Display device and electronic device including the same

Abstract

The display device includes a light-emitting element layer disposed on a display area on a substrate, a first inorganic encapsulation layer disposed on the light-emitting element layer, an organic encapsulation layer disposed on the first inorganic encapsulation layer, and a second inorganic encapsulation layer disposed on the organic encapsulation layer and comprising silicon nitride (SiNx) having a combined ratio of Si-N and a combined ratio of NH of 89% or less, and a polarizing film disposed on the encapsulation layer.

Description

Technology Field

[0001] The present invention relates to a display device and an electronic device including the same. More specifically, the present invention relates to a display device that provides visual information and an electronic device including the same. Background Technology

[0002] As information technology develops, the importance of display devices, which serve as a medium of connection between users and information, is being highlighted. Accordingly, the use of display devices such as liquid crystal display devices, organic light emitting display devices, and plasma display devices is increasing.

[0003] These display devices incorporate a polarizing film to minimize the reflection of light introduced from the outside from the front of the display device. The problem to be solved

[0004] One objective of the present invention is to provide a display device with improved reliability.

[0005] Another objective of the present invention is to provide an electronic device including the above-mentioned display device.

[0006] However, the objectives of the present invention are not limited to such objectives, and may be expanded in various ways without departing from the spirit and scope of the invention. means of solving the problem

[0007] To achieve one objective of the present invention as described above, a display device according to embodiments of the present invention comprises a light-emitting element layer disposed in a display area on a substrate, a first inorganic encapsulation layer disposed on the light-emitting element layer, an organic encapsulation layer disposed on the first inorganic encapsulation layer, and a silicon nitride (SiN) disposed on the organic encapsulation layer, wherein the sum of the bonding ratio of Si-N and the bonding ratio of NH is about 89% or less. x It may include a sealing layer comprising a second inorganic sealing layer including ) and a polarizing film disposed on the sealing layer.

[0008] In one embodiment, the Si-N bonding ratio of the second inorganic encapsulation layer may be about 85% or more and less than 86%.

[0009] In one embodiment, the Si-H bond ratio of the second inorganic encapsulation layer may be about 11% or more and about 12% or less.

[0010] In one embodiment, the refractive index of the second inorganic encapsulation layer may be about 1.88 or higher and about 1.90 or lower.

[0011] In one embodiment, the refractive index of the first inorganic encapsulation layer and the refractive index of the second inorganic encapsulation layer may be substantially the same.

[0012] In one embodiment, the polarizing film may include a phase delay layer disposed on the encapsulation layer, an adhesive layer disposed between the encapsulation layer and the phase delay layer and attaching the encapsulation layer and the phase delay layer, a protective layer disposed on the phase delay layer, and a polarizing layer disposed on the protective layer.

[0013] In one embodiment, the adhesive layer may include a pressure-sensitive adhesive (PSA).

[0014] In one embodiment, the pressure-sensitive adhesive may include an acrylic resin having acrylic acid as the main component.

[0015] In one embodiment, the protective layer may include triacetyl cellulose (TAC).

[0016] In one embodiment, the polarizing layer may include polyvinyl alcohol (PVA).

[0017] In one embodiment, the second inorganic encapsulation layer of the encapsulation layer may not be in direct contact with the polarizing film.

[0018] In one embodiment, the display device may further include an anti-oxidation layer comprising an insulating material disposed between the encapsulation layer and the polarizing film.

[0019] In one embodiment, the antioxidant layer may include an organic material.

[0020] In one embodiment, the antioxidant layer is silicon oxide (SiO₂). x It may include ).

[0021] In one embodiment, the first inorganic encapsulation layer may include silicon nitride.

[0022] To achieve another objective of the present invention as described above, an electronic device according to embodiments of the present invention comprises a light-emitting element layer disposed in a display area on a substrate, a first inorganic encapsulation layer disposed on the light-emitting element layer, an organic encapsulation layer disposed on the first inorganic encapsulation layer, and a silicon nitride (SiN) disposed on the organic encapsulation layer, wherein the sum of the bonding ratio of Si-N and the bonding ratio of NH is about 89% or less. xA display device comprising a sealing layer including a second inorganic sealing layer including ) and a polarizing film disposed on the sealing layer, and a power module comprising a power supply module that supplies external power and a power conversion module that converts the external power supplied by the power supply module to generate a power voltage provided to the display area.

[0023] In one embodiment, the Si-N bonding ratio of the second inorganic encapsulation layer may be about 85% or more and about 86% or less.

[0024] In one embodiment, the Si-H bond ratio of the second inorganic encapsulation layer may be about 11% or more and about 12% or less.

[0025] In one embodiment, the refractive index of the second inorganic encapsulation layer may be about 1.88 or higher and about 1.90 or lower.

[0026] In one embodiment, the polarizing film may include a phase delay layer disposed on the encapsulation layer, an adhesive layer disposed between the encapsulation layer and the phase delay layer and attaching the encapsulation layer and the phase delay layer, a protective layer disposed on the phase delay layer, and a polarizing layer disposed on the protective layer. Effects of the invention

[0027] In a display device according to embodiments of the present invention, the sum of the bonding ratio of Si-N and the bonding ratio of NH in a second inorganic encapsulation layer comprising silicon nitride, which is in contact with an adhesive layer that attaches a polarizing film and an encapsulation layer, may be about 89% or less. Accordingly, discoloration of the polarizing film due to external moisture penetration can be minimized or prevented.

[0028] However, the effects of the present invention are not limited to the above effects, and may be extended in various ways without departing from the spirit and scope of the present invention. Brief explanation of the drawing

[0029] FIG. 1 is a plan view showing a display device according to embodiments of the present invention. FIG. 2 is a cross-sectional view showing the configurations of the display device of FIG. 1. Figure 3 is a cross-sectional view showing the configurations of the polarizing film of Figure 2. Figure 4 is a circuit diagram showing the circuit structure of one pixel of Figure 1. Figure 5 is a cross-sectional view showing an example of area A of Figure 2. Figure 6 is a graph showing the Si-H bond ratio, Si-H bond ratio, and NH bond ratio of the second inorganic encapsulation layer according to the comparative example and the embodiment. Figure 7 is a cross-sectional view showing another example of area A of Figure 2. FIG. 8 is a block diagram showing an electronic device according to embodiments of the present invention. FIG. 9 is a schematic diagram showing an electronic device according to various embodiments. Specific details for implementing the invention

[0030] Hereinafter, a display device according to embodiments of the present invention will be described in more detail with reference to the attached drawings. Identical components in the drawings will be referred to by the same reference numerals, and redundant descriptions of identical components will be omitted.

