Apparatus for manufacturing cover window, method for manufacturing cover window, and electronic device including cover wndow

Abstract

An apparatus for manufacturing a cover window, a method for manufacturing a cover window, and an electronic device including a cover window are provided. The apparatus for manufacturing a cover window comprises a light source for outputting a raw laser beam, a beam splitter for splitting the raw laser beam into a main beam and at least one sub-beam, a first phase mask for diffracting the main beam to convert the shape of the main beam into a straight beam, a second phase mask for diffracting the sub-beam to convert the shape of the sub-beam into a dotted line beam including a plurality of spot beams, a beam combining unit for combining the main beam and the sub-beam to form a combined beam, and an objective lens for focusing the combined beam into a focal plane, wherein the extension direction of the polarization axis of the main beam and the polarization axis of the sub-beam are different.

Description

Technology Field

[0001] The present invention relates to an apparatus for manufacturing a cover window, a method for manufacturing a cover window, and an electronic device including a cover window. Background Technology

[0002] As the information society develops, the demand for display devices for displaying images is increasing in various forms. Display devices may be liquid crystal displays, field emission displays, light-emitting displays, etc. Light-emitting displays may include organic light-emitting displays that include organic light-emitting diode elements as light-emitting elements, or inorganic light-emitting displays that include inorganic light-emitting diode elements as light-emitting elements.

[0003] To improve the mechanical strength of a cover window included in or attached to a display device, a process of machining the sides of the cover window with a CNC (computer numerical control) grinding device and wet etching is performed. However, there is a disadvantage that the manufacturing cost of the cover window is high due to defects such as wedges and chipping occurring on the sides of the cover window during the CNC process. The problem to be solved

[0004] The problem that the present invention aims to solve is to provide a manufacturing apparatus for a cover window and a method for manufacturing a cover window that can lower manufacturing costs without reducing mechanical strength.

[0005] The problem that the present invention aims to solve is to provide an electronic device including a cover window that can lower manufacturing costs without reducing mechanical strength.

[0006] The problems of the present invention are not limited to those mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0007] A manufacturing apparatus for a cover window according to one embodiment for solving the above problem comprises a light source that outputs a raw laser beam, a beam splitter that splits the raw laser beam into a main beam and at least one sub-beam, a first phase mask that diffracts the main beam to convert the shape of the main beam into a straight beam, a second phase mask that diffracts the sub-beam to convert the shape of the sub-beam into a dotted line beam including a plurality of spot beams, a beam combining unit that combines the main beam and the sub-beam to form a combined beam, and an objective lens that focuses the combined beam into a focal plane, wherein the extension direction of the polarization axis of the main beam and the polarization axis of the sub-beam are different.

[0008] The polarization axis of the main beam and the polarization axis of the sub-beam can be orthogonal to each other.

[0009] The apparatus further includes an optical delayer positioned between the beam splitter and the first phase mask and between the beam splitter and the second phase mask, wherein the optical delayer can delay the time for either the main beam or the sub-beam to arrive at the beam coupling portion.

[0010] The time delay range of the above optical delayer may be 1 ps to 10 ps.

[0011] The first phase mask may have a shape in which concentric circles having the same center are arranged radially, and the second phase mask may have a shape in which concentric circles having at least two different centers are arranged radially.

[0012] The at least two centers of the second phase mask include a first center and a second center, and the concentric circles having the first center and the concentric circles having the second center may be in a shape that is symmetrically divided left and right with respect to a first straight line extending in one direction.

[0013] The main beam and the sub-beam, respectively transformed by the first phase mask and the second phase mask, may have a Bessel beam shape.

[0014] The above-mentioned raw laser beam may be a Gaussian-shaped beam.

[0015] The numerical aperture of the above objective lens may be 0.4 or greater.

[0016] In the above focal plane, the main beam and the sub-beam may be spaced apart in a first direction.

[0017] In the above focal plane, the main beam and the sub-beam may extend in a second direction different from the first direction.

[0018] The above sub-beams may each extend in the second direction and include a plurality of spot beams spaced apart from each other in the second direction.

[0019] In the second direction above, the focal depth of the main beam may be greater than the focal depth of each of the plurality of spot beams.

[0020] The width of the main beam in the first direction and the width of the main beam in the first direction may be 1 μm or less.

[0021] The aspect ratio of the sub-beam is defined as the depth of focus in the second direction relative to the width in the first direction, and the aspect ratio of the sub-beam may be 20 or more.

[0022] The beam intensity of the above sub-beam may be 30% to 80% of the beam intensity of the above main beam.

[0023] A method for manufacturing a cover window according to one embodiment for solving the above problem comprises the steps of irradiating a source glass with a laser beam to form a sketch line for forming a cover window, and etching the cover window using an etching solution, wherein the sketch line includes a first sketch line and a second sketch line disposed inside the first sketch line, and the cover window is separated from the source glass by the first sketch line, and the etching solution penetrates into the interior of the cover window through the second sketch line.

[0024] The first sketch line penetrates the original glass in the thickness direction, and the second sketch line extends from the upper and lower surfaces of the original glass in the internal direction of the original glass, wherein the length of the second sketch line may be smaller than the thickness of the original glass.

[0025] The above sketch line includes a third sketch line positioned inside the second sketch line, and the length of the third sketch line may be shorter than the length of the second sketch line.

[0026] An electronic device according to one embodiment for solving the above problem comprises a cover window manufactured by a manufacturing device for the cover window, a display device including a display panel disposed below the cover window, a processor providing a driving signal to the display device, and a power module supplying power to the display device. Effects of the invention

[0027] According to the manufacturing apparatus and method for a cover window according to one embodiment of the present invention, a cover window can be manufactured that can reduce manufacturing costs without reducing mechanical strength.

[0028] According to an electronic device according to one embodiment of the present invention, it may include a cover window that can lower manufacturing costs without reducing mechanical strength.

[0029] The effects according to the embodiments are not limited to those exemplified above, and a wider variety of effects are included in this specification. Brief explanation of the drawing

[0030] FIG. 1 is a schematic perspective view showing an electronic device according to one embodiment. FIG. 2 is a perspective view showing a display device included in an electronic device according to one embodiment. FIG. 3 is a block diagram showing a display device according to one embodiment. FIG. 4 is an equivalent circuit diagram showing a pixel of a display device according to one embodiment. FIGS. 5 and FIGS. 6 are cross-sectional views showing a display device according to one embodiment. FIG. 7 is a cross-sectional view showing a cross-section of a display area of ​​a display device according to one embodiment. FIG. 8 is a front perspective view showing a cover window according to one embodiment. FIG. 9 is a rear perspective view showing a cover window according to one embodiment. FIG. 10 is a plan view showing a cover window according to one embodiment. Figure 11 is a cross-sectional view taken along X1-X1' of Figure 10. FIG. 12 is a flowchart illustrating a method for manufacturing a cover window according to one embodiment. FIGS. 13 and FIGS. 14 are perspective views showing step S110 of FIG. 12. FIG. 15 is a cross-sectional view showing step S120 of FIG. 12. FIGS. 16 and FIGS. 17 are cross-sectional views showing step S110 of FIG. 12. Figure 18 is an enlarged view of area A of Figure 15. FIGS. 19 and 20 are cross-sectional views illustrating step S110_1 of a method for manufacturing a cover window according to another embodiment. FIG. 21 is a cross-sectional view showing step S120_1 of a method for manufacturing a cover window according to another embodiment. FIG. 22 is a side schematic diagram showing a manufacturing apparatus for a cover window according to one embodiment. FIG. 23 is a plan view showing the diffraction pattern of the first phase mask in the XY plane. FIG. 24 is a plan view showing the diffraction pattern of the second phase mask in the XY plane. FIG. 25a is a photograph showing the two-dimensional shape of the main beam and sub-beams in the XY plane formed by a cover window manufacturing device according to one embodiment. FIG. 25b is a photograph showing the two-dimensional shape of the main beam and sub-beams in the XY plane formed by the cover window manufacturing device according to the comparative example. FIG. 26a is a photograph showing the two-dimensional shape of the main beam and sub-beams in the YZ plane formed by a cover window manufacturing device according to one embodiment. FIG. 26b is a photograph showing the two-dimensional shape of the main beam and sub-beams in the YZ plane formed by the cover window manufacturing device according to the comparative example. Figure 27 is a graph showing the beam intensity of the main beam and sub-beams according to the Z-axis position. FIG. 28 is a schematic diagram showing sketch lines formed on the original glass by the main beam and sub-beams. FIG. 29 is a block diagram of an electronic device according to one embodiment. FIG. 30 is a schematic diagram of an electronic device according to various embodiments. Specific details for implementing the invention

[0031] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0032] When an element or layer is referred to as being "on" another element or layer, it includes cases where another layer or element is interposed directly above or in between. Likewise, when referred to as "below," "left," and "right," it includes cases where they are interposed immediately adjacent to another element or where another layer or material is interposed in between. Throughout the specification, the same reference numerals refer to the same components.

[0033] Although terms such as "first," "second," etc., are used to describe various components, it goes without saying that these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may also be the second component within the technical scope of the present invention.

[0034] The features of each of the various embodiments of the present invention may be combined or combined with one another, either partially or wholly, and may technically enable various interlocking and operation. Each embodiment may be implemented independently of one another or may be implemented together in an associated relationship.

[0035] Specific embodiments will be described below with reference to the attached drawings.

[0036] FIG. 1 is a schematic perspective view showing an electronic device according to one embodiment.

[0037] Referring to FIG. 1, the electronic device (1) displays a video or a still image. The electronic device (1) may refer to any electronic device that provides a display screen. For example, a television, laptop, monitor, billboard, Internet of Things, mobile phone, smartphone, tablet PC (Personal Computer), electronic watch, smart watch, watch phone, head-mounted display, mobile communication terminal, electronic notebook, electronic book, PMP (Portable Multimedia Player), navigation, game console, digital camera, camcorder, etc. that provide a display screen may be included in the electronic device (1).

