Deposition apparatus for powder base material for atomic layer deposition method

Abstract

The present invention relates to a deposition apparatus for a powder substrate for atomic layer deposition, and more specifically, to a deposition apparatus for a powder substrate for atomic layer deposition that can deposit a uniform thin film on the surface of a powder substrate by preventing aggregation of the powder substrate and evenly dispersing the powder substrate by rotating an internal chamber in which a powder substrate is mounted on the X-axis and Y-axis through a rotary support and a rotary drive unit. The present invention provides a deposition apparatus for a powder substrate for atomic layer deposition, characterized in that it comprises: an outer chamber having an internal receiving space and a heater for heating the interior to a predetermined temperature; an inner chamber provided inside the outer chamber, made of a porous material, and having a powder substrate mounted inside; a rotating support member provided inside the outer chamber and supporting the inner chamber rotatably on the X-axis and Y-axis; and a rotary drive member that rotates the inner chamber on the rotating support member around the X-axis and Y-axis to induce dispersion of the powder substrate.

Description

Technology Field

[0001] The present invention relates to a deposition apparatus for a powder substrate for atomic layer deposition that enables the formation of a functional thin film on the surface of a powder substrate through atomic layer deposition. Background Technology

[0002] Atomic Layer Deposition (ALD) is a type of Chemical Vapor Deposition (CVD) in which a precursor, which serves as fuel, and an oxidant, which is a substance for oxidation, are alternately injected onto a substrate to be deposited. However, an inert gas containing argon (Ar) and nitrogen (N2) is injected between the processes of injecting the precursor and the oxidant to prevent direct contact between the precursor and the oxidant.

[0003] This method induces a self-limiting reaction between the substrate, precursor, and oxidant, enabling the precise deposition of thin films on substrates with complex structures at the atomic layer level; consequently, it is widely used in the semiconductor and display fields.

[0004] Based on the advantage of being able to deposit uniform thin films on substrates with complex structures, this atomic layer deposition method is widely applied not only in the semiconductor and display fields but also in energy storage and conversion-related fields, including batteries, fuel cells, and hydrogen production.

[0005] Meanwhile, substrates used in energy storage and conversion fields have a shape that is completely different from flat substrates, such as wafers used in semiconductor and display fields.

[0006] In other words, while atomic layer deposition (ALD) can be directly applied to the semiconductor and display fields, in energy storage and conversion fields, applying ALD directly to deposit specific materials onto powder substrates leads to non-uniform deposition caused by aggregation between the powder substrates, and this non-uniform deposition results in other defects.

[0007] For example, if a specific material is deposited by directly applying atomic layer deposition to a battery electrode material in powder form, non-uniform deposition occurs due to aggregation caused by the powder, and the point where non-uniform deposition occurs can act as the starting point for battery degradation.

[0008] As described above, an atomic layer deposition apparatus has been devised in which an outer chamber rotates around a rotation axis and a plurality of reactors are installed to introduce powder substrates into the interior of the outer chamber, in order to resolve non-uniform deposition caused by the aggregation of powder substrates.

[0009] However, conventional primary layer deposition devices have difficulty resolving the aggregation of powder materials because the outer chamber rotates only in a single axial direction around the rotation axis, resulting in frequent instances where the dispersion of the powder material is not properly achieved.

[0010] Therefore, in order to uniformly deposit a specific material onto a powder substrate using atomic layer deposition, research and development of a deposition apparatus capable of maximizing the dispersion effect of the powder substrate is necessary. Prior art literature

[0011] Korean Patent Publication No. 10-2745249, published December 23, 2024. Korean Patent Publication No. 10-1876522, published July 9, 2018. The problem to be solved

[0012] The present invention was developed to resolve the aforementioned problems, and its purpose is to provide a deposition apparatus for a powder substrate for atomic layer deposition, wherein an internal chamber containing the powder substrate rotates around the X and Y axes to eliminate the aggregation phenomenon of the powder substrate and thereby uniformly disperse the powder substrate, so that a specific material can be uniformly deposited by performing atomic layer deposition on the powder substrate.

