High-precision temperature sensor and method of manufacturing the same

Abstract

A high-precision temperature sensor and a method for manufacturing the same are provided according to one example of the present disclosure. In particular, the high-precision temperature sensor may include a substrate portion formed of an SOI wafer comprising a silicon substrate, an insulating layer, and a sensing layer; and an electrode portion comprising at least one electrode that transmits an electrical signal generated in the sensing layer to the outside.

Description

Technology Field

[0001] The present disclosure relates to a high-precision temperature sensor and a method for manufacturing the same. Background Technology

[0002] Temperature measurement technology is essential in various fields such as semiconductor manufacturing, aerospace, precision industries, and biomedical applications. In particular, the need for temperature sensors capable of maintaining high reliability even in extreme environments is steadily increasing, leading to the development of various types of temperature sensors.

[0003] This temperature sensor is a device that detects changes in temperature, converts them into electrical signals, and outputs them, and is being developed in various forms depending on the usage environment.

[0004] Recently, ultra-small temperature sensors utilizing semiconductor processes have been attracting attention. These ultra-small temperature sensors are capable of high-precision measurement and are being miniaturized and made low-power so that they can be applied to wearable devices, medical implants, and IoT (Internet of Things) devices.

[0005] In addition, there is a demand for the development of highly reliable sensors capable of operating stably even in extreme environments, and to this end, research on nanomaterials, Silicon-On-Insulator (SOI) technology, and high-sensitivity semiconductor materials is actively underway. In the future, temperature sensors are expected to go beyond simple measuring devices and play a key role in various fields, such as autonomous environmental monitoring and AI-based temperature control systems, by combining with smart technologies.

[0006] The background art is provided to facilitate understanding of the present disclosure. It should not be understood as an acknowledgment that the matters described in the background art exist as prior art. The problem to be solved

[0007] Representative temperature sensors currently in use include metal-based resistance temperature detectors (RTDs), semiconductor-based thermistors, and infrared (IR) temperature sensors.

[0008] RTD sensors measure changes in resistance according to temperature changes using metals such as platinum, nickel, and copper. Although this method offers relatively high precision, there is a possibility that performance may degrade or physical deformation may occur due to metal oxidation in high-temperature environments. Additionally, due to the characteristics of metal materials, miniaturization is difficult, and there are issues with high manufacturing costs.

[0009] Thermistors are fabricated based on semiconductor materials and utilize the characteristic of their resistance changing significantly with temperature variations. While thermistors offer high sensitivity capable of detecting rapid temperature changes, they have the disadvantage of a non-linear Temperature Coefficient of Resistance (TCR), providing reliable measurements only within a specific temperature range. In other words, they require a calibration process and suffer from degradation during long-term use, which limits their use as high-precision industrial sensors.

[0010] As such, while existing temperature sensors can be useful under specific conditions, they have technical limitations in operating stably for a long period in extreme environments (e.g., low temperatures below -100°C or high temperatures above 500°C). Additionally, there are problems such as low structural reliability due to repeated temperature changes, making it difficult to maintain accurate measurements, and limitations in fabricating them into nanoscale ultra-small sensors.

[0011] Accordingly, the inventor of the present disclosure has invented a new high-precision temperature sensor based on a semiconductor process and a method for manufacturing the same.

[0012] Accordingly, the problem to be solved by the present disclosure is to provide a high-precision temperature sensor and a method for manufacturing the same, which enables high-precision temperature measurement while maintaining high reliability even in high-temperature and low-temperature environments by optimizing the SOI wafer and the implant process to improve the TCR.

[0013] Furthermore, another problem to be solved by the present disclosure is to provide a high-precision temperature sensor and a method for manufacturing the same, which enables a wider range of applications by applying organoid-on-chip technology and configuring it to be ultra-small and implantable in the human body.

