Method for manufacturing a mask device and an organic device

Abstract

A mask device includes a mask and a frame connected to the mask. The mask includes a first layer and a second layer. The first layer includes a first surface, a second surface, and at least one first opening. The second layer includes a third surface facing the second surface, a fourth surface, and a plurality of second openings that overlap the first opening. The frame faces the first surface of the outer region of the first layer. When viewed in a plane, at least a portion of the frame extends to the outer edge of the first layer. The mask is fixed to the frame by screws.

Description

Technology Field

[0001] Embodiments of the present disclosure relate to a mask device and a method for manufacturing an organic device. Background Technology

[0002] A deposition method is known as a method for forming a precise pattern. In the deposition method, first, a mask having an opening is attached to a substrate. Subsequently, a deposition material is attached to the substrate through the opening of the mask. As a result, a deposition layer containing the deposition material is formed on the substrate in a pattern corresponding to the pattern of the opening of the mask. The deposition method is used, for example, as a method for forming pixels of an organic EL display device. Patent Document 1 discloses a mask used in the deposition method. Prior art literature

[0003] Japanese Patent Publication No. 2009-062565 The problem to be solved

[0004] If an opening is formed near the outer edge of the mask, the outer edge becomes prone to damage, making it difficult to handle the mask. Furthermore, when an opening is formed near the outer edge, the outer edge of the mask is narrow. As a result, when gripping the mask, there is a risk that not only the outer edge but also the area inside the outer edge—that is, the area where the opening of the mask is formed—will be gripped. In this case, there is a risk that the area where the opening of the mask is formed will be contaminated. Meanwhile, by forming an opening near the outer edge of the mask, it is required to enable the formation of a deposition layer over a wider area of ​​the substrate using a single mask.

[0005] The embodiments of the present disclosure aim to effectively solve these problems. means of solving the problem

[0006] A mask device according to one embodiment of the present disclosure comprises a mask and a frame connected to the mask, wherein the mask may include a first surface, a second surface located opposite to the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening when viewed in a plane, a first layer including a third surface facing the second surface, a fourth surface located opposite to the third surface, and a second layer including a plurality of second openings penetrating from the third surface to the fourth surface and overlapping with the first opening when viewed in a plane, and the frame may face the first surface of the outer region of the first layer, and when viewed in a plane, at least a portion of the frame may extend to the outer edge of the first layer, and the frame may be fixed to the mask by a screw. Effects of the invention

[0007] According to an embodiment of the present disclosure, handling of the mask becomes easier. Brief explanation of the drawing

[0008] Figure 1 is a plan view illustrating an example of an organic device. FIG. 2 is a drawing illustrating an example of a deposition apparatus equipped with a mask device. FIG. 3 is a plan view illustrating an example of a mask device when viewed from the incident plane side. FIG. 4 is a plan view illustrating an example of a mask device when viewed from the exit surface side. FIG. 5a is a cross-sectional view along the VV line of the mask device of FIG. 3. FIG. 5b is a drawing showing an enlarged view of the portion enclosed by the dashed line of the cross-section shown in FIG. 5a. FIG. 5c is a cross-sectional view illustrating an example of an effective area. Figure 6 is a drawing showing an enlarged view of the portion enclosed by the dashed line of the cross-section shown in Figure 5b. FIG. 7 is a drawing corresponding to FIG. 6 and illustrates a modified example of a mask device. FIG. 8 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 9 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 11 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 12 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 13 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 14 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 15 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 16 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 17 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 18 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 19 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 20 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 21 is a cross-sectional view illustrating an example of a method for manufacturing a mask device according to one embodiment. FIG. 22 is a drawing corresponding to FIG. 6 and is a cross-sectional view illustrating one modified example of a mask device. FIG. 23 is a drawing corresponding to FIG. 6 and is a cross-sectional view illustrating one modified example of a mask device. FIG. 24 is a drawing illustrating an example of a device having an organic device. Specific details for implementing the invention

[0009] In this specification and drawings, unless otherwise specifically stated, terms meaning materials forming the basis of any composition, such as "substrate," "sheet," and "film," are not distinguished from one another solely on the basis of differences in name.

[0010] In this specification and drawings, unless otherwise specified, terms such as "parallel" or "orthogonal" and values ​​of length or angle that specify shapes or geometric conditions and their degree, for example, are interpreted not strictly in their meaning but include a range sufficient to expect the same function.

[0011] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain member or area, is described as being "above" or "below," "upper" or "lower," or "upper" or "lower" of another component, such as another member or area, it includes cases where the component is in direct contact with the other component. It also includes cases where a separate component is included between the component and the other component, i.e., cases where they are indirectly in contact. Furthermore, unless otherwise specified, the expressions "above," "upper," or "upper," or "below," "lower," or "lower" may have their vertical directions reversed.

[0012] In this specification and drawings, unless otherwise specified, the state in which the surface of element A “opposes” the surface of element B includes not only the case where the surface of element A is in contact with the surface of element B, but also the case where element C is located between the surface of element A and the surface of element B. That is, the term “opposes” is a term indicating the direction of two surfaces.

[0013] In this specification and drawings, unless otherwise specified, identical or similar reference numerals are assigned to identical parts or parts having the same function, and repetitive descriptions thereof may be omitted. Additionally, for convenience of explanation, the dimensional ratios in the drawings may differ from the actual ratios, or parts of the components may be omitted from the drawings.

[0014] In this specification and drawings, unless otherwise specifically stated, one embodiment of this specification may be combined with other examples to the extent that there is no contradiction. Additionally, other examples may also be combined with each other to the extent that there is no contradiction.

[0015] In this specification and drawings, unless otherwise specifically stated, when two or more steps or processes regarding a method such as a manufacturing method are disclosed, other steps or processes not disclosed may be performed between the disclosed steps or processes. Furthermore, the order of the disclosed steps or processes is arbitrary to the extent that no inconsistencies arise.

[0016] In one embodiment of this specification, an example is described in which a mask is used to form an organic layer or an electrode on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment may be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form an electrode for a device for displaying or projecting images or videos to express virtual reality (VR) or augmented reality (AR). In addition, the mask of this embodiment may be used to form an electrode for a display device other than an organic EL display device, such as an electrode for a liquid crystal display device. Furthermore, the mask of this embodiment may be used to form an electrode for an organic device other than a display device, such as an electrode for a pressure sensor.

[0017] A first aspect of the present disclosure is,

[0018] Mask and,

[0019] The frame connected to the above mask

[0020] Equipped,

[0021] The above mask is,

[0022] A first layer comprising a first surface, a second surface located opposite to the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening when viewed in a plane, and

[0023] A second layer comprising a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping with the first opening when viewed in a plane.

[0024] Including,

[0025] The above frame faces the first surface of the outer region of the first layer, and

[0026] When viewed in a planar view, at least a portion of the frame extends to the outer edge of the first layer, and

[0027] The above mask is fixed to the above frame by a screw,

[0028] It is a mask device.

[0029] In a mask device according to the second embodiment according to the first embodiment described above,

[0030] The first layer above may include silicon or a silicon compound, and

[0031] The above frame may include glass or metal.

[0032] In a mask device according to the first embodiment or the third embodiment according to the second embodiment described above, a cushioning material may be provided between the mask and the frame.

[0033] In a mask device according to a fourth embodiment in accordance with any of the first to third embodiments described above,

[0034] The above mask and the above frame may be arranged in this order from the head portion of the screw toward the leg portion, and

[0035] A cushioning material may be provided between the tip of the leg portion of the above screw and the above frame.

[0036] In a mask device according to a fifth embodiment following any of the first to fourth embodiments described above,

[0037] The above mask and the above frame may be arranged in this order from the head portion of the screw toward the leg portion, and

[0038] The normal surface of the head portion of the screw may be a surface at the same height as the fourth surface of the second layer, or it may be located between the fourth surface and the first surface of the first layer.

[0039] In a mask device according to a sixth embodiment in accordance with any of the first to fifth embodiments described above, the mask may be fixed to the frame by two or more screws.

[0040] In a mask device according to a seventh embodiment in accordance with any of the first to sixth embodiments described above, the mask may be fixed to the frame by a pair or a plurality of screws, each of which is positioned with the plurality of second openings between them when viewed in a planar view.

[0041] In a mask device according to the eighth embodiment of any of the first to seventh embodiments described above, a stepped portion accommodating at least a portion of the mask may be formed in the frame.

[0042] In a mask device according to the ninth embodiment in accordance with any of the first to eighth embodiments described above, the mask may be detachably fixed to the frame.

[0043] In a mask device according to the 10th embodiment in accordance with any of the first to ninth embodiments described above, the screw may be composed of the same material as the frame.

[0044] The eleventh aspect of the present disclosure is a method for manufacturing an organic device, comprising a process of forming an organic layer on a substrate by a deposition method using a mask device according to any one of the first to ten aspects described above.

[0045] With reference to FIGS. 1 to 21, an embodiment is described. First, an organic device (100) having an organic layer formed by using a mask is described. FIG. 1 is a cross-sectional view illustrating an example of an organic device (100).

[0046] An organic device (100) comprises a substrate (110) and a plurality of elements (115) arranged along the in-plane direction of the substrate (110). The substrate (110) comprises a first surface (111) and a second surface (112) located opposite the first surface (111). The elements (115) are located on the first surface (111). The elements (115) are, for example, pixels. The substrate (110) may include two or more types of elements (115). For example, the substrate (110) may include a first element (115A) and a second element (115B). Although not illustrated, the substrate (110) may include a third element. The first element (115A), the second element (115B), and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0047] The device (115) may have a first electrode (120), an organic layer (130) located on the first electrode (120), and a second electrode (140) located on the organic layer (130).