[0013] The objectives of the present invention are not limited to those mentioned above, and other unmentioned objectives may be clearly understood from the descriptions below and may be sufficiently included in the objectives of the present invention. means of solving the problem

[0014] A deposition apparatus for a powder substrate for an atomic layer deposition method according to the present invention for achieving the above objective may be configured to include: an outer chamber having an internal receiving space and a heater for heating the interior to a predetermined temperature; an inner chamber provided inside the outer chamber, made of a porous material, and having a powder substrate mounted inside; a rotating support member provided inside the outer chamber and supporting the inner chamber rotatably on the X-axis and Y-axis; and a rotary drive unit that rotates the inner chamber on the rotating support member around the X-axis and Y-axis to induce dispersion of the powder substrate. Effects of the invention

[0015] A deposition apparatus for a powder substrate for atomic layer deposition according to the present invention, with the above-described configuration, includes an inner chamber provided inside an outer chamber, the inner chamber being rotatably supported in a two-dimensional shape by a rotational support member, and a rotational drive unit that rotates the inner chamber around the X-axis and Y-axis. During the process of performing atomic layer deposition to deposit a thin film containing a specific material on a powder substrate, the inner chamber is rotated around the X-axis and Y-axis, thereby resolving the aggregation phenomenon of the powder substrate and evenly dispersing the powder substrate to deposit a uniform thin film on the surface of the powder substrate. Brief explanation of the drawing

[0016] FIG. 1 is an overall configuration diagram illustrating a deposition apparatus for a powder substrate for atomic layer deposition according to a preferred embodiment of the present invention. FIG. 2 is a perspective view illustrating an outer chamber, an inner chamber, a rotating support, and a rotating drive unit of a deposition apparatus for a powder substrate for atomic layer deposition according to a preferred embodiment of the present invention. Figure 3 is a cross-sectional view along the line 'A-A' of Figure 2. Figure 4 is a cross-sectional view along the line 'B-B' of Figure 2. Specific details for implementing the invention

[0017] The present invention relates to a deposition apparatus for a powder substrate that enables the deposition of a thin film on a powder substrate using atomic layer deposition.

[0018] In particular, a major feature of the deposition apparatus for a powder substrate for atomic layer deposition according to the present invention is that it enables the deposition of a uniform thin film on a powder substrate by resolving the aggregation phenomenon of the powder substrate during the process of performing atomic layer deposition.

[0019] These features can be achieved by a configuration including an outer chamber equipped with a heater and supplied with inert gas and source gas, an inner chamber equipped inside the outer chamber and having a powder base material mounted inside, a rotational support member that supports the inner chamber to rotate around the X and Y axes inside the outer chamber, and a rotational drive unit that pulls the inner chamber by magnetic force to rotate it around the X and Y axes to eliminate the aggregation phenomenon of the powder base material.

[0021] Hereinafter, a deposition apparatus for a powder substrate for an atomic layer deposition method according to a preferred embodiment of the present invention will be described in detail with reference to the attached drawings.

[0022] A deposition apparatus (100) for a powder substrate for atomic layer deposition according to a preferred embodiment of the present invention may be composed of an outer chamber (200), an inner chamber (300), a rotating support (400), a rotating drive unit (500), a source gas supply unit (600), an inert gas supply unit (700), a pressure control unit (800), and a control unit (900), as shown in FIG. 1.

[0024] First, the outer chamber (200) may be formed in a spherical shape and may have a receiving space inside.

[0025] And an external chamber (200) may be equipped with a heater (not shown) to heat the interior to a predetermined temperature so that an atomic layer deposition method can be performed.

[0027] Next, the inner chamber (300) is accommodated inside the outer chamber (200), and a powder base material can be mounted inside.

[0028] And the inner chamber (300) can be formed in a spherical shape corresponding to the shape of the outer chamber (200) so that it can rotate smoothly in a two-dimensional form based on the inner center of the outer chamber (200).

[0029] At this time, when the inner chamber (300) supplies source gas and inert gas into the outer chamber (200) to deposit a thin film on a powder substrate by performing an atomic layer deposition method, the source gas and inert gas can be injected into the inner chamber (300).

[0030] To this end, the inner chamber (300) may be made of a porous material having pores (310) that are relatively smaller than the particles of the powder base material and have a size through which the source gas and inert gas can pass, so that the powder base material mounted inside is not leaked.

[0032] Next, the rotational support member (400) is provided inside the outer chamber (200) and can support the inner chamber (300) so as to be rotatable around the X-axis and Y-axis inside the outer chamber (200).

[0033] That is, the rotating support (400) can stably support the inner chamber (300) so as to be rotatable on the X-axis and Y-axis in order to eliminate the aggregation phenomenon of the powder base material mounted inside the inner chamber (300) and deposit a uniform thin film on the surface of the powder base material.