[0038] The electronic device (1) may include a display device (10) (see FIG. 2) that provides a display screen. Examples of display devices include an inorganic light-emitting diode display device, an organic light-emitting diode display device, a quantum dot light-emitting display device, a plasma display device, a field emission display device, etc. Below, an example of a display device is given in which an organic light-emitting diode display device is applied, but it is not limited thereto, and if the same technical concept is applicable, it can be applied to other display devices.

[0039] The shape of the electronic device (1) can be varied in many ways. For example, the electronic device (1) may have a shape such as a horizontally elongated rectangle, a vertically elongated rectangle, a square, a square with rounded corners (vertices), other polygons, or a circle. The shape of the display area (DA) of the electronic device (1) may also be similar to the overall shape of the electronic device (1). In FIG. 1, an example of an electronic device (1) with a rectangular shape in which the length of the second direction (DR2) is longer than the length of the first direction (DR1) is shown.

[0040] In the illustrated drawing, the first direction (DR1) and the second direction (DR2) each intersect each other as horizontal directions. For example, the first direction (DR1) and the second direction (DR2) may be mutually orthogonal. Additionally, the third direction (DR3) intersects the first direction (DR1) and the second direction (DR2), and may be, for example, an orthogonal vertical direction. Unless otherwise defined, in this specification, the direction indicated by the arrows of the first to third directions (DR1, DR2, DR3) may be referred to as one side, and the opposite direction may be referred to as the other side. Furthermore, in this specification, “up,” “upper side,” “top,” “top,” and “upper surface” refer to the direction in which the arrow of the drawing points among the third direction (DR3) based on the drawing, and “lower,” “lower side,” “lower,” “bottom,” and “lower surface” refer to the direction opposite to the direction in which the arrow of the third direction (DR3) points based on the drawing.

[0041] The electronic device (1) may include a display area (DA) and a non-display area (NDA). The display area (DA) is an area where a screen can be displayed, and the non-display area (NDA) is an area where a screen is not displayed. The display area (DA) may also be referred to as an active area, and the non-display area (NDA) as an inactive area. The display area (DA) may generally occupy the center of the electronic device (1).

[0042] FIG. 2 is a perspective view showing a display device included in an electronic device according to one embodiment.

[0043] Referring to FIG. 2 in addition to FIG. 1, an electronic device (1) according to one embodiment may include a display device (10). The display device (10) may provide a screen displayed on the electronic device (1). The display device (10) may have a planar shape similar to that of the electronic device (1). For example, the display device (10) may have a shape similar to a rectangle having a short side in a first direction (DR1) and a long side in a second direction (DR2). The corner where the short side in the first direction (DR1) and the long side in the second direction (DR2) meet may be formed rounded to have curvature, but is not limited thereto and may be formed at a right angle. The planar shape of the display device (10) is not limited to a rectangle and may be formed similarly to other polygons, circles, or ellipses.

[0044] The display device (10) may include a cover window (CW), a display panel (100), a driving circuit (200), a circuit board (300), a touch driving unit (400), and a power supply unit (500).

[0045] The display panel (100) may include a main area (MA) and a sub-area (SBA).

[0046] A main area (MA) may include a display area (DA) containing pixels that display an image, and a non-display area (NDA) disposed around the display area (DA). The display area (DA) may be placed in the center of the main area (MA), and the non-display area (NDA) may surround the display area (DA). The display area (DA) may emit light from a plurality of light-emitting areas or a plurality of aperture areas. For example, a display panel (100) may include a pixel circuit including switching elements, a pixel defining film defining a light-emitting area or an aperture area, and a self-light-emitting element.

[0047] For example, the self-luminous device may include at least one of an organic light-emitting diode (OLED) including an organic light-emitting layer, a quantum dot light-emitting diode (QLED) including a quantum dot light-emitting layer, an inorganic light-emitting diode (Inorganic LED) including an inorganic semiconductor, and a micro light-emitting diode (Micro LED), but is not limited thereto.

[0048] The non-display area (NDA) may be an outer area of ​​the display area (DA). The non-display area (NDA) may be defined as an edge area of ​​the main area (MA) of the display panel (100). The non-display area (NDA) may include a gate driver that supplies gate signals to gate lines, and fan-out lines connecting the driving circuit (200) and the display area (DA).

[0049] The sub-region (SBA) may be an area extending from one side of the main area (MA). The sub-region (SBA) may include a flexible material capable of bending, folding, rolling, etc. For example, when the sub-region (SBA) is bent, the sub-region (SBA) may overlap with the main area (MA) in the thickness direction (e.g., the third direction (DR3)). The sub-region (SBA) may include a pad portion connected to the driving circuit (200) and the circuit board (300).

[0050] In another embodiment, the sub-region (SBA) may be omitted, and the driving circuit (200) and the pad portion may be placed in the non-display area (NDA). In this case, the circuit board (300) may be bent instead of the sub-region (SBA), as shown in FIG. 6 described later.

[0051] The driving circuit (200) can output signals and voltages for driving the display panel (100). The driving circuit (200) can supply data voltages to the data lines. The driving circuit (200) supplies power voltage to the power lines and can supply a gate control signal to the gate driver.

[0052] The driving circuit (200) can be formed as an integrated circuit (IC) and mounted on the display panel (100) using a Chip on Glass (COG) method, a Chip on Plastic (COP) method, or an ultrasonic bonding method. For example, the driving circuit (200) can be placed in a sub-region (SBA) and can be overlapped in the thickness direction with the main area (MA) by bending the sub-region (SBA). As another example, the driving circuit (200) can be mounted on a circuit board (300).

[0053] The circuit board (300) can be attached to the pad portion of the display panel (100) using an anisotropic conductive film (ACF). The lead lines of the circuit board (300) can be electrically connected to the pad portion of the display panel (100). The circuit board (300) may be a flexible film such as a flexible printed circuit board, a printed circuit board, or a chip-on-film.

[0054] The touch driving unit (400) may be mounted on the circuit board (300). The touch driving unit (400) may be connected to the touch sensing unit of the display panel (100). The touch driving unit (400) may supply a touch driving signal to a plurality of touch electrodes of the touch sensing unit and sense the amount of change in capacitance between the plurality of touch electrodes. For example, the touch driving signal may be a pulse signal having a predetermined frequency. The touch driving unit (400) may calculate whether an input has occurred and the input coordinates based on the amount of change in capacitance between the plurality of touch electrodes. The touch driving unit (400) may be formed as an integrated circuit (IC).

[0055] The power supply unit (500) is positioned on the circuit board (300) and can supply power voltage to the driving circuit (200) and the display panel (100). The power supply unit (500) can generate a driving voltage and supply it to the driving voltage line, and generate a common voltage and supply it to the common electrode. For example, the driving voltage may be a high potential voltage for driving the light-emitting element, and the common voltage may be a low potential voltage for driving the light-emitting element. The power supply unit (500) can generate an initialization voltage and supply it to the initialization voltage line, generate a reference voltage and supply it to the reference voltage line, generate a bias voltage and supply it to the bias voltage line, and generate a reset voltage and supply it to the reset voltage line.

[0056] A cover window (CW) may be placed on the front surface of the display panel (100) to protect the front surface of the display panel (100) from external impacts. The cover window (CW) may be made of a transparent material. For example, the cover window (CW) may be glass. In this case, in order for the cover window (CW) to have a foldable flexible characteristic, the thickness of the cover window (CW) may be ultra-thin glass (UTG) of approximately 500 μm or less.

[0057] FIG. 3 is a block diagram showing a display device according to one embodiment.

[0058] Referring to FIG. 3, a display device (10) according to one embodiment may include a display panel (100), a scan driving circuit unit (SDC), a driving circuit (200), and a power supply unit (500).

[0059] The display panel (100) includes data lines (DL), scan lines (SL), and pixels (PX). The scan lines (SL) extend in a first direction (DR1) and may be arranged in a second direction (DR2). The data lines (DL) extend in a second direction (DR2) and may be arranged in a first direction (DR1).

[0060] Each pixel (PX) may be connected to at least one of the data lines (DL) and at least one of the scan lines (SL). Each pixel (PX) may include a pixel circuit (PXC) (see FIG. 4) comprising a light emitting element (LE) (see FIG. 4) and a plurality of transistors for supplying driving current to the light emitting element (LE) (see FIG. 4), as shown in FIG. 4. A detailed description of the pixel (PX) will be provided later in conjunction with FIG. 4.

[0061] The scan driving circuit (SDC) and the driving circuit (200) may be referred to as the display panel driving circuit. The driving circuit (200) may include a timing control circuit (TIC) and a data driving circuit (DIC).

[0062] The scan driving circuit (SDC) is connected to the scan lines (SL) and applies scan signals. The scan driving circuit (SDC) can generate scan signals according to the scan timing control signal (SCS) input from the timing control circuit (TIC) and output them to the scan lines (SL).

[0063] The scan driving circuit (SDC) may include a plurality of transistors. In some embodiments, the scan driving circuit (SDC) may be placed in a non-display area (NDA) located on the left side of the display panel (100). However, it is not limited thereto, and the scan driving circuit (SDC) may be placed in a non-display area (NDA) located on the right or left side of the display panel (100).

[0064] The data driving circuit (DIC) is connected to the data lines (DL) to supply data voltages. The data driving circuit (DIC) can receive digital video data (DATA) and a data timing control signal (DCS) from the timing control circuit (TIC). The data driving circuit (DIC) can convert the digital video data (DATA) into data voltages according to the data timing control signal (DCS) and output them to the data lines (DL).

[0065] The timing control circuit (TIC) can receive digital video data (DATA) and timing signals (TS). The timing signals (TS) may include a vertical sync signal, a horizontal sync signal, a data enable signal, a clock signal such as a dot clock, etc.

[0066] The timing control circuit (TIC) can generate control signals to control the operation timing of the data driving circuit (DIC) and the scan driving circuit (SDC). The control signals may include a data timing control signal (DCS) for controlling the operation timing of the data driving circuit (DIC) and a scan timing control signal (SCS) for controlling the operation timing of the scan driving circuit (SDC).

[0067] The timing control circuit (TIC) can output digital video data (DATA) and a data timing control signal (DCS) to the data driving circuit (DIC), and output a scan timing control signal (SCS) to the scan driving circuit (SDC).

