Etchant Composition for Etching Silicon Oxide Layer

Abstract

The present invention provides a silicon oxide film etching solution composition comprising a strong acid having a pKa value of 2.5 or less, a fluorine compound, a C4-C20 alkylenediamine compound, and water. The silicon oxide film etching solution composition according to the present invention can suppress damage to the aluminum oxide film caused by the fluorine compound in the strong acid region, while ensuring etching performance of the silicon oxide film and providing excellent etching uniformity for the silicon oxide film.

Description

Technology Field

[0001] The present invention relates to a silicon oxide film etching solution composition, and more specifically, to a silicon oxide film etching solution composition that can suppress damage to an aluminum oxide film caused by a fluorine compound while exhibiting excellent etching performance on a silicon oxide film and having excellent etching uniformity. Background Technology

[0002] In semiconductor devices such as DRAM, NAND FLASH memory devices, and logic devices, development efforts to achieve large capacity while rapidly decreasing the critical dimension (CD) have recently been ongoing.

[0003] The above semiconductor device manufacturing process is carried out by performing a series of processes such as deposition, photolithography, etching, and ion implantation. Through these processes, various films such as oxide films, nitride films, polysilicon films, and metal films are formed on a wafer, and the desired devices are completed by patterning these films into a desired shape. In order to selectively wet-etch a desired film during the semiconductor device manufacturing process, an etching solution capable of removing the film to be etched with a high etching selectivity is required.

[0004] Buffered oxide etchant (BOE) has been mainly used as the etching solution composition for such silicon oxide films until now, but conventional BOE has a high content of fluorine compounds such as hydrofluoric acid (HF) or ammonium fluoride (NH4F), which is not only dangerous to handle but also causes problems by damaging the metal film formed on the substrate.

[0005] Korean Patent Publication No. 10-2015-0064970 discloses, as an example of a composition capable of selectively etching a silicon oxide film without loss of the metal film when etching a silicon oxide film, a silicon oxide film etching solution comprising a metal film corrosion inhibitor having one or more thiol groups.

[0006] However, the above etching solution also contains a large amount of fluorine compounds and has the problem of damaging metal films, particularly aluminum oxide films, so it is difficult to apply to substrates where silicon oxide and aluminum oxide films are simultaneously exposed. Prior art literature

[0007] Republic of Korea Published Patent No. 10-2015-0064970 The problem to be solved

[0008] One objective of the present invention is to provide a silicon oxide etching solution composition that can suppress damage to an aluminum oxide film caused by a fluorine compound, exhibits excellent etching performance on a silicon oxide film, and has excellent etching uniformity. means of solving the problem

[0009] On the one hand, the present invention relates to a strong acid having a pKa value of 2.5 or less, a fluorine compound, and C4-C 20 A silicon oxide film etching solution composition comprising an alkylenediamine compound and water is provided.

[0010] In one embodiment of the present invention, the pKa value of the strong acid compound may be -15 or higher and 2.5 or lower.

[0011] In one embodiment of the present invention, the strong acid compound may be one or more selected from the group consisting of phosphoric acid, methanesulfonic acid, and sulfuric acid.

[0012] In one embodiment of the present invention, the strong acid compound may be included in an amount of 80 to 94 weight percent with respect to 100 weight percent of the total composition.

[0013] In one embodiment of the present invention, the fluorine compound may be one or more selected from the group consisting of hydrofluoric acid, alkali metal fluoride salt, ammonium fluoride, ammonium bifluoride, and quaternary alkylammonium fluoride.

[0014] In one embodiment of the present invention, the fluorine compound may be included in an amount of 0.05 to 0.5 weight% with respect to 100 weight% of the total composition.

[0015] In one embodiment of the present invention, the alkylenediamine compound may be a compound represented by the following chemical formula 1.

[0016] [Chemical Formula 1]

[0017]

[0018] In the above formula,

[0019] n is an integer from 4 to 20.

[0021] In one embodiment of the present invention, n may be an integer from 4 to 16.

[0022] In one embodiment of the present invention, the alkylenediamine compound may be one or more selected from the group consisting of 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,8-diaminooctane, 1,12-diaminododecane and 1,16-diaminohexadecane.

[0023] In one embodiment of the present invention, the alkylenediamine compound may be included in an amount of 0.05 to 1 weight% with respect to 100 weight% of the total composition.

[0024] In one embodiment of the present invention, the water may be deionized water.

