Trench overhang for SI-AP

Abstract

In one or more embodiments, the sub-pixel circuit comprises a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises an anode structure. The anode structure comprises an overhang defined by an extension of the upper portion of the sidewall of the anode structure that extends past the lower portion of the sidewall of the anode structure. Each of the first sub-pixel and the second sub-pixel also comprises an organic light-emitting diode (OLED) material on the uppermost surface of the anode structure, a cathode disposed over the OLED material disposed on the anode structure, and an encapsulation layer disposed over the cathode. The sub-pixel circuit further comprises a well disposed between the first sub-pixel and the second sub-pixel and defined by adjacent anode structures of the first sub-pixel and the second sub-pixel. The encapsulation layer separates the OLED material and the cathode disposed on the uppermost surface of the anode structure from the OLED material and the cathode disposed in the well.

Description

Technology Field

[0001] The embodiments described herein generally relate to displays. More specifically, the embodiments described herein relate to sub-pixel circuits that can be utilized in displays such as organic light-emitting diode (OLED) displays and methods for forming said sub-pixel circuits. Background Technology

[0002] Input devices, including display devices, can be used in various electronic systems. Organic light-emitting diodes (OLEDs) are light-emitting diodes (LEDs) in which an emitting electroluminescent layer is a film of organic compound that emits light in response to an electric current. OLED devices are classified as bottom-emitting devices if the emitted light passes through a transparent or translucent bottom electrode and a substrate on which the panel is manufactured. Top-emitting devices are classified based on whether the light emitted from the OLED device escapes through a cover added after the device's manufacturing. OLEDs are used today to create display devices in many electronic devices. Today's electronics manufacturers are seeking to provide higher resolution than just a few years ago while reducing the size of these display devices. Accordingly, there is a need in the relevant technology field for sub-pixel circuits and methods for forming such sub-pixel circuits to increase pixels per inch and provide improved OLED performance.

[0003] In one or more embodiments, the sub-pixel circuit comprises a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises an anode structure. The anode structure comprises an overhang defined by an extension of the upper portion of the sidewall of the anode structure that extends past the lower portion of the sidewall of the anode structure. Each of the first sub-pixel and the second sub-pixel also comprises an organic light-emitting diode (OLED) material on the uppermost surface of the anode structure, a cathode disposed on the OLED material disposed on the anode structure, and an encapsulation layer disposed on the cathode. The sub-pixel circuit further comprises a well disposed between the first sub-pixel and the second sub-pixel and defined by adjacent anode structures of the first sub-pixel and the second sub-pixel. The encapsulation layer separates the OLED material and the cathode disposed on the uppermost surface of the anode structure from the OLED material and the cathode disposed in the well.

[0004] In one or more embodiments, the sub-pixel circuit comprises a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises an anode structure. The anode structure comprises two or more layers having different compositions. The anode structure comprises an overhang defined by an extension of the upper portion of the sidewall of the anode structure extending past the lower portion of the sidewall of the anode structure. Each of the first sub-pixel and the second sub-pixel also comprises an organic light-emitting diode (OLED) material on the uppermost surface of the anode structure, a cathode disposed on the OLED material disposed on the anode structure, and an encapsulation layer disposed on the cathode. The sub-pixel circuit further comprises a well disposed between the first sub-pixel and the second sub-pixel and defined by adjacent anode structures of the first sub-pixel and the second sub-pixel. The encapsulation layer separates the OLED material and cathode placed on the uppermost surface of the anode structure from the OLED material and cathode placed in the well.

