Electrostatic chuck assembly for plasma processing apparatus

Abstract

An electrostatic chuck is disclosed comprising a clamping layer having a first clamping electrode and a second clamping electrode. A first clamping electrode is provided to define a first clamping zone and a second clamping zone. The first clamping zone and the second clamping zone are separated by a first gap and are electrically connected by at least one electrical connection extending across the first gap. A second clamping electrode is disposed radially outward from the first clamping electrode. The second clamping electrode defines a third clamping zone and a fourth clamping zone separated by a second gap. The third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap. Additionally, a plasma processing apparatus and system comprising an electrostatic chuck are also provided.

Description

Technology Field

[0001] Claim of priority

[0002] This application claims the benefit of priority of Chinese application No. 202110589056.5, filed on May 28, 2021, titled "Electrostatic Chuck Assembly For Plasma Processing Apparatus," which is incorporated herein by reference for all purposes.

[0003] Technology field

[0004] The present disclosure generally relates to a plasma processing apparatus for plasma processing of a workpiece. More specifically, the present disclosure relates to an electrostatic chuck assembly for a plasma processing apparatus. Background Technology

[0005] Various types of process chambers are available for processing various types of workpieces. Workpieces may include, for example, glass plates, films, ribbons, solar panels, mirrors, liquid crystal displays, semiconductor wafers, etc. For example, various types of process chambers are available for processing semiconductor wafers during the manufacturing of integrated circuit chips. Process chambers can be used to anneale wafers and perform chemical vapor deposition, physical vapor deposition, plasma and chemical etching processes, thermal processes, surface engineering, and other processes. These types of process chambers typically include workpiece supports for holding the workpiece within the chamber.

[0006] In many processes, it is desirable to control specific parameters of the workpiece during processing to ensure uniformity. Although various attempts have been made to design workpiece supports capable of controlling temperature non-uniformity, various defects and shortcomings remain. Therefore, improved workpiece supports, plasma processing devices, and systems are required. Brief explanation of the drawing

[0007] Detailed description of embodiments for those skilled in the art is described herein with reference to the attached drawings, and in the drawings: FIG. 1 illustrates an exemplary processing apparatus according to an exemplary embodiment of the present disclosure. FIG. 2 illustrates an exemplary workpiece support according to an exemplary embodiment of the present disclosure. FIG. 3 illustrates an exemplary workpiece support according to an exemplary embodiment of the present disclosure. FIG. 4 illustrates a top view of a clamping layer having two clamping electrodes according to an exemplary embodiment of the present disclosure. FIG. 5 illustrates a top view of a heating layer having one or more heating electrodes according to an exemplary embodiment of the present disclosure. FIG. 6 illustrates a bottom view of a clamping layer and a trace connection portion according to an exemplary embodiment of the present disclosure. FIG. 7 illustrates a bottom view of a clamping layer and a trace connection portion according to an exemplary embodiment of the present disclosure. FIG. 8 illustrates a bottom view of a clamping layer and a trace connection portion according to an exemplary embodiment of the present disclosure. FIG. 9 illustrates a top view of a thermal control system according to an exemplary embodiment of the present disclosure. FIG. 10 illustrates a part of a workpiece support according to an exemplary embodiment of the present disclosure. Specific details for implementing the invention

[0008] Now, one or more examples of embodiments illustrated in the drawings will be referred to in detail. Each example is provided as an illustrative description of an embodiment, not as a limitation to the present disclosure. In fact, it will be obvious to those skilled in the art that various modifications and changes may be made without departing from the scope or technical spirit of the present disclosure. For example, features exemplified or described as part of one embodiment may be used in conjunction with other embodiments to yield additional embodiments. Accordingly, aspects of the present disclosure are intended to include such modifications and variations.

[0009] Aspects of the present disclosure are discussed with reference to "workpiece," "wafer," or semiconductor wafer for the sake of example and discussion. Using the disclosures provided herein, a person skilled in the art will understand that exemplary aspects of the present disclosure may be used in connection with any semiconductor substrate or other suitable substrate. Additionally, the use of the term "about" in relation to numbers is intended to indicate within 10 percent (10%) of the specified number. "Pedestal" refers to any structure that may be used to support the workpiece. "Remote plasma" refers to plasma generated remotely from the workpiece, such as in a plasma chamber separated from the workpiece by a separation grid. "Direct plasma" refers to plasma directly exposed to the workpiece, such as plasma generated in a processing chamber having a workpiece support operable to support the workpiece.

[0010] As used in this specification, the use of the term “about” in relation to the mentioned figures may include a value range within 10% of the specified figures.

[0011] Conventional plasma processing devices include a workpiece support that may include an electrostatic chuck. Generally, an electrostatic chuck comprises one or more electrodes embedded in a ceramic puck. When the electrodes are electrically charged, the difference in electrostatic charge between the electrodes and the workpiece will secure the workpiece to the workpiece support. Conventional electrostatic chucks include monopolar (e.g., single electrode) or bipolar (e.g., two electrode) designs. However, the inventors have discovered that the electrostatic force generated by the electrodes can create process non-uniformity in the workpiece. For example, conventional bipolar electrostatic chucks can cause side-to-side etch rate non-uniformity patterns due to the electrode layout, which have a distinct side-to-side pattern in the electric field distribution due to the corresponding power source or the connection of the electrodes to the power sources.

[0012] Accordingly, exemplary embodiments of the present disclosure provide a unique radial layout for a chucking (e.g., clamping) electrode. The chucking electrode is thermally insulated and electrically connected in such a manner that it creates a total of four insulating zones in the chucking electrode. Generally, exemplary embodiments of the present disclosure relate to an electrostatic chuck comprising a clamping layer having one or more clamping electrodes. The clamping electrode comprises a first clamping electrode defining a first clamping zone and a second clamping zone. The clamping electrode comprises a second clamping electrode defining a third clamping zone and a fourth clamping zone. The first clamping zone and the second clamping zone are separated by a first gap. The first clamping zone and the second clamping zone are electrically connected by at least one electrical connection extending across the first gap. The third clamping zone and the fourth clamping zone are separated by a second gap. The third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap.