[0014] The problems that this disclosure aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by a person skilled in the art from the description below. means of solving the problem

[0015] To solve the problem described above, a high-precision temperature sensor according to one example of the present disclosure is provided. The high-precision temperature sensor may include a substrate portion formed of an SOI wafer comprising a silicon substrate, an insulating layer, and a sensing layer; and an electrode portion comprising at least one electrode that transmits an electrical signal generated in the sensing layer to the outside.

[0016] According to the features of the present disclosure, the insulating layer may be a silicon oxide layer that electrically insulates the sensing layer from the silicon substrate.

[0017] According to the features of the present disclosure, the sensing layer may be formed on the insulating layer and may be doped with a specific material through implantation in single-crystal silicon to improve the temperature coefficient of resistance (TCR).

[0018] According to the features of the present disclosure, the specific material may include at least one of phosphorus, arsenic, antimony, boron, aluminum, or gallium.

[0019] According to the features of the present disclosure, the sensing layer may have a sensing tip protruding in the longitudinal direction to detect a change in electrical characteristics due to a change in temperature.

[0020] According to the features of the present disclosure, the sensing tip is electrically connected to the electrode portion and can transmit an electrical signal generated in the sensing layer to the outside through the electrode pad.

[0021] According to the features of the present disclosure, the sensing tip may operate as a thermistor or RTD that converts the detected temperature into an electrical signal.

[0022] According to the features of the present disclosure, the sensing tip may have a nanostructure applied to increase the thermal contact area with the external environment.

[0023] According to the features of the present disclosure, the nanostructure may be formed in the form of a nanowire or a nanopillar.

[0024] To solve the problem described above, a method for manufacturing a high-precision temperature sensor according to an example of the present disclosure is provided. This method for manufacturing a high-precision temperature sensor may include the steps of: providing a silicon substrate; forming a silicon oxide layer on the silicon substrate to form an insulating layer; doping a single-crystal silicon onto the insulating layer through an implant to form a sensing layer; and forming at least one electrode that transmits an electrical signal to the outside from the sensing layer.

[0025] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0026] The present disclosure enables high-precision temperature measurement by improving TCR through the optimization of SOI wafers and implant processes while maintaining high reliability even in high and low temperature environments.

[0027] In addition, the present disclosure applies organoid-on-chip technology and is configured to be ultra-small and implantable in the human body, thereby enabling a wider range of applications.

[0028] The effects of the present disclosure are not limited to those mentioned above, and other unmentioned effects will be clearly understood by a person skilled in the art from the description below. Brief explanation of the drawing

[0029] FIG. 1 is a diagram schematically showing the structure of a high-precision temperature sensor according to one embodiment of the present disclosure. FIG. 2 is a schematic diagram showing a sensing tip protruding from the sensing layer of a high-precision temperature sensor according to one embodiment of the present disclosure. FIG. 3 is an exemplary perspective view of a nanostructure formed on a sensing tip according to one embodiment of the present disclosure. FIG. 4 is a diagram schematically showing the structure of a nanostructure formed on a sensing tip according to one embodiment of the present disclosure. FIG. 5 is a cross-sectional view of various examples of the configuration of a nanostructure formed on a sensing tip according to one embodiment of the present disclosure. FIG. 6 is a flowchart schematically illustrating a method for manufacturing a high-precision temperature sensor according to one embodiment of the present disclosure. Specific details for implementing the invention

[0030] The advantages and features of the present disclosure and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present disclosure is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure is complete and to fully inform those skilled in the art of the scope of the invention, and the present disclosure is defined only by the scope of the claims. In connection with the description of the drawings, similar reference numerals may be used for similar components.

[0031] In this document, expressions such as "have," "can have," "include," or "can include" refer to the existence of the relevant feature (e.g., numerical values, functions, actions, or components, etc.) and do not exclude the existence of additional features.

[0032] In this document, expressions such as “A or B,” “at least one of A or / and B,” or “one or more of A or / and B” may include all possible combinations of items listed together. For example, “A or B,” “at least one of A and B,” or “at least one of A or B” may refer to cases including (1) at least one A, (2) at least one B, or (3) both at least one A and at least one B.

