Apparatus for processing substrate

Abstract

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that reduces the opportunity for a source gas and a reaction gas to interfere in a gas supply line of a process gas supplied to a process chamber. A substrate processing device according to an embodiment of the present invention comprises: a process chamber providing a process processing space for processing a substrate; a gas injection unit including a gas inlet for introducing process gas and injecting the process gas introduced through the gas inlet into the process processing space; a main transfer unit including a main transfer hole which is a transfer path for a first process gas injected through the gas inlet; an auxiliary transfer unit extending from the main transfer unit and including an auxiliary transfer hole which is a transfer path for a second process gas injected through the gas inlet; and a guide unit connecting the gas inlet and the main transfer hole and guiding the second process gas transferred through the auxiliary transfer hole to the gas inlet.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that reduces the opportunity for a source gas and a reaction gas to interfere in a gas supply line of a process gas supplied to a process chamber. Background Technology

[0002] Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) may be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a source gas can cause a chemical reaction on the surface of the substrate to form a thin film. In particular, in the case of atomic layer deposition, since a single layer of source gas attached to the surface of the substrate forms the thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

[0003] Plasma Enhanced Chemical Vapor Deposition (PECVD) or Plasma Enhanced Atomic Layer Deposition (PEALD) can be used to extend the process temperature range. Since PECVD and PEALD enable processing at lower temperatures compared to PECVD and PEALD, the physical properties of the thin film can be improved.

[0004] The process gas for depositing a thin film on a substrate may include a source gas and a reaction gas. A thin film can be deposited on the substrate by injecting the reaction gas after the source gas has been injected into the substrate.

[0005] Meanwhile, if the source gas and the reaction gas react in the gas supply line of the process gas supplied to the process chamber, the reproducibility of thin film deposition may be reduced because the source gas and the reaction gas are not sufficiently supplied to the substrate.

[0006] Therefore, the emergence of an invention that enables the reduction of the reaction between the source gas and the reaction gas within the gas supply line is required. Prior art literature

[0007] Registered Patent Publication No. 10-1139829 (April 30, 2012) The problem to be solved

[0008] The problem that the present invention aims to solve is to provide a substrate processing apparatus that reduces the opportunity for the source gas and the reaction gas to interfere in the gas supply line of the process gas supplied to the process chamber.

[0009] The problems of the present invention are not limited to those mentioned above, and other unmentioned objectives will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0010] To achieve the above objective, a substrate processing device according to an embodiment of the present invention comprises: a process chamber providing a process processing space for processing a substrate; a gas injection unit including a gas inlet for introducing process gas and injecting the process gas introduced through the gas inlet into the process processing space; a main transfer unit including a main transfer hole which is a transfer path for a first process gas injected through the gas inlet; an auxiliary transfer unit extending from the main transfer unit and including an auxiliary transfer hole which is a transfer path for a second process gas injected through the gas inlet; and a guide unit connecting the gas inlet and the main transfer hole and guiding the second process gas transferred through the auxiliary transfer hole to the gas inlet.

[0011] The auxiliary conveyor includes a gas conveyor body extending from the main conveyor, a source gas conveyor hole formed by penetrating a part of the gas conveyor body and providing a conveyor path for the source gas, and a reaction gas conveyor hole formed by penetrating another part of the gas conveyor body and providing a conveyor path for the reaction gas.

[0012] The above gas transfer body is made of metal.

[0013] The above substrate processing device further includes a heater connected to the gas transport body to heat the gas transport body.

[0014] The guide section comprises a guide body, a gas diffusion groove formed by recessing one side of the guide body and forming a diffusion space for a second process gas discharged from the auxiliary transfer hole, a connecting hole formed by penetrating a part of the guide body and connecting the gas inlet and the main transfer hole, and a guide ring forming a boundary between the connecting hole and the gas diffusion groove.

[0015] The guide ring includes a guide hole that guides the second process gas diffused from the gas diffusion groove to the connecting hole.

[0016] The above auxiliary transfer hole is connected to the above gas diffusion groove.

[0017] The above-described substrate processing device further includes a remote plasma generation unit that converts a remote gas into plasma to generate a process material in a plasma state, and the process material includes a cleaning gas.

[0018] The above substrate processing device further includes a gas injection unit for injecting process gas into the process processing space, wherein the gas injection unit includes an injection body that provides a diffusion space for the process gas, and a shower head that injects the process gas diffused in the diffusion space into the process processing space, and the guide unit is disposed on one side of the injection body.

