Rinse composition and manufacturing method of device using the same

Abstract

The present invention relates to a rinse composition comprising a primary alcohol having 2 to 6 carbon atoms, a glycerol ether compound, a diol compound, and water, wherein the glycerol ether compound comprises a compound represented by Chemical Formula 1 and the diol compound comprises a compound represented by Chemical Formula 2, and wherein the rinse composition can secure excellent cleaning performance for resist residues while preventing damage to the pattern, such as pattern collapse, when performing a rinse process on a fine pattern formed in a photoresist process, and a method for manufacturing a device using the same.

Description

Technology Field

[0001] The present invention relates to a rinse composition and a method for manufacturing a device using the same. Background Technology

[0003] In semiconductor processes, there is a process for forming patterns using photolithography as a process used to form fine structures, specifically based on the change in polarity and crosslinking reaction of a polymer caused by a photoreaction. In particular, the pattern formation utilizes the characteristic of the change in solubility of a photosensitive resin composition in a solvent, such as an alkaline aqueous solution, after exposure to light.

[0004] Recently, as the aspect ratio of patterns increases to form microstructures in semiconductor processes, pattern collapse occurs when the exposed area is generally washed with deionized water and dried after the development process in which the exposed area is developed with a developer, due to the capillary force of water droplets pulling on the micro-pattern during the drying process. To solve this problem, a process is being applied to reduce pattern defects occurring during the cleaning and drying process by using a rinsing step with a composition having lower surface tension after treatment with a developer.

[0005] In addition, it has been reported that removing development residues that were not completely removed by the developer during the rinsing step after development increases the resolution of the formed fine pattern, thereby improving the overall process margin of the photolithography process. Consequently, compositions used in the rinsing step are required to have appropriate cleaning power to remove residues from the bottom surface of the photoresist pattern. However, approaching this from this perspective can lead to problems where the photoresist pattern, composed of organic compounds, particularly polymer compounds, dissolves and deforms the pattern itself. Therefore, it is important that the rinsing composition does not cause damage to the photoresist pattern.

[0006] Japanese Patent Publication No. 2023-147904 discloses a cleaning agent composition for textile products, but there is a limitation in that when a rinsing process is performed using the composition, it causes damage to the photoresist pattern and also causes the pattern to collapse. Prior art literature

[0008] Japanese Published Patent No. 2023-147904 The problem to be solved

[0009] The purpose of the present invention is to provide a rinse composition that can secure excellent cleaning performance for resist residues while preventing damage to the pattern, such as the collapse of the pattern, when performing a rinse process on a fine pattern formed in a photoresist process, in order to improve the aforementioned conventional technical problems.

[0010] In addition, the present invention aims to provide a method for manufacturing a device using the rinse composition.

[0011] However, the problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by a person skilled in the art from the description below. means of solving the problem

[0013] To achieve the above objective, the present invention provides a rinse composition characterized by comprising a primary alcohol having 2 to 6 carbon atoms, a glycerol ether compound, a diol compound, and water, wherein the glycerol ether compound comprises a compound represented by the following chemical formula 1, and the diol compound comprises a compound represented by the following chemical formula 2.

[0014] [Chemical Formula 1]

[0015]

[0016] In the above chemical formula 1,

[0017] R1 is a straight-chain or branched-chain alkyl group having 2 to 6 carbon atoms.

[0018] [Chemical Formula 2]

[0019]

[0020] In the above chemical formula 2,

[0021] R2 is hydrogen, a halogen group, or a straight-chain or branched-chain alkyl group having 1 to 3 carbon atoms.

[0022] The weight ratio of the glycerol ether compound to the diol compound may be glycerol ether compound:diol compound = 15:1 to 20:1.

[0023] The logP value of the primary alcohol having 2 to 6 carbon atoms may be 0 to 1.5.

[0024] The primary alcohol having 2 to 6 carbon atoms may be included in an amount of 0.05 to 25 weight percent based on the total weight of the rinse composition.

[0025] The primary alcohol having 2 to 6 carbon atoms may be included in an amount of 0.1 to 20 weight percent based on the total weight of the rinse composition.

[0026] The above glycerol ether compound may be included in an amount of 0.00375 to 2 weight percent based on the total weight of the rinse composition.

[0027] The above diol compound may be included in an amount of 0.00025 to 0.1 weight% based on the total weight of the rinse composition.