[0013] The first and second clamping electrodes may be arranged radially such that the first clamping zone is radially inner, the second clamping zone is radially inner from the third clamping zone and radially outer from the first clamping zone, and the third clamping zone is radially inner from the fourth clamping zone and radially outer from the second clamping zone. The clamping zones may correspond to the arrangement of one or more heating zones defined in a heating layer having heating electrodes.

[0014] Additionally, the electrostatic chuck may include a thermal control system. The thermal control system may include a layer disposed within the chuck to distribute a heat exchange fluid or gas (e.g., helium). The thermal control system may include one or more flow channels interconnected to one or more release apertures disposed in specific release zones. For example, in an embodiment, the release zones of the apertures may be arranged in a radial pattern corresponding to a clamping zone and / or a heating zone. For example, a first release aperture zone may be located radially inward, and a second release aperture zone may be located radially outward from the first release aperture zone. A third release aperture zone may be located radially outward from the second release aperture zone and radially inward from the fourth release aperture zone.

[0015] In certain embodiments, the electrostatic chuck may also include a sealing band. The sealing band is generally positioned on top of at least a portion of the workpiece support surface of the electrostatic chuck, and more specifically, the sealing band surrounds the outer circumference of the electrostatic chuck. The sealing band is configured to have a width (W1) greater than about 3 millimeters (mm) and up to about 10 mm. Setting the size of the sealing band according to an exemplary aspect of the present disclosure provides a more robust sealing band that can better withstand processing and cleaning conditions without damage that may result in leakage of heat exchange gases.

[0016] An electrostatic chuck according to one embodiment of the present disclosure can provide many advantages and technical effects. For example, at least two clamping electrodes may be arranged radially and connected to create at least four thermally insulated zones. Each thermally insulated zone may be controlled to improve process uniformity. Additionally, electrostatic chuck bias compensation (e.g., chucking voltage offset) may be used to actively control etching rate uniformity and / or chemical vapor deposition for the workpiece during processing. Furthermore, positioning specific heating zones and / or emission opening zones as provided may further enhance temperature control in the radial and azimuthal directions across the workpiece. Additionally, setting the size of the sealing band as provided herein ensures that the sealing band is more durable and less susceptible to corrosion due to plasma exposure, thus reducing the likelihood of heat exchange gas leakage around the perimeter of the workpiece.

[0017] Referring to FIGS. 1 and 2, for example, an embodiment of a workpiece processing system (100) manufactured according to the present disclosure is illustrated. In the embodiment illustrated in FIG. 1, the system includes a process chamber (9). The process chamber (9) includes a workpiece processing station (13). The processing station (13) includes a workpiece support (12) manufactured according to the present disclosure. The process chamber illustrated in FIG. 1 includes one processing station (13) for processing a single workpiece, such as a semiconductor wafer. However, it should be understood that the process chamber (9) may include more than one processing station in other embodiments. As illustrated, the processing station (13) includes a processing area (14). The processing area (14) communicates with an isolation valve (17). The isolation valve (17) is opened and closed to allow the workpiece to be exchanged. The isolation valve (17) seals the wall (10) of the process chamber.

[0018] In the illustrated embodiment, the workpiece support (12) or at least a portion of the workpiece support comprises an electrostatic chuck (24). The electrostatic chuck (24) is configured to generate an electrostatic force that holds the workpiece (16) onto the upper surface of the workpiece support. More specifically, the electrostatic chuck functions by applying a single unipolar or two bipolar DC high voltage between the electrostatic chuck and the workpiece. For example, two bipolar DC voltages generate both positive and negative charges on one side of the first dielectric layer (28). These charges generate a Coulomb force that attracts between the upper surface of the workpiece support (12) and the workpiece (16). As described in more detail below, the workpiece support (12) comprises a clamping layer having one or more clamping electrodes that enable the electrostatic chuck function. However, it should be understood that the teachings and principles of the present disclosure are applicable to other workpiece supports that do not necessarily require the inclusion of an electrostatic chuck.

[0019] A processing station (13) is configured to receive a workpiece (16) on a workpiece support (12). When a workpiece (16), such as a semiconductor wafer, is loaded into a process chamber, an energy source is applied to the workpiece (16) so that the workpiece (16) undergoes a desired physical and / or chemical change. Energy sources that can be used to process the workpiece may include, for example, an ion source, a reactive chemical source, a heat source, a plasma source, or a mixture thereof. Heat sources that can be used to apply energy to the workpiece include light energy sources such as a plasma arc lamp, a tungsten halogen lamp, a microwave heater, an induction heater, a resistive heater, or a mixture thereof.

[0020] In a specific embodiment, the process chamber (9) includes a plasma source for applying plasma to a workpiece. The plasma is supplied by one or more induction coils (39) that communicate with an RF impedance matching device (not shown) and an RF power source (not shown). Although only one induction coil (39) is shown, the present disclosure is not limited thereto. In practice, any number of induction coils may be provided to generate plasma in the process chamber (9).

[0021] The workpiece processing system (100) of FIG. 1 is provided for explanation and discussion. Using the disclosure provided herein, a person skilled in the art will understand that electrostatic chuck(s) according to exemplary embodiments of the disclosure may be used in any suitable processing system (e.g., any suitable plasma processing system).

[0022] Now, referring to FIG. 2, as illustrated, the workpiece support (12) includes a workpiece receiving surface (18) defined by a dielectric portion (20). The dielectric portion (20) is positioned on top of a base comprising a first base portion (22) positioned on top of a second base portion (15) in this embodiment. In the embodiment, the combination of the dielectric portion (20), the first base portion (22), and the second base portion (15) may be referred to as an electrostatic chuck (24). The electrostatic chuck (24) and representative layers are made of any suitable metal or ceramic material. For example, in one embodiment, the base portion (22, 15) may be made of aluminum. Additionally, the electrostatic chuck (24) may include alumina, aluminum nitride, yttria, zirconia, and / or any other chemical-resistant ceramic or plastic material. The electrostatic chuck (24) is attached to a workpiece support base (57). The purpose of the base (57) is to provide rigid mechanical support for the electrostatic chuck (24) and to provide thermal and electrical insulation from the process chamber (9).