[0068] The power supply unit (500) can generate a first power supply voltage (VSS) corresponding to a low potential voltage and a second power supply voltage (VDD) corresponding to a high potential voltage from a main power supply applied from the outside. In addition, the power supply unit (500) can supply various driving voltages to the data driving circuit unit (DIC), the scan driving circuit unit (SDC), and the timing control circuit unit (TIC).

[0069] FIG. 4 is an equivalent circuit diagram showing a pixel of a display device according to one embodiment.

[0070] Referring to FIG. 4, a pixel (PX) according to one embodiment may include a pixel circuit (PXC) and a light-emitting element (LE).

[0071] The light-emitting element (LE) emits light according to the driving current (Ids). The amount of light emitted by the light-emitting element (LE) can be proportional to the driving current (Ids).

[0072] The light-emitting element (LE) may be an organic light-emitting element comprising an anode electrode, a cathode electrode, and an organic light-emitting layer disposed between the anode electrode and the cathode electrode. Alternatively, the light-emitting element (LE) may be an inorganic light-emitting element comprising an anode electrode, a cathode electrode, and an inorganic semiconductor disposed between the anode electrode and the cathode electrode.

[0073] The anode electrode of the light-emitting element (LE) is connected to the first electrode of the fourth transistor (ST4) and the second electrode of the sixth transistor (ST6), and the cathode electrode can be connected to the first power line (VSL). A parasitic capacitance (Cel) may be formed between the anode electrode and the cathode electrode of the light-emitting element (LE).

[0074] The pixel circuit (PXC) includes a driving transistor (DT), switching elements, and a capacitor (C1). The switching elements include first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6).

[0075] The driving transistor (DT) includes a gate electrode, a first electrode, and a second electrode. The driving transistor (DT) controls a driving current flowing between the first electrode and the second electrode according to a data voltage applied to the gate electrode.

[0076] A capacitor (C1) is formed between the second electrode of the driving transistor (DT) and the second power line (VSL). One electrode of the capacitor (C1) is connected to the second electrode of the driving transistor (DT), and the other electrode can be connected to the second power line (VSL).

[0077] If the first electrode of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) is a source electrode, the second electrode may be a drain electrode. Alternatively, if the first electrode of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) is a drain electrode, the second electrode may be a source electrode.

[0078] The active layer of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) may be formed of any one of polysilicon, amorphous silicon, and oxide semiconductor. When the semiconductor layer of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) is formed of polysilicon, the process for forming it may be a low-temperature polysilicon (LTPS) process.

[0079] In addition, Figure 4 describes the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) as being formed as p-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), but is not limited thereto and may be formed as n-type MOSFETs.

[0080] Furthermore, the first power supply voltage (VSS) of the first power line (VSL), the second power supply voltage (VDD) of the second power line (VDL), and the third power supply voltage (or initialization voltage) of the third power line (VIL) can be set by considering the characteristics of the driving transistor (DT), the characteristics of the light-emitting element (LE), etc.

[0081] The pixel (PX) according to the embodiment of the present specification is not limited to that shown in FIG. 4. The pixel (PX) according to the embodiment of the present specification may have other known circuit structures that can be employed by those skilled in the art in addition to the embodiment shown in FIG. 4.

[0082] FIGS. 5 and FIGS. 6 are cross-sectional views illustrating a display device according to one embodiment. FIG. 5 shows a circuit board (300) in an unfolded state, and FIG. 6 shows a circuit board (300) in a bent state.

[0083] Referring to FIGS. 5 and 6, a display device (10) according to one embodiment may include a display panel (100), a polarizing film (PF), a cover window (CW), and a panel lower cover (PB). The display panel (100) may include a substrate (SUB), a display layer (DISL), an encapsulation layer (ENC), and a sensor electrode layer (SENL).

[0084] The substrate (SUB) may be a stretchable flexible substrate. The substrate (SUB) may be made of an insulating material. For example, the substrate (SUB) may be made of a polymer resin such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0085] In another embodiment, the substrate (SUB) may have a hard material. For example, the substrate (SUB) may be made of glass. The substrate (SUB) may be made of ultra-thin glass (UTG) having a thickness of approximately 500 μm or less. Preferably, the thickness of the substrate (SUB) may be approximately 200 μm.

[0086] A display layer (DISL) may be disposed on a first surface of a substrate (SUB). The display layer (DISL) may be a layer that displays an image. The display layer (DISL) may include a thin-film transistor layer (TFTL) (see FIG. 7) in which thin-film transistors are formed, and a light-emitting element layer (EML) (see FIG. 7) in which light-emitting elements are disposed in light-emitting regions.

[0087] Scan lines, data lines, power lines, etc. for emitting light may be arranged in the display area (DA) of the display layer (DISL). In the non-display area (NDA) of the display layer (DISL), a scan driving circuit that outputs scan signals to the scan lines, and fan-out lines connecting the data lines and the driving circuit (200) may be arranged.

[0088] The encapsulation layer (ENC) may be a layer for encapsulating the light-emitting element layer (EML) of the display layer (DISL) to prevent oxygen or moisture from penetrating into the light-emitting element layer (EML) of the display layer (DISL). The encapsulation layer (ENC) may be disposed on the display layer (DISL). The encapsulation layer (ENC) may be disposed on the top surface and sides of the display layer (DISL). The encapsulation layer (ENC) may be disposed to cover the display layer (DISL).

[0089] A sensor electrode layer (SENL) may be disposed on a display layer (DISL). The sensor electrode layer (SENL) may include sensor electrodes. The sensor electrode layer (SENL) can detect a user's touch using the sensor electrodes.

[0090] A polarizing film (PF) may be placed on a display panel (100) to prevent external light from being reflected from the display panel (100) and thereby reducing the visibility of the image displayed on the display panel (100). The polarizing film (PF) may include a first base member, a linear polarizer, a phase delay film such as a quarter-wave plate (λ / 4 plate), and a second base member. The first base member, the phase delay film, the linear polarizer, and the second base member of the polarizing film (PF) may be sequentially laminated on the display panel (100).

[0091] In another embodiment, an optical layer including a color filter may be disposed between the display panel (100) and the cover window (CW) instead of a polarizing film (PF). By including a plurality of color filters, the optical layer can prevent external light from being reflected by the display panel (100) and thereby reducing the visibility of the image displayed on the display panel (100).

[0092] A cover window (CW) can be placed on a polarizing film (PF). The cover window (CW) can be attached to the polarizing film (PF) by a transparent adhesive member such as an optically clear adhesive (OCA) film or an optically clear resin (OCR).

[0093] A panel lower cover (PB) may be placed on a second surface of a substrate (SUB) of a display panel (100). The second surface of the substrate (SUB) may be the opposite surface of the first surface. The panel lower cover (PB) may be attached to the second surface of the substrate (SUB) of the display panel (100) through an adhesive member. The adhesive member may be a pressure-sensitive adhesive (PSA).

[0094] The lower panel cover (PB) may include at least one of a light-blocking member for absorbing light incident from the outside, a cushioning member for absorbing shock from the outside, and a heat dissipation member for efficiently dissipating heat from the display panel (100).

[0095] A light-blocking member may be placed at the bottom of a display panel (100). The light-blocking member blocks the transmission of light, thereby preventing components placed at the bottom of the light-blocking member, such as a circuit board (300), from being visible from the top of the display panel (100). The light-blocking member may include a light-absorbing material such as a black pigment or a black dye.

[0096] A cushioning member may be placed below the light-blocking member. The cushioning member absorbs external shocks to prevent the display panel (100) from being damaged. The cushioning member may be composed of a single layer or multiple layers. For example, the cushioning member may be formed from a polymer resin such as polyurethane, polycarbonate, polypropylene, or polyethylene, or may be made of an elastic material such as a sponge formed by foam molding rubber, a urethane-based material, or an acrylic-based material.

[0097] A heat dissipation member may be placed at the bottom of a buffer member. The heat dissipation member may include a first heat dissipation layer comprising graphite or carbon nanotubes, and a second heat dissipation layer formed of a metal thin film such as copper, nickel, ferrite, or silver, which can shield electromagnetic waves and has excellent thermal conductivity.

[0098] The circuit board (300) can be bent downwards toward the display panel (100) as shown in FIG. 6. The circuit board (300) can be attached to the lower surface of the panel bottom cover (PB) by an adhesive member (310). The adhesive member (310) may be a pressure-sensitive adhesive.

[0099] FIG. 7 is a cross-sectional view showing a cross-section of a display area of ​​a display device according to one embodiment.

[0100] Referring to FIG. 7, a display panel (100) according to one embodiment may be an organic light-emitting display panel having a light-emitting element (LE) including an organic light-emitting layer (172).

[0101] As the substrate (SUB) has been described above with reference to FIGS. 5 and FIGS. 6, it will be omitted.

[0102] The display layer (DISL) may include a thin-film transistor layer (TFTL) comprising a plurality of thin-film transistors and a light-emitting element layer (EML) comprising a plurality of light-emitting elements.

[0103] The thin-film transistor layer (TFTL) may include a first buffer layer (BF1), an active layer, a gate insulating layer (130), a first gate metal layer, a first interlayer insulating layer (141), a second gate metal layer, a second interlayer insulating layer (142), a first data metal layer, a first organic layer (160), a second data metal layer, and a second organic layer (180). The thin-film transistor layer (TFTL) may further include a thin-film transistor (TFT) and a capacitor (Cst).

[0104] The first buffer film (BF1) may be disposed on a substrate (SUB). The first buffer film (BF1) may be formed from an inorganic material such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer. Alternatively, the first buffer film (BF1) may be formed as a multilayer film in which a plurality of layers among a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked.

[0105] An active layer comprising a channel region (TCH), a source region (TS), and a drain region (TD) of a thin-film transistor (TFT) may be disposed on a first buffer film (BF1). The active layer may be formed of polycrystalline silicon, single-crystal silicon, low-temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor material. If the active layer comprises polycrystalline silicon or an oxide semiconductor material, the source region (TS) and the drain region (TD) in the active layer may be conductive regions that are doped with ions or impurities to provide conductivity.