[0048] The organic device (100) may have an insulating layer (160) located between two adjacent first electrodes (120) when viewed in a planar view. The insulating layer (160) may include, for example, polyimide. The insulating layer (160) may overlap the ends of the first electrodes (120). “When viewed in a planar view” means viewing an object along the normal direction of the surface of a plate-shaped member such as a substrate (110).

[0049] The substrate (110) may be an insulating material. As the material of the substrate (110), for example, a rigid material without flexibility such as silicon, quartz glass, Pyrex (registered trademark) glass, or synthetic quartz plate, or a flexible material with flexibility such as a resin film, an optical resin plate, or thin glass may be used. The substrate (110) may have the same planar shape as a silicon wafer used in semiconductor manufacturing. In this case, the substrate (110) may be processed using a device that performs a semiconductor manufacturing process. For example, a first electrode (120), an insulating layer (160), etc., may be formed on the substrate (110) using a device that performs a semiconductor manufacturing process.

[0050] The element (115) is configured to realize a certain function by applying a voltage between the first electrode (120) and the second electrode (140), or by allowing current to flow between the first electrode (120) and the second electrode (140). For example, if the element (115) is a pixel of an organic EL display device, the element (115) can emit light that forms an image.

[0051] The first electrode (120) includes a conductive material. For example, the first electrode (120) includes a metal, a conductive metal oxide, or other conductive inorganic materials. The first electrode (120) may include a transparent and conductive metal oxide, such as indium tin oxide.

[0052] The organic layer (130) includes an organic material. When the organic layer (130) is energized, the organic layer (130) can perform a certain function. Energy energization means that a voltage is applied to the organic layer (130) or that an electric current flows through the organic layer (130). As the organic layer (130), a light-emitting layer that emits light upon energy energization, a layer whose light transmittance or refractive index changes upon energy energization, etc., may be used. The organic layer (130) may also include an organic semiconductor material.

[0053] As illustrated in FIG. 1, the organic layer (130) may include a first organic layer (130A) and a second organic layer (130B). The first organic layer (130A) is included in the first element (115A). The second organic layer (130B) is included in the second element (115B). Although not illustrated, the organic layer (130) may include a third organic layer included in the third element. The first organic layer (130A), the second organic layer (130B), and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0054] When a voltage is applied between the first electrode (120) and the second electrode (140), the organic layer (130) located between them is driven. When the organic layer (130) is a light-emitting layer, light is emitted from the organic layer (130), and the light is emitted to the outside from the second electrode (140) side or the first electrode (120) side.

[0055] The organic layer (130) may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc.

[0056] The second electrode (140) may include a conductive material such as a metal. As the material of the second electrode (140), for example, platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, etc. and alloys thereof may be used. As shown in FIG. 1, the second electrode (140) may be extended to span two adjacent organic layers (130) when viewed in a planar view.

[0057] Next, a method for forming an organic layer (130) on a substrate (110) by a deposition method will be described. FIG. 2 is a drawing illustrating a deposition apparatus (10). The deposition apparatus (10) performs a deposition process to deposit a deposition material onto an object.

[0058] As illustrated in FIG. 2, the deposition apparatus (10) may be equipped with a deposition source (6), a heater (8), and a frame-equipped mask (15) inside. The deposition apparatus (10) may further be equipped with an exhaust means for creating a vacuum atmosphere inside the deposition apparatus (10). The deposition source (6) is, for example, a crucible. The deposition source (6) contains a deposition material (7), such as an organic material or a metal material. The heater (8) heats the deposition source (6) to evaporate the deposition material (7) under a vacuum atmosphere.

[0059] A frame-equipped mask (15) includes a mask (20) and a frame (60) attached to the mask (20). The frame-equipped mask (15) is also referred to as a mask device (15). The mask (20) includes an incident surface (201), an exit surface (202), and a second opening (41). The exit surface (202) is located on the opposite side of the incident surface (201). The mask device (15) is supported by a mask holder (9). The mask device (15) is positioned such that the incident surface (201) faces the deposition source (6) and the exit surface (202) faces the first surface (111) of the substrate (110). A portion of the deposition material (7) that enters the mask (20) from the exit surface (202) passes through the second opening (41) and exits from the exit surface (202). The deposition material (7) coming out of the output surface (202) is attached to the first surface (111) of the substrate (110). The output surface (202) of the mask (20) may be in contact with the first surface (111) of the substrate (110).

[0060] As illustrated in FIG. 2, the deposition apparatus (10) may be equipped with a magnet (5) positioned on the second surface (112) of the substrate (110). When the mask (20) contains a metal material, the magnet (5) can attract the mask (20) toward the substrate (110) by magnetic force. As a result, the gap between the mask (20) and the substrate (110) can be reduced or eliminated. Therefore, the occurrence of shadows in the deposition process can be suppressed. In the present application, a shadow is a phenomenon in which the thickness of the organic layer (130) formed near the wall of the second opening (41) becomes smaller than the thickness of the organic layer (130) formed at the center of the second opening (41). Shadows occur due to the deposition material (7) adhering to the wall of the mask (20), the deposition material (7) entering the gap between the mask (20) and the substrate (110), etc.

[0061] Next, the mask device (15) will be described in detail. FIG. 3 is a plan view illustrating an example of the mask device (15) as viewed from the incident surface (201). FIG. 4 is a plan view illustrating an example of the mask device (15) as viewed from the exit surface (202). FIG. 5a is a cross-sectional view along the VV line of the mask device (15) of FIG. 3. FIG. 5b is a drawing showing an enlarged view of the portion enclosed by the dashed line at two points of the cross-section of FIG. 5a.

[0062] First, the mask (20) will be described in detail. As shown in FIG. 5a, the mask (20) comprises a first layer (30) and a second layer (40) arranged sequentially from an incident surface (201) toward an exit surface (202). The first layer (30) includes, for example, silicon, a silicon compound, glass, or aluminum oxide (Al2O3). The silicon compound is, for example, silicon carbide (SiC). The second layer (40) includes, for example, a resin material. As shown in FIG. 5a, the mask (20) may further comprise an intermediate layer (50). The intermediate layer (50) is disposed between the first layer (30) and the second layer (40). Each layer will be described below.

[0063] As clearly illustrated in FIG. 5b, the first layer (30) includes a first surface (301), a second surface (302), a first opening (31), and a first wall surface (32). The first surface (301) may constitute an incident surface (201). The second surface (302) is located on the opposite side of the first surface (301).

[0064] The first opening (31) penetrates the first layer (30) from the first surface (301) to the second surface (302). As shown in FIG. 3, the first layer (30) may include a plurality of first openings (31). The plurality of first openings (31) may be arranged in a first direction (D1) and a second direction (D2). The second direction (D2) may be orthogonal to the first direction (D1).

[0065] The first opening (31) may correspond to one screen of the organic EL display device. The mask (20) shown in FIG. 3 can simultaneously form patterns of organic layers corresponding to multiple screens on the substrate (110). As shown in FIG. 3, the first opening (31) may have a rectangular outline when viewed from a planar view.

[0066] The first wall surface (32) is a surface of the first layer (30) facing the first opening (31). In the example illustrated in FIG. 3, the first wall surface (32) is spread along the normal direction of the first surface (301).

[0067] As illustrated in FIG. 3, the area of ​​the first layer (30) where the first opening (31) is not formed may be divided into an outer area (35) and an inner area (36). The inner area (36) is an area located between two adjacent first openings (31) when viewed in a plane. The outer area (35) is an area located between the outer edge (303) of the first layer (30) and the first opening (31) when viewed in a plane. As illustrated in FIG. 3, the inner area (36) may be extended in a first direction (D1) and a second direction (D2).

[0068] When the first layer (30) comprises silicon or a silicon compound, the first layer (30) may be manufactured, for example, by processing a silicon wafer. As shown in FIG. 3, the outer edge (303) of the first layer (30) may include a straight-shaped portion. The straight-shaped portion is also referred to as an orientation flat. Although not shown, a cut may be formed in the outer edge (303). The cut is also referred to as a notch. When the first layer (30) is manufactured by processing a silicon wafer, the orientation flat and the notch represent the crystal orientation of the silicon wafer.

[0069] When viewed in a planar view, the maximum dimension (S1) of the first layer (30) may be, for example, 100 mm or more, 150 mm or more, or 200 mm or more. The dimension (S1) may be, for example, 300 mm or less, 400 mm or less, or 500 mm or less. The range of the dimension (S1) may be determined by a first group consisting of 100 mm, 150 mm, and 200 mm, and / or a second group consisting of 300 mm, 400 mm, and 500 mm. The range of the dimension (S1) may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the dimension (S1) may be determined by a combination of any two of the values ​​included in the first group described above. The range of the dimension (S1) may be determined by any two combinations of values ​​included in the second group described above. The dimension (S1) may, for example, be 100 mm or more and 500 mm or less, 100 mm or more and 400 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 200 mm or less, 100 mm or more and 150 mm or less, 150 mm or more and 500 mm or less, 150 mm or more and 400 mm or less, 150 mm or more and 300 mm or less, 150 mm or more and 200 mm or less, 200 mm or more and 500 mm or less, 200 mm or more and 400 mm or less, 200 mm or more and 300 mm or less, 300 mm or more and 500 mm or less, 300 mm or more and 400 mm or less, 400 mm or more and 500 mm It is acceptable to do the following.