[0023] As described above, the dielectric portion (20) is positioned on top of the first base portion (22) and defines the workpiece receiving surface (18). The dielectric portion (20) may be made of any suitable dielectric material, such as a ceramic material. The dielectric portion may include multiple dielectric material layers or a single layer. In an embodiment, the dielectric portion (20) includes a first dielectric layer (28) positioned on top of a thicker second dielectric layer (30). The first dielectric layer (28) may have a thickness of, for example, about 0.4 to about 1 mm, while the second dielectric layer (30) may have a thickness of about 2 mm to about 5 mm.

[0024] As shown in FIG. 2, the workpiece support (12) may further communicate with an RF conduit (36) communicating with an RF impedance matching device (not shown) communicating with an RF power source (38) to supply RF bias power to the workpiece.

[0025] In an alternative embodiment, RF source power may be coupled to the workpiece support (12) through an RF impedance matching device (not shown) communicating with the RF conduit (36). In this embodiment, no additional RF power is supplied to the processing station (13). In an alternative embodiment, no RF source power is coupled to the workpiece support (12). During workpiece processing, the RF power may be activated to generate ions and electrons in the plasma for a desired chemical reaction with the upper surface of the workpiece (16). In another embodiment, the RF power source provides independent control of the energy possessed by the ions when they strike the upper surface of the workpiece. Both the RF power source and the DC power source may be grounded using any suitable technique. In one embodiment, for example, both the RF power source and the DC power source may be grounded to an electrode communicating with the processing chamber. In the illustrated embodiment, the process chamber uses inductively coupled RF power to generate and maintain the plasma required for workpiece processing. RF bias power is capacitively coupled to the plasma through the workpiece support (12).

[0026] To load and unload a workpiece onto a workpiece receiving surface (18), the workpiece support (12) may include any suitable mounting device. For example, in one embodiment, the workpiece support (12) may include a plurality of lift pins (not shown) that can be used to properly position the workpiece (16) on the workpiece receiving surface (18) and to raise and lower the workpiece (16) on the workpiece receiving surface. In this regard, the workpiece support (12) may include a plurality of pin channels for a lift pin assembly. In one embodiment, for example, the workpiece support (12) may include three pin channels for receiving three pins.

[0027] In an embodiment, the workpiece processing system (100) may include a controller (175). The controller (175) controls various components within the process chamber (9) to direct the processing of the workpiece (16). For example, the controller (175) may be used to control power (e.g., DC power, AC power, and / or RF power) connected to electrodes in the clamping layer (40) and / or heating layer (50). Additionally and / or alternatively, the controller (175) may be used to control a thermal management system (70) to control or maintain a desired workpiece temperature. Furthermore, the controller (175) may implement one or more process parameters to control a gas flow controller and / or change the state of the processing chamber (9), for example, during the processing of the workpiece (16). The controller (175) may include, for example, one or more processors and / or one or more memory devices. One or more memory devices may store computer-readable instructions that, when executed by one or more processors, cause one or more processors to perform an operation such as any of the control operations described herein.

[0028] Now, referring to FIG. 3, the electrostatic chuck (24) portion of the workpiece support (12) is illustrated. As illustrated, the workpiece (16) is placed on the workpiece receiving surface (18). A sealing band (80) is placed around the perimeter of the electrostatic chuck (24) and on at least a portion of the workpiece receiving surface (18). The sealing band (80) will be discussed further in this specification. A clamping layer (40) is placed between the first dielectric layer (28) and the second dielectric layer (30). The clamping layer (40) may include one or more clamping zones (42, 44, 46, 48), which will be discussed further in this specification. A heating layer (50) is placed below the clamping layer (40) in the z-direction. The heating layer (50) may be placed within the second dielectric layer (30) or between the second dielectric layer (30) and the first base portion (22). The heating layer comprises one or more heating zones (52, 54, 56, 58), which will be discussed further in this specification. A thermal control system (70) is disposed in the electrostatic chuck (24). The thermal control system (70) may be disposed within the second dielectric layer (30) or the first base portion (22). Similar to the clamping layer (40) and the heating layer (50), the thermal control system (70) comprises one or more zones (72, 74, 76, 78) of a discharge opening (73) for discharging a heat exchange fluid or gas to control the temperature of the workpiece (16). The thermal control system (70) will be discussed further in this specification.

[0029] As illustrated in FIGS. 3 and 4, in one embodiment, a clamping layer (40) comprising one or more clamping electrodes may be positioned within the electrostatic chuck (24) to form the electrostatic chuck (24). For example, in one embodiment, the clamping layer (40) may be positioned between a first dielectric layer (28) and a second dielectric layer (30). One or more clamping electrodes present in the clamping layer (40) may be arranged to communicate with a DC power source (34) as illustrated in FIG. 2. Two different DC voltages may be supplied by a single DC power source or two independent power sources. The DC power source (34) supplies the voltage required to generate an electric field to create an electrostatic attraction between the workpiece receiving surface (18) and the workpiece (16) held on the surface. The amount of voltage generated by the DC power source may be used to adjust the amount of electrostatic attraction. Additionally, when it is necessary to remove the workpiece (16) from the workpiece support (12), the DC power source may be turned off so that no voltage is generated, or may generate a voltage of opposite polarity from the starting potential. The DC voltage typically varies from about 500 volts to 2000 volts.