[0031] In this specification, a plane may be defined by a first direction (DR1) and a second direction (DR2) that intersects the first direction (DR1). For example, the second direction (DR2) may be perpendicular to the first direction (DR1). Additionally, a third direction (DR3) may be a normal direction to the plane. That is, the third direction (DR3) may be perpendicular to the plane.

[0032] FIG. 1 is a plan view showing a display device according to embodiments of the present invention.

[0033] Referring to FIG. 1, a display device (DD) according to embodiments of the present invention may include a display panel (DP), a driving integrated circuit (DIC), and a circuit board (CB).

[0034] The above-described display device (DD) may have a rectangular planar shape (for example, a rectangular planar shape with rounded corners). However, embodiments of the present invention are not necessarily limited thereto, and the above-described display device (DD) may have various planar shapes.

[0035] The above display panel (DP) may include a display area (DA) and a surrounding area (PA). The display area (DA) may be an area capable of displaying an image by generating light or adjusting the transmittance of light provided from an external light source. The surrounding area (PA) may be an area that does not display an image. The surrounding area (PA) may be located around the display area (DA). For example, the surrounding area (PA) may completely surround the display area (DA).

[0036] The above display panel (DP) may include a plurality of pixels (PX) arranged in the above display area (DA). The pixels (PX) may be arranged in a matrix form along a first direction (DR1) and a second direction (DR2) intersecting the first direction (DR1). However, embodiments of the present invention are not necessarily limited thereto, and the pixels (PX) may be arranged in various forms.

[0037] Each of the above pixels (PX) may include a driving element (e.g., a driving thin-film transistor) that generates a driving current and a light-emitting element that is electrically connected to the driving element and generates light based on the driving current. Accordingly, the pixels (PX) can emit light according to the driving current. By the pixels (PX) emitting light, the display area (DA) can display an image.

[0038] In the above display area (DA), wiring connected to the pixels (PX) may be further arranged. For example, the wiring may include data wiring, gate signal wiring, light emission control wiring, etc.

[0039] Driving units for driving the pixels (PX) may be disposed in the surrounding area (PA). For example, the driving units may include a gate driving unit, a light-emitting driving unit, etc. The gate driving unit may output a gate signal (e.g., a first gate signal (GW), a second gate signal (GI), and a third gate signal (GB) of FIG. 4). The light-emitting driving unit may output a light-emitting control signal (e.g., a light-emitting control signal (EM) of FIG. 4). The pixels (PX) may emit light based on the signals received from the driving units.

[0040] The above peripheral area (PA) may include a pad area (PDA). The pad area (PDA) may be located on one side of the display area (DA). The pad area (PDA) may extend in the first direction (DR1).

[0041] The driving integrated circuit (DIC) can be bonded to the pad area (PDA) on the display panel (DP). Accordingly, the driving integrated circuit (DIC) can be electrically connected to the display panel (DP).

[0042] The driving integrated circuit (DIC) can convert a digital data signal among the driving signals into an analog data signal and provide it to the pixels (PX). For example, the driving integrated circuit (DIC) may be a data driving unit.

[0043] The circuit board (CB) can be bonded to one end of the pad area (PDA) on the display panel (DP). Accordingly, the circuit board (CB) can be electrically connected to the display panel (DP). The other end of the circuit board (CB) can be electrically connected to an external device. Signals generated from the external device (e.g., control signals, etc.), voltages (e.g., driving voltage (ELVDD), common voltage (ELVSS), initialization voltage (VINT), etc. of FIG. 4), etc., can be provided to the driving integrated circuit (DIC) and the pixels (PX) through the circuit board (CB).

[0044] For example, the circuit board (CB) may be a flexible printed circuit board (FPCB), a printed circuit board (PCB), or a flexible flat cable (FFC).

[0045] In FIG. 1, the driving integrated circuit (DIC) is shown to be arranged in a COP (chip on plastic) or COG (chip on glass) manner, where it is directly attached to the substrate of the display panel (DP); however, embodiments of the present invention are not necessarily limited thereto. For example, the driving integrated circuit (DIC) may be arranged in a COF (chip on film) manner, where it is directly attached to a flexible film. In this case, one end of the flexible film may be bonded to the pad area (PDA), and the circuit board (CB) may be bonded to the other end of the flexible film.

[0046] Hereinafter, the stacked structure of the display device (DD) will be described with reference to FIG. 2.

[0047] FIG. 2 is a cross-sectional view showing the configurations of the display device of FIG. 1. FIG. 3 is a cross-sectional view showing the configurations of the polarizing film of FIG. 2.

[0048] Referring to FIGS. 2 and 3, the display device (DD) may further include a polarizing film (POL), a second adhesive layer (ADL2), and a window member (WN) sequentially disposed along the third direction (DR3) on the display panel (DP). Here, the display panel (DP) may include a substrate (SUB), a circuit layer (DP-CL) disposed on the substrate (SUB), a light-emitting element layer (DP-EL) disposed on the circuit layer (DP-CL), and an encapsulation layer (ENC) disposed on the light-emitting element layer (DP-EL).

[0049] The above substrate (SUB) may be a glass substrate, a metal substrate, or a polymer substrate. In one embodiment, the above substrate (SUB) may be a flexible polymer substrate. However, the embodiments of the present invention are not necessarily limited thereto, and the above substrate (SUB) may be an inorganic layer, an organic layer, or a composite material layer.

[0050] The light-emitting element layer (DP-EL) may include a light-emitting element that generates light. For example, the light-emitting element may include an organic light-emitting material, an inorganic light-emitting material, an organic-inorganic light-emitting material, a quantum dot, a micro LED, or a nano LED.

[0051] The above-mentioned encapsulation layer (ENC) can protect the light-emitting element layer (DP-EL) from foreign substances such as moisture and oxygen. For example, the above-mentioned encapsulation layer (ENC) may include at least one inorganic layer and at least one organic layer. A detailed description of the above-mentioned encapsulation layer (ENC) will be provided later.

[0052] The above polarizing film (POL) can reduce the reflectance of external light incident from outside the display device (DD). In one embodiment, the polarizing film (POL) may include a first adhesive layer (ADL1), a phase delay layer (PHL), a protective layer (PRL), a polarizing layer (PL), and a hard coating layer (OF) that are sequentially laminated along the third direction (DR3).