[0033] Expressions such as "first," "second," "first," or "second" used in this document may modify various components regardless of order and / or importance, and are used merely to distinguish one component from another without limiting such components. For example, the first user device and the second user device may represent different user devices regardless of order or importance. For example, without departing from the scope of rights set forth in this document, the first component may be named the second component, and similarly, the second component may be renamed the first component.

[0034] Where it is stated that a certain component (e.g., a first component) is "(operatively or communicatively) coupled with" or "connected to" another component (e.g., a second component), it should be understood that the said certain component may be directly connected to the said other component or connected through another component (e.g., a third component). On the other hand, where it is stated that a certain component (e.g., a first component) is "directly connected" or "directly connected" to another component (e.g., a second component), it may be understood that no other component (e.g., a third component) exists between the said certain component and the said other component.

[0035] As used in this document, the expression “configured to” may be replaced, depending on the context, with, for example, “suitable for,” “having the capacity to,” “designed to,” “adapted to,” “made to,” or “capable of.” The term “configured to” does not necessarily mean “specifically designed to” in hardware. Instead, in some situations, the expression “device configured to” may mean that the device is “capable of” in conjunction with other devices or components. For example, the phrase “processor configured to perform A, B, and C” may mean a dedicated processor for performing those operations (e.g., an embedded processor) or a generic-purpose processor (e.g., a CPU or application processor) capable of performing those operations by executing one or more software programs stored in a memory device.

[0036] The terms used in this document are used merely to describe specific embodiments and are not intended to limit the scope of other embodiments. Singular expressions may include plural expressions unless the context clearly indicates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as generally understood by those skilled in the art described in this document. Terms used in this document that are defined in general dictionaries may be interpreted as having the same or similar meaning as they have in the context of the relevant technology, and are not to be interpreted in an ideal or overly formal sense unless explicitly defined in this document. In some cases, even terms defined in this document may not be interpreted to exclude the embodiments of this document.

[0037] The features of each of the various embodiments of the present disclosure may be combined or combined with one another, either partially or wholly, and as will be fully understood by those skilled in the art, various technical interlocking and operation are possible, and each embodiment may be implemented independently of one another or together in an interlocking relationship.

[0038] For clarity in the interpretation of this specification, the terms used in this specification are defined below.

[0039] As used herein, the term "RTD" may be an electric resistance thermometer capable of precisely measuring the temperature of a target substance or environment by measuring the resistance that changes according to temperature with an electrode disposed on a substrate. Here, the target substance may include at least one of solids, liquids, gases, biological substances, or organic substances.

[0040] As used in this specification, the term "substrate" may refer to a plate on which electrodes for sensing temperature in various materials and environments are formed. The substrate disclosed in this specification may be a flexible substrate, or a fixed or rigid substrate. That is, a substrate of a more suitable form may be applied depending on the environment in which the temperature is to be measured.

[0041] At this time, the substrate may be formed from any one of glass, ceramic, polyimide, stainless steel, silicon, or synthetic polymer. Among these, the synthetic polymer may include, for example, at least one of polyethyleneterephthalate (PET), poly(methyl methacrylate) (PMMA), polyimide (PI), polystyrene (PS), polyethylenenaphthalate (PEN), or polycarbonate (PC). Additionally, depending on the specific application environment, a semiconductor-based substrate such as a silicon (Si) substrate may also be used.

[0042] However, the material of the substrate is not limited to this, and can be made of various other materials in addition to those listed above.

[0043] As used in this specification, the term "electrode" means a conductive electrode having electrical conductivity.

[0044] At this time, the electrode disclosed in the present specification may mean an electrode pattern in which a conductive material is printed on a substrate in various ways.

[0045] For example, the electrode may be a conductive electrode formed by printing at least one organic material selected from carbon black, carbon graphite, graphene, fullerene, and carbides onto a substrate. Additionally, the electrode may be a conductive electrode formed by printing at least one metal selected from Au, Ni, Cu, Zn, Fe, Al, Ti, Pt, Hg, Ag, Pb, and alloys thereof onto a substrate.