[0005] In one or more embodiments, a method for forming a sub-pixel circuit comprises the step of forming at least two anode structures. Each anode structure comprises an overhang defined by an extension of the upper portion of the sidewall of each anode structure extending past the lower portion of the sidewall of each anode structure. The method further comprises the step of depositing an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer corresponding to a first sub-pixel. The encapsulation layer separates the OLED material and cathode deposited on the uppermost surface of each anode structure from the OLED material and cathode disposed in a well defined by adjacent anode structures of the first sub-pixel and the second sub-pixel. Brief explanation of the drawing

[0006] In a manner that allows the features of the above-mentioned disclosure to be understood in detail, a more specific description of the disclosure briefly summarized above may be made with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings are merely illustrative of exemplary embodiments and should not be construed as limiting the scope of the disclosure, and that other equally valid embodiments may be permitted. FIG. 1a is a schematic cross-sectional view of a sub-pixel circuit on the x-axis according to the embodiments described herein. FIG. 1b is a schematic cross-sectional view of a sub-pixel circuit on the y-axis according to the embodiments described herein. FIG. 1c is a schematic plan view of a sub-pixel circuit according to the embodiments described herein. FIG. 2 is a flowchart of a method for forming a sub-pixel according to the embodiments described herein. FIGS. 3a to 3q are schematic cross-sectional views of a substrate on the x-axis during a method of forming a sub-pixel circuit according to the embodiments described herein. For ease of understanding, the same reference numbers have been used where possible to designate identical elements common to the drawings. The elements disclosed in one embodiment are considered to be useful for other embodiments without specific reference. Specific details for implementing the invention

[0007] The embodiments described herein generally relate to displays. More specifically, the embodiments described herein relate to sub-pixel circuits that can be utilized in displays such as organic light-emitting diode (OLED) displays and methods for forming said sub-pixel circuits. In various embodiments, the sub-pixels utilize advanced anode structures to improve the functionality of the display.

[0008] Each of the embodiments of the sub-pixel circuit described herein comprises a plurality of sub-pixels, and each of the sub-pixels has adjacent anode structures that are permanent with respect to the sub-pixel circuit. Although the drawings depict two or three sub-pixels for each sub-pixel, the sub-pixel circuit of the embodiments described herein comprises a plurality of sub-pixels, such as two or more sub-pixels. Each sub-pixel has OLED materials configured to emit white, red, green, blue, or other color light when energized. For example, the OLED materials of the first sub-pixel emit red light when energized, the OLED materials of the second sub-pixel emit green light when energized, and the OLED materials of the third sub-pixel emit blue light when energized.

[0009] Anode structures with overhangs are permanent for the sub-pixel circuits. The overhangs support the formation of sub-pixel circuits using evaporative deposition and support the separation of OLED materials and cathodes between each sub-pixel circuit. The break between the OLED materials and cathodes by the encapsulation layer allows current to flow individually to the sub-pixels. Evaporative deposition is utilized for the deposition of OLED materials (including the hole injection layer (HIL), hole transport layer (HTL), emissive layer (EML), and electron transport layer (ETL)) and cathodes. In some examples, the encapsulation layer may be placed via evaporative deposition. The evaporation angle set by the overhangs and the evaporation source defines the deposition angles; that is, the overhangs support a shadowing effect during evaporative deposition with respect to the evaporation angle set by the evaporation source. To deposit at a specific angle, the evaporation source is configured to emit the deposition material at a specific angle relative to the overhangs.

[0010] FIG. 1a is a schematic cross-sectional view of a sub-pixel circuit (100) on the x-axis (121) according to one or more embodiments. The cross-sectional view of FIG. 1a is taken along the cutting line (1A-1A) of FIG. 1c. FIG. 1b is a schematic cross-sectional view of a sub-pixel circuit (100) on the y-axis (122) according to one or more embodiments. The cross-sectional view of FIG. 1b is taken along the cutting line (1B-1B) of FIG. 1c is a schematic top view of a sub-pixel circuit (100). The sub-pixel circuit (100) includes a substrate (101). The substrate (101) may be a backplane. The backplane includes, but is not limited to, a complementary metal oxide semiconductor (CMOS) array, a thin film transistor (TFT) array, or a glass backplane.