[0028] The line width of the photoresist pattern to be rinsed using the above rinse composition may be 200 nm or less.

[0029] In addition, the present invention comprises the step of forming a photoresist film on a substrate;

[0030] Step of exposing the above photoresist film;

[0031] A step of developing the above-mentioned exposed photoresist pattern to form a photoresist pattern; and

[0032] A method for manufacturing a device is provided, comprising the step of rinsing the photoresist pattern using the rinse composition. Effects of the invention

[0034] The present invention can provide a rinse composition that can secure excellent cleaning performance for resist residues while preventing damage to the pattern, such as the collapse of the pattern, when performing a rinse process on a fine pattern formed in a photoresist process.

[0035] In addition, the present invention can provide a method for manufacturing a device using the rinse composition. Brief explanation of the drawing

[0037] Figure 1 is a verification result when there is no change in the surface of the pattern when evaluating the degree of damage to the photoresist pattern. Figure 2 is the result of verification when damage occurs on the surface of the pattern when evaluating the degree of damage to the photoresist pattern. Specific details for implementing the invention

[0038] The present invention relates to a rinse composition and a method for manufacturing a device using the same, characterized in that the rinse composition comprises a primary alcohol having 2 to 6 carbon atoms, a glycerol ether compound, a diol compound, and water, wherein the glycerol ether compound comprises a compound represented by Chemical Formula 1 and the diol compound comprises a compound represented by Chemical Formula 2.

[0039] The present invention was completed by experimentally confirming that a rinse composition can be provided that ensures excellent cleaning performance for resist residues while preventing damage to the pattern, such as pattern collapse, when performing a rinse process on a fine pattern formed in a photoresist process by including a glycerol ether compound and a diol compound together with a primary alcohol having 2 to 6 carbon atoms. Specifically, the line width of the photoresist pattern to be rinsed using the rinse composition may be 200 nm or less, preferably 180 nm or less.

[0041] Hereinafter, each component constituting the rinse composition of the present invention will be described in detail. However, the present invention is not limited by these components.

[0042] As used in this specification, “comprises” and / or “comprising” are used in the sense that they do not exclude the presence or addition of one or more other components other than the mentioned components.

[0044] < Rinse Composition >

[0045] The rinse composition of the present invention comprises a primary alcohol having 2 to 6 carbon atoms, a glycerol ether compound, a diol compound, and water.

[0047] Primary alcohols having 2 to 6 carbon atoms

[0048] The primary alcohol having 2 to 6 carbon atoms of the present invention can perform the role of preventing pattern collapse or damage to the pattern by removing residues that the developer failed to remove after developing the photoresist, while controlling the surface tension of the rinse composition of the present invention and the contact angle at the interface. It is preferable to include the primary alcohol having 2 to 6 carbon atoms, as including an alcohol having 7 or more carbon atoms in the rinse composition reduces solubility in the rinse composition, causing it to exist in the form of particles within the composition, which can act as particles during the rinsing process and cause problems such as damage to the pattern.

[0049] The types of primary alcohols having 2 to 6 carbon atoms are not particularly limited, and examples include ethanol, 1-propanol, 2-butanol, 1-pentanol, 1-hexanol, 1-methoxy-propanol, 1-ethoxy-propanol, 1-propoxy-propanol, etc., and one or more selected from these may be used.

[0050] The primary alcohol having 2 to 6 carbon atoms is preferably of a logP value, which is a partition coefficient for the solute and the organic compound (based on 1-octanol), being 0 to 1.5 in order to ensure the residue removal performance of the rinse composition, but is not limited thereto.

[0051] The primary alcohol having 2 to 6 carbon atoms may be included in an amount of 0.05 to 25 weight%, preferably 0.1 to 20 weight%, and most preferably 0.5 to 10 weight% based on the total weight of the rinse composition. If the primary alcohol having 2 to 6 carbon atoms is included in an amount less than the above range, pattern collapse may occur or it may be difficult to expect a sufficient residue removal effect. If it is included in an amount exceeding the above range, it may dissolve the residue as well as the film of the resist forming the pattern, causing damage to the resist or lowering the residue rate, which may result in a problem where it is difficult to secure a high aspect ratio of the pattern.

[0053] Glycerol ether compound

[0054] The glycerol ether compound of the present invention can perform the role of preventing damage such as pattern collapse and / or damage to the pattern by controlling the surface tension of the rinse composition of the present invention and the contact angle at the interface.