[0046] As used in this specification, the term "nano-pillar" may be a polymer of nano-sized structure formed on a substrate. In this case, "nano-pillar" may be interpreted as having the same meaning as "nano-pillar array" or "pillar-shaped polymer structure" within this specification.

[0047] According to the features of the present disclosure, the nano-pillar may be composed of a blend (PUNO) of PU and a NOA-based adhesive such as trade name NOA 68. In this case, the content of each of PU and NOA-based adhesive in the blend may be 20 to 80 weight %, preferably 30 to 70 weight %, and more preferably 40 to 60 weight %.

[0048] However, nanofilaments are not limited to this and can be made of a wider variety of polymers as long as they are flexible.

[0049] Hereinafter, the present disclosure will be described in detail by explaining preferred embodiments of the present disclosure with reference to the attached drawings.

[0050] FIG. 1 is a schematic diagram showing the structure of a high-precision temperature sensor according to one embodiment of the present disclosure. Hereinafter, the structure of FIG. 1 will be described in more detail with reference to FIG. 2 and FIG. 3.

[0051] Referring to FIG. 1, a temperature sensor (100) according to one embodiment of the present disclosure may be configured to include a substrate portion (100) and an electrode portion (200).

[0052] First, the substrate portion (100) is based on an SOI wafer and includes a silicon substrate (110), an insulating layer (Buried Oxide, BOX Layer) (120), and a sensing layer (130).

[0053] First, the silicon substrate (110) is located at the bottom of the SOI wafer and is typically formed from a silicon wafer as the part that forms the basic physical basis of the sensor. This silicon substrate (110) serves to support the sensing layer (130).

[0054] The insulating layer (120) can be implemented by forming a silicon oxide layer on the silicon substrate (110). That is, the silicon oxide layer acts as an insulating layer. At this time, since the silicon oxide provides stable electrical insulation properties even at high temperatures, the insulating layer (120) can electrically insulate (separate) the sensing layer (130) from the silicon substrate (110).

[0055] For example, the insulating layer (120) can be formed using a thermal oxidation process that oxidizes a silicon substrate under an oxygen atmosphere at a high temperature (900 to 1100°C), as well as other methods such as PECVD (Plasma Enhanced Chemical Vapor Deposition), LPCVD (Low Pressure Chemical Vapor Deposition), and sputtering. For example, the insulating layer (120) is composed of silicon oxide (SiO₂) to serve as an electrical insulation layer, and its thickness can be controlled to 500 nm to 2 μm. Additionally, if necessary, a SiO₂ layer may be additionally deposited using a PECVD (Plasma Enhanced Chemical Vapor Deposition) process.

[0056] Additionally, the insulating layer (120) may be formed based on at least one material among silicon nitride (Si3N4), aluminum oxide (Al2O3), titanium oxide (TiO2), magnesium oxide (MgO) or polyimide, in addition to silicon oxide (SiO2).

[0057] However, each insulating layer (120) is not limited to the materials listed above and may be formed from other materials or a mixture of those materials.

[0058] Meanwhile, the sensing layer (130) is formed on the insulating layer (120) and generates an electrical signal in response to temperature. To this end, the sensing layer (130) may be formed from high-purity single-crystal silicon or a specific doped semiconductor material. Thus, the sensing layer (130) is formed as a floating structure on the silicon substrate (110) through the insulating layer (120), allowing for rapid heat transfer and increased durability against external shocks or vibrations. This floating structure can be implemented through MEMS (Micro-Electro-Mechanical Systems) and semiconductor processes.

[0059] This sensing layer (130) detects temperature through changes in electrical properties according to temperature (e.g., changes in electron concentration, band gap, changes in charge mobility, etc.), and changes in the temperature coefficient of resistance (TCR) can be utilized as a primary sensing method.