[0011] A plurality of anode structures (102) are disposed on a substrate (101). A plurality of anode structures (102) disposed on the substrate (101) may be disposed on the substrate (101). Adjacent anode structures (102) define wells (103) between them. Each anode structure (102) has an overhang (123) defined by an extension of the upper portion (124A) of the sidewall (124) of the anode structure (102) extending past the lower portion (124B) of the sidewall (124) of the anode structure (102). The anode structures (102) comprise a metal-containing material. The metal-containing material comprises, but is not limited to, transparent conductive oxide (TCO), copper, titanium, aluminum, molybdenum, silver, chromium, or combinations thereof. TCO materials include, but are not limited to, indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium zinc oxide (IGZO), or combinations thereof.

[0012] The anode structures (102) may include two or more layers. The two or more layers include a second layer (105) disposed on a first layer (104). The second layer (105) includes an upper portion (124A) of the sidewall (124). The first layer (104) includes a lower portion (124B) of the sidewall (124). In some embodiments, the first layer (104) and the second layer (105) have different compositions.

[0013] The well (103) is defined by adjacent anode structures (102). The well (103) has a first width (125) between adjacent extensions of the overhangs (123) of the adjacent anode structures (102). The well (103) has a second width (126) between adjacent anode structures (102) where the upper portion (124A) and the lower portion (124B) meet. The difference between the second width (126) and the first width (125) is 50 nm or more. The height (128) is 200 nm or more.

[0014] The sub-pixel circuit (100) has a plurality of sub-pixel lines (e.g., a first sub-pixel line (106A), a second sub-pixel line (106B), and a third sub-pixel line (106C)). The sub-pixel lines are adjacent to each other along the x-axis (121). Each sub-pixel line includes at least two sub-pixels (107). For example, the first sub-pixel line (106A) includes a first sub-pixel (107A) and a second sub-pixel (107B), the second sub-pixel line (106B) includes a third sub-pixel (107C) and a fourth sub-pixel (107D), and the third sub-pixel line (106C) includes a fifth sub-pixel (107E) and a sixth sub-pixel (107F). The first sub-pixel (107A) and the second sub-pixel (107B) are aligned along the y-axis (122). The first sub-pixel (107A), the third sub-pixel (107C), and the fifth sub-pixel (107E) are aligned along the x-axis (121). Although FIG. 1a depicts the first sub-pixel line (107A), the second sub-pixel line (107B), and the third sub-pixel line (107C), the sub-pixel circuit (100) of the embodiments described herein may include additional sub-pixel lines, such as a fourth sub-pixel line.

[0015] Each sub-pixel line has OLED materials configured to emit white, red, green, blue, or other color light when energized. In some embodiments, the OLED materials of the first sub-pixel line (106A) emit red light when energized, the OLED materials of the second sub-pixel line (106B) emit green light when energized, the OLED materials of the third sub-pixel line (106C) emit blue light when energized, and the OLED materials of the fourth sub-pixel emit other color light when energized. The OLED materials within the sub-pixel line may be configured to emit the same color light when energized. In some embodiments, the OLED materials of the first sub-pixel (107A) and the second sub-pixel (107B) of the first sub-pixel line (106A) emit red light when energized, and the OLED materials of the third sub-pixel (107C) and the fourth sub-pixel (107D) of the second sub-pixel line (106B) emit green light when energized.

[0016] Adjacent sub-pixel lines are separated by an opening (108) of a well (103) extending along the y-axis (122) between the anode structures (102) of the adjacent sub-pixel lines. For example, FIG. 1a illustrates a sub-pixel circuit (100) comprising a first well (103A) and a second well (103B). The first well (103A) is defined by the anode structures (102) of the first sub-pixel (107A) and the second sub-pixel (107B) of the first sub-pixel line (106A), and the anode structures (102) of the third sub-pixel (107C) and the fourth sub-pixel (107D) of the second sub-pixel line (106B). The opening (108) of the first well (103A) divides the first sub-pixel line (106A) and the second sub-pixel line (106B). The second well (103B) is defined by the anode structures (102) of the third sub-pixel (107C) and the fourth sub-pixel (107D) of the second sub-pixel line (106B), and the anode structures (102) of the fifth sub-pixel (107E) and the sixth sub-pixel (107F) of the third sub-pixel line (106C). The opening (108) of the second well (103B) divides the second sub-pixel line (106B) and the third sub-pixel line (106C).

