Method of processing substrate, method of manufacturing semiconductor device, program, and substrate processing apparatus

Abstract

A technology capable of suppressing the attachment of foreign substances (particles) to a substrate is provided. (a) a process of supplying a processing gas obtained by phase change of a liquid or solid object to a substrate in a processing chamber through a path interposed by a first section, and (b) (b1) a process of storing a purge gas in a second section, and (b2) a process of supplying the purge gas stored in the second section to the first section while exhausting the gas in the first section through a path not passing through the processing chamber, the process of performing (a) after (a).

Description

Technology Field

[0001] The present disclosure relates to a substrate processing method, a method for manufacturing a semiconductor device, a program, and a substrate processing device. Background Technology

[0002] As a process of manufacturing a semiconductor device or a substrate processing process, a cycle including a process of supplying gas stored in a gas reservoir to a substrate is performed to form a film on the surface of the substrate (see, for example, Patent Document 1). Prior art literature

[0003] Japanese Patent Publication No. 2005-285922 The problem to be solved

[0004] The present disclosure provides a technology capable of suppressing the attachment of foreign matter (particles) to a substrate. means of solving the problem

[0005] According to one aspect of the present disclosure,

[0006] (a) a process of supplying a processing gas obtained by phase change of a liquid or solid object to a substrate in a processing chamber through a path interposed by a first section, and

[0007] (b) (b1) A process for storing purge gas in the second section, and

[0008] (b2) A process of supplying the purge gas stored in the second section to the first section, while exhausting the gas within the first section by a path that does not pass through the processing room.

[0009] A process performed after (a)

[0010] A technology having is provided. Effects of the invention

[0011] According to the present disclosure, the attachment of foreign matter (particles) to a substrate can be suppressed. Brief explanation of the drawing

[0012] FIG. 1 is a schematic diagram of a vertical processing furnace of a substrate processing apparatus suitably used in one embodiment of the present disclosure, and is a drawing showing the processing furnace portion in a longitudinal cross-sectional view. FIG. 2 is a schematic diagram of a controller of a substrate processing device suitably used in one embodiment of the present disclosure, and is a block diagram illustrating the control system of the controller. FIG. 3 is a flowchart for explaining processing in a substrate processing apparatus in one embodiment of the present disclosure. Figure 4 is a diagram illustrating an example of a tank purging process. Figure 5 is a diagram illustrating a modified example of a tank purging process. Figure 6 is a diagram illustrating a modified example of a tank purging process. FIG. 7 is a drawing illustrating a modified example of a substrate processing apparatus suitably used in one embodiment of the present disclosure. Specific details for implementing the invention

[0013] <One aspect of the present disclosure>

[0014] Hereinafter, one aspect of the present disclosure will be described with reference primarily to FIGS. 1 to 7. Furthermore, all drawings used in the following description are schematic, and the dimensional relationships of each element and the ratios of each element shown in the drawings do not necessarily correspond to reality. Also, the dimensional relationships of each element and the ratios of each element do not necessarily correspond to one another among multiple drawings.

[0015] (1) Configuration of the substrate processing device

[0016] As shown in FIG. 1, the processing furnace (202) has a heater (207) as a heating system (temperature control unit). Inside the heater (207), a reaction tube (203) is arranged concentrically with the heater (207). The reaction tube (203) is made of a heat-resistant material, such as quartz, and is formed in a cylindrical shape with the top closed and the bottom open. Below the reaction tube (203), a manifold (209) is arranged concentrically with the reaction tube (203). An O-ring (220a) is provided as a sealing member between the manifold (209) and the reaction tube (203). The processing vessel (reaction vessel) is mainly formed by the reaction tube (203) and the manifold (209). A processing chamber (201), which is a processing space, is formed in the hollow portion of the processing vessel. The processing room (201) is configured to accommodate a wafer (200) as a substrate. The wafer (200) is placed inside the processing room (201), and processing is performed on the wafer (200).

[0017] In the processing chamber (201), nozzles (249a, 249b) are provided to penetrate the side wall of the manifold (209). Gas supply pipes (pipes) (232a, 232b) are each connected to the nozzles (249a, 249b).

[0018] Nozzles (249a, 249b) are each provided in an annular space, viewed from a plane between the inner wall of the reaction tube (203) and the wafer (200), so as to rise upward along the inner wall of the reaction tube (203) from the bottom to the top, toward the loading direction of the wafer (200). On the side of the nozzles (249a, 249b), gas supply holes (250a, 250b), which are supply ports for supplying gas, are each provided. Multiple gas supply holes (250a, 250b) are provided extending from the bottom to the top of the reaction tube (203).

[0019] Below the manifold (209), a seal cap (219) is provided as a cover body capable of hermetically sealing the lower opening of the manifold (209). On the upper surface of the seal cap (219), an O-ring (220b) is provided as a sealing member that contacts the lower end of the manifold (209). Below the seal cap (219), a rotation mechanism (267) for rotating the boat (217), which will be described later, is installed. The rotation axis (255) of the rotation mechanism (267) passes through the seal cap (219) and is connected to the boat (217). The rotation mechanism (267) is configured to rotate the wafer (200) by rotating the boat (217). The seal cap (219) is configured to be raised and lowered in a vertical direction by a boat elevator (115) which is a lifting mechanism installed outside the reaction tube (203). The boat elevator (115) is configured to enable the boat (217) to be brought into and taken out of the processing room (201) by raising and lowering the seal cap (219). The boat elevator (115) is configured as a conveying device (conveying mechanism) for conveying the boat (217), i.e., the wafer (200), into and out of the processing room (201).

[0020] The boat (217) serving as a substrate support is configured to support multiple wafers (200), for example, 25 to 200 wafers, in a horizontal position and also aligned vertically with their centers aligned with each other, in a multi-stage arrangement, that is, arranged at intervals. The boat (217) is made of a heat-resistant material, for example, quartz. At the bottom of the boat (217), an insulating plate (218), made of a heat-resistant material, for example, quartz, is supported in a multi-stage manner. Furthermore, in the present specification, a numerical range notation such as "25 to 200 wafers" implies that the lower limit and the upper limit are included within that range. Therefore, for example, "25 to 200 wafers" means "25 wafers or more and 200 wafers or less." The same applies to other numerical ranges.

[0021] A temperature sensor (263) serving as a temperature detector is installed inside the reaction tube (203). By adjusting the energization state of the heater (207) based on the temperature information detected by the temperature sensor (263), the temperature inside the processing room (201) becomes a desired temperature distribution.

[0022] Next, the details of the gas supply system and exhaust system will be explained.

