechanism (50). Meanwhile, in the following equations (1) to (3), "H + 」 represents hydrogen ions, 「H2SiF6」 represents hexafluorosilicic acid, and 「n」 represents a coefficient depending on the number of Si (n=1, 2, 3, 4).

[0067]

[0068] And, as shown in FIG. 3c, the substrate (W) is etched for a predetermined time so that the processing surface (W1) is flattened.

[0069] In this way, the substrate processing device (1) performs a planarization process while maintaining contact between the substrate (W) and the catalyst pad (30) during the etching process. As a result, the substrate processing device (1) does not move the substrate holding head (20) in a planar direction during the etching process, thereby preventing the occurrence of scratches, etc. Additionally, the substrate processing device (1) can improve productivity by allowing the entire surface of the substrate processing surface (W1) of the substrate (W) to be planarized at once during the planarization process, as the area of ​​the substrate contact surface (32a) of the catalyst pad (30) is larger than the area of ​​the processing surface (W1) of the substrate (W).

[0070] If the substrate processing device (1) accommodates the processing surface (W1) of the substrate (W) within the substrate contact surface (32a) of the catalyst pad (30), the shape of the substrate (W) as viewed from a planar view can be made into a desired shape. For example, the substrate (W) can be made into various shapes such as a circle as shown in FIG. 4a, a rectangle such as a square as shown in FIG. 4b, or an ellipse as shown in FIG. 4c.

[0071] As shown in FIG. 5, the substrate processing device (1) requires conditioning treatment such as polishing or replacement of the catalyst pad (30) due to thinning of the substrate contact surface (32a) of the catalyst pad (30), attachment of foreign matter due to etching treatment, peeling of the catalyst layer (32), deterioration of flatness, etc. Accordingly, the substrate processing device (1) includes a conditioning mechanism (110) for performing a predetermined conditioning treatment on the catalyst pad (30).

[0072] A conditioning mechanism (110) is positioned in a location accessible to a catalyst pad (30) within a process chamber (10). The conditioning mechanism (110) is equipped with a conditioning unit (111) that performs a predetermined conditioning treatment, such as polishing, on the substrate contact surface (32a) of the catalyst pad (30). The conditioning unit (111) is mounted on an arm (112) and can move between a substrate processing device (1) and a standby unit (113). Normally, the conditioning unit (111) waits in the standby unit (113), and when a conditioning treatment is performed, it moves from the standby unit (113) to the upper side of the catalyst pad (30) of the substrate processing device (1).

[0073] The conditioning mechanism (110) performs a conditioning treatment at a timing corresponding to a predetermined conditioning execution condition, such as the total processing time of the etching treatment or the number of etchings, under the control of the control unit (200). When the conditioning execution timing is reached, the conditioning mechanism (110) drives the arm unit (112) to move the conditioning unit (111) from the standby unit (113) to the substrate processing device (1). The conditioning mechanism (110) performs a predetermined conditioning treatment on the substrate contact surface (32a) of the catalyst pad (30) through the conditioning unit (111). After conditioning the catalyst pad (30), the conditioning mechanism (110) drives the arm unit (112) to return the conditioning unit (111) to the standby unit (113).

[0074] Next, the operation of the substrate processing device (1) according to the first embodiment will be described with reference to FIGS. 7a and 7b. Meanwhile, the series of operations described below is an example, and other operations may be included between each operation as needed. In addition, the order of operations shown below may be changed within the scope of not departing from the gist of the present invention.

[0075] As shown in FIG. 6, the substrate processing device (1) performs a flattening process including a contact process (S1), a flattening process (S2), a first judgment process (S3), a processing agent exchange process (S4), and a second judgment process (S5). The substrate processing device (1) performs each process while driving each part under the control of the control unit (200).

[0076] Meanwhile, the substrate processing device (1) may perform a preparation process before performing the contact process (S1). The preparation process includes a process of storing a predetermined amount of processing agent in the process chamber (10), a process of setting the substrate (W) on the substrate holding head (20), and a process of setting the catalyst pad (30) on the pad holding part (40).

