Substrate processing apparatus

Abstract

The in-plane uniformity of processing of the end substrate among a plurality of substrates held and supported by a substrate holding support is enhanced. The substrate processing device comprises: a processing tank for holding processing liquid; a substrate holding support that holds and supports a plurality of substrates in an upright position and aligned horizontally at equal intervals within the processing liquid held in the processing tank; a nozzle that sprays processing liquid within the processing tank to form a flow of processing liquid passing between adjacent substrates held and supported by the substrate holding support; and a guide plate that is installed close to the end substrate among the plurality of substrates held and supported by the substrate holding support and is detachably fixed to the substrate holding support, wherein the horizontal distance between the guide plate and the end substrate is approximately equal to the arrangement pitch of the plurality of substrates held and supported by the substrate holding support, and furthermore, the surface of the guide plate facing the end substrate is parallel to the end substrate and guides the flow of processing liquid within the space between the end substrate and the guide plate.

Description

Technology Field

[0001] The present disclosure relates to a substrate processing apparatus. Background Technology

[0002] In the manufacture of semiconductor devices, a plurality of substrates are immersed in a processing solution stored in a processing tank, and liquid treatment is performed on these substrates collectively. In performing this batch treatment, the substrates are held and supported in an upright position and arranged at equal intervals in the front-rear direction by a substrate holding support (also called a "boat," etc.) equipped with a plurality of substrate holding support members arranged in pairs on the left and right. Each substrate holding support member has a roughly V-shaped or Y-shaped slot (substrate holding support groove) as a whole, arranged at equal intervals in the front-rear direction (horizontal direction). The substrate is held and supported with its periphery inserted into the slot. There is a slight gap between the slot and the substrate inserted therein (see, for example, Patent Document 1). Prior art literature

[0003] Japanese Patent Publication No. Hei 8-107137 The problem to be solved

[0004] The present disclosure provides a technology that improves the in-plane uniformity of the end portion of a plurality of substrates held and supported in a substrate holding support. means of solving the problem

[0005] According to one embodiment of the present disclosure, a substrate processing apparatus is provided comprising: a processing tank for storing a processing liquid; a substrate holding support member for holding and supporting a plurality of substrates in an upright position and aligned horizontally at equal intervals within the processing liquid stored in the processing tank; a nozzle for spraying the processing liquid within the processing tank so as to form a flow of the processing liquid passing between adjacent substrates held and supported by the substrate holding support member; and a guide plate that is installed close to the outermost substrate among the plurality of substrates held and supported by the substrate holding support member and is detachably fixed to the substrate holding support member, wherein the horizontal distance between the guide plate and the outermost substrate is approximately equal to the arrangement pitch of the plurality of substrates held and supported by the substrate holding support member, and furthermore, the outermost substrate and the surface of the guide plate facing it are parallel, and the guide plate guides the flow of the processing liquid within the space between the outermost substrate and the guide plate. Effects of the invention

[0006] According to one embodiment of the present disclosure described above, the in-plane uniformity of the end substrate processing among a plurality of substrates held and supported in a substrate holding support can be improved. Brief explanation of the drawing

[0007] FIG. 1 is a schematic plan view of a substrate processing system relating to one embodiment of a substrate processing device. FIG. 2 is a schematic diagram illustrating the configuration of an example of a liquid treatment device that can be embedded in the substrate processing system of FIG. 1. FIG. 3 is a schematic diagram illustrating the configuration of another example of a liquid treatment device that can be embedded in the substrate processing system of FIG. 1. FIG. 4 is a perspective view illustrating an example of the configuration of a substrate holding support provided in the liquid treatment device of FIG. 2 or FIG. 3. FIG. 5a is a cross-sectional view of a substrate holding support rod showing an example of the shape of a substrate holding support groove formed in the substrate holding support rod of the substrate holding support member shown in FIG. 4. FIG. 5b is a cross-sectional view of a substrate holding support rod showing another example of the shape of a substrate holding support groove formed in the substrate holding support rod of the substrate holding support shown in FIG. 4. FIG. 6 is a schematic cross-sectional view showing an example of a structure for detachably fixing a guide plate to a substrate holding support shown in FIG. 4. Figure 7 is a schematic diagram illustrating the flow of liquid discharged from the discharge port of a bar nozzle. FIG. 8 is a schematic diagram illustrating the flow of liquid discharged from the discharge port of a bar nozzle around a guide plate and a substrate adjacent thereto. FIG. 9 is a schematic diagram illustrating the flow of liquid when the guide plate is removed from the configuration of FIG. 8. Figure 10 is a schematic diagram showing the definition of parameters for explaining the flow of liquid around a substrate. Specific details for implementing the invention

[0008] A substrate processing system relating to an exemplary embodiment of a substrate processing apparatus according to the present disclosure is described below with reference to the drawings. Furthermore, the substrate processing apparatus and substrate processing method according to the present disclosure are not limited by this embodiment. Additionally, each embodiment can be appropriately combined within a range that does not contradict the processing content. Furthermore, in each of the following embodiments, the same reference numerals are assigned to identical parts, and redundant descriptions are omitted.

[0009] [Overall configuration of the substrate processing system]

[0010] First, the overall configuration of the substrate processing system will be explained with reference to Fig. 1. In the following, to clearly indicate the positional relationship, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the Z-axis direction is defined as the vertical upward direction.

[0011] The substrate processing system (1) has a carrier input / output unit (2), a lot forming unit (3), a lot loading unit (4), a lot conveying unit (5), a lot processing unit (6), and a control unit (70).

[0012] The carrier loading / unloading section (2) is provided with a carrier stage (10), a carrier conveying mechanism (11), a carrier stock (12, 13), and a carrier loading platform (14). The carrier stage (10) can load multiple carriers (9) that have been conveyed from outside the substrate processing system (1). The carrier conveying mechanism (11) can convey carriers (9) between the carrier stage (10), the carrier stock (12, 13), and the carrier loading platform (14). In the carrier stock (12, 13), carriers (9) containing substrates (W) before processing in the lot processing section (6), or carriers (9) containing substrates (W) after processing in the lot processing section (6), are temporarily stored as needed for purposes such as adjusting the conveying schedule. In the carrier (9), multiple substrates (W) (e.g., silicon wafers) (e.g., 25) are accommodated in a horizontal position, spaced apart from each other, arranged in an up-and-down direction.