[0034] To this end, the rotational support member (400) may be composed of a pair of first rotational support shafts (410) that connect one side and the other side of the outer surface of the inner chamber (300) along the X-axis direction to one side and the other side of the inner surface of the outer chamber (200), respectively, a rotational ring (420) that is rotatably connected to the ends of the pair of first rotational support shafts via a first bearing (421), a pair of second rotational support shafts (430) that connect one side and the other side of the inner surface of the rotational ring (420) along the Y-axis direction, and a rotational bar (440) that connects the ends of the pair of second rotational support shafts (430) to one side and the other side of the outer surface of the inner chamber (300) via a second bearing (441), respectively.

[0035] Accordingly, the inner chamber (300) can be supported rotatably on the X-axis with respect to the first rotational support axis (410) of the rotational support member (400), and can be supported rotatably on the Y-axis with respect to the second rotational support axis (430) of the rotational support member (400).

[0037] Next, the rotary drive unit (500) is provided in the outer chamber (200) and the inner chamber (300) and can rotate the inner chamber (300) around the X-axis and Y-axis inside the outer chamber (200).

[0038] That is, the rotary drive unit (500) can rotate the inner chamber (300), which is rotatably supported on the X-axis and Y-axis by the rotary support member (400) inside the outer chamber (200), around the X-axis and Y-axis in order to resolve the aggregation phenomenon of the powder base material mounted inside the inner chamber (300) and deposit a uniform thin film on the surface of the powder base material.

[0039] At this time, the rotary drive unit (500) can rotate the inner chamber (300) around the X-axis and Y-axis on the rotary support member (400) by using the attractive force acting between the first magnetic body fixedly provided in the inner chamber (300) and the second magnetic body, which is movably provided in the outer chamber (200) along the X-axis and Y-axis and has a polarity opposite to that of the first magnetic body, while pulling the inner chamber (300) according to the movement of the second magnetic body.

[0040] To this end, the rotary drive unit (500) may include a first magnetic body (510) fixed on the X-axis on one side of the inner chamber (300) as shown in FIGS. 2 to 4, a first magnetic body (520) fixed on the Y-axis on the other side of the inner chamber (300), a first guide rail (530) installed along the X-axis direction on one side of the outer surface of the outer chamber, and a second guide rail (540) provided along the Y-axis direction on the other side of the outer surface of the outer chamber (200).

[0041] And the rotary drive unit (500) may further include a second a magnetic body (550) that is movably provided along a first guide rail (530) and has an attractive force acting between it and a first a magnetic body (510), a second b magnetic body (560) that is movably provided along a second guide rail (540) and has an attractive force acting between it and a first b magnetic body (520), a first driving means (570) that moves the second a magnetic body (550) along the first guide rail (530), and a second driving means (580) that moves the second b magnetic body (560) along the second guide rail (540).

[0042] However, the seconda magnetic body (550) and the secondb magnetic body (560) can be fixed to the inside of the first slider (551) and the second slider (561) which are movable along the first guide rail (530).

[0043] At this time, the first driving means (570) may be composed of a pair of first traction wires (571) each having one end connected to one side and the other side of the second magnetic body (550), a pair of first driving motors (572) each installed at one end and the other end of the first guide rail (530), and a pair of first winding rollers (573) connected to the driving shafts of the pair of first driving motors (572) and having the other ends of the pair of first traction wires (571) each wound.

[0044] And the second driving means (580) may be composed of a pair of second traction wires (581) each having one end connected to one side and the other side of the second magnetic body (560), a pair of second driving motors (582) each installed at one end and the other end of the second guide rail (540), and a pair of second winding rollers (583) each connected to the driving shafts of the pair of second driving motors (582) and having the other end of the pair of second traction wires (581) each wound.

[0045] That is, the rotary drive unit (500) can move the seconda magnetic body (550) left and right along the first guide rail (530) along the X-axis by performing the operation of one first traction wire (571) being wound or unwound on one first winding roller (573) and the other first traction wire (571) being unwound or wound on the other first winding roller (573) according to the mutual interlocking of a pair of first drive motors (572).

[0046] Then, the first magnetic body (510) moves left and right along the X-axis in the same way as the second magnetic body (550), and the inner chamber (300) rotates left and right around the Y-axis, thereby dispersing the powder base material mounted inside.