[0030] As illustrated in FIG. 4, the clamping layer (40) may include one or more electrodes, such as at least two electrodes (41, 43) arranged in a radial arrangement. The first clamping electrode (41) may be connected to a negative charge source, while the second clamping electrode (43) may be connected to a positive charge source. However, in other embodiments, it is considered that either the first or second clamping electrode (41, 43) may be coupled to a positive or negative charge source. For example, in one embodiment, the first clamping electrode (41) is connected to a negative DC voltage and the second clamping electrode (43) is connected to a positive DC voltage. Additionally, the first clamping electrode (41) and the second clamping electrode (43) may be connected to a DC power source, an AC power source, and / or an RF power source. In one embodiment, both the first clamping electrode (41) and the second clamping electrode (43) may be connected to the same RF power source.

[0031] Additionally, as illustrated in FIG. 4, the clamping layer (40) includes a first clamping electrode (41) and a second clamping electrode (43) arranged in a radial arrangement. That is, the first clamping electrode (41) is arranged radially inward from the second clamping electrode (43). The first clamping electrode (41) defines a first clamping zone (48) and a second clamping zone (46). The second clamping electrode (43) defines a third clamping zone (44) and a fourth clamping zone (42). As illustrated, the first clamping zone (48) is arranged radially inward. The second clamping zone (46) is arranged radially outward from the first clamping zone (48) and radially inward from the third clamping zone (44). The fourth clamping zone (42) is arranged radially outward.

[0032] Each of the clamping zones (42, 44, 46, 48) may be thermally insulated from one another. For example, the first clamping zone (48) and the second clamping zone (46) may be separated by a gap (45a). Additionally, the third clamping zone (44) and the fourth clamping zone (42) may be separated by a gap (45b). Additionally, the gap (45a) reduces heat conduction between the first clamping zone (48) and the second clamping zone (46), and the second gap (45b) reduces heat conduction between the third clamping zone (44) and the fourth clamping zone (42). The gaps (45a, 45b) may include an air gap or may include any suitable material. For example, in certain embodiments, the gaps (45a, 45b) include a dielectric material (e.g., a ceramic material).

[0033] One or more electrical connections (47) may be used to connect the first clamping zone (48) to the second clamping zone (46). For example, multiple electrical connections (47), such as at least five electrical connections (47), may be used. Similarly, one or more electrical connections (49) may be used to connect the third clamping zone (44) to the fourth clamping zone (42). The number of electrical connections (49) may be greater than one, for example, more than five, or more than ten. In a particular embodiment, the number of electrical connections (47) connecting the first and second clamping zones (48, 46) may be less than the number of electrical connections (49) connecting the third and fourth clamping zones (44, 42).

[0034] Each of the two clamping electrodes (41, 43) is thermally insulated into two zones, but they are connected via an electrical connection (47 or 49) to maintain them at approximately the same potential. For example, in an embodiment, the first clamping zone (48) and the second clamping zone (46) deliver the same chucking voltage to the positive electrode, while the third clamping zone (44) and the fourth clamping zone (42) deliver the same chucking voltage to the negative electrode. Generally, the offset between the positive and negative chucking voltages may be intended to balance the clamping force to compensate for the self-DC bias to the workpiece, or it may be intentionally operated in an unbalanced mode for the purpose of uniformity tuning. For example, a workpiece may be processed and the uniformity of the workpiece may be evaluated. Depending on the evaluation of whether there is a problem with uniformity, the electrostatic chuck bias may be adjusted to adjust the workpiece uniformity for workpieces to be processed in the future. For example, the clamping voltage of the first clamping electrode (41) or the second clamping electrode (43) can be adjusted to adjust workpiece uniformity.

[0035] Additionally, as mentioned, the clamping electrodes (41, 43) may be connected to any suitable power or voltage source (e.g., DC power or RF power). In certain embodiments, the clamping electrodes (41, 43) are connected to a voltage source (e.g., DC high voltage source), and the voltage source is configured to provide DC offset adjustment to balance one or more clamping forces or to adjust workpiece processing uniformity. In certain configurations, the clamping electrodes are coupled to a bipolar high voltage supply (e.g., a bipolar DC high voltage supply). In certain configurations, each of the clamping zones (42, 44, 46 and / or 48) may operate independently of each other to adjust workpiece uniformity. For example, in an embodiment, different amounts of power output and / or different power sources themselves may be applied to any clamping zones (42, 44, 46, 48) to adjust workpiece uniformity. For example, different amounts of DC voltage, RF power output, and / or different power sources may be applied to any clamping zones (42, 44, 46, 48) to adjust workpiece uniformity. For example, in a specific embodiment, the application of different amounts of DC voltage and / or RF power across the clamping zones (42, 44, 46, 48) may modify the clamping electrodes (41, 43) to provide a tripolar or quadrapolar electrostatic chuck. Additionally, the clamping electrodes may be connected to a DC power source or an RF power source having one or more capacitors placed along the RF path to prevent the DC voltage from interfering with or accessing the RF transmission. Additionally, or alternatively, an inductor and / or resistor connected in series may be placed in the DC path to prevent the RF voltage from accessing the DC voltage supply.

[0036] Additionally, one or more traces may be used to arrange the clamping zones (42, 44, 46, 48) in any type of electrical configuration. For example, the first clamping zone (48) and the third clamping zone (44) may be electrically coupled to one or more traces embedded in the layer of the electrostatic chuck (24) to form the first clamping electrode (41), and the second clamping zone (46) and the fourth clamping zone (42) may be electrically coupled to one or more traces embedded in the layer of the electrostatic chuck (24) to form the second clamping electrode (43). Furthermore, in an embodiment, the first clamping zone (48) and the fourth clamping zone (42) may be electrically coupled to one or more traces embedded in the layer of the electrostatic chuck (24) to form the first clamping electrode (41), and the second clamping zone (46) and the third clamping zone (44) may be electrically coupled to one or more traces embedded in the layer of the electrostatic chuck (24) to form the second clamping electrode (43). In this embodiment, the traces used to connect the different clamping zones (42, 44, 46, 48) may generally be located in the layer of the electrostatic chuck below the clamping layer (40). When the selected clamping zones are connected via the traces, the traces may be connected to any suitable power source as described herein.