[0013] A substrate transport mechanism (15) is provided in the lot forming section (3). The substrate transport mechanism (15) can collectively hold and support multiple substrates (e.g., 25 substrates) (W), change their orientation, and also transport them.

[0014] In the lot forming section (3), a lot loading section (17) for unprocessed substrates and a lot loading section (18) for processed substrates are provided. Each of the lot loading section (17) and the lot loading section (18) can hold and support a plurality of substrates (W) (e.g., 100 sheets) processed simultaneously in the lot processing section (6) in a vertical position and arranged at equal intervals in the horizontal direction.

[0015] In the lot conveying unit (5), a lot conveying mechanism (19) is provided to convey substrates (W) in lot units. In this example, one lot consists of 100 substrates (W). The lot conveying mechanism (19) has a rail (20), a moving body (21) that moves along the rail (20) while holding and supporting the lot, and a substrate holding support body (22) installed on the moving body (21). The lot conveying mechanism (19) can convey one lot (100 substrates) of substrates (W) loaded on the lot loading stand (17) to the lot processing unit (6) in bulk.

[0016] The lot processing unit (6) has a plurality of batch-type liquid processing devices (28) (4 in the illustrated example), a substrate holding support cleaning device (50) that performs cleaning treatment of a substrate holding support (22), and a drying device (60) that performs drying treatment of a processed substrate (W), arranged side by side along the rail (20).

[0017] In the liquid treatment device (28), according to a predetermined treatment recipe, an etching treatment or a cleaning treatment using a chemical solution as the treatment solution, or a rinsing treatment using a rinsing solution (e.g., pure water) as the treatment solution is performed. Each liquid treatment device (28) has a treatment tank (30) for storing the treatment solution and a substrate holding support (100) capable of holding and supporting a lot of substrates (W) (e.g., 100 substrates (W)) in the treatment tank (30).

[0018] The transfer of a substrate (W) is performed between a substrate holding support (100) attached to each treatment tank (30) and a substrate holding support (22) of a lot conveying mechanism (19) located before the treatment tank (30). The treatment tank (30) may be a single-bath type treatment tank capable of performing both chemical treatment and rinse treatment within a single treatment tank. Alternatively, a treatment tank (30) that performs only chemical treatment and a treatment tank (30) that performs only rinse treatment may be adjacent to each other.

[0019] The substrate holding support cleaning device (50) has a treatment tank (51). The treatment tank (51) is capable of supplying a cleaning treatment liquid and a drying gas. After supplying a cleaning treatment liquid to the substrate holding support (22) of the lot conveying mechanism (19), the substrate holding support (22) can be cleaned and dried by supplying a drying gas (e.g., IPA vapor).

[0020] The flow of substrates within the substrate processing system (1) is briefly explained. A carrier (9) brought into the carrier stage (10) is transported to a carrier loading platform (14) by a carrier transport mechanism (11). A substrate transport mechanism (15) extracts a plurality of substrates (W) (first substrates (W)) in bulk from this carrier (9) (first carrier (9)), and converts the first substrates (W) from a horizontal position to a vertical position and places them on a lot loading platform (17) for unprocessed substrates. A substrate transport mechanism (15) extracts a substrate (W) (second substrate (W)) from another carrier (9) (second carrier (9)) placed on the carrier loading platform (14), and inserts one second substrate into the gap between two adjacent first substrates (W) so that the first substrates (W) and the second substrates (W) are arranged alternately. In addition, the same operation is performed on the substrates (W) in the third and fourth carriers (9) so that a plurality (e.g., 100 sheets) of substrates (W) (i.e., one lot of substrates (W)) are arranged at equal intervals on the lot loading platform (17). The substrate transport mechanism (15) itself may have a pitch change mechanism. In this case, the substrate transport mechanism (15) changes the pitch of the substrates (W) taken out of the carrier (9) and then places them on the lot loading platform (17) for unprocessed substrates.

[0021] A substrate holding support (22) of a lot conveying mechanism (19) conveys one lot (100 sheets) of substrates (W) from a lot loading platform (17) to a lot processing unit (6), and a predetermined liquid treatment is performed on the substrates (W) in one or more liquid treatment devices (28). The substrates (W) that have undergone liquid treatment are conveyed to a drying device (60) by the substrate holding support (22) of the lot conveying mechanism (19) and handed over to a substrate holding support (61) provided in the drying device (60). In the processing tank (62) of the drying device (60), a drying treatment using IPA vapor is performed on the substrates held and supported by the substrate holding support (61). For example, during the drying process of the substrate (W), the substrate holding support (22) of the lot transport mechanism (19) is cleaned and dried by the substrate holding support cleaning device (50).

[0022] The dried substrate (W) is placed on a lot loading platform (18) for processed substrates by a lot transport mechanism (19). The substrate transport mechanism (15) holds and supports the substrates (W) on the lot loading platform (18) in multiples (e.g., 25 sheets) and places them in the original carrier (9) placed on the carrier loading platform (14). Each carrier (9) is transported to a carrier stage (10) by a carrier transport mechanism (11) and then transported outside the substrate processing system (1).

[0023] To prevent cross-contamination between substrates (W) before and after processing, two substrate transport mechanisms (15) may be provided, one for transporting a substrate before processing and one for transporting a substrate after processing. Alternatively, one substrate transport mechanism (15) may be provided with a substrate holding support member for holding a substrate before processing and one for holding a substrate after processing.

[0024] The control unit (70) can control the operation of all operable components included in the substrate processing system (1). The control unit (70) is, for example, a computer and is equipped with a control operation unit (71) and a memory unit (72). The memory unit (72) stores a program that controls various processes executed in the substrate processing system (1) (this includes a processing recipe that determines the sequence of processing). The control operation unit (71) controls the operation of the substrate processing system (1) by reading and executing the program stored in the memory unit (72). The control operation unit (71) may be a CPU (Central Processing Unit) or one or more circuits.

[0025] In addition, the above-mentioned program may be recorded on a computer-readable storage medium and installed from the storage medium to the memory unit (72) of the control unit (70). As a computer-readable storage medium, it may be, for example, any one of a hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical disk (MO), memory card, RAM (Random Access Memory), ROM (Read Only Memory), and SSD (Solid State Drive), or a combination of two or more of them.