[0077] The substrate processing device (1) performs a contact process (S1) as shown in (a) of FIG. 7a. The processing surface (W1) of the substrate (W) comes into contact with the substrate contact surface (32a) of the catalyst pad (30).

[0078] The substrate processing device (1) performs a flattening process (S2) as shown in (b) of FIG. 7a. The substrate (W) is immersed in a processing agent within the process chamber (10) and comes into contact with a catalyst pad (30) to perform the flattening process.

[0079] The substrate processing device (1) performs a first judgment processing process (S3). The control unit (200) determines whether the etching process progress speed is below a certain level and whether the deviation in the uniformity of the progress speed is above a certain level based on the measurement results of the thickness measuring unit (90). If the control unit (200) determines that the etching process progress speed is below a certain level and the deviation in the uniformity of the progress speed is above a certain level (S3-Yes), it proceeds to the processing agent exchange process (S4). Meanwhile, if the control unit (200) determines that the etching process progress speed is not below a certain level or the deviation in the uniformity of the progress speed is not above a certain level (S3-No), it returns to the planarization processing process (S2) and continues the planarization processing.

[0080] The substrate processing device (1) performs a treatment agent exchange process (S4). As shown in (c) of FIG. 7a, the substrate processing device (1) drives a moving mechanism (50) to move the substrate holding head (20) a predetermined distance and separates the substrate (W) from the catalyst pad (30). Accordingly, the treatment agent between the center of the substrate (W) and the center of the catalyst layer (32) is replaced with a new treatment agent from the surroundings by the negative pressure action resulting from the separation movement of the substrate holding head (20), as shown in (d) of FIG. 7b. The treatment agent exchange process (S4) is performed as shown in (e) of FIG. 7b, after separating the substrate holding head (20) for a predetermined time, the treatment surface (W1) is brought into contact with the substrate contact surface (32a) again.

[0081] The substrate processing device (1) performs a second judgment processing process (S5). The control unit (200) determines whether the substrate (W) has been etched to a target thickness based on the measurement result of the thickness measuring unit (90). If the control unit (200) determines that the substrate (W) has been etched to a target thickness (S5-Yes), it terminates the processing. Meanwhile, if the control unit (200) determines that the substrate (W) has not been etched to a target thickness (S5-No), it returns to the planarization processing process (S2) and continues the planarization processing.

[0082] Next, a substrate processing apparatus (1A) according to a second embodiment of the present invention will be described. In the substrate processing apparatus (1A) according to the second embodiment described below, the same reference numerals are assigned to components identical to those in the above-described embodiment, and their descriptions are omitted. Furthermore, matters not specifically mentioned may be configured in the same way as those in the above-described embodiment.

[0083] In the second embodiment of the present invention, the substrate processing device (1A) has a shape of the catalyst pad (30), pad holding part (40), and supply discharge part (60) that is different from the shape described above.

[0084] As shown in FIG. 8, the substrate processing device (1A) of the second embodiment can supply a processing agent through a catalyst pad (30) and a pad holding part (40). That is, the substrate processing device (1A) has another supply route for supplying a processing agent from a supply hole (66) in addition to a supply route for supplying a processing agent from a first supply part (61).

[0085] As illustrated in FIGS. 8 and 9, the supply discharge unit (60) is further configured to include a supply hole (66), a supply pipe (67), and a flow control unit (68). The supply hole (66), the supply pipe (67), and the flow control unit (68) can function as a second supply discharge unit that supplies a treatment agent to the substrate contact surface (32a) through the interior of the catalyst pad (30).

[0086] The supply hole (66) is formed to communicate from the fixed surface (42) of the pad holding portion (40) to the substrate contact surface (32a) of the catalyst layer (32). Multiple supply holes are formed in the catalyst pad (30) and the pad holding portion (40). The treatment agent supplied from the supply pipe (67) is supplied to the substrate contact surface (32a) through the supply hole (66).