[0106] A gate insulating film (130) can be placed on the active layer of a thin-film transistor (TFT). The gate insulating film (130) can be formed from an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0107] A first gate metal layer comprising a gate electrode (TG) of a thin-film transistor (TFT), a first capacitor electrode (CAE1) of a capacitor (Cst), and scan lines may be disposed on a gate insulating film (130). The gate electrode (TG) of the thin-film transistor (TFT) may overlap with a channel region (TCH) in a third direction (DR3). The first gate metal layer may be formed as a single layer or a multilayer composed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0108] The first interlayer insulating film (141) may be disposed on the first gate metal layer. The first interlayer insulating film (141) may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first interlayer insulating film (141) may include a plurality of inorganic films.

[0109] A second gate metal layer comprising a second capacitor electrode (CAE2) of a capacitor (Cst) may be disposed on a first interlayer insulating film (141). The second capacitor electrode (CAE2) may overlap with the first capacitor electrode (CAE1) in a third direction (DR3). Thus, a capacitor (Cst) may be formed by the first capacitor electrode (CAE1), the second capacitor electrode (CAE2), and an inorganic insulating dielectric film disposed between them that acts as a dielectric film. The second gate metal layer may be formed as a single layer or a multilayer composed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0110] The second interlayer insulating film (142) may be disposed on the second gate metal layer. The second interlayer insulating film (142) may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second interlayer insulating film (142) may include a plurality of inorganic films.

[0111] A first data metal layer comprising a first connection electrode (CE1) and data lines may be disposed on a second interlayer insulating film (142). The first connection electrode (CE1) may be connected to a drain region (TD) through a first contact hole (CT1) penetrating the gate insulating film (130), the first interlayer insulating film (141), and the second interlayer insulating film (142). The first data metal layer may be formed as a single layer or a multilayer composed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0112] A first organic film (160) for flattening the step difference caused by thin-film transistors (TFTs) can be placed on a first connecting electrode (CE1). The first organic film (160) can be formed from an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0113] A second data metal layer including a second connecting electrode (CE2) may be disposed on a first organic film (160). The second data metal layer may be connected to the first connecting electrode (CE1) through a second contact hole (CT2) penetrating the first organic film (160). The second data metal layer may be formed as a single layer or a multilayer composed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0114] The second organic film (180) may be placed on the second connecting electrode (CE2). The second organic film (180) may be formed from an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0115] A light-emitting element layer (EML) is disposed on the thin-film transistor layer (TFTL). The light-emitting element layer (EML) may include light-emitting elements (LE) and a bank (190).

[0116] Each of the light-emitting elements (LE) may include a pixel electrode (171), a light-emitting layer (172), and a common electrode (173). Each of the light-emitting regions (EA) represents a region in which the pixel electrode (171), the light-emitting layer (172), and the common electrode (173) are sequentially stacked so that holes from the pixel electrode (171) and electrons from the common electrode (173) combine with each other in the light-emitting layer (172) to emit light. In this case, the pixel electrode (171) may be an anode electrode and the common electrode (173) may be a cathode electrode.

[0117] A pixel electrode layer including a pixel electrode (171) may be formed on a second organic film (180). The pixel electrode (171) may be connected to a second connecting electrode (CE2) through a third contact hole (CT3) penetrating the second organic film (180). The pixel electrode layer may be formed as a single layer or a multilayer composed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0118] In a top emission structure that emits light in the direction of a common electrode (173) based on a light-emitting layer (172), the pixel electrode (171) may be formed as a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or, to increase reflectivity, may be formed as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO / APC / ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0119] The bank (190) serves to define the light-emitting regions (EA) of the pixels. To this end, the bank (190) may be formed to expose a portion of the pixel electrode (171) on the second organic film (180). The bank (190) may cover the edge of the pixel electrode (171). The bank (190) may be placed within the third contact hole (CT3). That is, the third contact hole (CT3) may be filled by the bank (190). The bank (190) may be formed from an organic film such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0120] A spacer (191) may be placed on the bank (190). The spacer (191) may serve to support the mask during the process of manufacturing the light-emitting layer (172). The spacer (191) may be formed from an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0121] A light-emitting layer (172) is formed on the pixel electrode (171). The light-emitting layer (172) may include an organic material and emit a selected color. For example, the light-emitting layer (172) may include a hole transporting layer, an organic material layer, and an electron transporting layer. The organic material layer may include a host and a dopant. The organic material layer may include a material that emits selected light and may be formed using a phosphorescent material or a fluorescent material.

[0122] A common electrode (173) is formed on the light-emitting layer (172). The common electrode (173) may be formed to cover the light-emitting layer (172). The common electrode (173) may be a common layer formed commonly in the light-emitting regions (EA1, EA2, EA3, EA4). A capping layer may be formed on the common electrode (173).

[0123] In the upper light-emitting structure, the common electrode (173) can be formed from a transparent conductive material (TCO, Transparent Conductive Material) such as ITO or IZO that can transmit light, or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). When the common electrode (173) is formed from a semi-transmissive conductive material, the light emission efficiency can be increased by the micro cavity.

[0124] An encapsulation layer (ENC) may be formed on a light-emitting element layer (EML). The encapsulation layer (ENC) may include at least one inorganic film (TFE1, TFE2) to prevent oxygen or moisture from penetrating into the light-emitting element layer (EML). Additionally, the encapsulation layer (ENC) may include at least one organic film to protect the light-emitting element layer (EML) from foreign substances such as dust. For example, the encapsulation layer (ENC) may include a first encapsulation inorganic film (TFE1), an encapsulation organic film (TFE2), and a second encapsulation inorganic film (TFE3).

[0125] A first encapsulating inorganic film (TFE1) may be disposed on a common electrode (173), an encapsulating organic film (TFE2) may be disposed on the first encapsulating inorganic film (TFE1), and a second encapsulating inorganic film (TFE3) may be disposed on the encapsulating organic film (TFE2). The first encapsulating inorganic film (TFE1) and the second encapsulating inorganic film (TFE3) may be formed as a multilayer film in which one or more inorganic films selected from a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked. The encapsulating organic film (TFE2) may be an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0126] The sensor electrode layer (SENL) is disposed on the encapsulation layer (ENC). The sensor electrode layer (SENL) may include sensor electrodes (TE, RE).

[0127] The second buffer layer (BF2) may be disposed on the encapsulation layer (ENC). The second buffer layer (BF2) may include at least one inorganic film. For example, the second buffer layer (BF2) may be formed as a multilayer in which one or more inorganic films selected from a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked. The second buffer layer (BF2) may be omitted.

[0128] The first connections (BE1) can be placed on the second buffer film (BF2). The first connections (BE1) can be formed as a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO / APC / ITO).

[0129] The first sensor insulating film (TINS1) may be disposed on the first connection portions (BE1). The first sensor insulating film (TINS1) may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0130] Sensor electrodes, namely driving electrodes (TE) and sensing electrodes (RE), may be disposed on the first sensor insulating film (TNIS1). Additionally, dummy patterns may be disposed on the first sensor insulating film (TNIS1). The driving electrodes (TE), sensing electrodes (RE), and dummy patterns do not overlap with the light-emitting regions (EA). The driving electrodes (TE), sensing electrodes (RE), and dummy patterns may be formed as a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO / APC / ITO).

[0131] The second sensor insulating film (TINS2) may be disposed on driving electrodes (TE), sensing electrodes (RE), and dummy patterns. The second sensor insulating film (TINS2) may include at least one of an inorganic film and an organic film. The inorganic film may be a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic film may be an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0132] The polarizing film (PF) and cover window (CW) have been described above with reference to FIGS. 5 and FIGS. 6, so they will be omitted.

[0133] The display device (10) according to the embodiment of the present specification is not limited to the display device (10) including the organic light-emitting layer (172) shown in FIG. 7. For example, the display device (10) according to the embodiment of the present specification may be a display device (10) including an inorganic light-emitting diode, a quantum dot light-emitting diode, etc.

[0134] FIG. 8 is a front perspective view showing a cover window according to one embodiment. FIG. 9 is a rear perspective view showing a cover window according to one embodiment. FIG. 10 is a top view showing a cover window according to one embodiment.

[0135] Referring to FIGS. 8 to 10, the cover window (CW) includes a front (FS), a back (BS), first to fourth sides (SS1, SS2, SS3, SS4), and first to fourth corner surfaces (CS1, CS2, CS3, CS4).

[0136] The front surface (FS) may have a short side in the first direction (DR1) and a long side in the second direction (DR2). The corner where the short side in the first direction (DR1) and the long side in the second direction (DR2) meet on the front surface (FS) may be formed rounded or at a right angle to have a selected radius of curvature. The front surface (FS) may be formed flat or may include a curved portion having a selected radius of curvature.

[0137] The first side (SS1) extends from the first side (S1) of the front (FS), and the first side (S1) of the front (FS) may be the left side of the front (FS). The second side (SS2) extends from the second side (S2) of the front (FS), and the second side (S2) of the front (FS) may be the lower side of the front (FS). The third side (SS3) extends from the third side (S3) of the front (FS), and the third side (S3) of the front (FS) may be the right side of the front (FS). The fourth side (SS4) extends from the fourth side (S4) of the front (FS), and the fourth side (S4) of the front (FS) may be the upper side of the front (FS).

[0138] The first corner (CS1) may be a corner side positioned between the first side (SS1) and the second side (SS2). The second corner (CS2) may be a corner side positioned between the second side (SS2) and the third side (SS3). The third corner (CS3) may be a corner side positioned between the third side (SS3) and the fourth side (SS4). The fourth corner (CS4) may be a corner side positioned between the first side (SS1) and the fourth side (SS4).

[0139] FIG. 11 is a cross-sectional view taken along X1-X1' of FIG. 10. FIG. 11 is a cross-sectional view showing the first side (SS1) of the cover window (CW). Since the shapes of the second to fourth sides (SS2, SS3, SS4) of the cover window (CW) may have substantially the same shape with only differences in orientation, only the first side (SS1) will be described.