[0053] The hard coating layer (OF) may be disposed on one side of the polarizing layer (PL). That is, the hard coating layer (OF) may be disposed on the top layer of the polarizing film (POL). The hard coating layer (OF) can protect the components of the polarizing film (POL) from external impact. For example, the hard coating layer (OF) may include triacetyl cellulose (TAC), cyclo olefin polymer (COP), polymethyl methacrylate (PMMA), etc. These may be used alone or in combination. Additionally, one side of the hard coating layer (OF) may have an anti-reflection treatment, glare It may be treated with anti-fingerprint and / or anti-fingerprint treatment.

[0054] The polarization layer (PL) described above can serve to polarize incident light into light in the same direction as the polarization axis. In one embodiment, the polarization layer (PL) may include polyvinyl alcohol. For example, the polarization layer (PL) may be formed by including a polarizer and / or a dichroic dye in a film containing the polyvinyl alcohol. The dichroic dye may be an iodine molecule and / or a dye molecule. Optionally, the polarization layer (PL) may be formed by stretching the film containing the polyvinyl alcohol in one direction and immersing it in a solution of iodine and / or a dichroic dye. In this case, the iodine molecules and / or the dichroic dye molecules may be arranged parallel to the stretching direction. Since the iodine molecules and the dye molecules exhibit dichroism, they can absorb light vibrating in the stretching direction and transmit light vibrating in a direction perpendicular thereto.

[0055] The protective layer (PRL) may be disposed on the other side of the polarizing layer (PL). The protective layer (PRL) may serve as a protective layer that supports the polarizing layer (PL) and complements the mechanical strength of the polarizing layer (PL). For example, the protective layer (PRL) may include triacetyl cellulose, cycloolefin polymer, polymethyl methacrylate, etc. These may be used alone or in combination with each other. In one embodiment, the protective layer (PRL) may include triacetyl cellulose.

[0056] The phase delay layer (PHL) may be disposed on the other side of the protective layer (PRL). The phase delay layer (PHL) may change the phase of light. The phase delay layer (PHL) may delay the phase of light linearly polarized by the polarization layer (PL) to change the polarization state to elliptical polarization (or circular polarization). For example, the phase delay layer (PHL) may include a half wave plate (HWP) having λ / 2 plate characteristics and / or a quarter wave plate (QWP) having λ / 4 plate characteristics. For example, the half wave plate may be a film type or a liquid crystal coating type, and the quarter wave plate may be a film type or a liquid crystal coating type.

[0057] The first adhesive layer (ADL1) may be disposed on the other side of the phase delay layer (PHL). That is, it may be disposed on the bottom layer of the polarizing film (POL). The polarizing film (POL) may be attached to the display panel (DP) through the first adhesive layer (ADL1). Specifically, the polarizing film (POL) may be attached to the encapsulation layer (ENC) of the display panel (DP) through the first adhesive layer (ADL1). For example, the first adhesive layer (ADL1) may include a pressure-sensitive adhesive (PSA), an optically clear adhesive (OCA), or an optically clear resin (OCR). In one embodiment, the first adhesive layer (ADL1) may include a pressure-sensitive adhesive. The pressure-sensitive adhesive may include a polymer cured product. For example, the pressure-sensitive adhesive may include an acrylic resin having acrylic acid as a main component.

[0058] The window member (WN) may be attached to the polarizing film (POL) through the second adhesive layer (ADL2). The window member (WN) may include a base film comprising a glass film or a synthetic resin film. The window member (WN) may further include an anti-reflective layer or an anti-fingerprint layer. For example, the second adhesive layer (ADL2) may include a pressure-sensitive adhesive, an optically transparent adhesive, or an optically transparent resin. In one embodiment, the second adhesive layer (ADL2) may include a pressure-sensitive adhesive.

[0059] Figure 4 is a circuit diagram showing the circuit structure of one pixel of Figure 1.

[0060] Referring to FIG. 4, each pixel (PX) may include a pixel driving circuit (PC) and a light-emitting element (LED) electrically connected to the pixel driving circuit (PC). The pixel driving circuit (PC) may generate a driving current (IOLED), and the light-emitting element (LED) may generate light based on the driving current (IOLED).

[0061] For example, the pixel driving circuit (PC) may include a first transistor (T1), a second transistor (T2), a third transistor (T3), a fourth transistor (T4), a fifth transistor (T5), a sixth transistor (T6), a seventh transistor (T7), and a storage capacitor (CST).

[0062] For example, the first transistor (T1), the second transistor (T2), the third transistor (T3), the fourth transistor (T4), the fifth transistor (T5), the sixth transistor (T6), and the seventh transistor (T7) may be PMOS transistors. However, embodiments of the present invention are not necessarily limited thereto, and some of the first transistor (T1), the second transistor (T2), the third transistor (T3), the fourth transistor (T4), the fifth transistor (T5), the sixth transistor (T6), and the seventh transistor (T7) may be NMOS transistors and the rest may be PMOS transistors.

[0063] When the pixel driving circuit (PC) includes an NMOS transistor and a PMOS transistor, the active pattern of the NMOS transistor may include a metal oxide semiconductor, and the active pattern of the PMOS transistor may include a silicon semiconductor. However, embodiments of the present invention are not necessarily limited thereto, and the active pattern of the NMOS transistor may include a silicon semiconductor, and the active pattern of the PMOS transistor may include a metal oxide semiconductor.

[0064] The first transistor (T1) may include a gate electrode, a first electrode, and a second electrode. The gate electrode of the first transistor (T1) may be connected to a first node (N1). The first electrode of the first transistor (T1) may be connected to a second node (N2). The second electrode of the first transistor (T1) may be connected to a third node (N3). The first transistor (T1) may provide the driving current (IOLED) to the light-emitting element (LED). The first transistor (T1) may be referred to as a driving transistor.

[0065] The second transistor (T2) may include a gate electrode, a first electrode, and a second electrode. A first gate signal (GW) may be applied to the gate electrode of the second transistor (T2). A data voltage (DATA) may be applied to the first electrode of the second transistor (T2). The second electrode of the second transistor (T2) may be connected to the second node (N2).

[0066] The second transistor (T2) may be turned on or turned off in response to the first gate signal (GW). For example, if the first gate signal (GW) has an active level, the second transistor (T2) may be turned on. In this case, the second transistor (T2) may provide the data voltage (DATA) to the second node (N2). Conversely, if the first gate signal (GW) has an inactive level, the second transistor (T2) may be turned off. In this case, the second transistor (T2) may block the supply of the data voltage (DATA).

