Method and system for forming a silicon-containing layer, and composition and synthesis of a silicon precursor

Abstract

A method and system for forming a silicon-containing layer on a substrate are disclosed. Additionally, the composition and synthesis of a silicon-containing precursor are disclosed. A method for forming a silicon-containing layer comprises the step of performing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse comprising the step of exposing a substrate to a first precursor. The first precursor comprises a molecule comprising a P-Si bond. A deposition cycle further comprises a plasma pulse comprising the step of exposing a substrate to a plasma treatment. The plasma treatment comprises the step of generating plasma.

Description

Technology Field Priority application information This application claims the benefit of U.S. Provisional Application No. 63 / 610,434 filed December 15, 2023, U.S. Provisional Application No. 63 / 560,233 filed March 1, 2024, U.S. Provisional Application No. 63 / 560,276 filed March 1, 2024, and U.S. Provisional Application No. 63 / 560,303 filed March 1, 2024, the full contents of each of which are incorporated herein by reference. Technology field The present disclosure generally relates to the field of semiconductor processing methods and systems and the field of integrated circuit manufacturing. In particular, a method and system suitable for forming a silicon-containing layer are disclosed. Background Technology As integrated circuits continue to be miniaturized and 3D integration becomes a reality, there is an increasing need for silicon-containing materials with excellent conformability and material properties such as improved dielectric constant, resistivity, and wet etching rate resistance. Additionally, there is a growing need for silicon-containing materials that can be formed using low-temperature processes, such as processes operating at temperatures up to 400°C, up to 300°C, or up to 200°C. For example, there is a need for conformable silicon nitride (SiN) low-dielectric spacers with high conformability, low leakage, low dielectric constant, and excellent wet etching resistance. All discussions, including the problems and solutions presented in this section, are incorporated into this disclosure solely for the purpose of providing context for the present disclosure. Such discussions should not be construed as an acknowledgment that any or all of the information was known at the time the present invention was made or otherwise constitutes prior art. The content of the present invention is provided to introduce selected concepts in a simplified form. These concepts are described in more detail in the detailed description of exemplary embodiments of the present disclosure below. The content of the present invention is not intended to distinguish the principal or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. Various embodiments of the present disclosure relate to a method for depositing a silicon-containing material, a structure and device formed using the method, and an apparatus for performing the method and / or forming the structure and / or device. The layer may be used in various applications including an etch stop layer, a back-end of line dielectric, a capping layer, a spacer, etc. The present invention describes a method for depositing a silicon-containing layer on a substrate in a reaction chamber. The method comprises the steps of providing a first precursor in a vapor phase into a reaction chamber and providing a nitrogen-containing reactive species into a reaction chamber. The first precursor has the following general formula, and PX n (SiR3) 3-n In the formula, P is phosphorus; Si is silicon bonded to phosphorus by Si-P bonds; n is an integer with a value of 0, 1, or 2; X is a substituent bonded to phosphorus, selected from the group consisting of hydrocarbon groups, halogens, hydrogen, amino groups, alkoxy groups, alkyl groups, and aryl groups; R is a substituent bonded to Si, selected from the group consisting of hydrogen, halogen, hydrocarbon, alkoxy, silyl, alkyl, and aryl groups. R and X can each be independently selected from the aforementioned groups. In some embodiments, reactive species are generated by the plasma of the reactants. In some embodiments, the reactive species comprises at least one compound selected from the group consisting of nitrogen, nitrogen atoms, nitrogen plasma, nitrogen radicals, N*, NH*, and NH2* radicals. In some embodiments, reactive species are generated directly on the substrate. In some embodiments, reactive species are generated away from the substrate. In some embodiments, a remote plasma generator is used to generate reactive species. In some embodiments, the first precursor is selected from the group consisting of trisilyl phosphine, tris(trimethylsilyl)phosphine, silyl phosphine, disilyl phosphine, bis(disilanyl)phosphine, disilanyl phosphine, tris(trisilanyl)phosphine, bis(trisilanyl)phosphine, trisilanyl phosphine, dichlorosilyl phosphine, chlorodisilyl phosphine, bis(disilanyl)chlorophosphine, disilanyl dichlorophosphine, trisilanyl dichlorophosphine, bis(trisilanyl)chlorophosphine, dimethylsilyl phosphine, disilylmethyl phosphine, bis(disilanyl)methylphosphine, disilanyl dimethyl phosphine, trisilanyl dimethyl phosphine, and bis(trisilanyl)methylphosphine. In some embodiments, the silicon-containing layer is selected from the group consisting of silicon nitride, silicon oxide, silicon carbonitride, silicon oxynitride, and silicon oxycarbonitride. In some embodiments, a silicon-containing layer is formed on a three-dimensional structure. The present invention further describes a method for depositing a silicon-containing layer on a substrate in a reaction chamber, and the method A step of providing a silicon precursor in a vapor phase into a reaction chamber; A step of providing a phosphorus precursor in a vapor phase within a reaction chamber; and It includes the step of providing a nitrogen-containing reactive species within a reaction chamber. In some embodiments, the silicon precursor comprises silicon and a substituent selected from the group consisting of hydrogen, halogen, and nitrogen-containing substituents. In some embodiments, the nitrogen-containing substituent is selected from the group consisting of amino groups, alkyl amino groups, and dialkyl amino groups. In some embodiments, the silicon precursor is SiH4, Si2H6, Si3H8, cyclopentasilan, cyclohexasilane, neopentasilan, SiH3Cl, SiH2Cl2, SiHCl3, SiCl4, SiH3Br, SiH2Br2, SiHBr3, SiBr4, SiH3I, SiH2I2, SiHI3, SiI4, Si(NMe2)4, SiH(NMe2)3, SiCl(NMe2)3, Si(NH2)(NMe3)3, SiH2(NEt2)2, SiH2(NHtBu)2, SiH3[N(iPr2)], SiH3[N(sBu2)], N(SiH3)3, N(SiMe3)3, NH(SiH3)2, NH(SiMe3)2Si2(NHEt)6, NH[SiH2N(SiH3)2]2, It is selected from the group consisting of SiH2[N(SiH3)2]2. In some embodiments, the phosphorus precursor comprises phosphorus and a substituent selected from the group consisting of hydrogen, halogen, and nitrogen-containing substituents. In some embodiments, the nitrogen-containing substituent is selected from the group consisting of amino groups, alkyl amino groups, and dialkyl amino groups. In some embodiments, the phosphorus precursor is PH3, tBuPH2, EtPH2, phenylphosphine, 1,2-diphosphinoethane, (2-methylpropyl)phosphine, cyclohexylphosphine and 1,2-diphosphinobenzene, PCl3, PCl5, PBr3, PBr5, PI3, MePCl2, EtPCl2, PrPCl2, iPrPCl2, BuPCl2, tBuPCl2, tBu2PCl, iPr2PCl, Et2PCl, Me2PCl, sBu2PCl, tBuMePCl, tBu2PBr, P(NMe2)3, PH(NMe2)2, PH2(NMe2), P(NEt2)3, PCl2(NEt2), PCl[N(iPr)2]2, tris(N-pyrrolidinyl)phosphine, PCl(NEt2)2, It is selected from the group consisting of PCl2(NMe2), PCl2[N(iPr)2], P(=NH)(NMe2)3, PCl(NMe2)2, and PMe(NMe2)2. In some embodiments, the nitrogen-containing reactive species comprises at least one compound selected from the group consisting of nitrogen, nitrogen atoms, nitrogen plasma, nitrogen radicals, N*, NH*, and NH2* radicals. A layer formed by the aforementioned method is additionally described above. In some embodiments, the layer contains less than 4 atomic percent phosphorus impurities. In some embodiments, the wet etching rate of the layer is less than 1.5 nm / min in 1.5% diluted hydrofluoric acid. In some embodiments, the growth rate of the layer is 0.3 to 2.0 Å per cycle. In some embodiments, the step coverage of the layer is greater than about 80%. In some embodiments, the step coverage of the layer is greater than about 90%. The present invention further discloses a silicon-containing layer obtained by depositing a precursor having a structure according to the following general formula, and PX n (SiR3) 3-n In the formula, P is phosphorus; Si is silicon bonded to phosphorus by Si-P bonds; n is an integer with a value of 0, 1, or 2; X is a substituent bonded to phosphorus, selected from the group consisting of hydrocarbon groups, halogens, hydrogen, amino groups, alkoxy groups, alkyl groups, and aryl groups; R is a substituent bonded to Si, selected from the group consisting of hydrogen, halogen, hydrocarbon, alkoxy, silyl, alkyl, and aryl groups. R and X can each be independently selected from the aforementioned groups. The present invention further describes a composition configured to deposit an amorphous silicon and non-metal-containing layer by PEALD. The composition comprises a chemical precursor having a structure according to the following general formula, and PX n (SiR3) 3-n In the formula, P is phosphorus; Si is silicon bonded to phosphorus by Si-P bonds; n is an integer with a value of 0, 1, or 2; X is a substituent bonded to phosphorus, selected from the group consisting of hydrocarbon groups, halogens, hydrogen, amino groups, alkoxy groups, alkyl groups, and aryl groups; R is a substituent bonded to Si, selected from the group consisting of hydrogen, halogen, hydrocarbon, alkoxy, silyl, alkyl, and aryl groups. R and X can each be independently selected from the aforementioned groups. The purity of the composition is less than 99.9 (w / w%); and it contains at least one impurity selected from a list consisting of oxygen-containing, carbon-containing, nitrogen-containing, sulfur-containing, and metal-containing impurities in excess of 1 ppm (w / w%). In one embodiment, the present disclosure relates to a composition comprising trisilylphosphine and impurities, wherein the composition has a purity of less than 99.99 (w / w%) of trisilylphosphine and the composition comprises at least one impurity selected from a list consisting of oxygen-containing, carbon-containing, nitrogen-containing, sulfur-containing, metal-containing impurities and halogen-containing impurities in an amount exceeding 1 ppb (w / w%). In some embodiments, the composition further comprises about 0.01 wt-% to about 10 wt-% of a solvent as an impurity, and the solvent is selected from at least one of the group consisting of pentane, hexane, cyclohexane, benzene, toluene, xylene, diethyl ether, methyl tert-butyl ether, tetrahydrofuran, 1,4-dioxane, acetonitrile, chloroform, dichloromethane, carbon tetrachloride, triethylamine, pyridine, ethyl acetate, 1,2-dimethoxyethane, dimethyl sulfoxide, 1,2-dichloroethane, chlorobenzene, acetone, 2-butanone and species thereof. In some embodiments, the composition comprises about 0.01 wt-% to about 10 wt-% of species impurities, and the species impurities are P(SiMe3)3, SiH3Cl, SiH2Cl2, SiHCl3, SiCl4, SiHMe3, SiClMe3, P(SiH3)(SiMe3) 2, It is selected from the group consisting of P(SiH3)2(SiMe3), PCl(SiH3)2, PCl2(SiH3), PCl(SiMe3)2, PCl2(SiMe3), PCl3, PH(SiH3)2, PH2(SiH3), PH(SiMe3)2 and PH2(SiMe3). In some embodiments, the composition is P(SiMe3)3, SiH3Cl, SiH2Cl2, SiHCl3, SiCl4, SiHMe3, SiClMe3, P(SiH3)(SiMe3) 2,It does not contain any impurities selected from the group consisting of P(SiH3)2(SiMe3), PCl(SiH3)2, PCl2(SiH3), PCl(SiMe3)2, PCl2(SiMe3), PCl3, PH(SiH3)2, PH2(SiH3), PH(SiMe3)2, and PH2(SiMe3). In some embodiments, the composition does not contain a group IV halide. In some embodiments, the group IV element in the group IV halide is selected from a list consisting of tin, germanium, and silicon. In some embodiments, the composition does not contain phosphorus-hydrogen bonds. In some embodiments, the composition does not contain silyl chloride. In some embodiments, the composition comprises about 0.01 wt-% to about 10 wt-% of species impurities, and the species impurities are P(OSiMe3) x (SiMe3) y , P(OSiMe3) x (SiH3) y , P(OSiH3) x (SiH3) y , and P(OSiH3) x (SiMe3) y Selected from the group consisting of, where x = 1 to 3 and x + y = 3. In some embodiments, the composition comprises about 0.01 wt-% to about 10 wt-% of seed impurities, and the seed impurities are PH x (OSiMe3) y (SiMe3) z , PH x (OSiMe3) y (SiH3) z , PH x (OSiH3) y (SiH3) z , and PH x (OSiH3) y (SiMe3) zSelected from the group consisting of, where x = 1 or 2, y = 1 or 2, z = 0 or 1, and x + y + z = 3. In some embodiments, the composition comprises about 0.01 wt-% to about 10 wt-% of species impurities, and the species impurities are P(Hal) x (OSiMe3) y (SiMe3) z , P(Hal) x (OSiMe3) y (SiH3) z , P(Hal) x (OSiH3) y (SiH3) z , and P(Hal) x (OSiH3) y (SiMe3) z Selected from the group consisting of, where x = 1 or 2, y = 1 or 2, z = 0 or 1, x + y + z = 3, and "Hal" is a halogen substituent selected from F, Cl, Br, and I. In some embodiments, the composition contains moisture exceeding about 100 ppb as an impurity. In some embodiments, the layer comprises silicon nitride, silicon carbide, silicon oxide, or a mixture thereof. One aspect of the present disclosure relates to a composition comprising a molecule having P and at least one Si connected to P and an impurity, wherein the composition has a purity of less than 99.999 (w / w%) of the molecule, the composition contains more than 1 ppm (w / w%) of impurities of oxygen, carbon, nitrogen, sulfur, or metal, and the molecule comprises only atoms selected from P, Si, and H, or halides selected from F, Cl, Br, and I. One aspect of the present disclosure relates to a composition comprising a molecule having P and at least one Si connected to P and an impurity, wherein the composition has a purity of less than 99.999 (w / w%) of the molecule, the composition contains more than 1 ppm (w / w%) of impurities of oxygen, nitrogen, sulfur or metal, and the molecule comprises only atoms selected from P, Si, and H, or halides selected from F, Cl, Br, and I. Another aspect of the present disclosure relates to a method for producing a chemical precursor having a structure according to the following general formula. PX n (SiR3) 3-n In the formula, P is phosphorus; Si is silicon bonded to phosphorus by Si-P bonds; n is an integer with a value of 0, 1, or 2; X is a substituent bonded to phosphorus, selected from the group consisting of hydrocarbon groups, halogens, hydrogen, amino groups, alkoxy groups, alkyl groups, and aryl groups; R is a substituent bonded to