[0140] Referring to FIG. 11, the first side (SS1) of the cover window (CW) may have a curved shape having a selected radius of curvature. The radius of curvature of the first side (SS1) of the cover window (CW) may be approximately 15R to 25R. By having a radius of curvature of 15R to 25R of the first side (SS1) of the cover window (CW), the impact strength of the first side (SS1) may be increased.

[0141] The radius of curvature of the first side (SS1) may be the same or different at each point of the first side (SS1). If the radius of curvature of the first side (SS1) is different at each point of the first side (SS1), the radius of curvature of the first side (SS1) may be defined as the average value of the radii of curvature at each point of the first side (SS1).

[0142] In one embodiment, the width (Wss1) of the first side (SS1) of the cover window (CW), i.e., the length of the first direction (DR1), may be approximately 10 μm to 20 μm, and the thickness (Tcw) of the cover window (CW) may be approximately 30 μm to 60 μm.

[0143] Hereinafter, a method for manufacturing a cover window according to one embodiment is described.

[0144] FIG. 12 is a flowchart illustrating a method for manufacturing a cover window according to one embodiment. FIG. 13 and FIG. 14 are perspective views illustrating step S110 of FIG. 12. FIG. 15 is a cross-sectional view illustrating step S120 of FIG. 12. FIG. 16 and FIG. 17 are cross-sectional views illustrating step S110 of FIG. 12. FIG. 18 is an enlarged view of area A of FIG. 15.

[0145] Referring to FIGS. 12 to 18, a method for manufacturing a cover window (S10) according to one embodiment may include the step of forming a sketch line for forming a plurality of cover windows by irradiating a mother glass with a laser beam (S110) and the step of etching a plurality of cover windows using an etching solution (S120).

[0146] First, as shown in FIGS. 13 and 16, a laser beam (BM) can be irradiated onto a source glass (MSUB) to form a sketch line (LS) for forming a plurality of cover windows (CW). (S110 in FIG. 12)

[0147] A laser processing device (LD) can scan a laser beam (BM) along a predetermined virtual line to form a plurality of cover windows (CW). The laser processing device (LD) can scan a laser beam (BM) along a virtual line corresponding to a first side (SS1) of any one of the plurality of cover windows (CW). Then, it can scan a laser beam (BM) along virtual lines corresponding to a second side (SS2), a third side (SS3), and a fourth side (SS4) of said cover window (CW). When the laser processing device (LD) has completed scanning a laser beam (BM) along a virtual line corresponding to any one of the plurality of cover windows (CW), it can start scanning a laser beam (BM) along a virtual line corresponding to another cover window (CW). The laser processing device (LD) can sequentially complete scanning a laser beam (BM) for all of the plurality of cover windows (CW).

[0148] Then, as illustrated in FIGS. 14 and 17, a plurality of cover windows (CW) can be separated from the original glass (MSUB) by a plurality of sketch lines (LS) formed by a laser beam (BM) scan. Additionally, a plurality of sketch lines (LS) formed by a laser beam (BM) scan can be formed along the edge of each of the plurality of cover windows (CW) and inward from the side of the plurality of cover windows (CW). (S110 in FIG. 12)

[0149] For example, a plurality of sketch lines (LS) may include a plurality of first sketch lines (LS1) and a plurality of second sketch lines (LS2).

[0150] A plurality of first sketch lines (LS1) are cutting lines for separating a plurality of cover windows (CW) from the original glass (MSUB). The plurality of first sketch lines (LS1) may be straight lines in the shape of a straight line or an I-shape extending in the third direction (DR3) on a cross-section cut by a plane defined by the second direction (DR2) and the third direction (DR3) or by a plane defined by the first direction (DR1) and the third direction (DR3).

[0151] A plurality of second sketch lines (LS2) may be partial cutting lines for forming sides (SS1, SS2, SS3, SS4) of a plurality of cover windows (CW) to have a selected radius of curvature. For example, the plurality of second sketch lines (LS2) may not be cutting lines that completely separate the original glass (MSUB) or the plurality of cover windows (CW), but may be processing lines that provide a path for the etching solution (ETL) to penetrate so as to form the shape of the first to fourth sides (SS1, SS2, SS3, SS4).

[0152] A plurality of second sketch lines (LS2) may be arranged apart from a plurality of first sketch lines (LS1) in a first direction (DR1) or a second direction (DR2). The plurality of second sketch lines (LS2) may be straight lines in a straight line shape or an I shape extending in the third direction (DR3) on a plane defined by the second direction (DR2) and the third direction (DR3) or on a cross-section cut by the plane defined by the first direction (DR1) and the third direction (DR3). The plurality of second sketch lines (LS2) may be semi-straight lines extending inward toward the original glass (MSUB) or cover window (CW) along the third direction (DR3) on the upper and lower surfaces of the original glass (MSUB) or cover window (CW).

[0153] Among the plurality of second sketch lines (LS2), the second sketch line (LS2) extending from the upper surface of the original glass (MSUB) or cover window (CW) may be spaced apart in a third direction (DR3) from the second sketch line (LS2) extending from the lower surface of the original glass (MSUB) or cover window (CW). That is, the second sketch line (LS2) may not completely penetrate the interior of the original glass (MSUB) or cover window (CW), but may only partially penetrate inward from the upper and lower surfaces.

[0154] In summary, multiple cover windows (CW) are separated from the original glass (MSUB) by multiple first sketch lines (LS1), and at the same time, multiple second sketch lines (LS2) can be formed along the edges of each of the multiple cover windows (CW).

[0155] In some embodiments, a plurality of first sketch lines (LS1) and a plurality of second sketch lines (LS2) can be formed simultaneously by scanning a laser beam (BM) of a laser processing device (LD). For example, the laser processing device (LD) can scan a source glass (MSUB) while outputting a laser beam (BM) several times, and a plurality of first sketch lines (LS1) and a plurality of second sketch lines (LS2) can be formed simultaneously by each laser beam (BM).

[0156] Next, as illustrated in FIGS. 15 and 18, a plurality of cover windows (CW) can be etched using an etching solution (ETL). (S120 of FIG. 12)

[0157] A plurality of cover windows (CW) having a second sketch line (LS2) formed thereon can be etched by an etching solution (ETL). For example, the cover windows (CW) can be immersed in the etching solution (ETL) of an etching solution storage tank (STK) in which the etching solution (ETL) is stored.

[0158] Accordingly, the thickness of the cover window (CW) can be slimmed down from a first thickness (T1) to a second thickness (T2). The thickness of the cover window (CW) can be reduced by approximately 20% to 50%.

[0159] Additionally, the etching solution (ETL) penetrates the second sketch line (LS2), allowing not only etching in the thickness direction of the cover window (CW) (e.g., the third direction (DR3)), but also etching in the direction from the second sketch line (LS2) toward the cover window (CW) due to the isotropy of the etching solution (ETL). Accordingly, the first to fourth sides (SS1, SS2, SS3, SS4) of the cover window (CW) can be formed along the shape of the second sketch line (LS2).

[0160] Each of the multiple cover windows (CW) can be formed to have selected curved side surfaces (SS1, SS2, SS3, SS4) by only using a laser process using a laser processing device (LD) and an etching process using an etching solution (ETL). Therefore, when manufacturing the multiple cover windows (CW), defects such as wedges and chipping caused by the CNC process can be prevented, thereby lowering the manufacturing cost.

[0161] Hereinafter, a method (S10) for manufacturing a cover window according to another embodiment is described, wherein each of the plurality of cover windows (CW) is formed to have curved sides (SS1, SS2, SS3, SS4) having a selected radius of curvature, as described with reference to FIG. 11, etc.

[0162] FIGS. 19 and 20 are cross-sectional views illustrating step S110_1 of a method for manufacturing a cover window according to another embodiment. FIG. 21 is a cross-sectional view illustrating step S120_1 of a method for manufacturing a cover window according to another embodiment.

[0163] With reference to FIG. 19 to FIG. 21 in addition to FIG. 12, the method for manufacturing a cover window (S10) according to another embodiment is different from the method for manufacturing a cover window (S10) according to one embodiment described with reference to FIG. 16, etc., in that it further includes a third sketch line (LS3).

[0164] More specifically, a method for manufacturing a cover window (S10) according to another embodiment may include the step of forming a sketch line for forming a plurality of cover windows by irradiating a mother glass with a laser beam (S110_1) and the step of etching a plurality of cover windows using an etching solution (S120_1).

[0165] A plurality of sketch lines (LS) may include a plurality of first sketch lines (LS1), a plurality of second sketch lines (LS2), and a plurality of third sketch lines (LS3).

[0166] The description of the plurality of first sketch lines (LS1) and the plurality of second sketch lines (LS2) is the same as previously described and is therefore omitted.

[0167] A plurality of third sketch lines (LS3) may be partial cutting lines for forming sides (SS1, SS2, SS3, SS4) of a plurality of cover windows (CW) to have a selected radius of curvature together with a plurality of second sketch lines (LS2). For example, the plurality of third sketch lines (LS3) may not be cutting lines that completely separate the original glass (MSUB) or the plurality of cover windows (CW), but rather processing lines that provide a path for the etching solution (ETL) to penetrate so as to form the shape of the first to fourth sides (SS1, SS2, SS3, SS4).

[0168] Multiple third sketch lines (LS3) may be positioned apart from multiple second sketch lines (LS2) in the first direction (DR1) or the second direction (DR2). For example, multiple third sketch lines (LS3) may be positioned on the opposite side of multiple first sketch lines (LS1) with multiple second sketch lines (LS2) in between. The multiple third sketch lines (LS3) may be straight lines in the shape of a straight line or an I-shape extending in the third direction (DR3) on a plane defined by the second direction (DR2) and the third direction (DR3) or on a cross-section cut by the plane defined by the first direction (DR1) and the third direction (DR3). The multiple third sketch lines (LS3) may be semi-straight lines extending inward toward the original glass (MSUB) or cover window (CW) along the third direction (DR3) on the upper and lower surfaces of the original glass (MSUB) or cover window (CW).