[0070] The dimension (S2) of the first opening (31) in the direction in which the first opening (31) is arranged may, for example, be 3 mm or more, 10 mm or more, or 20 mm or more. The dimension (S2) may, for example, be 30 mm or less, 50 mm or less, or 100 mm or less. The range of the dimension (S2) may be determined by a first group consisting of 3 mm, 10 mm, and 20 mm, and / or a second group consisting of 30 mm, 50 mm, and 100 mm. The range of the dimension (S2) may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the dimension (S2) may be determined by a combination of any two of the values ​​included in the first group described above. The range of the dimension (S2) may be determined by any two combinations of values ​​included in the second group described above. The dimension (S2) may be, for example, 3 mm or more and 100 mm or less, 3 mm or more and 50 mm or less, 3 mm or more and 30 mm or less, 3 mm or more and 20 mm or less, 3 mm or more and 10 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 20 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 20 mm or more and 30 mm or less, 30 mm or more and 100 mm or less, 30 mm or more and 50 mm or less, and 50 mm or more and 100 mm or less.

[0071] The spacing (S3) between two first openings (31) in the direction in which the first openings (31) are arranged may, for example, be 0.1 mm or more, 0.5 mm or more, or 1.0 mm or more. The spacing (S3) may, for example, be 10 mm or less, 15 mm or less, or 20 mm or less. The range of the spacing (S3) may be determined by a first group consisting of 0.1 mm, 0.5 mm, and 1.0 mm, and / or a second group consisting of 10 mm, 15 mm, and 20 mm. The range of the spacing (S3) may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the spacing (S3) may be determined by a combination of any two of the values ​​included in the first group described above. The range of the interval (S3) may be determined by any two combinations of values ​​included in the second group described above. The interval (S3) may be, for example, 0.1 mm or more and 20 mm or less, 0.1 mm or more and 15 mm or less, 0.1 mm or more and 10 mm or less, 0.1 mm or more and 1.0 mm or less, 0.1 mm or more and 0.5 mm or less, 0.5 mm or more and 20 mm or less, 0.5 mm or more and 15 mm or less, 0.5 mm or more and 10 mm or less, 0.5 mm or more and 1.0 mm or less, 1.0 mm or more and 20 mm or less, 1.0 mm or more and 15 mm or less, 1.0 mm or more and 10 mm or less, 10 mm or more and 20 mm or less, 10 mm or more and 15 mm or less, and 15 mm or more and 20 mm or less.

[0072] The thickness of the first layer (30) is defined as the maximum thickness (T1) of the outer region (35). The thickness (T1) may be, for example, 50 μm or more, 100 μm or more, or 200 μm or more. The thickness (T1) may be, for example, 600 μm or less, 800 μm or less, or 1000 μm or less. The range of thickness (T1) may be determined by a first group consisting of 50 μm, 100 μm, and 200 μm, and / or a second group consisting of 600 μm, 800 μm, and 1000 μm. The range of thickness (T1) may be determined by any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of thickness (T1) may be determined by any two combinations of values ​​included in the first group described above. The range of thickness (T1) may also be determined by any two combinations of values ​​included in the second group described above. The thickness (T1) may, for example, be 50㎛ or more and 1000㎛ or less, 50㎛ or more and 800㎛ or less, 50㎛ or more and 600㎛ or less, 50㎛ or more and 200㎛ or less, 50㎛ or more and 100㎛ or less, 100㎛ or more and 1000㎛ or less, 100㎛ or more and 800㎛ or less, 100㎛ or more and 600㎛ or less, 100㎛ or more and 200㎛ or less, 200㎛ or more and 1000㎛ or less, 200㎛ or more and 800㎛ or less, 200㎛ or more and 600㎛ or less, 600㎛ or more and 1000㎛ or less, 600㎛ or more and 800㎛ or less, and 800㎛ or more and 1000㎛. It is acceptable to do the following.

[0073] Next, the second layer (40) will be described. The second layer (40) includes a third surface (401), a fourth surface (402), and a plurality of second openings (41). The third surface (401) is opposite to the second surface (302) of the first layer (30). The fourth surface (402) is located on the opposite side of the third surface (401).

[0074] The second opening (41) penetrates the second layer (40) from the third surface (401) to the fourth surface (402). One second opening (41) corresponds to one organic layer (130). A group of regularly arranged second openings (41) corresponds to one screen of an organic EL display device. As shown in FIGS. 3 and 4, a group of regularly arranged second openings (41) may overlap with one first opening (31) when viewed from a plane. A group of second openings (41) is supported by a first layer (30) formed by processing a single member such as a silicon wafer.

[0075] The second layer (40) may be divided into a main area (43) and an effective area (44). The main area (43) is an area that overlaps with the first layer (30) when viewed in a planar view. The effective area (44) is an area where a group of regularly arranged second openings (41) is distributed. The main area (43) may also be divided into an outer area (45) and an inner area (46). The outer area (45) is an area that overlaps with the outer area (35) of the first layer (30) when viewed in a planar view. The inner area (46) is an area that overlaps with the inner area (36) of the first layer (30) when viewed in a planar view.

[0076] FIG. 5c is a cross-sectional view illustrating an example of an effective area (44). The second layer (40) includes a second wall surface (42) facing the second opening (41). As shown in FIG. 5c, the second wall surface (42) may include a tapered surface (42a) that widens away from the center of the second opening (41) as it faces the third surface (401). By including the tapered surface (42a) of the second wall surface (42), shadows can be suppressed in the vicinity of the second wall surface (42).

[0077] In FIG. 5c, reference numeral S8 indicates the width of the tapered surface (42a) in the direction in which the second opening (41) is arranged. The width (S8) may be, for example, 0.1 μm or more, 0.5 μm or more, or 1.0 μm or more. The width (S8) may be, for example, 10 μm or less, 20 μm or less, or 25 μm or less. The range of the width (S8) may be determined by a first group consisting of 0.1 μm, 0.5 μm, and 1.0 μm, and / or a second group consisting of 10 μm, 20 μm, and 25 μm. The range of the width (S8) may be determined by any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of width (S8) may be determined by any two combinations of values ​​included in the first group described above. The range of width (S8) may be determined by any two combinations of values ​​included in the second group described above. The width (S8) may be, for example, 0.1㎛ or more and 25㎛ or less, 0.1㎛ or more and 20㎛ or less, 0.1㎛ or more and 10㎛ or less, 0.1㎛ or more and 1.0㎛ or less, 0.1㎛ or more and 0.5㎛ or less, 0.5㎛ or more and 25㎛ or less, 0.5㎛ or more and 20㎛ or less, 0.5㎛ or more and 10㎛ or less, 0.5㎛ or more and 1.0㎛ or less, 1.0㎛ or more and 25㎛ or less, 1.0㎛ or more and 20㎛ or less, 1.0㎛ or more and 10㎛ or less, 10㎛ or more and 25㎛ or less, 10㎛ or more and 20㎛ or less, and 20㎛ or more and 25㎛ or less.

[0078] In FIG. 5c, the symbol θ1 represents the angle formed by the second wall surface (42) and the fourth surface (402). The angle (θ1) may be, for example, 50° or greater, 55° or greater, or 60° or greater. The angle (θ1) may be, for example, 80° or less, 85° or less, or less than 90°. The range of the angle (θ1) may be determined by a first group consisting of 50°, 55°, and 60°, and / or a second group consisting of 80°, 85°, and 90°. The range of the angle (θ1) may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the angle (θ1) may be determined by a combination of any two of the values ​​included in the first group described above. The range of the angle (θ1) may be determined by any two combinations of values ​​included in the second group described above. The angle (θ1) may, for example, be 50° or more and less than 90°, 50° or more and less than 85°, 50° or more and less than 80°, 50° or more and less than 60°, 50° or more and less than 55°, 55° or more and less than 90°, 55° or more and less than 85°, 55° or more and less than 80°, 55° or more and less than 60°, 60° or more and less than 90°, 60° or more and less than 85°, 60° or more and less than 80°, 80° or more and less than 90°, 80° or more and less than 85°, and 85° or more and less than 90°.

[0079] The second layer (40) may include a metal material. If the second layer (40) includes a metal material, the mask (20) can be attached to the substrate (110) by using a magnet (5). In this case, the mask (20) can be pulled toward the magnet (5) by magnetic force, thereby improving the adhesion between the mask (20) and the substrate (110). Accordingly, the precision of the organic layers (130A, 130B, 130C) of the organic device (100) can be improved.

[0080] The metal material included in the second layer (40) may be a magnetic metal material. The magnetic metal material may be, for example, nickel, iron, cobalt, and alloys thereof. For example, as the material constituting the second layer (40), an iron alloy containing nickel may be used. The iron alloy may contain cobalt in addition to nickel. For example, as the material of the second layer (40), an iron alloy may be used in which the total content of nickel and cobalt is 30 mass% or more and 54 mass% or less, and the content of cobalt is 0 mass% or more and 6 mass% or less. For the iron alloy containing nickel, an Invar material containing 34 mass% or more and 38 mass% or less of nickel, a low thermal expansion Fe-Ni-based plating alloy containing 38 mass% or more and 54 mass% or less of nickel, etc. may be used. For iron alloys containing nickel and cobalt, super Invar materials containing cobalt in addition to nickel in an amount of 30 mass% or more and 34 mass% or less may be used. By using such iron alloys, the coefficient of thermal expansion of the second layer (40) can be lowered. For example, when a glass substrate is used as the substrate (110), the coefficient of thermal expansion of the second layer (40) can be adjusted to the same value or a value close to that of the glass substrate. Thus, a decrease in precision can be suppressed.