[0025] In one embodiment of the present invention, the water may be included in an amount of 5 to 20 weight percent with respect to 100 weight percent of the total composition. Effects of the invention

[0026] The silicon oxide film etching solution composition according to the present invention can suppress damage to the aluminum oxide film caused by fluorine compounds by controlling the concentration of etching species in a strong acid region, while ensuring etching performance of the silicon oxide film and providing excellent etching uniformity for the silicon oxide film. Specific details for implementing the invention

[0027] The present invention will be described in more detail below.

[0029] One embodiment of the present invention comprises a strong acid having a pKa value of 2.5 or less, a fluorine compound, and C4-C 20 This invention relates to a silicon oxide film etching solution composition comprising an alkylenediamine compound and water.

[0031] The silicon oxide film etching solution composition according to the present invention comprises a strong acid having a pKa value of 2.5 or less, a fluorine compound, and C4-C 20 By controlling the concentration of etching species in a strong acid region including alkylenediamine and water, the etching rate of the silicon oxide film is high, while the etching uniformity of the etched silicon oxide film is excellent, and the etching rate of the aluminum oxide film by the fluorine compound can be minimized.

[0033] The components of an etching solution composition according to one embodiment of the present invention will be described in more detail below.

[0035] Gangsan

[0036] In one embodiment of the present invention, the strong acid lowers the pH of the etching solution composition and inhibits the ionization of the fluorine compound described below, thereby enabling F to act as an etching species for the aluminum oxide film in the composition. - or HF2 - The amount of can be reduced, and accordingly, the silicon oxide film can be etched at a rapid rate while suppressing the etching of the aluminum oxide film.

[0037] The pKa value of the above strong acid is 2.5 or less, and may be, for example, -15 or more and 2.5 or less, -13 or more and 2.5 or less, -11 or more and 2.5 or less, or -10 or more and 2 or less.

[0038] When using an acid having a pKa value greater than 2.5, the ionization of the fluorine-based compound may not be sufficiently suppressed, and accordingly, the etching selectivity ratio of the silicon oxide film to the aluminum oxide film of the composition may be reduced.

[0039] Specific examples of the above strong acids include, but are not limited to, phosphoric acid, hydrochloric acid, methanesulfonic acid, and sulfuric acid. These may be used individually or in combination of two or more types.

[0040] The strong acid may be a main component of the silicon oxide film etching solution composition. Here, "main component" may refer to a component having a content of 50% or more with respect to 100% by weight of the total composition. When the strong acid is a main component of the silicon oxide film etching solution composition, the ionization and formation of etching species of the fluorine compound can be suppressed.

[0041] In one embodiment of the present invention, the strong acid may be included in an amount of 80 to 94 weight% based on 100 weight% of the total silicon oxide film etching solution composition. If the content of the strong acid is less than 80 weight%, the etching rate of the aluminum oxide film may increase, potentially causing damage to the protective film, and if it exceeds 94 weight%, the etching rate of the silicon oxide film may be significantly slowed down.

[0043] Fluorine compounds

[0044] In one embodiment of the present invention, the fluorine compound is a fluoride ion (F) for removing a silicon oxide film. - It can play the role of providing ).

[0045] The above fluorine compounds may include hydrofluoric acid, alkali metal fluoride salts, ammonium fluoride, ammonium bifluoride, quaternary alkylammonium fluoride, etc., but are not limited thereto.

[0046] Specific examples of the above alkali metal fluoride salts include sodium fluoride, potassium fluoride, sodium bifluoride, potassium bifluoride, etc.

[0047] Specific examples of the above-mentioned quaternary alkylammonium fluoride include tetraalkylammonium fluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, etc.

[0048] These can be used individually or in combination of two or more types.

[0050] In one embodiment of the present invention, the fluorine compound may be included in an amount of 0.05% to 0.5% by weight, more preferably 0.1% to 0.4% by weight, based on 100% by weight of the total silicon oxide film etching solution composition. If the content of the fluorine compound is less than 0.05% by weight, the etching rate of the silicon oxide film may decrease, and if it exceeds 0.5% by weight, it may cause damage to the aluminum oxide film which is a protective film.

[0052] Alkylenediamine Compounds

[0053] In one embodiment of the present invention, the C4-C 20 The alkylenediamine compound can react with the surface of the aluminum oxide film to control the etching rate of the aluminum oxide film.