[0169] Among the plurality of third sketch lines (LS3), the third sketch line (LS3) extending from the upper surface of the original glass (MSUB) or cover window (CW) may be spaced apart in the third direction (DR3) from the third sketch line (LS3) extending from the lower surface of the original glass (MSUB) or cover window (CW). That is, the third sketch line (LS3) may not completely penetrate the interior of the original glass (MSUB) or cover window (CW), but may only partially penetrate inward from the upper and lower surfaces.

[0170] In some embodiments, the depth to which each of the plurality of third sketch lines (LS3) penetrates the original glass (MSUB) or cover window (CW) may be smaller than the depth to which each of the plurality of second sketch lines (LS2) penetrates the original glass (MSUB) or cover window (CW).

[0171] In summary, multiple cover windows (CW) are separated from the original glass (MSUB) by multiple first sketch lines (LS1), and at the same time, multiple second sketch lines (LS2) and multiple third sketch lines (LS3) can be formed along the edges of each of the multiple cover windows (CW).

[0172] In some embodiments, a plurality of first sketch lines (LS1), a plurality of second sketch lines (LS2), and a plurality of third sketch lines (LS3) can be formed simultaneously by scanning a laser beam (BM) of a laser processing device (LD). For example, the laser processing device (LD) can scan a source glass (MSUB) while outputting a laser beam (BM) several times, and a plurality of first sketch lines (LS1), a plurality of second sketch lines (LS2), and a plurality of third sketch lines (LS3) can be formed simultaneously by each laser beam (BM).

[0173] A plurality of cover windows (CW) formed with a second sketch line (LS2) and a third sketch line (LS) can be etched by an etching solution (ETL). For example, the cover windows (CW) can be immersed in the etching solution (ETL) of an etching solution storage tank (STK) in which the etching solution (ETL) is stored.

[0174] Accordingly, the thickness of the cover window (CW) can be slimmed down from a first thickness (T1) to a second thickness (T2). The thickness of the cover window (CW) can be reduced by approximately 20% to 50%.

[0175] Additionally, the etching solution (ETL) penetrates the second sketch line (LS2) and the third sketch line (LS3), allowing not only etching in the thickness direction of the cover window (CW) (e.g., the third direction (DR3)), but also, due to the isotropy of the etching solution (ETL), etching can proceed in the direction from the second sketch line (LS2) toward the cover window (CW) and in the direction from the third sketch line (LS3) toward the cover window (CW). Accordingly, the first to fourth sides (SS1, SS2, SS3, SS4) of the cover window (CW) can be formed along the shapes of the second sketch line (LS2) and the third sketch line (LS3).

[0176] In the above description, two sketch lines (LS) or three sketch lines (LS) were used as examples in the manufacturing method (S10) of the cover window; however, excluding the first sketch line (LS1) for dividing the cover window (CW), the number of sketch lines (LS) for shape processing can be varied. As the number of sketch lines (LS) for shape processing increases, the first to fourth sides (SS1, SS2, SS3, SS4) of the cover window (CW) can approach a curved shape having a selected radius of curvature.

[0177] Hereinafter, a manufacturing apparatus for a cover window according to one embodiment is described.

[0178] FIG. 22 is a side schematic diagram showing a manufacturing apparatus for a cover window according to one embodiment.

[0179] Referring to FIG. 22, a laser processing device (LD) (or a cover window manufacturing device) according to one embodiment may be a cover window manufacturing device for manufacturing a cover window (CW). For example, the laser processing device (LD) may use a laser beam (BM) to form a sketch line (LS) for forming a cover window (CW) from a source glass (MSUB).

[0180] A laser processing device (LD) according to one embodiment may include a light source (LR), a beam splitter (BST), a first phase mask (DE1), a second phase mask (DE2), an optical delay (OTD), a beam combiner (BC), a relay lens (RLNS), and an objective lens (OLNS).

[0181] The light source (LR) may be various known laser generating devices. The light source (LR) may emit a raw laser beam (RLB). The light source (LR) may emit the raw laser beam (RLB) continuously or discontinuously. The light source (LR) may output a raw laser beam (RLB) of a single pulse or a raw laser beam (RLB) of a burst pulse comprising multiple pulses.

[0182] The light source (LR) can control the pulse duration, burst pulse, pulse energy, and repetition rate of the raw laser beam (RLB). For example, the pulse duration of the raw laser beam (RLB) may be approximately 300 fs (femto second) to 10 ps (pico second). The repetition rate of the raw laser beam (RLB) may be approximately 10 kHz to 1,000 kHz. When the light source (LR) outputs a raw laser beam (RLB) with burst pulses, the burst pulse of the raw laser beam (RLB) may be approximately 2 to 5 pulses.

[0183] According to one embodiment, the source laser beam (RLB) may be various laser beams, but the source laser beam (RLB) may have a wavelength band of approximately 300 nm to 2 µm. Preferably, the source laser beam (RLB) may be an infrared Gaussian beam having a wavelength band of approximately 800 nm to 1,100 nm.

[0184] A beam splitter (BST) can split a raw laser beam (RLB) incident from a light source (LR) into a main beam (MB) and a sub-beam (SB). In some embodiments, the beam splitter (BST) may be an optical element that reflects some of the light and transmits some of it. For example, the beam splitter (BST) may include a semi-transparent mirror or a diffractive optical element (DOE).

[0185] In the method for manufacturing a cover window (S10) described with reference to FIG. 12, etc., the main beam (MB) can form a first sketch line (LS1) (see FIG. 13), and the sub-beam (SB) can form a second sketch line (LS2) (and a third sketch line (LS3)).

[0186] In some embodiments, the beam splitter (BST) can adjust the polarization state of the main beam (MB) and the sub-beam (SB). For example, the beam splitter (BST) can make the angles of the polarization axes of the main beam (MB) and the sub-beam (SB) different from each other with respect to the extension direction of the polarization axes or a specific direction. As an example, the polarization axes of the main beam (MB) and the sub-beam (SB) can be converted to a state where they are orthogonal to each other by the beam splitter (BST).

[0187] In the drawings, the source laser beam (RLB) is shown being split into two beams (e.g., a main beam (MB) and a sub-beam (SB)) by a beam splitter (BST), but is not limited thereto. The number of beams formed by splitting the source laser beam (RLB) by the beam splitter (BST) can be varied. For example, the source laser beam (RLB) may be split into one main beam (MB) and two or more sub-beams (SB) by the beam splitter (BST).

[0188] According to the laser processing device (LD) of the present embodiment, the paths of the main beam (MB) and the sub-beam (SB) can be spatially separated by a beam splitter (BST). Here, spatial separation includes not only cases where the paths of the main beam (MB) and the sub-beam (SB) do not completely overlap each other as shown in the drawings, but also cases where the main beam (MB) and the sub-beam (SB) move along the same path while having different vibration directions as the angles of the polarization axes differ.

[0189] The paths of the main beam (MB) and the sub-beam (SB) are spatially separated by the beam splitter (BST) and incident on the first phase mask (DE1) and the second phase mask (DE2), respectively, thereby allowing the shape and imaging position of the main beam (MB) and the sub-beam (SB) that are finally incident on the focal plane (FF) to be adjusted. The shape and imaging position of the main beam (MB) and the sub-beam (SB) will be described later with reference to FIG. 25, etc.

[0190] In addition, by spatially separating the paths of the main beam (MB) and the sub-beam (SB) by the beam splitter (BST), diffraction interference between the main beam (MB) and the sub-beam (SB) can be minimized when they are diffracted at the first phase mask (DE1) and the second phase mask (DE2), respectively.

[0191] The first phase mask (DE1) may be located between the beam splitter (BST) and the beam combiner (BC) in the path of the main beam (MB). The first phase mask (DE1) may be an optical diffraction element for transforming the shape of the incident main beam (MB). For example, the main beam (MB) may be transformed into a Bessel beam shape by the first phase mask (DE1). In some embodiments, the first phase mask (DE1) may be a diffractive optical element (DOE) with a fixed diffraction pattern or a spatial light modulator (SLM) capable of actively changing diffraction patterns.

[0192] The second phase mask (DE2) may be located between the beam splitter (BST) and the beam combiner (BC) in the path of the sub-beam (SB). The second phase mask (DE2) may be an optical diffraction element for transforming the shape of the incident sub-beam (SB). For example, the sub-beam (SB) may be transformed into a Bessel beam shape by the second phase mask (DE2). In some embodiments, the second phase mask (DE2) may be a diffractive optical element (DOE) with a fixed diffraction pattern or a spatial light modulator (SLM) capable of actively changing diffraction patterns.

[0193] In the drawing, the laser processing device (LD) is depicted as including two phase masks, but the number of phase masks is not limited thereto. The number of phase masks included in the laser processing device (LD) may vary depending on the number of main beams (MB) and sub-beams (SB). For example, the number of phase masks included in the laser processing device (LD) may be equal to the number of main beams (MB) and sub-beams (SB).

[0194] According to the laser processing device (LD) of the present embodiment, by including phase masks involved in the diffraction of the main beam (MB) and the sub-beam (SB) respectively, diffraction interference between the main beam (MB) and the sub-beam (SB) can be minimized when the main beam (MB) and the sub-beam (SB) are diffracted at the first phase mask (DE1) and the second phase mask (DE2), respectively.

[0195] An optical delay (OTD) may be placed between the beam splitter (BST) and the second phase mask (DE2) in the path of the sub-beam (SB). However, it is not limited thereto, and an optical delay (OTD) may also be placed in the path of the main beam (MB). For example, an optical delay (OTD) may be placed between the beam splitter (BST) and the first phase mask (DE1) in the path of the main beam (MB).

[0196] An optical delayer (OTD) is placed on the path of either the main beam (MB) or the sub-beam (SB) to delay the arrival time by adjusting the path length of either the main beam (MB) or the sub-beam (SB). For example, as illustrated in FIG. 22, the optical delayer (OTD) can delay the arrival time by adjusting the path length of the sub-beam (SB) so that it arrives at the beam coupling section (BC) later than the main beam (MB). In some embodiments, the optical delayer (OTD) may include a reflective mirror or an optical fiber loop.