[0026] Next, an example of the configuration of a batch-type liquid treatment device (28) will be described.

[0027] As shown in FIG. 2, the liquid treatment device (28) has a treatment tank (30) (inner tank (30a)) for storing the treatment liquid, and a substrate holding support (100) that simultaneously holds and supports a plurality of substrates (W) (e.g., 100 sheets) constituting one lot within the treatment tank (30) in an upright position (vertical position) at equal intervals along the Y direction (horizontal direction).

[0028] In the treatment tank (30), a plurality of bar nozzles (bar-shaped nozzles) (32) (two in the illustrated example) are provided to discharge a treatment liquid toward a substrate (W) within the treatment tank (30). In the example shown in FIG. 2, one bar nozzle (32) is provided at the lower right side and one at the lower left side of the substrate (W) held and supported by the substrate holding support (100). The number of bar nozzles (32) is not limited to the example in FIG. 2, and additional bar nozzles may also be provided at the lower right side and one at the lower left side of the substrate (W) held and supported by the substrate holding support (100). Each bar nozzle (32) has a plurality of treatment liquid discharge ports (e.g., 100 or more) spaced apart along its length direction (Y direction).

[0029] The configuration of the substrate holding support (100) and the bar nozzle (32) will be explained in detail later.

[0030] <Composition and Operation of a One-Bath Type Liquid Treatment System>

[0031] "One-bath type" refers to a type in which two or more different types of treatment liquids are used in a single treatment tank. The configuration of the liquid treatment device (28) when it is of the one-bath type is schematically shown in FIG. 2. Pure water as a rinse liquid can be supplied to the bar nozzle (32) via a pure water supply pipe (33) from a pure water supply source (31) provided, for example, as factory power. A chemical supply pipe (35) is connected to the pure water supply pipe (33) via a switching valve device (34). The switching valve device (34) may be composed of a three-way valve or two opening and closing valves. For example, HF (hydrofluoric acid) is supplied as a chemical liquid via the chemical supply pipe (35) from a chemical supply source (36) provided, for example, as factory power. A flow control valve (37) is provided in the pure water supply pipeline (33) upstream of the switching valve device (34). A pump (38) is installed in the chemical supply pipeline (35).

[0032] The treatment tank (30) is composed of an inner tank (30a) that stores the cleaning liquid and an outer tank (30b) that covers the outer edge of the opening of the inner tank (30a). A drain pipe (46) with an opening / closing valve (45) installed is connected to a discharge port (44) provided at the bottom of the outer tank (30b). A discharge port (41) is provided at the bottom of the treatment tank (30), and a drain pipe (42) with an opening / closing valve (43) installed is connected to this discharge port (41).

[0033] A brief explanation of an example of the treatment of a substrate (W) performed in a one-bath type liquid treatment device (28) is provided.

[0034] First, pure water is supplied into the inner tank (30a) from the bar nozzle (32), and the inner tank (30a) is filled with pure water. In this state, the substrate holding support (100) holding the substrate (W) is lowered, and the substrate (W) is immersed in the pure water in the treatment tank (pure water immersion process). Subsequently, the chemical solution supplied from the chemical solution supply source (36) is supplied to the inner tank (30a) from the bar nozzle (32). Accordingly, the liquid in the inner tank (30a) overflows into the outer tank (30b), and the concentration of the chemical solution in the liquid in the inner tank (30a) gradually increases. The liquid that overflows into the outer tank (30b) (in this case, pure water mixed with the chemical solution) is discarded. The liquid that overflows into the outer tank (30b) may be recovered and reused.

[0035] When the liquid concentration in the inner tank (30a) reaches a desired concentration, the supply of the liquid from the bar nozzle (32) is stopped, and the tank is left in that state for a predetermined time (liquid treatment process). After the predetermined time has elapsed, pure water is supplied to the inner tank (30a) from the pure water supply source (31) via the bar nozzle (32). Accordingly, the liquid in the inner tank (30a) overflows into the outer tank (30b), and the liquid concentration of the liquid in the inner tank (30a) gradually decreases (rinsing process). When the liquid concentration in the inner tank (30a) becomes approximately zero (i.e., when the liquid in the inner tank (30a) reaches a state where it can be considered substantially pure), the series of processes in the liquid treatment device (28) is terminated. After that, the substrate holding support (100) holding and supporting the substrate (W) rises, and the substrate (W) is removed from the inner tank (30a).

[0036] <Configuration of a Liquid Treatment Device Dedicated to Specific Treatment Liquids>

[0037] When the liquid treatment device (28) is dedicated to chemical treatment (e.g., treatment with an etching solution, a cleaning solution), as shown in FIG. 3, for example, one end of the circulation path (46A) is connected to the discharge port (44) provided at the bottom of the outer tank (30b). The other end of the circulation path (46A) is connected to the bar nozzle (32). A pump (47) is provided in the circulation path (46A). A filter (48) and a heater (not shown) may be provided in the circulation path (46A) as needed.

[0038] Another example of the treatment of a substrate (W) performed in the liquid treatment device (28) of FIG. 3 is briefly described. In the liquid treatment device (28) dedicated to chemical treatment, a substrate holding support member (100) holding and supporting the substrate (W) is lowered so that the substrate is immersed in the chemical solution stored in the inner tank (30a). The chemical solution is discharged from the bar nozzle (32) toward the substrate (W). The chemical solution that overflows from the inner tank (30a) to the outer tank (30b) flows out from the outer tank (30b) into a circulation path (46A) in which a pump (47), a filter (48), etc. are installed, and is discharged again toward the substrate (W) from the bar nozzle (32). After the substrate (W) is immersed in the chemical solution for a predetermined amount of time, the substrate holding support member (100) is raised so that the substrate (W) is removed from the inner tank (30a). After that, the substrate (W) is transferred from the substrate holding support (100) to the substrate holding support (22) of the lot transport mechanism (19). Subsequently, the substrate holding support (22) transfers the substrate (W) to the substrate holding support (100) of an adjacent liquid treatment device (28) dedicated to rinse treatment, in which pure water as a rinse liquid is stored.