[0019] The above substrate processing device further includes a diffusion unit that diffuses the process gas supplied to the gas injection unit and supplies it to the diffusion space, and the diffusion unit is disposed on the other side of the injection body where the guide unit is not disposed.

[0020] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0021] According to the substrate processing apparatus of the present invention as described above, by reducing the opportunity for interference between the source gas and the reaction gas in the gas supply line of the process gas supplied to the process chamber, the source gas and the reaction gas are sufficiently supplied to the substrate, thereby improving the reproducibility of thin film deposition.

[0022] The effects of the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description in the claims. Brief explanation of the drawing

[0023] FIG. 1 is a drawing showing a substrate processing apparatus according to an embodiment of the present invention. Figure 2 is a diagram showing that the substrate support has moved to the process processing space. Figure 3 is a diagram illustrating the coupling relationship between the process chamber and the gas adapter. Figure 4 is a diagram showing a gas adapter coupled to a process chamber. Figure 5 is a drawing showing an auxiliary transfer unit. Figure 6 is a perspective view of the guide section. Figure 7 is a side cross-sectional view of the guide section. Figure 8 is a drawing showing that the guide section is combined with the main conveying section and the gas injection section. Figure 9 is a diagram illustrating that the source gas is guided by the guide section. Figure 10 is a diagram illustrating that the reaction gas is guided by the guide section. Figure 11 is a diagram illustrating that cleaning gas is supplied to the gas injection section through the guide section. Specific details for implementing the invention

[0024] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components.

[0025] Unless otherwise defined, all terms used in this specification (including technical and scientific terms) may be used in a meaning that is commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0026] FIG. 1 is a drawing showing a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a drawing showing a substrate support member moved to a process processing space.

[0027] Referring to FIGS. 1 and 2, a substrate processing device (10) according to an embodiment of the present invention comprises a process chamber (100), a substrate support (200), a lifting unit (300), a remote plasma generation unit (400), a gas adapter (500), a gas injection unit (600), and a control unit (700).

[0028] A substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (W). Specifically, the substrate processing device (10) can deposit a thin film on a substrate (W) using Plasma Enhanced Chemical Vapor Deposition (PECVD) or Plasma Enhanced Atomic Layer Deposition (PEALD).

[0029] The process chamber (100) may include a chamber body (110) and a chamber lid (120). The chamber body (110) may provide a space for accommodating various components for processing a substrate (W). The chamber lid (120) may seal the upper opening of the chamber body (110). The chamber lid (120) may support a gas injection unit (600). The gas injection unit (600) may be fixed to the lower side of the chamber lid (120).

[0030] The process chamber (100) may provide a process processing space (SP1) and a substrate placement space (SP2). The process processing space (SP1) represents a space for processing a substrate (W), and the substrate placement space (SP2) represents a space for placing and moving the substrate (W). The process processing space (SP1) and the substrate placement space (SP2) may be formed by combining the chamber body (110) and the chamber lid (120). Among the internal spaces of the process chamber (100), the upper space may correspond to the process processing space (SP1), and the lower space may correspond to the substrate placement space (SP2).

[0031] A substrate entry port (130) for the entry and exit of a substrate (W) may be formed on one side of the process chamber (100). For example, a substrate entry port (130) may be formed on one side of the chamber body (110). The substrate (W) may be brought into the interior of the process chamber (100) or taken out of the process chamber (100) through the substrate entry port (130).

[0032] A shutter (140) may be provided in the process chamber (100). The shutter (140) may open or close the substrate entrance (130). When the shutter (140) opens the substrate entrance (130), the substrate (W) may be brought in or taken out through the substrate entrance (130). When a process is being performed on the substrate (W), the shutter (140) may close the substrate entrance (130) to block the interior of the process chamber (100) from the outside.

[0033] The substrate support (200) can provide a mounting surface on which a substrate (W) can be placed. A process can be performed on the substrate (W) placed on the mounting surface of the substrate support (200). The substrate support (200) can heat the substrate (W). To this end, a heater (not shown) may be provided inside the substrate support (200). Heat emitted from the heater can be transferred to the substrate (W) through the body of the substrate support (200).