[0037] In one or more embodiments, the heating layer (50) may be disposed within the workpiece support (12). For example, FIG. 5 illustrates different sections of the heating layer (50). For example, the heating layer (50) may include one or more electrodes (51), such as a plurality of electrodes (51a, 51b, 51c, 51d) arranged in a radial pattern. For example, in a specific embodiment, the heating layer (50) includes at least four electrodes (51a, 51b, 51c, 51d). Each of the electrodes (51a, 51b, 51c, 51d) may be connected to a suitable AC or DC power source. In a specific embodiment, a plurality of heating electrodes (51a, 51b, 51c, 51d) are arranged radially to form a first heating zone (58), a second heating zone (56), a third heating zone (54), and a fourth heating zone (52) as shown in FIG. 5. The heating zones (52, 54, 56, 58) may be arranged in any manner on or within the heating layer (50) in the electrostatic chuck (24).

[0038] In a specific embodiment, the heating zones (52, 54, 56, 58) correspond to the clamping zones (42, 44, 46, 48) present in the clamping layer (40). For example, as shown in FIG. 3, the first heating zone (58) is positioned below the first clamping zone (48) in the z-direction. The second heating zone (56) is positioned below the second clamping zone (46) in the z-direction. The third heating zone (54) is positioned below the third clamping zone (44) in the z-direction. The fourth heating zone (52) is positioned below the fourth clamping zone (42) in the z-direction. Additionally, the width of the heating zones (52, 54, 56, 58) is substantially the same as the width of the clamping zones (42, 44, 46, 48). For example, the width of the first heating zone (58) is substantially the same as the width of the first clamping zone (48). The width of the second heating zone (56) is substantially the same as the width of the second clamping zone (46). The width of the third heating zone (54) is substantially the same as the width of the third clamping zone (44). The width of the fourth heating zone (52) is substantially the same as the width of the fourth clamping zone (42). The arrangement of the heating zones (52, 54, 56, 58) relative to the clamping zones (42, 44, 46, 48) can help with thermal insulation from zone to zone in the radial direction. Additionally, each heating zone (52, 54, 56, 58) overlaps with the corresponding clamping zone (42, 44, 46, 48) to help with heat transfer from zone to zone in the radial direction.

[0039] Each of the heating zones (52, 54, 56, 58) can be independently controlled to adjust heating across different radial regions of the workpiece during processing. For example, each heating zone (52, 54, 56, 58) can be formed from at least one electrode, and each individual electrode (e.g., 51a, 51b, 51c, 51d) used to form a separate heating zone (52, 54, 56, 58) can be independently connected to a power source. Thus, different amounts and / or types of power can be supplied to each electrode to adjust the temperature for each of the heating zones (52, 54, 56, 58).

[0040] To connect each electrode (e.g., clamping electrode and / or heating electrode) present in the electrostatic chuck to a suitable power source or a desired power source, one or more traces and / or vias may be used to connect the electrodes to the power source. Referring to FIGS. 6 through 8, for example, in a specific embodiment, a trace (60) is used to connect the second clamping electrode (43) to a suitable power source. For example, the trace (60) may be connected from the second electrode (43) toward the center of the clamping layer (40). In a specific embodiment, the trace (60) is connected in a layer located below the clamping electrodes (41, 43) toward a centrally located transfer socket location(s) to connect the second clamping electrode (43) to a suitable power source. Additionally, in an embodiment, one or more vias (61) may be used to connect the trace (60) to the second electrode (43) and the transfer socket location. A via (61) may be used to connect a trace (60) in a layer below the clamping layer (40). That is, the trace (60) is not located in the same plane orthogonal to the clamping layer (40) in the z-direction. Similarly, one or more traces (60) may be connected from each of the heating electrodes (e.g., 51a, 51b, 51c, 51d) toward a centrally located transfer socket position to connect the heating electrode to a suitable power source. Similar to the clamping electrode arrangement, one or more vias may be used to connect a trace (60) below the heating layer (50). That is, the trace (60) (or traces) used to connect the heating electrode to the power source(s) is not located in the same plane orthogonal to the heating layer (50) in the z-direction.

[0041] In a specific embodiment, the workpiece support (12) may further include a thermal control system (70). The thermal control system (70) may include one or more channels (71) for circulating a heat exchange fluid or a heat exchange gas (e.g., helium). The thermal control system (70) may be included as a layer disposed within the electrostatic chuck. For example, in a specific embodiment, the thermal control system (70) layer may be located below the workpiece (16) when the workpiece is placed on the workpiece support (12). For example, in a specific embodiment, the thermal control system (70) may be placed between the workpiece (16) and the clamping layer (40). However, in other specific embodiments, the thermal control system (70) is considered to be located between the clamping layer (40) and the heating layer (50) or below the heating layer (50). The thermal control system (70) may be disposed within the electrostatic chuck in any manner suitable for processing the workpiece (16) in the processing chamber. Referring again to FIG. 3, the heat control system (70) is positioned below both the clamping layer (40) and the heating layer (50) in the z-direction.

[0042] As illustrated in FIG. 9, the thermal control system (70) includes one or more channels (71) and also includes one or more discharge openings (73). One or more channels (71) are interconnected to each of the discharge openings (73) through a pattern. The discharge openings (73) may be organized according to zones (72, 74, 76, 78) of the discharge openings (73). A single heat exchange fluid or heat exchange gas inlet (75) is illustrated. For example, in an embodiment, the thermal control system (70) includes a first zone (78) of the discharge opening (73), a second zone (76) of the discharge opening (73), a third zone (74) of the discharge opening (73), and a fourth zone (72) of the discharge opening (73). The first zone (78) of the discharge opening (73) is positioned radially inward. The second zone (76) of the discharge opening (73) is positioned radially outward from the first zone (78) of the discharge opening (73) and radially inward from the third zone (74) of the discharge opening (73). The third zone (74) of the discharge opening (73) is discharged radially inward from the fourth zone and radially outward from the second zone (76) of the discharge opening (73). Although at least four zones of the discharge opening (73) (e.g., 72, 74, 76, 78) are illustrated, the present disclosure is not so limited. In practice, any number of zones of the discharge opening may be configured within the thermal control system (70) disclosed herein. Additionally, the first zone (78) of the discharge opening (73) contains the fewest number of discharge openings (73) compared to the other zones (72, 74, 76). The second zone (76) of the emission opening (73) contains more emission openings (73) than the first zone (78), but contains fewer emission openings (73) compared to the third zone (74) of the emission opening (73).The third zone (74) of the discharge opening (73) contains more discharge openings (73) than the second zone (76) of the discharge opening (73), but contains fewer discharge openings (73) compared to the fourth zone (72) of the discharge opening (73). The fourth zone (72) of the discharge opening (73) contains the most discharge openings (73) compared to the other zones (74, 76, 78).