[0055] Specifically, if the rinse composition contains an excess amount of the primary alcohol having 2 to 6 carbon atoms, problems such as damage to the coating film of the resist forming the pattern may occur. However, it is preferable to include the glycerol ether compound in the rinse composition so that the pattern does not collapse and / or damage to the pattern can be controlled even when the primary alcohol having 2 to 6 carbon atoms is included in a small amount. Since there is a limit to controlling the contact angle at the interface when only the glycerol ether compound is included in the rinse composition, it is preferable to include it together with the primary alcohol having 2 to 6 carbon atoms.

[0056] The above glycerol ether compound is characterized by including a compound represented by the following chemical formula 1.

[0057] [Chemical Formula 1]

[0058]

[0059] In the above chemical formula 1,

[0060] R1 is a straight-chain or branched-chain alkyl group having 2 to 6 carbon atoms.

[0061] It is preferable to include the compound represented by Chemical Formula 1 as the glycerol ether compound in the above-mentioned form, in that the compound has a structure having a hydrophilic head and a hydrophobic tail within the molecule and acts on the liquid interface to lower surface tension, and the lowered surface tension can reduce the capillary force that pulls and knocks down the pattern, thereby providing a preventive effect to prevent the excellent pattern from falling over and / or damage to the pattern during the rinsing process, even when the photoresist pattern is a fine pattern with a high aspect ratio.

[0062] In the compound represented by the above chemical formula 1, if the number of carbon atoms in R1 is 7 or more, the solubility in the rinse composition decreases, and it exists in the form of particles within the composition. In this respect, it is preferable that it be a straight-chain or branched-chain alkyl group having 2 to 6 carbon atoms, as it can act as particles during the rinse process and cause damage such as damage to the pattern.

[0063] Examples of compounds represented by the above chemical formula 1 include butyl glycerol ether, hexyl glycerol ether, pentyl glycerol ether, etc., and one or more selected from these may be used, but are not limited thereto.

[0064] The above glycerol ether compound may be included in an amount of 0.00375 to 2% by weight, preferably 0.005 to 1.5% by weight, and most preferably 0.095 to 1.2% by weight, based on the total weight of the rinse composition. If the above glycerol ether compound is included in an amount less than the above range, the surface tension of the rinse composition and the contact angle at the interface cannot be sufficiently controlled, causing the pattern to collapse; if it is included in an amount exceeding the above range, damage to the resist may occur or the residual film rate may be lowered, which may result in a problem where it is difficult to secure a high aspect ratio of the pattern.

[0066] diol compounds

[0067] The diol compound of the present invention refers to a compound containing two hydroxyl groups within a molecule, and the diol compound may be included to increase the solubility of the glycerol ether compound in the rinse composition. Specifically, it is desirable to include the glycerol ether compound and the diol compound in a weight ratio of 10:1 to 25:1, preferably 15:1 to 20:1, in order to increase the solubility of the glycerol ether compound. If the weight ratio falls outside this range, the solubility of the glycerol ether compound in the rinse composition decreases, causing it to exist in the form of particles within the composition. This is undesirable because it can act as particles during the rinse process, potentially causing damage to the pattern.

[0068] The above diol compound is characterized by including a compound represented by the following chemical formula 2 in order to secure solubility in the rinse composition and increase the solubility of the glycerol ether compound in the rinse composition.

[0069] [Chemical Formula 2]

[0070]

[0071] In the above chemical formula 2,

[0072] R2 is hydrogen, a halogen group, or a straight-chain or branched-chain alkyl group having 1 to 3 carbon atoms.

[0073] In the compound represented by Chemical Formula 2 above, when R2 is a straight-chain or branched-chain alkyl group, if the number of carbon atoms is 4 or more, the solubility in the rinse composition decreases, causing it to exist in the form of particles within the composition. This acts as a particle during the rinse process, causing damage such as damage to the pattern, or remains as a residue on the pattern after the rinse process, affecting the reliability of the pattern. Therefore, it is preferable that it be a straight-chain or branched-chain alkyl group having 1 to 3 carbon atoms.

[0074] Examples of compounds represented by the above chemical formula 2 include 3-methyl,1,2propanediol, 3-chloro,1,2propanediol, 1,2butanediol, etc., and one or more selected from these may be used.