[0087] The supply holes (66) have a diameter sufficient to allow the treatment agent to flow through, and can be formed, for example, on the order of microns. As shown in FIG. 10a, the supply holes (66) can be formed generally uniformly at regular intervals on the substrate contact surface (32a). As shown in FIG. 10b, the supply holes (66) can be formed by arranging them more densely in the central part of the substrate contact surface (32a) (the area enclosed by the dotted line in the drawing) than in the peripheral part on the outer side. It is preferable to form the supply holes (66) in the arrangement shown in FIG. 10b so that the treatment agent can be properly supplied to the central part that is difficult to reach.

[0088] The supply pipe (67) is composed of a second supply section (67a), a second discharge section (67b), and a connection section (67c). The connection section (67c) of the supply pipe (67) is connected to the upstream opening end of each supply hole (66). The supply pipe (67) supplies the treatment agent supplied from the mixing section (63) to the supply hole (66) through the second supply section (67a) and the connection section (67c). The supply pipe (67) discharges the unnecessary treatment agent inside the pipe from the second discharge section (67b). The discharged treatment agent returns to the mixing section (63). The supply pipe (67) can be formed inside the pad holding section (40) and inside the bottom section (11) of the process chamber (10).

[0089] The distribution control unit (68) is positioned at a predetermined location in the supply hole (66) and the supply pipe (67). The distribution control unit (68) may be configured as a valve that operates to open and close. The distribution control unit (68) operates to supply a required amount of treatment agent from the supply hole (66) to the substrate contact surface (32a) under the control of the control unit (200).

[0090] As shown in FIG. 11a, the substrate processing device (1A) has a supply hole (66) formed in the catalyst pad (30), so there is a case where the leading edge of the surface irregularity portion (Wa) of the processing surface (W1) of the substrate (W) enters the supply hole (66). However, as shown in FIG. 11b, the substrate processing device (1A) supplies an appropriate amount of processing agent of a standard concentration from the supply hole (66), so the surface irregularity portion (Wa) (gray portion) that has entered the supply hole (66) can also be etched.

[0091] Since the supply hole (66) is formed in the catalyst pad (30) of the substrate processing device (1A), there is a possibility that the surface irregularity portion (Wa) at the opening position of the supply hole (66) may not be accurately etched during the flattening process. Accordingly, the substrate processing device (1A) appropriately drives the moving mechanism (50) under the control of the control unit (200) to perform a substrate rotation process that changes the contact position between the substrate (W) and the catalyst pad (30). This substrate rotation process is performed based on the measurement result of the thickness measuring unit (90).

[0092] The substrate processing device (1A) can perform substrate rotation processing by driving the substrate holding head (20) as shown in FIGS. 12a to 12c.

[0093] As shown in FIG. 12a, the substrate processing device (1A) raises the substrate holding head (20) to separate the substrate (W) from the catalyst pad (30). The separation amount of the substrate holding head (20) is at least a distance such that the substrate (W) and the catalyst pad (30) are separated and rotation is not hindered.

[0094] Next, the substrate processing device (1A) rotates the substrate holding head (20) in a predetermined direction as shown in FIG. 12b. At this time, the substrate processing device (1A) rotates the substrate holding head (20) by a predetermined amount of rotation so that the surface irregularity portion (Wa) does not enter the opening of the supply hole (66) as much as possible and comes into contact with the substrate contact surface (32a). Meanwhile, the amount of rotation of the substrate holding head (20) is appropriately set according to the position of the supply hole (66) formed in the catalyst pad (30), the size or thickness of the substrate (W), etc., so that the surface irregularity portion (Wa) comes into contact with the substrate contact surface (32a).

[0095] After that, the substrate processing device (1A) lowers the rotated substrate holding head (20) as shown in FIG. 12c to bring the substrate (W) and the catalyst pad (30) into contact so that a constant pressure is applied to the substrate (W).