[0039] In the liquid treatment device (28) dedicated to rinsing treatment, rinsing treatment is performed on the substrate (W). The flow of rinsing liquid in the liquid treatment device (28) dedicated to rinsing treatment is the same as the flow of chemical liquid in the liquid treatment device (28) dedicated to chemical treatment, and can be understood by replacing "chemical liquid" with "rinsing liquid." Additionally, in the liquid treatment device (28) dedicated to chemical treatment, during chemical treatment, a concentrated chemical liquid or a diluted liquid may be added to the chemical liquid circulating from their source (49A, 49B) in a part of the circulation system (circulation path (46A) in the illustrated example) to control the concentration of the chemical liquid.

[0040] <Configuration of substrate holding support (100) and bar nozzle (32)>

[0041] Next, the configuration of the substrate holding support (100) and the bar nozzle (32) will be described in detail. One vertically movable substrate holding support (100) is installed in one processing tank (30). The substrate holding support (100) is configured to hold and support a plurality of substrates (e.g., 100 sheets) forming one lot in an upright position (vertical position) at equal intervals. The substrate holding support (100) is formed of, for example, quartz.

[0042] As shown in FIG. 4, the substrate holding support (100) has a plate-shaped member (102) that extends in the vertical direction. The plate (102) is fixed to a lifting member of a lifting drive mechanism not shown by means of fastening means such as a screw, so that it can be lifted in the vertical direction.

[0043] The base portions of four substrate holding support rods (104) are fixed to the back plate (102). The two central substrate holding support rods located at a lower position are also referred to as substrate holding support rods (104a), and the two side substrate holding support rods located at a higher position are also referred to as substrate holding support rods (104b).

[0044] The leading ends of the two substrate holding support rods (104) (104a, 104b) on the right are connected to each other by a bridge (106) (connecting part). The leading ends of the two substrate holding support rods (104) (104a, 104b) on the left are also connected to each other by a bridge (106) (connecting part).

[0045] The joining between the back plate (102), the substrate holding support rod (104), and the bridge (106) is done, for example, by welding.

[0046] Each substrate holding support rod (104) has a number of substrate holding support grooves (108) provided at equal intervals (e.g., 100 (or 50)) corresponding to the number of substrates (W) constituting one lot. The substrate holding support body (22) of the lot conveying mechanism (19) described above has a plurality of substrate holding support rods (22A) (3 in the illustrated example). Each substrate holding support rod (22A) also has the same number of substrate holding support grooves (e.g., 100 or 50) provided at the same interval as the substrate holding support grooves (108) of the substrate holding support rod (104).

[0047] When transferring a substrate (W) from a substrate holding support (22) to a substrate holding support (100), the substrate holding support (100) rises and falls relative to the substrate holding support (22) that holds and supports the substrate (W). Specifically, for example, the substrate holding support (22) is stopped so that the substrate holding support (100) rises. Alternatively, the substrate holding support (100) may be stopped so that the substrate holding support (22) is lowered.

[0048] When transferring a substrate (W) from a substrate holding support (22) to a substrate holding support (100), the central one of the three substrate holding support rods (22A) passes between the two central substrate holding support rods (104), and the remaining two left and right substrate holding support rods (22A) pass further to the right than the right substrate holding support rod (104) and further to the left than the left substrate holding support rod (104). During this passing process, all substrates (W) that were on the substrate holding support (22) are collectively moved and mounted on the substrate holding support (100).

[0049] When transferring a substrate (W) from a substrate holding support member (100) to a substrate holding support member (22), conversely to the above, the substrate holding support member (100) holding the substrate (W) can be raised and lowered relative to the empty substrate holding support member (22).

[0050] The shape of the substrate holding support groove (108) can be V-shaped or Y-shaped. In one configuration example, the two central substrate holding support rods located at a lower position have a V-shaped substrate holding support groove as shown in FIG. 5a provided in the substrate holding support rod (104a), and the two side substrate holding support rods located at a higher position have a Y-shaped substrate holding support groove as shown in FIG. 5b provided in the substrate holding support rod (104b).

[0051] In addition, regardless of whether the shape of the substrate holding support groove (108) is V-shaped or Y-shaped, a certain amount of clearance is provided between the substrate holding support groove (108) and the substrate (W) for the purpose of smooth insertion of the substrate (W) into the substrate holding support groove (108) and prevention of damage to the substrate (W) due to thermal expansion when using a high-temperature processing liquid. Because of this, as described later, some tilting of the substrate (W) may occur due to the flow of liquid around the substrate (W). The tilting of the substrate (W) tends to be greatest at the end of the substrate (W), particularly at the end of the substrate (W) closer to the back plate (102).

[0052] <Guide Plate (310)>

[0053] Next, the guide plate (310) will be described. For convenience of explanation, when a specified number of substrates (e.g., N = 100) are loaded in the substrate holding support (100), the number N (N = 1 to 100) is attached in parentheses after (W) to identify each substrate (W). Specifically, the substrate (W) furthest from the back plate (102) is referred to as substrate (W) (1), and as it approaches the back plate (102), the value of N is increased by one, and the substrate (W) closest to the back plate (102) is referred to as substrate (W) (100). Additionally, the side of each substrate (W) (N) furthest from the back plate (102) is referred to as the "front side," and the side of the substrate (102) closer to the back plate is referred to as the "rear side." The terms “front surface” and “rear surface” are defined solely by their positional relationship with the back plate (102), regardless of whether the surface is a device forming surface of the substrate (W).

[0054] A guide plate (310) for guiding and controlling the flow around the end substrate (W) is detachably fixed to the substrate holding support (100). In the illustrated embodiment, the guide plate (310) is fixed to the back plate (102) of the substrate holding support (100).

[0055] The guide plate (310) can be formed from a material that is not affected by the treatment solution, such as quartz, or a fluorine resin material such as PTFE or PFA.

[0056] The thickness of the guide plate (310) is thicker than the substrate (W) to be processed (e.g., about 700 μm), for example, about 5 mm. By doing so, sufficient strength and rigidity are imparted to the guide plate (310).