[0043] In an embodiment, each zone (72, 74, 76, 78) of the emission opening (73) generally corresponds to one or more heating zones (52, 54, 56, 58) and / or clamping zones (42, 44, 46, 48), respectively. That is, the zones (72, 74, 76, 78) of the emission opening (73) may be positioned below or above the corresponding zones of the clamping layer (40) and the heating layer (50). Such a position is illustrated in FIG. 3. In a specific embodiment, the zones (72, 74, 76, 78) of the emission opening may be positioned in a layer located below both the clamping layer (40) and the heating layer (50). Accordingly, one or more heat exchange conduits may be drilled through the workpiece receiving surface (18), the clamping layer (40), and the heating layer (50) so that a heat exchange fluid or gas emitted from the discharge opening (73) located in each section (72, 74, 76, 78) may come into contact with the back of the workpiece (16) and adjust the temperature of the workpiece (16). However, in another embodiment, the heat control system (70) may be located directly below the workpiece (16) when maintained on the workpiece support (12). For example, the sections (72, 74, 76, 78) of the discharge opening (73) may be located within the first dielectric layer (28) or directly below the first dielectric layer (28). In an embodiment, one or more conduits may be drilled through only the first dielectric layer (28) so that a heat exchange fluid or gas discharged from a discharge opening (73) located in each zone (72, 74, 76, 78) can come into contact with the back of the workpiece (16) to adjust the temperature of the workpiece (16).

[0044] Now, referring to FIG. 1, in a specific embodiment (e.g., an embodiment including a thermal control system capable of helium distribution), the electrostatic chuck (24) may include a sealing band (80). The sealing band (80) generally surrounds the outer circumference of the electrostatic chuck (24), which includes at least a portion of the workpiece receiving surface (18). The sealing band (80) is configured to have a width (W1) such as greater than about 3 millimeters (mm) and up to about 10 mm, e.g., greater than 4 mm and up to about 9 mm, greater than 5 mm and up to about 8 mm, greater than 5 mm and up to about 7 mm. The sealing band (80) is generally located at the top of the electrostatic chuck (24) to seal any heat exchange fluid and / or gas (e.g., helium) under the workpiece (16) when the workpiece (16) is chucked to the electrostatic chuck (24). Additionally, electrostatic chucks often undergo in-situ dry-cleaning (ISD) and may undergo off-situ cleaning during maintenance. If the sealing band is damaged or worn out after several hours of use or during cleaning, such damage may cause leakage of heat exchange gas (e.g., helium), which may prevent the workpiece temperature from being maintained normally. Furthermore, if heat exchange gas (e.g., helium) seeps around the sealing band and can access the top of the workpiece during the process, this may cause additional uniformity issues during workpiece processing. Therefore, the width (W1) of the sealing band (80) provided herein is intended to make the sealing band (80) more robust and better withstand processing and cleaning conditions without damage, so that there is no possibility of heat exchange gas leakage.

[0045] Although the subject matter has been described in detail with respect to specific exemplary embodiments thereof, it will be understood by those skilled in the art that, as they gain an understanding of the foregoing, alternatives to these embodiments, modifications thereof, and equivalents thereof can be easily made. Accordingly, the scope of the present disclosure is illustrative and not limiting, and as will be obvious to those skilled in the art, the present disclosure does not exclude such modifications, variations, and / or additional inclusions to the subject matter.