[0067] The third transistor (T3) may include a gate electrode, a first electrode, and a second electrode. The first gate signal (GW) may be applied to the gate electrode of the third transistor (T3). The first electrode of the third transistor (T3) may be connected to the third node (N3). The second electrode of the third transistor (T3) may be connected between the first node (N1) and the second electrode of the fourth transistor (T4).

[0068] The third transistor (T3) may be turned on or turned off in response to the first gate signal (GW). For example, if the first gate signal (GW) has an active level, the third transistor (T3) may be turned on. In this case, the third transistor (T3) may diode-connect the first transistor (T1). That is, the third transistor (T3) may compensate for the threshold voltage of the first transistor (T1). Conversely, if the first gate signal (GW) has an inactive level, the third transistor (T3) may be turned off. In this case, the third transistor (T3) may not diode-connect the first transistor (T1).

[0069] The fourth transistor (T4) may include a gate electrode, a first electrode, and a second electrode. The second gate signal (GI) may be applied to the gate electrode of the fourth transistor (T4). The initialization voltage (VINT) may be applied to the first electrode of the fourth transistor (T4). The second electrode of the fourth transistor (T4) may be connected to the second electrode of the third transistor (T3).

[0070] The fourth transistor (T4) may be turned on or turned off in response to the second gate signal (GI). For example, if the second gate signal (GI) has an active level, the fourth transistor (T4) may be turned on. In this case, the fourth transistor (T4) may provide the initialization voltage (VINT) to the second electrode of the third transistor (T3). Conversely, if the second gate signal (GI) has an inactive level, the fourth transistor (T4) may block the supply of the initialization voltage (VINT).

[0071] The fifth transistor (T5) may include a gate electrode, a first electrode, and a second electrode. The light emission control signal (EM) may be applied to the gate electrode of the fifth transistor (T5). The driving voltage (ELVDD) may be applied to the first electrode of the fifth transistor (T5). The second electrode of the fifth transistor (T5) may be connected to the second node (N2).

[0072] The sixth transistor (T6) may include a gate electrode, a first electrode, and a second electrode. The light emission control signal (EM) may be applied to the gate electrode of the sixth transistor (T6). The first electrode of the sixth transistor (T6) may be connected to the third node (N3). The second electrode of the sixth transistor (T6) may be connected to the second electrode of the seventh transistor (T7).

[0073] The fifth transistor (T5) and the sixth transistor (T6) may be turned on or turned off in response to the light emission control signal (EM). For example, when the light emission control signal (EM) has an active level, the fifth transistor (T5) and the sixth transistor (T6) may be turned on. In this case, the fifth transistor (T5) and the sixth transistor (T6) may provide the driving current (IOLED) generated in the first transistor (T1) to the anode electrode of the light-emitting element (LED). Conversely, when the light emission control signal (EM) has an inactive level, the fifth transistor (T5) and the sixth transistor (T6) may cut off the supply of the driving current (IOLED) generated in the first transistor (T1).

[0074] The seventh transistor (T7) may include a gate electrode, a first electrode, and a second electrode. The third gate signal (GB) may be applied to the gate electrode of the seventh transistor (T7). The initialization voltage (VINT) may be applied to the first electrode of the seventh transistor (T7). The second electrode of the seventh transistor (T7) may be connected to the second electrode of the sixth transistor (T6).

[0075] The seventh transistor (T7) may be turned on or turned off in response to the third gate signal (GB). For example, if the third gate signal (GB) has an active level, the seventh transistor (T7) may be turned on. In this case, the seventh transistor (T7) may provide the initialization voltage (VINT) to the anode electrode of the light-emitting element (LED). Conversely, if the third gate signal (GB) has an inactive level, the seventh transistor (T7) may cut off the supply of the initialization voltage (VINT).

[0076] In one embodiment, the first electrode of each of the first to seventh transistors (T1, T2, T3, T4, T5, T6, T7) may be a source electrode, and the second electrode of each of the first to seventh transistors (T1, T2, T3, T4, T5, T6, T7) may be a drain electrode. However, embodiments of the present invention are not necessarily limited thereto, and at least one first electrode of the first to seventh transistors (T1, T2, T3, T4, T5, T6, T7) may be a drain electrode, and the remaining second electrode of the first to seventh transistors (T1, T2, T3, T4, T5, T6, T7) may be a source electrode.

[0077] The storage capacitor (CST) may include a first electrode and a second electrode. The driving voltage (ELVDD) may be applied to the first electrode of the storage capacitor (CST). The second electrode of the storage capacitor (CST) may be connected to the first node (N1).

[0078] The light-emitting element (LED) may include an anode electrode and a cathode electrode. The anode electrode of the light-emitting element (LED) may be connected to the second electrode of the sixth transistor (T6) and the second electrode of the seventh transistor (T7). The common voltage (ELVSS) may be applied to the cathode electrode of the light-emitting element (LED). The common voltage (ELVSS) may have a voltage level lower than the driving voltage (ELVDD).

[0079] In FIG. 4, a pixel driving circuit (PC) is shown to include seven transistors and one capacitor, but embodiments of the present invention are not necessarily limited thereto.

[0080] Figure 5 is a cross-sectional view showing an example of area A of Figure 2.

[0081] Referring to FIG. 5, as described above, the display panel (DP) may include the substrate (SUB), the circuit layer (DP-CL) disposed on the substrate (SUB), the light-emitting element layer (DP-EL) disposed on the circuit layer (DP-CL), and the encapsulation layer (ENC) disposed on the light-emitting element layer (DP-EL). Here, the circuit layer (DP-CL) may include a buffer layer (BFR), a transistor (TR), a gate insulating layer (GIL), an interlayer insulating layer (ILD), and a via insulating layer (VIA), and the light-emitting element layer (DP-EL) may include a pixel defining film (PDL) and a light-emitting element (LED).

[0082] The buffer layer (BFR) may be disposed on the substrate (SUB). The buffer layer (BFR) can prevent metal atoms or impurities from the substrate (SUB) from diffusing into the transistor (TR). Additionally, the buffer layer (BFR) can improve the flatness of the surface of the substrate (SUB) if the surface of the substrate (SUB) is not uniform. For example, the buffer layer (BFR) is silicon oxide (SiO₂). x ), silicon nitride (SiN x ), silicon oxynitride (SiO₂ x N y It may include inorganic insulating materials such as ). These can be used alone or in combination with each other. The buffer layer (BFR) may have a single-layer structure or a multilayer structure in which multiple layers are stacked.