[0023] In the gas supply pipe (232a), a first supply source (301), a valve (303) which is an opening / closing valve, a mass flow controller (MFC) (241a) which is a flow controller (flow control unit), a valve (304), a tank (300) which is a storage unit for storing gas inside, a pressure sensor (302) which is a pressure gauge for measuring pressure, and a valve (243a) are provided in order from the upstream direction. The storage unit is configured as a gas tank with a larger gas capacity than a conventional pipe, or as a spiral pipe, etc. The pressure sensor (302) is configured to detect the pressure inside the gas supply pipe (232a) between the tank (300) and the valve (243a). The pressure sensor (302) is provided with a valve (305) that blocks and opens the flow of gas inside the pressure sensor (302).

[0024] The first supply source (301) is a gas source for supplying the first processing gas. The first processing gas is a gas that is at risk of undergoing a phase change into a liquid or solid state due to a drop in temperature until it is supplied into the processing room (201). For example, the first processing gas is a gas obtained by changing the phase of a liquid or solid object at room temperature and pressure. The first processing gas is, for example, a raw material gas and is one of the processing gases. Additionally, as the first supply source (301), a vaporizer or the like may be used, or an inlet port for the first processing gas supplied from outside the substrate processing device may be used.

[0025] A gas supply pipe (232c) is connected between the valve (303) of the gas supply pipe (232a) and the MFC (241a). Additionally, a gas supply pipe (232d) is connected between the valve (304) of the gas supply pipe (232a) and the tank (300). In the gas supply pipes (232c, 232d), a second supply source (306), a third supply source (307), an MFC (241c, 241d), and valves (243c, 243d) are respectively provided in order from the upstream direction.

[0026] The second source (306) and the third source (307) are each gas sources for supplying inert gas. The second source (306) and the third source (307) may be used in common. The inert gas supplied from the second source (306) and the third source (307) acts as a purging gas to purge the gas remaining in the reaction tube (203) or as a carrier gas for the first processing gas in the substrate processing process described later. In addition, in the tank purging process described later, it acts as a purging gas to remove gas and particles present in the gas supply tube (232a), MFC (241a), tank (300), pressure sensor (302), etc.

[0027] A gas exhaust pipe (308) is connected between the tank (300) and the valve (243a) of the gas supply pipe (232a). A valve (309) is provided in the gas exhaust pipe (308). The downstream end of the gas exhaust pipe (308) is connected to the exhaust pipe (231) described later. The gas exhaust pipe (308) is configured to allow the gas inside the gas supply pipe (232a) to be discharged out of the processing chamber (201) by a path that does not pass through the processing chamber (201) by opening and closing the valve (309).

[0028] A first processing gas supply system (also referred to as a raw material gas supply system) is formed mainly by a gas supply pipe (232a), a valve (303), an MFC (241a), a valve (304), a tank (300), a pressure sensor (302), and a valve (243a). A first supply source (301) may be included in the first processing gas supply system. Additionally, a first inert gas supply system is formed mainly by a gas supply pipe (232c), an MFC (241c), and a valve (243c). A second supply source (306) may be included in the first inert gas supply system. Additionally, a second inert gas supply system is formed mainly by a gas supply pipe (232d), an MFC (241d), and a valve (243d). A third supply source (307) may be included in the second inert gas supply system. Additionally, the first inert gas supply system and the second inert gas supply system may be referred to as the inert gas supply system. Additionally, the inert gas supply system may be included in the first treatment gas supply system. Additionally, the first treatment gas exhaust system is mainly composed of a gas exhaust pipe (308) and a valve (309). The first treatment gas exhaust system may be included in the first treatment gas supply system.

[0029] In the gas supply pipe (232b), a fourth supply source (310), an MFC (241b), and a valve (243b) are provided in order from the upstream direction.

[0030] The fourth supply source (310) is a gas source for supplying the second treatment gas. The second treatment gas is a reaction gas or reforming gas that reacts with the first treatment gas, and is one of the treatment gases.

[0031] A gas supply pipe (232e) is connected to the downstream side of the valve (243b) of the gas supply pipe (232b). In the gas supply pipe (232e), a fifth supply source (311), an MFC (241e), and a valve (243e) are provided in order from the upstream direction.

[0032] The fifth source (311) is a gas source for supplying inert gas. The inert gas supplied from the fifth source (311) acts as a purging gas or a carrier gas for the second processing gas to purge the gas remaining in the reaction tube (203) in the substrate processing process described later.

[0033] A second treatment gas supply system (also called a reaction gas supply system or a reforming gas supply system) is formed mainly by a gas supply pipe (232b), an MFC (241b), and a valve (243b). A fourth supply source (310) may be included in the second treatment gas supply system. Additionally, a third inert gas supply system is formed mainly by a gas supply pipe (232e), an MFC (241e), and a valve (243e). A fifth supply source (311) may be included in the third inert gas supply system. The third inert gas supply system may be included in the second treatment gas supply system.

[0034] In the reaction tube (203), an exhaust pipe (231) is provided to exhaust the atmosphere inside the processing room (201). A vacuum pump (246) as a vacuum exhaust device is connected to the exhaust pipe (231) via a pressure sensor (245) acting as a pressure detector (pressure detection unit) for detecting the pressure inside the processing room (201) and an APC (Auto Pressure Controller) valve (244) acting as a pressure regulator (pressure adjustment unit). The APC valve (244) can perform vacuum exhaust and vacuum exhaust stoppage inside the processing room (201) by opening and closing the valve while the vacuum pump (246) is in operation. Additionally, the system is configured to adjust the pressure inside the processing room (201) by adjusting the valve opening degree based on pressure information detected by the pressure sensor (245) while the vacuum pump (246) is in operation. The exhaust system is mainly composed of the exhaust pipe (231), the APC valve (244), and the pressure sensor (245). A vacuum pump (246) may be included in the exhaust system.

[0035] The above-described gas exhaust pipe (308) is connected between the APC valve (244) and the vacuum pump (246) of the exhaust pipe (231). The gas exhaust pipe (308) can perform vacuum exhaust and vacuum exhaust stoppage within the gas supply pipe (232a) by opening and closing the valve (309) while the APC valve (244) is closed and the vacuum pump (246) is operated. Additionally, it is configured so that the pressure within the gas supply pipe (232a) can be adjusted by adjusting the valve opening degree of the valve (309) based on pressure information detected by the pressure sensor (302) while the vacuum pump (246) is operated.

[0036] In the following description, the section between the valve (304) of the gas supply pipe (232a) and the valve (243a) is referred to as the first section (A). Additionally, the section between the valve (303) of the gas supply pipe (232a) and the valve (304) is referred to as the second section (B). Additionally, the section between the third supply source (307) of the gas supply pipe (232d) and the valve (243d) is referred to as the third section (C). The upstream side of the first section (A) is connected to the second section (B), and the downstream side is connected to the processing room (201) and the exhaust pipe (231). Furthermore, the third section (C) is connected to the upstream side of the tank (300) of the first section (A). Additionally, the first supply source (301) and the second supply source (306) are connected to the second section (B). Additionally, a tank (300) and a pressure sensor (302) are provided in the first section (A), and an MFC (241a) is provided in the second section (B).