Claims

Claim 1 An electrostatic chuck comprising: a workpiece support surface configured to support a workpiece during processing; a thermal control system disposed within the electrostatic chuck; and a clamping layer comprising one or more clamping electrodes, wherein the clamping layer comprises: A first clamping electrode defining a first clamping zone and a second clamping zone - said first clamping zone and said second clamping zone are separated by a first gap, and said first clamping zone and said second clamping zone are electrically connected by at least one electrical connection extending across said first gap -; and An electrostatic chuck comprising: a second clamping electrode disposed radially outward from the first clamping electrode and defining a third clamping zone and a fourth clamping zone—the third clamping zone and the fourth clamping zone are separated by a second gap, and the third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap. Claim 2 In claim 1, the thermal control system comprises one or more emission opening zones, an electrostatic chuck. Claim 3 In paragraph 2, the thermal control system comprises an electrostatic chuck including a first emission opening zone, a second emission opening zone, a third emission opening zone and a fourth emission opening zone. Claim 4 An electrostatic chuck according to paragraph 3, wherein the first emission opening zone is positioned radially inward, the second emission opening zone is positioned radially outward from the first emission opening zone and radially inward from the third emission opening zone, the third emission opening zone is positioned radially outward from the second emission opening zone and radially inward from the fourth emission opening zone, and the fourth emission opening zone is positioned radially outward. Claim 5 In paragraph 3, the electrostatic chuck wherein the first discharge opening zone is positioned below the first clamping zone, the second discharge opening zone is positioned below the second clamping zone, the third discharge opening zone is positioned below the third clamping zone, and the fourth discharge opening zone is positioned below the fourth clamping zone. Claim 6 In paragraph 3, the first emission opening area comprises fewer emission openings compared to the second emission opening area, the third emission opening area, and the fourth emission opening area; the second emission opening area comprises fewer emission openings compared to the third emission opening area and the fourth emission opening area; the third emission opening area comprises fewer emission openings compared to the fourth emission opening area; and the fourth emission opening area comprises more emission openings compared to the first emission opening area, the second emission opening area, and the third emission opening area. Claim 7 In claim 1, the thermal control system comprises one or more channels, an electrostatic chuck. Claim 8 An electrostatic chuck according to claim 1, comprising a sealing band disposed around the outer circumference of the electrostatic chuck. Claim 9 In claim 8, the electrostatic chuck is configured such that the sealing band seals the heat exchange fluid between the back of the workpiece and the electrostatic chuck when the workpiece is chucked to the electrostatic chuck. Claim 10 In claim 8, the above-mentioned sealing band has a width ranging from about 3 mm to about 10 mm, an electrostatic chuck. Claim 11 An electrostatic chuck according to claim 1, comprising one or more heat exchange conduits disposed through the workpiece support surface and / or the clamping layer, configured to allow a heat exchange fluid to contact the rear side of the workpiece. Claim 12 A workpiece processing device comprising: a processing chamber; and a workpiece support disposed within the processing chamber, wherein the workpiece support comprises: An electrostatic chuck comprising a workpiece support surface configured to support a workpiece during processing, a thermal control system, and a clamping layer comprising one or more clamping electrodes, wherein the clamping layer A first clamping electrode defining a first clamping zone and a second clamping zone - said first clamping zone and said second clamping zone are separated by a first gap, and said first clamping zone and said second clamping zone are electrically connected by at least one electrical connection extending across said first gap -; and A workpiece processing device comprising: a second clamping electrode disposed radially outward from the first clamping electrode and defining a third clamping zone and a fourth clamping zone—the third clamping zone and the fourth clamping zone are separated by a second gap, and the third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap—the first gap reduces heat conduction between the first clamping zone and the second clamping zone, and the second gap reduces heat conduction between the third clamping zone and the fourth clamping zone. Claim 13 In paragraph 12, the heat control system comprises one or more emission opening zones, a workpiece processing device. Claim 14 In paragraph 13, the heat control system comprises a first emission opening zone, a second emission opening zone, a third emission opening zone and a fourth emission opening zone, a workpiece processing device. Claim 15 A workpiece processing device according to claim 14, wherein the first discharge opening zone is positioned radially inward, the second discharge opening zone is positioned radially outward from the first discharge opening zone and radially inward from the third discharge opening zone, the third discharge opening zone is positioned radially outward from the second discharge opening zone and radially inward from the fourth discharge opening zone, and the fourth discharge opening zone is positioned radially outward. Claim 16 A workpiece processing device according to claim 14, wherein the first discharge opening zone is positioned below the first clamping zone, the second discharge opening zone is positioned below the second clamping zone, the third discharge opening zone is positioned below the third clamping zone, and the fourth discharge opening zone is positioned below the fourth clamping zone. Claim 17 A workpiece processing device according to claim 14, wherein the first emission opening zone comprises fewer emission openings compared to the second emission opening zone, the third emission opening zone, and the fourth emission opening zone; the second emission opening zone comprises fewer emission openings compared to the third emission opening zone and the fourth emission opening zone; the third emission opening zone comprises fewer emission openings compared to the fourth emission opening zone; and the fourth emission opening zone comprises more emission openings compared to the first emission opening zone, the second emission opening zone, and the third emission opening zone. Claim 18 In Clause 12, the above-mentioned heat control system is a workpiece processing device comprising one or more channels. Claim 19 A workpiece processing device according to claim 12, comprising a sealing band disposed around the outer circumference of the electrostatic chuck, wherein the sealing band is configured to seal a heat exchange fluid between the back of the workpiece and the electrostatic chuck when the workpiece is chucked to the electrostatic chuck. Claim 20 A workpiece processing system comprising: a processing chamber configured to perform at least one processing process on a workpiece; a workpiece support disposed within the processing chamber and comprising an electrostatic chuck, wherein the electrostatic chuck is, A workpiece support surface configured to support the workpiece during processing; Thermal control system; A clamping layer comprising one or more clamping electrodes - said clamping layer, A first clamping electrode defining a first clamping zone and a second clamping zone - said first clamping zone and said second clamping zone are separated by a first gap, and said first clamping zone and said second clamping zone are electrically connected by at least one electrical connection extending across said first gap -; and A second clamping electrode disposed radially outward from the first clamping electrode and defining a third clamping zone and a fourth clamping zone—the third clamping zone and the fourth clamping zone are separated by a second gap, and the third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap—including The first gap reduces heat conduction between the first clamping zone and the second clamping zone, and the second gap reduces heat conduction between the third clamping zone and the fourth clamping zone -; and A workpiece processing system comprising: one or more power voltage sources coupled to one or more clamping electrodes and configured to provide DC offset adjustment to balance clamping force or adjust workpiece processing uniformity; and a controller configured to adjust power output or power voltage sources from the one or more power voltage sources to the one or more clamping