[0075] The above diol compound may be included in an amount of 0.00025 to 0.1% by weight, preferably 0.00025 to 0.075% by weight, and most preferably 0.00025 to 0.067% by weight, based on the total weight of the rinse composition. If the above diol compound is included in an amount less than the above range, the solubility of the glycerol ether compound cannot be sufficiently increased, and if it is included in an amount exceeding the above range, the diol compound may not be completely dissolved and may exist in the form of particles within the rinse composition, which may cause problems affecting reliability during the rinse process.

[0077] water

[0078] The rinse composition of the present invention comprises water in addition to a primary alcohol having 2 to 6 carbon atoms, a glycerol ether compound, and a diol compound. The water is not particularly limited, but it is preferable to use deionized water, and it is preferable to use water for semiconductor processes. It may be preferable for the water to have a resistivity of 18 MΩ / cm or higher.

[0079] The above water may be included as a remainder with respect to 100% by weight of the total rinse composition. The remainder refers to the remainder such that the total weight of the composition, including the essential components and other components included in the rinse composition of the present invention, becomes 100% by weight.

[0081] < Method for manufacturing the device >

[0082] In addition, the present invention provides a method for manufacturing a device using the rinse composition described above.

[0083] The method of manufacturing the above device is not particularly limited, provided that the device can be manufactured according to a known method of manufacturing a device, except for using a rinse composition according to the present invention.

[0084] In one embodiment of the present invention, the method for manufacturing the device is,

[0085] A step of forming a photoresist film on a substrate;

[0086] Step of exposing the above photoresist film;

[0087] A step of developing the above-mentioned exposed photoresist pattern to form a photoresist pattern; and

[0088] The method includes the step of rinsing the photoresist pattern using the rinse composition described above.

[0089] In addition, the step of drying the rinsed photoresist pattern may be further included.

[0091] The present invention will be explained in more detail below through examples.

[0092] However, the following examples are intended to further illustrate the invention and do not limit the scope of the invention. The following examples may be appropriately modified or changed by those skilled in the art within the scope of the invention.

[0093] Additionally, "%" and "parts" indicating content below are based on weight unless otherwise specified.

[0095] <Examples and Comparative Examples>

[0096] Examples 1 to 24 and Comparative Examples 1 to 6: Preparation of rinse compositions

[0097] Rinse compositions of Examples 1 to 24 and Comparative Examples 1 to 6 were prepared according to the composition and content of Table 1 below.

[0099] Rinse composition (weight%) alcohol Glycerol ether compound Dior water A-1 A-2 A-3 A-4 A-5 A-6 B-1 B-2 B-3 B-4 C-1 C-2 C-3 Example 1 10 　 　 　 　 0.095 　 　 　 0.005 　 　 Remaining amount Example 2 　 10 　 　 　 0.095 　 　 　 0.005 　 　 Remaining amount Example 3 　 　 0.5 　 　 0.095 　 　 　 0.005 　 　 Remaining amount Example 4 0.05 　 　 　 　 0.095 　 　 　 0.005 　 　 Remaining amount Example 5 0.1 　 0.1 　 　 0.095 　 　 　 0.005 　 　 Remaining amount Example 6 20 　 　 　 　 0.095 　 　 　 0.005 　 　 Remaining amount Example 7 25 　 　 　 　 0.095 　 　 　 0.005 　 　 Remaining amount Example 8 　 　 0.5 　 　 　 2.0 　 　 0.1 　 　 Remaining amount Example 9 　 　 0.5 　 　 　 1.5 　 　 0.075 　 　 Remaining amount Example 10 　 　 0.5 　 　 　 1 　 　 0.05 　 　 Remaining amount Example 11 　 　 0.5 　 　 　 0.5 　 　 0.025 　 　 Remaining amount Example 12 　 　 0.5 　 　 　 0.1 　 　 0.005 　 　 Remaining amount Example 13 　 　 0.5 　 　 　 0.005 　 　 0.00025 　 　 Remaining amount Example 14 　 　 0.5 　 　 　 0.095 　 　 0.005 　 　 Remaining amount Example 15 　 　 0.5 　 　 0.095 　 　 　 　 0.005 　 Remaining amount Example 16 　 　 　 5 　 0.095 　 　 　 0.005 　 　 Remaining amount Example 17 　 　 0.5　 　 　 　 0.095 　 　 0.0005 　 　 Remaining amount Example 18 　 　 0.5 　 　 　 0.095 　 　 0.005 　 　 Remaining amount Example 19 　 　 0.5 　 　 　 0.095 　 　 0.006 　 　 Remaining amount Example 20 　 　 0.5　 　 　 　 0.095 　 　 0.0095 　 　 Remaining amount Example 21 　 　 　 　 10 0.1 　 　 　 0.005 　 　 Remaining amount Example 22 0.5 　 　 　 0.001 0.00005 　 　 Remaining amount Example 23 0.5 　 　 0.001 　 　 　 0.005 　 　 Remaining amount Example 24 0.5 　 　 2.5 　 　 　 0.005 　 　 Remaining amount Comparative Example 1 　 　 0.5 　 　 0.1 　 　 　 　 　 　 Remaining amount Comparative Example 2 　 　 0.5 　 　 　 　 　 　 0.005 　 　 Remaining amount Comparative Example 3 　 　 0.5 　 　 　 　 0.095 　 0.005 　 　 Remaining amount Comparative Example 4 　 　 0.5 　 　 　 　 　 0.095 0.005 　 　 Remaining amount Comparative Example 5 　 　 0.5 　 　 　 　 　 0.095 　 　 0.005 Remaining amount Comparative Example 6 　 　 0.5 0.1 0.005 Remaining amount