[0054] The above alkylenediamine is C4-C 20 It is a molecule containing two types of primary amines separated by an alkylene group.

[0055] C4-C used in this specification 20 The alkylene group refers to a straight-chain or branched divalent hydrocarbon composed of 4 to 20 carbon atoms, and includes, but is not limited to, n-butylene, isobutylene, n-pentylene, n-hexylene, n-heptylene, n-octylene, n-nonylene, etc.

[0057] The above alkylenediamine compound may be a compound represented by the following chemical formula 1.

[0058] [Chemical Formula 1]

[0059]

[0060] In the above formula,

[0061] n is an integer from 4 to 20.

[0063] In one embodiment of the present invention, n may be an integer from 4 to 16 in terms of preventing etching of the aluminum oxide film.

[0064] Specific examples of compounds represented by the above chemical formula 1 include, but are not limited to, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,8-diaminooctane, 1,12-diaminododecane, 1,16-diaminohexadecane. These may be used alone or in a mixture of two or more.

[0065] In one embodiment of the present invention, the alkylenediamine compound may be included in an amount of 0.05 to 1.0 weight%, preferably 0.1 to 0.8 weight%, based on 100 weight% of the total silicon oxide film etching solution composition. If the content of the alkylenediamine compound is less than 0.05 weight%, the etching rate of the aluminum oxide film may be high, which may damage the protective film material, and if it exceeds 1.0 weight%, the etching rate of the silicon oxide film may be reduced.

[0067] Water

[0068] In one embodiment of the present invention, the water may be included in the composition to dissolve the fluorine compound.

[0069] The above water is not specifically limited, but deionized water (DIW) is preferred, and deionized water having a resistivity value of 18 MΩ·cm or higher, which indicates the degree to which ions are removed from the water, is more preferred.

[0070] In one embodiment of the present invention, the water may be included in an amount of 5 to 20 weight percent based on 100 weight percent of the total silicon oxide film etching solution composition. If the water content is less than 5 weight percent, the etching rate of the silicon oxide film may decrease, and if it exceeds 20 weight percent, it may cause damage to the aluminum oxide film which is a protective film.

[0072] In addition to the components described above, an etching solution composition according to one embodiment of the present invention may further include additives commonly used in the art, such as corrosion inhibitors.

[0074] The components used in the etching solution composition according to one embodiment of the present invention can be manufactured by a commonly known method and preferably have a purity suitable for semiconductor processes.

[0076] The silicon oxide film etching rate of the silicon oxide film etching solution composition according to one embodiment of the present invention may be 10 Å / min or more, and for example, may be 10 Å / min to 200 Å / min, 40 Å / min to 200 Å / min, or 60 Å / min to 200 Å / min.

[0077] A silicon oxide film etching solution composition according to one embodiment of the present invention may have a low etching rate for aluminum oxide films.

[0078] Specifically, the aluminum oxide film etching rate of the silicon oxide film etching solution composition may be less than 15 Å / min, for example, less than 5 Å / min or less than 2 Å / min.

[0079] Accordingly, the silicon oxide film etching solution composition according to one embodiment of the present invention has a high etching rate for silicon oxide films and a low etching rate for aluminum oxide films, so that silicon oxide films can be selectively etched.

[0081] One embodiment of the present invention relates to a method for manufacturing a semiconductor device comprising an etching process performed using the silicon oxide film etching solution composition described above.

[0082] The above etching process can be performed when forming various structures or patterns, such as wiring, contacts, and gates.

[0083] The above etching process may be performed by methods commonly known in the art. For example, methods such as immersion, spraying, or a combination of immersion and spraying may be used in a batch-type etching device or a single-type etching device.

[0084] According to a method for manufacturing a semiconductor device according to one embodiment of the present invention, a silicon oxide film can be formed on a silicon substrate. The silicon substrate may include single-crystal silicon, polysilicon, or amorphous silicon. The silicon oxide film may be formed through a chemical vapor deposition (CVD) process, a sputtering process, a physical vapor deposition (PVD) process, an atomic layer deposition (ALD) process, etc., or may be formed by the natural oxidation of silicon through exposure of the silicon substrate to air.

[0085] An aluminum oxide film can be formed on the silicon oxide film. The aluminum oxide film can be formed through a CVD process, a sputtering process, a PVD process, an ALD process, etc.

[0086] A pattern can be formed by partially etching the aluminum oxide film. For example, a portion of the aluminum oxide film may be partially etched until a portion of the silicon oxide film is exposed.