[0083] An active pattern (ACT) may be disposed on the buffer layer (BFR). The active pattern (ACT) may include a metal oxide semiconductor, an inorganic semiconductor (e.g., amorphous silicon, poly silicon, etc.), or an organic semiconductor. The active pattern (ACT) may include a source region, a drain region, and a channel region located between the source region and the drain region.

[0084] For example, the metal oxide semiconductor is zinc oxide (e.g., ZnO or ZnO2) and gallium oxide (GaO2). x ), tin oxide (SnO x ), Indium oxide (InO x It may include indium gallium oxide (IGO), indium zinc oxide (IZO), indium tin oxide (ITO), indium zinc tin oxide (IZTO), indium gallium zinc oxide (IGZO), etc. These may be used alone or in combination with each other.

[0085] The gate insulating layer (GIL) may be disposed on the buffer layer (BFR). The gate insulating layer (GIL) may sufficiently cover the active pattern (ACT) and may have a substantially flat top surface without creating a step around the active pattern (ACT). Optionally, the gate insulating layer (GIL) may cover the active pattern (ACT) and be disposed along the profile of the active pattern (ACT) with a uniform thickness. For example, the gate insulating layer (GIL) may be silicon oxide (SiO₂). x ), silicon nitride (SiN x ), silicon carbide (SiC x ), silicon oxynitride (SiO₂ x N y ), silicon oxycarbide (SiO₂ x C y It may include inorganic insulating materials such as ). These can be used alone or in combination with each other. The gate insulating layer (GIL) may have a single-layer structure or a multilayer structure in which multiple layers are stacked.

[0086] The gate electrode (GAT) may be disposed on the gate insulating layer (GIL). The gate electrode (GAT) may overlap in a plane with the channel region of the active pattern (ACT). The gate electrode (GAT) may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. Examples of the metal include silver (Ag), molybdenum (Mo), aluminum (Al), tungsten (W), copper (Cu), nickel (Ni), chromium (Cr), titanium (Ti), tantalum (Ta), platinum (Pt), scandium (Sc), etc. Examples of the conductive metal oxide include indium tin oxide and indium zinc oxide. In addition, examples of the metal nitride include aluminum nitride (AlN x ), tungsten nitride (WN x ), chromium nitride (CrN xExamples include ) etc. These can be used individually or in combination with each other. The gate electrode (GAT) may have a single-layer structure or a multilayer structure in which multiple layers are stacked.

[0087] The interlayer insulating layer (ILD) may be disposed on the gate insulating layer (GIL). The interlayer insulating layer (ILD) may sufficiently cover the gate electrode (GAT) and may have a substantially flat top surface without creating a step around the gate electrode (GAT). Optionally, the interlayer insulating layer (ILD) may cover the gate electrode (GAT) and be disposed along the profile of the gate electrode (GAT) with a uniform thickness. For example, the interlayer insulating layer (ILD) may comprise inorganic materials such as silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon oxycarbide, etc. These may be used alone or in combination with each other. The interlayer insulating layer (ILD) may have a single-layer structure or a multilayer structure in which multiple layers are stacked.

[0088] A source electrode (SE) and a drain electrode (DE) may be disposed on the interlayer insulating layer (ILD). The source electrode (SE) may be connected to the source region of the active pattern (ACT) through a contact hole penetrating the gate insulating layer (GIL) and a first portion of the interlayer insulating layer (ILD), and the drain electrode (DE) may be connected to the drain region of the active pattern (ACT) through a contact hole penetrating the gate insulating layer (GIL) and a second portion of the interlayer insulating layer (ILD). For example, each of the source electrode (SE) and the drain electrode (DE) may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. These may be used alone or in combination with each other. Each of the source electrode (SE) and the drain electrode (DE) may have a single-layer structure or a multilayer structure in which a plurality of layers are stacked.

[0089] Accordingly, the transistor (TR), including the active pattern (ACT), the gate electrode (GAT), the source electrode (SE), and the drain electrode (DE), can be formed on a display area (DA) on a substrate (SUB).

[0090] The via insulating layer (VIA) may be disposed on the interlayer insulating layer (ILD). The via insulating layer (VIA) may sufficiently cover the source electrode (SE) and the drain electrode (DE). The via insulating layer (VIA) may include an organic insulating material. For example, the via insulating layer (VIA) may include organic insulating materials such as phenolic resin, polyacrylates resin, polyimide resin, polyamides resin, siloxane resin, epoxy resin, etc. These may be used alone or in combination with each other. The via insulating layer (VIA) may have a single-layer structure or a multilayer structure in which a plurality of layers are stacked.

[0091] The anode electrode (ADE) may be disposed on the via insulating layer (VIA). The anode electrode (ADE) may be connected to the drain electrode (DE) (or the source electrode (SE)) through a contact hole penetrating the via insulating layer (VIA). The anode electrode (ADE) may be a transparent electrode, a translucent electrode, or a reflective electrode.

[0092] For example, the anode electrode (ADE) may include metals, alloys, metal nitrides, conductive metal oxides, transparent conductive materials, etc. These may be used alone or in combination with each other. In one embodiment, the anode electrode (ADE) may have a laminated structure including ITO / Ag / ITO. However, embodiments of the present invention are not necessarily limited thereto.

[0093] The pixel defining film (PDL) may be disposed on the via insulating layer (VIA). The pixel defining film (PDL) may cover the edge of the anode electrode (ADE). Additionally, a pixel opening may be defined in the pixel defining film (PDL) that exposes at least a portion of the upper surface of the anode electrode (ADE). For example, the pixel defining film (PDL) may comprise an inorganic insulating material or an organic insulating material. In one embodiment, the pixel defining film (PDL) may comprise an organic insulating material such as an epoxy resin, a siloxane resin, etc. These may be used alone or in combination with each other. In another embodiment, the pixel defining film (PDL) may comprise an inorganic insulating material and / or an organic insulating material containing a light-blocking material such as a black pigment, a black dye, etc.

[0094] The light-emitting layer (EL) may be disposed on the anode electrode (ADE). Specifically, the light-emitting layer (EL) may be disposed at the pixel opening of the pixel defining film (PDL). The light-emitting layer (EL) may include a light-emitting material (e.g., an organic light-emitting material or an inorganic light-emitting material) that emits light of a preset color. For example, the light-emitting layer (EL) may include a light-emitting material that emits red light, green light, or blue light.

[0095] The cathode electrode (CTE) may be disposed on the pixel definition film (PDL) and the light-emitting layer (EL). The cathode electrode (CTE) may be a transmissive electrode, a semitransmissive electrode, or a reflective electrode. For example, the cathode electrode (CTE) may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. These may be used alone or in combination with each other. The cathode electrode (CTE) may have a single-layer structure or a multilayer structure in which a plurality of layers are stacked.