[0081] As a material constituting the second layer (40), a nickel alloy containing cobalt may be used. When using a nickel alloy containing cobalt, a nickel alloy having a cobalt content of 8 mass% or more and 10 mass% or less may be used as the material for the second layer (40). When such a nickel or nickel alloy is used, the plating solution used in the second layer formation process described later can suppress component decomposition, thereby improving the stability of the plating solution.

[0082] The second layer (40) may be composed of a single metal layer or may include multiple metal layers. When the mask (20) includes an intermediate layer (50), the second layer (40) is composed of a material that is resistant to an etchant that etches the intermediate layer (50).

[0083] The thickness of the second layer (40) is smaller than the thickness (T1) of the first layer (30). The thickness of the second layer (40) may be, for example, 0.5 μm or more, 1.0 μm or more, or 2.0 μm or more. The thickness of the second layer (40) may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of the thickness of the second layer (40) may be determined by a first group consisting of 0.5 μm, 1.0 μm, and 2.0 μm, and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of the thickness of the second layer (40) may be determined by any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of thickness of the second layer (40) may be determined by any two combinations of values ​​included in the first group described above. The range of thickness of the second layer (40) may be determined by any two combinations of values ​​included in the second group described above. The thickness of the second layer (40) may be, for example, 0.5㎛ or more and 25㎛ or less, 0.5㎛ or more and 10㎛ or less, 0.5㎛ or more and 5㎛ or less, 0.5㎛ or more and 2.0㎛ or less, 0.5㎛ or more and 1.0㎛ or less, 1.0㎛ or more and 25㎛ or less, 1.0㎛ or more and 10㎛ or less, 1.0㎛ or more and 5㎛ or less, 1.0㎛ or more and 2.0㎛ or less, 2.0㎛ or more and 25㎛ or less, 2.0㎛ or more and 10㎛ or less, 2.0㎛ or more and 5㎛ or less, 5㎛ or more and 25㎛ or less, 5㎛ or more and 10㎛ or less, and 10㎛ or more and 25㎛ or less. By having a thickness of 25㎛ or less of the second layer (40), the occurrence of shadows can be suppressed. By having a thickness of 0.5㎛ or more of the second layer (40), defects such as pinholes or deformations can be suppressed from occurring in the second layer (40).

[0084] When viewed from a planar perspective, the dimension (S4) of the second opening (41) may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The dimension (S4) may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of the dimension (S4) may be determined by a first group consisting of 1 μm, 2 μm, and 3 μm, and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of the dimension (S4) may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the dimension (S4) may be determined by a combination of any two of the values ​​included in the first group described above. The range of the dimension (S4) may be determined by a combination of any two of the values ​​included in the second group described above. The dimension (S4) may be, for example, 1 µm or more and 25 µm or less, 1 µm or more and 10 µm or less, 1 µm or more and 5 µm or less, 1 µm or more and 3 µm or less, 1 µm or more and 2 µm or less, 2 µm or more and 25 µm or less, 2 µm or more and 10 µm or less, 2 µm or more and 3 µm or less, 3 µm or more and 25 µm or less, 3 µm or more and 10 µm or less, 3 µm or more and 5 µm or less, 5 µm or more and 25 µm or less, 5 µm or more and 10 µm or less, and 10 µm or more and 25 µm or less.

[0085] The spacing (S5) between two second openings (41) in the direction in which the second openings (41) are arranged may, for example, be 1 μm or more, 2 μm or more, or 3 μm or more. The spacing (S5) may, for example, be 5 μm or less, 10 μm or less, or 25 μm or less. The range of the spacing (S5) may be determined by a first group consisting of 1 μm, 2 μm, and 3 μm, and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of the spacing (S5) may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the spacing (S5) may be determined by a combination of any two of the values ​​included in the first group described above. The range of the interval (S5) may be determined by any two combinations of values ​​included in the second group described above. The interval (S5) may, for example, be 1 μm or more and 25 μm or less, 1 μm or more and 10 μm or less, 1 μm or more and 5 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, 2 μm or more and 25 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 25 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 10 μm or less, and 10 μm or more and 25 μm or less.

[0086] When viewed from a planar perspective, the gap (S6) between the first wall surface (32) and the second opening (41) may be larger than the gap (S5). As a result, shadows can be suppressed from the second opening (41) that is close to the first wall surface (32).

[0087] Next, the intermediate layer (50) will be described. The intermediate layer (50) includes a layer that performs a function for the first layer (30) or the second layer (40). For example, the intermediate layer (50) may function as a stopper layer that stops etching in a process of processing the first layer (30) by etching. If the intermediate layer (50) is a stopper layer, the intermediate layer (50) may include aluminum, an aluminum alloy, titanium, or a titanium alloy. If the intermediate layer (50) is a stopper layer, the intermediate layer (50) may include an inorganic compound such as silicon oxide. Alternatively, the intermediate layer (50) may perform the function of bonding the first layer (30) and the second layer (40). For example, the intermediate layer (50) may be a bonding layer containing an adhesive.

[0088] The thickness of the intermediate layer (50) is not particularly limited as long as it can perform the function described above. For example, the thickness of the intermediate layer (50) may be smaller than the thickness of the second layer (40) or greater than the thickness of the second layer (40). The thickness of the intermediate layer (50) may be, for example, 5 nm or more, 50 nm or more, or 75 nm or more. The thickness of the intermediate layer (50) may be, for example, 1 μm or less, 10 μm or less, or 100 μm or less. The range of the thickness of the intermediate layer (50) may be determined by a first group consisting of 5 nm, 50 nm, and 75 nm, and / or a second group consisting of 1 μm, 10 μm, and 100 μm. The range of thickness of the intermediate layer (50) may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of thickness of the intermediate layer (50) may be determined by a combination of any two of the values ​​included in the first group described above. The range of thickness of the intermediate layer (50) may be determined by a combination of any two of the values ​​included in the second group described above. The thickness of the intermediate layer (50) may be, for example, 5 nm or more and 100 µm or less, 5 nm or more and 10 µm or less, 5 nm or more and 1 µm or less, 5 nm or more and 75 nm or less, 5 nm or more and 50 nm or less, 50 nm or more and 100 µm or less, 50 nm or more and 1 µm or less, 50 nm or more and 1 µm or less, 50 nm or more and 75 nm or less, 75 nm or more and 100 µm or less, 75 nm or more and 1 µm or less, 75 nm or more and 1 µm or less, 1 µm or more and 100 µm or less, 1 µm or more and 10 µm or less.

[0089] Preferably, the intermediate layer (50) is positioned so as not to overlap with the second opening (41) when viewed in a plane. As a result, the occurrence of shadows caused by the intermediate layer (50) can be suppressed.

[0090] In the above-described mask (20), the area including the first opening (31) formed therein, the area including the second opening (41) formed therein (effective area (44)), and the inner area (36, 46) is hereinafter also referred to as the inner area (26) of the mask (20). Additionally, the area including the outer area (35, 45) is also referred to as the outer area (25) of the mask (20). The outer area (25) surrounds the inner area (26). The outer area (25) includes a connection area (27) to which the frame (60) is connected. The connection area (27) is the outer edge area of ​​the outer area (25).

[0091] Next, the frame (60) will be described in detail. The frame (60) is attached to the mask (20) for the purpose of being grasped when handling the mask (20), for example, when moving the mask (20). As shown in FIG. 3 and the like, a second opening (41) and thus a first opening (31) are formed in the mask (20) up to the outer edge. When handling the mask (20), for example, when moving the mask (20), it is desired to grip the outer region (35) of the first layer (30) in order to prevent deformation of the second opening (41) of the second layer (40) or to prevent contamination of the second layer (40). However, since the first opening (31) is formed up to the vicinity of the outer edge (303) of the first layer (30), the width of the outer region (35) is insufficient to grip the outer region (35). Furthermore, since the first opening (31) is formed up to the vicinity of the outer edge (303) of the first layer (30), the outer region (35) is narrow. The narrow outer region (35) is prone to damage. The outer region (35) is particularly prone to damage when the first layer (30) contains silicon or a silicon compound. Since a frame (60) is attached to the outer region (25) of the mask (20), the frame (60) can be grasped when handling the mask (20), thereby reducing the risk of damage to the first layer (30). As a result, handling the mask (20) becomes easier.

[0092] As understood from FIGS. 3 to 5b, the frame (60) includes a fifth surface (601) and a sixth surface (602). The fifth surface (601) faces the same side as the fourth surface (402). The sixth surface (602) is located on the opposite side of the fifth surface (601). In the illustrated example, the fifth surface (601) and the first surface (301) face each other.

[0093] As illustrated in FIGS. 5A and 5B, a mask (20) is fixed to a frame (60) by a screw (70). The frame (60) faces the first surface (301) of the outer region (35) of the first layer (30). In the illustrated example, a cushioning material (75) is placed between the first surface (301) of the outer region (35) and the fifth surface (601) of the frame (60). The frame (60) faces the first layer (30) through the cushioning material (75). When viewed in a planar view, the frame (60) does not overlap with the first opening (31). Also, when viewed in a planar view, at least a portion of the frame (60) extends to the outside of the outer edge (303) of the first layer (30). Accordingly, the area for gripping when handling the mask (20) is expanded by the frame (60).