[0047] And the rotary drive unit (500) can move the second magnetic body (560) up and down along the second guide rail (540) on the Y-axis while performing the operation of one second traction wire (581) being wound or unwound on one second winding roller (583) and the other second traction wire (581) being unwound or wound on the other second winding roller (583) according to the mutual interlocking of a pair of second drive motors (582).

[0048] Then, the first magnetic body (510) moves up and down along the Y-axis in the same way as the second magnetic body (560), and the inner chamber (300) rotates up and down around the X-axis, thereby dispersing the powder base material mounted inside.

[0049] Accordingly, the rotary drive unit (500) can prevent the aggregation of the powder base material mounted inside the inner chamber (300) by rotating the inner chamber (300) up and down on the Y-axis according to the mutual interaction of the first drive motor (572) forming a pair, or by rotating the inner chamber (300) left and right on the X-axis according to the mutual interaction of the second drive motor (582) forming a pair.

[0050] Here, the rotary drive unit (500) may further include a first Hall sensor and a second Hall sensor that are provided on the inner surface of the outer chamber (200) to control the rotational movement of the inner chamber (300) and detect the positions of the first a magnetic body (510) and the first b magnetic body (520), respectively.

[0051] Then, the rotary drive unit (500) can rotate the inner chamber (300) to a predetermined angle while accurately determining the rotation angle of the inner chamber (300) through the positions of the first a magnetic body (510) and the first b magnetic body (520) detected by the first Hall sensor and the second Hall sensor, respectively.

[0053] Next, the source gas supply unit (600) can selectively supply a primary source gas containing a precursor and a secondary source gas containing an oxidizing agent to the interior of the outer chamber (200).

[0054] To this end, the source gas supply unit (600) may include a primary source gas storage tank (610) in which primary source gas is stored, a primary source gas supply line (620) for supplying primary source gas stored in the primary source gas storage tank (610), a secondary source gas storage tank (630) in which secondary source gas is stored, and a secondary source gas supply line (640) for supplying secondary source gas stored in the secondary source gas storage tank (630).

[0055] And the source gas supply unit (600) may include a primary source gas control valve (650) connected to the primary source gas supply line (620) to control the supply of primary source gas, and a secondary source gas control valve (660) connected to the secondary source gas supply line (640) to control the supply of secondary source gas.

[0056] In addition, the primary source gas supply line (620) and the secondary source gas supply line (640) are connected to a gas supply pipe (670) that communicates with the interior of the outer chamber (200), so that the primary source gas or the secondary source gas can be finally supplied into the interior of the outer chamber (200) through the gas supply pipe (670).

[0057] At this time, the primary source gas shut-off valve (650) and the secondary source gas shut-off valve (660) are each configured as electronic valves, and the opening and closing operation can be controlled so that the primary source gas and the secondary source gas are supplied or stopped according to a control signal applied from the outside.

[0058] That is, the source gas supply unit (600) can supply the primary source gas or the secondary source gas into the interior of the outer chamber (200) and inject it into the interior of the inner chamber (300) as the opening and closing operation of the primary source gas shut-off valve (650) and the secondary source gas shut-off valve (660) is determined according to a control signal.

[0060] Next, the inert gas supply unit (700) can supply inert gas into the outer chamber (200) so that the inert gas is injected into the interior of the inner chamber (300) and acts on the surface of the powder base material mounted inside the inner chamber (300).

[0061] To this end, the inert gas supply unit (700) may include an inert gas storage tank (710) in which inert gas is stored, an inert gas supply line (720) for supplying inert gas stored in the inert gas storage tank (710), and an inert gas control valve (730) connected to the inert gas supply line (720) to control the supply of inert gas.

[0062] And the inert gas supply line (720) is connected to a gas supply pipe (670) that communicates with the interior of the outer chamber (200), so that inert gas can be finally supplied into the interior of the outer chamber (200) through the gas supply pipe (670).

[0063] At this time, the inert gas shut-off valve (730) is configured as an electronic valve, and the opening and closing operation can be controlled to supply or stop supplying inert gas according to a control signal applied from the outside.

[0064] That is, the inert gas supply unit (700) can supply inert gas into the interior of the outer chamber (200) and inject it into the interior of the inner chamber (300) as the opening and closing operation of the inert gas shut-off valve (730) is determined according to a control signal.

[0066] Next, the pressure control unit (800) can control the internal pressure of the outer chamber (200) so that the atomic layer deposition method can be carried out smoothly.