[0060] Additionally, the sensing layer (130) may be doped with a specific material through implantation in single-crystal silicon to enhance TCR. Here, the specific material may include at least one of phosphorus, arsenic, antimony, boron, aluminum, or gallium.

[0061] As an example, the sensing layer (130) may be formed on the insulating layer (120) with a certain pattern (e.g., a zigzag pattern, a wave pattern, etc.). This increases the surface area of ​​the sensing layer (130) and allows for more sensitive detection of resistance changes due to temperature changes, thereby improving the temperature resistance coefficient of the temperature sensor. In other words, through this configuration, the change in resistance becomes large even with small temperature changes, thereby increasing sensitivity and improving the temperature sensing sensitivity.

[0062] For example, the sensing layer (130) can be formed by placing a silicon thin film on the insulating layer (120). The thickness of the sensing layer (130) is controlled to be about 1 to 10 μm, and can be manufactured with a fine thickness so as to be sensitive to temperature.

[0063] Meanwhile, the sensing layer (130) may be provided with a sensing tip (131) protruding in the longitudinal direction to more sensitively detect changes in electrical characteristics due to temperature changes. In this case, the sensing tip (131) may be in the form of an extension of the sensing layer (130), or may be in the form of a separate sensing element (e.g., a thermistor or an RTD (Resistance Temperature Detector)) separate from the sensing layer (130). In this case, the sensing element may be directly connected to the sensing layer (130) through a metal electrode and may be designed to maintain high sensitivity within a specific temperature range.

[0064] Specifically, as the sensing tip (131) protrudes, the protruding part can directly contact the stimulus (temperature), thereby increasing the detection area and improving sensitivity. Additionally, the accuracy of the measurement can be increased by measuring the stimulus at a specific point where the stimulus is to be detected. Furthermore, since the response to the stimulus is concentrated at a specific point, changes can be detected more locally, which is advantageous for applications requiring high-sensitivity sensing. Moreover, the response time of the sensor can be shortened because the collected information is transmitted and processed more effectively.

[0065] This sensing tip (131) can be electrically connected to the electrode portion (200) in a direct contact or capacitive coupling manner, and the electrical signal generated in the sensing layer (130) can be transmitted to an external device or system as it is transmitted to the electrode portion (200) through the sensing tip (131).

[0066] At this time, the sensing tip (131) can operate as a thermistor or RTD that converts the detected temperature into an electrical signal. At this time, the thermistor has the characteristic that its resistance changes non-linearly with temperature change, and the RTD has the characteristic that its resistance changes linearly with temperature, so the temperature can be measured accurately.

[0067] Meanwhile, a nanostructure (A) can be formed in an arrangement as shown in FIG. 3 to increase the thermal contact area with the external environment on the sensing tip (131). By doing so, the area can be further expanded, thereby further improving the temperature sensing sensitivity.

[0068] If this nanostructure (A) is arranged in a straight line, there is a possibility that temperature changes may be concentrated in a specific area, but if it is formed in a zigzag pattern or a wave pattern, the temperature is evenly distributed across the sensing tip (131) and the response of the entire temperature sensor (1000) can be maintained constant, and the electrical path within the same area is lengthened, which can be advantageous for adjusting the resistance value. In addition, this shape provides greater flexibility against physical deformation (e.g., expansion, contraction, etc.), thereby increasing the durability of the temperature sensor (1000).

[0069] Meanwhile, the nanostructure (A) can be formed in the form of a nanowire or a nanopillar.

[0070] For example, in the case of a nanowire form, nanowires can be formed in a continuous pattern on the sensing tip (131), and in the case of a nanopillar form, they can be formed by being arranged independently at regular intervals on the sensing tip (131).

[0071] Referring to FIG. 3, the nanostructure (A) may include a plurality of nanofillers (1310), and the shape of the nanostructure (A) may be determined by the plurality of nanofillers (1310).