Si, selected from the group consisting of hydrogen, halogen, hydrocarbon group, alkoxy group, silyl group, alkyl group, and aryl group; Among the formulas, each X and R is selected independently, and The method is Step of forming an intermediate product; and It includes a step of forming a chemical precursor, The intermediate product contains at least one aromatic group. In some embodiments, the step of forming an intermediate product a) a step of reacting a starting product comprising silicon bonded to a halogen atom and an aromatic group with an alkali metal atom, wherein the halogen atom is substituted with an alkali metal atom; and b) A step of reacting the molecule with phosphorus halide after the reaction of step a) is completed, wherein the alkali metal is substituted with a phosphorus atom. In some embodiments, the step of forming a chemical precursor c) a step of reacting an intermediate molecule with TfOH, wherein the aromatic group is substituted with an OTf group; and c) A step of reacting the molecule with an alkali metal hydride after the reaction of step c) is completed, wherein the OTf group is substituted with hydrogen, and A chemical precursor is formed. In some embodiments, the step of forming a chemical precursor c) a step of reacting an intermediate molecule with TfOH, wherein the phenyl group is substituted with an OTf group; and d) a step of reacting the molecule with MX after the reaction of step c) is completed, wherein the OTf group is substituted with X, and In the formula, X is selected from the group consisting of Cl, Br, I, and alkyl groups, and M is selected from the group consisting of Li, Na, K, Rb, Cs, Mg, Ca, and NR4, and R is selected from the group consisting of hydrogen, halogen, hydrocarbyl group, alkoxy group, silyl group, alkyl group, and aryl group, and A chemical precursor is formed. In some embodiments, the chemical precursor has the following general formula, and In the formula, X is selected from the group consisting of Cl, Br, I and H and alkyl groups. In some embodiments, the chemical precursor includes trisilylphosphine. In some embodiments, the intermediate molecule includes 1,3-diphenyl-2-(phenylsilyl)disilaphosphane. In some embodiments, the starting product comprises chloro(phenyl)silane. In some embodiments, the step of forming an intermediate product is performed in a first reaction chamber. In some embodiments, the step of forming a chemical precursor is performed in a second reaction chamber. In some embodiments, during the step of forming an intermediate product, the reaction chamber is cooled, heated, or maintained at room temperature. In some embodiments, during the step of forming a chemical precursor, the reaction chamber is cooled, heated, or maintained at room temperature. In some embodiments, the process step during the formation of the intermediate product and chemical precursor is performed under continuous mixing. Another aspect of the present disclosure relates to a vapor transfer vessel comprising a film-forming composition for depositing an amorphous silicon and non-metal-containing layer by PEALD. The vapor transfer vessel comprises an outer wall surrounding a cavity for storing the film-forming composition and a gas outlet for allowing vapor of the film-forming composition to be discharged out of the cavity. A vessel comprising a chemical precursor having a structure according to the following general formula: PX n (SiR3) 3-n In the formula, P is phosphorus; Si is silicon bonded to phosphorus by Si-P bonds; n is an integer with a value of 0, 1, or 2; X is a substituent bonded to phosphorus, selected from the group consisting of hydrocarbon groups, halogens, hydrogen, amino groups, alkoxy groups, alkyl groups, and aryl groups; R is a substituent bonded to Si, selected from the group consisting of hydrogen, halogen, hydrocarbon, alkoxy, silyl, alkyl, and aryl groups. The vessel is configured to supply the vapor of the chemical precursor to the semiconductor processing unit chamber. R and X can each be independently selected from the aforementioned groups. The purity of the composition is less than 99.9 (w / w%); and the composition contains at least one impurity selected from a list consisting of oxygen-containing, carbon-containing, nitrogen-containing, sulfur-containing, and metal-containing impurities in excess of 1 ppm (w / w%). In some embodiments, the vapor transfer vessel further comprises a conduit extending to a gas inlet and a fixed point within the cavity. The conduit may extend into the cavity and into the membrane-forming composition to allow the carrier gas to pass through the membrane-forming composition. Alternatively, the conduit may extend into the cavity to a point above the membrane-forming composition to allow the carrier gas to pass over the surface of the membrane-forming composition. In some embodiments, the steam delivery vessel further includes a probe member. The probe member may include one or more temperature sensors and / or one or more level sensors and one or more pressure sensors. In some embodiments, the outer wall and cavity of the vapor transfer vessel are formed of stainless steel. In some embodiments, the vessel is suitable for attachment to a vapor deposition reactor. The present invention further describes a semiconductor processing apparatus. The apparatus includes a reaction chamber comprising a substrate support for supporting a substrate; a heater configured and arranged to heat the substrate within the reaction chamber; a plasma module comprising a radio frequency power source configured and arranged to generate plasma; a plasma gas source fluidly connected to the plasma module; a first precursor source fluidly connected to the reaction chamber through one or more precursor valves; and a controller configured to cause the semiconductor processing apparatus to perform the method described above. The present invention further describes a semiconductor processing apparatus. The apparatus includes a reaction chamber comprising a substrate support for supporting a substrate; a heater configured and arranged to heat the substrate within the reaction chamber; a plasma module comprising a radio frequency power source configured and arranged to generate plasma; a plasma gas source fluidly connected to the plasma module; a silicon precursor source fluidly connected to the reaction chamber through one or more precursor valves; a phosphorus precursor source fluidly connected to the reaction chamber through one or more precursor valves; and a controller configured to enable the semiconductor processing apparatus to perform the method described above. These and other embodiments will be easily and clearly understood by those skilled in the art from the following detailed description of specific embodiments with reference to the accompanying drawings. The present invention is not limited to any specific embodiments disclosed. Brief explanation of the drawing A more complete understanding of the embodiments of the present disclosure can be achieved by referring to the detailed description and claims in conjunction with the following exemplary drawings. FIG. 1 illustrates a schematic diagram of one embodiment (100) of a system as described herein. FIG. 2 illustrates a schematic diagram of another embodiment (200) of the system as described herein. FIG. 3 illustrates a schematic diagram of another embodiment (300) of the system as described herein. FIG. 4 is a schematic diagram of a plasma-enhanced atomic layer deposition apparatus suitable for depositing a structure and / or performing a method according to at least one embodiment of the present disclosure. FIG. 5 shows a schematic representation of one embodiment of the method as described herein. FIG. 6 shows a schematic representation of one embodiment of the method as described herein. FIG. 7 illustrates a schematic diagram of a substrate (700) including a gap (710). Figure 8 shows a general synthesis method of a chemical precursor. Figure 9 shows a method for synthesizing a chemical precursor. It should be understood that the elements of the drawings are depicted in a simplified and clear manner and are not necessarily depicted in actual proportion. For example, to aid in understanding the embodiments illustrated in this disclosure, the dimensions of some components in the drawings may be exaggerated compared to other components. Specific details for implementing the invention Although specific embodiments and examples are disclosed below, those skilled in the art will understand that the scope of the invention extends to the embodiments and / or uses of the invention specifically disclosed and obvious variations and equivalents thereof. Accordingly, the scope of the disclosed invention should not be limited by the specific embodiments disclosed below. The description of exemplary embodiments of methods, structures, elements, and systems provided below is merely illustrative and intended only for illustrative purposes; the following description is not intended to limit the scope of the disclosure or claims. Furthermore, citing multiple embodiments having specified features is not intended to exclude other embodiments having additional features or other embodiments including other combinations of specified features. For example, various embodiments are presented as exemplary embodiments and may be cited in dependent claims. Unless otherwise noted, exemplary embodiments or their components may be combined or applied separately. In this disclosure, “gas” may include materials that are gases at normal temperature and pressure (NTP), vaporized solids, and / or vaporized liquids, and may consist of a single gas or a mixture of gases depending on the context. Gases other than process gases, i.e., gases introduced without passing through gas distribution assemblies, other gas distribution devices, etc., may be used, for example, to seal reaction spaces and may include sealing gases such as noble gases. In some cases, the term “precursor” may refer to compounds that participate in chemical reactions to produce other compounds, and in particular, compounds that constitute the basic framework of a membrane matrix or membrane; the term “reactant” may be used interchangeably with the term precursor. Exemplary gases may include precursors and reactants. As used herein, the term “comprising” indicates that it includes a specific feature, but does not exclude the presence of other features unless it prevents the practice of the claims or embodiments. In some embodiments, the term “comprising” includes “constituting”. As used herein, the term “constituting” indicates that the device / method / product has no further features other than those described following the expression. Where the term “constituting” is used to refer to a chemical compound or substance, it indicates that the chemical compound contains only the listed components. As used herein, the term substrate may refer to any underlying material(s) that may be used to form a device, circuit, or film, or upon which such may be formed. The substrate may comprise a bulk material such as silicon (e.g., single-crystal silicon), other Group IV materials such as germanium, or other semiconductor materials such as Group II-VI or Group III-V semiconductor materials, and may comprise one or more layers disposed on or below the bulk material. Additionally, the substrate may comprise various features, such as indentations, protrusions, etc., formed within or upon at least a portion of the layers of the substrate. For example, the substrate may comprise a bulk semiconductor material and an insulating or dielectric material layer disposed upon at least a portion of the bulk semiconductor material. Additionally or alternatively, an exemplary substrate may comprise a bulk semiconductor material and a conductive layer disposed upon at least a portion of the bulk semiconductor material. As used herein, "step coverage" is defined as the value obtained by dividing the layer growth rate of the distal end for a concave opening by the corresponding layer growth rate of the proximal end for a concave opening, and is expressed as a percentage. Step coverage provides a measure of the conformity of the layer. As used herein, "vapor transfer vessel" refers to a vessel suitable for or configured for the vapor transfer of a substance contained therein. A vapor transfer vessel comprises an outer wall surrounding a cavity for storing and / or holding the substance and a fluid outlet for allowing the vapor of the substance to be discharged out of the cavity. The substance contained within the cavity may be a composition suitable for vapor deposition or etching methods. For example, the substance contained within the cavity may comprise, where applicable, one or more precursors, one or more reactants, one or more etchants, or one or more surface treatment agents. The substance contained within the cavity may be a homogeneous or heterogeneous mixture. The substance contained within the cavity may be in solid form, liquid form, gaseous form, or a combination thereof. A vapor transfer vessel may be a vapor drawing vessel, a carrier gas vessel, a double-walled vessel, a sublimation vessel, and / or other configurations. As used herein, the terms “film” and / or “layer” may refer to any continuous or discontinuous structure and material, such as a material deposited by the method disclosed herein. For example, the film and / or layer may comprise a two-dimensional material, a three-dimensional material, nanoparticles, a partial or whole molecular layer or a partial or whole atomic layer or an atomic and / or molecular cluster. The film or layer may be partially or wholly composed of a plurality of dispersed atoms on a substrate surface and / or a plurality of dispersed atoms embedded within the substrate and / or embedded in a device fabricated on said substrate. The film or layer may comprise a material or layer having pinholes and / or isolated islands. The film or layer may be at least partially continuous. The film or layer may be patterned, for example, subdivided, and may be included in a plurality of semiconductor devices. As used herein, the structure may be a substrate as described herein or may include such a substrate. The structure may include one or more layers placed on the substrate, such as one or more layers formed according to a method as described herein. The device portion and the wiring may be the structure or include the structure. As used herein, the term “deposition process” may refer to introducing a precursor (and / or reactant) into a reaction chamber to deposit a layer on a substrate. “Cycling deposition process” is an example of a “deposition process”. The term “cyclic deposition process” or “cyclic deposition process” may refer to sequentially exposing a substrate to precursors (and / or reactants) introduced into