[0096] Accordingly, the light-emitting element (LED), comprising the anode electrode (ADE), the light-emitting layer (EL), and the cathode electrode (CTE), may be formed on the display area (DA) on the substrate (SUB). The light-emitting element (LED) may be electrically connected to the transistor (TR). Accordingly, the light-emitting element (LED) may receive a driving signal from the transistor (TR) and generate light based on the driving signal.

[0097] The encapsulation layer (ENC) may be disposed on the cathode electrode (CTE). In one embodiment, the encapsulation layer (ENC) may include a first inorganic encapsulation layer (IEL1), an organic encapsulation layer (OEL) disposed on the first inorganic encapsulation layer (IEL1), and a second inorganic encapsulation layer (IEL2) disposed on the organic encapsulation layer (OEL).

[0098] The first inorganic encapsulation layer (IEL1) may include a silicon compound. For example, the first inorganic encapsulation layer (IEL1) may be silicon oxide (SiO₂). x ), silicon nitride (SiNx), silicon oxynitride (SiO2 x N y It may include ) etc. These may be used alone or in combination with each other. In one embodiment, the first inorganic encapsulation layer (IEL1) may include silicon nitride (SiNx). However, embodiments of the present invention are not necessarily limited thereto.

[0099] In one embodiment, the refractive index of the first inorganic encapsulation layer (IEL1) may be about 1.88 or higher to about 1.90 or lower. Preferably, the refractive index of the first inorganic encapsulation layer (IEL1) may be about 1.89. However, embodiments of the present invention are not necessarily limited thereto.

[0100] For example, the first inorganic encapsulation layer (IEL1) may be formed through a plasma enhanced chemical vapor deposition (PECVD) process. However, embodiments of the present invention are not necessarily limited thereto.

[0101] The organic encapsulation layer (OEL) may have a substantially flat upper surface. For example, the organic encapsulation layer (OEL) may include a polymer cured material such as polyacrylate. However, the embodiments of the present invention are not necessarily limited thereto. For example, the organic encapsulation layer (OEL) may be formed by supplying an organic material through an inkjet printing process. However, the embodiments of the present invention are not necessarily limited thereto.

[0102] The second inorganic encapsulation layer (IEL2) may include a silicon compound. For example, the second inorganic encapsulation layer (IEL2) may be silicon oxide (SiO₂). x ), silicon nitride (SiN x ), silicon oxynitride (SiO₂ x N y It may include ) etc. These may be used alone or in combination with each other. In one embodiment, the second inorganic encapsulation layer (IEL2) is silicon nitride (SiN x It may include ).

[0103] For example, the second inorganic encapsulation layer (IEL2) may be formed through a plasma enhanced chemical vapor deposition (PECVD) process. However, embodiments of the present invention are not necessarily limited thereto.

[0104] In one embodiment, the second inorganic encapsulation layer (IEL2) is silicon nitride (SiN xWhen including ), the sum of the bonding ratio of Si-N and the bonding ratio of NH in the second inorganic encapsulation layer (IEL2) may be about 89% or less. Preferably, the sum of the bonding ratio of Si-N and the bonding ratio of NH in the second inorganic encapsulation layer (IEL2) may be about 80% or more and about 89% or less. At this time, the bonding ratio of Si-N in the second inorganic encapsulation layer (IEL2) may be about 85% or more and less than about 86%. In addition, the bonding ratio of Si-H in the second inorganic encapsulation layer (IEL2) may be about 11% or more and about 20% or less. Preferably, the bonding ratio of Si-H in the second inorganic encapsulation layer (IEL2) may be about 11% or more and about 12% or less.

[0105] The reaction gases used in the chemical vapor deposition process for forming the second inorganic encapsulation layer (IEL2) may include hydrogen (H2), nitrogen (N2), ammonia (NH3), and silane (SiH4). At this time, by controlling the flow rates of hydrogen (H2), nitrogen (N2), ammonia (NH3), and silane (SiH4), the bonding ratio of Si-N, the bonding ratio of NH, and the bonding ratio of Si-H in the second inorganic encapsulation layer (IEL2) can be controlled.

[0106] When the sum of the bonding ratio of Si-N and the bonding ratio of NH in the second inorganic encapsulation layer (IEL2) exceeds approximately 89%, the silicon nitride of the second inorganic encapsulation layer (IEL2) reacts with moisture due to external moisture penetration to produce ammonia (NH3), and the ammonia (NH3) can react with a carboxylic acid inside the first adhesive layer (ADL1) to produce ammonium ions (NH4+). The ammonium ions (NH4+) generated inside the first adhesive layer (ADL1) can move to the polarization layer (PL) of the polarizing film (POL). In this case, the polarization layer (PL) may become discolored. If the polarization layer (PL) becomes discolored, the performance, durability, lifespan, etc. of the polarizing film (POL) may be degraded.

[0107] Here, the Si-N bonding ratio of the second inorganic encapsulation layer (IEL2) refers to the ratio of Si elements bonded to N in the second inorganic encapsulation layer (IEL2), and the NH bonding ratio of the second inorganic encapsulation layer (IEL2) refers to the ratio of N elements bonded to H and H2 in the second inorganic encapsulation layer (IEL2). Additionally, the Si-H bonding ratio of the second inorganic encapsulation layer (IEL2) refers to the ratio of Si elements bonded to H in the second inorganic encapsulation layer (IEL2).

[0108] In one embodiment, the refractive index of the second inorganic encapsulation layer (IEL2) may be about 1.88 or higher to about 1.90 or lower. Preferably, the refractive index of the second inorganic encapsulation layer (IEL2) may be about 1.89. That is, the refractive index of the second inorganic encapsulation layer (IEL2) may be substantially the same as the refractive index of the first inorganic encapsulation layer (IEL1). However, the embodiments of the present invention are not necessarily limited thereto.

[0109] Figure 6 is a graph showing the Si-H bond ratio, Si-H bond ratio, and NH bond ratio of the second inorganic encapsulation layer according to the comparative example and the embodiment.

[0110] Referring to FIGS. 5 and 6, in the comparative example, the second inorganic encapsulation layer (IEL2) was formed using silicon nitride. The refractive index of the second inorganic encapsulation layer (IEL2) was measured to be approximately 1.86. In addition, at the center of the second inorganic encapsulation layer (IEL2), the Si-N bonding ratio was measured to be approximately 86.68%, the Si-H bonding ratio to be approximately 9.47%, and the NH bonding ratio to be approximately 3.85%. At the edge of the second inorganic encapsulation layer (IEL2), the Si-N bonding ratio was measured to be approximately 86.01%, the Si-H bonding ratio to be approximately 10.11%, and the NH bonding ratio to be approximately 3.88%.