[0037] In other words, the valve (304) is provided between the first section (A) and the second section (B) of the gas supply pipe (232a). Additionally, the valve (243a) is provided between the first section (A) of the gas supply pipe (232a) and the processing room (201). Additionally, the valve (303) is provided between the first supply source (301) of the gas supply pipe (232a) and the first section (A). Additionally, the valve (309) is provided between the first section (A) of the gas exhaust pipe (308) and the exhaust pipe (231). Additionally, the valve (243c) is provided between the second supply source (306) of the gas supply pipe (232c) and the second section (B).

[0038] The purge gas supplied from the second supply source (306) can be used for both the purge in the second section (B), which includes the area around the MFC (241a), and the purge in the first section (A), which includes the tank (300). Additionally, the valve (304) can be used for both the purge in the first section (A) and the purge in the second section (B). Therefore, the supply system can be simplified. Furthermore, the purge gas supplied from the third supply source (307) can be used for the purge in the first section (A), which includes the tank (300).

[0039] As shown in FIG. 2, the controller (121), which is a control unit (control means), is configured as a computer equipped with a CPU (Central Processing Unit) (121a), RAM (Random Access Memory) (121b), a memory device (121c), and an I / O port (121d). The RAM (121b), the memory device (121c), and the I / O port (121d) are configured to be able to exchange data with the CPU (121a) via an internal bus (121e). An input / output device (122), configured as, for example, a touch panel, is connected to the controller (121).

[0040] The memory device (121c) is composed of, for example, flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. Within the memory device (121c), a control program that controls the operation of the substrate processing device, and a process recipe containing the steps and conditions of the film deposition process described later, are recorded and stored in a readable manner. The process recipe is a combination that allows the controller (121) to execute each sequence of the film deposition process described later to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe and the control program, etc. are collectively referred to simply as a program (program product). Also, the process recipe is simply referred to as a recipe. In this specification, when the term "program" is used, it may include only the recipe, only the control program, or both. The RAM (121b) is configured as a memory area (work area) where programs or data read by the CPU (121a) are temporarily held and supported.

[0041] The I / O port (121d) is connected to the above-described MFC (241a to 241e), valves (243a to 243e, 303 to 305, 309), pressure sensors (245, 302), APC valve (244), vacuum pump (246), heater (207), temperature sensor (263), rotating mechanism (267), boat elevator (115), etc.

[0042] The CPU (121a) is configured to read and execute a control program from the memory device (121c), and also to read a recipe from the memory device (121c) in accordance with the input of an operation command from the input / output device (122). The CPU (121a) is configured to control the flow rate adjustment operation of various gases by the MFC (241a to 241e), the opening and closing operation of the valve (243a to 243e, 303 to 305, 309), the opening and closing operation of the APC valve (244) and the pressure adjustment operation by the APC valve (244) based on the pressure sensor (245, 302), the starting and stopping of the vacuum pump (246), the temperature adjustment operation of the heater (207) based on the temperature sensor (263), the rotation and rotation speed adjustment operation of the boat (217) by the rotation mechanism (267), and the lifting operation of the boat (217) by the boat elevator (115), in accordance with the contents of the read recipe.

[0043] The controller (121) can be configured by installing the aforementioned program, which is recorded and stored in an external storage device (e.g., a magnetic disk such as a hard disk, an optical disk such as a CD, a semiconductor memory such as a USB memory) (123), onto a computer. The storage device (121c) and the external storage device (123) are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. In this specification, when the term "recording media" is used, it may include only the storage device (121c), only the external storage device (123), or both. Furthermore, the provision of the program to the computer may be performed using communication means such as the internet or a dedicated line, without using the external storage device (123).

[0044] (2) Processing process

[0045] Next, a processing process for performing processing on the substrate processing device described above as a process of the semiconductor manufacturing process will be explained using FIG. 3. In the following description, the operation of each part constituting the substrate processing device is controlled by a controller (121).

[0046] The term "wafer" as used in this specification may refer to the wafer itself or to a laminate of the wafer and a predetermined layer or film formed on its surface. The term "surface of the wafer" as used in this specification may refer to the surface of the wafer itself or to the surface of a predetermined layer, etc. formed on the wafer. When the phrase "form a predetermined layer on the wafer" is described in this specification, it may mean forming a predetermined layer directly on the surface of the wafer itself or forming a predetermined layer on a layer, etc. formed on the wafer. When the term "substrate" is used in this specification, it is synonymous with the use of the term "wafer."

[0047] (Substrate input process, S11)

[0048] When multiple wafers (200) are loaded into the boat (217), as shown in FIG. 1, the boat (217) supporting the multiple wafers (200) is lifted by the boat elevator (115) and brought into the processing room (201).

[0049] (Temperature and pressure adjustment process, S12)

[0050] In the processing room (201), that is, the space where the wafer (200) exists, vacuum exhaust (reduction of pressure exhaust) is performed by a vacuum pump (246) so that the pressure (vacuum degree) inside the processing room (201) is reached. At this time, the pressure inside the processing room (201) is measured by a pressure sensor (245), and the APC valve (244) is feedback controlled based on this measured pressure information. The vacuum pump (246) is kept in a constantly operating state at least until the processing of the wafer (200) is completed. In addition, the wafer (200) inside the processing room (201) is heated by a heater (207) so that it reaches a desired temperature. At this time, the energization state of the heater (207) is feedback controlled based on the temperature information detected by the temperature sensor (263) so that the temperature distribution inside the processing room (201) is reached. The heating inside the processing room (201) by the heater (207) is performed continuously at least until the processing of the wafer (200) is completed. Additionally, rotation of the boat (217) and wafer (200) by the rotation mechanism (267) is initiated. The rotation of the boat (217) and wafer (200) by the rotation mechanism (267) is continued at least until the processing of the wafer (200) is completed.

[0051] (Substrate processing process, S13)

[0052] After that, a cycle including the following steps S1 to S4 is performed a predetermined number of times.

[0053] [1st Treatment Gas Supply, Step S1]

[0054] First, a first processing gas is supplied to a wafer (200) in a processing room (201). Specifically, by closing valves (243a, 309) in advance and opening valves (303, 304), the first processing gas, whose flow rate is adjusted by an MFC (241a), is stored in a tank (300) provided in the first section (A). In other words, the first processing gas is pressurized within the tank (300). Then, by closing valve (304) and opening valve (243a), the first processing gas stored in the tank (300) is supplied in large quantities at once to the wafer (200) in the processing room (201) through a nozzle (249a) and exhausted from the exhaust pipe (231). Additionally, to prevent the first processing gas from entering the nozzle (249b), the valve (243e) is opened to allow inert gas to flow into the gas supply pipe (232e). The inert gas is supplied into the processing chamber (201) via the gas supply pipe (232e) and the nozzle (249b), and is exhausted from the exhaust pipe (231). In this step, the first processing gas, obtained by phase change of a liquid or solid object, is supplied to the wafer (200) in the processing chamber (201) via a path that passes through the first section (A) and the second section (B) upstream of the first section (A). At least partially simultaneously with Step S1, the pressure in the first section (A) is measured using a pressure sensor (302) while the valve (305) is open.