[0057] The guide plate (310) preferably has a planar shape approximately the same as the substrate (W) to be processed. More specifically, the planar shape of the guide plate (310) is based on a disc having the same diameter as the substrate (W) or a slightly larger diameter (e.g., about 100 to 120% of the diameter of the substrate (W)), and has several cutouts provided on the periphery to avoid interference with the substrate holding support rods (104) (104a, 104b). In the example shown in FIG. 4, cutouts are provided on the lower part of the guide plate (310) to avoid interference with the two central substrate holding support rods (104a). Additionally, cutouts are provided on the left and right sides of the guide plate (310) to avoid interference with the two side substrate holding support rods (104b) located at a high position.

[0058] A cutout may be provided so that there is almost no gap between the guide plate (310) and the substrate holding support rod (104) (e.g., a gap of 1 mm or less). In this case, it is advantageous in terms of the flow guiding effect of the guide plate (310). However, a relatively large gap (e.g., several mm) may be provided between the guide plate (310) and the substrate holding support rod (104). In this case, there is an advantage that the attachment and detachment of the guide plate (310) to the back plate (102) becomes easier.

[0059] The guide plate (310) is detachably fixed to the back plate (102) via a suitable fastener (312). In the example shown in FIG. 4, four sets of fasteners (312) are provided, each positioned at a position that divides the circumference into four equal parts. Any fastener (312) can be used, such as a combination of bolts and nuts or cylindrical snap-fit ​​joints. The fastener (312) can be formed from a suitable material that is not affected by the processing liquid, such as a fluoropolymer material like PTFE.

[0060] A cylindrical snap-fit ​​joint is formed by a combination of a female member (313) and a male member (314), as shown, for example, in the schematic cross-sectional view of FIG. 6. A hole for inserting the female member (313) is formed in the guide plate (310) and the back plate (102). The female member (313) has a flange portion (313a) and a hollow shaft portion (313b) and is inserted into the hole on the front side of the guide plate (310). The male member (314) has a flange portion (314a) and a flexible shaft portion (314b), and a hook (314c) is provided on the flexible shaft portion. The male member (314) is inserted into the hollow shaft portion (313b) of the female member (313) on the rear side of the back plate (102), and at this time, the hook (314c) is snap-fitted into the hook-receiving concave portion (313c) formed on the inner circumference of the hollow shaft portion (313b) of the female member (313). By this, the female member (313) and the male member (314) are joined so that they cannot move relative to each other in the axial direction. The flange portion (313a) of the female member (313) and the flange portion (314a) of the male member (314) are seated on the flange-receiving surface of the guide plate (310) and the back plate (102), so that the guide plate (310) and the back plate (102) are fixed to each other in a stationary manner with respect to the Y direction. When removing the male member (314), the flexible shaft portion (314b) is operated from the opening on the flange portion (313a) side of the female member (313), the hook (314c) is removed from the hook-bearing concave portion (313c), and the male member (314) is pulled out from the female member (313). Also, in FIG. 6, reference numeral 315 is a spacer to be described later.

[0061] As shown in the schematic diagram of FIG. 8, the guide plate (310) is installed in a vertical position such that the size of the gap (G1) between the rear surface of the substrate (W) (100) and the front surface of the guide plate (310) is equal to the Y-direction distance between adjacent substrates (W) (this is, for example, 5 mm). The size of the gap (G1) refers to the Y-direction distance between the rear surface of the substrate (W) (100) and the front surface of the guide plate (310).

[0062] The rear surface of the guide plate (310) may be in close contact with the front surface of the back plate (102). However, in this case, the flow of liquid colliding with the bottom surface of the back plate (102) and the guide plate (310) may flow into the gap (G1), which may increase the flow rate of the liquid flowing through the gap (G1) or cause the liquid flow within the gap (G1) to become uneven. For this reason, it is preferable that the rear surface of the guide plate (310) (the side facing the back plate (102)) have the same flow as the front surface (the side facing the substrate). Therefore, it is desirable to provide a gap (G2) between the rear surface of the guide plate (310) and the front surface of the back plate (102). From the perspective of liquid flow balance, it is desirable to set the size (Y-direction length) of the gap (G1) and the gap (G2) to the same value.

[0063] In order to ensure that the guide plate (310) is in a securely vertical position (so that the front surface of the guide plate (310) is parallel to the rear surface of the substrate (W) (100)) and also to securely secure the size of the gap (G2), a spacer (315) (see FIG. 6) may be interposed between the guide plate (310) and the back plate (102). The spacer (315) may be, for example, a ring-shaped collar into which the hollow shaft portion (313b) of the aforementioned female member (313) is inserted.

[0064] As shown in FIGS. 7 to 9, the bar nozzle (32) is provided with a plurality of discharge ports (321). In one configuration example, the discharge ports (321) are provided at equal intervals along the Y direction (the longitudinal direction of the bar nozzle (32) and the substrate holding support rod (104). In the illustrated example, the spacing between two adjacent discharge ports (321) is a value equivalent to the arrangement spacing of the substrate (W), for example, 5 mm, but is not limited thereto.

[0065] In one configuration example, as shown in FIG. 7, each bar nozzle (32) has a pair of discharge ports (321) at the same Y-direction position, one diagonally upward and the other diagonally downward. The angle of elevation (α), which is the angle formed by the center axis of the diagonally upward discharge port (321) (312U) with the horizontal plane (i.e., the direction of the main flow of the sprayed processing liquid indicated by the arrow), can be set to a suitable angle, for example, between 35 and 45 degrees. The angle of depression (β), which is the angle formed by the center axis of the diagonally downward discharge port (321) (321D) with the horizontal plane (i.e., the direction of the main flow of the sprayed processing liquid indicated by the arrow), can be set to a suitable angle, for example, between -35 and -45 degrees. The center axis of the pair of discharge ports (321) extends along the XZ plane through the center position in the Y-direction of the gap between two adjacent substrates (W).

[0066] Additionally, since the liquid discharged from the diagonal downward discharge port (321D) among the pair of discharge ports (321) does not significantly affect the matters described below, the following description will be made in relation only to the diagonal upward discharge port (321) (discharge port (321U)).

[0067] FIG. 8 is a schematic diagram illustrating the liquid flow near the back plate (102) in the above embodiment. The arrows indicate the liquid flow through the gap between two adjacent substrates (W), the liquid flow through the gap (G1) between the substrate (W) (100) closest to the back plate (102) and the guide plate (310), and the liquid flow through the gap (G2) between the guide plate (310) and the back plate (102). FIG. 9 corresponds to a configuration according to the prior art in which the guide plate (310) is removed from the configuration of FIG. 8.