[0197] In one embodiment, the time delay range of the optical delay device (OTD) may be approximately 1 ps to 10 ps. For example, either the main beam (MB) and the sub-beam (SB) may arrive at the beam coupling section (BC) approximately 1 ps to 10 ps later than the other.

[0198] According to the laser processing device of the present embodiment, the arrival time of either the main beam (MB) or the sub-beam (SB) can be delayed by an optical delayer (OTD), thereby separating the main beam (MB) and the sub-beam (SB) in time. Accordingly, when the main beam (MB) and the sub-beam (SB) are diffracted at the first phase mask (DE1) and the second phase mask (DE2), respectively, diffraction interference between them can be minimized.

[0199] A beam combining section (BC) may be located between the first and second phase masks (DE1, DE2) and the relay lens (RLNS) (or objective lens (OLNS)). The beam combining section (BC) may combine the main beam (MB) and the sub-beam (SB) to form a single combined beam (CB). In some embodiments, the beam combining section (BC) may include a translucent mirror, a prism, or a diffractive optical element (DOE).

[0200] Even if the main beam (MB) and the sub-beam (SB) are combined into a single combined beam (CB), as described above, since the main beam (MB) and the sub-beam (SB) are separated spatially and temporally, they can be formed at different positions on the focal plane (FF).

[0201] A relay lens (RLNS) may be placed between the beam coupling section (BC) and the objective lens (OLNS). The relay lens (RLNS) may transmit light in a ratio of n (where n is a positive integer):1 or 1:n. For example, the relay lens (RLNS) may transmit a coupled beam (CB) incident from the beam coupling section (BC) to the objective lens (OLNS) in a ratio of n:1 or 1:n. In some embodiments, the relay lens (RLNS) may be omitted.

[0202] The relay lens (RLNS) may include a first lens (LNS1) and a second lens (LNS2). The first lens (LNS1) may be positioned adjacent to the beam coupling section (BC), and the second lens (LNS2) may be positioned adjacent to the objective lens (OLNS).

[0203] In some embodiments, the first lens (LNS1) may be a convex lens convex in the direction of the beam coupling portion (BC), and the second lens (LNS2) may be a convex lens convex in the direction of the objective lens (OLNS).

[0204] The objective lens (OLNS) can form an image of the combined beam (CB) passing through the relay lens (RLNS) at a predetermined distance. For example, the objective lens (OLNS) can form an image of the combined beam (CB) passing through the relay lens (RLNS) on the focal plane (FF).

[0205] In some embodiments, the objective lens (OLNS) may have a high numerical aperture (NA). For example, the numerical aperture of the objective lens (OLNS) may be approximately 0.4 or higher.

[0206] FIG. 23 is a plan view showing the diffraction pattern of the first phase mask in the XY plane. FIG. 24 is a plan view showing the diffraction pattern of the second phase mask in the XY plane.

[0207] Referring to FIGS. 23 and 24, in order to form different shapes for the main beam (MB) and the sub beam (SB), the shapes of the first phase mask (DE1) and the second phase mask (DE2) may be different from each other.

[0208] As illustrated in FIG. 23, the first phase mask (DE1) may include a phase modulation structure (or diffraction pattern) arranged radially with respect to a single center (P0). For example, the first phase mask (DE1) may include a plurality of concentric phase modulation structures having the same single center (P0). In the illustration of FIG. 23, the dark portion (black portion) represents the trough portion of the phase modulation structure, and the bright portion (white portion) represents the peak portion of the phase modulation structure. A main beam (MB) is incident on this phase modulation structure and can be converted into a single long line beam in the shape of a straight line or an I-shape by diffraction and interference effects.

[0209] As illustrated in FIG. 24, the second phase mask (DE2) may include a phase modulation structure (or diffraction pattern) arranged radially with respect to two or more centers (P1, P2). For example, the second phase mask (DE2) may include a plurality of concentric circles having the same first center (P1), a plurality of concentric circles having the same second center (P2), and a phase modulation structure divided symmetrically to the left and right with respect to a reference line (L1) extending along the Y-axis. In the illustration of FIG. 24, the dark portion (black portion) represents the trough portion of the phase modulation structure, and the bright portion (white portion) represents the peak portion of the phase modulation structure. A sub-beam (SB) is incident on this phase modulation structure and can be converted into a dotted line beam composed of a plurality of short spot beams in the shape of a straight line or an I-shape by diffraction and interference effects.

[0210] The shapes of the main beam (MB) and sub-beam (SB), respectively transformed by the first phase mask (DE1) and the second phase mask (DE2), will be explained below with reference to FIG. 25 and the like. Below, the case in which one main beam (MB) and two sub-beams (SB) are formed will be explained as an example.

[0211] FIG. 25a is a photograph showing the two-dimensional shape of the main beam and sub-beams in the XY plane formed by a cover window manufacturing device according to one embodiment. FIG. 25b is a photograph showing the two-dimensional shape of the main beam and sub-beams in the XY plane formed by a cover window manufacturing device according to a comparative embodiment. FIG. 26a is a photograph showing the two-dimensional shape of the main beam and sub-beams in the YZ plane formed by a cover window manufacturing device according to one embodiment. FIG. 26b is a photograph showing the two-dimensional shape of the main beam and sub-beams in the YZ plane formed by a cover window manufacturing device according to a comparative embodiment. FIG. 27 is a graph showing the beam intensity of the main beam and sub-beams according to the Z-axis position.

[0212] The photographs shown in FIGS. 25a, 25b, 26a, and 26b illustrate the shapes of each beam in the focal plane (FF) (see FIG. 22).

[0213] Referring to FIGS. 25a, 25b, 26a, 26b, and 27, the main beam (MB) and sub-beams (SB1, SB2) formed by a cover window manufacturing device according to one embodiment may be spaced apart from each other in the Y-axis direction.

[0214] For example, as illustrated in FIG. 25a, the main beam (MB) and the first sub-beam (SB1) may be spaced apart from each other by a first Y-axis distance (dy1) in the Y-axis direction, and the first sub-beam (SB1) and the second sub-beam (SB2) may be spaced apart from each other by a second Y-axis distance (dy2) in the Y-axis direction. In some embodiments, the first Y-axis distance (dy1) and the second Y-axis distance (dy2) may each be 5 μm to 20 μm. The first Y-axis distance (dy1) and the second Y-axis distance (dy2) may be the same or different from each other.

[0215] The main beam (MB) formed by the cover window manufacturing device according to one embodiment may be a single long line beam in the shape of a straight line or an I-shape extending in the Z-axis direction. In one embodiment, the depth of focusing (DOF_M) of the main beam (MB) may be approximately several hundred micrometers. The depth of focusing (DOF_M) of the main beam (MB) is based on the full width at half maximum (FWHM) value in the Z-axis direction of the beam intensity of each beam shown in FIG. 27.

[0216] The sub-beams (SB1, SB2) formed by the cover window manufacturing device according to one embodiment may be dotted beams composed of a plurality of short spot beams in a straight line or I-shape extending in the Z-axis direction. The plurality of spot beams included in each of the sub-beams (SB1, SB2) may be spaced apart from each other in the Z-axis direction. For example, the plurality of spot beams may be spaced apart from each other by a first interval (dz). The first interval (dz) refers to the distance between the centers of the plurality of spot beams in the Z-axis direction.

[0217] In one embodiment, the depth of focus (DOF_S1) of each of the plurality of spot beams of the first sub-beam (SB1) and the depth of focus (DOF_S2) of each of the plurality of spot beams of the second sub-beam (SB2) may be approximately 20 μm or more. The depth of focus (DOF_S1) of each of the plurality of spot beams of the first sub-beam (SB1) and the depth of focus (DOF_S2) of each of the plurality of spot beams of the second sub-beam (SB2) are based on the full width at half maximum (FWHM) value in the Z-axis direction of the beam intensity of each beam shown in FIG. 27.

[0218] In some embodiments, the depth of focus (DOF_S1) of each of the plurality of spot beams of the first sub-beam (SB1) and the depth of focus (DOF_S2) of each of the plurality of spot beams of the second sub-beam (SB2) may be less than half of the first interval (dz). Accordingly, as described below with reference to FIG. 28, the plurality of spot beams may be positioned adjacent to the upper and lower surfaces of the original glass (MSUB) but may not penetrate the original glass (MSUB) like the main beam (MB).

[0219] The width (W_M) of the main beam (MB) in the Y-axis direction, the width (W_S1) of the first sub-beam (SB1) in the Y-axis direction, and the width (W_S2) of the second sub-beam (SB2) in the Y-axis direction may be approximately 1 μm or less. The width (W_M) of the main beam (MB) in the Y-axis direction, the width (W_S1) of the first sub-beam (SB1) in the Y-axis direction, and the width (W_S2) of the second sub-beam (SB2) in the Y-axis direction are based on the full width at half maximum (FWHM) value of the beam intensity of each beam in the Y-axis direction.

[0220] In some embodiments, the aspect ratio (AR) of the sub-beams (SB1, SB2) may be greater than 20. For example, the aspect ratio of the sub-beams (SB1, SB2) may be defined as the value of the depth of focus (DOF_S1, DOF_S2) of the sub-beams (SB1, SB2) relative to the width (W_S1, W_S2) of the sub-beams (SB1, SB2) in the Y-axis direction. Thus, as described above, since the width (W_S1, W_S2) of the sub-beams (SB1, SB2) in the Y-axis direction is approximately 1 μm or less and the value of the depth of focus (DOF_S1, DOF_S2) of the sub-beams (SB1, SB2) is approximately 20 μm or more, the aspect ratio may be approximately 20 or more.

[0221] Meanwhile, FIG. 27 illustrates graphs showing the beam intensity according to the Z-axis position of the main beam (MB) and sub-beams (SB1, SB2). The first graph (G1) is a graph showing the beam intensity of the main beam (MB), the second graph (G2) is a graph showing the beam intensity of the first sub-beam (SB1), and the third graph (G3) is a graph showing the beam intensity of the second sub-beam (SB2).