[0094] The frame (60) includes a glass material or a metal material. The glass material is quartz glass, borosilicate glass, alkali-free glass, soda glass, etc. Additionally, the metal material is Invar or stainless steel such as SUS430 or SUS304. By including these materials, the rigidity of the frame (60) can be made higher than that of the first layer (30). The material of the frame (60) may be determined to ensure that the frame (60) has the necessary rigidity by taking into account the gripping force of the worker or robot hand handling the mask device (15).

[0095] Additionally, it is preferable that the linear thermal expansion coefficient of the frame (60) be of the same degree as the linear thermal expansion coefficient of the first layer (30). As a result, when the mask device (15) is heated, the elongation rate of the frame (60) and the first layer (30) can be made to the same degree. As a result, the risk of the first layer (30) being damaged is suppressed. Specifically, the absolute value of the difference between the linear thermal expansion coefficient of the frame (60) and the linear thermal expansion coefficient of the first layer (30) is 15 ppm / ℃ or less, may be 10 ppm / ℃ or less, and may be 5.0 ppm / ℃ or less.

[0096] In the illustrated example, the frame (60) is formed in an annular shape. The frame (60) has an area that extends in a perimeter shape to the outer edge (303) of the first layer (30) when viewed in a planar view. Therefore, the risk of damage to the outer area (35) of the first layer (30) when handling the mask (20) is effectively suppressed. More specifically, a third opening (61) is formed in the center of the frame (60) that penetrates from the fifth surface (601) to the sixth surface (602). In the illustrated example, the third opening (61) is similar in shape to the outer edge (303) of the first layer (30). The maximum dimension (S9) of the third opening (61) is smaller than the maximum dimension (S1) of the outer edge (303) of the first layer (30). When viewed in a plane, the third opening (61) overlaps the inner region (26) of the mask (20).

[0097] The shape and dimensions of the outer edge (603) of the frame (60) are not particularly limited. The shape and dimensions (S10) of the outer edge (603) of the frame (60) may be determined based on the dimensions or shape of the hands of a worker or robot hand handling the mask device (15), or the dimensions or shape of the mask holder (9) of the deposition device (10). The outer edge (603) of the frame (60) may be square in shape or other polygonal shapes. The dimensions (S10) of the outer edge (603) of the frame (60) may be, for example, 100 mm or more, 150 mm or more, or 200 mm or more. The dimensions (S10) may be, for example, 300 mm or less, 400 mm or less, or 500 mm or less. The range of the dimension (S10) may be determined by a first group consisting of 100 mm, 150 mm, and 200 mm, and / or a second group consisting of 300 mm, 400 mm, and 500 mm. The range of the dimension (S10) may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the dimension (S10) may be determined by a combination of any two of the values ​​included in the first group described above. The range of the dimension (S10) may be determined by a combination of any two of the values ​​included in the second group described above. The dimension (S10) may, for example, be 100 mm or more and 500 mm or less, 100 mm or more and 400 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 200 mm or less, 100 mm or more and 150 mm or less, 150 mm or more and 500 mm or less, 150 mm or more and 400 mm or less, 150 mm or more and 300 mm or less, 150 mm or more and 200 mm or less, 200 mm or more and 500 mm or less, 200 mm or more and 400 mm or less, 200 mm or more and 300 mm or less, 300 mm or more and 500 mm or less, 300 mm or more and 400 mm or less, 400 mm or more and 500 mm It is acceptable to do the following.

[0098] The distance (S11) between the outer edge (603) of the frame (60) and the outer edge (303) of the first layer (30) may also be determined based on the dimensions or shape of the hand of a worker or robot hand handling the mask device (15), or the dimensions or shape of the mask holder (9) of the deposition device (10). The distance (S11) may, for example, be 5 mm or more, 10 mm or more, or 15 mm or more. The distance (S11) may, for example, be 30 mm or less, 60 mm or less, or 100 mm or less. The range of the distance (S11) may be determined by a first group consisting of 5 mm, 10 mm, and 15 mm, and / or a second group consisting of 30 mm, 60 mm, and 100 mm. The range of distance (S11) may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of distance (S11) may be determined by a combination of any two of the values ​​included in the first group described above. The range of distance (S11) may be determined by a combination of any two of the values ​​included in the second group described above. The distance (S11) may be, for example, 5 mm or more and 100 mm or less, 5 mm or more and 60 mm or less, 5 mm or more and 30 mm or less, 5 mm or more and 15 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 60 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 15 mm or less, 15 mm or more and 100 mm or less, 15 mm or more and 60 mm or less, 15 mm or more and 30 mm or less, 30 mm or more and 100 mm or less, 30 mm or more and 60 mm or less, and 60 mm or more and 100 mm or less.

[0099] As illustrated in FIG. 5b, the frame (60) includes a connection area (67) to which the mask (20) is connected around the third opening (61). The connection area (67) overlaps with the connection area (27) of the mask (20) when viewed in a plane. The width (S12) of the connection area (27, 67) may be, for example, 1 mm or more, 5 mm or more, or 10 mm or more. The width (S12) may be, for example, 20 mm or less, 25 mm or less, or 30 mm or less. The range of the width (S12) may be determined by a first group consisting of 1 mm, 5 mm, and 10 mm, and / or a second group consisting of 20 mm, 25 mm, and 30 mm. The range of width (S12) may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of width (S12) may be determined by a combination of any two of the values ​​included in the first group described above. The range of width (S12) may be determined by a combination of any two of the values ​​included in the second group described above. The width (S12) may be, for example, 1 mm or more and 30 mm or less, 1 mm or more and 25 mm or less, 1 mm or more and 20 mm or less, 1 mm or more and 10 mm or less, 1 mm or more and 5 mm or less, 5 mm or more and 30 mm or less, 5 mm or more and 25 mm or less, 5 mm or more and 20 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 25 mm or less, 10 mm or more and 20 mm or less, 20 mm or more and 30 mm or less, 20 mm or more and 25 mm or less, and 25 mm or more and 30 mm or less.

[0100] The thickness (T2) of the frame (60) is not specifically limited. The thickness (T2) may also be determined based on the dimensions or shape of the hand of a worker or robot hand handling the mask device (15), or the dimensions or shape of the mask holder (9) of the deposition device (10). The thickness (T2) may, for example, be 500 μm or more, 2 mm or more, or 5 mm or more. The thickness (T2) may, for example, be 10 mm or less, 20 mm or less, or 30 mm or less. The range of the thickness (T2) may be determined by a first group consisting of 500 μm, 2 mm, and 5 mm, and / or a second group consisting of 10 mm, 20 mm, and 30 mm. The range of the thickness (T2) may be determined by any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of thickness (T2) may be determined by any two combinations of values ​​included in the first group described above. The range of thickness (T2) may also be determined by any two combinations of values ​​included in the second group described above. The thickness (T2) may be, for example, 500 μm or more and 30 mm or less, 500 μm or more and 20 mm or less, 500 μm or more and 10 mm or less, 500 μm or more and 5 mm or less, 500 μm or more and 2 mm or less, 2 mm or more and 30 mm or less, 2 mm or more and 20 mm or less, 2 mm or more and 10 mm or less, 2 mm or more and 5 mm or less, 5 mm or more and 30 mm or less, 5 mm or more and 20 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 20 mm or less, and 20 mm or more and 30 mm or less.

[0101] By determining the shape and dimensions of the outer edge (603) of the frame (60) and the thickness (T2) of the frame (60) based on the dimensions and shape of the robot hand handling the mask device (15) and the dimensions and shape of the mask holder (9) of the deposition device (10), the shape and dimensions of the mask device (15) can be made suitable for the existing robot hand or the existing deposition device (10). In other words, there is no need to make the shape and dimensions of the mask (20) suitable for the existing robot hand or the existing deposition device (10), thereby improving the design freedom of the mask (20).

[0102] In the illustrated example, the mask (20) protrudes from the fifth surface (601) of the frame (60). Additionally, as described below, the screw (70) does not protrude from the exit surface (202) of the mask (20). Therefore, when forming a deposition layer through the mask (20) on the substrate (110) or a component on the substrate (110), the exit surface (202) of the mask (20) can be brought into contact with the substrate (110) or a component on the substrate (110).

[0103] Next, the screw (70) is described in detail. The screw (70) secures the mask (20) to the frame (60). By using the screw (70) to secure the mask (20) to the frame (60), the mask (20) can be easily connected to the frame (60). Additionally, it is easy to connect the mask (20) to the frame (60) in a detachable manner. When the mask (20) is detachably connected to the frame (60), after using the mask device (15) in the deposition process, the mask (20) can be separated from the frame (60), and the frame (60) can be used to manufacture a new mask device (15). Furthermore, the mask device (15) used in the deposition process is cleaned using an ultrasonic cleaner or the like and is used again in the deposition process. If cleaning is performed repeatedly, the mask (20) may deform or break, causing misalignment or deformation of the second opening (41). When a deposition process is performed using such a mask (20), the precision of the position, shape, etc., of the deposited layer, such as the organic layer (130) and the second electrode (140), formed on the substrate (110) is reduced. Therefore, a mask device (15) that has been used several times needs to have its mask (20) replaced.

[0104] As illustrated in FIG. 5b, the screw (70) has a head portion (71) and a leg portion (72). The mask (20) and the frame (60) are stacked in this order from the head portion (71) of the screw (70) toward the leg portion (72). The screw (70) is inserted through screw holes (20H, 60H) formed in the mask (20) and the frame (60). The screw (70) and the screw holes (20H, 60H) extend in the stacking direction of the mask (20) and the frame (60). The screw holes (20H, 60H) overlap in the stacking direction of the mask (20) and the frame (60).