[0068]

[0069] Here, the gap between the substrate (W) (100) and the substrate (W) (99) is called the gap (G0), and when the gap between the substrate (W) (100) and the guide plate (310) is called the gap (G1) as described above, various parameters that affect the flow near the substrate (W) (100) are defined as follows.

[0070] Flow rate of liquid flowing through the gap (G0): Q0,

[0071] Fluid velocity through the gap (G0): V0

[0072] Pressure received by the front surface of the substrate (W) (100) facing the gap (G0) and the rear surface of W (99) from the liquid flowing through the gap (G0): P0

[0073] Flow rate of liquid flowing through the gap (G1): Q1

[0074] Fluid velocity through the gap (G1): V1

[0075] Pressure received by the rear surface of the substrate (W) (100) facing the gap (G1) from the liquid flowing through the gap (G1): P1

[0076] If P0 = P1, the substrate (W) (100) can maintain a practically upright position without falling over. Pressure (P0, P1) and flow rate (Q0, Q1) are nearly directly proportional. Therefore, to make P0 = P1, Q0 = Q1 is sufficient.

[0077] Q0 = Cross-sectional area (S0) of gap (G0) × V0

[0078] = Length of G0 in the Y direction (L0) × Width of the substrate (d) × V0

[0079] likewise

[0080] Q1 = Cross-sectional area (S1) of gap (G1) × V1

[0081] = Y-direction length of gap (G1) (L1) × width of substrate (d) × V1

[0082] Therefore, to make Q0 = Q1, we just need to make L0 × d × V0 = L1 × d × V1.

[0083] When the flow velocities V0 and V1 become equal, the substrate (W) can maintain an upright position without falling in either direction.

[0084] Also, please refer to FIG. 10 for the width (d) of the substrate (W).

[0085] As shown in the schematic diagram of FIG. 9, when the guide plate (310) is removed from the configuration of FIG. 8, the flow rate of the liquid flowing through the gap (G3) between the substrate (W) (100) and the back plate (102) becomes significantly larger than the flow rate of the liquid flowing between the substrate (W) (100) and the substrate (W) (99). Because of this, the upper part of the substrate (W) (100) (the part not constrained by the substrate holding support groove (108)) tends to tip over toward the substrate (W) (99) (see arrow (A) in FIG. 9).

[0086] When such a substrate (W) (100) collapses, the gap between the substrate (W) (100) and the substrate (W) (99) becomes smaller at the top, making it difficult for liquid to flow between the substrate (W) (100) and the substrate (W) (99). In this case, for example, in a liquid treatment device (28) of the original bath type, when adding a chemical solution to the pure water in the inner tank (30a), the increase in the concentration of the chemical solution slows down between the substrate (W) (100) and the substrate (W) (99). Then, a problem may arise in which the amount of etching by the chemical solution on the front surface of the substrate (W) (100) (or the rear surface of the substrate (W) (99) becomes smaller at the top. Even in a liquid treatment device (28) dedicated to liquid treatment, as described above, when liquid is added from a supply source (49A, 49B) to adjust the concentration, the change in liquid concentration between the substrate (W) (100) and the substrate (W) (99) is slowed down. This can impair the in-plane uniformity of the treatment of the substrate (W) (100) (or the substrate (W) (99)) and impair the inter-plane uniformity of the treatment of the substrate (W) in one lot. Furthermore, even when the liquid concentration is constant during treatment, if the flow of liquid between the substrates becomes uneven, it can cause damage to the in-plane uniformity and inter-plane uniformity of the treatment.

[0087] The above problem can be solved by providing a guide plate (310) in the manner described above.

[0088] However, as long as the conditions of the above formula are satisfied, it is also conceivable to reduce the flow rate of the liquid flowing through the gap between the substrate (W) (100) and the back plate (102), for example, by reducing the discharge port (312U) in the Y-direction range corresponding to the gap between the substrate (W) (100) and the back plate (102). However, determining how much the flow rate should be reduced or how much the discharge port (312U) should be reduced is not necessarily easy. For this reason, as in the above embodiment, making the sizes of the gap (G0) and the gap (G1) equal to each other and allocating an equal number of discharge ports (312U) to both the gap (G0) and the gap (G1) makes it easier to prevent the substrate (W) (100) from collapsing.

[0089] Additionally, as long as the conditions of the above formula are satisfied, it is also conceivable to make the distance in the Y direction between the substrate (W) (100) and the back plate (102) equal to the distance between the substrate (W) (100) and the substrate (W) (99) (size of the gap (G0)). However, when a guide plate (310) of almost the same shape is adjacent to the substrate (W) (100), and when a back plate (102) that is larger than this and continuously extends in the vertical direction is adjacent to the substrate (W) (100), the conditions for the flow of liquid in the gap between the substrate (W) (100) and the member adjacent to it differ somewhat. Therefore, it is preferable to have a guide plate (310) of almost the same shape adjacent to the substrate (W) (100) from the perspective of balancing the flow.

[0090] In addition, generally, in a quartz substrate holding support member (100), after joining the back plate (102), the substrate holding support rod (104), and the bridge (106) by welding, a substrate holding support groove (108) is formed in the substrate holding support rod (104) by grinding using a diamond cutter (this is also referred to as the "grinding method after joining"). This grinding method after joining provides higher positional precision of the substrate holding support groove (108) compared to the method of welding the substrate holding support rods (104) one by one to the back plate (102) (this is also referred to as the "joining method after grinding"). When the grinding method after joining is adopted, it is practically impossible to machine a groove in the part of the back plate (102) of the substrate holding support rod (104) that is in direct proximity to the back plate (102) due to the limitations of the processing machine (interference of the cutting tool). Specifically, it is difficult to machine the groove unless it is spaced at least 15 to 20 mm away from the back plate (102).

[0091] According to the above embodiment, by adopting a configuration in which a detachable guide plate (310) is fixed to a substrate holding support (100), even when a grinding method is adopted after bonding, it is easy to align the flow conditions of the processing liquid between the gap (G0) on the front side and the gap (G1) on the rear side of the substrate (W) (100) closest to the back plate (102).