[0055] As the first treatment gas, a gas containing a predetermined element, such as tungsten (W), titanium (Ti), molybdenum (Mo), tantalum (Ta), cobalt (Co), yttrium (Y), ruthenium (Ru), hafnium (Hf), zirconium (Zr), aluminum (Al), and silicon (Si), may be used. As the first treatment gas, one or more of these may be used. As the first treatment gas, a gas in which these gases are activated by plasma or the like may be used.

[0056] As a gas containing a specified element, for example, a halogen-based gas containing a specified element and a halogen element may be used. As halogen-based gases containing specific elements, examples include hexachlorotungsten (WCl6), hexafluorotungsten (WF6), titanium tetrachloride (TiCl4), titanium tetrafluoride (TiF4), molybdenum pentachloride (MoCl5), molybdenum pentafluoride (MoF5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum tetrachloride (MoOCl4), tantalum pentachloride (TaCl5), tantalum pentafluoride (TaF5), cobalt difluoride (CoF2), cobalt dichloride (CoCl2), yttrium trifluoride (YF3), yttrium trichloride (YCl3), ruthenium trichloride (RuCl3), ruthenium trifluoride (RuF3), hafnium tetrachloride (HfCl4), hafnium tetrafluoride (HfF4), zirconium tetrachloride (ZrCl4), zirconium tetrafluoride (ZrF4), Aluminum trichloride (AlCl3), aluminum trifluoride (AlF3), dichlorosilane (SiH2Cl2), 1,2-dichlorodisilane (Si2H4Cl2), 1,1,1-trichlorodisilane (S i2 Gases containing 1,1,2-trichlorodisilane (Si2H3Cl3), pentachlorodisilane (Si2HCl5), hexachlorodisilane (Si2Cl6), tetrafluorosilane (SiF4), etc., may be used. In addition, as gases containing a specific element, for example, monosilane (SiH4), disilane (Si2H6), trisilane (Si3H8), tetrasilane (Si4H 10 Gases containing ) etc. may be used. As a gas containing a specified element, one or more of these may be used.

[0057] In addition, as a gas containing a specific element, for example, an organic gas containing a specific element having a specific element and an organic ligand can be used. As organic gases containing a specified element, for example, hexadimethylaminoditungsten (W2[N(CH3)2]6), bistrocherybutylimidobisdimethylamidotungsten ((t-C4H9NH)2W=(Nt-C4H9)2), tetrakisethylmethylaminotitanium (Ti[N(C2H5)(CH3)]4), bisethylcyclopentadienylruthenium (Ru(EtCp)2), biscyclopentadienylruthenium (Ru(Cp)2), tetrakisethylmethylaminohafnium (Hf[N(MeEt)]4), tetrakisdiethylaminohafnium (Hf[N(Et)2]4), tetrakisdimethylaminohafnium (Hf[N(Me)2]4), Gases containing trisdimethylaminocyclopentadienylhafnium ((Cp)Hf[N(Me)2]3), tetrakisethylmethylaminozirconium (Zr[N(Me)Cp]4), tetrakisdiethylaminozirconium (Zr[N(Et)2]4), tetrakisdimethylaminozirconium (Zr[N(Me)2]4), trisdimethylaminocyclopentadienylzirconium ((Cp)Zr[N(Me)2]3), trimethylaluminum (Al(CH3)3), trisdimethylaminosilane (Si[N(CH3)2]3H), etc., may be used. As a gas containing a specified element, one or more of these may be used.

[0058] As an inert gas, for example, nitrogen (N2) gas or noble gases such as argon (Ar), helium (He), neon (Ne), and xenon (Xe) can be used. As an inert gas, one or more of these can be used.

[0059] [Fuzzy, Step S2]

[0060] After a first layer containing a predetermined element is formed on at least a portion of the wafer (200), the valve (243a) is closed to stop the supply of the first processing gas. At this time, the APC valve (244) is fully opened to vacuum exhaust the inside of the processing chamber (201) by means of a vacuum pump (246), and any unreacted first processing gas remaining in the processing chamber (201) or reaction products generated by the reaction between the first processing gas and the surface of the wafer (200) are removed from the processing chamber (201). At this time, the valves (243c to 243e) are kept open to maintain the supply of inert gas into the processing chamber (201). The inert gas acts as a purge gas.

[0061] [2nd Treatment Gas Supply, Step S3]

[0062] Next, a second processing gas is supplied to the wafer (200) in the processing chamber (201) to react with the first layer, which is the surface (which may be referred to as the outermost surface) of the wafer (200). Specifically, the valve (243b) is opened to flow the second processing gas into the gas supply pipe (232b). The second processing gas is flow-regulated by the MFC (241b), supplied into the processing chamber (201) via the nozzle (249b), and exhausted from the exhaust pipe (231). At the same time, the valve (243e) is opened to flow an inert gas into the gas supply pipe (232e). The inert gas is flow-regulated by the MFC (241e), supplied into the processing chamber (201) together with the second processing gas, and exhausted from the exhaust pipe (231). Additionally, to prevent the second treatment gas from entering the nozzle (249a), the valve (243a) is opened to allow inert gas to flow into the gas supply pipe (232a). The inert gas is supplied into the treatment chamber (201) via the gas supply pipe (232c) and / or the gas supply pipe (232d) and the nozzle (249a), and is exhausted from the exhaust pipe (231).

[0063] By supplying a second processing gas to the wafer (200) under the above-described conditions, at least a portion of the first layer formed on the wafer (200) is modified.

[0064] As the second treatment gas, a gas including, for example, a reducing gas, an oxidizing gas, a nitride gas, a sulfide gas, a selenide gas, a telluride gas, etc., may be used. As the second treatment gas, one or more of these may be used. As the second treatment gas, a gas in which these gases are activated by plasma, etc. may be used. For example, if the first treatment gas is a gas containing a specific element and the second treatment gas is a reducing gas, a film composed of a specific element can be formed on the wafer (200). In addition, for example, if the first treatment gas is a gas containing a specific element and the second treatment gas is any one of an oxidizing gas, a nitride gas, a sulfide gas, a selenide gas, or a telluride gas, an oxide film of a specific element, a nitride film of a specific element, a sulfide film of a specific element, a selenide film of a specific element, and a telluride film of a specific element can be formed on the wafer (200).