[0087] A silicon oxide film can be partially removed by using a silicon oxide film etching solution composition according to one embodiment of the present invention. In this case, only the silicon oxide film can be removed without etching the aluminum oxide film.

[0088] The silicon oxide film can be removed until a portion of the silicon substrate is exposed, and a source or drain electrode can be formed on the exposed silicon substrate.

[0090] The present invention will be explained more specifically below through examples, comparative examples, and experimental examples. These examples, comparative examples, and experimental examples are intended solely to illustrate the present invention, and it is obvious to those skilled in the art that the scope of the present invention is not limited thereto.

[0092] Examples 1 to 25 and Comparative Examples 1 to 9:

[0093] As shown in Tables 1 and 2 below, a silicon oxide etching solution composition was prepared by mixing each component (unit: weight%). The content of each component is the value calculated as the pure content (Net content).

[0094] Acid fluorine compounds amine compounds DIW Total amount A-1 A-2 A-3 A-4 A-5 B-1 B-2 C-1 C-2 C-3 C-4 Example 1 84.49 　 　 　 　 0.01 　 0.50 　 　 　 15.00 100 Example 2 84.45 　 　 　 　 0.05 　 0.50 　 　 　 15.00 100 Example 3 84.40 　 　 　 　 0.10 　 0.50 　 　 　 15.00 100 Example 4 84.30 　 　 　 　 0.20 　 0.50 　 　 　 15.00 100 Example 5 84.00 　 　 　 　 0.50 　 0.50 　 　 　 15.00 100 Example 6 83.70 　 　 　 　 0.80 　 0.50 　 　 　 15.00 100 Example 7 84.79 　 　 　 　 0.20 　 0.01 　 　 　 15.00 100 Example 8 84.75 　 　 　 　 0.20 　 0.05 　 　 　 15.00 100 Example 9 84.70 　 　 　 　 0.20 　 0.10 　 　 　 15.00 100 Example 10 84.30 　 　 　 　 0.20 　 0.50 　 　 　 15.00 100 Example 11 84.00 　 　 　 　 0.20 　 0.80 　 　 　 15.00 100 Example 12 83.80 　 　 　 　 0.20 　 1.00 　 　 　 15.00 100 Example 13 83.30 　 　 　 　 0.20 　 1.50 　 　 　 15.00 100 Example 14 84.60 　 　 　 　 0.20 　 　 0.20 　 　 15.00 100 Example 15 84.30 　 　 　 　 0.20 　 　 0.50 　 　 15.00 100 Example 16 96.30 　 　 　 　 0.20 　 0.50 　 　 　 3.00 100 Example 17 94.00 　 　 　 　 0.20 　 0.50 　 　 　 5.30 100 Example 18 80.00 　 　 　 　 0.20 　 0.50 　 　 　 19.30 100 Example 19 69.60 　 　 　 　 0.20 　 0.20 　 　 　 30.00 100 Example 20 84.60 　 　 　 　 　 0.20 0.20 　 　 　 15.00 100 Example 21 84.30 　 　 　 　 　 0.20 0.50 　 　 　 15.00 100 Example 22 　 84.60 　 　 　 0.20 　 0.20 　 　 　 15.00 100 Example 23 　 84.30 　 　 　 0.20 　 0.50 　 　 　 15.00 100 Example 24 　 　 84.60 　 　 0.20 　 0.20 　 　 　 15.00 100 Example 25 　 　 84.30 　 　 0.20 　 0.50 　 　 　 15.00 100

[0096] Acid fluorine compounds amine compounds DIW Total amount A-1 A-2 A-3 A-4 A-5 B-1 B-2 C-1 C-2 C-3 C-4 Comparative Example 1 89.80 　 　 　 　 　 　 0.20 　 　 　 10.00 100 Comparative Example 2 89.50 　 　 　 　 0.50 　 　 　 　 　 10.00 100 Comparative Example 3 84.30 　 　 　 　 0.20 　 　 　 0.50 　 15.00 100 Comparative Example 4 84.30 　 　 　 　 0.20 　 　 　 　 0.50 15.00 100 Comparative Example 5 　 99.60 　 　 　 0.20 　 0.20 　 　 　 　 100 Comparative Example 6 　 　 　 89.60 　 0.20 　 0.20 　 　 　 10.00 100 Comparative Example 7 　 　 　 　 89.60 0.20 　 0.20 　 　 　 10.00 100 Comparative Example 8 　 　 　 　 　 0.50 　 0.20 　 　 　 99.30 100 Comparative Example 9 5.00 　 　 　 　 0.50 　 0.20 　 　 　 94.30 100