a reaction chamber, and exposing the substrate to plasma-generating species to deposit a layer on the substrate, and includes processing techniques such as plasma-enhanced atomic layer deposition (PEALD). The term "plasma-enhanced atomic layer deposition" may refer to a deposition process in which a deposition cycle, typically a plurality of consecutive deposition cycles, is performed within a process chamber. Generally, in the case of the PEALD process, during each cycle, a precursor is introduced into the reaction chamber and chemisorbed onto the deposition surface (e.g., a substrate surface that may include a material previously deposited from a previous PEALD cycle or other materials), forming a monolayer or sub-monolayer that does not readily react with additional precursors (i.e., a self-limiting reaction). Subsequently, the substrate is exposed to plasma-generated species that can be generated using any plasma, such as direct, indirect, or remote plasma. The plasma can be generated capacitively or inductively using microwave radiation or other means. The plasma-generated species convert the chemisorbed precursor on the deposition surface into the desired material. During one or more cycles, for example, after each step or pulse of each cycle, a purge step may be utilized to remove excess precursor from the process chamber and / or remove excess plasma-generated species and / or reaction byproducts from the reaction chamber. As used herein, the term "purge" may refer to a procedure in which a purge gas is supplied to the reaction chamber between a precursor pulse and a plasma pulse, or between a precursor pulse and a reactant pulse. It should be understood that during the purge, the substrate is not exposed to plasma-generated species. For example, if direct plasma is used, the plasma may be switched off during the purge. For example, a purge using a purge gas, such as nitrogen or a noble gas, may be supplied between the precursor pulse and the reactant pulse to avoid or at least minimize gas-phase interactions between the precursor and the reactant. It should be understood that the purge may be applied temporally and / or spatially. For example, in the case of a temporal purge, the purge steps may be used in a temporal sequence, such as a step of supplying a first precursor to the reaction chamber, a step of supplying a purge gas to the reaction chamber, and a step of supplying a second precursor to the reaction chamber, wherein the substrate on which the layer is deposited does not move. For example, in the case of spatial purging, the purging step may take the form of a step of moving the substrate from a first location where a first precursor is continuously supplied to a second location where a second precursor is continuously supplied through a purging gas curtain. As used herein, "precursor" may be a gas and may include a gas or material represented by a chemical formula containing an element that may be incorporated during a deposition process as described herein. The term "nitrogen reactant" may refer to a gas or a substance capable of becoming gas that can be represented by a chemical formula containing nitrogen. In some cases, the chemical formula includes nitrogen and hydrogen. In some cases, the nitrogen reactant does not contain diatomic nitrogen. Additionally, in this disclosure, any two values ​​of a variable may constitute an executable range of the variable, and any indicated range may include or exclude endpoints. Additionally, any value of the indicated variable may refer to an exact value or an approximate value (whether indicated as "approximately"), may include equivalents, and may refer to an average value, a median value, a representative value, a majority value, etc. Also, in this disclosure, the terms "including," "constituted by," and "having" independently refer to "typically or extensively including," "including," "essentially composed by," or "constituted by" in some embodiments. In this document, the element symbols of elements in the periodic table are used. For example, "P" refers to phosphorus, "Si" refers to silicon, "H" refers to hydrogen, "C" refers to carbon, "N" refers to nitrogen, and "Li" refers to lithium. Throughout this disclosure, abbreviations of the following chemical structures or groups are used in specific places: "Me" represents methyl (-CH3); "Et" represents ethyl (-CH2CH3); "nPr" represents n-propyl (-CH2CH2CH3); "iPr" represents iso-propyl (-CH(CH3)2); "nBu" represents n-butyl (-CH2CH2CH2CH3); and "sBu" represents sec-butyl (-CH2CH2CH2CH3). - It represents (CH3)CH2CH3); "iBu" is iso-butyl (-CH -2 CH(CH3)CH3); "tBu" represents tert-butyl (-C(CH3)3); and "Ph" represents phenyl (-C6H5). In the present disclosure, any defined meaning does not necessarily exclude the general and conventional meaning in some embodiments. The present invention describes a method that may be used to form a silicon-containing material on a substrate. A single-crystal silicon wafer may be a suitable substrate. Other substrates, such as a single-crystal germanium wafer, a gallium arsenide wafer, quartz, sapphire, glass, steel, aluminum, silicon-on-insulator substrates, plastics, etc., may also be suitable. The substrate may comprise a surface layer on which a layer is formed that is deposited by the method as described herein. A suitable surface layer comprises a conductive layer such as a metal or a certain nitride. Suitable nitrides include titanium nitride. Other suitable surface layers comprise a high dielectric constant layer such as hafnium oxide. In some embodiments, the substrate comprises a hydroxyl group termination surface. That is to say, in some embodiments, the substrate comprises OH groups on its surface. This can advantageously improve the deposition of the silicon-containing layer using the method as described herein. The method includes the step of placing a substrate on a substrate support within a reaction chamber. Then, the method includes the step of performing a plurality of deposition cycles. The deposition cycles include a first precursor pulse and a plasma pulse. The first precursor pulse includes the step of exposing the substrate to the first precursor. The plasma pulse may suitably include the step of exposing the substrate to a plasma treatment. Thus, a silicon-containing layer is formed on the substrate. The first precursor pulse and the plasma pulse should be understood to be executed sequentially, that is, in a non-overlapping manner. Optionally, spreading is performed between the first precursor pulse and the plasma pulse. In some embodiments, the first precursor pulse and the plasma pulse are executed non-sequentially, that is, the pulses overlap and there is no purge between pulse injections. Optionally, a purge pulse may be executed after a deposition cycle. That is, a purge pulse may be executed after one or more deposition cycles including a precursor pulse and a plasma pulse have been executed. The silicon-containing layer may be composed of silicon or substantially composed of silicon. In other embodiments, the silicon-containing layer comprises one or more additional elements such as oxygen, carbon, and nitrogen. Thus, in some embodiments, the silicon-containing layer may comprise one or more of silicon oxide, amorphous silicon, polycrystalline silicon, silicon carbide, silicon nitride, silicon oxy-nitride, silicon carbonitride, and silicon oxy-carbonitride. In some embodiments, the silicon-containing layer contains silicon nitride. In some embodiments, the layer is formed on a three-dimensional structure, such as a trench structure. In some embodiments, the first precursor has the following general formula. PX n (SiR3) 3-n In the formula, P is phosphorus, Si is silicon bonded to phosphorus by a Si-P bond, n is an integer having a value of 0, 1, or 2, X is a substituent bonded to phosphorus selected from the group consisting of a hydrocarbyl group, a halogen, hydrogen, an amino group, an alkoxy group, an alkyl group, and an aryl group, and R is a substituent bonded to Si selected from the group consisting of a hydrogen, a halogen, a hydrocarbyl group, an alkoxy group, a silyl group, an alkyl group, and an aryl group. Each R and X is selected independently. In some embodiments, X is selected from the group consisting of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, n-pentyl, 2-pentyl, 3-pentyl, isopentyl, tert-pentyl, cyclopentyl, n-hexyl, 2-hexyl, 3-hexyl, cyclohexyl, phenyl, fluoro, chloro, bromo, iodo, amino, dimethylamino, diethylamino, ethylmethylamino, diisopropylamino, tert-butylamino, methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, and tert-butoxy. In some embodiments, R is hydrogen. In some embodiments, R is a halogen selected from F, Cl, Br, or I. In some embodiments, R is a hydrocarbyl group comprising 1 to 10 carbon atoms. In some embodiments, R is an alkoxy group comprising 1 to 6 carbon atoms. In some embodiments, R is a silyl, disilyl, or trisilyl group. In some embodiments, the R group is independently selected from hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, n-pentyl, 2-pentyl, 3-pentyl, isopentyl, tert-pentyl, cyclopentyl, n-hexyl, 2-hexyl, 3-hexyl, cyclohexyl, phenyl, fluorine, chlorine, bromine, iodine, methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, tert-butoxy, -SiH3, -Si2H5, or -Si3H7. In some embodiments, the first precursor has a structure according to the following chemical formula i), and i) In the formula, P is phosphorus, Si is silicon bonded to phosphorus by a Si-P bond, X is a substituent bonded to phosphorus selected from the group consisting of a hydrocarbyl group, a halogen, hydrogen, an amino group, an alkoxy group, an alkyl group, and an aryl group, and R is a substituent bonded to Si selected from the group consisting of a hydrogen, a halogen, a hydrocarbyl group, an alkoxy group, a silyl group, an alkyl group, and an aryl group. In some embodiments, X is selected from the group consisting of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, n-pentyl, 2-pentyl, 3-pentyl, isopentyl, tert-pentyl, cyclopentyl, n-hexyl, 2-hexyl, 3-hexyl, cyclohexyl, phenyl, fluoro, chloro, bromo, iodo, amino, dimethylamino, diethylamino, ethylmethylamino, diisopropylamino, tert-butylamino, methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, and tert-butoxy. In some embodiments, R is hydrogen. In some embodiments, R is a halogen selected from F, Cl, Br, or I. In some embodiments, R is a hydrocarbyl group comprising 1 to 10 carbon atoms. In some embodiments, R is an alkoxy group comprising 1 to 6 carbon atoms. In some embodiments, R is a silyl, disilyl, or trisilyl group. In some embodiments, the R group is independently selected from hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, n-pentyl, 2-pentyl, 3-pentyl, isopentyl, tert-pentyl, cyclopentyl, n-hexyl, 2-hexyl, 3-hexyl, cyclohexyl, phenyl, fluorine, chlorine, bromine, iodine, methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, tert-butoxy, -SiH3, -Si2H5, or -Si3H7. In some embodiments, the first precursor has a structure according to the following chemical formula ii), and ii) In the formula, P is phosphorus, Si is silicon bonded to phosphorus by a Si-P bond, X is a substituent bonded to phosphorus selected from the group consisting of a hydrocarbyl group, a halogen, hydrogen, an amino group, an alkoxy group, an alkyl group, and an aryl group, and R is a substituent bonded to Si selected from the group consisting of a hydrogen, a halogen, a hydrocarbyl group, an alkoxy group, a silyl group, an alkyl group, and an aryl group. Each R and X is selected independently. In some embodiments, X is selected from the group consisting of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, n-pentyl, 2-pentyl, 3-pentyl, isopentyl, tert-pentyl, cyclopentyl, n-hexyl, 2-hexyl, 3-hexyl, cyclohexyl, phenyl, fluoro, chloro, bromo, iodo, amino, dimethylamino, diethylamino, ethylmethylamino, diisopropylamino, tert-butylamino, methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, and tert-butoxy. In some embodiments, R is hydrogen. In some embodiments, R is a halogen selected from F, Cl, Br, or I. In some embodiments, R is a hydrocarbyl group comprising 1 to 10 carbon atoms. In some embodiments, R is an alkoxy group comprising 1 to 6 carbon atoms. In some embodiments, R is a silyl, disilyl, or trisilyl group. In some embodiments, the R group is independently selected from hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, n-pentyl, 2-pentyl, 3-pentyl, isopentyl, tert-pentyl, cyclopentyl, n-hexyl, 2-hexyl, 3-hexyl, cyclohexyl, phenyl, fluorine, chlorine, bromine, iodine, methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, tert-butoxy, -SiH3, -Si2H5, or -Si3H7. In some embodiments, the first precursor has a structure according to formula iii), and iii) In the formula, P is phosphorus, Si is silicon bonded to phosphorus by a Si-P bond, and R is a substituent bonded to Si selected from the group consisting of hydrogen, halogen, hydrocarbon group, alkoxy group, silyl group, alkyl group and aryl group. Each R is selected independently. In some embodiments, R is hydrogen. In some embodiments, R is a halogen selected from F, Cl, Br, or I. In some embodiments, R is a hydrocarbyl group comprising 1 to 10 carbon atoms. In some embodiments, R is an alkoxy group comprising 1 to 6 carbon atoms. In some embodiments, R is a silyl, disilyl, or trisilyl group. In some embodiments, the R group is independently selected from hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, n-pentyl, 2-pentyl, 3-pentyl, isopentyl, tert-pentyl, cyclopentyl, n-hexyl, 2-hexyl, 3-hexyl, cyclohexyl, phenyl, fluorine, chlorine, bromine, iodine, methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, tert-butoxy, -SiH3, -Si2H5, or -Si3H7. In some embodiments, the first precursor comprises a molecule comprising a phosphorus atom bonded to three substituents. At least one of the substituents comprises a silicon atom. Possible other substituents are independently selected from the group consisting of a hydrocarbyl group, a halogen, hydrogen, an amino group, an alkoxy group, an alkyl group, and an aryl group. At least one silicon atom is additionally bonded to one or more substituents independently selected from the group consisting of a hydrogen, a halogen, a hydrocarbyl group, an alkoxy group, a silyl group, an alkyl group, and an aryl group. In some embodiments, the first precursor is selected from the group consisting of trisilyl phosphine, tris(trimethylsilyl)phosphine, silyl phosphine, disilyl phosphine, bis(disilanyl)phosphine, disilanyl phosphine, tris(trisilanyl)phosphine, bis(trisilanyl)phosphine, trisilanyl phosphine, dichlorosilyl phosphine, chlorodisilyl phosphine, bis(disilanyl)chlorophosphine, disilanyl dichlorophosphine, trisilanyl dichlorophosphine, bis(trisilanyl)chlorophosphine, dimethylsilyl phosphine, disilylmethyl