[0222] As illustrated in FIG. 27, the beam intensities of the sub-beams (SB1, SB2) may be approximately 30% to 80% of the beam intensity of the main beam (MB). In some embodiments, the beam intensity of the second sub-beam (SB2) may be smaller than the beam intensity of the first sub-beam (SB1). Here, the beam intensity of the main beam (MB) and the beam intensity of the sub-beams (SB1, SB2) each represent an average value in the range of 0 μm to 500 μm in the Z-axis direction.

[0223] FIGS. 25b and FIGS. 26b illustrate the shapes of a main beam (MB) and a sub-beam (SB) formed by a laser processing device (LD) according to a comparative embodiment. The laser processing device (LD) according to the comparative embodiment forms the main beam (MB) and the sub-beam (SB) using a single phase mask, rather than separate phase masks. Furthermore, the laser processing device (LD) according to the comparative embodiment does not include a beam splitter (BST) that controls the polarization state, unlike the laser processing device (LD) according to one embodiment, nor does it include an optical delayer (OTD) that delays the arrival time of either the main beam (MB) or the sub-beam (SB). Therefore, the main beam (MB) and the sub-beam (SB) may interfere with each other when diffracted by a single phase mask. Accordingly, as shown in the drawing, the image formation positions of the main beam (MB) and the sub-beam (SB) are not clearly separated, making it impossible to finely machine the side shape of the cover window (CW), and the vibration of each beam itself is severe, which also deteriorates the surface roughness characteristics of the side of the cover window (CW).

[0224] On the other hand, according to a laser processing device (LD) of one embodiment, the main beam (MB) and the sub-beam (SB) are not only individually diffracted by a first phase mask (DE1) and a second phase mask (DE2), respectively, but can also be spatially separated by having different polarization states by a beam splitter (BST) or by separating the paths themselves, and can also be temporally separated by an optical delay device (OTD). Accordingly, interference between the main beam (MB) and the sub-beam (SB) is minimized, thereby enabling the realization of a high-quality processing laser.

[0225] FIG. 28 is a schematic diagram showing sketch lines formed on the original glass by the main beam and sub-beams.

[0226] Referring to FIG. 28, the main beam (MB) can form a first sketch line (LS1) on the original glass (MSUB), the first sub-beam (SB1) can form a second sketch line (LS2) on the original glass (MSUB), and the second sub-beam (SB2) can form a third sketch line (LS3) on the original glass (MSUB).

[0227] The main beam (MB) can be positioned along the entire thickness of the original glass (MSUB) from the top surface to the bottom surface of the original glass (MSUB). Accordingly, the first sketch line (LS1) can completely penetrate the original glass (MSUB). Among the multiple spot beams of each of the sub-beams (SB1, SB2), two spot beams adjacent to each other in the extension direction can be positioned adjacent to the top and bottom surfaces of the original glass (MSUB). Accordingly, the second sketch line (LS2) and the third sketch line (LS3) may not completely penetrate the original glass (MSUB).

[0228] The processing depth (Dh1) of the original glass (MSUB) by the main beam (MB) may be greater than the processing depth (Dh2) of the original glass (MSUB) by the first sub-beam (SB1), and the processing depth (Dh2) of the original glass (MSUB) by the first sub-beam (SB1) may be greater than the processing depth (Dh3) of the original glass (MSUB) by the second sub-beam (SB2).

[0229] A display device (10) including a cover window (CW) according to the embodiments described above can be applied to various electronic devices (1). An electronic device (1) according to one embodiment includes the display device (10) including the cover window (CW) described above, and may further include a module or device having other additional functions in addition to the display device (10) including the cover window (CW).

[0230] FIG. 29 is a block diagram of an electronic device according to one embodiment.

[0231] Referring to FIG. 29, an electronic device (1) according to one embodiment may include a display module (11), a processor (12), a memory (13), and a power module (14).

[0232] The processor (12) may include at least one of a central processing unit (CPU), an application processor (AP), a graphic processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0233] The memory (13) may store data information necessary for the operation of the processor (12) or the display module (11). When the processor (12) executes an application stored in the memory (13), an image data signal and / or an input control signal are transmitted to the display module (11), and the display module (11) can process the received signal and output image information through a display screen.

[0234] The power module (14) may include a power supply module, such as a power adapter or battery device, and a power conversion module that converts the power supplied by the power supply module to generate power required for the operation of the electronic device (1).

[0235] At least one of each component of the electronic device (1) described above may be included in the display device (10) according to the embodiments described above. Additionally, some of the individual modules functionally included in one module may be included in the display device (10), while others may be provided separately from the display device (10). For example, the display device (10) may include a display module (11), and the processor (12), memory (13), and power module (14) may be provided in the form of other devices within the electronic device (1) other than the display device (10).

[0236] FIG. 30 is a schematic diagram of an electronic device according to various embodiments.

[0237] Referring to FIG. 30, various electronic devices (1) to which a display device (10) according to embodiments is applied may include not only image display electronic devices (1) such as a smartphone (1_1a), tablet PC (1_1b), laptop (1_1c), TV (1_1d), and desk monitor (1_1e), but also wearable electronic devices (1) including display modules such as smart glasses (1_2a), head-mounted display (1_2b), and smart watch (1_2c), and automotive electronic devices (1_3) including display modules such as a CID (Center Information Display) and room mirror display placed on the instrument panel, center fascia, and dashboard of a car.

[0238] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing the technical concept or essential features thereof. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0240] 1: Electronic device 10: Display device CW: Cover Window LD: Laser processing device (Manufacturing device for cover windows) LS: Sketch line MSUB: Director Glass LR: Light source BST: Beam Splitter OTD: Optical Delay DE1, DE2: First and second phase masks BC: Beam connection RLNS: Relay Lens OLNS: Objective lens FF: Focus area RLB: Primitive Laser Beam MB: Main Beam SB: Sub-beam CB: Combined beam

Claims

Claim 1 A light source that outputs a raw laser beam; a beam splitter that splits the raw laser beam into a main beam and at least one sub-beam; a first phase mask that diffracts the main beam to convert the shape of the main beam into a straight beam; a second phase mask that diffracts the sub-beam to convert the shape of the sub-beam into a dotted line beam including a plurality of spot beams; a beam combining unit that combines the main beam and the sub-beam to form a combined beam; and an objective lens that focuses the combined beam into a focal plane, wherein the beam splitter makes the extension direction of the polarization axis of the main beam and the polarization axis of the sub-beam different. Claim 2 A manufacturing apparatus for a cover window in which the polarization axis of the main beam and the polarization axis of the sub-beam are orthogonal to each other, in accordance with claim 1. Claim 3 A manufacturing apparatus for a cover window according to claim 1, further comprising an optical delayer disposed between the beam splitter and the first phase mask and between the beam splitter and the second phase mask, wherein the optical delayer delays the time when either the main beam or the sub-beam arrives at the beam coupling part. Claim 4 A manufacturing apparatus for a cover window in which the time delay range of the optical delayer in paragraph 3 is 1 ps to 10 ps. Claim 5 A manufacturing apparatus for a cover window according to claim 1, wherein the first phase mask has a shape in which concentric circles having the same center are arranged radially, and the second phase mask has a shape in which concentric circles having at least two different centers are arranged radially. Claim 6 A manufacturing apparatus for a cover window according to claim 5, wherein the at least two centers of the second phase mask include a first center and a second center, and the concentric circles having the first center and the concentric circles having the second center are divided symmetrically to the left and right with respect to a first straight line extending in one direction. Claim 7 In claim 1, the main beam and the sub-beam, respectively transformed by the first phase mask and the second phase mask, are a manufacturing apparatus for a cover window having a Bessel beam shape. Claim 8 In claim 1, the above-mentioned source laser beam is a Gaussian-shaped beam, and the device for manufacturing a cover window. Claim 9 A manufacturing apparatus for a cover window according to claim 1, wherein the numerical aperture of the objective lens is 0.4 or greater. Claim 10 A manufacturing apparatus for a cover window in which, in the first paragraph, the main beam and the sub-beam are spaced apart in a first direction at the focal plane. Claim 11 In item 10, a manufacturing apparatus for a cover window in which the main beam and the sub-beam extend in a second direction different from the first direction at the focal plane. Claim 12 In claim 11, the manufacturing apparatus for a cover window comprises a plurality of spot beams that are spaced apart from each other in the second direction, wherein the sub-beams each extend in the second direction. Claim 13 In claim 12, a manufacturing apparatus for a cover window in which the focal depth of the main beam in the second direction is greater than the focal depth of each of the plurality of spot beams. Claim 14 In claim 13, a manufacturing apparatus for a cover window in which the width of the main beam in the first direction and the width of the main beam in the first direction are 1 μm or less. Claim 15 A manufacturing apparatus for a cover window in which, in claim 12, the aspect ratio of the sub-beam is defined as the depth of focus in the second direction relative to the width in the first direction, and the aspect ratio of the sub-beam is 20 or more. Claim 16 A manufacturing apparatus for a cover window according to claim 1, wherein the beam intensity of the sub-beam is 30% to 80% of the beam intensity of the main beam. Claim 17 A method for manufacturing a cover window comprising: a step of forming a sketch line for forming a cover window by irradiating a laser beam onto a base glass; and a step of etching the cover window using an etching solution, wherein the sketch line includes a first sketch line and a second sketch line disposed inside the first sketch line, and the cover window is separated from the base glass by the first sketch line, and the etching solution penetrates into the interior of the cover window through the second sketch line. Claim 18 A method for manufacturing a cover window according to claim 17, wherein the first sketch line penetrates the original glass in the thickness direction, and the second sketch line extends from the upper and lower surfaces of the original glass in the internal direction of the original glass, and the length of the second sketch line is smaller than the thickness of the original glass. Claim 19 A method for manufacturing a cover window according to claim 17, wherein the sketch line includes a third sketch line positioned inwardly to the second sketch line, and the length of the third sketch line is shorter than the length of the second sketch line. Claim 20 An electronic device comprising: a cover window manufactured by a manufacturing device for a cover window of claim 1, and a display panel disposed below the cover window; a processor that provides a driving signal to the display device; and a power module that supplies power to the display device.

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