[0065] As a reducing gas, one or more gases including, for example, hydrogen (H2) gas, deuterium (D2) gas, boran (BH3) gas, diborane (B2H6) gas, carbon monoxide (CO) gas, ammonia (NH3) gas, monosilane (SiH4) gas, disilane (Si2H6) gas, trisilane (Si3H8) gas, monogerman (GeH4) gas, and digerman (Ge2H6) may be used. As an oxidizing gas, one or more gases including, for example, oxygen (O2), ozone (O3), water vapor (H2O), a mixture of H2 and O2, hydrogen peroxide (H2O2), and nitrous oxide (N2O) may be used. As a nitriding gas, one or more hydrogen nitride-based gases such as ammonia (NH3) gas, diazene (N2H2) gas, hydrazine (N2H4) gas, and N3H8 gas may be used. As a sulfide gas, gases including, for example, sulfan (H2S), disulfan (H2S2), diammonium sulfide ((NH4)2S), and dimethyl sulfide ((CH3)2S) may be used. As a sulfide gas, one or more of these may be used. As a selenide gas, gases including, for example, ceran (H2Se), diseran (H2Se2), and dimethyl selenium ((CH3)2Se) may be used. As a selenide gas, one or more of these may be used. As a telluride gas, gases including, for example, teran (H2Te), diteran (H2Te2), and dimethylteran ((CH3)2Te) can be used. As a telluride gas, one or more of these can be used.

[0066] [Fuzzy, Step S4]

[0067] After at least a portion of the first layer on the wafer (200) has been modified into the second layer, the valve (243b) is closed to stop the supply of the second processing gas. At this time, the APC valve (244) is fully opened to vacuum exhaust the inside of the processing chamber (201) by the vacuum pump (246), and any unreacted second processing gas remaining in the processing chamber (201) or any reaction products generated by the reaction between the second processing gas and the surface of the wafer (200) (i.e., the surface of the first layer) are removed from the processing chamber (201). At this time, the valves (243c to 243e) are kept open to maintain the supply of inert gas into the processing chamber (201). The inert gas acts as a purge gas.

[0068] (Perform a prescribed number of times)

[0069] A cycle including the steps S1 to S4 described above is performed a predetermined number of times (n times, where n is an integer of 1 or 2 or more). By doing so, a film containing a predetermined element with a predetermined thickness is formed on a wafer (200).

[0070] (Atmospheric pressure return process, S14)

[0071] Inert gas is supplied into the treatment room (201) from each of the gas supply pipes (232c to 232e) and exhausted from the exhaust pipe (231). By doing so, the treatment room (201) is purged, and then the atmosphere inside the treatment room (201) is replaced with inert gas, and the pressure inside the treatment room (201) is returned to normal pressure.

[0072] (Substrate removal process, S15)

[0073] The seal cap (219) is lowered by the boat elevator (115), and the bottom of the manifold (209) is opened. Then, the finished wafer (200), supported by the boat (217), is removed from the bottom of the manifold (209) to the outside of the reaction tube (203) and outside the processing room (201). The finished wafer (200) is removed from the boat (217).

[0074] (Perform a predetermined number of times, S16)

[0075] A cycle including the steps S11 to S15 described above is performed a predetermined number of times (m times, where m is an integer of 1 or 2 or more).

[0076] Here, when processing a wafer (200) using a gas obtained by phase changing a liquid or solid object, such as the first processing gas described above, if the substrate processing process is performed multiple times, the first processing gas may phase change into a liquid or solidified object and become particles within the first section (A) and the second section (B) of the gas supply pipe (232a). In particular, since gas tends to remain inside the tank (300), processing gas or particles tend to remain, and liquid or solidified objects tend to become particles and remain.

[0077] The greater the hourly volume of purge gas passing through the first section (A), the more efficiently gas or particles within the first section (A) can be removed. However, if a large amount of purge gas is supplied to increase the pressure within the first section (A) when a large amount of gas or particles are present within the first section (A), such as immediately after the first treatment gas is supplied, particles caused by gas aggregation are more likely to be generated. Consequently, it may be difficult to shorten the time required for particle removal.

[0078] In one embodiment of the present disclosure, after performing a cycle including steps S11 to S15 described above a predetermined number of times, the following tank purging process S17 is performed.

[0079] (Tank purging process, S17)

[0080] Next, an example of a tank purging process will be explained using Fig. 4.

[0081] [Section 1 Vacuum Exhaust Process, S171]

[0082] First, the valve (304, 243a, 243d) and the APC valve (244) are closed, and the valve (309) is opened while the vacuum pump (246) is operated. Then, the first section (A) of the gas supply pipe (232a) is vacuum-evacuated through a path that does not pass through the processing room (201), via the gas exhaust pipe (308) and the exhaust pipe (231). In this step, the first section (A) is vacuum-evacuated before the step S173 described later, and the pressure difference with the second section (B) at the start of step S173 is made large. By doing so, a large flow rate of purge gas can be supplied into the first section (A) in a short time during step S173 and discharged through a path that does not pass through the processing room (201). Accordingly, the first processing gas or particles in the first section (A) become easier to remove.

[0083] As for the processing conditions of Step S171,

[0084] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds

[0085] is exemplified.

[0086] [Section 2 Purge Gas Storage Process, S172]

[0087] With the valves (303, 304) closed, the valve (243c) is opened for a predetermined time to store purge gas in the second section (B) of the gas supply pipe (232a). The purge gas, whose flow rate is adjusted by the MFC (241c), is stored in the second section (B). At this time, the second section (B) becomes high pressure. It is preferable to perform step S172 at least partially simultaneously with the above-described step S171. By doing so, the time required for the purge process can be shortened. Additionally, step S172 may be performed after step S171.

[0088] As for the processing conditions of Step S172,

[0089] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds

[0090] Flow rate of purge gas supplied within the second section (B): 0.1 to 2.0 slm, preferably 0.5 to 1.5 slm

[0091] This is an example.

[0092] [Section 1 Exhaust Process, S173]

[0093] Next, the valves (304, 309) are opened to supply the purge gas stored in the second section (B) to the first section (A), and the gas and particles within the first section (A) are exhausted through a path that does not pass through the processing room (201) via the gas exhaust pipe (308) and the exhaust pipe (231). At this time, the large amount of purge gas supplied to the first section (A) passes through the first section (A) in a short time. Because of this, the time during which the pressure inside the tank (300) is high is extremely short. Therefore, it becomes easier to efficiently remove gas or particles within the first section (A), which includes the interior of the tank (300), and also suppress the generation of particles caused by gas aggregation.

[0094] As for the processing conditions of Step S173,

[0095] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds

[0096] is exemplified.