[0105] A screw (70) is positioned within the connection area (27) of the mask (20) and the connection area (67) of the frame (60). Corresponding to the positioning of the screw (70), a screw hole (20H) is formed in the connection area (27) of the mask (20). The screw hole (20H) penetrates the mask (20) from the exit surface (202) to the incident surface (201). Additionally, a screw hole (60H) is formed in the connection area (67) of the frame (60). In the illustrated example, the screw hole (60H) is formed as a hole with an open bottom on the fifth surface (601) of the frame (60). However, the screw hole (60H) may penetrate the frame (60) from the fifth surface (601) to the sixth surface (602).

[0106] The number of screws (70) that fix the mask (20) to the frame (60) is not particularly limited. The number of screws (70) can be 1 or more, 2 or more, 4 or more, or 8 or more. The more screws (70) there are, the flatness of the mask (20) in the mask device (15) is improved. In addition, in the example shown in FIG. 4, the mask (20) is fixed to the frame (60) by one or more pairs of screws (70a, 70a; 70b, 70b; 70c, 70c; 70d, 70d) which are arranged with a plurality of second openings (41) between them when viewed from a plane. In this case as well, the flatness of the mask (20) in the mask device (15) is improved. When the flatness of the mask (20) in the mask device (15) is improved, the precision of the position, shape, etc. of the deposited layer, such as the organic layer (130) and the second electrode (140) on the substrate (110), is improved.

[0107] In the example illustrated in FIG. 6, the normal surface (71a) of the head portion (71) of the screw (70) is a surface at the same height as the exit surface (202) of the mask (20). Accordingly, the normal surface (71a) of the head portion (71) of the screw (70) is a surface at the same height as the fourth surface (402) of the second layer (40). In this case, when forming a deposition layer through the mask (20) on the substrate (110) or on a component on the substrate (110), the exit surface (202) of the mask (20) can be brought into contact with the substrate (110) or on the component on the substrate (110). Of course, as illustrated in FIG. 7, the normal surface (71a) of the head portion (71) of the screw (70) may be located between the fourth surface (402) of the second layer (40) and the first surface (301) of the first layer (30). In this case as well, the exit surface (202) of the mask (20) can be brought into contact with the substrate (110) or a component on the substrate (110). "Surfaces of the same height" means that two surfaces are located on the same horizontal plane.

[0108] The screw (70) may include high-speed steel, quenched steel, stainless steel, titanium alloy, aluminum alloy, nickel alloy, molybdenum alloy, tungsten alloy, ceramics such as alumina or zirconia, hard plastic, graphite, carbon fiber, and glass. The nickel alloy may be Invar. The stainless steel may be SUS430, SUS304, etc. The glass may be quartz glass, borosilicate glass, alkali-free glass, soda glass, etc. The screw (70) may be made of the same material as the frame (60). For example, if the frame (60) is made of glass, the screw (70) may also be made of glass. For example, if the frame (60) is made of metal, the screw (70) may also be made of metal. If the screw (70) is made of the same material as the frame (60), the connection between the screw (70) and the frame (60) is improved, so that the mask (20) can be securely fixed to the frame (60).

[0109] The ratio (L72 / R72) of the length (L72) of the portion of the leg (72) of the screw (70) that extends within the frame (60) and the diameter (R72) of the leg (72) may be, for example, 1.5 or more, or 2 or more.

[0110] Next, the cushioning material (75) is described. The cushioning material (75) has cushioning properties. By placing the cushioning material (75) between the mask (20) and the frame (60), the stress applied to the mask (20) from the frame (60) can be absorbed by the cushioning material (75). As a result, the risk of the mask (20) being damaged can be reduced. In addition, in the connection area (27, 67) of the mask (20) and the frame (60), if there are irregularities on the incident surface (201) and / or the fifth surface (601), the cushioning material (75) deforms to fill the irregularities. Therefore, even if there are irregularities on the connection area (27, 67) of the mask (20) and the frame (60), the mask (20) can be connected to the frame (60) so that the exit surface (202) of the mask (20) becomes flat. The cushioning material (75) may include a resin-based or silicone-based elastic material. Additionally, the cushioning material (75) may include a porous ceramic.

[0111] As illustrated in FIG. 4, the mask device (15) may include an alignment mark (16). The alignment mark (16) is formed, for example, on the exit surface (202) of the mask (20). The alignment mark (16) is used to adjust the relative position of the mask device (15) with respect to the substrate (110) (thus, to adjust the relative position of the mask (20) with respect to the substrate (110). If the substrate (110) has the property of transmitting visible light, the alignment mark (16) can be seen through the substrate (110). The alignment mark (16) may be formed on the second layer (40) or on a layer other than the second layer (40). The alignment mark (16) may be located in the outer region (25) of the mask (20) or in the inner region (26).

[0112] As shown in FIG. 4, the alignment mark (16) may have a circular outline when viewed in a plane. Although not shown, the alignment mark (16) may have an outline other than a circle, such as a rectangle or a cross shape.

[0113] The thickness of each layer, the dimensions of each component, the spacing, etc., can be measured by observing an image of the cross-section of the mask (20) using a scanning electron microscope.

[0114] (Method for manufacturing a mask device)

[0115] Next, a method for manufacturing a mask device according to the present embodiment will be described with reference to FIGS. 8 to 21. First, a method for manufacturing a mask (20) will be described. First, a first layer (30) will be prepared. A silicon wafer may be used as the first layer (30). The first surface (301) and the second surface (302) of the first layer (30) may be polished to a mirror-like surface. The arithmetic mean roughness (Ra) of the first surface (301) and the second surface (302) may be 1.5 nm or less, or 1.0 nm or less. The surface orientation of the first surface (301) and the second surface (302) may be (100), (110), etc.

[0116] Next, as illustrated in FIG. 8, a resist forming process is performed to partially form a resist layer (37A) on the second surface (302) of the first layer (30). A resist opening (371A) is formed in the resist layer (37A). The resist opening (371A) is formed opposite to a screw hole (30H). The screw hole (30H) is a portion of the screw hole (20H) that extends into the first layer (30).

[0117] The resist layer (37A) may be a photoresist. In this case, first, a resist layer (37A) is formed on the second surface (302) by coating a liquid resist material on the second surface (302). After coating, a process of heating the resist layer (37A) may be performed. Subsequently, a photolithography process of exposing and developing the resist layer (37A) is performed. As a result, a resist opening (371A) can be formed in the resist layer (37A).

[0118] Although not shown, the resist layer (37A) may be a silicon oxide film partially formed on the second surface (302). The silicon oxide film is formed, for example, by partially performing thermal oxidation treatment on the second surface (302).

[0119] Next, as illustrated in FIG. 9, a screw hole forming process is performed to form a screw hole (30H) in the first layer (30) by etching the first layer (30) from the second surface (302) side. The etching in the screw hole forming process may be dry etching using an etching gas.

[0120] The screw hole (30H) includes a first portion (30Ha) that accommodates the head portion (71) of the screw (70) and a second portion (30Hb) into which the leg portion (72) of the screw (70) is inserted and penetrated. The diameter of the second portion (30Hb) is approximately uniform in the thickness direction of the first layer (30), while the diameter of the first portion (30Ha) expands in the direction from the first surface (301) toward the second surface (302). The method of forming such a screw hole (30H) is not particularly limited, but, for example, the following method may be employed. First, as shown in FIG. 19, the first layer (30) is etched by isotropic etching. As a result, the first portion (30Ha) is formed in the first layer (30). By forming the first portion (30Ha) by isotropic etching, the diameter of the first portion (30Ha) is expanded in the direction from the first surface (301) toward the second surface (302). Then, as shown in FIG. 20, the bottom of the first portion (30Ha) is etched by anisotropic etching to form the second portion (30Hb). By forming the second portion (30Hb) by anisotropic etching, the diameter of the second portion (30Hb) can be made approximately uniform in the thickness direction of the first layer (30). Through these processes, a screw hole (30H) comprising the first portion (30Ha) and the second portion (30Hb) can be formed.

[0121] The etching process for forming the second part (30Hb) may be deep reactive ion etching. In this case, a plasmad etching gas is used. The etching gas is, for example, SF6 gas.

[0122] After forming screw holes (30H) in the first layer (30), the resist layer (37A) is removed. For example, a resist treatment liquid is supplied to the second surface (302).

[0123] If the resist layer (37A) is a photoresist, the resist treatment solution contains, for example, N-methyl-2-pyrrolidone. The resist layer (37A) may be removed by irradiating the resist layer (37A) with oxygen plasma.

[0124] When the resist layer (37A) is a silicon oxide film, the resist treatment solution contains, for example, hydrofluoric acid. The resist layer (37A) may be removed by dry etching using CF4 gas, etc.

[0125] Next, as illustrated in FIG. 10, an intermediate layer (50) is formed on the second surface (302) of the first layer (30). The intermediate layer (50) may be formed over the entire second surface (302). The intermediate layer (50) may also be formed within the screw hole (30H). The intermediate layer (50) may be formed, for example, by a vacuum film deposition method such as sputtering.

[0126] Next, as shown in FIG. 11, a resist layer (37B) is partially formed on the intermediate layer (50). A resist opening (371B) is formed in the resist layer (37B). The resist opening (371B) is formed opposite the screw hole (30H).