[0101] - A-1: ​​Ethanol (CAS 64-17-5)

[0102] - A-2: 1-Propanol (CAS 71-23-8)

[0103] - A-3: 1-Pentanol (CAS 71-41-0)

[0104] - A-4: 2-butanol (CAS 78-92-2)

[0105] - A-5: 1-Methoxy-Propanol (CAS 107-98-2)

[0106] - A-6: 1-Heptanol (CAS 111-70-6)

[0107] - B-1: Butyl glycerol ether (CAS 624-52-2)

[0108] - B-2: Hexyl glycerol ether (CAS 10305-38-1)

[0109] - B-3: 2,3-Dimethoxypropane-1-ol (CAS 40453-77-8)

[0110] - B-4: Glycerin (CAS 56-81-5)

[0111] - C-1: 3-methyl,1,2-propanediol

[0112] - C-2: 3-chloro,1,2-propanediol

[0113] - C-3: Triethylene glycol

[0115] Experimental example

[0116] Photoresist pattern manufacturing

[0117] After spin-coating a lower anti-reflective film (DUV42P-6, Nissan Chemical Industries) onto a silicon wafer, a film with a thickness of 600 Å was formed by heating at 215°C for 90 seconds. A photoresist thin film was prepared by spin-coating a PHS-type photosensitive material (KTF-5664, Dongwoo Finechem) onto the silicon wafer having the film formed thereon, and then soft-baked in an oven at 100°C for 60 seconds. Subsequently, the film was exposed using a scanner equipped with a KrF laser and post-baked in an oven at 100°C for 60 seconds. Afterward, the film was developed by immersing it in a 2.38 wt% aqueous solution of tetramethylammonium hydroxide (TMAH) for 60 seconds.

[0118] Subsequently, the developed residue on the upper surface of the silicon wafer was removed using deionized water. After applying 30 ml of the rinse composition prepared in the above examples and comparative examples to the washed silicon wafer surface for 10 seconds, the wafer was dried by high-speed spinning to obtain an 180 nm L / S pattern.

[0120] (1) Pattern Collapse Evaluation

[0121] The degree of the 180nm L / S pattern collapse phenomenon was observed using a CD-SEM (Hitachi) and evaluated according to the following evaluation criteria, and is shown in Table 2 below.

[0122] <Evaluation Criteria>

[0123] ○: No pattern collapse occurs.

[0124] △: Collapse occurs only in the edge pattern.

[0125] ×: Collapse occurs in the edge and central patterns.

[0127] (2) Evaluation of the degree of damage to the photoresist pattern

[0128] Pattern substrates fabricated by photolithography were dipped in each rinse composition at room temperature for 20 seconds and then dried. The condition of the pattern surface was observed using a scanning electron microscope (Regulus 8230, manufactured by Hitachi) according to the criteria shown in Figures 1 and 2 below, and is shown in Table 2 below according to the evaluation criteria below.

[0129] <Evaluation Criteria>

[0130] ○: No change in the pattern surface.

[0131] ×: The pattern surface dissolves or deforms.