[0092] In addition, if a bonding method after grinding, which is not currently widely used due to precision issues, is adopted, it is possible to provide a substrate holding support groove (108) in a position close to the back plate (102). However, as described above, since the rear surface of the substrate (W) (100) is close to the large-area back plate (102), it is difficult to match the flow conditions of the processing liquid between the space on the front side and the space on the rear side of the substrate (W) (100) compared to the above embodiment. For this reason, from the perspective of flow control and manufacturing technology, the above embodiment is considered more preferable.

[0093] However, it is also conceivable to increase the number of substrate holding support grooves (108) without providing a guide plate (310) and to install a dummy substrate (W) on the side of the substrate (W) (100) (closer to the backing plate (102)). In this case, since the substrate (W) (100) is almost never knocked over even if the dummy substrate (W) falls over, there is no concern that the processing quality of the substrate (W) (100) will be compromised. However, handling the dummy substrate (W) is cumbersome. If a substrate identical to the product substrate is used as the dummy substrate (W), that substrate becomes useless. Furthermore, long-term durability of the dummy substrate (W) cannot be expected. Additionally, at what point the dummy substrate (W) is loaded onto the substrate holding support (100) becomes a problem. If the dummy substrate (W) is loaded separately from the substrate (W) forming a lot, a different substrate transport arm is required. If a dummy substrate (W) is included from the beginning in the substrate (W) forming one lot, the number of product substrates (W) included in one lot is reduced by one. As described above, when a dummy substrate (W) is used, there are issues regarding device costs and operating costs. In contrast, if a guide plate (310) is provided as in the above embodiment, the issues regarding device costs and operating costs are greatly reduced.

[0094] In addition, according to the above embodiment, since the guide plate (310) is detachable, it is easy to clean the guide plate (310). Also, since the guide plate (310) is detachable, it is possible to prepare several guide plates (310) of different shapes and finely adjust the flow according to the processing conditions. That is, the shape of the guide plate (310) is not limited to being based on a circle, but may be based on an ellipse or a polygon, etc.

[0095] In addition, according to the above embodiment, it is possible to finely adjust the flow by changing the thickness of the spacer (315) and finely adjusting the gap between the guide plate (310) and the end substrate (W) (100) according to the processing conditions.

[0096] Additionally, as described above, the bar nozzle (32) is provided with discharge ports (321) at intervals equal to the spacing of the substrates (W) arranged at equal intervals along the Y direction, but if necessary, some of the discharge ports (321) may be removed or new discharge ports (321) may be added.

[0097] Specifically, for example, a portion of the discharge port (321) (particularly the diagonal upward discharge port (321U)) located in the Y-direction position corresponding to the back plate (102) (thickness approximately 30 mm) may be deleted. By doing so, the liquid flowing into the gap (G2) near the guide plate (310), for example on the rear side of the substrate (W) (100), can be reduced if the deleted discharge port (321) had remained.

[0098] In addition, for example, one or more discharge ports (321) (especially diagonal upward discharge ports (321U)) may be added to the bar nozzle (32) at a Y-direction position further from the back plate (102) than the bridge (106). The front of the front surface of the substrate (W) (1) furthest from the back plate (102) is open. Because of this, the liquid discharged from the discharge port (321U) that discharges liquid toward the vicinity of the front surface of the substrate (W) (1) spreads forward, and the flow velocity of the liquid flowing near the front surface of the substrate (W) (1) slows down. As a result, the pressure exerted on the substrate (W) (1) by the liquid flowing near the front surface of the substrate (W) (1) and the pressure exerted on the substrate (W) (1) by the liquid flowing near the rear surface of the substrate (W) (1) become uneven, and the substrate (W) (1) tends to be prone to tipping over. As described above, providing an additional discharge port to increase the flow rate of the liquid flowing near the front surface of the substrate (W) (1) helps to solve the aforementioned problem. Additionally, there are cases where it is difficult for the diffusion of the liquid described above to occur due to reasons such as the front surface of the substrate (W) (1) being close to the side wall of the inner tank (30a), and in such cases, the above response is not necessary.

[0099] As another measure to solve the problem regarding the liquid flowing near the front surface of the substrate (W)(1) described above, another guide plate (not shown) with a shape approximately identical to that of the substrate (W)(1) may be provided in front of the substrate (W)(1). Such a guide plate can be screw-fixed, for example, to the left and right bridges (106). By providing such a guide plate, the diffusion of the liquid discharged from the discharge port (321U) that discharges the liquid toward the front surface of the substrate (W)(1) is suppressed. Because of this, the pressure exerted on the substrate (W)(1) by the liquid flowing near the front surface of the substrate (W)(1) and the pressure exerted on the substrate (W)(1) by the liquid flowing near the rear surface of the substrate (W)(1) can be equalized.

[0100] According to the above-described embodiment, the collapse of the substrate (W) (substrate (W) (100)) closest to the back plate (102) can be prevented. Because of this, the flow of liquid flowing near the front and rear surfaces of the substrate (W) (100) becomes equal to the flow of liquid flowing near the front and rear surfaces of other substrates (W). Because of this, the in-plane uniformity of the liquid treatment of the substrate (W) (100) and the adjacent substrate (W) (99) can be increased. In addition, since the substrate (W) (100) and the substrate (W) (99) can be treated with high in-plane uniformity like other substrates (W), the in-plane uniformity of the treatment of multiple substrates (W), for example 100 substrates (W) held and supported by the substrate holding support (100) can also be increased.

[0101] The results of the test performed to verify the effects of the above-described embodiment are briefly explained. In the case of no guide plate (310) (Comparative Example) and with guide plate (310) (Example), the in-plane uniformity and inter-plane uniformity of the etching amount of substrate (W) (1), substrate (W) (25), substrate (W) (50), substrate (W) (75), and substrate (W) (100) were compared. For in-plane uniformity, the etching amount was measured at 5 points for each substrate (W), and (maximum etching amount - minimum etching amount) / [2 * (average etching amount)] was evaluated as the in-plane uniformity index value. For inter-plane uniformity, the difference between the maximum and minimum values ​​of the average etching amount of each substrate (W) (1), substrate (W) (25), substrate (W) (50), substrate (W) (75), and substrate (W) (100) was evaluated as the inter-plane uniformity index value.