phosphine, bis(disilanyl)methyl phosphine, disilanyl dimethyl phosphine, tri(disilanyl)phosphine, trisilanyl dimethyl phosphine, and bis(trisilanyl)methyl phosphine. A method as disclosed herein using trisilylphosphine as a first precursor can advantageously enable a self-limiting plasma-enhanced atomic layer deposition (PEALD) process exhibiting self-limiting growth up to a temperature of 500°C. PEALD growth at such high temperatures can provide a silicon-containing layer with excellent etch resistance, a high growth rate per cycle, and high compliance. In some embodiments, the method described herein may be a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process. In a CVD process, precursors and / or reactants are at least partially and simultaneously fed into a reaction chamber. In some embodiments, the first precursor may be used together with a nitrogen-containing reactive species in an embodiment as described herein to form a silicon-containing layer. In some embodiments, reactive species are generated by a plasma of reactants, e.g., a nitrogen-containing plasma. In some embodiments, the first precursor pulse includes a precursor subpulse and a precursor sub-purge. Then, the precursor subpulse and the precursor sub-purge may be repeated a preset number of times, for example, at least 1 time to a maximum of 10 times, until the precursor pulse ends. The present invention further describes a method for depositing a silicon-containing layer on a substrate in a reaction chamber. The method comprises the steps of providing a silicon precursor in a vapor phase in a reaction chamber, providing a phosphorus precursor in a vapor phase in a reaction chamber, and providing a nitrogen-containing reactive species in a reaction chamber. In some embodiments, the silicon precursor comprises silicon and at least one substituent selected from the group consisting of hydrogen, halogen, and nitrogen-containing substituents. In some embodiments, the nitrogen-containing substituent is selected from the group consisting of amino groups, alkyl amino groups, and dialkyl amino groups. In some embodiments, the silicon precursor is SiH4, Si2H6, Si3H8, cyclopentasilan, cyclohexasilane, neopentasilan, SiH3Cl, SiH2Cl2, SiHCl3, SiCl4, SiH3Br, SiH2Br2, SiHBr3, SiBr4, SiH3I, SiH2I2, SiHI3, SiI4, Si(NMe2)4, SiH(NMe2)3, SiCl(NMe2)3, Si(NH2)(NMe3)3, SiH2(NEt2)2, SiH2(NHtBu)2, SiH3[N(iPr2)], SiH3[N(sBu2)], N(SiH3)3, N(SiMe3)3, NH(SiH3)2, NH(SiMe3)2, Si2(NHEt)6, NH[SiH2N(SiH3)2]2, It is selected from the group consisting of SiH2[N(SiH3)2]2. In some embodiments, the phosphorus precursor comprises phosphorus, and a substituent selected from the group consisting of hydrogen, halogen, and nitrogen-containing substituents. In some embodiments, the nitrogen-containing substituent is selected from the group consisting of amino groups, alkyl amino groups, and dialkyl amino groups. In some embodiments, the phosphorus precursor is PH3, t BuPH2, EtPH2, phenylphosphine, 1,2-diphosphinoethane, (2-methylpropyl)phosphine, cyclohexylphosphine and 1,2-diphosphinobenzene, PCl3, PCl5, PBr3, PBr5, PI3, MePCl2, EtPCl2, PrPCl2, iPrPCl2, BuPCl2, t BuPCl2, t Bu2PCl, i Pr2PCl, Et2PCl, Me2PCl, s Bu2PCl, t BuMePCl, t It is selected from the group consisting of Bu2PBr, P(NMe2)3, PH(NMe2)2, PH2(NMe2), P(NEt2)3, PCl2(NEt2), PCl[N(iPr)2]2, tris(N-pyrrolidinyl)phosphine, PCl(NEt2)2, PCl2(NMe2), PCl2[N(iPr)2], P(NH)(NMe2)3, PCl(NMe2)2, and PMe(NMe2)2. In some embodiments, the plasma is a directly capacitively coupled plasma, and the plasma pulse includes a plasma-on subpulse and a plasma-off subpulse. Plasma is generated during the plasma-on subpulse, and plasma generation is stopped during the plasma-off subpulse. The plasma pulse may appropriately include a step of exposing the substrate to plasma treatment. The plasma treatment includes a step of generating plasma. The plasma may be one of remote plasma, indirect plasma, and direct plasma. Plasma can be appropriately generated by a plasma gas. The plasma gas is a gas, vapor, gas mixture, or combination thereof supplied to the space where the plasma is generated. Suitable plasma gases include H2, N2, and noble gases such as He and Ar. In some embodiments, reactive species are generated directly on the substrate. In other words, the plasma is a directly capacitively coupled plasma generated between the showerhead injector and the substrate. In some embodiments, the directly capacitively coupled plasma may use a plasma power of at least 175 W to a maximum of 300 W, or up to 1000 W. In some embodiments, the reactive species comprises at least one compound selected from the group consisting of nitrogen, nitrogen atoms, nitrogen plasma, nitrogen radicals, N*, NH*, and NH2* radicals. In some embodiments, the reactive species comprises at least one compound selected from the group consisting of oxygen, oxygen radicals, or other oxygen-containing reactive species. In some embodiments, the reactive species does not include oxygen-containing reactive species or nitrogen-containing reactive species. In some embodiments, the reactive gas includes hydrogen or a noble gas. In some embodiments, the noble gas may include argon. In some embodiments, the plasma is N2 plasma. In some embodiments, the plasma is H2 / N2 plasma. In some embodiments, the plasma is ammonia plasma. In some embodiments, the reactive species are generated away from the substrate. In some embodiments, a remote plasma generator is used to generate the reactive species. In some embodiments, the substrate is maintained at a temperature of at least 100°C to a maximum of 600°C, or at least 300°C to a maximum of 500°C, or at least 300°C to a maximum of 400°C, or about 350°C during the deposition cycle. In some embodiments, the method includes the step of bringing a first precursor from a first precursor source into a reaction chamber. The first precursor source may be appropriately maintained at a temperature of at least 20°C to a maximum of 200°C, or at least 20°C to a maximum of 100°C, or at least 30°C to a maximum of 80°C, or at least 40°C to a maximum of 60°C, e.g., 50°C. In some embodiments, the reaction chamber is maintained at a pressure of at least 10 Pa to a maximum of 8000 Pa, at least 40 Pa to a maximum of 2000 Pa, or at least 60 Pa to a maximum of 1000 Pa, or at least 300 Pa to a maximum of 3000 Pa, or at least 700 Pa to a maximum of 2000 Pa. A silicon-containing layer having a desired thickness can be formed on a substrate by performing an appropriate number of deposition cycles. The total number of deposition cycles included in the method as described herein depends, among other things, on the desired total layer thickness. In some embodiments, the method comprises at least 2 to 5 deposition cycles, or at least 5 to 10 deposition cycles, or at least 10 to 20 deposition cycles, or at least 20 to 50 deposition cycles, or at least 50 to 100 deposition cycles, or at least 100 to 200 deposition cycles, or at least 200 to 500 deposition cycles, or at least 500 to 1000 deposition cycles, or at least 1000 to 2000 deposition cycles, or at least 200 to 500 deposition cycles, or at least 500 to 1000 deposition cycles, or at least 1000 to 2000 deposition cycles, or at least 2000 to 5000 deposition cycles, or at least 5000 to 10000 deposition cycles. For example, the silicon-containing layer may have a thickness of at least 1 nm to a maximum of 20 nm, or at least 2 nm to a maximum of 50 nm, such as 2 nm, 5 nm, 10 nm, and 15 nm. Accordingly, a silicon-containing material having a thickness of, for example, 0.3 to 2 angstroms per cycle can be formed. In some embodiments, the layer has a growth per cycle of 0.3 to 2.0 A / cycle. In some embodiments, the layer has a growth per cycle of 0.5 to 1.8 A / cycle. In some embodiments, the layer has a growth per cycle of 0.7 to 1.6 A / cycle. In some embodiments, the layer has a growth per cycle of 0.9 to 1.4 A / cycle. In some embodiments, the layer contains less than 20%, or less than 10%, or less than 5% of phosphorus impurities. In some embodiments, the layer contains 0 to 5% of phosphorus impurities. In some embodiments, the layer contains less than 4%, or less than 3%, or less than 2%, or less than 1% or less than 0.5% of phosphorus impurities. In some embodiments, the layer contains 100 ppm to 4% of phosphorus impurities. In some embodiments, the layer contains less than 1% of phosphorus impurities. In some embodiments, the layer contains less than 1000 ppm of phosphorus impurities. In some embodiments, the layer contains no phosphorus impurities. All percentages presented in this paragraph are atomic percentages calculated based on the total number of atoms in the deposited layer. In some embodiments, the deposited layer has a carbon content of up to 50%. In some embodiments, the carbon content is 0 to 35%, or 0 to 20%, or 0 to 15%, or 0 to 10%. In some embodiments, the carbon content is <5%, or <3%, or <2%, or <1%, or 0.5%, or <0.1%. In some embodiments, the carbon content is >1 ppm, or >0.001%, or >0.01%, or 0.1%, or >0.5%. All percentages presented in this paragraph are atomic percentages calculated based on the total number of atoms in the deposited layer. In some embodiments, the deposited layer has a hydrogen content of 0 to 35%, or 0 to 20%, or 0 to 15%, or 0 to 10%. In some embodiments, the hydrogen content is less than 5%. All percentages presented in this paragraph are atomic percentages calculated based on the total number of atoms in the deposited layer. In some embodiments, the deposited layer has a nitrogen content of 0 to 60%, or 0 to 50%, or 0 to 35%, or 0 to 20%, or 0 to 15%, or 0 to 10%. All percentages presented in this paragraph are atomic percentages calculated based on the total number of atoms in the deposited layer. In some embodiments, the deposited layer has a silicon content of greater than 95%, or greater than 90%, or greater than 80%, or greater than 70%, or greater than 60%, or greater than 50%, or greater than 40%, or greater than 30%, or greater than 20%. All percentages presented in this paragraph are atomic percentages calculated based on the total number of atoms in the deposited layer. According to some embodiments, a silicon-containing layer having various wet etching rates (WER) may be deposited. When using a blanket WER (nm / min) at 0.5% dHF, the WER value of the silicon nitride film may be less than about 5, preferably less than about 4, more preferably less than about 2, and most preferably less than about 1. In some embodiments, it may be less than about 0.3. In some embodiments, the wet etching rate of the layer is less than 2.5 nm / min in 1.5% diluted hydrofluoric acid. In some embodiments, the wet etching rate of the layer is less than 1.5 nm / min in 1.5% diluted hydrofluoric acid. In some embodiments, a silicon-containing layer having compressive stress may be deposited. In some embodiments, a silicon-containing layer having tensile stress may be deposited. In some embodiments, the stress is -2000 to +2000 MPa. In some embodiments, the stress is -100 to +100 MPa. In some embodiments, a silicon-containing layer having an elastic modulus may be deposited. In some embodiments, the elastic modulus is greater than 20 GPa, or greater than 50 GPa, or greater than 100 GPa, or greater than 200 GPa, or greater than 300 GPa. In some embodiments, the step coverage of the layer is greater than about 80%. In some embodiments, the step coverage of the layer is greater than about 90%. In some embodiments, the deposited silicon-containing layer has thickness non-uniformity and compositional non-uniformity across the three-dimensional structure. That is, the composition of the layer and the layer is not the same in all parts or regions of the three-dimensional structure. In some embodiments, the thickness non-uniformity and compositional non-uniformity are less than 30%, or less than 15%, or less than 10%, or less than 5%, or less than 3%, or less than 2%, or less than 1%, or less than 0.5%, or less than 0.1%. The present invention further discloses a silicon-containing layer obtained by depositing a precursor having a structure according to the following general formula, and PX n (SiR3) 3-n In the formula, P is phosphorus, Si is silicon bonded to phosphorus by a Si-P bond, n is an integer having a value of 0, 1, or 2, X is a substituent bonded to phosphorus selected from the group consisting of a hydrocarbyl group, a halogen, hydrogen, an amino group, an alkoxy group, an alkyl group, and an aryl group, and R is a substituent bonded to Si selected from the group consisting of a hydrogen, a halogen, a hydrocarbyl group, an alkoxy group, a silyl group, an alkyl group, and an aryl group. Each R and X is selected independently. The present invention further describes a composition configured to deposit a layer, wherein the composition comprises a chemical precursor having a structure according to the following general formula, and PX n (SiR3) 3-n In the formula, P is phosphorus, Si is silicon bonded to phosphorus by a Si-P bond, n is an integer having a value of 0, 1, or 2, X is a substituent bonded to phosphorus selected from the group consisting of a hydrocarbyl group, a halogen, hydrogen, an amino group, an alkoxy group, an alkyl group, and an aryl group, and R is a substituent bonded to Si selected from the group consisting of a hydrogen, a halogen, a hydrocarbyl group, an alkoxy group, a silyl group, an alkyl group, and an aryl group. Each R and X is selected independently. In some embodiments, the halogen may be selected from chlorine, bromine, fluorine, and iodine. In some embodiments, the chemical precursor is P(SiH2Cl)3 or P(SiH2I)3. In some embodiments, the composition has a specific level of purity measured on a weight basis of the composition. In some embodiments, the silicon precursor composition comprises at least about 50 wt% of a silicon precursor, or at least about 80 wt% of a silicon precursor, or at least about 90 wt% of a silicon precursor, or at least about 95 wt% of a silicon precursor, or at least about 97 wt% of a silicon precursor, or at least about 98 wt% of a silicon precursor, or at least about 99 wt% of a silicon precursor, or at least about 99.5 wt% of a silicon precursor, or at least about 99.9 wt% of a silicon precursor, or at least about 99.99 wt% of a silicon precursor. In some embodiments, the compositions described herein are silicon precursor compositions used in vapor deposition processes such as thermal ALD, cyclic or continuous CVD, PEALD, REALD, or PECVD. The silicon precursor compositions disclosed herein are suitable for forming silicon-containing thin films using vapor deposition methods. Accordingly, in these embodiments, the silicon precursor compositions must have a purity suitable for thin film applications. The silicon precursors must also have sufficient vapor pressure and thermal stability over the temperature range of the