[0034] The substrate support member (200) can rise to a process processing space (SP1) where a process on the substrate (W) is performed, or descend to a substrate placement space (SP2) where the placement and movement of the substrate (W) are performed. The lifting member (300) can generate a driving force to move the substrate support member (200) in an up-and-down direction. FIG. 1 illustrates the substrate support member (200) descending to the substrate placement space (SP2), and FIG. 2 illustrates the substrate support member (200) rising to the process processing space (SP1).

[0035] The remote plasma generation unit (400) can generate a process material in a plasma state by converting a remote gas into plasma. In the present invention, the remote gas may include a cleaning raw material gas used to generate a cleaning gas. For example, the process material generated by converting the cleaning raw material gas into plasma may be supplied to a process chamber as a cleaning gas. Alternatively, a cleaning gas may be generated by reacting the process material generated by converting the cleaning raw material gas into plasma with a separate auxiliary gas (not shown). The cleaning gas may be used to remove an oxide film formed on a substrate (W).

[0036] The remote plasma generation unit (400) may include a cathode tube (410). The cathode tube (410) can convert a remote gas into plasma using a hollow cathode plasma (HCP) method. For example, the cathode tube (410) can convert a cleaning source gas into plasma. The process material of the plasma-converted cleaning source gas can act as a cleaning gas and be used to remove an oxide film formed on a substrate (W).

[0037] A remote gas supply line (810) may be connected to the remote plasma generator (400). The remote gas supply line (810) may provide a transport path for the cleaning raw material gas.

[0038] The gas adapter (500) can provide a transport path for a first process gas and a second process gas. Here, the first process gas includes a process gas provided from a remote plasma generator (400), and the second process gas includes a process gas provided through a separate path. For example, the first process gas may include a cleaning gas, and the second process gas may include a source gas, a reaction gas, a source purge gas, and a reaction purge gas.

[0039] A process gas supply line (820) may be connected to the gas adapter (500). The process gas supply line (820) may provide a transport path for source gas, reaction gas, source purge gas, and reaction purge gas. The source gas, reaction gas, source purge gas, and reaction purge gas transported through the process gas supply line (820) may be supplied to the process chamber through the gas adapter (500).

[0040] Multiple process gas supply lines (820) may be provided. Source gas, reaction gas, source purge gas, and reaction purge gas may be supplied to the gas adapter (500) through different process gas supply lines (820). Hereinafter, the process gas supply line (820) providing a transport path for the source gas is referred to as the source gas supply line, and the process gas supply line (820) providing a transport path for the reaction gas is referred to as the reaction gas supply line.

[0041] The gas injection unit (600) performs the function of injecting process gas into the process processing space (SP1). The process gas injected into the process processing space (SP1) can be used to form a thin film on the substrate (W).

[0042] The gas injection unit (600) is configured to include an injection body (610) and a shower head (620). The injection body (610) serves to provide a diffusion space (630) for the process gas supplied to the process chamber (100). By combining the injection body (610) and the shower head (620), a diffusion space (630) can be formed between the injection body (610) and the shower head (620).

[0043] The gas injection unit (600) may include a diffusion unit (640). The diffusion unit (640) may diffuse the process gas supplied to the gas injection unit (600) and supply it to the diffusion space (630). The diffusion unit (640) may be positioned on one side of the injection body (610) facing the diffusion space (630). As described below, the gas adapter (500) may include a guide unit (see FIG. 3). The diffusion unit (640) may be positioned on the other side of the injection body (610) where the guide unit is not positioned.

[0044] The showerhead (620) is coupled to the spray body (610) and performs the function of spraying the process gas diffused in the diffusion space (630) into the process processing space (SP1). The showerhead (620) can cause the process gas to be sprayed with a uniform distribution over the entire surface area of ​​the substrate (W). Here, the process gas sprayed into the process chamber (100) by the showerhead (620) may include a source gas, a reaction gas, a source purge gas, a reaction purge gas, and a cleaning gas.

[0045] The shower head (620) may be provided with a plurality of injection holes (621) for injecting process gas. The plurality of injection holes (621) may be distributed over a certain range of the shower head (620).