electrodes. Claim 21 As an electrostatic chuck, a workpiece support surface configured to support a workpiece during processing; a clamping layer comprising one or more clamping electrodes - said clamping layer, A first clamping electrode defining a first clamping zone and a second clamping zone - said first clamping zone and said second clamping zone are separated by a first gap, and said first clamping zone and said second clamping zone are electrically connected by at least one electrical connection extending across said first gap -; and An electrostatic chuck comprising: a second clamping electrode disposed radially outward from the first clamping electrode and defining a third clamping zone and a fourth clamping zone—the third clamping zone and the fourth clamping zone being separated by a second gap, and the third clamping zone and the fourth clamping zone being electrically connected by at least one electrical connection extending across the second gap—; and one or more traces configured to electrically couple the one or more clamping electrodes to one or more power sources. Claim 22 An electrostatic chuck according to claim 21, wherein the first gap reduces heat conduction between the first clamping zone and the second clamping zone, and the second gap reduces heat conduction between the third clamping zone and the fourth clamping zone. Claim 23 In claim 21, the electrostatic chuck, wherein the first gap and / or the second gap comprises a ceramic material. Claim 24 An electrostatic chuck according to claim 21, wherein the first clamping electrode and the second clamping electrode are coupled to a voltage source, and the voltage source is configured to provide DC offset adjustment to balance the clamping force or adjust the uniformity of the workpiece processing. Claim 25 In claim 21, the first clamping electrode and the second clamping electrode are connected to a DC power source, an AC power source and / or an RF power source, an electrostatic chuck. Claim 26 In paragraph 25, the first clamping electrode and the second clamping electrode are connected to the same RF power source, an electrostatic chuck. Claim 27 In claim 21, the electrostatic chuck, wherein the first clamping electrode is coupled to a negative DC voltage and the second clamping electrode is coupled to a positive DC voltage. Claim 28 An electrostatic chuck according to claim 21, wherein the first clamping zone is positioned radially inward, the second clamping zone is positioned radially outward from the first clamping zone and radially inward from the third clamping zone, and the third clamping zone is positioned radially outward from the second clamping zone and radially inward from the fourth clamping zone. Claim 29 In claim 21, an electrostatic chuck in which different amounts of DC voltage, different amounts of RF power output and / or different power sources may be applied to the first clamping zone, the second clamping zone, the third clamping zone and / or the fourth clamping zone to adjust workpiece uniformity. Claim 30 An electrostatic chuck according to claim 21, further comprising a plurality of heating electrodes defining a heating layer, wherein the heating electrodes are arranged radially to form a first heating zone, a second heating zone, a third heating zone and a fourth heating zone. Claim 31 An electrostatic chuck according to claim 30, wherein the heating layer is disposed below the clamping layer in the z-direction, additionally, the first heating zone is disposed below the first clamping zone in the z-direction, the second heating zone is disposed below the second clamping zone in the z-direction, the third heating zone is disposed below the third clamping zone in the z-direction, and the fourth heating zone is disposed below the fourth clamping zone in the z-direction. Claim 32 A workpiece processing device comprising: a processing chamber; and a workpiece support disposed within the processing chamber, wherein the workpiece support comprises: A workpiece support surface configured to support the workpiece during processing; A clamping layer comprising one or more clamping electrodes - said clamping layer, A first clamping electrode defining a first clamping zone and a second clamping zone - said first clamping zone and said second clamping zone are separated by a first gap, and said first clamping zone and said second clamping zone are electrically connected by at least one electrical connection extending across said first gap -; and A second clamping electrode disposed radially outward from the first clamping electrode and defining a third clamping zone and a fourth clamping zone - the third clamping zone and the fourth clamping zone are separated by a second gap, and the third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap - Includes -; and A workpiece processing device comprising an electrostatic chuck including one or more traces configured to electrically couple one or more clamping electrodes to one or more power sources, wherein the first gap reduces heat conduction between the first clamping zone and the second clamping zone, and the second gap reduces heat conduction between the third clamping zone and the fourth clamping zone. Claim 33 A workpiece processing apparatus according to claim 32, comprising an inductively coupled plasma source capable of generating plasma in the processing chamber from one or more process gases. Claim 34 A workpiece processing apparatus comprising one or more heat sources capable of performing heat treatment on the workpiece according to claim 32. Claim 35 A workpiece processing device according to claim 32, wherein a negative DC voltage is applied to the first clamping electrode and a positive DC voltage is applied to the second clamping electrode. Claim 36 A workpiece processing device according to claim 32, wherein the first clamping zone is positioned radially inward, the second clamping zone is positioned radially outward from the first clamping zone and radially inward from the third clamping zone, and the third clamping zone is positioned radially outward from the second clamping zone and radially inward from the fourth clamping zone. Claim 37 A workpiece processing device according to claim 32, wherein different amounts of DC voltage, different amounts of RF power output, and / or different power sources may be applied to the first clamping zone, the second clamping zone, the third clamping zone, and / or the fourth clamping zone to adjust workpiece uniformity. Claim 38 A workpiece processing apparatus according to claim 32, further comprising a plurality of heating electrodes forming a heating layer disposed below the clamping layer in the z-direction, wherein the heating electrodes are arranged radially to form a first heating zone, a second heating zone, a third heating zone and a fourth heating zone. Claim 39 A workpiece processing device according to claim 38, wherein the first heating zone is positioned below the first clamping zone in the z-direction, the second heating zone is positioned below the second clamping zone in the z-direction, the third heating zone is positioned below the third clamping zone in the z-direction, and the fourth heating zone is positioned below the fourth clamping zone in the z-direction. Claim 40 A workpiece processing system comprising: a processing chamber configured to perform at least one processing process on a workpiece; a workpiece support disposed within the processing chamber and comprising an electrostatic chuck, wherein the electrostatic chuck is, A workpiece support surface configured to support the workpiece during processing; A clamping layer comprising one or more clamping electrodes - said clamping layer, A first clamping electrode defining a first clamping zone and a second clamping zone - said first clamping zone and said second clamping zone are separated by a first gap, and said first clamping zone and said second clamping zone are electrically connected by at least one electrical connection extending across said first gap -; and A second clamping electrode disposed radially outward from the first clamping electrode and defining a third clamping zone and a fourth clamping zone - the third clamping zone and the fourth clamping zone are separated by a second gap, and the third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap - Includes, The first gap reduces heat conduction between the first clamping zone and the second clamping zone, and the second gap reduces heat conduction between the third clamping zone and the fourth clamping zone -; and A workpiece processing system comprising: one or more traces configured to electrically couple one or more clamping electrodes to one or more power sources; one or more power voltage sources coupled to the one or more clamping electrodes and configured to provide DC offset adjustment to balance clamping force or adjust workpiece processing uniformity; and a controller configured to adjust power output or power voltage sources from the one or more power voltage sources to the one or more clamping electrodes.

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