[0111] In the example, the second inorganic encapsulation layer (IEL2) was formed using silicon nitride. The refractive index of the second inorganic encapsulation layer (IEL2) was measured to be approximately 1.89. Additionally, at the center of the second inorganic encapsulation layer (IEL2), the Si-N bonding ratio was measured to be approximately 85.03%, the Si-H bonding ratio to be approximately 11.21%, and the NH bonding ratio to be approximately 3.75%. At the edge of the second inorganic encapsulation layer (IEL2), the Si-N bonding ratio was measured to be approximately 85.01%, the Si-H bonding ratio to be approximately 11.18%, and the NH bonding ratio to be approximately 3.81%.

[0112] The bonding ratio inside the second inorganic encapsulation layer (IEL2) containing silicon nitride was measured using FT-IR (Fourier Transform Infrared Spectrometer).

[0113] As a result, it can be seen that when the sum of the bonding ratio of Si-N and the bonding ratio of NH in the second inorganic encapsulation layer (IEL2) containing silicon nitride is in contact with the first adhesive layer (ADL1) that attaches the polarizing film (POL) and the encapsulation layer (ENC), the polarizing film (POL) discolors due to external moisture permeability. On the other hand, when the sum of the bonding ratio of Si-N and the bonding ratio of NH in the second inorganic encapsulation layer (IEL2) containing silicon nitride is in contact with the first adhesive layer (ADL1) that attaches the polarizing film (POL) and the encapsulation layer (ENC), the polarizing film (POL) discolors due to external moisture permeability can be minimized or prevented.

[0114] Figure 7 is a cross-sectional view showing another example of area A of Figure 2.

[0115] Referring to FIGS. 2 and FIGS. 7, the display device (DD) may include the display panel (DP), the polarizing film (POL), the second adhesive layer (ADL2), and the window member (WN). The display panel (DP) may include the substrate (SUB), the circuit layer (DP-CL), the light-emitting element layer (DP-EL), and the encapsulation layer (ENC). Here, the circuit layer (DP-CL) may include the buffer layer (BFR), the transistor (TR), the gate insulating layer (GIL), the interlayer insulating layer (ILD), and the via insulating layer (VIA), and the light-emitting element layer (DP-EL) may include the pixel defining film (PDL) and the light-emitting element (LED).

[0116] However, the display device (DD) described with reference to FIG. 7 may be substantially the same or similar as the display device (DD) described with reference to FIG. 5, except that it further includes an anti-oxidation layer (OPL). In the following, redundant descriptions are omitted or simplified.

[0117] The above encapsulation layer (ENC) may include the first inorganic encapsulation layer (IEL1), the organic encapsulation layer (OEL) disposed on the first inorganic encapsulation layer (IEL1), and the second inorganic encapsulation layer (IEL2) disposed on the organic encapsulation layer (OEL).

[0118] For example, the first inorganic encapsulation layer (IEL1) is silicon oxide (SiO₂). x ), silicon nitride (SiNx), silicon oxynitride (SiO2 x N y It may include ) etc. These may be used alone or in combination with each other. In one embodiment, the first inorganic encapsulation layer (IEL1) may include silicon nitride (SiNx). However, embodiments of the present invention are not necessarily limited thereto.

[0119] For example, the second inorganic encapsulation layer (IEL2) is silicon oxide (SiO₂). x ), silicon nitride (SiNx), silicon oxynitride (SiO2 x N y It may include ) etc. These may be used alone or in combination with each other. In one embodiment, the second inorganic encapsulation layer (IEL2) may include silicon nitride (SiNx).

[0120] In one embodiment, the second inorganic encapsulation layer (IEL2) is silicon nitride (SiN xWhen including ), the sum of the bonding ratio of Si-N and the bonding ratio of NH in the second inorganic encapsulation layer (IEL2) may be about 89% or less. At this time, the bonding ratio of Si-N in the second inorganic encapsulation layer (IEL2) may be about 85% or more and less than about 86%. In addition, the bonding ratio of Si-H in the second inorganic encapsulation layer (IEL2) may be about 11% or more and about 20% or less. However, the embodiments of the present invention are not necessarily limited thereto, and the display device (DD) satisfies the embodiment of FIG. 7 and the second inorganic encapsulation layer (IEL2) is silicon nitride (SiN x In the case of including ), the bonding ratio of Si-N, the bonding ratio of NH, and the bonding ratio of Si-H in the second inorganic encapsulation layer (IEL2) may not satisfy the ranges described above.

[0121] In one embodiment, the display device (DD) may further include an anti-oxidation layer (OPL) comprising an insulating material, disposed between the encapsulation layer (ENC) and the first adhesive layer (ADL1). Specifically, the anti-oxidation layer (OPL) may be disposed between the second inorganic encapsulation layer (IEL2) and the first adhesive layer (ADL1). That is, the anti-oxidation layer (OPL) may be in direct contact with the second inorganic encapsulation layer (IEL2) and may be in direct contact with the first adhesive layer (ADL1). In this case, the second inorganic encapsulation layer (IEL2) may not be in direct contact with the first adhesive layer (ADL1). Accordingly, the generation of ammonium ions (NH4+) inside the first adhesive layer (ADL1) due to external moisture permeability may be suppressed. In this case, the polarizing film (POL) may not discolor due to external moisture permeability.

[0122] In one embodiment, the antioxidant layer (OPL) may include an organic material. In another embodiment, the antioxidant layer (OPL) is silicon oxide (SiO₂). xIt may also include ).

[0123] FIG. 8 is a block diagram showing an electronic device according to embodiments of the present invention.

[0124] Referring to FIG. 8, an electronic device (10) according to embodiments of the present invention may include a display module (11), a processor (12), a memory (13), and a power module (14).

[0125] A display device according to embodiments of the present invention (e.g., the display device (DD) of FIG. 1) can be applied to various electronic devices. The electronic device (10) includes the display device described above and may further include a module or device having additional functions in addition to the display device.

[0126] The above processor (12) may include at least one of a central processing unit (CPU), an application processor (AP), a graphic processing unit (GPU), a communication processor (CP), and an image signal processor (ISP).