[0046] An exhaust port (150) may be provided in the process chamber (100). The exhaust port (150) may be positioned on the inner lower surface of the chamber body (110). For example, the exhaust port (150) may be positioned in an area that overlaps vertically with the substrate support (200) to effectively discharge process by-products. Meanwhile, the exhaust port (150) being on the inner lower surface of the chamber body (110) is exemplary, and according to some embodiments of the present invention, the exhaust port (150) may be positioned on the inner side of the chamber body (110). For example, when the substrate support (200) rises into the process processing space (SP1), the exhaust port (150) may be positioned in the area between the substrate support (200) and the gas injection unit (600). Hereinafter, the description will focus on the exhaust port (150) being positioned on the inner lower surface of the chamber body (110).

[0047] The exhaust port (150) may provide a path for the discharge of process by-products. Here, the process by-products may include all substances that must be discharged from the process chamber (100), such as the remaining gas among the process gases supplied to the process chamber (100) that is not used for forming a thin film or for cleaning the substrate (W). For example, the process by-products may include source gas, reaction gas, source purge gas, reaction purge gas, and cleaning gas.

[0048] An exhaust line (160) may be connected to the exhaust port (150). The exhaust line (160) may provide a transport path for process by-products introduced through the exhaust port (150). An exhaust pump (170) may be provided in the exhaust line (160). The exhaust pump (170) may pressurize the internal space of the exhaust line (160) to allow process by-products introduced through the exhaust port (150) to be transported through the exhaust line (160). Process by-products transported through the exhaust line (160) can be discharged from the process chamber (100).

[0049] The control unit (700) can perform overall control over the substrate processing device (10). For example, the control unit (700) can operate the shutter (140) to open and close the substrate entry / exit (130), or control the lifting unit (300) to move the substrate support unit (200). In addition, the control unit (700) can control the supply of RF power to the remote plasma generation unit (400) so that the remote gas supplied to the remote plasma generation unit (400) is converted into plasma. In addition, the control unit (700) can control the valve (not shown) provided in the remote gas supply line (810) and the process gas supply line (820) so that the selected process gas is supplied to the process chamber (100).

[0050] Figure 3 is a diagram illustrating the coupling relationship between a process chamber and a gas adapter, and Figure 4 is a diagram showing the gas adapter coupled to the process chamber.

[0051] Referring to FIGS. 3 and 4, the gas adapter (500) can be coupled to the process chamber (100). Specifically, the gas adapter (500) can be coupled to the chamber lid (120) of the process chamber (100).

[0052] The gas adapter (500) is configured to include a main transfer section (510), an auxiliary transfer section (520), and a guide section (530).

[0053] The gas injection unit (600) includes a gas inlet (611) for introducing process gas, and can inject the process gas introduced through the gas inlet (611) into a process processing space (SP1). The gas inlet (611) may be provided in the injection body (610) of the gas injection unit (600). The process gas introduced through the gas inlet (611) may be diffused by the diffusion unit (640) and supplied to the diffusion space (630) of the gas injection unit (600).

[0054] The main transfer unit (510) may include a main transfer hole (511) which is a transfer path for the first process gas injected into the gas inlet (611). As described above, the first process gas may include a cleaning gas. The cleaning gas transferred through the main transfer hole (511) may be supplied to the gas injection unit (600) through the gas inlet (611).

[0055] The auxiliary transfer section (520) may be formed as an extension from the main transfer section (510). For example, the auxiliary transfer section (520) may be formed as an extension from the main transfer section (510) in a direction perpendicular to the longitudinal direction of the main transfer hole (511). The auxiliary transfer section (520) may include an auxiliary transfer hole (522) which is a transfer path for the second process gas injected into the gas inlet (611). As described above, the second process gas may include a source gas, a reaction gas, a source purge gas, and a reaction purge gas. The source gas, reaction gas, source purge gas, or reaction purge gas transferred through the auxiliary transfer hole (522) may be supplied to the gas injection section (600) through the gas inlet (611).

[0056] A portion of the auxiliary transfer hole (522) may be formed in the main transfer section (510). For example, a portion of the auxiliary transfer hole (522) may be formed in the main transfer section (510) in a direction parallel to the main transfer hole (511). The gas outlet of the auxiliary transfer hole (522) may be in contact with the guide section (530).

[0057] The guide section (530) may be positioned on one side of the injection body (610). For example, the guide section (530) may be positioned on the upper side of the injection body (610). The main transfer section (510) may be positioned on the upper side of the guide section (530). The guide section (530) and the main transfer section (510) may be sequentially stacked on the upper side of the injection body (610).