[0067] That is, the pressure control unit (800) adjusts the internal pressure of the outer chamber (200) to correspond to pressure conditions corresponding to the individual processes when performing individual processes for atomic layer deposition, so that the injection and discharge of source gas and the injection and discharge of inert gas can be carried out smoothly.

[0068] To this end, the pressure regulating unit (800) may include a pressure regulating pipe (810) that communicates the interior of the outer chamber (200) with the external space, a pump (820) connected to the pressure regulating pipe (810) to apply pressure, and an opening / closing valve (830) connected to the end of the pressure regulating pipe (840).

[0069] At this time, the opening / closing valve (830) is configured as an electronic valve, and the opening / closing operation can be controlled in conjunction with the pump (820) according to a control signal applied from the outside.

[0071] Finally, the control unit (900) can control the operation of the outer chamber (200), the rotary drive unit (500), the source gas supply unit (600), the inert gas supply unit (700), and the pressure control unit (800) so as to perform an atomic layer deposition method.

[0072] That is, the control unit (900) can control the operation of the heater of the outer chamber (200), the first drive motor (572) and the second drive motor (582) of the rotary drive unit (500), the first source gas shut-off valve (650) and the second source gas shut-off valve (660) of the source gas supply unit (600), the inert gas shut-off valve (730) of the inert gas supply unit (700), and the pump (820) and the pressure control valve (830) of the pressure control unit (800), respectively, in accordance with a predetermined control sequence for performing atomic layer deposition.

[0073] To this end, the control unit (900) may be composed of a process control unit (910) that generates a control signal to perform individual processes for atomic layer deposition, and a rotation control unit (920) that generates a control signal to rotate the inner chamber as needed during the process of performing individual processes.

[0074] That is, the process control unit (910) can generate control signals to control the operation of the heater, the primary source gas shut-off valve (650), the secondary source gas shut-off valve (660), the inert gas shut-off valve (730), the pump (820), and the pressure regulating valve (830).

[0075] And the rotation control unit (920) can generate control signals to control the operation of the first drive motor (572) and the second drive motor (582).

[0076] Then, the internal temperature and pressure of the outer chamber (200) are adjusted to correspond to predetermined temperature and pressure conditions, and a primary source gas, a secondary source gas, and an inert gas are supplied to the inside of the outer chamber (200) in a predetermined order, thereby allowing a functional thin film containing a specific material to be deposited on the surface of a powder substrate mounted inside the inner chamber (300).

[0077] And in the process of supplying the primary source gas, secondary source gas, and inert gas into the interior of the outer chamber (200) in a predetermined order, the inner chamber (300) is supported by the rotating support member (400) and rotates around the X-axis or around the Y-axis, thereby evenly dispersing the powder base material and preventing aggregation.

[0079] The above-described embodiments are merely exemplary, and various other modified embodiments are possible therefrom for those skilled in the art.

[0080] Therefore, the true technical scope of protection of the present invention should include not only the above embodiments but also other embodiments that are variously modified according to the technical concept of the invention described in the following claims. Explanation of the symbols

[0081] 100: Deposition apparatus for powder substrates for atomic layer deposition 200: External chamber 300: Internal chamber 310: Qi Gong 400: Rotating support 410: First rotational support shaft 420: Rotating ring 421: 1st bearing 430: Second rotary support shaft 440: Rotating bar 441: Second bearing 500: Rotary drive unit 510: 1a-magnetic body 520: 1b magnetic material 530: 1st guide rail 540: Second guide rail 550: 2a-magnetic body 551: 1st slider 560: IIb magnetic material 561: 2nd slider 570: First driving means 571: 1st towing wire 572: 1st drive motor 573: 1st winding roller 580: Second driving means 581: Second towing wire 582: Second drive motor 583: 2nd winding roller 600: Source gas supply unit 610: Primary source gas storage tank 620: Primary source gas supply line 630: Secondary source gas storage tank 640: Secondary source gas supply line 650: Primary source gas shut-off valve 660: Secondary source gas shut-off valve 670: Gas supply pipe 700: Inert gas supply unit 710: Inert gas storage tank 720: Inert gas supply line 730: Inert gas shut-off valve 800: Pressure regulator 810: Pressure regulating pipe 820: Pump 830: Shut-off valve 900: Control unit 910: Process Control Unit 920: Rotation control unit