[0072] However, although FIG. 3 illustrates that each nanopillar (1310) has a cylindrical shape with a curved upper portion, the shape of each nanopillar (1310) in various embodiments of the present disclosure is not limited thereto and can be formed in various shapes such as, for example, a cone, a cylinder, a square prism, a pyramid, a porous prism, a branching, etc. These various shapes may be referred to as nanowires, nanorods, nanoneedles, nanocones, nanotrones, etc.

[0073] In describing the present invention above, the description was limited to cases where the nanostructure (A) is applied to the sensing tip (131), but this is only one embodiment, and the nanostructure (A) may also be applied to the sensing layer (130).

[0074] Meanwhile, the electrode portion (200) includes at least one electrode that transmits an electrical signal generated in the sensing layer (130) to the outside. At this time, the electrode portion may be electrically connected to the sensing layer (130) to detect a changing temperature.

[0075] At this time, at least one electrode may be composed of metal and is designed to transmit an electrical signal.

[0076] According to the structure described above, the sensing layer (130) can be formed into a MOSFET structure using an SOI wafer. For example, the sensing layer (130) can act as the gate of a transistor to control the current flow, and as the temperature changes, the resistance (TCR) of the sensing layer (130) changes, causing the voltage to change. Accordingly, it can operate in such a way that the channel (current path) opens or closes at a specific temperature. In other words, the sensing layer (130) can be configured to operate as a transistor to form or block a path for current flow depending on the temperature change.

[0077] For convenience of explanation, the present disclosure will be described in detail below with reference to FIGS. 4 and 5, which are based on nano-pillars.

[0078] FIG. 4 is a schematic diagram showing the structure of a nanostructure formed on a sensing tip according to one embodiment of the present disclosure, and FIG. 5 is a cross-sectional view of various examples of the configuration of a nanostructure formed on a sensing tip according to one embodiment of the present disclosure.

[0079] As previously explained, the nanostructure (A) may include a plurality of nanopillars (1310), the nanopillars (1310) are formed protruding along the surface of the sensing layer (130), and a temperature sensing material (1311) may be doped into the upper part of the nanostructure (A).

[0080] Here, the temperature sensing material (1311) may be formed based on at least one material of platinum (Pt), nickel (Ni), gold (Au), silver (Ag), copper (Cu), palladium (Pd), tungsten (W), aluminum (Al), cobalt (Co), iron (Fe) or chromium (Cr).

[0081] However, the temperature sensing material (2211) is not limited to the materials listed above and may be formed from other materials or a mixture of such materials.

[0082] At this time, each nano filler (1310) may be in a form integrated with the surface (F) of the sensing layer (130), or may be an attached type independent of the surface (F) that is disposed on the surface (F). However, it is not limited thereto, and the nano filler (1310) may be used in a mixed form of integrated or attached type.

[0083] Additionally, each nano filler (1310) may be made of an elastic polymer. Since the elastic polymer has elasticity, when a plurality of nano fillers (1310) are deformed, the plurality of nano fillers (1310) may have a restoring force.

[0084] Meanwhile, a plurality of nano fillers (1310) may have suitable diameters, heights, and arranged spacings. For example, the diameter (W1) of each nano filler (1310) may be 50 nm to 1,000 nm, preferably 200 nm to 500 nm. In addition, the height (H1) of each nano filler (1310) may be 0.1 μm to 2 μm, preferably 0.5 μm to 1.5 μm. Meanwhile, the spacing (W2) between each nano filler (1310) may be 0.2 μm to 2 μm.

[0085] Each of these nano-fillers (1310) may be arranged with the same diameter and height, but may also be formed and arranged with different diameters or heights. For example, as shown in FIG. 5 (a), a plurality of nano-fillers (1310) may be formed and arranged to have a height that increases in a specific direction in one cross-section. Also, as shown in FIG. 5 (b), a plurality of nano-fillers (1310) may be formed such that the height of the nano-fillers arranged on the outer side in one cross-section is lower than the height of the nano-fillers arranged on the inner side. Meanwhile, as shown in FIG. 5 (c), a plurality of nano-fillers (1310) may be formed such that the height of the nano-fillers arranged on the inner side in one cross-section is lower than the height of the nano-fillers arranged on the outer side.