[0096] In this embodiment, the substrate (W) is rotated in a non-contact state with the catalyst pad (30) to perform processing such that the contact position between the substrate contact surface (32a) of the catalyst pad (30) and the processing surface (W1) is offset before and after rotation. The substrate contact surface (32a) of the catalyst pad (30) has a plurality of supply holes (66) formed therein, and there may be cases where a portion of the surface irregularity (Wa) of the processing surface (W1) enters the opening of the supply hole (66). At this time, there is a possibility that only a portion of the surface irregularity (Wa) comes into contact with the substrate contact surface (32a) and is not properly etched. However, the substrate processing device (1A) of this embodiment can uniformly flatten the processing surface (W1) by rotating the substrate holding head (20) to change the contact position between the processing surface (W1) and the substrate contact surface (32a).

[0097] A substrate processing device (1A) according to a second embodiment is provided with a supply discharge unit (60) that supplies a processing agent to the substrate contact surface (32a) of the catalyst pad (30) through a supply hole (66) and a supply pipe (67). Accordingly, the substrate processing device (1A) can appropriately supply the processing agent to the center and surrounding parts of the catalyst pad (30). In addition, the substrate processing device (1A) drives a substrate holding head (20) to change the contact position between the processing surface (W1) of the substrate (W) and the substrate contact surface (32a) of the catalyst pad (30). By doing so, the substrate processing device (1A) can reduce etching defects of the substrate (W) caused by the supply hole (66).

[0098] Next, the operation of the substrate processing device (1A) according to the second embodiment will be described. Meanwhile, the series of operations described below is merely an example, and other operations may be included between each operation as needed. Additionally, the order of operations shown below may be changed within the scope of not departing from the essence of the present invention.

[0099] As illustrated in FIG. 13, the substrate processing device (1A) performs a flattening process including a contact process (S11), a flattening process (S12), a first judgment process (S13), a rotation process (S14), and a second judgment process (S15). Each process is performed by the substrate processing device (1) under the control of the control unit (200). A certain amount of processing agent is supplied to the substrate processing device (1A) from the first supply unit (61) and the supply hole (66) of the supply discharge unit (60).

[0100] Meanwhile, the substrate processing device (1) may perform a preparation process before performing the contact process (S11). The preparation process includes a process of storing a predetermined amount of processing agent in the process chamber (10), a process of setting the substrate (W) on the substrate holding head (20), and a process of setting the catalyst pad (30) on the pad holding part (40).

[0101] The substrate processing device (1) performs a contact process (S11) as shown in (a) of FIG. 14. The processing surface (W1) of the substrate (W) comes into contact with the substrate contact surface (32a) of the catalyst pad (30).

[0102] As shown in Fig. 14 (b), the substrate processing device (1) performs a flattening process (S12). The substrate (W) is immersed in a processing agent within the process chamber (10) and comes into contact with the catalyst pad (30) to perform the flattening process. In the flattening process (S12), a certain amount of processing agent is supplied from the first supply unit (61) and the supply hole (66).

[0103] The substrate processing device (1) performs a first judgment processing process (S13). The control unit (200) determines the progress of the etching process based on the measurement results of the thickness measuring unit (90). If the control unit (200) determines that the etching throughput has reached a predetermined amount (S13-Yes), it proceeds to a rotation process (S14). Meanwhile, if the control unit (200) determines that the etching throughput has not reached a predetermined amount (S13-No), it returns to the planarization processing process (S12) and continues the planarization processing. Additionally, the control unit (200) may proceed to a rotation process (S14) at predetermined intervals.

[0104] The substrate processing device (1) performs a rotation process (S14). As shown in FIGS. 12a to 12c, the substrate processing device (1) controls the moving mechanism (50) to move the substrate holding head (20) and changes the contact position between the processing surface (W1) of the substrate (W) and the substrate contact surface (32a) of the catalyst pad (30). Accordingly, the surface irregularity (Wa) of the processing surface (W1) comes into contact with the substrate contact surface (32a) other than the opening of the supply hole (66) and is appropriately flattened.