deposition process. By selectively introducing substituents into the silicon precursors, vapor pressure and other properties can be controlled. In some embodiments, the silicon precursor composition comprises at least about 50 wt% of a silicon precursor, or at least about 80 wt% of a silicon precursor, or at least about 90 wt% of a silicon precursor, or at least about 95 wt% of a silicon precursor, or at least about 97 wt% of a silicon precursor, or at least about 98 wt% of a silicon precursor, or at least about 99 wt% of a silicon precursor, or at least about 99.5 wt% of a silicon precursor, or at least about 99.9 wt% of a silicon precursor, or at least about 99.99 wt% of a silicon precursor. In some embodiments, the compositions described herein are used in vapor deposition processes such as thermal ALD, cyclic or continuous CVD, PEALD, REALD (radical-enhanced ALD), or PECVD, or fluid processes such as fluid CVD, or combinations thereof, to deposit silicon-containing films such as silicon nitride, silicon carbide, silicon oxide, or mixtures thereof. In some embodiments, the film is not an epitaxial film. In some embodiments, the film is not a single-crystal film. In some embodiments, the film comprises an amorphous structure. In some embodiments, the film comprises a polycrystalline structure. In some embodiments, the film comprises amorphous or polycrystalline silicon. In some embodiments, the film deposited using the composition comprises oxygen impurities derived from the composition. In some embodiments, the composition is used to deposit silicon-based dielectric or insulating films. In some embodiments, the compositions described herein are silicon precursor compositions contained in a container, such as a quartz or metal container, such as an aluminum or steel container, suitable for use in a reactor for vapor deposition processes such as thermal ALD, cyclic or continuous CVD, PEALD, REALD, or PECVD. The silicon precursor compositions in the container disclosed herein are suitable for forming silicon-containing thin films using a vapor deposition method. Accordingly, in these embodiments, the silicon precursor compositions in the container must have a purity suitable for thin film applications. The silicon precursor must also have sufficient vapor pressure and thermal stability over the temperature range of the deposition process. By selectively introducing substituents to the silicon precursor, the vapor pressure and other properties can be controlled. In some embodiments, the silicon precursor composition in the container comprises at least about 50 wt% of silicon precursor, or at least about 80 wt% of silicon precursor, or at least about 90 wt% of silicon precursor, or at least about 95 wt% of silicon precursor, or at least about 97 wt% of silicon precursor, or at least about 98 wt% of silicon precursor, or at least about 99 wt% of silicon precursor, or at least about 99.5 wt% of silicon precursor, or at least about 99.9 wt% of silicon precursor, at least about 99.99 wt% of silicon precursor, or 99.999 wt% of silicon precursor. In some embodiments, the compositions described herein are silicon precursor compositions used in vapor deposition processes such as thermal ALD, cyclic or continuous CVD, PEALD, REALD, or PECVD. Impurities contained in the composition, the silicon precursor composition, or the silicon precursor composition in a container suitable for a vapor deposition process may include, for example, oxygen, nitrogen, sulfur, metal, or carbon impurities. Impurities may include, for example, atoms or molecules of the solvent used in the synthesis method, or other atoms present in the synthesis method. The following impurity ranges include impurities contained in the composition, the silicon precursor composition, or the silicon precursor composition in a container suitable for a vapor deposition process, described in weight percentage. In some embodiments, solvent impurities comprise one or more of pentane, hexane, cyclohexane, benzene, toluene, xylene, diethyl ether, methyl tert-butyl ether, tetrahydrofuran, 1,4-dioxane, acetonitrile, chloroform, dichloromethane, carbon tetrachloride, triethylamine, pyridine, ethyl acetate, 1,2-dimethoxyethane, dimethyl sulfoxide, 1,2-dichloroethane, chlorobenzene, acetone, 2-butanone, or species molecules thereof. In some embodiments, solvent impurities comprise molecules containing oxygen, nitrogen, or sulfur, or a mixture thereof. In some embodiments, solvent impurities are impurities derived from the solvent used in the synthesis method used to form the composition. In some embodiments, the species impurities are, for example, P(SiMe3)3, SiH3Cl, SiH2Cl2, SiHCl3, SiCl4, SiHMe3, SiClMe3, P(SiH3)(SiMe3) 2, It includes P(SiH3)2(SiMe3), PCl(SiH3)2, PCl2(SiH3), PCl(SiMe3)2, PCl2(SiMe3), PCl3, PH(SiH3)2, PH2(SiH3), PH(SiMe3)2, or PH2(SiMe3). In some embodiments, the impurity is P(OSiMe3) x (SiMe3) y , P(OSiMe3) x (SiH3) y , P(OSiH3) x (SiH3)y , or P(OSiH3) x (SiMe3) y It includes, wherein x = 1 to 3 and x + y = 3. In some embodiments, the impurity is PH x (OSiMe3) y (SiMe3) z , PH x (OSiMe3) y (SiH3) z , PH x (OSiH3) y (SiH3) z , PH x (OSiH3) y (SiMe3) z It includes, wherein x = 1 or 2, y = 1 or 2, z = 0 or 1, and x + y + z = 3. In some embodiments, the impurity is P(Hal) x (OSiMe3) y (SiMe3) z , P(Hal) x (OSiMe3) y (SiH3) z , P(Hal) x (OSiH3) y (SiH3) z , P(Hal) x (OSiH3) y (SiMe3) z The formula includes, wherein x = 1 or 2, y = 1 or 2, z = 0 or 1, x + y + z = 3, and "Hal" is a halogen substituent selected from F, Cl, Br and I. In some embodiments, the species impurities comprise about ppm to about 50 wt%, about 0.001 wt% to about 20 wt%, or about 0.01 wt% to about 10 wt% of the aforementioned species impurities. The solvent impurities comprise about ppm to about 50 wt%, about 0.001 wt% to about 20 wt%, or about 0.01 wt% to about 10 wt% of the aforementioned solvent impurities. Impurities of oxygen, nitrogen, or sulfur may be individually or in combination at ppb or ppm levels or higher, and may be greater than about 100 ppb, greater than about 1 ppm, greater than about 0.001 wt%, greater than about 0.01 wt%, greater than about 0.1 wt%, greater than about 0.5 wt%, greater than about 1 wt%, or greater than about 5 wt%. In some embodiments, it is about 0.001 wt% to about 10 wt%, about 0.01 wt% to about 5 wt%, or about 0.1 wt% to about 5 wt%. In some embodiments, impurities of oxygen, nitrogen, or sulfur are individually or in combination less than about 0.01 wt%, less than about 0.1 wt%, less than about 0.5 wt%, less than about 1 wt%, or less than about 5 wt%. In some embodiments, it is about 0.001 wt% to about 10 wt%, about 0.01 wt% to about 5 wt%, or about 0.1 wt% to about 5 wt%. Metal impurities may be at a ppb or ppm level or higher. Or metal impurities may be at a ppb or ppm level or lower. Metal impurities may be greater than about 100 ppb, greater than about 1 ppm, greater than about 0.001 wt%, greater than about 0.01 wt%, greater than about 0.1 wt%, greater than about 0.5 wt%, or greater than about 1 wt%. Metal impurities may be less than about 0.001 wt%, less than about 0.01 wt%, less than about 0.1 wt%, less than about 0.5 wt%, or less than about 1 wt%. Moisture-containing impurities may be at ppb or ppm levels or higher. Or metal impurities may be at ppb or ppm levels or lower. Metal impurities may be greater than about 100 ppb, greater than about 1 ppm, greater than about 0.001 wt%, greater than about 0.01 wt%, greater than about 0.1 wt%, greater than about 0.5 wt%, or greater than about 1 wt%. Metal impurities may be less than about 0.001 wt%, less than about 0.01 wt%, less than about 0.1 wt%, less than about 0.5 wt%, or less than about 1 wt%. Carbon impurities may be at a ppb or ppm level or higher, e.g., greater than about 100 ppb, greater than about 1 ppm, greater than about 0.001 wt%, greater than about 0.01 wt%, greater than about 0.1 wt%, greater than about 0.5 wt%, greater than about 1 wt%, or greater than about 5 wt%. In some embodiments, carbon impurities may be from about 0.001 wt% to about 20 wt%, from about 0.01 wt% to about 20 wt%, or from about 0.1 wt% to about 10 wt%. In some embodiments, carbon impurities comprise less than about 0.01 wt%, less than about 0.1 wt%, less than about 0.5 wt%, less than about 1 wt%, less than about 5 wt%, less than about 10 wt%, or less than about 20 wt%. In some embodiments, carbon impurities may be about ppm to about 20 wt%, about 0.001 wt% to about 10 wt%, or about 0.01 wt% to about 5 wt%. Impurities of oxygen, nitrogen, or sulfur may be at ppb or ppm levels, individually or in combination, and may be greater than about 100 ppb, greater than about 1 ppm, greater than about 0.001 wt%, greater than about 0.01 wt%, greater than about 0.1 wt%, greater than about 0.5 wt%, greater than about 1 wt%, or greater than about 5 wt%. In some embodiments, it is from about 0.001 wt% to about 10 wt%, from about 0.01 wt% to about 5 wt%, or from about 0.1 wt% to about 5 wt%. The disclosed chemical precursor is the general formula PX n (SiR3) 3-n It has a structure according to In the formula, P is phosphorus, Si is silicon bonded to phosphorus by a Si-P bond, n is an integer having a value of 0, 1, or 2, X is a substituent bonded to phosphorus selected from the group consisting of a hydrocarbyl group, a halogen, hydrogen, an amino group, an alkoxy group, an alkyl group, and an aryl group, and R is a substituent bonded to Si selected from the group consisting of a hydrogen, a halogen, a hydrocarbyl group, an alkoxy group, a silyl group, an alkyl group, and an aryl group. Each R and X is selected independently and may be formed according to the synthesis method described herein. Silicon-containing compositions, such as film-forming compositions comprising inorganic silyls and polysilyls having phosphorus, methods of synthesizing these, and methods of using these to deposit silicon-containing films using vapor deposition processes such as thermal ALD, cyclic or continuous CVD, PEALD, REALD (radical-enhanced ALD), or PECVD, or fluid processes such as fluid CVD, or a combination thereof are disclosed. FIG. 8 generally illustrates a method or process such as a synthesis method for forming the composition described herein. In some embodiments, a process for preparing a composition such as a Si precursor includes the step of reacting a silicon nucleophile and a phosphorus electrophile to form the composition described herein. This method has the advantage of being simpler, more scalable in large quantities, and safer, as it does not require the use of raw materials that are highly flammable and difficult to manufacture. The raw materials are also readily available. The amount produced may be greater than 10 g, greater than 100 g, greater than 1 kg, or greater than 10 kg. In some embodiments, a synthesis method for forming the composition described herein comprises the steps of combining an alkali metal, such as metal Li, with a Si compound to form a first intermediate product, and then adding a phosphorus compound to the reaction product formed by the reaction of the alkali metal and the Si compound to form the first intermediate product. In some embodiments, the first intermediate product is prepared by a single vessel or batch process. In some embodiments, the silicon compound is an aromatic halosilane, such as chloro(phenyl)silane. In some embodiments, the phosphorus compound is a phosphorus halide, such as PCl3, PBr3, or PI3. In some embodiments, the first product, i.e., the intermediate molecular compound, is an aromatic compound containing a phenylsilyl group bonded to phosphorus, such as 1,3-diphenyl-2-(phenylsilyl)disilaphosphane. In some embodiments, a synthesis method for forming the composition described herein comprises the steps of reacting a first intermediate product with an acid such as triflic acid (trifluoromethanesulfonic acid; TfOH) to form a second chemical precursor product, and then adding an alkali metal hydride compound to the reaction product formed by the reaction of the first intermediate product with the acid to form a second chemical precursor product. In some embodiments, the alkali metal hydride is MH xIt has the general formula, wherein M is an alkali or alkaline earth metal and x is 1 or 2. In some embodiments, the alkali metal hydride is potassium hydride (KH). In some embodiments, the alkali metal hydride is selected from the group consisting of Et3BHLi, LiAlH4, LiBH4, NaBH4, and Cp2Zr(H)Cl). In some embodiments, the second chemical precursor product is prepared by a single vessel or batch process. In some embodiments, the second chemical precursor product comprises the composition described herein, e.g., the silicon precursor described herein. In some embodiments, a synthesis method for forming the composition described herein comprises the steps of reacting a first intermediate product with an acid such as triflic acid (trifluoromethanesulfonic acid; TfOH) to form a second chemical precursor product, and then adding an alkali metal halide compound to the reaction product formed by the reaction of the first intermediate product with the acid to form the second chemical precursor product. In some embodiments, the alkali metal halide has the general formula MX, wherein M is an alkali or alkaline earth metal such as Li, Na, K, Rb, Cs, Mg, Ca, or NR4, R is hydrogen, a halogen, a hydrocarbyl group, an alkoxy group, a silyl group, an alkyl group, and an aryl group, and X is a halogen such as Cl, Br, or I. In some embodiments, the second chemical precursor product is prepared by a single vessel or batch process. In some embodiments, the second chemical precursor product comprises the composition described herein, e.g., the silicon precursor described herein. In some embodiments, the first intermediate product and the second chemical precursor product are carried out, for example, in the same reaction chamber used to synthesize the composition described herein. In some embodiments, the first intermediate product and the second chemical precursor product are carried out within the same reaction chamber, but are carried out in two different steps or batches, for example, a step of forming the first intermediate product and a step of forming the second chemical precursor product. In some embodiments, the reaction mixture is continuously stirred, for example, while forming the first intermediate product, while forming the second chemical precursor product, or during both steps. In some embodiments, the temperature of the reaction mixture is controlled, for example, by cooling or heating, and the reaction mixture is maintained at about -80°C to about 90°C. In some embodiments, the formed chemical precursor has the following general formula, and In the formula, X is selected from the group consisting of Cl, Br, I and H, and alkyl groups. In some embodiments, the composition described herein