[0086] In another embodiment, a functional layer (not shown) may be further formed on a nanostructure (A) coated with a temperature sensing material (1311). However, since the temperature sensing performance may be impaired by this functional layer, the functional layer may not be formed at all, or if formed, it may be formed thinly (at the nanometer level) to minimize the impact on temperature sensing. In this case, the functional layer may refer to a layer consisting of some or all of an ionic polymer disposed on a nanopillar (1310). Here, the ionic polymer can be produced by polymerizing a cationic monomer and an anionic monomer by chemical vapor deposition using an initiator, and the cationic monomer may include at least one of dimethylaminoethyl methacrylate (DMAEMA), 2-dimethylaminomethyl styrene (DMAMAS), n-vinylimidazole (VIDZ), and 4-vinyl pyridine (4VP), but is not limited thereto. In addition, the anionic monomer may include at least one of vinylbenzyl chloride (VBC), maleic anhydride (MA), glycidyl methacrylate (GMA), and 2-chloroethyl acrylate (CEA), but is not limited thereto.

[0087] Through the polymerization of such cationic monomers and anionic monomers, ionic polymers p(VBC-co-DMAEMA), p(VBC-co-DMAMAS), p(VBC-co-VIDZ), p(VBC-co-4VP), p(MA-co-DMAEMA), p(MA-co-DMAMAS), p(MA-co-VIDZ), p(MA-co-4VP), p(GMA-co-DMAEMA), p(GMA-co-DMAMAS), p(GMA-co-VIDZ), p(GMA-co-4VP), p(CEA-co-DMAEMA), p(CEA-co-DMAMAS), p(CEA-co-VIDZ), and p(CEA-co-4VP) can be formed.

[0088] In the formed ionomer polymer p(VBC-co-DMAEMA), the ratio of VBC to DMAEMA can be 1:1 to 1:10, preferably 1:2 to 1:6, and more preferably 1:4.

[0089] Furthermore, the functional layer may have a suitable thickness. For example, the thickness (H4) of the functional layer may be 10 nm to 100 nm. Accordingly, the height (H1) of the nanopillar (1210) may be a height that includes the thickness (H2) of the sensing layer (130), the thickness (H3) of the temperature sensing material (1311), and the thickness (H4) of the functional layer.

[0090] Due to the configuration of the nanostructure (A) including the above nanopillars and functional layers, the shape in which the functional layer to be disposed on the plurality of nanopillars (1310) is arranged can be varied, and at the same time, the shape in which the plurality of nanopillars (1310) are arranged can be varied.

[0091] However, as explained above, since a temperature sensing material (1311) can be formed on the nanostructure (A), when forming a functional layer in the presence of the temperature sensing material (1311), the components and characteristics of the two materials should be considered. For example, whether the two materials chemically react, whether they interfere with each other's operation, or whether the two materials can be formed stably and uniformly can be considered.

[0092] FIG. 6 is a flowchart schematically illustrating a method for manufacturing a high-precision temperature sensor according to one embodiment of the present disclosure, wherein each step can be performed by a device.

[0093] Referring to FIG. 6, when a silicon substrate (110) is provided, the device forms an insulating layer (120) by forming silicon oxide on the provided silicon substrate (110) through an oxidation process (S110).

[0094] Next, the device forms a sensing layer (130) by doping single-crystal silicon onto the insulating layer (120) through an implant (S120). At this time, the device can improve temperature sensing sensitivity by forming the sensing layer (130) in a zigzag pattern or a wave pattern. Additionally, the temperature sensing sensitivity can be improved by forming a nanostructure (A) on the sensing layer (130) in the form of a nanowire or a nanopillar.