[0105] The substrate processing device (1) performs a second judgment processing process (S15). The control unit (200) determines whether the substrate (W) has been etched to a target thickness based on the measurement result of the thickness measuring unit (90). If the control unit (200) determines that the substrate (W) has been etched to a target thickness (S15-Yes), it terminates the processing. Meanwhile, if the control unit (200) determines that the substrate (W) has not been etched to a target thickness (S15-No), it returns to the planarization processing process (S12) and continues the planarization processing.

[0106] Next, an example of modification of the substrate processing apparatus according to the present embodiment will be described. The following modifications may be appropriately incorporated into each of the embodiments described above. Furthermore, the following modifications may be appropriately combined and adopted within the scope that does not deviate from the gist of the invention.

[0107] The substrate processing device (1B) of the modified example 1 in this embodiment will be described. As shown in FIG. 15, the substrate processing device (1B) of the modified example 1 can form a transfer pattern (33) of a predetermined shape on the substrate contact surface (32a) of the catalyst pad (30) and transfer it to the substrate (W).

[0108] A transfer pattern (33) is formed on the surface of the substrate contact surface (32a) of the catalyst layer (32). When the transfer pattern (33) is etched during the planarization process, a predetermined pattern shape is transferred to the surface of the processing surface (W1) of the substrate (W). The shape of the transfer pattern (33) can be formed in any shape depending on the use of the substrate (W). For example, the transfer pattern (33) can be formed in an uneven shape as shown in FIG. 15.

[0109] As shown in FIG. 16a, when transferring a transfer pattern (33) formed on a catalyst pad (30), the substrate processing device (1B) brings the processing surface (W1) into contact with the substrate contact surface (32a). As shown in FIG. 16b, the substrate processing device (1B) gradually etches the processing surface (W1) according to the shape of the transfer pattern (33). As shown in FIG. 16c, when the processing surface (W1) is etched into a shape according to the shape of the transfer pattern (33), the substrate processing device (1B) separates the substrate (W) from the catalyst pad (30). Accordingly, the pattern shape of the transfer pattern (33) is transferred to the processing surface (W1) of the substrate (W).

[0110] Meanwhile, if modified example 1 is adopted in a substrate processing device (1A), the substrate holding head (20) can be rotated to change the transfer position while etching, so various patterns can be made with higher precision.

[0111] The substrate processing apparatus (1C) of Modified Example 2 according to the present embodiment will be described. As shown in FIG. 17, the substrate processing apparatus (1C) of Modified Example 2 is a type that flattens the processing surface (W1) of a substrate (W) using a gas as a processing agent.

[0112] As illustrated in FIG. 17, the substrate processing device (1C) uses a gaseous processing agent within the process chamber (10). For example, the processing agent may be the vapor of hydrofluoric acid water. The substrate processing device (1C) includes a cover portion (13) for sealing and containing the gaseous processing agent within the process chamber (10). As illustrated in FIG. 17, the substrate processing device (1C) has an axial portion (21a) of the head body (21) of the substrate holding head (20) positioned to penetrate the cover portion (13) of the process chamber (10). A sealing member (23) is positioned around the axial portion (21a). The sealing member (23) is secured by a sealing holder (24). In this way, the process chamber (10) is sealed inside the receiving portion (14) by the cover portion (13) and the sealing member (23), so that the processing agent does not leak out.

[0113] Meanwhile, the substrate processing device (1C) differs in that the processing agent handled in the supply discharge unit (60) is a gas instead of a liquid, but the function of each part of the supply discharge unit (60) may be the same as that of the substrate processing device (1, 1A).

[0114] The substrate processing device (1C) is configured such that the substrate holding head (20) can be moved in a predetermined direction while the process chamber (10) is kept sealed inside by the cover portion (13) and the sealing member (23). As a result, the substrate processing device (1C) can perform flattening treatment in the same way as the substrate processing device (1, 1A) even when using gas as the processing agent.