has a chemical formula PX n (SiR 3 ) 3-n A synthesis method comprising the step of forming a first intermediate product and a second chemical precursor product is illustrated in FIG. 9. In some embodiments, a synthesis method for a first intermediate product or a second chemical precursor product or both comprises, for example, the step of using a solvent in a reaction chamber where the synthesis method is performed. In some embodiments, the solvent comprises pentane, hexane, cyclohexane, benzene, toluene, xylene, diethyl ether, methyl tert-butyl ether, tetrahydrofuran, 1,4-dioxane, acetonitrile, chloroform, dichloromethane, carbon tetrachloride, triethylamine, pyridine, ethyl acetate, 1,2-dimethoxyethane, dimethyl sulfoxide, 1,2-dichloroethane, chlorobenzene, acetone, 2-butanone, or species thereof. In some embodiments, the solvent impurities comprise molecules containing oxygen, nitrogen, or sulfur, or a mixture thereof. In some embodiments, the solvent impurities are impurities derived from the solvent used in the synthesis method used to form the composition. The present invention further discloses a vapor transfer vessel comprising a film-forming composition for depositing an amorphous silicon and non-metal-containing layer by PEALD, wherein the composition comprises a chemical precursor having a structure according to the following general formula, PX n (SiR3) 3-n In the formula, P is phosphorus; Si is silicon bonded to phosphorus by Si-P bonds; n is an integer with a value of 0, 1, or 2; X is a substituent bonded to phosphorus, selected from the group consisting of hydrocarbon groups, halogens, hydrogen, amino groups, alkoxy groups, alkyl groups, and aryl groups; R is a substituent bonded to Si, selected from the group consisting of hydrogen, halogen, hydrocarbon group, alkoxy group, silyl group, alkyl group, and aryl group; Each X and R is selected independently; The composition has a purity of less than 99.9% (w / w%); The composition contains at least one impurity selected from a list consisting of oxygen-containing, carbon-containing, nitrogen-containing, sulfur-containing, and metal-containing impurities in an amount exceeding 1 ppm (w / w%). In some embodiments, the vessel includes an outer wall surrounding a cavity for storing a film-forming composition. In some embodiments, the vessel includes a gas outlet to allow vapor of the film-forming composition to be discharged from the cavity. In some embodiments, the vessel further includes a gas inlet and a conduit extending to a fixed point within the cavity. In some embodiments, the conduit extends into the cavity and into the film-forming composition to allow a carrier gas to pass through the film-forming composition. In some embodiments, the conduit extends into the cavity to a point above the film-forming composition to allow the carrier gas to pass over the surface of the film-forming composition. In some embodiments, the vessel further includes a probe member. In some embodiments, the probe member includes one or more temperature sensors and / or one or more level sensors and one or more pressure sensors. In some embodiments, the outer wall and the cavity are formed of stainless steel. In some embodiments, the vessel is suitable for attachment to a vapor deposition reactor. The present invention further describes a container comprising a chemical precursor having a structure according to the following general formula, and PX n (SiR3) 3-n In the formula, P is phosphorus, Si is silicon bonded to phosphorus by a Si-P bond, n is an integer having a value of 0, 1, or 2, X is a substituent bonded to phosphorus selected from the group consisting of a hydrocarbyl group, a halogen, hydrogen, an amino group, an alkoxy group, an alkyl group, and an aryl group, and R is a substituent bonded to Si selected from the group consisting of a hydrogen, a halogen, a hydrocarbyl group, an alkoxy group, a silyl group, an alkyl group, and an aryl group. Each R and X is selected independently. In one embodiment, the present disclosure relates to a composition comprising trisilylphosphine and impurities, wherein the composition has a purity of less than 99.99 (w / w%) of trisilylphosphine and the composition comprises at least one impurity selected from a list consisting of oxygen-containing, carbon-containing, nitrogen-containing, sulfur-containing, metal-containing impurities and halogen-containing impurities in an amount exceeding 1 ppb (w / w%). In some embodiments, the composition further comprises about 0.01 wt-% to about 10 wt-% of a solvent as an impurity, and the solvent is selected from at least one of the group consisting of pentane, hexane, cyclohexane, benzene, toluene, xylene, diethyl ether, methyl tert-butyl ether, tetrahydrofuran, 1,4-dioxane, acetonitrile, chloroform, dichloromethane, carbon tetrachloride, triethylamine, pyridine, ethyl acetate, 1,2-dimethoxyethane, dimethyl sulfoxide, 1,2-dichloroethane, chlorobenzene, acetone, 2-butanone and species thereof. In some embodiments, the composition comprises about 0.01 wt-% to about 10 wt-% of species impurities, and the species impurities are P(SiMe3)3, SiH3Cl, SiH2Cl2, SiHCl3, SiCl4, SiHMe3, SiClMe3, P(SiH3)(SiMe3) 2, It is selected from the group consisting of P(SiH3)2(SiMe3), PCl(SiH3)2, PCl2(SiH3), PCl(SiMe3)2, PCl2(SiMe3), PCl3, PH(SiH3)2, PH2(SiH3), PH(SiMe3)2 and PH2(SiMe3). In some embodiments, the composition is P(SiMe3)3, SiH3Cl, SiH2Cl2, SiHCl3, SiCl4, SiHMe3, SiClMe3, P(SiH3)(SiMe3) 2,It does not contain any impurities selected from the group consisting of P(SiH3)2(SiMe3), PCl(SiH3)2, PCl2(SiH3), PCl(SiMe3)2, PCl2(SiMe3), PCl3, PH(SiH3)2, PH2(SiH3), PH(SiMe3)2, and PH2(SiMe3). In some embodiments, the composition does not contain group IV halides. In some embodiments, the group IV element in the group IV halide is selected from a list consisting of tin, germanium, and silicon. Halogens are undesirable in the composition due to known environmental aspects. In some embodiments, the composition does not contain phosphorus-hydrogen bonds. Compositions containing phosphorus-hydrogen bonds are difficult to handle, toxic, and harmful. Additionally, compositions containing phosphorus-hydrogen bonds increase the phosphorus content within the membrane, which is undesirable in some embodiments. In some embodiments, the composition does not contain silyl chloride. Compositions containing silyl chloride, such as TMS chloride, are known to passivate surfaces and are therefore undesirable to include in the composition in some embodiments. In some embodiments, the composition comprises about 0.01 wt-% to about 10 wt-% of species impurities, and the species impurities are P(OSiMe3) x (SiMe3) y , P(OSiMe3) x (SiH3) y , P(OSiH3) x (SiH3) y , and P(OSiH3) x (SiMe3) y Selected from the group consisting of, where x = 1 to 3 and x + y = 3. In some embodiments, the composition comprises about 0.01 wt-% to about 10 wt-% of seed impurities, and the seed impurities are PH x (OSiMe3) y (SiMe3)z , PH x (OSiMe3) y (SiH3) z , PH x (OSiH3) y (SiH3) z , and PH x (OSiH3) y (SiMe3) z Selected from the group consisting of, where x = 1 or 2, y = 1 or 2, z = 0 or 1, and x + y + z = 3. In some embodiments, the composition comprises about 0.01 wt-% to about 10 wt-% of species impurities, and the species impurities are P(Hal) x (OSiMe3) y (SiMe3) z , P(Hal) x (OSiMe3) y (SiH3) z , P(Hal) x (OSiH3) y (SiH3) z , and P(Hal) x (OSiH3) y (SiMe3) z Selected from the group consisting of, where x = 1 or 2, y = 1 or 2, z = 0 or 1, x + y + z = 3, and "Hal" is a halogen substituent selected from F, Cl, Br, and I. In an additional embodiment, the silicon-containing layer is deposited using a thermal atomic layer deposition process. That is, the process does not involve plasma pulses. In the process, a chemical precursor according to the following general formula is PX n (SiR3) 3-n A second precursor is provided in a vapor phase within a reaction chamber containing a substrate, and a second precursor is provided in a vapor phase within the reaction chamber. In the general formula, P is phosphorus, Si is silicon bonded to phosphorus by a Si-P bond, n is an integer having a value of 0, 1, or 2, X is a substituent bonded to phosphorus selected from the group consisting of a hydrocarbyl group, a halogen, hydrogen, an amino group, an alkoxy group, an alkyl group, and an aryl group, and R is a substituent bonded to Si selected from the group consisting of a hydrogen, a halogen, a hydrocarbyl group, an alkoxy group, a silyl group, an alkyl group, and an aryl group. Each R and X is selected independently. In some embodiments, a chemical precursor is chemically adsorbed onto the surface of a substrate. Then, a second precursor reacts with the chemically adsorbed chemical precursor. In some embodiments, the second precursor is NH3; N(HxRy)3 (wherein R is methyl, ethyl, or isopropyl, x is 0, 1, or 2, and y is 1, 2, or 3); N2H4; H2O; MX (wherein M is any metal and X is a halide); Si(HyXz) (wherein X is a halide, y is 4-z, and z is 1, 2, 3, or 4); It is selected from a list consisting of CxHyIz (wherein x=1, y is 1, 2, 3 or 4 and z is 4-y, or where x=2, y is 1, 2, 3, 4, 5 or 6 and z is 6-y, or where x=3, y is 1, 2, 3, 4, 5, 6, 7 or 8 and z is 8-y). In some embodiments, the second precursor is selected from a list consisting of CIH3, CI2H2, CI3H, and CI4. In some embodiments, the process is performed at a temperature of 100 to 600°C, for example, 300 to 450°C. In some embodiments, a process for depositing a silicon-containing layer is provided, and the process is a plasma-enhanced chemical vapor deposition (PECVD) process. That is, the first precursor pulse and the plasma pulse are executed non-sequentially, i.e., the pulses overlap, and there is no fuzzying between pulse injections. In some embodiments, both the precursor flow and the plasma power are supplied continuously for a long time. That is, the process is not a pulse process. In these embodiments, the plasma pulse comprises the steps of supplying the reactant gas into the reaction chamber and simultaneously turning on the plasma power. Depending on the desired layer, the reactant may be an oxygen-containing, nitrogen-containing, or noble gas-containing reactant. If the reactant is an oxygen-containing reactant, the deposited film is oxidized and the resulting film is silicon oxide. If the reactant is a nitrogen-containing reactant, the deposited film is nitrided and the resulting film is silicon nitride. If the reactant is a noble gas or a mixture of a noble gas and hydrogen, the deposited film may be amorphous silicon or phosphorus-doped amorphous silicon. In some embodiments, the reactant may also contain carbon. In these embodiments, the resulting film may be silicon carbide or silicon carbonitride. In some embodiments, a process for depositing a silicon-containing layer is provided, and the process is a thermochemical vapor deposition process. In the process, a chemical precursor is provided in a vapor phase within a reaction chamber containing a substrate. In the process, a chemical precursor according to the following general formula: PX n (SiR3) 3-n In the formula, P is phosphorus, Si is silicon bonded to phosphorus by a Si-P bond, n is an integer having a value of 0, 1, or 2, X is a substituent bonded to phosphorus selected from the group consisting of a hydrocarbyl group, a halogen, hydrogen, an amino group, an alkoxy group, an alkyl group, and an aryl group, and R is a substituent bonded to Si selected from the group consisting of a hydrogen, a halogen, a hydrocarbyl group, an alkoxy group, a silyl group, an alkyl group, and an aryl group. Each R and X is selected independently. The temperature during the deposition process is greater than 400°C. In some embodiments, the temperature during the deposition process is 400 to 500°C. In some embodiments, the temperature during the deposition process is 400 to 600°C. In some embodiments, a reactive gas is provided in the reaction chamber in the second step. If the desired deposition layer contains silicon and nitrogen, the reactive gas may contain NH3 or H2H4. If the desired deposition layer contains silicon and oxygen, the reactive gas may contain O2, O3, or H2O. In some embodiments, the layer deposited by any one of the aforementioned processes may be used for gap filling. This means that a substrate with a gap is provided within a reaction chamber. A chemical precursor is deposited on the substrate. A plasma pulse makes the chemical precursor fluid, that is, similar to a polymer, so that it fills the gap in the substrate. The fluidity of the precursor enables seamless gap filling. In some embodiments, the layer deposited by any one of the aforementioned processes may be used as a spacer layer in a semiconductor structure. In some embodiments, the layer deposited by any one of the aforementioned processes may be used as a protective liner, an etch stop layer, or a spacer in multi-patterning. The present invention additionally describes a semiconductor processing apparatus. The apparatus includes a reaction chamber. The reaction chamber includes a substrate support for supporting a substrate. The system further includes a heater. The heater is configured and positioned to heat the substrate within the reaction chamber. The system further includes a plasma module. The plasma module includes a radio frequency power source configured and positioned to generate plasma. In some embodiments, the plasma module is positioned in a remote plasma configuration where plasma can be generated outside the reaction chamber and guided to an active paper substrate generated by the plasma. In some embodiments, the plasma module is positioned in an indirect plasma configuration where plasma can be generated within a plasma generation space contained in the reaction chamber, the plasma generation space is separated from a substrate containing space contained in the reaction chamber by a conductive mesh plate or a perforated plate, and the substrate containing space contains a substrate. In some embodiments, the plasma module is positioned in a direct plasma configuration where plasma is generated within the reaction chamber and the plasma is not physically separated from the substrate. The system further includes an appropriate amount of additional sources. For example, the system may include a plasma gas source fluidly connected to a plasma module, and a first precursor source fluidly connected to a reaction chamber through one or more precursor valves. Optionally, instead of including the first precursor source, the system may include a silicon precursor source fluidly connected to a reaction chamber through one or more precursor valves and a phosphorus precursor source fluidly connected to a reaction chamber through one or more precursor valves. The system further includes a controller. The controller is configured to cause a semiconductor processing