[0098] A-1: Phosphoric acid

[0099] A-2: methanesulfonic acid

[0100] A-3: sulfuric acid

[0101] A-4: Acetic acid

[0102] A-5: Glycolic acid

[0103] B-1: Hydrofluoric acid

[0104] B-2: Ammonium bifluoride

[0105] C-1: 1,4-diaminobutane

[0106] C-2: 1,16-diaminohexadecane

[0107] C-3: butylamine

[0108] C-4: tris(3-aminopropyl)amine

[0110] Experimental Example 1:

[0111] The etching rate of a silicon oxide film was evaluated using the prepared etching solution composition, and the etching uniformity of the etched silicon oxide film was evaluated. The measurement results are shown in Tables 3 and 4 below.

[0113] (1) Evaluation of etching rate for silicon oxide film material

[0114] A specimen was prepared by cutting a silicon wafer, on which a silicon oxide film with a thickness of 200 Å was deposited, into a 2×2 cm section. The specimen was immersed for 1 minute in a 25°C constant temperature bath filled with the etching solution compositions of the examples and comparative examples. Subsequently, the specimen was removed, washed with water, and dried using N2. The etching rate for the film quality of each substrate was evaluated by measuring the film thickness before and after immersion using an ellipsometer and according to the following criteria.

[0115] <Silicon Oxide Etching Evaluation Criteria>

[0116] ◎ : Etching rate 60 Å / min or higher

[0117] ○ : Etching rate 40 Å / min or higher and less than 60 Å / min

[0118] △ : Etching rate 10 Å / min or more and less than 40 Å / min

[0119] × : Etching rate less than 10 Å / min or no etching

[0121] (2) Evaluation of etching uniformity (surface roughness) of silicon oxide film

[0122] After performing the etching process in the same manner as in the etching rate evaluation above, the surface of the specimen was observed using Atomic Force Microscopy (AFM), and the surface roughness was evaluated according to the following evaluation criteria.

[0123] Surface Roughness Evaluation Criteria

[0124] ◎ : RMS less than 5 Å

[0125] ○ : RMS 5 Å or more and less than 10 Å

[0126] × : RMS 10 Å or higher

[0128] Experimental Example 2:

[0129] The etching rate of an aluminum oxide film was evaluated using the prepared etching solution composition. The measurement results are shown in Tables 3 and 4 below.

[0131] (1) Evaluation of etching rate for aluminum oxide film quality

[0132] A specimen was prepared by cutting a silicon wafer, on which an aluminum oxide film with a thickness of 140 Å was deposited, into a 2×2 cm section. The specimen was immersed for 1 minute in a 25°C constant temperature bath filled with the etching solution compositions of the examples and comparative examples. Subsequently, the specimen was removed, washed with water, and dried using N2. The etching rate for the film quality of each substrate was evaluated by measuring the film thickness before and after immersion using an ellipsometer and according to the following criteria.

[0133] <Aluminum Oxide Etching Evaluation Criteria>

[0134] ◎ : Etching rate 0 Å / min or higher, less than 2 Å / min

[0135] ○ : Etching rate 2 Å / min or more and less than 5 Å / min

[0136] △ : Etching rate 5 Å / min or more and less than 15 Å / min

[0137] × : Etching rate 15 Å / min or higher

[0139] Silicon oxide etching rate Silicon oxide film surface roughness Aluminum oxide film etching rate Example 1 △ ◎ ◎ Example 2 ○ ◎ ◎ Example 3 ◎ ◎ ◎ Example 4 ◎ ◎ ◎ Example 5 ◎ ◎ ◎ Example 6 ◎ ○ △ Example 7 ◎ ◎ △ Example 8 ○ ◎ ○ Example 9 ◎ ◎ ◎ Example 10 ◎ ◎ ◎ Example 11 ◎ ◎ ◎ Example 12 ◎ ◎ ◎ Example 13 △ ◎ ◎ Example 14 ◎ ◎ ◎ Example 15 ◎ ◎ ◎ Example 16 △ ◎ ◎ Example 17 ◎ ◎ ◎ Example 18 ◎ ◎ ◎ Example 19 ◎ ○ △ Example 20 ◎ ◎ ◎ Example 21 ◎ ◎ ◎ Example 22 ◎ ◎ ◎ Example 23 ◎ ◎ ◎ Example 24 ◎ ◎ ◎ Example 25 ◎ ◎ ◎