[0115] As described above, the substrate processing device (1A) according to the present embodiment is a device that etches and flattens the processing surface (W1) of a substrate (W) to be processed within a process chamber (10), and comprises a substrate holding head (20), a substrate holding part (22) provided on the substrate holding head (20) and holding the substrate (W), a catalyst pad (30) including a substrate (31) and a catalyst layer (32) having a substrate contact surface (32a) formed on the surface of the substrate (31) facing the substrate (W) and in contact with the processing surface (W1) of the substrate (W), a pad holding part (40) that fixes and holds the catalyst pad (30) within the process chamber (10), a supply discharge part (60) that supplies an etching processing agent to at least the process chamber (10), a moving mechanism (50) that moves the substrate holding head (20) relative to the catalyst pad (30) in a contacting direction that is close to and farther away from the catalyst pad (30), and a control part (200). The pad (30) has a substrate contact surface (32a) area that is larger than the area of ​​the processing surface (W1), and the supply discharge unit (60) supplies a new processing agent to the substrate contact surface (32a) while the processing surface (W1) of the substrate (W) is pressed against the substrate contact surface (32a) of the catalyst pad (30) in the presence of the processing agent supplied in the process chamber (10).

[0116] With this configuration, the substrate processing device (1A) can supply a processing agent to the entire contact surface between the substrate (W) and the catalyst pad (30) when etching the substrate (W) with the catalyst pad (30) using an etching technique utilizing a catalyst. As a result, the substrate processing device (1) can not only shorten the processing time but also properly etch the substrate (W). Furthermore, since the substrate processing device (1A) performs the etching process while maintaining the contact state between the substrate (W) and the catalyst pad (30), scratches do not occur. Additionally, since the area of ​​the substrate contact surface (32a) is larger than the area of ​​the processing surface (W1), the substrate processing device (1) can etch the entire processing surface (W1) at once, thereby improving productivity. Explanation of the symbols

[0117] 1, 1A, 1B, 1C substrate processing device 10 process chambers 11 bottom part 12 side walls 13 Cover part 14 Reception Department 20 substrate holding heads 21 Head Body 21a shaft 22 Substrate holding part 23 Sealing member 24 Sealing Holder 30 catalyst pads 31 entries 31a Catalyst formation surface 32 catalyst layers 32a Substrate contact surface 33 Warrior Pattern 40 pad retention part 41 fat surface 42 fixed surface 50 mobility devices 51 Adjustment drive unit 60 Supply Discharge Section 61 First supply unit 61a Supply volume adjustment unit 62 1st discharge section 62a Emission Adjustment Unit 63 Mixing section 64. Raw Material Supply Unit 65 pipes 66 supply holes 67 Supply Piping 68 Distribution Coordination Department 70 Temperature control unit 80 concentration measuring unit 90 thickness measuring section 100 temperature measuring unit 110 Conditioning Device 111 Conditioning Section 112 dark areas 113 Waiting Unit 200 control unit W substrate W1 processing surface Wa surface irregularities