[0133] (3) Particle evaluation

[0134] The rinse composition prepared in the above examples and comparative examples was filtered through a 0.01 µm size filter, and Rion's liquid particle counter <ks-18f>Using [the method], the sample was allowed to flow for about 30 minutes, and then the number of 100 nm particles was measured and evaluated according to the following evaluation criteria, as shown in Table 2 below.

[0135] <Evaluation Criteria>

[0136] ○: Less than 100

[0137] △: 100 or more, less than 300

[0138] ×: 300 or more

[0140] division Pattern collapse Photoresist damage particles Example 1 O O O Example 2 O O O Example 3 O O O Example 4 △ O O Example 5 O O O Example 6 O O O Example 7 O △ O Example 8 O O O Example 9 O O O Example 10 O O O Example 11 O O O Example 12 O O O Example 13 O O O Example 14 O O O Example 15 O O O Example 16 △ O O Example 17 O O △ Example 18 O O O Example 19 O O O Example 20 △ O O Example 21 O △ O Example 22 △ O O Example 23 △ O O Example 24 O △ △ Comparative Example 1 O △ X Comparative Example 2 X O O Comparative Example 3 X O O Comparative Example 4 X O O Comparative Example 5 X △ X Comparative Example 6 O X △

[0142] Referring to the experimental results above, it can be confirmed that Examples 1 to 24 according to the present invention include a primary alcohol having 2 to 6 carbon atoms, a glycerol ether compound, and a diol compound together, so that the pattern does not collapse, no change occurs on the surface of the photoresist pattern, and the diol compound is completely dissolved in the rinse composition with fewer than 100 particles.

[0143] In contrast, in Comparative Example 1, which does not contain a diol compound, the glycerol ether compound was not completely dissolved within the composition and acted as a particle, causing damage to the photoresist; in Comparative Examples 2 to 5, which do not contain a glycerol ether compound or contain a compound not included in the range of compounds represented by Formula 1, it was confirmed that the pattern collapsed because the surface tension could not be sufficiently controlled with only a small amount of primary alcohol having 2 to 6 carbon atoms. In particular, in the case of Comparative Example 5, which includes a compound not included in the range of compounds represented by Formula 2, it was confirmed that damage occurred to the photoresist pattern due to the presence of numerous particles as well as pattern collapse. Furthermore, in Comparative Example 6, which contains a primary alcohol having more than 6 carbon atoms, it was confirmed that the alcohol acted as a particle and caused damage to the photoresist.

Claims

Claim 1 A rinse composition comprising a primary alcohol having 2 to 6 carbon atoms, a glycerol ether compound, a diol compound, and water, wherein the glycerol ether compound comprises a compound represented by the following chemical formula 1, and the diol compound comprises a compound represented by the following chemical formula 2: [Chemical Formula 1] In the above Chemical Formula 1, R1 is a straight-chain or branched-chain alkyl group having 2 to 6 carbon atoms.[Chemical Formula 2] In the above chemical formula 2, R2 is hydrogen, a halogen group, or a straight-chain or branched-chain alkyl group having 1 to 3 carbon atoms. Claim 2 A rinse composition according to claim 1, wherein the weight ratio of the glycerol ether compound to the diol compound is glycerol ether compound:diol compound = 15:1 to 20:

1. Claim 3 A rinse composition according to claim 1, wherein the logP value of the primary alcohol having 2 to 6 carbon atoms is 0 to 1.

5. Claim 4 A rinse composition according to claim 1, wherein the primary alcohol having 2 to 6 carbon atoms is included in an amount of 0.05 to 25 weight% based on the total weight of the rinse composition. Claim 5 A rinse composition according to claim 4, wherein the primary alcohol having 2 to 6 carbon atoms is included in an amount of 0.1 to 20 weight% based on the total weight of the rinse composition. Claim 6 A rinse composition according to claim 1, wherein the glycerol ether compound is included in an amount of 0.00375 to 2% by weight based on the total weight of the rinse composition. Claim 7 A rinse composition according to claim 1, wherein the diol compound is included in an amount of 0.00025 to 0.1 weight% based on the total weight of the rinse composition. Claim 8 A rinse composition according to claim 1, wherein the line width of the photoresist pattern to be rinsed using the rinse composition is 200 nm or less. Claim 9 A method for manufacturing a device comprising: a step of forming a photoresist film on a substrate; a step of exposing the photoresist film to light; a step of developing the exposed photoresist pattern to form a photoresist pattern; and a step of rinsing the photoresist pattern using a rinse composition according to any one of claims 1 to 8.

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