[0017] A passivation layer (112) is disposed on the uppermost surface (127) and upper portion (124A) of each anode structure (102). In some embodiments, the passivation layer (112) is disposed along the entire sidewall (124) of the anode structure (102). In some embodiments, the passivation layer (112) is disposed in the well (103).

[0018] An OLED material (113) and a cathode (114) are disposed on the anode structures (102). The OLED material (113) may include one or more of a hole injection layer (HIL), a hole transport layer (HTL), an emitting layer (EML), and an electron transport layer (ETL). The OLED material (113) is disposed on and in contact with the uppermost surface of the anode structure (102). The OLED material (113) used in each sub-pixel (107) may vary to change the light emitted when the sub-pixel (107) is energized. The OLED material (113) is disposed within at least a portion of the well (103) that is not shadowed by the overhangs (123) of the anode structures (102). Additionally, the OLED material (113) may be disposed on the sidewall (124) of the anode structure (102).

[0019] In some embodiments, the cathode (114) is disposed on the OLED material (113). The cathode (114) may also be disposed on the sidewall (124) of the anode structure (102). The cathode (114) may also be disposed within at least a portion of the well (103) that is not shadowed by the overhangs of the anode structures (102). The cathode (114) comprises a conductive material, such as a metal. In some embodiments, the cathode (114) comprises, but is not limited to, silver, magnesium, chromium, titanium, aluminum, ITO, or a combination thereof. In one or more embodiments, the material of the cathode (114) is different from the material of the anode structure (102). In some embodiments, an encapsulation layer (115) is disposed on the OLED material (113) and the cathode (114). An encapsulation layer (115) is disposed within the well (103). In some embodiments, the encapsulation layer (115) is in direct contact with a passivation layer (112) disposed on the sidewall (124) of the anode structure (102). In some embodiments, the encapsulation layer (115) is in direct contact with the sidewall (124) of the anode structure (102). Accordingly, two different encapsulation layers (115) may be disposed in the well (103). The encapsulation layer (115) may be made of any suitable material, such as a non-conductive inorganic material, such as a silicon-containing material. Silicon-containing materials may include Si3N4-containing materials.

[0020] A global encapsulation layer (118) disposed on the substrate (101) may also exist. The global encapsulation layer (118) extends over the cathode (114) disposed on the anode structure (102) and extends into the well (103). The global encapsulation layer (118) may also be in contact with the sidewalls (124) of the anode structure (102). The global encapsulation layer (118) may be made of any suitable material including a non-conductive inorganic material, such as a silicon-containing material. The silicon-containing material may include Si3N4-containing materials. In one or more embodiments, the global encapsulation layer (118) is disposed on the encapsulation layer (115).

[0021] The overhang (123) of the anode structure (102) allows the encapsulation layer (115) to separate the OLED material (113) and cathode (114) on the uppermost surface (127) of the anode structure (102) from the OLED material (113) and cathode (114) placed in each well (103). The separation of the OLED material (113) and cathode (114) by the encapsulation layer (115) allows current to flow individually to the sub-pixels (107).

[0022] A gap-fill material (109) is placed between adjacent anode structures (102) within the same sub-pixel line. For example, the gap-fill material (109) is placed between a first sub-pixel (107A) and a second sub-pixel (107B). The gap fill can be made of any suitable material. In one or more embodiments, the gap fill is made of a non-conductive material that can be flattened by a chemical mechanical polishing (CMP) process. The non-conductive material may include silicon nitride, silicon, or silicon oxide.