[0058] The guide section (530) can connect the gas inlet (611) and the main transfer hole (511). To this end, the guide section (530) may include a connecting hole (533). The cleaning gas transferred through the main transfer hole (511) can be injected into the gas inlet (611) through the connecting hole (533).

[0059] Additionally, the guide section (530) can guide the second process gas, which is conveyed through the auxiliary transfer hole (522), to the gas inlet (611). That is, the source gas, reaction gas, source purge gas, and reaction purge gas can be guided by the guide section (530) and injected into the gas inlet (611). A detailed explanation of how the second process gas is guided to the gas inlet (611) will be provided later through FIGS. 9 and FIGS. 10.

[0060] Figure 5 is a drawing showing an auxiliary transfer unit.

[0061] Referring to FIG. 5, the auxiliary transfer unit (520) may include a gas transfer body (521) and an auxiliary transfer hole (522).

[0062] The gas transfer body (521) may be formed as an extension from the main transfer section (510). For example, the gas transfer body (521) may be formed as an extension from the main transfer section (510) in a direction perpendicular to the longitudinal direction of the main transfer hole (511).

[0063] The auxiliary transfer hole (522) may include a source gas transfer hole (522a) and a reaction gas transfer hole (522b). The source gas transfer hole (522a) may be formed by penetrating a part of the gas transfer body (521), and the reaction gas transfer hole (522b) may be formed by penetrating another part of the gas transfer body (521). The source gas transfer hole (522a) and the reaction gas transfer hole (522b) are formed by penetrating different regions of the gas transfer body (521), and the source gas transfer hole (522a) and the reaction gas transfer hole (522b) may not overlap.

[0064] The source gas transfer hole (522a) can provide a transfer path for the source gas. Additionally, the source gas transfer hole (522a) can provide a transfer path for the source purge gas. The reaction gas transfer hole (522b) can provide a transfer path for the reaction gas. Additionally, the reaction gas transfer hole (522b) can provide a transfer path for the reaction purge gas. At least one of the source gas and the source purge gas can be transferred through the source gas transfer hole (522a), and at least one of the reaction gas and the reaction purge gas can be transferred through the reaction gas transfer hole (522b).

[0065] The gas transport body (521) may be made of a material having a relatively high thermal conductivity. For example, the gas transport body (521) may be made of a metal material.

[0066] A substrate processing device according to an embodiment of the present invention may further include a heater (540) connected to a gas transport body (521) to heat the gas transport body (521). The gas transport body (521) is heated by the heater (540), and as a result, the process gas transported through the gas transport body (521) can be heated. In particular, because the gas transport body (521) has a relatively high thermal conductivity, heat is distributed at a uniform temperature over the entire area of ​​the gas transport body (521), and the process gas output from the auxiliary transport unit (520) can have a uniform temperature.

[0067] FIG. 6 is a perspective view of the guide section, and FIG. 7 is a side cross-sectional view of the guide section.

[0068] Referring to FIGS. 6 and 7, the guide portion (530) is configured to include a guide body (531), a gas diffusion groove (532), a connecting hole (533), and a guide ring (534).

[0069] The guide body (531) may be provided in the form of a plate. For example, the guide body (531) may be provided in the form of a disc. The guide body (531) may be coupled to the gas injection unit (600) and the main transfer unit (510). The gas injection unit (600) may be coupled to one side of the guide body (531), and the main transfer unit (510) may be coupled to the other side. Specifically, one side of the guide body (531) may be in close contact with the gas injection unit (600), and the other side of the guide body (531) may be in close contact with the main transfer unit (510).

[0070] The gas diffusion groove (532) is formed by recessing one side of the guide body (531) and can form a diffusion space for the second process gas discharged from the auxiliary transfer hole (522). The auxiliary transfer hole (522) can be connected to the gas diffusion groove (532). The second process gas discharged from the auxiliary transfer hole (522) can be diffused in the gas diffusion groove (532). For example, the gas diffusion groove (532) can be provided in the shape of a ring. Accordingly, the second process gas discharged from the auxiliary transfer hole (522) can be diffused in the shape of a ring.

[0071] A connecting hole (533) is formed by penetrating a part of the guide body (531) and can connect the gas inlet (611) and the main transfer hole (511). For example, the connecting hole (533) can be formed by penetrating the center of the guide body (531). The first process gas discharged from the main transfer hole (511) can be supplied to the gas injection unit (600) through the connecting hole (533).