[0127] The memory (15) may store data information necessary for the operation of the processor (12) or the display module (11). When the processor (12) executes an application stored in the memory (15), a video data signal and / or an input control signal are transmitted to the display module (11), and the display module (11) can process the received signal and output video information through a display screen.

[0128] The power module (14) may include a power supply module that supplies external power, such as a power adapter or battery device, and a power conversion module that converts the external power supplied by the power supply module to generate a power voltage (e.g., ELVDD and ELVSS in FIG. 4) required for the operation of the electronic device (10). That is, the power voltage generated by the power conversion module may be provided to a display area (e.g., the display area (DA) in FIG. 1).

[0129] At least one of each component of the electronic device (10) described above may be included within the display device according to the embodiments described above. Additionally, some of the individual modules functionally included within a single module may be included within the display device, while others may be provided separately from the display device. For example, the display device may include the display module (11), and the processor (12), the memory (13), and the power module (14) may be provided in the form of other devices within the electronic device (10) other than the display device.

[0130] FIG. 9 is a schematic diagram showing an electronic device according to various embodiments.

[0131] Referring to FIGS. 8 and 9, the various electronic devices (10) to which the display device according to the embodiments is applied may include not only image display electronic devices such as a smartphone (10_1a), a tablet PC (10_1b), a laptop (10_1c), a TV (10_1d), and a desk monitor (10_1e), but also wearable electronic devices including display modules such as smart glasses (10_2a), a head-mounted display (10_2b), and a smart watch (10_2c), and automotive electronic devices (10_3) including display modules such as a CID (Center Information Display) and a room mirror display placed on the instrument panel, center fascia, and dashboard of a car.

[0132] Although the foregoing description refers to exemplary embodiments of the present invention, those skilled in the art will understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the invention as set forth in the following claims. Industrial applicability

[0133] The present invention can be applied to various display devices that may be equipped with a display device. For example, the present invention can be applied to high-resolution smartphones, mobile phones, smartpads, smartwatches, tablet PCs, vehicle navigation systems, televisions, computer monitors, laptops, etc. Explanation of the symbols

[0134] DD: Display device DA: Display area PA: Surrounding area DP: Display Panel SUB: Substrate DP-CL: Circuit layer DP-EL: Light-emitting diode layer ENC: Encapsulation layer IEL1: First weapon bag layer OEL: Organic bag layer IEL2: Second weapon sealing layer POL: Polarizing film ADL1: First adhesive layer PHL: Phase Delay Layer PRL: Protective layer PL: Polarization layer OF: Hard coating layer ADL2: 1st adhesive layer WN: Window missing OPL: Antioxidant layer

Claims

Claim 1 A light-emitting element layer disposed in a display area on a substrate; and disposed on the light-emitting element layer, First inorganic encapsulation layer; An organic encapsulation layer disposed on the first inorganic encapsulation layer; and Silicon nitride (SiN) disposed on the above organic encapsulation layer, wherein the sum of the bonding ratio of Si-N and the bonding ratio of NH is 89% or less x A display device comprising: a sealing layer including a second inorganic sealing layer including ); and a polarizing film disposed on the sealing layer. Claim 2 A display device according to claim 1, characterized in that the Si-N bonding ratio of the second inorganic encapsulation layer is 85% or more and less than 86%. Claim 3 A display device according to claim 1, characterized in that the Si-H bond ratio of the second inorganic encapsulation layer is 11% or more and 12% or less. Claim 4 A display device characterized in that, in claim 1, the refractive index of the second inorganic encapsulation layer is 1.88 or higher and 1.90 or lower. Claim 5 A display device according to claim 1, characterized in that the refractive index of the first inorganic encapsulation layer and the refractive index of the second inorganic encapsulation layer are substantially the same. Claim 6 A display device according to claim 1, wherein the polarizing film comprises: a phase delay layer disposed on the encapsulation layer; an adhesive layer disposed between the encapsulation layer and the phase delay layer and adhering the encapsulation layer and the phase delay layer; a protective layer disposed on the phase delay layer; and a polarizing layer disposed on the protective layer. Claim 7 A display device according to claim 6, characterized in that the adhesive layer comprises a pressure-sensitive adhesive (PSA). Claim 8 A display device according to claim 7, characterized in that the pressure-sensitive adhesive comprises an acrylic resin having acrylic acid as a main component. Claim 9 A display device according to claim 6, characterized in that the protective layer comprises triacetyl cellulose (TAC). Claim 10 A display device according to claim 6, characterized in that the polarizing layer comprises polyvinyl alcohol (PVA). Claim 11 A display device according to claim 1, characterized in that the second inorganic encapsulation layer of the encapsulation layer does not come into direct contact with the polarizing film. Claim 12 A display device according to claim 11, further comprising an anti-oxidation layer disposed between the encapsulation layer and the polarizing film and comprising an insulating material. Claim 13 A display device characterized in that, in claim 12, the antioxidant layer comprises an organic material. Claim 14 In claim 12, the antioxidant layer is silicon oxide (SiO₂). x A display device characterized by including ). Claim 15 A display device according to claim 1, characterized in that the first inorganic encapsulation layer comprises silicon nitride. Claim 16 A light-emitting element layer disposed in a display area on a substrate; disposed on the above-mentioned light-emitting element layer, and First inorganic encapsulation layer; An organic encapsulation layer disposed on the first inorganic encapsulation layer; and Silicon nitride (SiN) disposed on the above organic encapsulation layer, wherein the sum of the bonding ratio of Si-N and the bonding ratio of NH is 89% or less x A packaging layer comprising a second inorganic packaging layer including ); and An electronic device comprising: a display device including a polarizing film disposed on the above-mentioned encapsulation layer; and a power module including a power supply module that supplies external power and a power conversion module that converts the external power supplied by the power supply module to generate a power voltage provided to the display area. Claim 17 An electronic device according to claim 16, characterized in that the Si-N bonding ratio of the second inorganic encapsulation layer is 85% or more and less than 86%. Claim 18 An electronic device according to claim 16, characterized in that the Si-H bond ratio of the second inorganic encapsulation layer is 11% or more and 12% or less. Claim 19 An electronic device characterized in that, in claim 16, the refractive index of the second inorganic encapsulation layer is 1.88 or higher and 1.90 or lower. Claim 20 An electronic device according to claim 16, wherein the polarizing film comprises: a phase delay layer disposed on the encapsulation layer; an adhesive layer disposed between the encapsulation layer and the phase delay layer and adhering the encapsulation layer and the phase delay layer; a protective layer disposed on the phase delay layer; and a polarizing layer disposed on the protective layer.

Images