[0023] A passivation layer (112), an OLED material (113), and a cathode (114) are disposed on a gap-filling material (109). In some embodiments, the passivation layer (112), the OLED material (113), and the cathode (114) are disposed across the entire well (103) while in contact with the anode structures (102) of each sub-pixel forming the well (103). In some embodiments, an encapsulation layer (115) is disposed on the gap-filling material (109). Additionally, in some embodiments, the encapsulation layer (115) is disposed across the entire well (103) while in contact with the anode structures (102) of each sub-pixel (107) forming the well (103) within the same sub-pixel line.

[0024] FIG. 1c is a schematic plan view of a sub-pixel circuit (100) according to embodiments. It should be understood that FIG. 1c does not include an OLED material, a cathode (114), an encapsulation layer (115), or a global encapsulation layer (118) for illustrative purposes. One or more busbars (120) are disposed adjacent to the substrate (101). The busbars (120) provide current to the sub-pixel circuit (100). Although FIG. 1c depicts a sub-pixel circuit (100) comprising four busbars (120), it is considered that any number of busbars may be used, including but not limited to one busbar, two busbars, three busbars, or six busbars.

[0025] FIG. 2 is a flowchart of a method (200) for forming a sub-pixel circuit (100). FIGS. 3a through 3j are schematic cross-sectional views of a substrate on the x-axis (121) during the method for forming a sub-pixel circuit (100) according to the embodiments described herein. Although FIGS. 3a through 3j depict a substrate (101) having two anode structures (102), it should be understood that the method (200) can be performed on a substrate (101) having any number of anode structures (102).

[0026] In operation (201), anode structures (102) are formed (along the x-axis (121)) as illustrated in FIG. 3a. To form the anode structures (102), at least one anode layer is deposited. Depositing at least one anode layer may include depositing a first layer (104) and a second layer (105) on the substrate (101). A photoresist material is placed on at least one anode layer. The photoresist material is exposed to a lithography process so that the patterned photoresist exposes an area corresponding to the well (103). An etching process removes the exposed portions of one or more anode layers. Removing the exposed portions forms the anode structure (102). Subsequently, the patterned photoresist is removed. A passivation layer (112) is formed by the deposition of a passivation material on the substrate (101). The passivation material can be patterned by a lithography process that exposes parts of the passivation material to be removed by an etching process.

[0027] In operation (202), as illustrated in FIG. 3b (along the x-axis (121)), a first OLED material (113A), a first cathode (114A), and a first encapsulation layer (115A) are deposited. Shadowing of the overhang (123) within the well (103) supports electrical disconnection in the first OLED material (113A) and the first cathode (114A) placed on the uppermost surface (127) of the anode structure (102), and in a portion of the first OLED material (113A) and the first cathode (114A) placed in the well (103). The first OLED material (113A) and the first cathode (114A) maintain continuity along the y-axis (122). For example, the first OLED material (113A) and the first cathode (114A) are placed on a gap-filling material (109) across the well (103) between the anode structures (102).

[0028] In operation (203), as illustrated in FIG. 3c (along the x-axis (121)), a first protective photoresist (116) is formed. The first protective photoresist (116) is formed over the first sub-pixel line (106A) and the first half of the well (103). The first protective photoresist (116) exposes the anode structure (102) of the second half of the well (103) and the second sub-pixel line (106B) to be formed.

[0029] In operation (204), as illustrated in FIG. 3d (along the x-axis (121)), the first OLED material (113A), the first cathode (114A), and the first encapsulation layer (115A) exposed by the first protective photoresist (116) are removed. The first OLED material (113A), the first cathode (114A), and the first encapsulation layer (115A) may be removed by one or more etching processes. In operation (205), as illustrated in FIG. 3e, the first protective photoresist (116) is removed.