[0072] The guide ring (534) can form a boundary between the connection hole (533) and the gas diffusion groove (532). The movement of gas between the connection hole (533) and the gas diffusion groove (532) can be blocked by the guide ring (534). Meanwhile, the guide ring (534) may include a guide hole (534a) that guides the second process gas diffused from the gas diffusion groove (532) to the connection hole (533). Although the movement of gas between the connection hole (533) and the gas diffusion groove (532) is blocked by the body of the guide ring (534), the second process gas can move to the connection hole (533) through the guide hole (534a). The second process gas that has moved to the connection hole (533) can be supplied to the gas injection unit (600).

[0073] Figure 8 is a drawing showing that the guide section is combined with the main conveying section and the gas injection section.

[0074] Referring to FIG. 8, the guide section (530) can be coupled to the main transfer section (510) and the gas injection section (600).

[0075] The main transfer section (510) may include a main transfer hole (511) and an auxiliary transfer hole (522). The main transfer hole (511) may be connected to the connecting hole (533) of the guide section (530). That is, the main transfer hole (511) and the connecting hole (533) may be in communication. The cleaning gas transferred through the main transfer hole (511) may be supplied to the gas injection section (600) through the connecting hole (533).

[0076] The auxiliary transfer hole (522) may include a source gas transfer hole (522a) and a reaction gas transfer hole (522b). The source gas transfer hole (522a) and the reaction gas transfer hole (522b) may be connected to the gas diffusion groove (532). As described above, the gas diffusion groove (532) may be provided in the shape of a ring. The source gas transfer hole (522a) may be connected to one side of the gas diffusion groove (532), and the reaction gas transfer hole (522b) may be connected to the other side of the gas diffusion groove (532). The source gas discharged from the source gas transfer hole (522a) and the reaction gas discharged from the reaction gas transfer hole (522b) may be diffused in the gas diffusion groove (532). The source gas or reaction gas diffused from the gas diffusion groove (532) moves to the connection hole (533) through the guide hole (534a), and the source gas or reaction gas that has moved to the connection hole (533) can move from the connection hole (533) to the gas injection part (600).

[0077] The gas injection unit (600) may include a gas inlet (611). Specifically, the gas inlet (611) may be formed in the injection body (610). The gas inlet (611) may be connected to the connection hole (533) of the guide unit (530). That is, the gas inlet (611) and the connection hole (533) may be in communication. The cleaning gas, source gas, or reaction gas transported through the connection hole (533) may be supplied to the diffusion unit (640) through the gas inlet (611).

[0078] FIG. 9 is a diagram illustrating that the source gas is guided by the guide section, and FIG. 10 is a diagram illustrating that the reaction gas is guided by the guide section.

[0079] Referring to FIG. 9, the source gas (SG) can be guided by the guide section (530) and supplied to the gas injection section (600).

[0080] The source gas (SG) can be supplied to the gas diffusion groove (532) of the guide section (530) by moving through the source gas transfer hole (522a). The source gas (SG) supplied to the gas diffusion groove (532) diffuses within the gas diffusion groove (532), and the diffused source gas (SG) can move to the connection hole (533) through the guide hole (534a). The source gas (SG) that has moved to the connection hole (533) can be supplied to the diffusion section (640) through the gas inlet (611) of the gas injection section (600).

[0081] Referring to FIG. 10, the reaction gas (RG) can be guided by the guide section (530) and supplied to the gas injection section (600).

[0082] The reaction gas (RG) can be moved through the reaction gas transfer hole (522b) and supplied to the gas diffusion groove (532) of the guide section (530). The reaction gas (RG) supplied to the gas diffusion groove (532) diffuses within the gas diffusion groove (532), and the diffused reaction gas (RG) can move to the connection hole (533) through the guide hole (534a). The reaction gas (RG) that has moved to the connection hole (533) can be supplied to the diffusion section (640) through the gas inlet (611) of the gas injection section (600).

[0083] A substrate processing device according to an embodiment of the present invention can reduce the mutual interference rate between the source gas (SG) and the reaction gas (RG) until they are supplied to the diffusion section (640). To this end, the source gas (SG) and the reaction gas (RG) can travel to the guide section (530) through different paths. Additionally, the distance between the guide section (530) and the diffusion section (640) can be limited by the thickness of the injection body (610). That is, in the present invention, the section where the source gas (SG) and the reaction gas (RG) can interfere is limited to the connection hole (533) of the guide section (530) and the gas inlet (611) of the injection body (610). In this way, as the interference rate between the source gas (SG) and the reaction gas (RG) is reduced, the possibility of the source gas (SG) and the reaction gas (RG) reacting to form process by-products can be reduced.