[0095] Meanwhile, if the sensing layer (130) itself is formed in an extended form and the sensing tip (131) is formed, the sensing layer (130) is formed and the sensing tip (131) is also formed. However, if the sensing tip (131) is formed by providing a separate sensing element in the sensing layer (130), then after forming the sensing layer (130) in step S120, a process of connecting the sensing tip (131) containing the sensing element (e.g., bonding, etching, nanostructure deposition, etc.) may be further performed.

[0096] In addition, if a nanostructure is applied to the sensing layer (130) or the sensing tip (131), the process of applying a temperature sensing material (1311) after laminating the curved sensing layer (130) on the insulating layer (120) in step S120 may be further performed.

[0097] Next, the device forms at least one electrode in the sensing layer (130) to transmit an electrical signal to the outside (S130). At this time, the electrode can be formed at a desired location using a patterning and deposition process, and, for example, gold (Au), silver (Ag), ITO (Indium Tin Oxide), etc. can be used as the electrode material.

[0098] Meanwhile, although not illustrated in FIG. 3, after step S130, the device may perform additional etching and patterning processes as needed to optimize the structure of the temperature sensor. In addition, the durability of the temperature sensor (1000) may be increased by further forming a protective layer or passivation layer to protect the sensing layer (130).

[0099] As described above, according to the present disclosure, high-precision temperature measurement can be enabled by optimizing the SOI wafer and implant process to improve the TCR while maintaining high reliability even in high and low temperature environments, and it is expected to be utilized in various application fields such as industrial, medical, and smart devices.

[0100] The examples of the present disclosure disclosed in this specification and drawings are provided merely to facilitate the explanation of the technical content of the present disclosure and to aid in understanding the present disclosure, and are not intended to limit the scope of the present name. It is obvious to those skilled in the art that other variations based on the technical concept of the invention are possible in addition to the examples disclosed herein. Explanation of the symbols

[0101] 100: Temperature sensor 110: Silicon substrate 120: Insulating layer 130: Detection layer 131: Sensing Tip 1310: Nanofilament 1311: Doping Layer

Claims

Claim 1 A high-precision temperature sensor comprising: a substrate portion formed of an SOI wafer including a silicon substrate, an insulating layer, and a sensing layer; and an electrode portion including at least one electrode that transmits an electrical signal generated in the sensing layer to the outside. Claim 2 A high-precision temperature sensor according to claim 1, wherein the insulating layer is a silicon oxide layer that electrically insulates the sensing layer from the silicon substrate. Claim 3 A high-precision temperature sensor according to claim 1, wherein the sensing layer is formed on the insulating layer and is doped with a specific material through implantation in single-crystal silicon to improve the temperature coefficient of resistance (TCR). Claim 4 In paragraph 3, the specific material comprises at least one of phosphorus, arsenic, antimony, boron, aluminum, or gallium, a high-precision temperature sensor. Claim 5 A high-precision temperature sensor according to claim 1, wherein the sensing layer is provided with a sensing tip protruding in the longitudinal direction to detect changes in electrical characteristics according to temperature changes. Claim 6 In claim 5, the sensing tip is electrically connected to the electrode portion and transmits an electrical signal generated in the sensing layer to the outside through the electrode pad, a high-precision temperature sensor. Claim 7 In paragraph 5, the sensing tip is a high-precision temperature sensor that operates as a thermistor or RTD that converts the detected temperature into an electrical signal. Claim 8 In paragraph 5, the sensing tip is a high-precision temperature sensor in which a nanostructure is applied to increase the thermal contact area with the external environment. Claim 9 A high-precision temperature sensor according to claim 7, wherein the nanostructure is formed in the form of a nanowire or a nanopillar. Claim 10 A method for manufacturing a high-precision temperature sensor, performed by a device, comprising the steps of: providing a silicon substrate; forming a silicon oxide layer on the silicon substrate to form an insulating layer; doping a single-crystal silicon on the insulating layer through an implant to form a sensing layer; and forming at least one electrode in the sensing layer to transmit an electrical signal to the outside.

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