[0127] The resist layer (37B) may be a photoresist. In this case, the resist layer (37B) is first formed on the intermediate layer (50) by coating a liquid resist material on the intermediate layer (50). After coating, a process of heating the resist layer (37B) may be performed. Subsequently, a photolithography process of exposing and developing the resist layer (37B) is performed. As a result, a resist opening (371B) can be formed in the resist layer (37B).

[0128] Next, as illustrated in FIG. 12, the intermediate layer (50) is etched from the resist layer (37B) side. As a result, a screw hole (50H) is formed in the intermediate layer (50), and the intermediate layer (50) within the screw hole (30H) is removed. The screw hole (50H) is a portion of the screw hole (20H) that extends into the intermediate layer (50). The etching for removing the intermediate layer (50) may be dry etching using an etching gas.

[0129] Next, the resist layer (37B) is removed. For example, the resist treatment solution is supplied to the intermediate layer (50).

[0130] If the resist layer (37B) is a photoresist, the resist treatment solution contains, for example, N-methyl-2-pyrrolidone. The resist layer (37B) may be removed by irradiating the resist layer (37B) with oxygen plasma.

[0131] Next, as illustrated in FIG. 13, a resist pattern forming process is performed to form a plurality of resist convex portions (371C, 372C) on an intermediate layer (50). The resist convex portions (371C) are formed in a pattern corresponding to the second opening (41). The resist convex portions (371C) are formed at a position that overlaps with the second opening (41) on the intermediate layer (50) when viewed from a planar perspective. The resist convex portions (372C) are formed at a position that overlaps with the screw holes (50H, 30H). The resist convex portions (372C) fill the screw holes (50H, 30H) and protrude from the screw holes (50H, 30H).

[0132] The resist convex portion (371C, 372C) may be a photoresist. In this case, the photoresist may be a positive type resist. Positive type resists include, for example, iP5700, PMER-P-LA900PM, PMER-P7100 manufactured by Tokyo Oka Kogyo Co., Ltd., and NPR9700 manufactured by Nagase Chemtech.

[0133] The height (T3) of the resist convex portions (371C, 372C) is defined as the distance between the top portion of the resist convex portions (371C, 372C) and the surface of the intermediate layer (50). The height (T3) is greater than the thickness of the second layer (40). The height (T3) may be, for example, 2.0 μm or more, 3.0 μm or more, or 4.0 μm or more. The thickness of the second layer (40) may be, for example, 7 μm or less, 12 μm or less, or 27 μm or less.

[0134] The side wall surface of the resist convex portion (371C) has a tapered surface (371Ca) that narrows inward as it moves away from the intermediate layer (50). Specifically, the shape of the resist convex portion (371C) may be truncated pyramidal or truncated cone-shaped overall. The angle (θ2) between the tapered surface (371Ca) and the surface of the intermediate layer (50) may be the same as the angle (θ1) between the tapered surface (42a) of the second opening (41) and the third surface (401).

[0135] The resist pattern formation process includes, for example, a resist layer formation process, an exposure process, and a development process.

[0136] The resist layer forming process is a process of forming a resist layer on an intermediate layer (50). The resist layer forming process includes, for example, a process of applying a liquid resist to the intermediate layer (50). The resist layer forming process may also include a process of heating the liquid resist on the intermediate layer (50). The resist layer is formed by drying the liquid resist.

[0137] The exposure process irradiates light onto the resist layer so that, in the subsequent development process, the resist layer remains in the portion corresponding to the second aperture (41) and the screw hole (20H) of the resist layer, and the resist layer in the other portion of the intermediate layer (50) is removed. Specifically, since the resist layer is a positive type resist, light is irradiated onto the resist layer in the other portion of the intermediate layer (50). The light is, for example, line i. Line i is a spectral line of mercury having a wavelength of 365 nm.

[0138] After the photolithography process, by developing the resist layer, a plurality of resist convex portions (371C, 372C) are obtained on the intermediate layer (50). The developer includes, for example, TMAH (tetramethylammonium hydroxide).

[0139] Next, a second layer formation process is performed. Specifically, as shown in FIG. 14, a plating treatment is performed on an intermediate layer (50) on which resist convex portions (371C, 372C) are formed. As a result, a second layer (40) is formed. In the second layer (40), a second opening (41) and a screw hole (40H) are formed corresponding to the resist convex portions (371C, 372C). The screw hole (40H) is a portion of the screw hole (20H) that extends into the second layer (40).

[0140] The plating process may be an electrolytic plating process. Specifically, a plating power source is connected to an intermediate layer (50), and a laminate comprising a first layer (30), an intermediate layer (50), and resist convex portions (371C, 372C) is immersed in a plating bath containing a plating solution. As a result, metal is deposited in the gaps between a plurality of resist convex portions (371C, 372C) on the intermediate layer (50), thereby forming a second layer (40). For example, as the plating solution, a mixed solution containing a nickel compound and a solution containing an iron compound may be used. For example, a mixed solution containing a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate may be used.

[0141] Next, as illustrated in FIG. 15, the resist convex portions (371C, 372C) are removed. At this time, not only the resist convex portion (371C) within the second opening (41) and the resist convex portion (372C) within the screw hole (40H), but also the resist convex portion (372C) within the screw hole (50H, 30H) are removed. For example, the resist convex portions (371C, 372C) may be removed by exposing and developing the resist convex portions (371C, 372C). The developer may include, for example, TMAH (tetramethylammonium hydroxide). Alternatively, the resist convex portions (371C, 372C) may be removed by contacting a resist treatment solution with the resist convex portions (371C, 372C). The resist treatment solution contains, for example, N-methyl-2-pyrrolidone.

[0142] Next, as shown in FIG. 16, a resist layer (38) is partially formed on the first surface (301) of the first layer (30). In the resist layer (38), a resist opening (381) is formed opposite to the first opening (31).

[0143] The resist layer (38) may be a photoresist. In this case, a resist layer (38) is formed on the first surface (301) by first coating a liquid resist material on the first surface (301). After coating, a process of heating the resist layer (38) may be performed. Subsequently, a photolithography process of exposing and developing the resist layer (38) is performed. As a result, a resist opening (381) can be formed in the resist layer (38).

[0144] Although not shown, the resist layer (38) may be a silicon oxide film partially formed on the first surface (301). The silicon oxide film is formed, for example, by partially performing thermal oxidation treatment on the first surface (301). The silicon oxide film may be formed on the first layer (30) before the intermediate layer (50) and the second layer (40) are laminated on the first layer (30).

[0145] Next, as illustrated in FIG. 17, a first layer processing process is performed to form a first opening (31) in the first layer (30) by etching the first layer (30) from the first surface (301) side. The etching in the first layer processing process may be dry etching using an etching gas. The etching gas is an example of the etchant described above. Since the intermediate layer (50) has resistance to the etchant, as illustrated in FIG. 17, the etching can be suppressed from proceeding to the second layer (40). The etching process for forming the first opening (31) may be deep reactive ion etching.

[0146] After the hole reaches the intermediate layer (50), a process of removing the resist layer (38) may be performed. For example, a resist treatment liquid is supplied to the first surface (301).

[0147] If the resist layer (38) is a photoresist, the resist treatment solution contains, for example, N-methyl-2-pyrrolidone. The resist layer (38) may be removed by irradiating the resist layer (38) with oxygen plasma.

[0148] When the resist layer (38) is a silicon oxide film, the resist treatment solution contains, for example, hydrofluoric acid. The resist layer (38) may be removed by dry etching using CF4 gas, etc.

[0149] After the first layer processing process, a process to remove the intermediate layer (50) may be performed. For example, an etchant for the intermediate layer (50) is supplied to the first opening (31). As a result, as shown in FIG. 18, the intermediate layer (50) that overlaps the first opening (31) when viewed from a planar view can be removed. The etching of the intermediate layer (50) may be dry etching using a fluorine-based gas, etc., or wet etching using an acidic etching solution.

[0150] The order of the process of removing the resist layer (38) and the process of removing the intermediate layer (50) is not particularly limited. These processes may be performed simultaneously.

[0151] Next, a method for manufacturing the frame (60) is described. First, a plate-shaped member comprising the glass or metal material described above is prepared, and the plate-shaped member is machined to produce a frame (60) having a third opening (61) and a screw hole (60H). As a cutting tool for machining the plate-shaped member, a drill, a cutting tool, a milling cutter, an end mill, etc., may be used.

[0152] After manufacturing the mask (20) and the frame (60), an attachment process is performed to attach the frame (60) to the mask (20). Specifically, as shown in FIG. 21, a cushioning material (75) is placed in a perimeter shape along the edge of the third opening (61) on the fifth surface (601) of the frame (60). A through hole (75H) is formed in the cushioning material (75) that faces the screw hole (60H). Next, the incident surface (201) of the cushioning material (75) and the mask (20) are positioned facing each other, and the mask (20) is placed on the cushioning material (75). At this time, the position of the mask (20) relative to the frame (60) is determined using the screw hole (60H) of the frame (60) and / or the through hole (75H) of the cushioning material (75) and the screw hole (20H) of the mask (20). After that, a screw (70) is inserted through the screw hole (20H), the through hole (75H), and the screw hole (60H) from the side of the mask (20), and the mask (20) is fastened to the frame (60) as shown in FIG. 5a. Through these processes, a mask device (15) is manufactured.

[0153] Next, an example of a method for manufacturing an organic device (100) using a mask device (15) will be described.