[0084] Figure 11 is a diagram illustrating that cleaning gas is supplied to the gas injection section through the guide section.

[0085] Referring to FIG. 11, the cleaning gas (CG) can be supplied to the gas injection unit (600) through the guide unit (530).

[0086] The cleaning gas (CG) can move through the main transfer hole (511). The main transfer hole (511), the connecting hole (533), and the gas inlet (611) can be connected. Accordingly, the cleaning gas (CG) can be supplied to the diffusion section (640) by sequentially passing through the main transfer hole (511), the connecting hole (533), and the gas inlet (611). As the cleaning gas (CG) passes through the connecting hole (533) and the gas inlet (611), the source gas (SG) and reaction gas (RG) remaining in the connecting hole (533) and the gas inlet (611) can be removed.

[0087] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing its technical concept or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0088] 10: Substrate processing device 100: Process chamber 110: Chamber body 120: Chamber Lead 200: Substrate support 300: Elevator 400: Remote plasma generator 500: Gas adapter 510: Main transfer unit 511: Main Transfer Hall 520: Auxiliary transfer unit 521: Gas transfer body 522: Auxiliary transfer hole 522a: Source gas transfer hole 522b: Reaction gas transfer hole 530: Guide Department 531: Guide body 532: Gas Diffusion Home 533: Connection hole 534: Guide Ring 534a: Guide hole 540: Heater 600: Gas injection unit 610: Injection body 611: Gas Inlet 620: Shower head 640: Diffusion section 700: Control unit

Claims

Claim 1 A substrate processing apparatus comprising: a process chamber providing a process processing space for processing a substrate; a gas injection unit including a gas inlet for introducing process gas and injecting the process gas introduced through the gas inlet into the process processing space; a main transfer unit including a main transfer hole which is a transfer path for a first process gas injected through the gas inlet; an auxiliary transfer unit extending from the main transfer unit and including an auxiliary transfer hole which is a transfer path for a second process gas injected through the gas inlet; and a guide unit connecting the gas inlet and the main transfer hole and guiding the second process gas transferred through the auxiliary transfer hole to the gas inlet. Claim 2 A substrate processing apparatus according to claim 1, wherein the auxiliary transfer unit comprises: a gas transfer body extending from the main transfer unit; a source gas transfer hole formed by penetrating a part of the gas transfer body and providing a transfer path for a source gas; and a reaction gas transfer hole formed by penetrating another part of the gas transfer body and providing a transfer path for a reaction gas. Claim 3 In claim 2, the gas transfer body is a substrate processing device composed of a metal material. Claim 4 A substrate processing apparatus according to claim 2, further comprising a heater connected to the gas transfer body to heat the gas transfer body. Claim 5 A substrate processing apparatus according to claim 1, wherein the guide portion comprises: a guide body; a gas diffusion groove formed by recessing one side of the guide body and forming a diffusion space for a second process gas discharged from the auxiliary transfer hole; a connecting hole formed by penetrating a part of the guide body and connecting the gas inlet and the main transfer hole; and a guide ring forming a boundary between the connecting hole and the gas diffusion groove. Claim 6 In claim 5, the guide ring comprises a guide hole that guides the second process gas diffused from the gas diffusion groove to the connecting hole. Claim 7 In claim 5, the auxiliary transfer hole is a substrate processing device connected to the gas diffusion groove. Claim 8 A substrate processing apparatus according to claim 1, further comprising a remote plasma generation unit that converts a remote gas into plasma to generate a process material in a plasma state, wherein the process material includes a cleaning gas. Claim 9 A substrate processing device according to claim 1, further comprising a gas injection unit for injecting process gas into the process processing space, wherein the gas injection unit comprises: an injection body providing a diffusion space for the process gas; and a shower head for injecting the process gas diffused in the diffusion space into the process processing space, and wherein the guide unit is disposed on one side of the injection body. Claim 10 A substrate processing device according to claim 9, further comprising a diffusion unit that diffuses the process gas supplied to the gas injection unit and supplies it to the diffusion space, wherein the diffusion unit is disposed on the other side of the injection body where the guide unit is not disposed.

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