[0097] [Perform a prescribed number of times, S174]

[0098] A cycle including the steps S171 to S173 described above is performed a predetermined number of times (P1 times, where P1 is an integer of 1 or 2 or more). By doing so, gas or particles remaining in the second section (B) or around the MFC (241a) can be removed together. Additionally, in this step, by exhausting the gas and particles in the first section (A) through a path that does not pass through the processing chamber (201), the movement of particles into the processing chamber (201) can be suppressed. For example, P1 is 1 to 1000, and preferably 10 to 800.

[0099] In the steps S171 to S174 described above, the valve (305) is opened to open the gas flow between the pressure sensor (302) and the first section (A). At this time, since the time during which the pressure inside the tank (300) is high is extremely short, even if the gas flow between the pressure sensor (302) and the first section (A) is opened, it is difficult for the pressure sensor (302) to be damaged. Therefore, in the steps S171 to S174 described above, it is preferable to open the valve (305) to simultaneously remove the gas or particles inside the pressure sensor (302).

[0100] [Section 1 Purge Gas Storage Process, S175]

[0101] Next, purge gas is stored in the first section (A) through the second section (B). Specifically, valves (243a, 303, 305, 309) are closed and valve (304) is opened, valve (243c) is opened for a predetermined time, and purge gas is stored in the first section (A) through the second section (B). The purge gas, whose flow rate is adjusted by the MFC (241c), is stored in the first section (A) through the second section (B). At this time, the first section (A) becomes high pressure.

[0102] As for the processing conditions of Step S175,

[0103] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds

[0104] Flow rate of purge gas supplied within the first section (A): 0.1 to 2.0 slm, preferably 0.5 to 1.5 slm

[0105] This is an example.

[0106] [Section 1 Exhaust Process, S176]

[0107] Next, the valve (309) is opened, and the purge gas stored in the first section (A) is exhausted through the gas exhaust pipe (308) and the exhaust pipe (231) via a path that does not pass through the processing room (201). That is, the gas and particles in the first section (A) are exhausted.

[0108] As for the processing conditions of Step S176,

[0109] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds

[0110] is exemplified.

[0111] [Perform a prescribed number of times, S177]

[0112] A cycle including the steps S175 and S176 described above is performed a predetermined number of times (P2 times, where P2 is an integer of 1 or more than 2). By doing so, gas or particles remaining in the second section (B), around the valve (303) or MFC (241a), etc. can be removed. For example, P2 is 1 to 1000, and preferably 10 to 800.

[0113] [Section 1 Purge Gas Storage Process, S178]

[0114] Next, purge gas is stored in the first section (A) through the third section (C). Specifically, with the valves (243a, 304, 305, 309) closed, the valve (243d) is opened for a predetermined time to store purge gas in the first section (A) through the third section (C). The purge gas, whose flow rate is adjusted by the MFC (241d), is stored in the first section (A) through the third section (C). At this time, the first section (A) becomes high pressure.

[0115] As for the processing conditions of Step S178,

[0116] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds

[0117] Flow rate of purge gas supplied within the first section (A): 0.1 to 2.0 slm, preferably 0.5 to 1.5 slm

[0118] This is an example.

[0119] [Section 1 Exhaust Process, S179]

[0120] Next, the valve (309) is opened, and the purge gas stored in the first section (A) is exhausted through the gas exhaust pipe (308) and the exhaust pipe (231) via a path that does not pass through the processing room (201). That is, the gas and particles in the first section (A) are exhausted.

[0121] As for the processing conditions of Step S179,

[0122] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds

[0123] is exemplified.

[0124] [Perform a predetermined number of times, S180]

[0125] A cycle including the steps S178 and S179 described above is performed a predetermined number of times (P3 times, where P3 is an integer of 1 or 2 or more). For example, P3 is 1 to 1000, preferably 10 to 800.

[0126] Here, there are cases where gas or particles that could not be completely removed from the second section (B) in steps S171 to S174 described above move into the first section (A) in step S175. After performing steps S171 to S174, steps S175 to S180 are performed, and the first section (A) is made high pressure, and then the first section (A) is exhausted, thereby making it easier to remove the gas or particles that have moved from the second section (B) to the first section (A). Additionally, by exhausting the gas and particles within the first section (A) through a path that does not pass through the processing room (201), the movement of particles into the processing room (201) can be suppressed.

[0127] Preferably, steps S171 to S173 are performed multiple times, and then steps S175 to S180 are performed. By performing steps S175 to S180 when the gas or particles in the first section (A) have been removed to some extent, the gas or particles in the first section (A) can be efficiently removed while suppressing the generation of particles caused by gas aggregation in the first section (A). Additionally, only one of steps S171 to S173 and steps S175 to S180 may be performed. In this case as well, some of the effects described above can be obtained.

[0128] [Section 1 Purge Gas Storage Process, S181]

[0129] Next, purge gas is stored in the first section (A). Specifically, with valves (304, 305, 309, 243a) closed, valve (243d) is opened for a predetermined time, and purge gas is stored in the first section (A) through the third section (C). The purge gas, whose flow rate is adjusted by the MFC (241d), is stored in the first section (A) through the third section (C). At this time, the first section (A) becomes high pressure.

[0130] As for the processing conditions of Step S181,

[0131] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds

[0132] Flow rate of purge gas supplied within the first section (A): 0.1 to 2.0 slm, preferably 0.5 to 1.5 slm

[0133] This is an example.

[0134] [Section 1 Exhaust Process, S182]

[0135] Next, the valve (243a) is opened to exhaust the purge gas stored in the first section (A) through a path passing through the processing room (201). By storing the purge gas in the first section (A) and then exhausting it after making the first section (A) high pressure, it becomes easier to remove gas or particles in the first section (A).

[0136] As for the processing conditions of Step S182,

[0137] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds

[0138] is exemplified.

[0139] [Perform a set number of times, S183]

[0140] A cycle including the aforementioned steps S181 and S182 is performed a predetermined number of times (P4 times, where P4 is an integer of 1 or 2 or more). By doing so, gas or particles remaining inside the gas supply pipe (232a) downstream of the valve (243a) or around the valve (243a) can be removed. Additionally, by performing steps S181 and S182 while the gas or particles in the first section (A) have been removed to some extent by steps S171 to S180, it becomes difficult for the gas or particles in the first section (A) to be brought into the processing chamber (201). For example, P4 is 1 to 1000, and preferably 10 to 800.

[0141] [Section 1 · Pressure Sensor Purge Gas Supply and Exhaust Process, S184]

[0142] Next, with valve (304) and valve (243a) closed, 243d, 305, and 309 are opened, and while supplying purge gas into the first section (A) and the pressure sensor (302), the gas within the first section (A) and the pressure sensor (302) is exhausted through the gas exhaust pipe (308) and the exhaust pipe (231) via a path that does not pass through the processing room (201). The purge gas, whose flow rate is adjusted by the MFC (241d), removes gas or particles within the first section (A) and the pressure sensor (302).