[0030] In operation (206), as illustrated in FIG. 3f (along the x-axis (121)), a second OLED material (113B), a second cathode (114B), and a second encapsulation layer (115B) are deposited. Shadowing of the overhang (123) within the well (103) supports electrical disconnection in the second OLED material (113B) and the second cathode (114B) placed on the uppermost surface (127) of the anode structure (102), and in a portion of the second OLED material (113B) and the second cathode (114B) placed in the well (103). The second OLED material (113B) and the second cathode (114B) maintain continuity along the y-axis (122). For example, the second OLED material (113B) and the second cathode (114B) are placed on a gap-filling material (109) across the well (103) between the anode structures (102).

[0031] In operation (207), as illustrated in FIG. 3g (along the x-axis (121)), a second protective photoresist (117) is formed. The second protective photoresist (117) is positioned over the anode structure (102) and the second half of the well (103). The second protective photoresist (117) exposes the anode structure (102) of the first half of the well (103) and the first sub-pixel line (106A). In operation (208), as illustrated in FIG. 3h (along the x-axis (121)), the second OLED material (113B), the second cathode (114B), and the second encapsulation layer (115B) exposed by the second protective photoresist (117) are removed. After the etching process is completed, in operation (209), the second protective photoresist (117) is removed (along the x-axis (121)) as shown in FIG. 3i.

[0032] In some embodiments, operations (206-209) may be repeated to produce a desired number of sub-pixels (107), each of which emits different light. In some embodiments, the process is repeated one more time to produce a total of three sub-pixels (107) in the sub-pixel circuit (100). In these embodiments, the first OLED material (113A) may emit red light when energized, the second OLED material (113B) may emit green light when energized, and the third OLED material (113C) may emit blue light when energized.

[0033] In operation (210), a global encapsulation layer (118) is deposited (along the x-axis (121)) as illustrated in FIG. 3j. The global encapsulation layer (118) is deposited over all sub-pixel lines (106A, 106B, and 106C). The advantages of the present disclosure include increased pixels per inch, reduced current leakage, increased device performance, increased device image resolution, reduced cost, and reduced maintenance. One or more aspects disclosed herein are considered to be combinable. For example, one or more aspects, features, components, operations and / or characteristics of a sub-pixel circuit (100), a substrate (101), an anode structure (102), a gap-filling material (109), a passivation layer (112), an OLED material (113), a cathode (114), an encapsulation layer (115), a global encapsulation layer (118), wells (103), sub-pixel lines (106A, 106B, 106C), sub-pixels (107A, 107B, 107C, 107D, 107E, 107F), bus bars (120), and / or method (200) may be combined. Furthermore, one or more aspects disclosed herein are considered to include some or all of the aforementioned advantages.

[0034] Although the foregoing relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the subsequent claims.