Claims

Claim 1 A substrate processing apparatus for etching a processing surface of a substrate to be processed within a process chamber, comprising: a substrate holding head; a substrate holding part provided in the substrate holding head and holding the substrate; a catalyst pad including a substrate and a catalyst layer formed on a surface of the substrate facing the substrate and having a substrate contact surface that contacts the processing surface of the substrate; a pad holding part that fixes and holds the catalyst pad within the process chamber; a supply discharge part that supplies an etching processing agent to at least the process chamber; a moving mechanism that moves the substrate holding head relatively in a direction of proximity and separation from at least the catalyst pad; and a control part, wherein the area of ​​the substrate contact surface of the catalyst pad is larger than the area of ​​the processing surface, and the supply discharge part supplies a new processing agent to the substrate contact surface while the processing surface of the substrate is pressed against the substrate contact surface of the catalyst pad in the presence of the processing agent supplied within the process chamber. Claim 2 A substrate processing device according to claim 1, wherein the substrate holding head is fixed in position while the processing surface of the substrate is in contact with the substrate contact surface of the catalyst layer. Claim 3 A substrate processing apparatus according to claim 1, wherein the flatness of the substrate contact surface is higher than the flatness of the processing surface. Claim 4 A substrate processing device according to claim 1, wherein the supply discharge unit comprises a first supply discharge unit that supplies the processing agent to the process chamber and a second supply discharge unit that supplies the processing agent to the substrate contact surface through the interior of the catalyst pad. Claim 5 In claim 4, the pad holding portion has a fixed surface fixed to the process chamber, and the second supply discharge portion includes a plurality of supply holes communicating the substrate contact surface and the fixed surface, a supply pipe for supplying the processing agent to the supply holes, and a flow control portion for controlling the amount of the processing agent supplied to the supply holes. Claim 6 A substrate processing apparatus according to claim 1, wherein the moving mechanism comprises an adjustment driving unit that moves the substrate holding head in the folding direction, a plane direction orthogonal to the folding direction, and a rotational direction with the folding direction as a rotation axis. Claim 7 A substrate processing device according to claim 6, wherein the control unit moves the substrate holding head in a separation direction to separate the substrate contact surface from the processing surface, moves the substrate holding head in at least one of the planar direction and the rotational direction, and then moves the substrate holding head in a contact direction to bring the substrate contact surface into contact with the processing surface. Claim 8 A substrate processing device according to claim 6, wherein a transfer pattern of a predetermined shape is formed on the surface of the substrate contact surface, and the control unit drives the moving mechanism so that an arbitrary pattern shape according to the transfer pattern is formed on the processing surface. Claim 9 A substrate processing apparatus comprising: a process chamber; a catalyst pad comprising a catalyst layer disposed on the bottom surface of the process chamber and having a substrate contact surface; a substrate holding part disposed on the catalyst pad and holding a substrate having a processing surface; a supply discharge part supplying an etching processing agent to the process chamber and discharging the used processing agent; and a control part, wherein the area of ​​the substrate contact surface of the catalyst pad is larger than the area of ​​the processing surface, and the control part controls the substrate to be immersed in a processing agent within the process chamber while the processing surface of the substrate and the substrate contact surface of the catalyst pad are in contact, thereby removing surface irregularities of the substrate and flattening it. Claim 10 A substrate holding head; a substrate holding member provided in the substrate holding head and holding a substrate; a catalyst pad comprising a substrate and a catalyst layer having a substrate contact surface formed on the surface of the substrate facing the substrate and contacting the processing surface of the substrate; a supply discharge member for supplying an etching agent to at least the process chamber; a moving mechanism for moving the substrate holding head in a contact direction that is close to and separated from at least the catalyst pad; and a control member for controlling the supply discharge member and the moving mechanism, wherein the area of ​​the substrate contact surface of the catalyst pad is larger than the area of ​​the processing surface, and the supply discharge member supplies a new processing agent to the substrate contact surface while the processing surface of the substrate is pressed against the substrate contact surface of the catalyst pad in the presence of the processing agent supplied in the process chamber, and the substrate holding head is fixed in position while the processing surface of the substrate is in contact with the substrate contact surface of the catalyst layer, and the moving mechanism is in a contact direction, a planar direction orthogonal to the contact direction, and a rotational direction with the contact direction as the axis of rotation. A substrate processing device comprising an adjustment drive unit for moving the substrate holding head, wherein the control unit moves the substrate holding head in a separation direction to separate the substrate contact surface from the processing surface, moves the substrate holding head in at least one of the planar direction and the rotational direction, and then moves the substrate holding head in a contact direction to bring the substrate contact surface into contact with the processing surface, wherein a transfer pattern of a predetermined shape is formed on the surface of the substrate contact surface, and the control unit drives the moving mechanism so that an arbitrary pattern shape according to the transfer pattern is formed on the processing surface.

Images