[0154] First, a substrate (110) on which a first electrode (120) is formed is prepared. The substrate (110) may be a silicon wafer. The first electrode (120) may be formed, for example, by forming a conductive layer constituting the first electrode (120) on the substrate (110) by a vacuum deposition method, and then patterning the conductive layer by a photolithography method. The patterning of the conductive layer may be performed using a device that performs a semiconductor manufacturing process. An insulating layer (160) located between two adjacent first electrodes (120) may be formed on the substrate (110).

[0155] Next, an organic layer (130) including a first organic layer (130A), a second organic layer (130B), etc. is formed on the first electrode (120). For example, first, a mask device (15) including a first mask (20) is installed in a deposition device (10), and a first organic layer (130A) is formed by a deposition method using the first mask (20). The first mask (20) has a second opening (41) corresponding to the first organic layer (130A). Next, a mask device (15) including a second mask (20) is installed in a deposition device (10), and a second organic layer (130B) is formed by a deposition method using the second mask (20). The second mask (20) has a second opening (41) corresponding to the second organic layer (130B). Next, a mask device (15) including a third mask (20) is installed in a deposition device (10), and a third organic layer is formed by a deposition method using the third mask (20). The third mask (20) has a second opening (41) corresponding to the third organic layer. When installing the mask device (15) in the deposition device (10) and when removing it from the deposition device (10), the frame (60) is held. Thus, the risk of the first layer (30) being damaged or the second layer (40) being deformed is suppressed. In addition, within the deposition device (10), the frame (60) is supported by a mask holder (9). Thus, the risk of the mask holder (9) interfering with the first opening (31) of the first layer (30) or the second opening (41) of the second layer (40) is suppressed. In other words, the risk of the deposition material being obstructed to the substrate (110) by the mask holder (9) is suppressed.

[0156] Next, a second electrode (140) is formed on the organic layer (130). For example, as shown in FIG. 1, the second electrode (140) may be formed over the entire first surface (111) by a vacuum deposition method, etc. Alternatively, although not shown, the second electrode (140) may be formed by a deposition method using a mask (20), similar to the organic layer (130). After that, a sealing layer, etc., not shown may be formed on the second electrode (140). In this way, an organic device (100) can be obtained.

[0157] Multiple organic devices (100) may be formed on a single substrate (110). One organic device (100) may correspond to a first opening (31) of the mask (20). In this case, a process of cutting the substrate (110) may be performed. For example, the substrate (110) is cut along an area of ​​the substrate (110) corresponding to an inner area (36) of the mask (20). As a result, multiple organic devices (100) can be obtained.

[0158] The effect of the mask (20) is explained in the case where an organic layer (130), a second electrode (140), etc. are formed by a deposition method using the mask (20).

[0159] The mask (20) comprises a first layer (30) containing silicon or a silicon compound. Therefore, when the substrate (110) contains silicon, the difference between the thermal expansion occurring in the substrate (110) and the thermal expansion occurring in the mask (20) can be suppressed. Accordingly, the precision of the position, shape, etc. of the deposited layer, such as the organic layer (130) and the second electrode (140), can be suppressed due to the thermal expansion of the mask (20). Thus, an organic device (100) having a high device density can be provided.

[0160] The mask (20) has a second layer (40) including a plurality of second openings (41). By providing the second layer (40) separately from the first layer (30), the thickness of the second layer (40) can be reduced, thereby suppressing the occurrence of shadows during the deposition process. Additionally, by appropriately securing the gap (S6) between the first wall surface (32) and the second openings (41) when viewed from a planar view, the thickness of the first layer (30) can be appropriately secured while suppressing shadows.

[0161] The above-described embodiment can be modified in various ways. Below, variations are described with reference to the drawings as necessary. In the following description and the drawings used in the description, parts that can be configured in the same manner as the above-described embodiment are given the same reference numerals as those used for corresponding parts in the above-described embodiment. Redundant descriptions are omitted. Furthermore, if it is evident that the functional effects obtained in the above-described embodiment are also obtained in the variations, such description may be omitted.

[0162] For example, the mask (20) does not have to include an intermediate layer (50) between the first layer (30) and the second layer (40). In this case, the second surface (302) of the first layer (30) and the third surface (401) of the second layer (40) may be directly connected.

[0163] Additionally, as shown in FIG. 22, the cushioning material (75) may be placed between the tip of the leg portion (72) of the screw (70) and the frame (60). In this case, the risk of the frame (60) being damaged by the stress applied to the frame (60) from the screw (70) is suppressed.

[0164] Additionally, as illustrated in FIG. 23, a stepped portion (65) may be provided in the inner circumference of the frame (60). The stepped portion (65) is recessed in the direction from the fifth surface (601) toward the sixth surface (602). The stepped portion (65) is formed by a surface (651) that widens from the inner edge (604) of the frame (60) toward the outer edge (603), and a surface (652) that connects the surface (651) and the fifth surface (601). The surface (651) constitutes a part of the fifth surface (601). The surface (652) connects the surface (651) with the remaining part of the fifth surface (601). The surface (652) constitutes a part of the inner surface of the frame (60). In this case, at least a portion of the mask (20) may be accommodated in the space defined by the stepped portion (65), more specifically by the surface (651) and the surface (652). In this case, the outer edge of the mask (20) is surrounded by the frame (60). As a result, the risk of damage to the outer region (25) of the mask (20) (especially the outer region (35) of the first layer (30)) is more effectively suppressed.

[0165] When at least a portion of the mask (20) is received in the stepped portion (65) of the frame (60), the exit surface (202) of the mask (20) is preferably a surface at the same height as the fifth surface (601) of the frame (60) or protrudes from the fifth surface (601). In this case, when forming a deposition layer through the mask (20) on the substrate (110) or a component on the substrate (110), the exit surface (202) of the mask (20) can be brought into contact with the substrate (110) or a component on the substrate (110).

[0166] FIG. 24 is a drawing illustrating an example of a device (200) equipped with an organic device (100). The device (200) includes a substrate (110) and an organic layer (130). The organic layer (130) is a layer formed by a deposition method using a mask (20). The device (200) is, for example, a smartphone. The device (200) may be a tablet terminal, a wearable terminal, etc. A wearable terminal is a smart glass, a head-mounted display, etc.

[0167] The mask device (15) according to the embodiment described above includes a mask (20) and a frame (60) connected to the mask (20). The mask (20) includes a first layer (30) and a second layer (40). The first layer (30) includes a first surface (301), a second surface (302) located opposite the first surface (301), at least one first opening (31) penetrating from the first surface (301) to the second surface (302), an outer edge (303), and an outer region (35) located between the outer edge (303) and the first opening (31) when viewed in a plane. The second layer (40) includes a third surface (401) facing the second surface (302), a fourth surface (402) located on the opposite side of the third surface (401), and a plurality of second openings (41) that penetrate from the third surface (401) to the fourth surface (402) and overlap the first opening (31) when viewed in a plane. The frame (60) faces the first surface (301) of the outer region (35) of the first layer (30). When viewed in a plane, at least a portion of the frame (60) extends to the outer edge (303) of the first layer (30). The mask (20) is fixed to the frame (60) by a screw (70). In this case, when handling the mask (20), the frame (60) can be grasped, so the risk of damage to the mask (20) is suppressed. As a result, handling of the mask (20) becomes easier. In addition, it is easy to fix the mask (20) to the frame (60), and the mask device (15) can be easily manufactured.

[0168] It is also possible to appropriately combine the plurality of components disclosed in the above embodiments and variations as needed. Alternatively, some components may be deleted from the entire set of components appearing in the above embodiments and variations.

Claims

Claim 1 A mask device comprising a mask and a frame connected to the mask, wherein the mask comprises a first layer including a first surface, a second surface located opposite to the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening when viewed in a plane, a third surface facing the second surface, a fourth surface located opposite to the third surface, and a second layer including a plurality of second openings penetrating from the third surface to the fourth surface and overlapping with the first opening when viewed in a plane, wherein the frame faces the first surface of the outer region of the first layer, and when viewed in a plane, at least a portion of the frame extends to the outer edge of the first layer, and the mask is fixed to the frame by a screw. Claim 2 A mask device according to claim 1, wherein the first layer comprises silicon or a silicon compound, and the frame comprises glass or metal. Claim 3 A mask device according to claim 1, comprising a cushioning material between the mask and the frame. Claim 4 A mask device according to claim 1, wherein the mask and the frame are arranged in this order from the head portion of the screw toward the leg portion, and a cushioning material is provided between the tip of the leg portion of the screw and the frame. Claim 5 A mask device according to claim 1, wherein the mask and the frame are arranged in this order from the head portion of the screw toward the leg portion, and the top surface of the head portion of the screw is a surface at the same height as the fourth surface of the second layer, or is located between the fourth surface and the first surface of the first layer. Claim 6 A mask device according to claim 1, wherein the mask is fixed to the frame by two or more screws. Claim 7 In claim 1, the mask device is fixed to the frame by one or more pairs of screws, each of which is positioned with the plurality of second openings between them when viewed in a planar view. Claim 8 A mask device according to claim 1, wherein a stepped portion accommodating at least a portion of the mask is formed in the frame. Claim 9 In claim 1, the mask is a mask device that is detachably fixed to the frame. Claim 10 In claim 1, the mask device, wherein the screw is composed of the same material as the frame. Claim 11 A method for manufacturing an organic device comprising a process of forming an organic layer on a substrate by a deposition method using a mask device described in any one of claims 1 to 10.

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