Claims

Claim 1 A deposition apparatus for a powder substrate for an atomic layer deposition method, characterized by comprising: an outer chamber having an internal receiving space and equipped with a heater for heating the interior to a predetermined temperature; an inner chamber provided inside the outer chamber, made of a porous material, and having a powder substrate mounted inside; a rotary support provided inside the outer chamber and supporting the inner chamber rotatable on the X-axis and Y-axis; and a rotary drive unit that rotates the inner chamber on the rotary support around the X-axis and Y-axis to induce dispersion of the powder substrate. Claim 2 A deposition apparatus for a powder substrate for atomic layer deposition according to claim 1, wherein the rotary drive unit comprises a pair of first magnetic bodies fixedly provided on the X-axis and Y-axis respectively in the inner chamber, and a pair of second magnetic bodies movably provided along the X-axis and Y-axis directions respectively in the outer chamber and having polarity opposite to that of the first magnetic bodies, and wherein the inner chamber is tractioned by the attractive force acting between the first magnetic bodies as the second magnetic bodies move, thereby causing the second magnetic bodies to rotate in a two-dimensional form around the X-axis and Y-axis on the rotary support. Claim 3 In claim 2, the rotary drive unit comprises: a first magnetic body (1a) fixed on the X-axis on one side of the inner chamber; a first magnetic body (1b) fixed on the Y-axis on the other side of the inner chamber; a first guide rail provided along the X-axis direction on one side of the outer surface of the outer chamber; a second guide rail provided along the Y-axis direction on the other side of the outer surface of the outer chamber; a second magnetic body (2a) provided to be movable along the first guide rail and having an attractive force acting between it and the first magnetic body (1a); a second magnetic body (2b) provided to be movable along the second guide rail and having an attractive force acting between it and the first magnetic body (1b); a first driving means for moving the second magnetic body (2a) along the first guide rail; and a second driving means for moving the second magnetic body (2b) along the second guide rail; characterized in that it comprises a deposition apparatus for a powder substrate for an atomic layer deposition method. Claim 4 A deposition apparatus for a powder substrate for atomic layer deposition, characterized in that, in paragraph 3, it further comprises: a Hall sensor provided in the outer chamber and detecting the positions of the first magnetic body a and the first magnetic body b, respectively; and a rotary controller that controls the operation of the first driving means and the second driving means according to the positions of the first magnetic body a and the first magnetic body b detected by the Hall sensor. Claim 5 A deposition apparatus for a powder substrate for atomic layer deposition according to claim 3, wherein the rotational support member comprises: a pair of first rotational support shafts connecting one side and the other side of the outer surface of the inner chamber along the X-axis direction to one side and the other side of the inner surface of the outer chamber; a rotating ring having one side and the other side respectively rotatably connected to the ends of the pair of first rotational support shafts; a pair of second rotational support shafts connected along the Y-axis direction to one side and the other side of the inner surface of the rotating ring; and a rotating bar having the ends of the pair of second rotational support shafts rotatably connected to one side and the other side of the inner chamber respectively. Claim 6 A deposition apparatus for a powder substrate for atomic layer deposition according to claim 1, further comprising: a source gas supply unit for selectively supplying a primary source gas containing a precursor and a secondary source gas containing an oxidizing agent into the interior of the outer chamber; an inert gas supply unit for supplying an inert gas into the interior of the outer chamber; and a pressure control unit for setting the internal pressure of the outer chamber to a predetermined pressure condition. Claim 7 A deposition apparatus for a powder substrate for atomic layer deposition according to claim 6, wherein the source gas supply unit comprises a plurality of source gas tanks in which source gas is stored, a source gas supply line connected to each of the source gas tanks to supply the source gas into the interior of the outer chamber, and a source gas control valve connected to the source gas supply line to control the supply of the source gas. Claim 8 A deposition apparatus for a powder substrate for atomic layer deposition according to claim 6, wherein the inert gas supply unit comprises an inert gas tank filled with the inert gas, an inert gas supply line connected to the inert gas tank to supply the inert gas into the interior of the outer chamber, and an inert gas control valve connected to the inert gas supply line to control the supply of the inert gas. Claim 9 A deposition apparatus for a powder substrate for atomic layer deposition, characterized in that, in claim 6, the pressure regulating unit comprises a pressure regulating pipe that communicates the interior of the outer chamber with an external space, a pump connected to the pressure regulating pipe, and an opening / closing valve connected to the end of the pressure regulating pipe.

Images