[0143] As for the processing conditions of Step S184,

[0144] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds

[0145] Flow rate of purge gas supplied within the first section (A): 0.1 to 2.0 slm, preferably 0.5 to 1.5 slm

[0146] This is an example.

[0147] [Section 1 · Pressure Sensor Vacuum Exhaust Process, S185]

[0148] Next, the first section (A) and the pressure sensor (302) are vacuum-exhausted. Specifically, the valve (304, 243a, 243d) and the APC valve (244) are closed, and the valve (309) is opened while the vacuum pump (246) is operated, and the first section (A) of the gas supply pipe (232a) is vacuum-exhausted through the gas exhaust pipe (308) and the exhaust pipe (231) via a path that does not pass through the processing room (201).

[0149] As for the processing conditions of Step S185,

[0150] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds

[0151] is exemplified.

[0152] [Perform a set number of times, S186]

[0153] A cycle including the steps S184 and S185 described above is performed a predetermined number of times (P5 times, where P5 is an integer of 1 or 2 or more). By exhausting gas and particles within the first section (A) and within the pressure sensor (302) through a path that does not pass through the processing room (201), the movement of particles into the processing room (201) can be suppressed. For example, P5 is 1 to 1000, and preferably 10 to 800.

[0154] By repeating a cycle including steps S184 and S185, it becomes easier to remove gas and particles within the first section (A) and the pressure sensor (302). Additionally, only one of steps S184 and S185 may be performed. In this case, at least some of the effects described above can be obtained. For example, if only step S184 is performed, step S184 may be performed for 1 to 30,000 seconds, preferably 50 to 20,000 seconds. The same applies if only step S185 is performed.

[0155] Here, the longer the period during which the inside of the pressure sensor (302) is under high pressure, the more susceptible the pressure sensor (302) becomes to damage. Therefore, it is desirable to close the valve (305) in at least the steps S175 to S183 described above to block the flow of gas between the pressure sensor (302) and the first section (A) in order to suppress damage to the pressure sensor (302). Then, in the steps S184 to S186 described above, the valve (305) is opened to supply purge gas into the first section (A) and the pressure sensor (302), and the gas or particles within the first section (A) and the pressure sensor (302) are exhausted through a path that does not pass through the processing room (201) via the gas exhaust pipe (308) and the exhaust pipe (231). By doing so, the gas or particles inside the pressure sensor (302) can be efficiently removed.

[0156] In addition, the time taken to perform the above-described steps S175 to S180 (hereinafter referred to as process c) is made longer than the time taken to perform steps S171 to S174 (hereinafter referred to as process b), steps S181 to S183 (hereinafter referred to as process d), and steps S184 to S186 (hereinafter referred to as process f). The particle reduction effect per hour is greatest in process c, followed by processes b, d, and f. Therefore, it is desirable to make the time taken to perform process c longer than the time taken to perform processes b, d, and f. In addition, it is desirable to make the time taken to perform process b longer than the time taken to perform processes d and f. In addition, it is desirable to make the time taken to perform process f longer than the time taken to perform process d. Furthermore, when process c is performed nc times and the time taken for one process c is represented as tc, the time taken to perform process c can be expressed as tc × nc. The same applies to other processes.

[0157] <Other Aspects of the Present Disclosure>

[0158] The foregoing has specifically described one aspect of the present disclosure. However, the present disclosure is not limited to the above-described aspect, and various modifications are possible within the scope of not departing from the gist thereof.

[0159] (Variation Example 1)

[0160] FIG. 5 shows the flow of Variant Example 1 of the tank purging process of the present disclosure.

[0161] In this modified example, in the tank purging process S17 described above, after performing process b of steps S171 to S174 described above, process d of steps S181 to S183 described above is performed. That is, processes c and f described above are not performed. In this modified example as well, particles can be efficiently removed while suppressing the generation of particles caused by the aggregation of the treatment gas, and at least some of the same effects as in the above embodiment are obtained.

[0162] (Variation Example 2)

[0163] FIG. 6 shows the flow of Variant Example 2 of the tank purging process of the present disclosure.

[0164] In this modified example, in the tank purging process S17 described above, after performing process b of steps S171 to S174 described above, process f of steps S184 to S186 described above is performed. That is, processes c and d described above are not performed. In this modified example as well, particles can be efficiently removed while suppressing the generation of particles caused by the aggregation of the treatment gas, and at least some of the same effects as in the above embodiment are obtained.

[0165] (Variation Example 3)

[0166] FIG. 7 shows a modified example of a substrate processing apparatus to which the tank purging process S17 of the present disclosure is applied. In addition, in the substrate processing apparatus of the present modification, elements substantially identical to those described in FIG. 1 are given the same reference numerals, and their descriptions are omitted.

[0167] In this modified example, as shown in FIG. 7, a filter (400) for removing liquefied or solidified gas is provided between the junction with the gas supply pipe (232d) and the pressure sensor (302) of the first section (A). Then, in the first processing gas supply of step S1 of the above-described substrate processing process (S13), the first processing gas obtained by phase change of a liquid or solid object is supplied to a wafer (200) in the processing room (201) through the filter (400) via a path interposed between the first section (A) and the second section (B) upstream of the first section (A).

[0168] In this modified example as well, by performing the tank purging process (S17) of the above-described embodiment or modified example, the first section (A) including the filter (400) is purged, thereby suppressing the generation of particles caused by gas aggregation, and efficiently removing particles from inside the filter (400). The same effect as in the above-described embodiment or modified example is obtained.

[0169] In addition, in the embodiments and variations described above, the case in which a first inert gas supply system and a second inert gas supply system are provided as an inert gas supply system in the gas supply pipe (232a) has been described, but the present disclosure is not limited thereto. The second inert gas supply system may be used as the first inert gas supply system. That is, the third section (C) described above may be used as the second section (B) without providing the second section (B) composed of the gas supply pipe (232c), MFC (241c), and valve (243c). Instead of the second supply source (306), gas supply pipe (232c), MFC (241c), and valve (243c), a third supply source (307), gas supply pipe (232d), MFC (241d), and valve (243d) may be used. In this variation, the same effect as in the embodiments and variations described above is obtained.

[0170] Furthermore, although the above-described embodiments and variations were described using the case where a tank (300) or a filter (400) is provided in the first section (A), the present disclosure is not limited thereto. The above-described embodiments or variations can be similarly applied to a substrate processing apparatus in which a tank (300) or a filter (400) is not provided in the first section (A). In the present variation as well, by purging the first section (A), particles can be efficiently removed while suppressing the generation of particles caused by gas aggregation, and the same effect as in the above-described embodiments or variations is obtained.