device to perform a method as described herein. Optionally, the system is configured to provide a first precursor, or a silicon precursor and a phosphorus precursor, to a reaction chamber using a carrier gas. Suitable carrier gases include rare gases. That is, in some embodiments, the semiconductor processing system includes a gas injection system comprising a precursor delivery system that uses a carrier gas to transport precursors to one or more reaction chambers. FIG. 1 is a schematic diagram of one embodiment (100) of a system as described herein. The system (100) includes a reaction chamber (110) in which plasma (120) is generated. In particular, the plasma (120) is generated between a showerhead injector (130) and a substrate support (140). This is a direct plasma configuration using capacitively coupled plasma. In the illustrated configuration, the system (100) includes two alternating current (AC) power sources, namely a high-frequency power source (121) and a low-frequency power source (122). In the illustrated configuration, the high-frequency power source (121) supplies radio frequency (RF) power to the showerhead injector, and the low-frequency power source (122) supplies an alternating current signal to the substrate support (140). The radio frequency power may be provided at a frequency of, for example, 13.56 MHz or higher, for example, at least 100 kHz to a maximum of 50 MHz, or at least 50 MHz to a maximum of 100 MHz, or at least 100 MHz to a maximum of 200 MHz, or at least 200 MHz to a maximum of 500 MHz, or at least 500 MHz to a maximum of 1000 MHz, or at least 1000 MHz to a maximum of 2000 MHz. A low-frequency alternating current signal can be provided at a frequency of, for example, 2 MHz or less, for example, at least 100 kHz to a maximum of 200 kHz, or at least 200 kHz to a maximum of 500 kHz, or at least 500 kHz to a maximum of 1000 kHz, or at least 1000 kHz to a maximum of 2000 kHz. A process gas containing a precursor, a reactant, or both is supplied to a conical gas distributor (150) through a gas line (160). The process gas is then introduced into a reaction chamber (110) through a hole (131) in a showerhead injector (130). The high-frequency power source (121) is illustrated as being electrically connected to the showerhead injector and the low-frequency power source (122) is illustrated as being electrically connected to the substrate support (140), but other configurations are also possible. For example, in some embodiments (not shown), both the high-frequency power source and the low-frequency power source may be electrically connected to the showerhead injector; both the high-frequency power source and the low-frequency power source may be electrically connected to the substrate support; or the high-frequency power source may be electrically connected to the substrate support and the low-frequency power source may be electrically connected to the showerhead injector. FIG. 2 is a schematic diagram of another embodiment (200) of the system as described herein. The configuration of FIG. 2 may be described as an indirect plasma system. The system (200) includes a reaction chamber (210) separated from a plasma generation space (225) where plasma (220) is generated. In particular, the reaction chamber (210) is separated from the plasma generation space (225) by a showerhead injector, and the plasma (220) is generated between the showerhead injector (230) and the ceiling (226) of the plasma generation space. In the illustrated configuration, the system (200) includes three alternating current (AC) power sources, namely a high-frequency power source (221) and two low-frequency power sources (222, 223), namely a first low-frequency power source (222) and a second low-frequency power source (223). In the illustrated configuration, the high-frequency power source (221) supplies radio frequency (RF) power to the ceiling of the plasma generating space, the first low-frequency power source (222) supplies an alternating current signal to the showerhead injector (230), and the second low-frequency power source (223) supplies an alternating current signal to the substrate support (240). The substrate (241) is provided on the substrate support (240). The radio frequency power may be provided at a frequency of, for example, 13.56 MHz or higher. The low-frequency alternating current signals of the first and second low-frequency power sources (222, 223) may be provided at a frequency of, for example, 2 MHz or lower. A process gas containing precursors, reactants, or both is supplied to the plasma generation space (225) through a gas line (260) passing through the ceiling (226) of the plasma generation space. Active species, such as ions and radicals generated by the plasma (225) from the process gas are supplied to the reaction chamber (210) through a hole (231) in the showerhead injector (230). FIG. 3 is a schematic diagram of another embodiment (300) of the system as described herein. The configuration of FIG. 3 may be described as a remote plasma system. The system (300) includes a reaction chamber (310) operably connected to a remote plasma source (325) where plasma (320) is generated. Any type of plasma source may be used as the remote plasma source (325), such as inductively coupled plasma, capacitively coupled plasma, or microwave plasma. In particular, the active species is supplied from the plasma source (325) to the reaction chamber (310) through the active species duct (360), to the conical distributor (350), and to the reaction chamber (310) through the hole (331) in the shower plate injector (330). Thus, the active species can be supplied to the reaction chamber in a uniform manner. In the illustrated configuration, the system (300) includes three alternating current (AC) power sources, namely a high-frequency power source (321) and two low-frequency power sources (822, 823), namely a first low-frequency power source (322) and a second low-frequency power source (323). In the illustrated configuration, the high-frequency power source (321) supplies radio frequency (RF) power to the ceiling of the plasma generating space, the first low-frequency power source (322) supplies an alternating current signal to the showerhead injector (330), and the second low-frequency power source (323) supplies an alternating current signal to the substrate support (340). The substrate (341) is provided on the substrate support (340). The radio frequency power may be provided at a frequency of, for example, 13.56 MHz or higher. The low-frequency alternating current signals of the first and second low-frequency power sources (322, 323) may be provided at a frequency of, for example, 2 MHz or lower. In some embodiments (not shown), an additional high-frequency power source may be electrically connected to the substrate support. Thus, direct plasma can be generated in the reaction chamber. A process gas containing precursors, reactants, or both is supplied to a plasma source (325) via a gas line (360). Active species, such as ions and radicals generated by the plasma (325) from the process gas, are directed into a reaction chamber (310). The method provided herein may be performed in any suitable apparatus, including an embodiment of a semiconductor processing system as illustrated in FIG. 4. FIG. 4 is a schematic diagram of a plasma-enhanced atomic layer deposition (PEALD) apparatus available in some embodiments of the present invention. In this figure, a pair of electrically conductive flat electrodes (402, 404) facing each other and parallel are provided in the interior (411) (reaction zone) of a reaction chamber (403), and RF power (e.g., 13.56 MHz and / or 27 MHz) is applied from a power source (425) to one side and the other side (412) is electrically grounded so that plasma can be generated between the electrodes. Of course, the semiconductor processing apparatus does not need to generate plasma during the step of providing a precursor to the reaction chamber, or during the purging between subsequent processing steps, and RF power does not need to be applied to either of the electrodes during such step or during the purging. A temperature controller may be provided on the lower stage (402), i.e., the lower electrode. A substrate (401) is placed on top of it, and its temperature is maintained constant at a given temperature. The upper electrode (404) can also function as a shower plate, and various gases such as plasma gas, reactant gas and / or diluent gas (if present), as well as precursor gas, can be introduced into the reaction chamber (403) through gas line 421 and gas line 422, respectively, and through the shower plate (404). Additionally, the reaction chamber (403) is provided with a circular duct (413) having an exhaust line (417), through which gas inside (411) of the reaction chamber (403) is discharged. Additionally, the transfer chamber (405) is positioned below the reaction chamber (403) and is equipped with a sealing gas line (424) for introducing sealing gas into the interior (411) of the reaction chamber (403) through the interior (transfer zone) (416) of the transfer chamber (405), and a separator plate (414) is provided to separate the reaction zone and the transfer zone. Note that the gate valve through which the wafer can be transferred into or from the transfer chamber (405) is omitted in this drawing. The transfer chamber is also equipped with an exhaust line (406). FIG. 5 illustrates a schematic representation of one embodiment of the method as described herein. The method comprises the step (511) of placing a substrate on a substrate support. Then, the method comprises the step of sequentially executing a plurality of deposition cycles (519). The deposition cycles (519) include a first precursor pulse (512) and a plasma pulse (516). The first precursor pulse (512) comprises the step of exposing the substrate to the first precursor (512). The plasma pulse (516) comprises the step of exposing the substrate to an active species generated by the plasma. The active species may be generated using a remote, direct, or indirect plasma configuration as described elsewhere in the present invention. It should be understood that the first precursor pulse (512) and the plasma pulse (516) do not overlap, or do not substantially overlap. That is, the first precursor pulse (512) and the plasma pulse (516) are performed sequentially. In some embodiments, the first precursor pulse (512) and the plasma pulse (516) overlap at least partially. In some embodiments, the precursor pulse (512) and the plasma pulse (516) are separated by a purge (515, 517). That is, in some embodiments, a precursor post-purge (515) is performed following the first precursor pulse (512), and a plasma post-purge (517) is performed following the plasma pulse (516). The purge may be performed, for example, by exposing the substrate to a rare gas. Exemplary rare gases include He, Ne, Ar, Xe, and Kr. Thus, a silicon-containing material is formed on the substrate. When a desired amount of silicon-containing material is formed on the substrate, the method ends (518). FIG. 6 illustrates a schematic representation of one embodiment of the method as described herein. The method comprises the step (611) of placing a substrate on a substrate support. Subsequently, the method comprises the step of performing a plurality of deposition cycles (619) sequentially. The deposition cycles (619) include a silicon precursor pulse (612), a phosphorus precursor pulse (614), and a plasma pulse (616). It should be understood that each pulse may be performed in any order. That is, the cycle (619) may begin with the silicon precursor pulse (612), the phosphorus precursor pulse (614) may be performed, and finally the plasma pulse (616) may be performed. Or the cycle (619) may begin with the phosphorus pulse (614), the silicon precursor pulse (612) may be performed, and finally the plasma pulse (616) may be performed. The cycle may also include a plasma pulse after each precursor pulse. Subsequently, the cycle (61) may begin with a silicon precursor pulse (612), perform a plasma pulse (616), perform a phosphorus precursor pulse (614), and finally perform a second plasma pulse (616). Alternatively, the cycle (619) may begin with a phosphorus pulse (614), perform a plasma pulse (616), perform a silicon precursor pulse (612), and finally perform a second plasma pulse (616). The silicon precursor pulse (612) includes the step (612) of exposing the substrate to the silicon precursor. The phosphorus precursor pulse (614) includes the step (614) of exposing the substrate to the phosphorus precursor. The plasma pulse (616) includes the step of exposing the substrate to an active species generated by the plasma. The active species may be generated using a remote, direct, or indirect plasma configuration as described elsewhere in this invention. It should be understood that the silicon precursor pulse (612), the phosphorus precursor pulse (614), and the plasma pulse (616) do not overlap, or do not substantially overlap. That is, the silicon precursor pulse (612), the phosphorus precursor pulse (614), and the plasma pulse (616) are performed sequentially. In some embodiments, the precursor pulses (612, 614) and the plasma pulse (616) are separated by a purge (613, 615, 617). That is, in some embodiments, a precursor post-purge (613) is performed following a silicon precursor pulse (612), a precursor post-purge (615) is performed following a phosphorus precursor pulse (614), and a plasma post-purge (617) is performed following a plasma pulse (616). Purge can be performed, for example, by exposing the substrate to a rare gas. Exemplary rare gases include He, Ne, Ar, Xe, and Kr. In some embodiments, the silicon precursor pulse (612), the phosphorus precursor pulse (614), and the plasma pulse (616) overlap at least partially. Thus, a silicon-containing material is formed on the substrate. When a desired amount of silicon-containing material is formed on the substrate, the method is terminated (618). FIG. 7 is a schematic diagram of a substrate (700) including a gap (7710). The gap (710) includes a sidewall (711) and a distal end (712). The substrate further includes a proximal surface (720), i.e., a substrate surface outside the gap. In some embodiments, the sidewall (711) and the distal end (712) comprise the same material. In some embodiments, at least one of the sidewall (711) and the distal end (712) comprises a dielectric, such as silicon oxide, silicon nitride, silicon carbide, and mixtures thereof, a silicon-containing dielectric. In some embodiments, the dielectric comprises hydrogen. In some embodiments, at least one of the sidewall (711) and the distal end (712) comprises a metal such as a transition metal, a post-transition metal, and a rare earth metal. In some embodiments, the metal comprises Cu, Co, W, Ru, Mo, Al, or an alloy thereof.