Claims

Claim 1 As a sub-pixel circuit, a first sub-pixel and a second sub-pixel — each of the first sub-pixel and the second sub-pixel is, Anode structure ― The anode structure has an overhang defined by an extension of the upper portion of the sidewall of the anode structure that extends past the lower portion of the sidewall of the anode structure ―, Organic light-emitting diode (OLED) material on the uppermost surface of the above anode structure, A cathode disposed on the OLED material disposed on the anode structure, and A sub-pixel circuit comprising: an encapsulation layer disposed on the cathode; and a well disposed between the first sub-pixel and the second sub-pixel, defined by adjacent anode structures of the first sub-pixel and the second sub-pixel, wherein the encapsulation layer separates the OLED material disposed on the uppermost surface of the anode structure and the cathode from the OLED material disposed in the well and the cathode. Claim 2 In claim 1, the anode structure comprises a metal-containing material, a sub-pixel circuit. Claim 3 In paragraph 2, the metal-containing material comprises a transparent conductive oxide (TCO), copper, titanium, aluminum, molybdenum, silver, chromium, or a combination thereof, in a sub-pixel circuit. Claim 4 In paragraph 3, the TCO material comprises indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium zinc oxide (IGZO), or a combination thereof, in a sub-pixel circuit. Claim 5 In claim 1, the anode structure comprises a first layer and a second layer, wherein the second layer is disposed on the first layer, a sub-pixel circuit. Claim 6 In claim 5, the sub-pixel circuit comprising the first layer and the second layer having different compositions. Claim 7 In claim 1, the encapsulation layer is a sub-pixel circuit that is in direct contact with the sidewall of the anode structure to separate the OLED material disposed on the uppermost surface of the anode structure and the cathode from the OLED material disposed in the well and the cathode. Claim 8 A sub-pixel circuit according to claim 1, wherein the encapsulation layer is in direct contact with a passivation layer disposed on the sidewall of the anode structure to separate the OLED material disposed on the uppermost surface of the anode structure and the cathode disposed in the well from the OLED material and the cathode disposed in the well. Claim 9 A sub-pixel circuit according to claim 1, wherein a passivation layer is disposed on the uppermost surface of the anode structure and on the upper portion of the sidewall. Claim 10 As a sub-pixel circuit, a first sub-pixel and a second sub-pixel — each of the first sub-pixel and the second sub-pixel is, An anode structure having two or more layers having different compositions — said anode structure has an overhang defined by an extension of the upper portion of the sidewall of said anode structure extending past the lower portion of the sidewall of said anode structure —, Organic light-emitting diode (OLED) material on the uppermost surface of the above anode structure, A cathode disposed on the OLED material disposed on the anode structure, and A sub-pixel circuit comprising: an encapsulation layer disposed on the cathode; and a well disposed between the first sub-pixel and the second sub-pixel, defined by adjacent anode structures of the first sub-pixel and the second sub-pixel, wherein the encapsulation layer separates the OLED material disposed on the uppermost surface of the anode structure and the cathode from the OLED material disposed in the well and the cathode. Claim 11 In claim 10, the above anode structure comprises a metal-containing material, sub-pixel circuit. Claim 12 In claim 11, the metal-containing material comprises a transparent conductive oxide (TCO), copper, titanium, aluminum, molybdenum, silver, chromium, or a combination thereof, in a sub-pixel circuit. Claim 13 In claim 12, the TCO material comprises indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium zinc oxide (IGZO), or a combination thereof, in a sub-pixel circuit. Claim 14 In claim 10, the encapsulation layer is a sub-pixel circuit that is in direct contact with the sidewall of the anode structure to separate the OLED material and the cathode on the uppermost surface of the anode structure from the OLED material and the cathode disposed in the well. Claim 15 In claim 10, the encapsulation layer is in direct contact with a passivation layer disposed on the sidewall of the anode structure to separate the OLED material disposed on the uppermost surface of the anode structure and the cathode disposed in the well from the OLED material and the cathode disposed in the well, a sub-pixel circuit. Claim 16 A sub-pixel circuit according to claim 10, wherein a passivation layer is disposed on the uppermost surface of the anode structure and on the upper portion of the sidewall. Claim 17 A sub-pixel circuit according to claim 10, wherein the OLED material of the first sub-pixel emits light of a first color when energized, and the second sub-pixel emits light of a second color when energized. Claim 18 A method comprising: forming at least two anode structures — each anode structure having an overhang defined by an extension of the upper portion of the sidewall of each anode structure extending past the lower portion of the sidewall of each anode structure —; depositing an organic light-emitting diode (OLED) material and a cathode corresponding to a first sub-pixel; and depositing an encapsulation layer — the encapsulation layer separating the OLED material and the cathode deposited on the uppermost surface of each anode structure from the OLED material and the cathode disposed in a well defined by adjacent anode structures of the first sub-pixel and the second sub-pixel —. Claim 19 In paragraph 18, the above anode structures comprise a metal-containing material, method. Claim 20 A method according to claim 19, wherein the metal-containing material comprises transparent conductive oxide (TCO), copper, titanium, aluminum, molybdenum, silver, chromium, or combinations thereof, and the TCO material comprises, but is not limited to, indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium zinc oxide (IGZO), or combinations thereof.

Images