[0171] Furthermore, in the embodiments and variations described above, the case in which the first treatment gas supply system is purged in the tank purging process (S17) was explained. However, the invention is not limited thereto, and the invention can be similarly applied when the second treatment gas supply system is purged. In addition, the invention can be similarly applied when purging a gas supply system other than the first or second treatment gas exemplified.

[0172] In the embodiments and variations described above, examples were explained in which an inert gas (i.e., a gas treated as not exhibiting reactivity, such as N2 or noble gas) is used as the purge gas. However, the purge gas may be a gas that exhibits chemical action, for example, a gas that oxidizes or reduces the surface of the wafer (200) or the components or gases within the processing room (201). Furthermore, since inert gases are often less expensive than gases that exhibit chemical action, the cost of processing can be reduced by using an inert gas as the purge gas.

[0173] In the embodiments and variations described above, examples of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at once were described. The present disclosure is not limited to the embodiments and variations described above, and can be suitably applied to cases where a film is formed using a single-wafer type substrate processing apparatus that processes one or several substrates at once, for example. Furthermore, in the embodiments and variations described above, examples of forming a film using a substrate processing apparatus having a hot-wall type processing furnace were described. The present disclosure is not limited to the embodiments and variations described above, and can be suitably applied to cases where a film is formed using a substrate processing apparatus having a cold-wall type processing furnace.

[0174] Even when using these substrate processing devices, each process can be performed with the same processing procedure and processing conditions as the embodiments or variations described above, and the same effects as the embodiments or variations described above are obtained.

[0175] The aforementioned embodiments or variations may be used in appropriate combination. The processing procedure and processing conditions in this case may be similar to, for example, the processing procedure and processing conditions of the aforementioned embodiments or variations. Explanation of the symbols

[0176] 200: Wafer (substrate) 201: Processing Room

Claims

Claim 1 (a) a process of supplying a processing gas obtained by phase change of a liquid or solid object to a substrate in a processing chamber through a path interposed with a first section, and (b) (b1) a process of storing a purge gas in a second section, and (b2) a process of supplying the purge gas stored in the second section to the first section while exhausting the first section through a path not passing through the processing chamber, the process of (a) being performed after the process of (b1). Claim 2 A substrate processing method according to claim 1, wherein in (b), (b0) before (b2), a process of vacuum exhausting within the first section is also performed. Claim 3 A substrate processing method according to claim 1, further comprising: (c) a process of storing the purge gas in the first section, and (c2) a process of exhausting the first section through a path that does not pass through the processing room, after (b). Claim 4 A substrate processing method according to paragraph 3, wherein (c) is performed after (b) is performed multiple times. Claim 5 A substrate processing method according to claim 3, further comprising: (a') a process of removing the substrate from the processing chamber after (a); (d) (d1) a process of storing the purge gas in the first section; and (d2) a process of exhausting the first section through a path interposed with the processing chamber after (c) and (a'). Claim 6 In claim 5, (e) a process of measuring the pressure within the first section using a pressure gauge at least partially simultaneously with (a), and (f) a process of exhausting the first section and the pressure gauge while supplying the purge gas within the first section and the pressure gauge after (d), and (c) and (d) a method for processing a substrate, wherein gas flow between the pressure gauge and the first section is blocked. Claim 7 In paragraph 6, (b) a substrate processing method that opens the gas flow between the pressure gauge and the first section. Claim 8 A substrate processing method according to claim 6, wherein the time for performing (c) is longer than the time for performing (b), (d), and (f). Claim 9 In claim 6, (f) a substrate processing method that exhausts the first section and the pressure gauge by a path that does not pass through the processing room. Claim 10 A substrate processing method according to claim 6, wherein (f) (f1) a process of exhausting the first section and the pressure gauge while supplying purge gas to the first section and the pressure gauge, and (f2) a process of vacuum exhausting the first section and the pressure gauge. Claim 11 A substrate processing method according to claim 1, further comprising: (a') a process of removing the substrate from the processing chamber after (a); (d) (d1) a process of storing the purge gas in the first section; and (d2) a process of exhausting the first section through a path interposed with the processing chamber after (b) and (a'). Claim 12 A substrate processing method according to claim 1, comprising: (e) a process of measuring the pressure within the first section using a pressure gauge at least partially simultaneously with (a); and (f) a process of purging the first section and the pressure gauge after (b). Claim 13 A substrate processing method according to any one of claims 1 to 12, wherein (a) (a1) a process of storing the processing gas in a reservoir provided in the first section, and (a2) a process of supplying the processing gas in the reservoir to the substrate. Claim 14 A substrate processing method according to any one of claims 1 to 12, wherein (a) the processing gas is supplied to the substrate through a filter provided in the first section. Claim 15 A substrate processing method according to any one of claims 3 to 10, wherein the first source supplying the processing gas, the second source supplying the purge gas, and the first section are connected to the second section. Claim 16 A substrate processing method according to claim 15, wherein a flow control unit for controlling the flow rate of the processing gas is provided within the second section. Claim 17 In claim 15, (c1) comprises a process of storing the purge gas in the first section interposed with the second section, (c11) and a process of storing the purge gas in the first section interposed with a third section different from the second section, and (c) comprises a substrate processing method in which (c12) and (c2) are performed a predetermined number of times after (c11) and (c2) have been performed a predetermined number of times. Claim 18 (a) a process of supplying a processing gas obtained by phase change of a liquid or solid object to a substrate in a processing chamber through a path interposed with a first section, and (b) (b1) a process of storing a purge gas in a second section, and (b2) a process of supplying the purge gas stored in the second section to the first section while exhausting the first section through a path not passing through the processing chamber, the process of (a) being performed after the process of (b1). Claim 19 (a) a step of supplying a processing gas obtained by phase change of a liquid or solid object to a substrate in a processing chamber through a path interposed with a first section, (b) (b1) a step of storing a purge gas in a second section, and (b2) a step of supplying the purge gas stored in the second section to the first section while exhausting the first section through a path not passing through the processing chamber, the steps of which are executed by a computer on a substrate processing device. Claim 20 A processing chamber in which a substrate is disposed therein; a first section connected to the processing chamber and an exhaust system; a first source supplying a processing gas obtained by phase change of a liquid or solid object to the first section; a second section connected to a second source supplying a purge gas; a plurality of valves provided between the second section and the first section, between the first section and the processing chamber, between the first source and the first section, between the first section and the exhaust system, and between the second source and the second section; and a plurality of valves provided between the second section and the first section, between the first section and the exhaust system, and between the second source and the second section, and a process of supplying the processing gas to the substrate through a path interposed by the first section, and (b) (b1) a process of storing the purge gas in the second section, and (b2) a process of exhausting the first section through a path not passing through the processing chamber while supplying the purge gas stored in the second section to the first section, wherein the plurality of valves are controllable so as to perform the process of (a) A substrate processing device having a control unit configured thereto.

Images