[0141] Silicon oxide etching rate Silicon oxide film surface roughness Aluminum oxide film etching rate Comparative Example 1 × ◎ ◎ Comparative Example 2 ◎ ◎ × Comparative Example 3 ◎ ◎ × Comparative Example 4 ◎ ◎ × Comparative Example 5 × ◎ ◎ Comparative Example 6 × ◎ ◎ Comparative Example 7 × ◎ ◎ Comparative Example 8 ◎ ○ × Comparative Example 9 ◎ ○ ×

[0143] As shown in Table 3 above, strong acids, fluorine compounds, and C4-C having a pKa value of 2.5 or less 20 When using the etching solution compositions of Examples 1 to 25 containing an alkylenediamine compound and water, it was confirmed that the silicon oxide etching rate and the etching uniformity of the silicon oxide film were good, and damage to the aluminum oxide film acting as a protective film was suppressed.

[0144] On the other hand, as shown in Table 4, it was confirmed that when using the etching solution compositions of Comparative Examples 1 and 5, which do not contain either a fluorine compound or water, etching of the silicon oxide film is difficult, and when using the etching solution compositions of Comparative Examples 2 to 4, which do not contain the alkylenediamine compound, the etching rate of the aluminum oxide film increases.

[0145] In addition, it was confirmed that when using the etching solution compositions of Comparative Examples 6 and 7, which use an organic acid having a pKa value greater than 2.5 instead of the strong acid, etching of the silicon oxide film is difficult, and when using the etching solution composition of Comparative Example 8, which does not contain the strong acid and contains an excess amount of water, the etching rate of the aluminum oxide film increases.

[0147] As specific parts of the present invention have been described in detail above, it is evident to those skilled in the art that such specific descriptions are merely preferred embodiments and do not limit the scope of the present invention. Those skilled in the art will be able to make various applications and modifications within the scope of the present invention based on the above description.

[0148] Accordingly, the substantial scope of the present invention shall be defined by the appended claims and their equivalents.

Claims

Claim 1 Strong acids having a pKa value of 2.5 or less, fluorine compounds, C4-C 20 A silicon oxide film etching solution composition comprising an alkylenediamine compound and water. Claim 2 A silicon oxide film etching solution composition according to claim 1, wherein the pKa value of the strong acid compound is -15 or higher and 2.5 or lower. Claim 3 A silicon oxide film etching solution composition according to claim 1, wherein the strong acid compound is one or more selected from the group consisting of phosphoric acid, methanesulfonic acid, and sulfuric acid. Claim 4 A silicon oxide film etching solution composition according to claim 1, wherein the strong acid compound is included in an amount of 80 to 94 weight% based on 100 weight% of the total composition. Claim 5 A silicon oxide film etching solution composition according to claim 1, wherein the fluorine compound is one or more selected from the group consisting of hydrofluoric acid, alkali metal fluoride salts, ammonium fluoride, ammonium bifluoride, and quaternary alkylammonium fluoride. Claim 6 A silicon oxide film etching solution composition according to claim 1, wherein the fluorine compound is included in an amount of 0.05 to 0.5 weight% based on 100 weight% of the total composition. Claim 7 A silicon oxide film etching solution composition according to claim 1, wherein the alkylenediamine compound is a compound represented by the following chemical formula 1: In the above formula, n is an integer from 4 to 20. Claim 8 A silicon oxide film etching solution composition according to claim 7, wherein n is an integer from 4 to 16. Claim 9 A silicon oxide film etching solution composition according to claim 7, wherein the alkylenediamine compound is one or more selected from the group consisting of 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,8-diaminooctane, 1,12-diaminododecane and 1,16-diaminohexadecane. Claim 10 A silicon oxide film etching solution composition according to claim 1, wherein the alkylenediamine compound is included in an amount of 0.05 to 1 weight% based on 100 weight% of the total composition. Claim 11 In claim 1, the above water is a silicon oxide film etching solution composition in which the water is deionized water. Claim 12 A silicon oxide film etching solution composition according to claim 1, wherein the water is included in an amount of 5 to 20 weight% based on 100 weight% of the total composition.

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