[0102] In the comparative example, the in-plane uniformity index values ​​of the substrate (W) (1), substrate (W) (25), substrate (W) (50), and substrate (W) (75) were within the range of 1.09 to 1.37 for the first test; within the range of 1.11 to 1.45 for the second test; and within the range of 0.98 to 1.65 for the third test. In contrast, the in-plane uniformity index values ​​of the substrate (W) (100) were 3.31 for the first test; 4.84 for the second test; and 2.60 for the third test. That is, the in-plane uniformity index values ​​of the substrate (W) (100) were significantly worse than the in-plane uniformity index values ​​of the substrate (W) (1), substrate (W) (25), substrate (W) (50), and substrate (W) (75).

[0103] In the example, the in-plane uniformity index values ​​of the substrate (W) (1), substrate (W) (25), substrate (W) (50), and substrate (W) (75) were within the range of 1.11 to 1.91 for the first test; within the range of 1.02 to 1.83 for the second test; and within the range of 1.32 to 1.65 for the third test. In contrast, the in-plane uniformity index values ​​of the substrate (W) (100) were 1.13 for the first test; 1.08 for the second test; and 1.87 for the third test. That is, the in-plane uniformity index values ​​of the substrate (W) (100) did not differ significantly from the in-plane uniformity index values ​​of the substrate (W) (1), substrate (W) (25), substrate (W) (50), and substrate (W) (75).

[0104] The inter-plane uniformity index values ​​in the comparative example were 0.90 for the first test, 0.65 for the second test, and 0.80 for the third test. The inter-plane uniformity index values ​​in the example were 0.30 for the first test, 0.55 for the second test, and 0.74 for the third test. That is, the inter-plane uniformity index was better in the example.

[0105] Other configuration examples

[0106] Hereinafter, several means for improving flow in the vicinity of the substrate (W) (100) without using a guide plate (310) will be described.

[0107] <Example of Composition 1>

[0108] The flow distribution may be adjusted by deleting or adding discharge ports (321). Specifically, as described above, some of the discharge ports (321) (diagonal upward discharge ports (321U)) located in the Y-direction position corresponding to the plate (102) may be deleted (e.g., 3 out of 6).

[0109] <Example of Composition 2>

[0110] As shown by the dashed line in FIG. 7, a shielding member (105) (shown as only one on one side) may be provided at the bottom of the substrate holding support rod (104), particularly the two substrate holding support rods on both sides located at a high position, to block the central axis of the diagonal upward discharge port (321U). The shielding member (105) is provided at a Y-direction position corresponding to the space between the back plate (102) and the substrate (W) (100) (corresponding to the gap (G3) in FIG. 9). The shielding member (105) prevents the liquid discharged from the diagonal upward discharge port (321U) from flowing directly into the space between the back plate (102) and the substrate (W) (100) (corresponding to the gap (G3) in FIG. 9). As a result, the flow rate of the liquid flowing through the gap (G3) is reduced, so the pressure (P0, P1) on both sides of the substrate (W) (100) can be equalized.

[0111] <Example of 3rd Composition>

[0112] The direction of the diagonal upward discharge port (321U) located in the Y-direction position corresponding to the gap (G3) between the back plate (102) and the substrate (W) (100) may be changed to upward or downward, and the center axis of the discharge port may not pass through the rear surface of the substrate (W) (100) when viewed from the normal direction of the rear surface of the substrate (W) (100). By doing so, the flow rate of the liquid flowing in the space between the back plate (102) and the substrate (W) (100) is reduced, and thus the pressure (P1, P2) on both sides of the substrate (W) (100) can be equalized.

[0113] The embodiments disclosed herein are illustrative in all respects and should not be considered limiting. The embodiments described above may be omitted, substituted, or modified in various forms without departing from the appended claims and their common knowledge.

[0114] The substrate (W) is not limited to a silicon wafer and may be a substrate of any material known in the technical field of semiconductor manufacturing, such as a glass substrate or a ceramic substrate.

Claims

Claim 1 A substrate processing apparatus comprising: a processing tank for storing a processing liquid; a substrate holding support member for holding and supporting a plurality of substrates in an upright position and aligned horizontally at equal intervals within the processing liquid stored in the processing tank; a nozzle for spraying the processing liquid within the processing tank so as to form a flow of processing liquid passing between adjacent substrates held and supported by the substrate holding support member; and a guide plate that is installed close to the outermost substrate among the plurality of substrates held and supported by the substrate holding support member and is detachably fixed to the substrate holding support member, wherein the horizontal distance between the guide plate and the outermost substrate is approximately equal to the arrangement pitch of the plurality of substrates held and supported by the substrate holding support member, and furthermore, the outermost substrate and the surface of the guide plate facing it are parallel, and the guide plate guides the flow of processing liquid within the space between the outermost substrate and the guide plate. Claim 2 A substrate processing device according to claim 1, wherein the substrate holding support further comprises a plurality of substrate holding support members having a plurality of substrate holding support grooves into which the respective peripheral portions of a plurality of substrates are inserted, and a plate-shaped member extending in a vertical direction, wherein one end of each of the plurality of substrate holding support members is fixed to the plate-shaped member, the substrate holding support moves up and down by a lifting drive mechanism fixed to the plate-shaped member, and the guide plate is detachably fixed to the plate-shaped member. Claim 3 In paragraph 2, the guide plate is detachably fixed to the plate-shaped member using a bolt and nut or a snap-fit ​​type fastener, in a substrate processing device. Claim 4 A substrate processing device according to claim 1, wherein the guide plate is a disc-shaped member having a planar shape approximately identical to that of the substrate as a whole. Claim 5 A substrate processing device according to claim 1, wherein the thickness of the guide plate is thicker than the thickness of the substrate to be processed. Claim 6 In claim 1, the guide plate is made of quartz or fluorine resin material, forming a substrate processing device. Claim 7 A substrate processing device according to claim 1, wherein the nozzle is a bar nozzle comprising a plurality of discharge ports arranged along the arrangement direction of a plurality of substrates held and supported by the substrate holding support member, each of the plurality of discharge ports is arranged to spray a processing liquid toward the space between two adjacent substrates, and one of the plurality of discharge ports of the bar nozzle is arranged to spray a processing liquid toward the gap between the guide plate and the outermost substrate.

Images