[0218] In some embodiments, the sidewall (711) and the distal end (712) have the same or substantially the same composition. In some embodiments, the sidewall (711) and the distal end (712) have different compositions. In some embodiments, the sidewall and the distal end (712) comprise a dielectric. In some embodiments, the sidewall (711) and the distal end (712) comprise a metal. In some embodiments, the sidewall (711) comprises a metal and the distal end (712) comprises a dielectric. In some embodiments, the sidewall (711) comprises a dielectric and the distal end comprises a metal. In some embodiments, the proximal surface (720) has the same composition as the sidewall (711). In some embodiments, the proximal surface (720) has a different composition from the sidewall (711). In some embodiments, the proximal surface (720) has a different composition from the distal end (712). In some embodiments, the proximal surface (720) has the same composition as the distal end (712). In some embodiments, the proximal surface (720), the sidewall (711), and the distal end (712) comprise the same material. In some embodiments, the proximal surface (720), the sidewall (711), and the distal end (712) comprise a dielectric. In some embodiments, the proximal surface (720), the sidewall (711), and the distal end (712) comprise a metal. In some embodiments, the proximal surface (720), the sidewall (711), and the distal end (712) comprise a semiconductor. In some embodiments, a layer formed according to one embodiment of the present disclosure has a step coverage of at least 90% to a maximum of about 110%, or at least 95% to a maximum of about 105%, or at least 99% to a maximum of about 101%, or about 100%, in / on a structure such as a gap (710) having an aspect ratio (height / width) of about 2, about 5, about 10, about 5, about 100, or about 5 to 25. The term “step coverage” should be understood to mean the layer growth rate of the distal end (712) of the concave portion divided by the corresponding layer growth rate of the proximal surface (720) and expressed as a percentage. The illustrations presented herein are not intended to represent the actual appearance of any specific material, structure, or element, but are merely ideal representations used to explain embodiments of the present disclosure. The specific applications described and illustrated are examples of the invention and are not intended to otherwise limit the scope of the embodiments and applications in any way. In fact, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the system may not be described in detail. Additionally, the connecting lines shown in the various drawings are intended to indicate exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system and / or may not exist in some embodiments. It should be understood that the configurations and / or approaches described herein are by nature exemplary and, as various modifications are possible, these specific embodiments or examples should not be considered in a limiting sense. The specific routines or methods described herein may represent one or more of any processing strategies. Accordingly, the various operations described may be performed in the order described, in a different order, or omitted in some cases. The subject matter of the present disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems, and configurations, other features, functions, operations, and / or properties disclosed herein, as well as any and all equivalents.

Claims

Claim 1 A vapor transfer vessel comprising a film-forming composition for depositing an amorphous silicon and non-metal-containing layer by PEALD, wherein the composition comprises a chemical precursor having a structure according to the following general formula, and PX n (SiR3) 3-n A vapor transfer vessel, wherein P is phosphorus; Si is silicon bonded to phosphorus by a Si-P bond; n is an integer having a value of 0, 1, or 2; X is a substituent bonded to phosphorus selected from the group consisting of hydrocarbon groups, halogens, hydrogen, amino groups, alkoxy groups, alkyl groups, and aryl groups; R is a substituent bonded to Si selected from the group consisting of hydrogen, halogens, hydrocarbon groups, alkoxy groups, silyl groups, alkyl groups, and aryl groups; each of X and R is selected independently; the composition has a purity of less than 99.9 (w / w%); and the composition contains at least one impurity selected from a list consisting of oxygen-containing, carbon-containing, nitrogen-containing, sulfur-containing, and metal-containing impurities in an amount exceeding 1 ppm (w / w%). Claim 2 In claim 1, the container is a vapor transfer container comprising an outer wall surrounding a cavity for storing the membrane-forming composition. Claim 3 In paragraph 2, the above-mentioned container is a steam transfer container comprising a gas outlet that allows the steam of the membrane-forming composition to be discharged from the cavity. Claim 4 A steam transfer vessel according to claim 2 or 3, further comprising a gas inlet and a conduit extending to a fixed point within the cavity. Claim 5 In paragraph 4, the above conduit is a vapor transfer vessel extending into the cavity and into the membrane-forming composition so that a carrier gas passes through the membrane-forming composition. Claim 6 In paragraph 4, the above conduit extends into the cavity to a point above the film-forming composition to pass a carrier gas over the surface of the film-forming composition. Claim 7 A steam transfer vessel comprising a probe member further comprising, in any one of claims 1 to 6. Claim 8 In claim 7, the probe member comprises one or more temperature sensors and / or one or more level sensors and one or more pressure sensors, a steam transfer vessel. Claim 9 A steam transfer vessel according to any one of paragraphs 2 through 8, wherein the outer wall and cavity are formed of stainless steel. Claim 10 In any one of claims 1 to 9, the vessel is a vapor transfer vessel suitable for attachment to a vapor deposition reactor. Claim 11 A composition configured to deposit an amorphous silicon and non-metal-containing layer by PEALD, wherein the composition comprises a chemical precursor having a structure according to the following general formula, and PX n (SiR3) 3-n A formula wherein P is phosphorus; Si is silicon bonded to phosphorus by a Si-P bond; n is an integer having a value of 0, 1, or 2; X is a substituent bonded to phosphorus selected from the group consisting of hydrocarbon groups, halogens, hydrogen, amino groups, alkoxy groups, alkyl groups, and aryl groups; R is a substituent bonded to Si selected from the group consisting of hydrogen, halogens, hydrocarbon groups, alkoxy groups, silyl groups, alkyl groups, and aryl groups; each of X and R is selected independently; the composition has a purity of less than 99.9 (w / w%); and the composition contains at least one impurity selected from a list consisting of oxygen-containing, carbon-containing, nitrogen-containing, sulfur-containing, and metal-containing impurities in an amount exceeding 1 ppm (w / w%). Claim 12 A composition comprising trisilylphosphine and impurities, wherein the purity of the trisilylphosphine is less than 99.99 (w / w%), and the composition comprises at least one impurity selected from a list consisting of oxygen-containing, carbon-containing, nitrogen-containing, sulfur-containing, metal-containing impurities, and halogen-containing impurities in an amount exceeding 1 ppb (w / w%). Claim 13 In claim 12, the composition further comprises about 0.01 wt-% to about 10 wt-% of a solvent as an impurity, wherein the solvent is selected from at least one of the group consisting of pentane, hexane, cyclohexane, benzene, toluene, xylene, diethyl ether, methyl tert-butyl ether, tetrahydrofuran, 1,4-dioxane, acetonitrile, chloroform, dichloromethane, carbon tetrachloride, triethylamine, pyridine, ethyl acetate, 1,2-dimethoxyethane, dimethyl sulfoxide, 1,2-dichloroethane, chlorobenzene, acetone, 2-butanone, and species thereof. Claim 14 In claim 12 or 13, the composition comprises about 0.01 wt-% to about 10 wt-% of species impurities, wherein the species impurities are P(SiMe3)3, SiH3Cl, SiH2Cl2, SiHCl3, SiCl4, SiHMe3, SiClMe3, P(SiH3)(SiMe3) 2, A composition selected from the group consisting of P(SiH3)2(SiMe3), PCl(SiH3)2, PCl2(SiH3), PCl(SiMe3)2, PCl2(SiMe3), PCl3, PH(SiH3)2, PH2(SiH3), PH(SiMe3)2, and PH2(SiMe3). Claim 15 In any one of claims 11 to 14, the composition is P(SiMe3)3, SiH3Cl, SiH2Cl2, SiHCl3, SiCl4, SiHMe3, SiClMe3, P(SiH3)(SiMe3) 2, A composition that does not contain any impurities selected from the group consisting of P(SiH3)2(SiMe3), PCl(SiH3)2, PCl2(SiH3), PCl(SiMe3)2, PCl2(SiMe3), PCl3, PH(SiH3)2, PH2(SiH3), PH(SiMe3)2, and PH2(SiMe3). Claim 16 A composition according to any one of claims 11 to 15, wherein the composition does not include a group IV halide. Claim 17 In claim 16, the composition wherein the group IV element in the group IV halide is selected from the list consisting of tin, germanium, and silicon. Claim 18 A composition according to any one of claims 11 to 17, wherein the composition does not include a phosphorus-hydrogen bond. Claim 19 A composition according to any one of claims 11 to 18, wherein the composition does not contain silyl chloride. Claim 20 In any one of claims 12 to 19, the composition comprises about 0.01 wt-% to about 10 wt-% of species impurities, and said species impurities are P(OSiMe3) x (SiMe3) y , P(OSiMe3) x (SiH3) y , P(OSiH3) x (SiH3) y , and P(OSiH3) x (SiMe3) y A composition selected from the group consisting of, wherein x = 1 to 3 and x + y = 3. Claim 21 In any one of claims 12 to 20, the composition comprises about 0.01 wt-% to about 10 wt-% of species impurities, and said species impurities have a pH x (OSiMe3) y (SiMe3) z , PH x (OSiMe3) y (SiH3) z , PH x (OSiH3) y (SiH3) z , and PH x (OSiH3) y (SiMe3) z A composition selected from the group consisting of, wherein x = 1 or 2, y = 1 or 2, z = 0 or 1, and x + y + z = 3. Claim 22 In any one of claims 12 to 21, the composition comprises about 0.01 wt-% to about 10 wt-% of species impurities, and said species impurities are P(Hal) x (OSiMe3) y (SiMe3) z , P(Hal) x (OSiMe3) y (SiH3) z , P(Hal) x (OSiH3) y (SiH3) z , and P(Hal) x (OSiH3) y (SiMe3) z A composition selected from the group consisting of, wherein x = 1 or 2, y = 1 or 2, z = 0 or 1, x + y + z = 3, and "Hal" is a halogen substituent selected from F, Cl, Br, and I. Claim 23 A composition according to any one of claims 12 to 22, wherein the composition comprises moisture exceeding about 100 ppb as an impurity. Claim 24 A composition according to claim 11, wherein the layer comprises silicon nitride, silicon carbide, silicon oxide, or a mixture thereof. Claim 25 A composition comprising a molecule having P and at least one Si connected to P and impurities, wherein the purity of the molecule is less than 99.999 (w / w%), the composition contains impurities of oxygen, carbon, nitrogen, sulfur, or metal in excess of 1 ppm (w / w%), and the molecule comprises only atoms selected from P, Si, and H, or halides selected from F, Cl, Br, and I. Claim 26 A composition comprising a molecule having P and at least one Si connected to P and impurities, wherein the purity of the molecule is less than 99.999 (w / w%), the composition contains impurities of oxygen, nitrogen, sulfur, or metal in excess of 1 ppm (w / w%), and the molecule comprises only atoms selected from P, Si, and H, or halides selected from F, Cl, Br, and I. Claim 27 A method for preparing a chemical precursor having a structure according to the following general formula, PX n (SiR3) 3-n In the formula, P is phosphorus; Si is silicon bonded to phosphorus by a Si-P bond; n is an integer having a value of 0, 1 or 2; X is a substituent bonded to phosphorus selected from the group consisting of hydrocarbon groups, halogens, hydrogen, amino groups, alkoxy groups, alkyl groups and aryl groups; R is a substituent bonded to Si selected from the group consisting of hydrogen, halogens, hydrocarbon groups, alkoxy groups, silyl groups, alkyl groups and aryl groups; wherein each X and R are independently selected, and the method comprises the steps of forming an intermediate product; and forming a chemical precursor, wherein the intermediate product comprises at least one aromatic group. Claim 28 A method according to claim 27, wherein the step of forming the intermediate product comprises: a) reacting a starting product comprising silicon bonded to a halogen atom and an aromatic group with an alkali metal atom, wherein the halogen atom is substituted with the alkali metal atom; and b) after the reaction of step a) is completed, reacting the molecule with a phosphorus halide, wherein the alkali metal is substituted with a phosphorus atom. Claim 29 A method according to claim 27 or 28, wherein the step of forming the chemical precursor comprises: c) reacting the intermediate molecule with TfOH, wherein the aromatic group is substituted with an OTf group; and d) reacting the molecule with an alkali metal hydride after the reaction of step c) is completed, wherein the OTf group is substituted with hydrogen, thereby forming the chemical precursor. Claim 30 A method according to claim 27 or 28, wherein the step of forming the chemical precursor comprises: c) reacting the intermediate molecule with TfOH, wherein the phenyl group is substituted with an OTf group; and d) reacting the molecule with MX after the reaction of step c) is completed, wherein the OTf group is substituted with X, wherein X is selected from the group consisting of Cl, Br, I, and alkyl groups, M is selected from the group consisting of Li, Na, K, Rb, Cs, Mg, Ca, and NR4, and R is selected from the group consisting of hydrogen, halogen, hydrocarbyl group, alkoxy group, silyl group, alkyl group, and aryl group, and the chemical precursor is formed. Claim 31 In any one of claims 27 to 30, the chemical precursor has the following general formula, and A method in which X is selected from the group consisting of Cl, Br, I and H and alkyl groups. Claim 32 A method according to any one of claims 27 to 31, wherein the chemical precursor comprises trisilylphosphine. Claim 33 A method according to any one of claims 27 to 32, wherein the intermediate molecule comprises 1,3-diphenyl-2-(phenylsilyl)disilaphosphane. Claim 34 A method according to any one of claims 27 to 33, wherein the starting product comprises chloro(phenyl)silane. Claim 35 A method according to any one of claims 27 to 34, wherein the step of forming the intermediate product is performed in a first reaction chamber. Claim 36 A method according to any one of claims 27 to 35, wherein the step of forming the chemical precursor is performed in a second reaction chamber. Claim 37 In paragraph 35, the method wherein the reaction chamber is cooled, heated, or maintained at room temperature during the step of forming the intermediate product. Claim 38 In paragraph 36, the method wherein the reaction chamber is cooled, heated, or maintained at room temperature during the step of forming the chemical precursor. Claim 39 A method according to claim 35 or 36, wherein the process step is performed under continuous mixing during the formation of the intermediate product and chemical precursor.

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